CN117750863A - Composite material, preparation method of composite material, photoelectric device and electronic equipment - Google Patents
Composite material, preparation method of composite material, photoelectric device and electronic equipment Download PDFInfo
- Publication number
- CN117750863A CN117750863A CN202211113464.4A CN202211113464A CN117750863A CN 117750863 A CN117750863 A CN 117750863A CN 202211113464 A CN202211113464 A CN 202211113464A CN 117750863 A CN117750863 A CN 117750863A
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- composite material
- metal
- metal oxide
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 168
- 238000002360 preparation method Methods 0.000 title claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 301
- 239000004065 semiconductor Substances 0.000 claims abstract description 198
- 239000010410 layer Substances 0.000 claims abstract description 143
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 126
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 126
- 239000002346 layers by function Substances 0.000 claims abstract description 70
- 239000011148 porous material Substances 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims description 122
- -1 (4-phenyl) (4-butylphenyl) amine Chemical class 0.000 claims description 83
- 239000002096 quantum dot Substances 0.000 claims description 58
- 230000005693 optoelectronics Effects 0.000 claims description 52
- 229910000000 metal hydroxide Inorganic materials 0.000 claims description 51
- 150000004692 metal hydroxides Chemical class 0.000 claims description 51
- 239000011259 mixed solution Substances 0.000 claims description 49
- 239000002904 solvent Substances 0.000 claims description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 39
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 35
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 28
- 150000003839 salts Chemical class 0.000 claims description 28
- 239000002243 precursor Substances 0.000 claims description 26
- 239000003513 alkali Substances 0.000 claims description 25
- 239000007983 Tris buffer Substances 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 19
- 239000011787 zinc oxide Substances 0.000 claims description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 14
- 239000011258 core-shell material Substances 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 14
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 12
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 11
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 10
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 10
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- RKVIAZWOECXCCM-UHFFFAOYSA-N 2-carbazol-9-yl-n,n-diphenylaniline Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N1C2=CC=CC=C2C2=CC=CC=C21)C1=CC=CC=C1 RKVIAZWOECXCCM-UHFFFAOYSA-N 0.000 claims description 7
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 claims description 7
- XSUNFLLNZQIJJG-UHFFFAOYSA-N 2-n-naphthalen-2-yl-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N(C=1C=CC=CC=1)C=1C=C2C=CC=CC2=CC=1)C1=CC=CC=C1 XSUNFLLNZQIJJG-UHFFFAOYSA-N 0.000 claims description 7
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 7
- 239000005751 Copper oxide Substances 0.000 claims description 7
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 7
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 7
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 7
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 7
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims description 7
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 7
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 7
- 229920000123 polythiophene Polymers 0.000 claims description 7
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 7
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 7
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 claims description 6
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 6
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims description 6
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 claims description 6
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 6
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 6
- 239000004305 biphenyl Substances 0.000 claims description 6
- 239000003575 carbonaceous material Substances 0.000 claims description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- SKEDXQSRJSUMRP-UHFFFAOYSA-N lithium;quinolin-8-ol Chemical compound [Li].C1=CN=C2C(O)=CC=CC2=C1 SKEDXQSRJSUMRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 6
- 239000002798 polar solvent Substances 0.000 claims description 6
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 235000010290 biphenyl Nutrition 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- ZTLUNQYQSIQSFK-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]naphthalen-1-amine Chemical compound C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC2=CC=CC=C12 ZTLUNQYQSIQSFK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 claims description 4
- XKEFYDZQGKAQCN-UHFFFAOYSA-N 1,3,5-trichlorobenzene Chemical compound ClC1=CC(Cl)=CC(Cl)=C1 XKEFYDZQGKAQCN-UHFFFAOYSA-N 0.000 claims description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 claims description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- 229940093475 2-ethoxyethanol Drugs 0.000 claims description 3
- IPUDBCXGMBSQGH-UHFFFAOYSA-N 2-methoxybutan-1-ol Chemical compound CCC(CO)OC IPUDBCXGMBSQGH-UHFFFAOYSA-N 0.000 claims description 3
- FWXNJWAXBVMBGL-UHFFFAOYSA-N 9-n,9-n,10-n,10-n-tetrakis(4-methylphenyl)anthracene-9,10-diamine Chemical compound C1=CC(C)=CC=C1N(C=1C2=CC=CC=C2C(N(C=2C=CC(C)=CC=2)C=2C=CC(C)=CC=2)=C2C=CC=CC2=1)C1=CC=C(C)C=C1 FWXNJWAXBVMBGL-UHFFFAOYSA-N 0.000 claims description 3
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 241000764773 Inna Species 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 claims description 3
- 102000003978 Tissue Plasminogen Activator Human genes 0.000 claims description 3
- 108090000373 Tissue Plasminogen Activator Proteins 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- XXLJGBGJDROPKW-UHFFFAOYSA-N antimony;oxotin Chemical compound [Sb].[Sn]=O XXLJGBGJDROPKW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 239000004917 carbon fiber Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 3
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 3
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 3
- 150000002220 fluorenes Chemical class 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 150000002471 indium Chemical class 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 3
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 claims description 3
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 claims description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 3
- 150000003220 pyrenes Chemical class 0.000 claims description 3
- 229940071182 stannate Drugs 0.000 claims description 3
- 125000005402 stannate group Chemical group 0.000 claims description 3
- 235000021286 stilbenes Nutrition 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 3
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 159000000009 barium salts Chemical class 0.000 claims description 2
- 159000000003 magnesium salts Chemical class 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 17
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000005525 hole transport Effects 0.000 description 52
- 238000002347 injection Methods 0.000 description 35
- 239000007924 injection Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 19
- 239000003446 ligand Substances 0.000 description 10
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- GDXTWKJNMJAERW-UHFFFAOYSA-J molybdenum(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Mo+4] GDXTWKJNMJAERW-UHFFFAOYSA-J 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000011056 performance test Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000004062 sedimentation Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 4
- 239000011609 ammonium molybdate Substances 0.000 description 4
- 235000018660 ammonium molybdate Nutrition 0.000 description 4
- 229940010552 ammonium molybdate Drugs 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 2
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 2
- ZPHQFGUXWQWWAA-UHFFFAOYSA-N 9-(2-phenylphenyl)carbazole Chemical group C1=CC=CC=C1C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 ZPHQFGUXWQWWAA-UHFFFAOYSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 150000003904 phospholipids Chemical class 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 2
- ZDPHROOEEOARMN-UHFFFAOYSA-N undecanoic acid Chemical compound CCCCCCCCCCC(O)=O ZDPHROOEEOARMN-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 1
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- FAPCZAUMFXUDMS-UHFFFAOYSA-N 4-bromo-3-(dibromomethyl)-2-hydroxy-2h-furan-5-one Chemical compound OC1OC(=O)C(Br)=C1C(Br)Br FAPCZAUMFXUDMS-UHFFFAOYSA-N 0.000 description 1
- LGDCSNDMFFFSHY-UHFFFAOYSA-N 4-butyl-n,n-diphenylaniline Chemical compound C1=CC(CCCC)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 LGDCSNDMFFFSHY-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- RBFSUOVKQODUII-UHFFFAOYSA-N CCCCCCCCC1(CCCCCCCC)c2cc(ccc2-c2ccc(cc12)-c1ccc(Nc2ccc(cc2)C(C)CC)cc1)-c1ccccc1 Chemical compound CCCCCCCCC1(CCCCCCCC)c2cc(ccc2-c2ccc(cc12)-c1ccc(Nc2ccc(cc2)C(C)CC)cc1)-c1ccccc1 RBFSUOVKQODUII-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- GHVNFZFCNZKVNT-UHFFFAOYSA-N Decanoic acid Natural products CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 238000005727 Friedel-Crafts reaction Methods 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910001417 caesium ion Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 238000001748 luminescence spectrum Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000005374 membrane filtration Methods 0.000 description 1
- 238000001471 micro-filtration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 238000001728 nano-filtration Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- AOPCKOPZYFFEDA-UHFFFAOYSA-N nickel(2+);dinitrate;hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O AOPCKOPZYFFEDA-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000001223 reverse osmosis Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 1
Abstract
The application discloses a composite material, a preparation method of the composite material, a photoelectric device and electronic equipment, wherein the composite material comprises an organic semiconductor material and a metal oxide semiconductor material with a porous structure, at least part of the organic semiconductor material is positioned at a pore of the metal oxide semiconductor material, so that the composite material has good chemical stability, thermal stability and high carrier mobility, and in the photoelectric device, at least part of a film layer in a carrier functional layer is made of the composite material containing the organic semiconductor material and the metal oxide semiconductor material with the porous structure, thereby being beneficial to improving the photoelectric performance and service life of the photoelectric device.
Description
Technical Field
The application relates to the technical field of photoelectricity, in particular to a composite material, a preparation method of the composite material, a photoelectric device and electronic equipment.
Background
The metal oxide is a compound formed by combining metal elements and oxygen elements, and after the metal oxide is nanocrystallized, the metal oxide has small-size effect, surface and interface effect, quantum dot size effect and macroscopic quantum tunnel effect due to the characteristics of small size, large specific surface area and many surface active centers, so that the metal oxide is widely applied to high-efficiency catalysts, batteries, photoelectric devices, super capacitors, energy storage devices, magnetic devices and optical devices.
Taking an example of an optoelectronic device, the optoelectronic device includes, but is not limited to, an Organic Light-Emitting Diode (OLED) and a quantum dot Light-Emitting Diode (Quantum Dot Light Emitting Diodes, QLED), and a metal oxide may be used to prepare a carrier functional layer of the optoelectronic device, and compared to an Organic carrier functional material, the chemical stability and thermal stability of the carrier functional material based on the metal oxide are better, but because the metal oxide has a surface defect state (such as oxygen vacancies, etc.), the carrier mobility of the metal oxide is lower than that of some Organic carrier functional materials. Accordingly, there are disadvantages in the organic carrier functional material and the metal oxide-based inorganic carrier functional material, respectively.
Disclosure of Invention
The application discloses a composite material, a preparation method of the composite material, an optoelectronic device and electronic equipment, and provides the composite material with good chemical stability, thermal stability and high carrier mobility.
The technical scheme of the application is as follows:
in a first aspect, the present application provides a composite material comprising an organic semiconductor material and a metal oxide semiconductor material having a porous structure, at least a portion of the organic semiconductor material being located at pores of the metal oxide semiconductor material.
Optionally, the composite material is composed of the organic semiconductor material and the metal oxide semiconductor material.
Optionally, in the composite material, the organic semiconductor material: the mass ratio of the metal oxide semiconductor material is 1: (0.01-0.1);
and/or the metal oxide semiconductor material has an average particle diameter of 15nm to 30nm.
Optionally, the metal oxide semiconductor material is selected from the group consisting of nickel oxide, molybdenum oxide, tungsten oxide, chromium oxide, vanadium oxide, copper oxide, znO, tiO 2 、SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 At least one of TiLiO, znGaO, znAlO, znMgO, znSnO, znLiO, inSnO, alZnO, znOCl, znOF or ZnMgLiO;
And/or the organic semiconductor material is selected from poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine), 3-hexyl-substituted polythiophene, poly (9-vinylcarbazole), poly [ bis (4-phenyl) (4-butylphenyl) amine ], poly (N, N '-bis (4-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine-CO-9, 9-dioctylfluorene), 4',4 "-tris (carbazole-9-yl) triphenylamine, 4' -bis (9-carbazole) biphenyl, N '-diphenyl-N, N' -bis (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonic acid), 4 '-tris (N-3-methylphenyl-N-phenylamino) triphenylamine, 4' -tris [ 2-naphthylphenylamino ] triphenylamine, 2,3,5, 6-tetrafluoro-7, 7', 8' -tetracyanodimethyl p-benzoquinone, 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazabenzophenanthrene, 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, 4, 7-diphenyl-1, 10-phenanthroline, at least one of 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline, 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene or 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-triazole.
In a second aspect, the present application also provides a method for preparing a composite material, comprising the steps of:
Providing a first mixed solution comprising an organic semiconductor material and a metal oxide semiconductor material having a porous structure; and
and the first mixed solution reacts to obtain the composite material.
Optionally, in the first mixed solution, the organic semiconductor material: the mass ratio of the metal oxide semiconductor material is 1: (0.005-0.1);
and/or the first mixed solution further comprises a first solvent, wherein the first solvent is selected from at least one of toluene, chloroform, carbon tetrachloride, chlorobenzene, o-dichlorobenzene, p-dichlorobenzene or 1,3, 5-trichlorobenzene;
and/or the reaction temperature of the first mixed solution is 40-120 ℃, and the initial pH of the first mixed solution is 9-12.
Optionally, the preparation method of the metal oxide semiconductor material comprises the following steps:
providing a metal hydroxide solution, adding hydrogen peroxide into the metal hydroxide solution to obtain a second mixed solution, and reacting the second mixed solution to obtain metal hydroxide with a porous structure; and
and carrying out heat treatment on the metal hydroxide with the porous structure in an oxygen atmosphere to obtain the metal oxide with the porous structure.
Optionally, in the step of adding hydrogen peroxide to the metal hydroxide solution to obtain a second mixed solution, metal hydroxide in the metal hydroxide solution: the mass ratio of the hydrogen peroxide is 1: (0.36-7.2);
And/or the reaction temperature of the second mixed solution is 25 ℃ to 60 ℃;
and/or, the heat treatment of the metal hydroxide with the porous structure is carried out under the oxygen atmosphere, and the method comprises the following steps: and placing the metal hydroxide with the porous structure into a reaction device, and roasting the metal hydroxide with the porous structure in an oxygen atmosphere, wherein the roasting temperature is 120-250 ℃.
Optionally, the providing a metal hydroxide solution comprises the steps of: providing a metal salt precursor solution and an alkali solution, and mixing the metal salt precursor solution and the alkali solution to obtain a third mixed solution, wherein the third mixed solution reacts to obtain the metal hydroxide solution.
Optionally, in the step of mixing the metal salt precursor solution and the alkali solution to obtain a third mixed solution, metal ions in the metal salt precursor solution: the molar ratio of hydroxyl ions in the alkali liquor is 1: (0.5-3.0);
and/or the initial pH of the third mixed solution is 9 to 14, and the reaction temperature of the third mixed solution is 25 to 80 ℃;
and/or the solvent of the metal salt precursor solution is a second solvent, the solvent in the alkali liquor is a third solvent, and the second solvent and the third solvent are selected from polar solvents;
And/or the metal salt precursor in the metal salt precursor solution is selected from at least one of nickel halide, nickel nitrate, nickel sulfate, nickel sulfamate, nickel acetylacetonate, tungstate, molybdate, copper acetate, copper sulfate, copper nitrate, vanadate, vanadium halide, chromium halide, chromate, copper halide, zinc halide, zincate, titanium halide, titanate, tin halide, stannate, barium halide, barium salt, tantalum halide, tantalate, zirconium halide, zirconate, lithium halide, gallium halide, gallate, aluminum halide, aluminate, magnesium halide, magnesium salt, indium halide, or indium salt;
and/or the alkali source in the alkali liquor is at least one selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide or tetrabutyl ammonium hydroxide.
Alternatively, the second solvent and the third solvent are independently selected from at least one of ethanol, ethylene glycol, glycerol, isopropanol, butanol, pentanol, octanol, N-methylformamide, N-dimethylformamide, N-methylpyrrolidone, 2-methoxyethanol, 2-ethoxyethanol, 2-methoxybutanol, or dimethylsulfoxide.
In a third aspect, the present application provides an optoelectronic device comprising:
an anode;
a cathode disposed opposite the anode;
a light-emitting layer disposed between the anode and the cathode; and
a carrier functional layer disposed between the anode and the light emitting layer and/or between the cathode and the light emitting layer;
wherein the material of at least part of the film layer in the carrier functional layer is the composite material according to any one of the first aspect or the composite material prepared by the preparation method according to any one of the second aspect.
Optionally, the material of the light emitting layer is selected from organic light emitting materials or quantum dots;
wherein the organic luminescent material is selected from at least one of a biaryl anthracene derivative, a stilbene aromatic derivative, a pyrene derivative or a fluorene derivative, a TBPe fluorescent material, a TTPA fluorescent material, a TBRb fluorescent material or a DBP fluorescent material;
the quantum dots are selected from at least one of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots;
when the quantum dot is selected from a single component quantum dot or a core-shell structure quantum dot, the material of the single component quantum dot, the material of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are selected from at least one of group II-VI compound, group III-V compound, group IV-VI compound, or group I-III-VI compound, independently of each other, wherein the group II-VI compound is selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe or HgZnSTe, the group III-V compound is selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb, the group IV-VI compound is selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe or snpb, and the group I-III-VI compound is selected from at least one of CuInS, cuInSe, or AgInS;
And/or the materials of the anode and the cathode are selected from at least one of metal, carbon material or metal oxide independently of each other, the metal is selected from at least one of Al, ag, cu, mo, au, ba, ca or Mg, the carbon material is selected from at least one of graphite, carbon nanotube, graphene or carbon fiber, and the metal oxide is selected from at least one of indium tin oxide, fluorine doped tin oxide, tin antimony oxide, aluminum doped zinc oxide, gallium doped zinc oxide, indium doped zinc oxide or magnesium doped zinc oxide.
Optionally, the carrier functional layer includes a hole functional layer, the hole functional layer is disposed between the anode and the light emitting layer, the material of at least part of the film layer in the hole functional layer is the composite material according to any one of the first aspect or the composite material prepared by any one of the second aspect, the metal oxide semiconductor material included in the hole functional layer is at least one selected from nickel oxide, molybdenum oxide, tungsten oxide, chromium oxide, vanadium oxide, or copper oxide, the organic semiconductor material contained in the hole functional layer is selected from the group consisting of poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine), 3-hexyl-substituted polythiophene, poly (9-vinylcarbazole), poly [ bis (4-phenyl) (4-butylphenyl) amine ], poly (N, N '-bis (4-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine-CO-9, 9-dioctylfluorene), 4',4 "-tris (carbazole-9-yl) triphenylamine, 4' -bis (9-carbazole) biphenyl, N '-diphenyl-N, N' -bis (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, poly (3, 4-ethylenedioxythiophene) at least one of poly (styrenesulfonic acid), 4 '-tris (N-3-methylphenyl-N-phenylamino) triphenylamine, 4' -tris [ 2-naphthylphenylamino ] triphenylamine, 2,3,5, 6-tetrafluoro-7, 7', 8' -tetracyanodimethyl-p-benzoquinone, or 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazabenzofis;
And/or the carrier functional layer comprises an electronic functional layer, the electronic functional layer is arranged between the cathode and the light-emitting layer, the material of at least part of the film layers in the electronic functional layer is the composite material according to any one of the first aspect or the composite material prepared by any one of the second aspect, and the metal oxide semiconductor material contained in the electronic functional layer is selected from ZnO and TiO 2 、SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 At least one of TiLiO, znGaO, znAlO, znMgO, znSnO, znLiO, inSnO, alZnO, znOCl, znOF or ZnMgLiO, the organic semiconductor material contained in the electronic functional layer is selected from at least one of 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, 4, 7-diphenyl-1, 10-phenanthroline, 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene or 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-triazole.
In a fourth aspect, the present application provides an electronic device comprising an optoelectronic device according to any one of the third aspects.
The application provides a composite material, a preparation method of the composite material, a photoelectric device and electronic equipment, and the preparation method has the following technical effects:
In the composite material, the composite material comprises an organic semiconductor material and a metal oxide semiconductor material with a porous structure, at least part of the organic semiconductor material is positioned at the pores of the metal oxide semiconductor material, the metal oxide semiconductor material endows the composite material with good chemical stability and thermal stability, and the composite material has good heat conduction performance based on the porous structure of the metal oxide semiconductor material, and the organic semiconductor material can improve the carrier mobility of the composite material, so that the composite material has good chemical stability, thermal stability and high carrier mobility.
In the preparation method of the composite material, the first mixed solution comprising the organic semiconductor material and the metal oxide semiconductor material with the porous structure is provided, and the first mixed solution reacts to obtain the composite material, so that the preparation method has the advantages of simple preparation procedure, controllable process conditions and suitability for large-scale industrial production, and the prepared composite material has good chemical stability, thermal stability and high carrier mobility.
In the photoelectric device, at least part of the film layers in the carrier functional layer are made of the composite material or the composite material prepared by the preparation method of the composite material, and the metal oxide semiconductor material endows the film layers with good chemical stability, thermal stability and thermal conductivity, so that the organic semiconductor material can improve the carrier mobility of the film layers, and the film layers have good thermal stability, good chemical stability and high carrier mobility, thereby improving the photoelectric performance, service life and working stability of the photoelectric device.
The photoelectric device is applied to the electronic equipment, and is beneficial to improving the display effect and prolonging the service life of the electronic equipment.
Drawings
Technical solutions and other advantageous effects of the present application will be made apparent from the following detailed description of specific embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a schematic flow chart of a method for preparing a composite material according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a first photoelectric device provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a second photoelectric device provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. In addition, any methods and materials similar or equivalent to those described herein can be used in the present invention. The preferred methods and materials described herein are illustrative only and should not be construed as limiting the scope of the present application.
The following description of the embodiments is not intended to limit the preferred embodiments. In addition, in the description of the present application, the term "comprising" means "including but not limited to". Various embodiments of the present application may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the invention; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that a description of a range from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the ranges, such as 1, 2, 3, 4, 5, and 6, wherever applicable. In addition, whenever a numerical range is referred to herein, it is meant to include any reference number (fractional or integer) within the indicated range.
In the present application, "and/or" describing the association relationship of the association object means that there may be three relationships, for example, a and/or B may mean: a alone, a and B together, and B alone. Wherein A, B may be singular or plural.
In the present application, "at least one" means one or more, and "plurality" means two or more. "at least one", "at least one" or the like refer to any combination of these items, including any combination of single or plural species. For example, "at least one (individual) of a, b, or c," or "at least one (individual) of a, b, and c," may each represent: a, b, c, a-b (i.e., a and b), a-c, b-c, or a-b-c, wherein a, b, c may be single or multiple, respectively.
The embodiment of the application provides a composite material, which comprises an organic semiconductor material and a metal oxide semiconductor material with a porous structure, wherein at least part of the organic semiconductor material is positioned at the pores of the metal oxide semiconductor material.
In the composite material of the embodiment of the application, since the metal oxide semiconductor material is of a porous structure, at least part of the organic semiconductor material can be embedded into pores of the metal oxide semiconductor material, so that the effective contact area between the metal oxide semiconductor material and the organic semiconductor material is increased, the composite material has the performance advantages of both the metal oxide semiconductor material and the organic semiconductor material, and the specific performance is as follows: the metal oxide semiconductor material endows the composite material with good chemical stability and thermal stability, and the composite material has good heat conduction performance based on the porous structure of the metal oxide semiconductor material; the organic semiconductor material can improve the carrier mobility of the composite material, so that the composite material has good chemical stability, thermal stability and high carrier mobility.
In some embodiments of the present application, the composite material is comprised of an organic semiconductor material and a metal oxide semiconductor material.
In order to provide a composite material with a better and desirable carrier mobility, in some embodiments of the present application, the organic semiconductor material: the mass ratio of the metal oxide semiconductor material is 1: (0.01 to 0.1), for example, 1: (0.01-0.03), 1: (0.03-0.05), 1: (0.05 to 0.08), or 1: (0.08-0.1). Organic semiconductor material: the mass ratio of the metal oxide semiconductor material is exemplified as 1:0.01, 1:0.02, 1:0.03, 1:0.04, 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09 or 1:0.1.
in some embodiments of the present application, the metal oxide semiconductor material has an average particle size of 15nm to 30nm, which may be, for example, 15nm to 17nm, 17nm to 20nm, 20nm to 22nm, 22nm to 25nm, 25nm to 28nm, or 28nm to 30nm. The average particle diameter of the metal oxide semiconductor material is exemplified by 15nm, 20nm, 25nm, or 30nm.
In some embodiments of the present application, the metal oxide semiconductor material is selected from the group consisting of nickel oxide, molybdenum oxide, tungsten oxide, chromium oxide, vanadium oxide, copper oxide, znO, tiO 2 、SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 At least one of TiLiO, znGaO, znAlO, znMgO, znSnO, znLiO, inSnO, alZnO, znOCl, znOF or ZnMgLiO;
and/or the organic semiconductor material is selected from Poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB for short, CAS number 220797-16-0), 3-hexyl-substituted polythiophene (CAS number 104934-50-1), poly (9-vinylcarbazole) (PVK for short, CAS number 25067-59-8), poly [ bis (4-phenyl) (4-butylphenyl) amine ] (Poly-TPD for short, CAS number 472960-35-3), poly (N, N '-bis (4-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine-CO-9, 9-dioctylfluorene) (PFB for short, CAS No. 223569-28-6), 4',4 "-tris (carbazol-9-yl) triphenylamine (abbreviated TCTA, CAS No. 139092-78-7), 4' -bis (9-carbazol) biphenyl (abbreviated CBP, CAS No. 58328-31-7), N '-diphenyl-N, N' -bis (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine (abbreviated TPD, CAS No. 65181-78-4), N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (abbreviated NPB, CAS No. 123847-85-8), poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonic acid) (PEDOT: PSS, CAS number 155090-83-8), 4 '-tris (N-3-methylphenyl-N-phenylamino) triphenylamine (CAS number 124729-98-2), 4' -tris [ 2-naphthylphenylamino ] triphenylamine (CAS number 185690-41-9), 2,3,5, 6-tetrafluoro-7, 7', 8' -tetracyanodimethyl-p-benzoquinone (CAS number 29261-4), 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazabenzophenanthrene (CAS number 105598-27-4), 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, 4, 7-diphenyl-1, 10-phenanthroline, 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline or 1,3, 5-tris (1-phenyl-1H-benzoimidazole-2-t-butyl) -phenyl-4- (4-phenyl) -4-H-triazole, at least in one of 2,3,6, 10-tris (1-phenyl-1H-2-phenyl) -4.
As one example, the metal oxide semiconductor material is an oxide of nickel and the organic semiconductor material is TFB.
As another example, the metal oxide semiconductor material is an oxide of nickel and the organic semiconductor material is PVK.
As another example, the metal oxide semiconductor material is an oxide of molybdenum and the organic semiconductor material is TFB.
The embodiment of the application also provides a preparation method of the composite material, which can be used for preparing the composite material, as shown in fig. 1, and comprises the following steps:
s1, providing a first mixed solution comprising an organic semiconductor material and a metal oxide semiconductor material with a porous structure;
s2, reacting the first mixed solution to obtain the composite material.
In the preparation method, at least part of the organic semiconductor material can be embedded in the pores of the metal oxide semiconductor material, so that the effective contact area between the organic semiconductor material and the metal oxide semiconductor material is effectively increased, and the prepared composite material has the characteristics of high stability and high carrier mobility.
Specifically, in step S1, the method for preparing the first mixed solution may include the steps of: providing an organic semiconductor material and a metal oxide semiconductor material with a porous structure, dispersing the organic semiconductor material and the metal oxide semiconductor material in a first solvent, and mixing to obtain a first mixed solution. The method for preparing the first mixed liquor may further include the steps of: providing an organic semiconductor material solution, adding a metal oxide semiconductor material with a porous structure into the organic semiconductor material solution, and mixing to obtain a first mixed solution, wherein the solvent of the organic semiconductor material solution is a first solvent. The method for preparing the first mixed liquor may further include the steps of: providing a metal oxide semiconductor material solution, adding an organic semiconductor material into the metal oxide semiconductor material solution, and mixing to obtain a first mixed solution, wherein the solvent of the metal oxide semiconductor material solution is a first solvent. The method for preparing the first mixed liquor may further include the steps of: providing a metal oxide semiconductor material solution and an organic semiconductor material solution, and mixing the metal oxide semiconductor material solution and the organic semiconductor material solution to obtain a first mixed solution, wherein a solvent of the metal oxide semiconductor material solution and a solvent of the organic semiconductor material solution are mutually soluble. It should be noted that the detailed features of the organic semiconductor material and the metal oxide semiconductor material are described with reference to the foregoing composite materials.
In some embodiments of the present application, the first mixed liquor further comprises a first solvent selected from at least one of toluene, chloroform, carbon tetrachloride, chlorobenzene, o-dichlorobenzene, p-dichlorobenzene, or 1,3, 5-trichlorobenzene.
In some embodiments of the present application, the organic semiconductor material in the first mixed liquor: the mass ratio of the metal oxide semiconductor material is 1: (0.01 to 0.1), for example, 1: (0.01-0.03), 1: (0.03-0.05), 1: (0.05 to 0.08), or 1: (0.08-0.1). Organic semiconductor material: the mass ratio of the metal oxide semiconductor material is exemplified as 1:0.01, 1:0.02, 1:0.03, 1:0.04, 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09 or 1:0.1.
in some embodiments of the present application, the reaction temperature of the first mixed liquid in step S2 is 40 ℃ to 120 ℃, for example, may be 40 ℃ to 60 ℃, 60 ℃ to 80 ℃, 80 ℃ to 100 ℃, or 100 ℃ to 120 ℃, exemplified by 40 ℃, 60 ℃, 80 ℃, 100 ℃, or 120 ℃. The initial pH of the first mixed liquor is 9 to 12, for example 9 to 10, 10 to 11, or 11 to 12, exemplified by 9, 10, 11 or 12.
As one example, a method of preparing a composite material includes the steps of: providing an organic semiconductor material solution, wherein a solvent of the organic semiconductor material solution is a first solvent, and adding a metal oxide semiconductor material into the organic semiconductor material solution until the organic semiconductor material: the mass ratio of the metal oxide semiconductor material is 1: (0.005-0.1), and then stirring and reacting for 10-120 min at 40-120 ℃ to obtain the composite material.
As another example, a method of preparing a composite material includes the steps of: providing a metal oxide semiconductor material solution, wherein a solvent of the metal oxide semiconductor material solution is a first solvent, adding an organic semiconductor material into the metal oxide semiconductor material solution, and adding the organic semiconductor material into the metal oxide semiconductor material solution: the mass ratio of the metal oxide semiconductor material is 1: (0.005-0.1), and then stirring and reacting for 10-120 min at 40-120 ℃ to obtain the composite material.
In some embodiments of the present application, a method of preparing a metal oxide semiconductor material includes the steps of:
s101, providing a metal hydroxide solution, adding hydrogen peroxide into the metal hydroxide solution to obtain a second mixed solution, and reacting the second mixed solution to obtain metal hydroxide with a porous structure;
s102, performing heat treatment on the metal hydroxide with the porous structure in an oxygen atmosphere to obtain the metal oxide with the porous structure.
In the preparation method of the metal oxide semiconductor material, hydrogen peroxide is firstly adopted to treat metal hydroxide to obtain porous metal hydroxide, then the metal hydroxide with a porous structure is subjected to heat treatment in an oxygen atmosphere to obtain porous metal oxide rich in hydroxyl groups and oxygen vacancies, the organic semiconductor material can form hydrogen bonds with the hydroxyl groups of the porous metal oxide, the connection compactness between the metal oxide semiconductor material and the organic semiconductor material is improved, and the stability of the composite material is effectively improved.
Specifically, in step S101, the preparation method of the metal hydroxide solution includes the steps of: providing a metal salt precursor solution and an alkali solution, mixing the metal salt precursor solution and the alkali solution to obtain a third mixed solution, and reacting the third mixed solution to obtain a metal hydroxide solution.
As used herein, the "metal salt precursor solution" refers to a liquid phase obtained after dispersing a metal salt used as a precursor in a second solvent. The metal element in the metal hydroxide solution is selected from, for example, nickel, tungsten, molybdenum, vanadium, copper or chromium, and correspondingly, the metal salt is selected from, for example, at least one of nickel halide, nickel nitrate, nickel sulfate, nickel sulfamate, nickel acetylacetonate, tungstate, molybdate, copper acetate, copper sulfate, copper nitrate, vanadate, vanadium halide, chromium halide, chromate, copper halide, zinc halide, zincate, titanium halide, titanate, tin halide, stannate, barium halide, tantalum halide, tantalate, zirconium halide, zirconate, lithium halide, gallium halide, gallate, aluminum halide, aluminate, magnesium halide, indium halide or indium salt.
As used herein, "lye" refers to a liquid phase obtained after dispersing an alkali source, such as at least one selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, or tetrabutylammonium hydroxide, in a third solvent.
In some embodiments of the present application, the second solvent and the third solvent are respectively selected from polar solvents, so that the metal salt can be rapidly ionized in the second solvent to generate first metal ions, and the alkali source can be rapidly ionized in the third solvent to generate hydroxyl ions, so as to increase the reaction rate and the generation rate of the metal hydroxide, wherein the polar solvents can be organic polar solvents or inorganic polar solvents, and the condition that the second solvent and the third solvent can be miscible in two phases needs to be satisfied.
In some embodiments of the present application, the second solvent and the third solvent are selected from at least one of ethanol, ethylene glycol, glycerol, isopropanol, butanol, pentanol, octanol, N-methylformamide, N-dimethylformamide, N-methylpyrrolidone, 2-methoxyethanol, 2-ethoxyethanol, 2-methoxybutanol, or dimethylsulfoxide, independently of each other. It should be noted that the second solvent and the third solvent may be the same or different, and only the second solvent and the third solvent need to have desired mutual solubility characteristics, and the second solvent is selected from ethylene glycol and the third solvent is selected from ethanol by way of example.
In order to increase the yield of metal hydroxide, in some embodiments of the present application, in the step of mixing the metal salt precursor solution and the alkali solution to obtain a third mixed solution, metal ions in the metal salt precursor solution: the molar ratio of hydroxyl ions in the alkali liquor is 1: (0.5 to 3.0), for example, 1: (0.5-1.0), 1: (1.0 to 1.5), 1: (1.5-2.0), 1: (2.0 to 2.5), or 1: (2.5-3.0). Metal ions in the metal salt precursor solution: the molar ratio of hydroxyl ions in the alkaline solution is exemplified as 1:0.5, 1:1.0, 1:1.5, 1:2.0, 1:2.5, or 1:3.0.
To increase the yield of metal hydroxide, in some embodiments of the present application, the initial pH of the third mixture is 9 to 14, for example, may be 9 to 10, 10 to 11, 11 to 12, 12 to 13, or 13 to 14, exemplified by 9, 10, 11, 12, 13, or 14. The reaction temperature of the third mixed solution is 25 ℃ to 80 ℃, and may be, for example, 25 ℃ to 30 ℃, 30 ℃ to 40 ℃, 40 ℃ to 50 ℃, 50 ℃ to 60 ℃, 60 ℃ to 70 ℃, or 70 ℃ to 80 ℃, and at least one of 25 ℃, 30 ℃, 40 ℃, 50 ℃, 60 ℃, 70 ℃, or 80 ℃ is exemplified.
In at least one embodiment of the present application, the specific implementation of "mixing the metal salt precursor solution and the alkali solution to obtain a third mixed solution, and reacting the third mixed solution to obtain the metal hydroxide solution" is: dropwise adding alkali liquor into the metal salt precursor solution until metal ions in the metal salt precursor solution: the molar ratio of hydroxyl ions in the alkali liquor is 1: (0.5-3.0), then adjusting the pH value to 9-14, stirring for 1-5 h at 25-80 ℃, and reacting to obtain the metal hydroxide solution. It should be noted that, the metal salt precursor solution may be added dropwise to the alkali solution, and the nucleation rate and nucleation quality of the crystallization may be controlled by adopting a dropwise mixing manner, which is more advantageous to improve the uniformity of the nucleation shape and nucleation size of the crystal than a manner in which the metal salt precursor solution and the alkali solution are directly and completely stirred and mixed at one time.
In order to increase the yield of the metal hydroxide having a porous structure and to avoid the metal hydroxide being excessively treated with hydrogen peroxide, in some embodiments of the present application, in the step of "adding hydrogen peroxide to the metal hydroxide solution to obtain the second mixed solution", the metal hydroxide in the metal hydroxide solution: the mass ratio of the hydrogen peroxide is 1: (0.36 to 7.2), for example, 1: (0.36-0.5), 1: (0.5-1.0), 1: (1.0 to 2.0), 1: (2.0 to 3.0), 1: (3.0 to 4.0), 1: (4.0 to 5.0), 1: (5.0 to 6.0), or 1: (6.0 to 7.2).
In some embodiments of the present application, the reaction temperature of the second mixed liquor is 25 ℃ to 60 ℃, e.g., 25 ℃ to 30 ℃, 30 ℃ to 35 ℃, 35 ℃ to 40 ℃, 40 ℃ to 45 ℃, 45 ℃ to 50 ℃, 50 ℃ to 55 ℃, or 55 ℃ to 60 ℃.
In at least one embodiment of the present application, the specific implementation manner of step S101 is: dropwise adding 30% hydrogen peroxide water solution into the metal hydroxide solution until the metal hydroxide in the metal hydroxide solution: the mass ratio of the hydrogen peroxide is 1: (0.36-7.2), and then stirring at 25-60 ℃ for 10-120 min, and reacting to obtain the metal hydroxide with the porous structure.
It is understood that the reaction product of the second mixed liquid reaction may be subjected to solid-liquid separation as needed, and solids may be collected, the collected solids being metal hydroxide having a porous structure, wherein the solid-liquid separation includes, but is not limited to, sedimentation separation including, but not limited to, gravity sedimentation, centrifugal sedimentation, or electromagnetic force sedimentation, or filtration separation including, but not limited to, reverse osmosis, membrane filtration, nanofiltration, ultrafiltration, or microfiltration, the solid-liquid separation exemplified by centrifugal sedimentation, the centrifugal rotational speed may be, for example, 3000r/min to 6000r/min, and the centrifugal time may be, for example, 5min to 30min.
In some embodiments of the present application, step S102 includes the steps of: the metal hydroxide having a porous structure is placed in a reaction apparatus, and the metal hydroxide having a porous structure is subjected to a baking treatment under an oxygen atmosphere, wherein the baking treatment temperature is 120 ℃ to 250 ℃, for example 120 ℃ to 150 ℃, 150 ℃ to 180 ℃, 180 ℃ to 200 ℃, 200 ℃ to 220 ℃, or 220 ℃ to 250 ℃, for example 120 ℃, 150 ℃, 180 ℃, 200 ℃, or 250 ℃. The reaction equipment is, for example, a tube furnace.
In order to obtain a composite material in the form of a film, in some embodiments of the present application, the method of preparing a composite material further comprises the steps of: s3, providing a substrate, applying a reaction product of the first mixed solution on one side of the substrate, and drying to form a film.
In step S3, the reaction product of the first mixed solution is applied by at least one of spin coating, ink-jet printing, knife coating, dip-coating, dipping, spray coating, roll coating, or casting.
In step S3, the substrate may be a single-layer structure or a laminated structure, and when the substrate is a single-layer structure, the substrate may be a rigid substrate or a flexible substrate, and the composite material is formed on one side of the substrate; when the substrate is of a stacked configuration, the substrate may be a preformed device, which may include, for example, a substrate and a bottom electrode that are stacked, with the composite material being formed on a side of the bottom electrode that is remote from the substrate.
In step S3, the "drying treatment" may be a constant temperature heat treatment or a non-constant temperature heat treatment (e.g., temperature gradient change), and the temperature of the heat treatment may be, for example, 80 ℃ to 150 ℃.
The embodiment of the application further provides an optoelectronic device, as shown in fig. 2, where the optoelectronic device includes an anode 11, a cathode 12, a light emitting layer 13 and a carrier functional layer 14, where the anode 11 and the cathode 12 are disposed opposite to each other, the light emitting layer 13 is disposed between the anode 11 and the cathode 12, and at least part of a film layer in the carrier functional layer is any one of the composite materials in the embodiment of the application or a composite material prepared by the preparation method of any one of the composite materials in the embodiment of the application.
In the optoelectronic device according to the embodiment of the present application, the material of at least part of the film layer in the carrier functional layer 14 is any one of the above composite materials or the composite material manufactured by any one of the above manufacturing methods. It can be understood that the material of the carrier functional layer 14 includes an organic semiconductor material and a metal oxide semiconductor material having a porous structure, at least a part of the organic semiconductor material is located at the pores of the metal oxide semiconductor material, and the metal oxide semiconductor material imparts good chemical stability, thermal stability and thermal conductivity to the carrier functional layer 14, and the organic semiconductor material can improve the carrier mobility of the carrier functional layer 14, so that the carrier functional layer 14 has good thermal stability, good chemical stability and high carrier mobility, thereby improving the photoelectric performance and service life of the photoelectric device 1.
Taking the example of the optoelectronic device 1 as a QLED, a hole transport layer using an organic hole transport material (e.g., TFB) as a material has higher hole transport efficiency, but has poorer chemical and thermal stability than a hole transport layer using an inorganic hole transport material (e.g., nickel oxide) as a material. In addition, the material of the luminescent layer in the QLED is quantum dot, the HOMO energy level of the organic hole transport material is about 5.3eV, even more than 5.3eV, namely the HOMO energy level of the organic hole transport material is larger than the conduction band energy level of the quantum dot, so that the hole injection barrier is higher, and the hole injection is not facilitated; however, the conduction band energy level of the inorganic hole transport material is closer to that of the quantum dot, so that the hole injection barrier is lower, which is beneficial to hole injection, but the inorganic hole transport material has a defect state, so that the hole transport performance is poor.
In the photovoltaic device 1 of the embodiment of the present application, a composite material may be used as the material of the hole transport layer, where the metal oxide semiconductor material in the composite material is an oxide of nickel having a porous structure, the organic semiconductor material is an organic hole transport material (for example, TFB), and at least a portion of the organic semiconductor material is located at the pores of the metal oxide semiconductor material. The metal oxide semiconductor material endows the hole transport layer with good chemical stability, thermal stability and heat conduction performance, can improve the problem that an interface between the hole transport layer and the luminescent layer is damaged due to heating, can reduce an injection barrier between the hole transport layer and the luminescent layer, promotes hole injection, and effectively inhibits adverse effects of excessive electrons (drain electrons) on the performance of the QLED. The organic semiconductor material can improve the hole mobility of the hole transport layer and improve the hole transport performance of the hole transport layer.
In addition, since the size of the metal oxide semiconductor material can be nano-scale, the particle size of the quantum dot is nano-scale, and the molecular size of the organic semiconductor material is larger, only the organic semiconductor material is adopted as the material of the hole transport layer, the size mismatch phenomenon of the organic semiconductor material and the quantum dot at the interface between the hole transport layer and the light-emitting layer can exist, and the composite material containing the metal oxide semiconductor material and the organic semiconductor material is adopted as the material of the hole transport layer, so that the size mismatch phenomenon can be improved, the interface contact between the hole transport layer and the light-emitting layer is optimized, the hole transport efficiency is effectively improved, and the photoelectric performance and the service life of the photoelectric device are further improved.
In the photovoltaic device 1 of the embodiment of this application, the materials of the anode 11 and the cathode 12 are selected from at least one of metal, carbon material, or metal oxide independently of each other, and the metal is selected from at least one of Al, ag, cu, mo, au, ba, ca or Mg; the carbon material is at least one of graphite, carbon nano tube, graphene or carbon fiber; the metal oxide may be a doped or undoped metal oxide, for example, at least one selected from Indium Tin Oxide (ITO), fluorine doped tin oxide (FTO), tin antimony oxide (ATO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), indium doped zinc oxide (IZO) or magnesium doped zinc oxide (MZO). Anode 11 or cathode 12 may also be selected from a composite electrode of doped or undoped transparent metal oxide sandwiching a metal, the composite electrode including but not limited to AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, znO/Ag/ZnO, znO/Al/ZnO, tiO 2 /Ag/TiO 2 、TiO 2 /Al/TiO 2 、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 Or TiO 2 /Al/TiO 2 At least one of them. The thickness of the anode 11 may be, for example, 40nm to 200nm, and the thickness of the cathode 12 may be, for example, 20nm to 200nm.
The material of the light emitting layer 13 is selected from organic light emitting materials or quantum dots, and the thickness of the light emitting layer 13 may be, for example, 10nm to 50nm.
Wherein the organic light emitting material includes, but is not limited to, at least one of a biaryl anthracene derivative, a stilbene aromatic derivative, a pyrene derivative or a fluorene derivative, a TBPe fluorescent material, a TTPA fluorescent material, a TBRb fluorescent material, or a DBP fluorescent material.
Wherein the quantum dots include, but are not limited to, at least one of red, green, or blue quantum dots, and the quantum dots include, but are not limited to, at least one of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, or organic-inorganic hybrid perovskite quantum dots, the average particle size of the quantum dots may be, for example, 5nm to 10nm, and the average particle size of the quantum dots may be, for example, 5nm, 6nm, 7nm, 8nm, 9nm, or 10nm.
For single component quantum dots and core-shell structured quantum dots, the material of the single component quantum dot, the material of the core-shell structured quantum dot, or the material of the shell of the core-shell structured quantum dot includes, but is not limited to, at least one of a group II-VI compound selected from CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe or HgZnSTe, a group III-VI compound selected from GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb, or a group III-VI compound selected from SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe or at least one of SnPbSTe, or a group I-III-VI compound selected from CuInS, cuInSe, or AgInS. It should be noted that, for the material of the single component quantum dot, the material of the core-shell structure quantum dot, or the material of the shell of the core-shell structure quantum dot, the chemical formula provided only shows the elemental composition, and the content of each element is not shown, for example: cdZnS is only denoted as consisting of three elements Cd, zn and S.
For the inorganic perovskite quantum dots, the structural general formula of the inorganic perovskite quantum dots is AMX 3 Wherein A is Cs + Ion, M is a divalent metal cation, M includes but is not limited to Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ Or Eu 2+ X is a halogen anion including but not limited to Cl - 、Br - Or I - 。
For the organic-inorganic hybrid perovskite quantum dots, the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX 3 Wherein B is an organic amine cation including, but not limited to, CH 3 (CH 2 ) n -2NH 3+ (n.gtoreq.2) or NH 3 (CH 2 ) n NH 3 2+ (n.gtoreq.2), M is a divalent metal cation, M includes but is not limited to Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ Or Eu 2+ X is a halogen anion including but not limited to Cl - 、Br - Or I - 。
It is understood that when the material of the light emitting layer includes quantum dots, the material of the light emitting layer further includes a ligand attached to the surface of the quantum dots, the ligand includes, but is not limited to, at least one of amine ligands, carboxylic acid ligands, thiol ligands, (oxy) phosphine ligands, phospholipids, soft phospholipids, or polyvinylpyridines, the amine ligands are selected from at least one of oleylamine, n-butylamine, n-octylamine, octaamine, 1, 2-ethylenediamine, or octadecylamine, the carboxylic acid ligands are selected from at least one of oleic acid, acetic acid, butyric acid, valeric acid, caproic acid, arachic acid, decanoic acid, undecylic acid, tetradecylic acid, or stearic acid, the thiol ligands are selected from at least one of ethanethiol, propanethiol, mercaptoethanol, benzenethiol, octanethiol, dodecyl mercaptan, or octadecylthiol, and the (oxy) phosphine ligands are selected from at least one of trioctylphosphine or trioctylphosphine.
In some embodiments of the present application, with continued reference to fig. 2, the carrier functional layer 14 includes a hole functional layer 141, and the hole functional layer 141 is disposed between the anode 11 and the light emitting layer 13. The hole function layer 141 includes a hole injection layer and/or a hole transport layer, and for the hole function layer 141 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode 11 than the hole transport layer is, and the hole transport layer is closer to the light emitting layer 13 than the hole injection layer, the thickness of the hole injection layer may be, for example, 10nm to 60nm, and the thickness of the hole transport layer may be, for example, 10nm to 60nm.
In some embodiments of the present application, the material of at least a portion of the film layer in the hole-functional layer is any one of the above-described composite materials or a composite material produced by any one of the above-described production methods, the metal oxide semiconductor material contained in the hole-functional layer is at least one selected from the group consisting of nickel oxide, molybdenum oxide, tungsten oxide, chromium oxide, vanadium oxide, and copper oxide, and the organic semiconductor material contained in the hole-functional layer is selected from the group consisting of poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine), 3-hexyl-substituted polythiophene, poly (9-vinylcarbazole), poly [ bis (4-phenyl) (4-butylphenyl) amine ], poly (N, N ' -bis (4-butylphenyl) -N, N ' -diphenyl-1, 4-phenylenediamine-CO-9, 9-dioctylfluorene), 4',4 "-tris (carbazole-9-yl) triphenylamine, 4' -bis (9-carbazolyl) biphenyl, N ' -diphenyl-N, N ' -diphenyl-1, N ' -diphenyl-4 ' -diphenyl-1, 4' -diphenyl-4 ' -biphenyl, 4' -diphenyl-N ' -diphenyl-1, 4' -diphenyl-4, 4' -diphenyl-1, 4' -diphenyl-N ' -diphenyl-1. Poly (styrenesulfonic acid), 4', at least one of 4 '-tris (N-3-methylphenyl-N-phenylamino) triphenylamine, 4' -tris [ 2-naphthylphenylamino ] triphenylamine, 2,3,5, 6-tetrafluoro-7, 7', 8' -tetracyanodimethyl-p-benzoquinone, or 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazabenzofie.
When the hole function layer 141 is a hole injection layer, the corresponding metal oxide semiconductor material is an inorganic hole injection material, for example, at least one selected from the group consisting of nickel oxide, molybdenum oxide, tungsten oxide, chromium oxide, vanadium oxide, and copper oxide having a porous structure, and the organic semiconductor material is an organic hole injection material, for example, at least one selected from the group consisting of poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonic acid), 4 '-tris (N-3-methylphenyl-N-phenylamino) triphenylamine, 4' -tris [ 2-naphthylphenylamino ] triphenylamine, 2,3,5, 6-tetrafluoro-7, 7', 8' -tetracyanodimethyl p-benzoquinone, and 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazabenzofion.
When the hole function layer 141 is a hole transport layer, the corresponding metal oxide semiconductor material is an inorganic hole transport material, for example, at least one selected from the group consisting of nickel oxide, molybdenum oxide, tungsten oxide, chromium oxide, vanadium oxide, and copper oxide having a porous structure, the organic semiconductor material is an organic hole transport material, the organic hole transporting material is, for example, at least one selected from poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine), 3-hexyl-substituted polythiophene, poly (9-vinylcarbazole), poly [ bis (4-phenyl) (4-butylphenyl) amine ], poly (N, N '-bis (4-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine-CO-9, 9-dioctylfluorene), 4',4 "-tris (carbazol-9-yl) triphenylamine, 4' -bis (9-carbazolyl) biphenyl or N, N '-diphenyl-N, N' -bis (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine.
When the hole functional layer 141 includes a hole injection layer and a hole transport layer, the material of the hole injection layer and/or the hole transport layer may be any of the above-described composite materials or a composite material prepared by any of the above-described preparation methods.
In some embodiments of the present application, with continued reference to fig. 2, the carrier functional layer 14 further includes an electronic functional layer 142, the electronic functional layer 142 being disposed between the cathode 12 and the light emitting layer 13. The electron functional layer 142 includes an electron injection layer and/or an electron transport layer, and for the electron functional layer 142 including the electron injection layer and the electron transport layer, the electron injection layer is closer to the cathode 12 than the electron transport layer, the electron transport layer is closer to the light emitting layer 13 than the electron injection layer, the thickness of the electron transport layer is 10nm to 100nm, and the thickness of the electron injection layer is 10nm to 100nm.
In some embodiments of the present application, at least a portion of the electronically functional layer 142 is formed from any of the composite materials or materials described aboveThe composite material prepared by any one of the preparation methods, wherein the metal oxide semiconductor material contained in the electronic functional layer is selected from ZnO and TiO 2 、SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 At least one of TiLiO, znGaO, znAlO, znMgO, znSnO, znLiO, inSnO, alZnO, znOCl, znOF or ZnMgLiO, and the organic semiconductor material contained in the electronic functional layer is at least one selected from 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, 4, 7-diphenyl-1, 10-phenanthroline, 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene or 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-triazole.
When the electron functional layer 142 is an electron injection layer, the metal oxide semiconductor material in the corresponding composite material is an inorganic electron injection material, and the organic semiconductor material is an organic electron injection material. When the electron functional layer 142 is an electron transport layer, the metal oxide semiconductor material in the corresponding composite material is an inorganic electron transport material, and the organic semiconductor material is an organic electron transport material. When the electron functional layer 142 includes an electron injection layer and an electron transport layer, the electron injection layer and/or the electron transport layer may be made of any of the above-described composite materials or a composite material prepared by any of the above-described preparation methods.
Wherein the inorganic electron transport material is selected from ZnO, tiO, for example 2 、SnO 2 、BaO、Ta 2 O 3 、ZrO 2 At least one of TiLiO, znGaO, znAlO, znMgO, znSnO, znLiO, inSnO, alZnO, znOCl or ZnOF. For doped inorganic electron transport materials, the formulas provided only show the elemental composition and do not show the content of the individual elements, for example: znMgO is composed of three elements, zn, mg and O. The inorganic electron transport material may be a nanomaterial, and the average particle diameter may be, for example, 2nm to 15nm, exemplified by 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, or 15nm.
The organic electron transport material is, for example, at least one selected from 8-hydroxyquinoline aluminum, 4, 7-diphenyl-1, 10-phenanthroline, 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene or 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-triazole.
In the photovoltaic device 1 including the hole functional layer 141 and the electron functional layer 142, the material of at least one of the hole functional layer 141 and the electron functional layer 142 includes any of the above composite materials or any of the above composite materials manufactured by the manufacturing method, and the material of the hole functional layer 141 may include any of the above composite materials or any of the above composite materials manufactured by the manufacturing method, for example, QLED, and the material of the electron functional layer 142 is a conventional electron functional material.
In addition, in the optoelectronic device 1, other film layers are prepared by a solution method and a deposition method, wherein the solution method comprises, but is not limited to, spin coating, ink-jet printing, knife coating, dip-coating, dipping, spraying, roll coating or casting; the deposition method includes a chemical method including, but not limited to, a chemical vapor deposition method, a continuous ion layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, or a coprecipitation method, and a physical method including, but not limited to, a thermal evaporation plating method, an electron beam evaporation plating method, a magnetron sputtering method, a multi-arc ion plating method, a physical vapor deposition method, an atomic layer deposition method, or a pulsed laser deposition method.
The embodiment of the application also provides electronic equipment, which comprises any one of the photoelectric devices in the embodiment of the application. The electronic device may be any electronic product with a display function, including but not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television set or an electronic book reader, wherein the smart wearable device may be, for example, a smart bracelet, a smart watch, a Virtual Reality (VR) helmet, etc.
The technical solutions and technical effects of the present application are described in detail below by means of specific examples, comparative examples and experimental examples, and the following examples are only some examples of the present application and are not intended to limit the present application in any way.
Example 1
The embodiment provides a composite material and a preparation method thereof, wherein the composite material comprises a metal oxide semiconductor material and an organic semiconductor material, and the metal oxide semiconductor material is as follows: the mass ratio of the organic semiconductor material is 1:0.05, the metal oxide semiconductor material is nickel oxide (NiO) with a porous structure x ) The organic semiconductor material is poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), and at least a portion of the organic semiconductor material is located at the pores of the metal oxide semiconductor material.
The preparation method of the composite material comprises the following steps:
s1.1, preparing nickel hydroxide solution: nickel nitrate hexahydrate was ultrasonically dissolved and dispersed in ethylene glycol to obtain a nickel nitrate solution having a concentration of 0.1mol/L (nickel ion concentration), and sodium hydroxide was dispersed in ethanol to obtain a sodium hydroxide solution having a concentration of 0.2mol/L (hydroxide ion concentration), and the sodium hydroxide solution was added dropwise to the nickel nitrate solution until nickel ions in the nickel nitrate solution: the molar ratio of hydroxide ions in the sodium hydroxide solution is 1:2.0, regulating the pH value to 12, stirring for 1h at 40 ℃, and reacting to obtain nickel hydroxide solution;
s1.2, preparing nickel hydroxide with a porous structure: taking 40mL of the nickel hydroxide solution prepared in the step S1.1, and dropwise adding 30% hydrogen peroxide water solution into the nickel hydroxide solution until the nickel hydroxide solution: the volume ratio of the 30% hydrogen peroxide aqueous solution is 1:0.5, stirring for 30min at 25 ℃ to obtain a reaction product, centrifuging the reaction product at a rotation speed of 4500r/min for 15min, collecting a precipitate, namely solid nickel hydroxide with a porous structure, wherein the centrifugation speed can be 3000r/min to 6000r/min, and the centrifugation time can be 5min to 30min;
s1.3, preparing nickel oxide with a porous structure: placing solid nickel hydroxide with a porous structure into a tube furnace, and roasting for 40min at 200 ℃ in an oxygen atmosphere to obtain nickel oxide with a porous structure;
S1.4, adding 10mg of nickel oxide with a porous structure into 20mL of TFB-chloroform solution (the concentration of TFB is 10 mg/mL), and stirring and mixing for 30min at 40 ℃ to obtain the composite material.
Example 2
The embodiment of the application provides a composite material and a preparation method thereof, and compared with the composite material in embodiment 1, the composite material in the embodiment is only different in that: metal oxide semiconductor material in composite material: the mass ratio of the organic semiconductor material is 1:0.01.
compared with the preparation method of the composite material in example 1, the preparation method of the composite material in this example is only different in that: the step S1.4 was replaced by "10 mg of nickel oxide having a porous structure was added to 100mL of TFB-chloroform solution (TFB concentration: 10 mg/mL), and stirred and mixed at 40℃for 30 minutes to obtain a composite material.
Example 3
The embodiment of the application provides a composite material and a preparation method thereof, and compared with the composite material in embodiment 1, the composite material in the embodiment is only different in that: metal oxide semiconductor material in composite material: the mass ratio of the organic semiconductor material is 1:0.1.
compared with the preparation method of the composite material in example 1, the preparation method of the composite material in this example is only different in that: the step S1.4 was replaced by "10 mg of nickel oxide having a porous structure was added to 10mL of TFB-chloroform solution (TFB concentration: 10 mg/mL), and stirred and mixed at 40℃for 30 minutes to obtain a composite material.
Example 4
The embodiment of the application provides a composite material and a preparation method thereof, and compared with the composite material in embodiment 1, the composite material in the embodiment is only different in that: metal oxide semiconductor material in composite material: the mass ratio of the organic semiconductor material is 1:0.005.
compared with the preparation method of the composite material in example 1, the preparation method of the composite material in this example is only different in that: the step S1.4 was replaced by "10 mg of nickel oxide having a porous structure was added to 200mL of TFB-chloroform solution (TFB concentration: 10 mg/mL), and stirred and mixed at 40℃for 30 minutes to obtain a composite material.
Example 5
The embodiment of the application provides a composite material and a preparation method thereof, and compared with the composite material in embodiment 1, the composite material in the embodiment is only different in that: metal oxide semiconductor material in composite material: the mass ratio of the organic semiconductor material is 1:0.5.
compared with the preparation method of the composite material in example 1, the preparation method of the composite material in this example is only different in that: the step S1.4 was replaced by "10 mg of nickel oxide having a porous structure was added to 2mL of TFB-chloroform solution (TFB concentration: 10 mg/mL), and stirred and mixed at 40℃for 30 minutes to obtain a composite material.
Example 6
The embodiment of the application provides a composite material and a preparation method thereof, and compared with the composite material in embodiment 1, the composite material in the embodiment is only different in that: the organic semiconductor material in the composite material is replaced with "poly (9-vinylcarbazole) (PVK)".
Compared with the preparation method of the composite material in example 1, the preparation method of the composite material in this example is only different in that: the step S1.4 was replaced with "10 mg of nickel oxide having a porous structure was added to 20mL of PVK-chloroform solution (TFB concentration 10 mg/mL), and stirred and mixed at 40℃for 30 minutes to obtain a composite material.
Example 7
The embodiment of the application provides a composite material and a preparation method thereof, and compared with the composite material in embodiment 1, the composite material in the embodiment is only different in that: replacement of metal oxide semiconductor material in composite material with "molybdenum oxide (MoO) x )”。
The preparation method of the composite material comprises the following steps:
s7.1, preparing a molybdenum hydroxide solution: ultrasonically dissolving and dispersing ammonium molybdate in ethylene glycol to obtain an ammonium molybdate solution with the concentration of 0.1mol/L (molybdenum ion concentration), dispersing sodium hydroxide in ethanol to obtain a sodium hydroxide solution with the concentration of 0.3mol/L (hydroxide ion concentration), and dropwise adding the sodium hydroxide solution into the ammonium molybdate solution until molybdenum ions in the ammonium molybdate solution: the molar ratio of hydroxide ions in the sodium hydroxide solution is 1:3.0, regulating the pH value to 12, and stirring for 1h at 40 ℃ to obtain a molybdenum hydroxide solution through reaction;
S7.2, preparing molybdenum hydroxide with a porous structure: taking 40mL of the molybdenum hydroxide solution prepared in the step S1.1, and dropwise adding 30% hydrogen peroxide water solution into the molybdenum hydroxide solution until the molybdenum hydroxide solution: the volume ratio of the 30% hydrogen peroxide aqueous solution is 1:0.5, stirring for 30min at 25 ℃ to obtain a reaction product, centrifuging the reaction product at a rotating speed of 4500r/min for 15min, and collecting a precipitate, wherein the precipitate is solid molybdenum hydroxide with a porous structure;
s7.3, preparing molybdenum oxide with a porous structure: placing the solid molybdenum hydroxide solution with the porous structure into a tube furnace, and roasting for 60min at 230 ℃ in an oxygen atmosphere to obtain molybdenum oxide with the porous structure;
s7.4, adding 10mg of molybdenum oxide with a porous structure into 20mL of TFB-chloroform solution (the concentration of TFB is 10 mg/mL), and stirring and mixing for 30min at 40 ℃ to obtain the composite material.
Example 8
The embodiment provides an optoelectronic device and a preparation method thereof, the optoelectronic device is a quantum dot light emitting diode with a forward structure, as shown in fig. 3, in a bottom-up direction, the optoelectronic device 1 includes a substrate 10, an anode 11, a hole functional layer 141, a light emitting layer 13, an electron functional layer 142 and a cathode 12, which are sequentially stacked, wherein the hole functional layer 141 and the electron functional layer 142 form a carrier functional layer 14, the hole functional layer 141 is composed of a hole injection layer 1411 and a hole transport layer 1412 which are stacked, the hole injection layer 1411 is closer to the anode 11 than the hole transport layer 1412, the hole transport layer 1412 is closer to the light emitting layer 13 than the hole injection layer 1411, and the electron functional layer 142 is an electron transport layer.
The materials and thicknesses of the respective layers in the optoelectronic device 1 are as follows:
the material of the substrate 10 is glass, and the thickness of the substrate 10 is 2mm;
the anode 11 is made of ITO, and the thickness of the anode 11 is 55nm;
the cathode 12 is made of Al, and the thickness of the cathode 12 is 70nm;
the luminescent layer 13 is made of CdZnSe blue quantum dots, and the thickness of the luminescent layer 13 is 25nm;
the hole injection layer 1411 is made of PEDOT PSS, and the thickness of the hole injection layer 1411 is 35nm;
the material of the hole transport layer 1412 was the composite material prepared in example 1, and the thickness of the hole transport layer 1412 was 40nm;
the material of the electron function layer 142 is nano ZnO (particle size distribution is 2nm to 5 nm), and the thickness of the electron function layer 142 is 50nm.
The preparation method of the photoelectric device in the embodiment comprises the following steps:
s8.1, providing a substrate, sputtering ITO on one side of the substrate to obtain an ITO layer, dipping a small amount of soapy water on the surface of the ITO layer by using a cotton swab to wipe the surface of the ITO layer so as to remove impurities visible to the naked eyes on the surface, sequentially ultrasonically cleaning the substrate comprising the ITO by using deionized water, acetone for 15min, ethanol for 15min and isopropanol for 15min, and performing ultraviolet-ozone surface treatment for 15min after drying to obtain the substrate comprising an anode;
S8.2 spin coating PEDOT on the side of the anode remote from the substrate in an environment with a water oxygen content of less than 0.1 ppm: performing constant temperature heat treatment on the PSS aqueous solution at 150 ℃ for 15min to obtain a hole injection layer;
s8.3, spin coating the composite material prepared in the step S1.4 on one side of the hole injection layer far away from the anode in an environment with the water-oxygen content less than 0.1ppm, and then performing constant-temperature heat treatment at 120 ℃ for 10min to obtain a hole transport layer;
s8.4, spin-coating a CdZnSe-n-octane solution with the concentration of 30mg/mL on one side of the hole transport layer far away from the hole injection layer in an environment with the water-oxygen content of less than 0.1ppm, and then performing constant-temperature heat treatment at 120 ℃ for 5min to obtain a luminescent layer;
s8.5 spin coating a light-emitting layer with a concentration of 30mg/mL on the side thereof remote from the hole transport layer in an environment with a water-oxygen content of less than 0.1ppmNanometer ZnO-ethanol solution is then placed in 10 -2 Standing for 15min under vacuum environment of Mpa to obtain electronic functional layer;
s8.6, placing the prefabricated device containing the electronic functional layer in vacuum degree not higher than 3x10 -4 And in the evaporation bin of Pa, thermally evaporating Al on one side of the electron transport layer far away from the light-emitting layer through the mask plate, and then packaging with epoxy resin to obtain the photoelectric device.
Example 9
The present embodiment provides an optoelectronic device and a method for manufacturing the same, and compared with the optoelectronic device of embodiment 8, the optoelectronic device of the present embodiment is only different in that: the material of the hollow transfer layer in example 8 was replaced with the "composite material prepared in example 1" by the "composite material prepared in example 2".
The preparation of the photovoltaic device was carried out with reference to example 8.
Example 10
The present embodiment provides an optoelectronic device and a method for manufacturing the same, and compared with the optoelectronic device of embodiment 8, the optoelectronic device of the present embodiment is only different in that: the material of the hollow transfer layer in example 8 was replaced with the "composite material prepared in example 1" by the "composite material prepared in example 3".
The preparation of the photovoltaic device was carried out with reference to example 8.
Example 11
The present embodiment provides an optoelectronic device and a method for manufacturing the same, and compared with the optoelectronic device of embodiment 8, the optoelectronic device of the present embodiment is only different in that: the material of the hollow transfer layer in example 8 was replaced with the "composite material prepared in example 1" by the "composite material prepared in example 4".
The preparation of the photovoltaic device was carried out with reference to example 8.
Example 12
The present embodiment provides an optoelectronic device and a method for manufacturing the same, and compared with the optoelectronic device of embodiment 8, the optoelectronic device of the present embodiment is only different in that: the material of the hollow transfer layer in example 8 was replaced with the "composite material prepared in example 1" by the "composite material prepared in example 5".
The preparation of the photovoltaic device was carried out with reference to example 8.
Example 13
The present embodiment provides an optoelectronic device and a method for manufacturing the same, and compared with the optoelectronic device of embodiment 8, the optoelectronic device of the present embodiment is only different in that: the material of the hollow transfer layer in example 8 was replaced with the "composite material prepared in example 1" by the "composite material prepared in example 6".
The preparation of the photovoltaic device was carried out with reference to example 8.
Example 14
The present embodiment provides an optoelectronic device and a method for manufacturing the same, and compared with the optoelectronic device of embodiment 8, the optoelectronic device of the present embodiment is only different in that: the material of the hollow transfer layer in example 8 was replaced with the "composite material prepared in example 1" by the "composite material prepared in example 7".
The preparation of the photovoltaic device was carried out with reference to example 8.
Comparative example 1
The present comparative example provides an optoelectronic device and a method for manufacturing the same, which differs from the optoelectronic device of example 8 only in that: the material of the hollow transfer layer in example 8 was replaced with "TFB" from the "composite material prepared in example 1".
The method of manufacturing the photovoltaic device in this comparative example differs from the method of manufacturing the photovoltaic device in example 8 only in that: and replacing the step S8.3 with 'spin-coating a TFB-chloroform solution with the concentration of 10mg/mL on the side of the anode far away from the substrate under the environment with the water-oxygen content of less than 0.1 ppm', and then placing the substrate at the constant temperature for heat treatment for 30min at the temperature of 120 ℃ to obtain a hole transport layer.
Comparative example 2
The present comparative example provides an optoelectronic device and a method for manufacturing the same, which differs from the optoelectronic device of example 8 only in that: the material of the hollow transport layer in example 8 was composed of"composite material prepared in example 1" was replaced by "NiO x ”。
The method of manufacturing the photovoltaic device in this comparative example differs from the method of manufacturing the photovoltaic device in example 8 only in that: and replacing the step S8.3 with the nickel hydroxide solution prepared in the step S1.1, spin-coating the nickel hydroxide solution on one side of the anode far away from the substrate in an air environment of normal temperature and normal pressure, and then placing the substrate at a constant temperature of 250 ℃ for heat treatment for 60min to obtain the hole transport layer.
Experimental example
The photoelectric devices of examples 8 to 14, comparative example 1 and comparative example 2 were subjected to performance test, parameters such as voltage, current, luminance, luminescence spectrum and the like of each photoelectric device were obtained by detection using a Friedel-crafts FPD optical property measuring apparatus (efficiency test system constructed by LabView control QE-PRO spectrometer, keithley 2400 and Keithley 6485), then key parameters such as external quantum efficiency (External Quantum Efficiency, EQE) and power efficiency were calculated and the service lives of the above-mentioned respective photoelectric devices were tested using a life test apparatus.
The life test adopts a constant current method, under the drive of a constant current (2 mA current), a silicon optical system is adopted to test the brightness change of each photoelectric device, the time (T95, h) required for the brightness to decay from 100% to 95% is recorded, and the time (T95-1K, h) required for the brightness to decay from 100% to 95% of each photoelectric device under the brightness of 1000nit is calculated.
The method for measuring the starting voltage comprises the following steps: and obtaining the voltage value when the brightness reaches 1nit from an efficiency test system built by Keithley 6485.
The performance test data for each optoelectronic device is detailed in table 1 below:
table 1 list of performance test data for optoelectronic devices of examples 8-14, comparative example 1, and comparative example 2
Remarks: EQ in Table 1 Emax Maximum external quantum efficiency.
As can be seen from table 1, the overall performance of the photovoltaic devices in examples 8 to 14 has significant advantages compared to the photovoltaic devices in comparative examples 1 and 2, and is specifically expressed as follows: the photovoltaic devices of examples 8 to 14 were more stable in operation and EQE max Higher, lower turn-on voltage and longer life. Taking the performance test data of the optoelectronic devices of example 8 and comparative example 1 as an example, the EQE of the optoelectronic device of example 8 is the same day of packaging max EQE which is the optoelectronic device of comparative example 1 max And the turn-on voltage of the photovoltaic device in example 8 was only 47% of the turn-on voltage of the photovoltaic device in comparative example 1, and T95-1K of the photovoltaic device in example 8 was 13.6 times that of the photovoltaic device in comparative example 1; EQE of optoelectronic device in example 8 after 10 days of air-laying after encapsulation max EQE which is the optoelectronic device of comparative example 1 max And the turn-on voltage of the photovoltaic device in example 1 was only 46% of the turn-on voltage of the photovoltaic device in comparative example 1, and T95-1K of the photovoltaic device in example 1 was 28 times that of the photovoltaic device in comparative example 1.
This demonstrates that QLEDs employing a composite material comprising a metal oxide semiconductor material and an organic semiconductor material as a hole transporting material have higher operational stability and better photoelectric properties and service life than QLEDs employing a metal oxide semiconductor material (inorganic hole transporting material) or an organic semiconductor material (organic hole transporting material) as a hole transporting material, because: in the first aspect, the composite material has the advantages of a metal oxide semiconductor material and an organic semiconductor material, the metal oxide semiconductor material endows the hole transport layer with good chemical stability, thermal stability and thermal conductivity, and reduces an injection barrier between the hole transport layer and the light-emitting layer, and the organic semiconductor material endows the hole transport layer with good hole mobility; in the second aspect, the metal oxide semiconductor material has good thermal conductivity, so that the problem that an interface between the hole transport layer and the light emitting layer is damaged due to heating can be solved, and adverse effects of excessive electrons (drain electrons) on the performance of the QLED can be restrained, thereby reducing the starting voltage of the photoelectric device; in the third aspect, the composite material containing the metal oxide semiconductor material and the organic semiconductor material is adopted as the material of the hole transport layer, so that the size mismatch phenomenon can be improved, the interface contact between the hole transport layer and the light-emitting layer is optimized, the hole transport efficiency is effectively improved, and the photoelectric performance, the service life and the working stability of the photoelectric device are further improved.
From the performance test data of the photovoltaic devices in examples 8 to 12, it can be seen that the overall performance of the photovoltaic devices in examples 11 and 12 is inferior to that of the photovoltaic devices in examples 8 to 10, and it can be seen that: in the hole transport layer, an organic semiconductor material: the mass ratio of the metal oxide semiconductor material is 1: (0.01-0.1) can further improve the photoelectric performance and service life of the photoelectric device, and has better working stability.
From the performance test data of the optoelectronic devices in examples 8, 13 to 14, the overall performance of the optoelectronic device in example 8 is better than that of the optoelectronic devices in examples 13 and 14, and it is clear that: for composite materials used as hole transport materials, the metal oxide semiconductor material is selected from NiO x And the organic semiconductor material is selected from TFB, so that the photoelectric property and service life of the photoelectric device can be further improved, and the working stability is better.
The above details are provided for a composite material, a preparation method of the composite material, an optoelectronic device and an electronic device. The principles and embodiments of the present application are described herein with reference to specific examples, the description of which is only for aiding in understanding the technical solution of the present application and its core ideas; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the scope of the corresponding technical solutions of the embodiments of the present application.
Claims (15)
1. A composite material comprising an organic semiconductor material and a metal oxide semiconductor material having a porous structure, at least a portion of the organic semiconductor material being located at pores of the metal oxide semiconductor material.
2. The composite material of claim 1, wherein the composite material consists of the organic semiconductor material and the metal oxide semiconductor material.
3. The composite material according to claim 1 or 2, wherein in the composite material, the organic semiconductor material: the mass ratio of the metal oxide semiconductor material is 1: (0.01-0.1);
and/or the metal oxide semiconductor material has an average particle diameter of 15nm to 30nm.
4. A composite material according to claim 3, wherein the metal oxide semiconductor material is selected from the group consisting of nickel oxide, molybdenum oxide, tungsten oxide, chromium oxide, vanadium oxide, copper oxide, znO, tiO 2 、SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 At least one of TiLiO, znGaO, znAlO, znMgO, znSnO, znLiO, inSnO, alZnO, znOCl, znOF or ZnMgLiO;
and/or the organic semiconductor material is selected from poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine), 3-hexyl-substituted polythiophene, poly (9-vinylcarbazole), poly [ bis (4-phenyl) (4-butylphenyl) amine ], poly (N, N '-bis (4-butylphenyl) -N, N' -diphenyl-1, 4-phenylenediamine-CO-9, 9-dioctylfluorene), 4',4 "-tris (carbazole-9-yl) triphenylamine, 4' -bis (9-carbazole) biphenyl, N '-diphenyl-N, N' -bis (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonic acid), 4 '-tris (N-3-methylphenyl-N-phenylamino) triphenylamine, 4' -tris [ 2-naphthylphenylamino ] triphenylamine, 2,3,5, 6-tetrafluoro-7, 7', 8' -tetracyanodimethyl p-benzoquinone, 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazabenzophenanthrene, 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, 4, 7-diphenyl-1, 10-phenanthroline, at least one of 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline, 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene or 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-triazole.
5. A method of preparing a composite material, comprising the steps of:
providing a first mixed solution comprising an organic semiconductor material and a metal oxide semiconductor material having a porous structure; and
and the first mixed solution reacts to obtain the composite material.
6. The method according to claim 5, wherein in the first mixed liquid, the organic semiconductor material: the mass ratio of the metal oxide semiconductor material is 1: (0.005-0.1);
and/or the first mixed solution further comprises a first solvent, wherein the first solvent is selected from at least one of toluene, chloroform, carbon tetrachloride, chlorobenzene, o-dichlorobenzene, p-dichlorobenzene or 1,3, 5-trichlorobenzene;
and/or the reaction temperature of the first mixed solution is 40-120 ℃, and the initial pH of the first mixed solution is 9-12.
7. The method of manufacturing according to claim 5 or 6, wherein the method of manufacturing a metal oxide semiconductor material comprises the steps of:
providing a metal hydroxide solution, adding hydrogen peroxide into the metal hydroxide solution to obtain a second mixed solution, and reacting the second mixed solution to obtain metal hydroxide with a porous structure; and
And carrying out heat treatment on the metal hydroxide with the porous structure in an oxygen atmosphere to obtain the metal oxide with the porous structure.
8. The method according to claim 7, wherein in the step of adding hydrogen peroxide to the metal hydroxide solution to obtain a second mixed solution, metal hydroxide in the metal hydroxide solution: the mass ratio of the hydrogen peroxide is 1: (0.36-7.2);
and/or the reaction temperature of the second mixed solution is 25 ℃ to 60 ℃;
and/or, the heat treatment of the metal hydroxide with the porous structure is carried out under the oxygen atmosphere, and the method comprises the following steps: and placing the metal hydroxide with the porous structure into a reaction device, and roasting the metal hydroxide with the porous structure in an oxygen atmosphere, wherein the roasting temperature is 120-250 ℃.
9. The method of preparing as claimed in claim 8, wherein the providing of the metal hydroxide solution comprises the steps of: providing a metal salt precursor solution and an alkali solution, and mixing the metal salt precursor solution and the alkali solution to obtain a third mixed solution, wherein the third mixed solution reacts to obtain the metal hydroxide solution.
10. The method according to claim 9, wherein in the step of mixing the metal salt precursor solution and the alkali solution to obtain a third mixed solution, metal ions in the metal salt precursor solution: the molar ratio of hydroxyl ions in the alkali liquor is 1: (0.5-3.0);
and/or the initial pH of the third mixed solution is 9 to 14, and the reaction temperature of the third mixed solution is 25 to 80 ℃;
and/or the solvent of the metal salt precursor solution is a second solvent, the solvent in the alkali liquor is a third solvent, and the second solvent and the third solvent are selected from polar solvents;
and/or the metal salt precursor in the metal salt precursor solution is selected from at least one of nickel halide, nickel nitrate, nickel sulfate, nickel sulfamate, nickel acetylacetonate, tungstate, molybdate, copper acetate, copper sulfate, copper nitrate, vanadate, vanadium halide, chromium halide, chromate, copper halide, zinc halide, zincate, titanium halide, titanate, tin halide, stannate, barium halide, barium salt, tantalum halide, tantalate, zirconium halide, zirconate, lithium halide, gallium halide, gallate, aluminum halide, aluminate, magnesium halide, magnesium salt, indium halide, or indium salt;
And/or the alkali source in the alkali liquor is at least one selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide or tetrabutyl ammonium hydroxide.
11. The production method according to claim 10, wherein the second solvent and the third solvent are selected from at least one of ethanol, ethylene glycol, glycerol, isopropanol, butanol, pentanol, octanol, N-methylformamide, N-dimethylformamide, N-methylpyrrolidone, 2-methoxyethanol, 2-ethoxyethanol, 2-methoxybutanol, or dimethylsulfoxide, independently of each other.
12. An optoelectronic device, comprising:
an anode;
a cathode disposed opposite the anode;
a light-emitting layer disposed between the anode and the cathode; and
a carrier functional layer disposed between the anode and the light emitting layer and/or between the cathode and the light emitting layer;
wherein the material of at least part of the film layer in the carrier functional layer is a composite material as claimed in any one of claims 1 to 4 or a composite material produced by the production method as claimed in any one of claims 5 to 11.
13. The optoelectronic device of claim 12, wherein the material of the light emitting layer is selected from an organic light emitting material or quantum dots;
wherein the organic luminescent material is selected from at least one of a biaryl anthracene derivative, a stilbene aromatic derivative, a pyrene derivative or a fluorene derivative, a TBPe fluorescent material, a TTPA fluorescent material, a TBRb fluorescent material or a DBP fluorescent material;
the quantum dots are selected from at least one of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots;
when the quantum dot is selected from a single component quantum dot or a core-shell structure quantum dot, the material of the single component quantum dot, the material of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are selected from at least one of group II-VI compound, group III-V compound, group IV-VI compound, or group I-III-VI compound, independently of each other, wherein the group II-VI compound is selected from at least one of CdS, cdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, cdSeS, cdSeTe, cdSTe, znSeS, znSeTe, znSTe, hgSeS, hgSeTe, hgSTe, cdZnS, cdZnSe, cdZnTe, cdHgS, cdHgSe, cdHgTe, hgZnS, hgZnSe, hgZnTe, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe or HgZnSTe, the group III-V compound is selected from at least one of GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, gaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, gaAlNAs, gaAlNSb, gaAlPAs, gaAlPSb, gaInNP, gaInNAs, gaInNSb, gaInPAs, gaInPSb, inAlNP, inAlNAs, inAlNSb, inAlPAs or InAlPSb, the group IV-VI compound is selected from at least one of SnS, snSe, snTe, pbS, pbSe, pbTe, snSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, snPbSSe, snPbSeTe or snpb, and the group I-III-VI compound is selected from at least one of CuInS, cuInSe, or AgInS;
And/or the materials of the anode and the cathode are selected from at least one of metal, carbon material or metal oxide independently of each other, the metal is selected from at least one of Al, ag, cu, mo, au, ba, ca or Mg, the carbon material is selected from at least one of graphite, carbon nanotube, graphene or carbon fiber, and the metal oxide is selected from at least one of indium tin oxide, fluorine doped tin oxide, tin antimony oxide, aluminum doped zinc oxide, gallium doped zinc oxide, indium doped zinc oxide or magnesium doped zinc oxide.
14. An optoelectronic device according to claim 12 or 13, wherein the carrier functional layer comprises a hole functional layer, the hole functional layer being disposed between the anode and the light emitting layer, the material of at least part of the film layer in the hole functional layer being the composite material as claimed in any one of claims 1 to 4 or the composite material produced by the production method as claimed in any one of claims 5 to 11, the metal oxide semiconductor material contained in the hole functional layer being selected from at least one of an oxide of nickel, an oxide of molybdenum, an oxide of tungsten, an oxide of chromium, an oxide of vanadium or an oxide of copper, the organic semiconductor material contained in the hole functional layer is selected from poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine), 3-hexyl-substituted polythiophene, poly (9-vinylcarbazole), poly [ bis (4-phenyl) (4-butylphenyl) amine ], poly (N, N ' -bis (4-butylphenyl) -N, N ' -diphenyl-1, 4-phenylenediamine-CO-9, 9-dioctylfluorene), 4',4 "-tris (carbazole-9-yl) triphenylamine, 4' -bis (9-carbazole) biphenyl, N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1' -biphenyl-4, 4' -diamine, N ' -diphenyl-N, at least one of poly (styrenesulfonic acid), 4 '-tris (N-3-methylphenyl-N-phenylamino) triphenylamine, 4' -tris [ 2-naphthylphenylamino ] triphenylamine, 2,3,5, 6-tetrafluoro-7, 7', 8' -tetracyanodimethyl-p-benzoquinone, or 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazabenzofion;
And/or the carrier functional layer comprises an electron functional layer disposed between the cathode and the light emitting layer, at least part of the film layer of the electron functional layer being made of the composite material as claimed in any one of claims 1 to 4 or the composite material obtained by the preparation method as claimed in any one of claims 5 to 11, the electron functional layer being made of a material as described in any one of claims 1 to 11The metal oxide semiconductor material contained in the layer is selected from ZnO and TiO 2 、SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 At least one of TiLiO, znGaO, znAlO, znMgO, znSnO, znLiO, inSnO, alZnO, znOCl, znOF or ZnMgLiO, the organic semiconductor material contained in the electronic functional layer is selected from at least one of 8-hydroxyquinoline aluminum, 8-hydroxyquinoline lithium, 4, 7-diphenyl-1, 10-phenanthroline, 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene or 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-triazole.
15. An electronic device, characterized in that it comprises an optoelectronic device as claimed in any one of claims 12 to 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211113464.4A CN117750863A (en) | 2022-09-14 | 2022-09-14 | Composite material, preparation method of composite material, photoelectric device and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211113464.4A CN117750863A (en) | 2022-09-14 | 2022-09-14 | Composite material, preparation method of composite material, photoelectric device and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117750863A true CN117750863A (en) | 2024-03-22 |
Family
ID=90249455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211113464.4A Pending CN117750863A (en) | 2022-09-14 | 2022-09-14 | Composite material, preparation method of composite material, photoelectric device and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117750863A (en) |
-
2022
- 2022-09-14 CN CN202211113464.4A patent/CN117750863A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11793011B2 (en) | Quantum dot device and display device | |
| EP3683853B1 (en) | Quantum dot device and electronic device | |
| CN116987298A (en) | Thin film, light emitting device and display device | |
| CN117750863A (en) | Composite material, preparation method of composite material, photoelectric device and electronic equipment | |
| CN117998885A (en) | Metal oxide, light emitting device and display apparatus including the same | |
| WO2023082964A1 (en) | Complex, preparation method for complex, and electroluminescent device | |
| CN117430092A (en) | Composite material, preparation method of composite material, photoelectric device and electronic equipment | |
| WO2024067203A1 (en) | Composite material, photoelectric device, and preparation method therefor | |
| CN116367583A (en) | Light emitting device, manufacturing method of light emitting device and display device | |
| CN117998949A (en) | Composite material, light emitting device and display device including the same | |
| CN116162459B (en) | Quantum dot purification method, quantum dot, light-emitting device and electronic equipment | |
| WO2023078138A1 (en) | Photoelectric device and preparation method therefor, and display apparatus | |
| CN117222244A (en) | Composite material, film, light-emitting device and display device | |
| CN117645280A (en) | Preparation method of composite material, light-emitting device and display device | |
| CN117998950A (en) | Composite material, preparation method of composite material, photoelectric device and electronic equipment | |
| WO2023088022A1 (en) | Light-emitting device, preparation method for light-emitting device, and display apparatus | |
| WO2023116207A1 (en) | Composition, preparation method for composition, and light-emitting device | |
| CN117750860A (en) | Thin film preparation method, light-emitting device preparation method and electronic equipment | |
| CN116981283A (en) | Light emitting device, method of manufacturing the same, and display apparatus | |
| CN117135980A (en) | Preparation method of light-emitting device, light-emitting device and display device | |
| CN116813668A (en) | Compound, light-emitting device including the same, and display device | |
| CN116437690A (en) | Preparation method of light-emitting device, light-emitting device and display device | |
| CN117015291A (en) | Composite material, preparation method thereof, light-emitting device and display device | |
| CN117466253A (en) | Preparation method of metal oxide, light-emitting device and display device | |
| CN117769339A (en) | Thin film preparation method, photoelectric device preparation method and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |