CN117778967A - Process chamber and semiconductor process equipment - Google Patents

Abstract

The application discloses a process chamber and semiconductor process equipment, wherein the process chamber comprises a chamber body, a lining piece and a bearing device; the inner cavity of the chamber body is divided into a sputtering space and a transmission space by the lining piece, the chamber body is provided with a sheet conveying port and an extraction port, the sheet conveying port is communicated with the transmission space, and the lining piece is provided with a ventilation channel; the bearing device is arranged in the transmission space in a lifting manner and comprises a bearing table and a first corrugated pipe, two ends of the first corrugated pipe are respectively connected with the bottom wall of the chamber body and the bearing table surface in a sealing manner to one side of the bottom wall of the chamber body, and the first corrugated pipe is communicated with the air extraction opening; under the condition that the bearing table rises to the process position, one end of the first corrugated pipe facing the bearing table is in sealing connection with the lining piece, the sputtering space is communicated with the inner space of the first corrugated pipe through the ventilation channel, and the sheet conveying port is separated from the inner space of the first corrugated pipe. The scheme can solve the problem of low process efficiency of the process chamber.

Description

Process chamber and semiconductor process equipment

Technical Field

The present disclosure relates to semiconductor chip technology, and more particularly, to a process chamber and a semiconductor processing apparatus.

Background

Physical vapor deposition techniques are widely used in the semiconductor manufacturing field, including vacuum evaporation, sputter coating, molecular beam epitaxy, etc., wherein sputter coating is widely used in metal thin film processes. The basic principle of sputtering film plating is that under the high vacuum environment, process gas is led in, voltage is applied to two ends of an electrode to make the gas produce glow discharge, positive ions in the plasma impact the target material under the action of a strong electric field, and metal atoms of the target material are sputtered to deposit on the surface of a wafer.

In the related art, a lining member is arranged in a process chamber, the lining member defines a sputtering space, a space except the sputtering space in the process chamber is a transmission space, a wafer is subjected to a film plating process in the sputtering space, a ventilation channel is arranged between a shielding member and a cover ring in the lining member and used for communicating the sputtering space and the transmission space, byproducts in the process are discharged into the transmission space through the ventilation channel and then pumped out by a vacuum pump communicated with the transmission space.

The transmission space is communicated with a wafer conveying port of the process chamber, in a specific wafer conveying process, the carrying device of the process chamber descends into the transmission space, a valve of the wafer conveying port is opened, and then wafers are conveyed onto the carrying device through the mechanical arm. The manipulator extends out of the sheet conveying port and then closes the valve. Finally, the wafer is conveyed into the sputtering space through the bearing device.

However, in the process of transferring the wafer, the valve of the wafer transfer port needs to be opened and closed once, and the valve of the wafer transfer port needs to be opened and closed for a long time, so that the wafer transfer efficiency of the process chamber is reduced, thereby affecting the process efficiency of the process chamber.

Disclosure of Invention

The application discloses a process chamber and semiconductor process equipment, which are used for solving the problem of lower process efficiency of the process chamber.

In order to solve the problems, the application adopts the following technical scheme:

in a first aspect, embodiments of the present application provide a process chamber for use in semiconductor processing equipment, the process chamber comprising a chamber body, a liner, and a carrier;

the inner cavity of the chamber body is divided into a sputtering space and a transmission space by the lining piece, the chamber body is provided with a sheet conveying port and an extraction port, the sheet conveying port is communicated with the transmission space, and the lining piece is provided with a ventilation channel;

the bearing device is arranged in the transmission space in a lifting manner and comprises a bearing table and a first corrugated pipe, two ends of the first corrugated pipe are respectively connected with the bottom wall of the chamber body and one side, facing the bottom wall of the chamber body, of the bearing table in a sealing manner, and the first corrugated pipe is communicated with the air extraction opening;

Under the condition that the bearing table ascends to a process position, one end of the first corrugated pipe, which faces the bearing table, is in sealing connection with the lining piece, the sputtering space is communicated with the inner space of the first corrugated pipe through the ventilation channel, and the sheet conveying port is separated from the inner space of the first corrugated pipe;

under the condition that the bearing table descends to a sheet conveying position, one end of the first corrugated pipe, which faces the bearing table, is separated from the lining piece, and the sheet conveying opening is communicated with the inner space of the first corrugated pipe.

In a second aspect, an embodiment of the present application provides a semiconductor process apparatus, including a transfer chamber and the foregoing process chamber, where the transfer chamber is communicated with the transfer space through the transfer port.

The technical scheme that this application adopted can reach following beneficial effect:

in the process chamber disclosed by the application, under the condition that the bearing table is at a process position, one end of the first corrugated pipe, which faces the bearing table, is in sealing connection with the lining piece. At this time, a sealed space is formed in the first bellows, that is, when the end of the first bellows facing the bearing table is in sealing connection with the lining member, the end of the first bellows facing the bearing table is blocked by the lining member, so that the transmission space is divided into two spaces separated by the first bellows, one space is a sealed space formed in the first bellows, the sealed space is communicated with the sputtering space, and the bearing table is also located in the sealed space formed by the first bellows. The other space is a space except the inner space of the first corrugated pipe, and the space is communicated with the sheet conveying port. And the byproducts in the process enter a sealed space formed by the first corrugated pipe and are then pumped out through the pumping hole. At this time, the sealed space in the first corrugated pipe is separated from the sheet conveying port, so that the sheet conveying port does not need to be closed. In the sheet conveying process, the sheet conveying port is always in an open state, when the bearing table is lowered to a sheet conveying position, one end of the first corrugated pipe facing the bearing table is separated from the lining piece, the bearing table is exposed from the space in the first corrugated pipe, and the space except the inner space of the first corrugated pipe in the transmission space is communicated with the inner space of the first corrugated pipe, so that the sheet conveying can be directly carried out on the bearing table; when the sheet conveying is completed, the bearing table is lifted to the process position, and the sheet conveying port is separated from the inner space of the first corrugated pipe, so that the processing process can be directly carried out. In the scheme, the sheet conveying opening does not need to be opened or closed in the sheet conveying process, so that the sheet conveying time is shortened, and the process efficiency of the process chamber is improved.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor processing apparatus disclosed in an embodiment of the present application;

FIG. 2 is a schematic view of a portion of the components of a carrier device in a process chamber disclosed in an embodiment of the present application;

FIG. 3 is a cross-sectional view of FIG. 2;

FIG. 4 is a partial cross-sectional view of a deposition ring and a cover ring in a process chamber as disclosed in an embodiment of the present application;

FIG. 5 is a top view of a cover ring in a process chamber as disclosed in an embodiment of the present application;

FIG. 6 is a cross-sectional view taken along the direction A-A in FIG. 5;

FIG. 7 is an enlarged view of a portion of FIG. 6;

FIG. 8 is a top view of a deposition ring in a process chamber as disclosed in an embodiment of the present application;

FIG. 9 is a cross-sectional view taken along the direction B-B in FIG. 8;

FIG. 10 is an enlarged view of a portion of FIG. 9;

FIG. 11 is a top view of a carrier body in a process chamber as disclosed in an embodiment of the present application;

fig. 12 is a cross-sectional view taken along the direction C-C in fig. 11.

Reference numerals illustrate:

100-chamber body, 101-sputtering space, 102-transmission space, 121-extraction opening and 122-wafer transfer opening;

200-liner, 201-vent channel, 2011-first channel, 2012-second channel, 202-first relief gap, 203-second relief gap, 204-third relief gap, 210-deposition ring, 211-third ring body, 2111-locating boss, 2113-first annular groove, 2114-second annular groove, 212-fourth annular extension wall, 213-second ring body, 220-cover ring, 221-first ring body, 2211-locating groove, 2212-annular boss, 2213-vent hole, 2214-annular recess, 222-first annular extension wall, 223-second annular extension wall, 224-first ring body, 230-shield, 231-second ring body, 232-third annular extension wall, 233-connecting ring body, 234-inlet channel, 2341-inlet port, 2342-annular channel, 2343-inlet port, 235-cooling channel;

300-carrier, 310-carrier table, 311-carrier body, 3111-circumferential air duct, 3112-radial air duct, 312-functional section, 320-drive shaft, 330-first bellows, 340-second bellows, 351-first flange, 3511-first connecting ring, 3512-second connecting ring, 3513-connecting spoke, 3514-vent gap, 352-second flange, 353-third flange, 354-fourth flange, 361-first insulating ring, 362-second insulating ring;

400-target material;

500-transfer chamber.

Detailed Description

The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings of the embodiments of the present application, and it is apparent that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

The terms first, second and the like in the description and in the claims, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged, as appropriate, such that embodiments of the present application may be implemented in sequences other than those illustrated or described herein, and that the objects identified by "first," "second," etc. are generally of a type and not limited to the number of objects, e.g., the first object may be one or more. Furthermore, in the description and claims, "and/or" means at least one of the connected objects, and the character "/", generally means that the associated object is an "or" relationship.

The process chamber and the semiconductor process equipment provided by the embodiments of the present application are described in detail below with reference to the accompanying drawings by specific embodiments and application scenarios thereof.

As shown in fig. 1-12, embodiments of the present application disclose a process chamber for use in semiconductor processing equipment for processing wafers. The process chamber may be a PVD (Physical Vapor Deposition ) chamber, although other chambers are possible and are not limited in this regard.

The disclosed process chamber includes a chamber body 100, a liner 200, and a carrier 300. The chamber body 100 provides a mounting basis for other components of the process chamber. The lining member 200 is located in the chamber body 100, the lining member 200 divides the inner cavity of the chamber body 100 into a sputtering space 101 and a transmission space 102, and in the process of working, wafers are transferred into the sputtering space 101 from the transmission space, and the wafers are subjected to sputtering coating treatment in the sputtering space 101.

In the above embodiment, the process chamber disclosed in the embodiments of the present application further includes the target 400, the target 400 may be disposed at the top of the chamber body 100, the target 400 and the chamber body 100 enclose an inner cavity of the process chamber, the liner 200 is located in the inner cavity enclosed by the chamber body 100 and the target 400, and the target 400 is located at the top of the liner 200, and covers the top of the liner 200, so that the top of the sputtering space 101 is closed.

In a specific process, a process gas is introduced into the sputtering space 101, a voltage is applied to the target 400, the process gas in the sputtering space 101 is ionized to generate plasma, and the plasma bombards the target 400, so that the target 400 is subjected to atomic sputtering and is attached to the surface of a wafer, and a film plating process of the wafer is realized.

The carrier 300 is movably disposed in the transfer space 102, and the carrier 300 performs a wafer transfer operation in the transfer space 102. The chamber body 100 is provided with a wafer transfer port 122 and an extraction port 121, the wafer transfer port 122 is used for communicating a process chamber with a transfer chamber 500 of a semiconductor process device, and the transfer chamber 500 transfers a wafer into the transfer space 102 or transfers a wafer in the transfer space 102 through the wafer transfer port 122. The liner 200 is provided with a ventilation channel 201, and the ventilation channel 201 is used for discharging reaction byproducts generated in the sputtering space 101 into the transmission space 102 and discharging the reaction byproducts through the pumping hole 121. The pumping port 121 communicates with a vacuum pump for pumping out reaction byproducts in the sputtering space 101. The reaction by-products may be contaminants such as gases, particles, etc. generated during the sputtering process.

The carrier 300 includes a carrier 310 and a first bellows 330, the carrier 310 being configured to carry a wafer to be processed. The carrying device 300 is arranged in the transmission space 102 in a lifting manner, and the carrying platform 310 can move in the transmission space 102, so that the carrying platform 310 is switched between a wafer transferring position and a process position, and the carrying platform 310 can be used for transferring wafers for the carrying platform 310 when the carrying platform 310 is in the wafer transferring position. With the carrier 310 in the process position, at least a portion of the wafer extends into the sputtering space 101, and the wafer is processed at the process position. The two ends of the first bellows 330 are respectively connected with the bottom wall of the chamber body 100 and one side of the bearing table 310 facing the bottom wall of the chamber body 100 in a sealing manner, at this time, the first end of the first bellows 330 is connected with the bottom wall of the chamber body 100 in a sealing manner, the second end of the first bellows 330 is connected with one side of the bearing table 310 facing the bottom wall of the chamber body 100, and the first bellows 330 is communicated with the pumping hole 121. The first end of the first bellows 330 is sealingly connected to the chamber body 100, so that the first end of the first bellows 330 is fixed to the bottom wall of the chamber body 100 and the first end of the first bellows 330 does not move. The second end of the first bellows 330 is connected to the carrying stage 310, and the second end of the first bellows 330 is the end of the first bellows 330 facing the carrying stage 310. Thus, when the stage 310 is lifted, the second end of the first bellows 330 is lifted along with the stage 310, so that the second end of the first bellows 330 is close to the liner 200 or far from the liner 200.

When the susceptor 310 is raised to the process position, the second end of the first bellows 330 is hermetically connected to the liner 200, the sputtering space 101 is communicated with the inner space of the first bellows 330 through the ventilation passage 201, and the sheet transfer port 122 is blocked from the inner space of the first bellows 330. At this time, at least part of the carrying table 310 may extend into the sputtering space 101, the carrying table 310 may close the bottom of the sputtering space 101, and the sputtering space 101 forms a closed space. In addition, the first end of the first bellows 330 is connected with the bottom wall of the chamber body 100 in a sealing manner, and the second end of the first bellows 330 is connected with the liner 200 in a sealing manner, so that the first bellows 330, the liner 200 and the bottom wall of the chamber body 100 define a sealed space in the transmission chamber 500, and the sealed space is separated from the space except the sealed space in the transmission space 102, so that the sealed space defined by the first bellows 330, the liner 200 and the bottom wall of the chamber body 100 is separated from the wafer transfer port 122, and the space except the sealed space in the transmission space 102 is communicated with the wafer transfer port 122.

In a specific operation, when the carrying platform 310 is lowered to the transfer position, the length of the first bellows 330 is shorter, so that the first bellows is not in sealing connection with the liner 200, and therefore the carrying platform 310 is exposed, and the transfer chamber 500 can transfer the sheet to the carrying platform 310 through the sheet transfer port 122. At this time, the end of the first bellows 330 facing the loading table 310 is separated from the liner 200, and the transfer port 122 is in communication with the inner space of the first bellows 330. When the transfer is completed, the loading table 310 is lifted, and the second end of the first bellows 330 moves together with the loading table 310 in a direction toward the liner 200. When the carrier 310 is raised to the process position, the liner 200 contacts the second end of the first bellows 330, thereby forming a sealed connection. At this time, the liner 200 seals the second end of the first bellows 330 so that the space inside the first bellows 330 is not communicated with the transmission space 102 outside thereof. Reaction byproducts in the sputtering space 101 enter the space inside the first bellows 330 through the ventilation channel 201, and are then discharged through the pumping port 121. After the sputtering process is completed, the carrying platform 310 is lowered to the transfer position, and the second end of the first bellows 330 is also moved towards a direction away from the liner 200, so that the second end of the first bellows 330 is no longer sealed by the liner 200, and therefore, the carrying platform 310 is exposed, and the transfer operation can be performed on the carrying platform 310.

In the embodiment disclosed herein, byproducts of the process enter the closed space formed by the first bellows 330 and are then extracted through the extraction opening 121. At this time, the sealed space in the first bellows 330 is separated from the transfer port 122, so that the transfer port 122 does not need to be closed. Therefore, in the process of transferring the sheet, the sheet transferring port 122 can be always in an open state, and when the carrying platform 310 is lowered to the sheet transferring position, the carrying platform 310 is exposed, so that the carrying platform 310 can be directly transferred; when the transfer is completed, the carrier 310 is lifted to the processing position, and the processing process can be directly performed. Therefore, the wafer transfer port 122 does not need to be opened or closed in the wafer transfer process, so that the wafer transfer time is shortened, and the process efficiency of the process chamber is improved.

In addition, the wafer transfer port 122 of the process chamber does not need to be opened and closed, so that a valve is not required to be arranged on the wafer transfer port 122, the structure of the process chamber can be simplified, and the manufacturing cost of the process chamber can be reduced.

In the above embodiment, the carrying device 300 further includes a driving shaft 320, where the driving shaft 320 is connected to the carrying platform 310, and the driving shaft 320 drives the carrying platform 310 to move. The drive shaft 320 drives the carrier stage to switch between a process position and a transfer position.

Of course, the driving shaft 320 of the carrying device may also be connected to the second end of the first bellows 330, so as to drive the carrying platform 310 to switch between the process position and the transfer position by driving the second end of the first bellows 330 to move.

In another alternative embodiment, the liner 200 may include a deposition ring 210, a cover ring 220, and a shield 230, the shield 230 being coupled to the chamber body 100. The shielding member 230 may be disposed outside the cover ring 220, the deposition ring 210 may be disposed around the susceptor 310, the cover ring 220 may be disposed around the deposition ring 210, and the deposition ring 210 may have a converging effect on the atoms of the target 400, thereby improving the efficiency of depositing a thin film on the wafer. The stage 310 may move the deposition ring 210 to bring the cover ring 220 into contact with the deposition ring 210.

In a specific process, the susceptor 310 drives the deposition ring 210 to move, and when the susceptor 310 moves to a process position with the wafer, an edge portion of the deposition ring 210 contacts an edge portion of the cover ring 220, and the deposition ring 210 and the cover ring 220 are closed. The susceptor 310 can close the bottom of the sputtering space 101, and the sputtering space 101 forms a closed space.

The vent passageway 201 may include a first passageway 2011 and a second passageway 2012, the shield 230 and the cover ring 220 may enclose the first passageway 2011, and the deposition ring 210 and the cover ring 220 enclose the second passageway 2012.

With the carrier 310 raised to the process position, the second end of the first bellows 330 may be sealingly connected to the shield 230. At this time, the shielding member 230 is located at the outermost sides of the deposition ring 210 and the cover ring, and the first bellows 330 is in sealing connection with the shielding member 230, so as to ensure that the first passage 2011 surrounded by the shielding member 230 and the cover ring 220 and the second passage 2012 surrounded by the deposition ring 210 and the cover ring 220 are located in the opposite area to the port of the second end of the first bellows 330, so as to ensure that the first passage 2011 and the second passage 2012 are in communication with the inner space of the first bellows when the second end of the first bellows 330 is in sealing connection with the shielding member.

In this embodiment, the ventilation channel 201 includes two ventilation paths, one is composed of the shielding member 230 and the cover ring 220, and the other is composed of the deposition ring 210 and the cover ring 220, so that the ventilation path between the sputtering space 101 and the first bellows 330 can be increased, and the exhaust amount of the sputtering space 101 can be increased, so that the reaction byproducts in the sputtering space 101 can be rapidly exhausted, the exhaust rate of the sputtering space 101 is improved, and the process reliability of the process chamber is further improved.

In addition, the lining member 200 with the above structure is separately arranged, so that the cleaning and replacement of the lining member 200 are more convenient, for example, two sets of lining members can be prepared for alternate use.

In the above embodiment, the reaction byproducts enter the transmission space 102 through the ventilation channel 201, and the ionized plasma and sputtering substances such as sputtering atoms enter the reaction space through the ventilation channel 201, so that the sidewalls of the carrier 310, the first bellows 330 and the driving shaft 320 are coated, thereby polluting the process chamber.

Based on this, in another alternative embodiment, the cover ring 220 may include a first ring main body 221, a first annular extension wall 222, and a second annular extension wall 223, and one ends of the first annular extension wall 222 and the second annular extension wall 223 are connected to one side of the first ring main body 221 toward the bottom wall of the chamber body 100, and the other ends are disposed to extend toward the bottom wall of the chamber body 100. The first annular extension wall 222 may be disposed around the second annular extension wall 223.

The shield 230 may include a second annular body 231 and a third annular extension wall 232 connected, the second annular body 231 being connected with the chamber body 100, the third annular extension wall 232 extending toward a direction away from the bottom wall of the chamber body 100, and at least a portion of the third annular extension wall 232 being located between the first annular extension wall 222 and the second annular extension wall 223, the first annular extension wall 222, the second annular extension wall 223, and the third annular extension wall 232 may enclose a first channel 2011. With the carrier 310 raised to the process position, the second end of the first bellows 330 is sealingly connected to the second ring body 231.

Specifically, at least a portion of the third annular extending wall 232 is located between the first annular extending wall 222 and the second annular extending wall 223, at this time, during the transfer process, the reaction byproducts flow downward, enter the gap between the first annular extending wall 222 and the third annular extending wall 232 from the bottom end of the first annular extending wall 222, then flow upward, wind around the top end of the third annular extending wall 232 into the gap between the third annular extending wall 232 and the second annular extending wall 223, then flow downward, and flow into the first bellows 330 from the bottom end of the second annular extending wall 223.

At this time, the first channel 2011 surrounded by the first annular extending wall 222, the second annular extending wall 223 and the third annular extending wall 232 is a bending channel, and the bending channel design structure can improve the adsorption performance of the sputtering material, so that more sputtering material is deposited.

In another alternative embodiment, the other end of the second annular extending wall 223 may further have a first ring body 224 extending in a direction away from the first annular extending wall 222, the first ring body 221 may be provided with a vent hole 2213, and the second annular extending wall 223 and the first ring body 224 may enclose a second passage 2012 with the deposition ring 210. At least part of the vent hole 2213 is disposed opposite to the first ring 224, and the sputtering space 101 communicates with the second passage 2012 through the vent hole 2213. Specifically, the reaction byproducts enter the second passage 2012 through the vent hole 2213 and then enter the first bellows 330 through the second passage 2012.

In this embodiment, at least a portion of the vent hole 2213 is disposed opposite to the first ring 224, so that the first ring 224 can cover at least a portion of the vent hole 2213, and most of the particles can be deposited on the first ring 224 during the transfer process of the reaction byproducts, so as to improve the adsorption performance of the sputtering material, and further avoid the pollution of the process chamber.

In the above embodiment, the first ring main body 221 may be provided with a plurality of ventilation holes 2213, and the plurality of ventilation holes 2213 may be arranged at intervals along the circumferential direction of the first ring main body 221. This scheme can further improve the exhaust efficiency of the sputtering space 101.

In another alternative embodiment, the deposition ring 210 may include a third ring body 211, a fourth annular extension wall 212, and a second ring body 213, where the third ring body 211 is connected to the susceptor 310, one end of the fourth annular extension wall 212 is connected to an outer edge of the third ring body 211, and the other end extends toward the bottom wall of the chamber body 100, and the second ring body 213 is connected to the other end of the fourth annular extension wall 212 and extends away from the susceptor 310. The first ring body 224 and the second ring body 213 may be staggered. The second annular extension wall 223, the first ring 224, the second ring 213, and the fourth annular extension wall 212 enclose a second passage 2012.

With the carrier 310 raised to the process position, the first ring body 221 is in contact with the third ring body 211.

In this embodiment, the first ring 224 and the second ring 213 are staggered. When the first ring 224 is positioned above the second ring 213, the reaction byproducts are wound from the inner edge of the first ring 224 into the gap between the first ring 224 and the second ring 213, and then discharged into the first bellows 330 through the opening formed by the first ring 224 and the second ring 213. When the first ring 224 is positioned below the second ring 213, the reaction byproducts are wound from the outer edge of the second ring 213 into the gap between the first ring 224 and the second ring 213, and then discharged into the first bellows 330 through the opening formed by the first ring 224 and the second ring 213. At this time, the first ring 224 and the second ring 213 may form a bent channel, such as a "Z" channel, and the bent channel design structure may improve the adsorption performance of the sputtered material, so that more sputtered material is deposited, and the sputtered material is prevented from entering the first bellows 330 and being deposited on the first bellows 330, the carrier 310, the driving shaft 320, and so on.

In the above embodiment, the first channel 2011 and the second channel 2012 are both bending channels, and the bending channel design structure can improve the adsorption performance of the sputtering material, so that more sputtering material is deposited, and therefore, the above embodiment not only can improve the exhaust efficiency of the sputtering space 101, but also ensures the cleanliness of the process chamber.

In the above embodiment, the shield 230 supports the cover ring 220 when the process chamber is inactive, that is, when the carrier 310 has not been raised to the process position. Specifically, the top end of the third annular extension wall 232 abuts against the first ring body 221 of the cover ring 220, at which point the first passage 2011 is closed. When the process chamber is in an operating state, that is, when the susceptor 310 is lifted to the process position, the susceptor 310 drives the deposition ring 210 to move, the deposition ring 210 contacts the cover ring 220, and the deposition ring 210 continues to move upwards, the deposition ring 210 lifts the cover ring 220, so that a gap is formed between the top end of the third annular extension wall 232 and the first ring main body 221, and the first channel 2011 is opened.

In the above embodiment, the deposition ring 210 and the cover ring 220 are easy to slide relatively, so that metal particles are easy to be generated, and the wafer is easy to be ignited during the film plating process.

Based on this, in another alternative embodiment, a positioning protrusion 2111 may be provided at an outer edge of the third ring main body 211 and toward a side of the bottom wall of the chamber body 100. The first ring 224 may be provided with a positioning groove 2211. At least a portion of the positioning protrusion 2111 is located within the positioning groove 2211 and is in positioning engagement with the positioning groove 2211.

In this embodiment, the positioning protrusion 2111 is matched with the positioning groove 2211 in a positioning manner, so that relative sliding between the deposition ring 210 and the cover ring 220 can be avoided, and further, metal particles generated between the deposition ring 210 and the cover ring 220 can be avoided, so as to avoid the risk of striking fire of the wafer in the process of coating.

Further, the edge of the positioning protrusion 2111 near the outer edge of the third ring main body 211 is matched with the edge of the positioning groove 2211 near the outer edge of the first ring main body 221, at this time, the deposition ring 210 and the cover ring 220 can realize full circumferential positioning, so that the risk of striking fire of the wafer in the process of coating is further avoided.

In an alternative embodiment, the sidewall of the positioning groove 2211 near the outer edge of the first ring body 221 may be inclined toward the outer edge of the first ring body 221, in which case the notch of the positioning groove 2211 is larger than the groove bottom of the positioning groove 2211, thereby facilitating the engagement of the positioning protrusion 2111 with the positioning groove 2211.

In the above embodiment, the first ring body 221 and the third ring body 211 are easily adhered, and when the first ring body 221 and the third ring body 211 are separated, the first ring body 221 and the third ring body 211 are easily subject to metal particles, so that a sparking phenomenon is easily generated.

Based on this, in another alternative embodiment, a first escape gap 202 may be provided between the first ring body 221 and the third ring body 211, a surface of the first ring body 221 facing one side of the third ring body 211 may be provided with a plurality of annular depressions 2214, and the plurality of annular depressions 2214 may be spaced apart in a radial direction of the first ring body 221. A plurality of annular recesses 2214 may be located between the positioning groove 2211 and an inner edge of the first ring body 221. A plurality of the annular recessed portions 2214 form a stepped structure. The bottom walls of the plurality of annular recesses 2214 and the second ring body 231 enclose a first avoidance gap 202.

Specifically, the plurality of annular recesses 2214 form a stepped structure, in which the distances between the bottom surfaces of the plurality of annular recesses 2214 and the top surface of the third ring body 211 gradually decrease in the direction from the inner edge of the first ring body 221 to the outer edge of the first ring body 221.

In this aspect, the distances between the bottom surfaces of the plurality of annular depressions 2214 and the top surface of the third ring body 211 gradually increase in the direction from the outer edge of the first ring body 221 to the inner edge of the first ring body 221, that is, the first escape gap 202 between the first ring body 221 and the third ring body 211 is wider at the area near the inner edge of the first ring body 221 and smaller at the area far from the inner edge of the first ring body 221. The width and depth of the first relief gap 202 between the deposition ring 210 and the cover ring 220 are increased to avoid sticking of the first ring body 221 to the third ring body 211, further reducing the risk of a process chamber arcing.

Further, a surface of the third ring body 211 facing the side of the first ring body 221 may be provided with a plurality of first annular grooves 2113, the plurality of first annular grooves 2113 may be arranged at intervals in a radial direction of the third ring body 211, and at least a portion of the first annular grooves 2113 may be opposite to the annular recess 2214. In this embodiment, when the sputtering material enters the avoiding gap 202, the sputtering material can be deposited into the first annular groove 2113, so as to avoid the phenomenon that the sputtering material is deposited on the upper surface of the third ring main body 211 to have a larger thickness, which causes adhesion between the first ring main body 221 and the third ring main body 211. In addition, the sputtered material may be deposited in the first annular groove 2113, thus also avoiding the risk of the sputtered material continuing to travel to the outer edge of the deposition ring 210, thereby further reducing the risk of sticking of the first ring body 221 to the third ring body 211.

In another alternative embodiment, the first ring body 221 and the third ring body 211 may also have a second relief gap 203 therebetween. The first relief gap 202 communicates with the second relief gap 203. The surface of the third ring body 211 facing the side of the first ring body 221 may be further provided with a second annular groove 2114, and the second annular groove 2114 may be disposed around the first annular groove 2113. The side of the first ring body 221 facing the third ring body 211 may be provided with an annular protrusion 2212, at least part of the annular protrusion 2212 is located in the second annular groove 2114, and the annular protrusion 2212 and the groove wall of the second annular groove 2114 may enclose the second avoiding gap 203.

In this solution, the second avoiding gap 203 surrounded by the annular protruding portion 2212 and the groove wall of the second annular groove 2114 is a bending channel, and the bending channel design structure can improve the adsorption performance of the sputtered material, so that more sputtered material is deposited, and the sputtered material is prevented from being transmitted to the positions of the positioning groove 2211 and the positioning protrusion 2111.

In the above embodiment, the edge of the positioning protrusion 2111 near the outer edge of the third ring body 211 is matched with the edge of the positioning groove 2211 near the outer edge of the first ring body 221, so that the side wall of the positioning protrusion 2111 near the inner edge of the third ring body 211 and the side wall of the positioning groove 2211 near the inner edge of the first ring body 221 form the third avoiding gap 204. The avoidance gap between the first ring main body 221 and the third ring main body 211 at this time includes three parts, namely, a first avoidance gap 202 surrounded by the plurality of annular concave portions 2214 and the third ring main body 211, a second avoidance gap 203 formed by the second annular groove 2114 and the annular convex portion 2212, and a third avoidance gap 204 formed between a side wall of the positioning protrusion 2111 near the inner edge of the third ring main body 211 and a side wall of the positioning groove 2211 near the inner edge of the first ring main body 221. This further increases the depth of the relief gap, thereby further avoiding the risk of the first ring body 221 and the third ring body 211 being prone to sticking.

Alternatively, the relief gap between the first ring body 221 and the third ring body 211 may have a depth of 27.5mm and a width of between 0.5 and 1 mm.

In the above embodiment, the chamber body 100 may be provided with an air inlet channel, and the air inlet channel may be used to introduce the process gas into the sputtering space 101. Specifically, the intake passage may be in communication with the first bellows 330. When the process gas is introduced into the sputtering space 101, the process gas is first introduced into the closed space formed by the first bellows 330 through the gas inlet passage, and then introduced into the sputtering space 101 through the gas outlet passage 201. However, the ventilation rate of the ventilation channel 201 is slow, so that the ventilation channel 201 is used for introducing the process gas into the sputtering space 101, so that the flow rate of the process gas in the ventilation sputtering space 101 is low, and thus less plasma is formed, the sputtering space 101 is difficult to ignite, and poor process performance of the process chamber is easily caused.

In this regard, in an alternative embodiment disclosed herein, the shield 230 may overlap the chamber body 100, the shield 230 may be provided with an air inlet channel 234, and the air inlet channel 234 may be in communication with the sputtering space 101. In this solution, the process gas is directly introduced into the sputtering space 101 through the air inlet channel 234 formed on the shielding member 230, so that the process gas does not pass through the air channel 201 on the liner member 200, so that the flow rate of the process gas introduced into the sputtering space 101 is larger, the number of the formed plasmas is larger, the sputtering space 101 is easier to ignite, and the process performance of the process chamber is improved.

In addition, the original adaptor is omitted in the above-mentioned scheme, and the shielding member 230 is directly overlapped with the chamber body 100, so that the chamber structure of the process chamber is further simplified.

Specifically, the shielding member 230 further includes a connection ring body 233, one end of the connection ring body 233 is overlapped on the top of the chamber body 100, and the other end of the connection ring body 233 is connected with the second ring body 231. The intake passage 234 may be provided in the connecting ring 233. Alternatively, the connection ring body 233, the second ring body 231, and the third annular extension wall 232 of the shield 230 may be connected by welding, although other connection methods are possible, and are not limited herein.

In order to further increase the adhesion of the lining member 200, spraying or aluminum-spraying treatment is performed on the surface of the lining member 200, which is easily coated, so as to increase the roughness of the surface of the lining member 200, thereby improving the adhesion of the lining member 200 and increasing the cleaning maintenance period of the lining member 200.

Further, the gas inlet channel 234 may further include a gas inlet 2341, an annular gas passage 2342, and a plurality of gas inlet holes 2343, and the gas inlet 2341 may be in communication with a supply of process gas. The air inlet 2341 communicates with the annular air passage 2342, and the annular air passage 2342 communicates with the sputtering space 101 through a plurality of air inlet holes 2343, the plurality of air inlet holes 2343 being spaced apart along the circumferential direction of the shield 230. Specifically, the process gas is transferred into the annular gas passage 2342 through the gas inlet 2341, and the annular gas passage 2342 transfers the gas along the circumferential direction of the chamber body 100, so that the gas can be distributed to each circumferential region of the chamber body 100, and then enters the sputtering space 101 corresponding to each region of the chamber body 100 through the gas inlet holes 2343 corresponding to each circumferential region of the chamber body 100. The scheme can enable the process gas to be uniformly distributed in the sputtering space 101, so that the uniformity of the wafer sputtering coating can be improved.

In an alternative embodiment, the shielding member 230 may further be provided with a cooling channel 235, and in particular, the cooling channel 235 may be provided on the connection ring body 233. The cooling channels 235 may be used to pass a cooling medium. In this embodiment, the cooling channel 235 formed in the shielding member 230 can cool the process chamber, so as to prevent heat generated in the process chamber from radiating outside the process chamber. Meanwhile, the cooling channel 235 formed on the shielding member 230 can also cool the sealing structure between the shielding member 230 and the first corrugated tube 330, so as to avoid the risk of sealing failure of the sealing structure due to overhigh temperature. For example, the shielding member 230 and the first bellows 330 are sealed by the sealing ring, so the cooling channel 235 formed by the shielding member 230 can cool the sealing ring, and the risk of aging of the sealing ring due to overhigh temperature is avoided.

In the above embodiment, the driving shaft 320 is generally provided with a passage for ventilation and a passage for routing, which are generally in an atmospheric state. While the space within the first bellows 330 is in a vacuum state during the processing of the process chamber, in order to isolate the vacuum from the atmosphere, in an alternative embodiment, the carrier 300 may further include a second bellows 340, and the second bellows 340 may be located between the first bellows 330 and the driving shaft 320. The second bellows 340 is disposed between the first bellows 330 and the driving shaft 320, and both ends of the second bellows 340 are respectively connected with the bottom wall of the chamber body 100 and the bearing table 310 in a sealing manner. Specifically, a first end of the second bellows 340 may be in sealing connection with the bottom wall of the chamber body 100, a second end of the second bellows 340 may be in sealing connection with the carrier 310, and the pumping port 121 may be located between the first bellows 330 and the second bellows 340, where the first bellows 330 is isolated from the second bellows 340. At this time, when the stage 310 is raised to the process position, the space between the inner sidewall of the first bellows 330 and the outer sidewall of the second bellows 340 is in a vacuum state, and the space surrounded by the inner sidewall of the second bellows 340 is in an atmospheric state.

In this embodiment, the first bellows 330 is isolated from the sealed space formed by the second bellows 340, so that the driving shaft 320 is in the atmosphere, and damage to the driving shaft 320 and other components is avoided. In addition, the first bellows 330 and the second bellows 340 are isolated, and the vacuum space between the first bellows 330 and the second bellows 340 is isolated from the atmosphere space formed by the second bellows 340, thereby further improving the sealing performance of the process chamber.

In another alternative embodiment, the first bellows 330 is provided with a first flange 351 and a second flange 352 at both ends, respectively, and the second bellows is provided with a third flange 353 and a fourth flange 354 at both ends, respectively. The first flange 351 may include a first connection ring 3511, a second connection ring 3512, and a plurality of connection spokes 3513, the first connection ring 3511 may surround the second connection ring 3512, the first connection ring 3511 may be connected to the second connection ring 3512 through the plurality of connection spokes 3513, a vent gap 3514 may be provided between two adjacent connection spokes 3513, and the first bellows 330 may be in communication with the sputtering space 101 through the vent gap 3514. A second end of the first bellows 330 may be coupled to the first coupling ring 3511 and the carrier 310 may overlap the second coupling ring 3512. With the carrier 310 raised to the process position, the first coupling ring 3511 may be sealingly coupled to the liner 200, and in particular, the first coupling ring 3511 may be sealingly coupled to the shield 230.

The second flange 352, the third flange 353 and the fourth flange 354 may have an annular structure, the second flange 352 may be disposed at a first end of the first bellows 330, and the second flange 352 may be connected with the bottom wall of the chamber body 100 in a sealing manner. A third flange 353 may be disposed at the first end of the second bellows 340 and sealingly connected to the bottom wall of the chamber body 100. The second flange 352 may be disposed around the third flange 353. A fourth flange 354 may be disposed at a second end of the second bellows 340 and overlap and sealingly connect with the second connection ring 3512.

In this solution, both ends of the first bellows 330 and the second bellows 340 are provided with flange structures, so that the first bellows 330 and the second bellows 340 facilitate sealing connection with the chamber body 100 and sealing connection of the first bellows 330 with the shielding member 230.

In another alternative embodiment, the carrying device 300 may further include a first insulating ring 361 and a second insulating ring 362, and the carrying platform 310, the first insulating ring 361, the second connecting ring 3512, and the second insulating ring 362 may be sequentially stacked, and the second insulating ring 362 may be disposed around the fourth flange 354. In this solution, the carrying platform 310 is connected with the second bellows 340 in an insulating manner by the first insulating ring 361 and the second insulating ring 362, so as to avoid the risk of breakdown of the second bellows 340.

Alternatively, the first insulating ring 361 and the second insulating ring 362 may be made of a material such as ceramic, but other materials may be used, which is not limited herein.

Alternatively, the components of the bearing device 300 may be connected by screws, and other connection manners may be used, which is not limited herein.

In another alternative embodiment, the carrier 310 may include a carrier body 311 and a functional portion 312, where the carrier body 311 is used to carry a wafer, and the functional portion 312 may perform different functions of the carrier 310, such as heating or cooling the wafer. The bearing body 311, the functional part 312, and the second connection ring 3512 are stacked in order and connected hermetically. The bearing body 311 may be provided with a plurality of circumferential air channels 3111 and a plurality of radial air channels 3112, the radial air channels 3112 may extend along a radial direction of the bearing table 310, the circumferential air channels 3111 may extend along a circumferential direction of the bearing table 310, the plurality of radial air channels 3112 may be arranged at intervals along the circumferential direction of the bearing table 310, the plurality of circumferential air channels 3111 may be arranged at intervals along the radial direction of the bearing table 310, and each radial air channel 3112 penetrates through the plurality of circumferential air channels 3111.

In this solution, the circumferential air channels 3111 and the radial air channels 3112 are distributed on the carrier body 311, and the circumferential air channels 3111 and the radial air channels 3112 can be filled with a heat transfer medium, so that when the functional portion 312 heats or cools the wafer, the heat or cold of the functional portion 312 is uniformly conducted to the whole carrier body 311, so that the wafer is heated or cooled more uniformly, and further the process performance of the process chamber is further improved.

Alternatively, the outer edge of the bearing body 311 may be provided with a mounting groove, and at least part of the third ring body 211 may be positioned in the mounting groove, and the bearing body 311 and the third ring body 211 may be connected by a vacuum screw and a positioning pin.

Alternatively, the components to be connected in a sealing manner may be connected in a sealing manner by a sealing ring, and other components may be used in a sealing manner, which is not limited herein.

Based on the process chamber of the above embodiments of the present application, the embodiments of the present application may further include a semiconductor process apparatus having the process chamber of the above embodiments.

The semiconductor processing apparatus disclosed herein further includes a transfer chamber 500, the transfer chamber 500 being configured to transfer wafers to the process chamber, the transfer chamber 500 being in communication with the transfer space 102 through a transfer port.

In the embodiment disclosed in the application, the sheet conveying port 122 does not need to be opened or closed in the sheet conveying process, so that the sheet conveying time is shortened, and the process efficiency of the process chamber is improved.

The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those of ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are also within the protection of the present application.

Claims (18)

1. A process chamber for use in a semiconductor processing apparatus, the process chamber comprising a chamber body (100), a liner (200), and a carrier (300);

the inner cavity of the chamber body (100) is divided into a sputtering space (101) and a transmission space (102) by the lining piece (200), the chamber body (100) is provided with a sheet conveying opening (122) and an extraction opening (121), the sheet conveying opening (122) is communicated with the transmission space (102), and the lining piece (200) is provided with a ventilation channel (201);

the bearing device (300) is arranged in the transmission space (102) in a lifting manner, the bearing device (300) comprises a bearing table (310) and a first corrugated pipe (330), two ends of the first corrugated pipe (330) are respectively connected with the bottom wall of the chamber body (100) and one side, facing the bottom wall of the chamber body (100), of the bearing table (310) in a sealing manner, and the first corrugated pipe (330) is communicated with the pumping hole (121);

when the bearing table (310) rises to a process position, one end of the first corrugated pipe (330) facing the bearing table (310) is connected with the lining piece (200) in a sealing way, the sputtering space (101) is communicated with the inner space of the first corrugated pipe (330) through the ventilation channel (201), and the sheet conveying port (122) is separated from the inner space of the first corrugated pipe (330);

When the carrying table (310) descends to a sheet transferring position, one end of the first corrugated pipe (330) facing the carrying table (310) is separated from the lining member (200), and the sheet transferring port (122) is communicated with the inner space of the first corrugated pipe (330).

2. The process chamber of claim 1, wherein the liner (200) comprises a deposition ring (210), a cover ring (220), and a shield (230), the shield (230) being coupled to the chamber body (100), and the shield (230) being disposed around the cover ring (220), the deposition ring (210) being disposed around the carrier (310), the cover ring (220) being disposed around the deposition ring (210), the carrier (310) being movable to bring the deposition ring (210) into contact with the cover ring (220);

the vent channel (201) comprises a first channel (2011) and a second channel (2012), the shield (230) and the cover ring (220) enclose the first channel (2011), and the deposition ring (210) and the cover ring (220) enclose the second channel (2012);

the first bellows (330) is sealingly connected to the shield (230) at an end of the first bellows facing the carrier (310) when the carrier (310) is raised to the process position.

3. The process chamber of claim 2, wherein the cover ring (220) comprises a first ring body (221), a first annular extension wall (222) and a second annular extension wall (223), one end of each of the first annular extension wall (222) and the second annular extension wall (223) being connected to a side of the first ring body (221) facing the bottom wall of the chamber body (100), the other end being disposed extending toward the bottom wall of the chamber body (100), the first annular extension wall (222) being disposed around the second annular extension wall (223);

the shield (230) comprises a second annular main body (231) and a third annular extension wall (232) which are connected, the second annular main body (231) is connected with the chamber body (100), the third annular extension wall (232) extends towards the direction away from the bottom wall of the chamber body (100), at least part of the third annular extension wall (232) is positioned between the first annular extension wall (222) and the second annular extension wall (223), and the first annular extension wall (222), the second annular extension wall (223) and the third annular extension wall (232) enclose the first channel (2011); the first bellows (330) is sealingly connected to the second ring body (231) at an end facing the carrier table (310) when the carrier table (310) is raised to the process position.

4. A process chamber according to claim 3, wherein the other end of the second annular extension wall (223) further has a first ring body (224) extending in a direction away from the first annular extension wall (222), the first ring body (221) is provided with a vent hole (2213), the second annular extension wall (223) and the first ring body (224) enclose the second channel (2012) with the deposition ring (210), at least part of the vent hole (2213) is arranged opposite to the first ring body (224), and the sputtering space (101) is communicated with the second channel (2012) through a plurality of vent holes (2213).

5. The process chamber of claim 4, wherein the first ring body (221) is provided with a plurality of ventilation holes (2213), and the ventilation holes (2213) are arranged at intervals along the circumferential direction of the first ring body (221).

6. The process chamber of claim 4, wherein the deposition ring (210) comprises a third ring body (211), a fourth annular extension wall (212) and a second ring body (213), the third ring body (211) being connected to the susceptor (310), one end of the fourth annular extension wall (212) being connected to an outer edge of the third ring body (211) and the other end being arranged extending towards a bottom wall of the chamber body (100), the second ring body (213) being connected to the other end of the fourth annular extension wall (212) and being arranged extending in a direction away from the susceptor (310), the first ring body (224) being staggered with respect to the second ring body (213), the second annular extension wall (223), the first ring body (224), the second ring body (213) and the fourth annular extension wall (212) enclosing the second passage 2012;

The first ring body (221) is in contact with the third ring body (211) with the carrier table (310) raised to the process position.

7. The process chamber of claim 6, wherein an outer edge of the third ring body (211) and a surface facing the bottom wall of the chamber body (100) are provided with positioning protrusions (2111), the first ring body (221) is provided with positioning grooves (2211), and at least part of the positioning protrusions (2111) are located in the positioning grooves (2211) and are in positioning fit with the positioning grooves (2211).

8. The process chamber of claim 7, wherein a first relief gap (202) is provided between the first ring body (221) and the third ring body (211), a surface of the first ring body (221) facing one side of the third ring body (211) is provided with a plurality of annular recesses (2214), the plurality of annular recesses (2214) are distributed at intervals along a radial direction of the first ring body (221), and the plurality of annular recesses (2214) are located between the positioning groove (2211) and an inner edge of the first ring body (221); a plurality of annular concave parts (2214) form a stepped structure;

the bottom walls of the annular concave parts (2214) and the third ring main body (211) enclose the first avoidance gap (202).

9. The process chamber of claim 8, wherein a surface of the third ring body (211) facing one side of the first ring body (221) is provided with a plurality of first annular grooves (2113), the plurality of first annular grooves (2113) being arranged at intervals along a radial direction of the third ring body (211), at least a portion of the first annular grooves (2113) being opposite to the annular recess (2214).

10. The process chamber of claim 9, wherein a second avoidance gap (203) is further provided between the first ring main body (221) and the third ring main body (211), the first avoidance gap (202) is communicated with the second avoidance gap (203), a second annular groove (2114) is further formed in a surface of one side of the third ring main body (211) facing the first ring main body (221), the second annular groove (2114) is disposed around the first annular groove (2113), an annular protruding portion (2212) is disposed on one side of the first ring main body (221) facing the third ring main body (211), at least a part of the annular protruding portion (2212) is located in the second annular groove (2114), and the annular protruding portion (2212) and a groove wall of the second annular groove (2114) enclose the second avoidance gap (203).

11. The process chamber of claim 2, wherein the shield (230) is overlapped on the chamber body (100), the shield (230) is provided with an air inlet channel (234), and the air inlet channel (234) is communicated with the sputtering space (101).

12. The process chamber of claim 11, wherein the air inlet channel (234) comprises an air inlet (2341), an annular air passage (2342) and a plurality of air inlet holes (2343), the air inlet (2341) being in communication with the annular air passage (2342), the annular air passage (2342) being in communication with the sputtering space (101) through the plurality of air inlet holes (2343), the plurality of air inlet holes (2343) being spaced apart along a circumference of the shield (230).

13. The process chamber according to claim 12, wherein the shield (230) is further provided with cooling channels (235), the cooling channels (235) being adapted to be fed with a cooling medium.

14. The process chamber of claim 1, wherein the carrier device (300) further comprises a second bellows (340) and a driving shaft (320), the driving shaft (320) is connected with the carrying table (310), the driving shaft (320) drives the carrying table (310) to move, the second bellows (340) is located between the first bellows (330) and the driving shaft (320), two ends of the second bellows (340) are respectively connected with the bottom wall of the chamber body (100) and the carrying table (310) in a sealing manner, the pumping hole (121) is located between the first bellows (330) and the second bellows (340), and the inner cavity of the first bellows (330) is isolated from the inner cavity of the second bellows (340).

15. The process chamber according to claim 14, wherein one end of the first bellows (330) is provided with a first flange (351), the first flange (351) comprising a first connection ring (3511), a second connection ring (3512) and a plurality of connection spokes (3513), the first connection ring (3511) surrounding the second connection ring (3512), the first connection ring (3511) and the second connection ring (3512) being connected by a plurality of the connection spokes (3513), a venting gap (3514) being provided between two adjacent connection spokes (3513), the first bellows (330) being in communication with the venting channel (201) through the venting gap (3514); -the first bellows (330) is connected to the first connection ring (3511), the carrier (310) being superposed to the second connection ring (3512); -the first connection ring (3511) is sealingly connected to the liner (200) with the carrier table (310) raised to the process position;

the other end of the first corrugated pipe (330) is provided with a second flange (352), two ends of the second corrugated pipe (340) are respectively provided with a third flange (353) and a fourth flange (354), the second flange (352), the third flange (353) and the fourth flange (354) are all of annular structures, and the second flange (352) is in sealing connection with the bottom wall of the chamber body (100); the third flange (353) is in sealing connection with the bottom wall of the chamber body (100), and the second flange (352) is arranged around the third flange (353); the fourth flange (354) is superposed with the second connecting ring (3512) and is connected in a sealing manner.

16. The process chamber of claim 15, wherein the carrier device (300) further comprises a first insulating ring (361) and a second insulating ring (362), the carrier table (310), the first insulating ring (361), the second connecting ring (3512) and the second insulating ring (362) being stacked in sequence, the second insulating ring (362) being disposed around the fourth flange (354).

17. The process chamber of claim 15, wherein the carrier table (310) comprises a carrier body (311) and a functional portion (312), the carrier body (311), the functional portion (312) and the second connection ring (3512) are sequentially stacked and are in sealing connection, the carrier body (311) is provided with a plurality of circumferential air passages (3111) and a plurality of radial air passages (3112), the radial air passages (3112) extend along the radial direction of the carrier table (310), the circumferential air passages (3111) extend along the circumferential direction of the carrier table (310), a plurality of radial air passages (3112) are arranged at intervals along the circumferential direction of the carrier table (310), and a plurality of circumferential air passages (3111) are arranged at intervals along the radial direction of the carrier table (310), each radial air passage (3112) penetrates through a plurality of circumferential air passages (3111).

18. A semiconductor processing apparatus comprising a transfer chamber (500) and the process chamber of any of claims 1 to 17, the transfer chamber (500) being in communication with the transfer space (102) through the transfer port (122).