CN117850167A

CN117850167A - Electron beam direct writing device and electron beam direct writing system

Info

Publication number: CN117850167A
Application number: CN202311606156.XA
Authority: CN
Inventors: 刘强; 王诗男
Original assignee: Shanghai Integrated Circuit Materials Research Institute Co ltd
Current assignee: Shanghai Integrated Circuit Materials Research Institute Co ltd
Priority date: 2023-11-28
Filing date: 2023-11-28
Publication date: 2024-04-09

Abstract

The invention provides an electron beam direct-write device and an electron beam direct-write system, comprising: an emission regulation unit and X electron beam source emission units; x is an integer of 1 or more; the emission regulation unit is used for generating Y gating signals, wherein Y is an integer greater than or equal to 2; each electron beam source emission unit comprises a conduction signal generation module, a conduction signal holding module and an electron beam generation module; y control ends of the conduction signal generation module are arranged in one-to-one correspondence with Y gating signals; the conduction signal generation module is used for generating a conduction signal when receiving the corresponding gating signal at the same time; the conduction signal holding module receives the gating signal and is used for prolonging the effective time of the conduction signal; the electron beam generating module receives a conduction signal for prolonging the effective time, and emits corresponding electron beams in the effective time of the conduction signal. The invention is used for solving the problems of low direct writing speed and the like caused by the response time of the electron beam source in response to the control instruction in the direct writing process of the electron beam.

Description

Electron beam direct writing device and electron beam direct writing system

Technical Field

The present invention relates to photolithography, and more particularly, to an electron beam direct-write device and an electron beam direct-write system.

Background

Electron Beam Lithography (EBL) is a type of maskless lithography that uses focused electrons of very short wavelength to directly act on the electron-sensitive photoresist (resist) surface to draw micro-nano structures that conform to the design pattern. The electron beam lithography system has the advantages of ultra-high resolution (pattern transfer with limit size less than 10 nm) and flexible drawing (direct writing without mask), but has the problems of low exposure efficiency and complex control.

Electron beam lithography is required to achieve high-speed direct writing with a rapid increase in the amount of pattern data, while ensuring finer and more accurate imaging of the patterns of the photomask and the structural patterns of the device layers. Therefore, in order to pursue the accuracy of pattern imaging, it is necessary to reduce the electron beam spot, but this results in a reduction in the current of the individual electron beams, resulting in a longer time for direct writing of the electron beams. If the integral writing time is ensured by the joint writing of a plurality of electron beams, a certain instruction blank period exists in the period of refreshing the control instruction due to the fact that the control instruction is complex, and the problem that the direct response speed of the electron beams is too slow is caused.

Based on the above, the problem that the direct writing speed is slow due to the fact that the response time of the electron beam source to the control command is poor in the direct writing process of the electron beam is urgent to be solved.

It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an electron beam direct-write device and an electron beam direct-write system, which are used for solving the problems of low direct-write speed and the like caused by a response time difference of an electron beam source in response to a control command in the electron beam direct-write process in the prior art.

To achieve the above and other related objects, the present invention provides an electron beam direct-write device comprising: an emission regulation unit and X electron beam source emission units; x is an integer of 1 or more;

the emission regulation and control unit is used for generating Y gating signals, wherein Y is an integer greater than or equal to 2;

each electron beam source emission unit is respectively connected with the emission regulation and control unit; any electron beam source emission unit in each electron beam source emission unit is conducted when Y gating signals are received at the same time, and then corresponding electron beams are emitted;

each electron beam source emission unit comprises a conduction signal generation module, a conduction signal holding module and an electron beam generation module; y control ends of the conduction signal generation module are arranged in one-to-one correspondence with Y gating signals; the conduction signal generation module is used for generating a conduction signal when receiving corresponding gating signals at the same time; the conduction signal holding module receives the conduction signal and is used for prolonging the effective time of the conduction signal; the electron beam generating module receives the conduction signal for prolonging the effective time and emits corresponding electron beams in the effective time of the conduction signal.

Alternatively, when y=2, the emission control unit 111 includes i first control lines, j second control lines; i. j is an integer greater than or equal to 1 and ixj is greater than or equal to X; each first control line and each second control line are arranged in a crossing way, and each first control line respectively generates a first gating signal, and each second control line respectively generates a second gating signal; the first control end of each electron beam source emission unit is respectively connected with a corresponding first control line, the second control end is respectively connected with a corresponding second control line, and the conduction signal is output when the corresponding first gating signal and the corresponding second gating signal are received at the same time.

Optionally, the on signal generating module includes a first transistor;

the first end and the second end of the first transistor are respectively used as a first control end and a second control end of the conduction signal generation module, and the conduction signal is output based on the first gating signal and the second gating signal which are received simultaneously.

Optionally, when y=4, the emission control unit 111 further includes i third control lines and j fourth control lines; each third control line respectively generates a third gating signal; each fourth control line respectively generates a fourth gating signal; each electron beam source emission unit is respectively connected with the third control line and the fourth control line, and outputs the conduction signal when the corresponding first gating signal, the corresponding second gating signal, the corresponding third gating signal and the corresponding fourth gating signal are simultaneously received.

Optionally, the on signal generating module includes a second transistor and a third transistor;

the first end and the second end of the second transistor are respectively used as a first control end and a second control end of the conduction signal generation module;

the first end and the second end of the third transistor are respectively used as a third control end and a fourth control end of the conduction signal generation module; and the third end of the second transistor and the third end of the third transistor are connected and output the conducting signal.

Optionally, each electron beam source emission unit 112 further includes an auxiliary clamping module; the auxiliary clamping module is arranged between the conduction signal holding module and the electron beam generating module and used for stabilizing the voltage of the output signal of the conduction signal holding module.

Optionally, the auxiliary clamping module includes a diode, a fourth transistor, and a resistor; the first end of the fourth transistor is connected with the conduction signal holding module, the second end of the fourth transistor is connected to the first working voltage through a resistor, and the third end of the fourth transistor is connected to the electron beam generating module; and the cathode of the diode is connected with the third end of the fourth transistor, and the anode of the diode is grounded.

Optionally, the electron beam generating module includes a fifth transistor and an electron beam source;

the first end of the fifth transistor receives the prolonged conduction signal, the second end of the fifth transistor is connected with a first working voltage, and a switch control signal is provided for the electron beam source in the effective time of the conduction signal;

the first end of the electron beam source receives the switch control signal, the second end is connected with the second working voltage, and the third end outputs the electron beam.

Optionally, the on signal holding module is set to a clamping structure; the first end of the clamping structure receives the conducting signal, and the second end of the clamping structure is connected with the first end of the fifth transistor.

Optionally, the clamping structure is configured as an SRAM memory.

Optionally, the on signal holding module is configured as a capacitor; the first polar plate of the capacitor receives the conducting signal, and the second polar plate is connected with the third end of the fifth transistor.

To achieve the above and other related objects, the present invention provides an electron beam direct writing system, characterized in that: the electron beam direct writing system comprises a deflection circuit and the electron beam direct writing device;

the deflection circuit includes at least one set of electrodes; each electrode is arranged around the emitted electron beam, and the movement path of the electron beam is regulated based on the voltage loaded by each electrode.

Optionally, the electron beam direct writing system further comprises a bias signal generating circuit; the bias signal generating circuit is respectively connected with each electron beam source emitting unit and the emission regulating and controlling unit, and is used for selecting and conducting the corresponding electron beam source emitting unit based on the emission regulating and controlling unit so as to emit electron beams, and regulating bias voltage in the electron beam source emitting unit so as to regulate and control the beam intensity of the emitted electron beams.

As described above, the electron beam direct-write device and the electron beam direct-write system of the present invention have the following advantageous effects:

1. according to the electron beam direct-write device and the electron beam direct-write system, the effective time of the conduction signal is delayed by arranging the conduction signal holding module, so that the problems of low direct-write speed and the like caused by response time of an electron beam source in response to a control instruction due to the fact that the intermittence exists between signal switching of the emission regulation unit are avoided.

2. The electron beam direct writing device and the electron beam direct writing system carry out gating control on each electron beam through the emission regulation and control unit, so that the wiring density and wiring difficulty of each electron beam source emission unit are reduced, the calculation force requirement of a computer control end is also reduced, and the device is easier to realize in equipment manufacture.

3. The electron beam direct writing device and the electron beam direct writing system are provided with the independent control circuit for each electron beam source, so that the electron beam sources can keep a stable working state, and high-efficiency direct writing is realized.

Drawings

Fig. 1 is a schematic diagram of an electron beam writing system according to the present invention.

Fig. 2 is a schematic diagram of an electron beam direct-write device according to the present invention.

Fig. 3 is a schematic diagram showing a structure of a turn-on signal holding module of the electron beam source emitting unit of fig. 2.

Fig. 4 is a schematic structural diagram of another on signal holding module of the electron beam source emitting unit of fig. 2.

Fig. 5 is a schematic view showing the structure of the electron beam source of fig. 2.

Fig. 6 is a schematic diagram showing another structure of the electron beam direct-write device of the present invention.

Fig. 7 is a schematic diagram showing a structure of a turn-on signal holding module of the electron beam source emitting unit of fig. 6.

Fig. 8 is a schematic diagram showing a structure of another turn-on signal holding module of the electron beam source emitting unit of fig. 6.

Fig. 9 is a schematic diagram showing the structure of the deflection circuit of the present invention.

Description of element reference numerals

00. Machine table

01. Wafer processing layer

1. Electron beam direct writing system

11. Electron beam direct writing device

111. Emission control unit

112. Electron beam source emission unit

1121. Conduction signal generation module

1122. Conduction signal holding module

1123. Electron beam generating module

1123a Electron Beam Source

1124. Capacitor with a capacitor body

12. Deflection circuit

121. First deflection unit

122. Second deflection unit

123. Shielding structure

13. Bias signal generating circuit

21. Electron beam direct writing device

211. Electron beam source emission unit

2111. Conduction signal generation module

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.

Please refer to fig. 1-9. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

Example 1

As shown in fig. 1 to 5, the present invention provides an electron beam direct-write device 11 including: an emission control unit 111 and X electron beam source emission units 112; x is an integer of 1 or more;

as shown in fig. 1, the emission control unit 111 is configured to generate Y kinds of strobe signals, where Y is an integer greater than or equal to 2.

As an example, as shown in fig. 1 and 2, when y=2, the emission regulating unit 111 generates 2 kinds of gate signals. The emission regulation unit 111 comprises i first control lines and j second control lines; i. j is an integer greater than or equal to 1 and ixj is greater than or equal to X; each first control line and each second control line are arranged in a crossing way, and each first control line respectively generates a first gating signal, and each second control line respectively generates a second gating signal; the first control end of each electron beam source emission unit 112 is respectively connected with a corresponding first control line, and the second control end is respectively connected with a corresponding second control line; any electron beam source emitting unit 112 receives the corresponding first strobe signal and the corresponding second strobe signal at the same time to output the on signal.

In this embodiment, if i and j are set to 2, the emission control unit 111 includes 2 first control lines and 2 second control lines, so that up to 4 (i.e. 2×2=4) electron beam source emission units 112 can be controlled, and each electron beam source emission unit is connected to a corresponding first control line and a corresponding second control line, so as to emit a signal when the connected first control lines and second control lines are all turned on. In this embodiment, as shown in fig. 2, the emission control unit 111 includes 1 first control line i1 and 1 second control line j1.

In this embodiment, in order to facilitate wiring, when there are a plurality of first control lines and a plurality of second control lines, the first control lines are parallel to each other, and the second control lines are parallel to each other. The included angle between each first control line and each second control line is a right angle.

It should be noted that, in the present invention, a lattice array may be formed by the intersecting structure between the plurality of first control lines and the plurality of second control lines, so that each electron beam source emitting unit 112 is also arranged in an array configuration. Therefore, the more complex the crossing relationship between the first control line and the second control line, the greater the number of dot patterns that can be formed. In the present invention, the electron beam source emitting units 112 can be operated in at least two control dimensions (a first control line and a second control line) in a gating manner, so that the accuracy of direct writing is improved.

As shown in fig. 1, each electron beam source emission unit 112 is connected to an emission control unit 111, respectively; any one of the electron beam source emitting units 112 is turned on when receiving Y kinds of strobe signals at the same time, so as to emit corresponding electron beams.

Specifically, as shown in fig. 3, each electron beam source emission unit 112 includes an on signal generation module 1121, an on signal holding module 1122, and an electron beam generation module 1123.

As an example, the Y control terminals of the on signal generating module 1121 are arranged in one-to-one correspondence with Y strobe signals; the on signal generating module 1121 is configured to generate an on signal when receiving a corresponding strobe signal at the same time. In this embodiment, if Y is set to be equal to 2, the two control terminals of the on signal generating module 1121 receive the first strobe signal and the second strobe signal at the same time, and then generate an on signal and output the on signal to the latter module.

In this embodiment, the on signal generating module 1121 includes a first transistor T1; the first and second terminals of the first transistor T1 serve as the first and second control terminals of the turn-on signal generating module 1121, respectively, and output the turn-on signal based on the first and second gate signals received simultaneously.

In this embodiment, the first transistor T1 is a MOS transistor. In practice, the first transistor T1 may be further configured as a BJT, an IGBT, or the like, and the actual connection manner thereof may be based on the device configuration in practical use, which is not limited to the present embodiment.

As an example, the on signal holding module 1122 receives the strobe signal for extending the on signal's on time.

In this embodiment, as shown in fig. 3, the on signal holding module 1122 is configured as a clamp structure; in this embodiment, the electron beam generating module 1123 includes a fifth transistor T5 and an electron beam source 1123a, wherein a first end of the fifth transistor T5 receives the extended on signal, a second end is connected to the first operating voltage VDD1, a third end is connected to the first end of the electron beam source 1123a, a first end of the clamping structure receives the on signal, and a second end is connected to the first end of the fifth transistor T5. And the clamping structure clamps the conduction signal when the voltage of the received conduction signal is reduced so as to prolong the effective time of the conduction signal. In this embodiment, the clamp structure may be configured as a Static RAM (SRAM), and the potential of the output on signal may be kept stable without outputting a new on signal by the on signal generating module 1121. In addition, the clamping structure may be configured as a flip-flop having a similar function, so long as the structure that can clamp the on signal to extend the effective time of the on signal is the protection scope of the present embodiment.

In another embodiment, as shown in fig. 4, the turn-on signal holding module is provided as a capacitor 1124. A first plate of the capacitor 1124 receives the on signal, and a second plate is connected to a third terminal of the fifth transistor T5. In this embodiment, when the fifth transistor T5 is set as a PMOS transistor, the first plate of the capacitor 1124 is connected to the gate of the PMOS transistor, and the second plate is connected to the drain of the PMOS transistor. When the first transistor T1 is turned off, the electric charge stored in the capacitor 1124 stabilizes the gate potential of the fifth transistor T5 for a certain period of time, so as to realize a stable operation of the electron beam generating module 1123, and further realize that the electron beam source 1123a maintains a stable on or off state. The problem of unstable and discontinuous electron beam writing during the refresh period of the emission control unit 111 is avoided.

As an example, the electron beam generating module 1123 receives the on signal for an extended effective time, and emits a corresponding electron beam during the effective time of the on signal

In the present embodiment, the electron beam generating module 1123 includes a fifth transistor T5 and an electron beam source 1123a; a first end of the fifth transistor T5 receives the extended on signal, a second end is connected to the first operating voltage VDD1, a third end is connected to the first end of the electron beam source 1123a, and a switch control signal is provided to the electron beam source 1123a during an active time of the on signal; a second end of the electron beam source 1123a is connected to the second operating voltage VDD2, and a third end outputs the electron beam.

In this embodiment, as shown in fig. 5, the first end of the electron beam source 1123a receives the switch control signal, the second end (cathode) is connected to the second operating voltage VDD2, and the third end (anode) outputs the electron beam. In this embodiment, the source of the electron beam source 1123a is connected to the second operating voltage VDD2, the gate is connected to the output terminal of the on signal generating module 112a, and the drain is used as the output terminal. In this embodiment, the source electrode of the electron beam source 1123a is used as the cathode, and the drain electrode of the electron beam source 1123a is used as the anode, so that it is ensured that electrons have higher energy to transition through voltage charging under the condition that the electron beam source 1123a is turned on, and then the electron beam is emitted. In the present embodiment, the electron beam source 1123a, which is not simultaneously gated by the first and second gating signals, remains in an off state. In another embodiment, the electron beam source 1123a, which is not simultaneously gated by the first and second gating signals, maintains a stable electron beam emission intensity for continuous emission. The invention introduces the emission regulation unit 111, can realize stable output of control signals, and can effectively improve the use efficiency of electron beams. Under the condition that continuous direct writing is required, the electron beam can be kept on stably, the duty ratio of an on state close to 100% is realized, and the direct writing speed is effectively improved.

In another example, the gate of the electron beam source 1123a may be connected to the second operating voltage VDD2, and the source receives the switch control signal, so as to realize stable emission of the electron beam. In this embodiment, the potential of the second working voltage VDD2 may be set to be a common bias potential provided by the common electrode, or may be a special bias potential provided by the bias circuit, and in this embodiment, the magnitude of the bias voltage may be adjusted based on the bias signal generating circuit 13 to regulate the beam intensity of the emitted electron beam. In addition, each electron beam source emitting unit 112 may further be provided with a beam control module (not shown in the figure) and loaded on the delayed on signal outputted from the on signal holding module 1122 to adjust the level state of the on signal, thereby further realizing the adjustment of the intensity of the emitted electron beam. When the beam intensity of the single electron beam source 1123a is greatly different from the beam intensities of the electron beams emitted by the other electron beam sources 1123a, the beam intensity of the emitted electron beam can be regulated and controlled by adjusting the voltage received by the electron beam source 1123a through the beam control module, so that the performance of the electron beam is close to the average value of the electron beam source array. Or when it is desired to increase or decrease the beam current of the electron beam source 1123a in a specific operation mode, the beam current intensities of the respective electron beams may be adjusted by the beam current control module, respectively.

Meanwhile, the anode in the present embodiment may be partially prepared on the electron beam source 1123a, may be a separate component structure, or may be composed of the anode structure on the electron beam source 1123a and an external separate anode structure component together; based on the above, the anode may be a single-layer structure or a composite-layer structure, and each layer of anode structure may be applied with a voltage of different intensity.

It should be further noted that the X electron beam source emitting units 112 and the emission control unit 111 may be fabricated on the same wafer substrate, or may be combined together in a later 3D packaging integrated manner, which is not limited to this embodiment.

As an example, each electron beam source emission unit 112 further includes an auxiliary clamp module 1125; the auxiliary clamping module 1125 is disposed between the conductive signal holding module 1122 and the electron beam generating module 1123, and is configured to stabilize the voltage of the output signal of the conductive signal holding module 1122, thereby avoiding temperature drift and noise interference.

In this embodiment, the auxiliary clamping module includes a diode D, a fourth transistor T4, and a resistor R; the first end of the fourth transistor T4 is connected to the on signal holding module 1122, the second end is connected to the first operating voltage VDD1 via the resistor R, and the third end is connected to the electron beam generating module 1123; and the cathode of the diode D is connected with the third end of the fourth transistor T3, and the anode of the diode D is grounded. Through the voltage division of the resistor R and the unidirectional conductive characteristic of the diode D, the voltage value of the output signal of the conduction signal holding module 1122 is ensured to be stable, and further the problems that the voltage value is unstable and the electron beam effect generated finally is influenced due to the interference among the voltages of all nodes in the system are avoided.

It should be noted that, the auxiliary clamping module 1125 may be configured in other configurations, for example, voltage clamping through a plurality of resistors arranged in series or clamping through other diodes, and any configuration of the auxiliary clamping module 1125 capable of controlling the final output voltage is within the scope of the present embodiment.

Example two

As shown in fig. 6 to 8, the present embodiment provides an electron beam direct-write device 21, which is basically the same as the first embodiment, except that the number of strobe signals of the emission control units is different and the number of control ends of each electron beam source emitting unit 211 is different.

Specifically, as shown in fig. 6, when y=4, the emission control unit further includes i third control lines and j fourth control lines; each third control line respectively generates a third gating signal; each fourth control line respectively generates a fourth gating signal; each electron beam source emission unit is respectively connected with the third control line and the fourth control line, and is conducted to emit corresponding electron beams when corresponding first gating signals, corresponding second gating signals, corresponding third gating signals and corresponding fourth gating signals are received at the same time.

As an example, as shown in fig. 6, in the present embodiment, the emission control unit includes 1 first control line, 1 second control line, 1 third control line, and 1 fourth control line (in the present embodiment, the first control line i1, the second control line j1, the third control line i2, and the fourth control line j2, respectively, as shown in fig. 6).

In this embodiment, when there are a plurality of first control lines, second control lines, third control lines and fourth control lines, the first control lines are parallel to each other, and the second control lines are parallel to each other; the third control lines are parallel to the first control lines, and the fourth control lines are parallel to the second control lines. In this embodiment, for convenience in arrangement, an included angle between the first control line and the second control line is a right angle.

Specifically, as shown in fig. 6 and 7, each electron beam source emitting unit 211 includes 4 control terminals that respectively receive corresponding strobe signals.

As an example, as shown in fig. 7, each electron beam source emission unit 211 includes an on signal generation module 2111, an on signal holding module 1122, and an electron beam generation module 1123.

In the present embodiment, the on signal generating module 2111 includes a second transistor T2 and a third transistor T3; the first end and the second end of the second transistor T2 are respectively used as a first control end and a second control end of the conduction signal generation module; the first end and the second end of the third transistor T3 are respectively used as a third control end and a fourth control end of the turn-on signal generating module 2111; the third terminal of the second transistor T2 and the third terminal of the third transistor T3 are connected and serve as an output terminal of the turn-on signal generating module 2111, so as to output a turn-on signal to a subsequent module.

In this embodiment, the second transistor T2 and the third transistor T3 may be MOS transistors. In another embodiment, the second transistor T2 and the third transistor T3 may be further configured as BJT transistors and IGBT transistors, and the actual connection manner may be based on the actual device configuration, which is not limited to this embodiment.

In this embodiment, the on signal holding module 1122 is configured as a clamping structure, and the specific connection manner thereof is shown in fig. 7; in another embodiment, the on signal holding module is configured as a capacitor 1124, as shown in FIG. 8; the connection manner of the two conducting signal holding modules is basically the same as that of the first embodiment, and is not described in detail herein.

The electron beam generating module 1123 of the present embodiment is substantially the same as that of the first embodiment, and will not be described here again.

Example III

As shown in fig. 1, the present embodiment provides an electron beam direct writing system 1 including: the deflection circuit 12 and the e-beam direct-write device 11 as in the first embodiment or the e-beam direct-write device 21 as in the second embodiment.

In particular, the deflection circuit 12 includes at least one set of electrodes; each electrode surrounds the emitted electron beam respectively, and the motion path of the electron beam is regulated and controlled based on the voltage loaded by each electrode.

As an example, as shown in fig. 9, the deflection circuit 12 includes at least a first deflection unit 121; the first deflection unit 121 comprises a set of electrodes; the electrode surrounds the electron beam emitted. The magnetic field generated by each group of electrodes is regulated and controlled by regulating the bias voltage on each group of electrodes. Each electron beam is deflected by a magnetic field generated by the first deflection unit 121.

As an example, as shown in fig. 9, the deflection circuit 12 further includes a second deflection unit 122. The second deflection unit 122 comprises a set of electrodes arranged around the emitted electron beam. The electron beam passing through the first deflection unit 121 is deflected twice again by the magnetic field generated by the second deflection unit 122, thereby reaching a preset position.

It should be noted that, the first deflection unit 121 may be used to deflect the movement path of the electron beam greatly, and the second deflection unit 122 may be used to deflect the movement path of the electron beam slightly, so as to control the position reached by the electron beam more accurately. In this embodiment, the emitted electron beam finally reaches the wafer processing layer 01 provided on the upper surface of the machine table 00. The wafer processing layer 01 may be provided as a patterning mask layer or a wafer substrate. In this embodiment, the voltage on each electrode in the first deflection unit 121 and the second deflection unit 122 is adjusted to control the electron beam emitted by each electron beam source 1123a to reach the preset position of the machine 00, thereby controlling the pattern direct writing.

It should be further noted that the first deflection unit 121 and/or the second deflection unit 122 may also be provided as magnetic coils, which are provided as the periphery of the movement path of the electron beam, enabling to effectively adjust the deflection position of the electron beam by means of the voltage signal.

In the present embodiment, a shielding structure 123 is further provided between the first deflection unit 121 and the second deflection unit 123. The shielding structure 123 is a shielding plate provided with a gap, and the intermittent position is set at a preset path position of the electron beam after passing through the first deflection unit 121. The shielding plate is used for shielding redundant electron beams and electron beams which do not accord with a preset path, and further controlling the quantity and the movement angle of the electron beams entering the second deflection unit 123.

As an example, as shown in fig. 1, the electron beam writing system 1 further includes a bias signal generating circuit 13; the bias signal generating circuit 13 is respectively connected to each electron beam source emitting unit 112 and the emission control unit 111, selectively turns on the corresponding electron beam source emitting unit 112 based on the emission control unit 111 to emit electron beams, and adjusts bias voltages in the electron beam source emitting units 112 to control beam intensities of the emitted electron beams. In the present embodiment, the first operating voltage VDD1 and the second operating voltage VDD2 can be generated and output by the bias signal generating circuit 13.

In this embodiment, the electron beam direct writing system 1 further includes an adjusting unit; the adjusting unit is connected to the bias signal generating circuit 12 and is used for generating a control signal to regulate the voltage output by the bias signal generating circuit 12.

According to the embodiment, the emission control unit 111 is subjected to gating control, and the emission control unit 111 is divided into two types of control lines, so that the wiring density and wiring difficulty of each electron beam source emission unit 111 are reduced, the calculation power requirement of an adjustment unit (such as a computer control end) is also reduced, and the implementation is easier in equipment manufacturing. Meanwhile, in this embodiment, an independent control circuit is configured for each electron beam source 1123a, so that the electron beam source 1123a can maintain a stable operating state, and high-efficiency direct writing can be realized. In addition, the effective time of the on signal is delayed by the on signal holding module 1122 in this embodiment, so that the electron beam generating module 1123 can still keep stable voltage transmitting signal when the on signal generating module 1121 turns off the output on signal, and the discontinuity of the direct writing process caused by the fact that the electron beam generating module 1123 rapidly responds to the signal change state of the emission control unit 111 due to the intermittence between the signal switching of the emission control unit 111 is avoided.

In summary, the present invention provides an electron beam direct-write device and an electron beam direct-write system, comprising: an emission regulation unit and X electron beam source emission units; x is an integer of 1 or more; the emission regulation unit is used for generating Y gating signals, wherein Y is an integer greater than or equal to 2; each electron beam source emission unit comprises a conduction signal generation module, a conduction signal holding module and an electron beam generation module; y control ends of the conduction signal generation module are arranged in one-to-one correspondence with Y gating signals; the conduction signal generation module is used for generating a conduction signal when receiving the corresponding gating signal at the same time; the conduction signal holding module receives the gating signal and is used for prolonging the effective time of the conduction signal; the electron beam generating module receives a conduction signal for prolonging the effective time, and emits corresponding electron beams in the effective time of the conduction signal. The invention is used for solving the problems of low direct writing speed and the like caused by the response time of the electron beam source in response to the control instruction in the direct writing process of the electron beam. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims

1. An electron beam direct write apparatus, characterized in that the electron beam direct write apparatus comprises: an emission regulation unit and X electron beam source emission units; x is an integer of 1 or more;

2. The electron beam direct write device according to claim 1, characterized in that: when y=2, the emission control unit 111 includes i first control lines, j second control lines; i. j is an integer greater than or equal to 1 and ixj is greater than or equal to X; each first control line and each second control line are arranged in a crossing way, and each first control line respectively generates a first gating signal, and each second control line respectively generates a second gating signal; the first control end of each electron beam source emission unit is respectively connected with a corresponding first control line, the second control end is respectively connected with a corresponding second control line, and the conduction signal is output when the corresponding first gating signal and the corresponding second gating signal are received at the same time.

3. The electron beam direct write device according to claim 2, characterized in that: the on signal generating module comprises a first transistor;

4. The electron beam direct write device according to claim 2, characterized in that: when y=4, the emission control unit 111 further includes i third control lines, j fourth control lines; each third control line respectively generates a third gating signal; each fourth control line respectively generates a fourth gating signal; each electron beam source emission unit is respectively connected with the third control line and the fourth control line, and outputs the conduction signal when the corresponding first gating signal, the corresponding second gating signal, the corresponding third gating signal and the corresponding fourth gating signal are simultaneously received.

5. The electron beam direct write device according to claim 4, characterized in that: the on signal generating module comprises a second transistor and a third transistor;

6. The electron beam direct write device according to claim 1, characterized in that: each electron beam source emission unit 112 further includes an auxiliary clamping module; the auxiliary clamping module is arranged between the conduction signal holding module and the electron beam generating module and used for stabilizing the voltage of the output signal of the conduction signal holding module.

7. The electron beam direct write device according to claim 6, characterized in that: the auxiliary clamping module comprises a diode, a fourth transistor and a resistor;

the first end of the fourth transistor is connected with the conduction signal holding module, the second end of the fourth transistor is connected to the first working voltage through a resistor, and the third end of the fourth transistor is connected to the electron beam generating module;

and the cathode of the diode is connected with the third end of the fourth transistor, and the anode of the diode is grounded.

8. The electron beam direct-write device according to claims 1 to 7, characterized in that: the electron beam generating module comprises a fifth transistor and an electron beam source;

9. The electron beam direct write device according to claim 8, characterized in that: the conduction signal holding module is arranged to be of a clamping structure; the first end of the clamping structure receives the conducting signal, and the second end of the clamping structure is connected with the first end of the fifth transistor.

10. The electron beam direct write device according to claim 9, characterized in that: the clamping structure is arranged as an SRAM memory.

11. The electron beam direct write device according to claim 8, characterized in that: the conduction signal holding module is arranged as a capacitor; the first polar plate of the capacitor receives the conducting signal, and the second polar plate is connected with the third end of the fifth transistor.

12. An electron beam direct writing system, characterized by: the electron beam direct writing system comprises a deflection circuit and an electron beam direct writing device according to any one of claims 1 to 11;

13. The electron beam direct write system of claim 12, wherein: the electron beam direct writing system further comprises a bias signal generating circuit;

the bias signal generating circuit is respectively connected with each electron beam source emitting unit and the emission regulating and controlling unit, and is used for selecting and conducting the corresponding electron beam source emitting unit based on the emission regulating and controlling unit so as to emit electron beams, and regulating bias voltage in the electron beam source emitting unit so as to regulate and control the beam intensity of the emitted electron beams.