CN117878218A - Apparatus for manufacturing display panel - Google Patents

Apparatus for manufacturing display panel Download PDF

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Publication number
CN117878218A
CN117878218A CN202311223840.XA CN202311223840A CN117878218A CN 117878218 A CN117878218 A CN 117878218A CN 202311223840 A CN202311223840 A CN 202311223840A CN 117878218 A CN117878218 A CN 117878218A
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CN
China
Prior art keywords
layer
module
light
pressure
loading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311223840.XA
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Chinese (zh)
Inventor
李太熙
金庆昊
徐荣奭
赵珠完
崔炳华
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Filing date
Publication date
Priority claimed from KR1020220156937A external-priority patent/KR20240050960A/en
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of CN117878218A publication Critical patent/CN117878218A/en
Pending legal-status Critical Current

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Abstract

An apparatus for manufacturing a display panel, the apparatus comprising: a loading module configured to accommodate a large-area manufacturing substrate, the loading module configured to adjust an inclination of the large-area manufacturing substrate from a rear surface of the large-area manufacturing substrate, and press the large-area manufacturing substrate; and a component transfer module configured to transfer a plurality of light emitting elements or at least one integrated circuit onto the large area manufacturing substrate, and the component transfer module is configured to bond and press a wafer on the large area manufacturing substrate, the plurality of light emitting elements or the at least one integrated circuit being located on the wafer.

Description

Apparatus for manufacturing display panel
Technical Field
Aspects of embodiments of the present disclosure relate to an apparatus for manufacturing a display panel and a method of manufacturing a display panel.
Background
With the development of multimedia technology, the importance of display devices is steadily increasing. In response to this, various types of display devices such as an Organic Light Emitting Diode (OLED) display device, a Liquid Crystal Display (LCD) device, and the like have been used.
The display device is a device for displaying an image, and includes a display panel such as a light emitting display panel or a liquid crystal display panel. Among them, the light emitting display panel may include Light Emitting Diodes (LEDs), and the light emitting diodes include Organic Light Emitting Diodes (OLEDs) using organic materials as fluorescent materials or inorganic light emitting diodes using inorganic materials as fluorescent materials.
In manufacturing a display panel using inorganic light emitting diodes as light emitting elements, a manufacturing apparatus for precisely arranging and transferring light emitting diodes such as micro LEDs onto a substrate of the display panel is required.
Disclosure of Invention
Aspects and features of embodiments of the present disclosure provide an apparatus for manufacturing a display panel capable of substantially accurately and precisely transferring light emitting diodes, and a manufacturing method of the display panel.
Aspects and features of embodiments of the present disclosure also provide an apparatus for manufacturing a display panel capable of adjusting an inclination of a display substrate from a rear surface of the display substrate by a loading module in response to an inclination of a pressing head for transferring light emitting diodes onto the display substrate, and a manufacturing method of the display panel.
However, aspects of the present disclosure are not limited to those set forth herein. The above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referencing the detailed description of the present disclosure given below.
According to one or more embodiments of the present disclosure, an apparatus for manufacturing a display panel includes: a loading module configured to accommodate a large-area manufacturing substrate, the loading module configured to adjust an inclination of the large-area manufacturing substrate from a rear surface of the large-area manufacturing substrate, and press the large-area manufacturing substrate; and a component transfer module configured to transfer a plurality of light emitting elements or at least one integrated circuit onto the large area manufacturing substrate, and the component transfer module is configured to bond and press a wafer on the large area manufacturing substrate, the plurality of light emitting elements or the at least one integrated circuit being located on the wafer.
In one or more embodiments, the component transfer module includes: a conveying member configured to fix the pressing head to a fixing portion of the conveying member in a pressing direction; a conveying drive member configured to move the conveying member and the pressing head in the pressing direction or the separating direction by a fixed frame of the conveying member; a pressure sensing module between the pressing head and the conveying member, and configured to generate a pressure detection signal according to a pressure applied to the pressing head; and an inclination setting module configured to calculate a pressing force control value for controlling the engagement pressing force of the loading module based on the magnitude of the pressure detection signal.
In one or more embodiments, the pressure sensing module is configured to: detecting the magnitude of the pressure applied to the pressing head by using a plurality of pressure sensors located at positions facing different directions; generating the pressure detection signal based on the magnitude of the pressure; and transmitting the pressure detection signal to the inclination setting module together with respective position codes for the plurality of pressure sensors using a signal transmission circuit.
In one or more embodiments, the inclination setting module is configured to: detecting a magnitude deviation of the pressure detection signal; calculating the pressing force control value of the loading module so that the magnitude deviation of the pressure detection signal is zero; and transmitting the respective position codes and the pressing force control values for the plurality of pressure sensors to the loading module.
In one or more embodiments, the plurality of pressure sensors each: is positioned at an angular position of the inner step portion according to the shape of the inner step portion and the insertion hole of the conveying member to which the pressing head is fixed; or in four axial directions of the inner step portion formed in a quadrangular shape; or in at least one polygonal shape including a triangle, pentagon or hexagon.
In one or more embodiments, the loading module includes: a flat plate divided into a plurality of blocking areas, and having a plurality of air holes in each of the plurality of blocking areas; an air supply stage having a plurality of air supply regions respectively corresponding to the plurality of blocking regions, and configured to supply air to the plurality of air holes in at least one of the plurality of blocking regions; an elastic film layer covering a front surface of the flat plate or a loading surface for loading the large-area manufacturing substrate; and a support frame having a sidewall frame having a first opening corresponding to the loading surface of the flat plate and surrounding an outer surface of the loading surface from a side surface.
In one or more embodiments, the plurality of blocking areas correspond to arrangement positions or arrangement areas of a plurality of pressure sensors in the pressure sensing module of the element transfer module, respectively.
In one or more embodiments, the plurality of blocking areas respectively correspond to arrangement positions or arrangement areas of pressure controllers in the transfer driving member of the element transfer module.
In one or more embodiments, the air supply stage includes a plurality of air ejectors configured to generate air based on the pressing force control values and respective position codes for a plurality of pressure sensors input from the inclination setting module of the component transfer module, and wherein the plurality of air ejectors are located in the plurality of air supply areas, respectively.
In one or more embodiments, the plurality of air ejectors are respectively matched with arrangement positions and position codes of the plurality of pressure sensors located in the element transfer module to generate and eject air based on the pressing force control value for each matched position code.
In one or more embodiments, the air injection intensity and the injection period of each of the plurality of air injectors are set based on the magnitude of the pressing force control value.
In one or more embodiments, the inclination setting module is configured to detect a magnitude deviation of the pressure detection signals detected by the plurality of pressure sensors and calculate the pressing force control value of the loading module such that the magnitude deviation of the pressure detection signals is zero, and wherein the plurality of air ejectors selectively eject air to each of the plurality of air supply regions based on the pressing force control value for each of the respective position codes that match the plurality of pressure sensors.
In one or more embodiments, the elastic film layer includes an elastic material selected from the group of silicone rubber, natural rubber, and synthetic rubber, or the elastic film layer includes a membrane including the elastic material.
In one or more embodiments, the outermost surface of the elastic film layer is attached to the outermost surface of the panel along the front outermost surface of the panel to seal the front surface of the panel.
In one or more embodiments, an outermost surface of the elastic film layer is attached to an outermost surface of the loading surface along the loading surface of the flat plate to seal the loading surface on which the large area manufacturing substrate is loaded.
In one or more embodiments, the support frame is located in front of the elastic film layer along an outermost surface of the elastic film layer to press the outermost surface of the elastic film layer and support a side surface of the wafer and a side surface of the large-area manufacturing substrate located on a front surface of the elastic film layer corresponding to the loading surface.
In one or more embodiments, a method of manufacturing a display panel includes: loading a large area manufacturing substrate onto a loading module; and transferring a plurality of light emitting elements or integrated circuits onto the large area manufacturing substrate by an element transfer module, the transferring the plurality of light emitting elements or the integrated circuits comprising: providing a wafer on which the plurality of light emitting elements or the integrated circuits are formed so as to face the large-area manufacturing substrate; bonding and pressing the wafer onto the front surface of the large area manufacturing substrate by the component transfer module; and adjusting an inclination of the large-area manufacturing substrate from a rear surface of the large-area manufacturing substrate by the loading module to press the large-area manufacturing substrate.
In one or more embodiments, pressing the wafer by the component transfer module includes: detecting the magnitude of the pressure applied to the pressing head of the component transfer module by a plurality of pressure sensors in a pressure sensing module; generating a pressure detection signal based on the magnitude of the pressure applied to the pressing head; and transmitting the pressure detection signal to an inclination setting module together with respective position codes for the plurality of pressure sensors by a signal transmission circuit.
In one or more embodiments, pressing the wafer by the component transfer module further comprises: detecting a magnitude deviation of the pressure detection signal by the inclination setting module; calculating a pressing force control value of the loading module so that the magnitude deviation of the pressure detection signal is zero; and transmitting respective position codes for the plurality of pressure sensors and the pressing force control value to the loading module.
In one or more embodiments, pressing the large area manufacturing substrate by the loading module includes: generating air by a plurality of air ejectors based on the position codes and the pressing force control values for the plurality of pressure sensors; supplying air through a plurality of air holes in the plate; and pressing the rear surface of the large-area manufacturing substrate in a direction facing the wafer by an elastic film layer covering the plurality of air holes on the front surface of the flat plate. According to the apparatus for manufacturing a display device according to one or more embodiments of the present disclosure, it is possible to improve manufacturing efficiency of a display panel and improve reliability by accurately and precisely arranging and transferring light emitting diodes onto a display substrate.
Further, by adjusting the inclination of the display substrate from the rear surface of the display substrate using the loading module in response to the inclination of the pressing head for transferring the light emitting diode, it is possible to reduce or minimize the transfer defect rate of the light emitting diode and reduce the manufacturing cost.
However, aspects and features of embodiments of the present disclosure are not limited to those exemplified above, and various other effects, aspects, and features are incorporated herein.
Drawings
The above and other aspects and features of the present disclosure will become more apparent by describing in detail some embodiments thereof with reference to the attached drawings in which:
FIG. 1 is a plan view of a display device according to one or more embodiments of the present disclosure;
FIG. 2 is a plan view schematically illustrating an emission area of each pixel in accordance with one or more embodiments;
FIG. 3 is a plan view schematically illustrating an emission area of each pixel in accordance with one or more embodiments;
FIG. 4 is an equivalent circuit diagram of a pixel of a display device in accordance with one or more embodiments;
FIG. 5 is an equivalent circuit diagram of a pixel of a display device in accordance with one or more embodiments;
FIG. 6 is a cross-sectional view schematically illustrating a cross-section taken along line A-A' of FIG. 2 in accordance with one or more embodiments;
Fig. 7 is an enlarged view schematically illustrating a first emission region of fig. 6;
fig. 8 is a sectional view specifically showing the light emitting element of fig. 7;
FIG. 9 is a cross-sectional view schematically illustrating a cross-section taken along line A-A' of FIG. 2 in accordance with one or more embodiments;
FIG. 10 is a cross-sectional view schematically illustrating a cross-section taken along line A-A' of FIG. 2 in accordance with one or more embodiments;
fig. 11 is a perspective view schematically illustrating an apparatus for manufacturing a display panel according to one or more embodiments;
fig. 12 is a sectional view showing a sectional structure of the component transfer module and the loading module shown in fig. 11;
fig. 13 is a sectional view showing a sectional structure of the conveying member and a fixing portion of the conveying member shown in fig. 12;
fig. 14 is a configuration diagram showing the pressing head, the conveying member, and the bottom surface of the fixed frame of fig. 12 and 13 when viewed in the upward direction;
fig. 15 is a configuration diagram showing one or more embodiments of the pressing head, the conveying member, and the bottom surface of the fixed frame of fig. 12 and 13 when viewed in an upward direction;
FIG. 16 is a configuration diagram illustrating one or more embodiments of the arrangement shape of the pressure sensing module shown in FIGS. 14 and 15;
FIG. 17 is a configuration diagram illustrating yet another embodiment or embodiments of the arrangement shape of the pressure sensing module shown in FIGS. 14 and 15;
fig. 18 is a sectional view showing a sectional structure of the loading module shown in fig. 11 and 12;
fig. 19 is an exploded perspective view illustrating the loading module of fig. 11 and 12 in detail;
FIG. 20 is a cross-sectional view showing a method of injecting air into an elastic membrane layer in an air supply region of the air supply stage shown in FIG. 19;
FIG. 21 is a cross-sectional view showing a method of bonding and pressing a large-area manufacturing substrate using an air supply table, a flat plate, and an elastic film layer of a loading module;
fig. 22 is a sectional view showing the area AA of fig. 21 in detail;
FIG. 23 is a diagram illustrating a vehicle dashboard and center dashboard including a display apparatus in accordance with one or more embodiments;
fig. 24 is a diagram illustrating a glasses-type virtual reality device including a display device in accordance with one or more embodiments;
FIG. 25 is a diagram illustrating a watch-type smart device including a display device in accordance with one or more embodiments; and
fig. 26 is a diagram illustrating a transparent display device including a display device in accordance with one or more embodiments.
Detailed Description
One or more embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the disclosure are shown. This disclosure may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It will also be understood that when a layer or substrate is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.
It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element discussed below could be termed a second element without departing from the teachings of the present disclosure. Similarly, a second element may also be named a first element.
Each of the features of the various embodiments of the present disclosure may be partially or fully combined or combined with each other, and various interlocks and drives are technically possible. Each embodiment may be implemented independently of the other or may be implemented jointly.
Hereinafter, one or more embodiments will be described in detail with reference to the accompanying drawings.
Fig. 1 is a plan view of a display device according to one or more embodiments of the present disclosure.
Referring to fig. 1, a display device 10 according to one or more embodiments may be applied to a smart phone, a mobile phone, a tablet Personal Computer (PC), a Personal Digital Assistant (PDA), a Portable Multimedia Player (PMP), a television, a game machine, a wristwatch-type electronic device, a head mounted display, a monitor of a personal computer, a laptop computer, a car navigation system, a dashboard of an automobile, a digital camera, a video camera, an external billboard, an electronic billboard, a medical device, an inspection device, various home appliances such as a refrigerator and a washing machine, and/or an internet of things device. Herein, a Television (TV) is described as an example of a display device, and the TV may have high resolution or ultra-high resolution, such as High Definition (HD), ultra-high definition (UHD), 4K, and 8K.
In addition, the display device 10 according to one or more embodiments may be classified into various types according to display methods. Examples of the display device 10 may include an organic light emitting display device, an inorganic light emitting (inorganic EL) display device, a quantum dot light emitting display (QED) device, a micro Light Emitting Diode (LED) display device, a nano LED display device, a plasma display device (PDP), a Field Emission Display (FED) device, a Cathode Ray Tube (CRT) display device, a Liquid Crystal Display (LCD) device, an electrophoretic display (EPD) device, and the like. Herein, a micro LED display device will be described as an example of the display device 10, and the micro LED display device applied to the embodiment will be referred to simply as a display device unless a special distinction is required. However, one or more embodiments are not limited to the micro LED display device, and the above or other display devices known in the art may be applied within the scope of the same technical spirit of the present disclosure.
In addition, in the drawing, a first direction DR1 indicates a horizontal direction of the display apparatus 10, a second direction DR2 indicates a vertical direction of the display apparatus 10, and a third direction DR3 indicates a thickness direction of the display apparatus 10. In this case, "left", "right", "upper" and "lower" indicate directions when the display device 10 is viewed from above. For example, "right side" indicates one side of the first direction DR1, "left side" indicates the other side of the first direction DR1, "upper side" indicates one side of the second direction DR2, and "lower side" indicates the other side of the second direction DR 2. Further, "above" indicates one side in the third direction DR3, and "below" indicates the other side in the third direction DR 3.
In a plan view, the display device 10 according to one or more embodiments may have a circular shape, an elliptical shape, or a square shape (e.g., a regular tetragonal shape). In addition, when the display device 10 is a television, it may have a rectangular shape with long sides positioned in the horizontal direction. However, the present disclosure is not limited thereto, and the long side of the display device 10 may extend in the vertical direction. In another embodiment, the display device 10 may be mounted to be rotatable such that its long sides are variably positioned to extend in a horizontal direction or a vertical direction.
The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an active area in which an image is displayed. In a plan view, the display area DPA may have a square shape similar to the overall shape of the display apparatus 10, but is not limited thereto, and may have a circular shape or an elliptical shape.
The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix. For example, a plurality of pixels PX may be arranged along rows and columns of the matrix. In a plan view, the shape of each pixel PX may be rectangular or square. However, not limited thereto, each pixel PX may have a diamond shape each side of which is inclined with respect to one side direction of the display device 10. The pixel PX may include a plurality of color pixels PX. For example, the pixels PX may include a first color pixel PX of red, a second color pixel PX of green, and a third color pixel PX of blue. The present disclosure is not limited thereto, and the plurality of pixels PX may further include a fourth color image of whiteAnd the element PX. The color pixels PX may be in stripe form or in shapeThe structures and the like are alternately arranged.The pixel arrangement may be referred to as an RGBG matrix structure (e.g.) >Matrix structure or RGBG structure (e.g.)>Structure)). />Is a registered trademark of the korean three-star display limited company.
The non-display area NDA may be disposed around the display area DPA along an edge or periphery of the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA may have various shapes such as a circular shape or a square shape. The non-display area NDA may be formed to surround the periphery of the display area DPA according to the shape of the display area DPA. The non-display area NDA may be a bezel portion of the display device 10.
In the non-display area NDA, a driving circuit or a driving element for driving the display area DPA may be provided. In one or more embodiments, in an area of the non-display area NDA disposed adjacent to a first side (e.g., a lower side in fig. 1) of the display device 10, a pad part may be provided on a display substrate of the display device 10, and an external device EXD may be mounted on a pad electrode of the pad part. Examples of the external device EXD may include a connection film, a printed circuit board, a driver integrated circuit DIC, a connector, a wiring connection film, and the like. The scan driver SDR directly formed on the display substrate of the display device 10 may be provided in an area of the non-display area NDA disposed adjacent to the second side (e.g., left side in fig. 1) of the display device 10.
Fig. 2 is a plan view schematically illustrating an emission area of each pixel in accordance with one or more embodiments.
Referring to fig. 2, a plurality of pixels PX (see fig. 1) may be arranged in a matrix form in a stripe shape, and the plurality of pixels PX may be divided into a first color pixel PX of red, a second color pixel PX of green, and a third color pixel PX of blue. In addition, the plurality of pixels PX may be divided into fourth color pixels PX further including white.
The pixel electrode of the first color pixel PX may be positioned in the first emission area EA1 of the first color pixel PX, but at least a portion of the pixel electrode of the first color pixel PX may extend to the non-emission area NEA. The pixel electrode of the second color pixel PX may be positioned in the second emission area EA2 of the second color pixel PX, but at least a portion of the pixel electrode of the second color pixel PX may extend to the non-emission area NEA. The pixel electrode of the third color pixel PX may be positioned in the third emission area EA3 of the third color pixel PX, but at least a portion of the pixel electrode of the third color pixel PX may extend to the non-emission area NEA. The pixel electrode of each pixel PX may penetrate at least one of the insulating layers to be connected to any one of the switching elements included in each pixel circuit.
The plurality of light emitting elements LE are disposed on the pixel electrode of the first emission area EA1, the pixel electrode of the second emission area EA2, and the pixel electrode of the third emission area EA 3. That is, the light emitting element LE is disposed in each of the first, second, and third emission areas EA1, EA2, and EA 3. In addition, a first color filter of red, a second color filter of green, and a third color filter of blue may be respectively disposed in the first, second, and third emission areas EA1, EA2, and EA3 in which the plurality of light emitting elements LE are disposed. The first organic layer sol may be disposed in the non-emission region NEA.
Fig. 3 is a plan view schematically illustrating an emission area of each pixel in accordance with one or more embodiments.
Referring to fig. 3, in a plan view, each pixelThe shape of the PX (see fig. 1) is not limited to a rectangular shape or a square shape, and each side of the pixel PX may have a diamond shape inclined with respect to the side direction of the display device 10 (see fig. 1) to formA matrix structure. Therefore, at +.>In each of the pixels PX of the matrix structure, the first emission area EA1 of the first color pixel PX, the second emission area EA2 of the second color pixel PX, the third emission area EA3 of the third color pixel PX, and the fourth emission area EA4 of the color pixel PX having the same color as any one of the first to third colors may be each formed in a diamond shape.
The first to fourth emission areas EA1 to EA4 of each pixel PX may be the same or different in size or planar area. Likewise, the number of light emitting elements LE provided in each of the first to fourth emission areas EA1 to EA4 may be the same or different.
Specifically, the area of the first emission area EA1, the area of the second emission area EA2, the area of the third emission area EA3, and the area of the fourth emission area EA4 may be substantially the same, but are not limited thereto and may be different from each other. The distance between the first and second emission areas EA1 and EA2 adjacent to each other, the distance between the second and third emission areas EA2 and EA3 adjacent to each other, the distance between the first and third emission areas EA1 and EA3 adjacent to each other, and the distance between the third and fourth emission areas EA3 and EA4 adjacent to each other may be substantially the same, but may be different from each other. One or more embodiments of the present disclosure are not limited thereto.
In addition, the first emission area EA1 may emit the first color light, the second emission area EA2 may emit the second color light, and the third emission area EA3 and the fourth emission area EA4 may emit the third color light, but one or more embodiments of the present disclosure are not limited thereto. For example, the first emission area EA1 may emit the second color light, the second emission area EA2 may emit the first color light, and the third emission area EA3 and the fourth emission area EA4 may emit the third color light. Alternatively, the first emission area EA1 may emit the third color light, the second emission area EA2 may emit the second color light, and the third and fourth emission areas EA3 and EA4 may emit the first color light. Alternatively, at least one of the first to fourth emission areas EA1 to EA4 may emit the fourth color light. The fourth color light may be light of a white or yellow band. For example, the dominant peak wavelength of the fourth color light may be located at approximately 550nm to 600nm, although one or more embodiments of the present disclosure are not limited thereto.
Fig. 4 is an equivalent circuit diagram of a pixel of a display device in accordance with one or more embodiments.
Referring to fig. 4, each pixel PX (see fig. 1) may include three transistors DTR, STR1 and STR2 for controlling light emission of the light emitting element LE and one capacitor CST for storage. The driving transistor DTR adjusts a current flowing from the first power supply line ELVDL to which the first power supply voltage is supplied to any one of the light emitting elements LE according to a voltage difference between the gate electrode and the source electrode. The gate electrode of the driving transistor DTR may be connected to the first electrode of the first transistor STR1, the source electrode of the driving transistor DTR may be connected to the first electrode of any one of the light emitting elements LE, and the drain electrode of the driving transistor DTR may be connected to the first power supply line ELVDL to which the first power supply voltage is applied.
The first transistor STR1 is turned on by a scan signal of the scan line SCL to connect the data line DTL to the gate electrode of the driving transistor DTR. The gate electrode of the first transistor STR1 may be connected to the scan line SCL, the first electrode of the first transistor STR1 may be connected to the gate electrode of the driving transistor DTR, and the second electrode of the first transistor STR1 may be connected to the data line DTL.
The second transistor STR2 is turned on by a sensing signal of the sensing signal line SSL to connect the initialization voltage line VIL to the source electrode of the driving transistor DTR. The gate electrode of the second transistor STR2 may be connected to the sensing signal line SSL, the first electrode of the second transistor STR2 may be connected to the initialization voltage line VIL, and the second electrode of the second transistor STR2 may be connected to the source electrode of the driving transistor DTR.
In one or more embodiments, the first electrode of each of the first and second transistors STR1 and STR2 may be a source electrode, and the second electrode of each of the first and second transistors STR1 and STR2 may be a drain electrode, but the present disclosure is not limited thereto, and vice versa.
The capacitor CST (i.e., the storage capacitor CST) is formed between the gate electrode and the source electrode of the driving transistor DTR. The storage capacitor CST stores a difference voltage between the gate voltage and the source voltage of the driving transistor DTR.
The driving transistor DTR, the first transistor STR1, and the second transistor STR2 may be formed as Thin Film Transistors (TFTs). Further, in the description of fig. 4, it is assumed that the driving transistor DTR, the first switching transistor STR1, and the second switching transistor STR2 are N-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), but the present disclosure is not limited thereto. That is, the driving transistor DTR, the first switching transistor STR1, and the second switching transistor STR2 may be P-type MOSFETs, or some of the driving transistor DTR, the first switching transistor STR1, and the second switching transistor STR2 may be N-type MOSFETs, and other transistors may be P-type MOSFETs.
The light emitting element LE may be connected between the source electrode of the driving transistor DTR and the second power line ELVSL.
Fig. 5 is an equivalent circuit diagram of a pixel of a display device in accordance with one or more embodiments.
Referring to fig. 5, each pixel PX may include a capacitor CST, and a driving transistor DTR and a plurality of switching elements for controlling light emission of the light emitting element LE. In this case, the plurality of switching elements may include a first transistor STR1, a second transistor STR2, a third transistor STR3, a fourth transistor STR4, a fifth transistor STR5, and a sixth transistor STR6.
The driving transistor DTR includes a gate electrode, a first electrode, and a second electrode. The driving transistor DTR controls a drain-source current Ids (referred to herein as "driving current") flowing between the first electrode and the second electrode according to a data voltage applied to the gate electrode.
The capacitor CST is formed between the first electrode of the driving transistor DTR and the first power line ELVDL. One electrode of the capacitor CST may be connected to the first electrode of the driving transistor DTR, and the other electrode of the capacitor CST may be connected to the first power line ELVDL.
When the first electrode of each of the driving transistor DTR and the first to sixth transistors STR1 to STR6 is a source electrode, the second electrode of each of the driving transistor DTR and the first to sixth transistors STR1 to STR6 may be a drain electrode. Alternatively, when the first electrode of each of the driving transistor DTR and the first to sixth transistors STR1 to STR6 is a drain electrode, the second electrode of each of the driving transistor DTR and the first to sixth transistors STR1 to STR6 may be a source electrode.
The driving transistor DTR, the second transistor STR2, the fourth transistor STR4, the fifth transistor STR5, and the sixth transistor STR6 may be configured as P-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), and the first and third transistors STR1 and STR3 may be configured as N-type MOSFETs. Alternatively, the first transistor STR1, the second transistor STR2, the third transistor STR3, the fourth transistor STR4, the fifth transistor STR5, the sixth transistor STR6, and the driving transistor DTR may be formed of a P-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET).
It should be noted that the equivalent circuit diagrams of the pixels according to the above-described embodiments of the present disclosure are not limited to those shown in fig. 4 and 5. In addition to the embodiments shown in fig. 4 and 5, equivalent circuit diagrams of pixels according to one or more embodiments of the present disclosure may be formed in other known circuit configurations that may be employed by those skilled in the art.
The first transistor STR1 is connected between the gate electrode and the second electrode of the driving transistor DTR. The gate electrode of the first transistor STR1 is connected to the gate control line GCL.
The second transistor STR2 is connected between the data line DTL and the first electrode of the driving transistor DTR. The gate electrode of the second transistor STR2 is connected to the gate write line GWL.
The third transistor STR3 is connected between the gate electrode of the driving transistor DTR and the initialization voltage line VIL. A gate electrode of the third transistor STR3 is connected to the gate initializing line GIL.
The fourth transistor STR4 is connected between the first electrode of the light emitting element LE and the initialization voltage line VIL. The gate electrode of the fourth transistor STR4 is connected to the gate write line GWL.
The fifth transistor STR5 is connected between the first electrode of the driving transistor DTR and the first power supply line ELVDL. The gate electrode of the fifth transistor STR5 is connected to the emission control line ELk.
The sixth transistor STR6 is connected between the second electrode of the driving transistor DTR and the first electrode of the light emitting element LE. The gate electrode of the sixth transistor STR6 is connected to the emission control line ELk.
The light emitting element LE is connected between the second electrode of the sixth transistor STR6 and the second power line ELVSL.
The capacitor Cel is connected between the first electrode and the second electrode of the light emitting element LE.
Fig. 6 is a cross-sectional view schematically illustrating a cross-section taken along line A-A' of fig. 2 in accordance with one or more embodiments. Further, fig. 7 is an enlarged view schematically showing the first emission region of fig. 6; and fig. 8 is a sectional view specifically showing the light emitting element of fig. 7.
Referring to fig. 6 to 8, the display panel of the display device 10 may include a display substrate 101 and a wavelength conversion member 201 disposed on the display substrate 101.
The barrier layer BR may be disposed on the first substrate 111 of the display substrate 101. The first substrate 111 may be formed of an insulating material such as a polymer resin. For example, the first substrate 111 may be formed of polyimide. The first substrate 111 may be a flexible substrate that may be bent, folded, or curled.
The barrier layer BR is a layer for protecting the thin film transistors T1, T2, and T3 and the light emitting element unit LEP from moisture penetrating through the first substrate 111 susceptible to moisture penetration. In an embodiment, the barrier layer BR may be formed as a plurality of inorganic layers alternately stacked. For example, the barrier layer BR may be formed of a plurality of layers in which one or more inorganic layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.
Each of the thin film transistors T1, T2, and T3 may be disposed on the barrier layer BR. The thin film transistors T1, T2, and T3 include active layers ACT1, ACT2, ACT3, gate electrodes G1, G2, G3, source electrodes S1, S2, S3, and drain electrodes D1, D2, D3, respectively.
The active layers ACT1, ACT2, ACT3, the source electrodes S1, S2, S3, and the drain electrodes D1, D2, D3 of the thin film transistors T1, T2, and T3 may be disposed on the barrier layer BR. The active layers ACT1, ACT2, ACT3 of the thin film transistors T1, T2, and T3 include polycrystalline silicon, single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, and/or an oxide semiconductor. The active layers ACT1, ACT2, ACT3 overlapping the gate electrodes G1, G2, G3 in the third direction DR3, which is the thickness direction of the first substrate 111, may be defined as channel regions. The source electrodes S1, S2, S3 and the drain electrodes D1, D2, D3, which do not overlap the gate electrodes G1, G2, G3 in the third direction DR3, may have conductivity by doping a silicon semiconductor or an oxide semiconductor with ions or impurities.
The gate insulating layer 131 may be disposed on the active layers ACT1, ACT2, ACT3, the source electrodes S1, S2, S3, and the drain electrodes D1, D2, D3 of the thin film transistors T1, T2, and T3. The gate insulating layer 131 may be formed of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and/or an aluminum oxide layer.
The gate electrodes G1, G2, G3 of the thin film transistors T1, T2, and T3 may be disposed on the gate insulating layer 131. The gate electrodes G1, G2, G3 may overlap the active layers ACT1, ACT2, ACT3 in the third direction DR 3. The gate electrodes G1, G2, G3 may be formed as a single layer or multiple layers made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and/or copper (Cu), and/or an alloy thereof.
The first interlayer insulating layer 141 may be disposed on the gate electrodes G1, G2, G3 of the thin film transistors T1, T2, and T3. The first interlayer insulating layer 141 may be formed of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and/or an aluminum oxide layer. The first interlayer insulating layer 141 may be formed of a plurality of inorganic layers.
The capacitor electrode CAE may be disposed on the first interlayer insulating layer 141. The capacitor electrode CAE may overlap the gate electrodes G1, G2, G3 of the thin film transistors T1, T2, and T3 in the third direction DR 3. Since the first interlayer insulating layer 141 has a suitable dielectric constant (e.g., a predetermined dielectric constant), the capacitor electrode CAE, the gate electrodes G1, G2, G3, and the first interlayer insulating layer 141 disposed between the capacitor electrode CAE and the gate electrodes G1, G2, G3 may form a capacitor. The capacitor electrode CAE may be formed as a single layer or multiple layers made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and/or copper (Cu), and/or an alloy thereof.
The second interlayer insulating layer 142 may be disposed on the capacitor electrode CAE. The second interlayer insulating layer 142 may be formed of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and/or an aluminum oxide layer. In an embodiment, the second interlayer insulating layer 142 may be formed of a plurality of inorganic layers.
The first anode connection electrode ADNE1 may be disposed on the second interlayer insulating layer 142. The first anode connection electrode ADNE1 may be connected to the drain electrodes D1, D2, D3 of the thin film transistors T1, T2, and T3 via the first connection contact hole ANCT1 penetrating the gate insulating layer 131, the first interlayer insulating layer 141, and the second interlayer insulating layer 142. The first anode connection electrode ADNE1 may be formed as a single layer or a plurality of layers made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and/or copper (Cu), and/or an alloy thereof.
A first planarization layer 160 for planarizing the step portion formed by the thin film transistors T1, T2, and T3 may be disposed on the first anode connection electrode ADNE1. The first planarization layer 160 may be formed of an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and/or a polyimide resin.
The second anode connection electrode ADNE2 may be disposed on the first planarization layer 160. The second anode connection electrode ADNE2 may be connected to the first anode connection electrode ADNE1 via a second connection contact hole ANCT2 penetrating the first planarization layer 160. The second anode connection electrode ADNE2 may be formed as a single layer or a plurality of layers made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and/or copper (Cu), or an alloy thereof.
The second planarization layer 180 may be disposed on the second anode connection electrode ADNE 2. The second planarization layer 180 may be formed of an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and/or a polyimide resin.
The light emitting element unit LEP may be formed on the second planarization layer 180. The light emitting element unit LEP may include a plurality of pixel electrodes PE1, PE2, and PE3, a plurality of light emitting elements LE, and a common electrode CE.
The plurality of pixel electrodes PE1, PE2, and PE3 may include a first pixel electrode PE1, a second pixel electrode PE2, and a third pixel electrode PE3. The first, second, and third pixel electrodes PE1, PE2, and PE3 may serve as the first electrode of the light emitting element LE and may be an anode electrode or a cathode electrode. The first pixel electrode PE1 may be positioned in the first emission area EA1, but at least a portion of the first pixel electrode PE1 may extend to the non-emission area NEA. The second pixel electrode PE2 may be positioned in the second emission area EA2, but at least a portion of the second pixel electrode PE2 may extend to the non-emission area NEA. The third pixel electrode PE3 may be positioned in the third emission area EA3, but at least a portion of the third pixel electrode PE3 may extend to the non-emission area NEA. The first pixel electrode PE1 may penetrate the second planarization layer 180 to be connected to the thin film transistor T1 via the second anode connection electrode ADNE2 and the first anode connection electrode ADNE1, the second pixel electrode PE2 may penetrate the second planarization layer 180 to be connected to the thin film transistor T2 via the second anode connection electrode ADNE2 and the first anode connection electrode ADNE1, and the third pixel electrode PE3 may penetrate the second planarization layer 180 to be connected to the thin film transistor T3 via the second anode connection electrode ADNE2 and the first anode connection electrode ADNE 1.
The first, second and third pixel electrodes PE1, PE2 and PE3 may be reflective electrodes. The first, second and third pixel electrodes PE1, PE2 and PE3 may be formed of titanium (Ti), copper (Cu) and/or an alloy material of titanium (Ti) and/or copper (Cu). In addition, the first, second, and third pixel electrodes PE1, PE2, and PE3 may have a stacked structure of titanium (Ti) and/or copper (Cu). In addition, the first, second, and third pixel electrodes PE1, PE2, and PE3 may be formed by including a material such as titanium oxide (TiO 2 ) An Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium Tin Zinc Oxide (ITZO), or magnesium oxide (MgO) having a high work function, and a stacked structure formed by stacking reflective material layers including such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), titanium (Ti), copper (Cu), and/or a mixture thereof. A material layer having a high work function may be disposed over the reflective material layer and disposed closer to the light emitting element LE. In an embodiment, the first, second and third pixel electrodes PE1, PE2 and PE3 may have ITO/Mg, ITO/MgF 2 The multi-layer structure of ITO/Ag and/or ITO/Ag/ITO, but is not limited thereto.
The bank BNL may be positioned on the first, second, and third pixel electrodes PE1, PE2, and PE 3. The bank BNL may include an opening exposing the first pixel electrode PE1, an opening exposing the second pixel electrode PE2, and an opening exposing the third pixel electrode PE3, and may define a first emission area EA1, a second emission area EA2, a third emission area EA3, and a non-emission area NEA. That is, the area of the first pixel electrode PE1 that is not covered by the bank BNL and is exposed may be the first emission area EA1. The area of the second pixel electrode PE2 not covered by the bank BNL and exposed may be the second emission area EA2. The area of the third pixel electrode PE3 not covered by the bank BNL and exposed may be a third emission area EA3. In addition, the region in which the bank BNL is located may be a non-emission region NEA.
The bank BNL may include an inorganic insulating material, for example, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polystyrene resin, a polyphenylene sulfide resin, and/or benzocyclobutene (BCB), etc.
In one or more embodiments, the bank BNL may not overlap the color filters CF1, CF2, and CF3, and may overlap the light blocking member BK of the wavelength converting member 201, which will be described later. In one or more embodiments, the bank BNL may completely overlap the light blocking member BK. In addition, in one or more embodiments, the bank BNL may overlap the first, second, and third color filters CF1, CF2, and CF 3.
The plurality of light emitting elements LE may be disposed on the first, second, and third pixel electrodes PE1, PE2, and PE 3.
As shown in fig. 6, 7, and 8, the light emitting element LE may be disposed in each of the first, second, and third emission areas EA1, EA2, and EA 3. The light emitting element LE may be a vertical light emitting diode element elongated in the third direction DR 3. That is, the length of the light emitting element LE in the third direction DR3 may be longer than the length of the light emitting element LE in the horizontal direction. The length in the horizontal direction means the length in the first direction DR1 or the length in the second direction DR 2. For example, the length of the light emitting element LE in the third direction DR3 may be about 1 μm to 5 μm.
The light emitting element LE may be a micro light emitting diode element. In the thickness direction (i.e., the third direction DR 3) of the display substrate 101, the light emitting element LE may include a connection electrode 125, a first semiconductor layer SEM1, an electron blocking layer EBL, an active layer MQW, a superlattice layer SLT, a second semiconductor layer SEM2, and a third semiconductor layer SEM3. The connection electrode 125, the first semiconductor layer SEM1, the electron blocking layer EBL, the active layer MQW, the superlattice layer SLT, the second semiconductor layer SEM2, and the third semiconductor layer SEM3 may be sequentially stacked in the third direction DR 3.
The light emitting element LE may have a cylindrical shape longer in width than in height, for example, a disk shape or a bar shape. However, the present disclosure is not limited thereto, and the light emitting element LE may have various shapes, such as a bar shape, a line shape, a tube shape, a polygonal column shape such as a cube, a cuboid, and a hexagonal column, or a shape extending in one direction and having a partially inclined outer surface.
The connection electrode 125 may be disposed on each of the plurality of pixel electrodes PE1, PE2, and PE 3. Hereinafter, the light emitting element LE provided on the first pixel electrode PE1 will be described as an example.
The connection electrode 125 may be positioned on the first pixel electrode PE1 to be connected to the first pixel electrode PE1 such that the light emitting element LE may receive the emission signal. The connection electrode 125 may be an ohmic connection electrode. However, the present disclosure is not limited thereto, and the connection electrode 125 may be a schottky connection electrode. The light emitting element LE may include at least one connection electrode 125. Fig. 7 and 8 illustrate that the light emitting element LE includes one connection electrode 125, but is not limited thereto. In some cases, the light emitting element LE may include a greater number of connection electrodes 125 or may not have connection electrodes 125. The following description of the light emitting element LE may be equally applied even if the number of the connection electrodes 125 is different or further includes other structures.
When the light emitting element LE is electrically connected to the first pixel electrode PE1 in the display device 10 according to one or more embodiments, the connection electrode 125 may reduce resistance and improve adhesion between the light emitting element LE and the first pixel electrode PE 1. In an embodiment, the connection electrode 125 may include a conductive metal oxide. For example, the connection electrode 125 may be ITO. In an embodiment, since the connection electrode 125 is in direct contact with the lower first pixel electrode PE1 and is connected to the lower first pixel electrode PE1, the connection electrode 125 may be made of the same material as the first pixel electrode PE 1. In addition, the connection electrode 125 may further optionally include a reflective electrode made of a metal material having high reflectivity such as aluminum (Al) and/or a diffusion barrier layer including nickel (Ni). Accordingly, the adhesion between the connection electrode 125 and the first pixel electrode PE1 may be improved, and thus the contact characteristics may be increased.
Referring to fig. 8, in one or more embodiments, the first pixel electrode PE1 may include a lower electrode layer P1, a reflective layer P2, and an upper electrode layer P3. The lower electrode layer P1 may be disposed at the lowermost portion of the first pixel electrode PE1 and may be electrically connected to the switching element. The lower electrode layer P1 may include a metal oxide, and may include, for example, titanium oxide (TiO 2 ) Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium Tin Zinc Oxide (ITZO), magnesium oxide (MgO), and the like.
The reflective layer P2 may be disposed on the lower electrode layer P1 to reflect light emitted from the light emitting element LE upward. The reflective layer P2 may include a metal having high reflectivity, and may include, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), and/or a mixture thereof.
The upper electrode layer P3 may be disposed on the reflective layer P2 and may be in direct contact with the light emitting element LE. The upper electrode layer P3 may be disposed between the reflective layer P2 and the connection electrode 125 of the light emitting element LE, and may be in direct contact with the connection electrode 125. As described above, the connection electrode 125 is made of metal oxide, and the upper electrode layer P3 may also be made of metal oxide in the same manner as the connection electrode 125.
The upper electrode layer P3 may be formed of titanium (Ti), copper (Cu), or an alloy material of titanium (Ti) and/or copper (Cu). In addition, the upper electrode layer P3 may have a stacked structure of titanium (Ti) and/or copper (Cu). In addition, the upper electrode layer P3 may include titanium oxide (TiO 2 ) Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium Tin Zinc Oxide (ITZO), and/or magnesium oxide (MgO). In one or more embodiments, when the connection electrode 125 is made of ITO, the first pixel electrode PE1 may have a multi-layer structure of ITO/Ag/ITO.
The first semiconductor layer SEM1 may be disposed on the connection electrode 125. The first semiconductor layer SEM1 may be a p-type semiconductor, and may include a semiconductor having Al x Ga y In 1-x-y N (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x+y is more than or equal to 0 and less than or equal to 1). For example, the semiconductor material may be p-doped AlGaInN, gaN, alGaN, inGaN, alNAnd/or InN. The first semiconductor layer SEM1 may be doped with a p-type dopant, and the p-type dopant may be Mg, zn, ca, ba, and/or the like. For example, the first semiconductor layer SEM1 may be p-GaN doped with p-type Mg. In an embodiment, the thickness of the first semiconductor layer SEM1 may be in the range of 30nm to 200nm, but is not limited thereto.
An electron blocking layer EBL may be disposed on the first semiconductor layer SEM 1. The electron blocking layer EBL may be a layer for suppressing or preventing excessive electron flow into the active layer MQW. For example, the electron blocking layer EBL may be p-AlGaN doped with p-type Mg. In an embodiment, the thickness of the electron blocking layer EBL may be in the range of 10nm to 50nm, but the present disclosure is not limited thereto. In addition, the electron blocking layer EBL may be omitted.
The active layer MQW may be disposed on the electron blocking layer EBL. The active layer MQW may emit light by combination (e.g., recombination) of electron-hole pairs according to an electrical signal applied through the first and second semiconductor layers SEM1 and SEM 2.
The active layer MQW may include a material having a single quantum well structure or a multiple quantum well structure. When the active layer MQW includes a material having a multi-quantum well structure, the active layer MQW may have a structure in which a plurality of well layers and barrier layers are alternately laminated. At this time, the well layer may be formed of InGaN, and the barrier layer may be formed of GaN or AlGaN, but the disclosure is not limited thereto. The thickness of the well layer may be about 1nm to 4nm, and the thickness of the barrier layer may be 3nm to 10nm.
Alternatively, the active layer MQW may have a structure in which semiconductor materials having a large energy band gap and semiconductor materials having a small energy band gap are alternately stacked, and may include other group III to group V semiconductor materials according to the wavelength band of the emitted light. The light emitted by the active layer MQW is not limited to the first light (e.g., light of red wavelength band), and in some cases, the second light (light of green wavelength band) or the third light (light of blue wavelength band) may be emitted.
Specifically, the color of light emitted from the active layer MQW may vary according to the content of indium (In). For example, the wavelength band of light emitted by the active layer MQW may be shifted to the red wavelength band as the content of indium (In) increases or becomes high, and the wavelength band of light emitted by the active layer MQW may be shifted to the blue wavelength band as the content of indium (In) decreases or becomes low.
For example, when the content of indium (In) is 35% or more, the active layer MQW may emit the first light In the red band having the main peak wavelength In the range of about 600nm to 750 nm. Alternatively, when the content of indium (In) is 25%, the active layer MQW may emit the second light In the green band having the main peak wavelength In the range of about 480nm to 560 nm. Alternatively, when the content of indium (In) is 15% or less, the active layer MQW may emit the third light In the blue band having the main peak wavelength In the range of about 370nm to 460 nm. An example in which the active layer MQW emits light in a blue band having a main peak wavelength of about 370nm to 460nm will be described with reference to fig. 6.
The superlattice layer SLT may be disposed on the active layer MQW. The superlattice layer SLT may be a layer for relieving stress between the second semiconductor layer SEM2 and the active layer MQW. For example, the superlattice layer SLT may be formed of InGaN and/or GaN. The thickness of the superlattice layer SLT may be about 50nm to 200nm. The superlattice layer SLT may be omitted.
The second semiconductor layer SEM2 may be disposed on the superlattice layer SLT. The second semiconductor layer SEM2 may be an n-type semiconductor. The second semiconductor layer SEM2 may include a semiconductor having Al x Ga y In 1-x-y N (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x+y is more than or equal to 0 and less than or equal to 1). For example, the semiconductor material may be one or more of n-doped AlGaInN, gaN, alGaN, inGaN, alN and InN. The second semiconductor layer SEM2 may be doped with an n-type dopant, and the n-type dopant may be Si, ge, se, sn, or the like. For example, the second semiconductor layer SEM2 may be n-GaN doped with n-type Si. The thickness of the second semiconductor layer SEM2 may be in the range of 2 μm to 4 μm, but the present disclosure is not limited thereto.
The third semiconductor layer SEM3 may be disposed on the second semiconductor layer SEM 2. The third semiconductor layer SEM3 may be disposed between the second semiconductor layer SEM2 and the common electrode CE. The third semiconductor layer SEM3 may be an undoped semiconductor. The third semiconductor layer SEM3 may include the same material as the second semiconductor layer SEM2, and may include a material which is not doped with an n-type dopant or a p-type dopant. In one or more embodiments, the third semiconductor layer SEM3 may be, but is not limited to, at least one of undoped InAlGaN, gaN, alGaN, inGaN, alN and InN.
The planarization layer PLL may be disposed on the bank BNL and the plurality of pixel electrodes PE1, PE2, and PE3 (see fig. 6). The planarization layer PLL may planarize a step of a lower portion so that a common electrode CE, which will be described later, may be formed. The planarization layer PLL may be formed to have a suitable height (e.g., a predetermined height) such that at least a portion (e.g., an upper portion) of the plurality of light emitting elements LE may protrude above the planarization layer PLL. That is, the height of the planarization layer PLL with respect to the top surface of the first pixel electrode PE1 may be smaller than the height of the light emitting element LE in the third direction DR 3.
The planarization layer PLL may include an organic material to planarize the lower step. For example, the planarization layer PLL may include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polystyrene resin, a polyphenylene sulfide resin, and/or benzocyclobutene (BCB), etc.
The common electrode CE may be disposed on the planarization layer PLL and the plurality of light emitting elements LE. In an embodiment, the common electrode CE may be disposed on the surface of the first substrate 111 (see fig. 6) on which the light emitting element LE is formed, and may be entirely disposed in the display area DPA (see fig. 1) and the non-display area NDA (see fig. 1). The common electrode CE is disposed to overlap each of the emission areas EA1, EA2, and EA3 (see fig. 6) in the display area DPA, and may have a thin thickness to allow light to be emitted.
The common electrode CE may be directly disposed on the top and side surfaces of the plurality of light emitting elements LE. The common electrode CE may be in direct contact with the second semiconductor layer SEM2 on the side surface of the light emitting element LE and in direct contact with the third semiconductor layer SEM3 on the top and side surfaces of the light emitting element LE. As shown in fig. 6, the common electrode CE may be a common layer covering the plurality of light emitting elements LE and provided by commonly connecting the plurality of light emitting elements LE. Since the second semiconductor layer SEM2 having conductivity has a patterned structure in each of the light emitting elements LE, the common electrode CE may be in direct contact with a side surface of the second semiconductor layer SEM2 of each of the light emitting elements LE so that a common voltage may be applied to each of the light emitting elements LE.
Since the common electrode CE is entirely disposed on the first substrate 111 and the common voltage is applied, the common electrode CE may include a material having a low resistance. In addition, the common electrode CE may be formed to have a thin thickness to allow light to pass through the common electrode CE. For example, the common electrode CE may include a material having low resistance, such as aluminum (Al), silver (Ag), and/or copper (Cu), etc. In an embodiment, the thickness of the common electrode CE may be aboutTo->But is not limited thereto.
The above-described light emitting element LE may be supplied with a pixel voltage or an anode voltage from a pixel electrode via the connection electrode 125, and may be supplied with a common voltage via the common electrode CE. The light emitting element LE may emit light having a desired luminance (e.g., a predetermined luminance) according to a voltage difference between the pixel voltage and the common voltage.
In the described embodiment, by providing a plurality of light emitting elements LE (i.e., inorganic light emitting diodes) on the pixel electrodes PE1, PE2, and PE3, the disadvantage that the organic light emitting diodes are susceptible to external moisture or oxygen can be eliminated, and the lifetime and reliability can be improved.
Referring back to fig. 6 and 7, in one or more embodiments, the first organic layer sol may be disposed on the bank BNL disposed in the non-emission region NEA.
The first organic layer sol may overlap the non-emission region NEA in the third direction DR3, and may be disposed not to overlap the emission regions EA1, EA2, and EA 3. The first organic layer sol may be directly disposed on the bank BNL, and may be disposed to be spaced apart from the plurality of adjacent pixel electrodes PE1, PE2, and PE 3. The first organic layer sol may be disposed on the entire first substrate 111, and may be disposed around the plurality of emission areas EA1, EA2, and EA3 (e.g., around the plurality of emission areas EA1, EA2, and EA 3). The first organic layer FOL may be disposed in a lattice shape as a whole.
As will be described in a manufacturing process described later, the first organic layer sol may be used to separate the plurality of light emitting elements LE in contact with the first organic layer sol in the non-emission region NEA. When irradiated with laser light, the first organic layer FOL absorbs energy and instantaneously increases its temperature to be melted. Accordingly, the plurality of light emitting elements LE contacting the top surface of the first organic layer sol may be separated from the top surface of the first organic layer sol.
The first organic layer FOL may include a polyimide-based compound. The polyimide-based compound of the first organic layer FOL may have a cyano group to absorb light (e.g., laser light) having a wavelength of 308 nm. In one or more embodiments, each of the first organic layer FOL and the bank BNL may include a polyimide-based compound, but may include a different polyimide-based compound. For example, the bank BNL may be formed of a polyimide-based compound containing no cyano group, and the first organic layer FOL may be formed of a polyimide-based compound containing cyano group. For laser light having a wavelength of 308nm, the transmittance of the first organic layer del may be less than the transmittance of the bank BNL, the transmittance of the bank BNL is about 60% or more, and the transmittance of the first organic layer del may be 0%. In addition, the absorptivity of the first organic layer del with respect to the laser light having a wavelength of 308nm may be 100%. The first organic layer FOL may have a molecular weight of about To a thickness in the range of 10 μm. When the thickness of the first organic layer FOL is +.>Or greater, the absorptivity of the laser light having a wavelength of 308nm can be improved. When the first organic layer FOL is thickWhen the degree is 10 μm or less, the difference in height between the first organic layer FOL and the pixel electrodes PE1, PE2, and PE3 can be prevented from increasing, so that the light emitting element LE can be easily adhered to the pixel electrodes PE1, PE2, and PE3 in a process to be described later.
The wavelength conversion member 201 may be disposed on the light emitting element unit LEP. In an embodiment, the wavelength conversion member 201 may include a partition wall PW, a wavelength conversion layer QDL, color filters CF1, CF2, and CF3, a light blocking member BK, and a passivation layer PTL.
The partition wall PW may be disposed on the common electrode CE of the display area DPA, and may partition the plurality of emission areas EA1, EA2, and EA2 together with the bank BNL. The partition walls PW may be disposed to extend in the first direction DR1 and the second direction DR2, and may be formed in a mesh pattern in the entire display area DPA. Further, the partition wall PW may not overlap the plurality of emission areas EA1, EA2, and EA3, and may overlap the non-emission area NEA.
The partition wall PW may include a plurality of openings OP1, OP2, and OP3 exposing the lower common electrode CE. The plurality of apertures OP1, OP2, and OP3 may include a first aperture OP1 overlapping the first emission area EA1, a second aperture OP2 overlapping the second emission area EA2, and a third aperture OP3 overlapping the third emission area EA 3. Here, the plurality of apertures OP1, OP2, and OP3 may correspond to the plurality of emission areas EA1, EA2, and EA 3. That is, the first aperture OP1 may correspond to the first emission area EA1, the second aperture OP2 may correspond to the second emission area EA2, and the third aperture OP3 may correspond to the third emission area EA 3.
The partition wall PW may be used to provide a space for the first wavelength converting layer QDL1 and the second wavelength converting layer QDL2 to be formed. For this purpose, the partition wall PW may have an appropriate thickness (e.g., a predetermined thickness). For example, the thickness of the partition wall PW may be in the range of 1 μm to 10 μm. The partition wall PW may include an organic insulating material to have a predetermined thickness. The organic insulating material may comprise, for example, an epoxy resin, an acrylic resin, a cardo (cardo) resin, or an imide resin.
The first wavelength conversion layer QDL1 may be disposed in each of the first openings OP 1. The first wavelength conversion layer QDL1 may be formed of an island pattern in the shape of dots spaced apart from each other. The first wavelength conversion layer QDL1 may include a first base resin BRS1 and first wavelength conversion particles WCP1. The first base resin BRS1 may include a light transmissive organic material. For example, the first base resin BRS1 may comprise an epoxy resin, an acrylic resin, a card-multi resin, or an imide resin. The first wavelength converting particles WCP1 may be Quantum Dots (QDs), quantum rods, fluorescent materials, or phosphorescent materials. For example, a quantum dot may be a particulate material that emits light of a particular color when an electron transitions from a conduction band to a valence band.
The quantum dots may be semiconductor nanocrystal materials. Quantum dots may have a specific band gap depending on their composition and size. Thus, the quantum dots may absorb light and then emit light having an intrinsic wavelength. Examples of the semiconductor nanocrystals of the quantum dots may include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, combinations thereof, and/or the like.
The first wavelength conversion layer QDL1 may be formed in the first opening OP1 of the first emission area EA 1. The first wavelength conversion layer QDL1 can emit light by converting or shifting the peak wavelength of the incident light to another specific peak wavelength. The first wavelength conversion layer QDL1 may convert a portion of the blue light emitted from the light emitting element LE into light similar to red light as the first light. The first wavelength conversion layer QDL1 may emit light similar to red light, and thus conversion into red light as the first light may be performed via the first color filter CF 1.
The second wavelength conversion layer QDL2 may be disposed in each of the second apertures OP 2. The second wavelength conversion layer QDL2 may be formed of an island pattern in the shape of dots spaced apart from each other. For example, the second wavelength conversion layer QDL2 may be disposed to overlap the second emission area EA 2. The second wavelength conversion layer QDL2 may include the second base resin BRS2 and the second wavelength conversion particles WCP2. The second base resin BRS2 may comprise a light transmissive organic material. Accordingly, the second wavelength conversion layer QDL2 can emit light by converting or shifting the peak wavelength of the incident light to another specific peak wavelength. The second wavelength conversion layer QDL2 may convert a part of the blue light emitted from the light emitting element LE into light similar to green light as the second light. The second wavelength conversion layer QDL2 may emit light similar to green light, and thus conversion into green light, which is second light, may be performed via the second color filter CF 2.
In the third emission area EA3, only a transparent light-transmitting organic material may be formed in the third opening OP3, so that blue light emitted from the light emitting element LE may be emitted as it is via the third color filter CF3.
A plurality of color filters CF1, CF2, and CF3 may be disposed on the partition wall PW and the first and second wavelength converting layers QDL1 and QDL 2. The plurality of color filters CF1, CF2, and CF3 may be disposed to overlap the plurality of apertures OP1, OP2, OP3 and the first and second wavelength conversion layers QDL1 and QDL 2. The plurality of color filters CF1, CF2, and CF3 may include a first color filter CF1, a second color filter CF2, and a third color filter CF3.
The first color filter CF1 may be disposed to overlap the first emission area EA 1. In addition, the first color filter CF1 may be disposed on the first aperture OP1 of the partition wall PW to overlap the first aperture OP 1. The first color filter CF1 may transmit the first light and absorb or block the second light and the third light. For example, the first color filter CF1 may transmit light of a red wavelength band and absorb or block light of other wavelength bands such as green and blue.
The second color filter CF2 may be disposed to overlap the second emission area EA 2. In addition, the second color filter CF2 may be disposed on the second aperture OP2 of the partition wall PW to overlap the second aperture OP 2. The second color filter CF2 may transmit the second light and absorb or block the first light and the third light. For example, the second color filter CF2 may transmit light of a green wavelength band and absorb or block light of other wavelength bands such as blue and red.
The third color filter CF3 may be disposed to overlap the third emission area EA 3. In addition, a third color filter CF3 may be disposed on the third aperture OP3 of the partition wall PW to overlap the third aperture OP 3. The third color filter CF3 may transmit the third light and absorb or block the first light and the second light. For example, the third color filter CF3 may transmit light of a blue wavelength band and absorb or block light of other wavelength bands such as red and green.
The planar area of each of the plurality of color filters CF1, CF2, and CF3 may be greater than the planar area of each of the plurality of emission areas EA1, EA2, and EA 3. For example, the first color filter CF1 may have a plane area larger than that of the first emission area EA 1. The second color filter CF2 may have a plane area larger than that of the second emission area EA 2. The third color filter CF3 may have a plane area larger than that of the third emission area EA 3. However, the present disclosure is not limited thereto, and the planar area of each of the plurality of color filters CF1, CF2, and CF3 may be the same as the planar area of each of the plurality of emission areas EA1, EA2, and EA 3.
Referring to fig. 6, a light blocking member BK may be provided on the partition wall PW. The light blocking member BK may overlap the non-emission region NEA to block transmission of light. Similar to the bank BNL or the partition wall PW, the light blocking member BK may be disposed substantially in a lattice shape in a plan view. The light blocking member BK may be disposed to overlap the bank BNL, the first organic layer sol, and the partition wall PW, and may not overlap the emission areas EA1, EA2, and EA 3.
In one or more embodiments, the light blocking member BK may include an organic light blocking material, and may be formed through a process of coating and exposing the organic light blocking material. The light blocking member BK may include a dye or pigment having light blocking properties, and may be a black matrix. At least a portion of the light blocking member BK may overlap with adjacent color filters CF1, CF2, and CF3, and the color filters CF1, CF2, and CF3 may be disposed on at least a portion of the light blocking member BK.
The first passivation layer PTL may be disposed on the plurality of color filters CF1, CF2, and CF3 and the light blocking member BK. The first passivation layer PTL may be disposed on an uppermost portion of the display device 10 to protect the plurality of color filters CF1, CF2, and CF3 and the light blocking member BK at a lower portion. One surface (e.g., a bottom surface) of the first passivation layer PTL may be in contact with each of the plurality of color filters CF1, CF2, and CF3 and a top surface of the light blocking member BK.
The first passivation layer PTL may include an inorganic insulating material to protect the plurality of color filters CF1, CF2, and CF3 and the light blocking member BK. For example, the first passivation layer PTL may include silicon oxide (SiO x ) Silicon nitride (SiN) x ) Silicon oxynitride (SiO) x N y ) Alumina (Al) x O y ) And/or aluminum nitride (AlN), etc., but is not limited thereto. The first passivation layer PTF1 may have a suitable thickness (e.g., a predetermined thickness), for example, a thickness in the range of 0.01 μm to 1 μm. However, the present disclosure is not limited thereto.
Fig. 9 is a cross-sectional view schematically illustrating a cross-section taken along line A-A' of fig. 2 in accordance with one or more embodiments.
Referring to fig. 9, a third wavelength conversion layer QDL3 may be disposed in each of the first and second openings OP1 and OP 2.
The third wavelength conversion layer QDL3 can emit light by converting or shifting the peak wavelength of the incident light to another specific peak wavelength. The third wavelength conversion layer QDL3 may convert a part of the blue light emitted from the light emitting element LE into yellow light as fourth light. In the third wavelength converting layer QDL3, the third light and the fourth light may be mixed to emit white light as the fifth light. The fifth light is converted into first light via the first color filter CF1 and converted into second light via the second color filter CF 2.
The third wavelength conversion layer QDL3 may be disposed in each of the first and second openings OP1 and OP2 and may be spaced apart from each other. That is, the third wavelength conversion layer QDL3 may be formed of an island pattern in the shape of dots spaced apart from each other. For example, the third wavelength conversion layer QDL3 may be disposed in each of the first aperture OP1 and the second aperture OP2 only in a one-to-one correspondence. In addition, the third wavelength conversion layer QDL3 may be disposed to overlap each of the first and second emission areas EA1 and EA 2. In one or more embodiments, each of the third wavelength conversion layers QDL3 may completely overlap the first and second emission areas EA1 and EA2, respectively.
The third wavelength conversion layer QDL3 may include a third base resin BRS3 and third wavelength conversion particles WCP3. The third base resin BRS3 may comprise a light transmissive organic material. For example, the third base resin BRS3 may comprise an epoxy resin, an acrylic resin, a card-multi resin, or an imide resin.
The third wavelength converting particles WCP3 may convert the third light incident from the light emitting element LE into the fourth light. For example, the third wavelength converting particles WCP3 may convert light of a blue wavelength band into light of a yellow wavelength band. The third wavelength converting particles WCP3 may be Quantum Dots (QDs), quantum rods, fluorescent materials, or phosphorescent materials. For example, a quantum dot may be a particulate material that emits light of a particular color when an electron transitions from a conduction band to a valence band.
As the thickness of the third wavelength converting layer QDL3 increases in the third direction DR3, the content of the third wavelength converting particles WCP3 included in the third wavelength converting layer QDL3 increases, so that the light conversion efficiency of the third wavelength converting layer QDL3 can be increased. Therefore, the thickness of the third wavelength converting layer QDL3 is preferably set in consideration of the light conversion efficiency of the third wavelength converting layer QDL 3.
In the above-described third wavelength conversion layer QDL3, a part of the third light emitted from the light emitting element LE may be converted into fourth light in the third wavelength conversion layer QDL 3. The third wavelength conversion layer QDL3 may emit white fifth light by mixing the third light and the fourth light. For the fifth light emitted from the third wavelength conversion layer QDL3, a first color filter CF1, which will be described later, may transmit only the first light, and a second color filter CF2 may transmit only the second light. Accordingly, the light emitted from the wavelength converting member 201 may be red light and green light as the first light and the second light. In the third emission area EA3, only a transparent light-transmitting organic material may be formed in the third opening OP3, so that blue light emitted from the light emitting element LE may be emitted as it is via the third color filter CF 3. Thus, full color can be produced.
Fig. 10 is a cross-sectional view schematically illustrating a cross-section taken along line A-A' of fig. 2 in accordance with one or more embodiments.
As described above, the color of light emitted from the active layer MQW (see fig. 8) of each light-emitting element LE may vary according to the content of indium (In). The wavelength band of light emitted by the active layer MQW may be shifted to the red wavelength band as the content of indium (In) increases or becomes high, and the wavelength band of light emitted by the active layer MQW may be shifted to the blue wavelength band as the content of indium (In) decreases or becomes low. Accordingly, when the content of indium (In) In the active layer MQW of each light-emitting element LE formed In the first emission region EA1 is 35% or more, the first light In the red wavelength band having the main peak wavelength In the range of about 600nm to 750nm may be emitted.
When the content of indium (In) In the active layer MQW of each light-emitting element LE formed In the second emission region EA2 is 25%, the second light In the green band having the main peak wavelength In the range of about 480nm to 560nm may be emitted.
When the content of indium (In) In the active layer MQW of each light-emitting element LE formed In the third emission region EA3 is 15% or less, the active layer MQW may emit third light In a blue band having a main peak wavelength In a range of about 370nm to 460 nm.
Each light emitting element LE formed in the first emission area EA1 may emit first light of a red wavelength band, each light emitting element LE formed in the second emission area EA2 may emit second light of a green wavelength band, and each light emitting element LE formed in the third emission area EA3 may emit third light of a blue wavelength band. In this case, the color filters CF1, CF2, and CF3 (see fig. 6) may not be formed.
Fig. 11 is a perspective view schematically illustrating an apparatus for manufacturing a display panel according to one or more embodiments.
Referring to fig. 11, an apparatus for manufacturing a display panel includes a loading module 800 and a component transfer module LBD.
The loading module 800 is formed in a polygonal flat plate shape such as a square shape or a rectangular shape, and a support frame for supporting a large-area manufacturing substrate LFP (see fig. 21) or a wafer WLP is provided on a front surface portion of the flat plate. The flat plate of the loading module 800 may be formed in a flat plate shape such as a circular shape or an oval shape according to the shape of the large-area manufacturing substrate LFP or the wafer WLP. In addition, the support frame of the loading module 800 supporting the outer surface (e.g., the outer peripheral surface or the outer circumferential surface) of the large-area manufacturing substrate LFP or the wafer WLP may also be formed in a circular shape or an oval shape, etc., according to the shape of the outer surface (e.g., the outer peripheral surface or the outer circumferential surface) of the large-area manufacturing substrate LFP or the wafer WLP. Hereinafter, an example in which the flat plate and the support frame of the loading module 800 are formed in a rectangular shape will be described.
The support frame of the loading module 800 may be formed in a shape surrounding the loading surface of the flat panel from the side surface (i.e., a sidewall frame type having the first opening 841 corresponding to the loading surface of the flat panel) and surrounding the outer surface (e.g., the outer peripheral surface or the outer circumferential surface) of the loading surface of the flat panel from the side surface. Accordingly, the large-area manufacturing substrate LFP manufactured and separated into the plurality of display panels may be loaded on the loading surface of the flat plate corresponding to the inside of the first opening 841 of the support frame.
In one or more embodiments, the elastic film layer 830 (see fig. 18) may be disposed on the loading surface of the flat plate, and the rear surface of the large-area manufacturing substrate LFP may be pressed by the elastic film layer 830 by the air pressure applied to the rear surface of the elastic film layer 830 through the flat plate.
When the large-area manufacturing substrate LFP is loaded on the loading surface of the flat plate on which the elastic film layer 830 is provided, a wafer WLP on which a plurality of light emitting elements LE (see fig. 6), at least one light emitting chip, or a circuit chip such as a microprocessor is provided may be additionally provided on the front surface of the large-area manufacturing substrate LFP.
When the large area manufacturing substrate LFP is loaded on the loading surface of the flat plate, the loading module 800 may apply heat to the rear surface of the large area manufacturing substrate LFP. To this end, the loading module 800 may include a heating member or may be directly connected to the heating member.
The component transfer module LBD is disposed toward the front surface of the loading module 800 while facing the loading module 800. In a state in which the large-area manufacturing substrate LFP and the wafer WLP are disposed to face each other inside the first opening 841 of the support frame (i.e., on the loading surface of the flat plate), the component transfer module LBD may press the rear surface of the wafer WLP. Accordingly, the element transfer module LBD may transfer the plurality of light emitting elements LE formed on the wafer WLP onto the large area manufacturing substrate LFP. Further, in a state in which the plurality of light emitting elements LE are transferred, the element transfer module LBD may irradiate laser light toward the front surface of the large-area manufacturing substrate LFP and the rear surface of the wafer WLP, so that the plurality of light emitting elements LE may be adhered to the large-area manufacturing substrate LFP. For another example, in a state in which a light emitting chip or a circuit chip such as a microprocessor or the like is arranged on the wafer WLP, the element transfer module LBD may press the rear surface of the wafer WLP to transfer the light emitting chip or the circuit chip onto the large-area manufacturing substrate LFP.
Hereinafter, the specific structures of the component transfer module LBD and the loading module 800 will be described in more detail with reference to the accompanying drawings.
Fig. 12 is a sectional view showing a sectional structure of the component transfer module and the loading module shown in fig. 11.
Referring to fig. 11 and 12, first, the component transfer module LBD includes a transfer member 100, a pressing head 200, a fixing frame 130, a transfer driving member 300, a pressure sensing module 400, an inclination setting module 500, and a laser irradiation member 700.
The transfer member 100 is formed in a polygonal tubular shape or a cylindrical shape having a second opening 110 formed in a polygonal shape such as a quadrangular shape or a circular shape, and the pressing head 200 is coupled and fixed to the fixing portion 120, the fixing portion 120 being formed in a pressing direction in which the transfer member 100 moves. Hereinafter, an example in which the conveying member 100 is formed in a quadrangular tubular shape having the quadrangular second opening 110 will be described. Further, the transfer member 100 may be disposed in a direction perpendicular to the ground, and a downward direction toward the ground may be a pressing direction of the transfer member 100. Alternatively, the upward direction opposite to the ground may be the separation direction of the transfer member 100.
The fixing portion 120 into which the pressing head 200 is inserted and fixed is formed at one end of the transfer member 100 disposed in the downward pressing direction. The insertion hole H1 into which the pressing head 200 is inserted and fixed may be formed in the fixing portion 120 of the transfer member 100, and the insertion hole H1 may be formed as a polygonal hole such as a quadrangular hole or a cylindrical hole according to the shape of an outer surface (e.g., an outer peripheral surface or an outer circumferential surface) of the pressing head 200. Accordingly, the upper surface of the pressing head 200 and the outer surface (e.g., the outer peripheral surface or the outer circumferential surface) of the pressing head 200 in the lateral direction may be inserted into the insertion hole H1 and fixed to the insertion hole H1, the insertion hole H1 being formed in the fixing portion 120 of the transfer member 100.
As shown in fig. 12, an inner diameter w1 of the insertion hole H1 into which the pressing head 200 is inserted may be formed wider than an inner diameter w2 of the second opening 110 itself of the transfer member 100. In other words, the inner width or diameter (i.e., the inner diameter w 1) of the insertion hole H1 may be formed to be wider or larger than the inner width or diameter (i.e., the inner diameter w 2) of the second opening 110 of the transfer member 100. Accordingly, a stepped portion is formed inside the fixing portion 120 due to a difference in inner diameter between the second opening 110 of the transfer member 100 and the insertion hole H1.
The pressure sensing module 400 may be disposed at an inner stepped portion of the fixed portion 120. The pressure sensing module 400 may be formed in a quadrangular ring shape or an O-ring shape corresponding to the shape and area of the inner step portion of the fixing portion 120. Alternatively, the pressure sensing module 400 may be divided into a plurality of blocks, and the plurality of blocks may be separately provided on the inner stepped surface of the fixing part 120. In a state in which the pressure sensing module 400 is disposed at the inner stepped portion of the fixing portion 120, the pressing head 200 may be inserted into the insertion hole H1 of the fixing portion 120 and fixed to the insertion hole H1 of the fixing portion 120.
The pressing head 200 is formed of a transparent member such as light-transmitting quartz or glass, and is inserted into an insertion hole H1 formed in the fixing portion 120 of the transfer member 100 and fixed to the insertion hole H1 formed in the fixing portion 120 of the transfer member 100. In particular, the transparent pressing head 200 may be formed in a hexahedral shape (such as a regular cube shape) or a cylindrical shape (such as a cylindrical shape) corresponding to the shape and size of the insertion hole H1 formed in the fixing portion 120 of the transfer member 100. As shown in fig. 12, the pressing head 200 has the same width or diameter as or corresponds to the inner width or diameter (i.e., the inner diameter w 2) of the insertion hole H1, so that the pressing head 200 is inserted into the insertion hole H1 and fixed to the insertion hole H1.
While being inserted into the fixing portion 120 of the transfer member 100, the pressing head 200 may be moved in a pressing direction (i.e., a downward direction) or may be moved in a separating direction (i.e., an upward direction), similarly to the transfer member 100. For example, the pressing head 200 made of a transparent material may move in the pressing direction similarly to the transfer member 100 and press the wafer WLP of the loading module 800 disposed in the pressing direction. The laser light applied in the downward direction (i.e., pressing direction) from the upward direction (i.e., rear surface direction) may pass through the pressing head 200 made of a transparent material and may be emitted.
The fixing frame 130 may be attached or assembled to the outer surface of the transfer member 100, or may be integrally formed with the transfer member 100. The fixing frame 130 is formed to protrude from the outer surface of the transfer member 100. The fixing frame 130 may protrude in a quadrangular shape or a hemispherical shape while surrounding the outer surface of the transfer member 100. The rear or outer surface of the fixed frame 130 is coupled to the transfer driving member 300. By the driving of the transfer driving member 300, the pressing head 200 and the transfer member 100 and the fixing frame 130 are moved in a downward pressing direction or an upward separating direction.
The transfer drive member 300 includes a flat-plate type support frame and a plurality of pneumatic or hydraulic pressure controllers coupled to the flat-plate type support frame. The transfer driving member 300 moves the pressing head 200 and the transfer member 100 and the fixing frame 130 using a plurality of pressure controllers. A plurality of pressure controllers are disposed below the planar support frame. The length of the plurality of pressure controllers is adjusted according to the change in the amount of internal air pressure or hydraulic pressure. The transfer driving member 300 may move the pressing head 200 and the transfer member 100 and the fixing frame 130 in a downward pressing direction or an upward direction that is an opposite direction of the pressing direction by changing the length of each pressure controller.
The third opening 330 corresponding to the second opening 110 of the transfer member 100 is formed in the flat plate-shaped support frame of the transfer driving member 300. The third opening 330 formed in the transfer driving member 300 and the second opening 110 of the transfer member 100 may correspond to each other and have the same shape and hole area. The shape and size of the third opening 330 of the transfer drive member 300 may correspond to the shape and size of the second opening 110 of the transfer member 100 such that the width or diameter (i.e., the inner diameter w 3) of the third opening 330 may be the same as the width or diameter (i.e., the inner diameter w 2) of the second opening 110.
The pressure sensing module 400 is disposed on a stepped surface formed inside the transfer member 100. The pressure sensing module 400 may be formed in a quadrangular ring shape or an O-ring shape corresponding to the shape and area of the inner step portion of the fixing portion 120. The pressure sensing modules 400 may be provided in the form of a plurality of blocks respectively disposed on the stepped surfaces inside the transfer member 100.
The pressure sensing module 400 includes a plurality of pressure sensors and at least one signal transmission circuit. The pressure sensing module 400 detects the magnitude of the pressure applied to the pressing head 200 using a plurality of pressure sensors, and generates a pressure detection signal based on the magnitude of the pressure applied to the pressing head 200. The pressure sensing module 400 may transmit a pressure detection signal to the inclination setting module 500 using a signal transmission circuit.
The inclination setting module 500 compares and analyzes the magnitude of the pressure detection signal of the pressure sensing module 400 to detect the horizontal inclination of the pressing head 200. Further, a pressing force control value for controlling the engagement pressing force of the loading module 800 is calculated according to the horizontal inclination of the pressing head 200. For example, the inclination setting module 500 may detect a magnitude deviation of the pressure detection signal detected by the pressure sensing module 400, and may calculate a pressing force control value of the loading module 800 required to zero the magnitude deviation of the pressure detection signal. That is, a pressing force control value for controlling the engagement pressing force of the loading module 800 required to zero the magnitude deviation of the pressure detection signal may be calculated. The inclination setting module 500 transmits the pressing force control value to the loading module 800 together with the position code of the pressure sensor that has detected the pressure detection signal in a wired or wireless manner.
The laser irradiation member 700 is disposed toward the rear surface of the conveyance driving member 300 (e.g., disposed above the conveyance driving member 300), and irradiates laser light toward the third opening 330 of the conveyance driving member 300. The laser light penetrating the third opening 330 of the transfer driving member 300 and the second opening 110 of the transfer member 100 is emitted toward the front surface of the pressing head 200 via the pressing head 200.
Fig. 13 is a sectional view showing a sectional structure of the conveying member and a fixing portion of the conveying member shown in fig. 12.
Referring to fig. 13, an inner diameter w1 of the fixing portion 120 into which the pressing head 200 of the transfer member 100 is inserted (i.e., an inner diameter w1 of the insertion hole H1 formed inside the fixing portion 120) is formed to be wider than an inner diameter w2 of the second opening 110 penetrating the inside of the transfer member 100. Accordingly, an inner stepped portion 100 (a) due to a difference in inner diameter between the second opening 110 of the transfer member 100 and the insertion hole H1 of the pressing head 200 is formed inside the fixing portion 120. A pressure sensing module 400 of a quadrangular ring type or an O-ring type is provided at the inner step portion 100 (a) of the insertion hole H1. As described above, the pressure sensing module 400 may be formed in a plurality of blocks, and the plurality of blocks may be separately provided on the surface of the inner stepped portion 100 (a) of the insertion hole H1.
In a state in which the pressure sensing module 400 is disposed on the surface of the inner stepped portion 100 (a) of the insertion hole H1, the pressing head 200 is inserted into the insertion hole H1 and fixed to the insertion hole H1 to be in contact with the pressure sensing module 400. The pressing head 200 may move in a pressing direction (i.e., a downward direction) similarly to the transfer member 100 while being inserted into the insertion hole H1 of the fixing portion 120 to press the wafer WLP of the loading module 800.
Fig. 14 is a configuration diagram showing the pressing head, the conveying member, and the bottom surface of the fixed frame of fig. 12 and 13 when viewed in the upward direction.
Referring to fig. 14, a pressure controller 310 of a transfer driving member 300 (see fig. 12) is coupled to a rear surface of the fixed frame 130 such that the pressing head 200 and the transfer member 100 and the fixed frame 130 can be moved in a vertical direction by the pressure controller 310.
The pressure controller 310 of the transfer driving member 300 may be coupled in the 2-axis, 3-axis, or 4-axis directions of the fixed frame 130, respectively. For example, four pressure controllers 310 may be coupled in 4-axis directions (i.e., x-axis, -x-axis, y-axis, and-y-axis directions) of the side surface or the rear surface of the fixed frame 130, respectively. Herein, the x-axis direction and the-x-axis direction may be the same as the first direction DR1 shown in fig. 1 and the like, and the y-axis direction and the-y-axis direction may be the same as the second direction DR2 shown in fig. 1 and the like. The lengths of the four pressure controllers 310 may be adjusted in a vertical direction (or a forward-backward direction), and the pressing head 200 and the transfer member 100 and the fixed frame 130 may be moved in the vertical direction (or the forward-backward direction) in response to a change in the length of the pressure controllers 310.
Since the inner diameter w1 (see fig. 12) of the insertion hole H1 (see fig. 12) to which the pressing head 200 is fixed is formed wider than the inner diameter w2 (see fig. 12) of the second opening 110 penetrating the inside of the transmission member 100 (see fig. 12), the quadrangular ring-shaped pressure sensing module 400 can be disposed at the inner step portion 100 (a) of the insertion hole H1.
Referring to fig. 14, the quadrangular ring-shaped pressure sensing module 400 includes a plurality of pressure sensors 410 and at least one signal transmission circuit 420.
The plurality of pressure sensors 410 are respectively provided at positions in different directions to detect the pressure applied from the pressing head 200, and generate a pressure detection signal according to the magnitude of the detected pressure.
The plurality of pressure sensors 410 may be respectively disposed in the 4-axis direction of the insertion hole H1 to which the pressing head 200 is fixed. For example, the plurality of pressure sensors 410 may be disposed in x-axis, -x-axis, y-axis, and-y-axis directions, respectively, corresponding to coupling positions of the pressure controller 310 coupled to the fixed frame 130. For example, among the plurality of pressure sensors 410, the first pressure sensor 410 (a) may be disposed in the x-axis direction of the insertion hole H1, and the second pressure sensor 410 (b) may be disposed in the y-axis direction of the insertion hole H1. In addition, the third pressure sensor 410 (c) may be disposed in the-x axis direction of the insertion hole H1, and the fourth pressure sensor 410 (d) may be disposed in the-y axis direction of the insertion hole H1.
The plurality of pressure sensors 410 (e.g., the first to fourth pressure sensors 410 (a) to 410 (d)) may be uniformly distributed to be symmetrical to or correspond to each other in different directions. As shown in fig. 14, the first to fourth pressure sensors 410 (a) to 410 (d) may be disposed at center positions of four surfaces of the quadrangular insertion hole H1, respectively. For another example, when a plurality of pressure sensors 410 are provided on each surface, the distance between the pressure sensors 410 may be the same. The pressure sensors 410 disposed on the respective surfaces may be arranged to be symmetrical in upward, downward, leftward and rightward directions or in x-axis, -x-axis, y-axis and-y-axis directions.
In addition, the number and arrangement positions of the plurality of pressure sensors 410 are not limited to those shown in fig. 14, and two or more pressure sensors 410 may be provided in two or more axial directions to be provided in an axial direction of a straight line or a polygon such as a triangle, a quadrangle, a pentagon, or a hexagon. Alternatively, the plurality of pressure sensors 410 may be arranged in a polygonal shape such as a triangle, a quadrangle, a pentagon, or a hexagon.
The at least one signal transmission circuit 420 transmits the pressure detection signals generated by the plurality of pressure sensors 410 to the inclination setting module 500 (see fig. 12).
The at least one signal transmission circuit 420 receives pressure detection signals from the plurality of pressure sensors 410 in real time and transmits the pressure detection signals according to the pressure magnitude to the inclination setting module 500 together with the position code for each pressure sensor 410. To this end, the at least one signal transmission circuit 420 may further include a short-range interface communication circuit for transmitting the pressure detection signal in a wired or wireless manner.
Fig. 15 is a configuration diagram showing an embodiment of the pressing head, the conveying member, and the bottom surface of the fixed frame of fig. 12 and 13 when viewed from the upward direction.
Referring to fig. 15, a plurality of pressure sensors 410 may be disposed at corner positions of the inner step portion 100 (a) according to the shapes of the inner step portion 100 (a) and the insertion hole H1 (see fig. 12) to which the pressing head 200 is fixed. For example, the plurality of pressure sensors 410 may be provided at four direction corner positions of the inner step portion 100 (a) formed in a quadrangular shape, respectively. In other words, among the plurality of pressure sensors 410, the first pressure sensor 410 (a) may be disposed at a first direction angular position of the inner step portion 100 (a), and the second pressure sensor 410 (b) may be disposed at a second direction angular position of the inner step portion 100 (a). Further, the third pressure sensor 410 (c) may be disposed at a third directional corner position of the inner step portion 100 (a), and the fourth pressure sensor 410 (d) may be disposed at a fourth directional corner position of the inner step portion 100 (a).
The number and arrangement positions of the plurality of pressure sensors 410 are not limited to those shown in fig. 15, and two or more pressure sensors 410 may be arranged in a polygonal shape such as a triangle, a quadrangle, a pentagon, a hexagon, or the like. The pressure sensors 410 may be arranged in a polygonal shape such that the same gap is maintained between the pressure sensors 410.
At least one signal transmission circuit 420 is provided at a position adjacent to any one of the pressure sensors 410, and receives a pressure detection signal from each of the pressure sensors 410. For example, the signal transmission circuit 420 is electrically connected to the pressure sensor 410 via a wiring formed inside the quadrangular ring-shaped pressure sensing module 400 or a wiring formed at the inner step portion 100 (a) of the insertion hole H1. The signal transmission circuit 420 receives pressure detection signals from the plurality of pressure sensors 410 in real time, and transmits the pressure detection signals according to the magnitude of the pressure to the inclination setting module 500 together with the directional position code for each pressure sensor 410 (see fig. 12). To this end, the at least one signal transmission circuit 420 may further include a short-range interface communication circuit for transmitting the pressure detection signal in a wired or wireless manner.
Fig. 16 is a configuration diagram showing an embodiment of the arrangement shape of the pressure sensing module shown in fig. 14 and 15. Further, fig. 17 is a configuration diagram showing an embodiment of the arrangement shape of the pressure sensing module shown in fig. 14 and 15.
As shown in fig. 16 and 17, the pressure sensing module 400 may be formed in an O-ring shape to correspond to the shape and area of the inner stepped portion 100 (a) (see fig. 13) of the fixing portion 120 (see fig. 13). The plurality of pressure sensors 410 included in the O-ring type pressure sensing module 400 may be arranged in an axial direction of a polygon such as a pentagon or the like other than a triangle and a quadrangle.
For example, the pressure controller 310 (see fig. 14) of the transfer driving member 300 (see fig. 12) may be arranged in an axial direction of a polygon such as a pentagon or a hexagon other than a triangle and a quadrangle, and coupled to the rear surface of the fixing frame 130 (see fig. 12). Accordingly, the plurality of pressure sensors 410 may be arranged in the axial direction of a polygon such as a pentagon or a hexagon to correspond to the polygonal axial direction of the insertion hole H1 (see fig. 12) to which the pressing head 200 (see fig. 12) is fixed.
The plurality of pressure sensors 410 disposed in the circular or polygonal axial direction may be disposed such that the same gap is maintained between adjacent pressure sensors 410. Further, the plurality of pressure sensors 410 disposed in the circular or polygonal axial direction may be disposed such that distances from a center point of the circular or polygonal shape to a center point of the plurality of pressure sensors 410 are equal. Even in this case, the pressure sensors 410 may be arranged such that the same gap is maintained between the pressure sensors 410.
The plurality of pressure sensors 410 arranged in the circular or polygonal axial direction may be arranged to be symmetrical to each other with respect to a center point of the circular or polygonal shape. Further, the plurality of pressure sensors 410 may be arranged to face each other with respect to a center point of a circular or polygonal shape.
Similarly, at least one signal transmission circuit 420 provided adjacent to any one of the pressure sensors 410 transmits the pressure detection signals from the plurality of pressure sensors 410 to the inclination setting module 500 together with the arrangement position code for each of the pressure sensors 410 (see fig. 12).
Fig. 18 is a sectional view showing a sectional structure of the loading module shown in fig. 11 and 12. Further, fig. 19 is an exploded perspective view showing the loading module of fig. 11 and 12 in detail.
Referring to fig. 18 and 19, the loading module 800 includes an air supply table 810, a flat plate 820, an elastic membrane layer 830, and a support frame 840.
The flat plate 820 is divided into a plurality of barrier regions BDn, and a plurality of air holes 821 are formed in each barrier region BDn. A plurality of air holes 821 are formed through the front and rear surfaces of the flat plate 820. Air generated from the rear surface of the flat plate 820 by the air supply table 810 is sprayed toward the front surface of the flat plate 820 via the plurality of air holes 821.
The plurality of blocking areas BDn may correspond to arrangement positions or arrangement areas of the pressure sensors 410 (see fig. 14) formed at the pressure sensing module 400 (see fig. 12) of the component transfer module LBD (see fig. 12), respectively. Further, the plurality of barrier regions BDn may correspond to arrangement positions or arrangement regions of the pressure controller 310 (see fig. 14) formed at the transfer driving member 300 (see fig. 12) of the component transfer module LBD, respectively.
The air supply stage 810 is disposed on the rear surface side of the flat plate 820. Accordingly, the air supplied from the air supply stage 810 is sprayed toward the front surface of the flat plate 820 via the plurality of air holes 821 formed in the blocking region BDn.
The air supply stage 810 includes a plurality of air supply areas DBn corresponding to the plurality of blocking areas BDn of the flat plate 820, respectively.
The air supply stage 810 further includes a plurality of air ejectors 811, the plurality of air ejectors 811 generating air according to the position code and the pressing force control value of the pressure sensor 410 input from the inclination setting module 500 (see fig. 12) of the component transfer module LBD. Here, a plurality of air injectors 811 are provided in the plurality of air supply areas DBn, respectively.
The air injectors 811 provided in the air supply area DBn of the air supply stage 810 may be matched with the position and position code of the pressure sensor 410, respectively, to generate and inject air based on the pressing force control value for each matched position code. In other words, the air injection intensity and the injection period of the air injector 811 may be preset based on the magnitude of the pressing force control value.
As described above, the inclination setting module 500 of the component transfer module LBD detects the magnitude deviation of the pressure detection signal detected by the pressure sensor 410, and calculates the pressing force control value for controlling the engagement pressing force of the loading module 800 required to zero the magnitude deviation of the pressure detection signal. Accordingly, the air injector 811 provided in the air supply area DBn may selectively generate air based on the pressing force control value for each matched position code and inject the air to the air supply area DBn.
The elastic film layer 830 is provided to cover the front surface of the flat plate 820 or the loading surface of the large-area manufacturing substrate. The elastic membrane layer 830 may be made of an elastic material such as silicone rubber, natural rubber, and/or synthetic rubber, or may be formed of a diaphragm made of an elastic material such as silicone rubber, natural rubber, or synthetic rubber.
The outermost surface of the elastic film layer 830 may be attached to the outermost surface of the plate 820 along the front outermost surface of the plate 820. Alternatively, the outermost surface of the elastic film layer 830 may be attached to the outermost surface of the loading surface along the loading surface of the large-area manufacturing substrate. Thus, the elastic film layer 830 may seal the front surface of the flat plate 820 or the loading surface of the large area manufacturing substrate.
The support frame 840 is formed of a sidewall frame type having a first opening 841 corresponding to the loading surface of the flat plate 820 and surrounding an outer surface (e.g., an outer peripheral surface or an outer circumferential surface) of the loading surface of the flat plate 820 from a side surface. The support frame 840 is disposed on the front surface of the elastic membrane layer 830 to press the outermost surface of the elastic membrane layer 830. A large-area manufacturing substrate manufactured and separated into a plurality of display panels may be loaded on the loading surface of the flat plate 820 corresponding to the inside of the first opening 841 of the support frame 840, i.e., on the front surface of the elastic film layer 830.
When a large-area manufacturing substrate is loaded on the front surface of the elastic film layer 830, a wafer WLP (see fig. 11) on which a plurality of light emitting elements LE (see fig. 6), at least one light emitting chip, or a circuit chip such as a microprocessor, etc. are disposed may be additionally disposed on the front surface of the large-area manufacturing substrate.
Fig. 20 is a sectional view showing a method of injecting air into the elastic film layer in the air supply region of the air supply stage shown in fig. 19.
Referring to fig. 20, the inclination setting module 500 (see fig. 12) detects the magnitude deviation of the pressure detection signal detected by the pressure sensing module 400 (see fig. 12) in real time, and calculates a pressing force control value of the loading module 800 (see fig. 12) required to zero the magnitude deviation of the pressure detection signal. Further, the inclination setting module 500 transmits a position code and a pressing force control value matched with the position code of the pressure sensor 410 (see fig. 14) to the air injector 811.
The air injector 811 provided in the air supply area DBn of the air supply stage 810 generates and injects air based on the pressing force control value for each position code. As indicated by the arrow, the air injector 811 may selectively generate and inject air based on the input pressing force control value. As described above, the air injection intensity and the injection period of the air injector 811 may be preset according to the magnitude of the pressing force control value.
Fig. 21 is a cross-sectional view illustrating a method of bonding and pressing a large-area manufacturing substrate using an air supply table, a flat plate, and an elastic film layer of a loading module. Further, fig. 22 is a sectional view showing the area AA of fig. 21 in detail.
Referring to fig. 21 and 22, when the large-area manufacturing substrate LFP is loaded onto the front surface of the elastic film layer 830 corresponding to the inside of the first opening 841 of the support frame 840, the wafer WLP on which the plurality of light emitting elements LE are disposed may be additionally disposed on the front surface of the large-area manufacturing substrate LFP.
The transfer driving member 300 (see fig. 12) moves the transfer member 100 (see fig. 12) and the pressing head 200 to press the rear surface of the wafer WLP using the pressing head 200.
The inclination setting module 500 (see fig. 12) analyzes the pressure detection signal detected by the pressure sensor 410 (see fig. 14) in real time to calculate the pressing force control value of the loading module 800 (see fig. 12). In addition, the inclination setting module 500 transmits the respective pressing force control values to the respective air ejectors 811 matched to the position codes of the pressure sensors 410.
The air injector 811 provided in the air supply area DBn of the air supply stage 810 generates and injects air based on the pressing force control value for each position code. Accordingly, the air injector 811 may selectively generate and inject air based on the input pressing force control value.
As indicated by arrows, air generated from the rear surface of the flat plate 820 by the air injector 811 for each air supply area DBn is injected toward the front surface of the flat plate 820 via the plurality of air holes 821.
The elastic film layer 830 is inflated by the air pressure applied to the rear surface of the elastic film layer 830 through the flat plate 820, and the rear surface of the large-area manufacturing substrate LFP may be pressed by the inflated elastic film layer 830.
In addition, as shown in fig. 21, the transfer member 100 and the pressing head 200 are moved downward by the transfer driving member 300 so that the pressing head 200 can press the rear surface of the wafer WLP on which the plurality of light emitting elements LE are formed. The pressing head 200 presses the rear surface of the wafer WLP so that the plurality of light emitting elements LE formed on the wafer WLP are attached to the large-area manufacturing substrate LFP.
Thereafter, the laser irradiation member 700 (see fig. 12) irradiates laser light to the third opening 330 (see fig. 12) of the transfer driving member 300 and the second opening 110 (see fig. 12) of the transfer member 100. The laser light penetrating the third opening 330 of the transfer driving member 300 and the second opening 110 of the transfer member 100 penetrates the pressing head 200 and is emitted toward the front surface of the pressing head 200. The plurality of light emitting elements LE may be adhered to the large area manufacturing substrate LFP, and the plurality of light emitting elements LE may be heated by laser and transferred to the large area manufacturing substrate LFP.
Fig. 23 is a diagram illustrating a vehicle dashboard and center dashboard including a display apparatus in accordance with one or more embodiments.
Referring to fig. 23, a display substrate 101 (see fig. 6) or a display panel included in the display device of the present disclosure may be applied as the display device 10 or a display device of a vehicle instrument panel. For example, the display device 10 to which the light emitting element LE (see fig. 6) such as a micro LED or the like is applied may be applied to a dashboard 10_a of a vehicle, a center dashboard 10_b of a vehicle, or a Center Information Display (CID) 10_c provided at the dashboard of a vehicle. Further, the display device 10 according to the embodiment may be applied to in-vehicle mirror displays 10_d and 10_e or navigation devices or the like used in place of side view mirrors of vehicles.
Fig. 24 is a diagram illustrating a glasses-type virtual reality device including a display device according to one or more embodiments. Fig. 25 is a diagram illustrating a watch-type smart device including a display device in accordance with one or more embodiments.
Fig. 24 shows a glasses-type virtual reality device 1 including temples 30a and 30 b. The glasses type virtual reality device 1 according to an embodiment may include a virtual image display device 10_1, a left lens 10a, a right lens 10b, a support frame 20, temples 30a and 30b, a reflection member 40, and a display device memory 50. The virtual image display apparatus 10_1 may display a virtual image using the display substrate 101 (see fig. 6) shown in the embodiment of the present disclosure.
The glasses-type virtual reality device 1 according to one or more embodiments may be applied to a head-mounted display including a head-mounted band that can be worn on the head instead of the temples 30a and 30 b. That is, the glasses-type virtual reality device 1 according to one or more embodiments is not limited to the glasses-type virtual reality device 1 shown in fig. 24, and may be applied to various electronic devices in various forms.
Further, as shown in fig. 25, the display substrate 101 (see fig. 6) shown in the embodiment of the present disclosure can be applied to the position display device 10_2 as the wristwatch-type smart device 2 which is one of the smart devices.
Fig. 26 is a diagram illustrating a transparent display device including a display device in accordance with one or more embodiments.
Referring to fig. 26, the display substrate 101 (see fig. 6) shown in the embodiment of the present disclosure may be applied to the transparent display device 10_3. The transparent display device 10_3 may display an image IM and may also transmit light. Accordingly, the user positioned at the front side of the transparent display apparatus 10_3 can observe the object RS or the background at the rear side of the transparent display apparatus 10_3 and the image IM displayed on the display panel. When the display substrate 101 is applied to the transparent display device 10_3 shown in fig. 26, the display substrate 101 may include a light-transmitting portion capable of transmitting light or may be made of a material capable of transmitting light.
In summarizing the detailed description, those skilled in the art will understand that many variations and modifications may be made to the described embodiments without substantially departing from the principles of the present disclosure. Accordingly, the embodiments of the present disclosure are used in a generic and descriptive sense only and not for purposes of limitation.

Claims (15)

1. An apparatus for manufacturing a display panel, wherein the apparatus comprises:
a loading module configured to accommodate a large-area manufacturing substrate, the loading module configured to adjust an inclination of the large-area manufacturing substrate from a rear surface of the large-area manufacturing substrate, and press the large-area manufacturing substrate; and
a component transfer module configured to transfer a plurality of light emitting elements or at least one integrated circuit onto the large area manufacturing substrate, and the component transfer module is configured to bond and press a wafer onto the large area manufacturing substrate, the plurality of light emitting elements or the at least one integrated circuit being located on the wafer.
2. The apparatus of claim 1, wherein the component transfer module comprises:
a conveying member configured to fix the pressing head to a fixing portion of the conveying member in a pressing direction;
A conveying drive member configured to move the conveying member and the pressing head in the pressing direction or the separating direction by a fixed frame of the conveying member;
a pressure sensing module between the pressing head and the conveying member, and configured to generate a pressure detection signal according to a pressure applied to the pressing head; and
and an inclination setting module configured to calculate a pressing force control value for controlling the engagement pressing force of the loading module based on the magnitude of the pressure detection signal.
3. The apparatus of claim 2, wherein the pressure sensing module is configured to:
detecting the magnitude of the pressure applied to the pressing head by using a plurality of pressure sensors located at positions facing different directions;
generating the pressure detection signal based on the magnitude of the pressure; and
the pressure detection signal is transmitted to the inclination setting module together with the respective position codes for the plurality of pressure sensors using a signal transmission circuit.
4. The apparatus of claim 3, wherein the inclination setting module is configured to:
detecting a magnitude deviation of the pressure detection signal;
Calculating the pressing force control value of the loading module so that the magnitude deviation of the pressure detection signal is zero; and
transmitting the respective position codes and the pressing force control values for the plurality of pressure sensors to the loading module.
5. The apparatus of claim 3, wherein the plurality of pressure sensors each:
is positioned at an angular position of the inner step portion according to the shape of the inner step portion and the insertion hole of the conveying member to which the pressing head is fixed; or alternatively
Four axial directions located at the inner step portion formed in a quadrangular shape; or alternatively
Arranged in at least one polygonal shape including a triangle, pentagon or hexagon.
6. The apparatus of claim 2, wherein the loading module comprises:
a flat plate divided into a plurality of blocking areas, and having a plurality of air holes in each of the plurality of blocking areas;
an air supply stage having a plurality of air supply regions respectively corresponding to the plurality of blocking regions, and configured to supply air to the plurality of air holes in at least one of the plurality of blocking regions;
An elastic film layer covering a front surface of the flat plate or a loading surface for loading the large-area manufacturing substrate; and
a support frame having a sidewall frame with a first opening corresponding to the loading surface of the flat plate and surrounding an outer surface of the loading surface from a side surface.
7. The apparatus of claim 6, wherein the plurality of blocking areas correspond to arrangement positions or arrangement areas of a plurality of pressure sensors in the pressure sensing module of the element transfer module, respectively.
8. The apparatus according to claim 6, wherein the plurality of blocking areas respectively correspond to arrangement positions or arrangement areas of pressure controllers in the conveyance driving member of the element conveyance module.
9. The apparatus of claim 6, wherein the air supply stage includes a plurality of air injectors configured to generate air based on the pressing force control value and respective position codes for a plurality of pressure sensors input from the inclination setting module of the element transfer module, and
wherein the plurality of air injectors are located in the plurality of air supply areas, respectively.
10. The apparatus according to claim 9, wherein the plurality of air ejectors are respectively matched with arrangement positions and position codes of the plurality of pressure sensors located in the element transfer module to generate and eject air based on the pressing force control value for each matched position code,
wherein the air ejection intensity and the ejection period of each of the plurality of air ejectors are set based on the magnitude of the pressing force control value.
11. The apparatus according to claim 10, wherein the inclination setting module is configured to detect a magnitude deviation of the pressure detection signals detected by the plurality of pressure sensors, and calculate the pressing force control value of the loading module so that the magnitude deviation of the pressure detection signals is zero, and
wherein the plurality of air ejectors selectively eject air to each of the plurality of air supply regions based on the pressing force control value for each of the respective position codes that match the plurality of pressure sensors.
12. The apparatus of claim 6, wherein the elastic membrane layer comprises an elastic material selected from the group of silicone rubber, natural rubber, and synthetic rubber, or the elastic membrane layer comprises a membrane comprising the elastic material.
13. The apparatus of claim 6, wherein an outermost surface of the elastic film layer is attached to an outermost surface of the planar plate along a front outermost surface of the planar plate to seal the front surface of the planar plate.
14. The apparatus of claim 6, wherein an outermost surface of the elastic film layer is attached to an outermost surface of the loading surface along the loading surface of the flat plate to seal the loading surface on which the large area manufacturing substrate is loaded.
15. The apparatus of claim 6, wherein the support frame is located in front of the elastic film layer along an outermost surface of the elastic film layer to press the outermost surface of the elastic film layer and support a side surface of the wafer and a side surface of the large-area manufacturing substrate located on a front surface of the elastic film layer corresponding to the loading surface.
CN202311223840.XA 2022-10-11 2023-09-21 Apparatus for manufacturing display panel Pending CN117878218A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2022-0130067 2022-10-11
KR10-2022-0156937 2022-11-22
KR1020220156937A KR20240050960A (en) 2022-10-11 2022-11-22 Appratus for fabricating display panel and fabricating method thereof

Publications (1)

Publication Number Publication Date
CN117878218A true CN117878218A (en) 2024-04-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311223840.XA Pending CN117878218A (en) 2022-10-11 2023-09-21 Apparatus for manufacturing display panel

Country Status (1)

Country Link
CN (1) CN117878218A (en)

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