CN117790324A - Direct-insert type mixed integrated circuit metal packaging shell and manufacturing method thereof - Google Patents

Direct-insert type mixed integrated circuit metal packaging shell and manufacturing method thereof Download PDF

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Publication number
CN117790324A
CN117790324A CN202311812198.9A CN202311812198A CN117790324A CN 117790324 A CN117790324 A CN 117790324A CN 202311812198 A CN202311812198 A CN 202311812198A CN 117790324 A CN117790324 A CN 117790324A
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China
Prior art keywords
integrated circuit
hybrid integrated
box body
manufacturing
metal
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CN202311812198.9A
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Chinese (zh)
Inventor
李刚
孙志明
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Wuhan Honggang Electronic Technology Co ltd
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Wuhan Honggang Electronic Technology Co ltd
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Priority to CN202311812198.9A priority Critical patent/CN117790324A/en
Publication of CN117790324A publication Critical patent/CN117790324A/en
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Abstract

The application provides a direct-insert type hybrid integrated circuit metal packaging shell and a manufacturing method thereof, and relates to the field of manufacturing of military hybrid integrated circuit shells. And (3) processing a step hole on the bottom plate of the metal box body, processing an inner hole on one surface of the bottom plate far away from the opening, and processing a step outer hole on one surface of the bottom plate close to the opening. The direct-insert type hybrid integrated circuit metal packaging shell is manufactured by adopting the method. The design of the step hole enables the direct-insert type hybrid integrated circuit metal packaging shell not to contact the graphite clamp when in fusion sealing, the surface of the glass insulator does not have clamp marks and graphite ash, only one fusion sealing is needed, the production efficiency is greatly improved, the performance of the glass insulator is improved, and the stability of the insulation resistance of the direct-insert type hybrid integrated circuit metal packaging shell is improved.

Description

Direct-insert type mixed integrated circuit metal packaging shell and manufacturing method thereof
Technical Field
The application relates to the field of manufacturing of military hybrid integrated circuit shells, in particular to a direct-insert hybrid integrated circuit metal packaging shell and a manufacturing method thereof.
Background
The direct-insertion type metal shell is widely applied to the military power industry, and the requirement on the metal packaging shell in the military industry is high. The direct-insert type metal shell needs to be produced and tested according to the requirement specification in GJB2440A-2006 hybrid integrated circuit shell general specification, and the general sealing process of the metal package shell is as follows: firstly, nickel pre-plating treatment is carried out on the metal shell, first inspection is carried out on the nickel layer, after the metal shell and the glass blank which are qualified in the first inspection are respectively assembled with a graphite clamp, first fusion sealing is carried out at 950 ℃, the metal shell and the glass blank are sealed by pressure, and the appearance of the product after the first fusion sealing is subjected to second inspection by a 10x microscope.
The graphite clamp is used for supporting the glass blanks in the first fusing, and clamp marks and graphite ash can exist on the surfaces of all glass insulators after the first fusing, so that the requirements of GJB2440A-2006 general Specification for hybrid integrated circuit shells cannot be met. The glass insulator is required to be cleaned and dried, and the glass hole clearance clamp is used for carrying out secondary fusion sealing on the metal packaging shell to solve the problems of clamp printing and graphite ash adhesion. After the second time of sealing, the metal packaging shell is also required to be inspected for the third time so as to ensure that the metal packaging shell meets the requirements. The production efficiency is lowered due to the twice sealing, and the production delivery is affected; and the pressure resistance, insulation and air tightness of the glass insulator can be reduced by one order of magnitude after the glass insulator is repeatedly sealed for more than 2 times, and the reliability of the metal package shell is influenced.
Most of sintering clamps in the sealing industry are made of graphite temperature-resistant materials, and because the graphite clamps and polar distance molds are repeatedly used for long time, graphite on the surfaces of the clamps and polar distance molds is loose, when a metal shell and a glass blank are in a high-temperature area, the glass blank is in a softened state, loose graphite is easy to adhere to the surface of the glass blank, and when a metal packaging shell is electroplated subsequently, the graphite on the surface of a glass insulator is plated with a nickel layer due to the fact that the graphite is conductive, so that the conduction distance between a lead wire and the metal shell is reduced, a nickel layer bridging phenomenon is formed, the insulation resistance of the metal packaging shell is unstable, and even a short circuit phenomenon is caused.
In view of the above related art, the inventors believe that the two-time sealing of the metal package case results in low production efficiency and reduced performance of the glass insulator; the graphite fixture is in direct contact with the glass preform, which results in unstable insulation resistance of the metal packaging shell.
Disclosure of Invention
In order to overcome the defects of low production efficiency, reduced glass insulator performance and unstable metal insulation resistance caused by twice sealing of the metal packaging shell, the application provides a manufacturing method of the in-line hybrid integrated circuit metal packaging shell.
In a first aspect, the present application provides a method for manufacturing a metal package housing of an in-line hybrid integrated circuit, which adopts the following technical scheme:
a manufacturing method of an in-line hybrid integrated circuit metal packaging shell comprises the following steps:
step hole processing is carried out on a bottom plate of the metal box body, and an inner hole is processed on one surface of the bottom plate far away from the opening; an outer hole is processed on one surface of the bottom plate close to the opening, and the diameter of the outer hole is larger than that of the inner hole;
nickel plating treatment is carried out on the metal box body;
assembling the metal box body on a first graphite clamp, assembling a glass blank and a lead wire on the metal box body and the first graphite clamp respectively, and assembling a second graphite clamp into the metal box body;
placing the metal box body into a sintering furnace for sealing treatment;
removing the first graphite jig and the second graphite jig from the metal box body;
and carrying out secondary electroplating treatment on the metal box body.
Further, the nickel plating treatment is followed by a first inspection of the metal case, the first inspection being used to detect the quality of the metal case and nickel layer.
And further, performing a second test on the in-line hybrid integrated circuit metal packaging shell after the second electroplating treatment, wherein the second test is used for detecting whether the in-line hybrid integrated circuit metal packaging shell meets the requirement.
Still further, the second electroplating process includes:
performing secondary nickel plating on the metal box body, wherein the thickness of a nickel layer is 3-8.9 mu m;
and (3) gold-plating the lead, wherein the thickness of the gold-plating layer is 1.3-5.7 mu m.
Further, the design method of the step hole comprises the following steps:
determining the depth, diameter and welding wall thickness dimension parameters of the step hole according to the actual glass blank size;
and (3) designing the minimum distance between the step holes, wherein the welding wall thickness is required to be larger than 0.5mm.
Further, the step hole processing further includes: chamfering is carried out on the edge of the step hole, and the chamfering is carried out at 0.05mm multiplied by 45 ℃.
Further, the inner wall of the stepped hole is smooth, and the roughness of the inner wall of the stepped hole is not more than 3.2 mu m.
Further, the nickel layer has a thickness of 6 μm to 8 μm.
Further, a T-shaped cutter is adopted in the process of machining the outer hole.
In a second aspect, the present application provides a metal packaging case of an in-line hybrid integrated circuit, which adopts the following technical scheme:
the direct-insert type mixed integrated circuit metal packaging shell is manufactured by using the manufacturing method of the direct-insert type mixed integrated circuit metal packaging shell.
Through adopting above-mentioned technical scheme, the design in step hole makes direct-insert type hybrid integrated circuit metal packaging shell not contact graphite anchor clamps when fusing seal, and glass insulator surface does not have anchor clamps seal and graphite ash, only need carry out once and fuse seal, has improved production efficiency greatly, has improved glass insulator's performance, has increased direct-insert type hybrid integrated circuit metal packaging shell insulation resistance's stability.
Drawings
Fig. 1 is a schematic process flow diagram of a method for manufacturing an in-line hybrid integrated circuit metal package housing in an embodiment of the application.
Fig. 2 is a schematic structural view of a stepped hole in an embodiment of the present application.
Reference numerals illustrate: 1. a metal case; 11. a step hole; 12. an outer aperture; 13. an inner bore; 2. a glass blank; 3. and (5) a lead wire.
Detailed Description
The present application is described in further detail below in conjunction with fig. 1 and 2.
The embodiment of the application discloses a manufacturing method of a direct-insert type hybrid integrated circuit metal packaging shell. Referring to fig. 1, the method for manufacturing the in-line hybrid integrated circuit metal package case includes: step hole 11 processing, nickel plating treatment, first inspection, assembly, sealing treatment, disassembly, second electroplating treatment and second inspection.
The metal box body 1 is made of 10# steel, and is annealed after being rough machined. After annealing, finish machining such as machining the stepped hole 11 is performed.
The bottom plate of the metal box body 1 is provided with a step hole 11, an inner hole 13 is processed on one surface of the bottom plate far away from the opening, and the inner hole 13 can be processed into a through hole during processing. An outer hole 12 is processed on one surface of the bottom plate close to the opening, the diameter of the outer hole 12 is larger than that of the inner hole 13, and the outer hole 12 and the inner hole 13 are coaxially arranged. In this embodiment of the application, the diameter difference between the inner hole 13 and the outer hole 12 is 0.2mm, that is, the wall thickness of the step hole 11 is 0.1mm, through multiple analysis experiments, the wall thickness of the step hole 11 of 0.1mm is the wall thickness with the best effect in the limited experiment of this embodiment, when the wall thickness of the step hole 11 is too small, the supporting effect of the step hole 11 on the glass blank 2 is limited, the glass blank 2 drops to contact with the graphite fixture during the fusion sealing, thereby causing the fixture mark and graphite ash on the surface of the glass insulator, the glass insulator needs to be cleaned and dried and then is subjected to secondary fusion sealing on the metal package shell of the direct-insert hybrid integrated circuit, the insulation property, the pressure resistance, the air tightness and other performances of the glass insulator can be reduced through the fusion sealing for more than two times, the manufacturing process of the metal package shell of the direct-insert hybrid integrated circuit is increased through multiple fusion sealing, and the production efficiency is reduced.
The insulation voltage resistance value between the lead 3 and the metal box body 1 is directly related to the minimum distance between the lead 3 and the metal box body 1, and the smaller the minimum distance between the lead 3 and the metal box body 1 is, the poorer the insulation voltage resistance effect is; the larger the minimum distance from the lead 3 to the metal case 1 is, the better the insulation and withstand voltage effect is. When the wall thickness of the step hole 11 is overlarge, the minimum distance from the lead 3 to the metal box body 1 is reduced, the insulation and pressure resistance effect of the direct-insert type hybrid integrated circuit metal packaging shell is poor, and when the wall thickness of the step hole 11 is increased to a certain value, the insulation and pressure resistance of the direct-insert type hybrid integrated circuit metal packaging shell does not meet the requirements of GJB2440A-2006 hybrid integrated circuit shell general specification.
The diameters of the inner hole 13 and the outer hole 12 are designed according to the size of the glass blank 2, so that the outer hole 12 is slightly larger than the glass blank 2, and the inner hole 13 is slightly smaller than the glass blank 2. There is a small gap between the outer hole 12 and the glass blank 2 so that the glass blank 2 can be fitted into the metal box 1. When the sealing treatment is carried out, the glass embryo 2 is softened at the high temperature of 950 ℃, the softened glass can be tightly contacted with the metal box body 1, and the metal box body 1 can shrink more than the glass when the sealing is cooled, so that the glass insulator and the metal box body 1 form tight connection.
The inner hole 13 is slightly smaller than the glass blank 2 to support the glass blank 2, so that the glass blank 2 cannot fall onto the graphite jig due to the influence of gravity in the fusion sealing process, the surface of the glass insulator is provided with jig marks and graphite ash, the direct-insert type hybrid integrated circuit metal packaging shell is required to be subjected to secondary fusion sealing, the glass insulator can be subjected to the fusion sealing for more than two times, the insulating property, the pressure resistance, the air tightness and the like of the glass insulator are reduced, and the production efficiency is greatly reduced due to the secondary fusion sealing.
The inner wall surface of the stepped hole 11 is required to be smooth, the inner surface of the stepped hole 11 cannot be provided with a thread processing knife mark, and the roughness of the inner wall surface of the stepped hole 11 is not more than 3.2 mu m.
When the stepped hole 11 is machined, since the wall thickness of the stepped hole 11 is small, there are problems such as cutting deformation and burring of the metal case 1 at the stepped hole 11 due to cutting force during machining, and in order to avoid the above problems, the inner hole 13 is machined on the side of the bottom plate far from the opening, and then the outer hole 12 is machined on the side of the bottom plate near the opening by using a T-shaped cutter. The process route can improve the yield of one-time machining.
After the outer hole 12 and the inner hole 13 are machined, chamfering is performed on the edge of the step hole 11 in order to avoid the phenomena of flanging burrs and the like on the periphery of the step hole 11 after the direct-insert type hybrid integrated circuit metal package shell is machined. The burring may cause injury to the user and may damage parts contacting the burring. The chamfering treatment can also keep the best appearance form after the glass blank 2 and the metal box body 1 are sealed.
In the embodiment of the present application, since the wall thickness of the stepped hole 11 is only 0.1mm, the chamfer width is selected to be 0.05mm, and the chamfer angle is 45 ℃. If the width and angle of the chamfer are too small, the chamfer still forms flanging burrs after the direct-insert type hybrid integrated circuit metal packaging shell is processed. If the width and angle of the chamfer angle are too large, the difficulty of the processing technology is also increased. In particular, when the inner hole 13 is chamfered near the end of the outer hole 12, if the chamfer width and angle are too large, the inner hole 13 cannot provide enough supporting force for the glass blank 2, and the glass blank 2 is likely to fall down and contact the graphite jig during the fusion sealing process. In other embodiments, the width and angle of the chamfer can be changed according to the wall thickness of the stepped hole 11, so that the use requirement and the national standard can be met.
After the metal case 1 has completed the step hole 11 processing, the metal case 1 is subjected to a nickel plating process. Firstly, removing impurities such as oxides and greasy dirt on the surface of a metal box body 1, activating the metal box body 1 by using a specified chemical solution, increasing the activity of the surface of the metal box body 1, immersing the metal box body 1 in another specified chemical solution, and depositing a nickel layer on the surface of the metal box body 1 in an electroplating mode. The thickness of the nickel layer is 6-8 mu m. The nickel plating treatment is carried out on the surface of the metal box body 1, so that the surface of the metal box body 1 can be effectively protected from oxidation and corrosion.
After the nickel plating treatment, the first inspection is carried out on the metal box body 1, wherein the first inspection comprises visual inspection and detection of the thickness and quality of the nickel layer, the visual inspection is used for detecting whether the surface of the metal box body 1 has mechanical damage, impurities and the like, the surface of the nickel layer cannot have bubbles and the like, and the thickness of the nickel layer needs to reach 6-8 mu m. Carrying out secondary processing on the metal box body 1 which is unqualified in the first inspection until the surface is free from mechanical damage, impurities and the like; if the first inspection of the nickel layer is failed, nickel plating treatment is needed again until the nickel layer is qualified.
And assembling the metal box body 1 which is qualified in the first inspection onto a first graphite fixture, wherein a first lead mounting hole is formed in the first graphite fixture, the lead 3 is aligned to the first lead mounting hole and is inserted into the metal box body 1 and the first graphite fixture, and the glass blank 2 is assembled onto the metal box body 1. The assembly sequence of the glass preform 2 and the lead 3 is interchangeable, and is not limited herein. A second graphite jig is fitted into the metal case 1. The first graphite jig supports the metal case 1, and the first graphite jig is not in contact with the glass preform 2 due to the stepped hole 11. The second graphite anchor clamps are equipped with the second lead wire mounting hole, and second graphite anchor clamps still are equipped with the clearance hole in second lead wire mounting hole department, and the existence of clearance hole makes glass embryo 2 and second graphite anchor clamps can not take place to contact to avoid glass insulator surface to have graphite anchor clamps seal and graphite ash.
And placing the assembled metal box body 1 into a sintering furnace for fusion sealing treatment, and sintering the glass blanks 2 into glass insulators after the fusion sealing treatment, wherein the glass insulators are tightly connected with the metal box body 1 and the leads 3. The metal box body 1, the lead 3 and the glass blank 2 are preheated during the fusion sealing treatment, and sintered at 950 ℃ after certain preheating, and the glass blank is softened at 950 ℃ and has certain fluidity, so that the glass blank can flow onto the metal box body 1 and the lead 3, but the glass cannot fall onto the first graphite fixture from the metal box body 1 due to fluidity. After high temperature sintering, cooling treatment is carried out, and the expansion coefficient of the glass is different from that of the 10# steel, so that the shrinkage of the 10# steel is larger than that of the glass during cooling treatment, and the metal box body 1 can be tightly connected with the glass insulator. The lead 3 adopts 4J50 alloy, the expansion coefficient of 4J50 is different from that of glass, and the shrinkage of 4J50 alloy is larger than that of glass during cooling treatment, so that the lead 3 made of 4J50 material can form tight connection with the glass insulator.
And taking the metal box body 1 out of the sintering furnace, and removing the first graphite clamp and the second graphite clamp from the metal box body 1.
The metal case 1 is subjected to a second plating process including a second nickel plating process and a gold plating process. The surface of the metal box body 1 after the fusion sealing is subjected to secondary nickel plating treatment, namely composite plating treatment, the secondary nickel plating treatment can buffer the internal stress of the nickel layer, increase the binding force of the nickel layer, improve the corrosion resistance and wear resistance of the metal box body 1, and decorate the outer surface of the metal box body 1. After the second nickel plating, the total nickel layer thickness is 3-8.9 μm.
The lead 3 is gold-plated, and the thickness of the gold-plated layer is 1.3 μm to 5.7 μm. The gold plating of the lead 3 can increase the oxidation resistance of the lead 3, increase the service life of the lead 3, and prevent poor contact of the lead 3 due to long-time use of the lead 3.
And after the second electroplating treatment, performing a second test on the direct-insert type hybrid integrated circuit metal packaging shell, wherein the second test is a finished product test of the direct-insert type hybrid integrated circuit metal packaging shell and is used for detecting whether all data of the direct-insert type hybrid integrated circuit metal packaging shell meet the national standard specifications.
The design method of the step holes 11 comprises the steps of determining the dimension parameters and the minimum spacing design of the step holes 11. The depth, diameter and welding wall thickness dimension parameters of the step hole 11 are determined according to the actual size of the glass blank 2, and the glass blank 2 needs to be basically leveled with the step hole 11 and cannot exceed the step hole 11. The diameter of the outer hole 12 of the step hole 11 is slightly larger than that of the glass blank 2, and the diameter of the inner hole 13 is slightly smaller than that of the glass blank 2. The step holes 11 are designed at minimum intervals, the welding wall thickness is required to be larger than 0.5mm, and the welding wall thickness is the thickness of the glass insulator in the direction of the lead 3 after the welding treatment, and is slightly larger than the depth of the outer hole 12. When the step holes 11 are designed at the minimum distance, the depth of the outer holes 12 is required to be larger than 0.5mm, if the thickness of the welding wall is too small, the strength of the glass insulator is lower than the use requirement, the glass insulator is easy to crack, and the structural strength of the direct-insert type hybrid integrated circuit metal package shell is also reduced.
The implementation principle of the metal packaging shell of the direct-insert type hybrid integrated circuit in the embodiment of the application is as follows: the step hole 11 is designed on the bottom plate of the metal box body 1, and the design of the step hole 11 enables the direct-insert type hybrid integrated circuit metal packaging shell not to contact with the graphite clamp when in fusion sealing, the surface of the glass insulator does not have clamp marks and graphite ash, only one fusion sealing is needed, the production efficiency is greatly improved, the performance of the glass insulator is improved, and the stability of the insulation resistance of the direct-insert type hybrid integrated circuit metal packaging shell is increased.
The foregoing are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in any way, therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.

Claims (10)

1. The manufacturing method of the in-line hybrid integrated circuit metal packaging shell is characterized by comprising the following steps of:
machining a step hole (11) on a bottom plate of the metal box body (1), and machining an inner hole (13) on one surface of the bottom plate far away from the opening; an outer hole (12) is processed on one surface of the bottom plate close to the opening, and the diameter of the outer hole (12) is larger than that of the inner hole (13);
nickel plating treatment is carried out on the metal box body (1);
assembling the metal box body (1) onto a first graphite fixture, assembling a glass blank (2) and a lead (3) onto the metal box body (1) and the first graphite fixture respectively, and assembling a second graphite fixture into the metal box body (1);
placing the metal box body (1) into a sintering furnace for sealing treatment;
removing the first graphite jig and the second graphite jig from the metal box body (1);
and carrying out secondary electroplating treatment on the metal box body (1).
2. The method of manufacturing an in-line hybrid integrated circuit metal package according to claim 1, wherein the nickel plating process is followed by a first inspection of the metal case (1), the first inspection being used to detect the quality of the metal case (1) and nickel layer.
3. The method of manufacturing an in-line hybrid integrated circuit metal package according to claim 2, wherein the in-line hybrid integrated circuit metal package is inspected a second time after the second electroplating process, the second time inspection being used to detect whether the in-line hybrid integrated circuit metal package meets the requirements.
4. The method of manufacturing an in-line hybrid integrated circuit metal package according to claim 3, wherein the second electroplating process comprises:
performing secondary nickel plating on the metal box body (1), wherein the thickness of a nickel layer is 3-8.9 mu m;
the lead (3) is gold-plated, and the thickness of the gold-plated layer is 1.3-5.7 mu m.
5. The method of manufacturing an in-line hybrid integrated circuit metal package case according to claim 4, wherein the step hole (11) design method comprises:
determining the depth, diameter and welding wall thickness dimension parameters of the step hole (11) according to the size of the actual glass blank (2);
and (3) carrying out minimum distance design on the step holes (11), wherein the welding wall thickness is required to be larger than 0.5mm.
6. The method for manufacturing an in-line hybrid integrated circuit metal package according to claim 5, wherein the step hole (11) processing further comprises: chamfering is performed on the edge of the step hole (11), wherein the chamfering is 0.05mm multiplied by 45 ℃.
7. The method for manufacturing the in-line hybrid integrated circuit metal package case according to claim 6, wherein the inner wall of the step hole (11) is smooth, and the roughness of the inner wall of the step hole (11) is not more than 3.2 μm.
8. The method of manufacturing an in-line hybrid integrated circuit metal package according to claim 7, wherein the nickel layer has a thickness of 6 μm to 8 μm.
9. The method of manufacturing an in-line hybrid integrated circuit metal package according to claim 8, wherein the outer hole (12) is machined using a T-knife.
10. An in-line hybrid integrated circuit metal package using the method of manufacturing an in-line hybrid integrated circuit metal package as recited in any one of claims 1-9.
CN202311812198.9A 2023-12-25 2023-12-25 Direct-insert type mixed integrated circuit metal packaging shell and manufacturing method thereof Pending CN117790324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311812198.9A CN117790324A (en) 2023-12-25 2023-12-25 Direct-insert type mixed integrated circuit metal packaging shell and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311812198.9A CN117790324A (en) 2023-12-25 2023-12-25 Direct-insert type mixed integrated circuit metal packaging shell and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN117790324A true CN117790324A (en) 2024-03-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311812198.9A Pending CN117790324A (en) 2023-12-25 2023-12-25 Direct-insert type mixed integrated circuit metal packaging shell and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN117790324A (en)

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