CN117890651A - Series magnetic current sensor capable of eliminating influence of external interference magnetic field - Google Patents
Series magnetic current sensor capable of eliminating influence of external interference magnetic field Download PDFInfo
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Abstract
本发明属于电流传感器技术领域，特别涉及一种能够消除外界干扰磁场影响的串联型磁性电流传感器，包括第一、二组磁电阻单元，第一磁电阻单元与第二磁电阻单元接至供电引脚，第三磁电阻单元与第四磁电阻单元连接接地引脚；第一磁电阻单元与第七磁电阻单元串联，第四磁电阻单元与第六磁电阻单元串联，在第七磁电阻单元与第六磁电阻单元之间引出信号输出引脚Vout2；第二磁电阻单元与第八磁电阻单元串联，第三磁电阻单元与第五磁电阻单元串联，在第八磁电阻单元与第五磁电阻单元之间引出信号输出引脚Vout1。本发明通过改变惠斯通电桥结构使得Vmid不受外界干扰磁场分量Hx的干扰；增加磁场发生装置产生方向相反的偏置磁场，减小外界干扰磁场分量Hy导致的灵敏度变化。
The present invention belongs to the technical field of current sensors, and particularly relates to a series magnetic current sensor capable of eliminating the influence of external interference magnetic fields, comprising a first and a second group of magnetic resistance units, wherein the first magnetic resistance unit and the second magnetic resistance unit are connected to a power supply pin, and the third magnetic resistance unit and the fourth magnetic resistance unit are connected to a ground pin; the first magnetic resistance unit and the seventh magnetic resistance unit are connected in series, the fourth magnetic resistance unit and the sixth magnetic resistance unit are connected in series, and a signal output pin Vout2 is led out between the seventh magnetic resistance unit and the sixth magnetic resistance unit; the second magnetic resistance unit and the eighth magnetic resistance unit are connected in series, the third magnetic resistance unit and the fifth magnetic resistance unit are connected in series, and a signal output pin Vout1 is led out between the eighth magnetic resistance unit and the fifth magnetic resistance unit. The present invention changes the Wheatstone bridge structure so that V mid is not interfered by the external interference magnetic field component H x ; adds a magnetic field generating device to generate a bias magnetic field in the opposite direction, and reduces the sensitivity change caused by the external interference magnetic field component Hy .
Description
技术领域Technical Field
本发明属于电流传感器技术领域，特别涉及一种能够消除外界干扰磁场影响的串联型磁性电流传感器。The invention belongs to the technical field of current sensors, and in particular relates to a series magnetic current sensor capable of eliminating the influence of external interfering magnetic fields.
背景技术Background technique
磁传感器是将磁铁或者电流等产生的磁场转换成电压信号的传感器。现代工业和电子产品中应用中，磁传感器最广泛的是被用来测量电流、位置、方向等物理参数。在现有技术中，有许多不同类型的磁传感器，最常见的是采用霍尔(Hall)元件、各向异性磁电阻(Anisotropic Magneto-Resistance,AMR)、巨磁电阻(Giant Magneto-Resistance,GMR)、隧道磁阻传感器(Tunnel Magneto-Resistance,TMR)为核心的传感器。A magnetic sensor is a sensor that converts the magnetic field generated by a magnet or current into a voltage signal. In modern industrial and electronic applications, magnetic sensors are most widely used to measure physical parameters such as current, position, and direction. In the prior art, there are many different types of magnetic sensors, the most common of which are sensors using Hall elements, anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), and tunnel magnetoresistance sensors (TMR) as their core.
以各向异性磁电阻为核心的传感器称为AMR磁阻传感器。磁性金属在遇到外加磁场时，其电阻值会随着外加磁场的变化而发生变化(如图1所示)。基于这种特性，AMR磁阻传感器的基本结构由四个磁阻组成了惠斯通电桥(如图2和图3所示)，其中磁阻R1和R2位于芯片左侧，磁阻R3和R4位于芯片右侧。当需要检测被检测电流产生的磁场时，磁阻R1的磁化方向如果朝与电流相反的方向转动的时候，阻值则减少，磁阻R2的磁化方向如果朝着电流方向转动，阻值则增加，根据分压公式可得到Vout1电压信号，同理可得到Vout2电压信号，通过测试Vout1和Vout2输出电压差信号，可以得到被检测磁场值，从而达到测量电流的目的。The sensor with anisotropic magnetoresistance as the core is called AMR magnetoresistance sensor. When a magnetic metal encounters an external magnetic field, its resistance value will change with the change of the external magnetic field (as shown in Figure 1). Based on this characteristic, the basic structure of the AMR magnetoresistance sensor consists of four magnetoresistances forming a Wheatstone bridge (as shown in Figures 2 and 3), where magnetoresistances R1 and R2 are located on the left side of the chip, and magnetoresistances R3 and R4 are located on the right side of the chip. When it is necessary to detect the magnetic field generated by the detected current, if the magnetization direction of magnetoresistance R1 rotates in the opposite direction of the current, the resistance value decreases, and if the magnetization direction of magnetoresistance R2 rotates in the direction of the current, the resistance value increases. According to the voltage divider formula, the Vout1 voltage signal can be obtained, and the Vout2 voltage signal can be obtained in the same way. By testing the output voltage difference signal of Vout1 and Vout2, the detected magnetic field value can be obtained, thereby achieving the purpose of measuring current.
专利申请号201811600055.0，名称为集成电流传感器的中国专利，记载了一种新型的电流传感器结构，该传感器基本原理是：如图4所示，施加在左右侧第一组磁电阻单元和第二组磁电阻单元上的被检测磁场方向不同，传感器产生信号输出，实现检测电流目的。但是在其表现出优越性能时也存在以下缺陷：1、在定电流驱动，存在外界干扰磁场时，外界干扰磁场分量Hx会导致Vmid(当被检测磁场为0时，信号输出值)、Vout1以及Vout2发生变化，进而使电流传感器检测精度下降。2、外界干扰磁场分量Hy会导致灵敏度变化很大，恶化检测精度，但是我们期望外界干扰磁场分量Hy不会影响传感器的灵敏度。3、第一磁铁和第二磁铁体积大，且在芯片的外部，工艺流程较为复杂，制作成本高、周期长。Patent application number 201811600055.0, a Chinese patent named integrated current sensor, records a new type of current sensor structure. The basic principle of the sensor is: as shown in Figure 4, the directions of the detected magnetic fields applied to the first group of magnetoresistive units and the second group of magnetoresistive units on the left and right sides are different, and the sensor generates a signal output to achieve the purpose of detecting current. However, while it shows superior performance, it also has the following defects: 1. When the external interference magnetic field exists in the constant current drive, the external interference magnetic field component Hx will cause Vmid (signal output value when the detected magnetic field is 0), Vout1 and Vout2 to change, thereby reducing the detection accuracy of the current sensor. 2. The external interference magnetic field component Hy will cause a large change in sensitivity and deteriorate the detection accuracy, but we expect that the external interference magnetic field component Hy will not affect the sensitivity of the sensor. 3. The first magnet and the second magnet are large in size and are outside the chip. The process flow is relatively complicated, the production cost is high, and the cycle is long.
发明内容Summary of the invention
本发明的目的在于解决现有技术的问题，提出一种能够消除外界干扰磁场影响的串联型磁性电流传感器，通过改变惠斯通电桥的结构使得Vmid不受外界干扰磁场分量Hx的干扰；通过增加磁场发生装置产生方向相反的偏置磁场，能够减小外界干扰磁场分量Hy导致的灵敏度变化。The purpose of the present invention is to solve the problems of the prior art and propose a series magnetic current sensor that can eliminate the influence of external interference magnetic field. By changing the structure of the Wheatstone bridge, V mid is not interfered by the external interference magnetic field component H x ; by adding a magnetic field generating device to generate a bias magnetic field in the opposite direction, the sensitivity change caused by the external interference magnetic field component Hy can be reduced.
为了实现上述目的，本发明采用以下的技术方案：In order to achieve the above object, the present invention adopts the following technical solutions:
一种能够消除外界干扰磁场影响的串联型磁性电流传感器，包括导体、隔离器件和磁电阻传感器件，所述隔离器件位于磁电阻传感器件和导体之间；所述磁电阻传感器件包括左侧第一组磁电阻单元和右侧第二组磁电阻单元，组成惠斯通电桥，流经导体的电流在第一、第二组磁电阻单元感测到大小相等方向相反的被检测磁场；所述第一组磁电阻单元包括从左至右的第一磁电阻单元、第二磁电阻单元、第三磁电阻单元和第四磁电阻单元，所述第二组磁电阻单元包括从左至右的第五磁电阻单元、第六磁电阻单元、第七磁电阻单元和第八磁电阻单元，所述第一磁电阻单元与第二磁电阻单元接至供电引脚，所述第三磁电阻单元与第四磁电阻单元连接接地引脚；所述第一磁电阻单元与第七磁电阻单元串联，所述第四磁电阻单元与第六磁电阻单元串联，在第七磁电阻单元与第六磁电阻单元之间引出信号输出引脚Vout2；所述第二磁电阻单元与第八磁电阻单元串联，所述第三磁电阻单元与第五磁电阻单元串联，在第八磁电阻单元与第五磁电阻单元之间引出信号输出引脚Vout1。A series magnetic current sensor capable of eliminating the influence of external interference magnetic fields comprises a conductor, an isolation device and a magnetoresistive sensor device, wherein the isolation device is located between the magnetoresistive sensor device and the conductor; the magnetoresistive sensor device comprises a first group of magnetoresistive units on the left and a second group of magnetoresistive units on the right, forming a Wheatstone bridge, and the current flowing through the conductor senses a detected magnetic field of equal magnitude and opposite direction in the first and second groups of magnetoresistive units; the first group of magnetoresistive units comprises a first magnetoresistive unit, a second magnetoresistive unit, a third magnetoresistive unit and a fourth magnetoresistive unit from left to right, and the second group of magnetoresistive units comprises a fifth magnetoresistive unit from left to right , a sixth magnetic resistance unit, a seventh magnetic resistance unit and an eighth magnetic resistance unit, the first magnetic resistance unit and the second magnetic resistance unit are connected to the power supply pin, the third magnetic resistance unit and the fourth magnetic resistance unit are connected to the ground pin; the first magnetic resistance unit and the seventh magnetic resistance unit are connected in series, the fourth magnetic resistance unit and the sixth magnetic resistance unit are connected in series, and a signal output pin Vout2 is led out between the seventh magnetic resistance unit and the sixth magnetic resistance unit; the second magnetic resistance unit and the eighth magnetic resistance unit are connected in series, the third magnetic resistance unit and the fifth magnetic resistance unit are connected in series, and a signal output pin Vout1 is led out between the eighth magnetic resistance unit and the fifth magnetic resistance unit.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，每个磁电阻单元包括磁电阻条和设置于磁电阻条上的并与磁电阻条成预定角度的相互平行的若干个短路条。According to the series magnetic current sensor capable of eliminating the influence of external interference magnetic field of the present invention, further, each magnetoresistive unit includes a magnetoresistive strip and a plurality of short-circuit strips arranged on the magnetoresistive strip and parallel to each other at a predetermined angle with the magnetoresistive strip.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，所述第一组磁电阻单元和第二组磁电阻单元的短路条方向沿着磁电阻传感器件长轴中轴线对称。According to the series magnetic current sensor capable of eliminating the influence of external interference magnetic field of the present invention, further, the short-circuit bars of the first group of magnetoresistive units and the second group of magnetoresistive units are symmetrical along the central axis of the long axis of the magnetoresistive sensor device.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，所述第一磁电阻单元、第六磁电阻单元、第八磁电阻单元和第三磁电阻单元的短路条倾斜方向和角度相一致；所述第七磁电阻单元、第四磁电阻单元、第二磁电阻单元和第五磁电阻单元的短路条倾斜方向和角度相一致。According to the series magnetic current sensor capable of eliminating the influence of external interfering magnetic fields of the present invention, further, the short-circuit bars of the first magnetoresistance unit, the sixth magnetoresistance unit, the eighth magnetoresistance unit and the third magnetoresistance unit have the same inclination direction and angle; the short-circuit bars of the seventh magnetoresistance unit, the fourth magnetoresistance unit, the second magnetoresistance unit and the fifth magnetoresistance unit have the same inclination direction and angle.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，所述第一磁电阻单元和第七磁电阻单元、第二磁电阻单元和第八磁电阻单元、第六磁电阻单元和第四磁电阻单元以及第三磁电阻单元和第五磁电阻单元的电阻值受被检测磁场影响一起变大或变小。According to the series magnetic current sensor of the present invention, which can eliminate the influence of external interfering magnetic fields, further, the resistance values of the first magnetoresistance unit and the seventh magnetoresistance unit, the second magnetoresistance unit and the eighth magnetoresistance unit, the sixth magnetoresistance unit and the fourth magnetoresistance unit, and the third magnetoresistance unit and the fifth magnetoresistance unit increase or decrease together under the influence of the detected magnetic field.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，当存在平行于磁电阻条宽度方向的外界干扰磁场分量Hx时，所述第一磁电阻单元和第七磁电阻单元、第二磁电阻单元和第八磁电阻单元、第六磁电阻单元和第四磁电阻单元以及第三磁电阻单元和第五磁电阻单元的电阻值变化趋势相反。According to the series magnetic current sensor capable of eliminating the influence of external interference magnetic field of the present invention, further, when there is an external interference magnetic field component Hx parallel to the width direction of the magnetic resistance strip, the resistance value change trends of the first magnetic resistance unit and the seventh magnetic resistance unit, the second magnetic resistance unit and the eighth magnetic resistance unit, the sixth magnetic resistance unit and the fourth magnetic resistance unit, and the third magnetic resistance unit and the fifth magnetic resistance unit are opposite.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，还包括设置于所述磁电阻传感器件下面的磁场发生装置，所述磁场发生装置采用二极磁铁或者四极磁铁，为第一组磁电阻单元和第二组磁电阻单元产生磁场方向相反的偏置磁场。According to the present invention, the series magnetic current sensor capable of eliminating the influence of external interfering magnetic fields further includes a magnetic field generating device arranged under the magnetoresistive sensor device, and the magnetic field generating device uses a dipole magnet or a quadrupole magnet to generate a bias magnetic field with opposite magnetic field directions for the first group of magnetoresistive units and the second group of magnetoresistive units.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，所述磁电阻传感器件的内部设置线圈，在左侧第一组磁电阻单元与右侧第二组磁电阻单元中线圈电流方向相反，导致线圈电流产生的偏置磁场方向相反。According to the series magnetic current sensor of the present invention, which can eliminate the influence of external interference magnetic field, further, a coil is arranged inside the magnetoresistive sensor device, and the directions of the coil currents in the first group of magnetoresistive units on the left and the second group of magnetoresistive units on the right are opposite, resulting in opposite directions of the bias magnetic fields generated by the coil currents.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，所述磁电阻条的下面增加反铁磁层，对第一组磁电阻单元和第二组磁电阻单元施加交换偏置磁场，且交换偏置磁场方向相反。According to the series magnetic current sensor of the present invention, which can eliminate the influence of external interference magnetic field, further, an antiferromagnetic layer is added under the magnetoresistive strip, and an exchange bias magnetic field is applied to the first group of magnetoresistive units and the second group of magnetoresistive units, and the exchange bias magnetic fields are in opposite directions.
根据本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，进一步地，所述第一组磁电阻单元和第二组磁电阻单元在物理空间中不相互交叉。According to the series magnetic current sensor capable of eliminating the influence of external interfering magnetic fields of the present invention, further, the first group of magnetoresistive units and the second group of magnetoresistive units do not cross each other in physical space.
与现有技术相比，本发明具有以下优点：Compared with the prior art, the present invention has the following advantages:
1、本发明能够消除外界干扰磁场影响的串联型磁性电流传感器，当采用定电流驱动、存在外界干扰磁场分量Hx时，如果中点电位Vmid、Vout1以及Vout2发生改变会导致传感器检测精度下降，本发明通过改变惠斯通电桥的结构使得Vmid不受外界干扰磁场分量Hx的干扰，提升传感器检测准确性、可靠性。1. The present invention is a series magnetic current sensor capable of eliminating the influence of external interference magnetic fields. When a constant current drive is adopted and there is an external interference magnetic field component Hx , if the midpoint potential V mid , Vout1 and Vout2 change, the sensor detection accuracy will decrease. The present invention improves the sensor detection accuracy and reliability by changing the structure of the Wheatstone bridge so that V mid is not interfered by the external interference magnetic field component Hx .
2、当存在外界干扰磁场分量Hy时，会导致传感器灵敏度发生变化，为了解决这一问题，本发明通过增加磁场发生装置产生方向相反的偏置磁场，利用偏置磁场改变各磁电阻单元内磁化方向，当外界干扰磁场分量Hy与磁化方向同向时，使灵敏度降低，如果反向，使灵敏度升高，由于左右磁电阻单元感应到方向相反的偏置磁场，所以传感器整体的灵敏度变化很小，提升检测精度。2. When there is an external interfering magnetic field component Hy , the sensitivity of the sensor will change. In order to solve this problem, the present invention adds a magnetic field generating device to generate a bias magnetic field in the opposite direction, and uses the bias magnetic field to change the magnetization direction in each magnetoresistance unit. When the external interfering magnetic field component Hy is in the same direction as the magnetization direction, the sensitivity is reduced. If it is in the opposite direction, the sensitivity is increased. Since the left and right magnetoresistance units sense the bias magnetic fields in the opposite directions, the overall sensitivity of the sensor changes very little, thereby improving the detection accuracy.
3、本发明通过将磁场发生装置设置于磁电阻传感器件下面、磁电阻传感器件内部或者磁电阻条下面，实现为第一组磁电阻单元和第二组磁电阻单元产生磁场方向相反的偏置磁场，这里磁场发生装置可以采用二极磁铁/四极磁铁、通电线圈或者反铁磁层。这种磁场发生装置的布置方式占用体积小，实现了电流传感器的小型化。3. The present invention arranges a magnetic field generating device under the magnetoresistive sensor device, inside the magnetoresistive sensor device or under the magnetoresistive strip, so that the first group of magnetoresistive units and the second group of magnetoresistive units generate a bias magnetic field with opposite magnetic field directions. The magnetic field generating device can be a dipole magnet/quadrupole magnet, a powered coil or an antiferromagnetic layer. This arrangement of the magnetic field generating device occupies a small volume, thereby realizing the miniaturization of the current sensor.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
图1是现有AMR磁阻的结构及其电阻值与外加磁场的关系曲线图；FIG1 is a graph showing the structure of an existing AMR magnetoresistor and the relationship between its resistance and an applied magnetic field;
图2是现有AMR磁阻传感器的惠斯通电桥电路图；FIG2 is a Wheatstone bridge circuit diagram of an existing AMR magnetoresistive sensor;
图3是现有AMR磁阻传感器的惠斯通电桥的实际结构图；FIG3 is a diagram showing the actual structure of a Wheatstone bridge of an existing AMR magnetoresistive sensor;
图4是现有技术集成电流传感器的结构示意图，其示出了被检测电流与被检测磁场的方向；FIG4 is a schematic diagram of the structure of an integrated current sensor in the prior art, which shows the directions of the detected current and the detected magnetic field;
图5是本发明实施例的第一组磁电阻单元和第二组磁电阻单元组成的惠斯通电桥的实际结构图；5 is a diagram showing the actual structure of a Wheatstone bridge composed of a first group of magnetoresistive units and a second group of magnetoresistive units according to an embodiment of the present invention;
图6是本发明实施例的第一组磁电阻单元和第二组磁电阻单元组成的惠斯通电桥电路图；6 is a Wheatstone bridge circuit diagram consisting of a first group of magnetoresistive units and a second group of magnetoresistive units according to an embodiment of the present invention;
图7是本发明实施例的第一组磁电阻单元的各磁电阻单元电阻与被检测磁场的关系图；7 is a diagram showing the relationship between the resistance of each magnetoresistive unit and the detected magnetic field in the first group of magnetoresistive units according to an embodiment of the present invention;
图8是本发明实施例的在外界干扰磁场分量Hx影响下，第一组磁电阻单元的各磁电阻单元电阻的变化图；8 is a diagram showing changes in resistance of each magnetoresistive unit of the first group of magnetoresistive units under the influence of an external interference magnetic field component H x according to an embodiment of the present invention;
图9是现有技术磁电阻传感装置的惠斯通电桥电路图；FIG9 is a Wheatstone bridge circuit diagram of a prior art magnetoresistive sensor device;
图10是现有技术在外界干扰磁场分量Hx影响下，第一组磁电阻单元的各磁电阻单元电阻的变化图；10 is a diagram showing the change in resistance of each magnetoresistive unit of the first group of magnetoresistive units under the influence of an external interference magnetic field component H x in the prior art;
图11是现有技术信号输出Vout与电流产生被检测磁场的关系图；FIG11 is a diagram showing the relationship between the signal output Vout and the magnetic field to be detected generated by the current in the prior art;
图12是本发明实施例的信号输出Vout与电流产生被检测磁场的关系图；12 is a diagram showing the relationship between the signal output Vout and the detected magnetic field generated by the current according to an embodiment of the present invention;
图13是本发明实施例的磁场发生装置采用磁铁的示例图；13 is an example diagram of a magnetic field generating device using a magnet according to an embodiment of the present invention;
图14是本发明实施的磁场发生装置采用内置通电线圈的示例图；FIG14 is an exemplary diagram of a magnetic field generating device implemented in the present invention using a built-in energized coil;
图15是本发明实施例的磁场发生装置采用反铁磁材料的示例图；FIG15 is an example diagram of a magnetic field generating device according to an embodiment of the present invention using antiferromagnetic materials;
图16是本发明实施例的利用方向相反的偏置磁场消除Hy影响的原理示意图；FIG16 is a schematic diagram showing the principle of eliminating the influence of Hy by using a bias magnetic field in the opposite direction according to an embodiment of the present invention;
图17是本发明实施例与现有技术灵敏度变化趋势对比图。FIG. 17 is a comparison chart of sensitivity change trends between the embodiment of the present invention and the prior art.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
本实施例的能够消除外界干扰磁场影响的串联型磁性电流传感器包括导体、隔离器件和磁电阻传感器件，隔离器件位于磁电阻传感器件和导体之间，磁电阻传感器件包括基板以及布置在基板左侧的第一组磁电阻单元和在基板右侧的第二组磁电阻单元，两组磁电阻单元在物理空间中不交叉(这样可以方便设定不同方向的偏置磁场)，第一组磁电阻单元和第二组磁电阻单元组成惠斯通电桥，流经导体的电流在第一、第二组磁电阻单元感测到大小相等方向相反的被检测磁场(可以参考图4)。本实施例的关键改进点在于第一组磁电阻单元和第二组磁电阻单元，如图5和图6所示，第一组磁电阻单元包括从左至右分布的第一磁电阻单元R11、第二磁电阻单元R31、第三磁电阻单元R42和第四磁电阻单元R22，第二组磁电阻单元包括从左至右分布的第五磁电阻单元R41、第六磁电阻单元R21、第七磁电阻单元R12和第八磁电阻单元R32，第一磁电阻单元R11与第二磁电阻单元R31接至供电引脚，第三磁电阻单元R42与第四磁电阻单元R22连接接地引脚，第一磁电阻单元R11与第七磁电阻单元R12串联，第四磁电阻单元R22与第六磁电阻单元R21串联，第七磁电阻单元R12与第六磁电阻单元R21之间引出信号输出引脚Vout2，第二磁电阻单元R31与第八磁电阻单元R32串联，第三磁电阻单元R42与第五磁电阻单元R41串联，在第八磁电阻单元R32与第五磁电阻单元R41之间引出信号输出引脚Vout1。The series magnetic current sensor of this embodiment, which can eliminate the influence of external interference magnetic field, includes a conductor, an isolation device and a magnetoresistive sensor device. The isolation device is located between the magnetoresistive sensor device and the conductor. The magnetoresistive sensor device includes a substrate and a first group of magnetoresistive units arranged on the left side of the substrate and a second group of magnetoresistive units arranged on the right side of the substrate. The two groups of magnetoresistive units do not cross in physical space (so that bias magnetic fields in different directions can be easily set). The first group of magnetoresistive units and the second group of magnetoresistive units form a Wheatstone bridge. The current flowing through the conductor senses the detected magnetic fields of equal magnitude and opposite directions in the first and second groups of magnetoresistive units (see Figure 4). The key improvement of this embodiment lies in the first group of magnetic resistance units and the second group of magnetic resistance units. As shown in Figures 5 and 6, the first group of magnetic resistance units includes a first magnetic resistance unit R11, a second magnetic resistance unit R31, a third magnetic resistance unit R42 and a fourth magnetic resistance unit R22 distributed from left to right, and the second group of magnetic resistance units includes a fifth magnetic resistance unit R41, a sixth magnetic resistance unit R21, a seventh magnetic resistance unit R12 and an eighth magnetic resistance unit R32 distributed from left to right. The first magnetic resistance unit R11 and the second magnetic resistance unit R31 are connected to the power supply pin, and the third magnetic resistance unit R41 is connected to the power supply pin. Unit R42 is connected to the ground pin with the fourth magnetic resistance unit R22, the first magnetic resistance unit R11 is connected in series with the seventh magnetic resistance unit R12, the fourth magnetic resistance unit R22 is connected in series with the sixth magnetic resistance unit R21, a signal output pin Vout2 is led out between the seventh magnetic resistance unit R12 and the sixth magnetic resistance unit R21, the second magnetic resistance unit R31 is connected in series with the eighth magnetic resistance unit R32, the third magnetic resistance unit R42 is connected in series with the fifth magnetic resistance unit R41, and a signal output pin Vout1 is led out between the eighth magnetic resistance unit R32 and the fifth magnetic resistance unit R41.
上面每个磁电阻单元包括磁电阻条和设置于磁电阻条上的并与磁电阻条成预定角度的相互平行的若干个短路条，利用斜着放的短路条改变工作电流的方向。当通过短路条改变工作电流方向不同时，磁电阻单元的电阻随着外加磁场值呈现相反变化趋势，如图1所示，这属于磁阻固有的特性。这里需要定义下本文使用的xyz轴，x轴表示平行于磁电阻条宽度方向，y轴表示平行于磁电阻条长度方向，z轴表示平行于磁电阻条厚度方向。Each of the magnetoresistance units above includes a magnetoresistance strip and a plurality of short-circuit strips arranged on the magnetoresistance strip and parallel to each other at a predetermined angle with the magnetoresistance strip, and the direction of the working current is changed by using the short-circuit strips placed diagonally. When the direction of the working current is changed differently by the short-circuit strips, the resistance of the magnetoresistance unit shows an opposite change trend with the value of the external magnetic field, as shown in Figure 1, which is an inherent characteristic of magnetoresistance. Here we need to define the xyz axis used in this article, the x-axis represents the direction parallel to the width of the magnetoresistance strip, the y-axis represents the direction parallel to the length of the magnetoresistance strip, and the z-axis represents the direction parallel to the thickness of the magnetoresistance strip.
如图5所示，第一组磁电阻单元和第二组磁电阻单元的短路条方向沿着磁电阻传感器件长轴中轴线对称。As shown in FIG. 5 , the directions of the short-circuit bars of the first group of magnetoresistive units and the second group of magnetoresistive units are symmetrical along the central axis of the long axis of the magnetoresistive sensor device.
进一步地，第一磁电阻单元R11、第六磁电阻单元R21、第八磁电阻单元R32和第三磁电阻单元R42的短路条倾斜方向和角度相一致。第七磁电阻单元R12、第四磁电阻单元R22、第二磁电阻单元R31和第五磁电阻单元R41的短路条倾斜方向和角度相一致。从图5和图6可以看出，这两个方向相反。Further, the short-circuit bar tilting direction and angle of the first magnetic resistance unit R11, the sixth magnetic resistance unit R21, the eighth magnetic resistance unit R32 and the third magnetic resistance unit R42 are consistent. The short-circuit bar tilting direction and angle of the seventh magnetic resistance unit R12, the fourth magnetic resistance unit R22, the second magnetic resistance unit R31 and the fifth magnetic resistance unit R41 are consistent. It can be seen from Figures 5 and 6 that the two directions are opposite.
在本实施例中，位于基板左侧的第一磁电阻单元R11、第二磁电阻单元R31、第三磁电阻单元R42和第四磁电阻单元R22感测的被检测磁场方向向右，位于基板右侧的第五磁电阻单元R41、第六磁电阻单元R21、第七磁电阻单元R12和第八磁电阻单元R32感测的被检测磁场方向向左。如图7所示，当磁电阻单元受到被检测磁场作用时，第一磁电阻单元R11和第七磁电阻单元R12的电阻值一起变大，第六磁电阻单元R21和第四磁电阻单元R22的电阻值一起变小，第二磁电阻单元R31和第八磁电阻单元R32的电阻值一起变小，第五磁电阻单元R41和第三磁电阻单元R42的电阻值一起变大，这样对于Vout2(Vout1)两侧电阻一个变大一个变小，随着被检测磁场变化出现信号输出的变化，检测被检测磁场值。举例来说，在定电流驱动下，存在被检测磁场H，R11与R12的总电阻值R1由原来的1000欧姆变为1020欧姆，R21与R22的总电阻值R2由原来的1000欧姆变为980欧姆，那么根据计算公式假定Icc＝2mA，Vout2由原来的1000mV变为980mV，同理，图6中右边Vout1信号变化的分析参见上面，通过信号输出变化检测出被检测磁场大小，所以设计这种惠斯通电桥结构能够满足电流传感器最基本的电流检测目的。In this embodiment, the direction of the detected magnetic field sensed by the first magnetic resistance unit R11, the second magnetic resistance unit R31, the third magnetic resistance unit R42 and the fourth magnetic resistance unit R22 located on the left side of the substrate is rightward, and the direction of the detected magnetic field sensed by the fifth magnetic resistance unit R41, the sixth magnetic resistance unit R21, the seventh magnetic resistance unit R12 and the eighth magnetic resistance unit R32 located on the right side of the substrate is leftward. As shown in FIG7, when the magnetic resistance units are acted upon by the detected magnetic field, the resistance values of the first magnetic resistance unit R11 and the seventh magnetic resistance unit R12 increase together, the resistance values of the sixth magnetic resistance unit R21 and the fourth magnetic resistance unit R22 decrease together, the resistance values of the second magnetic resistance unit R31 and the eighth magnetic resistance unit R32 decrease together, and the resistance values of the fifth magnetic resistance unit R41 and the third magnetic resistance unit R42 increase together, so that one resistance increases and the other decreases on both sides of Vout2 (Vout1), and the signal output changes as the detected magnetic field changes, and the detected magnetic field value is detected. For example, under constant current driving, there is a detected magnetic field H, the total resistance value R1 of R11 and R12 changes from the original 1000 ohms to 1020 ohms, and the total resistance value R2 of R21 and R22 changes from the original 1000 ohms to 980 ohms. Then according to the calculation formula Assuming Icc=2mA, Vout2 changes from the original 1000mV to 980mV. Similarly, the analysis of the change of Vout1 signal on the right side of Figure 6 can be found above. The magnitude of the detected magnetic field is detected by the change of signal output, so the design of this Wheatstone bridge structure can meet the most basic current detection purpose of the current sensor.
当存在平行于磁电阻条宽度方向的外界干扰磁场分量Hx时，第一磁电阻单元R11和第七磁电阻单元R12、第二磁电阻单元R31和第八磁电阻单元R32、第六磁电阻单元R21和第四磁电阻单元R22以及第三磁电阻单元R42和第五磁电阻单元R41的电阻值变化趋势相反，所以此设计可以有效地减小外界干扰磁场分量Hx的影响。When there is an external interference magnetic field component Hx parallel to the width direction of the magnetic resistance strip, the resistance value change trends of the first magnetic resistance unit R11 and the seventh magnetic resistance unit R12, the second magnetic resistance unit R31 and the eighth magnetic resistance unit R32, the sixth magnetic resistance unit R21 and the fourth magnetic resistance unit R22, and the third magnetic resistance unit R42 and the fifth magnetic resistance unit R41 are opposite, so this design can effectively reduce the influence of the external interference magnetic field component Hx .
现有设计(背景技术提到的专利)惠斯通电桥电路如图9所示。如图10所示，当采用定电流驱动，被检测磁场等于0时，受到方向向右的外界干扰磁场分量Hx影响(Hx＝2mT)，R205的电阻值由500欧姆变为510欧姆，R202的电阻值由500欧姆变为490欧姆，那么根据计算公式假定Icc＝2mA，Vout1由原来的500mV变为490mV，所以当外界存在Hx影响的时候，现有技术的Vmid(当被检测磁场为0时，信号输出值)会发生变化，对于Vout2信号变化的分析参照上面Vout1的分析过程，如图11所示，图中实线是Hx＝0的信号输出，虚线是Hx＝2mT的信号输出，中点电位Vmid、Vout1以及Vout2发生变化会导致整个系统检测精度恶化。为了解决这个问题，本实施例对惠斯通电桥重新设计，设计后的结构如图5和图6所示，具体分析如下：如图8所示，当采用定电流驱动，被检测磁场等于0时，受到方向向右的外界干扰磁场分量Hx影响(Hx＝2mT)，R11的电阻值由500欧姆变为510欧姆，R12的电阻值由500欧姆变为490欧姆，一个阻值增大一个阻值减小从而降低外界Hx产生的误差。同理，被检测磁场等于0时，R21的电阻值由500欧姆变为490欧姆，R22的电阻值由500欧姆变为510欧姆，一个阻值减小一个阻值增大从而降低外界Hx产生的误差，对于R31和R32，R41和R42也符合上面规律。所以，当外界存在Hx影响的时候，从图12可以看出，新设计的中点电位Vmid不会发生变化。因此，新设计的惠斯通电桥能够在定电流驱动时，使中点电位Vmid不受外界干扰磁场分量Hx影响，从而提升电流传感器检测精度。The existing design (the patent mentioned in the background technology) of the Wheatstone bridge circuit is shown in Figure 9. As shown in Figure 10, when a constant current drive is used and the detected magnetic field is equal to 0, it is affected by the external interference magnetic field component H x in the right direction (H x = 2mT), the resistance value of R205 changes from 500 ohms to 510 ohms, and the resistance value of R202 changes from 500 ohms to 490 ohms. Then according to the calculation formula Assuming Icc=2mA, Vout1 changes from the original 500mV to 490mV, so when there is an external influence of Hx , the Vmid of the prior art (the signal output value when the detected magnetic field is 0) will change. The analysis of the change of the Vout2 signal refers to the above analysis process of Vout1, as shown in Figure 11. The solid line in the figure is the signal output of Hx =0, and the dotted line is the signal output of Hx =2mT. Changes in the midpoint potential Vmid , Vout1 and Vout2 will cause the detection accuracy of the entire system to deteriorate. In order to solve this problem, the present embodiment redesigns the Wheatstone bridge. The designed structure is shown in Figures 5 and 6. The specific analysis is as follows: As shown in Figure 8, when a constant current drive is adopted and the detected magnetic field is equal to 0, it is affected by the external interference magnetic field component Hx in the right direction ( Hx =2mT), and the resistance value of R11 changes from 500 ohms to 510 ohms, and the resistance value of R12 changes from 500 ohms to 490 ohms. One resistance value increases and the other resistance value decreases, thereby reducing the error caused by the external Hx . Similarly, when the detected magnetic field is equal to 0, the resistance value of R21 changes from 500 ohms to 490 ohms, and the resistance value of R22 changes from 500 ohms to 510 ohms. One resistance value decreases and the other resistance value increases, thereby reducing the error caused by the external H x . For R31 and R32, R41 and R42 also conform to the above rules. Therefore, when there is an external influence of H x , it can be seen from Figure 12 that the midpoint potential V mid of the new design will not change. Therefore, the newly designed Wheatstone bridge can make the midpoint potential V mid not affected by the external interference magnetic field component H x when the constant current is driven, thereby improving the detection accuracy of the current sensor.
除了上面的结构，本实施例的电流传感器还包括磁场发生装置，下面将介绍三种不同结构形式的磁场发生装置。In addition to the above structure, the current sensor of this embodiment also includes a magnetic field generating device. Three different structural forms of magnetic field generating devices are introduced below.
①第一种磁场发生装置①The first magnetic field generating device
如图13所示，磁场发生装置采用二极磁铁或者四级磁铁，磁铁设置在磁电阻传感器件的下面，左右两侧磁铁的磁极相反，若左侧N极在上，S极在下，那么右侧S极在上，N极在下，以此为第一组磁电阻单元和第二组磁电阻单元产生磁场方向相反的偏置磁场。As shown in FIG13 , the magnetic field generating device uses a two-pole magnet or a four-pole magnet, and the magnet is arranged under the magnetoresistive sensor device. The magnetic poles of the left and right magnets are opposite. If the N pole on the left is on the top and the S pole on the bottom, then the S pole on the right is on the top and the N pole on the bottom, thereby generating a bias magnetic field with opposite magnetic field directions for the first group of magnetoresistive units and the second group of magnetoresistive units.
②第二种磁场发生装置②The second magnetic field generating device
如图14所示，磁场发生装置采用在磁电阻传感器件的内部设置线圈，在左侧第一组磁电阻单元与右侧第二组磁电阻单元中线圈电流方向相反，导致线圈电流产生的偏置磁场方向相反。As shown in FIG14 , the magnetic field generating device uses a coil set inside the magnetoresistive sensor device. The coil current directions in the first group of magnetoresistive units on the left and the second group of magnetoresistive units on the right are opposite, resulting in opposite directions of the bias magnetic fields generated by the coil currents.
③第三种磁场发生装置③The third magnetic field generating device
如图15所示，在磁电阻条的下面、基底的上面增加反铁磁层(AFM)，对第一组磁电阻单元和第二组磁电阻单元施加交换偏置磁场，且交换偏置磁场方向相反。上述磁场方向是由激光退火的方法确定的。反铁磁层的材料可以为IrMn、FeMn、NiO、PtMn等。激光退火的方法可以概述为，对磁电阻传感器件整体施加向上(正的Hy方向)磁场，并利用激光快速加热左侧的磁电阻条(R11、R31、R42、R22)使AFM层的温度超过奈尔温度，随后在磁场中冷却。之后对磁电阻传感器件整体施加向下(负的Hy方向)的磁场，并利用激光快速加热右侧的磁电阻条(R41、R21、R12、R32)使AFM层的温度超过奈尔温度，随后在磁场中冷却。通过上述激光退火的方法，就能使左右侧磁电阻单元的交换偏置磁场的方向相反。As shown in FIG15 , an antiferromagnetic layer (AFM) is added below the magnetoresistive strip and above the substrate, and an exchange bias magnetic field is applied to the first group of magnetoresistive units and the second group of magnetoresistive units, and the exchange bias magnetic field has opposite directions. The above magnetic field direction is determined by the laser annealing method. The material of the antiferromagnetic layer can be IrMn, FeMn, NiO, PtMn, etc. The laser annealing method can be summarized as applying an upward (positive Hy direction) magnetic field to the magnetoresistive sensor device as a whole, and using a laser to quickly heat the magnetoresistive strips (R11, R31, R42, R22) on the left side to make the temperature of the AFM layer exceed the Neel temperature, and then cooling in the magnetic field. Thereafter, a downward (negative Hy direction) magnetic field is applied to the magnetoresistive sensor device as a whole, and using a laser to quickly heat the magnetoresistive strips (R41, R21, R12, R32) on the right side to make the temperature of the AFM layer exceed the Neel temperature, and then cooling in the magnetic field. Through the above laser annealing method, the directions of the exchange bias magnetic fields of the left and right magnetoresistive units can be made opposite.
上面三种结构的磁场发生装置都是为了能够产生方向相反的偏置磁场，一个磁场方向朝上，一个磁场方向朝下，偏置磁场的方向会影响磁电阻单元的磁化方向，使与其方向相一致。如图16所示，假设存在方向向上的外界干扰磁场分量Hy，左侧偏置磁场方向向上导致磁化方向M向上，右侧偏置磁场方向向下导致磁化方向M向下，当Hy与磁化方向同向时，灵敏度降低，当Hy与磁化方向反向时，灵敏度升高，两部分加和起来保证灵敏度基本不变(如图17所示)，提升检测精度。同时，将磁场发生装置与磁电阻传感器件集成在一起，避免占用传感器内部空间，实现小型化设计，外观更加小巧，经济实用。The magnetic field generating devices of the above three structures are all designed to generate bias magnetic fields in opposite directions, one magnetic field is directed upward, and the other is directed downward. The direction of the bias magnetic field will affect the magnetization direction of the magnetoresistive unit and make it consistent with its direction. As shown in Figure 16, assuming that there is an external interference magnetic field component Hy in an upward direction, the left bias magnetic field in an upward direction causes the magnetization direction M to be upward, and the right bias magnetic field in a downward direction causes the magnetization direction M to be downward. When Hy is in the same direction as the magnetization direction, the sensitivity decreases, and when Hy is in the opposite direction to the magnetization direction, the sensitivity increases. The two parts are added together to ensure that the sensitivity remains basically unchanged (as shown in Figure 17), thereby improving the detection accuracy. At the same time, the magnetic field generating device is integrated with the magnetoresistive sensor device to avoid occupying the internal space of the sensor, realize a miniaturized design, and have a more compact appearance, which is economical and practical.
总之，本发明通过改变惠斯通电桥的结构使得中点电位Vmid不受外界干扰磁场分量Hx的干扰；再通过增加磁场发生装置产生方向相反的偏置磁场，够减小外界干扰磁场分量Hy导致的灵敏度变化；本发明从这两个方面消除外界干扰磁场x方向和y方向的影响，提升检测精度，在电流传感器领域具有广泛的应用前景。In summary, the present invention changes the structure of the Wheatstone bridge so that the midpoint potential V mid is not disturbed by the external interference magnetic field component H x ; and then generates a bias magnetic field in the opposite direction by adding a magnetic field generating device, which can reduce the sensitivity change caused by the external interference magnetic field component Hy ; the present invention eliminates the influence of the external interference magnetic field in the x direction and the y direction from these two aspects, improves the detection accuracy, and has broad application prospects in the field of current sensors.
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.
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