CN117742018A - System on chip and method of manufacturing the same - Google Patents
System on chip and method of manufacturing the same Download PDFInfo
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- CN117742018A CN117742018A CN202311724120.1A CN202311724120A CN117742018A CN 117742018 A CN117742018 A CN 117742018A CN 202311724120 A CN202311724120 A CN 202311724120A CN 117742018 A CN117742018 A CN 117742018A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 315
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 239000000463 material Substances 0.000 claims abstract description 72
- 230000000694 effects Effects 0.000 claims abstract description 31
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 19
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 18
- 239000006185 dispersion Substances 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 25
- 229910052732 germanium Inorganic materials 0.000 description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000005693 optoelectronics Effects 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 3
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 235000019837 monoammonium phosphate Nutrition 0.000 description 3
- 235000019796 monopotassium phosphate Nutrition 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- -1 etc. Substances 0.000 description 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
Embodiments of the present disclosure provide a system-on-chip and a method of manufacturing the same, the system-on-chip including a substrate and an electro-optic modulator, the electro-optic modulator including: an input optical waveguide located over the substrate; an output optical waveguide located above the substrate and juxtaposed with the input optical waveguide in a first direction; the first direction is parallel to the plane of the substrate; a modulation waveguide positioned above the input optical waveguide and the output optical waveguide; the projection of the input end of the modulation waveguide and the projection of the input optical waveguide on the substrate are at least partially overlapped, the projection of the output end of the modulation waveguide and the projection of the output optical waveguide on the substrate are at least partially overlapped, and the input end and the output end of the modulation waveguide are opposite along the first direction; the material of the modulation waveguide comprises a material with a linear electro-optic effect; the first electrode structures are positioned on two opposite sides of the modulation waveguide along the second direction; the second direction is parallel to the plane of the substrate, and the second direction intersects the first direction.
Description
Technical Field
The present disclosure relates to the field of optical communication devices, and relates to, but is not limited to, a system-on-chip and a method of manufacturing the same.
Background
Silicon photonics is a new generation of technology for optical device development and integration based on silicon and silicon-based materials, using existing complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) processes. The silicon photon technology combines the characteristics of ultra-large scale and ultra-high precision manufacture of integrated circuit technology and the advantages of ultra-high speed and ultra-low power consumption of photon technology, and is a subversion technology for coping with the failure of moore's law. This combination is advantageous in terms of scalability in semiconductor wafer fabrication, and thus can reduce costs.
In optoelectronic systems, an electro-optic modulator is a critical component for achieving electro-optic signal conversion, the performance of which determines the transmission rate of optical communications. However, the bandwidth of the current electro-optic modulator is difficult to meet the transmission rate requirements of the next generation high-speed optical module.
Disclosure of Invention
In view of the foregoing, embodiments of the present disclosure provide a system on a chip and a method of manufacturing the same.
In a first aspect, embodiments of the present disclosure provide a system-on-a-chip comprising a substrate and an electro-optic modulator, the electro-optic modulator comprising:
an input optical waveguide located over the substrate;
an output optical waveguide located above the substrate and juxtaposed with the input optical waveguide along a first direction; wherein the first direction is parallel to a plane in which the substrate is located;
a modulation waveguide located above the input optical waveguide and the output optical waveguide; the input end of the modulation waveguide and the projection of the input optical waveguide on the substrate are at least partially overlapped, the output end of the modulation waveguide and the projection of the output optical waveguide on the substrate are at least partially overlapped, and the input end of the modulation waveguide and the output end of the modulation waveguide are opposite along the first direction; the material of the modulation waveguide comprises a material with a linear electro-optic effect;
the first electrode structures are positioned at two opposite sides of the modulation waveguide along the second direction; the second direction is parallel to a plane where the substrate is located, and the second direction intersects the first direction.
In some embodiments, the electro-optic modulator further comprises:
an intermediate optical waveguide between the substrate and the modulation waveguide; wherein a first end of the intermediate optical waveguide is connected to the input optical waveguide, a second end of the intermediate optical waveguide is connected to the output optical waveguide, and the first end and the second end are opposite in the first direction; the intermediate optical waveguide, the input optical waveguide and the output optical waveguide are of the same material.
In some embodiments, the material of the intermediate optical waveguide comprises a material having a carrier dispersion effect; the electro-optic modulator further comprises:
a second electrode structure located between the substrate and the first electrode structure; wherein the second electrode structure is located at two opposite sides of the intermediate optical waveguide along the second direction.
In some embodiments, the system on a chip further comprises:
the input end of the main path waveguide is connected with the output optical waveguide;
the first photoelectric detector is connected with the output end of the main path waveguide; the first photoelectric detector is used for converting the optical signal output by the main waveguide into an electric signal.
In some embodiments, the system on a chip further comprises:
the input end of the branch waveguide is coupled with the main waveguide;
the second photoelectric detector is connected with the output end of the branch waveguide; the second photoelectric detector is used for monitoring the intensity and/or frequency of the optical signal transmitted in the main waveguide.
In some embodiments, the system on a chip further comprises:
an on-chip optical device coupled between the input and output ends of the main waveguide; wherein the on-chip optical device includes at least one of a wavelength division multiplexer, a variable optical attenuator, and an optical amplifier.
In some embodiments, the material of the modulating waveguide comprises lead zirconate titanate.
In a second aspect, embodiments of the present disclosure provide a method of manufacturing a system-on-chip, comprising:
providing a substrate;
forming an input optical waveguide and an output optical waveguide arranged in parallel along a first direction over the substrate; wherein the first direction is parallel to a plane in which the substrate is located;
forming a modulation waveguide over the input optical waveguide and the output optical waveguide; the input end of the modulation waveguide and the projection of the input optical waveguide on the substrate are at least partially overlapped, the output end of the modulation waveguide and the projection of the output optical waveguide on the substrate are at least partially overlapped, and the input end of the modulation waveguide and the output end of the modulation waveguide are opposite along the first direction; the material of the modulation waveguide comprises a material with a linear electro-optic effect;
forming a first electrode structure on two opposite sides of the modulation waveguide along a second direction; the second direction is parallel to a plane where the substrate is located, and the second direction intersects the first direction.
In some embodiments, the method of manufacturing further comprises:
forming an intermediate optical waveguide over the substrate prior to forming the modulated waveguide; wherein a first end of the intermediate optical waveguide is connected to the input optical waveguide, a second end of the intermediate optical waveguide is connected to the output optical waveguide, and the first end and the second end are opposite in the first direction; the intermediate optical waveguide, the input optical waveguide and the output optical waveguide are made of the same material;
forming a second electrode structure over the substrate prior to forming the first electrode structure; wherein the second electrode structure is located at two opposite sides of the intermediate optical waveguide along the second direction.
In some embodiments, the method of manufacturing further comprises:
forming a main waveguide; the input end of the main path waveguide is connected with the output optical waveguide;
forming a branch waveguide; the input end of the branch waveguide is coupled with the main waveguide;
forming a first photoelectric detector connected with the output end of the main path waveguide; the first photoelectric detector is used for converting the optical signal output by the main waveguide into an electric signal;
forming a second photodetector connected to the output end of the branch waveguide; the second photoelectric detector is used for monitoring the intensity and/or frequency of the optical signal transmitted in the main waveguide.
In an embodiment of the present disclosure, the modulation waveguide is located above the input optical waveguide and the output optical waveguide, and the modulation waveguide comprises a material having a linear electro-optic effect. On one hand, the bandwidth and the modulation rate of the electro-optic modulator can be greatly improved because the modulation waveguide is made of a material with a linear electro-optic effect; on the other hand, the modulation waveguide, the input optical waveguide and the output optical waveguide can be directly manufactured on the substrate, namely, the electro-optical modulator can be directly integrated in the system-on-chip, so that the integration level of the system-on-chip is improved.
Drawings
FIGS. 1a and 1b are schematic diagrams of a system-on-chip provided by embodiments of the present disclosure;
FIGS. 2a and 2b are schematic diagrams of another system-on-chip provided by an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of yet another system-on-chip provided by an embodiment of the present disclosure;
FIG. 4 is a flow chart of steps of a method of manufacturing a system-on-chip provided in an embodiment of the present disclosure;
fig. 5 is a flow chart of steps of a silicon photofabrication process for forming a system-on-chip with lead zirconate-titanate modulator according to an embodiment of the present disclosure.
Detailed Description
In order to facilitate an understanding of the present disclosure, exemplary embodiments of the present disclosure will be described in more detail below with reference to the associated drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure may be practiced without one or more of these details. In some embodiments, some technical features well known in the art have not been described in order to avoid obscuring the present disclosure; that is, not all features of an actual implementation may be described in detail herein, nor are well-known functions and constructions described in detail.
Generally, the term may be understood, at least in part, from the use of context. For example, the term "one or more" as used herein may be used to describe any feature, structure, or characteristic in a singular sense or may be used to describe a combination of features, structures, or characteristics in a plural sense, depending at least in part on the context. Similarly, terms such as "a" or "an" may also be understood to convey a singular usage or a plural usage, depending at least in part on the context. Additionally, the term "based on" may be understood as not necessarily intended to convey an exclusive set of factors, and may instead allow for the presence of additional factors that are not necessarily explicitly described, again depending at least in part on the context.
Unless otherwise defined, the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
For a thorough understanding of the present disclosure, detailed steps and detailed structures will be presented in the following description in order to illustrate the technical aspects of the present disclosure. Preferred embodiments of the present disclosure are described in detail below, however, the present disclosure may have other implementations in addition to these detailed descriptions. It should be appreciated that in the drawings, in order to clearly illustrate each structure, dimensional relationships of each structure may be different from actual structures.
In some embodiments, silicon-based electro-optic modulators may be compatible with well-established complementary metal oxide semiconductor processes and thus may be fabricated in large scale processes to reduce the fabrication costs of the device. Since silicon materials are centrosymmetric crystals, there is no linear electro-optic effect, and therefore carrier dispersion effects are typically used to accomplish high-speed electro-optic modulation of silicon substrates. However, the silicon-based electro-optic modulator based on the carrier dispersion effect is limited by the migration rate of carriers, so that the electro-optic bandwidth of hundreds of GHz is difficult to realize, and the transmission rate requirement of single wave 200Gbit/s of the next-generation high-speed optical module cannot be met. There is therefore a need to develop a new electro-optic modulator to achieve higher rate modulation while retaining the high integration advantages of silicon-based optoelectronics.
As shown in fig. 1a and 1b, embodiments of the present disclosure provide a system-on-chip 100, the system-on-chip 100 comprising a substrate 110 and an electro-optic modulator 120, the electro-optic modulator 120 comprising:
an input optical waveguide 121 located over the substrate 110;
an output optical waveguide 122 located above the substrate 110 and juxtaposed with the input optical waveguide 121 in a first direction; wherein the first direction is parallel to a plane in which the substrate 110 is located;
a modulation waveguide 123 located above the input optical waveguide 121 and the output optical waveguide 122; wherein the input end of the modulation waveguide 123 and the projection of the input optical waveguide 121 on the substrate 110 at least partially coincide, the output end of the modulation waveguide 123 and the projection of the output optical waveguide 122 on the substrate 110 at least partially coincide, the input end of the modulation waveguide 123 and the output end of the modulation waveguide 123 are opposite in the first direction; the material of the modulation waveguide 123 includes a material having a linear electro-optic effect;
a first electrode structure 124 located at two opposite sides of the modulation waveguide 123 along the second direction; the second direction is parallel to a plane in which the substrate 110 is located, and the second direction intersects the first direction.
In an embodiment of the present disclosure, the system-on-chip 100 includes a substrate 110 and an electro-optic modulator 120. Here the system-on-chip 100 may comprise a plurality of optoelectronic devices formed on one wafer (substrate), i.e. the system-on-chip 100 may comprise other optoelectronic devices in addition to the electro-optical modulator 120. The material of the substrate 110 may include elemental semiconductor materials such as silicon (Si), germanium (Ge), etc., compound semiconductor materials such as gallium nitride (GaN), gallium arsenide (GaAs), or indium phosphide (InP), etc., and composite semiconductor materials such as silicon germanium (SiGe), silicon on insulator (Silicon on Insulator, SOI), germanium on insulator (Germanium on Insulator, geOI), etc. The substrate 110 may also be doped or include doped and undoped regions in the substrate. In particular, the substrate 110 may also be a substrate of a silicon photo chip to be compatible with CMOS technology and optoelectronic devices. The electro-optical modulator 120 comprises an input optical waveguide 121, an output optical waveguide 122, a modulation waveguide 123 and a first electrode structure 124. It should be understood that, in the drawings, in order to clearly show each layer structure, dimensional proportion relation of each layer structure may be different from that of an actual structure.
Here and hereinafter, the first direction and the second direction are directions parallel to a plane in which the substrate 110 is located, and the first direction and the second direction intersect. For clarity of description of the present disclosure, the following embodiments will be described with reference to the first direction being the X direction in the drawing, the second direction being the Y direction in the drawing, and the Z direction being the direction perpendicular to the plane of the substrate 110. It should be noted, however, that the description of the directions in the following examples is only for the purpose of illustrating the present disclosure and is not intended to limit the scope of the present disclosure.
The input optical waveguide 121 and the output optical waveguide 122 are located in the same plane above the substrate 110, and the input optical waveguide 121 and the output optical waveguide 122 may extend in the X direction, e.g., the input optical waveguide 121 and the output optical waveguide 122 may be located on the same straight line parallel to the X direction. The input optical waveguide 121 and the output optical waveguide 122 may be continuous or discontinuous in the X direction, that is, the input optical waveguide 121 and the output optical waveguide 122 may be the same waveguide continuous in the X direction, or there is a space between the input optical waveguide 121 and the output optical waveguide 122. The materials of the input optical waveguide 121 and the output optical waveguide 122 may include silicon, germanium, etc. compatible with CMOS processes, for example, the input optical waveguide 121 and the output optical waveguide 122 are silicon waveguides.
The modulation waveguide 123 may be located above the input optical waveguide 121 and the output optical waveguide 122. Specifically, the extending direction of the modulation waveguide 123 may coincide with the input optical waveguide 121 and the output optical waveguide 122, such as the X-direction, the modulation waveguide 123 includes opposite input and output ends in the X-direction, and the input end of the modulation waveguide 123 at least partially overlaps with the input optical waveguide 121 in the Z-direction, and the output end of the modulation waveguide 123 at least partially overlaps with the output optical waveguide 122 in the Z-direction. The material of the modulation waveguide 123 includes a material having a linear electro-optic effect such as lead zirconate titanate (PZT), lithium Niobate (LN), potassium dihydrogen phosphate (KDP), ammonium Dihydrogen Phosphate (ADP), etc., and the modulation waveguide 123 may also be fabricated by a CMOS process directly on a substrate. In this manner, an optical signal may be coupled through input optical waveguide 121 into an input of modulation waveguide 123 and electro-optically modulated by a linear electro-optic effect, and then coupled through an output of modulation waveguide 123 into output optical waveguide 122 for transmission through output optical waveguide 122 to other devices in system-on-chip 100. It should be noted that, the electro-optical modulation achieved by using the linear electro-optical effect has a higher bandwidth and modulation rate than the electro-optical modulation achieved by using the carrier dispersion effect.
In some embodiments, the distance between the modulation waveguide 123 and the input optical waveguide 121, and the distance between the modulation waveguide 123 and the output optical waveguide 122 in the Z-direction may be adjusted to meet the coupling efficiency of the actual need. In addition, the portion of the input optical waveguide 121 overlapping the modulation waveguide 123 may be designed to be tapered (gradually narrowed in the optical signal transmission direction, e.g., the width of the waveguide in the Y direction gradually decreases from 200nm to 100nm or less), and the portion of the output optical waveguide 122 overlapping the modulation waveguide 123 may be designed to be tapered (gradually widened in the optical signal transmission direction, e.g., the width of the waveguide in the Y direction gradually increases from 100nm or less to 200 nm), thereby improving the coupling efficiency.
The first electrode structure 124 is located above the input optical waveguide 121 and the output optical waveguide 122, and the first electrode structure 124 is located on both sides of the modulation waveguide 123 in the Y direction. The first electrode structure 124 may generate an electric field acting on the modulation waveguide 123, such that the refractive index of the modulation waveguide 123 is changed to modulate the optical signal. The material of the first electrode structure 124 includes, but is not limited to, aluminum (Al), copper (Cu), molybdenum (Mo), gold (Au), tungsten (W), doped polysilicon, and the like.
On one hand, the bandwidth and the modulation rate of the electro-optic modulator can be greatly improved because the modulation waveguide is made of a material with a linear electro-optic effect; on the other hand, the modulation waveguide, the input optical waveguide and the output optical waveguide can be directly manufactured on the substrate, namely, the electro-optical modulator can be directly integrated in the system-on-chip, so that the integration level of the system-on-chip is improved.
In some embodiments, the electro-optic modulator 120 may be a mach-zehnder modulator, that is, the electro-optic modulator 120 may have two branches, each including an input optical waveguide 121, a modulation waveguide 123, and an output optical waveguide 122, and the modulation waveguide 123 on each branch is provided with a first electrode structure 124 on both sides.
In some embodiments, a Barrier Oxide (BOX) may also be formed above the substrate 110, and below the input optical waveguide 121 and the output optical waveguide 122.
In some embodiments, the system-on-chip 100 further includes a dielectric layer 180, the dielectric layer 180 covering the input optical waveguide 121, the output optical waveguide 122, the modulation waveguide 123, and the first electrode structure 124 to protect the various structures in the system-on-chip 100.
In some embodiments, the system-on-chip 100 further includes conductive interconnect structures 181, where the conductive interconnect structures 181 may be used to transmit electrical signals between various circuits, modules in the system-on-chip 100. The conductive interconnect structure 181 may be formed simultaneously with the first electrode structure 124 through the same process steps, and the materials of the conductive interconnect structure 181 and the first electrode structure 124 include, but are not limited to, conductive materials such as aluminum, copper, molybdenum, gold, tungsten, doped polysilicon, and the like. The conductive interconnect structure 181 may also be connected to the first electrode structure 124.
In some embodiments, the material of the modulating waveguide 123 comprises lead zirconate titanate.
In the embodiment of the present disclosure, the material of the modulating waveguide 123 may be lead zirconate titanate, which has a strong linear electro-optic effect, and the lead zirconate titanate thin film may be prepared through CMOS processes such as spin-coating film formation and annealing crystallization, so that the electro-optic modulator 120 having the lead zirconate titanate modulating waveguide 123 is easily integrated on a wafer (substrate 110).
In some embodiments, as shown in fig. 2a and 2b, the electro-optic modulator 120 further comprises:
an intermediate optical waveguide 125 positioned between the substrate 110 and the modulation waveguide 123; wherein a first end of the intermediate optical waveguide 125 is connected to the input optical waveguide 121, a second end of the intermediate optical waveguide 125 is connected to the output optical waveguide 122, and the first end and the second end are opposite in the first direction; the intermediate optical waveguide 125, the input optical waveguide 121, and the output optical waveguide 122 are the same material.
In the embodiment of the present disclosure, the input optical waveguide 121 and the output optical waveguide 122 may be continuous in the X direction, e.g., an intermediate optical waveguide 125 is connected between the input optical waveguide 121 and the output optical waveguide 122, and the material of the intermediate optical waveguide 125 is the same as that of the input optical waveguide 121 and the output optical waveguide 122. In this way, a portion of the optical signal may be coupled into the modulation waveguide 123 via the input optical waveguide 121 for modulation, while another portion of the optical signal is still transmitted along the input optical waveguide 121, the intermediate optical waveguide 125 and the output optical waveguide 122, and the modulated portion of the optical signal and the unmodulated portion of the optical signal are superimposed in the output optical waveguide 122. It will be appreciated that by adjusting the profile and dimensions of the modulating waveguide 123, intermediate optical waveguide 125, input optical waveguide 121 and output optical waveguide 122, the ratio of modulated and unmodulated optical signals can be flexibly adjusted to achieve a variety of different modulation effects. In some embodiments, the widths (Y-direction dimension) of the input optical waveguide 121, the intermediate optical waveguide 125, and the output optical waveguide 122 are each 200nm.
In some embodiments, where the input optical waveguide 121 and the output optical waveguide 122 are discontinuous, all of the optical signals are coupled into the modulation waveguide 123 for modulation and then coupled into the output optical waveguide 122 for output.
In some embodiments, as shown in fig. 2a and 2b, the material of the intermediate optical waveguide 125 comprises a material having a carrier dispersion effect; the electro-optic modulator 120 further includes:
a second electrode structure 126 located between the substrate 110 and the first electrode structure 124; wherein the second electrode structures 126 are located on opposite sides of the intermediate optical waveguide 125 along the second direction.
In embodiments of the present disclosure, the material of intermediate optical waveguide 125 may include materials having a carrier dispersion effect, such as silicon, germanium, silicon germanium, doped semiconductor materials, and the like. Preferably, the intermediate optical waveguide 125, the input optical waveguide 121, and the output optical waveguide 122 are all silicon waveguides. The second electrode structure 126 is located between the substrate 110 and the first electrode structure 124, and the second electrode structure 126 is located at both sides of the intermediate optical waveguide 125 in the Y direction. The second electrode structure 126 may generate an electric field acting on the intermediate optical waveguide 125, thereby modulating the optical signal in the intermediate optical waveguide 125 by the carrier dispersion effect. The material of the second electrode structure 126 includes, but is not limited to, aluminum, copper, molybdenum, gold, tungsten, doped polysilicon, and the like.
In this way, the modulation waveguide 123 and the first electrode structure 124 located above modulate part of the optical signal through the linear electro-optic effect, the intermediate optical waveguide 125 and the second electrode structure 126 located below modulate another part of the optical signal through the carrier dispersion effect, and the optical signals of the two modulated parts are overlapped in the output optical waveguide 122, so as to realize multiple different modulation effects (such as controlling the voltages on the first electrode structure 124 and the second electrode structure 126 respectively), so as to flexibly meet the actual requirements.
In some embodiments, the electro-optic modulator 120 may be a mach-zehnder modulator, that is, the electro-optic modulator 120 may have two branches, each including an input optical waveguide 121, a modulation waveguide 123, an intermediate optical waveguide 125, and an output optical waveguide 122, where the modulation waveguide 123 is provided with a first electrode structure 124 on both sides and the intermediate optical waveguide 125 is provided with a second electrode structure 126 on both sides.
In some embodiments, as shown in fig. 3, the system-on-chip 100 further comprises:
a main waveguide 130, wherein an input end of the main waveguide 130 is connected to the output optical waveguide 122;
a first photodetector 140 connected to the output end of the main waveguide 130; the first photodetector 140 is configured to convert an optical signal output by the main waveguide 130 into an electrical signal.
In some embodiments, as shown in fig. 3, the system-on-chip 100 further comprises:
an on-chip optical device 170, the on-chip optical device 170 being coupled between an input end and an output end of the main waveguide 130; wherein the on-chip optical device 170 includes at least one of a wavelength division multiplexer, a variable optical attenuator, and an optical amplifier.
In the embodiment of the present disclosure, the output optical waveguide 122 may also be connected to the main waveguide 130 along the transmission direction (such as the X direction) of the optical signal, so that the modulated optical signal is transmitted to other optical devices 170 on the chip in the system on chip 100 through the main waveguide 130. That is, one or more different on-chip optical devices 170 may also be coupled to the main waveguide 130 to implement various functions of the system-on-chip 100. Illustratively, the on-chip optical device 170 may include at least one of a wavelength division multiplexer (Wavelength Division Multiplexing, WDM), a variable optical attenuator (Variable Optical Attenuator, VOA), an optical amplifier (Optical Amplifier), and a spectroscopic detector (Test Access Point Photodetector, TAP PD), among others. For example, a combination of multiple ones of the variable optical attenuator, wavelength division Multiplexer, spectral detector, optical amplifier may constitute a reconfigurable optical add-Drop Multiplexer (ROADM), an optically tunable wavelength division Multiplexer (VMUX), or the like.
The first photodetector 140 may be connected to an output end of the main waveguide 130, thereby converting an optical signal output from the main waveguide 130 into an electrical signal. That is, the first photodetector 140 is located at the end of the optical path of the system-on-chip 100 and is used to convert the final optical signal processed by the system-on-chip 100 into an electrical signal to output the electrical signal to other circuits or systems.
In some embodiments, as shown in fig. 3, the system-on-chip 100 further comprises:
a branch waveguide 150, an input end of the branch waveguide 150 being coupled to the main waveguide 130;
a second photodetector 160 connected to the output end of the branch waveguide 130; wherein the second photodetector 160 is configured to monitor the intensity and/or frequency of the optical signal transmitted in the main waveguide 130.
In the disclosed embodiment, the input end of the branch waveguide 150 may be coupled with the main waveguide 130 at any one node of the main waveguide 130. Illustratively, the input end of the branch waveguide 150 may be coupled to the main waveguide 130 between the electro-optic modulator 120 and the on-chip optical device 170, and the input end of the branch waveguide 150 may also be coupled to the main waveguide 130 between any two on-chip optical devices 170.
The second photodetector 160 may monitor parameters such as the intensity, frequency, phase, etc. of the optical signal at any one node on the main waveguide 130 through the branch waveguide 150. Thus, by means of positive feedback or negative feedback, the working parameters of the optical devices before or after the node can be adjusted according to the intensity, frequency, phase and other parameters of the optical signal at any node monitored by the second photodetector 160, so as to improve the optical signal transmission quality of the system on chip 100.
As shown in fig. 4, an embodiment of the present disclosure provides a manufacturing method of a system on chip, the manufacturing method including the steps of:
s10, providing a substrate;
s20, forming an input optical waveguide and an output optical waveguide which are arranged in parallel along a first direction above the substrate; wherein the first direction is parallel to a plane in which the substrate is located;
s30, forming a modulation waveguide above the input optical waveguide and the output optical waveguide; the input end of the modulation waveguide and the projection of the input optical waveguide on the substrate are at least partially overlapped, the output end of the modulation waveguide and the projection of the output optical waveguide on the substrate are at least partially overlapped, and the input end of the modulation waveguide and the output end of the modulation waveguide are opposite along the first direction; the material of the modulation waveguide comprises a material with a linear electro-optic effect;
s40, forming a first electrode structure on two opposite sides of the modulation waveguide along the second direction; the second direction is parallel to a plane where the substrate is located, and the second direction intersects the first direction.
It should be understood that the steps shown in fig. 4 are not exclusive and that other steps may be performed before, after, or between any of the steps in the illustrated operations. The steps shown in fig. 4 can be sequentially adjusted according to actual requirements.
In embodiments of the present disclosure, referring to fig. 2a and 2b, a substrate 110 is provided, and the material of the substrate 110 may include elemental semiconductor materials, such as silicon, germanium, etc., compound semiconductor materials, such as gallium nitride, gallium arsenide, or indium phosphide, etc., and composite semiconductor materials, such as silicon germanium, silicon on insulator, germanium on insulator, etc. The substrate 110 may also be doped or include doped and undoped regions in the substrate. In particular, the substrate 110 may also be a substrate of a silicon photo chip to be compatible with CMOS technology and optoelectronic devices.
A waveguide material layer may then be formed over the substrate 110 using a deposition process, and portions of the waveguide material layer may be removed using photolithography and etching processes, etc., to form the input optical waveguide 121 and the output optical waveguide 122 disposed side-by-side in the X-direction. The input optical waveguide 121 and the output optical waveguide 122 are located in the same plane above the substrate 110, and the input optical waveguide 121 and the output optical waveguide 122 may extend in the X direction, e.g., the input optical waveguide 121 and the output optical waveguide 122 may be located on the same straight line parallel to the X direction.
A modulation waveguide material layer is formed over the input optical waveguide 121 and the output optical waveguide 122 by using a process of deposition, spin coating, annealing crystallization, etc., and a part of the modulation waveguide material layer is removed by using a process of photolithography, etching, etc., thereby forming a modulation waveguide 123, where the material of the modulation waveguide 123 includes a material having a linear electro-optic effect, such as lead zirconate titanate, lithium niobate, potassium dihydrogen phosphate, ammonium dihydrogen phosphate, etc.
In addition, the dielectric layer 180 filled between the input optical waveguide 121, the output optical waveguide 122, and the modulation waveguide 123 may be formed using a deposition process or the like. The material of dielectric layer 180 includes, but is not limited to, silicon oxide, polymer, and the like. Then, by using photolithography, etching, and other processes, a portion of the dielectric layer 180 is removed, so as to form grooves and contact holes corresponding to the first electrode structure 124 and the conductive interconnect structure 181 (e.g., a metal interconnect structure). The grooves and the contact holes are filled with a conductive material by a deposition process or the like to form the first electrode structures 124 located at both sides of the modulation waveguide 123 in the Y direction, and the conductive interconnection structures 181. The conductive interconnect structure 181 may be used to transfer electrical signals between various circuits, modules in the system-on-chip 100. And the input optical waveguide 121, the output optical waveguide 122, the modulation waveguide 123 and the first electrode structure 124 constitute the electro-optical modulator 120.
Thus, on the one hand, since the modulating waveguide 123 is made of a material having a linear electro-optic effect, the bandwidth and the modulation rate of the electro-optic modulator 120 can be greatly improved; on the other hand, the modulation waveguide 123, the input optical waveguide 121, and the output optical waveguide 122 may be directly fabricated on the substrate 110, i.e., the electro-optical modulator 120 may be directly integrated in the system-on-chip 100, thereby improving the integration level of the system-on-chip 100.
In some embodiments, a Barrier Oxide (BOX) may also be formed between the substrate 110 and the waveguide material layer.
In some embodiments, referring to fig. 2a and 2b, the manufacturing method further comprises:
forming an intermediate optical waveguide 125 over the substrate 110 prior to forming the modulated waveguide 123; wherein a first end of the intermediate optical waveguide 125 is connected to the input optical waveguide 121, a second end of the intermediate optical waveguide 125 is connected to the output optical waveguide 122, and the first end and the second end are opposite in the first direction; the intermediate optical waveguide 125, the input optical waveguide 121, and the output optical waveguide 122 are the same material;
forming a second electrode structure 126 over the substrate 110 prior to forming the first electrode structure 124; wherein the second electrode structures 126 are located on opposite sides of the intermediate optical waveguide 125 along the second direction.
In the embodiment of the present disclosure, before forming the modulation waveguide material layer, a part of the waveguide material layer may be removed using photolithography and etching or the like to simultaneously form the input optical waveguide 121, the intermediate optical waveguide 125, and the output optical waveguide 122, i.e., the input optical waveguide 121, the intermediate optical waveguide 125, and the output optical waveguide 122 may be a continuous one-piece body.
After forming the dielectric layer 180, a portion of the dielectric layer 180 may be removed by using a photolithography, etching, or other process to form grooves and contact holes corresponding to the first electrode structure 124, the second electrode structure 126, and the conductive interconnect structure 181. The grooves and the contact holes are filled with conductive material by deposition, etc., to sequentially form a second electrode structure 126 over the substrate 110, and a first electrode structure 124 over the second electrode structure 126. In some embodiments, the first electrode structure 124 and the second electrode structure 126 may also be formed simultaneously by one deposition.
In this way, the modulation waveguide 123 and the first electrode structure 124 located above modulate part of the optical signal through the linear electro-optic effect, the intermediate optical waveguide 125 and the second electrode structure 126 located below modulate another part of the optical signal through the carrier dispersion effect, and the optical signals of the two modulated parts are overlapped in the output optical waveguide 122, so as to realize multiple different modulation effects (such as controlling the voltages on the first electrode structure 124 and the second electrode structure 126 respectively), so as to flexibly meet the actual requirements.
In some embodiments, referring to fig. 3, the method of manufacturing further comprises:
forming a main waveguide 130; wherein an input end of the main waveguide 130 is connected to the output optical waveguide 122;
forming a branch waveguide 150; wherein an input end of the branch waveguide 150 is coupled to the main waveguide 130;
forming a first photodetector 140 connected to the output end of the main waveguide 130; the first photodetector 140 is configured to convert an optical signal output by the main waveguide into an electrical signal;
forming a second photodetector 160 connected to the output of the branch waveguide 150; wherein the second photodetector 160 is configured to monitor the intensity and/or frequency of the optical signal transmitted in the main waveguide 130.
In the embodiment of the present disclosure, after forming the waveguide material layer on the substrate 110, a portion of the waveguide material layer may be removed using photolithography, etching, etc. processes to simultaneously pattern the input optical waveguide 121, the intermediate optical waveguide 125, the output optical waveguide 122, the main waveguide 130, and the branch waveguide 150. That is, the materials of the input optical waveguide 121, the intermediate optical waveguide 125, the output optical waveguide 122, the main waveguide 130, and the branch waveguide 150 may be the same, and the input optical waveguide 121, the intermediate optical waveguide 125, the output optical waveguide 122, the main waveguide 130, and the branch waveguide 150 are located in the same plane parallel to the surface of the substrate 110 and are simultaneously formed through the same process steps. Preferably, the input optical waveguide 121, the intermediate optical waveguide 125, the output optical waveguide 122, the main waveguide 130, and the branch waveguide 150 are all silicon waveguides.
After forming the input optical waveguide 121, the intermediate optical waveguide 125, the output optical waveguide 122, the main waveguide 130, and the branch waveguide 150, a germanium material layer 190 may be formed over the input optical waveguide 121, the intermediate optical waveguide 125, the output optical waveguide 122, the main waveguide 130, and the branch waveguide 150 using deposition, epitaxial growth, or the like. A portion of the germanium material layer 190 is then removed using photolithography and etching, etc., and a portion of the germanium material layer 190 is left over the output end of the main waveguide 130 and a portion of the germanium material layer 190 is left over the output end of the branch waveguide 150 to form the first photodetector 140 and the second photodetector 160.
The first photodetector 140 may be connected to the output end of the main waveguide 130, so as to convert the optical signal output by the main waveguide 130 into an electrical signal. That is, the first photodetector 140 is located at the end of the optical path of the system-on-chip 100 and is used to convert the final optical signal processed by the system-on-chip 100 into an electrical signal to output the electrical signal to other circuits or systems.
The second photodetector 160 may monitor parameters such as the intensity, frequency, phase, etc. of the optical signal at any one node on the main waveguide 130 through the branch waveguide 150. Thus, by means of positive feedback or negative feedback, the working parameters of the optical devices before or after the node can be adjusted according to the intensity, frequency, phase and other parameters of the optical signal at any node monitored by the second photodetector 160, so as to improve the optical signal transmission quality of the system on chip 100.
In some embodiments, the silicon photofabrication process includes a front-end process including processing, doping, and growth of germanium material layers of the input optical waveguide, the intermediate optical waveguide, the output optical waveguide, the main and branch waveguides, and a back-end process that is primarily deposition to form the metal interconnect structure. The former process has small characteristic size and sensitive process, and in order to avoid influencing the former process when forming the lead zirconate titanate modulating waveguide, the lead zirconate titanate modulating waveguide can be integrated in the latter process.
Specifically, fig. 5 is a flow chart of steps of a silicon photofabrication process for forming a system-on-chip with lead zirconate-titanate modulator provided by the present disclosure. The method comprises the steps of firstly, patterning and etching silicon waveguides (including an input optical waveguide, a middle optical waveguide, an output optical waveguide, a main waveguide, a branch waveguide and the like) on a silicon optical wafer, and then doping the silicon waveguides; a second step of epitaxially growing a germanium material layer on the silicon waveguide, doping and etching the germanium material layer to form a first photoelectric detector and a second photoelectric detector; if a silicon nitride layer or a silicon nitride waveguide needs to be formed in the previous process, the third step is to finish the deposition and etching of the silicon nitride; a fourth step of forming a silicon oxide layer (namely the dielectric layer or a part of the dielectric layer), and performing chemical mechanical planarization to obtain a flat surface; spin-coating a lead zirconate titanate layer on a wafer, annealing and crystallizing the lead zirconate titanate layer, photoetching and etching the lead zirconate titanate layer to form a modulation waveguide; if the silicon nitride waveguide is formed in the subsequent process, lead zirconate titanate modulation waveguide can be formed first, and then a silicon nitride layer or a silicon nitride waveguide can be formed; or firstly forming a silicon nitride layer or a silicon nitride waveguide, and then forming a lead zirconate titanate modulation waveguide; and a sixth step of deposition to form a metal interconnection structure and an electrode structure. It will be appreciated that the former process may include the first to fourth steps described above, and the latter process may include the fifth and sixth steps. It will be appreciated that the process of forming the lead zirconate titanate modulated waveguide is compatible with existing CMOS processes, and thus the electro-optic modulator may be integrated with devices such as photodetectors, wavelength division multiplexers, variable optical attenuators, etc. in a system-on-chip via a CMOS fabrication process.
It should be noted that, features disclosed in several method or apparatus embodiments provided in the present disclosure may be arbitrarily combined without any conflict to obtain new method embodiments or apparatus embodiments.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A system-on-chip, the system-on-chip comprising a substrate and an electro-optic modulator, the electro-optic modulator comprising:
an input optical waveguide located over the substrate;
an output optical waveguide located above the substrate and juxtaposed with the input optical waveguide along a first direction; wherein the first direction is parallel to a plane in which the substrate is located;
a modulation waveguide located above the input optical waveguide and the output optical waveguide; the input end of the modulation waveguide and the projection of the input optical waveguide on the substrate are at least partially overlapped, the output end of the modulation waveguide and the projection of the output optical waveguide on the substrate are at least partially overlapped, and the input end of the modulation waveguide and the output end of the modulation waveguide are opposite along the first direction; the material of the modulation waveguide comprises a material with a linear electro-optic effect;
the first electrode structures are positioned at two opposite sides of the modulation waveguide along the second direction; the second direction is parallel to a plane where the substrate is located, and the second direction intersects the first direction.
2. The system on a chip of claim 1, wherein the electro-optic modulator further comprises:
an intermediate optical waveguide between the substrate and the modulation waveguide; wherein a first end of the intermediate optical waveguide is connected to the input optical waveguide, a second end of the intermediate optical waveguide is connected to the output optical waveguide, and the first end and the second end are opposite in the first direction; the intermediate optical waveguide, the input optical waveguide and the output optical waveguide are of the same material.
3. The system on a chip of claim 2, wherein the material of the intermediate optical waveguide comprises a material having a carrier dispersion effect; the electro-optic modulator further comprises:
a second electrode structure located between the substrate and the first electrode structure; wherein the second electrode structure is located at two opposite sides of the intermediate optical waveguide along the second direction.
4. The system on a chip of claim 1, wherein the system on a chip further comprises:
the input end of the main path waveguide is connected with the output optical waveguide;
the first photoelectric detector is connected with the output end of the main path waveguide; the first photoelectric detector is used for converting the optical signal output by the main waveguide into an electric signal.
5. The system on a chip of claim 4, wherein the system on a chip further comprises:
the input end of the branch waveguide is coupled with the main waveguide;
the second photoelectric detector is connected with the output end of the branch waveguide; the second photoelectric detector is used for monitoring the intensity and/or frequency of the optical signal transmitted in the main waveguide.
6. The system on a chip of claim 4, wherein the system on a chip further comprises:
an on-chip optical device coupled between the input and output ends of the main waveguide; wherein the on-chip optical device includes at least one of a wavelength division multiplexer, a variable optical attenuator, and an optical amplifier.
7. The system on a chip of claim 1, wherein the material of the modulating waveguide comprises lead zirconate titanate.
8. A method of manufacturing a system-on-chip, comprising:
providing a substrate;
forming an input optical waveguide and an output optical waveguide arranged in parallel along a first direction over the substrate; wherein the first direction is parallel to a plane in which the substrate is located;
forming a modulation waveguide over the input optical waveguide and the output optical waveguide; the input end of the modulation waveguide and the projection of the input optical waveguide on the substrate are at least partially overlapped, the output end of the modulation waveguide and the projection of the output optical waveguide on the substrate are at least partially overlapped, and the input end of the modulation waveguide and the output end of the modulation waveguide are opposite along the first direction; the material of the modulation waveguide comprises a material with a linear electro-optic effect;
forming a first electrode structure on two opposite sides of the modulation waveguide along a second direction; the second direction is parallel to a plane where the substrate is located, and the second direction intersects the first direction.
9. The manufacturing method according to claim 8, characterized in that the manufacturing method further comprises:
forming an intermediate optical waveguide over the substrate prior to forming the modulated waveguide; wherein a first end of the intermediate optical waveguide is connected to the input optical waveguide, a second end of the intermediate optical waveguide is connected to the output optical waveguide, and the first end and the second end are opposite in the first direction; the intermediate optical waveguide, the input optical waveguide and the output optical waveguide are made of the same material;
forming a second electrode structure over the substrate prior to forming the first electrode structure; wherein the second electrode structure is located at two opposite sides of the intermediate optical waveguide along the second direction.
10. The manufacturing method according to claim 8, characterized in that the manufacturing method further comprises:
forming a main waveguide; the input end of the main path waveguide is connected with the output optical waveguide;
forming a branch waveguide; the input end of the branch waveguide is coupled with the main waveguide;
forming a first photoelectric detector connected with the output end of the main path waveguide; the first photoelectric detector is used for converting the optical signal output by the main waveguide into an electric signal;
forming a second photodetector connected to the output end of the branch waveguide; the second photoelectric detector is used for monitoring the intensity and/or frequency of the optical signal transmitted in the main waveguide.
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