CN117881245A

CN117881245A - Display device and mobile electronic device

Info

Publication number: CN117881245A
Application number: CN202311258097.1A
Authority: CN
Inventors: 俞炳汉; 朴政遇; 朴晑妸; 李大荣
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2022-10-11
Filing date: 2023-09-27
Publication date: 2024-04-12

Abstract

The present disclosure relates to a display device and a mobile electronic device. According to an embodiment, the display device may include a display panel, which may include a display region and a non-display region. The display panel may include: a first subpixel including a first light emitting region; a second subpixel including a second light emitting region; a third subpixel including a third light emitting region; a sensor pixel including a light sensing region; a pixel defining layer separating the first to third light emitting regions and the light sensing region; and a partition wall disposed on the pixel defining layer to surround the sensor pixels.

Description

Display device and mobile electronic device

Cross Reference to Related Applications

The present application claims priority and ownership of korean patent application No. 10-2022-013096 filed on 10-11 of 2022 and korean patent application No. 10-2023-0051033 filed on 18 of 2023 and korean intellectual property office, the contents of which are incorporated herein by reference in their entirety.

Technical Field

The present disclosure relates to a display device and a mobile electronic device including the same.

Background

With the development of information society, demands for display devices that display images are increasing in various fields. Display devices are applied to various electronic devices such as smart phones, digital cameras, notebook computers, tablet Personal Computers (PCs), navigation devices, and smart televisions. Mobile electronic devices such as smartphones or tablet PCs provide various functions such as image capturing, fingerprint recognition and face recognition.

In recent years, with the development of the optical industry and the semiconductor industry, devices have been developed that acquire biometric information such as skin humidity or blood pressure and information of components of fruits or vegetables in an oscillometric (oscillometric) manner using a photosensor.

However, the oscillometric composition measuring apparatus using the light sensor requires a separate light source, sensor, and display apparatus, and must additionally carry a portable smart phone or tablet PC for executing an application program. In this regard, a method for integrating a constituent measuring device using a light sensor with a mobile electronic device has been recently proposed.

Disclosure of Invention

Aspects of the present disclosure provide a display device having improved portability and convenience by embedding a light sensor in a display panel, and a mobile electronic device including the same.

Aspects of the present disclosure also provide a display device having improved sensing performance by reducing leakage current between a light sensor and a pixel adjacent to the light sensor, and a mobile electronic device including the same.

However, aspects of the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referencing the detailed description of the present disclosure given below.

According to an embodiment of the present disclosure, a display device may include a display panel, which may include a display region and a non-display region. The display panel may include: a first subpixel including a first light emitting region; a second subpixel including a second light emitting region; a third subpixel including a third light emitting region; a sensor pixel including a light sensing region; a pixel defining layer separating the first to third light emitting regions and the light sensing region; and a partition wall disposed on the pixel defining layer to completely surround the sensor pixels.

The first subpixel may include a first light emitting layer disposed in the first light emitting region and on a portion of the pixel defining layer adjacent to the first light emitting region. The second subpixel may include a second light emitting layer disposed in the second light emitting region and on a portion of the pixel defining layer adjacent to the second light emitting region. The third subpixel may include a third light emitting layer disposed in the third light emitting region and on a portion of the pixel defining layer adjacent to the third light emitting region. The sensor pixel may include a photoelectric conversion layer disposed in the light sensing region and on a portion of the pixel defining layer adjacent to the light sensing region.

The first to third sub-pixels may be repeatedly arranged along the first and second directions so as to be arranged in a matrix form. The sensor pixel may be disposed adjacent to the first to third sub-pixels, and detect biometric information of a user using at least one of red light emitted from the first sub-pixel, green light emitted from the second sub-pixel, and blue light emitted from the third sub-pixel.

The biometric information may include fingerprint information, iris information, blood pressure information, and blood flow information.

The first and third sub-pixels may be alternately arranged in a kth row along the first direction. The second sub-pixels may be arranged in each of the (k-1) th and (k+1) th rows along the first direction. The sensor pixel may be disposed between the first subpixel and the third subpixel in the kth row, where k is a positive integer.

The second sub-pixels and the sensor pixels may be alternately arranged in columns along the second direction perpendicular to the first direction.

The sensor pixels may include first sensor pixels that detect the blood pressure information and the blood flow information using the red light emitted from the first sub-pixel and the blue light emitted from the third sub-pixel.

The sensor pixels may include second sensor pixels that detect the fingerprint information using the green light emitted from the second sub-pixels.

The partition walls surrounding the second sensor pixels may have a uniform height.

The photoelectric conversion layer of the sensor pixel may include a green overlapping region overlapping a portion of the second light emitting layer on the pixel defining layer and a non-overlapping region other than the green overlapping region.

A portion of the partition wall passes through a deposition region of the second light emitting layer on the pixel defining layer. A dummy organic material formed by the same process as that of the second light emitting layer may be disposed on the portion of the partition wall.

A cathode may be disposed on the dummy organic material on the partition wall. The cathode on the partition wall may be connected to cathodes disposed in the first to third light emitting regions and the light sensing region.

According to embodiments of the present disclosure, a mobile electronic device may include a display panel in which a light sensor is embedded. The display panel may include: a first subpixel including a first light emitting region; a second subpixel including a second light emitting region; a third subpixel including a third light emitting region; a sensor pixel including a light sensing region; a pixel defining layer separating the first to third light emitting regions and the light sensing region; and a partition wall disposed on the pixel defining layer to completely surround the sensor pixels.

The first and third sub-pixels may be alternately arranged in a kth row along the first direction. The second sub-pixels may be arranged in each of a (k-1) th row and a (k+1) th row along the first direction, and the sensor pixels may be disposed between the first sub-pixels and the third sub-pixels in the k-th row, where k is a positive integer.

The sensor pixels may include first sensor pixels that detect blood pressure information and blood flow information using the red light emitted from the first sub-pixel and the blue light emitted from the third sub-pixel.

According to an embodiment of the present disclosure, a display panel including a display region and a non-display region, wherein the display panel may include: a first subpixel including a first light emitting region disposed at the kth row; a second subpixel including a second light emitting region; a third subpixel including a third light emitting region disposed at the kth row; a sensor pixel including a light sensing region; a pixel defining layer separating the first, second, third, and light sensing regions; and a partition wall disposed on the pixel defining layer to surround the sensor pixels. The partition wall may include a first partition wall portion disposed between a portion of the photoelectric conversion layer of the sensor pixel and a portion of the first light emitting layer of the first sub-pixel on the pixel defining layer, and a second partition wall portion disposed between a portion of the photoelectric conversion layer of the sensor pixel and a portion of the third light emitting layer of the third sub-pixel on the pixel defining layer. A predetermined gap may be provided between the first partition wall portion and the second partition wall portion to form a first slit provided between the sensor pixel and the second sub-pixel in the (k-1) th row and a second slit provided between the sensor pixel and the second sub-pixel in the (k+1) th row, where k is a positive integer.

The partition wall is completely removed in a region corresponding to the first slit and the second slit.

The photoelectric conversion layer of the sensor pixel includes a green overlap region overlapping a portion of the second light emitting layer of the second sub-pixel on the pixel defining layer.

Drawings

These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a plan view of a display device included in a mobile electronic device according to an embodiment;

FIG. 2 is a block diagram of a mobile electronic device according to an embodiment;

fig. 3 is an example diagram illustrating fingerprint detection of a display device according to an embodiment;

FIG. 4 is a circuit diagram of a display pixel and a sensor pixel according to an embodiment;

fig. 5 is a plan view showing an arrangement relationship between display pixels and sensor pixels of the display panel according to the embodiment;

FIG. 6 is a cross-sectional view of the display panel taken along line A-A' of FIG. 5;

fig. 7 is a plan view of a display panel in which each partition wall includes at least one slit structure according to an embodiment;

FIG. 8 is a cross-sectional view of the display panel taken along line B-B' of FIG. 7;

FIG. 9 is a cross-sectional view of the display panel taken along line C-C' of FIG. 7;

FIG. 10 is a plan view of a display panel in which at least a portion of each light sensor overlaps a pixel, according to an embodiment;

FIG. 11 is a cross-sectional view of the display panel taken along line D-D' of FIG. 10;

FIG. 12 is a plan view of a display panel in which at least a portion of each light sensor overlaps a first subpixel according to an embodiment;

FIG. 13 is a plan view of a display panel in which at least a portion of each light sensor overlaps a third subpixel, according to an embodiment; and

fig. 14 is a plan view of a display panel in which at least a portion of each light sensor overlaps with first to third sub-pixels according to an embodiment.

Detailed Description

The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

It will also be understood that when a layer or substrate is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like elements throughout the specification.

It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element discussed below could be termed a second element without departing from the teachings of the present invention. Similarly, the second element may also be referred to as a first element.

The features of each of the various embodiments of the disclosure may be combined with each other, partially or fully, and may be technically interacted in various ways, and the various embodiments may be implemented independently of each other or may be implemented together in association with each other.

Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

Fig. 1 is a plan view of a display device included in a mobile electronic device 1 according to an embodiment.

In fig. 1, a first direction DR1, a second direction DR2, and a third direction DR3 are defined. The first direction DR1 may be a direction parallel to one side of the mobile electronic apparatus 1 when viewed in a plan view, for example, a horizontal direction of the mobile electronic apparatus 1. The second direction DR2 may be a direction parallel to the other side contacting the side of the mobile electronic device 1 when seen in a plan view, for example, a vertical direction of the mobile electronic device 1. For convenience of description, one side in the first direction DR1 refers to a right direction in a plan view, the other side in the first direction DR1 refers to a left direction in a plan view, one side in the second direction DR2 refers to an upward direction in a plan view, and the other side in the second direction DR2 refers to a downward direction in a plan view. The third direction DR3 may be a thickness direction of the mobile electronic device 1. However, the directions mentioned in the embodiments are to be understood as relative directions, and the embodiments are not limited to the mentioned directions.

The terms "upper", "upper surface" and "front surface" used herein based on the third direction DR3 refer to the display surface side of the display panel 10, and the terms "lower", "lower surface" and "rear surface" refer to the side of the display panel 10 opposite to the display surface side.

Referring to fig. 1, examples of a mobile electronic device 1 may include various electronic devices that provide a display screen. Examples of the mobile electronic device 1 may include, but are not limited to, mobile phones, smart phones, tablet PCs, mobile communication terminals, electronic notebooks, electronic books, personal Digital Assistants (PDAs), portable Multimedia Players (PMPs), navigation devices, ultra Mobile PCs (UMPCs), televisions, game machines, wristwatch-type electronic devices, head mounted displays, monitors of PCs, notebook computers, car dashboards, digital cameras, video cameras, outdoor billboards, electronic display boards, various medical devices, various inspection devices, various home appliances including display areas such as refrigerators and washing machines, and internet of things (IoT) devices. Representative examples of the mobile electronic device 1 to be described below may be, but are not limited to, a smart phone, a tablet PC, or a notebook computer.

The mobile electronic device 1 may include a display device including a display panel 10, a panel driving circuit 20, a circuit board 30, and a readout circuit 40.

The display device of the mobile electronic device 1 comprises a display panel 10, the display panel 10 comprising an active area AAR and an inactive area NAR. The active area AAR includes a display area in which an image is displayed. The active area AAR may completely overlap the display area. A plurality of display pixels PX displaying an image may be disposed in the display region. Each display pixel PX may include a light emitting element EL (see fig. 4). The active area AAR may be referred to as a "display area".

The active area AAR further includes a biosensor area. The biosensor region is a region that reacts to light and is configured to sense the amount or wavelength of incident light. The biosensor region may overlap with the display region. For example, the biosensor area may be provided only in a limited area required for fingerprint recognition and/or iris recognition within the active area AAR. In this case, the biosensor region may overlap with a portion of the display region, but may not overlap with other portions of the display region. In another example, the biosensor region may be defined as an area exactly the same as the active area AAR. In this case, the entire active area AAR may be used as an area for fingerprint detection and/or iris recognition. A plurality of sensor pixels PS that react to light may be disposed in the biosensor region. Each of the sensor pixels PS may include a photoelectric converter PD (see fig. 4) that senses incident light and converts the incident light into an electrical signal. The biosensor region may refer to a region in which the light sensor is disposed. The light sensor may be configured to acquire biometric information of the user and may be embedded inside the display panel 10. The biometric information includes fingerprint information, iris information, blood pressure information, and blood flow information.

The inactive area NAR is disposed around the active area AAR. The inactive area NAR may be a bezel area. The non-active region NAR may surround all sides (four sides in the drawing) of the active region AAR, but the present disclosure is not limited thereto. The non-active region NAR may be referred to as a "non-display region".

The non-active area NAR may be disposed around the active area AAR. The panel driving circuit 20 may be disposed in the inactive area NAR. The panel driving circuit 20 may drive the display pixels PX and/or the sensor pixels PS. The panel driving circuit 20 may output signals and voltages for driving the display panel 10. The panel driving circuit 20 may be formed as an integrated circuit and mounted on the display panel 10. In the non-active region NAR, signal lines for transmitting signals between the panel driving circuit 20 and the display pixels PX and/or the sensor pixels PS disposed in the active region AAR may be further provided. In another example, the panel driving circuit 20 may be mounted on the circuit board 30.

A signal line or a readout circuit 40 for transmitting a signal to the display pixel PX and/or the sensor pixel PS disposed in the active area AAR may be disposed in the inactive area NAR. The readout circuit 40 may be connected to each sensor pixel PS through a sensor signal line, and may receive a current flowing through each sensor pixel PS to detect a fingerprint input of a user. The readout circuitry 40 may be formed as an integrated circuit and attached to the circuit board 30 using a Chip On Film (COF) method. However, the present disclosure is not limited thereto, and the readout circuitry 40 may also be attached to the non-active region NAR of the display panel 10 using a Chip On Glass (COG) method, a plastic flip Chip (COP) method, or an ultrasonic bonding method.

The circuit board 30 may be attached to one end of the display panel 10 using an Anisotropic Conductive Film (ACF). The leads of the circuit board 30 may be electrically connected to a pad unit including a plurality of pads of the display panel 10. The circuit board 30 may be a flexible printed circuit board or a flexible film such as a flip chip film.

Fig. 2 is a block diagram of a mobile electronic device 1 (see fig. 1) according to an embodiment.

Referring to fig. 2, the mobile electronic device 1 includes a processor 70, a panel driving circuit 20, and a readout circuit 40.

The processor 70 supplies the image signals RGB and a plurality of control signals received from the outside to the timing controller 21. The processor 70 may further include a Graphic Processing Unit (GPU) which provides graphics for image signals RGB received from the outside. The image signals RGB may be supplied to the timing controller 21 as an image source that has completed graphics processing by the GPU. The image signal RGB may have a frequency of, for example, 1Hz to 120 Hz.

The control signals supplied by the processor 70 include a first mode control signal MO1, a second mode control signal MO2, a clock signal, and an enable signal.

The first mode control signal MO1 may include a signal for displaying a normal image. The second mode control signal MO2 may include a sensing mode signal for sensing biometric information, for example, fingerprint F (see fig. 3) or iris information. The second mode control signal MO2 may include a signal for controlling a plurality of frame periods. For example, the second mode control signal MO2 may be a signal for controlling driving of the display panel 10 (see fig. 1) during the first and second frame periods. Specifically, the second mode control signal MO2 may be a signal for controlling some display pixels PX to emit light and other display pixels PX to emit no light during the first frame period. In addition, the second mode control signal MO2 may be a signal for controlling reading of information of the fingerprint F or iris of a finger by digital sensing data detected by some sensor pixels PS in the first frame period and controlling excluding of the digital sensing data detected by other sensor pixels PS.

The case in which the biometric information acquired by the mobile electronic device 1 using the sensor pixels PS is the fingerprint F of the finger will be mainly described below. However, the present disclosure is not limited thereto. For example, the mobile electronic device 1 may detect iris information included in an eyeball of a user using the sensor pixel PS, and may also detect various biometric information such as blood pressure, blood flow, and heart rate.

The processor 70 supplies the first mode control signal MO1 to the timing controller 21 to display an image on the display panel 10. The processor 70 provides the second mode control signal MO2 to the timing controller 21 to detect the fingerprint of the user. The timing controller 21 drives the display pixels PX of the display panel 10 according to the first mode control signal MO1, and drives the sensor pixels PS of the display panel 10 according to the second mode control signal MO 2.

The panel driving circuit 20 includes a data driver 22 driving display pixels PX of the display panel 10, a scan driver 23 driving the display pixels PX and the sensor pixels PS, and a timing controller 21 controlling driving timings of the data driver 22 and the scan driver 23. In addition, the panel driving circuit 20 may further include a power supply unit 24 and an emission control driver 25.

The timing controller 21 receives an image signal from a host (e.g., a processor) of the mobile electronic device 1. The timing controller 21 may output the image DATA and the DATA control signal DCS to the DATA driver 22. In addition, the timing control unit 21 may generate a scan control signal SCS for controlling an operation timing of the scan driver 23 and an emission control driving signal ECS for controlling an operation timing of the emission control driver 25. For example, the timing controller 21 may generate the scan control signal SCS and the emission control driving signal ECS, and output the scan control signal SCS to the scan driver 23 through the scan control line, and output the emission control driving signal ECS to the emission control driver 25 through the emission control driving line.

The timing controller 21 may generate the first data control signal DCS1 upon receiving the first mode control signal MO1 from the processor 70. The timing controller 21 may output the first data control signal DCS1 to the data driver 22. In addition, the timing controller 21 may generate the second data control signal DCS2 upon receiving the second mode control signal MO2 from the processor 70. The timing controller 21 may output the second data control signal DCS2 to the data driver 22. The second data control signal MO2 may be a signal controlling the alternation of the first frame period and the second frame period.

The DATA driver 22 may convert the image DATA into an analog DATA voltage and output the analog DATA voltage to the DATA lines DL. The scan driver 23 may generate a scan signal in response to the scan control signal SCS and sequentially output the scan signal to the scan lines SL.

The power supply unit 24 may generate a driving voltage ELVDD (see fig. 4) and supply the driving voltage ELVDD to the power supply voltage line VL. In addition, the power supply unit 24 may generate the common voltage ELVSS (see fig. 4) and supply the common voltage ELVSS to the power supply voltage line VL. The power supply voltage line VL may include a driving voltage line and a common voltage line. The driving voltage ELVDD may be a high potential voltage for driving the light emitting element and the photoelectric converter, and the common voltage ELVSS may be a low potential voltage for driving the light emitting element and the photoelectric converter. That is, the driving voltage ELVDD may have a potential higher than that of the common voltage ELVSS.

The emission control driver 25 may generate an emission control signal in response to the emission control driving signal ECS and sequentially output the emission control signal to the emission control line EML. Although the emission control driver 25 is shown as being separate from the scan driver 23, the present disclosure is not limited thereto, and the emission control driver 25 may be embedded in the scan driver 23.

The readout circuit 40 may be connected to each sensor pixel PS through a readout line ROL and may receive a current flowing through each sensor pixel PS to detect a fingerprint input of a user. The readout circuit 40 may generate digital sensing data according to the magnitude of the current sensed by each sensor pixel PS and transmit the digital sensing data to the processor 70. The processor 70 may analyze the digital sensed data and determine whether the digital sensed data matches a fingerprint of the user by comparing the digital sensed data to a preset fingerprint. The preset function may be performed when the preset fingerprint is the same as the digital sensing data transmitted from the readout circuit 40.

The display panel 10 includes a plurality of display pixels PX, a plurality of sensor pixels PS, a plurality of scan lines SL connected to the display pixels PX and the sensor pixels PS, a plurality of data lines DL and a plurality of emission control lines EML connected to the display pixels PX, and a plurality of readout lines ROL connected to the sensor pixels PS.

Each of the display pixels PX may be connected to at least one of the scan lines SL, one of the data lines DL, one of the emission control lines EML, and the power supply voltage line VL.

Each of the sensor pixels PS may be connected to one of the scan lines SL, one of the readout lines ROL, and the power supply voltage line VL.

The scan line SL may connect the scan driver 23 to the display pixel PX and the sensor pixel PS. The scan line SL may supply the scan signal output from the scan driver 23 to the display pixel PX and the sensor pixel PS.

The data line DL may connect the data driver 22 to the display pixel PX. The data line DL may supply the image data output from the data driver 22 to the display pixel PX.

The emission control line EML may connect the emission control driver 25 to the display pixel PX. The emission control line EML may supply an emission control signal output from the emission control driver 25 to the display pixel PX.

The readout line ROL may connect the sensor pixel PS to the readout circuit 40. The readout line ROL may supply a sensing current generated according to a photocurrent output from each of the sensor pixels PS to the readout circuit 40. Thus, the readout circuit 40 can detect the fingerprint of the user.

A plurality of power supply voltage lines VL may connect the power supply unit 24 to the display pixel PX and the sensor pixel PS. The power supply voltage line VL may supply the driving voltage ELVDD or the common voltage ELVSS received from the power supply unit 24 to the display pixel PX and the sensor pixel PS.

Fig. 3 is an example diagram illustrating fingerprint detection of a display device according to an embodiment. Fig. 3 shows how the display device detects a fingerprint. However, the display device may also acquire biometric information such as iris information, blood pressure, or heart rate in a similar manner.

Referring to fig. 3, the mobile electronic device 1 may further include a window WDL provided on the display panel 10. The display panel 10 may include a substrate SUB, a display layer DPL disposed on the substrate SUB and including display pixels PX and sensor pixels PS, and an encapsulation layer TFEL disposed on the display layer DPL.

When the user's finger touches the upper surface of the window WDL of the mobile electronic device 1, light output from the display pixels PX of the display panel 10 may be reflected by the ridges RID of the user's fingerprint F and the valleys VAL between the ridges RID. In this case, the ridge RID of the fingerprint F contacts the upper surface of the window WDL, but the valley VAL of the fingerprint F does not contact the window WDL. That is, the upper surface of the window WDL contacts air in the valley VAL.

Since the refractive index of the finger in which the fingerprint F is disposed and the refractive index of air are different, the amount of light reflected by the ridge RID of the fingerprint F and the amount of light reflected by the valley VAL of the fingerprint F may be different. Therefore, the ridges RID and the valleys VAL of the fingerprint F can be detected based on the difference in the amount of light reflected (i.e., the difference in the amount of light incident on each sensor pixel PS). Since each sensor pixel PS outputs an electrical signal (i.e., a sensing current) according to a difference in the amount of reflected light, a fingerprint pattern of a finger can be recognized.

When the sensor pixel PS adjacent to the plurality of display pixels PX outputs the sensing current, a portion of the emission current required for the display pixels PX to emit light may leak to the sensor pixel PS adjacent to the display pixels PX. Accordingly, the sensing current of the sensor pixel PS adjacent to the display pixel PX may change, and the fingerprint pattern of the finger may be erroneously recognized. This will be described below with reference to fig. 4.

Fig. 4 is a circuit diagram of the display pixel PX and the sensor pixel PS according to an embodiment.

In fig. 4, a circuit diagram of display pixels PX connected to a kth scan initializing line GILk, a kth scan line GWLk, a kth scan controlling line GCLk, a (k-1) th scan line GWLk-1, and a jth data line DLj, and sensor pixels PS connected to a kth scan line GWLk, a kth reset controlling line RSTLk, and a qth readout line ROLq are shown, wherein k, j, and q are each positive integers.

The display pixel PX may include a light emitting element EL, a plurality of switching elements, and a first capacitor Cst. The light emitting element EL includes a light emitting portion that emits light.

The driving transistor DT may include a gate electrode, a first electrode, and a second electrode. The driving transistor DT controls a drain-source current (Ids) (hereinafter, referred to as "driving current") flowing between the first electrode and the second electrode according to a data voltage applied to the gate electrode. The driving current (Ids) flowing through the channel of the driving transistor DT is proportional to the square of the difference between the voltage (Vgs) between the first electrode and the gate electrode of the driving transistor DT and the threshold voltage (Vth), as shown in equation 1.

Ids＝k′×(Vgs-Vth) ² …(1)

Where Ids is the driving current, i.e. the drain-source current flowing through the channel of the driving transistor DT, k' is the scaling factor determined by the structure and physical characteristics of the driving transistor DT, vgs is the voltage between the first electrode and the gate electrode of the driving transistor DT, and Vth is the threshold voltage of the driving transistor DT.

The light emitting element EL emits light according to the driving current (Ids). The amount of light emitted from the light emitting element EL may increase with an increase in driving current (Ids).

The light emitting element EL may be an Organic Light Emitting Diode (OLED) including an organic light emitting layer disposed between an anode 641 (see fig. 6) and a cathode 660 (see fig. 6). Alternatively, the light emitting element EL may be a quantum dot light emitting element including a quantum dot light emitting layer disposed between the anode 641 and the cathode 660. Alternatively, the light emitting element EL may be an inorganic light emitting element including an inorganic semiconductor provided between the anode 641 and the cathode 660. When the light emitting element EL is an inorganic light emitting element, it may include a micro light emitting diode or a nano light emitting diode.

The anode 641 of the light emitting element EL may be connected to the second electrode of the fifth transistor T5 and the first electrode of the sixth transistor T6, and the cathode 660 may be connected to the common voltage line VSL to which the common voltage ELVSS is applied.

The first transistor T1 is turned on by a kth scan signal of the kth scan line GWLk to connect the first electrode of the driving transistor DT to the jth data line DLj. Accordingly, the data voltage of the j-th data line DLj may be applied to the first electrode of the driving transistor DT. The first transistor T1 may have a gate electrode connected to the kth scan line GWLk, a first electrode connected to the jth data line DLj, and a second electrode connected to the first electrode of the driving transistor DT.

The second transistor T2 is turned on by a kth scan control signal of the kth scan control line GCLk to connect the gate electrode and the second electrode of the driving transistor DT. The driving transistor DT operates as a diode when the gate electrode and the second electrode of the driving transistor DT are connected. The second transistor T2 may have a gate electrode connected to the kth scan control line GCLk, a first electrode connected to the gate electrode of the driving transistor DT, and a second electrode connected to the second electrode of the driving transistor DT.

The third transistor T3 is turned on by a kth scan initialization signal of the kth scan initialization line GILk to connect the gate electrode of the driving transistor DT to the first initialization voltage line VIL1. Accordingly, the first initialization voltage VINT of the first initialization voltage line VIL1 may be applied to the gate electrode of the driving transistor DT. The third transistor T3 may have a gate electrode connected to the kth scan initializing line GILk, a first electrode connected to the first initializing voltage line VIL1, and a second electrode connected to the gate electrode of the driving transistor DT.

The fourth transistor T4 is turned on by a kth emission control signal of the kth emission control line EMLk to connect the first electrode of the driving transistor DT to the driving voltage line VDL to which the driving voltage ELVDD is applied. The fourth transistor T4 may have a gate electrode connected to the kth emission control line EMLk, a first electrode connected to the driving voltage line VDL, and a second electrode connected to the first electrode of the driving transistor DT.

The fifth transistor T5 is turned on by the kth emission control signal of the kth emission control line EMLk to connect the second electrode of the driving transistor DT to the anode 641 of the light emitting element EL. The fifth transistor T5 may have a gate electrode connected to the kth emission control line EMLk, a first electrode connected to the second electrode of the driving transistor DT, and a second electrode connected to the anode 641 of the light emitting element EL.

When both the fourth transistor T4 and the fifth transistor T5 are turned on, a driving current (Ids) of the driving transistor DT according to the voltage of the gate electrode of the driving transistor DT may flow to the light emitting element EL.

The sixth transistor T6 is turned on by the (k-1) th scan signal of the (k-1) th scan line GWLk-1 to connect the anode 641 of the light emitting element EL to the second initialization voltage line VIL2. The second initialization voltage vant of the second initialization voltage line VIL2 may be applied to the anode 641 of the light emitting element EL. The sixth transistor T6 may have a gate electrode connected to the (k-1) th scan line GWLk-1, a first electrode connected to the anode 641 of the light emitting element EL, and a second electrode connected to the second initialization voltage line VIL2.

The first capacitor Cst is connected between the gate electrode of the driving transistor DT and the driving voltage line VDL. The first capacitor electrode of the first capacitor Cst may be connected to the gate electrode of the driving transistor DT, and the second capacitor electrode may be connected to the driving voltage line VDL.

When the first electrode of each of the driving transistor DT and the first to sixth transistors T1 to T6 is a source electrode, the second electrode may be a drain electrode. Alternatively, when the first electrode of each of the driving transistor DT and the first to sixth transistors T1 to T6 is a drain electrode, the second electrode may be a source electrode.

The active layer of each of the driving transistor DT and the first to sixth transistors T1 to T6 may be made of any one of polysilicon, amorphous silicon, and an oxide semiconductor. For example, the active layer of each of the driving transistor DT, the first transistor T1, and the fourth to sixth transistors T4 to T6 may be made of polysilicon. The active layer of each of the second transistor T2 and the third transistor T3 may be made of an oxide semiconductor. In this case, the driving transistor DT, the first transistor T1, and the fourth to sixth transistors T4 to T6 may be formed of P-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), and the second and third transistors T2 and T3 may be formed of N-type MOSFETs.

Each of the plurality of sensor pixels PS may include a photoelectric converter PD, a plurality of sensing transistors, and various signal lines. The photoelectric converter PD includes a light sensing portion for sensing external light. The sensing transistors may include first to third sensing transistors LT1 to LT3.

Each of the photoelectric converters PD may be a light diode including a sensing anode 642 (see fig. 6), a cathode 660, and a photoelectric conversion layer 652 (see fig. 6) disposed between the sensing anode 642 and the cathode 660. Each photoelectric converter PD can convert light incident from the outside into an electrical signal. The photoelectric converter PD may be a PN-type or PIN-type inorganic photodiode or phototransistor made of an inorganic material. Alternatively, the photoelectric converter PD may be an organic light diode including an electron donor material that generates donor ions and an electron acceptor material that generates acceptor ions.

When the photoelectric converter PD is exposed to external light, it may generate photo-charges, and the generated photo-charges may be accumulated in the sensing anode 642 of the photoelectric converter PD. In this case, the voltage of the first node N1 electrically connected to the sensing anode 642 may increase. When a current path is formed by the turn-on of the first and third sensing transistors LT1 and LT3, a sensing current may flow from the second initialization voltage line VIL2 to which the second initialization voltage vant is applied to the third node N3 disposed between the q-th sensing line ropq and the third sensing transistor LT3 in proportion to the voltage of the first node N1 in which charges are accumulated.

The first sensing transistor LT1 may be turned on by a voltage applied to the first node N1 of the gate electrode thereof to connect the second initialization voltage line VIL2 to the first electrode of the third sensing transistor LT 3. The first sensing transistor LT1 may have a gate electrode connected to the first node N1, a first electrode connected to the second initialization voltage line VIL2, and a second electrode connected to the first electrode of the third sensing transistor LT 3. The first sensing transistor LT1 may be a source follower amplifier that generates a drain-source current proportional to an amount of charge of a first node N1 connected to a gate electrode of the first sensing transistor LT 1. Although the first electrode of the first sensing transistor LT1 is shown as being connected to the second initialization voltage line VIL2, the present disclosure is not limited thereto. The first electrode of the first sensing transistor LT1 may also be connected to the driving voltage line VDL or the first initialization voltage line VIL1.

The second sensing transistor LT2 may be turned on by a kth reset control signal of the kth reset control line RSTLk to connect the first node N1 to the reset voltage line VRL to which the reset voltage Vrst is applied. The second sensing transistor LT2 may have a gate electrode connected to the kth reset control line RSTLk, a first electrode connected to the reset voltage line VRL, and a second electrode connected to the first node N1.

The third sensing transistor LT3 may be turned on by a kth scan signal of the kth scan line GWLk to connect the second electrode of the first sensing transistor LT1 to the q-th readout line ROLq. The third sensing transistor LT3 may have a gate electrode connected to the kth scan line GWLk, a first electrode connected to the second electrode of the first sensing transistor LT1, and a second electrode connected to the third node N3 and the q-th readout line ROLq.

The active layer of each of the first to third sensing transistors LT1 to LT3 may be made of any one of polysilicon, amorphous silicon, and an oxide semiconductor. For example, the active layers of the first and third sensing transistors LT1 and LT3 may be made of polysilicon. The active layer of the second sensing transistor LT2 may be made of an oxide semiconductor. In this case, the first and third sensing transistors LT1 and LT3 may be formed of P-type MOSFETs, and the second sensing transistor LT2 may be formed of N-type MOSFETs.

When the light emitting element EL emits light according to an emission current, a leakage current LL may be generated between the display pixel PX and the sensor pixel PS adjacent to the display pixel PX. The leakage current LL may be a part of an emission current generated when the light emitting element EL emits light. The leakage current LL may flow to the sensing anode 642 of the photoelectric converter PD through the hole injection layer HIL (see fig. 6) and/or the hole transport layer HTL (see fig. 6) provided on the anode 641 of the light emitting element EL and the sensing anode 642 of the photoelectric converter PD. The leakage current LL may cause a decrease in sensing accuracy of the sensor pixel PS.

The mobile electronic device 1 (see fig. 1) according to the embodiment includes a partition wall SP (see fig. 6) provided around the sensor pixel PS to reduce the leakage current LL. The partition wall SP separates the hole injection layer HIL and the hole transport layer HTL provided on the anode 641 of the light emitting element EL and the sensing anode 642 of the photoelectric converter PD in the boundary region between the sensor pixel PS and the display pixel PX, thereby reducing the leakage current LL. The mobile electronic device 1 comprising the partition wall SP will now be described in more detail with reference to fig. 5 to 14.

Fig. 5 is a plan layout diagram showing an arrangement relationship between display pixels PX and sensor pixels PS of the display panel 10 according to the embodiment.

Referring to fig. 5, a plurality of display pixels PX and a plurality of sensor pixels PS may be repeatedly disposed in the display panel 10 of the mobile electronic device 1 (see fig. 1).

The display pixels PX may be arranged in a matrix form. The display pixel PX may include a first subpixel PX1, a second subpixel PX2, and a third subpixel PX3. For example, the first subpixel PX1 may emit light of a red wavelength, the second subpixel PX2 may emit light of a green wavelength, and the third subpixel PX3 may emit light of a blue wavelength.

The first and third sub-pixels PX1 and PX3 may be alternately arranged in each row along the first direction DR 1. Each sensor pixel PS may be disposed between the first subpixel PX1 and the third subpixel PX3 adjacent to each other. Accordingly, in any kth row, one of the first and third sub-pixels PX1 and PX3 and the sensor pixel PS may be alternately arranged along the first direction DR 1. For example, the first subpixel PX1, the sensor pixel PS, the third subpixel PX3, and the sensor pixel PS are arranged along the first direction DR 1. The pixel groups each including the first subpixel PX1, the sensor pixel PS, the third subpixel PX3, and the sensor pixel PS are repeatedly arranged along the first direction DR 1.

The second sub-pixels PX2 may be arranged in each of the (k-1) th and (k+1) th rows adjacent to the k-th row along the first direction DR 1. For example, the second sub-pixels PX2 are arranged in the (k-1) th and (k+1) th rows along the first direction DR 1.

The second sub-pixels PX2 arranged along the first direction DR1 in the (k-1) th and (k+1) th rows may be disposed in a direction diagonal (e.g., at 45 degrees or-45 degrees) to the direction in which the first sub-pixels PX1 are disposed in the kth row. Alternatively, the second sub-pixel PX2 may be disposed in a direction diagonally (e.g., at 45 degrees or-45 degrees) from the direction in which the third sub-pixel PX3 is disposed in the kth row. For example, a line connecting the center of the first subpixel PX1 and the center of the second subpixel PX2 disposed adjacent to each other may extend in a direction diagonal to each other (e.g., at 45 degrees or-45 degrees) in a plan view defined by the first direction DR1 and the second direction DR2 perpendicular to the first direction DR 1. In addition, a line connecting the center of the third subpixel PX3 and a line connecting the center of the second subpixel PX2 and the center of the third subpixel PX3 disposed adjacent to each other may extend in a direction diagonal to each other (e.g., at 45 degrees or-45 degrees) in a plan view defined by the first direction DR1 and the second direction DR 2.

Each of the second sub-pixels PX2 may be disposed between the sensor pixels PS adjacent to each other along the second direction DR 2. That is, the second sub-pixels PX2 and the sensor pixels PS may be alternately arranged in each column along the second direction DR 2.

The display panel 10 includes a pixel defining layer PDL separating the display pixels PX and the sensor pixels PS. The area of the display pixel PX and the area of the sensor pixel PS are defined by the opening area in the pixel defining layer PDL.

The light emitting region of the display pixel PX and the light sensing region of the sensor pixel PS may be disposed in an opening region in which the pixel defining layer PDL is removed. The opening region in which the pixel defining layer PDL is removed may correspond to a light emitting region of the display pixel PX and a light sensing region of the sensor pixel PS.

Each of the first sub-pixels PX1 includes a first light emitting layer 651a emitting red light, and the first light emitting layer 651a is disposed in the first opening region 511, which is one of the opening regions of the pixel defining layer PDL. The first light emitting layer 651a of each first subpixel PX1 may be disposed not only in the first opening area 511 but also on a portion of the pixel defining layer PDL surrounding the first opening area 511. In fig. 5, a region indicated by a broken line of each first subpixel PX1 is a region in which the first light emitting layer 651a is disposed. In fig. 5, the region indicated by the solid line inside the region indicated by the broken line of each first subpixel PX1 is the first opening region 511 corresponding to the first subpixel PX1, and is the first light-emitting region of the first subpixel PX 1.

Each of the second sub-pixels PX2 includes a second light emitting layer 651b emitting green light, and the second light emitting layer 651b is disposed in the second opening region 512, which is one of the opening regions of the pixel defining layer PDL. The second light emitting layer 651b of each second subpixel PX2 may be disposed not only in the second opening area 512, but also on a portion of the pixel defining layer PDL surrounding the second opening area 512. In fig. 5, a region indicated by a broken line of each second subpixel PX2 is a region in which the second light emitting layer 651b is disposed. In fig. 5, the region indicated by the solid line inside the region indicated by the broken line of each second subpixel PX2 is the second opening region 512 corresponding to the second subpixel PX2, and is the second light-emitting region of the second subpixel PX 2.

Each of the third sub-pixels PX3 includes a third light-emitting layer 651c that emits light of blue, and the third light-emitting layer 651c is disposed in the third opening region 513, which is one of the opening regions of the pixel defining layer PDL. The third light emitting layer 651c of each of the third sub-pixels PX3 may be disposed not only in the third opening region 513 but also on a portion of the pixel defining layer PDL surrounding the third opening region 513. In fig. 5, the region indicated by the dotted line of each third subpixel PX3 is a region in which the third light emitting layer 651c is disposed. In fig. 5, the region indicated by the solid line inside the region indicated by the broken line of each third subpixel PX3 is the third opening region 513 corresponding to the third subpixel PX3, and is the third light-emitting region of the third subpixel PX 3.

As indicated by an arrow 501 in fig. 5, a portion of the second light emitting layer 651b of each second subpixel PX2 may overlap the first light emitting layer 651a of the first subpixel PX1 adjacent to the second subpixel PX2 on the pixel defining layer PDL. As indicated by an arrow 502 in fig. 5, a portion of the second light emitting layer 651b of each second subpixel PX2 may overlap with the third light emitting layer 651c of the third subpixel PX3 adjacent to the second subpixel PX2 on the pixel defining layer PDL.

Each of the sensor pixels PS includes a photoelectric conversion layer 652, and the photoelectric conversion layer 652 is provided in the fourth opening region 514 which is one of the opening regions of the pixel defining layer PDL. The photoelectric conversion layer 652 of each sensor pixel PS may be provided not only in the fourth opening region 514 but also on a portion of the pixel defining layer PDL surrounding the fourth opening region 514. In fig. 5, a region indicated by a broken line of each sensor pixel PS is a region in which the photoelectric conversion layer 652 is provided. In fig. 5, the region indicated by the solid line within the region indicated by the broken line of each sensor pixel PS is the fourth opening region 514 corresponding to the sensor pixel PS, and is the light sensing region of the sensor pixel PS.

In a plan view, the partition wall SP may entirely surround the photoelectric conversion layer 652 of each sensor pixel PS. The partition wall SP may be a structure provided on the pixel defining layer PDL to completely surround each sensor pixel PS in a plan view. The partition wall SP may be disposed between each sensor pixel PS and the first to third sub-pixels PX1 to PX3 around the sensor pixel PS.

A part of the photoelectric conversion layer 652 and a part of the first light emitting layer 651a of each first sub-pixel PX1 are disposed on the pixel defining layer PDL, but may be spaced apart from each other in a region corresponding to the partition wall SP interposed therebetween without overlapping each other. In addition, a part of the photoelectric conversion layer 652 and a part of the second light emitting layer 651b of each second sub-pixel PX2 are disposed on the pixel defining layer PDL, but may be spaced apart from each other in a region corresponding to the partition wall SP interposed therebetween without overlapping each other. In addition, a part of the photoelectric conversion layer 652 and a part of the third light emitting layer 651c of each third sub-pixel PX3 are disposed on the pixel defining layer PDL, but may be spaced apart from each other in a region corresponding to the partition wall SP disposed therebetween without overlapping each other.

In the above description, the first, second, third, and fourth opening regions 511, 512, 513, and 514 may be regions of the pixel defining layer PDL from which the pixel defining layer PDL is removed.

The sensor pixel PS detects biometric information of a user using at least one of red light emitted from the first subpixel PX1, green light emitted from the second subpixel PX2, and blue light emitted from the third subpixel PX 3. The biometric information includes fingerprint information, iris information, blood pressure information, and blood flow information.

The arrangement of the sensor pixel PS and the display pixel PX shown in fig. 5 is merely an example, and the present disclosure is not limited thereto.

Fig. 6 is a cross-sectional view of the display panel 10 taken along line A-A' of fig. 5.

Referring to fig. 5 and 6, the display panel 10 according to the embodiment may include a substrate SUB, a thin film transistor layer TFTL disposed on the substrate SUB, a light emitting element layer (e.g., an OLED layer) including an anode 641, light emitting layers 651a to 651c, and a cathode 660 disposed on the thin film transistor layer TFTL, an encapsulation layer TFEL disposed on the light emitting element layer, a touch sensor layer TSL including a touch electrode (not shown) disposed on the encapsulation layer TFEL, a color filter layer CFL disposed on the touch sensor layer TSL, and a window WDL disposed on the color filter layer CFL. The photoelectric converter PD (see fig. 4) disposed to correspond to the sensor pixel PS may be disposed in the same plane as the light emitting element layer. Each of the photoelectric converters PD may include a sensing anode 642, a photoelectric conversion layer 652, and a cathode 660. The color filter layer CFL may include a color filter (not shown), and the color filter may be configured to transmit light of a predetermined wavelength of color. The color filter layer CFL may further include a black matrix BM.

The cross-sectional structure of the display panel 10 according to the embodiment will now be described in more detail.

The buffer layer 610 is disposed on the substrate SUB. The buffer layer 610 may include silicon nitride, silicon oxide, or silicon oxynitride.

The thin film transistor of the thin film transistor layer TFTL may be disposed on the buffer layer 610. For example, the thin film transistor layer TFTL may include at least one first thin film transistor TFT1 (see fig. 8) for driving the first subpixel PX1, at least one second thin film transistor TFT2 for driving the second subpixel PX2, at least one third thin film transistor TFT3 for driving the third subpixel PX3, and at least one sensing thin film transistor STFT for driving the photoelectric converter PD of the sensor pixel PS.

The respective semiconductor layers A1 to A4 of the thin film transistors TFT1 to TFT3 and the sensing thin film transistor STFT may be disposed on the buffer layer 610. The semiconductor layers A1 to A4 may include polysilicon. In an embodiment, the semiconductor layers A1 to A4 may include single crystal silicon, low temperature polysilicon, amorphous silicon, or an oxide semiconductor. The oxide semiconductor may include, for example, a binary semiconductor containing indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), or the like Compound (AB) _x ) Ternary compounds (AB) _x C _y ) Or quaternary compounds (AB) _x C _y D _z ). Each of the semiconductor layers A1 to A4 may include a channel region and source and drain regions doped with impurities.

The gate insulating layer 612 may be disposed on the thin film transistors TFT1 to TFT3 and the semiconductor layers A1 to A4 of the sensing thin film transistor STFT. The gate insulating layer 612 electrically insulates the semiconductor layers A1 to A4 from the gate electrodes G1 to G4 of the thin film transistors TFT1 to TFT3 and the sensing thin film transistor STFT, respectively. The gate insulating layer 612 may be made of a material such as silicon oxide (SiO) _x ) Silicon nitride (SiN) _x ) Or a metal oxide insulating material.

The respective gate electrodes G1 to G4 of the thin film transistors TFT1 to TFT3 and the sensing thin film transistor STFT are disposed on the gate insulating layer 612.

An interlayer insulating layer 622 may be disposed on the gate electrodes G1 to G4. The interlayer insulating layer 622 may include an inorganic insulating material such as silicon oxide (SiO _x ) Silicon nitride (SiN) _x ) Silicon oxynitride, hafnium oxide or aluminum oxide.

The respective source electrodes S1 to S4 and drain electrodes D1 to D4 of the thin film transistors TFT1 to TFT3 and the sensing thin film transistor STFT are disposed on the interlayer insulating layer 622. The source electrodes S1 to S4 may be electrically connected to source regions of the thin film transistors TFT1 to TFT3 and the semiconductor layers A1 to A4 of the sensing thin film transistor STFT, respectively, through contact holes formed through the interlayer insulating layer 622 and the gate insulating layer 612. The drain electrodes D1 to D4 may be electrically connected to drain regions of the thin film transistors TFT1 to TFT3 and the semiconductor layers A1 to A4 of the sensing thin film transistor STFT, respectively, through contact holes formed through the interlayer insulating layer 622 and the gate insulating layer 612.

The source electrodes S1 to S4 and the drain electrodes D1 to D4 may include one or more metals selected from the group consisting of aluminum (Al), molybdenum (Mo), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).

The planarization layer 630 is disposed on the interlayer insulating layer 622 and the source electrodes S1 to S4 and the drain electrodes D1 to D4. The planarization layer 630 may be made of an organic insulating material or the like. The planarization layer 630 may have a flat surface, and may include a contact hole exposing any one of the source electrode S1, S2, S3, or S4 and the drain electrode D1, D2, D3, or D4 of each of the thin film transistors TFT1 to TFT3 and the sensing thin film transistor STFT.

Light emitting element layers (e.g., OLED layers) including light emitting layers 651a to 651c may be disposed on the planarization layer 630. The light emitting element layer may include light emitting layers 651a to 651c provided to correspond to the display pixels PX, respectively, and a photoelectric conversion layer 652 provided to correspond to each sensor pixel PS. Specifically, an anode 641 (e.g., a pixel electrode) of each of the first to third sub-pixels PX1 to PX3 and a sensing anode 642 of each of the sensor pixels PS are disposed on the planarization layer 630.

The anode 641 may have a single-layer structure of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al) or a laminated-layer structure (for example, including Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), or indium oxide (In) ₂ O ₃ ) And ITO/Mg, ITO/MgF of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au) or nickel (Ni) ₂ Multilayer structure of ITO/Ag or ITO/Ag/ITO). The anode 641 may be electrically connected to each of the thin film transistors TFT1 to TFT3 through a contact hole formed through a portion of the planarization layer 630.

The sensing anode 642 may have a single layer structure of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al) or ITO/Mg, ITO/MgF ₂ A multilayer structure of ITO/Ag or ITO/Ag/ITO. The sensing anode 642 may be electrically connected to each sensing thin film transistor STFT through a contact hole formed through a portion of the planarization layer 630.

The pixel defining layer PDL may be disposed on the anode 641 and the sensing anode 642 on the planarization layer 630, and may be formed to separate the anode 641 and the sensing anode 642. The pixel defining layer PDL may be referred to as a "bank". The pixel defining layer PDL may cover an edge of each of the anodes 641. In addition, the pixel defining layer PDL may cover an edge of each of the sensing anodes 642.

A portion of the pixel defining layer PDL corresponding to the first subpixel PX1 is removed to form the first opening area 511. During the manufacturing process for forming the pixel defining layer PDL, the anode 641 of the first subpixel PX1 is not covered by the pixel defining layer PDL and may be exposed by the first opening region 511. The first opening region 511 basically forms a light emitting region of the first subpixel PX 1.

A portion of the pixel defining layer PDL corresponding to the second sub-pixel PX2 is removed to form a second opening area 512. During the manufacturing process for forming the pixel defining layer PDL, the anode 641 of the second subpixel PX2 is not covered by the pixel defining layer PDL and may be exposed by the second opening region 512. The second opening region 512 basically forms a light emitting region of the second subpixel PX 2.

A portion of the pixel defining layer PDL corresponding to the third sub-pixel PX3 is removed to form a third opening region 513. During the manufacturing process for forming the pixel defining layer PDL, the anode 641 of the third subpixel PX3 is not covered by the pixel defining layer PDL and may be exposed by the third opening region 513. The third opening region 513 basically forms a light emitting region of the third subpixel PX 3.

A portion of the pixel defining layer PDL corresponding to the sensor pixel PS is removed to form a fourth opening region 514. During the manufacturing process for forming the pixel defining layer PDL, the sensing anode 642 of the sensor pixel PS is not covered by the pixel defining layer PDL and may be exposed by the fourth opening region 514. The fourth opening region 514 basically forms a light sensing region of the sensor pixel PS.

The pixel defining layer PDL may be made of an organic layer containing an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

The partition wall SP is provided on the pixel defining layer PDL to surround the sensor pixel PS. The partition wall SP may be disposed on the pixel defining layer PDL to completely surround the sensor pixel PS and may be formed to have a predetermined height. The partition wall SP may be provided only in the area around the sensor pixel PS. For example, the sensor pixel PS may be disposed in only a portion (e.g., a fingerprint sensing region) of the active region AAR (see fig. 1). In this case, the partition wall SP may be provided only in the portion (e.g., the fingerprint sensing area). The partition wall SP may be made of an organic layer containing an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

The hole injection layer HIL and the hole transport layer HTL are sequentially disposed on the anode 641, the sensing anode 642, and the pixel defining layer PDL. The hole injection layer HIL and the hole transport layer HTL are commonly disposed in the first to third sub-pixels PX1 to PX3 and the sensor pixel PS. However, in the boundary region of the sensor pixel PS, the hole injection layer HIL and the hole transport layer HTL may be disconnected during the deposition process due to poor step coverage characteristics of materials used to form the hole injection layer HIL and the hole transport layer HTL. When the partition wall SP has a sufficient height to cause the materials for forming the hole injection layer HIL and the hole transport layer HTL to be broken, the hole injection layer HIL and the hole transport layer HTL may be broken at one side of the partition wall SP. That is, the hole injection layer HIL and the hole transport layer HTL of adjacent sub-pixels are connected to each other on the pixel defining layer PDL between the adjacent sub-pixels. On the other hand, the hole injection layer HIL and the hole transport layer HTL corresponding to the sensor pixel PS may have an island shape and may be separated by a partition wall SP. Therefore, they may not be connected to the hole injection layer HIL and the hole transport layer HTL provided in the adjacent subpixels. Such a discontinuous structure of the hole injection layer HIL and the hole transport layer HTL corresponding to the sensor pixel PS can block or reduce the leakage current LL (see fig. 4) passing through the hole injection layer HIL and the hole transport layer HTL. In fig. 6, an arrow 601 indicates a state in which the hole injection layer HIL and the hole transport layer HTL are separated by the partition wall SP in the boundary region of the sensor pixel PS. In fig. 6, an arrow 602 indicates a state in which the hole injection layer HIL and the hole transport layer HTL of the adjacent sub-pixels PX2 and PX3 are connected to each other on the pixel defining layer PDL between the adjacent sub-pixels PX2 and PX3 on which the partition wall SP is not provided.

The light emitting layers 651a to 651c of the first to third sub-pixels PX1 to PX3 and the photoelectric conversion layer 652 corresponding to each sensor pixel PS are disposed on the hole injection layer HIL and the hole transport layer HTL. The first light emitting layer 651a of the first subpixel PX1 may be configured to emit red light. The second light emitting layer 651b of the second subpixel PX2 may be configured to emit green light. The third light emitting layer 651c of the third subpixel PX3 may be configured to emit blue light. The light emitted from the light-emitting layers 651a to 651c can contribute to image display or serve as a light source incident on the sensor pixel PS. The photoelectric conversion layer 652 may be configured to generate a photoelectric charge in proportion to the intensity of light incident from the outside.

The photoelectric conversion layer 652 may include an electron donor material and an electron acceptor material. The electron donor material may be responsive to light to generate donor ions and the electron acceptor material may be responsive to light to generate acceptor ions. The photoelectric conversion layer 652 may be made of an organic material or an inorganic material. When the photoelectric conversion layer 652 is made of an organic material, the electron donor material may include, but is not limited to, a compound such as subphthalocyanine (SubPc) or dibutyl phosphate (DBP). The electron acceptor material may include, but is not limited to, compounds such as fullerenes, fullerene derivatives, or perylene diimides. When the photoelectric conversion layer 652 is made of an inorganic material, it may be a PN type or PIN type phototransistor. For example, the photoelectric conversion layer 652 may have a structure in which an N-type semiconductor layer, an I-type semiconductor layer, and a P-type semiconductor layer are sequentially stacked.

An electron injection layer (not shown) and an electron transport layer (not shown) may be provided on the light emitting layers 651a to 651c and the photoelectric conversion layer 652. The cathode 660 may be disposed on the electron injection layer and the electron transport layer. The cathode 660 may be a common electrode commonly disposed on the first to third sub-pixels PX1 to PX3 and the sensor pixel PS. In particular, since the material forming the cathode 660 has a step coverage characteristic better than the step coverage characteristics of the hole injection layer HIL and the hole transport layer HTL, the cathode 660 is not disconnected during the deposition process even though the partition wall SP is disposed in the boundary region of the sensor pixel PS. Accordingly, the cathodes 660 of adjacent sub-pixels may be connected to each other on the pixel defining layer PDL between adjacent sub-pixels. In addition, the cathode 660 corresponding to the sensor pixel PS may be connected to the cathode 660 of the adjacent sub-pixel on the pixel defining layer PDL and on the partition wall SP. In fig. 6, an arrow 603 indicates a state in which a cathode 660 corresponding to the sensor pixel PS is connected to the cathode 660 of the adjacent sub-pixel PX3 on the pixel defining layer PDL and on the partition wall SP.

An encapsulation layer TFEL may be disposed over the cathode 660. The encapsulation layer TFEL includes at least one inorganic layer to prevent permeation of oxygen or moisture. In addition, the encapsulation layer TFEL includes at least one organic layer to protect the light emitting element layer (e.g., OLED layer) from foreign matter such as dust.

As described above, the touch sensor layer TSL including the touch electrode (not shown), the color filter layer CFL disposed on the touch sensor layer TSL, and the window WDL disposed on the color filter layer CFL may be disposed on the encapsulation layer TFEL.

Fig. 7 is a plan view of the display panel 10 in which each partition wall includes at least one slit structure according to an embodiment. Fig. 8 is a cross-sectional view of the display panel 10 taken along line B-B' of fig. 7. Fig. 9 is a cross-sectional view of the display panel 10 taken along line C-C' of fig. 7.

The embodiments of fig. 7-9 may be similar to the embodiments of fig. 5 and 6. The following description will focus only on the differences of the embodiment of fig. 7 to 9 from the embodiment of fig. 5 and 6. Thus, the description of the features not depicted in fig. 7-9 will be replaced by the description of the embodiment of fig. 5 and 6.

The embodiment of fig. 7 to 9 is different from the embodiment of fig. 5 and 6 in that the partition walls SP1 and SP2 surrounding each sensor pixel PS include slit structures 701 and 702. The slit structures 701 and 702 refer to structures in which the partition walls SP1 and SP2 have a lower height than those in other regions or are completely removed. For example, in the embodiment of fig. 5 and 6, each of the partition walls SP has a uniform height. On the other hand, in the embodiment of fig. 7 to 9, the partition wall may have a portion having a lower height or a portion in which the partition wall is completely removed in a region between the partition walls (e.g., between the partition walls SP1 and SP 2).

According to an embodiment, the plurality of sensor pixels PS detect biometric information of the user using at least one of red light emitted from the first subpixel PX1, green light emitted from the second subpixel PX2, and blue light emitted from the third subpixel PX 3. The biometric information includes fingerprint information, iris information, blood pressure information, and blood flow information. For example, the sensor pixel PS may include a first sensor pixel PS1 configured to detect blood pressure information and/or blood flow information. The first sensor pixel PS1 may detect blood pressure information and/or blood flow information using red light emitted from the first subpixel PX1 or blue light emitted from the third subpixel PX 3.

Fig. 7 shows an example of a first sensor pixel PS1 that detects blood pressure information and/or blood flow information using red light emitted from the first subpixel PX1 or blue light emitted from the third subpixel PX3 as the sensor pixel PS.

Referring to fig. 7, a third subpixel PX3 emitting blue light is disposed in the +x direction of each first sensor pixel PS1. The first sub-pixel PX1 emitting red light is disposed in the-x direction of each first sensor pixel PS1. The second sub-pixel PX2 emitting green light is disposed in the +y direction of each of the first sensor pixels PS1. In addition, the second sub-pixel PX2 emitting green light is disposed in the-y direction of each of the first sensor pixels PS1. Here, the +x direction is the first direction DR1, and the-x direction is a direction opposite to the +x direction. In addition, the +y direction is the second direction DR2, and the-y direction is a direction opposite to the +y direction.

According to the embodiment, the partition wall SP is disposed between each of the first sensor pixel PS1 and the first, second, and third sub-pixels PX1, PX2, and PX3 to surround the first sensor pixel PS1. However, the partition wall SP may include slit structures 701 and 702. Slit structures 701 and 702 of the partition wall SP are located in regions disposed between each first sensor pixel PS1 and two second sub-pixels PX2 disposed adjacent to each first sensor pixel PS1 in +y direction and-y direction, respectively, from each first sensor pixel PS1. The slit structures 701 and 702 of the partition wall SP may have a sufficient width to minimize the leakage current LL between the first sensor pixel PS1 and the second sub-pixel PX2 disposed adjacent to the first sensor pixel PS1 when the first sub-pixel PX1 emits red light or the third sub-pixel PX3 emits blue light.

For example, each of the partition walls SP surrounding each of the first sensor pixels PS1 may be shaped like a square bracket "[" or "]. That is, the partition wall SP surrounding each first sensor pixel PS1 may include a first partition wall portion SP1 and a second partition wall portion SP2, the first partition wall portion SP1 being disposed between the first sensor pixel PS1 and the first sub-pixel PX1 located in the-x direction from the first sensor pixel PS1, and the second partition wall portion SP2 being disposed between the first sensor pixel PS1 and the third sub-pixel PX3 located in the +x direction from the first sensor pixel PS1. The first partition wall portion SP1 may be shaped like a bracket "[", and the second partition wall portion SP2 may be shaped like a bracket "].

The first and second partition wall portions SP1 and SP2 may be spaced apart from each other by a predetermined gap, and may be disposed symmetrically with each other. The gap between the first partition wall portion SP1 and the second partition wall portion SP2 forms slit structures 701 and 702. The slit structures 701 and 702 may be aligned with the center of the second subpixel PX2 emitting green light. In fig. 7, a slit structure 701 (i.e., a corresponding arrow) indicates the first slit structure 701 of the partition walls SP1 and SP2 disposed in a portion between the first sensor pixel PS1 and the second sub-pixel PX2 disposed in the (k-1) th row. In fig. 7, a slit structure 702 (i.e., a corresponding arrow) indicates a second slit structure 702 of partition walls SP1 and SP2 provided in a portion between the first sensor pixel PS1 and the second sub-pixel PX2 provided in the (k+1) th row.

Referring to arrow 801 in fig. 8, in the boundary region of the first sensor pixel PS1, since the first partition wall portion SP1 has a sufficient height to break the hole injection layer HIL and the hole transport layer HTL, the hole injection layer HIL and the hole transport layer HTL break in a region corresponding to the side surface of the first partition wall portion SP1 located between the first sensor pixel PS1 and the first subpixel PX 1. Similarly, the hole injection layer HIL and the hole transport layer HTL are broken on the side surface of the second partition wall portion SP2 located between the first sensor pixel PS1 and the third subpixel PX 3.

On the other hand, referring to arrow 802 in fig. 8, a cathode 660 corresponding to the first sensor pixel PS1 is connected to the cathode 660 of the first subpixel PX1 on the pixel defining layer PDL and on the first partition wall SP 1. This is because the cathode 660 has a step coverage characteristic that is better than the step coverage characteristics of the hole injection layer HIL and the hole transport layer HTL.

Referring to fig. 7 and 9, the slit structures 701 and 702 of each of the partition walls SP1 and SP2 are aligned with the second sub-pixels PX2 disposed in the (k-1) th row and the second sub-pixels PX2 disposed in the (k+1) th row. As shown in fig. 9, each of the partition walls SP may have a smaller height in the first slit structure 701 and the second slit structure 702 than in other regions (e.g., regions of the partition walls excluding the first slit structure 701 and the second slit structure 702). Alternatively, in the first slit structure 701 and the second slit structure 702, each of the partition walls SP1 and SP2 may be completely removed to have no height.

Since the height of each of the partition walls SP1 and SP2 is reduced in the first slit structure 701 and the second slit structure 702, the hole injection layer HIL and the hole transport layer HTL can be continuously formed on the pixel defining layer PDL without separation. Accordingly, the leakage current LL may be generated through the hole injection layer HIL and/or the hole transport layer HTL in the first and second slit structures 701 and 702. However, since the path of the leakage current LL is limited to the first slit structure 701 and the second slit structure 702, and the length of the path of the leakage current LL increases, the influence of the leakage current LL can be minimized. That is, when the first subpixel PX1 emits red light or when the third subpixel PX3 emits blue light, a leakage current LL is generated between the first subpixel PX1 and/or the third subpixel PX3 and the first sensor pixel PS 1. However, since the leakage current LL path is limited to the first slit structure 701 and the second slit structure 702 facing the second subpixel PX2, the influence thereof is reduced.

The partition wall SP may not include a slit structure as shown in fig. 7. For example, the sensor pixel PS may include a second sensor pixel configured to detect fingerprint information. The second sensor pixel may detect blood pressure information and/or blood flow information using green light emitted from the second subpixel PX 2. In this case, the partition wall SP surrounding each of the second sub-pixels PX2 may have a substantially constant height. For example, the sensor pixel PS shown in fig. 5 and 6 may be a second sensor pixel using green light, and the partition wall SP surrounding each second sensor pixel may have a substantially constant height.

According to an embodiment, in the display panel 10 including the partition wall SP, the area of each sensor pixel PS and the area of the light sensing region of each sensor pixel PS may be increased. For example, the display panel 10 may include a partition wall SP surrounding each sensor pixel PS to reduce the leakage current LL. Accordingly, in the display panel 10, the area of the light sensing region (e.g., the fourth opening region 514) corresponding to each sensor pixel PS may be increased, thereby improving sensing performance. The structure of the display panel 10 in which the area of each sensor pixel PS is increased will now be described with reference to fig. 10 to 14.

Fig. 10 is a plan view of a display panel in which at least a portion of each light sensor overlaps a pixel according to an embodiment. Fig. 11 is a cross-sectional view of the display panel taken along line D-D' of fig. 10.

The embodiment of fig. 10 and 11 may be similar to the embodiment of fig. 5 and 6. The following description will focus only on the differences of the embodiment of fig. 10 and 11 from the embodiment of fig. 5 and 6. Accordingly, the description of the features not depicted in fig. 10 and 11 will be replaced by the description of the embodiment of fig. 5 and 6.

The embodiment of fig. 10 and 11 is different from the embodiment of fig. 5 and 6 in that the area of the fourth opening region 514 corresponding to the light sensing region of each sensor pixel PS is increased, and at least a portion of the photoelectric conversion layer 652 of each sensor pixel PS overlaps with a portion of the second light emitting layer 651b of the second sub-pixel PX 2.

Referring to fig. 10 and 11, at least a portion of the photoelectric conversion layer 652 of each sensor pixel PS overlaps with a portion of the second light emitting layer 651b of the second subpixel PX 2. For example, the photoelectric conversion layer 652 of each sensor pixel PS includes a green overlap region 1002 overlapping with a portion of the second light emitting layer 651b of the second subpixel PX2, and a non-overlap region 1001 other than the green overlap region 1002. The green overlap region 1002 may overlap a portion of the second light emitting layer 651b of the second subpixel PX2 located in the (k-1) th row in the +y direction from each sensor pixel PS. In addition, the green overlap region 1002 may overlap a portion of the second light emitting layer 651b of the second subpixel PX2 located in the (k+1) th row in the-y direction from each sensor pixel PS.

At least a portion of the partition wall SP surrounding each sensor pixel PS may overlap the second light emitting layer 651b of the second subpixel PX 2. That is, the partition wall SP passes through the deposition region of the second light emitting layer 651b on the pixel defining layer PDL.

Referring to arrow 1101 in fig. 11, the second light emitting layer 651b of the second sub-pixel PX2 located on the side of the partition wall SP adjacent to the second sub-pixel PX2 (e.g., the left side of the partition wall SP in fig. 11) extends to one side of the partition wall SP along the upper surface of the pixel defining layer PDL. That is, the second light emitting layer 651b extends to a boundary portion of the partition wall SP on the side adjacent to the second subpixel PX2 on the pixel defining layer PDL.

Since the partition wall SP passes through the deposition region of the second light emitting layer 651b on the pixel defining layer PDL, a dummy organic material dm_651b formed by the same process as that of the second light emitting layer 651b is disposed on the partition wall SP. The dummy organic material dm_651b is separated from the second light emitting layer 651b disposed on one side of the partition wall SP (e.g., the left side of the partition wall SP in fig. 11).

In addition, a dummy organic material dm_651b formed by the same process as that of the second light emitting layer 651b is disposed on the pixel defining layer PDL on the other side of the partition wall SP adjacent to the sensor pixel PS (e.g., the right side of the partition wall SP in fig. 11). The dummy organic material dm_651b disposed on the other side of the partition wall SP is disconnected from the dummy organic material dm_651b disposed on the partition wall SP. In addition, the dummy organic material dm_651b disposed on the other side of the partition wall SP is disconnected from the second light emitting layer 651b disposed on one side of the partition wall SP (e.g., the left side of the partition wall SP in fig. 11). Accordingly, the dummy organic material dm_651b disposed on the other side of the partition wall SP does not substantially emit light.

Referring to the green overlap region 1002 (i.e., the corresponding arrow) in fig. 11, the dummy organic material dm_651b disposed on the other side of the partition wall SP overlaps a portion of the photoelectric conversion layer 652 of the sensor pixel PS on the pixel defining layer PDL. That is, the dummy organic material dm_651b disposed on the other side of the partition wall SP may overlap with the green overlapping region 1002 as a part of the photoelectric conversion layer 652 on the pixel defining layer PDL.

Fig. 12 is a plan view of a display panel in which at least a portion of each light sensor overlaps with the first subpixel PX1 according to an embodiment.

The embodiment of fig. 12 may be similar to the embodiments of fig. 10 and 11. The following description will focus only on the differences of the embodiment of fig. 12 from the embodiments of fig. 10 and 11. Thus, the description of the features not depicted in fig. 12 will be replaced by the description of the embodiment of fig. 10 and 11.

The embodiment of fig. 12 is different from the embodiments of fig. 10 and 11 in that at least a portion of the photoelectric conversion layer 652 of each sensor pixel PS overlaps with a portion of the first light emitting layer 651a of the first subpixel PX 1.

Referring to fig. 12, at least a portion of the photoelectric conversion layer 652 of each sensor pixel PS overlaps the first light-emitting layer 651a of the first sub-pixel PX1 on the pixel defining layer PDL. For example, the photoelectric conversion layer 652 of each sensor pixel PS includes a red overlapping region 1202 overlapping a portion of the first light emitting layer 651a of the first subpixel PX1 and a non-overlapping region 1201 other than the red overlapping region 1202. The red overlapping region 1202 may overlap a portion of the first light emitting layer 651a of the first subpixel PX1 located in the-x direction from each sensor pixel PS.

At least a portion of the partition wall SP surrounding each sensor pixel PS may overlap the first light emitting layer 651a of the first subpixel PX 1. That is, the partition wall SP passes through the deposition region of the first light emitting layer 651a on the pixel defining layer PDL.

Since the partition wall SP passes through the deposition region of the first light emitting layer 651a on the pixel defining layer PDL, a dummy organic material (not shown) formed by the same process as that of the first light emitting layer 651a is disposed on the partition wall SP. The dummy organic material is separated from the first light-emitting layer 651a of the first subpixel PX 1.

In the embodiment of fig. 12, unlike the embodiments of fig. 5 and 6, the area of the fourth opening region 514 corresponding to the light sensing region of each sensor pixel PS increases, thereby improving sensing performance.

Fig. 13 is a plan view of a display panel in which at least a portion of each light sensor overlaps with a third subpixel PX3 according to an embodiment.

The embodiment of fig. 13 may be similar to the embodiments of fig. 10 and 11. The following description will focus only on the differences of the embodiment of fig. 13 from the embodiments of fig. 10 and 11. Thus, the description of the features not depicted in fig. 13 will be replaced by the description of the embodiment of fig. 10 and 11.

The embodiment of fig. 13 is different from the embodiments of fig. 10 and 11 in that at least a portion of the photoelectric conversion layer 652 of each sensor pixel PS overlaps with a portion of the third light-emitting layer 651c of the third sub-pixel PX 3.

Referring to fig. 13, at least a portion of the photoelectric conversion layer 652 of each sensor pixel PS overlaps with a portion of the third light-emitting layer 651c of the third sub-pixel PX3 on the pixel defining layer PDL. For example, the photoelectric conversion layer 652 of each sensor pixel PS includes a blue overlapping region 1302 overlapping with a portion of the third light emitting layer 651c of the third subpixel PX3 and a non-overlapping region 1301 other than the blue overlapping region 1302. The blue overlapping region 1302 may overlap a portion of the third light emitting layer 651c of the third subpixel PX3 located in the +x direction from each sensor pixel PS.

At least a portion of the partition wall SP surrounding each sensor pixel PS may overlap the third light emitting layer 651c of the third subpixel PX 3. That is, the partition wall SP passes through the deposition region of the third light emitting layer 651c on the pixel defining layer PDL.

Since the partition wall SP passes through the deposition region of the third light emitting layer 651c on the pixel defining layer PDL, a dummy organic material (not shown) formed by the same process as that of the third light emitting layer 651c is disposed on the partition wall SP. The dummy organic material is disconnected from the third light-emitting layer 651c of the third subpixel PX 3.

In the embodiment of fig. 13, unlike the embodiments of fig. 5 and 6, the area of the fourth opening region 514 corresponding to the light sensing region of each sensor pixel PS increases, thereby improving sensing performance.

Fig. 14 is a plan view of a display panel in which at least a portion of each light sensor overlaps with the first to third sub-pixels PX1 to PX3 according to an embodiment.

The embodiment of fig. 14 may be similar to the embodiments of fig. 10 and 11. The following description will focus only on the differences of the embodiment of fig. 14 from the embodiments of fig. 10 and 11. Thus, the description of the features not depicted in fig. 14 will be replaced by the description of the embodiment of fig. 10 and 11.

The embodiment of fig. 14 is different from the embodiments of fig. 10 and 11 in that at least a part of the photoelectric conversion layer 652 of each sensor pixel PS overlaps not only the second light emitting layer 651b of the second sub-pixel PX2 but also the first light emitting layer 651a of the first sub-pixel PX1 and the third light emitting layer 651c of the third sub-pixel PX 3.

The photoelectric conversion layer 652 of each sensor pixel PS includes a red overlap region 1402 overlapping a portion of the first light-emitting layer 651a of the first subpixel PX1 on the pixel defining layer PDL.

The photoelectric conversion layer 652 of each sensor pixel PS further includes a green overlap region 1403 overlapping with a portion of the second light-emitting layer 651b of the second subpixel PX2 on the pixel defining layer PDL.

The photoelectric conversion layer 652 of each sensor pixel PS further includes a blue overlapping region 1404 overlapping with a part of the third light-emitting layer 651c of the third subpixel PX3 on the pixel defining layer PDL.

The photoelectric conversion layer 652 of each sensor pixel PS further includes a non-overlapping region 1401 other than the red overlapping region 1402, the green overlapping region 1403, and the blue overlapping region 1404.

A portion of the partition wall SP surrounding each sensor pixel PS passes through the deposition area of the first light emitting layer 651a, the deposition area of the second light emitting layer 651b, and the deposition area of the third light emitting layer 651c on the pixel defining layer PDL. A dummy organic material (not shown) formed by the same process as that of any one of the first, second, and third light emitting layers 651a, 651b, and 651c is disposed on the partition wall SP. The dummy organic material may be disconnected from the first, second, and third light-emitting layers 651a, 651b, and 651 c.

In the embodiment of fig. 14, unlike the embodiments of fig. 5 and 6, the area of the fourth opening region 514 corresponding to the light sensing region of each sensor pixel PS increases, thereby improving sensing performance.

In the display device and the mobile electronic device including the same according to the embodiments, portability and convenience may be improved by embedding the light sensor in the display panel.

In addition, the sensing performance can be improved by reducing leakage current between the photosensor and pixels adjacent to the photosensor.

However, the effects of the present disclosure are not limited to those set forth herein. The above and other effects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referencing the claims.

In summarizing the detailed description, those skilled in the art will understand that many variations and modifications may be made to the preferred embodiment without substantially departing from the principles of the present invention. Accordingly, the disclosed preferred embodiments of the invention are used in a generic and descriptive sense only and not for purposes of limitation.

Claims

1. A display device comprising a display panel, the display panel comprising a display area and a non-display area, wherein the display panel comprises:

a first subpixel including a first light emitting region;

a second subpixel including a second light emitting region;

a third subpixel including a third light emitting region;

A sensor pixel including a light sensing region;

a pixel defining layer separating the first, second, third, and light sensing regions; and

and a partition wall disposed on the pixel defining layer to completely surround the sensor pixels.

2. The display device according to claim 1, wherein the first sub-pixel includes a first light emitting layer disposed in the first light emitting region and on a portion of the pixel defining layer adjacent to the first light emitting region, the second sub-pixel includes a second light emitting layer disposed in the second light emitting region and on a portion of the pixel defining layer adjacent to the second light emitting region, the third sub-pixel includes a third light emitting layer disposed in the third light emitting region and on a portion of the pixel defining layer adjacent to the third light emitting region, and the sensor pixel includes a photoelectric conversion layer disposed in the light sensing region and on a portion of the pixel defining layer adjacent to the light sensing region.

3. The display device according to claim 1, wherein the first, second, and third sub-pixels are repeatedly arranged along first and second directions so as to be arranged in a matrix form, and the sensor pixel is disposed adjacent to the first, second, and third sub-pixels, and biometric information of a user is detected using at least one of red light emitted from the first sub-pixel, green light emitted from the second sub-pixel, and blue light emitted from the third sub-pixel.

4. The display device according to claim 3, wherein the biometric information includes fingerprint information, iris information, blood pressure information, and blood flow information.

5. The display device according to claim 4, wherein the first and third sub-pixels are alternately arranged in a kth line along the first direction, the second sub-pixel is arranged in each of a kth-1 line and a k+1 line along the first direction, and the sensor pixel is disposed between the first and third sub-pixels in the kth line, wherein k is a positive integer.

6. The display device according to claim 5, wherein the second sub-pixels and the sensor pixels are alternately arranged in columns along the second direction perpendicular to the first direction.

7. The display device according to claim 6, wherein the sensor pixel includes a first sensor pixel that detects the blood pressure information and the blood flow information using the red light emitted from the first sub-pixel and the blue light emitted from the third sub-pixel.

8. The display device according to claim 6, wherein the sensor pixel includes a second sensor pixel that detects the fingerprint information using the green light emitted from the second sub-pixel.

9. The display device according to claim 8, wherein the partition wall surrounding the second sensor pixel has a uniform height.

10. The display device according to claim 2, wherein the photoelectric conversion layer of the sensor pixel includes a green overlapping region overlapping with a part of the second light-emitting layer on the pixel defining layer and a non-overlapping region other than the green overlapping region.

11. The display device according to claim 10, wherein a portion of the partition wall passes through a deposition region of the second light emitting layer on the pixel defining layer, and a dummy organic material formed by the same process as that of the second light emitting layer is disposed on the portion of the partition wall.

12. The display device according to claim 11, wherein a cathode is provided over the dummy organic material over the partition wall, and the cathode located over the partition wall is connected to cathodes provided in the first to third light-emitting regions and the light-sensing region.

13. A mobile electronic device comprising a display panel having a light sensor embedded therein, wherein the display panel comprises:

A first subpixel including a first light emitting region;

a second subpixel including a second light emitting region;

a third subpixel including a third light emitting region;

a sensor pixel including a light sensing region;

14. The mobile electronic device of claim 13, wherein the first sub-pixel comprises a first light emitting layer disposed in the first light emitting region and on a portion of the pixel defining layer adjacent to the first light emitting region, the second sub-pixel comprises a second light emitting layer disposed in the second light emitting region and on a portion of the pixel defining layer adjacent to the second light emitting region, the third sub-pixel comprises a third light emitting layer disposed in the third light emitting region and on a portion of the pixel defining layer adjacent to the third light emitting region, and the sensor pixel comprises a photoelectric conversion layer disposed in the light sensing region and on a portion of the pixel defining layer adjacent to the light sensing region.

15. The mobile electronic device according to claim 13, wherein the first, second, and third sub-pixels are repeatedly arranged along first and second directions so as to be arranged in a matrix form, and the sensor pixel is disposed adjacent to the first, second, and third sub-pixels, and the biometric information of the user is detected using at least one of red light emitted from the first sub-pixel, green light emitted from the second sub-pixel, and blue light emitted from the third sub-pixel.

16. The mobile electronic device of claim 15, wherein the first and third sub-pixels are alternately arranged in a kth row along the first direction, the second sub-pixel is arranged in each of a kth-1 row and a k+1th row along the first direction, and the sensor pixel is disposed between the first and third sub-pixels in the kth row, wherein k is a positive integer.

17. The mobile electronic device of claim 16, wherein the sensor pixel comprises a first sensor pixel that detects blood pressure information and blood flow information using the red light emitted from the first subpixel and the blue light emitted from the third subpixel.

18. A display device comprising a display panel, the display panel comprising a display area and a non-display area, wherein the display panel comprises:

a first subpixel including a first light emitting region disposed in the kth row;

a second subpixel including a second light emitting region;

a third subpixel including a third light emitting region disposed at the kth row;

a sensor pixel including a light sensing region;

a partition wall provided on the pixel defining layer to surround the sensor pixels,

wherein the partition wall includes a first partition wall portion disposed between a portion of the photoelectric conversion layer of the sensor pixel and a portion of the first light emitting layer of the first sub-pixel on the pixel defining layer, and a second partition wall portion disposed between a portion of the photoelectric conversion layer of the sensor pixel and a portion of the third light emitting layer of the third sub-pixel on the pixel defining layer, an

Wherein a predetermined gap is provided between the first partition wall portion and the second partition wall portion to form a first slit provided between the sensor pixel and the second sub-pixel in the k-1 th row and a second slit provided between the sensor pixel and the second sub-pixel in the k+1th row, wherein k is a positive integer.

19. The display device according to claim 18, wherein the partition wall is completely removed in a region corresponding to the first slit and the second slit.

20. The display device according to claim 19, wherein the photoelectric conversion layer of the sensor pixel includes a green overlap region overlapping with a part of the second light-emitting layer of the second sub-pixel on the pixel defining layer.