CN117855033A - Laser bonding method for temporary bonding glue in wafer micro-nano processing - Google Patents
Laser bonding method for temporary bonding glue in wafer micro-nano processing Download PDFInfo
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- CN117855033A CN117855033A CN202311695089.3A CN202311695089A CN117855033A CN 117855033 A CN117855033 A CN 117855033A CN 202311695089 A CN202311695089 A CN 202311695089A CN 117855033 A CN117855033 A CN 117855033A
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- transparent substrate
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000012545 processing Methods 0.000 title claims abstract description 23
- 239000003292 glue Substances 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000000853 adhesive Substances 0.000 claims abstract description 40
- 230000001070 adhesive effect Effects 0.000 claims abstract description 40
- 230000004044 response Effects 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 30
- 238000004528 spin coating Methods 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 11
- 239000012459 cleaning agent Substances 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000002791 soaking Methods 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000009210 therapy by ultrasound Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 5
- 230000006378 damage Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 59
- 230000008569 process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 201000001320 Atherosclerosis Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004204 blood vessel Anatomy 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007699 photoisomerization reaction Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
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- Laser Beam Processing (AREA)
Abstract
The laser bonding method for the temporary bonding adhesive in the wafer micro-nano processing adopts the laser bonding method to peel off the temporary bonding adhesive, has the advantages of no contact, small damage, high efficiency and the like, and the substrate can be recycled, so that the defects of methods such as mechanical peeling, thermal sliding peeling, chemical peeling and the like are overcome, the processing cost of an ultrathin wafer can be reduced, and the yield is improved.
Description
Technical Field
The application relates to the field of wafer micro-nano processing, in particular to a laser bonding method for temporary bonding glue in wafer micro-nano processing.
Background
The chip is widely applied to various electronic devices, along with the emergence of high and new technologies such as artificial intelligence, big data, 5G, the Internet of things and the like, the demands for high-performance, small-size and multifunctional chips are also more and more urgent, and the chip integration level is improved by reducing the size of a transistor, so that the chip technology is always a core development direction. In new technologies such as 3D-IC, system in package, and heterojunction integration, the use of an ultra-thin wafer (< 100 μm) is indispensable, but as the thickness of the wafer becomes thinner and the size of the wafer becomes larger, problems such as warpage and breaking easily occur, so the holding technology of the chip is particularly important. At present, the temporary bonding/unbinding technology is a chip holding scheme which is commonly adopted, namely, firstly, a device wafer is temporarily bonded on a rigid carrier to provide mechanical support, then, the device wafer is thinned, a series of process flows such as photoetching are completed, and finally, the device wafer is peeled from the carrier to obtain an ultrathin device.
The low thermal stability of the thermal slip debonding material limits the process of subjecting the wafer to higher temperatures, mechanical stresses inevitably occur during mechanical stripping and thermal slip to remove the rigid carrier, and it is difficult to meet the processing requirements of ultra-thin wafers, and chemical methods require the cooperation of porous wafers and large amounts of solvents, with significant cost increases. The laser bonding is realized by irradiating the temporary bonding adhesive with laser to denature and lose viscosity, so that the device and the slide glass are separated, and the device has the advantages of non-contact, high efficiency, good process compatibility and the like. The infrared laser bonding mainly uses the thermal effect of laser, and temporary bonding glue is thermally decomposed to realize bonding through instantaneous high temperature, but local instantaneous high temperature easily causes thermal damage to devices. The ultraviolet laser utilizes the synergistic effect of photochemical reaction and photo-thermal process, and combines the photochemical reaction of ultraviolet laser induced photopolymerization, photodecomposition, photoisomerization and the like, so that the temperature required by de-bonding can be greatly reduced, and meanwhile, the thermal effect of ultraviolet light is smaller than that of infrared light, so that the thermal damage to devices can be effectively reduced; in addition, most materials have strong absorption to ultraviolet light, so ultraviolet laser is more suitable for laser bonding.
With the successful development of novel low-temperature ultraviolet laser response adhesives, the realization of low-temperature Jie Jian by utilizing ultraviolet laser instead of infrared laser has been widely focused by the industry, but related processes and equipment are still in a blank state; secondly, with the continuous perfection of the large-size wafer preparation process and the landing of the process line, it is important to realize faster debonding by laser scanning so as to improve the production efficiency.
Disclosure of Invention
In view of the above, it is necessary to provide a laser bonding method that achieves low processing cost and high yield in order to overcome the drawbacks of the conventional methods such as mechanical peeling, thermal slip peeling, chemical peeling, and the like.
In order to solve the problems, the following technical scheme is adopted in the application:
one of the purposes of the application is to provide a laser bonding method of temporary bonding glue in wafer micro-nano processing, which comprises the following steps:
cleaning the wafer;
coating adhesive glue on the surface of the cleaned wafer, and coating laser response glue on the transparent substrate;
fixing the wafer coated with the adhesive glue and the transparent substrate coated with the laser response glue to form a fixing assembly;
injecting a laser beam from the direction of the transparent substrate of the fixed assembly, wherein the laser beam moves on the transparent substrate until the back surface of the substrate is scanned;
and placing the fixed assembly after laser de-bonding in a response adhesive cleaning agent for cleaning, and taking out the separated wafer after cleaning.
In some embodiments, the step of cleaning the wafer specifically includes the following steps:
and sequentially ultrasonically cleaning the wafer by using acetone, absolute ethyl alcohol and deionized water, soaking the wafer by using hydrofluoric acid, ultrasonically cleaning the wafer by using ionized water after soaking, and removing water on the surface of the wafer by using pure nitrogen after ultrasonic treatment.
In some embodiments, the step of applying an adhesive to the surface of the cleaned wafer and applying a laser responsive adhesive to the substrate specifically comprises the steps of:
coating adhesive on the surface of the cleaned wafer by using a spin coating method, and baking and curing; and spin coating the laser response glue on the substrate by using a spin coating method, and baking and curing.
In some embodiments, the rotating speed is 500-1500 rpm, the thickness of the adhesive glue and the laser response glue is 100 nm-40 μm, and the baking and curing temperature is 100-300 ℃.
In some of these embodiments, the transparent substrate may be, but is not limited to, glass and sapphire, with a transmittance of greater than 95%.
In some embodiments, the step of fixing the wafer coated with the adhesive glue and the transparent substrate coated with the laser response glue to form a fixing assembly specifically includes:
and (3) using bonding equipment to thermally press and fix the wafer coated with the adhesive glue and the transparent substrate coated with the laser response glue, wherein the heating temperature of the thermally press fixing is 150-300 ℃, the pressure of the thermally press fixing is 4500-5500N, and the thermally press time of the thermally press fixing is 5-15 min.
In some embodiments, in the step of injecting a laser beam from the direction of the transparent substrate of the fixed component, the laser beam moves on the transparent substrate until the back surface of the substrate is scanned, the laser beam is a Gaussian beam output by an ultra-short pulse laser, and the power of the injected laser beam is 200mJ/cm 2 ～300mJ/cm 2 The frequency is 50 Hz-500 Hz.
In some embodiments, the fixing component after laser de-bonding is placed in a response glue cleaning agent for cleaning, and the response glue cleaning agent comprises hydrofluoric acid diluted solution or hydrochloric acid diluted solution in the step of taking out the separated wafer after cleaning.
By adopting the technical scheme, the application has the following beneficial effects:
the laser bonding method for the temporary bonding adhesive in the wafer micro-nano processing adopts the laser bonding method to peel off the temporary bonding adhesive, has the advantages of no contact, small damage, high efficiency and the like, and the substrate can be recycled, so that the defects of methods such as mechanical peeling, thermal sliding peeling, chemical peeling and the like are overcome, the processing cost of an ultrathin wafer can be reduced, and the yield is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings used in the embodiments of the present application or the description of the prior art will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a laser bonding method for temporary bonding glue in wafer micro-nano processing according to an embodiment of the present invention;
fig. 2 is a microscopic image of a glass substrate before cleaning and after laser irradiation according to an embodiment of the present invention.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and intended for the purpose of explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it should be understood that the terms "upper," "lower," "horizontal," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
For the purposes, technical solutions and advantages of the present application, the following will take the multifunctional detection of atherosclerosis in blood vessels as an example, and the present application will be further described in detail with reference to the accompanying drawings and examples.
Referring to fig. 1, a step flow chart of a laser bonding method of temporary bonding glue in wafer micro-nano processing provided in the embodiment of the present application includes the following steps:
step S110: and cleaning the wafer.
In this embodiment, in the step of cleaning the wafer, the method specifically includes the following steps:
and sequentially ultrasonically cleaning the wafer by using acetone, absolute ethyl alcohol and deionized water, soaking the wafer by using hydrofluoric acid, ultrasonically cleaning the wafer by using ionized water after soaking, and removing water on the surface of the wafer by using pure nitrogen after ultrasonic treatment.
Step S120: and coating adhesive glue on the surface of the cleaned wafer, and coating laser response glue on the transparent substrate.
In this embodiment, the step of coating the adhesive on the surface of the cleaned wafer and coating the laser response adhesive on the substrate specifically includes the following steps: coating adhesive on the surface of the cleaned wafer by using a spin coating method, and baking and curing; and spin coating the laser response glue on the substrate by using a spin coating method, and baking and curing.
Further, the rotating speed is 500-1500 rpm during spin coating, the thickness of the adhesive glue and the laser response glue is 100 nm-40 mu m, and the baking and curing temperature is 100-300 ℃.
In this embodiment, the adhesive is water-soluble high-viscosity adhesive used in industry. The laser response glue is bonding glue which can be de-bonded through laser.
In this embodiment, the transparent substrate includes, but is not limited to, glass and sapphire, and the transmittance is higher than 95%.
Step S130: the wafer coated with the adhesive paste and the transparent substrate coated with the laser responsive paste are fixed to form a fixed assembly.
In this embodiment, in the step of fixing the wafer coated with the adhesive paste and the transparent substrate coated with the laser response paste to form a fixing assembly, specifically including:
and (3) using bonding equipment to thermally press and fix the wafer coated with the adhesive glue and the transparent substrate coated with the laser response glue, wherein the heating temperature of the thermally press fixing is 150-300 ℃, the pressure of the thermally press fixing is 4500-5500N, and the thermally press time of the thermally press fixing is 5-15 min.
Step S140: and injecting a laser beam from the direction of the transparent substrate of the fixed assembly, wherein the laser beam moves on the transparent substrate until the back surface of the substrate is scanned.
In this embodiment, in the step of injecting a laser beam from the direction of the transparent substrate of the fixing assembly, the laser beam is moved on the transparent substrate until the back surface of the substrate is scanned, the laser beam is a gaussian beam output by an ultrashort pulse laser, and the power of the injected laser beam is 200
mJ/cm 2 ～300mJ/cm 2 The frequency is 50 Hz-500 Hz.
It will be appreciated that the above-described debonded sample structures can be divided into a device layer, a release layer and a transparent layer,
step S150: and placing the fixed assembly after laser de-bonding in a response adhesive cleaning agent for cleaning, and taking out the separated wafer after cleaning.
In this embodiment, in the step of placing the fixing component after laser debonding in a response gel cleaning agent for cleaning, and taking out the separated wafer after cleaning, the response gel cleaning agent includes a hydrofluoric acid diluted solution or a hydrochloric acid diluted solution.
The wafer sample structure for laser bonding provided in this embodiment may be divided into a device layer, a peeling layer and a transparent layer, and the peeling of the device layer can be achieved through a laser bonding process.
The laser bonding method for the temporary bonding adhesive in the wafer micro-nano processing adopts the laser bonding method to peel off the temporary bonding adhesive, has the advantages of no contact, small damage, high efficiency and the like, and the substrate can be recycled, so that the defects of methods such as mechanical peeling, thermal sliding peeling, chemical peeling and the like are overcome, the processing cost of an ultrathin wafer can be reduced, and the yield is improved.
For a further understanding of the present invention, the present invention is described below with reference to the examples, which are only illustrative of the features and advantages of the present invention and are not intended to limit the scope of the claims of the present invention.
Examples
Step 1, ultrasonically cleaning a wafer for 30min sequentially by using acetone, absolute ethyl alcohol and deionized water, soaking the wafer for 10min by using hydrofluoric acid solution of hydrofluoric acid and deionized water of which the ratio is 1:100-1:1000, ultrasonically cleaning the wafer for 10min by using ionized water after finishing, and removing water on the surface of the wafer by using pure nitrogen after finishing ultrasonic treatment;
step 2, coating a layer of adhesive on the wafer cleaned in the step 1 by using a spin coating method, spin-coating for 30s at a rotating speed of 500rpm, spin-coating for 30s at 1000rpm, then placing the wafer on a hot table, baking at 115 ℃ for 5min, evaporating the solvent in the wafer, and baking at 220 ℃ for 5min to solidify the wafer to finally obtain a film with a thickness of about 30 mu m; coating a layer of response adhesive on a glass substrate by using a spin coating method, spin-coating for 5s at a rotating speed of 500rpm, spin-coating for 30s at 1500rpm, then placing the glass substrate on a hot table, baking at 115 ℃ for 5min, evaporating the solvent in the glass substrate, and baking at 300 ℃ for 5min to solidify the glass substrate to finally obtain a film with a thickness of about 300 nm;
step 3, using bonding equipment to fix the wafer with the adhesive glue and the glass substrate with the laser response glue in the step 2 together at the temperature of 200 ℃ and the pressure of 5000N for 10min in a hot pressing mode;
step 4, 355nm ultra-short ultraviolet pulse laser emitted by a laser system is injected from the direction of the transparent substrate, the laser frequency is 100Hz, and the power is 250mJ/cm 2 The laser continuously moves on the substrate along the S-shaped route until the back of the whole substrate is scanned;
and 5, placing the module subjected to laser bonding in the step 4 into a matched response adhesive cleaning agent for soaking and cleaning for 30min, and taking out the separated wafer after cleaning.
Referring to fig. 2, a microscopic image (b) of the glass substrate before (a) and after laser irradiation can be obtained after cleaning, so that the bonding glue can be separated.
It will be understood that the technical features of the above-described embodiments may be combined in any manner, and that all possible combinations of the technical features in the above-described embodiments are not described for brevity, however, they should be considered as being within the scope of the description provided in the present specification, as long as there is no contradiction between the combinations of the technical features.
The foregoing description of the preferred embodiments of the present application has been provided for the purpose of illustrating the general principles of the present application and is not meant to limit the scope of the present application in any way. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application, and other embodiments of the present application, which may occur to those skilled in the art without the exercise of inventive faculty, are intended to be included within the scope of the present application, based on the teachings herein.
Claims (8)
1. The laser bonding method of the temporary bonding glue in the wafer micro-nano processing is characterized by comprising the following steps of:
cleaning the wafer;
coating adhesive glue on the surface of the cleaned wafer, and coating laser response glue on the transparent substrate;
fixing the wafer coated with the adhesive glue and the transparent substrate coated with the laser response glue to form a fixing assembly;
injecting a laser beam from the direction of the transparent substrate of the fixed assembly, wherein the laser beam moves on the transparent substrate until the back surface of the substrate is scanned;
and placing the fixed assembly after laser de-bonding in a response adhesive cleaning agent for cleaning, and taking out the separated wafer after cleaning.
2. The method for laser debonding of temporary bond paste in micro-nano processing of a wafer according to claim 1, wherein the step of cleaning the wafer comprises the steps of:
and sequentially ultrasonically cleaning the wafer by using acetone, absolute ethyl alcohol and deionized water, soaking the wafer by using hydrofluoric acid, ultrasonically cleaning the wafer by using ionized water after soaking, and removing water on the surface of the wafer by using pure nitrogen after ultrasonic treatment.
3. The method for laser debonding of temporary bonding glue in micro-nano processing of wafer according to claim 1, wherein the step of coating the adhesive glue on the surface of the cleaned wafer and coating the laser response glue on the substrate comprises the steps of:
coating adhesive on the surface of the cleaned wafer by using a spin coating method, and baking and curing; and spin coating the laser response glue on the substrate by using a spin coating method, and baking and curing.
4. The laser bonding method of temporary bonding glue in wafer micro-nano processing according to claim 3, wherein the rotating speed is 500-1500 rpm during spin coating, the thickness of the adhesive glue and the laser response glue is 100 nm-40 μm, and the baking and curing temperature is 100-300 ℃.
5. A method of laser debonding of temporary bonding glue in wafer micro-nano processing according to claim 3, wherein the transparent substrate includes, but is not limited to, glass and sapphire, and has a transmittance of greater than 95%.
6. The method of laser debonding of temporary bonding glue in wafer micro-nano processing of claim 1, wherein in the step of affixing the wafer coated with the adhesive glue and the transparent substrate coated with the laser responsive glue to form an affixed assembly, specifically comprising:
and (3) using bonding equipment to thermally press and fix the wafer coated with the adhesive glue and the transparent substrate coated with the laser response glue, wherein the heating temperature of the thermally press fixing is 150-300 ℃, the pressure of the thermally press fixing is 4500-5500N, and the thermally press time of the thermally press fixing is 5-15 min.
7. The method for laser debonding of temporary bond paste in micro-nano processing of wafer as set forth in claim 1, wherein in the step of injecting a laser beam from a direction of a transparent substrate of said fixed member, said laser beam is a Gaussian beam outputted by an ultra-short pulse laser, and a power of the injected laser beam is 200mJ/cm, said laser beam is moved over said transparent substrate until a back surface of said substrate is scanned 2 ～300mJ/cm 2 The frequency is 50 Hz-500 Hz.
8. The method for laser debonding of temporary bonding glue in micro-nano processing of wafer according to claim 1, wherein in the step of cleaning the fixing component after debonding by laser in a response glue cleaning agent, the response glue cleaning agent comprises hydrofluoric acid diluted solution or hydrochloric acid diluted solution, and the separated wafer is taken out after cleaning.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311695089.3A CN117855033A (en) | 2023-12-11 | 2023-12-11 | Laser bonding method for temporary bonding glue in wafer micro-nano processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311695089.3A CN117855033A (en) | 2023-12-11 | 2023-12-11 | Laser bonding method for temporary bonding glue in wafer micro-nano processing |
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| Publication Number | Publication Date |
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| CN117855033A true CN117855033A (en) | 2024-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311695089.3A Pending CN117855033A (en) | 2023-12-11 | 2023-12-11 | Laser bonding method for temporary bonding glue in wafer micro-nano processing |
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| Country | Link |
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| CN (1) | CN117855033A (en) |
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- 2023-12-11 CN CN202311695089.3A patent/CN117855033A/en active Pending
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