CN117805210A - High-density composite ion detection device based on vOECT array and preparation method - Google Patents
High-density composite ion detection device based on vOECT array and preparation method Download PDFInfo
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Abstract
The invention discloses a vOECT array-based high-density composite ion detection device and a preparation method thereof. The device comprises a vOECT array, an ion detection layer and an external circuit probe; the vOECT array consists of a substrate, a source electrode wire, a semiconductor layer, a drain electrode wire and a packaging layer and is used for detecting ion concentration and enhancing ion signals; the ion detection layer comprises an ion driving layer, an isolation layer, an ion selective membrane, liquid to be detected and a grid electrode, and is used for detecting the corresponding ion concentration and providing an ion detection signal source; the external circuit probe is used for connecting an external circuit. The solution of the invention realizes high-density composite multi-ion high-sensitivity high-selectivity detection, can be used for accurately monitoring the concentration of the corresponding ions in the liquid to be detected in real time, and has wide application prospect.
Description
Technical Field
The invention belongs to the technical field of electrochemical transistors, and particularly relates to a high-density composite ion detection device based on a vertical electrochemical transistor (vOECT) array and a preparation method thereof.
Background
The vertical electrochemical transistor (vertical ElOECTrochemical Transistor, vOECT) has the characteristics of simple preparation, low energy consumption, flexibility and the like, and is a bright new star in the novel electronic field at present. In addition, the vOECTs have excellent biocompatibility, which makes them very suitable for working inside the human body, and can be widely applied to biomedical tools such as implantable devices. More remarkably, by preparing vOECTs that are capable of achieving extremely small dimensions, with extremely high input sensitivity, they are endowed with the ability to detect weak signals, such as weak electrical signals generated by ion transfer in ionic solutions. This unique property makes vOECT have great application potential in a variety of fields such as biosensing, neuroscience and artificial skin.
A vOECT array is a micro-array of a plurality of vertical electrochemical transistors, each of which can be operated independently or driven in combination with other transistors to perform a predetermined function. The vOECT array has wide application in the fields of biosensors, ion concentration detection and the like. The key to the high density composite ion detector of the vOECT array is that the detector size should be small enough to be closely arranged in the array and accommodate a large number of sensors in a given area, and the working area should be refined within the high integration array to provide a wider variety of ion sensing areas. In addition, the external circuitry in the high density composite ion detection technique of the vOECT array is capable of independently driving each transistor within the array, which gives great flexibility in device control. At present, the ion concentration detection technology has the following problems that firstly, the ion detection precision by using a transistor is not enough, and the precision requirement (0.01 mmol/L) of the detection of the middle separator of the body fluid is difficult to meet; secondly, the traditional ion detection cost is high, the equipment cost is high, and the detection time is long; thirdly, the ion detection type has large limitation, and only one ion can be detected generally; fourth, the related ion detection means has poor stability, low redundancy and poor reliability. The high density composite ion detector based on the vOECT array is a very challenging and prospective field, which covers a plurality of subjects such as material science, electronic engineering and biomedicine. The research in the field not only can promote the progress of scientific technology, but also can lead to new application fronts, and shows infinite research and application prospects.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a high-density composite ion detection device based on a vOECT array and a preparation method thereof, which ensure that a single vOECT device has a short channel with a micron or below on one hand and further improve the time and space resolution of the vOECT array in ion concentration detection on the other hand. According to the high-density composite ion detection device and the preparation method based on the vOECT array, the effective working efficiency of devices in the vOECT array is successfully improved, and meanwhile, various ion detection is composited in one sensor, so that the requirement of high-precision detection on various ions can be met. In addition, the high-density composite ion detector of the vOECT array can effectively reduce energy consumption in the detection process, reduce heat release, realize higher transconductance and achieve better detection precision. The external circuit in the high-density composite ion detection device based on the vOECT array effectively avoids the circuit design of single driving and reading, and realizes accurate reading and monitoring of the signals of the appointed vOECT by utilizing the structural advantage; compared with the existing vOECT array ion detection technology, the method has the advantages of high precision, small area, low power consumption, flexible driving and high-precision signal amplification, and meets the test requirement based on the vOECT array.
In order to achieve the above object, the present invention provides a high-density composite ion detection device based on a vOECT array, the device comprising a vOECT array, an ion detection layer and an external circuit probe; the vOECT array consists of a substrate, a source electrode wire, a semiconductor layer, a drain electrode wire and a packaging layer and is used for detecting ion concentration and enhancing ion signals; the ion detection layer comprises an ion driving layer, an isolation layer, an ion selective membrane, liquid to be detected and a grid electrode, and is used for detecting the corresponding ion concentration and providing an ion detection signal source; the external circuit probe is used for connecting an external circuit;
a plurality of parallel strip-shaped source lines are arranged in the center of the substrate, a plurality of square semiconductors are uniformly distributed on each source line, and the width of each square semiconductor is larger than that of each source line; a plurality of parallel strip-shaped drain lines are arranged at the central position of the semiconductor layer, and the width of each drain line is smaller than that of the semiconductor layer; the drain electrode line and the source electrode line are perpendicular to each other; a packaging layer is arranged above the drain electrode wire, a square hole is formed in the central position of the drain electrode wire and the source electrode wire which are mutually perpendicular to each other in the packaging layer, and the cross overlapping area and the semiconductor area of the drain electrode wire and the source electrode wire are required to be exposed when the detection device is overlooked; an ion drive layer is arranged above the packaging layer, and the size of the ion drive layer is enough to cover the vOECT array and expose the tail end of the drain electrode wire electrode and the tail end of the source electrode wire electrode; an isolation layer is arranged on the ion drive layer, and the size of the isolation layer is enough to expose the tail end of the drain electrode wire electrode and the tail end of the source electrode wire electrode; the isolating layer divides the vOECT array into a plurality of working areas; the ion selective membranes are respectively prepared in the corresponding isolation areas; the liquid to be detected completely covers the vOECT array working area; setting a grid above the liquid to be detected, wherein the grid is contacted with the liquid to be detected; the external circuit probe is connected with the tail ends of the multiple drain lines, the tail ends of the multiple source lines and the grid electrode;
and applying voltage signals to the grid electrode and the drain electrode wire, and reacting corresponding ions in the liquid to be detected with corresponding ion selective membranes under the action of the grid electrode voltage and source-drain voltage between the drain electrode wire and the source electrode wire to force ions in the ion drive layer to permeate or separate out the inside of the semiconductor layer, so that the detection of the ion types and the concentration in the liquid to be detected is realized.
The invention also provides a preparation method of the high-density composite ion detection device based on the vOECT array, wherein in the preparation process, a substrate is prepared firstly in a vertical structure mode, and the substrate is cleaned and dried; sequentially preparing source lines on a substrate; preparing a semiconductor layer on the source line; preparing a drain line on the semiconductor layer; preparing a packaging layer on the drain electrode, and exposing the semiconductor layer positioned at the central position where the drain electrode line and the source electrode line are mutually perpendicular and crossed; preparing an ion drive layer on the packaging layer, covering the semiconductor layer and exposing the areas at the tail ends of the drain electrode wire electrode and the source electrode wire electrode; preparing an isolation layer on the ion drive layer to divide a working area; preparing an ion selective membrane on the isolation layer; dropwise adding a liquid to be detected on the ion selective membrane; preparing a grid connected with the liquid to be detected; finally, preparing an external circuit probe and connecting the external circuit probe with the vOECT array electrode.
The high-density composite ion detection device based on the vOECT array and the preparation method thereof have the following beneficial technical effects:
(1) The vertical structure device is adopted, the channel length can be controllably adjusted within the range of 100 nm-10 mu m, and various indexes of the transistor, such as current density, switching speed, capacitance and the like, can be adjusted according to the channel length;
(2) An organic semiconductor layer is adopted, ions in the electrolyte layer permeate or separate out of the semiconductor under the action of gate voltage, so that the concentration of carriers in the semiconductor is effectively controlled, and the conductivity of the semiconductor is changed;
(3) According to the invention, when the drain electrode line at the top of the array is prepared, the contact between the drain electrode and the source electrode can be effectively avoided, so that the short circuit of the device is avoided; meanwhile, the structure is suitable for various electrode preparation methods, including evaporation, sputtering and the like;
(4) The preparation method of the high-density composite ion detection device based on the vOECT array is compatible with a large-scale solution preparation method, and can effectively reduce preparation energy consumption and preparation cost; meanwhile, the device structure is compatible with the flexible stretchable substrate, so that stable device performance and signal output under the condition of extreme stress can be realized;
(5) The high-density composite ion detection device based on the vOECT array can detect and analyze the concentration of various ions at the micron scale at the same time, thereby having the capability of observing and analyzing human blood and waste liquid;
(6) The high-density composite ion detection device based on the vOECT array can increase the integration density of devices as much as possible under the condition of meeting the design of the devices, and can reach 27000 transistors/mm 2 The size of a single array can be expanded from 10×10 transistors to 100×100 and 1000×1000 transistors, so that the key indexes such as redundancy, service life and accuracy of the sensing technology are effectively improved;
(7) The high-density composite ion detection device based on the vOECT array can increase the range of detected ions as much as possible under the condition of meeting the design of devices, finely divide an ion selection area into single transistors in the array, and realize that each transistor correspondingly detects one ion, so that 27000 multiple objects to be detected can be detected in a very small area, and the detection efficiency is greatly improved;
(8) According to the high-density composite ion detection device based on the vOECT array, provided by the invention, different ions can be detected by changing the corresponding ion carriers in the ion selective membrane, so that the manufacturing and design cost is greatly reduced, and the preparation efficiency of the vOECT ion sensor is improved.
Drawings
FIG. 1 is a cross-sectional view of a high density composite ion detection device based on a vOECT array according to an embodiment of the present invention;
FIG. 2 is a layered structure diagram of a high-density composite ion detection device based on a vOECT array according to an embodiment of the present invention;
FIG. 3 is a graph of transfer characteristics of devices in an array provided by an embodiment of the present invention;
FIG. 4 is a graph showing the transfer characteristics of current at different potassium ion concentrations provided in an embodiment of the present invention;
FIG. 5 is a graph showing the transfer characteristics of current at different sodium ion concentrations provided in an embodiment of the present invention;
FIG. 6 is a graph showing the transfer characteristics of current at different calcium ion concentrations provided in the examples of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 is a cross-sectional view of a high-density composite ion detection device based on a vOECT array according to the present invention.
In this embodiment, there is provided a vertical reoct based on an organic semiconductor layer, as shown in fig. 1, a cross-sectional view of a detection device based on a reoct array, including: a substrate 1, a source line 2, a semiconductor layer 3, a drain line 4, a packaging layer 5, an ion drive layer 6, an isolation layer 7, an ion selective membrane 8, a liquid to be detected 9, a gate electrode 10 and an external circuit probe 11;
fig. 2 is a layered structure diagram of a high-density composite ion detection device based on a vOECT array.
A rectangular strip-shaped source line 2 is arranged at the midpoint of the substrate 1 shown in fig. 2 (a), as shown in fig. 2 (b); as shown in fig. 2 (c), square semiconductor layers 3 are uniformly distributed on the source lines 2, and the width of the semiconductor layers 3 is larger than that of the source lines 2; as shown in fig. 2 (d), a rectangular bar-shaped drain line 4 perpendicular to the source line 2 is provided at the central position of the semiconductor layer 3, the width of the drain line 4 is smaller than the width of the semiconductor layer 3, and the drain line 4 does not entirely cover or shield the semiconductor portion; as shown in fig. 2 (e), a package layer 5 is prepared on a substrate, and a square hole is formed at the center to expose a semiconductor layer at the center where drain lines and source lines cross perpendicularly; as shown in fig. 2 (f), an ion drive layer 6 is prepared above the encapsulation layer 5 to cover all the working areas of the reoct array; as shown in fig. 2 (g), an isolation layer 7 is prepared on the ion drive layer 6, and ion selective membranes 8 are prepared on four working areas partitioned by the isolation layer 7; as shown in fig. 2 (h), a liquid 9 to be detected is provided on the ion-selective membrane 8, and a gate electrode 10 is provided above the liquid 9 to be detected, the gate electrode 10 being in sufficient contact with the liquid 9 to be detected; as shown in fig. 2 (i), external circuit probes 11 are applied to the ends of the source line 2 and the drain line 4; and voltage signals are applied to the grid electrode 10 and the drain electrode line 2, and ions in the liquid to be detected 9 can drive ions in the ion driving layer to permeate into or separate out of the semiconductor layer under the action of the grid electrode voltage and source-drain voltage between the drain electrode line and the source electrode line, so that the ion concentration of the liquid to be detected on the surface of the vOECT array device is detected.
In the present embodiment, each of the intersecting overlapping regions of the drain line and the source lineThe domains constitute a single vOECT device with dimensions less than 10 μm by 10 μm, and an array area transistor density higher than 4,400/mm 2 Devices within each working area are capable of individually detecting one type of ion when performing ion concentration detection; the substrate is one of glass, a silicon chip, polyethylene terephthalate PET, polyethylene naphthalate PEN, polydimethylsiloxane PDMS or polyurethane PU.
In the embodiment, the width of the electrodes of the source line and the drain line ranges from 1 μm to 10 μm, the interval between the parallel source line and the drain line ranges from 1 μm to 10 μm, the source line and the drain line are specifically made of electrochemically stable conductive materials, and one of gold, platinum, carbon nanotubes or graphene is specifically selected; the grid electrode is made of a conductive material with electrochemical activity or without electrochemical activity, the conductive material with electrochemical activity is one of silver, silver/silver chloride and poly-3, 4-ethylenedioxythiophene, namely polystyrene sulfonate, and the conductive material without electrochemical activity is one of gold, carbon nano tube, graphene and graphite alkyne.
In this example, the semiconductor layer has a thickness of 10-200 nm and a length and width of 10 μm, and is made of a composite semiconductor material having both an ion conductor and a conductor, such as poly [ thiophene-bis (2- (2- (2-methoxyethoxy) ethoxy) -2,2 '-bithiophene ], poly [2, 5-bis (2,5,8,11,14-pentaoxa-16) -3, 6-bis (thiophene-2) -2, 5-dihydropyrrole (3, 4) pyrrole-1, 4-dione ], poly [ benzothiophene-bis (2- (2-methoxyethoxy) ethoxy) -2,2' -bithiophene ], poly (benzimidazole dibenzophenanthroline) or polyethylene glycol (glycol) diacrylate.
In this embodiment, the encapsulation layer is made of an electrochemically stable insulating material, and specifically is one of Parylene C (Parylene-C), cellulose, photoresist SU-8, polystyrene, polydimethylsiloxane PDMS, and polystyrene-ethylene-butylene SEBS.
In this embodiment, the ion driving layer is made of a high-efficiency ionic electrolyte material, and specifically one of poly (4-sodium styrene sulfonate), polyethylene dioxythiophene or polyaniline is selected.
In the embodiment, the isolating layer is made of an electrochemically stable hydrophobic material, and specifically one of photoresist SU-8, polydimethylsiloxane (PDMS), parylene C and cellulose is selected.
In the embodiment, the ion selective membrane is made of a material with specific recognition for specific ions, and specifically adopts a plurality of tetrahydrofuran, high molecular weight PVC, ionophore, bis (2-ethylhexyl) plasticizing solvent mediator and bis (2-ethylhexyl) plasticizing solvent; the ionophore is one of sodium ion, potassium ion and calcium ion.
In this embodiment, the solution to be detected is a solution similar to the body fluid of a human body, and the solution contains potassium ions, calcium ions, magnesium ions, sodium ions, phosphate ions, and the like.
In this embodiment, the external circuit interacts with all devices in the reoeCT array, where the interaction is to implement gating control and reading operation on any one reoeCT device by defining a combination of rows and columns, drive a single reoeCT device by applying gate and drain voltages, and acquire a readable voltage signal by source current collection and transconductance amplification; the external circuit also has the capability of configuring logic codes, and the combination of rows and columns can be flexibly set and adjusted according to different detection requirements so as to realize the gating control and the reading of a specific vOECT device and achieve the effect of vOECT array signal acquisition.
The following describes in detail an embodiment of a method for preparing a high-density composite ion detection device based on a vOECT array according to the present invention, which comprises the following steps:
(1) The substrate shown in fig. 2 (a) was ultrasonically cleaned with isopropyl alcohol for 15 minutes, and in this example, a silicon wafer was used as the substrate, and after the cleaning was completed, the substrate was subjected to ultraviolet ozone treatment for 15 minutes.
(2) Sequentially evaporating 3nm chromium and 150nm gold on the cleaned silicon wafer substrate as source lines, wherein the width of the source lines is 5 mu m, as shown in fig. 2 (b);
(3) Carrying out ultraviolet ozone cleaning treatment on the silicon wafer substrate evaporated with the electrode layer for about 10 minutes;
(4) Spin coating to prepare a semiconductor layer with a crosslinking function: the humidity is controlled below 10 percent, the spin coating rotating speed is 3000rpm, and the spin coating time is 10s; photoetching: performing an exposure treatment to crosslink the semiconductor film using 365nm ultraviolet light and washing away the uncrosslinked portion to form a semiconductor layer on the source electrode, as shown in fig. 2 (c);
(5) Preparing 150nm gold as a drain line on the semiconductor layer, the electrode width being 5 μm, as shown in FIG. 2 (d);
(6) Spin coating to prepare a packaging layer, and exposing the packaging layer by using 365nm ultraviolet light to expose a patterned channel, as shown in fig. 2 (e);
(7) Fabricating an ion drive layer exposing the drain line electrode tip and the source line electrode tip as shown in fig. 2 (f);
(9) Preparing an isolation layer, and isolating a vOECT array working area by using a hydrophobic material SU-8, as shown in fig. 2 (g);
(10) Respectively manufacturing ion selective membranes in the four separated working areas;
(11) About 10 μl of the liquid to be detected was dropped on the ion-selective membrane to be used as the electrolyte layer, and the gate electrode was connected through the liquid to be detected, as shown in fig. 2 (h);
(12) External circuit electrodes are applied to the ends of the source and drain lines as shown in fig. 2 (i).
So far, the preparation of the high-density composite ion detection device based on the vOECT array is successful.
Optionally, the source line, the drain line and the grid electrode are prepared by one of evaporation, magnetron sputtering, spraying, ink-jet printing, aerosol printing and screen printing. The semiconductor layer, the packaging layer and the electrolyte layer are prepared by one method of spin coating, screen printing, ink-jet printing, 3D printing, aerosol printing, electrofluidic printing or knife coating.
The following we used the prepared high density composite ion detection device based on the vOECT array to test the following conditions:
at constant drain voltage (V d = -0.1V) under a forward scan with a gate voltage in the range of 0V to +0.8vThe transfer characteristics of the individual device output currents in the vOECT array are captured and plotted as shown in FIG. 3. As can be seen from the graph results, under this test condition, the high-density composite ion detection device of the reoct array exhibited excellent current regulation effect. The source current (solid line) can be in the order of magnitude from 10 -8 A to 10 -2 The transfer characteristics of the A and the A are controllable, and the A has better consistency.
For cation detection, the ion concentration was measured at a constant drain voltage (V d The gate-source voltage was scanned forward from +0.1v to +0.8v, =0.1v), and transfer characteristics of the output current of the single device of the reoct in the whole column were captured, and transfer characteristics curves were plotted, as shown in fig. 4, 5, and 6, for different concentrations of potassium ion, sodium ion, and calcium ion, respectively. According to the graph results, under the test condition, the vOECT array-based high-density composite ion detection device shows excellent current regulation and control effect, the on-state current of the device rises along with the increase of the concentration of the corresponding ions, and the grid current is always kept at a lower level [ ]<10 -5 A)。
The solution of the invention realizes high-density composite multi-ion high-sensitivity high-selectivity detection, can be used for accurately monitoring the concentration of the corresponding ions in the liquid to be detected in real time, has wide application prospect, comprises the fields of function monitoring, biomedical research, drug screening, disease diagnosis and the like, provides innovative tools and methods for life health and clinical medical research, and is expected to have profound effects in the fields of electronic information, medicine and life science.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (10)
1. A high-density composite ion detection device based on a vertical electrochemical transistor vOECT array, which is characterized by comprising a vOECT array, an ion detection layer and an external circuit probe; the vOECT array consists of a substrate, a source electrode wire, a semiconductor layer, a drain electrode wire and a packaging layer and is used for detecting ion concentration and enhancing ion signals; the ion detection layer comprises an ion driving layer, an isolation layer, an ion selective membrane, liquid to be detected and a grid electrode, and is used for detecting the corresponding ion concentration and providing an ion detection signal source; the external circuit probe is used for connecting an external circuit;
a plurality of parallel strip-shaped source lines are arranged in the center of the substrate, a plurality of square semiconductors are uniformly distributed on each source line, and the width of each square semiconductor is larger than that of each source line; a plurality of parallel strip-shaped drain lines are arranged at the central position of the semiconductor layer, and the width of each drain line is smaller than that of the semiconductor layer; the drain electrode line and the source electrode line are perpendicular to each other; a packaging layer is arranged above the drain electrode wire, a square hole is formed in the central position of the drain electrode wire and the source electrode wire which are mutually perpendicular to each other in the packaging layer, and the cross overlapping area and the semiconductor area of the drain electrode wire and the source electrode wire are required to be exposed when the detection device is overlooked; an ion drive layer is arranged above the packaging layer, and the size of the ion drive layer is enough to cover the vOECT array and expose the tail end of the drain electrode wire electrode and the tail end of the source electrode wire electrode; an isolation layer is arranged on the ion drive layer, and the size of the isolation layer is enough to expose the tail end of the drain electrode wire electrode and the tail end of the source electrode wire electrode; the isolating layer divides the vOECT array into a plurality of working areas; the ion selective membranes are respectively prepared in the corresponding isolation areas; the liquid to be detected completely covers the vOECT array working area; setting a grid above the liquid to be detected, wherein the grid is contacted with the liquid to be detected; the external circuit probe is connected with the tail ends of the multiple drain lines, the tail ends of the multiple source lines and the grid electrode;
and applying voltage signals to the grid electrode and the drain electrode wire, and reacting corresponding ions in the liquid to be detected with corresponding ion selective membranes under the action of the grid electrode voltage and source-drain voltage between the drain electrode wire and the source electrode wire to force ions in the ion drive layer to permeate or separate out the inside of the semiconductor layer, so that the detection of the ion types and the concentration in the liquid to be detected is realized.
2. The vOECT array-based high density of claim 1The device is characterized in that each crossed and overlapped region of the drain electrode line and the source electrode line forms a single vOECT device, the size of the single vOECT device is smaller than 10 mu m multiplied by 10 mu m, and the transistor density of the array region is higher than 4,400/mm 2 Devices within each working area are capable of individually detecting one type of ion when performing ion concentration detection.
3. The device of claim 1, wherein the substrate is one of glass, silicon, polyethylene terephthalate PET, polyethylene naphthalate PEN, polydimethylsiloxane PDMS, or polyurethane PU.
4. The device of claim 1, wherein the source line and the drain line have an electrode width ranging from 1 to 10 μm, and the parallel source line or drain line has a spacing of 1 to 10 μm, and the source line and the drain line are made of one of gold, platinum, carbon nanotubes, and graphene; the grid electrode is one of gold, silver/silver chloride, poly 3, 4-ethylenedioxythiophene, polystyrene sulfonate, carbon nano tube, graphene and graphite alkyne.
5. The device for detecting high-density composite ions based on the vOECT array according to claim 1, wherein the thickness of the semiconductor layer is 10-200 nm, the length and width of the semiconductor layer are 10 μm, and the semiconductor layer is one of poly [ thiophene-bis (2- (2- (2-methoxyethoxy) ethoxy) -2,2 '-bithiophene ], poly [2, 5-bis (2,5,8,11,14-pentaoxa-16) -3, 6-bis (thiophene-2) -2, 5-dihydropyrrole (3, 4) pyrrole-1, 4-dione ], poly [ benzothiophene-bis (2- (2-methoxyethoxy) ethoxy) -2,2' -bithiophene ], poly (benzimidazole dibenzophenanthroline) or polyethylene glycol diacrylate.
6. The device of claim 1, wherein the encapsulation layer is one of Parylene C, cellulose, photoresist SU-8, polystyrene, polydimethylsiloxane PDMS, polystyrene-ethylene-butylene SEBS.
7. The device for detecting high-density composite ions based on a vOECT array according to claim 1, wherein the ion driving layer is one of poly (4-sodium styrene sulfonate), polyethylene dioxythiophene or polyaniline; the isolation layer is one of photoresist SU-8, polydimethylsiloxane (PDMS), parylene C and cellulose; the ion selective membrane is selected from a plurality of tetrahydrofuran, high molecular weight PVC, ionophore, bis (2-ethylhexyl) plasticizing solvent mediator and bis (2-ethylhexyl) plasticizing solvent; the ionophore is one of sodium ions, potassium ions and calcium ions; the liquid to be detected contains potassium ions, calcium ions, magnesium ions, sodium ions and phosphate ions.
8. The device of claim 1, wherein the external circuit interacts with all devices in the array by defining a combination of rows and columns to perform a gate control and read operation on any one of the vcect devices, driving a single vcect device by applying gate and drain voltages, and obtaining a readable voltage signal by source current collection and transconductance amplification.
9. The preparation method of the high-density composite ion detection device based on the vOECT array is characterized by comprising the following steps of:
step 1: preparing a substrate, cleaning the substrate and drying the substrate;
step 2: preparing a source line on a substrate;
step 3: preparing a semiconductor layer on the source line;
step 4: preparing a drain line on the semiconductor layer;
step 5: preparing a packaging layer on the drain electrode wire, and exposing the semiconductor layer positioned at the central position where the drain electrode wire and the source electrode wire are mutually perpendicular and crossed;
step 6: preparing an ion drive layer on the packaging layer, covering the semiconductor layer and exposing the areas at the tail ends of the drain electrode wire electrode and the source electrode wire electrode;
step 7: preparing an isolation layer on the ion drive layer to divide a working area;
step 8: preparing an ion selective membrane on the isolation layer;
step 9: dropwise adding a liquid to be detected on the ion selective membrane;
step 10: preparing a grid connected with the liquid to be detected;
step 11: external circuit probes were prepared and connected to the vOECT array electrodes.
10. The method for preparing the high-density composite ion detection device based on the vOECT array, according to claim 9, wherein the source line, the drain line and the grid electrode are prepared by one of evaporation, magnetron sputtering, spraying, ink-jet printing, aerosol printing, screen printing and laser engraving; the semiconductor layer, the packaging layer and the ion drive layer are prepared by one method of spin coating, spray coating, screen printing, ink jet printing, 3D printing, aerosol printing, electrofluidic printing or knife coating.
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