CN117871916A - High-frequency heavy-current generating circuit based on gallium nitride device - Google Patents
High-frequency heavy-current generating circuit based on gallium nitride device Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 90
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 230000003321 amplification Effects 0.000 claims abstract description 33
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 33
- 230000001939 inductive effect Effects 0.000 claims abstract description 14
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- 238000005070 sampling Methods 0.000 claims description 15
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- 230000001965 increasing effect Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 8
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- 239000004020 conductor Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 101100232414 Rattus norvegicus Clns1a gene Proteins 0.000 description 1
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- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
The high-frequency heavy-current generating circuit based on the gallium nitride device comprises a Howlan current source with voltage following, a bias and amplifying circuit, a gallium nitride power device quasi-complementary output circuit, a compensating circuit and an inductive load, wherein the improved Howlan current source based on the voltage following is adopted in a power amplification output stage, the gallium nitride power device quasi-complementary output circuit is designed to enable the power gallium nitride device to be in a linear amplifying region, the bias and amplifying circuit and the gallium nitride power device quasi-complementary output circuit are arranged in a feedback loop of the improved Howlan current source, and therefore sine wave high-frequency heavy-current class A and class B power amplifying output is achieved, the output frequency is higher than 500KHz, the output voltage can reach +/-220V, the peak output current exceeds 30A, and meanwhile the power amplifier has strong inductive load capacity. The method can be used for analyzing high-current high-frequency transient characteristics and alternating-current impedance of Rogowski coils, electromagnetic current transformers, cable conductors, inductors and the like, and simulating fault traveling wave current of the transmission line.
Description
[ field of technology ]
The invention relates to the technical field of high-frequency circuits, in particular to a high-frequency generation circuit based on a gallium nitride device.
[ background Art ]
In a power system, accurate fault location of a power transmission line based on traveling waves has been developed for many years, and has been widely used. With the development of technology, the demands for accurate positioning of faults of distribution networks and railway and subway cable faults are increasing. The accurate ranging of line faults can help the user to quickly check faults, and the power failure time is shortened. In the fault traveling wave distance measuring system, a high-frequency high-current traveling wave signal is converted into a voltage or current small signal through a rogowski coil or a high-frequency electromagnetic current transformer, and then the voltage or current small signal is input into a high-speed ADC sampling system through a signal processing circuit.
The frequency band covered by the fault transient traveling wave is very wide, from a few kilohertz to a few hundred kilohertz, and the current traveling wave is from a few amperes to a few hundred amperes, so that the requirements on the high-frequency high-current transient transmission characteristics of the rogowski coil or the high-frequency electromagnetic current transformer are very high. The better the high-frequency high-current transient transmission characteristic is, the higher the fault location accuracy is. The analog high-frequency high-current traveling wave signal is used for traveling wave ranging test and evaluating the high-frequency high-current transient transmission characteristics of a rogowski coil or a high-frequency electromagnetic current transformer, but the high-frequency high-current transient transmission characteristics of the high-frequency high-current traveling wave signal are required to be used for an electric measuring instrument comprehensive checking device, a digital simulation power amplifier, a relay protection tester and other devices widely used in the power industry at present and a power operational amplifier for outputting high current in the market, and the analog high-frequency high-current traveling wave signal is limited by the structure, the process and the material characteristics of a high-power transistor and a MOS transistor device, the amplitude of the output alternating current can reach 60A, but the frequency is not more than 10kHz, and the high-frequency requirement cannot be met. The PA50 with large current output, such as Apex Microtechnology, can output 40A continuous current and 100A peak current, but the full power bandwidth is 200kHz, the working voltage is only +/-50V, and the requirements of high frequency above 500kHz, such as +/-220V, of the working voltage can not be met when inductive loads such as rogowski coils or high-frequency electromagnetic current transformers are driven.
[ invention ]
In order to solve the problems, the invention provides a high-frequency high-current generating circuit based on a gallium nitride power device, which can be used for analyzing high-current high-frequency transient characteristics and alternating-current impedance of a rogowski coil, an electromagnetic current transformer, a cable conductor, an inductor and the like and simulating fault traveling wave current of a transmission line.
The basic scheme is that an improved Howland current source based on charged follow is adopted in a power amplifier output stage, a gallium nitride power device quasi-complementary output circuit is adopted, a corresponding bias and amplification circuit is designed to enable a power gallium nitride device to be in a linear amplification region, the bias and amplification circuit and the gallium nitride power device quasi-complementary output circuit are arranged in a feedback loop of the improved Howland current source, sine wave high-frequency high-current class A and class B power amplified output is realized through a compensation circuit and an element, the output frequency is higher than 500KHz, the output voltage can reach +/-220V, the peak output current exceeds 30A, and meanwhile, the power amplifier has stronger inductive load capacity.
A high frequency high current generation circuit based on a gallium nitride device, the generation circuit comprising: the device comprises a Howlan current source with voltage following, a bias and amplification circuit, a gallium nitride power device quasi-complementary output circuit, a compensation circuit and an inductive load, wherein the bias and amplification circuit and the gallium nitride power device quasi-complementary output circuit are positioned in a Howlan current source feedback loop;
the gallium nitride power device quasi-complementary circuit comprises: two high-voltage gallium nitride power devices of the same type are adopted to form quasi-complementary power amplification output of class A and class B;
the bias and amplification circuit: the high-frequency complementary power tube, the high-side constant current source, the low-side constant current source, the Ube amplifying circuit and the high-frequency power tube, wherein the high-side constant current source, the low-side constant current source and the high-frequency power tube (Q3) form a common-emission amplifying circuit with an active load; the Ube amplifying circuit is positioned between the high-frequency power tube (Q3) and the low-side constant current source to eliminate crossover distortion of the gallium nitride power device, wherein the high-frequency complementary power tube drives the gallium nitride power device to work in the linear amplifying region;
the Howlan current source with voltage follower: the high-voltage high-speed operational amplifier comprises a high-voltage high-speed operational amplifier, a resistor feedback network, a sampling resistor and a compensation inductor, wherein voltage signals on the sampling resistor and the compensation inductor are respectively input to an in-phase input end and an anti-phase input end of a first high-voltage high-speed operational amplifier (U1) through a voltage follower circuit and the resistor feedback network;
the compensation circuit: the circuit comprises an RC compensation circuit, a compensation inductor and a compensation capacitor, the capacity and stability of the circuit with inductive load are improved, and the phase margin is increased.
In the quasi-complementary output circuit of the gallium nitride power device, two high-voltage gallium nitride power devices of the same type are adopted, and class A and class B quasi-complementary power amplification output is formed for the first gallium nitride power device T1 and the second high-voltage gallium nitride power device T2 respectively, wherein the breakdown voltage between the drain electrode and the source electrode of the gallium nitride power device is not lower than 650V, the switching frequency is higher than 10 MHz, and the drain current reaches 60A.
The bias and amplification circuit comprises a high-frequency complementary power tube, high-side and low-side constant current sources, a Ube amplification circuit and a high-frequency power tube, wherein a first high-frequency complementary power tube Q1 and a second high-frequency complementary power tube Q2 enable a first gallium nitride power device T1 and a second gallium nitride power device T2 in the quasi-complementary output circuit to work in a linear amplification region; the first high-frequency complementary power tube Q1 and the second high-frequency complementary power tube Q2 adopt complementary NPN-PNP power transistors or NMOS-PMOS field effect transistors, the working voltage is not lower than 300V, and the switching frequency is higher than 10 MHz. A common-emission amplifying circuit with an active load is formed by a high-side constant current source, a low-side constant current source and a high-frequency power tube Q3; the Ube amplifying circuit is used for eliminating the cross distortion of the first gallium nitride power device T1 and the second high-voltage gallium nitride power device T2; the Ube amplifying circuit comprises a power tube (Q4), a voltage dividing resistor (R14), a voltage dividing resistor (R15) and an adjustable resistor (Radj).
The Howlan current source with voltage follower comprises a first high-voltage high-speed operational amplifier U1, a second high-voltage high-speed operational amplifier U2, a first feedback resistor R1, a second feedback resistor R2, a third feedback resistor R3, a fourth feedback resistor R4, a sampling resistor Rs and a compensation inductor (Ls), wherein a bias and amplification circuit and a gallium nitride power device quasi-complementary output circuit are arranged in a Howlan current source feedback loop, the nonlinear transfer characteristic of the gallium nitride power device is improved, the cross distortion of class A and class B power amplifiers is reduced, the output precision is improved, and the harmonic distortion rate is reduced. The first high-voltage high-speed operational amplifier U1 and the second high-voltage high-speed operational amplifier U2 work power supply are more than 450V, the slew rate is more than 1000V/mu s, the full power bandwidth is more than 500kHz, and the output current reaches 0.2A.
The compensating circuit comprises an RC compensating circuit, a compensating inductor (Ls) and a compensating capacitor (C1), wherein the RC compensating circuit is formed by serially connecting a resistor Rc and a capacitor Cc, then a feedback resistor (R3) is connected in parallel, the compensating inductor (Ls) and a sampling resistor (Rs) are serially connected, and the compensating capacitor (C1) is positioned between a base electrode and a collector electrode of the high-frequency power tube (Q3). The compensation circuit improves the capacity and stability of the high-frequency heavy-current generation circuit with inductive load and increases the phase margin.
The power source + -VCC of the high-frequency heavy-current generation circuit can work at direct current + -24V to + -225V, when the input is a high-frequency sine wave voltage signal, the power source + -VCC can be converted into sine wave heavy-current output with corresponding frequency, the output frequency is more than 500KHz, the output voltage can reach + -220V at most, and the peak output current exceeds 30A; when the input is signals such as direct current voltage, step voltage and the like, the signals such as corresponding direct current, step current and the like are output; when a high-frequency sine wave voltage signal biased by a direct current voltage is input, a sine wave current with a corresponding frequency is output to be overlapped with a corresponding direct current.
The invention has the beneficial effects that: according to the invention, a gallium nitride power device quasi-complementary output circuit is adopted in a power amplification output stage, a corresponding bias and amplification circuit is designed to enable the power gallium nitride device to be in a linear amplification region, and the bias and amplification circuit and the gallium nitride power device quasi-complementary output circuit are arranged in a Howland current source feedback loop, so that sine wave high-frequency high-current class A and class B power amplification output is realized, the output frequency is higher than 500KHz, the output voltage can reach +/-220V, the peak output current exceeds 30A, and the power amplifier has strong inductive load capacity. The problems that equipment or devices such as an electric measuring instrument comprehensive checking device, a digital simulation power amplifier, a relay protection tester, a power operational amplifier and the like cannot output high frequency, high voltage and large current at the same time and output energy band strong inductive load at the same time are solved. The circuit is used together with a signal generator, a high-power high-voltage direct-current power supply, an oscilloscope or a network analyzer, and can be used for analyzing high-current high-frequency transient characteristics and alternating-current impedance of Rogowski coils, electromagnetic current transformers, cable conductors, inductors and the like and simulating fault traveling wave currents of a power transmission line.
[ description of the drawings ]
Fig. 1 shows a high-frequency high-current generation circuit based on a gallium nitride power device according to the present invention;
fig. 2 is a high-frequency high-current generation expansion circuit based on a gallium nitride power device according to the invention;
[ detailed description ] of the invention
The present invention will be described in detail below with reference to the drawings and embodiments, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
Referring to fig. 1, there is shown a high-frequency high-current generating circuit based on gallium nitride device, wherein the generating circuit comprises: the device comprises a Howlan current source with voltage following, a bias and amplification circuit, a gallium nitride power device quasi-complementary output circuit, a compensation circuit and an inductive load, wherein the bias and amplification circuit and the gallium nitride power device quasi-complementary output circuit are positioned in a Howlan current source feedback loop;
the gallium nitride power device quasi-complementary circuit comprises: two high-voltage gallium nitride power devices of the same type are adopted to form quasi-complementary power amplification output of class A and class B, and the quasi-complementary power amplification output of class A and class B is respectively formed by a first gallium nitride power device T1 and a second high-voltage gallium nitride power device T2, wherein the breakdown voltage between a drain electrode and a source electrode of the gallium nitride power device is not lower than 650V, the switching frequency is higher than 10 MHz, and the drain current reaches 60A.
The gates of the first gallium nitride power device T1 and the second high-voltage gallium nitride power device T2 are respectively connected with a resistor R12 and a resistor R13 in series, so that the conduction speed of the gallium nitride power tube is controlled, and oscillation caused by too fast switching is avoided. The sources of the first gallium nitride power device T1 and the second high-voltage gallium nitride power device T2 are respectively connected with a milliohm-level high-power resistor R8 and a resistor R9, and overcurrent damage of the first gallium nitride power device T1 and the second high-voltage gallium nitride power device T2 can be prevented by adding a protection circuit. The gallium nitride power device has faster switching speed and better high-frequency performance than silicon carbide and super-junction silicon MOS, but the working principle of the gallium nitride power device is different from that of a transistor and a power field effect transistor, when the gate-source voltage is larger than zero, a two-dimensional electron gas (2 DEG) channel is formed between a drain and a source so as to conduct the device, and therefore, the device is not similar to PNP or PMOS type, and therefore, a quasi-complementary output structure is required to be adopted in a power output stage, and corresponding bias and amplifying circuits are designed.
The bias and amplification circuit: the high-frequency complementary power tube, the high-side constant current source, the low-side constant current source, the Ube amplifying circuit and the high-frequency power tube, wherein the high-side constant current source, the low-side constant current source and the high-frequency power tube (Q3) form a common-emission amplifying circuit with an active load; the Ube amplifying circuit is positioned between a high-frequency power tube (Q3) and a low-side constant current source, and is used for eliminating crossover distortion of gallium nitride power devices, wherein the first gallium nitride power device T1 and the second gallium nitride power device T2 in the quasi-complementary output circuit work in a linear amplifying region by adopting a first high-frequency complementary power tube Q1 and a second high-frequency complementary power tube Q2, a resistor R5 is connected with an emitter of the first high-frequency complementary power tube Q1, a resistor R7 is connected with a collector resistor of the second high-frequency complementary power tube Q2, and voltages on the resistor R5 and the resistor R7 are used as grid voltages to drive the first gallium nitride power device T1 and the second gallium nitride power device T2 respectively, so that the T1 and the T2 are conducted respectively at positive half cycles and negative half cycles of sine waves;
the first high-frequency complementary power tube Q1 and the second high-frequency complementary power tube Q2 adopt complementary NPN-PNP power transistors or NMOS-PMOS field effect transistors, the working voltage is not lower than 300V, and the switching frequency is higher than 10 MHz.
The Ube expansion circuit consists of a power tube Q4, a voltage dividing resistor R14, a voltage dividing resistor R15 and an adjustable resistor Radj. The Ube amplifying circuit is used as a bias circuit to enable Q1, Q2, T1 and T2 to work in an amplifying region, so that crossover distortion of the first gallium nitride power device T1 and the second gallium nitride power device T2 is eliminated; the high-side constant current source, the low-side constant current source and the high-frequency power tube Q3 form a common-emission amplifying circuit with an active load, bias current is provided for the Ube amplifying circuit, and Q1, Q2 and Q3 are located in a linear amplifying region.
The Howlan current source with voltage following comprises a high-voltage high-speed operational amplifier, a load resistor, an impedance resistor and an inductor: the Howlan current source with voltage following comprises a first high-voltage high-speed operational amplifier U1, a second high-voltage high-speed operational amplifier U2, a first feedback resistor R1, a second feedback resistor R2, a third feedback resistor R3, a fourth feedback resistor R4, a sampling resistor Rs and a compensation inductor (Ls), wherein the feedback resistor R3 and the feedback resistor R4 form a positive feedback network of the first high-voltage high-speed operational amplifier U1, the first feedback resistor R1 and the second feedback resistor R2 form a negative feedback network of the first high-voltage high-speed operational amplifier U1, and the ratio of R2/R1 to R4/R3 is generally equal. The sampling resistor Rs and the compensating inductor Ls form a sampling impedance. The second high-voltage high-speed operational amplifier U2 is used as a voltage follower to input output voltage to the non-inverting input end of the first high-voltage high-speed operational amplifier U1 through a positive feedback network formed by feedback resistors R3 and R4. VG1 is sine wave voltage signal output by signal generator, and determines output current and frequency with first high voltage high speed operational amplifier U1 and second high voltage high speed operational amplifier U2, feedback resistors R1-R4, sampling resistor Rs, compensating inductance Ls, etc.
The first high-voltage high-speed operational amplifier U1 and the second high-voltage high-speed operational amplifier U2 work power supply are more than 450V, the slew rate is more than 1000V/mu s, the full power bandwidth is more than 500kHz, and the output current reaches 0.2A.
The peripheral capacitors C2 and C3 of the first high-voltage high-speed operational amplifier U1 and the second high-voltage high-speed operational amplifier U2 are used for loop compensation, the resistors Rcl1 and Rcl2 are used for operational amplifier output current overcurrent protection, and the capacitors C4-C7 and C8-C11 serve as positive and negative power supply filtering. By arranging the bias and amplifying circuit and the quasi-complementary output circuit of the gallium nitride power device in the feedback loop of the improved Howland current source, the nonlinear transfer characteristic of the gallium nitride power device can be improved, and the cross-over distortion of the class A and class B power amplifier can be reduced.
The compensation circuit comprises an RC compensation circuit, a compensation inductance Ls and a compensation capacitance C1, so that the capacity and stability of the circuit with inductive load are improved, and the phase margin is increased. The RC compensation circuit is formed by connecting a resistor Rc and a capacitor Cc in series and then connecting the resistor Rc and a third feedback resistor R3 in parallel. The compensation inductance Ls is connected in series with the sampling resistor Rs, and the compensation capacitor C1 is positioned between the base electrode and the collector electrode of the high-frequency power tube Q3. The compensation inductance Ls and the sampling resistor Rs act as impedance elements and simultaneously influence the magnitude of the output current Iout.
The inductive load consists of a resistor RL and an inductance LL, and the specific value depends on the rogowski coil, the electromagnetic current transformer, the cable conductor and the inductance itself.
The high-frequency high-current generating circuit power source + -VCC is provided by a high-power high-voltage direct-current power source. The power supply operating range is DC + -24V to + -225V. When the working power supply of the circuit is +/-225V and the input is a high-frequency sine wave voltage signal, the output can be converted into Iout sine wave large current output with corresponding frequency, the output frequency is more than 500KHz, the output voltage can reach +/-220V at most, and the peak output current exceeds 30A; when the input is signals such as direct current voltage, step voltage and the like, outputting signals such as corresponding direct current, step current and the like; when a high-frequency sine wave voltage signal biased by a direct current voltage is input, the output Iout is a sine wave current with corresponding frequency superimposed on the corresponding direct current.
Example 2:
as shown in fig. 2, in the expansion circuit based on the "high-frequency high-current generation circuit based on gallium nitride power device" described in fig. 1, in the quasi-complementary output circuit of gallium nitride power device, high-voltage enhanced GaN power devices T1 and T2, T3 and T4, and T5 and T6 respectively form 3 pairs of quasi-complementary power amplification outputs of class ab. The peak output current of the 1 alignment complementary circuit exceeds 30A in the safe operating area of the gallium nitride power device, and the peak output current of the 3 alignment complementary circuit exceeds 90A. The grid electrodes of the T1-T6 are respectively connected with resistors R12, R13 and R20-R23 in series to control the conduction speed of the gallium nitride power tube, so that oscillation caused by too fast switching is avoided. The sources of the T1-T6 are respectively connected with milliohm high-power resistors R8, R9 and R24-R27, and the overcurrent damage of the T1-T6 can be prevented by adding a protection circuit.
In the bias and amplification circuit part, a high-side and low-side constant current source implementation mode is provided, and a high-side constant current source is formed by a PNP type high-frequency power tube Q5, diodes D1 and D2 and resistors R16 and R18, so that about 20mA bias current is provided. The low-side constant current source is composed of an NPN high-frequency power tube Q6, diodes D3 and D4, resistors R17 and R19, and a bias current of about 15mA is provided.
Although the present invention has been described with respect to the preferred embodiments, it should be understood that the invention is not limited to the specific embodiments, but is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. A high frequency high current generation circuit based on a gallium nitride device, the generation circuit comprising: the device comprises a Howlan current source with voltage following, a bias and amplification circuit, a gallium nitride power device quasi-complementary output circuit, a compensation circuit and an inductive load, wherein the bias and amplification circuit and the gallium nitride power device quasi-complementary output circuit are positioned in a Howlan current source feedback loop;
the gallium nitride power device quasi-complementary circuit comprises: two high-voltage gallium nitride power devices of the same type are adopted to form quasi-complementary power amplification output of class A and class B;
the bias and amplification circuit: the high-frequency complementary power tube, the high-side constant current source, the low-side constant current source, the Ube amplifying circuit and the high-frequency power tube, wherein the high-side constant current source, the low-side constant current source and the high-frequency power tube (Q3) form a common-emission amplifying circuit with an active load; the Ube amplifying circuit is positioned between the high-frequency power tube (Q3) and the low-side constant current source to eliminate crossover distortion of the gallium nitride power device, wherein the high-frequency complementary power tube drives the gallium nitride power device to work in the linear amplifying region;
the Howlan current source with voltage follower: the high-voltage high-speed operational amplifier comprises a high-voltage high-speed operational amplifier, a resistor feedback network, a sampling resistor and a compensation inductor, wherein voltage signals on the sampling resistor and the compensation inductor are respectively input to an in-phase input end and an anti-phase input end of a first high-voltage high-speed operational amplifier (U1) through a voltage follower circuit and the resistor feedback network;
the compensation circuit: the circuit comprises an RC compensation circuit, a compensation inductor and a compensation capacitor, the capacity and stability of the circuit with inductive load are improved, and the phase margin is increased.
2. The gallium nitride device-based high-frequency heavy-current generation circuit according to claim 1, wherein in the gallium nitride power device quasi-complementary output circuit, two high-voltage gallium nitride power devices of the same type are adopted to form class A and class B quasi-complementary power amplification output for a first gallium nitride power device (T1) and a second gallium nitride power device (T2), breakdown voltage between a drain electrode and a source electrode of the gallium nitride power device is not lower than 650V, switching frequency is higher than 10 MHz, and drain current reaches 60A.
3. The gallium nitride device-based high-frequency high-current generation circuit according to claim 1, wherein the bias and amplification circuit comprises a high-frequency complementary power tube, high-side and low-side constant current sources, a Ube amplification circuit, and a high-frequency power tube, wherein a first high-frequency complementary power tube (Q1) and a second high-frequency complementary power tube (Q2) enable a first gallium nitride power device (T1) and a second gallium nitride power device (T2) in a quasi-complementary output circuit to operate in a linear amplification region; the first high-frequency complementary power tube (Q1) and the second high-frequency complementary power tube (Q2) adopt complementary NPN-PNP power transistors or NMOS-PMOS field effect transistors, the working voltage is not lower than 300V, and the switching frequency is higher than 10 MHz; a common-emission amplifying circuit with an active load is formed by a high-side constant current source, a low-side constant current source and a high-frequency power tube (Q3); a Ube expansion circuit is adopted to eliminate the cross distortion of the first gallium nitride power device (T1) and the second high-voltage gallium nitride power device (T2); the Ube amplifying circuit comprises a power tube (Q4), a voltage dividing resistor (R14), a voltage dividing resistor (R15) and an adjustable resistor (Radj).
4. A high frequency high current generating circuit based on gallium nitride device according to claim 3, wherein the howlan current source with voltage follower comprises a first high voltage high speed operational amplifier (U1), a second high voltage high speed operational amplifier (U2), first to fourth feedback resistors (R1 to R4), a sampling resistor (Rs) and a compensating inductance (Ls), wherein a bias and amplifying circuit, a gallium nitride power device quasi-complementary output circuit are placed in the howlan current source feedback loop; the first high-voltage high-speed operational amplifier (U1) and the second high-voltage high-speed operational amplifier (U2) work power supply are more than 450V, the slew rate is more than 1000V/mu s, the full power bandwidth is more than 500kHz, and the output current reaches 0.2A.
5. The high-frequency high-current generation circuit based on the gallium nitride device according to claim 1, wherein the compensation circuit comprises an RC compensation circuit, a compensation inductor (Ls) and a compensation capacitor (C1), wherein the RC compensation circuit is formed by connecting a resistor Rc and a capacitor Cc in series, then connecting a third feedback resistor (R3) in parallel, the compensation inductor (Ls) and a sampling resistor (Rs) are connected in series, and the compensation capacitor (C1) is positioned between a base electrode and a collector electrode of the high-frequency power tube (Q3).
6. A high-frequency high-current generating circuit based on a gallium nitride power device, which is characterized by comprising the application of the high-frequency high-current generating circuit according to any one of claims 1-5 in expanding quasi-complementary output formed by a plurality of pairs of gallium nitride power devices in the quasi-complementary output circuit based on the high-frequency high-current generating circuit based on the gallium nitride power device.
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| CN (1) | CN117871916A (en) |
-
2024
- 2024-01-12 CN CN202410048406.0A patent/CN117871916A/en active Pending
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