CN117810099A - Rewiring layer and micro-bump preparation process and electronic device - Google Patents
Rewiring layer and micro-bump preparation process and electronic device Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000002923 metal particle Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 47
- 238000007639 printing Methods 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 230000008021 deposition Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000007921 spray Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 239000000443 aerosol Substances 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 14
- 238000005507 spraying Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 7
- 238000007787 electrohydrodynamic spraying Methods 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 229910001338 liquidmetal Inorganic materials 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 28
- 239000000843 powder Substances 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
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- 235000012431 wafers Nutrition 0.000 description 12
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
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- 239000007769 metal material Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
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- 230000008023 solidification Effects 0.000 description 5
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- 238000010146 3D printing Methods 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention provides a rewiring layer and micro-bump preparation process and an electronic device, wherein the preparation process is used for depositing molten metal micro-droplets on the surface of a substrate through molten metal droplet deposition printing to form conductive circuits of the micro-bumps or the rewiring layer; the metal particles are completely melted in the flight process, then liquid metal microdroplets are accurately deposited as required, and finally a full-density rewiring layer and/or micro-bump array is formed, so that the efficiency is high, at least 20 metal points are printed per second, the flexibility can be customized, the obtained rewiring layer and micro-bumps are small in porosity and low in resistance, and the method can be applied to the technical field of microelectronic advanced packaging.
Description
Technical Field
The invention relates to the technical field of advanced microelectronic packaging, in particular to a rewiring layer and micro-bump preparation process and an electronic device.
Background
The rewiring layer (Redistribution Layers, RDL) and micro bumps (bump) are widely used technologies in advanced packaging.
In the mass production stage, the process involved in preparing the re-wiring layer, the micro-bump and other structures based on the photoetching and electroplating technology route is complex, the working procedures are numerous, and the steps of multi-layer mask manufacturing, multi-time photoetching, metallization, electroplating, etching, grinding and the like are included, so that the problems of large production line investment, high manufacturing process cost, long exchange period and the like exist. Furthermore, the "photolithography+electroplating" technology route is suitable for wafer level processing, but is not suitable for preparing a re-wiring layer and micro-bumps on the core particle, because it is difficult to develop photoresist coating, exposure and other process steps on the core particle. Therefore, there are limitations in the re-wiring layer and the micro bump manufacturing method based on the subtractive manufacturing technique such as the etching method.
In order to overcome the defects of preparing a re-wiring layer and micro-bumps based on a subtractive manufacturing technology such as an etching method, patent US20090294958A1 adopts an inkjet printing technology in an additive manufacturing technology to print nano-silver conductive lines on a wafer, thereby realizing the preparation of the re-wiring layer. However, the nano silver ink has the defects of high porosity of an internal structure, high resistivity and poor reliability after sintering, and is difficult to realize mass production application. Moreover, the materials of the rewiring layer and the micro-bumps are more hopefully copper in industry, however, the nano copper ink technology is not mature, the cost is high, the prepared conductive line has high resistance, and the breakthrough in a short period is difficult. In summary, there are limitations in the redistribution layer and the micro bump prepared based on the nano ink, which are difficult to apply on the production line.
Patent document CN105161432a discloses a chip packaging method, which adopts a laser engineering net shaping technique to print the redistribution lead wire layer, comprising the following steps: spraying metal powder in the through hole by adopting a spray head, and synchronously melting the metal powder by laser emitted by a laser emitter; forming the conductive post by molten metal powder; or spraying metal powder on the surface of the plastic sealing layer by adopting a spray head according to a preset route, and synchronously melting the metal powder by laser emitted by a laser emitter; the molten metal powder is formed to form the metal lines. The method is to sinter the metal after deposition by laser, and has the problems that the sintering can not be completed, and the chip or the carrier plate is damaged by heat generated by sintering the laser on the chip.
Thus, there remains a need for improvements in existing re-wiring layer and micro bump fabrication processes.
Disclosure of Invention
Therefore, the invention provides a re-wiring layer and a micro-bump preparation process, wherein molten metal micro-droplets are deposited on the surface of a substrate by molten metal droplet deposition printing, so that conductive circuits of the micro-bumps or the re-wiring layer are formed.
The technical scheme of the invention is as follows:
in one aspect, the invention provides a process for preparing a rewiring layer and a micro-bump, which comprises the steps of directly depositing molten metal micro-droplets on the surface of a substrate by molten metal droplet deposition printing, controlling the spreading and solidification processes of the micro-droplets, and finally cooling to form a conductive circuit of a high-density metal micro-bump or a rewiring layer; the substrate may be planar or curved. The substrate material may be a silicon-based material, glass, quartz, sapphire, siC, or the like. Common substrates are IC carriers or chips, etc., i.e. on a die or wafer, which can be printed by deposition.
The molten metal droplet deposition printing is to jet metal particles from a printer nozzle by an aerosol jet technology or an electrohydrodynamic jet technology, and to melt the metal particles by utilizing light energy or electromagnetic energy in the flight and impact process of the metal particles so as to form molten metal micro droplets when the metal particles are contacted with a substrate;
the aerosol spraying is to take metal particles out of the spray head in an aerosol form through airflow, and narrow an aerosol beam with the metal particles by focusing the airflow beam; the electrohydrodynamic spraying technology is to deform the fluid of the spray head into a Taylor cone by an electric field added between the spray head and the substrate, the single metal particles are attached to the cone opening, and finally the deformed liquid at the spray head pushes out the metal particles due to the instability of a gas-liquid interface.
The light energy refers to focused light beams emitted by laser, LEDs and gaseous light sources, the electromagnetic energy refers to electromagnetic induction heating, and the power or frequency of the energy can be adjusted so as to control the molten state of the metal particles and the temperature of micro liquid drops.
Preferably, the metal droplet deposition frequency is >20Hz.
Preferably, when the aerosol is sprayed, a movable baffle is arranged to control the opening and closing of the metal particles, and when the movable baffle blocks the spray head, the movable baffle is closed; when the movable baffle is far away from the spray head, the movable baffle is opened;
when the electrohydrodynamic spraying is performed, electrohydrodynamic deformation or stillness of the liquid drops at the spray head is controlled by modulating an electric field applied between the spray head and the target substrate, so that spraying or stillness of the metal particles attached to the surfaces of the liquid drops is realized.
The material of the metal is not limited, and can be melted by laser, electromagnetic waves or the like, and common conductive materials in the semiconductor industry such as copper, gold, titanium or tungsten are commonly used; the shape of the metal particles is not limited to a sphere, and may be spherical or non-spherical, and preferably the size of the metal particles is 1nm to 1mm; further preferably, the metal particles have a particle size of 1 to 100. Mu.m.
Preferably, the line width of the conductive line is 1 μm to 10mm, and the line height is 1 μm to 1mm; further preferably, the line width is 1-10 μm and the line height is 1-5 μm.
Preferably, the diameter size of the micro-convex points is 1 μm to 10mm, and the height is 1 μm to 1mm; further preferably, the micro-bump has a diameter of 1-10 μm and a height of 1-30 μm.
The invention also provides an electronic device, which comprises the rewiring layer and the micro-bump array obtained by the preparation process.
Preferably, the electronic device further comprises a dielectric layer, and a plurality of re-wiring layers, adjacent re-wiring layers being isolated by the dielectric layer, electrical connections of each re-wiring layer being interconnected by vias of the dielectric layer.
Preferably, the dielectric layer has a thickness of 1 μm to 1mm, more preferably 1-5 μm.
Preferably, the dielectric layer material is polyimide, silicon dioxide or sapphire.
Preferably, the dielectric layer is prepared by aerosol jet printing or inkjet printing.
Compared with the prior art, the conductive circuit of the metal micro-bump or the rewiring layer is formed by adopting the molten metal drop to deposit and print on the surface of the substrate. The method is characterized in that the metal particles are completely melted in the flight process of the metal particles or before the metal impacts the substrate, then the liquid metal droplets are accurately deposited as required, the spreading and solidification processes of the micro droplets are controlled, the full-density rewiring layer and/or micro-bump array is finally formed by utilizing the liquid-solid solidification forming of the metal, the preparation of the core particle or the rewiring layer and the micro-bumps on the wafer can be completed by only one device, the efficiency is high, at least 20 metal dot printing is realized per second, the flexibility can be customized, and the obtained rewiring layer and micro-bumps are small in porosity and low in resistance.
Drawings
FIG. 1 is a schematic diagram of a process flow for manufacturing an electronic device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a molten metal droplet deposition printing technique according to the present invention;
FIG. 3 is a schematic diagram of a second embodiment of the molten metal drop deposition printing technique of the present invention.
Detailed Description
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. The data so used may be interchanged as appropriate in order to describe the embodiments of the invention herein.
The traditional process based on the wafer level process adopts the traditional process of the 'photoetching+electroplating' technical route, namely the preparation of a rewiring layer and a micro-bump of a core particle unit cannot be completed, but the preparation of the rewiring layer and the micro-bump on the core particle is difficult, and although a wire circuit can be printed on a wafer by adopting the ink-jet printing technology, the wire circuit is prepared by depositing metal powder on a substrate and then melting, so that the problems of high porosity and heat bearing of the substrate exist.
The invention provides a rewiring layer and a micro-bump preparation process, which are characterized in that molten metal micro-droplets are deposited on the surface of a substrate through a molten metal droplet deposition printing technology to form conductive circuits of the micro-bumps or the rewiring layer; the substrate may be planar or curved. The substrate material may be a silicon-based material, glass, quartz, sapphire, siC, or the like. Common substrates are IC carriers or chips, etc., i.e. on a die or wafer, which can be printed by deposition.
The molten metal droplet deposition printing technology is to spray metal particles from a printer nozzle by an aerosol spray technology or an electrohydrodynamic spray technology, the spraying speed of the metal particles can be 0.5-2m/s, and the metal particles are melted by utilizing light energy or electromagnetic energy in the flying process of the metal particles, so that molten metal micro droplets are formed.
Referring to fig. 2-3, molten metal droplet deposition printing is a process in which metal particles are ejected from a printer head by aerosol ejection or electrohydrodynamic ejection, and melted by light or electromagnetic energy during the flight and impact of the metal particles, thereby forming molten metal microdroplets upon contact with a substrate.
Wherein the aerosol spraying technology is that metal particles are carried out of a spray head in an aerosol form through airflow, and aerosol beams with the metal particles are narrowed through focusing the airflow beam; the electrohydrodynamic spraying technology is to deform the nozzle fluid into a taylor cone by an electric field applied between the nozzle and the substrate, and the single metal particles adhere to the cone opening, and finally the deformed liquid at the nozzle pushes out the metal particles due to the instability of the gas-liquid interface.
And directly and accurately depositing the metal micro-droplets on the surface of the substrate to form the micro-bump array, or continuously depositing and fusing to form the conductive circuit of the rewiring layer.
The light energy can be a focused light beam emitted by laser, LED and a gaseous light source, and the electromagnetic energy refers to electromagnetic induction heating, and the power or frequency of the energy can be adjusted so as to control the deposition speed.
The metal is melted in the flying process and then deposited, so that the problems of poor fusion and high porosity caused by incomplete melting can be avoided, and the common problems that the silver nano particles are difficult to completely sinter and fuse in the preparation process of the rewiring layer and the copper pillar micro-bump based on silver nano particle ink, the porosity of a printing structure is high, and the electrical conductivity and the mechanical property are poor can be effectively solved.
The obtained product has small internal hole rate, the resistance is equivalent to that of a pure metal material, and the heat dissipation is fast, so that the reliability is superior to that of a conductive circuit layer and a micro-bump array prepared by a nanoparticle sintering technology.
And efficient, in one embodiment, at least 20 metallic dot prints per second are achieved.
In one embodiment, an aerosol spraying technology is adopted, metal particles are continuously sprayed, a movable baffle is arranged to control the opening and closing of the emergent metal particles, and when the movable baffle blocks the spray head, the movable baffle is closed; when the movable baffle is far away from the spray head, the movable baffle is opened, so that the control is convenient.
In one embodiment, electrohydrodynamic spraying is used to control the electrohydrodynamic deformation or rest of the droplet at the spray head by modulating the electric field applied between the spray head and the target substrate, thereby effecting the spraying or rest of the metal particles attached to the surface of the droplet.
The invention adopts light energy or electromagnetic energy to melt metal, high energy input, the metal material has wide selectable range, as long as the metal material can be melted by laser, electromagnetic wave and the like, common conductive materials such as copper, gold, titanium, tungsten and the like are commonly used in semiconductor industry, the input material is metal powder, nano ink does not need to be prepared, the problems of high cost and uneven fusion of the nano ink prepared in the prior art are avoided, in addition, the shape of metal particles is not limited to a sphere, the metal particles can be a sphere or a non-sphere, the material input and the energy input in 3D printing are solved from the source, so that the size of a cladding unit is completely determined by the particle size of the powder, namely, how large the powder can obtain large molten liquid drops; wherein the metal particle spraying process based on electrohydrodynamic spraying is suitable for small particle size powders, the size of the metal particles can be 1nm to 1mm; preferably, the particle size is between 1 and 100 microns to meet the size requirements of the re-wiring layer and the copper pillar micro bump, and further preferably, the particle size is between 1 and 30 microns.
In the process, a mask is not required to be used, the process is directly printed and molded, the process meets the requirements of core particle level and wafer level processes, and the surface of the micro-bump array is compatible with a surface mounting process after being processed.
In one embodiment of the invention, the line width of the resulting conductive line is 1 μm to 10mm and the line height is 1 μm to 1mm using a molten metal droplet deposition printing technique.
In one embodiment of the invention, the line width of the resulting conductive line is 1-10 μm and the line height is 1-5 μm using a molten metal droplet deposition printing technique.
In one embodiment of the invention, the diameter dimension of the resulting micro-bump is 1 μm to 10mm and the height is 1 μm to 1mm using a molten metal droplet deposition printing technique.
In one embodiment of the invention, the diameter of the micro-convex points of the obtained micro-convex points is 1-10 mu m and the height is 1-30 mu m by adopting a molten metal liquid drop deposition printing technology.
In one embodiment of the present invention, an electronic device is provided that includes a redistribution layer and a micro bump array, such as an IC carrier or chip, obtained by embodiments of the present invention.
Because the size of the metal micro-droplets is smaller than the size of the openings of the dielectric layer, the requirement of completely filling the through holes can be met, and therefore, the molten metal droplet deposition printing technology is also tried for preparing a plurality of rewiring layers.
In one embodiment of the invention, an electronic device includes a plurality of rewiring layers, and further includes dielectric layers, adjacent rewiring layers being isolated by the dielectric layers, electrical connections of each of the rewiring layers being interconnected by vias of the dielectric layers.
Typically, the dielectric layer material is polyimide, silicon dioxide or sapphire, and if polyimide, it can be prepared by aerosol jet printing or ink jet printing; the dielectric layer has a thickness of 1 μm to 1mm, preferably 1-5 μm.
In one embodiment, as shown in FIG. 1, an electronic device, comprises the following manufacturing steps:
1) Preparing a chip;
2) Firstly, polyimide is sprayed and printed on the surface of a chip, and a dielectric layer with the thickness of 5 mu m is obtained after solidification;
3) Preparing a rewiring layer by adopting molten metal droplet deposition printing copper nano particles on the surface of the solidified dielectric layer, and filling through holes, wherein the line width of a conductive line is 10 mu m, and the line height is 5 mu m;
4) Printing polyimide on the surface of the rewiring layer, and curing to form a dielectric layer with the thickness of 5 mu m;
5) Preparing a rewiring layer on the surface of the dielectric layer by adopting molten metal droplet deposition printing copper nano-particles, and filling through holes, wherein the line width of a conductive line is 10 mu m, and the line height is 5 mu m;
6) Preparing a micro-bump array (bonding pad) by adopting molten metal droplet deposition to print copper nano particles on the surface of the last rewiring layer, wherein the diameter of each micro-bump is 10 mu m, and the height of each single micro-bump is 30 mu m;
7) And printing a polyimide dielectric layer on the last conductive circuit layer and curing.
The rewiring layer and the micro-bump array of this embodiment are accomplished with a molten metal droplet deposition printing technique apparatus, which may be a single nozzle or a plurality of nozzle groups. In the spray head groups, each spray head group comprises two or more spray heads, metal microparticles are sprayed respectively, 30 metal dot printing is realized per second, and the preparation of a rewiring layer and micro-bumps on a chip is completed by controlling the movement of a sample stage.
The molten metal droplet deposition printing technology of the invention completely melts metal particles in the flying process of the metal particles, then accurately deposits liquid metal droplets as required, and finally forms a full-density rewiring layer and/or micro-bump array by utilizing metal liquid-solid solidification forming, thereby having the following advantages:
(1) The problems of complex process, high cost, long period and the like of the traditional wafer level manufacturing process are solved, the method is more efficient and stable, a mask is not required to be used, direct printing and forming are realized, the process meets the requirements of core particle level and wafer level manufacturing processes, and the surface of the micro-bump array can be compatible with a surface mounting process after being processed.
(2) Compared with the traditional wafer-level process, the invention has wide selectable range of metal materials, can prepare a three-dimensional circuit structure, and can better meet the research and development requirements of rapid iteration.
(3) The rewiring layer and the micro-convex points obtained by the molten metal droplet deposition printing technology have small internal hole rate, the resistance is close to the resistance of the metal material, and the reliability is superior to that of the nanoparticle sintering technology; compared with the printing technology based on silver nanoparticle ink, the printing technology based on silver nanoparticle ink can effectively solve the common problems that silver nanoparticles are difficult to sinter and fuse completely in the preparation process of a rewiring layer and a copper pillar micro-bump, and the printing structure has high porosity and poor electrical conductivity and mechanical property. In addition, the existing nano copper ink has the problems of high slurry cost, uneven fusion of copper nano particles and the like.
(4) The molten metal droplet deposition printing technology can deposit and print on core particles or wafers, and is also applicable to the preparation of a plurality of rewiring layers; the rewiring layer and the micro-bumps can be prepared on the surface of the chip by combining the dielectric layer printing technology, and the manufacturing precision is equivalent to that of the traditional process. The rewiring layer and the micro-bumps are prepared on the surface of the IC carrier plate, the manufacturing precision is higher than that of the IC carrier plate, and the problems of low stability and low yield in the current IC carrier plate industry are solved.
(5) The material input and the energy input in 3D printing are solved from the source, so that the size of a cladding unit is completely determined by the particle size of powder, namely, how large powder can obtain how large molten liquid drops; whereas the metal particle jetting process based on electrohydrodynamic jet printing is applicable to small particle size powders. And the powder is melted in flight, so that the problem that the chip or the carrier is damaged by heat required by melting is avoided.
It should be understood that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent structures or equivalent processes using the descriptions of the present invention and the accompanying drawings, or direct or indirect application in other relevant technical fields, are included in the scope of the present invention.
Claims (10)
1. A process for preparing a rewiring layer and a micro-bump is characterized in that molten metal micro-droplets are deposited on the surface of a substrate through molten metal droplet deposition printing, and conductive lines of the micro-bump or the rewiring layer are formed;
the substrate is a plane or a curved surface;
the molten metal droplet deposition printing is to spray metal particles from a printer nozzle through aerosol spray or electrohydrodynamic spray, and to melt the metal particles by utilizing light energy or electromagnetic energy in the flight process of the metal particles so as to form molten metal micro droplets;
the aerosol spraying is to take metal particles out of the spray head in an aerosol form through airflow, and narrow an aerosol beam with the metal particles by focusing the airflow beam;
the electrohydrodynamic spraying is to deform the nozzle fluid into a taylor cone by an electric field added between the nozzle and the substrate, single metal particles are attached to the cone opening, and finally the deformed liquid at the nozzle pushes out the metal particles due to the instability of a gas-liquid interface.
2. The preparation process according to claim 1, wherein a movable baffle is provided to control the opening and closing of the emission of the metal particles during the aerosol spraying, and the movable baffle is closed when the movable baffle blocks the spray head; when the movable baffle is far away from the spray head, the movable baffle is opened;
when the electrohydrodynamic spraying is performed, electrohydrodynamic deformation or stillness of the liquid drops at the spray head is controlled by modulating an electric field applied between the spray head and the target substrate, so that spraying or stillness of the metal particles attached to the surfaces of the liquid drops is realized.
3. The preparation process according to claim 1, wherein the metal particles are spherical or non-spherical, and the size of the metal particles is 1nm to 1mm; preferably, the metal particles have a particle size of 1-100 μm.
4. The manufacturing process according to claim 1, wherein the line width of the conductive line is 1 μm to 10mm and the line height is 1 μm to 1mm; preferably the line width is 1-10 μm and the line height is 1-5 μm.
5. The manufacturing process according to claim 1, wherein the micro-bump has a diameter size of 1 μm to 10mm and a height of 1 μm to 1mm; preferably, the diameter of the micro-convex points is 1-10 mu m, and the height is 1-30 mu m.
6. An electronic device comprising a redistribution layer and a micro bump array obtained by the process according to any one of claims 1 to 5.
7. The electronic device of claim 6, further comprising a dielectric layer, and a rewiring layer, adjacent rewiring layers being isolated by the dielectric layer, electrical connections of each rewiring layer being interconnected by vias of the dielectric layer.
8. An electronic device according to claim 7, characterized in that the dielectric layer has a thickness of 1 μm to 1mm, preferably 1-5 μm.
9. The electronic device of claim 7, wherein the dielectric layer material is polyimide, silicon dioxide, or sapphire.
10. The electronic device of claim 7, wherein the dielectric layer is prepared by aerosol jet printing or inkjet printing.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311719774.5A CN117810099A (en) | 2023-12-14 | 2023-12-14 | Rewiring layer and micro-bump preparation process and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311719774.5A CN117810099A (en) | 2023-12-14 | 2023-12-14 | Rewiring layer and micro-bump preparation process and electronic device |
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| CN117810099A true CN117810099A (en) | 2024-04-02 |
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| CN202311719774.5A Pending CN117810099A (en) | 2023-12-14 | 2023-12-14 | Rewiring layer and micro-bump preparation process and electronic device |
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