CN117826537A - Light source mask collaborative optimization method - Google Patents
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- 238000005457 optimization Methods 0.000 title claims abstract description 55
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- 210000001747 pupil Anatomy 0.000 claims abstract description 34
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 9
- 238000003384 imaging method Methods 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 239000003990 capacitor Substances 0.000 description 1
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Abstract
A light source mask collaborative optimization method comprises the following steps: providing an initial light source; obtaining optimal light source position information corresponding to the mask layout according to an optimal light source position formula; adjusting the initial light source according to the optimal light source information to obtain a pre-optimized light source; and optimizing the pre-optimized light source according to the light source mask collaborative optimization model to obtain an optimized light source. Since for any one of the pattern groups with a fixed spatial period, the diffracted light and the incident light are completely symmetrical when the relationship between the position of the light source point in the pupil and the spatial period conforms to the optimal light source position formula, the imaging has an optimal contrast. Therefore, the optimal light source position information corresponding to the mask layout is obtained according to the optimal light source position formula, so that the obtained position distribution of the pre-optimized light source and the finally obtained position distribution of the optimized light source both accord with the optimal light source position formula, the time of optimizing the pre-optimized light source by the light source mask collaborative optimization model is effectively reduced, and the convergence rate of optimization is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a light source mask collaborative optimization method.
Background
In the field of semiconductors, photolithography is an important process in the production of integrated circuits, and in particular, a mask pattern on a mask plate can be imaged onto an object to be processed by exposure according to a certain proportion. With the development of integrated circuits, the size of semiconductor devices is gradually reduced, and there is a growing need for increasing the photolithography resolution and the photolithography Process Window (PW), which refers to the exposure dose and defocus range that ensure that a mask pattern can be correctly copied onto a silicon wafer, and may contain three kinds of information: imaging accuracy, exposure, and depth of focus.
In the prior art, the photolithography process window can be effectively increased by optimizing the mask and the light source parameters, for example, after 28nm technology node, a light source mask collaborative optimization (Source Mask Optimization, SMO) method is widely adopted.
However, there are still a number of problems in the existing light source mask co-optimization process.
Disclosure of Invention
The invention solves the technical problem of providing a light source mask collaborative optimization method to improve the convergence rate of light source mask collaborative optimization.
In order to solve the technical problems, the technical scheme of the invention provides a light source mask collaborative optimization method, which comprises the following steps: providing an initial light source; obtaining optimal light source position information corresponding to the mask layout according to an optimal light source position formula; adjusting the initial light source according to the optimal light source information to obtain a pre-optimized light source; and carrying out optimization treatment on the pre-optimized light source according to the light source mask collaborative optimization model to obtain an optimized light source.
Optionally, the mask layout has a plurality of mask pattern groups arranged in different manners.
Optionally, the method for obtaining the optimal light source position information corresponding to the mask layout according to the optimal light source position formula includes: the optimal light source position formula is: sigma=λ/(2p×na), obtaining a parameter λ, a parameter P, and a parameter NA in the optimal light source position formula, where the parameter λ is a wavelength of the initial light source; the parameter P is the center-to-center distance dimension of adjacent mask patterns in each mask pattern group; the parameter NA is the numerical aperture of the photoetching machine; substituting the acquired parameter lambda, parameter P and parameter NA into the optimal light source formula to acquire optimal light source position information sigma.
Optionally, the mask pattern groups arranged in different manners include: one or more of the first mask pattern group, the second mask pattern group, and the third mask pattern group.
Optionally, the first mask pattern group includes: the first mask patterns extend along a second direction, and the first direction is perpendicular to the second direction; the center-to-center spacing dimension of adjacent mask patterns is: and the center-to-center spacing dimension of the adjacent first mask patterns in the first direction.
Optionally, the second mask pattern group includes: the second mask patterns are arranged in parallel along a second direction, extend along a first direction and are perpendicular to the second direction; the center-to-center spacing dimension of adjacent mask patterns is: and the center-to-center spacing dimension of the adjacent second mask patterns in the second direction.
Optionally, the third mask pattern group includes: a plurality of third mask patterns arrayed along a first direction and a second direction respectively, wherein the first direction is perpendicular to the second direction; the center-to-center spacing dimension of adjacent mask patterns is: a center-to-center spacing dimension of adjacent third mask patterns in the first direction, and a center-to-center spacing dimension of adjacent third mask patterns in the second direction.
Optionally, the method for obtaining the pre-optimized light source includes adjusting the initial light source according to the optimal light source information: providing a light source width dimension d; light source points within the pupil along the range of distances sigma-d/2 to sigma+d/2 between the pupil diameters in the direction of arrangement of the mask patterns, wherein the extending direction of the pupil diameters is perpendicular to the direction of arrangement of the mask patterns, are given light intensity values.
Optionally, the method for obtaining the pre-optimized light source further includes adjusting the initial light source according to the optimal light source information: light source points within the pupil in the range of sigma/2-d/2 to sigma/2+d/2 along the distance between the mask pattern arrangement direction and the pupil diameter are given light intensity values.
Optionally, the method for obtaining the pre-optimized light source further includes adjusting the initial light source according to the optimal light source information: light intensity values are given to light source points within the pupil along the distance d/2 between the mask pattern arrangement direction and the pupil diameter.
Optionally, the light intensity value is 1.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the light source mask collaborative optimization method provided by the technical scheme of the invention, for any graph group with a fixed space period (namely, the center-to-center distance dimension of adjacent graphs), when the relation between the position of a light source point in a pupil and the space period accords with an optimal light source position formula, diffracted light and incident light are completely symmetrical, and imaging has optimal contrast. Therefore, obtaining the optimal light source position information corresponding to the mask layout according to the optimal light source position formula; and adjusting the initial light source according to the optimal light source information to obtain a pre-optimized light source. Because the obtained position distribution of the pre-optimized light source and the finally obtained position distribution of the optimized light source both accord with the optimal light source position formula, the time for optimizing the pre-optimized light source by the light source mask collaborative optimization model can be effectively reduced, and the convergence rate of light source mask collaborative optimization is improved.
Further, the initial light source is adjusted according to the optimal light source information, and the method for obtaining the pre-optimized light source further comprises the following steps: light source points within the pupil along the range of distances sigma/2-d/2 to sigma/2+d/2 between the mask pattern arrangement direction and the pupil diameter are given light intensity values; light intensity values are given to light source points within the pupil along the distance d/2 between the mask pattern arrangement direction and the pupil diameter. Because the mask pattern groups with different arrangement modes are arranged in the mask layout, if each mask pattern group selects the corresponding optimal light source position, certain influence is often caused on the exposure and development of other mask pattern groups. And the following light source mask collaborative optimization model also considers the factors which can generate mutual influence of different mask pattern groups when optimizing, and abandons the optimal light source positions corresponding to part of mask pattern groups. Therefore, by giving light intensity values to light source points in the pupil along the distance sigma/2-d/2 to sigma/2+d/2 between the pupil diameter and the mask pattern arrangement direction, and within the range of d/2, more suboptimal light source position selection is provided for the subsequent light source mask collaborative optimization model, so that the optimization time from the pre-optimized light source to the final optimized light source is shortened, and the convergence speed of the light source mask collaborative optimization is further improved.
Drawings
FIG. 1 is a flow chart of a light source mask co-optimization method according to an embodiment of the invention;
fig. 2 to 8 are schematic structural diagrams of a capacitor structure according to an embodiment of the present invention.
Detailed Description
As described in the background art, there are still many problems in the existing light source mask collaborative optimization process. The following will specifically explain.
In the existing light source mask collaborative optimization software (namely SMO software), the light source optimization flow is as follows: starting from an initial light source (generally conventional illumination or annular illumination), firstly performing unlimited continuous light source/mask plate optimization, and adding limitation on the light source and limitation on the mask plate on the basis of the initial optimal solution after finding the initial optimal solution. An optimized output is finally obtained. In order to avoid finding a locally optimal solution instead of a globally optimal solution, a one-step "restart" is designed in SMO software, i.e. starting from the original light source, searching for the optimal solution in a large range again. Although the existence of the restart step can ensure that the final output is the globally optimal solution to the greatest extent, the optimization mode of the full-range search greatly prolongs the speed of software solution. Because the initial optimization of the light source is based on the initial light source, and the requirements of different lithography levels on the light source are greatly different, if the initial light source is set unreasonably, the difference between the initial light source and the optimal light source required by the graph of the lithography level is large, and the speed of searching the global optimal solution can be greatly reduced. Meanwhile, under certain extreme conditions, even the existence of the "restart" step cannot guarantee that the final output is the globally optimal solution due to the limitation of the total number of the resolving steps and the resolving time.
In order to solve the problems, the invention provides a light source mask collaborative optimization method, which obtains the optimal light source position information corresponding to a mask layout according to an optimal light source position formula; and adjusting the initial light source according to the optimal light source information to obtain a pre-optimized light source. Because the obtained position distribution of the pre-optimized light source and the finally obtained position distribution of the optimized light source both accord with the optimal light source position formula, the time for optimizing the pre-optimized light source by the light source mask collaborative optimization model can be effectively reduced, and the convergence rate of light source mask collaborative optimization is improved.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 is a flowchart of a light source mask collaborative optimization method according to an embodiment of the present invention, including:
step S101, providing an initial light source;
step S102, obtaining optimal light source position information corresponding to a mask layout according to an optimal light source position formula;
step S103, adjusting the initial light source according to the optimal light source information to obtain a pre-optimized light source;
and step S104, optimizing the pre-optimized light source according to the light source mask collaborative optimization model to obtain an optimized light source.
The steps of the light source mask collaborative optimization method are described in detail below with reference to the accompanying drawings.
Fig. 2 to fig. 8 are schematic structural diagrams of steps of a specific process of a light source mask collaborative optimization method according to an embodiment of the present invention.
Referring to fig. 2, an initial light source 100 is provided.
In this embodiment, the initial light source 100 is an original light source that is not optimized, and is typically a conventional illumination light source or an annular illumination light source.
Referring to fig. 3, after the initial light source 100 is provided, the optimal light source position information σ corresponding to the mask layout is obtained according to an optimal light source position formula.
It should be noted that, in this embodiment, for any pattern group having a fixed spatial period (i.e., the dimension of the center-to-center distance between adjacent patterns), when the relationship between the position of the light source point in the pupil and the spatial period conforms to the optimal light source position formula, the diffracted light and the incident light are completely symmetrical, and the imaging has the optimal contrast. The contrast of the aerial image formed by interference at the defocus position is subjected to cos (Δk z z+Φ), wherein Δk z Is the difference between the Z-direction wave vector component of the incident light and the diffracted light. Φ is the initial phase difference of the diffracted light and the incident light. Δk only when the incident and diffracted light are perfectly symmetrical z The aerial image has the best contrast ratio at 0, and the contrast ratio after defocusing is not reduced. Therefore, the position distribution of the optimized light source obtained after the subsequent optimization through the source mask collaborative optimization model accords with the optimal light source position formula.
In this embodiment, the mask layout has a plurality of mask pattern groups arranged in different manners.
In this embodiment, the method for obtaining the optimal light source position information σ corresponding to the mask layout according to the optimal light source position formula includes: the optimal light source position formula is: sigma=λ/(2p×na), obtaining a parameter λ, a parameter P, and a parameter NA in the optimal light source position formula, where the parameter λ is a wavelength of the initial light source 100; the parameter P is the center-to-center distance dimension of adjacent mask patterns in each mask pattern group; the parameter NA is the numerical aperture of the photoetching machine; substituting the acquired parameter lambda, parameter P and parameter NA into the optimal light source formula to acquire optimal light source position information sigma.
The mask pattern groups arranged in different modes comprise: one or more of the first mask pattern group 201, the second mask pattern group 202, and the third mask pattern group 203.
Referring to fig. 4, the first mask pattern group 201 includes: a plurality of first mask patterns 201a arranged in parallel along a first direction X, wherein the first mask patterns 201a extend along a second direction Y, and the first direction X is perpendicular to the second direction Y; the center-to-center distance dimension P of adjacent mask patterns is: the center-to-center spacing dimension in the first direction X of adjacent first mask patterns 201 a.
Referring to fig. 5, the second mask pattern group 202 includes: a plurality of second mask patterns 202a arranged in parallel along a second direction Y, wherein the second mask patterns 202a extend along a first direction X, and the first direction X is perpendicular to the second direction Y; the center-to-center distance dimension P of adjacent mask patterns is: and a center-to-center spacing dimension of adjacent second mask patterns 202a in the second direction Y.
Referring to fig. 6, the third mask pattern group 203 includes: a plurality of third mask patterns 203a arranged in an array along a first direction X and a second direction Y, respectively, wherein the first direction X is perpendicular to the second direction Y; the center-to-center distance dimension P of adjacent mask patterns is: a center-to-center pitch dimension of the adjacent third mask pattern 203a in the first direction X, and a center-to-center pitch dimension of the adjacent third mask pattern 203a in the second direction Y.
In this embodiment, the mask pattern groups arranged in different ways include: a first mask pattern group 201 and a second mask pattern group 202.
Referring to fig. 7, the initial light source 100 is adjusted according to the optimal light source information σ to obtain a pre-optimized light source 300.
In this embodiment, since the obtained position distribution of the pre-optimized light source 300 and the obtained position distribution of the optimized light source finally conform to the optimal light source position formula, the time for optimizing the pre-optimized light source 300 by the light source mask collaborative optimization model can be effectively reduced in the following process, and the convergence rate of the light source mask collaborative optimization is improved.
It should be noted that, in the present embodiment, σ in the optimal light source position formula is not a radius in a conventional sense, but needs to be calculated separately according to a plurality of first mask patterns 201a arranged in parallel along the first direction X and a plurality of second mask patterns 202a arranged in parallel along the second direction Y.
In this embodiment, the method for adjusting the initial light source 100 according to the optimal light source information σ to obtain the pre-optimized light source 300 includes: providing a light source width dimension d; light source points within the pupil along the range of distances sigma-d/2 to sigma+d/2 between the pupil diameters in the mask pattern arrangement direction, wherein the extending direction of the pupil diameter R is perpendicular to the mask pattern arrangement direction, are given light intensity values.
In this embodiment, the method for obtaining the pre-optimized light source 300 further includes adjusting the initial light source 100 according to the optimal light source information σ: light source points within the pupil in the range of sigma/2-d/2 to sigma/2+d/2 along the distance between the mask pattern arrangement direction and the pupil diameter R are given light intensity values.
In this embodiment, the method for obtaining the pre-optimized light source 300 further includes adjusting the initial light source 100 according to the optimal light source information σ: light intensity values are given to light source points within the pupil along the distance d/2 between the mask pattern arrangement direction and the pupil diameter R.
In this embodiment, since the mask pattern groups have different arrangements in the mask layout, if each mask pattern group selects the corresponding optimal light source position, a certain effect is often caused on exposure and development of other mask pattern groups. And the following light source mask collaborative optimization model also considers the factors which can generate mutual influence of different mask pattern groups when optimizing, and abandons the optimal light source positions corresponding to part of mask pattern groups. Therefore, by giving light intensity values to light source points in the pupil along the distance sigma/2-d/2 to sigma/2+d/2 and d/2 range between the pupil diameter R and the mask pattern arrangement direction, more sub-optimal light source position selection is provided for the subsequent light source mask collaborative optimization model, so that the optimization time from the pre-optimization light source 300 to the final optimization light source is shortened, and the convergence speed of the light source mask collaborative optimization is further improved.
In this embodiment, the width d of the light source may be in the range of 0.08-0.12 based on empirical values
In the present embodiment, the light source points within the range of σ -d/2 to σ+d/2, σ/2-d/2 to σ/2+d/2, d/2 along the mask pattern arrangement direction within the pupil are given the light intensity value 1, and the light source points within the rest of the pupil are not given the light intensity value, that is, the light intensity value is 0.
Referring to fig. 8, the pre-optimized light source 300 is optimized according to a light source mask collaborative optimization model to obtain an optimized light source 400.
In this embodiment, the light source mask collaborative optimization model performs optimization calculation based on the pre-optimized light source 300, for example, considering the factors that different mask pattern groups can generate mutual influence, discarding the optimal light source positions corresponding to part of mask pattern groups, and selecting the light source positions of suboptimal level; such as readjusting the intensity value within the light source position.
The present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (11)
1. A light source mask collaborative optimization method is characterized by comprising the following steps:
providing an initial light source;
obtaining optimal light source position information corresponding to the mask layout according to an optimal light source position formula;
adjusting the initial light source according to the optimal light source information to obtain a pre-optimized light source;
and carrying out optimization treatment on the pre-optimized light source according to the light source mask collaborative optimization model to obtain an optimized light source.
2. The method of collaborative optimization of a light source mask according to claim 1, wherein the mask layout has a plurality of differently arranged mask pattern sets.
3. The method for collaborative optimization of a mask for a light source according to claim 2, wherein the method for obtaining optimal light source position information corresponding to the mask layout according to an optimal light source position formula comprises: the optimal light source position formula is: sigma=λ/(2p×na), obtaining a parameter λ, a parameter P, and a parameter NA in the optimal light source position formula, where the parameter λ is a wavelength of the initial light source; the parameter P is the center-to-center distance dimension of adjacent mask patterns in each mask pattern group; the parameter NA is the numerical aperture of the photoetching machine; substituting the acquired parameter lambda, parameter P and parameter NA into the optimal light source formula to acquire optimal light source position information sigma.
4. A light source mask collaborative optimization method according to claim 3, wherein the plurality of differently arranged mask pattern groups comprises: one or more of the first mask pattern group, the second mask pattern group, and the third mask pattern group.
5. The method of claim 4, wherein the first mask pattern set comprises: the first mask patterns extend along a second direction, and the first direction is perpendicular to the second direction; the center-to-center spacing dimension of adjacent mask patterns is: and the center-to-center spacing dimension of the adjacent first mask patterns in the first direction.
6. The method of claim 4, wherein the second mask pattern set comprises: the second mask patterns are arranged in parallel along a second direction, extend along a first direction and are perpendicular to the second direction; the center-to-center spacing dimension of adjacent mask patterns is: and the center-to-center spacing dimension of the adjacent second mask patterns in the second direction.
7. The method of claim 4, wherein the third mask pattern set comprises: a plurality of third mask patterns arrayed along a first direction and a second direction respectively, wherein the first direction is perpendicular to the second direction; the center-to-center spacing dimension of adjacent mask patterns is: a center-to-center spacing dimension of adjacent third mask patterns in the first direction, and a center-to-center spacing dimension of adjacent third mask patterns in the second direction.
8. The method of claim 3, wherein adjusting the initial light source according to the optimal light source information to obtain a pre-optimized light source comprises: providing a light source width dimension d; light source points within the pupil along the range of distances sigma-d/2 to sigma+d/2 between the pupil diameters in the direction of arrangement of the mask patterns, wherein the extending direction of the pupil diameters is perpendicular to the direction of arrangement of the mask patterns, are given light intensity values.
9. The method of claim 8, wherein adjusting the initial light source based on the optimal light source information to obtain a pre-optimized light source further comprises: light source points within the pupil in the range of sigma/2-d/2 to sigma/2+d/2 along the distance between the mask pattern arrangement direction and the pupil diameter are given light intensity values.
10. The method of claim 8, wherein adjusting the initial light source based on the optimal light source information to obtain a pre-optimized light source further comprises: light intensity values are given to light source points within the pupil along the distance d/2 between the mask pattern arrangement direction and the pupil diameter.
11. The light source mask co-optimization method according to any one of claims 8 to 10, wherein the light intensity value is 1.
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