CN117845167A - Method for growing layered tungsten disulfide film on photonic chip and film - Google Patents
Method for growing layered tungsten disulfide film on photonic chip and film Download PDFInfo
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- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
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Abstract
The invention relates to the technical field of semiconductor materials, in particular to a method for growing a layered tungsten disulfide film on a photonic chip and a film, comprising the following steps: taking tungsten disulfide solid powder as a growth raw material, placing the growth raw material in a heating zone in a tube furnace, and placing a photonic chip to be grown with tungsten disulfide in a heat preservation zone of the tube furnace; introducing protective gas into the tubular furnace, wherein the flow speed of the protective gas is 40-80sccm, and the flow direction of the protective gas is from a heating zone to a heat preservation zone; heating the area where the tungsten disulfide solid powder is positioned to the growth temperature of tungsten disulfide, and preserving heat to realize the growth of the layered tungsten disulfide film on the photonic chip; the invention avoids the scattering source growing with block or branch crystal, and improves the size of the film.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a method for growing a layered tungsten disulfide film on a photonic chip and a film.
Background
The layered transition metal chalcogenide (TMDCs) semiconductor film has excellent optical and electrical properties and has wide application prospect in the field of integrated optoelectronic chips. When the film thickness of TMDCs is thinned from multiple atoms to a single atom, the material changes from an indirect bandgap semiconductor to a direct bandgap semiconductor, and a series of novel physical phenomena are corresponding to the indirect bandgap semiconductor; in addition, when TMDCs are changed into single layers, the TMDCs have strong second-order nonlinear optical characteristics and have wide application prospects in the fields of quantum light sources and the like.
Graphene was originally obtained by mechanical exfoliation of bulk graphite, which also opens the door for research into layered TMDCs. Layered tungsten disulfide (WS) 2 ) As a representative of TMDCs, one can also use the bulk WS 2 Mechanical stripping is obtained and then transferred to a photonic chip for subsequent investigation. Layered WS obtained by mechanical exfoliation 2 The integrated operation of the two-dimensional material and the photonic chip is realized by transferring the material to the photonic chip, the dependence on equipment is low, and the integrated operation is widely applied to laboratory researches; however, the photonic chip is a non-planar substrate, and the surface of the photonic chip has a waveguide step with a height of hundreds of nanometers, so that when the two-dimensional material with the atomic layer thickness is transferred onto the photonic chip, the two-dimensional material can only be transferred onto the upper surface of the waveguide step. In addition, the height of the waveguide step is higher than the thickness of the two-dimensional material, so that the transferred two-dimensional material is extremely easy to cause the problems of wrinkling, fracture and the like. In addition, the two-dimensional material transfer method is poor in repeatability and cannot be popularized on a large scale.
To solve the disadvantages of the transfer method, attempts can be made to grow layered WS directly on photonic chips with micro-nano structures 2 。WS 2 The growth mode can be divided into chemical vapor deposition and physical vapor deposition. The chemical vapor deposition method generally needs to pretreat the surface of the photonic chip, two temperature partitions are arranged in the tube furnace, and the surface WS of the photonic chip is realized through chemical reaction 2 Growing a semiconductor film; physical vapor deposition methodThe method is simpler, and the photonic chip is not required to be preprocessed, so that WS is protected 2 The powder is directly heated, no chemical reaction occurs, and the layered WS is directly obtained on the surface of the photonic chip 2 A semiconductor thin film.
The conventional physical vapor deposition method is reverse physical vapor deposition, namely reverse airflow in the temperature rising stage and forward airflow in the growth stage. For example, the patent of China patent application No. 201911032943.1 discloses a preparation method and application of tungsten disulfide two-dimensional material with monoatomic layer and reverse physical vapor deposition. The method utilizes a reverse gas flow method in the silicon oxide/Silicon (SiO) 2 Si) on a flat substrate, a single layer WS having a feature size of 50-200 μm is grown 2 . This method is not suitable for growing layered WS directly on the surface of photonic chip 2 The effect is not ideal, and a scattering source in the form of a block or dendrite grows.
Disclosure of Invention
The invention aims to provide a method for growing a layered tungsten disulfide film on a photon chip and a film, which can avoid the growth of a blocky or branched scattering source and improve the size of the film.
The embodiment of the invention provides a method for growing a layered tungsten disulfide film on a photonic chip, which comprises the following steps: taking tungsten disulfide solid powder as a growth raw material, placing the growth raw material in a heating zone in a tube furnace, and placing a photonic chip to be grown with tungsten disulfide in a heat preservation zone of the tube furnace;
introducing protective gas into the tubular furnace, wherein the flow speed of the protective gas is 40-80sccm, and the flow direction of the protective gas is from a heating zone to a heat preservation zone; heating the area where the tungsten disulfide solid powder is located to the growth temperature of tungsten disulfide, and preserving heat to realize the growth of the layered tungsten disulfide film on the photonic chip.
In the heating stage and the heat preservation stage, the airflow direction of the protective gas is the heating region to the heat preservation region. The growth method of the invention is that tungsten disulfide solid powder is heated and sublimated, then deposited on a photon chip along with the direction of the protective gas flow, and grows into a layered semiconductor film in the heat preservation process, and the growth process does not involve chemical process. The mass of the growth raw material, namely the tungsten disulfide solid powder, is 0.3-0.6 g.
As one example, the surface of the photonic chip to be grown with tungsten disulfide has a raised silicon nitride straight waveguide and micro-ring micro-nano structure, the step height is 600-1000 nm, and the size of the photonic chip is 1.5 cm by 3 cm.
As one example, the photonic chip to be grown with tungsten disulfide is placed in the center of the heat-preserving region of the tube furnace, and the distance between the center of the raw material for growth and the center of the photonic chip is 7-12cm.
As one example, the shielding gas is argon.
As one example, the protecting gas is introduced to clean the gas path before the growth of the raw material, the flow rate of the protecting gas is 300-500sccm, and the cleaning time is 3-10 minutes.
As one example, in the process of heating the area where the tungsten disulfide solid powder is located to the growth temperature of tungsten disulfide, the flow rate of the shielding gas is 40-80sccm, and the gas flow direction of the shielding gas is from the heating area to the heat preservation area.
As one example, the growth temperature is 1050-1180 ℃, and the incubation time is 10-15min.
As one embodiment, during the heat preservation, the flow rate of the shielding gas is 50-80sccm, and the air flow direction of the shielding gas is from the heating area to the heat preservation area.
As one example, after the growth process is finished, the tube furnace is naturally cooled to complete the growth of the layered tungsten disulfide film on the photonic chip;
wherein, the tube furnace is heated, kept warm and the protection gas is introduced in the natural cooling process.
The embodiment of the invention provides a film, which is prepared by adopting the method for growing a layered tungsten disulfide film on a photon chip.
The invention has the advantages that,
1. preparation of monoatomic layer WS by reverse airflow physical vapor deposition method reported in publication 2 Compared with the prior art, the invention adopts positive airflow in the whole material growth process, and the direction of the protective gas is WS 2 Solid powder to WS to be grown 2 Photon chip of semiconductor film. The main reason for using reverse airflow solution is to prevent WS 2 Starting growth without reaching the growth temperature; experiments have shown that they grow a bulk or dendritic scattering source on the surface of the waveguide. The conventional idea of reducing or avoiding the growth of bulk or dendrite scattering sources on the waveguide surface is to reduce the flow of shielding gas during material growth, avoiding WS 2 Stacking, avoiding the formation of lump or dendrite-like scattering sources. The invention also uses a positive gas flow during the heating stage, and maintains the flow rate unchanged, so that the formation of a bulk or dendrite scattering source can be avoided, possibly because the invention maintains WS until the growth temperature is reached 2 The forward airflow direction of the powder to the photonic chip, providing more WS on the waveguide 2 The nucleation point is formed, a scattering source of waveguide surface blocks or dendrites which appear in the growth process by using a reverse airflow method is avoided, and the versatility of the photon chip is reserved. It is generally believed that WS is provided prematurely 2 The nucleation point can cause accumulation, but experiments in the application show that when the temperature is not increased to the growth stage in the heating stage, the photon chip is enabled to accumulate partial nucleation point, the flow rate of the protective gas is controlled to be 40-80sccm, the growth problem of a blocky or dendrite scattering source is solved, and the particle size of the particle size film can be larger, so that the particle size is obtained outside the meaning of the inventor.
2. Method for preparing layered WS by chemical vapor deposition method as reported in publication 2 Compared with the semiconductor film, the invention only needs a solid WS 2 The solid powder is used as a growth raw material, a plurality of heating areas are not needed, and layered WS can be directly grown on the photonic chip through one-step growth of a physical process 2 A semiconductor thin film.
Drawings
FIG. 1 shows a layered WS according to an embodiment of the invention 2 A tubular furnace structure and an airflow schematic diagram for semiconductor film growth.
FIG. 2 shows WS obtained in example 1 of the present invention 2 Scanning electron microscope photographs of the films.
FIG. 3 shows WS obtained in example 2 of the present invention 2 Scanning electron microscope photographs of the films.
FIG. 4 shows WS obtained in example 3 of the invention 2 Scanning electron microscope photographs of the films.
FIG. 5 is WS obtained in comparative example 1 2 Scanning electron microscope photographs of the films.
FIG. 6 is a WS obtained in comparative example 2 2 Scanning electron microscope photographs of the films.
FIG. 7 is a WS obtained in comparative example 3 2 Scanning electron microscope photographs of the films.
In the figure, a heat preservation area 1, a heating area 2 and a 3-photon chip.
Detailed description of the preferred embodiments
Example 1
A method for growing layered tungsten disulfide film on photon chip by tubular furnace structure shown in figure 1 and WS 2 Solid powder was used as a growth raw material. Weighing WS 2 The solid powder 0.3g was placed in a quartz boat and then charged with 0.3g WS 2 The quartz boat of solid powder is placed in the heating zone 2 of the tube furnace. Silicon-based photonic chip 3 (the size is 1.5 cm 3 cm, the height of waveguide steps is about 600 nanometers) with a silicon nitride micro-ring structure and with a clean surface is carried by a quartz boat, the silicon-based photonic chip is placed in the central position of a heat preservation area 1 of a tubular furnace, the central position of a growing raw material is about 7 cm away from the central position of a substrate, and then the tubular furnace is sealed; argon is introduced as a protective gas, and the gas flow direction is a forward gas flow (from WS 2 Solid powder to photonic chip), the gas flow is 300sccm, and the flow is maintained for 5 minutes, so that the inert gas atmosphere for the growth of the subsequent materials is maintained by the cleaning pipeline; then the gas flow of the shielding gas argon is regulated to 80sccm, a program is set to heat the tubular furnace, the tubular furnace is heated from room temperature to 1100 ℃ for 45 minutes, then the temperature is kept for 10 minutes, then the heating is stopped, the tubular furnace is naturally cooled to room temperature, and the layered WS growing on the photonic chip is obtained 2 A semiconductor thin film. The direction of the whole heating and natural cooling process shielding gasThe gas flow is kept unchanged, and the preparation process is normal pressure.
FIG. 2 shows WS obtained in example 1 of the present invention 2 Scanning electron microscope pictures of the semiconductor thin films. From the figure, WS can be seen 2 The continuity of the growth of the semiconductor film is not due to SiO 2 The Si substrate is affected by the raised structure of the silicon nitride micro-ring, the shape of the film is approximately triangular, and the feature size is about 280 microns. And no scattering source in the form of blocks or dendrites is present on the silicon nitride micro-ring.
Example 2
A method for growing layered tungsten disulfide film on photon chip includes such steps as weighing WS 2 The solid powder 0.4g was placed in a quartz boat and then charged with 0.4g WS 2 The quartz boat of solid powder is placed in the heating zone 2 of the tube furnace. A silicon-based photonic chip 3 (the size is 1.5 cm 3 cm, the height of a waveguide step is about 600 nanometers) with a silicon nitride micro-ring structure and a clean surface is carried by a quartz boat, the silicon-based photonic chip is placed in the central position of a heat preservation area 1 of a tubular furnace, the central position of a growing raw material is about 10 cm away from the central position of a substrate, and then the tubular furnace is sealed; argon is introduced as a protective gas, and the gas flow direction is a forward gas flow (from WS 2 Solid powder to photonic chip), the gas flow is 300sccm, and the flow is maintained for 5 minutes, so that the inert gas atmosphere for the growth of the subsequent materials is maintained by the cleaning pipeline; then the gas flow of the shielding gas argon is regulated to 50sccm, a program is set to heat the tubular furnace, the tubular furnace is heated from room temperature to 1170 ℃ after 46 minutes, then the temperature is kept for 12 minutes, then the heating is stopped, the tubular furnace is naturally cooled to room temperature, and the layered WS on the photonic chip with the silicon nitride micro-ring bulge micro-nano structure is realized 2 And (5) growing a semiconductor film. The direction and the gas flow of the whole heating and natural cooling process protective gas are kept unchanged, and the preparation process is normal pressure.
FIG. 3 shows WS obtained in example 2 of the present invention 2 Scanning electron microscope pictures of the semiconductor thin films. From the figure, WS can be seen 2 The continuity of the growth of the semiconductor film is not due to SiO 2 The Si substrate is affected by the raised structure of the silicon nitride micro-ring, and the shape of the film is similar to that of the filmIs triangular and has a feature size of about 300 microns. And no scattering source in the form of blocks or dendrites is present on the silicon nitride micro-ring.
Example 3
A method for growing layered tungsten disulfide film on photon chip includes such steps as weighing WS 2 The solid powder 0.4g was placed in a quartz boat and then charged with 0.4g WS 2 The quartz boat of solid powder is placed in the heating zone 2 of the tube furnace. A silicon-based photonic chip 3 (the size is 1.5 cm 3 cm, the height of a waveguide step is about 600 nanometers) with a silicon nitride micro-ring structure and a clean surface is carried by a quartz boat, the silicon-based photonic chip is placed in the central position of a heat preservation area 1 of a tubular furnace, the central position of a growing raw material is about 10 cm away from the central position of a substrate, and then the tubular furnace is sealed; argon is introduced as a protective gas, and the gas flow direction is a forward gas flow (from WS 2 Solid powder to substrate), the gas flow is 300sccm, this flow is maintained for 5 minutes, the inert gas atmosphere used for cleaning the pipeline and keeping the subsequent material growth; then the gas flow of the shielding gas argon is regulated to 50sccm, a program is set to heat the tubular furnace, the tubular furnace is heated from room temperature to 1170 ℃ after 46 minutes, then the temperature is kept for 15 minutes, then the heating is stopped, the tubular furnace is naturally cooled to room temperature, and the SiO with the silicon nitride micro-ring bulge micro-nano structure is realized 2 Layered WS on Si photonics chip 2 And (5) growing a semiconductor film. The direction and the gas flow of the whole heating and natural cooling process protective gas are kept unchanged, and the preparation process is normal pressure.
FIG. 4 shows WS obtained in example 3 of the invention 2 Scanning electron microscope pictures of the semiconductor thin films. From the figure, WS can be seen 2 The continuity of the growth of the semiconductor film is not due to SiO 2 The Si substrate is provided with a silicon nitride micro-ring bulge structure to be influenced; and due to WS compared to examples 1-2 2 Extension of incubation time at growth temperature, WS 2 The continuous size of the semiconductor film further increased, about 340 microns. Also, no bulk or dendrite scattering sources are present on the silicon nitride microring.
Comparative example 1
A method for growing a layered tungsten disulfide film on a photonic chip comprises the following specific growth parameters and growth results.
Preparation: cutting the prepared silicon nitride photonic chip into small pieces with the length of 1.5 cm and 3 cm, and then placing the small pieces into pure water for ultrasonic cleaning; WS to 0.05 g 2 The powder is placed in a quartz boat and in a heating zone 2, and a prepared silicon nitride photonic chip 3 is placed in the center of a heat preservation zone 1 of the whole tube furnace. Initially, the direction of the gas flow is from the photonic chip to WS 2 Powder, then starting to heat; when the temperature is raised to 1100 ℃, the direction of the inert gas is changed to lead the gas flow direction to be from WS 2 The powder is fed into a photonic chip, the flow rate of the air flow is regulated to 80sccm, and the temperature is kept for 7 minutes in the temperature range, so that WS is obtained 2 Growing on a photonic chip with a micro-nano structure; then, the temperature is reduced to 1000 ℃, and the flow speed of the air flow is regulated to be 60sccm; then cooling to 900 ℃, and adjusting the gas flow rate to 20sccm; and cooling to room temperature and taking out the photonic chip. Observation at SiO 2 Growth of high quality monolayer WS on Si substrate 2 Growth of WS on photonic chip with micro-nano structure on surface by reverse physical vapor deposition method 2 Is a mass of (3).
FIG. 5 shows the growth of layered WS on a photonic chip with a silicon nitride micro-ring resonator micro-nano structure using the method described above (see example 1 of China patent application No. 201911032943.1) 2 Scanning electron microscope results of (2). It can be seen that WS 2 The characteristic dimension is 100 micrometers, which reaches the standard of SiO proposed in Chinese patent with application number 201911032943.1 2 Layered WS grown on Si planarizing substrate 2 Comparable dimensions; but at the same time we can find that many WS are grown on the micro-ring due to the raised height of the silicon nitride micro-ring approaching one micron 2 Bulk scattering sources. The main reason for using reverse airflow is to avoid WS before reaching growth temperature 2 Growth on the substrate begins. As can be seen from FIG. 5, comparative example 1 has a large amount of WS when grown on a silicon nitride micro-ring resonator 2 Bulk scattering sources, which would result in light not being able to propagate continuously in the silicon nitride waveguide, lose the function of the photonic chip. From the growth results shown in FIG. 5, it can be seen that the comparative example1 in SiO by reverse physical vapor deposition 2 Growth WS on Si planarizing substrate 2 Is not suitable for directly growing layered WS on photon chip with micro-nano structure 2 A semiconductor thin film.
Comparative example 2
A method for growing a layered tungsten disulfide film on a photonic chip comprises the following specific growth parameters and growth results.
Preparation: cutting the prepared silicon nitride photonic chip into small pieces with the length of 1.5 cm and 3 cm, and then placing the small pieces into pure water for ultrasonic cleaning; WS to 0.06 g 2 The powder is placed in a quartz boat and in the middle of a heating zone 2, and a prepared silicon nitride photonic chip 3 is placed in the center of the whole heat preservation zone 1 of the tube furnace. Initially, the direction of the gas flow is from the photonic chip to WS 2 Powder, then starting to heat; when the temperature is raised to 1200 ℃, the direction of inert gas is changed to lead the gas flow direction to be from WS 2 The powder is fed into a photonic chip, the flow rate of the air flow is regulated to 30sccm, and the temperature is kept for 10 minutes in the temperature range, so that WS is obtained 2 Growing on a photonic chip with a micro-nano structure; then, the temperature is reduced to 950 ℃, and the flow speed of the airflow is regulated to be 50sccm; then cooling to 800 ℃, and adjusting the gas flow rate to 20sccm; cooling to room temperature, taking out the photon chip, observing at SiO 2 Growth of high quality monolayer WS on Si substrate 2 Growth of WS on photonic chip with micro-nano structure on surface by reverse physical vapor deposition method 2 Is a mass of (3).
FIG. 6 shows the growth of layered WS on a photonic chip with a silicon nitride micro-ring resonator micro-nano structure using the method described in comparative example 2 2 Scanning electron microscope results of (2). It can be seen that WS 2 Features of about 200 microns, WS 2 The increase in feature size is due to the use of higher growth temperature, lower gas flow rate during growth and longer soak time than the method described in comparative example 1, also achieved the method described in China patent application No. 201911032943.1 2 Layered WS grown on Si planarizing substrate 2 Comparable dimensions; but at the same time we can find that the raised height of the silicon nitride micro-ring is close to a micro-ringRice, many WS are grown on the micro-ring 2 Dendrite-like scattering sources. The main reason for using reverse airflow is to avoid WS before reaching growth temperature 2 Growth on the substrate begins. As can be seen from FIG. 6, comparative example 2 produced a significant amount of WS when grown on a silicon nitride micro-ring resonator 2 Dendrite scattering sources, which would result in light not being able to propagate continuously in the silicon nitride waveguide, lose the function of the photonic chip. As can be seen from the growth results shown in FIG. 6, the reverse physical vapor deposition method was used to deposit SiO 2 Growth WS on Si planarizing substrate 2 Is not suitable for directly growing layered WS on photon chip with micro-nano structure 2 A semiconductor thin film.
Comparative examples 1-2 layered WS of super hundred nanometer feature size can be grown directly on the surface of photonic chip with micro-nano structure 2 Crystals, which can reach the content of SiO as proposed in the patent 2 WS grown on Si substrate 2 Crystal size effect; but at the same time it was noted that the use of reverse gas flow method did not prevent the growth of layered WS on silicon nitride micro-rings 2 A scattering source in the form of a block (fig. 5) or dendrite (fig. 6) grows around the perimeter of the silicon nitride micro-ring, and these scattering sources will prevent light from propagating in the silicon nitride micro-ring, losing the function of the integrated photonic chip.
The invention ensures that the layered WS with larger area can be grown on the surface of the silicon nitride micro-ring 2 The semiconductor film can avoid the growth of a blocky or branched scattering source, increase the versatility of the silicon nitride photonic chip and prevent the silicon nitride photonic chip from losing the function.
Comparative example 3
A method for growing a layered tungsten disulfide film on a photonic chip comprises the following specific growth parameters and growth results.
Preparation: cutting the prepared silicon nitride photonic chip into small pieces with the length of 1.5 cm and 3 cm, and then placing the small pieces into pure water for ultrasonic cleaning; WS to 0.3g 2 The powder was placed in a quartz boat and centered in a heating zone 2, and a prepared silicon nitride photonic chip 3 (1.5 cm by 3 cm in size, waveguide step height of about 600 nmMeter) is carried by a quartz boat, is arranged at the central position of a heat preservation area 1 of the tube furnace, and the central position of the growth raw material is about 8 cm away from the central position of the substrate, and then the tube furnace is sealed; argon is introduced as a protective gas, and the gas flow direction is a forward gas flow (from WS 2 Solid powder to photonic chip), the gas flow is 300sccm, and the flow is maintained for 5 minutes, so that the inert gas atmosphere for the growth of the subsequent materials is maintained by the cleaning pipeline; then the flow of the shielding gas argon is adjusted to 90sccm, a program is set to heat the tube furnace, the tube furnace is heated from room temperature to 1100 ℃ for 45 minutes, then the temperature is kept for 10 minutes, then the heating is stopped, the tube furnace is naturally cooled to room temperature, and WS growing on the photonic chip is observed 2 . The direction and the gas flow of the whole heating and natural cooling process protective gas are kept unchanged, and the preparation process is normal pressure.
The method for growing the layered tungsten disulfide film on the photonic chip needs to ensure that the flow rate of the protective gas is 40-80sccm in the material growth process, and the flow rate of the gas in the material growth process in the comparative example is 90sccm, and as can be seen from FIG. 7, the layered WS cannot be realized due to overlarge flow rate of the gas 2 Growth of thin films resulting in growth of WS on silicon nitride microrings 2 The dendrite-like scattering source loses the function of the photonic chip.
Those of ordinary skill in the art will appreciate that: the discussion of any of the embodiments above is merely exemplary and is not intended to imply that the scope of the present application is limited to such examples; combinations of features of the above embodiments or in different embodiments are also possible within the spirit of the application, steps may be implemented in any order, and there are many other variations of the different aspects of one or more embodiments described above which are not provided in detail for the sake of brevity.
One or more embodiments herein are intended to embrace all such alternatives, modifications and variations that fall within the broad scope of the present application. Any omissions, modifications, equivalents, improvements, and the like, which are within the spirit and principles of the one or more embodiments in the present application, are therefore intended to be included within the scope of the present application.
Claims (10)
1. A method for growing a layered tungsten disulfide film on a photonic chip, comprising the steps of: taking tungsten disulfide solid powder as a growth raw material, placing the growth raw material in a heating zone in a tube furnace, and placing a photonic chip to be grown with tungsten disulfide in a heat preservation zone of the tube furnace;
introducing protective gas into the tubular furnace, wherein the flow speed of the protective gas is 40-80sccm, and the flow direction of the protective gas is from a heating zone to a heat preservation zone; heating the area where the tungsten disulfide solid powder is located to the growth temperature of tungsten disulfide, and preserving heat to realize the growth of the layered tungsten disulfide film on the photonic chip.
2. The method for growing a layered tungsten disulfide film on a photonic chip according to claim 1, wherein the surface of the photonic chip requiring tungsten disulfide growth is provided with a raised silicon nitride straight waveguide and a micro-ring micro-nano structure, and the step height is 600-1000 nanometers.
3. The method for growing a layered tungsten disulfide film on a photonic chip according to claim 1, wherein the photonic chip to be grown with tungsten disulfide is placed at the center of the heat-preserving region of the tube furnace, and the distance from the center of the raw material for growth to the center of the photonic chip is 7-12cm.
4. The method of growing a layered tungsten disulfide film on a photonic chip of claim 1 wherein said shielding gas is argon.
5. The method for growing a layered tungsten disulfide film on a photonic chip according to claim 1, wherein a protective gas is introduced to clean the gas path before the growth of the raw material for growth, the flow rate of the protective gas is 300-500sccm, and the cleaning time is 3-10 minutes.
6. The method for growing a layered tungsten disulfide film on a photonic chip according to claim 1, wherein in the process of heating the region where the tungsten disulfide solid powder is located to the growth temperature of tungsten disulfide, the flow rate of the shielding gas is 50-80sccm, and the flow direction of the shielding gas is the heating region to the heat preservation region.
7. The method of claim 1, wherein the growth temperature is 1050-1180 ℃ and the incubation time is 10-15min.
8. The method for growing a layered tungsten disulfide film on a photonic chip according to claim 1, wherein the flow rate of the shielding gas is 40-80sccm and the flow direction of the shielding gas is from a heating zone to a heat preservation zone during the heat preservation.
9. The method for growing a layered tungsten disulfide film on a photonic chip according to claim 1, wherein after the growth process is finished, the tube furnace is naturally cooled to complete the growth of the layered tungsten disulfide film on the photonic chip;
wherein, the tube furnace is heated, kept warm and the protection gas is introduced in the natural cooling process.
10. A film prepared by the method of any one of claims 1-9 for growing a layered tungsten disulfide film on a photonic chip.
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