CN117747731A - Light-emitting diode structure - Google Patents
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- CN117747731A CN117747731A CN202311789290.8A CN202311789290A CN117747731A CN 117747731 A CN117747731 A CN 117747731A CN 202311789290 A CN202311789290 A CN 202311789290A CN 117747731 A CN117747731 A CN 117747731A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 51
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- 229910052709 silver Inorganic materials 0.000 description 1
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- 238000003892 spreading Methods 0.000 description 1
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Abstract
The application discloses a light emitting diode structure, include: the semiconductor device comprises a back electrode layer, a P-type semiconductor layer, an active layer, an N-type semiconductor layer and a front electrode layer which are sequentially stacked, wherein the back electrode layer and the P-type semiconductor layer are electrically connected in a partial area to form a back electrode contact area, and the back electrode contact area is arranged on the back electrode layer to form a regular geometric figure; the front electrode layer and the N-type semiconductor layer are electrically connected in a partial area to form a plurality of regularly arranged front electrode contact areas, and the front electrode contact areas are respectively positioned at the geometric centers of geometric figures of the back electrode contact areas on a projection plane parallel to the back electrode layer. According to the light-emitting diode structure, the problem of low photoelectric conversion efficiency caused by current crowding is solved, and the photoelectric conversion efficiency of the LED device is effectively improved.
Description
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to a light-emitting diode structure and a manufacturing method thereof.
Background
Light-emitting diodes (LEDs) have made remarkable progress in recent decades and have been widely used in the fields of lighting, display screens, indicator lights, and the like. However, in the conventional nitride system, since the P-type material has poor conductivity, when current is injected through the electrode, the current flows in the horizontal direction far less than the current flows in the vertical direction, i.e., the current is unevenly spread in the device, thereby reducing the light emitting uniformity of the LED device. In addition, the local accumulation of current can also cause high starting voltage, uneven heating, and non-radiative recombination of the active layer is increased, thereby reducing internal quantum efficiency. Meanwhile, photons emitted by radiation recombination in an active region of the LED device can not be totally extracted through one or two reflections in the device, and the main reason is that part of light can be absorbed by an electrode, so that the photoelectric conversion efficiency of the LED device is reduced. Therefore, improving current spreading uniformity and reducing light loss at the device-electrode interface are critical to improving the photoelectric conversion efficiency of the LED device.
Disclosure of Invention
In response to the above problems and needs for improvement in the art, the present application provides an improved light emitting diode structure to improve the photoelectric conversion efficiency of an LED device.
The application provides a light emitting diode structure, includes: a back electrode layer, a P-type semiconductor layer, an active layer, an N-type semiconductor layer, and a front electrode layer, which are sequentially stacked,
the back electrode layer and the P-type semiconductor layer are electrically connected in a partial region to form a back electrode contact region, and the back electrode contact region is arranged on the back electrode layer to form a regular geometric figure;
the front electrode layer and the N-type semiconductor layer are electrically connected in a partial area to form a plurality of regularly arranged front electrode contact areas, and the front electrode contact areas are respectively positioned at the geometric centers of geometric figures of the back electrode contact areas on a projection plane parallel to the back electrode layer.
According to some embodiments of the invention, the back electrode contact regions are arranged in a regular polygon pattern, the front electrode contact regions being located at the geometric center of the regular polygon pattern, respectively.
According to some embodiments of the invention, the back electrode contact area is constituted by discrete point-like contact areas, which are arranged in a regular polygon pattern.
According to some embodiments of the invention, the back electrode contact region is constituted by linear contact regions connected in a regular polygon pattern or a circular ring pattern.
According to some embodiments of the invention, the back electrode contact regions are arranged in a regular hexagonal pattern.
According to some embodiments of the invention, the distance from the geometric center point to the geometric corner point of the geometric pattern of the back electrode contact region is equal and smaller than the lateral current diffusion length of the N-type semiconductor layer.
According to some embodiments of the invention, there is a GaAs conductive contact layer between the front electrode contact region and the N-side semiconductor layer.
According to some embodiments of the invention, an insulating medium layer is sandwiched between a non-electrode contact region except a back electrode contact region and a P-type semiconductor layer on the back electrode layer, and the P-type semiconductor layer, the insulating medium layer and the back electrode layer form an ODR total reflection structure.
According to some embodiments of the present invention, an insulating medium layer is sandwiched between a non-electrode contact region except a front electrode contact region on the front electrode layer and an N-type semiconductor layer, and the N-type semiconductor layer, the insulating medium layer and the front electrode layer form an ODR total reflection structure.
According to some embodiments of the invention, the back electrode layer is a full-face metal electrode layer and the front electrode layer is a gate line electrode layer.
According to the LED structure, the back electrode contact area between the back electrode layer and the P-type semiconductor layer is arranged into a regular geometric figure, and the front electrode contact area between the front electrode layer and the N-type semiconductor layer is positioned at the geometric center of the geometric figure of the back electrode contact area, so that the current expansion uniformity is improved from the electrode structure layout, the problem of low photoelectric conversion efficiency caused by current crowding is solved, and the photoelectric conversion efficiency of the LED device is effectively improved. In addition, by embedding an ODR structure (omni-directional reflector) below the front electrode, the metal light absorption of the front electrode is reduced, and the photoelectric conversion efficiency of the LED device is further improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a light emitting diode device structure according to one embodiment of the present application;
fig. 2 is a schematic plan view of a layout pattern of a back electrode contact region of a light emitting diode device according to one embodiment of the present application;
fig. 3 is a schematic plan view of a layout pattern of a back electrode contact region of a light emitting diode device according to another embodiment of the present application;
FIG. 4 is a schematic plan view of a pattern of front electrodes and front electrode contact areas of a light emitting diode device according to one embodiment of the present application, wherein the pattern of corresponding back electrode contact areas is shown; and
fig. 5 is a flow chart of a process for fabricating a light emitting diode device according to one embodiment of the present application.
Detailed Description
In order to more clearly describe the technical solutions of the present application, the embodiments of the present application will be described in detail below with reference to the accompanying drawings. It is noted that the drawings and the description of specific embodiments are only for better understanding of the invention, and the invention is not limited to the described embodiments.
Technical or scientific terms used herein should be given the ordinary meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The use of the terms "comprising" or "includes" and the like in this specification is intended to be open-ended terms that do not exclude other elements, components, parts, or items than those explicitly listed. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed. "first," "second," etc. are used for the purpose of distinguishing between different elements and not necessarily for a specific order.
Referring to fig. 1, a structure of a light emitting diode device according to an embodiment of the present invention is shown. It should be understood that fig. 1 shows only an example of a layer structure closely related to the inventive concept of the present invention, and those skilled in the art will appreciate that the light emitting diode device may actually further include other additional structural layers. The light emitting diode structure as shown in fig. 1 includes: the back electrode layer 60, the P-type semiconductor layer 50, the active layer 40, the N-type semiconductor layer 30, and the front electrode layer 10 are sequentially stacked. The back electrode layer 60 may be an entire metal electrode layer, and the front electrode layer 10 may be a gate line electrode layer. The metal used for the front electrode and the back electrode may be any one of Ag, al, au, or Rh. The back electrode layer 60 and the P-type semiconductor layer 30 are electrically connected in a partial region to form a back electrode contact region 61, and the front electrode layer 10 and the N-type semiconductor layer are electrically connected in a partial region to form a front electrode contact region 12. The front electrode contact 12 may be selected to be of any suitable shape, for example, a circular contact; the back electrode contact region 61 may be a linear contact region or a circular contact region.
Referring to fig. 2-4, the back electrode contact regions 61 are arranged in a regular geometric pattern, such as a centrosymmetric geometric pattern, on the back electrode layer 60; correspondingly, the front electrode contact areas 12 are also arranged in a regular geometric pattern. The front electrode contact areas 12 are each located at the geometric center of the geometric figure of the rear electrode contact area 61 on a projection plane parallel to the rear electrode layer 60. By adopting the electrode layout, the uniformity of current expansion is structurally ensured, the problem of low photoelectric conversion efficiency caused by current crowding is solved, and the photoelectric conversion efficiency of the LED device is further effectively improved.
In a specific embodiment, the back electrode contact region 61 or the front electrode contact region 12 may be in direct contact with the P-type semiconductor layer 60 or the N-type semiconductor layer 30 or connected through an intermediate contact layer. Fig. 1 shows that the back electrode contact region 61 and the P-type semiconductor layer 60 are in direct contact, and the front electrode contact region 12 and the N-type semiconductor layer 30 are conductively connected by an intermediate conductive contact layer 70. The conductive contact layer 70 is, for example, a GaAs conductive layer, for improving the conductivity between the electrode and the semiconductor layer.
Preferably, the front electrode contact region 12 is in point contact with the N-type semiconductor layer 30, and the GaAs conductive contact layer is present only in the region of the point contact. Compared with the traditional structure that the N-face conductive contact layer and the N-face metal grid line are identical in pattern, the embodiment of the invention changes the GaAs part of the N-face conductive contact layer under the N-face metal grid line into point contact, reduces the absorption of GaAs to LED light emission, reduces light loss, improves light extraction efficiency, and further effectively improves the photoelectric conversion efficiency of an LED device.
According to some embodiments of the present invention, the distance from the geometric center point of the geometric pattern of the back electrode contact region 61 to the geometric corner point is equal and smaller than the lateral current diffusion length Ls of the N-type semiconductor layer, so as to further ensure the uniformity of lateral current expansion and improve the photoelectric conversion efficiency of the LED device. Ls can be estimated by the following formula:wherein t is the thickness of the transverse conductive layer, n ideal For the diode management ideal factor, K is Boltzmann constant, T is temperature, ρ is the resistivity of the transverse conducting layer, I 0 For the gate line current density, e is the electron power, and if the current lateral expansion length is smaller than Ls, the lateral current expansion can be considered to be uniform.
In a specific embodiment, the back electrode contact regions 61 are arranged in a regular polygon pattern, and the front electrode contact regions 12 are respectively located at the geometric centers of the regular polygon pattern. The regular polygon pattern may be one of regular triangle, regular quadrangle, regular hexagon, regular octagon, etc. Fig. 2 shows an example in which the back electrode contact areas 61 are arranged in a regular hexagonal pattern, wherein the back electrode contact areas 61 are each circular contact areas, and are distributed in discrete points, the point contact areas are arranged in a regular hexagonal pattern, the contact points are located at corners of the hexagon, and other areas are insulating layer isolation areas.
Fig. 3 shows another example in which the back electrode contact regions 61 are arranged in a regular hexagonal pattern, wherein the back electrode contact regions 61 are constituted by linear contact regions connected in a regular hexagonal pattern. That is, the electrode contact regions 61 are arranged in a hexagonal honeycomb structure, the electrode contact regions 61 are hexagonal sides, and the other regions are insulating layer isolation regions. Compared with point contact, the line contact can increase the contact area of the back metal-semiconductor, and can effectively reduce the requirement on the contact resistance of the p-surface metal-semiconductor. The line contact may be changed to a multipoint breakpoint contact. In other embodiments, the back electrode contact regions 61 may be arranged in a circular ring pattern or other centrosymmetric geometry, as well as for the purposes of the present invention.
Referring to fig. 1, according to some embodiments of the present invention, an insulating medium layer 20 is sandwiched between a non-electrode contact region except the front electrode contact region 12 and an N-type semiconductor layer 30 on the front electrode layer 10, and the insulating layer may be made of SiO 2 、SiON、Si 3 N 4 、MgF、Al 2 O 3 The thickness of the low-refractive index material is odd times of one quarter of the wavelength of the LED. The insulating medium layer 20 plays a role in insulating and isolating, and reflects light emitted to the electrode 60, so that the absorption of the grid line electrode to the light is reduced, and the photoelectric conversion efficiency of the device is improved. The N-type semiconductor layer 30, the insulating dielectric layer 20 and the front electrode layer 10 may form an ODR omni-directional mirror structure. In general, an ODR omni-directional reflector structure (omni-directional reflector abbreviated as ODR) comprises a metal layer, a low refractive index dielectric layer and a semiconductor layer, wherein the thickness of the low refractive index dielectric layer is an integer multiple of one fourth of the light emitting wavelength of an LED, and the ODR can achieve high reflectivity in all angles.
Compared with the traditional structure that all grid electrodes are in full contact with an N-face semiconductor layer, the embodiment of the invention removes the GaAs part of the N-face conductive contact layer under the N-face metal grid line, replaces the GaAs part with the insulating medium layer 20, and forms an ODR total reflection structure, so that the light emitted by the LED can be prevented from being absorbed by the metal of the front electrode layer 10, the light emitting loss of the LED is effectively reduced, and the photoelectric conversion efficiency of the LED is further improved.
Also, referring to fig. 1, an insulating dielectric layer 20 is sandwiched between the P-type semiconductor layer 50 and a non-electrode contact region of the back electrode layer 60 except for the back electrode contact region 61, and the P-type semiconductor layer 50, the insulating dielectric layer 20 and the back electrode layer 60 form an ODR omni-directional mirror structure. Through all being provided with the ODR structure in semiconductor body both sides for the semiconductor body is to the light of electrode transmission by upper and lower ODR structure repeated reflection, finally follows the electrode both sides and jets out, reduces the absorption of electrode to light, can improve the extraction efficiency of light. The back electrode contact region 61 may be a point contact or a line contact, and the point contact may increase the area of the back ODR, which is advantageous for reducing absorption of light by the back metal.
A flowchart of a process for manufacturing a light emitting diode device according to an embodiment of the present application is described below with reference to fig. 5.
As shown in fig. 5, when the light emitting diode device shown in fig. 1 is manufactured, a process is first performed on the p-side of the epitaxial wafer: evaporating Si02, photoetching, photoresist removing and corrosion of SiO2 outside the pattern to form circular point contact areas or line contact areas, distributing the circular point contact areas in regular hexagons, evaporating metal Au, and annealing, wherein the result is shown in fig. 2 (point contact) or fig. 3 (line contact): the circular point contact areas or line contact areas 61 of the back electrode and the P-surface semiconductor are distributed in a regular hexagon, and the surfaces of the other P surfaces are covered with an insulating layer to form an ODR structure with the back metal electrode; the side length of the regular hexagon distribution is 100 mu m. The diameter of the circular point contact area is 10 mu m; alternatively, the line width of the line distribution contact area is 10 μm.
Then, a light emitting diode device is obtained by a substrate etching or substrate stripping technique, and a front electrode 10 in point contact with an N-type semiconductor is obtained by gluing, photoetching, photoresist removing, etching a conductive contact layer such as GaAs, photoresist removing, gluing again, photoetching, photoresist removing, evaporating Si02, photoresist removing, gluing, photoetching, photoresist removing, evaporating metal Au, etching or dry etching, and annealing; the contact point is a circular area with the diameter of 10um and is positioned in the geometric center area of the back electrode, so that the distance from the front electrode contact area to any back electrode contact area is equal to or smaller than the diffusion length (Ls) of the transverse conductive layer, and the current density distribution is not influenced.
In summary, the light emitting diode structure provided by the embodiment of the invention has the following advantages or technical effects:
1) Through the surface grid line patterning point contact, the absorption effect on emergent light is reduced by reducing the area of the N-surface contact layer;
2) The method of evaporating the patterned insulating layer on the surface between the grid line and the epitaxial layer prevents current from flowing to the lower part of the electrode, and avoids light emitted by the active region from being absorbed by the electrode;
3) The light emergent under the grid line can be almost totally reflected back to the active layer through the surface ODR structure and is absorbed by the active layer and then emergent, so that the light emergent efficiency is not reduced due to the fact that the light emergent efficiency is not absorbed by the surface electrode;
4) Through the patterning treatment of the electrode contact areas of the N surface and the P surface, the transverse expansion length of the current is ensured to be smaller than the diffusion length Ls, the area occupation ratio of the ODR of the P surface is greatly increased while the current distribution of the device is not influenced, and the reflectivity of the P surface is improved, so that the efficiency performance of the device is improved.
The foregoing embodiments are merely illustrative of the principles and configurations of the present invention, and are not intended to be limiting, it will be appreciated by those skilled in the art that any changes and modifications may be made without departing from the general inventive concept. The protection scope of the present invention should be defined as the scope of the claims of the present application.
Claims (10)
1. A light emitting diode structure comprising: a back electrode layer, a P-type semiconductor layer, an active layer, an N-type semiconductor layer, and a front electrode layer, which are sequentially stacked,
the back electrode layer and the P-type semiconductor layer are electrically connected in a partial region to form a back electrode contact region, and the back electrode contact region is arranged on the back electrode layer to form a regular geometric figure;
the front electrode layer and the N-type semiconductor layer are electrically connected in a partial area to form a plurality of regularly arranged front electrode contact areas, and the front electrode contact areas are respectively positioned at the geometric centers of geometric figures of the back electrode contact areas on a projection plane parallel to the back electrode layer.
2. The light emitting diode structure of claim 1, wherein the back electrode contact regions are arranged in a regular polygon pattern, the front electrode contact regions being located at a geometric center of the regular polygon pattern, respectively.
3. The light emitting diode structure of claim 1, wherein the back electrode contact region is comprised of discrete point-like contact regions arranged in a regular polygon pattern.
4. The light emitting diode structure of claim 1, wherein the back electrode contact region is comprised of linear contact regions connected in a regular polygon pattern or a circular ring pattern.
5. The light emitting diode structure of claim 1, wherein the back electrode contact regions are arranged in a regular hexagonal pattern.
6. The light emitting diode structure of claim 1, wherein a geometric center point to geometric corner point distance of the geometric pattern of the back electrode contact region is equal and less than a lateral current diffusion length of the N-type semiconductor layer.
7. The light emitting diode structure of claim 1, wherein a GaAs conductive contact layer is between the front electrode contact region and the N-face semiconductor layer. .
8. The light emitting diode structure of any one of claims 1-7, wherein an insulating dielectric layer is sandwiched between a P-type semiconductor layer and a non-electrode contact region on the back electrode layer other than the back electrode contact region, the P-type semiconductor layer, the insulating dielectric layer, and the back electrode layer forming an ODR total reflection structure.
9. The light-emitting diode structure according to any one of claims 1-7, wherein an insulating medium layer is sandwiched between a non-electrode contact region other than a front electrode contact region on the front electrode layer and an N-type semiconductor layer, and the N-type semiconductor layer, the insulating medium layer and the front electrode layer form an ODR total reflection structure.
10. A light emitting diode structure according to any preceding claim, wherein the back electrode layer is a full-face metal electrode layer and the front electrode layer is a gate line electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311789290.8A CN117747731A (en) | 2023-12-22 | 2023-12-22 | Light-emitting diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311789290.8A CN117747731A (en) | 2023-12-22 | 2023-12-22 | Light-emitting diode structure |
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| Publication Number | Publication Date |
|---|---|
| CN117747731A true CN117747731A (en) | 2024-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311789290.8A Pending CN117747731A (en) | 2023-12-22 | 2023-12-22 | Light-emitting diode structure |
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| CN (1) | CN117747731A (en) |
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2023
- 2023-12-22 CN CN202311789290.8A patent/CN117747731A/en active Pending
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