CN117811308A - Power converter and diode module - Google Patents

Abstract

The application provides a diode module and power converter, this power converter includes the circuit board and sets up the DC/DC circuit on the circuit board, and DC/DC circuit includes at least one diode module, and this diode module includes: the device comprises a shell, a pin group, at least two wafers and a substrate, wherein the at least two wafers and the substrate are packaged in the shell, the pin group is fixedly connected with the shell, and the at least two wafers are tiled on one surface of the substrate and are electrically connected with the substrate; the at least two wafers comprise a first wafer and a second wafer, and the first wafer is electrically connected with the second wafer; the pin group comprises at least two anode pins and a cathode pin, wherein the at least two anode pins comprise a first pin and a second pin, the first pin is electrically connected with the first wafer, the second pin is electrically connected with the second wafer, and the cathode pin is electrically connected with the substrate. Through making two wafers electric connection in the inside of diode module, can promote the through-flow ability of device, can also effectively restrain resonance phenomenon.

Description

Power converter and diode module

Technical Field

The present application relates to the field of circuits, and more particularly, to a power converter and diode module.

Background

In the photovoltaic power generation system, a buck chopper (buck) circuit (or a buck circuit) is integrated in a photovoltaic optimizer, a boost chopper (boost) circuit (or a boost circuit) is integrated in a photovoltaic inverter, and the boost circuit can convert a wide-range direct-current voltage output by a photovoltaic module into a stable direct-current voltage so as to meet the requirement of an inverter circuit of a later stage.

The two anode inputs of the common cathode diode in these circuits (such as boost circuit, buck step-down circuit, etc.) may be different in the circuit on the printed circuit board (printed circuit board, PCB) board, which may cause inconsistent parasitic parameters, resulting in resonance noise with the devices on the existing circuit, and seriously affecting the electromagnetic compatibility (electromagnetic magnetic compatibility, EMC) test results of the device.

Disclosure of Invention

The application provides a power converter and a diode module, which can effectively inhibit resonance phenomenon.

In a first aspect, a power converter is provided that includes a circuit board and a DC/DC circuit disposed on the circuit board, the DC/DC circuit including at least one diode module, the diode module comprising: the device comprises a shell, a pin group, at least two wafers and a substrate, wherein the at least two wafers and the substrate are packaged in the shell, the pin group is fixedly connected with the shell, and the at least two wafers are tiled on one surface of the substrate and are electrically connected with the substrate; the at least two wafers comprise a first wafer and a second wafer, and the first wafer is electrically connected with the second wafer; the pin group comprises at least two anode pins and a cathode pin, wherein the at least two anode pins comprise a first pin and a second pin, the first pin is electrically connected with the first wafer, the second pin is electrically connected with the second wafer, and the cathode pin is electrically connected with the substrate.

The DC/DC circuit that the power converter that this application provided includes can include one or more diode module to be located two wafers inside the diode module and can be electrically connected, make two positive pole pins at the inside short circuit of diode module, thereby can avoid outside to walk the parasitic parameter difference that the line difference leads to, can effectively solve the unusual problem that the diode module is applied to in various photovoltaic circuits because of its own parasitic parameter leads to, in addition, can also increase the through-flow capacity of single diode module.

With reference to the first aspect, in some implementations of the first aspect, the DC/DC circuit includes a boost circuit, the boost circuit further includes an active switching device, an inductor, a capacitor, and a resistor, an anode pin of the diode module is electrically connected to the active switching device and the inductor, and a cathode pin of the diode module is electrically connected to the capacitor and the resistor.

It can be understood that the DC/DC circuit may be a boost circuit, and the DC/DC circuit includes an active switching device, an inductor, a capacitor, a resistor, and a diode module, where an internal wafer of the diode module may be shorted, so that parasitic parameters caused by an external wiring difference are avoided, thereby effectively suppressing a resonance phenomenon, and improving a current capacity of a single device.

With reference to the first aspect, in some implementations of the first aspect, the DC/DC circuit includes a buck step-down circuit, and the buck step-down circuit further includes an active switching device, an inductor, a capacitor, and a resistor, and an anode pin of the diode module is electrically connected to the capacitor and the resistor, and a cathode pin of the diode module is electrically connected to the active switching device and the inductor.

It can be understood that the DC/DC circuit may be a buck step-down circuit, and the DC/DC circuit includes an active switching device, an inductor, a capacitor, a resistor and a diode module, where an internal wafer of the diode module may be shorted, so that parasitic parameters caused by an external wiring difference are avoided, thereby effectively suppressing a resonance phenomenon, and improving a current capacity of a single device.

With reference to the first aspect, in some implementations of the first aspect, the DC/DC circuit includes a DC auxiliary source circuit, the DC auxiliary source circuit further includes a transformer, a DC bus, and a load, an anode pin of the diode module located on a primary side of the transformer is electrically connected to a main winding of the transformer, and a cathode pin of the diode module located on the primary side of the transformer is electrically connected to the DC bus; the anode pin of the diode module positioned on the secondary side of the transformer is electrically connected with the secondary winding of the transformer, and the cathode pin of the diode module positioned on the secondary side of the transformer is electrically connected with the load.

It can be understood that the DC/DC circuit may be other transformer circuits, and the DC/DC circuit includes a transformer, a DC bus, a load (such as a capacitor, a resistor, etc.) and a diode module, where an internal wafer of the diode module may be shorted, so that parasitic parameters caused by an external wiring difference are avoided, thereby effectively suppressing a resonance phenomenon, and improving a current capacity of a single device.

With reference to the first aspect, in certain implementations of the first aspect, the first wafer and the second wafer may be electrically connected by a wire, where the wire may be a metal wire having a wire diameter of 15-50 microns.

With reference to the first aspect, in certain implementations of the first aspect, the diode module is a wide bandgap semiconductor device or a silicon-based semiconductor device.

With reference to the first aspect, in certain implementations of the first aspect, the wide bandgap semiconductor device is a silicon carbide semiconductor device, or the wide bandgap semiconductor device is a gallium nitride semiconductor device.

With reference TO the first aspect, in certain implementations of the first aspect, the diode module employs a TO-247 series package, or a TO-220 series package, or a TO-263 series package, or a TO-252 series package.

In a second aspect, there is provided a diode module comprising: the device comprises a shell, a pin group, at least two wafers and a substrate, wherein the at least two wafers and the substrate are packaged in the shell, the pin group is fixedly connected with the shell, and the at least two wafers are tiled on one surface of the substrate and are electrically connected with the substrate; the at least two wafers comprise a first wafer and a second wafer, and the first wafer is electrically connected with the second wafer; the pin group comprises at least two anode pins and a cathode pin, wherein the at least two anode pins comprise a first pin and a second pin, the first pin is electrically connected with the first wafer, the second pin is electrically connected with the second wafer, and the cathode pin is electrically connected with the substrate.

The substrate may be a copper-clad ceramic substrate DBC, an active metal bonding substrate AMB, an insulating metal substrate IMS, or the like, which is not limited in this application.

In this application implementation mode, be located the inside two wafer electricity of diode module and connect for two positive pole pins are at the internal short circuit of diode module, thereby can avoid outside to walk the parasitic parameter difference that the difference leads to, can effectively solve the unusual problem that the diode module is applied to in various photovoltaic circuits because of its parasitic parameter leads to, in addition, can also increase the through-flow capacity of single diode module.

With reference to the second aspect, in some implementations of the second aspect, the first wafer and the second wafer may be electrically connected by a wire, where the wire may be a metal wire having a wire diameter of 15-50 microns.

In this application implementation mode, can connect two wafers through the wire in the inside of diode module, avoided outside to walk the parasitic parameter difference that the difference leads to, can effectively solve the unusual problem that the diode module is applied to in various photovoltaic circuits because of its parasitic parameter leads to, in addition, can also increase the through-flow capacity of single diode module.

With reference to the second aspect, in some implementations of the second aspect, the diode module is a wide bandgap semiconductor device or a silicon-based semiconductor device.

With reference to the second aspect, in certain implementations of the second aspect, the wide bandgap semiconductor device is a silicon carbide semiconductor device or the wide bandgap semiconductor device is a gallium nitride semiconductor device.

With reference TO the second aspect, in some implementations of the second aspect, the diode module employs a TO-247 series package, or a TO-220 series package, or a TO-263 series package, or a TO-252 series package.

Drawings

Fig. 1 is a schematic diagram of a light storage system according to an embodiment of the present application.

Fig. 2 is a schematic diagram of a boost circuit according to an embodiment of the present application.

Fig. 3 is a schematic diagram of another boost circuit according to an embodiment of the present application.

Fig. 4 is a schematic structural diagram of a power converter according to an embodiment of the present application.

Fig. 5 is a schematic structural diagram of a diode module according to an embodiment of the present application.

Fig. 6 is a topology diagram of a circuit employing a diode module according to an embodiment of the present application.

Fig. 7 is a schematic diagram of another circuit topology using diode modules according to an embodiment of the present application.

Fig. 8 is a schematic diagram of another circuit topology using diode modules according to an embodiment of the present application.

Detailed Description

The technical solutions in the present application will be described below with reference to the accompanying drawings.

In the description of the embodiment of the present application, prefix words such as "first" and "second" are used merely to distinguish different description objects, and there is no limitation on the position, order, priority, number, content, or the like of the described objects. The use of ordinal words and the like in the embodiments of the present application to distinguish between the prefix words describing the object does not impose limitations on the described object, and statements of the described object are to be read in light of the claims or the description of the context of the embodiments and should not be construed as unnecessary limitations due to the use of such prefix words. In addition, in the description of the present embodiment, unless otherwise specified, the meaning of "a plurality" is two or more.

Reference in the specification to "in some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in some embodiments" or the like in various places throughout this specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.

In the embodiments of the present application, the same reference numerals denote the same components or the same parts. In the embodiment of the present application, for a plurality of identical components, reference numerals may be given to only one of the components in the drawings. The same reference numerals are used for other identical parts or components.

Referring to fig. 1, fig. 1 is a schematic networking diagram of the optical storage system 100 in an ac coupling scenario, in which the photovoltaic module 110 converts solar energy into dc power through a photovoltaic effect, and the inverter 120 converts the dc power output by the photovoltaic module 110 into ac power and further transmits the ac power to the box-type substation 130. The box-type substation 130 converts the low-voltage ac power output by the inverter 120 into medium-voltage ac power, and then further transmits the ac power to the booster station 140 (the power grid 150) or the box-type substation 180 corresponding to the energy storage system 160. The energy storage system 160 is used to store the unstable electric energy from the photovoltaic module 110 and output the stable electric energy to the power grid 150 via the energy storage converter 170 and the corresponding box transformer substation 180. In the context of DC coupling of the light storage system 100, the present application does not provide a corresponding figure, wherein the photovoltaic module 110 and the energy storage system 160 transmit DC power to a DC/AC power converter (DC/AC power converter) via a DC/DC power converter (DC/DC power converter), which converts the DC power to AC power and then further transmits the AC power to the box-type substation 130/180 or the grid 150. Meanwhile, the photovoltaic module 110 may also transmit direct current to the energy storage system 160 through a DC/DC power converter.

In one embodiment, a photovoltaic optimizer (not shown) is also connected between the photovoltaic module 110 and the inverter 120. The photovoltaic optimizer may also be referred to as a photovoltaic power optimizer, which may increase the power generation of the photovoltaic system 100 by continuously tracking the maximum power point of each photovoltaic module 110, and may also have functions of module-level shutdown, module-level monitoring, and the like.

In the photovoltaic system 100, a buck step-down circuit is integrated in the photovoltaic optimizer, and a boost step-up circuit is integrated in the inverter 120, which can convert a wide range of DC voltage output by the photovoltaic module 110 into a stable DC voltage to satisfy the inverter circuit (DC/AC circuit) of the subsequent stage.

The buck step-down circuit in the photovoltaic optimizer, the boost step-up circuit in the inverter 120, or other voltage transformation circuit all require the application of diode modules (e.g., common cathode diodes). The common cathode diode (common cathode diode) has two PN junctions, but the cathodes (cathodes) of the two PN junctions are common and are therefore referred to as common cathodes. The common cathode diode operates on a principle similar to a conventional diode (or called a common anode diode), but has two independent anodes (anodes). When current flows through the common cathode diode, the positive voltage causes one of the PN junctions to become forward biased and the other PN junction to become reverse biased. This results in a different voltage gradient between the two PN junctions of the diode. Common cathode diodes are commonly used in applications in circuits where rectification or selective amplification of two different signals is required. By connecting an external circuit to two separate anodes, the operation of the common cathode diode can be controlled so that it can process the two signals separately.

The two anode pins of the diode module (such as a common cathode diode) in the circuits (such as a boost circuit, a buck circuit and the like) may be input into the circuit on the PCB board with different parameters, which may cause inconsistent parasitic parameters, cause resonance noise with devices on the existing circuit, and seriously affect EMC test results of the device. Specifically, two anode pins of the diode module (such as a common cathode diode) are relatively independent, wiring uniformity can be achieved as much as possible in the diode module, parasitic parameters are smaller, but when the external wiring of the diode module is performed, the two anode pins are far away from each other, wiring difference is necessarily caused when the two anode pins are connected with the same target position on a PCB, parasitic parameters are different, resonance noise is caused by devices on the existing circuit, and EMC test results of the diode module are seriously affected.

In the use process of a diode module (such as a common cathode diode), resonant noise caused by inconsistent anode input lines is currently generated by adjusting parameters on a line between two anode inputs of the common cathode diode and by applying a suitable capacitor C2, so as to avoid a resonant point, and fig. 2 can be specifically referred to.

Referring to fig. 2, the boost circuit may include: the active switching device T, the inductor L, the diode module D, the capacitor C1 and the capacitor C2. The active switching device T may be an insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT) or a metal-oxide semiconductor field-effect transistor (MOSFET) transistor, and may be used for performing a switching operation. In order to solve the resonance noise caused by the inconsistency of the anode input wires, a capacitor C2 is generally added outside the diode module D, and the capacitor C2 is electrically connected between two anode pins of the diode module D.

However, the method of adding the capacitor C2 needs to be adjusted according to the application of the actual circuit and the difference of the routing, and like the inverter 120, the difference of various operation conditions in actual operation is large, and parameters in the application circuit of the diode module D (such as a common cathode diode) change along with different operation states, so that the resonance point changes, and the originally designed capacitor parameters may not be capable of effectively inhibiting the resonance problem.

In order to avoid the problems, the internal structure of the diode module can be improved, so that resonance phenomenon can be effectively restrained, and the current passing capability of a single device can be improved.

Referring to fig. 3, fig. 3 is a schematic diagram of a boost circuit according to an embodiment of the present application. The boost circuit may include: the active switching device T, the inductance L, the diode module D and the capacitor C, the anode pin of the diode module D is electrically connected with the active switching device T and the inductance L, and the cathode pin of the diode module D is electrically connected with the capacitor C and the resistor R. Wherein, in diode module D's inside, can be connected through the wire electricity between its two independent anodes for diode module D's two anodes carry out the short circuit in its inside, thereby make two independent anodes when connecting same target position on PCB, can not cause the wiring difference, can not cause resonance noise, and then can not cause the influence to diode module D's EMC test result, in addition, can also promote diode module D's through-flow capacity.

Referring to fig. 4, fig. 4 is a schematic structural diagram of a power converter provided in the present application. It should be understood that the power converter 20 shown in fig. 4 is merely an example, and that many more devices or units may be included in the power converter 20, and that the locations of the devices or units in the power converter 20 shown in fig. 4 are merely examples and not limiting.

It should be noted that, the power converter 20 provided in the embodiment of the present application may be the inverter 120, the energy storage converter 170, or the photovoltaic optimizer, which is not limited in this application.

The power converter 20 includes a housing 21, a circuit board 22, and a DC/DC circuit 23 disposed on the circuit board 22, the DC/DC circuit 23 including at least one diode module 200, and a specific structure of the diode module 200 will be described in detail with reference to fig. 5.

In some embodiments, the circuit board 22 may further include a first device 300 and a second device 400 thereon, and each of the first device 300 and the second device 400 may be connected to the diode module 200 through metal wires.

In some embodiments, power converter 20 may also include a cover plate, which is not shown in fig. 4. The housing 21 and the cover plate enclose a housing chamber in which the circuit board 22 is disposed.

The circuit board 22 may be a printed circuit board that is a support for the electronic components and also serves as a carrier for the electrical connections of the electronic components. The printed circuit board has a function of supporting the circuit elements and interconnecting the circuit elements. Including but not limited to capacitors, inductors, resistors, processors, memory, antennas, etc. In general, a printed circuit board without soldered electronic components may be referred to as a PCB veneer. The printed circuit board to which the electronic components are soldered may be referred to as a printed circuit board assembly (printed circuit board assembly, PCBA).

The printed circuit board is provided with conductive patterns, and the electronic components can be electrically connected by wiring between different conductive patterns. The printed circuit board may employ FR-4 dielectric boards, rogers dielectric boards, hybrid dielectric boards of rogers and FR-4, and the like. Here, FR-4 is a code of a flame resistant material grade, and rogers dielectric board is a high frequency board. The printed circuit board may be a single panel, a double panel, a multi-layer wiring board, or the like. The printed circuit board may be a ceramic circuit board, an alumina ceramic circuit board, an aluminum nitride ceramic circuit board, an aluminum substrate, a high frequency board, a thick copper plate, an impedance board, or the like.

It should be appreciated that the DC/DC circuit 23 may be disposed on the circuit board 22, the DC/DC circuit 23 including at least one diode module 200. The DC/DC circuit 23 may include a boost circuit, a buck circuit, a DC auxiliary circuit, and the like, and may also include other forms of voltage transformation circuits, which are not limited in this application.

In one example, the DC/DC circuit 23 may be a boost circuit including an active switching device, an inductor, a capacitor, a resistor, and a diode module 200, where an anode pin of the diode module 200 is electrically connected to the active switching device and the inductor, and a cathode pin of the diode module 200 is electrically connected to the capacitor and the resistor. Illustratively, the first device 300 may be a capacitor and the second device 400 may be an active switching device.

In another example, the DC/DC circuit 23 may include a buck step-down circuit including an active switching device, an inductor, a capacitor, a resistor, and a diode module 200, an anode pin of the diode module 200 being electrically connected to the capacitor and the resistor, and a cathode pin of the diode module 200 being electrically connected to the active switching device and the inductor. Illustratively, the first device 300 may be an active switching device and the second device 400 may be a capacitor.

In yet another example, the DC/DC circuit 12 may include a DC auxiliary source circuit including a transformer, a DC bus, a load (e.g., capacitor, resistor) and a diode module 200, an anode pin of the diode module 200 located on a primary side of the transformer being electrically connected to a main winding of the transformer, and a cathode pin of the diode module 200 located on the primary side of the transformer being electrically connected to the DC bus; the anode pin of the diode module 200 located at the secondary side of the transformer is electrically connected with the secondary winding of the transformer, and the cathode pin of the diode module 200 located at the secondary side of the transformer is electrically connected with the load. Illustratively, the first device 300 may be a dc bus and the second device 400 may be a transformer.

The structure of the diode module 200 in the embodiment of the present application is described in detail below with reference to fig. 5. It should be understood that the diode module 200 shown in fig. 5 is only an example, and that many more devices or units may be included in the diode module 200, and that the locations of the devices or units in the diode module 200 shown in fig. 5 are only examples and not limiting.

Referring to fig. 5, fig. 5 is a schematic structural diagram of a diode module 200 according to an embodiment of the present application, where the diode module 200 includes a housing 210, a pin set 220, at least two wafers 230, and a substrate 260, the at least two wafers 230 and the substrate 260 are encapsulated inside the housing 210, and the pin set 220 is fixedly connected with the housing 210. At least two wafers 230 (including a first wafer 231 and a second wafer 232) are tiled on one side of the substrate 260 and electrically connected to the substrate 260. The substrate 260 may be a copper-clad ceramic substrate (direct bond copper, DBC), an active metal solder substrate (active metal brazed copper, AMB), an insulating metal substrate (insulated metal substrate, IMS), or the like, which is not limited in this application.

The material of the housing 210 may be metal, plastic, glass, ceramic, or the like, or may be other materials, which is not limited in this embodiment. At least two wafers 230 and substrates 260 may be encapsulated inside the housing 210, which can reduce the influence of mechanical stress, chemical contamination, light source irradiation, etc. on the wafers 230 and substrates 260. It should be appreciated that the wafer 230 package may be a TO-247 series package, or a TO-220 series package, or a TO-263 series package, or a TO-252 series package, etc., as not limited in this application.

The lead group 220 includes at least two anode leads (a-type leads) and one cathode lead 223 (K-type leads), the at least two anode leads including a first lead 221 and a second lead 222, the first lead 221 being electrically connected to the first wafer 231, the second lead 222 being electrically connected to the second wafer 232, the cathode lead 223 being electrically connected to the substrate 260.

It should be appreciated that the cathode pins of the diode module 200 are common, and thus, the diode module 200 has two anode (positive) pins and one cathode (negative) pin. The cathode of the diode module 200 may be connected to the cathode of the circuit through a common pin (e.g., the third pin 223) or wire.

It should also be appreciated that the anode pin of the diode module 200 may be electrically connected to the wafer by a wire, or may be electrically connected by other means, which is not limited in this application. In one embodiment, the diode module 200 further includes a first wire 240, the first wire 240 being connected between the anode pin and the wafer 230. The first conductive wire 240 may be a bonding wire, for example, a metal wire having a wire diameter of 15-50 micrometers.

Illustratively, the first wire 240 may include a first sub-wire 241 and a second sub-wire 242, the first sub-wire 241 being connected between the first pin 221 and the first wafer 231 to enable electrical connection of the first pin 221 with the first wafer 231; the second sub-wires 242 are connected between the second pins 222 and the second wafer 232 to electrically connect the second pins 222 and the second wafer 232.

In the actual current transmission process, the current flows from the positive electrode of the power supply to two independent anodes of the diode module 200; and then flows to two separate wafers, each of which can be individually controlled; and then flows to the substrate 260, and the substrate 260 is electrically connected to the cathode pin 223, thereby flowing to the cathode pin 223; and finally to the negative supply through the common cathode pin 223. Illustratively, current can flow from the power supply anode to the first pin 221 and the second pin 222, through the two anode pins (including the first pin 221 and the second pin 222) to the inside of the diode module 200, and through the first pin 221 and the first sub-wire 241 to the first wafer 231, through the second pin 222 and the second sub-wire 242 to the second wafer 232, then to the substrate 260, then to the outside of the diode module 200 through the common cathode pin (i.e., the third pin 223), and finally to the power supply cathode.

The at least two wafers 230 include a first wafer 231 and a second wafer 232, the first wafer 231 being electrically connected to the second wafer 232.

It should be understood that the first wafer 231 and the second wafer 232 may be electrically connected by wires, or may be electrically connected by other means, which is not limited in this application. In one embodiment, the diode module 200 further includes a second wire 250, and the first wafer 231 and the second wafer 232 may be electrically connected by the second wire 250, and the second wire 250 may be a bonding wire, for example, a metal wire having a wire diameter of 15-50 micrometers.

In the diode module 200 provided by the application, a plurality of wafers inside the diode module 200 can be electrically connected, for example, the first wafer 231 and the second wafer 232 are electrically connected through the second wire 250, so that the first pin 221 and the second pin 222 are in short circuit, different parasitic parameters caused by external wiring difference are avoided, the problem that the diode module 200 is applied to various photovoltaic circuits and is abnormal due to parasitic parameters of the diode module 200 can be effectively solved, and in addition, the current passing capacity of the single diode module 200 can be increased.

In some embodiments, the first wafer 231 may be formed from a plurality of wafer stacks, and the second wafer 232 may also be formed from a plurality of wafer stacks. In the actual processing process, one or more through holes can be formed in each wafer, the wafers can be connected through solder (such as tin) and can be filled with the one or more through holes after being cooled, so that the plurality of wafers can be stacked and arranged.

In some embodiments, the anodes of the multiple wafers packaged inside the diode module 200 may be shorted by a bonding wire. Illustratively, the at least two wafers 230 may include other wafers, such as a third wafer (not shown), in addition to the first wafer 231 and the second wafer 232. The first wafer 231, the second wafer 232, and the third wafer are tiled on one side of the substrate 260, in which case the second wire 250 may include a third sub-wire (not shown) connected between the first wafer 231 and the third wafer and a fourth sub-wire (not shown) connected between the third wafer and the second wafer 232.

It should be appreciated that the diode module 200 provided in the embodiments of the present application may be applied to various circuits in the optical storage system 100, which may be converters or part of the circuits that form the converter system. The converter may be a boost converter or a buck converter, or may be another converter using a diode module, which is not limited in this embodiment of the present application.

Note that, the boost converter in the embodiment of the present application may also be referred to as a boost circuit, the boost converter may also be referred to as a boost circuit, the buck converter may also be referred to as a buck circuit, and the buck converter may also be referred to as a buck circuit.

In addition, the diode module 200 provided in the embodiment of the present application may also be in other circuit structures, such as a vehicle-mounted system and related circuits involving voltage transformation in a terminal device, which is not limited in this application.

The specific structure of the diode module 200 provided in the embodiment of the present application is described in detail above with reference to fig. 5. The application of the diode module 200 provided in the present application in a boost circuit, a buck circuit and a dc auxiliary circuit is described below with reference to fig. 6 to 8.

Fig. 6 is a topology diagram of a boost circuit according to an embodiment of the present application. It should be appreciated that the inverter 120 needs to ensure that the output voltage has a magnitude greater than or equal to the maximum value of the grid voltage before being connected to the grid 150, and that the voltage provided by the photovoltaic module 110 may not meet the requirement, and a boost circuit may be used to boost the voltage.

Referring to fig. 6, the boost circuit may include: a power supply V, an inductance L, an active switching device T, a diode device D, a capacitance C and a resistance R. The diode device D may be the diode module 200 shown in fig. 5. It should be appreciated that in this topology, diode device D may be packaged as one device.

In the boost circuit, a cathode pin of the diode module 200 is electrically connected to a load (including a capacitor C and a resistor R), and an anode pin of the diode module 200 is electrically connected to the active switching device T and the inductor L.

The diode device D may integrate multiple dies inside to enhance the current carrying capability of a single device. In addition, if the diode device D is a multi-pin package, the parasitic parameters caused by the PCB routing difference due to the plurality of pins can be solved, and thus the resonance problem is caused.

Fig. 7 is a topology diagram of a buck step-down circuit according to an embodiment of the present application. It should be appreciated that the buck step-down circuit inside the photovoltaic optimizer may function as follows: finding the highest power point of the photovoltaic module 110; the voltage of the photovoltaic module 110 is turned off, so that safety is ensured; the photovoltaic module 110-level monitoring is realized.

Referring to fig. 7, the buck step-down circuit may include: a power supply V, an active switching device T, a diode device D, an inductance L, a capacitance C and a resistance R. The diode device D may be the diode module 200 shown in fig. 5. It should be appreciated that in this topology, diode device D may be packaged as one device.

In the buck circuit, the cathode pin of the diode module 200 is electrically connected to the active switching device T and the inductor L, and the anode pin of the diode module 200 is electrically connected to a load (including the capacitor C and the resistor R).

The diode device D may integrate multiple dies inside to enhance the current carrying capability of a single device. In addition, if the diode device D is a multi-pin package, the parasitic parameters caused by the PCB routing difference due to the plurality of pins can be solved, and thus the resonance problem is caused.

Fig. 8 is a topology diagram of a dc auxiliary source circuit according to an embodiment of the present application. It should be appreciated that the inverter 120 in the optical storage system 100 requires an auxiliary source to power each device, and the dc auxiliary source is to convert the high voltage of the dc bus to the low voltage level required by other circuits and devices through the control of the switching circuit in combination with the transformer and the diode.

Referring to fig. 8, the dc auxiliary source circuit may include a dc bus, a switching circuit, a transformer, resistors R1-R4, a capacitor C3, a capacitor C4, and diode devices D1-D9. The diode modules 200 shown in fig. 5 can be used for the diode devices D1-D4, D7, and D8, so that the current-through capability can be improved and the resonance problem possibly caused by the single multi-pin device can be suppressed.

In the DC auxiliary source circuit, an anode pin of the diode module 200 (comprising D1-D4) positioned on the primary side of the transformer is electrically connected with a main winding of the transformer, and a cathode pin of the diode module 200 (comprising D1-D4) positioned on the primary side of the transformer is electrically connected with a DC bus; the anode pins of the diode modules 200 (including D7 and D8) on the secondary side of the transformer are electrically connected with the secondary winding of the transformer, and the cathode pins of the diode modules 200 (including D7 and D8) on the secondary side of the transformer are electrically connected with the load (including resistor, capacitor, etc.).

The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (11)

1. A power converter is characterized in that the power converter comprises a circuit board and a DC/DC circuit arranged on the circuit board, the DC/DC circuit comprises at least one diode module,

wherein, the diode module includes: the device comprises a shell, a pin group, at least two wafers and a substrate, wherein the at least two wafers and the substrate are packaged in the shell, the pin group is fixedly connected with the shell, and the at least two wafers are tiled on one surface of the substrate and are electrically connected with the substrate;

the at least two wafers comprise a first wafer and a second wafer, and the first wafer is electrically connected with the second wafer;

the pin group comprises at least two anode pins and a cathode pin, the at least two anode pins comprise a first pin and a second pin, the first pin is electrically connected with the first wafer, the second pin is electrically connected with the second wafer, and the cathode pin is electrically connected with the substrate.

2. The power converter of claim 1, wherein the DC/DC circuit comprises a boost circuit, the boost circuit further comprising an active switching device, an inductor, a capacitor, and a resistor, the anode pin of the diode module being electrically connected to the active switching device and the inductor, the cathode pin of the diode module being electrically connected to the capacitor and the resistor.

3. The power converter of claim 1 or 2, wherein the DC/DC circuit comprises a buck step-down circuit, the buck step-down circuit further comprising an active switching device, an inductor, a capacitor, and a resistor, an anode pin of the diode module being electrically connected to the capacitor and the resistor, and a cathode pin of the diode module being electrically connected to the active switching device and the inductor.

4. A power converter according to any of claims 1 to 3, wherein the DC/DC circuit comprises a DC auxiliary circuit further comprising a transformer, a DC bus and a load, an anode pin of a diode module located on a primary side of the transformer being electrically connected to the main winding of the transformer, a cathode pin of a diode module located on the primary side of the transformer being electrically connected to the DC bus; the anode pin of the diode module positioned on the secondary side of the transformer is electrically connected with the secondary winding of the transformer, and the cathode pin of the diode module positioned on the secondary side of the transformer is electrically connected with the load.

5. The diode module of any one of claims 1 to 4, wherein the first wafer and the second wafer are electrically connected by wires, the wires being metal wires having a wire diameter of 15-50 microns.

6. The power converter according to any of claims 1 to 5, wherein the diode module is a wide bandgap semiconductor device or a silicon-based semiconductor device.

7. The power converter of claim 6, wherein the wide bandgap semiconductor device is a silicon carbide semiconductor device or the wide bandgap semiconductor device is a gallium nitride semiconductor device.

8. A diode module, comprising: the device comprises a shell, a pin group, at least two wafers and a substrate, wherein the at least two wafers and the substrate are packaged in the shell, the pin group is fixedly connected with the shell, and the at least two wafers are tiled on one surface of the substrate and are electrically connected with the substrate;

the at least two wafers comprise a first wafer and a second wafer, and the first wafer is electrically connected with the second wafer;

the pin group comprises at least two anode pins and a cathode pin, the at least two anode pins comprise a first pin and a second pin, the first pin is electrically connected with the first wafer, the second pin is electrically connected with the second wafer, and the cathode pin is electrically connected with the substrate.

9. The diode module of claim 8, wherein the first wafer and the second wafer are electrically connected by wires, the wires being metal wires having a wire diameter of 15-50 microns.

10. The diode module of claim 8 or 9, wherein the diode module is a wide bandgap semiconductor device or a silicon-based semiconductor device.

11. The diode module of claim 10, wherein the wide bandgap semiconductor device is a silicon carbide semiconductor device or the wide bandgap semiconductor device is a gallium nitride semiconductor device.