CN117834032A - Burst driving and monitoring circuit and method based on external modulation and optical communication equipment - Google Patents

Burst driving and monitoring circuit and method based on external modulation and optical communication equipment Download PDF

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Publication number
CN117834032A
CN117834032A CN202311829919.7A CN202311829919A CN117834032A CN 117834032 A CN117834032 A CN 117834032A CN 202311829919 A CN202311829919 A CN 202311829919A CN 117834032 A CN117834032 A CN 117834032A
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laser
burst
circuit
power value
current source
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魏兴
华传林
刘庆
王俊威
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Dongguan Mentech Optical and Magnetic Co Ltd
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Dongguan Mentech Optical and Magnetic Co Ltd
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Priority to CN202311829919.7A priority Critical patent/CN117834032A/en
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Abstract

The invention belongs to the technical field of optical communication, and provides a burst driving and monitoring circuit and method based on external modulation and an optical network unit. The burst driving and monitoring circuit based on external modulation comprises a burst driving circuit, a light emitting device, a burst monitoring circuit and a controller; the burst driving circuit comprises a laser driving module, a first current source and a second current source, wherein the laser driving module comprises a first current source and a second current source; the inverter is used for controlling the on-off of the first controllable switch after inverting the externally input PWM control signal so as to realize burst control of light emission of the laser; the burst monitoring circuit is used for sampling the emitted light power value of the laser, locking the emitted light power value of the laser in the light emitting time period and monitoring the emitted light power value; the controller is connected with the burst monitoring circuit and is used for controlling the output current of the first current source in a feedback mode according to the monitoring result of the emitted light power value. The method can realize burst application of the high-speed 50Gbps and above optical modules and high-power, long-distance and high-speed signal transmission.

Description

Burst driving and monitoring circuit and method based on external modulation and optical communication equipment
Technical Field
The invention belongs to the technical field of optical communication, and particularly relates to a burst driving and monitoring circuit and method based on external modulation and optical communication equipment.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
The broadband access network flow shows explosive growth along with application scenes such as high-definition video, AR/VR, video conference and the like. The 50G PON is defined in the ITU-T G.hsp series standard, comprising: the general requirements are the generic transport convergence layer, the physical medium dependent layer and the TWDM (Timeand Wavelength Division Multiplexed) physical medium dependent layer. Wherein, the overall requirement is a single wavelength 50G TDM PON architecture, uplink TDMA/downlink TDM; support different ONU rate combinations, 50G/10G (home subscriber), 50G/25G (part of home and government enterprises), 50G/50G (high-end customer); support the traditional ODN grade; support and XG (S) -PON, 10GEPON and ODN coexistent deployment, smooth evolution; support distance of 20km (home, guest and government enterprises), 10 km (mobile bearing, delay sensitivity); three DBA modes, and the like.
Since loss and dispersion are main factors affecting the transmission distance of an optical module, a traditional DML laser (Directly Modulated Laser ) directly participates in driving the laser to emit light strongly and weakly due to a modulating signal, which causes frequency chirp in the modulating process, and the optical signal-to-noise ratio of the signal is relatively low. When the signal is transmitted to more than 50Gbps, the modulation rate and the complex modulation mode of the signal inhibit the transmission distance of the optical signal, and the transmission of 20km and more cannot be realized. The existing ONU optical module designed based on the DML laser is only suitable for the application of the speed of 25Gbps and below, but is not suitable for the burst application of the optical module with higher speed (such as 50Gbps and above).
Disclosure of Invention
In order to solve the technical problems in the background art, the invention provides a burst driving and monitoring circuit, a burst driving and monitoring method based on external modulation and an optical network unit, which can realize burst application of a higher-speed (such as 50Gbps and above) optical module and high-power, long-distance and high-speed signal transmission.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a first aspect of the invention provides an external modulation based burst drive and monitor circuit.
An external modulation based burst drive and monitor circuit, comprising:
a light emitting device, a burst driving circuit, a burst monitoring circuit, and a controller;
the light emitting device comprises a laser and a detector; the laser is used for generating laser; the detector is connected with the laser and is used for detecting the emitted light power value of the laser;
the burst driving circuit comprises a laser driving module; the laser driving module comprises a first current source, a first controllable switch and an inverter; the input end of the first controllable switch is connected with the first controllable switch, the control end of the first controllable switch is connected with the inverter, and the output end of the first controllable switch is connected with the laser; the first current source is used for outputting a current with a set size and transmitting the current to the laser through the first controllable switch; the inverter is used for controlling the on-off of the first controllable switch after inverting the PWM control signal input from the outside so as to realize burst control of light emission of the laser;
the burst monitoring circuit is connected with the detector and is used for sampling the emitted light power value of the laser detected by the detector, locking the emitted light power value of the laser in the light-emitting time period and monitoring the emitted light power value;
the controller is connected with the burst monitoring circuit and is used for feeding back and controlling the output current of the first current source according to the monitoring result of the emitted light power value so as to control the laser to stably emit light in a closed loop mode.
As one embodiment, the burst monitoring circuit comprises a mirror current source, a voltage sampling circuit, a holding circuit and a signal detection circuit; the input end of the mirror current source is connected with the detector, the output end of the mirror current source is connected with the input end of the voltage sampling circuit, and the output end of the voltage sampling circuit is respectively connected with the holding circuit and the signal detection circuit; the mirror current source is used for outputting a current signal generated by the detector;
the voltage sampling circuit is used for converting a current signal output by the mirror current source into a voltage signal and sampling the voltage signal to obtain the transmitting light power value of the laser;
the signal detection circuit is used for detecting a sampling signal of the voltage sampling circuit and outputting a high-low level state indication signal to confirm whether the laser is in a light-emitting time period or not;
the holding circuit is used for locking the emission light power value of the current emission time period of the laser until the next emission time period arrives, and locking the emission light power value of the next emission time period when the next emission time period arrives.
As one implementation mode, the holding circuit is further connected with a PWM pulse duty cycle adjusting circuit, and the PWM duty cycle adjusting circuit is used for performing delay processing on the falling edge of the input PWM signal, and the data conversion interface of the controller is enabled to sample the emission light power value when the emission light power of the laser is stable through the conduction of the switching tube; and performing acceleration response processing on the rising edge of the input PWM signal, and enabling the holding circuit to latch the sampled emission light power value of the laser in the last emission time period through quick turn-off of the switching tube.
As one embodiment, the light emitting device further comprises a modulator, the modulator being connected to the laser; the modulator is used for modulating laser light generated by the laser.
As one embodiment, the burst driving circuit further comprises a modulator driving module, and the modulator driving module is connected with the modulator; the modulator driving module is used for generating a driving signal of the modulator and controlling the light intensity absorption capacity of the modulator in cooperation with the adjustable negative bias voltage generated by the negative bias circuit.
As one embodiment, the modulator driving module comprises a digital signal processor and a modulation signal driver, wherein the digital signal processor is connected with the modulation signal driver; the digital signal processor is used for generating two paths of high-speed 25Gbps NRZ signals into one path of 50Gbps NRZ signals and transmitting the 50Gbps NRZ signals to the modulation signal driver.
As an embodiment, the light emitting device further includes a semiconductor optical amplifier, where the semiconductor optical amplifier is connected to an output terminal of the modulator, and the semiconductor optical amplifier is used to amplify the optical signal modulated by the modulator.
As an embodiment, the burst driving circuit further comprises a second current source, the second current source being connected to the semiconductor optical amplifier, the second current source being used for controlling the amplification factor of the semiconductor optical amplifier.
A second aspect of the invention provides a method of operation of an external modulation based burst drive and monitor circuit.
An operating method of a burst driving and monitoring circuit based on external modulation, comprising:
the first current source outputs current with set magnitude and transmits the current to the laser through the first controllable switch, and the inverter inverts an externally input PWM control signal and then controls the on-off of the first controllable switch so as to realize burst control of light emission of the laser;
the laser generates laser based on burst control, and the detector detects the emitted light power value of the laser;
the burst monitoring circuit samples the emitted light power value of the laser detected by the detector, locks the emitted light power value of the laser in the light emitting time period and monitors the emitted light power value;
and the controller feeds back and controls the output current of the first current source according to the monitoring result of the emitted light power value so as to control the laser to stably emit light in a closed loop.
A third aspect of the present invention provides an optical communication apparatus.
An optical communication device comprising an external modulation based burst drive and monitor circuit as described above.
The beneficial effects of the invention are as follows:
(1) According to the burst driving and monitoring circuit based on external modulation, after the PWM control signal input from the outside is inverted by using the inverter, the on-off of the first controllable switch is controlled, so that the burst control on whether the laser emits light or not is realized.
(2) The invention utilizes the driving signal of the modulator and the adjustable negative bias voltage to cooperatively control the light intensity absorption capacity of the modulator, can realize indirect modulation of the light signal, can effectively inhibit frequency chirp, enhance the signal-to-noise ratio of the light signal, reduce the problem of intersymbol interference caused by chromatic dispersion of the signal, and can realize burst application of the light module with the speed of 50Gbps and above.
(3) The burst driving and monitoring circuit based on external modulation is further provided with the semiconductor optical amplifier, and the modulated optical signal of the modulator is amplified in power by using the semiconductor optical amplifier, so that the burst driving and monitoring circuit based on external modulation is applicable to application scenes with high power spectral ratio, and the output optical power is greatly improved.
(4) The invention monitors the emitted light power value of the laser in the light emitting time period by locking the emitted light power value, and utilizes the monitoring result of the emitted light power value to feedback control the output current of the first current source, thereby realizing the stability of closed loop control of the light emitting of the laser.
(5) In the burst monitoring circuit, the falling edge of an input PWM signal is delayed by using a PWM pulse duty cycle regulating circuit, and the data conversion interface of the controller is sampled to the transmitting light power value when the transmitting light power of the laser is stable through the conduction of a switching tube; and the rising edge of the input PWM signal is subjected to acceleration response processing, and the switching tube is rapidly switched off, so that the holding circuit latches the sampled emission light power value of the laser in the last emission time period, and the stable value of the emission light power of the laser can be sampled every time of sampling is ensured.
Additional aspects of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention.
FIG. 1 is a schematic diagram of an external modulation based burst drive and monitor circuit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a burst drive circuit and a light emitting device according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a burst monitoring circuit according to an embodiment of the invention.
Detailed Description
The invention will be further described with reference to the drawings and examples.
It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the invention. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present invention. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
Example 1
According to fig. 1, the present embodiment provides a burst driving and monitoring circuit based on external modulation, which includes: burst driving circuit, light emitting device, burst monitoring circuit and controller.
The structures of the burst driving circuit, the light emitting device and the burst monitoring circuit and the working principle thereof are described in detail below with reference to the accompanying drawings:
(1) Burst driving circuit
As shown in fig. 1 and 2, the burst driving circuit of the present embodiment includes a laser driving module and a modulator driving module.
In this embodiment, the laser driving module includes a first current source, a first controllable switch, and an inverter; the input end of the first controllable switch is connected with the first controllable switch, the control end of the first controllable switch is connected with the inverter, and the output end of the first controllable switch is connected with the laser; the first current source is used for outputting a current with a set size and transmitting the current to the laser through the first controllable switch; the inverter is used for inverting an externally input PWM control signal (BEN signal) and then controlling the on-off of the first controllable switch so as to realize burst control of light emission of the laser.
In fig. 1, the first current source is implemented with a V/I current source.
The first current source is controlled by a controller, and the controller is used for controlling the current output by the first current source to the laser.
As shown in fig. 2, the first current source includes an operator U2B, resistors R5, R7, R8, R9, and R11, and a MOS transistor Q1A; the non-inverting input end of the arithmetic unit U2B is connected with the VDAC1 through R7, wherein the VDAC1 is a voltage type digital-to-analog converter interface of the controller and outputs a voltage signal; the inverting input end of the arithmetic unit U2B is grounded through R8; the connection point of the non-inverting input end of the arithmetic unit U2B and the R7 is also connected with the drain electrode of the MOS tube Q1A through the R11, and the drain electrode of the MOS tube Q1A is also connected with the R5 in series; the source electrode of the MOS tube Q1A is connected with a power supply VCC_4V, and the grid electrode of the MOS tube Q1A is connected with the output end of the arithmetic unit U2B; the drain electrode of the MOS transistor Q1A is also connected in series with R8 through R9.
Taking the first current source as an example, the working principle is as follows:
let the voltage at the left end of R5 resistor be V1, the voltage at the right end be V2, and the non-inverting input end of U2B be V P Equal to the voltage of the inverting input terminal as V N . The input resistance of the operational amplifier is infinite, and is obtained by a linear resistance network and a superposition law:
V N =V1*R8/(R8+R9);
V P =V2*R7/(R7+R11)+V DAC *R11/(R7+R11);
because the V/I conversion driving circuit introduces voltage series negative feedback, the virtual short V is satisfied P =V N Conditions are as follows:
V P -V N =V2*R7/(R7+R11)+V DAC *R11/(R7+R11)-V1*R8/(R8+R9)
when the condition R9/r8=r11/r7=k is satisfied, we get: v1-v2=k×v DAC
The drive current Ibias magnitude: ibias= (V1-V2)/r5=kv DAC /R5。
According to fig. 2, the controllable switch is implemented by a MOS transistor Q1B.
Wherein the inverter is implemented by resistors R13, R14, R17 and transistor U6.
The BEN burst control principle is as follows:
when BEN is low, the triode U6 is cut off, and the collector outputs high level. At this time, the N-channel MOS transistor Q1B is turned on, and the laser emits light normally.
When BEN is high, the triode U6 is conducted, and the collector electrode outputs low level. At this time, the N-channel MOS transistor Q1B is turned off, and the laser does not emit light.
In this embodiment, the modulator driving module is connected to the modulator, and is configured to generate a driving signal of the modulator, and cooperate with an adjustable negative bias voltage generated by the negative bias circuit to control an absorption capacity of the modulator on light intensity.
Specifically, the modulator driving module comprises a digital signal processor and a modulation signal driver, and the digital signal processor is connected with the modulation signal driver; the digital signal processor is used for generating two paths of high-speed 25Gbps NRZ signals into one path of 50Gbps NRZ signals and transmitting the 50Gbps NRZ signals to the modulation signal driver.
As shown in fig. 2, the digital signal processor is implemented using U3. The modulation signal driver is implemented with U1.
In the implementation process, the negative pressure bias circuit is also connected with the controller, and the negative pressure bias circuit is used for: and converting the positive voltage output by the digital-analog interface of the controller into negative bias voltage and outputting the negative bias voltage.
Wherein, in the setting range: the lower the adjustable negative bias voltage, the stronger the light absorption capacity of the modulator; the higher the tunable negative bias voltage, the weaker the light absorbing capability of the modulator.
According to fig. 2, the negative bias circuit is implemented with an operational amplifier U2A, resistors R1, R2, and R4;
r2 is connected in series between the inverting input end of the operational amplifier U2A and the output of the controller; r4 is connected to the non-inverting input end of the operational amplifier U2A and is directly grounded; the resistor R1 is connected between the inverting input terminal and the output terminal of the operational amplifier U2A.
Wherein, vcc of the operational amplifier U2A is connected with GND, and GND is connected with negative Vcc.
Output voltage vout= -V of operational amplifier U2A DAC *R1/R2;
When V is DAC The larger the output, the lower the negative bias voltage of the modulator EAM. Wherein V is DAC The voltage output by the controller, i.e., the inverting input voltage of the operational amplifier U2A.
(2) Light emitting device
As shown in fig. 1 and 2, the light emitting device of the present embodiment includes a laser, a modulator, a semiconductor optical amplifier, and a detector; the laser is used for generating laser; the modulator is connected with the laser and used for modulating laser generated by the laser; the semiconductor optical amplifier is connected with the output end of the modulator and is used for amplifying the optical signal modulated by the modulator; the detector is connected with the laser and is used for detecting the emitted light power value of the laser.
In fig. 1, the laser is implemented with a DFB (Distributed Feedback Lase, distributed feedback) laser; the modulator is implemented by an EAM (Electro Absorption Modulato, electro-absorption) modulator; the detector can be realized by using an MPD backlight monitoring detector. The SOA (Semi-conductor Optical Amplifie) amplifier in fig. 1 is a semiconductor optical amplifier.
It should be noted that the laser, modulator, semiconductor optical amplifier and detector may be implemented by using existing technologies, and will not be described in detail herein.
In this embodiment, the amplification factor of the semiconductor optical amplifier is controlled by the second current source.
In a specific implementation process, the second current source is further connected to a controller, and the controller is used for controlling the second current source to adjust the output current of the second current source. In fig. 1, the second current source is implemented with a V/I current source.
As shown in fig. 2, the second current source is implemented with an operational amplifier U5A.
The laser, modulator, semiconductor optical amplifier and detector are all integrated in U4.
(3) Burst monitoring circuit
According to the embodiments shown in fig. 1 and 3, the burst monitoring circuit is connected to the detector, and is configured to sample the value of the emitted light of the laser detected by the detector, lock the value of the emitted light of the laser in the light emitting period, and monitor the value of the emitted light;
the controller is connected with the burst monitoring circuit and is used for feeding back and controlling the output current of the first current source according to the monitoring result of the emitted light power value so as to control the laser to stably emit light in a closed loop mode.
The burst monitoring circuit comprises a mirror current source, a voltage sampling circuit, a holding circuit and a signal detection circuit; the input end of the mirror current source is connected with the detector, the output end of the mirror current source is connected with the input end of the voltage sampling circuit, and the output end of the voltage sampling circuit is respectively connected with the holding circuit and the signal detection circuit;
the mirror current source is used for outputting a current signal generated by the detector; the voltage sampling circuit is used for converting a current signal output by the mirror current source into a voltage signal and sampling the voltage signal to obtain the transmitting light power value of the laser; the signal detection circuit is used for detecting a sampling signal of the voltage sampling circuit and outputting a high-low level state indication signal to confirm whether the laser is in a light-emitting time period or not; the holding circuit is used for locking the emission light power value of the current emission time period of the laser until the next emission time period arrives, and locking the emission light power value of the next emission time period when the next emission time period arrives.
The negative supply voltage acts as the supply voltage for the mirrored current source. As shown in fig. 3, the mirrored current sources are implemented using U8 and U9. Wherein U8 and U9 are two identical NPN triodes, due to U9 tube U BEO =U CEO So that it can only be operated in an enlarged state. I.e. mirrored current source output current imon=i C +2I B =I C +2*I C /β=I C * (beta+1)/beta; imon and I are due to the amplification factor beta being at least 100 times C Approximately equal. I C And I B Collector and base currents for U8 and U9.
The holding circuit is also connected with a PWM pulse duty ratio regulating circuit, and the PWM duty ratio regulating circuit is used for carrying out delay processing on the falling edge of an input PWM signal, and the data conversion interface of the controller is enabled to sample the transmitting light power value when the transmitting light power of the laser is stable through the conduction of a switching tube (such as a us-level delay switching tube); and performing acceleration response processing on the rising edge of the input PWM signal, and enabling the holding circuit to latch the sampled emission light power value of the laser in the last emission time period through quick turn-off of the switching tube.
Sampling voltage U ADC =2.5-R18*I C The larger the backlight current, the smaller the data conversion interface ADC (Analog to Digital Converter) of the controller samples the voltage. Let the sampling ADC value be X, and adopt the inverse formula (1-X/4095) 2.4.
A holding circuit: the holding circuit is composed of 2 voltage followers, 1 high-speed switch and a PWM duty ratio regulating circuit. Wherein, U5B and U7A are both by having operational amplifier to constitute voltage follower, and the characteristics are that input resistance is infinite, and output resistance is little, and response is fast.
When the BEN input jumps from high level to low level, C10 discharges through R19 resistor, the gate voltage of MOS transistor Q2 gradually decreases, and RC discharge time constant determines delay sampling time. When the voltage is lower than the threshold value of the P-channel MOS transistor, the MOS transistor Q2 is conducted to rapidly charge the capacitor C9, and the sampling time is the time at the moment. When the BEN input jumps from low to high, C10 is first charged quickly through diode D2, and MOS transistor Q2 is turned off quickly, which is the hold time. Different delay treatments of the rising and falling processes of BEN control signals are realized through an RC delay circuit formed by a diode D2, a resistor R19 and a capacitor C10, so that the sampling time of us-level delay and the ns-level quick holding time are realized.
A transmission signal detection circuit:
when the in-phase input voltage Up of U7B is greater than the inverting input voltage un=2.5×r21/(r21+r20), the voltage comparator formed by U7B outputs a tx_sd high level indicating that the emitted light signal is normal, whereas the voltage comparator outputs a tx_sd low level indicating that no emitted signal is emitted.
Example two
The embodiment provides a working method of a burst driving and monitoring circuit based on external modulation, which comprises the following steps:
step 1: the first current source outputs current with set magnitude and transmits the current to the laser through the first controllable switch, and the inverter inverts an externally input PWM control signal and then controls the on-off of the first controllable switch so as to realize burst control of light emission of the laser;
step 2: the laser generates constant laser based on burst control, and the detector detects the emitted light power value of the laser;
step 3: the burst monitoring circuit samples the emitted light power value of the laser, locks the emitted light power value of the laser in the light emitting time period and monitors the emitted light power value;
and the controller feeds back and controls the output current of the first current source according to the monitoring result of the emitted light power value so as to control the laser to stably emit light in a closed loop.
The working method of the burst driving and monitoring circuit based on external modulation realizes burst application of the high-speed 50Gbps and above optical modules and high-power, long-distance and high-speed signal transmission.
Example III
The present embodiment provides an optical communication apparatus including the burst drive and monitor circuit based on external modulation as described above.
It should be noted that, the optical network unit of this embodiment may be implemented by using the prior art except for the burst driving and monitoring circuit based on external modulation, which is not described in detail herein.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. An external modulation based burst driving and monitoring circuit comprising:
a light emitting device, a burst driving circuit, a burst monitoring circuit, and a controller;
the light emitting device comprises a laser and a detector; the laser is used for generating laser; the detector is connected with the laser and is used for detecting the emitted light power value of the laser;
the burst driving circuit comprises a laser driving module; the laser driving module comprises a first current source, a first controllable switch and an inverter; the input end of the first controllable switch is connected with the first controllable switch, the control end of the first controllable switch is connected with the inverter, and the output end of the first controllable switch is connected with the laser; the first current source is used for outputting a current with a set size and transmitting the current to the laser through the first controllable switch; the inverter is used for controlling the on-off of the first controllable switch after inverting the PWM control signal input from the outside so as to realize burst control of light emission of the laser;
the burst monitoring circuit is connected with the detector and is used for sampling the emitted light power value of the laser detected by the detector, locking the emitted light power value of the laser in the light-emitting time period and monitoring the emitted light power value;
the controller is connected with the burst monitoring circuit and is used for feeding back and controlling the output current of the first current source according to the monitoring result of the emitted light power value so as to control the laser to stably emit light in a closed loop mode.
2. The external modulation based burst driving and monitoring circuit according to claim 1, wherein the burst monitoring circuit comprises a mirrored current source, a voltage sampling circuit, a holding circuit, and a signal detection circuit; the input end of the mirror current source is connected with the detector, the output end of the mirror current source is connected with the input end of the voltage sampling circuit, and the output end of the voltage sampling circuit is respectively connected with the holding circuit and the signal detection circuit;
the mirror current source is used for outputting a current signal generated by the detector;
the voltage sampling circuit is used for converting a current signal output by the mirror current source into a voltage signal and sampling the voltage signal to obtain the transmitting light power value of the laser;
the signal detection circuit is used for detecting a sampling signal of the voltage sampling circuit and outputting a high-low level state indication signal to confirm whether the laser is in a light-emitting time period or not;
the holding circuit is used for locking the emission light power value of the current emission time period of the laser until the next emission time period arrives, and locking the emission light power value of the next emission time period when the next emission time period arrives.
3. The burst driving and monitoring circuit based on external modulation according to claim 2, wherein the holding circuit is further connected to a PWM pulse duty cycle adjusting circuit, and the PWM duty cycle adjusting circuit is configured to delay the falling edge of the input PWM signal, and sample, through conduction of the switching tube, the data conversion interface of the controller to the emission light power value when the emission light power of the laser is stable; and performing acceleration response processing on the rising edge of the input PWM signal, and enabling the holding circuit to latch the sampled emission light power value of the laser in the last emission time period through quick turn-off of the switching tube.
4. The external modulation based burst drive and monitoring circuit of claim 1, wherein the light emitting device further comprises a modulator, the modulator being coupled to a laser; the modulator is used for modulating laser light generated by the laser.
5. The external modulation based burst drive and monitoring circuit of claim 4, wherein the burst drive circuit further comprises a modulator drive module, the modulator drive module coupled to the modulator; the modulator driving module is used for generating a driving signal of the modulator and controlling the light intensity absorption capacity of the modulator in cooperation with the adjustable negative bias voltage generated by the negative bias circuit.
6. The external modulation based burst drive and monitoring circuit of claim 5, wherein the modulator drive module comprises a digital signal processor and a modulated signal driver, the digital signal processor being coupled to the modulated signal driver; the digital signal processor is used for generating two paths of high-speed 25Gbps NRZ signals into one path of 50Gbps NRZ signals and transmitting the 50Gbps NRZ signals to the modulation signal driver.
7. The external modulation based burst drive and monitoring circuit of claim 1, wherein the light emitting device further comprises a semiconductor optical amplifier coupled to the output of the modulator, the semiconductor optical amplifier configured to amplify the modulated optical signal from the modulator.
8. The external modulation based burst drive and monitor circuit according to claim 7, wherein the burst drive circuit further comprises a second current source coupled to the semiconductor optical amplifier, the second current source for controlling the amplification factor of the semiconductor optical amplifier.
9. A method of operation of an external modulation based burst drive and monitoring circuit according to any one of claims 1 to 8, comprising:
the first current source outputs current with set magnitude and transmits the current to the laser through the first controllable switch, and the inverter inverts an externally input PWM control signal and then controls the on-off of the first controllable switch so as to realize burst control of light emission of the laser;
the laser generates laser based on burst control, and the detector detects the emitted light power value of the laser;
the burst monitoring circuit samples the emitted light power value of the laser detected by the detector, locks the emitted light power value of the laser in the light emitting time period and monitors the emitted light power value;
and the controller feeds back and controls the output current of the first current source according to the monitoring result of the emitted light power value so as to control the laser to stably emit light in a closed loop.
10. An optical communication device comprising the external modulation based burst drive and monitoring circuit of any one of claims 1-8.
CN202311829919.7A 2023-12-27 2023-12-27 Burst driving and monitoring circuit and method based on external modulation and optical communication equipment Pending CN117834032A (en)

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