CN117817448A - Grinding and polishing processing method for removing surface of insulating wafer by abrasive particle discharge induction - Google Patents
Grinding and polishing processing method for removing surface of insulating wafer by abrasive particle discharge induction Download PDFInfo
- Publication number
- CN117817448A CN117817448A CN202410244827.0A CN202410244827A CN117817448A CN 117817448 A CN117817448 A CN 117817448A CN 202410244827 A CN202410244827 A CN 202410244827A CN 117817448 A CN117817448 A CN 117817448A
- Authority
- CN
- China
- Prior art keywords
- polishing
- grinding
- insulating wafer
- wafer
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 86
- 239000002245 particle Substances 0.000 title claims abstract description 61
- 238000000227 grinding Methods 0.000 title claims abstract description 54
- 230000006698 induction Effects 0.000 title claims abstract description 15
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000002923 metal particle Substances 0.000 claims abstract description 28
- 239000012224 working solution Substances 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 16
- 238000010892 electric spark Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 13
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 13
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 12
- 239000006061 abrasive grain Substances 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000006185 dispersion Substances 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 7
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000005484 gravity Effects 0.000 claims description 6
- 230000002393 scratching effect Effects 0.000 claims description 6
- 239000011780 sodium chloride Substances 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 4
- 239000007767 bonding agent Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 37
- 238000012545 processing Methods 0.000 abstract description 11
- 230000006866 deterioration Effects 0.000 abstract description 8
- 239000002344 surface layer Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 49
- 239000000758 substrate Substances 0.000 description 14
- 230000003746 surface roughness Effects 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 239000004814 polyurethane Substances 0.000 description 9
- 229920002635 polyurethane Polymers 0.000 description 9
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004439 roughness measurement Methods 0.000 description 3
- 238000006748 scratching Methods 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/002—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using electric current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0054—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by impressing abrasive powder in a matrix
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a grinding and polishing processing method for removing the surface of an insulating wafer by abrasive particle discharge induction, which comprises the steps of preparing a grinding and polishing disc with soft abrasive particles and metal particles, adsorbing the metal powder in a working solution on the surface of a workpiece by utilizing a magnetic field to form a metal layer, controlling a pulse power supply to form an electric spark discharge channel between the metal layer and the metal particles on the surface layer of the grinding and polishing disc, and enabling the metal layer and the metal particles on the surface layer of the grinding and polishing disc to generate high temperature to induce only the surface layer of the insulating wafer to melt and deteriorate without generating cracks, so that the soft abrasive particles remove a deterioration layer, thereby remarkably improving the processing efficiency of a large-size insulating wafer, obtaining the surface of the insulating wafer without damage, realizing the ultra-precise processing of the insulating wafer, particularly forming the deterioration layer and the metal layer on the surface of the workpiece, and achieving faster removing operation and more effective wafer protection by at least two layers.
Description
Technical Field
The invention relates to the technical field of polishing and grinding, in particular to a polishing and grinding processing method for removing the surface of an insulating wafer by means of abrasive particle discharge induction.
Background
With the rapid development of technology, the evolution of semiconductor materials has had a profound effect on the electronics industry, particularly in the field of silicon wafers.
And the polishing and grinding process becomes critical to the process of preparing the insulating wafer. Conventional grinding methods face a number of challenges due to their high hardness, brittleness and chemical stability, including slow grinding rates and the need to ensure that the surface is almost free of damage. There is an urgent need for more innovative processing methods to overcome the limitations of conventional methods.
Disclosure of Invention
Accordingly, the present invention is directed to a polishing method for removing the surface of an insulating wafer by discharging abrasive particles to solve the above-mentioned problems.
The invention adopts the following scheme:
the application provides a grinding and polishing processing method for removing the surface of an insulating wafer by abrasive particle discharge induction, which comprises the following steps:
s1: forming a discrete material by uniformly mixing soft abrasive particles, metal particles, and a binder;
s2: the method comprises the steps of obtaining a base material with porous characteristics, correspondingly paving the base material in a mould, uniformly pouring a dispersing material into the mould and completely immersing the base material, leveling by utilizing gravity, and correspondingly demoulding after a bonding agent is solidified to prepare a required grinding and polishing disc;
s3: controlling a pulse power supply to form an electric spark channel in a gap between surface metal particles of the polishing disc and an insulating wafer workpiece, wherein high temperature generated at the moment of discharge is used for forming a modified layer with lower hardness on the surface of the insulating wafer;
s4: the working solution added with the metal powder is used for assisting the grinding and polishing disc to grind the insulating wafer workpiece, the metal powder of the working solution is adsorbed on the surface of the workpiece by utilizing a magnetic field to form a metal layer, and then the metal layer and the modified layer are sequentially removed by soft abrasive particles under the high-speed scratching action, so that the insulating wafer without damage is obtained.
As a further improvement, in step S3,
the grinding and polishing head is electrically connected to the positive electrode of the pulse power supply, the rotating base is electrically connected to the negative electrode of the pulse power supply, a magnet piece is arranged on one side of the grinding and polishing head, the insulating wafer is placed on the other side of the grinding and polishing head, and the grinding and polishing disc is placed on the rotating base, so that the insulating wafer and the grinding and polishing disc are opposite to each other and are arranged in opposite directions.
As a further improvement, the magnet element is configured with a magnetic induction in the range of 50-1000mT.
As a further improvement, the voltage range of the pulse power supply is 25-120V, the pulse width is 0.2-100 mu s, and the pulse width is 0.2-100 mu s.
As a further improvement, in step S4,
grinding the insulating wafer workpiece for 10-40min by using the working liquid to assist the grinding and polishing disc, wherein the relative linear speed of the grinding and polishing disc and the insulating wafer workpiece is 0.5-5m/s, and the pressure between the grinding and polishing disc and the insulating wafer workpiece is 10-100kPa.
As a further improvement, the working solution is at least one of sodium chloride solution and potassium chloride solution; the metal powder in the working solution is at least one of copper, iron and aluminum, and the particle size of the metal powder is W0.5-W10.
As a further improvement, the insulating wafer is at least one of aluminum oxide and gallium oxide.
As a further improvement, the soft abrasive particles are at least one of silicon oxide, cerium oxide and aluminum oxide, and the particle size of the soft abrasive particles is W0.5-W10.
As a further improvement, the metal particles are at least one of copper, iron and aluminum, and the particle size of the metal particles is W0.5-W10; and the particle size of the metal particles is smaller than that of the soft abrasive particles, and the soft abrasive particles on the surface of the polishing disc protrude out of the metal particles.
As a further improvement, in step S1,
the dispersion is configured with 1-20% soft abrasive particles, 1-20% metal particles, and 60-98% binder.
By adopting the technical scheme, the invention can obtain the following technical effects:
according to the grinding and polishing processing method for removing the surface of the insulating wafer through the abrasive particle discharge induction, the prepared grinding and polishing disc with soft abrasive particles and metal particles is used for adsorbing metal powder in working solution to the surface of a workpiece to form a metal layer, then a pulse power supply is controlled to enable an electric spark discharge channel to be formed between the metal layer and the metal particles on the surface layer of the grinding and polishing disc, high temperature is generated through discharge to induce only the surface layer of the insulating wafer to melt and deteriorate without generating cracks, the soft abrasive particles are used for removing a deterioration layer, the processing efficiency of the large-size insulating wafer is remarkably improved, the surface of the insulating wafer is not damaged, ultra-precise processing of the insulating wafer is realized, particularly, the deterioration layer and the metal layer are formed on the surface of the workpiece, and the at least two layers are protected on the surface of the workpiece, so that the rapid removal operation and the effective wafer protection are achieved.
Drawings
FIG. 1 is a block flow diagram of a polishing method for removing an insulating wafer surface by discharge-induced abrasive particles according to an embodiment of the present invention;
FIG. 2 is a schematic view of a mold used in an embodiment of the present invention;
FIG. 3 is a cross-sectional view of FIG. 2 at other viewing angles;
FIG. 4 is a view showing a use scenario of the polishing method according to the embodiment of the present invention;
FIG. 5 is a schematic view of the polishing plate of FIG. 4;
FIG. 6 is a schematic process diagram of a polishing method according to an embodiment of the present invention;
FIG. 7 is a surface morphology of an alumina processed at 60V in a first embodiment of the present invention;
FIG. 8 is a surface morphology of an alumina processed at 125V according to a first embodiment of the present invention;
FIG. 9 is a graph showing the surface roughness measurement of an alumina polished at 60V voltage using a white light interferometer zygo 7300 according to the first embodiment of the present invention;
FIG. 10 is a graph showing the results of the detection of the surface composition of an alumina substrate after the polishing pad of the present invention;
FIG. 11 is a graph showing the surface roughness measurement of a polished gallium oxide at 60V voltage using a white light interferometer zygo 7300 according to a second embodiment of the present invention;
fig. 12 is a graph showing surface roughness measurement after silicon carbide abrasion in the comparative example of the present invention, in which white light interferometer zygo 7300 was used.
Icon:
1-soft abrasive particles; 2-metal particles; 3-a binding agent; 4-a substrate; 5-a mold; 6, grinding and polishing the disc; 7-insulating the wafer workpiece; 8-grinding and polishing heads; 9-rotating the base; 10-magnet piece.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention.
Examples
Referring to fig. 1 to 11, the present embodiment provides a polishing method for removing an insulating wafer surface by discharging abrasive grains, which includes the following steps:
s1: forming a bulk by uniformly mixing soft abrasive grains 1, metal particles 2, and a binder 3;
s2: the base material 4 with porous characteristics is obtained, the base material is correspondingly paved in a mould 5, then, the dispersion material is evenly poured into the mould 5 and completely submerges the base material 4, gravity is utilized for leveling, after the bonding agent 3 is solidified, the required grinding and polishing disc 6 is correspondingly prepared by demoulding;
s3: controlling a pulse power supply to form an electric spark channel in a gap between the surface metal particles 2 of the grinding and polishing disc 6 and the insulating wafer workpiece 7, wherein high temperature generated at the moment of discharge is used for forming a modified layer with lower hardness on the surface of the insulating wafer;
s4: the insulating wafer workpiece 7 is ground by the auxiliary grinding and polishing disc 6 through the working solution added with the metal powder, the metal powder of the working solution is adsorbed on the surface of the workpiece by utilizing a magnetic field to form a metal layer, and then the metal layer and the modified layer are sequentially removed by the soft abrasive particles 1 under the high-speed scratching action, so that the insulating wafer without damage is obtained.
In the above, by controlling the pulse power supply, an electric spark channel is formed between the surface metal particles 2 of the polishing disc 6 and the insulating wafer workpiece 7, high temperature is generated for oxidizing the surface of the insulating wafer, and a modified layer with lower hardness is formed, so that the subsequent polishing process is easier, and the surface damage to the insulating wafer is reduced. And through adding the working solution of metal powder, adsorb the metal powder on the work piece surface through the magnetic field effect, gradually get rid of metal layer and metamorphic layer by soft abrasive grain 1 under the high-speed scratch effect, realized more accurate effective control and harmless the getting rid of, guaranteed the integrality and the quality on insulating wafer surface, improved the reliability of preparation.
In this embodiment, by controlling the pulse power supply, an electric spark channel is formed in the gap between the surface metal particles 2 of the polishing plate 6 and the metal layer adsorbed on the insulating wafer workpiece 7, the high temperature generated in the instant of discharge only melts the insulating wafer to form a modified layer with lower hardness, and then the modified layer is removed by the soft abrasive particles 1 under the action of high-speed scratching, so as to realize the rapid removal of the oxidized surface layer of the insulating wafer.
Wherein, in step S3,
the polishing head 8 is electrically connected to the positive electrode of the pulse power supply, the rotating base 9 is electrically connected to the negative electrode of the pulse power supply, a magnet piece 10 is arranged on one side of the polishing head 8, an insulating wafer is placed on the other side of the polishing head 8, and the polishing disc 6 is placed on the rotating base 9, so that the insulating wafer and the polishing disc 6 are opposite to each other and are arranged in opposite directions, as shown in fig. 4, 5 and 6.
In particular, the magnet element 10 is configured to have a magnetic induction in the range of 50-1000mT.
Further, the voltage range of the pulse power supply is 25-120V, the pulse width is 0.2-100 mu s, and the pulse width is 0.2-100 mu s.
Wherein, in step S4,
the insulating wafer workpiece 7 is ground for 10-40min through the working liquid auxiliary grinding and polishing disc 6, the relative linear speed of the grinding and polishing disc 6 and the insulating wafer workpiece 7 is 0.5-5m/s, and the pressure between the grinding and polishing disc 6 and the insulating wafer workpiece 7 is 10-100kPa.
Preferably, the working solution is at least one of sodium chloride solution and potassium chloride solution; the metal powder in the working solution is at least one of copper, iron and aluminum, and the particle size of the metal powder is W0.5-W10.
Preferably, the insulating wafer is at least one of aluminum oxide and gallium oxide.
Preferably, the soft abrasive particles 1 are at least one of silicon oxide, cerium oxide, and aluminum oxide, and have a particle size of W0.5 to W10.
Preferably, the metal particles 2 are at least one of copper, iron and aluminum, and have a particle size of W0.5 to W10; and the particle size of the metal particles 2 is smaller than that of the soft abrasive particles 1, and the soft abrasive particles 1 on the surface of the grinding and polishing disc 6 protrude out of the metal particles 2.
Wherein, in step S1,
the dispersion is configured with 1-20% soft abrasive particles 1, 1-20% metal particles 2, and 60-98% binder 3. It should be noted that the hardness of the soft abrasive particles 1 is far lower than that of the metal particles 2, and the soft abrasive particles 1 can effectively protect the wafer surface during polishing and grinding operations.
The preferred mode of the first embodiment is further explained below.
Wherein, the W0.5 alumina abrasive particles, the W0.3 copper particles and the epoxy resin are sequentially placed in a beaker, and then are stirred for 2 hours by using a stirrer to be uniformly mixed so as to form a uniform dispersion material, wherein the mass percentages of the silica abrasive particles, the copper particles and the epoxy resin are 15%, 15% and 70% in sequence.
Placing a round foaming polyurethane substrate 4 with the diameter of 300mm and the thickness of 2mm into a die 5, uniformly pouring the dispersion into the die, completely immersing the porous polyurethane substrate 4, leveling by gravity, heating and curing the porous polyurethane substrate at 80 ℃ for 2 hours, and completely drying the belt to obtain the polishing disc 6.
A magnet piece 10 with magnetic induction intensity of 500mT is placed on a grinding and polishing head 8, a grinding and polishing disc 6 is installed on a machine table device, and aluminum oxide wafers with the diameter of 2 inches are ground and polished for 30min under the assistance of 0.6mol/L sodium chloride working solution added with W0.5 copper particles. The voltages of the pulse power supplies are respectively 20V, 25V, 60V, 120V and 125V, the pulse width is 20 mu s, and the pulse width is 20 mu s. The relative linear velocity of the polishing plate 6 and the wafer was 1m/s, and the pressure between the polishing plate 6 and the wafer was 50kPa.
The surface removing process of the processed workpiece comprises the following steps: firstly, after a pulse power supply is connected, copper particles and a metal layer adsorbed on a workpiece generate an electric spark discharge channel, high temperature is generated at the moment of discharge to induce aluminum oxide to melt to generate a modified layer, and then the metal layer and the modified layer are removed by a soft abrasive under the action of high-speed scratching, so that the purposes of rapidly removing materials and ensuring the surface quality are achieved, as shown in figure 6.
When the pulse power supply is 20V, the stable discharge process cannot be maintained due to the fact that the voltage is too small, and the aluminum oxide cannot be melted.
When the pulse power supply is 25V, the surface of the alumina has the phenomenon of melting deterioration. When the pulse power supply is 60V, the aluminum oxide surface is uniformly melted to generate a modified layer, and the surface quality is good after the modified layer is removed, as shown in figure 7.
When the pulse power supply is 120V, the surface of the aluminum oxide has a melting deterioration phenomenon, but the residual melting pit on the surface is larger. When the pulse power supply is 125V, the surface of the aluminum oxide has pits and cracks due to the overlarge voltage, as shown in fig. 8.
The material removal rate at a pulse voltage of 60V was 5.5 μm/h, the average surface roughness before processing was about 54nm, and the average surface roughness after polishing was about 0.64nm. The surface roughness after the processing is shown in fig. 9. Further, the detection of the surface components of the sample revealed the generation of a modified layer as shown in FIG. 10.
The preferred mode of the second embodiment is further explained below.
Wherein, the W0.5 cerium oxide abrasive particles, the W0.3 iron particles and the phenolic resin are sequentially placed in a beaker, and are uniformly mixed by using a stirrer for 15min to form uniform dispersion materials, wherein the mass percentages of the cerium oxide abrasive particles, the iron particles and the phenolic resin are 15%, 15% and 70% in sequence.
Placing a round foaming polyurethane substrate with the diameter of 300mm and the thickness of 2mm into a die, uniformly pouring the dispersion into the die, completely immersing the porous polyurethane substrate 4, leveling by gravity, heating and curing the porous polyurethane substrate at 80 ℃ for 2 hours, and completely drying the belt to obtain the polishing disc 6.
The magnet piece 10 with the magnetic induction intensity of 500mT is placed on the grinding and polishing head 8, the grinding and polishing disc 6 is installed on a machine table device, and the gallium oxide wafer with the diameter of 2 inches is polished for 30 minutes with the aid of 0.6mol/L sodium chloride working solution added with W0.5 iron particles, wherein the voltage of a pulse power supply is respectively 20V, 25V, 60V, 120V and 125V, the pulse width is 20 mu s, and the pulse width is 20 mu s. The relative linear velocity of the grinding and polishing disc 6 and the gallium oxide wafer is 1m/s, and the pressure between the grinding and polishing disc and the gallium oxide wafer is 60kPa.
The surface removing process of the processed workpiece comprises the following steps: firstly, after a pulse power supply is connected, the iron particles on the surface of the grinding and polishing disc 6 and a workpiece generate an electric spark discharge channel, high temperature is generated at the moment of discharge to induce gallium oxide to be melted to generate a modified layer, and then the modified layer is removed by a soft abrasive under the action of high-speed scratching, so that the purposes of rapidly removing materials and guaranteeing the surface quality are achieved.
When the pulse power supply is 20V, the stable discharge process cannot be maintained due to the fact that the voltage is too small, and gallium oxide cannot be melted. When the pulse power supply is 25V, the gallium oxide surface has the phenomenon of melting deterioration. When the pulse power supply is 60V, the gallium oxide surface is uniformly melted, and the surface quality is good after the metamorphic layer is removed. When the pulse power supply is 120V, the surface of gallium oxide has the phenomenon of melting deterioration, but the residual melting pit on the surface is larger. When the pulse power supply is 125V, the gallium oxide surface has melting pits and cracks due to the overlarge voltage. The material removal rate at a pulse voltage of 60V was 5.8 μm/h, the average surface roughness before processing was about 49nm, and the average surface roughness after polishing was about 0.79nm. The surface roughness after processing is significantly smaller than that after polishing of the preferred embodiment of the first example described above, as shown in fig. 11.
Comparative examples are provided below for reference.
Sequentially placing W0.5 alumina abrasive particles and epoxy resin into a beaker, and stirring for 2 hours by using a stirrer to uniformly mix so as to form uniform dispersion materials, wherein the mass percentages of the silica abrasive particles and the epoxy resin are 15% and 85% in sequence.
Placing a round foaming polyurethane substrate 4 with the diameter of 300mm and the thickness of 2mm into a die 5, uniformly pouring the dispersion into the die, completely immersing the porous polyurethane substrate 4, leveling by gravity, heating and curing the porous polyurethane substrate at 50 ℃ for 2 hours, and completely drying the belt to obtain the polishing disc 6.
The polishing disc 6 is arranged on a machine table device, and the alumina substrate with the diameter of 2 inches is polished for 30 minutes under the assistance of 0.6mol/L sodium chloride working solution, wherein the relative linear speed of the polishing disc 6 and the alumina substrate is 1m/s, and the pressure intensity between the polishing disc 6 and the alumina substrate is 50kPa.
The material removal rate of the comparative example was thus 0.12 μm/h, the average surface roughness before processing was about 52nm, and the average surface roughness after processing was about 7.2nm. The surface roughness after processing is shown in fig. 12, which is significantly greater than that after polishing in the preferred embodiment of the above two examples.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention.
Claims (10)
1. The polishing processing method for removing the surface of the insulating wafer by the discharge induction of abrasive particles is characterized by comprising the following steps of:
s1: forming a discrete material by uniformly mixing soft abrasive particles, metal particles, and a binder;
s2: the method comprises the steps of obtaining a base material with porous characteristics, correspondingly paving the base material in a mould, uniformly pouring a dispersing material into the mould and completely immersing the base material, leveling by utilizing gravity, and correspondingly demoulding after a bonding agent is solidified to prepare a required grinding and polishing disc;
s3: controlling a pulse power supply to form an electric spark channel in a gap between surface metal particles of the polishing disc and an insulating wafer workpiece, wherein high temperature generated at the moment of discharge is used for forming a modified layer with lower hardness on the surface of the insulating wafer;
s4: the working solution added with the metal powder is used for assisting the grinding and polishing disc to grind the insulating wafer workpiece, the metal powder of the working solution is adsorbed on the surface of the workpiece by utilizing a magnetic field to form a metal layer, and then the metal layer and the modified layer are sequentially removed by soft abrasive particles under the high-speed scratching action, so that the insulating wafer without damage is obtained.
2. The method of polishing a surface of an insulating wafer by discharge-induced removal of abrasive grains according to claim 1, wherein, in step S3,
the grinding and polishing head is electrically connected to the positive electrode of the pulse power supply, the rotating base is electrically connected to the negative electrode of the pulse power supply, a magnet piece is arranged on one side of the grinding and polishing head, the insulating wafer is placed on the other side of the grinding and polishing head, and the grinding and polishing disc is placed on the rotating base, so that the insulating wafer and the grinding and polishing disc are opposite to each other and are arranged in opposite directions.
3. The method of polishing an insulated wafer surface by discharging abrasive grains according to claim 2, wherein the magnet member is configured to have a magnetic induction ranging from 50 mT to 1000mT.
4. The method for polishing and removing the surface of the insulating wafer by the discharge induction of abrasive grains according to claim 2, wherein the voltage range of the pulse power supply is 25-120V, the pulse width is 0.2-100 μs, and the pulse width is 0.2-100 μs.
5. The method of polishing a surface of an insulating wafer by discharge-induced removal of abrasive grains according to claim 1, wherein, in step S4,
grinding the insulating wafer workpiece for 10-40min by using the working liquid to assist the grinding and polishing disc, wherein the relative linear speed of the grinding and polishing disc and the insulating wafer workpiece is 0.5-5m/s, and the pressure between the grinding and polishing disc and the insulating wafer workpiece is 10-100kPa.
6. The method for polishing and removing the surface of the insulating wafer by the discharge induction of abrasive particles according to claim 5, wherein the working fluid is at least one of a sodium chloride solution and a potassium chloride solution; the metal powder in the working solution is at least one of copper, iron and aluminum, and the particle size of the metal powder is W0.5-W10.
7. The method for polishing and removing the surface of an insulating wafer by discharging abrasive grains according to claim 1, wherein the insulating wafer is at least one of aluminum oxide and gallium oxide.
8. The polishing method for removing the surface of the insulating wafer by the discharge-induced removal of abrasive grains according to claim 1, wherein the soft abrasive grains are at least one of silicon oxide, cerium oxide and aluminum oxide, and have a particle size of W0.5 to W10.
9. The polishing method for removing the surface of the insulating wafer by the discharge induction of abrasive grains according to claim 8, wherein the metal particles are at least one of copper, iron and aluminum, and have a particle size of W0.5 to W10; and the particle size of the metal particles is smaller than that of the soft abrasive particles, and the soft abrasive particles on the surface of the polishing disc protrude out of the metal particles.
10. The method of polishing a surface of an insulating wafer by discharge-induced removal of abrasive grains according to claim 1, wherein, in step S1,
the dispersion is configured with 1-20% soft abrasive particles, 1-20% metal particles, and 60-98% binder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410244827.0A CN117817448B (en) | 2024-03-05 | 2024-03-05 | Grinding and polishing processing method for removing surface of insulating wafer by abrasive particle discharge induction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410244827.0A CN117817448B (en) | 2024-03-05 | 2024-03-05 | Grinding and polishing processing method for removing surface of insulating wafer by abrasive particle discharge induction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117817448A true CN117817448A (en) | 2024-04-05 |
| CN117817448B CN117817448B (en) | 2024-05-07 |
Family
ID=90517613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410244827.0A Active CN117817448B (en) | 2024-03-05 | 2024-03-05 | Grinding and polishing processing method for removing surface of insulating wafer by abrasive particle discharge induction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117817448B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0938948A1 (en) * | 1998-02-26 | 1999-09-01 | The Institute Of Physical & Chemical Research | Method and apparatus for profile mirror surface grinding |
| JPH11320356A (en) * | 1998-05-06 | 1999-11-24 | Shin Etsu Handotai Co Ltd | Method and device for grinding surface of sheet work |
| JP2000286298A (en) * | 1999-01-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | Method for mounting electronic component and device thereof |
| US20080268752A1 (en) * | 2007-04-27 | 2008-10-30 | Disco Corporation | Substrate grinding method and device |
| KR20080102608A (en) * | 2007-05-21 | 2008-11-26 | 아사히 다이아몬드코교 가부시끼가이샤 | Cup-typed grinder for the back surface of semiconductor wafer, and grinding method |
| CN109746533A (en) * | 2017-11-06 | 2019-05-14 | 南京航空航天大学 | Multi-channel discharge is atomized ablation and is ground combined machining method |
| CN212527198U (en) * | 2020-06-01 | 2021-02-12 | 江苏江航智飞机发动机部件研究院有限公司 | Electric spark machining workpiece surface deterioration layer grinding device |
| CN113103076A (en) * | 2021-04-13 | 2021-07-13 | 霖鼎光学(上海)有限公司 | Wafer polishing device based on inductively coupled plasma |
-
2024
- 2024-03-05 CN CN202410244827.0A patent/CN117817448B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0938948A1 (en) * | 1998-02-26 | 1999-09-01 | The Institute Of Physical & Chemical Research | Method and apparatus for profile mirror surface grinding |
| JPH11320356A (en) * | 1998-05-06 | 1999-11-24 | Shin Etsu Handotai Co Ltd | Method and device for grinding surface of sheet work |
| JP2000286298A (en) * | 1999-01-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | Method for mounting electronic component and device thereof |
| US20080268752A1 (en) * | 2007-04-27 | 2008-10-30 | Disco Corporation | Substrate grinding method and device |
| KR20080102608A (en) * | 2007-05-21 | 2008-11-26 | 아사히 다이아몬드코교 가부시끼가이샤 | Cup-typed grinder for the back surface of semiconductor wafer, and grinding method |
| CN109746533A (en) * | 2017-11-06 | 2019-05-14 | 南京航空航天大学 | Multi-channel discharge is atomized ablation and is ground combined machining method |
| CN212527198U (en) * | 2020-06-01 | 2021-02-12 | 江苏江航智飞机发动机部件研究院有限公司 | Electric spark machining workpiece surface deterioration layer grinding device |
| CN113103076A (en) * | 2021-04-13 | 2021-07-13 | 霖鼎光学(上海)有限公司 | Wafer polishing device based on inductively coupled plasma |
Non-Patent Citations (1)
| Title |
|---|
| 罗求发等: "单层磨料凝胶抛光垫的加工性能研究", 表面技术, vol. 50, no. 12, 31 December 2021 (2021-12-31) * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117817448B (en) | 2024-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5455282B2 (en) | Silicon-on-insulator transfer wafer edge removal | |
| KR100222228B1 (en) | Regeneration method and apparatus of wafer and substrate | |
| US6429133B1 (en) | Composition compatible with aluminum planarization and methods therefore | |
| JP5412397B2 (en) | Method for grinding a semiconductor wafer | |
| KR20000022567A (en) | Method for cutting rare earth alloy, method for manufacturing rare earth alloy plates and method for manufacturing rare earth alloy magnets using wire saw, and voice coil motor | |
| US20140187043A1 (en) | Polishing agent and polishing method | |
| KR20040093725A (en) | Method and composition for polishing a substrate | |
| WO2003043780A2 (en) | Method for polishing a substrate surface | |
| US6489243B2 (en) | Method for polishing semiconductor device | |
| CN117817448B (en) | Grinding and polishing processing method for removing surface of insulating wafer by abrasive particle discharge induction | |
| JP4852806B2 (en) | Chamfering method and apparatus for rare earth magnet | |
| Tani et al. | Infeed grinding of silicon wafers applying electrophoretic deposition of ultrafine abrasives | |
| KR101086966B1 (en) | Grinding Process of Semiconductor Wafer | |
| CN117840824B (en) | Grinding method for semiconductor wafer surface | |
| TW544363B (en) | Metal-less bond grindstone, electrolytic dressing grinding method and device using same | |
| US20050121969A1 (en) | Lubricant for wafer polishing using a fixed abrasive pad | |
| CN117961656A (en) | Polishing method for removing surface of semiconductor wafer based on abrasive particle discharge induction | |
| JP2014083678A (en) | Electrophoretic cutting system and manufacturing method of electrophoretic cutting carrier | |
| CN106711032A (en) | High-efficiency and low-damage grinding method suitable for hard-brittle and easy-cleavage single crystal gallium oxide wafer | |
| JP4013240B2 (en) | Processing method for work made of brittle materials | |
| JP3678993B2 (en) | Dresser for CMP processing | |
| JP4283088B2 (en) | Workpiece surface processing method | |
| JP2001129764A (en) | Tool for machining silicon and its manufacturing method, and machining method using the tool | |
| TW455525B (en) | Method for improving chemical mechanical polishing of tungsten metal layer | |
| JPH06302568A (en) | Mirror polishing apparatus with fixed abrasive |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |