CN117735572A - Preparation process of ultra-clean high-purity KOH - Google Patents
Preparation process of ultra-clean high-purity KOH Download PDFInfo
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- CN117735572A CN117735572A CN202311359082.4A CN202311359082A CN117735572A CN 117735572 A CN117735572 A CN 117735572A CN 202311359082 A CN202311359082 A CN 202311359082A CN 117735572 A CN117735572 A CN 117735572A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 195
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims abstract description 68
- 239000000243 solution Substances 0.000 claims abstract description 56
- 239000011347 resin Substances 0.000 claims abstract description 51
- 229920005989 resin Polymers 0.000 claims abstract description 51
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 35
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 35
- 239000001103 potassium chloride Substances 0.000 claims abstract description 34
- 235000011164 potassium chloride Nutrition 0.000 claims abstract description 34
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 238000001914 filtration Methods 0.000 claims abstract description 18
- 239000011259 mixed solution Substances 0.000 claims abstract description 14
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000003729 cation exchange resin Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000007864 aqueous solution Substances 0.000 claims abstract description 11
- 229910001414 potassium ion Inorganic materials 0.000 claims abstract description 11
- 239000007787 solid Substances 0.000 claims abstract description 11
- 230000009615 deamination Effects 0.000 claims abstract description 10
- 238000006481 deamination reaction Methods 0.000 claims abstract description 10
- 238000005406 washing Methods 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 239000002002 slurry Substances 0.000 claims abstract description 7
- 239000000706 filtrate Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000007670 refining Methods 0.000 claims abstract description 4
- 238000001179 sorption measurement Methods 0.000 claims abstract description 4
- 150000001768 cations Chemical class 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 238000002425 crystallisation Methods 0.000 claims description 15
- 230000008025 crystallization Effects 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 8
- 239000004925 Acrylic resin Substances 0.000 claims description 6
- 229920000178 Acrylic resin Polymers 0.000 claims description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- WBYWAXJHAXSJNI-UHFFFAOYSA-N cinnamic acid Chemical compound OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 claims description 3
- 239000003480 eluent Substances 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 238000004064 recycling Methods 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000460 chlorine Substances 0.000 abstract description 2
- 229910052801 chlorine Inorganic materials 0.000 abstract description 2
- 238000005868 electrolysis reaction Methods 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 235000011118 potassium hydroxide Nutrition 0.000 description 64
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000003918 potentiometric titration Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
The invention provides a preparation process of ultra-clean high-purity KOH, which comprises the following steps: step one, filtering a potassium chloride aqueous solution to remove solid impurities in the solution; step two, potassium chloride filtrate is subjected to adsorption of potassium ions through the H-type cation exchange resin subjected to refining treatment at a constant flow rate, and then the potassium chloride filtrate is eluted through high-purity ammonia water with a certain concentration to obtain KOH and ammonia water mixed solution; step three, the mixed solution passes through a deamination tower to obtain a KOH solution with low concentration; and fourthly, heating, concentrating and crystallizing to obtain KOH crystal slurry, and centrifugally washing and filtering to obtain ultra-clean high-purity KOH. The preparation process of KOH obtained by the invention can lead Na to be + Compared with the traditional electrolysis, the process does not generate hydrogen and chlorine, and reduces the potential safety hazard, wherein the content of other metal cations is less than 10ppm and less than 20ppb. In addition, resin and ammonia water can be recycled in the process, so that the process is safe and environment-friendly.
Description
Technical Field
The invention relates to a preparation process of KOH, in particular to a preparation process of electronic-grade KOH.
Background
High purity electronic grade potassium hydroxide generally refers to potassium hydroxide that is of higher purity and higher quality for use in the electronics industry. In the fabrication of integrated circuits, very large scale integrated circuits (VLSI), and the like, high purity electronic grade potassium hydroxide is one of the key auxiliary materials, and is mainly used for processes such as wafer surface cleaning, cleaning and etching during chip processing, and the like. In the solar photovoltaic industry, electronic grade potassium hydroxide is used in the fields of silicon wafer surface cleaning, etching agents and the like. In the display panel industry, electronic grade potassium hydroxide is used for glass substrate cleaning, silicon nitride, silicon dioxide etchants, and the like.
At present, the traditional potassium hydroxide preparation method is obtained by electrolyzing potassium chloride, hydrogen and chlorine are generated in the production process, a certain safety risk is provided, and the energy consumption of the production process is high.
Disclosure of Invention
The invention aims to provide a preparation process of ultra-clean high-purity KOH.
Compared with the traditional method for preparing potassium hydroxide by electrolysis, the resin used in the process can be recycled, the concentration is low, the crystallization temperature is near room temperature, the energy consumption is lower, and the process mass production is facilitated.
Specifically, the invention provides a preparation process of ultra-clean high-purity KOH, which comprises the following steps:
step one, filtering a potassium chloride aqueous solution to remove solid impurities in the solution;
step two, potassium chloride filtrate is subjected to adsorption of potassium ions through the H-type cation exchange resin subjected to refining treatment at a constant flow rate, and then the potassium chloride filtrate is eluted through high-purity ammonia water with a certain concentration to obtain KOH and ammonia water mixed solution;
step three, the mixed solution passes through a deamination tower to obtain a KOH solution with low concentration;
and fourthly, concentrating under reduced pressure, cooling, crystallizing to obtain KOH crystal slurry, and centrifugally washing and filtering to obtain ultra-clean high-purity KOH.
The above provides a process for preparing ultra-clean high-purity KOH, wherein in the first step, preferably, the concentration of the potassium chloride solution is 1-3 mol/L.
More preferably, the concentration of the potassium chloride solution is 1-3 mol/L.
In the first step, preferably, one of a PP, PES or PTFE cartridge having a diameter of 0.5 to 1 μm is used for the rough filtration.
More preferably, a PP cartridge of 1 μm is used.
Preferably, the selected resin is one or more of sulfonic styrene resin, carboxyl styrene resin, sulfonic acrylic resin and carboxylic acrylic resin. Before the resin is used, the resin is soaked in 5-10% electronic grade HCl for 1-2h. The resin obtained by the method is H-type gel resin, the volume exchange capacity is more than 5mol/L, and the working exchange capacity is more than 2mol/L. The electronic grade HCl is further refined to improve the transformation rate of the resin, and the resin is cleaned for standby by using pure water after refining treatment.
In the second step, preferably, the flow rate of the KCl solution passing through the resin is 1-2Bv/h.
In the second step, preferably, the KCl solution is passed through the resin in a volume 1 to 3 times that of the filler resin.
In the second step, the concentration of the high-purity ammonia water used for eluting the resin is preferably 1 to 3mol/L.
More preferably, the concentration of the ammonia water is 1-3 mol/L, the flow rate of the ammonia water passing through the resin is 1-2Bv/h, and the volume of the solution of the ammonia water passing through the resin is 2-6 times that of the filling resin.
More preferably, the volume of the aqueous ammonia solution passing through the resin is 1.5 to 3 times that of the filling resin.
In the third step, preferably, the eluent is placed in a deamination tower to completely remove ammonia water.
In the fourth step, the concentration of KOH crystals is preferably 50% to 70%.
More preferably, the concentration of KOH crystals is 55% to 60%.
In the fourth step, preferably, the temperature at which the seed crystal is added during crystallization of KOH is 25 to 35 ℃.
More preferably, the seeding temperature is 25 to 30 ℃.
In the fourth step, the crystallization temperature of KOH is preferably 20 to 35 ℃.
More preferably, the crystallization temperature is 25 to 30 ℃.
In the fourth step, the stirring speed at the time of KOH crystallization is preferably 10 to 100r/min.
More preferably, the stirring speed is 30 to 60r/min.
In the fourth step, preferably, the KOH crystallization time is 2 to 8 hours.
More preferably, the crystallization time is 4 to 6 hours.
The above provides a process for preparing ultra-clean high-purity KOH, wherein in the fourth step, preferably, the crystalline crystals are washed by centrifugal spray.
In the fourth step, preferably, 45-48% of high-purity KOH liquid is prepared after washing the crystals.
In the fourth step, preferably, 45-48% of the high-purity KOH liquid is subjected to fine filtration by using one of a PP, PES or PTFE filter element with a diameter of 0.1-0.3 μm to remove particles.
More preferably, the filter is applied to remove particles using a PES cartridge of 0.1 μm.
Compared with the prior art, the invention has the advantages that:
(1) The potassium chloride solution is converted into the potassium hydroxide solution by resin adsorption and elution, and the production process is green and safe.
(2) The resin can be repeatedly regenerated and used, the used high-purity hydrochloric acid can be used for producing high-purity ammonium chloride as a byproduct, and the ammonia water recovered by deamination can be recycled.
(3) In the potassium hydroxide crystallization process, the concentration is not high, the crystallization temperature is close to room temperature, and the energy consumption is low.
(4) The crystal morphology of KOH can be controlled by adding seed crystal to induce crystallization and stirring dynamic crystallization, and the ultra-clean high-purity KOH with more stable quality and lower impurity is obtained.
Detailed Description
The technical scheme of the invention is further illustrated by the following examples.
Example 1
A preparation process of ultra-clean high-purity KOH comprises the following steps:
(1) Preparing food-grade potassium chloride solid into 2mol/l potassium chloride aqueous solution, and filtering the aqueous solution through a pp filter element with the diameter of 1 mu m to remove solid impurities in the solution;
(2) The cation exchange resin of the sulfonic styrene resin is soaked in 5% electronic grade hydrochloric acid for 2 hours (the volume exchange capacity of the obtained H-type gel resin is about 6.5mol/L, the working exchange capacity is about 4.5 mol/L) so as to be completely converted into the H-type cation exchange resin, and a large amount of pure water is filled into a resin tower after being washed. The prepared 1mol/L potassium chloride solution flows into the resin tower from the top at a flow rate of 0.5Bv/h to adsorb potassium ions, after flowing into 10L KCl solution, the prepared 1mol/L ammonia water flows into the resin tower from the top at a flow rate of 2Bv/h to elute potassium ions, and after flowing into 15L ammonia water, the KOH and ammonia water mixed solution is obtained by eluting;
(3) The mixed solution is passed through a deamination tower to completely remove ammonia water, so as to obtain KOH solution;
(4) Heating and concentrating the KOH solution to 58%, placing the KOH solution in a crystallizer, cooling circulating water to 31 ℃, adding seed crystals when the temperature of the solution is reduced, stirring at a low speed of 50r/min, continuously cooling to 26 ℃, preserving heat and crystallizing for 6 hours to obtain KOH crystal slurry, centrifugally spraying and washing, dissolving the washed crystals into a 48% KOH solution, and filtering through a PES filter element of 0.1 mu m to obtain the ultra-clean high-purity KOH solution.
Example 2
A preparation process of ultra-clean high-purity KOH comprises the following steps:
(1) Preparing food-grade potassium chloride solid into 1mol/l potassium chloride aqueous solution, and filtering the aqueous solution through a pp filter element with the thickness of 1 mu m to remove solid impurities in the solution;
(2) The carboxyl styrene resin cation exchange resin is soaked in 5% electronic grade hydrochloric acid for 2H (the volume exchange capacity of the obtained H-type gel resin is about 5.5mol/L, the working exchange capacity is about 3 mol/L) so as to be completely converted into the H-type cation exchange resin, and a large amount of pure water is filled into a resin tower after being washed. The prepared 1mol/L potassium chloride solution flows into the resin tower from the top at a flow rate of 1Bv/h to adsorb potassium ions, after flowing into 20L KCl solution, the prepared 1mol/L ammonia water flows into the resin tower from the top at a flow rate of 1Bv/h to elute potassium ions, and after flowing into 25L ammonia water, KOH and ammonia water mixed solution is obtained by eluting;
(3) The mixed solution is passed through a deamination tower to completely remove ammonia water, so as to obtain KOH solution;
(4) Heating and concentrating the KOH solution to 55%, placing the KOH solution in a crystallizer, cooling circulating water to 28 ℃, adding seed crystals when the temperature of the solution is reduced, stirring at a low speed of 50r/min, continuously cooling to 24 ℃, preserving heat and crystallizing for 6 hours to obtain KOH crystal slurry, centrifugally spraying and washing, dissolving the washed crystals into a 48% KOH solution, and filtering through a PES filter element of 0.1 mu m to obtain the ultra-clean high-purity KOH solution.
Example 3
A preparation process of ultra-clean high-purity KOH comprises the following steps:
(1) Preparing food-grade potassium chloride solid into 1.5mol/l potassium chloride aqueous solution, and filtering the aqueous solution through a pp filter element with the thickness of 1 mu m to remove solid impurities in the solution;
(2) The sulfonic acid group acrylic resin cation exchange resin is soaked by 5% electronic grade hydrochloric acid for 2 hours (the volume exchange capacity of the obtained H-type gel resin is about 6mol/L, the working exchange capacity is about 4 mol/L) so as to be completely converted into the H-type cation exchange resin, and 10L of resin is filled into a resin tower after a large amount of pure water is washed. The method comprises the steps of (1) flowing 1.5mol/L potassium chloride solution into a resin tower from the top at a flow rate of 1Bv/h to adsorb potassium ions, flowing 1.5mol/L ammonia water into the resin tower from the top at a flow rate of 1Bv/h to elute potassium ions after flowing 15L KCl solution, and eluting after flowing 20L ammonia water to obtain KOH and ammonia water mixed solution;
(3) The mixed solution is passed through a deamination tower to completely remove ammonia water, so as to obtain KOH solution;
(4) Heating and concentrating the KOH solution to 56.5%, placing the KOH solution in a crystallizer, cooling circulating water to 30 ℃, adding seed crystals when the temperature of the solution is reduced, stirring at a low speed of 30r/min, continuously cooling to 25 ℃, preserving heat and crystallizing for 6 hours to obtain KOH crystal slurry, centrifugally spraying and washing, dissolving the cleaned crystal into 48% KOH solution, and filtering through a PES filter element of 0.1 mu m to obtain the ultra-clean high-purity KOH solution.
Example 4
A preparation process of ultra-clean high-purity KOH comprises the following steps:
(1) Preparing food-grade potassium chloride solid into 2.5mol/l potassium chloride aqueous solution, and filtering the aqueous solution through a pp filter element with the thickness of 1 mu m to remove solid impurities in the solution;
(2) The carboxylic acid-based acrylic resin cation exchange resin is soaked in 5% electronic grade hydrochloric acid for 2 hours (the volume exchange capacity of the obtained H-type gel resin is about 5.5mol/L, the working exchange capacity is about 2.5 mol/L) so as to be completely converted into H-type cation exchange resin, and a large amount of pure water is filled into a resin tower after being washed. The prepared 2.5mol/L potassium chloride solution flows into the top of the resin tower at a flow rate of 1Bv/h to adsorb potassium ions, after flowing into 8L KCl solution, the prepared 2.5mol/L ammonia water flows into the top of the resin tower at a flow rate of 1Bv/h to elute potassium ions, and after flowing into 10L ammonia water, the KOH and ammonia water mixed solution is obtained;
(3) The mixed solution is passed through a deamination tower to completely remove ammonia water, so as to obtain KOH solution;
(4) Heating and concentrating the KOH solution to 60%, placing the KOH solution in a crystallizer, cooling circulating water to the temperature of 32 ℃, adding seed crystals when the temperature of the solution is reduced, stirring at a low speed of 30r/min, continuously cooling to 26 ℃, preserving heat and crystallizing for 4 hours to obtain KOH crystal slurry, centrifugally spraying and washing, dissolving the washed crystals into a 48% KOH solution, and filtering through a PES filter element of 0.1 mu m to obtain the ultra-clean high-purity KOH solution.
Detecting the purity of the high-purity KOH solution, and detecting the KOH and K 2 CO 3 The content of (2) was detected by potentiometric titration and the metal ions by ICP-MS.
Table one: the prepared ultra-clean high-purity KOH concentration and ion content
The above-described embodiments are only preferred embodiments of the present invention, and are not intended to limit the present invention in any way, and other variations and modifications may be made without departing from the technical aspects described in the claims and specification.
Claims (10)
1. The preparation process of the ultra-clean high-purity KOH is characterized by comprising the following steps of:
step one, filtering a potassium chloride aqueous solution to remove solid impurities in the solution;
step two, potassium chloride filtrate is subjected to adsorption of potassium ions through the H-type cation exchange resin subjected to refining treatment at a constant flow rate, and then the potassium chloride filtrate is eluted through high-purity ammonia water with a certain concentration to obtain KOH and ammonia water mixed solution;
step three, the mixed solution passes through a deamination tower to obtain a KOH solution with low concentration;
and fourthly, heating, concentrating, cooling and crystallizing to obtain KOH crystal slurry, and centrifugally washing and filtering to obtain the ultra-clean high-purity KOH.
2. The preparation process according to claim 1, wherein in the first step, the concentration of the potassium chloride solution is 1-3 mol/L.
3. The process according to claim 1, wherein in the first step, one of PP, PES or PTFE cartridges of 0.5-1 μm is used for the coarse filtration.
4. The preparation process according to claim 1, wherein in the second step, the H-type cation exchange resin is one or more of sulfonic styrene resin, carboxyl styrene resin, sulfonic acrylic resin and carboxylic acrylic resin; before the resin is used, 5-10% electronic grade HCl is adopted for soaking for 1-2 hours.
5. The preparation process according to claim 1, wherein in the second step, the flow rate of the KCl solution passing through the resin is 1-2Bv/h, and the volume of the KCl solution passing through the resin is 1-3 times that of the filling resin.
6. The preparation process according to claim 1, wherein in the second step, the concentration of ammonia water used for eluting the resin is 1-3 mol/L, the flow rate of the ammonia water passing through the resin is 1-2Bv/h, and the volume of the solution of the ammonia water passing through the resin is 2-6 times that of the filling resin.
7. The preparation process according to claim 1, wherein in the third step, the eluent is placed in a deamination tower to remove ammonia water, and the ammonia water can be placed in the second step for recycling to obtain a low-concentration KOH solution.
8. The preparation process according to claim 1, wherein in the fourth step, the concentration of the concentrated KOH is 55% -70%, the temperature of adding the seed crystal during the crystallization of KOH is 25% -35 ℃, the crystallization temperature of KOH is 20% -35 ℃, the stirring speed during the crystallization of KOH is 10-100 r/min, and the crystallization time of KOH is 2-8 h.
9. The preparation process according to claim 1, wherein in the fourth step, the crystal is dissolved to obtain 45% -48% KOH solution after centrifugal spray washing, and the filtration is performed using one of PP, PES or PTFE filter elements of 0.1-0.3 μm.
10. The ultra-clean high-purity KOH solution obtained by the method according to claim 1-9, wherein the concentration is 45% -48%, na + < 10ppm, other metal cations < 20ppb.
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