CN117861083A - High-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment - Google Patents
High-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment Download PDFInfo
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- CN117861083A CN117861083A CN202311796987.8A CN202311796987A CN117861083A CN 117861083 A CN117861083 A CN 117861083A CN 202311796987 A CN202311796987 A CN 202311796987A CN 117861083 A CN117861083 A CN 117861083A
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- Prior art keywords
- semiconductor laser
- end cap
- imaging lens
- power semiconductor
- dodging
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 230000001225 therapeutic effect Effects 0.000 title claims abstract description 18
- 208000010195 Onychomycosis Diseases 0.000 title claims abstract description 17
- 201000005882 tinea unguium Diseases 0.000 title claims abstract description 17
- 230000002538 fungal effect Effects 0.000 title claims abstract description 16
- 238000003384 imaging method Methods 0.000 claims abstract description 37
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- 239000013307 optical fiber Substances 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 239000010453 quartz Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000265 homogenisation Methods 0.000 claims abstract description 10
- 239000007787 solid Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 230000007812 deficiency Effects 0.000 abstract description 3
- 239000000835 fiber Substances 0.000 description 5
- XUMBMVFBXHLACL-UHFFFAOYSA-N Melanin Chemical compound O=C1C(=O)C(C2=CNC3=C(C(C(=O)C4=C32)=O)C)=C2C4=CNC2=C1C XUMBMVFBXHLACL-UHFFFAOYSA-N 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 206010033372 Pain and discomfort Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 208000017520 skin disease Diseases 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- Radiation-Therapy Devices (AREA)
- Laser Surgery Devices (AREA)
Abstract
The invention discloses a high-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment, which comprises a shell, a semiconductor laser source, a coupler, a transmission optical fiber, a dodging end cap and an imaging lens, wherein the semiconductor laser source, the coupler, the transmission optical fiber, the dodging end cap and the imaging lens are positioned on the same optical axis, the dodging end cap is welded at the tail end of the optical fiber, the light beam of the semiconductor laser source is optically shaped, is coupled into the transmission optical fiber with a large core diameter by the coupler, and is emitted from an outlet of the dodging end cap after being dodged inside the dodging end cap. The invention adopts a plurality of 1064nm high-power semiconductor laser chips to replace a solid laser so as to achieve the aim of carrying out treatment with preset high power, ensure the treatment effect and realize miniaturization. The invention also utilizes the light homogenizing end cap made of quartz to perform light beam homogenization so as to ensure that the light spots irradiated to the human body are more uniform and avoid local burn or local irradiation deficiency.
Description
Technical Field
The invention relates to a high-power semiconductor laser therapeutic apparatus for treating fungal onychomycosis, belonging to the technical field of medical appliances.
Background
The principle of selective photothermal action is often utilized in medicine, and long-pulse 1064nm infrared laser with high energy density is adopted as an important treatment means for fungal onychomycosis. The selective photothermal effect is the most important treatment method in the laser medical field, and refers to selecting proper optical wavelength, energy and pulse width according to biological characteristics of different tissues so as to ensure that the lesion tissues are effectively treated and simultaneously avoid damaging surrounding normal tissues as much as possible. When the high-energy near infrared laser is used for irradiating the onychomycosis part, melanin carried by fungal onychomycosis can strongly absorb laser, the temperature is rapidly increased, and then fungal cells are heated, denatured and dead.
YAG solid laser with high power Nd: YAG solid laser with wavelength of 1064nm is a common treatment device for fungal onychomycosis. However, the traditional 1064nm long pulse laser is generated by pumping Nd: YAG solid laser crystals through a pulse xenon lamp, the photoelectric conversion efficiency is low, and only about 2-3% of the long pulse laser is transmitted through a light guide joint arm or coupled into a large-core multimode fiber. For the transmission mode of the light guide joint arm, the distribution of the final laser energy depends on the far-field beam quality and uniformity of the solid laser, the solid laser source is flat-topped, the final light spot is also flat-topped, and if the solid laser source is uneven, the final light spot is also uneven. The tail end of the large-core multimode fiber always presents the characteristic of approximate Gaussian distribution of strong center and weak edge, so that the light intensity distribution of the large-core multimode fiber after collimation or focusing is basically the characteristic of strong center and weak edge. The two laser transmission modes cannot ensure that the homogenization of the final treatment spot is realized. Uneven spot means uneven laser energy distribution, some locations may get too high energy, and other locations may get insufficient energy. This may lead to unstable or even ineffective treatment and may increase pain and discomfort for the patient.
In recent years, with the development of semiconductor lasers in the high-power and multi-wavelength directions, a 1064nm semiconductor laser can gradually realize peak power of hundreds of watts or even up to kilowatts, and the electro-optical efficiency of the semiconductor laser exceeds 50%, so that the semiconductor laser can be used as a new light source and can be used as a substitute product of long-pulse Nd-YAG solid laser. However, since the light source comes from the aggregation of multiple light emitting dies, the semiconductor laser needs to be coupled into a single optical fiber for transmission through beam shaping and beam combination, so that the efficient transmission of the high-power medical laser can be realized. The optical fiber transmission also brings the problem of strong center and weak edge of the end light intensity distribution.
Therefore, it is necessary to design a high power semiconductor laser therapeutic apparatus having a uniform spot for the treatment of fungal onychomycosis.
Disclosure of Invention
The invention aims to provide a high-power semiconductor laser therapeutic apparatus for treating fungal onychomycosis.
In order to achieve the technical purpose, the invention adopts the following technical scheme:
a high-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment comprises a shell, a semiconductor laser source, a coupler, a transmission optical fiber, a dodging end cap and an imaging lens, wherein the semiconductor laser source, the coupler, the transmission optical fiber, the dodging end cap and the imaging lens are arranged in the shell; wherein the semiconductor laser source, the coupler, the transmission optical fiber, the dodging end cap and the imaging lens are positioned on the same optical axis, the dodging end cap is welded at the tail end of the optical fiber,
the light beam of the semiconductor laser source is optically shaped, coupled into a transmission optical fiber with a large core diameter by a coupler, subjected to light homogenization inside the light homogenization end cap and then emitted from an outlet of the light homogenization end cap.
Wherein preferably, the dodging end cap is made of quartz.
Wherein preferably, the columnar length L of the dodging end cap is more than or equal to 20mm, the diameter D=2mm, and the distance between the dodging end cap and the imaging lens is 20mm.
Wherein preferably the focal length f=12 mm of the imaging lens.
Wherein preferably the imaging lens has an optical aperture OA of 12mm.
Wherein preferably, the distance from the light-emitting end face of the shell to the optical center of the imaging lens is 30mm.
Wherein, preferably, the emergent end face of the dodging end cap and the imaging lens are both plated with an optical antireflection film which transmits 1064nm wavelength.
Preferably, the semiconductor laser source is composed of a plurality of 1064nm high-power semiconductor laser chips, and the light beams are incident to the coupler after being combined so as to be coupled to the transmission optical fiber.
Compared with the prior art, the invention adopts a plurality of 1064nm high-power semiconductor laser chips to achieve the preset high-power treatment, ensure the treatment effect and realize miniaturization. The invention also utilizes the light homogenizing end cap made of quartz to perform light beam homogenization so as to ensure that the light spots irradiated to the human body are more uniform and avoid local burn or local irradiation deficiency.
Drawings
Fig. 1 is a schematic structural diagram of a high-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment according to an embodiment of the present invention;
fig. 2 is a schematic structural view of a light homogenizing end cap made of quartz in an embodiment of the invention.
Detailed Description
The technical contents of the present invention will be described in detail with reference to the accompanying drawings and specific examples.
The technical conception in the embodiment of the invention is as follows: a plurality of high-power 1064nm high-power semiconductor laser chips are used for replacing a solid laser, optical fiber coupling transmission is adopted, light is evenly distributed through a specially-made light-evenly distributed end cap, and then the emergent end of the end cap is imaged through a convex lens, so that even light spots are formed at image points and are used for radiation treatment of fungal onychomycosis parts. The 1064nm high-power semiconductor laser chip has the advantages of high electro-optical efficiency, simple and reliable structure, strong spot uniformity and the like.
As shown in fig. 1, the high-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment provided by the embodiment of the invention comprises a shell 10, and a semiconductor laser source 1, a coupler 2, a transmission optical fiber 3, a dodging end cap 4 and an imaging lens 5 which are positioned in the shell 10. The semiconductor laser source 1, the coupler 2, the transmission fiber 3, the dodging end cap 4 and the imaging lens 5 are positioned on the same optical axis.
The semiconductor laser source 1 adopts a plurality of 1064nm high-power semiconductor laser chips to achieve the preset high power, for example 200-500W, so as to achieve the purpose of treatment. The semiconductor laser chip may be a vertical cavity surface emitting semiconductor laser (VCSEL) or an edge emitting semiconductor laser (EEL).
The light beam of the semiconductor laser source 1 is optically shaped and coupled into a large-core transmission fiber by a coupler 2. This is prior art and will not be described in detail here.
A light homogenizing end cap 4 made of quartz with a smooth outer wall is welded at the light emitting end of the transmission optical fiber, and the quartz internally passes through the light homogenizing end cap 4 at one end distance and then is emitted from the outlet of the light homogenizing end cap 4. An imaging lens is designed at the outgoing end of the dodging end cap 4, the outgoing end of the end cap is imaged to an image point, and finally, even light spots with flat-top distribution are realized at the image point and are used for treating the final skin diseases.
Optical simulation and experiments prove that when the quartz optical fiber with the conventional numerical aperture of 0.22 and 200um or 400um is incident, when the cylindrical length L (without the cone length, refer to fig. 2) of the uniform light end cap 4 made of quartz is more than 10 times of the diameter D (L is more than or equal to 10D), the light spot uniformity of the output end face of the uniform light end cap 4 can be within +/-10%. The spot commonly used for onychomycosis treatment is typically 2-4 mm, and is not too much different for the subsequent imaging rate, so a dodging end cap 4 made of quartz with a diameter close to the target spot diameter is chosen. That is, the diameter D of the light homogenizing cap 4 satisfies the following condition: d is more than or equal to 2mm and less than or equal to 4mm.
According to the type selection requirement of the imaging lens:
OA＞D+2*u*tan(θ)
D/u＝D’/v
1/u+1/v＝1/f
wherein OA represents the optical aperture of the imaging lens, and D represents the diameter of the light-emitting end face of the light-homogenizing end cap; d' represents an imaging diameter; u denotes an object focal length of the imaging lens; v denotes an image Fang Jiaoju of the imaging lens; f represents the focal length of the imaging lens.
In one embodiment of the invention, a treatment spot of 3mm is commonly used, so the diameter of the dodging endcap d=2 mm, l+.20mm dodging endcap, imaging ratio 2:3 imaging, focal length f=12 mm of imaging lens, imaging at 20mm object distance and 30mm image distance, exit divergence angle is smaller than that of optical fiber (< 12.5 degrees), so optical aperture OA > 2+2×20×tan (12.5 degrees) =10.86 mm, i.e. oa=12 mm convex lens, for completing imaging from 2mm end face to 2mm spot.
In other words, in one embodiment of the present invention, the cylindrical length L of the light homogenizing cap 4 is ≡20mm, the diameter d=2 mm, and the distance between it and the imaging lens 5 is 20mm; the distance from the light exit end face of the housing 10 (for treatment in close proximity to the skin) to the optical center of the imaging lens (working distance) was 30mm. Focal length f=12 mm of the imaging lens.
Wherein, the emergent end face of the dodging end cap 4 and the imaging lens are both plated with an optical antireflection film, and the light is transmitted at 1064nm wavelength so as to reduce optical loss.
Compared with the prior art, the invention adopts a plurality of 1064nm high-power semiconductor laser chips to replace the solid laser, so as to achieve the preset high-power treatment, ensure the treatment effect and realize miniaturization. The invention also utilizes the light homogenizing end cap made of quartz to perform light beam homogenization so as to ensure that the light spots irradiated to the human body are more uniform and avoid local burn or local irradiation deficiency.
It should be noted that the above embodiments are only examples, and the technical solutions of the embodiments may be combined, which are all within the protection scope of the present invention.
The high power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment provided by the invention is described in detail above. Any obvious modifications to the present invention, without departing from the spirit thereof, would constitute an infringement of the patent rights of the invention and would take on corresponding legal liabilities.
Claims (8)
1. A high-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment is characterized by comprising a shell, a semiconductor laser source, a coupler, a transmission optical fiber, a dodging end cap and an imaging lens, wherein the semiconductor laser source, the coupler, the transmission optical fiber, the dodging end cap and the imaging lens are positioned in the shell; the semiconductor laser source, the coupler, the transmission optical fiber, the dodging end cap and the imaging lens are positioned on the same optical axis, and the dodging end cap is welded at the light outlet end of the transmission optical fiber;
the light beam of the semiconductor laser source is optically shaped, coupled into a transmission optical fiber with a large core diameter by a coupler, subjected to light homogenization inside the light homogenization end cap and then emitted from an outlet of the light homogenization end cap.
2. The high power semiconductor laser therapeutic apparatus as defined in claim 1, wherein:
the light homogenizing end cap is made of quartz.
3. The high power semiconductor laser therapeutic apparatus as defined in claim 2, wherein:
the cylindrical length L of the dodging end cap is more than or equal to 20mm, the diameter D=2mm, and the distance between the dodging end cap and the imaging lens is 20mm.
4. A high power semiconductor laser therapeutic device as defined in claim 3, wherein:
the focal length of the imaging lens is 12mm.
5. The high power semiconductor laser therapeutic apparatus according to claim 4, wherein:
the imaging lens has an optical aperture of 12mm.
6. The high power semiconductor laser therapeutic apparatus according to claim 5, wherein:
the distance from the light-emitting end face of the shell to the optical center of the imaging lens is 30mm.
7. The high power semiconductor laser therapeutic apparatus as defined in claim 6, wherein:
the emergent end face of the dodging end cap and the imaging lens are both plated with an optical antireflection film which transmits 1064nm wavelength.
8. The high power semiconductor laser therapeutic apparatus as defined in claim 6, wherein:
the semiconductor laser source consists of a plurality of 1064nm high-power semiconductor laser chips, and the light beams are incident to the coupler after being combined so as to be coupled to the transmission optical fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311796987.8A CN117861083A (en) | 2023-12-25 | 2023-12-25 | High-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311796987.8A CN117861083A (en) | 2023-12-25 | 2023-12-25 | High-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117861083A true CN117861083A (en) | 2024-04-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311796987.8A Pending CN117861083A (en) | 2023-12-25 | 2023-12-25 | High-power semiconductor laser therapeutic apparatus for fungal onychomycosis treatment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117861083A (en) |
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2023
- 2023-12-25 CN CN202311796987.8A patent/CN117861083A/en active Pending
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