CN117845328A - Method for preparing monocrystalline silicon by using silane gas - Google Patents
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- CN117845328A CN117845328A CN202310562787.XA CN202310562787A CN117845328A CN 117845328 A CN117845328 A CN 117845328A CN 202310562787 A CN202310562787 A CN 202310562787A CN 117845328 A CN117845328 A CN 117845328A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 47
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910000077 silane Inorganic materials 0.000 title claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 118
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 81
- 239000007788 liquid Substances 0.000 claims abstract description 57
- 239000010453 quartz Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000843 powder Substances 0.000 claims abstract description 32
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 22
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000004321 preservation Methods 0.000 claims abstract description 6
- 239000002210 silicon-based material Substances 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 25
- 230000001681 protective effect Effects 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 7
- 238000010899 nucleation Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 230000009257 reactivity Effects 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 7
- 238000005265 energy consumption Methods 0.000 abstract description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides a method for preparing monocrystalline silicon by using silane gas, which comprises the following steps: s1, heating and decomposing silane into silicon, and melting the silicon into liquid silicon; s2, starting the single crystal furnace to heat the single crystal furnace to 1400-1425 ℃; step S3, under the condition of heat preservation, introducing liquid silicon into a quartz crucible of a single crystal furnace, and simultaneously adding a doping agent, wherein the doping agent consists of gallium powder and antimony powder, the mass ratio of the gallium powder to the antimony powder is 64-65:48-49, and the mass ratio of the antimony powder to the liquid silicon material is 12-18:330000, so that the gallium powder and the antimony powder are molten into the liquid silicon; and S4, obtaining the monocrystalline silicon by adopting a continuous Czochralski method or a Czochralski method. The method breaks through the existing mode of preparing monocrystalline silicon by using polycrystalline silicon, adopts silane gas as a raw material, and has the advantages of low energy consumption, short period, high purity, low control difficulty and the like.
Description
Technical Field
The invention belongs to the technical field of production processes of monocrystalline silicon, and particularly relates to a method for preparing monocrystalline silicon by using silane gas.
Background
With the rapid development of electronic information technology and solar photovoltaic power generation technology, silicon (Si) as a base material of these technologies has an important influence on the development of future technologies. Since Si has various unique physical properties as a functional material, the application of Si to a semiconductor material requires the production of a silicon single crystal, the production of a silicon wafer through polishing, cleaning, and other processes, and the further processing and treatment of Si for the production of electronic devices. Currently, silicon single crystals are used for 89% or more of electronic components.
The Continuous Czochralski (CCZ) method invented by the Polish scientist in 1961 is the main method for preparing single crystal silicon. The method takes polysilicon as raw material and is processed by the steps of melting stock, seeding, necking, shouldering, shoulder rotating, equal-diameter growth, ending and the like. Compared with the traditional CCZ method, the continuous Czochralski method can add silicon raw materials (polysilicon) without stopping the furnace, thereby greatly shortening the production time. In addition, the silicon raw material is continuously added, so that the shallow melt depth can be kept, the internal convection intensity of the melt is reduced, and further, the transmission of oxygen is reduced, and the monocrystalline silicon with higher quality is obtained.
The main problem of the early CCZ method is that continuously added silicon materials move towards a solid-liquid interface under the drive of convection, so that the solid-liquid interface oscillates, dislocation, even edge breakage and bud drop are caused. A round quartz baffle plate is added in the quartz crucible to prevent the movement of the silicon material, namely the double crucible method.
The application of the CCZ double-crucible method not only plays a role in reducing the oxygen content of single crystals, but also can greatly improve the production efficiency by adopting a continuous feeding production mode, and the structure of the whole single crystal furnace body is not required to be adjusted in a large range, so that the CCZ double-crucible method is an effective oxygen reduction method which can be used for practical production, and a growth schematic diagram of the CCZ double-crucible method is shown in FIG. 1, wherein 1 is a silicon crystal, 2 is a heat shield, 3 is a quartz crucible, 4 is a graphite crucible, 5 is a side heater, 6 is a bottom heater, 7 is a silicon melt and 8 is a quartz partition plate. However, since the single crystal silicon is prepared from polycrystalline silicon, i.e., the polycrystalline silicon is prepared first, and then the single crystal silicon is prepared through steps such as melting, the production cost of the single crystal silicon is high, the energy consumption for preparing the single crystal silicon is high, and the period is long.
Disclosure of Invention
The invention aims to provide a method for preparing monocrystalline silicon by using silane gas, which breaks through the existing mode of preparing monocrystalline silicon by using polycrystalline silicon, adopts the silane gas as a raw material, and adopts the silane gas to be heated and decomposed into silicon and melted into liquid silicon, and then directly introduces the liquid silicon into a quartz crucible, and adopts a continuous Czochralski method or a Czochralski method to prepare the monocrystalline silicon.
In order to achieve the above purpose, the invention is realized by adopting the following technical scheme:
a method for preparing single crystal silicon using silane gas, the method comprising the steps of:
s1, heating and decomposing silane into silicon, and melting the silicon into liquid silicon;
s2, starting the single crystal furnace to heat the single crystal furnace to 1400-1425 ℃;
step S3, under the condition of heat preservation, introducing liquid silicon into a quartz crucible of a single crystal furnace, and simultaneously adding a doping agent, wherein the doping agent consists of gallium powder and antimony powder, the mass ratio of the gallium powder to the antimony powder is 64-65:48-49, and the mass ratio of the antimony powder to the liquid silicon material is 12-18:330000, so that the gallium powder and the antimony powder are molten into the liquid silicon;
and S4, obtaining the monocrystalline silicon by adopting a continuous Czochralski method or a Czochralski method.
In the preferred embodiment of the present invention, in the step S1, the silane is heated to 1400 to 1425 ℃ to decompose the silane into silicon, and the silicon is melted into liquid silicon.
Preferably, the silane in the step S1 is a silane obtained by rectifying and purifying when preparing the polysilicon by adopting a silane fluidized bed method.
Preferably, the liquid silicon is filled with a protective gas when being filled into the quartz crucible of the single crystal furnace, and the protective gas is inert gas.
As a preferred aspect of the present invention, the specific operation steps of the step S4 are as follows:
(1) Seeding:
a) Selecting a precisely oriented single crystal as a seed crystal, wherein the seed crystal is rectangular or cylindrical, has a diameter of 8mm and a length of 120mm, and the normal direction of the section of the seed crystal is the growth direction of a Czochralski single crystal silicon crystal and is the direction of <111> or <100 >;
b) Chemically polishing the seed crystal;
c) Preserving the temperature of the liquid silicon until the temperature and the flow of the liquid silicon reach stability;
d) Fixing the seed crystal on a seed crystal shaft and rotating together with the seed crystal shaft;
e) Slowly descending the seed crystal, suspending at a position 10mm away from the liquid level, slightly immersing the seed crystal into the liquid silicon when the temperature of the seed crystal is close to that of the liquid silicon, enabling the head to be slightly dissolved at first, and then forming a solid-liquid interface with the liquid silicon;
f) Gradually raising the seed crystal, and reducing the temperature of silicon which is connected with the seed crystal and leaves the solid-liquid interface to form monocrystalline silicon;
(2) Necking: the seed crystal is quickly pulled upwards, so that the diameter of the newly crystallized monocrystalline silicon reaches 3mm, the length is 6-10 times of the diameter of the crystal at the moment, and the rotation speed is 2-10 rpm; the quartz crucible rotates along the opposite direction of the crystal, and the rotation speed of the crystal is 1-3 times faster than that of the quartz crucible;
(3) Shoulder placing: controlling the crystal to a desired target diameter;
(4) And (3) equal-diameter growth: the quartz crucible and the crystal rotate in opposite directions, the rotation speed of the crystal is 2.5-20 rpm, and the rotation speed of the quartz crucible is-1.25 to-10 rpm; controlling the length required by crystal constant diameter production according to the conditions of the melt and the single crystal furnace;
(5) Ending: the crystal diameter gradually decreases and leaves the melt;
(6) And (3) cooling: the temperature is reduced and gradually cooled.
As a preferred aspect of the present invention, in preparing single crystal silicon, the total amount of addition of the gallium powder and the antimony powder is performed in accordance with a standard that the resistivity of the single crystal silicon head is 1.0 to 1.3. Omega. Cm.
Preferably, in the process of preparing the monocrystalline silicon, the heating cavity needs to be vacuumized in the step S4, and protective gas is filled, wherein the protective gas is gas which does not react with silicon or has poor reactivity at the preparation temperature of the monocrystalline silicon, and comprises inert gas.
As a further preferred aspect of the present invention, the rotation speed of the crystal at the time of constant diameter growth is 10rpm, and the rotation speed of the quartz crucible is-5 rpm.
The invention has the advantages and beneficial effects that:
(1) The method for producing the monocrystalline silicon integrates the polycrystalline silicon and the monocrystalline silicon technology, utilizes the formed silane to decompose and melt the silane into the liquid silicon by heating in the process of preparing the polycrystalline silicon, and carries out heat preservation treatment on the liquid silicon to ensure that the liquid silicon is not formed into the polycrystalline silicon any more, but is directly used as a raw material to be put into a monocrystalline silicon growing furnace, and a reaction space is provided by the monocrystalline silicon growing furnace to prepare the monocrystalline silicon.
(2) The method provided by the invention breaks through the existing mode of preparing monocrystalline silicon by using polycrystalline silicon, adopts silane gas as a raw material to prepare silicon liquid, and introduces the silicon liquid into the quartz crucible of the monocrystalline furnace under the condition of heat preservation, and has the advantages of continuous production, less heat loss, high purity, low control difficulty and the like.
(3) According to the method provided by the invention, in the monocrystalline silicon preparation process, the doping agent mixed by gallium and antimony according to a certain proportion is added into the silicon liquid, and the addition of the mixed doping agent can enable the longitudinal resistivity of the prepared monocrystalline silicon rod to be distributed more uniformly, so that the length of the monocrystalline silicon rod in production can be prolonged, and the utilization rate of the crystal rod is improved.
(4) According to the method provided by the invention, in the monocrystalline silicon preparation process, the crystal and the quartz crucible rotate together, and the quality of monocrystalline silicon can be obviously improved by reasonably controlling the rotation speeds of the crystal and the quartz crucible.
(5) According to the method provided by the invention, the protective gas is required to be filled when the liquid silicon is introduced into the growth furnace, and the existence of the protective gas can prevent impurity pollution.
Drawings
FIG. 1 is a schematic diagram of CCZ double crucible growth.
Detailed Description
The following description of the technical solutions in the embodiments of the present application will be made clearly and completely with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
Example 1
The present embodiment provides a method for producing single crystal silicon using silane gas, comprising the steps of:
step S1, introducing silane into a treatment device, heating to 1420 ℃ to decompose the silane into silicon, and melting the silicon into silicon liquid (liquid silicon); the silane is obtained by rectifying and purifying when preparing polysilicon by adopting a silane fluidized bed method;
s2, starting the single crystal furnace to heat the single crystal furnace to more than 1420 ℃;
step S3, under the condition of heat preservation, 182Kg of silicon liquid is introduced into a quartz crucible of a 90 type single crystal furnace, and the diameter of the quartz crucible is about 65cm; when the silicon liquid is introduced into a growth furnace, argon is adopted as a protective gas, meanwhile, the resistivity of the head of monocrystalline silicon is about 1.0 omega cm as a standard, and a doping agent consisting of 12.9g of gallium powder with the particle size of 2-5mm and 9.7g of antimony powder with the particle size of 2-8mm is added, so that gallium and antimony are simultaneously melted into the silicon liquid;
and S4, sequentially carrying out the steps of seed crystal introduction, necking, shoulder placement, constant diameter, ending and putting forward according to a Czochralski crystal growing process.
(1) Seeding:
a) Selecting a precisely oriented single crystal as a seed crystal, wherein the seed crystal is cylindrical, the diameter is 8mm, the length is 120mm, the normal direction of the cross section of the seed crystal is the growth direction of a Czochralski single crystal silicon crystal, and the direction is <100 >;
b) Chemically polishing the seed crystal;
c) Preserving the temperature of the liquid silicon until the temperature and the flow of the liquid silicon reach stability;
d) Fixing a single crystal seed crystal of a cylindrical <100> orientation on a seed crystal shaft and rotating with the seed crystal shaft;
e) Slowly descending the seed crystal, suspending for a moment at a position 10mm away from the liquid level, slightly immersing the seed crystal into the liquid silicon when the temperature of the seed crystal is close to that of the liquid silicon, enabling the head to be slightly dissolved at first, and then forming a solid-liquid interface with the liquid silicon;
f) Gradually raising the seed crystal, and reducing the temperature of silicon which is connected with the seed crystal and leaves the solid-liquid interface to form monocrystalline silicon;
(2) Necking: the seed crystal is quickly pulled upwards, so that the diameter of the newly crystallized monocrystalline silicon reaches 3mm, the length is about 6-10 times of the diameter of the crystal at the moment, and the rotation speed is 2-10 rpm; the quartz crucible rotates in the opposite direction of the crystal, and the rotation speed of the crystal is 2 times faster than that of the quartz crucible;
(3) Shoulder placing: controlling the crystal to a desired target diameter;
(4) And (3) equal-diameter growth: the quartz crucible and the crystal rotate in opposite directions, the rotation speed of the crystal is 10rpm, and the rotation speed of the quartz crucible is-5 rpm; controlling the length required by crystal constant diameter production according to the conditions of the melt and the single crystal furnace;
(5) Ending: the crystal diameter gradually decreases and leaves the melt;
(6) And (3) cooling: the temperature is reduced and gradually cooled.
When the process is carried out, the crystal bar is pulled and rotated, and the resistivity of the whole obtained single crystal silicon bar is changed within the range of 0.3-1.2 omega cm, wherein the longitudinal length of the single crystal silicon bar with the resistivity within the range of 0.4-1.1 omega cm accounts for 90 percent of the longitudinal length of the whole single crystal silicon bar, and the purity is 99.9999 percent.
Example 2
This example provides a method for producing single crystal silicon using silane gas, which differs from example 1 in that: a dopant consisting of 12.8g of gallium powder having a particle size of 2 to 5mm and 9.8g of antimony powder having a particle size of 2 to 8mm was added with the head resistivity of single crystal silicon being about 1.1. Omega. Cm as a standard.
When the process is carried out, the crystal bar is pulled and rotated, and the resistivity of the whole obtained single crystal silicon bar is changed within the range of 0.3-1.2 omega cm, wherein the longitudinal length of the single crystal silicon bar with the resistivity within the range of 0.4-1.1 omega cm accounts for 92% of the longitudinal length of the whole single crystal silicon bar, and the purity is 99.9999%.
Example 3
This example provides a method for producing single crystal silicon using silane gas, which differs from example 1 in that: a dopant consisting of 13g of gallium powder having a particle size of 2 to 5mm and 9.6g of antimony having a particle size of 2 to 8mm was added with a single crystal silicon head resistivity of about 1.3. OMEGA.cm as a standard.
The resistivity of the whole single crystal silicon rod obtained by rotating the crystal rod while pulling the crystal rod when the process is performed varies in the range of 0.3 to 1.2 Ω·cm, wherein the longitudinal length of the single crystal silicon rod having the resistivity in the range of 0.4 to 1.1 Ω·cm accounts for 90% of the longitudinal length of the whole single crystal silicon rod, and the purity is 99.9999%.
Example 4
This example provides a method for producing single crystal silicon using silane gas, which differs from example 1 in that:
343Kg of silicon solution is introduced into a quartz crucible of a 110-type single crystal furnace with an inner diameter of 110cm, gallium is only added into the silicon solution in the previous three times of single crystal drawing, and 24.1g of gallium powder with a particle diameter of 2-5mm is added according to the standard that the resistivity of the head of the single crystal silicon can reach 1.1 Ω cm.
In this example, the ratio of single crystals pulled out each time in the previous three times was 60%, and the head-to-tail resistivity ranges from 0.4 to 1.1. Omega. Cm.
Gallium and antimony are simultaneously added into the silicon liquid when the fourth rod is pulled, the adding amount of the gallium and the antimony can be carried out according to the head resistivity of the monocrystalline silicon rod reaching 1.3 omega cm, in the embodiment, doping agent consisting of 17.6g of gallium powder with the grain size of 2-5mm and 13g of antimony with the grain size of 2-8mm is added, when the fourth rod is pulled out completely, the resistivity of the tail part of the monocrystalline silicon of the fourth rod is measured to be about 0.3 omega cm, the whole fourth rod is calculated, the concentration degree of the resistivity of the monocrystalline silicon is positioned between 0.4 and 1.1 omega cm reaching more than 90 percent, and the utilization rate of the monocrystalline silicon of the last rod is improved by about 30 percent and the purity of the monocrystalline silicon of the last rod is 99.9999 percent compared with the traditional gallium-doped monocrystalline silicon.
Example 5
Referring to the method of example 1, the grown silicon single crystal was examined under three conditions, the selected samples being p-type <100> orientation, unannealed czochralski silicon wafers with resistivity of 1.7Ω·cm, by changing only the co-rotation speed of the crystal and the quartz crucible, the three conditions being the respective 2.5, 10, 20rpm rotations of the crystal, the quartz crucible corresponding to the respective-1.25, -5, -10rpm rotations of the quartz crucible to produce silicon single crystal.
And detecting results of the grown monocrystalline silicon under three working conditions of the crystal and the quartz crucible rotating together.
By comparing the detection data, the crystal rotates at 10rpm, the quartz crucible rotates at-5 rpm, and the quality of the grown monocrystalline silicon is best and far better than that of the monocrystalline silicon products on the market.
It is necessary to explain that: in the process of preparing monocrystalline silicon by the Czochralski method, the heating cavity is required to be vacuumized, and protective gas such as argon or nitrogen is filled, and in some embodiments, the inert gas can be argon. Of course, other inert gases that do not react with silicon or are poorly reactive may be used. Inert gases herein refer to gases that do not react or are poorly reactive with silicon at the production temperature of single crystal silicon, including but not limited to argon and the like.
The foregoing is a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present invention, and it is intended to cover the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (8)
1. A method for producing single crystal silicon using silane gas, characterized by comprising the steps of:
s1, heating and decomposing silane into silicon, and melting the silicon into liquid silicon;
s2, starting the single crystal furnace to heat the single crystal furnace to 1400-1425 ℃;
step S3, under the condition of heat preservation, introducing liquid silicon into a quartz crucible of a single crystal furnace, and simultaneously adding a doping agent, wherein the doping agent consists of gallium powder and antimony powder, the mass ratio of the gallium powder to the antimony powder is 64-65:48-49, and the mass ratio of the antimony powder to the liquid silicon material is 12-18:330000, so that the gallium powder and the antimony powder are molten into the liquid silicon;
and S4, obtaining the monocrystalline silicon by adopting a continuous Czochralski method or a Czochralski method.
2. The method for producing silicon single crystal using silane gas according to claim 1, wherein in step S1, silane is heated to 1400 to 1425 ℃ to decompose silicon and melt it into liquid silicon.
3. The method for preparing single crystal silicon by using silane gas according to claim 1, wherein the silane in the step S1 is a silane obtained by rectifying and purifying when preparing polycrystalline silicon by using a silane fluidized bed method.
4. The method for producing silicon single crystal by using silane gas according to claim 1, wherein the liquid silicon is introduced into a quartz crucible of a single crystal furnace by filling a protective gas, and the protective gas is an inert gas.
5. The method for producing silicon single crystal using silane gas according to claim 1, wherein the specific operation of step S4 is as follows:
(1) Seeding:
a) Selecting a precisely oriented single crystal as a seed crystal, wherein the seed crystal is rectangular or cylindrical, has a diameter of 8mm and a length of 120mm, and the normal direction of the section of the seed crystal is the growth direction of a Czochralski single crystal silicon crystal and is the direction of <111> or <100 >;
b) Chemically polishing the seed crystal;
c) Preserving the temperature of the liquid silicon until the temperature and the flow of the liquid silicon reach stability;
d) Fixing the seed crystal on a seed crystal shaft and rotating together with the seed crystal shaft;
e) Slowly descending the seed crystal, suspending at a position 10mm away from the liquid level, slightly immersing the seed crystal into the liquid silicon when the temperature of the seed crystal is close to that of the liquid silicon, enabling the head to be slightly dissolved at first, and then forming a solid-liquid interface with the liquid silicon;
f) Gradually raising the seed crystal, and reducing the temperature of silicon which is connected with the seed crystal and leaves the solid-liquid interface to form monocrystalline silicon;
(2) Necking: the seed crystal is quickly pulled upwards, so that the diameter of the newly crystallized monocrystalline silicon reaches 3mm, the length is 6-10 times of the diameter of the crystal at the moment, and the rotation speed is 2-10 rpm; the quartz crucible rotates along the opposite direction of the crystal, and the rotation speed of the crystal is 1-3 times faster than that of the quartz crucible;
(3) Shoulder placing: controlling the crystal to a desired target diameter;
(4) And (3) equal-diameter growth: the quartz crucible and the crystal rotate in opposite directions, the rotation speed of the crystal is 2.5-20 rpm, and the rotation speed of the quartz crucible is-1.25 to-10 rpm; controlling the length required by crystal constant diameter production according to the conditions of the melt and the single crystal furnace;
(5) Ending: the crystal diameter gradually decreases and leaves the melt;
(6) And (3) cooling: the temperature is reduced and gradually cooled.
6. The method for producing single crystal silicon using silane gas according to claim 1, wherein the total amount of addition of gallium powder and antimony powder is performed in the standard of 1.0 to 1.3 Ω -cm of resistivity of the single crystal silicon head when producing single crystal silicon.
7. The method according to claim 1, wherein in the step S4, vacuum is required to be applied to the heating chamber and a protective gas is introduced during the process of preparing the silicon single crystal, wherein the protective gas is a gas which does not react with silicon or has poor reactivity at the preparation temperature of the silicon single crystal, and the gas comprises an inert gas.
8. The method for producing silicon single crystal using silane gas according to claim 5, wherein the rotation speed of the crystal is 10rpm and the rotation speed of the quartz crucible is-5 rpm at the time of the constant diameter growth.
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