CN117795049A

CN117795049A - Composition for removing edge bead from metal-containing resist and method for forming pattern

Info

Publication number: CN117795049A
Application number: CN202280055024.XA
Authority: CN
Inventors: 文炯朗; 李旻映; 许伦旼; 具滋旼; 李东炯; 韩多顺; 金旼秀; 金宰贤
Original assignee: Samsung SDI Co Ltd
Current assignee: Samsung SDI Co Ltd
Priority date: 2021-08-10
Filing date: 2022-07-04
Publication date: 2024-03-29

Abstract

A composition for removing edge beads from a metal-containing resist and a method of forming a pattern are provided, the method comprising the step of removing edge beads using the composition, and the composition comprising an organic solvent and a compound having AlogP3 of greater than or equal to 30 square angstroms.

Description

Composition for removing edge bead from metal-containing resist and method for forming pattern

Technical Field

The present disclosure relates to a composition for removing edge beads (edge beads) from a metal-containing resist and a method of forming a pattern, the method comprising the step of removing the edge beads using the composition.

Background

In recent years, the semiconductor industry has been accompanied by a continual decrease in critical dimensions (critical dimension), and such a decrease in dimensions requires new high performance photoresist materials and patterning methods that meet the demands for processing and patterning smaller and smaller features (features).

In addition, with the recent rapid development of the semiconductor industry, a semiconductor device is required to have an operation speed and a large memory capacity, and according to such a requirement, a process technology for improving the integration, reliability and response speed of the semiconductor device is being developed. Specifically, it is important to accurately control/implant impurities in the working regions of the silicon substrate and interconnect these regions to form devices and ultra-high density integrated circuits, which can be achieved by a photolithography process (photolithographic process). In other words, it is important to integrate the photolithography process including the following operations: a photoresist is coated on a substrate, selectively exposed to Ultraviolet (UV), including extreme ultraviolet (extreme ultraviolet, EUV), electron Beam (E-Beam), X-ray, or the like, and then developed.

Specifically, in a process of forming a photoresist layer, a resist is coated on a substrate mainly while rotating the silicon substrate, wherein the resist is coated on the edge and rear surface of the substrate, which may cause an indentation (or pattern defect) in a subsequent semiconductor process such as an etching process and an ion implantation process. Thus, a process of stripping and removing photoresist coated on the edge and rear surface of the silicon substrate using the thinner composition (thinner composition), i.e., a bead removal (edge bead removal, EBR) process, is performed. The EBR process requires a composition that exhibits excellent solubility (solubility) to photoresist and effectively removes beads and photoresist remaining in the substrate without generating resist residues.

Disclosure of Invention

[ technical problem ]

One embodiment provides a composition for removing edge beads from a metal-containing resist.

Another embodiment provides a method of forming a pattern, the method comprising the step of removing edge beads using the composition.

[ means of technology ]

A composition for removing edge beads from a metal-containing resist according to one embodiment includes an organic solvent and a photoresist composition having a surface roughness of greater than or equal to 30 square angstromsAlogP3 compound of (a).

AlogP3 is a value calculated according to the material science suite (Materials Science Suite, MSS) simulation program for the sum of the surface areas of atoms of-0.2 square angstroms ∈alogp ∈0.0 square angstroms among the atoms included in the compound.

AlogP3 may be 30 square angstroms. Ltoreq. AlogP 3. Ltoreq.200 square angstroms.

The compound having AlogP3 of 30 square angstroms or more may include catechol (pyrocatechol), vinylphosphonic acid (vinylphosphonic acid), 4-chlorocatechol (4-chlorocatechol), glycolic acid (glycine), 4-methylcatechol (4-methyl catechol), and,Phenolic ketone (tropolone), oxalic acid (oxalic acid), 4-nitrocatechol (4-nitrocatechol), hinokitiol (hinokitiol), acetohydroxamic acid (acetohydroxamic acid), butylphosphonic acid (butylphosphonic acid), or combinations thereof.

The composition for removing edge beads from a metal-containing resist may include 50 to 99.99 wt% of the organic solvent; and 0.01 to 50 wt% of the compound having AlogP3 of greater than or equal to 30 square angstroms.

The metal compound included in the metal-containing resist may include at least one of an alkyl tin side oxygen group (alkyl tin oxo group) and an alkyl tin carboxyl group (alkyl tin carboxyl group).

The metal compound contained in the metal-containing resist may be represented by chemical formula 1.

[ chemical formula 1]

In the chemical formula 1, the chemical formula is shown in the drawing,

R ¹ selected from the group consisting of substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C6 to C30 aralkyl, and R ^a -O-R ^b (wherein R is ^a Is a substituted or unsubstituted C1 to C20 alkylene group, and R ^b A substituted or unsubstituted C1 to C20 alkyl group),

R ² to R ⁴ Each independently selected from-OR ^c or-OC (=o) R ^d ，

R ^c Is a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and

R ^d is hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or a combination thereof.

A method of forming a pattern according to another embodiment includes: coating a metal-containing resist composition on a substrate; coating the aforementioned composition for removing edge beads from the metal-containing resist along the edge of the substrate; drying and heating the coated resultant to form a metal-containing resist film on the substrate; and exposing and developing the dried and heated resultant to form a resist pattern.

The method of forming a pattern may further include: after exposure and development, the aforementioned composition for removing edge beads from the metal-containing resist is applied along the edges of the substrate.

[ advantageous effects ]

The composition for removing edge beads from a metal-containing resist according to one embodiment reduces metal-based contamination inherent in metal-containing resists and removes resist coated on the edge and back surfaces of the substrate, thereby meeting the need to process and pattern smaller features.

Drawings

Fig. 1 is a schematic view of a photoresist coating apparatus.

[ description of the marks ]

1 substrate supporting portion

2 nozzle

10 Photoresist solution

12 side bead

Detailed Description

Hereinafter, embodiments of the present invention are described in detail with reference to the accompanying drawings. In the following description of the present disclosure, well-known functions or constructions will not be described in detail for the purpose of illustrating the present disclosure.

For purposes of clarity of illustration of the present disclosure, the descriptions and relationships are omitted, and the same or similar configuration elements are denoted by the same reference numerals throughout the disclosure. Further, the present disclosure is not necessarily limited thereto, as the size and thickness of each configuration shown in the drawings is arbitrarily shown for better understanding and ease of illustration.

In the drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. In the drawings, the thickness of a portion of a layer or region, etc., is exaggerated for clarity. It will be understood that when an element (e.g., a layer, film, region, or substrate) is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.

In the present disclosure, "substituted" means that a hydrogen atom is replaced with deuterium, halogen, hydroxy, amino, substituted or unsubstituted C1 to C30 amino, nitro, substituted or unsubstituted C1 to C40 silyl, C1 to C30 alkyl, C1 to C10 haloalkyl, C1 to C10 alkylsilyl, C3 to C30 cycloalkyl, C6 to C30 aryl, C1 to C20 alkoxy, or cyano. "unsubstituted" means that a hydrogen atom remains as a hydrogen atom and is not replaced by another substituent.

In the present disclosure, the term "alkyl" means a straight or branched chain aliphatic hydrocarbon group unless otherwise defined. An alkyl group may be a "saturated alkyl group" that does not contain any double or triple bonds.

The alkyl group may be a C1 to C20 alkyl group. More specifically, the alkyl group may be a C1 to C10 alkyl group or a C1 to C6 alkyl group. For example, C1 to C4 alkyl means that the alkyl chain contains 1 to 4 carbon atoms and may be selected from methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, second butyl and third butyl.

Specific examples of alkyl groups include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tertiary butyl, pentyl, hexyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and the like.

In the present disclosure, when the definition is not otherwise provided, the term "cycloalkyl" refers to a monovalent cyclic aliphatic hydrocarbon group.

In the present disclosure, when the definition is not otherwise provided, the term "alkenyl" is a straight or branched chain aliphatic hydrocarbon group and refers to an aliphatic unsaturated alkenyl group containing one or more double bonds.

In the present disclosure, when the definition is not otherwise provided, the term "alkynyl" is a straight or branched chain aliphatic hydrocarbon group and refers to an unsaturated alkynyl group containing one or more triple bonds.

In the present disclosure, "aryl" means a substituent in which all elements of a cyclic substituent have a p-orbital (p-orbital) and the p-orbitals form a conjugate and can include single or multiple ring fused (i.e., rings sharing pairs of adjacent carbon atoms) functional groups.

Fig. 1 is a schematic view of a photoresist coating apparatus.

Referring to fig. 1, a substrate supporting portion 1 on which a substrate W is placed is provided, and the substrate supporting portion 1 includes a spin chuck or spin coater.

The substrate supporting portion 1 rotates in a first direction at a predetermined rotation speed and provides centrifugal force to the substrate W. A nozzle (spray nozzle) 2 is provided on the substrate support part 1, and the nozzle 2 is located in an atmospheric pressure region (atm area) offset from an upper part of the substrate W and moves to the upper part of the substrate during the solution supply step to spray the photoresist solution 10. Thus, the photoresist solution 10 is coated on the surface of the substrate by centrifugal force. At this time, the photoresist solution 10 supplied to the center of the substrate W is coated while being diffused to the edge of the substrate W by centrifugal force, and a portion thereof moves to the side surface of the substrate and the lower surface of the edge of the substrate.

That is, in the coating process, the photoresist solution 10 is mainly coated by a spin coating method (spin coating method). By supplying a predetermined amount of viscous photoresist solution 10 to the center of the substrate W, it gradually diffuses toward the edge of the substrate by centrifugal force.

Therefore, the thickness of the photoresist is formed to be uniform (flat) by the rotation speed of the substrate supporting portion.

However, as the solvent evaporates, the viscosity gradually increases, and a relatively large amount of photoresist accumulates on the edge of the substrate under the effect of the surface tension. More seriously, the photoresist accumulates to the lower surface of the edge of the substrate, which is referred to as edge bead 12.

Hereinafter, a composition for removing edge beads from a metal-containing resist according to one embodiment is set forth.

The composition for removing edge beads from a metal-containing resist according to one embodiment of the present invention includes an organic solvent and a compound having AlogP3 of 30 square angstroms or more.

AlogP3 refers to a value calculated according to the MSS simulation program for the sum of the surface areas of atoms of-0.2 square angstroms ∈alogp ∈0.0 square angstroms among the atoms contained in the compound.

AlogP is a literature value (value) for quantifying the degree of hydrophilicity/hydrophobicity of atoms, wherein hydrophobicity increases as AlogP increases toward positive values, and hydrophilicity increases as AlogP decreases toward negative values.

Specifically, -0.2 square angstroms +_algp +.0.0 square angstroms means relatively weak hydrophilicity with reference to AlogP being 0 (which is regarded as neutral), and in this regard AlogP3 means a degree of contribution of atoms having-0.2 square angstroms +.ltoreq.algp +.0 square angstroms among atoms constituting the compound and thus having weak hydrophilicity to hydrophilicity of the molecular surface of the compound.

According to one embodiment, compounds having AlogP3 of 30 square angstroms or more become weakly hydrophilic in an organic solvent and thus easily coordinate to a metal (e.g., sn) of a metal-containing resist, thereby helping to reduce the residual amount of Sn.

However, when AlogP3 is less than 30 square angstroms, since the compound coordinates to Sn, the effect of reducing the residual amount of Sn may be deteriorated, and thus, alogP3 may be desired to be greater than or equal to a specific limit value 30.

Specifically, alogP3 may be in the range of 30 square angstroms +.alogp 3 +.180 square angstroms, and more specifically, in the range of 30 square angstroms +.alogp 3 +.150 square angstroms. Within the above range, the residual amount of Sn can be reduced, and at the same time, the compound can have an appropriate solubility in an organic solvent.

On the other hand, alogP used to calculate AlogP3 is a known literature value and is set forth below in journal A of Physics and chemistry (J.Phys.chem.A) & lt 1998, 102, 3762-3772.

AlogP formula is

logP＝∑ _i n _i a _i ，

Wherein n is _i Is the number of atoms of type i, and a _i Is the atomic log P contribution (atomic log Pcontribution).

AlogP is obtained by using a _i The logP is calculated as a hydrophobicity constant defined by gaussian-criping-veswananadhan (Ghose-Crippen-Viswanadhan).

In addition, alogP3 may be calculated using an MSS simulation program, an

In the present invention, the MSS simulation program is a Material Science Suite (MSS) manufactured by Xue Dingge company (Schrodinger Inc.), and uses an Autoqusa module.

Alo with greater than or equal to 30 square angstromsSaid compound of gP3 may comprise catechol, vinylphosphonic acid, 4-chlorocatechol, glycolic acid, 4-methylcatechol,Phenol ketone, oxalic acid, 4-nitrocatechol, hinokitiol, acetohydroxamic acid, butylphosphonic acid, or combinations thereof, but are not limited thereto.

In exemplary embodiments, the composition for removing edge beads from a metal-containing resist may include 50 to 99.99 wt% of the organic solvent and 0.01 to 50 wt% of the aforementioned compound having AlogP3 of greater than or equal to 30 square angstroms.

In a specific embodiment, the composition for removing edge beads from a metal-containing resist may comprise the aforementioned compound having AlogP3 of greater than or equal to 30 square angstroms in an amount of 0.05 wt% to 40 wt% (specifically, 0.5 wt% to 30 wt%, or more specifically, 1 wt% to 20 wt%).

According to one embodiment, the organic solvent included in the composition for removing edge beads from the metal-containing resist may be, for example, propylene glycol methyl ether (propylene glycol methyl ether, PGME), propylene glycol methyl ether acetate (propylene glycol methyl ether acetate, PGMEA), propylene glycol butyl ether (propylene glycol butyl ether, PGBE), ethylene glycol methyl ether, diethyl glycol ethyl methyl ether, dipropylene glycol dimethyl ether, ethanol, 2-butoxyethanol, N-propanol, isopropanol, N-butanol, isobutanol, hexanol, ethylene glycol, propylene glycol, heptanone, propylene carbonate, butylene carbonate, diethyl ether, dibutyl ether, ethyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, diisoamyl ether, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, tetrahydrofuran, dimethyl sulfoxide, dimethylformamide, acetonitrile, diacetone alcohol, 3-dimethyl-2-pyrrolidone, N-methyl-2-pyrrolidone, dimethylacetamide, cyclohexanone, methyl-2-hydroxy-2-methylpropionate (HBM), γ -butyrolactone (gamma butyrolactone), GBL), 1-butanol (N-butanol), ethyl Lactate (EL), diene Butyl Ether (DBE), diisopropyl ether (diisopropyl ether, DIAE), acetylacetone, 4-methyl-2-pentenol (or called methyl isobutyl carbinol (methyl isobutyl carbinol, MIBC)), 1-methoxy-2-propanol, 1-ethoxy-2-propanol, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, 2-hydroxyethyl propionate, 2-hydroxy-2-methylethyl propionate, ethyl ethoxyacetate, ethyl glycolate, 2-hydroxy-3-methylbutyrate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl pyruvate (methyl pyruvate), ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate (n-butyl lactate), methyl 2-hydroxyisobutyrate (methyl-2-hydroxy-isobutyrate), methoxyphenyl, n-butyl acetate, propyl 1-methoxy-2-acetate, methoxyethoxypropionate, ethoxyethoxypropionate, or mixtures thereof, but are not limited thereto.

The composition for removing edge beads from a metal-containing resist according to the present invention is particularly effective in removing metal-containing resist, more specifically, removing undesirable metal residues such as tin-based metal residues.

The metal compound included in the metal-containing resist may include at least one of an alkyl tin pendant oxy group and an alkyl tin carboxyl group.

For example, the metal compound included in the metal-containing resist may be represented by chemical formula 1.

[ chemical formula 1]

In the chemical formula 1, the chemical formula is shown in the drawing,

R ² to R ⁴ Each independently selected from-OR ^c or-OC (=o) R ^d ，

Meanwhile, according to another embodiment, a method of forming a pattern includes the step of removing edge beads using the aforementioned composition for removing edge beads from a metal-containing resist. For example, the pattern fabricated may be a photoresist pattern. More specifically, it may be a negative photoresist pattern (negative-type photoresist pattern).

The method of forming a pattern according to one embodiment includes: coating a metal-containing resist composition on a substrate; coating the aforementioned composition for removing edge beads from the metal-containing resist along the edge of the substrate; drying and heating the coated resultant to form a metal-containing resist film on the substrate; and exposing and developing the dried and heated resultant to form a resist pattern.

More specifically, forming a pattern using the metal-containing resist composition may include: coating a metal-containing resist composition on a substrate on which a thin film is formed by spin coating, slit coating, inkjet printing, or the like; and drying the coated metal-containing resist composition to form a photoresist film. The metal-containing resist composition can include a tin-based compound, which can include at least one of an alkyl tin pendant oxy group and an alkyl tin carboxyl group, for example.

Subsequently, a step of coating the aforementioned composition for removing the edge bead from the metal-containing resist may be carried out, and more specifically, the aforementioned composition for removing the edge bead from the metal-containing resist may be coated along the edge of the substrate while rotating the substrate at a suitable speed (e.g., 500 revolutions per minute (revolutions per minute, rpm) or more than 500 revolutions per minute).

Subsequently, a first heat treatment process of heating the substrate on which the photoresist film is formed is performed. The first heat treatment process may be performed at a temperature of about 80 ℃ to about 120 ℃, and in such a process, the solvent is evaporated, and the photoresist film may be more firmly bonded to the substrate.

And the photoresist film is selectively exposed.

Examples of light that can be used in the exposure process may include, for example, not only light having a short wavelength such as i-line (wavelength 365 nm), krF excimer laser (wavelength 248 nm), arF excimer laser (wavelength 193 nm), but also EUV (light having a high energy wavelength such as EUV (extreme ultraviolet, wavelength 13.5 nm), E-Beam (electron Beam), and the like.

More specifically, the light for exposure according to one embodiment may be short wavelength light having a wavelength range of about 5 nm to about 150 nm and light having a high energy wavelength such as EUV (extreme ultraviolet, wavelength 13.5 nm), E-Beam (electron Beam), or the like.

In the step of forming the photoresist pattern, a negative pattern may be formed.

The exposed areas of the photoresist film have a solubility that is different from the solubility of the unexposed areas of the photoresist film because the polymer is formed by a crosslinking reaction (e.g., condensation between organometallic compounds).

Then, a second thermal treatment process is performed on the substrate. The second thermal treatment process may be performed at a temperature of about 90 ℃ to about 200 ℃. By performing the second thermal treatment process, the exposed areas of the photoresist film become difficult to dissolve in the developing solution.

Specifically, a photoresist pattern corresponding to the negative tone image (negative tone image) can be completed by dissolving and removing the photoresist film corresponding to the unexposed region using an organic solvent (e.g., 2-heptanone).

The developing solution used in the method of forming a pattern according to the embodiment may be an organic solvent, for example, ketones (e.g., methyl ethyl ketone, acetone, cyclohexanone, or 2-heptanone), alcohols (e.g., 4-methyl-2-propanol, 1-butanol, isopropanol, 1-propanol, or methanol), esters (e.g., propylene glycol monomethyl ether acetate, ethyl lactate, n-butyl acetate, or butyrolactone), aromatic compounds (e.g., benzene, xylene, or toluene), or a combination thereof.

In addition, the method of forming a pattern may further comprise coating the composition for removing edge beads from the metal-containing resist after exposure and development. In particular, the method may include coating a suitable amount of the composition for removing edge beads from the metal-containing resist along an edge of the substrate while rotating the substrate at a suitable speed (e.g., 500 revolutions per minute or greater than 500 revolutions per minute).

As described above, a photoresist pattern formed by exposing not only light having a wavelength such as i-line (wavelength 365 nm), krF excimer laser (wavelength 248 nm), arF excimer laser (wavelength 193 nm) but also EUV (extreme ultraviolet; wavelength 13.5 nm), and also light having high energy such as E-Beam (electron Beam) may have a thickness width (thickness width) of about 5 nm to about 100 nm. For example, the photoresist pattern may be formed to have a thickness width of 5 nm to 90 nm, 5 nm to 80 nm, 5 nm to 70 nm, 5 nm to 60 nm, 5 nm to 50 nm, 5 nm to 40 nm, 5 nm to 30 nm, or 5 nm to 20 nm.

In another aspect, the photoresist pattern may have a half pitch (half-pitch) of a pitch (pitch) of less than or equal to about 50 nanometers, such as less than or equal to 40 nanometers, such as less than or equal to 30 nanometers, such as less than or equal to 20 nanometers, such as less than or equal to 15 nanometers, and the photoresist pattern may have a line width roughness (line width roughness) of less than or equal to about 10 nanometers, less than or equal to about 5 nanometers, less than or equal to about 3 nanometers, or less than or equal to about 2 nanometers.

Mode for the invention

Hereinafter, the present invention will be described in more detail by way of examples related to the preparation of the aforementioned composition for removing edge beads from metal-containing resists. However, technical features of the present invention are not limited by the following examples.

Preparation example: preparation of organometallic-containing photoresist compositions

The organometallic compound having the structure of chemical formula C was dissolved in 4-methyl-2-pentanol at a concentration of 1 wt% and then filtered through a 0.1 μm Polytetrafluoroethylene (PTFE) syringe filter, thereby obtaining a photoresist composition.

[ chemical formula C ]

Evaluation: residual amount of tin (Sn)

1.0 ml of the photoresist composition according to the preparation example was placed on a 4-inch silicon wafer, left to stand for 20 seconds, and spin-coated at a speed of 1,500 rpm for 30 seconds. 6.5 ml of each of the compositions for removing edge beads according to examples 1 to 11 and comparative examples 1 to 5 set forth in table 1 was added along the edge of the wafer on which the coating film was formed, spin-coating was performed for 3 seconds, and drying was performed for 25 seconds while rotating at a speed of 1,500 rpm. The process of adding the composition for removing the edge bead, spin coating and drying was repeated three times. Then, the resultant was baked at 150℃for 60 seconds, and the Sn amount was confirmed by analysis by vapor phase decomposition inductively coupled plasma mass spectrometry (Vapour Phase Decomposition Inductively Coupled Plasma-Mass spectrometry, VPD ICP-MS).

(Table 1)

Referring to table 1, the compositions for removing edge beads from metal-containing resists according to examples 1 to 11 exhibited more improved metal removal effect and further promoted reduction of residual metals than the compositions for removing edge beads from metal-containing resists according to comparative examples 1 to 5.

In the foregoing, certain embodiments of the present invention have been described and illustrated, however, it will be apparent to those skilled in the art that the invention is not limited to the embodiments described, and that various modifications and alterations can be made without departing from the spirit and scope of the invention. Therefore, the modified or altered embodiments themselves may not be understood separately from the technical idea and embodiments of the present invention, and the modified embodiments are within the scope of the claims of the present invention.

Claims

1. A composition for removing edge beads from a metal-containing resist comprising:

an organic solvent; and

a compound having a molecular weight greater than or equal toIs not limited to AlogP3 of (C),

wherein the AlogP3 is directed to the atoms contained in the compound according to a material science suite simulation programA value calculated from the sum of the surface areas of atoms.

2. The composition of claim 1, wherein

The AlogP3 is

3. The composition of claim 1, wherein

Having a value greater than or equal toComprises catechol, vinylphosphonic acid, 4-chlorocatechol, glycolic acid, 4-methylcatechol,/-m>Phenol ketone, oxalic acid, 4-nitrocatechol, hinokitiol, acetohydroxamic acid, butyl phosphonic acid, or combinations thereof.

4. The composition of claim 1, wherein

The composition comprises 50 to 99.99 wt% of the organic solvent; and 0.01 to 50 wt% of a polymer having a weight ratio of greater than or equal toIs a compound of AlogP 3.

5. The composition of claim 1, wherein

The metal compound included in the metal-containing resist includes at least one of an alkyl tin pendant oxy group and an alkyl tin carboxyl group.

6. The composition of claim 1, wherein

The metal compound contained in the metal-containing resist is represented by chemical formula 1:

[ chemical formula 1]

Wherein, in the chemical formula 1,

R ¹ selected from substituted or unsubstitutedSubstituted C1-C20 alkyl, substituted or unsubstituted C3-C20 cycloalkyl, substituted or unsubstituted C2-C20 alkenyl, substituted or unsubstituted C2-C20 alkynyl, substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted C6-C30 aralkyl, and R ^a -O-R ^b Wherein R is ^a Is a substituted or unsubstituted C1 to C20 alkylene group, and R ^b Is a substituted or unsubstituted C1 to C20 alkyl group,

R ² to R ⁴ Each independently selected from-OR ^c or-OC (=o) R ^d ，

7. A method of forming a pattern, comprising:

coating a metal-containing resist composition on a substrate;

coating the composition for removing edge beads from the metal-containing resist according to any one of claims 1 to 6 along an edge of the substrate;

drying and heating the coated resultant to form a metal-containing resist film on the substrate; and

the dried and heated resultant is exposed and developed to form a resist pattern.

8. The method of claim 7, wherein

After exposure and development, the composition for removing the edge bead from the metal-containing resist is again coated along the edge of the substrate.