CN117801828A - Surfactant and application thereof - Google Patents
Surfactant and application thereof Download PDFInfo
- Publication number
- CN117801828A CN117801828A CN202311752594.7A CN202311752594A CN117801828A CN 117801828 A CN117801828 A CN 117801828A CN 202311752594 A CN202311752594 A CN 202311752594A CN 117801828 A CN117801828 A CN 117801828A
- Authority
- CN
- China
- Prior art keywords
- rapid
- reaction kettle
- surfactant
- hydrogen peroxide
- reaction vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004094 surface-active agent Substances 0.000 title claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 32
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 28
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 239000000654 additive Substances 0.000 claims description 13
- 230000000996 additive effect Effects 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical group O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 8
- 239000001509 sodium citrate Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000008139 complexing agent Substances 0.000 claims description 6
- 239000003381 stabilizer Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims description 3
- 229920001281 polyalkylene Polymers 0.000 claims description 3
- 229920000768 polyamine Polymers 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 239000003223 protective agent Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
- C09K23/10—Derivatives of low-molecular-weight sulfocarboxylic acids or sulfopolycarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention relates to a surfactant, the chemical structure of which is shown as a formula (I); the rapid etchant containing surfactant of the present invention can exhibit a surface tension of 26.3dyn/cm-26.5dyn/cm at 25-30 ℃ to rapidly enter a line spacing of 800/800 nm; compared with the traditional etching solution, the rapid etching solution has low cost, can effectively reduce the use amount of copper materials by about 50 percent, and can not generate ammonia gas or chlorine gas.
Description
Technical Field
The invention relates to the technical field of circuit board surface treatment, in particular to a surfactant and application thereof.
Background
In the circuit board industry, there are currently two etching systems: an alkaline etching system and an acidic etching system; the alkaline etching system uses ammonium chloride and ammonia water to carry out etching after pattern electroplating, and the acid etching system uses salt water and hydrogen peroxide or only perchloric acid. However, both of these etching systems have problems in that, first, they have a slow etching rate and are prone to side etching, thereby affecting the accuracy of manufacturing precision lines; secondly, the surface tension of the etching solution is too large to be applied to nano-scale production; in addition, the alkaline etching system generates ammonia gas, and the acidic etching system generates chlorine gas, which has adverse effects on the environment; finally, both of these etching systems require a certain level of copper to etch.
Thus, there is a need for a surfactant and its use.
Disclosure of Invention
The invention aims at overcoming the defects in the prior art and provides a surfactant and application thereof.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
in a first aspect of the present invention, there is provided a surfactant having a chemical structure represented by formula (I):
a second aspect of the present invention provides a rapid etch additive comprising: a surfactant as hereinbefore described.
Preferably, the method further comprises: a protective agent, a metal complexing agent and a hydrogen peroxide stabilizer.
Preferably, the metal complexing agent is sodium citrate.
Preferably, the hydrogen peroxide stabilizer is polyethylene polyamine polyalkylene phosphonate.
In a third aspect of the present invention, there is provided a method for preparing a rapid etchant, comprising the steps of:
adding pure water into a reaction kettle, sequentially adding sulfuric acid, hydrogen peroxide, sodium citrate and the rapid etching additive as described above, and adding pure water to the liquid level of the reaction kettle; stirring, standing and filtering to obtain the rapid etching agent.
Preferably, after pure water is added to the reaction kettle until the pure water accounts for 20% of the volume fraction of the reaction kettle, sulfuric acid, hydrogen peroxide, sodium citrate and the rapid etching additive are sequentially added.
Preferably, the sulfuric acid is added to the reaction kettle in an amount of 40% by volume of the reaction kettle.
Preferably, the hydrogen peroxide is added to the reaction kettle, and the material in the reaction kettle accounts for 60% of the volume fraction of the reaction kettle.
Preferably, the addition of the rapid etch additive as described above to the reactor is 61% by volume of the reactor.
A fourth aspect of the invention provides a rapid etchant prepared by the method of preparation as described above.
Compared with the prior art, the invention has the following technical effects:
the rapid etchant containing surfactant of the present invention can exhibit a surface tension of 26.3dyn/cm-26.5dyn/cm at 25-30 ℃ to rapidly enter a line spacing of 800/800 nm; compared with the traditional etching solution, the rapid etching solution has low cost, can effectively reduce the use amount of copper materials by about 50 percent, and can not generate ammonia gas or chlorine gas.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
The invention will be further illustrated, but is not limited, by the following examples.
Example 1
The embodiment provides a rapid etching agent and a preparation method thereof, wherein the preparation method comprises the following steps:
adding pure water into a reaction kettle until the pure water accounts for 20% of the volume fraction of the reaction kettle, sequentially adding sulfuric acid into the reaction kettle until the material in the reaction kettle accounts for 40% of the volume fraction of the reaction kettle, hydrogen peroxide into the reaction kettle until the material in the reaction kettle accounts for 60% of the volume fraction of the reaction kettle, 15g of sodium citrate, and the rapid etching additive into the reaction kettle until the material in the reaction kettle accounts for 61% of the volume fraction of the reaction kettle as described above, and adding pure water to the liquid level of the reaction kettle; stirring, standing and filtering to obtain the rapid etching agent; wherein,
the rapid etch additive includes: a protective agent, a metal complexing agent, a hydrogen peroxide stabilizer and a surfactant;
wherein the metal complexing agent is sodium citrate;
wherein the hydrogen peroxide stabilizer is polyethylene polyamine polyalkylene phosphonate;
the chemical structure of the surfactant is shown as a formula (I):
example 2
This embodiment provides for the use of a rapid etchant as described in example 1, comprising the steps of:
s1, providing a circuit board hard board, a circuit board soft board or an OLED;
s2, film stripping;
s3, treating by using the rapid etchant as in the embodiment 1;
s4, washing with water;
s5, drying;
wherein treating with the rapid etchant as described in example 1 comprises: treating for 30s-50s at 20-30 ℃ by adopting 150-250 mL/L of the rapid etchant in a soaking or spraying mode, wherein the waste recovered nickel is not lower than 10g/L.
In a preferred embodiment, treating with a rapid etchant as described in example 1 comprises: the rapid etchant was treated with 200mL/L for 45s at 25 ℃.
Example 3
This example provides a metal nickel layer thickness test after application as described in example 2, with the results shown in the small table:
| rapid etch temperature (DEG C) | Time to rapid etch(s) | Thickness of metallic nickel layer (mum) |
| 30 | 10 | 0.5 |
| 30 | 20 | 1 |
| 30 | 30 | 1.5 |
| 30 | 40 | 2 |
| 30 | 50 | 2.5 |
In summary, the fast etchant of the present invention containing surfactant can exhibit a surface tension of 26.3dyn/cm-26.5dyn/cm at 25-30 ℃ to rapidly enter a line spacing of 800/800 nm; compared with the traditional etching solution, the rapid etching solution has low cost, can effectively reduce the use amount of copper materials by about 50 percent, and can not generate ammonia gas or chlorine gas.
The foregoing description is only illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, and it will be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the teachings of the present invention, which are intended to be included within the scope of the invention.
Claims (11)
1. A surfactant, which is characterized in that the chemical structure of the surfactant is shown as a formula (I):
2. a rapid etch additive comprising: the surfactant of claim 1.
3. The rapid etch additive of claim 2, further comprising: a protective agent, a metal complexing agent and a hydrogen peroxide stabilizer.
4. A rapid etch additive according to claim 3, wherein the metal complexing agent is sodium citrate.
5. A rapid etch additive according to claim 3, wherein the hydrogen peroxide stabilizer is a polyethylene polyamine polyalkylene phosphonate.
6. A method for preparing a rapid etchant, comprising the steps of:
adding pure water into a reaction kettle, sequentially adding sulfuric acid, hydrogen peroxide, sodium citrate and the rapid etching additive according to any one of claims 2-5, and adding pure water to the liquid level of the reaction kettle; stirring, standing and filtering to obtain the rapid etching agent.
7. The method according to claim 6, wherein sulfuric acid, hydrogen peroxide, sodium citrate, and the rapid etching additive according to any one of claims 2 to 5 are sequentially added after pure water is added to the reaction vessel until the pure water accounts for 20% of the volume fraction of the reaction vessel.
8. The method according to claim 6 or 7, wherein the amount of sulfuric acid added to the reaction vessel is 40% by volume of the reaction vessel.
9. The preparation method according to claim 6 or 7, wherein the hydrogen peroxide is added to the reaction kettle so that the material in the reaction kettle accounts for 60% of the volume fraction of the reaction kettle.
10. The method of claim 6 or 7, wherein the addition of the rapid etch additive of any one of claims 2-5 to the reaction vessel comprises 61% by volume of the reaction vessel.
11. A rapid etchant prepared by the preparation method according to any one of claims 6 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311752594.7A CN117801828A (en) | 2023-12-19 | 2023-12-19 | Surfactant and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311752594.7A CN117801828A (en) | 2023-12-19 | 2023-12-19 | Surfactant and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117801828A true CN117801828A (en) | 2024-04-02 |
Family
ID=90419086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311752594.7A Pending CN117801828A (en) | 2023-12-19 | 2023-12-19 | Surfactant and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117801828A (en) |
-
2023
- 2023-12-19 CN CN202311752594.7A patent/CN117801828A/en active Pending
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| SE01 | Entry into force of request for substantive examination | ||
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