CN117747501A - Wafer temperature measuring device and use method thereof - Google Patents
Wafer temperature measuring device and use method thereof Download PDFInfo
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- CN117747501A CN117747501A CN202311751030.1A CN202311751030A CN117747501A CN 117747501 A CN117747501 A CN 117747501A CN 202311751030 A CN202311751030 A CN 202311751030A CN 117747501 A CN117747501 A CN 117747501A
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- wafer
- temperature measuring
- cavity
- gas
- wafer temperature
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 238000007789 sealing Methods 0.000 claims abstract description 32
- 238000004891 communication Methods 0.000 claims abstract description 7
- 238000009529 body temperature measurement Methods 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 12
- 239000000110 cooling liquid Substances 0.000 claims description 10
- 239000002826 coolant Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Abstract
The application relates to the technical field of semiconductor manufacturing process equipment, and discloses a wafer temperature measuring device, which comprises: a main body having a cavity formed therein; a gas control system in communication with the body for delivering gas into the cavity of the body; the sealing connection part is arranged on the main body and is used for sealing and connecting the main body to a reaction cavity of the semiconductor equipment so that the cavity is communicated with the reaction cavity of the semiconductor equipment; the temperature measuring equipment is arranged outside the main body and is used for measuring the temperature of the wafer in the reaction cavity of the semiconductor equipment. The method realizes the direct measurement of the surface temperature of the wafer in the actual process under the high-temperature and vacuum environment, and can more truly and accurately measure the surface temperature and the temperature distribution of the wafer in the reaction chamber in the actual process. The application also discloses a use method of the wafer temperature measuring device.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing process equipment, for example to a wafer temperature measuring device and a using method thereof.
Background
At present, most of semiconductor process procedures are required to be in a high-temperature and vacuum environment, and the requirements on the high-temperature and vacuum environment are very strict so as to meet the requirements of uniform temperature and uniform process result of the whole wafer surface, thereby ensuring high yield.
In the related art, a special temperature sensor wafer TC-wafer is generally used to replace a wafer and placed in a reaction chamber with a high temperature and vacuum environment, and the surface temperature of the wafer in an actual process is replaced by the surface temperature of the TC-wafer to indirectly measure the surface temperature and the temperature distribution of the wafer in the reaction chamber in the actual process.
In the process of implementing the embodiments of the present disclosure, it is found that at least the following problems exist in the related art:
the measurement method in the related art cannot directly measure the temperature of the surface of the wafer, so that a gap exists between the indirectly measured surface temperature of the wafer and the actual surface temperature of the wafer, and the surface temperature and the temperature distribution of the wafer in the reaction chamber in the actual process cannot be accurately measured.
It should be noted that the information disclosed in the foregoing background section is only for enhancing understanding of the background of the present application and thus may include information that does not form the prior art that is already known to those of ordinary skill in the art.
Disclosure of Invention
The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview, and is intended to neither identify key/critical elements nor delineate the scope of such embodiments, but is intended as a prelude to the more detailed description that follows.
The embodiment of the disclosure provides a wafer temperature measuring device and a using method thereof, which can directly and accurately measure the surface temperature of a wafer in a high-temperature and vacuum actual process environment.
In some embodiments, the wafer temperature measurement device includes:
a main body having a cavity formed therein;
a gas control system in communication with the body for delivering gas into the cavity of the body;
the sealing connection part is arranged on the main body and is used for sealing and connecting the main body to a reaction cavity of the semiconductor equipment so that the cavity is communicated with the reaction cavity of the semiconductor equipment;
the temperature measuring equipment is arranged outside the main body and is used for measuring the temperature of the wafer in the reaction cavity of the semiconductor equipment.
Optionally, an air inlet is arranged on the main body, and the air inlet is communicated with the air control system, so that the air control system controls air to be conveyed into the cavity.
Optionally, the body includes:
and the gas homogenizing structure is arranged corresponding to the gas inlet and is used for uniformly supplying the gas introduced through the gas inlet into the reaction cavity of the semiconductor device.
Optionally, the body includes:
and the window is used for enabling the temperature measuring equipment to detect the surface temperature of the wafer in the reaction cavity through the window.
Optionally, the window is made of transparent sealing material containing high-transmittance infrared light glass, and a buffer structure is arranged at the periphery of the window.
Optionally, the body includes:
the bracket is arranged outside the window and detachably connected with the temperature measuring equipment.
Optionally, the gas control system is an independent module, is configured with a control valve, a flowmeter and a pressure gauge, and is matched with an electrical point location and software logic to realize automatic gas flow control.
Optionally, the wafer temperature measuring device further includes:
a cooling system including a coolant pipe into which a circulating cooling liquid is introduced;
the groove extends along the side wall of the body in a spiral shape, and the cooling liquid pipeline is placed in the groove so as to be wound on the side wall of the body.
Optionally, the external shape of the main body is any one of a cone shape, a cylinder shape and a cube shape.
In some embodiments, the method for using the wafer temperature measurement device includes:
opening a cover plate of the semiconductor device, placing the wafer temperature measuring device in a cavity opening of a reaction cavity of the semiconductor device and sealing and connecting the wafer temperature measuring device through a sealing connecting part;
vacuumizing a reaction cavity of the semiconductor device and heating the cavity environment to a required process temperature;
starting a cooling system of the wafer temperature measuring device to cool the body of the wafer temperature measuring device;
uniformly conveying gas into the body of the wafer temperature measuring device through a gas control system and controlling the gas flow;
and under the condition that the reaction cavity reaches the same process environment as the actual process, the temperature measuring equipment is opened, and the surface temperature of the wafer in the reaction cavity is directly measured through the window of the body.
The wafer temperature measuring device and the use method thereof provided by the embodiment of the disclosure can realize the following technical effects:
the temperature measuring equipment is arranged at the top of the main body, the sealing connection part for sealing and mounting the main body to the reaction cavity of the semiconductor equipment is arranged at the same time, and gas is conveyed into the cavity of the main body through the gas control system, so that the surface temperature of the wafer in the actual process in the high-temperature and vacuum environment can be directly measured, and the surface temperature and the temperature distribution of the wafer in the reaction cavity in the actual process can be measured more truly and accurately. In addition, the wafer temperature measuring device has higher equipment universality and can be used for various semiconductor equipment.
The foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which like reference numerals refer to similar elements, and in which:
FIG. 1 is a schematic diagram of a wafer temperature measurement device according to an embodiment of the disclosure;
FIG. 2 is a schematic diagram of another wafer temperature measurement device according to an embodiment of the disclosure;
FIG. 3 is a schematic diagram of a body of a wafer temperature measurement device according to an embodiment of the disclosure;
FIG. 4 is a schematic view of a structure of a body of another wafer temperature measurement device according to an embodiment of the present disclosure;
FIG. 5 is a schematic view of a body of another wafer temperature measurement device according to an embodiment of the present disclosure;
FIG. 6 is a flow chart of a method of using a wafer temperature measurement device according to an embodiment of the present disclosure;
FIG. 7 is an assembly schematic diagram of a wafer temperature measurement device according to an embodiment of the present disclosure.
Reference numerals:
1-a main body; 2-a gas control system; 3-sealing the connection; 4-temperature measuring equipment; 5-air inlet; 6-homogenizing structure; 7-a table top; 8-window; 9-a bracket; 10-a cooling system; 11-a reaction chamber; 12-cover plate.
Detailed Description
So that the manner in which the features and techniques of the disclosed embodiments can be understood in more detail, a more particular description of the embodiments of the disclosure, briefly summarized below, may be had by reference to the appended drawings, which are not intended to be limiting of the embodiments of the disclosure. In the following description of the technology, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, one or more embodiments may still be practiced without these details. In other instances, well-known structures and devices may be shown simplified in order to simplify the drawing.
The terms first, second and the like in the description and in the claims of the embodiments of the disclosure and in the above-described figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe embodiments of the present disclosure. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion.
In the embodiments of the present disclosure, the terms "upper", "lower", "inner", "middle", "outer", "front", "rear", and the like indicate an azimuth or a positional relationship based on that shown in the drawings. These terms are used primarily to better describe embodiments of the present disclosure and embodiments thereof and are not intended to limit the indicated device, element, or component to a particular orientation or to be constructed and operated in a particular orientation. Also, some of the terms described above may be used to indicate other meanings in addition to orientation or positional relationships, for example, the term "upper" may also be used to indicate some sort of attachment or connection in some cases. The specific meaning of these terms in the embodiments of the present disclosure will be understood by those of ordinary skill in the art in view of the specific circumstances.
In addition, the terms "disposed," "connected," "secured" and "affixed" are to be construed broadly. For example, "connected" may be in a fixed connection, a removable connection, or a unitary construction; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements, or components. The specific meaning of the above terms in the embodiments of the present disclosure may be understood by those of ordinary skill in the art according to specific circumstances.
The term "plurality" means two or more, unless otherwise indicated.
In the embodiment of the present disclosure, the character "/" indicates that the front and rear objects are an or relationship. For example, A/B represents: a or B.
The term "and/or" is an associative relationship that describes an object, meaning that there may be three relationships. For example, a and/or B, represent: a or B, or, A and B.
It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be combined with each other.
As shown in fig. 1, an embodiment of the present disclosure provides a wafer temperature measuring device, including a main body 1, a gas control system 2, a sealing connection part 3, and a temperature measuring apparatus 4, wherein a cavity is formed inside the main body 1. The gas control system 2 is in communication with the body 1 for delivering gas into the cavity of the body 1. The sealing connection part 3 is provided on the main body 1 for sealing and connecting the main body 1 to the reaction chamber 11 of the semiconductor device so that the chamber communicates with the reaction chamber 11 of the semiconductor device. The temperature measuring device 4 is disposed outside the main body 1 for measuring the temperature of the wafer in the reaction chamber 11 of the semiconductor device.
By adopting the wafer temperature measuring device provided by the embodiment of the disclosure, the temperature measuring equipment is arranged at the top of the main body, the sealing connection part for sealing and mounting the main body to the reaction cavity of the semiconductor equipment is arranged at the same time, and the gas is conveyed into the cavity of the main body through the gas control system, so that the surface temperature of the wafer in the actual process in the high-temperature and vacuum environment can be directly measured, and the surface temperature and the temperature distribution of the wafer in the reaction cavity in the actual process can be more truly and accurately measured. In addition, the wafer temperature measuring device has higher equipment universality and can be used for various semiconductor equipment.
Optionally, the main body of the present application adopts a sealing structure, and the material of the main body may be aluminum, and the thickness of the main body is 5-20mm. The temperature measuring device of the application can be an infrared temperature measuring instrument. The sealing connection part of the application can be a disc-shaped connecting piece with a sealing ring arranged on the inner side, and is used for sealing connection between the temperature measuring equipment and the reaction cavity, and the connecting structure arranged on the disc-shaped connecting piece is a threaded hole.
In the embodiment of the present application, as shown in fig. 1 and 2, the main body 1 of the present application includes an air inlet 5, an air homogenizing structure 6, a table 7, a window 8 and a support 9, where the air inlet 5 is disposed on the main body 1 and is in communication with the air control system 2, so that the air control system 2 controls air to deliver the air into the cavity of the main body 1 through the air inlet 5 according to a set air flow rate. The gas homogenizing structure 6 is disposed on the main body 1 and is disposed corresponding to the gas inlet 5, and is used for uniformly supplying the gas introduced through the gas inlet 5 into the reaction chamber 11 of the semiconductor device from the top to the bottom of the chamber of the main body 1. The table top 7 is positioned above the gas homogenizing structure 6 and is connected with the gas homogenizing structure 6 in a sealing way. The window 8 is fixedly installed on the table 7, so that the temperature measuring device 4 can detect the surface temperature of the wafer in the reaction chamber 11 through the window 8. The bracket 9 is arranged outside the window 8 and is detachably connected with the temperature measuring device 4. The bracket 9 can enable the temperature of the infrared temperature measuring instrument to be placed above the device for long-time measurement, and is convenient for taking down the infrared temperature measuring instrument, so that a data card for storing data in the infrared temperature measuring instrument can be taken out for analyzing the measurement result.
Optionally, window 8 of the present application is fabricated from a transparent sealing material comprising high infrared light transmitting glass, and a buffer structure is provided at the periphery of window 8 for avoiding damage to the high infrared light transmitting glass due to excessive fixation. The high infrared light-transmitting glass is used for the infrared temperature measuring instrument to efficiently detect the temperature inside the cavity through the window 8.
Thus, the transparent sealing structure with high light transmittance is arranged, and the transparent sealing structure has a high perspective effect on infrared rays. So that the infrared temperature measuring instrument can efficiently detect the temperature in the reaction cavity through the window.
In the embodiment of the present application, as shown in fig. 1 and 2, the gas control system 2 of the present application is an independent module, and may be placed at a remote end, configured with a control valve, a flow meter, and a pressure gauge, and implement automatic gas flow control in cooperation with electrical points and software logic.
Specifically, the air inlet 5 of the wafer temperature measuring device is arranged at the top end of the main body 1, and through the arrangement of the air homogenizing structure 6, air can be uniformly injected into the reaction cavity 11, so that the scene of the real process air inlet cavity is simulated. Meanwhile, the gas control system 2 of the application uses components such as a control valve, a flowmeter, a pressure gauge and the like to realize automatic gas flow control by matching with electrical points and software logic. So as to meet the environments of air inlet flow, pressure control and the like in different processes of different semiconductor devices.
In the embodiment of the present application, as shown in fig. 1 and 2, the wafer temperature measuring device of the present application further includes a cooling system 10 and a groove (not shown in the drawings), where the cooling system 10 may be a cooling liquid pipe or a fan into which a circulating cooling liquid is introduced. The groove extends along the side wall of the body in a spiral shape, and the cooling liquid pipeline is arranged in the groove so as to be wound on the side wall of the body.
Specifically, the cooling system 10 of the present application may be disposed on a side wall of the main body 1, and may be wound with a cooling liquid pipe to be introduced with a circulating cooling liquid outside, or may be in a form of heat dissipation by a fan. Preferably a cooling liquid pipeline, the cooling effect is excellent and easy to realize. At this time, the coolant pipe is spirally wound around the sealing structure of the main body 1, and the number of turns is preferably 1 to 10.
Alternatively, the coolant tube may be 4-20mm in diameter. The joint of the coolant pipeline adopts a self-breaking type quick connector, water supply is realized by the butt joint of the two self-breaking type quick connectors, water supply is stopped by the disconnection of the two self-breaking type quick connectors, water is conveniently inserted, and automatic water sealing is realized by the disconnection. Of course, it should be noted that the cooling system 10 is a protection for the present apparatus to accommodate different process technologies for different semiconductor devices.
In the embodiment of the present application, as shown in connection with fig. 3 to 5, the external shape of the main body of the present application is any one of a cone shape, a cylinder shape, and a cube shape. At the same time, the same window shape is provided corresponding to the outer shape of the main body.
Referring to fig. 6, an embodiment of the disclosure provides a method for using a wafer temperature measurement device, including:
step 601: the cover plate of the semiconductor device is opened, and the wafer temperature measuring device is placed at the cavity opening of the reaction cavity of the semiconductor device and is connected in a sealing way through the sealing connecting part.
Step 602: the reaction chamber of the semiconductor device is evacuated and the chamber environment is heated to a desired process temperature.
Step 603: and starting a cooling system of the wafer temperature measuring device to cool the body of the wafer temperature measuring device.
Step 604: and uniformly conveying gas into the body of the wafer temperature measuring device through the gas control system and controlling the gas flow.
Step 605: and under the condition that the reaction cavity reaches the same process environment as the actual process, the temperature measuring equipment is opened, and the surface temperature of the wafer in the reaction cavity is directly measured through the window of the body.
In the embodiment of the present application, as shown in fig. 7, the wafer temperature measuring device of the present application opens the cover plate 12 of the semiconductor device under test when in use. And placing the wafer temperature measuring device at the cavity opening and sealing the wafer temperature measuring device, and then vacuumizing the lower part of the reaction cavity 11 normally, wherein a heating device in the reaction cavity 11 heats the cavity to the required process temperature. At the same time, the cooling system 10 of the wafer temperature measuring device is started to cool down. Through the air inlet control system, nitrogen is uniformly conveyed into the wafer temperature measuring device, and the flow is controlled, so that the process environments such as air inflow, vacuum degree, process temperature and the like which are the same as those of the actual process are achieved. At this time, the temperature measuring device 4 at the top is started, so that the surface temperature of the wafer in the reaction chamber 11 can be directly measured.
Therefore, the surface temperature of the wafer in the real process environment can be directly measured, and parameters such as the temperature distribution condition, the temperature rise curve and the like of the surface of the wafer can be accurately collected.
By adopting the using method of the wafer temperature measuring device provided by the embodiment of the disclosure, the surface temperature of the wafer in different semiconductor devices can be measured, and when the semiconductor devices need to be replaced, the cover plate at the top of the semiconductor device is only required to be opened, and the wafer temperature measuring device is placed at the cavity opening of the semiconductor device to be measured and is connected in a sealing way through the sealing connecting part. Then, the vacuum pumping system of the semiconductor equipment to be tested is utilized, the heating system provides a high-temperature vacuum environment, and when the air pressure, the temperature and the like reach the process conditions, the temperature of the semiconductor equipment in the process environment can be measured.
The above description and the drawings illustrate embodiments of the disclosure sufficiently to enable those skilled in the art to practice them. Other embodiments may include structural and other modifications. The embodiments represent only possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in, or substituted for, those of others. The embodiments of the present disclosure are not limited to the structures that have been described above and shown in the drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.
Claims (10)
1. A wafer temperature measurement device, comprising:
a main body having a cavity formed therein;
a gas control system in communication with the body for delivering gas into the cavity of the body;
the sealing connection part is arranged on the main body and is used for sealing and connecting the main body to a reaction cavity of the semiconductor equipment so that the cavity is communicated with the reaction cavity of the semiconductor equipment;
the temperature measuring equipment is arranged outside the main body and is used for measuring the temperature of the wafer in the reaction cavity of the semiconductor equipment.
2. The wafer temperature measurement device of claim 1, wherein the body is provided with an air inlet, the air inlet being in communication with the gas control system such that the gas control system controls the delivery of gas into the chamber.
3. The wafer temperature measurement device of claim 2, wherein the body comprises:
and the gas homogenizing structure is arranged corresponding to the gas inlet and is used for uniformly supplying the gas introduced through the gas inlet into the reaction cavity of the semiconductor device.
4. The wafer temperature measurement device of claim 1, wherein the body comprises:
and the window is used for enabling the temperature measuring equipment to detect the surface temperature of the wafer in the reaction cavity through the window.
5. The wafer temperature measurement device of claim 4, wherein a buffer structure is disposed around the window.
6. The wafer temperature measurement device of claim 4, wherein the body comprises:
the bracket is arranged outside the window and detachably connected with the temperature measuring equipment.
7. The wafer temperature measurement device of claim 1, wherein the gas control system is an independent module configured with control valves, flow meters and pressure gauges and cooperates with electrical sites and software logic to achieve automated gas flow control.
8. The wafer temperature measurement device of claim 1, further comprising:
a cooling system including a coolant pipe into which a circulating cooling liquid is introduced;
the groove extends along the side wall of the body in a spiral shape, and the cooling liquid pipeline is placed in the groove so as to be wound on the side wall of the body.
9. The wafer temperature measurement device according to any one of claims 1 to 8, wherein the outer shape of the main body is any one of a cone shape, a cylinder shape and a cube shape.
10. The use method of the wafer temperature measuring device is characterized by comprising the following steps:
opening a cover plate of the semiconductor device, placing the wafer temperature measuring device according to any one of claims 1 to 9 at a cavity opening of a reaction cavity of the semiconductor device and sealing and connecting the wafer temperature measuring device through a sealing connecting part;
vacuumizing a reaction cavity of the semiconductor device and heating the cavity environment to a required process temperature;
starting a cooling system of the wafer temperature measuring device to cool the body of the wafer temperature measuring device;
uniformly conveying gas into the body of the wafer temperature measuring device through a gas control system and controlling the gas flow;
and under the condition that the reaction cavity reaches the same process environment as the actual process, the temperature measuring equipment is opened, and the surface temperature of the wafer in the reaction cavity is directly measured through the window of the body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311751030.1A CN117747501A (en) | 2023-12-18 | 2023-12-18 | Wafer temperature measuring device and use method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311751030.1A CN117747501A (en) | 2023-12-18 | 2023-12-18 | Wafer temperature measuring device and use method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117747501A true CN117747501A (en) | 2024-03-22 |
Family
ID=90252205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311751030.1A Pending CN117747501A (en) | 2023-12-18 | 2023-12-18 | Wafer temperature measuring device and use method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117747501A (en) |
-
2023
- 2023-12-18 CN CN202311751030.1A patent/CN117747501A/en active Pending
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