CN117754451A - Method and system for researching influence of abrasive particle concentration in polishing solution on contact degree - Google Patents
Method and system for researching influence of abrasive particle concentration in polishing solution on contact degree Download PDFInfo
- Publication number
- CN117754451A CN117754451A CN202410132088.6A CN202410132088A CN117754451A CN 117754451 A CN117754451 A CN 117754451A CN 202410132088 A CN202410132088 A CN 202410132088A CN 117754451 A CN117754451 A CN 117754451A
- Authority
- CN
- China
- Prior art keywords
- contact
- polishing pad
- image
- light
- transmitting substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 120
- 239000002245 particle Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000000694 effects Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000006061 abrasive grain Substances 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 12
- 239000000725 suspension Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 230000001131 transforming effect Effects 0.000 claims description 3
- 238000003760 magnetic stirring Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 238000011068 loading method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Abstract
The application discloses a method for researching influence of abrasive particle concentration in polishing solution on contact degree, which comprises the following steps: fixing the position of a light-transmitting substrate, wherein the material of the light-transmitting substrate is the same as that of a wafer; distributing abrasive particles at a set distribution density to a polishing pad, the distribution comprising: the number of abrasive particles in unit area and the uniformity of abrasive particle distribution; connecting the polishing pad to a pressure applying device, and controlling the pressure applying device to set pressure to press the polishing pad against the light-transmitting substrate; acquiring an image of a contact surface of the transparent substrate and the polishing pad from the side of the transparent substrate facing away from the polishing pad, and recording the image as a contact image; and acquiring the contact area of the contact image and the contact image according to the contact image. The method for researching the influence of the concentration of the abrasive particles in the polishing solution on the contact degree can reduce the gap between the control mechanism of the grinding effect and the actual situation.
Description
Technical Field
The present application relates generally to the field of wafer polishing technology, and more particularly, to a method and system for studying the influence of abrasive particle concentration in a polishing solution on the contact degree.
Background
With the rise of 5G, artificial intelligence, etc. leading edge technologies, the requirements for semiconductor wafer performance are also increasing. The surface polishing smoothness of a wafer used in different application scenes needs to reach a level corresponding to the surface polishing smoothness, so that it is necessary to study what factors will affect the surface smoothness of the wafer in the polishing process. The polishing process is generally to put a wafer into a polishing liquid having grinding particles (hereinafter referred to as abrasive grains) so that the surface to be polished faces upward, and then polish it with a polishing pad. The contact area of the polishing pad and the wafer surface has a larger influence on the polishing effect, and the distribution density of abrasive particles between the polishing pad and the wafer surface, except for externally applied pressure, which has the greatest influence on the contact area, is directly determined by the concentration of the abrasive particles in the polishing solution. Therefore, researching the influence of the abrasive particle concentration on the smoothness of the wafer is finally converted into researching the influence of the abrasive particle distribution density on the contact area. The relationship between the abrasive particle distribution density and the contact area is obtained, and the method can be used for guiding the actual wafer grinding work. The prior art adopts the following modes: infrared light is incident into the light-transmitting substrate for replacing the wafer at a set angle from one side thereof, and then the emergent infrared light is obtained from the other side, and the contact area between the polishing pad and the light-transmitting substrate is estimated based on the attenuation degree of the incident infrared light, as shown in fig. 3. However, the method can only obtain the contact area value, but cannot obtain the image of the contact surface, so that the contact area value cannot be confirmed accurately, and after the contact area value is used for guiding the actual grinding of the wafer surface, the smoothness of the wafer surface is difficult to meet the corresponding requirement. Therefore, how to improve the measurement method of the contact area between the two polishing sides to obtain a more accurate relationship between the abrasive particle concentration and the smoothness of the wafer surface after polishing has become a problem to be solved in the art.
Disclosure of Invention
In view of the foregoing drawbacks or shortcomings of the prior art, it is desirable to provide a method and system for studying the effect of abrasive particle concentration in a polishing liquid on the degree of contact that can reduce the gap between the mechanism for controlling the polishing effect and the actual situation.
The specific technical scheme is as follows:
first aspect
The application provides a method for researching influence of abrasive particle concentration in polishing solution on contact degree, which comprises the following steps:
fixing the position of a light-transmitting substrate, wherein the material of the light-transmitting substrate is consistent with a wafer in the aspect of forming a contact surface with a polishing pad;
distributing abrasive particles with a certain set distribution density to a polishing pad, wherein a certain distribution density value corresponds to the concentration value of the abrasive particles in the other polishing solution corresponding to the certain distribution density value;
connecting the polishing pad to a pressure applying device, and controlling the pressure applying device to set pressure to press the polishing pad against the light-transmitting substrate;
acquiring an image of a contact surface between the polishing pad and the light-transmitting substrate from the side, facing away from the polishing pad, of the light-transmitting substrate, and recording the image as a contact image;
acquiring a corresponding contact area value according to the contact image;
transforming the numerical value of the distribution density, and respectively obtaining the numerical value of the contact area corresponding to the numerical value of the distribution density, so as to obtain the corresponding relation between the distribution density and the contact area of the abrasive particles;
and obtaining the corresponding relation between the abrasive particle concentration and the contact area according to the corresponding relation between the distribution density of the abrasive particles and the contact area.
As a further definition of the present application, the method for distributing abrasive particles with a certain set distribution density onto a polishing pad specifically includes the following steps:
adding abrasive particles into a dissolving agent to obtain a suspension with a set concentration of abrasive particles;
placing the polishing pad in the suspension, soaking at a set temperature, and taking out;
and drying the taken polishing pad to obtain the polishing pad with the abrasive particles distributed on the surface reaching the set density.
As a further limitation of the present application, the acquiring a corresponding contact area value according to the contact image specifically includes the following steps:
acquiring a control image, wherein the control image is an image acquired in the same stacking mode as that after contact when the polishing pad is not contacted with the light-transmitting substrate;
comparing the contact image with the control image, and obtaining contact pixels, wherein the contact pixels are pixel points in the contact image, and the gray scale of the pixel points is larger than that of the corresponding pixels in the control image;
and acquiring the contact area value according to the proportion of the contact pixels in the contact image and the actually acquired area of the polishing pad corresponding to the contact image when the polishing pad and the transparent substrate are stacked.
As a further definition of the present application, the placing the polishing pad in the suspension, after soaking at a set temperature, is taken out, and further includes the steps of: and (3) performing magnetic stirring on the suspension for a set time.
As a further definition of the present application, the dissolving agent is absolute ethanol.
Second aspect
The application provides a measurement system for contact area between a polishing pad and a wafer, comprising:
the light-transmitting substrate fixing frame is used for fixing the position of the light-transmitting substrate;
the pressure applying device is used for propping the polishing pad with the abrasive particles on the surface in a set distribution state on the light-transmitting substrate with set pressure;
the image shooting device is used for acquiring a contact image of the contact surface of the transparent substrate and the polishing pad from the side of the transparent substrate facing away from the polishing pad;
and the image processing device is used for acquiring the contact area of the contact image and the contact image according to the contact image.
The beneficial effects of the application are that:
in order to solve the problem that the accurate contact area between the polishing pad and the transparent substrate cannot be obtained in the prior art, the scheme provided by the application is that the transparent substrate which is made of the same material as the wafer in the aspect of forming the contact surface with the polishing pad is used for replacing an actual wafer; on the other hand, the polishing pad with the surface abrasive particles in the set distribution density is used for replacing a mode of putting the polishing pad into the polishing solution with the abrasive particles, the two methods can enable the image capturing device to be used for capturing images of the contact surface between the polishing pad and the substrate from one side of the transparent substrate, which is away from the polishing pad, and further the contact area data of the polishing pad and the substrate are directly measured according to the captured images, so that the contact area data of the polishing pad and the substrate obtained in the mode under different conditions are more accurate, and the surface smoothness of a wafer obtained for guiding the actual grinding work is closer to a set standard.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the following drawings, in which:
FIG. 1 is a flow chart of steps of a method for studying the influence of abrasive particle concentration in a polishing liquid on the contact degree according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a system for measuring the contact area between a polishing pad and a wafer according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a prior art system for measuring the contact area between a polishing pad and a wafer;
reference numerals in the drawings: 10, a light-transmitting substrate fixing frame; 1, a light-transmitting substrate; 20, a pressure applying device; 21, abrasive particles; 2, polishing pad; and 3, an image shooting device.
Detailed Description
The present application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be noted that, for convenience of description, only the portions related to the invention are shown in the drawings.
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Referring to fig. 1, a flowchart of a method for researching the influence of the concentration of abrasive particles in the polishing solution on the contact degree is provided, which specifically includes the following steps:
s1: fixing the position of a light-transmitting substrate, wherein the material of the light-transmitting substrate is consistent with a wafer in the aspect of forming a contact surface with a polishing pad;
s2: distributing abrasive particles with a certain set distribution density to a polishing pad, wherein a certain distribution density value corresponds to the concentration value of the abrasive particles in the other polishing solution corresponding to the certain distribution density value;
s3: connecting the polishing pad to a pressure applying device, and controlling the pressure applying device to set pressure to press the polishing pad against the light-transmitting substrate;
s4: acquiring an image of a contact surface between the polishing pad and the light-transmitting substrate from the side, facing away from the polishing pad, of the light-transmitting substrate, and recording the image as a contact image;
s5: acquiring a corresponding contact area value according to the contact image;
s6: transforming the numerical value of the distribution density, and respectively obtaining the numerical value of the contact area corresponding to the numerical value of the distribution density, so as to obtain the corresponding relation between the distribution density and the contact area of the abrasive particles;
s7: and obtaining the corresponding relation between the abrasive particle concentration and the contact area according to the corresponding relation between the distribution density of the abrasive particles and the contact area.
Fig. 2 is a schematic diagram of a system for measuring a contact area between a polishing pad and a wafer according to an embodiment of the present application. In fig. 2, the image capturing device 3 of the measurement system is located at the top, and the transparent substrate 1 for simulating a wafer is made of transparent material, so that a contact image of the contact surface of the transparent substrate 1 with the polishing pad 2 can be captured through the transparent substrate 1, and the contact image needs to be processed if there is a contact area with a large value in the overlapping area of the two captured images.
The method of processing is that the contact image is compared with the image when the transparent substrate 1 and the polishing pad 2 are not contacted, under the same image acquisition condition, the gray value of which pixels in the contact image is changed compared with the gray value of the pixels in the contrast image, the pixels can be judged to be the contact pixels, and then according to the proportion of the contact pixels in the contact image and the overlapping area of the transparent substrate 1 and the polishing pad 2 corresponding to the contact image, the actual contact area of the two in the overlapping area under the condition can be calculated.
It is conceivable that in the contact image, since the abrasive grains in a set distribution are provided between the light-transmitting substrate 1 and the polishing pad 2, the contact area between the two is necessarily affected by the pressure applied to the polishing pad 2 by the pressure applying device 20, and also by the abrasive grain distribution. Therefore, the value of the real contact area between the transparent substrate 1 and the polishing pad 2 under the corresponding conditions can be obtained by continuously adjusting the pressure and the distribution of the abrasive particles 21.
Specifically, since this scheme is a scheme simulating the placement of a wafer and the polishing pad into a polishing liquid having the abrasive grains 21. Therefore, it is necessary to simulate the final distribution of abrasive grains between the polishing pad 2 and the transparent substrate 1 before the polishing pad is pressed against the transparent substrate, and the method is to put the abrasive grains 21 into absolute ethanol to form a suspension, and then magnetically stir the suspension to uniformly distribute the abrasive grains 21 therein. Since the temperature affects the distribution of the abrasive grains 21 on the surface of the polishing pad 2, that is, the number of the abrasive grains 21 distributed per unit area is the same at different temperatures, the uniformity of the distribution is different, and the uniformity also affects the value of the contact area. Therefore, the temperature needs to be used as another independent variable for researching the influence factor of the contact area.
The method specifically comprises the following steps:
wiping the surface to be abutted of the light-transmitting substrate 1;
adjusting the distance between the objective lens of the pressure applying device 20 and the transparent substrate 1 to focus the objective lens on the lower surface of the transparent substrate 1, ensuring clear images, and confirming that the transparent substrate 1 is wiped;
the surface to be measured of the polishing pad 2 is fixed to the stage of the pressure applying device 20 so that it can be uniformly loaded and the contact surface formed after the loading can be captured by the image capturing device 3.
The pressure applying device 20 is used for carrying out step loading on the tested surface of the polishing pad 2 so as to form a contact surface with the transparent substrate 1, and the pressure and the image of the actual contact area of each loading are recorded.
And unloading the pressure output by the pressure applying device 20, and standing the measured surface of the polishing pad 2 for more than 5 minutes to ensure the deformation recovery of the measured surface.
The light-transmitting substrate 1 is wiped clean.
The surface to be measured of the polishing pad 2 is cleaned.
The measurement of the true contact area of the abrasive-free surface is completed.
The method for manufacturing the surface containing polishing solution abrasive particles mainly comprises the following steps:
silica abrasive particles 21 were added to absolute ethanol and magnetically stirred for 20min.
And completely soaking the surface to be tested into absolute ethyl alcohol containing silicon dioxide abrasive particles, and magnetically stirring for 10min to enable the abrasive particles to be dispersed in the absolute ethyl alcohol to be in contact with the surface to be tested of the polishing pad 2.
And horizontally taking out the tested surface of the polishing pad 2 and drying.
The surface of the polishing pad 2 containing polishing liquid abrasive grains is completed.
Measuring images of the actual contact area of the surface of the polishing pad 2 with abrasive particles at different pressures mainly comprises the steps of:
the distance between the objective lens of the image photographing device 3 and the transparent substrate is adjusted so that the objective lens focuses on the lower surface of the transparent substrate 1, thereby ensuring clear images and confirming that the transparent substrate 1 is wiped.
The surface to be measured of the polishing pad 2 which is dried in the air is placed on the stage of the pressure applying device 20 so that it can be uniformly loaded and the contact surface formed after the loading can be captured by the image capturing device 3.
The pressure applying device 20 is used for carrying out step loading on the tested surface of the polishing pad 2, so that the tested surface of the polishing pad 2 forms a contact surface with the transparent substrate 1, and the pressure and the actual contact area image of each loading are recorded.
And unloading the pressure output by the pressure applying device 20, and standing the measured surface of the polishing pad 2 for 5min to ensure that the deformation of the measured surface of the polishing pad 2 is recovered.
The light-transmitting substrate 1 is wiped clean.
The surface to be measured of the polishing pad 2 is cleaned.
Repeating the steps until all samples are detected, and recording the concentration of the silica turbid liquid corresponding to each group of contact images.
The measurement of the true contact area of the surface with abrasive particles is completed.
The extraction and comparison analysis of the real contact area mainly comprises the following steps:
the measured contact image is imported into MATLAB software, and the contact image is digitized to obtain an image matrix (each pixel point).
The loaded contact image matrix is subtracted from the unloaded control image matrix.
And carrying out binarization processing on the image obtained after subtraction.
The matrix of the contact image obtained by the recording process is an a×b matrix, c is the number of matrix points whose data is 1 (gradation increase) in the matrix, and the duty ratio is c/(a×b).
The obtained data is used to plot the pressure-real contact area curve of the measured surface of the polishing pad 2 with abrasive grains of different concentrations on the surface.
Comparing the pressure-real contact area curves of different abrasive particle concentrations, calculating the difference between the real contact area of the abrasive particle surfaces with different concentrations and the real contact area of the abrasive particle-free surfaces under each pressure, and experimental data prove that the real contact area of the measured surface of the polishing pad 2 and the transparent substrate 1 can be gradually reduced under the same pressure along with the increase of the concentration of the silica abrasive particles in the turbid liquid.
Extraction and comparison analysis of the real contact area are completed.
The foregoing description is only of the preferred embodiments of the present application and is presented as a description of the principles of the technology being utilized. It will be appreciated by persons skilled in the art that the scope of the invention referred to in this application is not limited to the specific combinations of features described above, but it is intended to cover other embodiments in which any combination of features described above or equivalents thereof is possible without departing from the spirit of the invention. Such as the above-described features and technical features having similar functions (but not limited to) disclosed in the present application are replaced with each other.
Claims (6)
1. A method for studying the effect of abrasive particle concentration in a polishing liquid on the degree of contact, comprising the steps of:
fixing the position of a light-transmitting substrate, wherein the material of the light-transmitting substrate is consistent with a wafer in the aspect of forming a contact surface with a polishing pad;
distributing abrasive particles with a certain set distribution density to a polishing pad, wherein a certain distribution density value corresponds to the concentration value of the abrasive particles in the other polishing solution corresponding to the certain distribution density value;
connecting the polishing pad to a pressure applying device, and controlling the pressure applying device to set pressure to press the polishing pad against the light-transmitting substrate;
acquiring an image of a contact surface between the polishing pad and the light-transmitting substrate from the side, facing away from the polishing pad, of the light-transmitting substrate, and recording the image as a contact image;
acquiring a corresponding contact area value according to the contact image;
transforming the numerical value of the distribution density, and respectively obtaining the numerical value of the contact area corresponding to the numerical value of the distribution density, so as to obtain the corresponding relation between the distribution density and the contact area of the abrasive particles;
and obtaining the corresponding relation between the abrasive particle concentration and the contact area according to the corresponding relation between the distribution density of the abrasive particles and the contact area.
2. The method for studying the influence of the concentration of abrasive grains in a polishing liquid on the contact degree according to claim 1, wherein the abrasive grains having a certain set distribution density are distributed on the polishing pad, comprising the steps of:
adding abrasive particles into a dissolving agent to obtain a suspension with a set concentration of abrasive particles;
placing the polishing pad in the suspension, soaking at a set temperature, and taking out;
and drying the taken polishing pad to obtain the polishing pad with the abrasive particles distributed on the surface reaching the set density.
3. The method for studying the influence of the concentration of abrasive grains in a polishing liquid on the contact degree according to claim 1, wherein the step of obtaining the corresponding contact area value from the contact image comprises the steps of:
acquiring a control image, wherein the control image is an image acquired in the same stacking mode as that after contact when the polishing pad is not contacted with the light-transmitting substrate;
comparing the contact image with the control image, and obtaining contact pixels, wherein the contact pixels are pixel points in the contact image, and the gray scale of the pixel points is larger than that of the corresponding pixels in the control image;
and acquiring the contact area value according to the proportion of the contact pixels in the contact image and the actually acquired area of the polishing pad corresponding to the contact image when the polishing pad and the transparent substrate are stacked.
4. The method for studying the influence of the concentration of abrasive grains in a polishing liquid on the contact degree according to claim 2, wherein the step of placing the polishing pad in the suspension, immersing at a set temperature, and then taking out the polishing pad comprises the steps of: and (3) performing magnetic stirring on the suspension for a set time.
5. The method for studying the influence of the concentration of abrasive grains in a polishing liquid on the contact degree according to claim 2 or 4, wherein the dissolving agent is absolute ethyl alcohol.
6. A system for measuring a contact area between a polishing pad and a wafer, comprising:
a light-transmitting substrate fixing frame (10), wherein the light-transmitting substrate fixing frame (10) is used for fixing the position of the light-transmitting substrate (1);
a pressure applying device (20), wherein the pressure applying device (20) is used for pressing the polishing pad (2) with the abrasive particles (21) on the surface in a set distribution state against the light-transmitting substrate (1) with a set pressure;
the image shooting device (3) is used for acquiring a contact image of the contact surface of the light-transmitting substrate (1) and the polishing pad (2) from the side of the light-transmitting substrate facing away from the polishing pad;
and the image processing device is used for acquiring the contact area value of the contact image and the contact image.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410132088.6A CN117754451A (en) | 2024-01-30 | 2024-01-30 | Method and system for researching influence of abrasive particle concentration in polishing solution on contact degree |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410132088.6A CN117754451A (en) | 2024-01-30 | 2024-01-30 | Method and system for researching influence of abrasive particle concentration in polishing solution on contact degree |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117754451A true CN117754451A (en) | 2024-03-26 |
Family
ID=90310613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410132088.6A Pending CN117754451A (en) | 2024-01-30 | 2024-01-30 | Method and system for researching influence of abrasive particle concentration in polishing solution on contact degree |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117754451A (en) |
-
2024
- 2024-01-30 CN CN202410132088.6A patent/CN117754451A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7315642B2 (en) | System and method for measuring thin film thickness variations and for compensating for the variations | |
| CN107833843B (en) | Defect source analysis method and system, and defect detection device | |
| CN111986170A (en) | Defect detection algorithm based on Mask R-CNN (deep neural network) | |
| CN116342597B (en) | Method and system for detecting electroplating processing defects on surface of automobile part | |
| CN116773548B (en) | Wafer surface defect detection method and system | |
| Ma et al. | An automatic detection method of Mura defects for liquid crystal display | |
| JP4416825B2 (en) | Image inspection processing apparatus, image inspection processing method, program, and recording medium | |
| KR101677070B1 (en) | System and Method for Automatically Detecting a Mura Defect using Morphological Image Processing and Labeling | |
| CN112014407A (en) | Method for detecting surface defects of integrated circuit wafer | |
| CN115274486A (en) | Semiconductor surface defect identification method | |
| CN117754451A (en) | Method and system for researching influence of abrasive particle concentration in polishing solution on contact degree | |
| KR100271261B1 (en) | Image data processing method and image data processing apparatus | |
| CN112053299B (en) | Image processing method based on colloidal gold immunochromatography | |
| US7003148B2 (en) | Detection of an end point of polishing a substrate | |
| CN111597503B (en) | Calculation method of colloidal gold peak value under multiple modes | |
| Corbellini et al. | Exposure-tolerant imaging solution for cultural heritage monitoring | |
| TWI238358B (en) | Optical mouse with shielding compensation, and the method for shielding compensation | |
| TW202240151A (en) | Wafer processing system and rework method thereof | |
| Yatagai et al. | Automatic flatness tester for very large scale integrated circuit wafers | |
| Chen et al. | In-situ volumetric topography of IC chips for defect detection using infrared confocal measurement with active structured light | |
| JP2005315748A (en) | Data compression method, defect inspection method, and defect inspection device | |
| Ko et al. | Anisotropic diffusion based micro-crack inspection in polycrystalline solar wafers | |
| CN117115146B (en) | Method for detecting quality of coating film on surface of silicon carbide semiconductor | |
| Yinong et al. | Machine Vision based Micro-crack Inspection in Thin-film Solar Cell Panel | |
| JP2005025503A (en) | Filter design method, filter, defect inspection method and defect inspection device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |