CN117805775A - Exposure adjusting method and device for laser sensor - Google Patents

Exposure adjusting method and device for laser sensor Download PDF

Info

Publication number
CN117805775A
CN117805775A CN202311844582.7A CN202311844582A CN117805775A CN 117805775 A CN117805775 A CN 117805775A CN 202311844582 A CN202311844582 A CN 202311844582A CN 117805775 A CN117805775 A CN 117805775A
Authority
CN
China
Prior art keywords
exposure
value
cmos module
laser sensor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311844582.7A
Other languages
Chinese (zh)
Inventor
王威
姚文政
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Phoskey Shenzhen Precision Technology Co ltd
Original Assignee
Phoskey Shenzhen Precision Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phoskey Shenzhen Precision Technology Co ltd filed Critical Phoskey Shenzhen Precision Technology Co ltd
Priority to CN202311844582.7A priority Critical patent/CN117805775A/en
Publication of CN117805775A publication Critical patent/CN117805775A/en
Pending legal-status Critical Current

Links

Landscapes

  • Facsimile Scanning Arrangements (AREA)

Abstract

The embodiment of the invention discloses an exposure adjusting method and equipment of a laser sensor. The laser sensor comprises a laser emitting module and a CMOS module, wherein the CMOS module is used for receiving laser signals reflected by a detected object, the CMOS module comprises a normal exposure mode and an HDR mode, and the exposure adjusting method comprises the following steps: acquiring an expected exposure value, wherein the expected exposure value is an exposure parameter required by normal operation of the laser sensor in a normal exposure mode; adjusting the magnitude of at least one exposure parameter of the CMOS module according to the expected exposure value, wherein the exposure parameter comprises exposure time, laser power and gain of the CMOS module; and according to the adjusted exposure parameters, the laser sensor continues to work in a normal exposure mode. The exposure adjusting method provided by the embodiment of the invention improves the measuring precision of the laser sensor.

Description

Exposure adjusting method and device for laser sensor
Technical Field
The invention relates to the technical field of high-precision detection, in particular to an exposure adjusting method and equipment of a laser sensor.
Background
At present, a laser displacement sensor and a laser profile sensor generally apply the principle of a triangular reflection method, namely, laser beams emitted by a laser diode irradiate the surface of a measured object, and light rays reflected by diffuse reflection are projected onto a photosensitive element matrix through a group of lenses. According to the difference of the surface of the measured object from the laser light source, the imaging positions on the photosensitive element matrix are different, and the surface displacement of the measured object can be confirmed by calculating the center of the imaging light spot on the photosensitive element matrix. Because of the large difference in diffuse reflectance of the surfaces of different objects, the intensity of light received by CMOS (Complementary Metal Oxide Semiconductor ) sensors varies greatly when measuring different objects at the same laser power and exposure settings. The distance measurement principle of the laser displacement (contour) sensor is to confirm the surface displacement of the measured object according to the center of the imaging light spot on the photosensitive element matrix, so that high-quality imaging needs to be obtained through dynamic exposure adjustment, and the light spot deformation caused by underexposure or overexposure is avoided, so that the loss of measurement precision is caused.
The existing exposure algorithm generally requires multiple frames of exposure attempts to confirm proper exposure parameters (such as laser power, exposure time, CMOS gain, etc.), when the laser displacement sensor scans a material, a region with abrupt color change, or a complex object surface, because additional CMOS frames are required to adjust the exposure parameters, the response delay of the laser sensor or the decrease of the actual frame rate of measurement is caused, which affects the application of the laser displacement sensor in the high-speed measurement field. There is a need for a method for rapidly adjusting the exposure parameters of a laser sensor and reducing the response delay of the laser sensor
Disclosure of Invention
The embodiment of the invention provides a method and equipment for adjusting exposure of a laser sensor, which can be used for rapidly and accurately adjusting exposure abnormity of the laser sensor, improving the measurement accuracy of the laser sensor and reducing delay response and frame rate drop.
According to an aspect of the present invention, there is provided an exposure adjustment method of a laser sensor including a laser emission module and a CMOS module for receiving a laser signal reflected by a detection object, the CMOS module including a normal exposure mode and an HDR mode, the exposure adjustment method including:
acquiring an expected exposure value, wherein the expected exposure value is an exposure parameter required by normal operation of the laser sensor in a normal exposure mode;
adjusting the magnitude of at least one of the exposure parameters of the CMOS module according to the desired exposure value, the exposure parameters including exposure time, laser power, and gain of the CMOS module;
and according to the adjusted exposure parameters, the laser sensor continues to work in a normal exposure mode.
Optionally, the desired exposure value satisfies: v=p×t×g;
wherein V is a desired exposure value, T is exposure time, P is laser power, and G is CMOS module gain.
Optionally, before the desired exposure value is obtained, the method further includes:
acquiring a first peak value of the pixel quantity received by the CMOS module in an HDR mode;
and acquiring a second peak value of the pixel quantity received by the CMOS module in the normal exposure mode according to the first peak value.
Optionally, before acquiring the first peak value of the pixel amount received by the CMOS module in the HDR mode, the method further includes:
judging whether the laser sensor is normally exposed;
if not, controlling the CMOS module to start an HDR mode.
Optionally, adjusting a magnitude of at least one exposure parameter of the CMOS module according to the desired exposure value includes:
and adjusting the value of the exposure parameter of the CMOS module according to the expected exposure value in a preset sequence, wherein the preset sequence is to firstly adjust the exposure time, then adjust the laser power and finally adjust the gain of the CMOS module.
Optionally, the step of adjusting the magnitude of the exposure parameter of the CMOS module according to the desired exposure value in a preset order includes:
adjusting the exposure time of the CMOS module according to the expected exposure value to obtain a first exposure value in a normal exposure mode;
judging whether the first exposure value is equal to the expected exposure value or not;
and if not, adjusting the laser power of the CMOS module according to the expected exposure value.
Optionally, the step of adjusting the laser power of the CMOS module according to the desired exposure value further comprises:
obtaining a second exposure value in a normal exposure mode according to the adjusted laser power;
judging whether the second exposure value is equal to the expected exposure value or not;
if not, the gain of the CMOS module is adjusted according to the expected exposure value.
Optionally, the step of adjusting the gain of the CMOS module according to the desired exposure value comprises:
obtaining a third exposure value in a normal exposure mode according to the gain of the adjusted CMOS module;
judging whether the third exposure value is equal to the expected exposure value or not;
if not, readjusting the exposure time and the laser power according to the gain of the CMOS module and the expected exposure value.
According to another aspect of the present invention, there is provided an electronic device comprising at least one processor and a laser sensor, the processor being electrically connected to the laser sensor; and
a memory communicatively coupled to the at least one processor; wherein,
the memory stores a computer program executable by the at least one processor to enable the at least one processor to perform the exposure adjustment method of the laser sensor as described above.
According to the exposure adjusting method and the exposure adjusting device for the laser sensor, the expected exposure value is obtained according to the exposure time, the hardware setting of the laser emission module and the hardware setting of the CMOS module, the exposure parameters of the laser sensor are adjusted according to the obtained expected exposure value, and the laser sensor continues to work in a normal exposure mode. By acquiring corresponding exposure parameters for enabling the laser sensor to form a clear and stable image in a normal exposure mode, the abnormal exposure phenomenon of the laser sensor can be quickly and accurately regulated without additional frame number, the measurement precision of the laser sensor is improved, and delay response and frame rate reduction are reduced.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of an exposure adjustment method of a first laser sensor according to an embodiment of the present invention;
FIG. 2 is a flowchart of a second method for adjusting exposure of a laser sensor according to an embodiment of the present invention;
FIG. 3 is an exemplary graph of response curves of the HDR mode of the laser sensor according to an embodiment of the present invention;
FIG. 4 is a flowchart of a third method for adjusting exposure of a laser sensor according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a processing apparatus according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Example 1
Fig. 1 is a flowchart of a first exposure adjustment method of a laser sensor according to an embodiment of the present invention, and referring to fig. 1, the method may be executed by a processor in an electronic device, where the laser sensor includes a laser emitting module and a CMOS module, the CMOS module is configured to receive a laser signal reflected by a detected object, and the CMOS module includes a normal exposure mode and an HDR mode, and the exposure adjustment method includes:
s110, acquiring a desired exposure value.
Wherein the expected exposure value is an exposure parameter required for normal operation of the laser sensor in a normal exposure mode, and the expected exposure value is related to the exposure time, the hardware setting of the laser emitting module and the hardware setting of the CMOS module. Illustratively, the desired exposure value satisfies: v=p×t×g; where V is the desired exposure value, T is the exposure time, P is the laser power of the laser emitting module, and G is the CMOS module gain. The expected exposure value is used for adjusting the laser sensor instead of the conventional light receiving amount adjusting parameter in the known technology, so that the laser sensor is ensured to be exposed normally.
S120, adjusting the value of at least one exposure parameter of the CMOS module according to the expected exposure value.
The CMOS is a design process of an integrated circuit, and can manufacture basic elements of an NMOS (n-type MOSFET) and a PMOS (p-type MOSFET, p-type field effect transistor) on a silicon wafer template, and is called CMOS because the NMOS and the PMOS are complementary in physical characteristics. The exposure parameters include exposure time, laser power and gain of the CMOS module, wherein the exposure time is the time from when the laser emitting module emits laser signals to when the CMOS module receives reflected laser signals, and when the brightness is poor, the exposure time needs to be longer to ensure that the CMOS module receives enough light, the laser power is the power of the laser signals emitted by the laser emitting module, and the gain of the CMOS module is the multiplying power of the laser signals amplified by the CMOS module, and the gain is related to hardware setting of the CMOS module.
Illustratively, the exposure parameters of the laser sensor are adjusted according to the desired exposure value such that the product of the adjusted exposure time, the laser power, and the gain of the CMOS module reaches the desired exposure value.
S130, according to the adjusted exposure parameters, the laser sensor continues to work in a normal exposure mode.
And adjusting the exposure parameters of the laser sensor according to the expected exposure value to obtain corresponding exposure parameters which can enable the laser sensor to form a clear and stable image in a normal exposure mode.
According to the exposure adjusting method for the laser sensor, provided by the embodiment of the invention, the expected exposure value is obtained according to the exposure time, the hardware setting of the laser emission module and the hardware setting of the CMOS module, the exposure parameter of the laser sensor is adjusted according to the obtained expected exposure value, and the laser sensor continues to work in a normal exposure mode. By acquiring corresponding exposure parameters for enabling the laser sensor to form a clear and stable image in a normal exposure mode, the abnormal exposure phenomenon of the laser sensor can be quickly and accurately regulated without additional frame number, the measurement precision of the laser sensor is improved, and delay response and frame rate reduction are reduced.
On the basis of the above embodiment, fig. 2 is a flowchart of an exposure adjustment method of a second laser sensor according to an embodiment of the present invention, and referring to fig. 2, the exposure adjustment method provided by the embodiment of the present invention includes:
s210, judging whether the laser sensor exposure is normal.
The laser sensor is used for detecting the position of the object to be detected, wherein the underexposure or overexposure occurs when the laser sensor is abnormally exposed, namely, a picture received by the CMOS module is excessively bright or excessively dark, a waveform is deformed when the picture is excessively bright, the waveform is excessively low when the picture is excessively dark, accurate information cannot be displayed, and the laser sensor cannot obtain the accurate position of the object to be detected.
If the laser sensor exposure is abnormal, executing S220; if the laser sensor is exposed normally, the subsequent steps are not needed to be executed, and the laser sensor works normally.
S220, controlling the CMOS module to start an HDR mode.
Where the HDR mode is a mode that achieves a larger exposure dynamic range image than in ordinary digital image technology, the HDR generates a high dynamic range image from a set of differently set-up images.
FIG. 3 is a graph showing an example of response characteristic of the HDR mode of the laser sensor according to the embodiment of the present invention, referring to FIG. 3, the abscissa is the laser brightness of the laser sensor, the ordinate is the pixel amount received by the CMOS module in the HDR mode, the slope is the gain of the CMOS module of the laser sensor, H sat The amount of pixels is received for saturation of the CMOS module. The HDR mode may be a commonly used stepwise HDR mode, and in a dim light state, the gain of the CMOS module is higher, the sensitivity is higher, a sufficiently clear image can be obtained without strong laser, and as the laser brightness increases, the gain of the CMOS module decreases, and a higher brightness than that in the normal exposure mode is required to reach saturation, so that the HDR modeThe sensitivity of the formula is higher than that of the normal exposure mode, and the measurement range is wider.
S230, acquiring a first peak value of the pixel quantity received by the CMOS module in the HDR mode.
The received pixel quantity can be expressed as the brightness of the image received by the CMOS module, and the pixel quantity is related to the laser power of the laser emitting module and the gain of the CMOS module. The higher the gain of the CMOS module, the easier the received pixel count reaches saturation for the same laser power. The first peak is the amount of pixels the CMOS module receives after the HDR mode is turned on.
S240, obtaining a second peak value of the pixel quantity received by the CMOS module in the normal exposure mode according to the first peak value.
The laser power of the laser emitting module can be obtained according to the first peak value in the HDR mode and the gain of the CMOS module, so that the second peak value of the received pixel quantity can be obtained according to the laser power and the gain of the CMOS module in the normal exposure mode.
The first peak value is smaller than or equal to the saturated receiving pixel quantity of the CMOS module, and the second peak value obtained according to the first peak value is smaller than or equal to the saturated receiving pixel quantity of the CMOS module, so that the adjusted laser sensor can be exposed normally, and meanwhile, the first peak value cannot be too small, and the second peak value can be obtained conveniently. As one example, the first peak value is equal to or less than 90% of the saturated received pixel amount, and the first peak value is equal to or greater than 30% of the saturated received pixel amount.
S250, acquiring a desired exposure value.
Wherein the desired exposure value may be determined by:
acquiring;
wherein V is E To the desired exposure value, H N At the second peak value, V N For the exposure value of the laser sensor in HDR mode, H sat The pixel quantity is received for saturation of CMOS. V (V) N And H is N Proportional to H N The laser power, CMOS gain and exposure time in the HDR mode at this time can be obtained,v can be obtained from v=p×t×g N Then can acquire V E
And S260, adjusting the value of at least one exposure parameter of the CMOS module according to the expected exposure value.
And S270, according to the adjusted exposure parameters, the laser sensor continues to work in a normal exposure mode.
According to the exposure adjusting method provided by the embodiment of the invention, the HDR mode is started when the exposure of the laser sensor is abnormal, the second peak value of the pixel quantity received by the metal oxide semiconductor module in the normal exposure mode is obtained according to the first peak value of the pixel quantity received by the CMOS module in the HDR mode, the expected exposure value is obtained according to the second peak value, and the exposure parameter of the laser sensor is adjusted according to the expected exposure value, so that the laser sensor normally works in the normal exposure mode. The exposure parameters to be adjusted are acquired by starting an HDR mode with high sensitivity and wide measurement range, so that the laser sensor can be quickly and accurately adjusted, and the normal exposure can be recovered after the next frame of the laser sensor.
On the basis of the above embodiment, fig. 4 is a flowchart of an exposure adjustment method of a third laser sensor according to an embodiment of the present invention, and referring to fig. 4, the exposure adjustment method according to the embodiment of the present invention includes:
s301, acquiring a desired exposure value.
S302, adjusting the numerical value of the exposure parameters of the CMOS module according to a preset sequence according to the expected exposure value.
The preset sequence is to adjust the exposure time, then adjust the laser power, and finally adjust the gain of the CMOS module, compared with the laser power and the gain of the CMOS module, the linearity of the exposure time is better, and the adjustment is more convenient, so that the exposure time is adjusted first, the gain discreteness of the CMOS module is stronger, the adjustment is not easy, and the final adjustment is needed. The exposure parameters are adjusted according to the preset sequence, so that the exposure parameters which are the same as the expected exposure values can be adjusted more quickly, and the loss caused by response delay of the laser sensor is reduced.
S303, adjusting the exposure time of the CMOS module according to the expected exposure value to obtain a first exposure value in a normal exposure mode.
Wherein the first exposure value is the product of the adjusted exposure time, the laser power and the CMOS module gain.
S304, judging whether the first exposure value is equal to the expected exposure value.
Illustratively, the first exposure value is equal to the desired exposure value, at which time an exposure parameter has been obtained that causes the laser sensor to obtain a stable clear image in the normal exposure mode, and the first exposure value is not equal to the desired exposure value, at which time merely adjusting the exposure time does not result in a desired exposure parameter, and continuing to adjust the laser power is required to obtain an exposure parameter that causes the laser sensor to obtain a stable clear image in the normal exposure mode.
If the first exposure value is equal to the expected exposure value, then S312 is executed; if the first exposure value is not equal to the desired exposure value, S305 is performed.
S305, adjusting the laser power of the CMOS module according to the expected exposure value.
The laser power of the CMOS module may be adjusted by changing or blocking the laser used by the laser sensor, which is not particularly limited in the embodiment of the present invention.
S306, obtaining a second exposure value in the normal exposure mode according to the adjusted laser power.
The second exposure value is the product of the exposure time, the adjusted laser power and the gain of the CMOS module.
S307, judging whether the second exposure value is equal to the expected exposure value.
Illustratively, the second exposure value is equal to the desired exposure value, at which time an exposure parameter has been obtained that causes the laser sensor to obtain a stable clear image in the normal exposure mode, and the second exposure value is not equal to the desired exposure value, at which time only the exposure time and the laser power are adjusted, and the gain of the CMOS module is not adjusted, and the exposure parameter is continuously adjusted to obtain the stable clear image in the normal exposure mode.
If the second exposure value is equal to the expected exposure value, then S312 is performed; if the second exposure value is not equal to the desired exposure value, S308 is performed.
And S308, adjusting the gain of the CMOS module according to the expected exposure value.
The gain of the CMOS module can be adjusted by adjusting the gear of the CMOS module, the gain of the CMOS module has strong discreteness, and changing the gain of the CMOS module may change the imaging characteristic of the laser sensor.
S309, obtaining a third exposure value in the normal exposure mode according to the gain of the adjusted CMOS module.
Wherein the second exposure value is the product of the exposure time, the laser power and the adjusted CMOS module gain.
S310, judging whether the third exposure value is equal to the expected exposure value.
The gain of the CMOS module is the multiplying power of signal amplification, the gain is generally divided into digital gain and analog gain, the analog gain is the process of sensing photons by pixel points and converting the photons into analog signal amplification, and the signal intensity of linear amplification input is regulated; the digital gain is the process of converting the analog-digital conversion into digital signal amplification, the pulse amplitude of the analog-digital conversion input is regulated, and each gain can be independently regulated to multiple of the gain. Illustratively, the gains may be 0.5 times, 1 times, 2 times, and 4 times. When the third exposure value is equal to the expected exposure value, the exposure parameter for enabling the laser sensor to obtain a stable and clear image in the normal exposure mode is obtained, the exposure parameter does not need to be continuously adjusted, when the third exposure value is not equal to the expected exposure value, the variability of the gain of the CMOS module possibly causes the exposure parameter which is equal to the expected exposure value to be not adjusted, and when the exposure time and the laser power need to be readjusted to obtain the exposure parameter which is equal to the expected exposure value. As an example, when the desired exposure value is 140, the adjustment range of the exposure time is 0.001 seconds-1 second, the adjustment range of the laser power is 1 μw-100 μw, the gain of the CMOS module is 0.5 times, 1 time and 2 times, the adjustment exposure time is 1 second, when the laser power is 100 μw, the gain of the CMOS module is directly adjusted to obtain a third exposure value which is not equal to the desired exposure value, the gain of the CMOS module is 2 times, and the exposure time and the laser power are readjusted to make the adjusted third exposure value equal to the desired exposure value.
If the third exposure value is equal to the expected exposure value, then S312 is performed; if the third exposure value is not equal to the desired exposure value, S311 is performed.
S311, readjusting the exposure time and the laser power according to the gain of the CMOS module and the expected exposure value.
The exposure parameters equal to the expected exposure value cannot be adjusted due to the dispersion of the gain of the CMOS module, and the exposure time and the laser power need to be adjusted according to the adjusted CMOS gain at this time, so as to obtain the exposure parameters equal to the expected exposure value.
S312, according to the adjusted exposure parameters, the laser sensor continues to work in a normal exposure mode.
According to the exposure adjusting method provided by the embodiment of the invention, the laser sensor is adjusted according to the preset sequence of adjusting the exposure time, then adjusting the laser power and finally adjusting the gain of the CMOS module, one parameter is adjusted and then compared with the expected exposure value until the exposure parameter equal to the expected exposure value is adjusted, and the laser sensor is enabled to work normally in the normal exposure mode according to the adjusted exposure parameter. The laser parameters of the laser sensor are adjusted according to a preset sequence, so that the exposure parameters equal to the expected exposure value are obtained, the laser sensor is further adjusted rapidly and accurately, and the normal exposure can be restored to the next frame of the laser sensor.
Example two
Fig. 5 is a schematic structural diagram of a processing device according to an embodiment of the present invention, and referring to fig. 5, the processing device 40 includes a memory 402, a processor 401, and a computer program stored in the memory 402 and capable of running on the processor, where the processor 401 is electrically connected to the laser sensor, and the method in the above embodiment is implemented when the processor 401 executes the program. The processing device 40 shown in fig. 5 is merely an example and should not be construed as limiting the functionality and scope of use of embodiments of the present invention. As shown in fig. 5, the processing device 40 is in the form of a general purpose processing device. The components of the processing device 40 may include, but are not limited to: one or more processors 401, a system memory 402, and a bus 403 that connects the different system components (including the system memory 402 and the processor 401).
Bus 403 represents one or more of several types of bus structures, including a memory bus or memory controller, a peripheral bus, an accelerated graphics port, a processor, or a local bus using any of a variety of bus architectures. By way of example, and not limitation, such architectures include Industry Standard Architecture (ISA) bus, micro channel architecture (MAC) bus, enhanced ISA bus, video Electronics Standards Association (VESA) local bus, and Peripheral Component Interconnect (PCI) bus.
The system memory 402 may include computer system readable media in the form of volatile memory, such as Random Access Memory (RAM) 404 and/or cache memory 405. Processing device 40 may further include other removable/non-removable, volatile/nonvolatile computer system storage media. By way of example only, storage system 406 may be used to read from and write to non-removable, nonvolatile magnetic media (not shown in FIG. 5, commonly referred to as a "hard drive"). Although not shown in fig. 5, a magnetic disk drive for reading from and writing to a removable non-volatile magnetic disk (e.g., a "floppy disk"), and an optical disk drive for reading from or writing to a removable non-volatile optical disk (e.g., a CD-ROM, DVD-ROM, or other optical media) may be provided. In such cases, each drive may be coupled to bus 403 through one or more data medium interfaces. The system memory 402 may include at least one program product having a set (e.g., at least one) of program modules configured to carry out the functions of the embodiments of the invention.
A program/utility 408 having a set (at least one) of program modules 407 may be stored in, for example, system memory 402, such program modules 407 include, but are not limited to, an operating system, one or more application programs, other program modules, and program data, each or some combination of which may include an implementation of a network environment. Program modules 407 generally perform the functions and/or methods of the described embodiments of the invention.
The processing device 40 may also communicate with one or more external devices 409 (e.g., keyboard, pointing device, display 410, etc.), one or more devices that enable a user to interact with the device, and/or any devices (e.g., network card, modem, etc.) that enable the processing device 40 to communicate with one or more other computing devices. Such communication may occur through an input/output (I/O) interface 411. Also, processing device 40 may communicate with one or more networks such as a Local Area Network (LAN), a Wide Area Network (WAN) and/or a public network, such as the Internet, via network adapter 412. As shown in fig. 5, network adapter 412 communicates with other modules of processing device 40 over bus 403. It should be appreciated that although not shown, other hardware and/or software modules may be used in connection with processing device 40, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, data backup storage systems, and the like.
The processor 401 executes various functional applications and data processing by running programs stored in the system memory 402.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.

Claims (9)

1. An exposure adjustment method of a laser sensor, the laser sensor including a laser emission module and a CMOS module for receiving a laser signal reflected by a detected object, characterized in that the CMOS module includes a normal exposure mode and an HDR mode, the exposure adjustment method comprising:
acquiring an expected exposure value, wherein the expected exposure value is an exposure parameter required by normal operation of the laser sensor in a normal exposure mode;
adjusting the magnitude of at least one of the exposure parameters of the CMOS module according to the desired exposure value, the exposure parameters including exposure time, laser power, and gain of the CMOS module;
and according to the adjusted exposure parameters, the laser sensor continues to work in a normal exposure mode.
2. The exposure adjustment method of a laser sensor according to claim 1, wherein the desired exposure value satisfies: v=p×t×g;
wherein V is a desired exposure value, T is exposure time, P is laser power, and G is CMOS module gain.
3. The exposure adjustment method of a laser sensor according to claim 1, characterized by further comprising, before acquiring the desired exposure value:
acquiring a first peak value of the pixel quantity received by the CMOS module in an HDR mode;
and acquiring a second peak value of the pixel quantity received by the CMOS module in the normal exposure mode according to the first peak value.
4. The exposure adjustment method of a laser sensor according to claim 3, characterized by further comprising, before acquiring the first peak value of the pixel amount received by the CMOS module in the HDR mode:
judging whether the laser sensor is normally exposed;
if not, controlling the CMOS module to start an HDR mode.
5. The exposure adjustment method of a laser sensor according to claim 1, wherein adjusting the magnitude of the value of the at least one exposure parameter of the CMOS module according to the desired exposure value comprises:
and adjusting the value of the exposure parameter of the CMOS module according to the expected exposure value in a preset sequence, wherein the preset sequence is to firstly adjust the exposure time, then adjust the laser power and finally adjust the gain of the CMOS module.
6. The exposure adjustment method of a laser sensor according to claim 5, wherein the step of adjusting the magnitude of the exposure parameters of the CMOS module in a preset order according to the desired exposure value comprises:
adjusting the exposure time of the CMOS module according to the expected exposure value to obtain a first exposure value in a normal exposure mode;
judging whether the first exposure value is equal to the expected exposure value or not;
and if not, adjusting the laser power of the CMOS module according to the expected exposure value.
7. The method of claim 6, wherein the step of adjusting the laser power of the CMOS module according to the desired exposure value further comprises:
obtaining a second exposure value in a normal exposure mode according to the adjusted laser power;
judging whether the second exposure value is equal to the expected exposure value or not;
if not, the gain of the CMOS module is adjusted according to the expected exposure value.
8. The method of claim 7, wherein the step of adjusting the gain of the CMOS module according to the desired exposure value comprises:
obtaining a third exposure value in a normal exposure mode according to the gain of the adjusted CMOS module;
judging whether the third exposure value is equal to the expected exposure value or not;
if not, readjusting the exposure time and the laser power according to the gain of the CMOS module and the expected exposure value.
9. An electronic device, the electronic device comprising:
at least one processor and a laser sensor, the processor being electrically connected to the laser sensor; and
a memory communicatively coupled to the at least one processor; wherein,
the memory stores a computer program executable by the at least one processor to enable the at least one processor to perform the exposure adjustment method of the laser sensor according to any one of claims 1-8.
CN202311844582.7A 2023-12-28 2023-12-28 Exposure adjusting method and device for laser sensor Pending CN117805775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311844582.7A CN117805775A (en) 2023-12-28 2023-12-28 Exposure adjusting method and device for laser sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311844582.7A CN117805775A (en) 2023-12-28 2023-12-28 Exposure adjusting method and device for laser sensor

Publications (1)

Publication Number Publication Date
CN117805775A true CN117805775A (en) 2024-04-02

Family

ID=90427133

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311844582.7A Pending CN117805775A (en) 2023-12-28 2023-12-28 Exposure adjusting method and device for laser sensor

Country Status (1)

Country Link
CN (1) CN117805775A (en)

Similar Documents

Publication Publication Date Title
US20230120133A1 (en) Optical distance measurement system with dynamic exposure time
US20140253792A1 (en) Image capture apparatus and control method thereof
US20160234489A1 (en) Method for measuring performance parameters and detecting bad pixels of an infrared focal plane array module
US20140043506A1 (en) Method, apparatus and system providing adjustment of pixel defect map
CN102158654A (en) Image capture apparatus and zooming method
US11076108B2 (en) Image capturing apparatus and control method thereof
US8363042B2 (en) Photon transfer curve test time reduction
CN112689097B (en) Automatic brightness control method and system for line laser and storage medium
US11815394B2 (en) Photoelectric conversion device, method of controlling photoelectric conversion device, and information processing apparatus
US20240139907A1 (en) Information processing apparatus
US20110109750A1 (en) Method and apparatus for high dynamic range image measurement
JPS61217704A (en) Line width measuring device
CN117805775A (en) Exposure adjusting method and device for laser sensor
US10122948B2 (en) Solid-state image pickup element and image pickup apparatus
US11159778B2 (en) Imaging apparatus, method of processing image, and storage medium
US11336858B2 (en) Image capturing device and method that control an exposure period of a photon-counting type of an image sensor
US10715729B2 (en) Image processing apparatus for detecting moving subject, image processing method, and storage medium
CN107911676B (en) Focal length adjusting method and device for projection equipment
CN112866596A (en) Anti-intense-light three-dimensional capturing method and system based on CMOS sensor
JPH11111795A (en) Inspecting device for image-pickup element
US20240171873A1 (en) Apparatus and method for improving image quality in a dual conversion gain image sensor
TWI789127B (en) Image compensation circuit and method
US20240159902A1 (en) Distance measurement device, distance correction method, and non-transitory computer-readable storage medium
US20230254601A1 (en) Device, method, and storage medium
EP4287640A1 (en) Image processing apparatus, control method thereof, and computer program

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination