CN117728281A - Laser induced charging control device, method and charged particle beam detection system - Google Patents
Laser induced charging control device, method and charged particle beam detection system Download PDFInfo
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Abstract
The application discloses a laser induced charging control device, a method and a charged particle beam detection system. The laser-induced charge control device includes: the laser emission unit comprises at least two groups of laser emission components and is used for generating laser beams with different wave bands, wherein each group of laser emission components comprises a laser emitter and an off-axis parabolic mirror, and the laser beams emitted by the laser emitter are collimated and reflected by the off-axis parabolic mirror; the laser coupling unit is used for receiving the laser beams reflected by the off-axis parabolic mirrors in each group of laser emission components and coupling the laser beams to the same light path; and the laser regulation and control unit is used for receiving the coupled laser beam on the optical path, and sequentially deflecting, shaping and focusing reflecting the coupled laser beam to irradiate the surface of the semiconductor to be tested. By the scheme of the embodiment of the application, the multi-wavelength coupled laser light source can be realized so as to adapt to more wafer detection scenes.
Description
Technical Field
The present application relates generally to the field of semiconductor inspection technology. More specifically, the present application relates to a laser-induced charge control device, a charged particle beam detection system, and a laser-induced charge control method.
Background
Wafers are an indispensable important material in the semiconductor industry, and their quality and performance play a major role in the development of the semiconductor industry. The wafer processing has high quality requirement, complex production process and ring-and-ring buckling. In order to ensure the quality and performance of the wafer, wafer inspection is an important step in the actual production process.
Currently, common wafer inspection techniques include automated optical inspection, X-ray inspection, electron beam inspection, and the like. Along with the improvement of the wafer manufacturing process and performance requirements, the complexity of the metal structure on the wafer surface is also improved. The response of different metals to different wave band light sources is different, and a single wave band light source cannot cover all metal types on the surface of the wafer, which clearly increases the difficulty of wafer detection.
In particular, electron beam inspection, current electron beam inspection schemes typically use a charge control device of a single band laser source to assist in defect inspection of charged particles in the electron beam. However, the single-band laser source is effective only for a specific metal type/types, which results in that the current charging control device is only adapted to a specific wafer defect detection scene, the application range is limited, and the current comprehensive detection requirement of the wafer cannot be met.
In view of the foregoing, it is desirable to provide a laser-induced charge control scheme for implementing a multi-wavelength coupled laser source to adapt to multiple types/structures of wafer inspection scenarios, thereby assisting the electron beam to accomplish more comprehensive wafer defect inspection.
Disclosure of Invention
To address at least one or more of the technical problems mentioned above, the present disclosure proposes a laser-induced charging control scheme in various aspects.
In a first aspect, the present disclosure provides a laser-induced charging control apparatus comprising: the laser emission unit comprises at least two groups of laser emission components and is used for generating laser beams with different wave bands, wherein each group of laser emission components comprises a laser emitter and an off-axis parabolic mirror, and the laser beams emitted by the laser emitter are collimated and reflected by the off-axis parabolic mirror; the laser coupling unit is used for receiving the laser beams reflected by the off-axis parabolic mirrors in each group of laser emission components and coupling the laser beams to the same light path; and the laser regulation and control unit is used for receiving the coupled laser beam on the optical path, and sequentially deflecting, shaping and focusing reflecting the coupled laser beam to irradiate the surface of the semiconductor to be tested.
In some embodiments, wherein each set of laser emitting assemblies further comprises: an optical fiber; one end face of the optical fiber is connected to the laser beam emission ports of the laser emitters of the same group, and the other end face faces the off-axis parabolic mirror of the same group to serve as the laser beam emission ports of the laser emission assembly.
In some embodiments, in each set of laser emitting assemblies, the center of the laser beam emitted by the laser emitter coincides with the focal point of the off-axis parabolic mirror, and the line connecting the center of the off-axis parabolic mirror to the focal point coincides with the normal to the center of the laser beam.
In some embodiments, wherein the laser coupling unit comprises: at least one dichroic mirror for reflecting the laser beam of the first wavelength band and transmitting the laser beam of the second wavelength band.
In some embodiments, wherein the laser regulation unit comprises: a focusing beam adjusting subunit for adjusting the deflection angle of the coupled laser beam; a laser beam shaping subunit configured to shape the deflected coupled laser beam; and the laser reflection focusing subunit is used for focusing the shaped coupled laser beam and reflecting the focused coupled laser beam to the surface of the semiconductor to be tested.
In some embodiments, wherein the focused beam conditioning subunit comprises: the deflection regulating lens or the deflection regulating lens group is used for refracting the coupled laser beam towards the direction close to the semiconductor to be tested.
In some embodiments, wherein the laser beam shaping subunit comprises: the beam expanding collimation focusing lens group or the beam shrinking collimation focusing lens group is used for expanding or shrinking the spot size of the deflected coupled laser beam according to the size range of the semiconductor to be detected.
In some embodiments, wherein the laser reflection focusing subunit comprises: an off-axis parabolic mirror or mirror group for focusing and reflecting the collimated coupled laser beam onto the semiconductor surface to be measured.
In some embodiments, wherein the laser coupling unit comprises n-1 dichroic mirrors, the transmission light paths of the n-1 dichroic mirrors coincide, and the laser regulating unit is positioned on the transmission light path, n > 2; the laser emission unit comprises n groups of laser emission components, wherein one group of laser emission components is positioned on a transmission light path, laser beams emitted by the laser emission components enter the laser regulation and control unit along the transmission light path, the other n-1 groups of laser emission components are respectively positioned on reflection light paths of n-1 dichroic mirrors, and the laser beams emitted by the laser emission components are reflected by the n-1 dichroic mirrors and then are coupled with the laser beams on the transmission light path to form multiband coupled laser beams.
In some embodiments, the laser coupling unit comprises m dichroic mirrors, the transmission light paths of the m dichroic mirrors coincide, and the laser regulating unit is positioned on the transmission light path, wherein m is more than or equal to 2; the laser emission unit comprises m groups of laser emission components, the m groups of laser emission components are respectively positioned on the reflection light paths of the m dichroic mirrors, and laser beams emitted by the m groups of laser emission components are reflected to the transmission light paths through the m dichroic mirrors and are coupled into multiband coupling laser beams.
In a second aspect, the present disclosure provides a charged particle beam detection system comprising: an electron beam emitting unit for outputting an electron beam to scan a surface of the semiconductor to be measured; the laser emission unit comprises at least two groups of laser emission components and is used for generating laser beams with different wave bands, wherein each group of laser emission components comprises a laser emitter and an off-axis parabolic mirror, and the laser beams emitted by the laser emitter are collimated and reflected by the off-axis parabolic mirror; the laser coupling unit is used for receiving the laser beams reflected by the off-axis parabolic mirrors in each group of laser emission components and coupling the laser beams to the same light path; the laser regulation and control unit is used for receiving the coupled laser beam on the optical path, and sequentially deflecting, shaping and focusing reflecting the coupled laser beam to irradiate the surface of the semiconductor to be tested so as to control accumulated charges formed by the interaction of the electron beam and the semiconductor to be tested; the sample bin is used for placing the semiconductor to be tested, and the detector and the device which plays roles in shaping, focusing and reflecting in the laser regulation unit are located in a vacuum environment together with the sample bin; and the host control unit is in communication connection with the detector and is used for receiving the detection image and detecting.
In some embodiments, wherein each set of laser emitting assemblies further comprises: an optical fiber; one end face of the optical fiber is connected to the laser beam emission ports of the laser emitters in the same group, and the other end face faces the off-axis parabolic mirror in the same group to serve as the laser beam emission ports of the laser emission component, so that the laser emitters can move in a direction away from the electron beam emission unit, the sample bin and/or the host control unit.
In some embodiments, wherein the laser regulation unit comprises: a focusing beam adjusting subunit for adjusting the deflection angle of the coupled laser beam; a laser beam shaping subunit, disposed in the sample bin, for shaping the shape of the deflected coupled laser beam; and the laser reflection focusing subunit is arranged in the sample bin and is used for focusing the shaped coupled laser beam and reflecting the focused coupled laser beam to the surface of the semiconductor to be tested.
In some embodiments, in each set of laser emitting assemblies, the center of the laser beam emitted by the laser emitter coincides with the focal point of the off-axis parabolic mirror, and the line connecting the center of the off-axis parabolic mirror to the focal point coincides with the normal to the center of the laser beam.
In a third aspect, the present disclosure provides a laser-induced charging control method comprising: generating laser beams with different wave bands by using a laser emitter; carrying out collimation treatment and reflection on the laser beam by using an off-axis parabolic mirror; coupling the reflected laser beam to the same optical path using a laser coupling unit to form a coupled laser beam; the deflection angle of the coupled laser beam is adjusted by a laser adjusting and controlling unit; shaping the deflected coupled laser beam by using a laser regulation and control unit; and reflecting and focusing the shaped coupled laser beam to the surface of the semiconductor to be tested by utilizing the laser regulation and control unit.
In some embodiments, wherein the method further comprises, prior to collimating and reflecting the laser beam with the off-axis parabolic mirror: receiving a laser beam generated by a laser transmitter by using an optical fiber; and projecting the received laser beam to an off-axis parabolic mirror with an optical fiber.
In some embodiments, wherein adjusting the deflection angle of the coupled laser beam with the laser steering unit comprises: determining a target focusing position of the laser beam according to a scanning detection range of the charged particle beam detection system; and adjusting the deflection angle of the coupled laser beam by using the laser regulation and control unit so that the coupled laser beam is focused to the target focusing position.
In some embodiments, wherein shaping the deflected coupled laser beam with the laser steering unit comprises: determining the target spot size of the laser beam according to the scanning detection range of the charged particle beam detection system; and shaping the deflected coupled laser beam by using a laser regulation and control unit to ensure that the light spot size of the coupled laser beam is consistent with the target light spot size.
In some embodiments, wherein the laser beams of different wavebands include: a laser beam of a first wave band and a laser beam of a second wave band; wherein coupling the reflected laser beam to the same optical path with the laser coupling unit to form a coupled laser beam comprises: reflecting the laser beam of the first wave band to a transmission light path of the dichroic mirror through the dichroic mirror; the laser beam of the second wave band is transmitted to the transmission light path of the dichroic mirror through the dichroic mirror, so that the laser beam of the second wave band and the laser beam of the first wave band are coupled into a coupled laser beam.
In some embodiments, wherein the laser beams of different wavebands include: a laser beam of a first wave band and a laser beam of a second wave band; wherein the laser coupling unit includes: at least two dichroic mirrors, the transmission light paths of the at least two dichroic mirrors being coincident; wherein coupling the reflected laser beam to the same optical path with the laser coupling unit to form a coupled laser beam comprises: the laser beam of the first wave band and the laser beam of the second wave band are respectively reflected to the transmission light paths of the at least two dichroic mirrors through the at least two dichroic mirrors to form coupled laser beams.
By the laser-induced charge control apparatus provided above, the embodiments of the present disclosure generate multiple laser beams of different wavelength bands by the laser emitting unit including at least two sets of laser emitting components, and couple the laser beams of different wavelength bands to the same optical path by means of the laser coupling unit, thereby obtaining a multiband-coupled laser light source. And then the laser regulation and control unit is used for carrying out deflection treatment and shaping treatment, and then the laser regulation and control unit focuses and reflects the laser to the surface of the semiconductor to be tested. Since the laser light source reflected to the surface of the semiconductor to be tested comprises a plurality of wave band lights, more metal types can be covered, and therefore charged particles in the electron beam are assisted to complete more comprehensive defect detection.
Drawings
The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar or corresponding parts and in which:
FIG. 1 illustrates an exemplary block diagram of a laser-induced charge control device according to some embodiments of the present disclosure;
FIG. 2 illustrates an exemplary flow chart of a laser-induced charge control method of some embodiments of the present disclosure;
FIG. 3 illustrates an exemplary block diagram of a portion of a laser-induced charge control apparatus for forming a coupled laser beam in accordance with some embodiments of the present disclosure;
FIG. 4 illustrates an exemplary flow chart of a laser-induced charge control method of some embodiments of the present disclosure;
FIG. 5 illustrates an exemplary block diagram of a portion of a laser-induced charge control apparatus for forming a coupled laser beam in accordance with further embodiments of the present disclosure;
FIG. 6 illustrates an exemplary flow chart of a laser-induced charge control method of some embodiments of the present disclosure;
FIG. 7 illustrates an exemplary block diagram of a laser-induced charge control device according to some embodiments of the present disclosure;
FIG. 8 illustrates an exemplary flow chart of a laser beam deflection control method of some embodiments of the present disclosure;
FIG. 9 illustrates an exemplary flow chart of a laser beam shaping method of some embodiments of the present disclosure;
fig. 10 illustrates an exemplary block diagram of a charged particle beam detection system according to some embodiments of the present disclosure.
Detailed Description
The following description of the embodiments of the present disclosure will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the disclosure. Based on the embodiments in this disclosure, all other embodiments that may be made by those skilled in the art without the inventive effort are within the scope of the present disclosure.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the present disclosure is for the purpose of describing particular embodiments only, and is not intended to be limiting of the disclosure. As used in the specification and claims of this disclosure, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be further understood that the term "and/or" as used in the present disclosure and claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
As used in this specification and the claims, the term "if" may be interpreted as "when..once" or "in response to a determination" or "in response to detection" depending on the context. Similarly, the phrase "if a determination" or "if a [ described condition or event ] is detected" may be interpreted in the context of meaning "upon determination" or "in response to determination" or "upon detection of a [ described condition or event ]" or "in response to detection of a [ described condition or event ]".
Specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
Exemplary application scenarios
The principle of electron beam detection is to scan a semiconductor to be detected by using charged particles in an electron beam, so that the charged particles interact with atoms in the semiconductor to generate back scattered electrons or secondary electrons, and then collect different types of electrons to form a surface image of the semiconductor to be detected. In this process, accumulated charges may be formed on the semiconductor surface due to the charging effect, thereby affecting the imaging quality of secondary electrons.
In order to adjust the accumulated charge of the semiconductor surface, the related art controls the accumulated charge generated due to effects such as photoconduction, photoelectric, or thermal effects by irradiating the semiconductor surface with laser light. Since the electric conductivities of different metals are different, the accumulated charges are different, so that laser beams with different wave bands are required to be used for irradiation, and the accumulated charges on the semiconductor surface are flexibly and purposefully adjusted.
However, current electron beam detection schemes typically employ charge control devices for single band laser sources. The laser light source with a single wave band can only adjust the accumulated charges of part of metals, so that the current charging control device is limited by the wave band range, cannot adapt to most wafer defect detection scenes, has limited application range, and cannot meet the comprehensive detection requirements of the current wafer.
Exemplary application scenario
In view of this, the embodiment of the application provides a laser-induced charging control scheme, which forms a multi-band laser beam formed by coupling multiple laser beams with different wave bands through the combination of multiple groups of laser emission components and laser coupling units, so as to adjust charges accumulated by multiple metal parts on the semiconductor surface, and further assist charged particles to complete more comprehensive defect detection.
Fig. 1 illustrates an exemplary block diagram of a laser-induced charging control apparatus 100 according to some embodiments of the present application, as shown in fig. 1, the apparatus comprising: a laser emitting unit 110, a laser coupling unit 120 and a laser regulating unit 130. Wherein the laser emitting unit 110 is used for generating laser beams of different wavebands. The laser beam generated by the laser emitting unit 110 is coupled into the same optical path after passing through the laser coupling unit 120, so as to form a coupled laser beam. The laser regulating unit 130 sequentially deflects, shapes and focuses and reflects the coupled laser beam, and the coupled laser beam irradiates the surface of the semiconductor to be measured through the light path adjustment of the laser regulating unit.
In the present embodiment, the laser emitting unit 110 includes at least two sets of laser emitting components, each set of laser emitting components including a laser emitter 111 and an off-axis parabolic mirror 112. Different laser transmitters 111 may produce single-mode polarization maintaining continuous laser beams of different wavelength bands, each laser transmitter 111 may transmit the laser beam onto the same set of off-axis parabolic mirrors 112, and the off-axis parabolic mirrors 112 collimate the laser beam and reflect it to the laser coupling unit 120.
Further, in each set of laser emitting assemblies, the center of the laser beam emitted by the laser emitter 111 coincides with the focal point of the off-axis parabolic mirror 112, and the line connecting the center of the off-axis parabolic mirror 112 with the focal point coincides with the normal to the center of the laser beam.
It should be noted that the off-axis parabolic mirror 112 is a surface mirror, and the reflecting surface thereof is a portion of a parent paraboloid taken. The use of off-axis parabolic mirror 112 enables the non-dispersive focusing of a parallel beam or collimated point source, the off-axis design of which separates the focal point from the optical path. The off-axis parabolic mirror 112 does not produce spherical aberration and chromatic aberration, and does not introduce phase retardation and absorption loss, as compared to a lens.
In the embodiment of the present application, the off-axis parabolic mirror 112 may implement off-axis angles of different angles, such as 90 °, so as to implement beam collimation of different angles, and further, in combination with the laser coupling unit 120, may implement coupling output of laser transmitters of different wavebands.
Based on the structure of the laser-induced charging control apparatus described in the above embodiments, the present application further provides a laser-induced charging control method, and fig. 2 shows an exemplary flowchart of a laser-induced charging control method 200 according to some embodiments of the present application.
As shown in fig. 2, in step S201, laser beams of different wavelength bands are generated by a laser emitter. The laser emission unit of the embodiment comprises at least two groups of laser emission components, each laser emission component comprises a laser emitter and an off-axis parabolic mirror, and one laser emitter can generate laser beams of one wave band, so that the laser emission unit of the embodiment can at least generate laser beams of two different wave bands. Illustratively, one set of laser emitting assemblies may output 457nm single-mode polarization maintaining continuous laser beams and another set may output 523nm single-mode polarization maintaining continuous laser beams.
In step S202, the laser beam is collimated and reflected by an off-axis parabolic mirror. In this embodiment, the laser beam generated by the laser transmitter is projected onto the reflective surfaces of the same set of off-axis parabolic mirrors, which are capable of non-dispersive collimation of the point light source, thereby reflecting the collimated laser beam to the laser coupling unit.
In step S203, the reflected laser beam is coupled to the same optical path using a laser coupling unit to form a coupled laser beam. In this step, the laser coupling unit couples laser beams of different wavebands from different laser transmitters to the same optical path, forming a multi-band coupled laser beam.
In step S204, the deflection angle of the coupled laser beam is adjusted by the laser adjusting unit. In the present embodiment, the focus position of the coupled laser beam can be adjusted by adjusting the deflection angle of the coupled laser beam.
In step S205, the deflected coupled laser beam is shaped by a laser steering unit. In this embodiment, the irradiation range of the coupling laser beam can be adjusted by shaping the coupling laser beam after deflection.
In step S206, the shaped coupled laser beam is reflected and focused to the surface of the semiconductor to be tested by the laser modulation unit.
The laser-induced charging control method described in the above embodiment can generate laser beams of different wavebands by means of the laser transmitter, and reflect the laser beams of different wavebands to the laser coupling unit by the off-axis parabolic mirror, so that the laser beams are coupled to the same optical path in the laser coupling unit to form multi-band coupled laser beams, and further adapt to the accumulated charge adjustment requirements under various semiconductor detection scenes.
Further, the laser coupling unit 120 shown in any of the foregoing embodiments may include: at least one dichroic mirror 121, the dichroic mirror 121 may reflect the laser beam of the first wavelength band and transmit the laser beam of the second wavelength band. Based on the optical path transmission characteristics of the dichroic mirror 121, in combination with the design of the plurality of sets of laser emitting components in the laser emitting unit 110, two laser-induced charge control devices in which different optical designs exist for forming the portions of the coupled laser beam can be formed as described below.
One of the laser-induced charge control devices is described below with reference to fig. 1 and 3. In the laser-induced charging control device of this embodiment, the laser beams generated by one set of the laser emitting components are transmitted to the transmission light path of the beam splitter through the dichroic mirror, and the laser beams generated by the other laser emitters are reflected to the transmission light path of the beam splitter by the dichroic mirror, so as to be coupled with the laser beams transmitted from the beam splitter.
In fig. 1, taking a laser-induced charging control device including two sets of laser emission components as an example, a laser coupling unit 120 of the laser-induced charging control device includes 1 dichroic mirror 121, where one set of laser emission components is located on a transmission light path of the dichroic mirror 121, and the other set of laser emission components is located on a reflection light path of the dichroic mirror 121, and after a laser beam on the reflection light path is reflected by the dichroic mirror 121, the laser beam is coupled with a laser beam on the transmission light path to form a multiband coupled laser beam.
Fig. 3 increases the number of laser emitting components based on the laser-induced charge control apparatus shown in fig. 1, and fig. 3 shows an exemplary block diagram of a portion of an apparatus 300 for forming a coupled laser beam in the laser-induced charge control apparatus according to some embodiments of the present application. Taking a laser induced charging control apparatus including three sets of laser emitting components as an example, the laser coupling unit 120 of the laser induced charging control apparatus shown in fig. 3 includes 2 dichroic mirrors 121 whose transmission light paths coincide and whose transmission wavelength bands are identical, so that a laser beam that can propagate along the transmission light path of one of the dichroic mirrors can also propagate along the transmission light path of the other dichroic mirror.
Similarly to fig. 1, among the three groups of laser emission components, one group of laser emission components is located on the transmission light path overlapped by the 2 dichroic mirrors, and the other two groups of laser emission components are respectively located on the reflection light paths of the 2 dichroic mirrors, and the laser beams on the two reflection light paths are reflected to the transmission light path through the dichroic mirrors, and are coupled with the laser beams on the transmission light path to form coupled laser beams. Alternatively, the wavelength bands of the laser beams output from the three sets of laser emitting assemblies may be 457nm, 523nm, and 671nm, respectively. It will be appreciated that the above description of the wavelength band of the laser beam output by the laser emitting assembly is merely an example, and that the wavelength band of the laser beam output by the laser emitting assembly may take other values in practical applications, without being limited thereto.
Based on the laser induced charging control apparatus shown in fig. 1 and 3, the number of laser emitting components can be continuously increased to achieve laser coupling in more bands. Based on this, the present application provides a laser induced charging control device, wherein the laser coupling unit 120 includes n-1 dichroic mirrors 121, the laser emitting unit 110 includes n groups of laser emitting components, n is an integer greater than 2, and transmission light paths of the n-1 dichroic mirrors 121 coincide. Further, the laser regulation unit 130 is located on the transmission light path.
Among the n groups of laser emission components, one group of laser emission components is located on the transmission light path of the dichroic mirror 121, the laser beams emitted by the one group of laser emission components enter the laser regulation and control unit 130 along the transmission light path, the other n-1 groups of laser emission components are respectively located on the reflection light paths of the n-1 dichroic mirrors 121, and the laser beams emitted by the one group of laser emission components are reflected by the n-1 dichroic mirrors 121 and then are coupled with the laser beams on the transmission light path to form multiband coupled laser beams.
Based on the structure of the laser-induced charging control device shown in fig. 1 or fig. 3, the present application further provides a corresponding laser-induced charging control method, and fig. 4 shows an exemplary flowchart of a laser-induced charging control method 400 according to some embodiments of the present application.
As shown in fig. 4, in step S401, laser beams of different wavelength bands are generated by a laser emitter.
In step S402, the laser beam is collimated and reflected by an off-axis parabolic mirror. It should be noted that, the steps S401 to S402 in the present embodiment are identical to the steps S201 to S202 in the previous embodiment, and are not repeated here.
In step S403, the laser beam of the first wavelength band is reflected by the dichroic mirror onto the transmission optical path of the dichroic mirror. In this embodiment, the laser coupling unit includes one or more dichroic mirrors, where transmission light paths of the plurality of dichroic mirrors coincide and transmission bands are the same, and the laser emission unit includes a plurality of groups of laser emission components, where one group of laser emission components is located on a transmission light path of the beam splitter, and a laser beam of a first wavelength band emitted by the laser emission component propagates along the transmission light path.
In step S404, the laser beam of the second wavelength band is transmitted onto the transmission optical path of the dichroic mirror by the dichroic mirror, so that the laser beam of the second wavelength band and the laser beam of the first wavelength band are coupled into a coupled laser beam. Among the groups of laser emission components, the rest laser emission components are respectively positioned on the reflection light paths of the dichroic mirrors, and the laser beams emitted by the rest laser emission components are reflected to the transmission light paths through the spectroscope and are coupled with the laser beams of the first wave band on the transmission light paths.
In this embodiment, the number of the beam splitters may be plural, so that the reflection light paths of plural dichroic mirrors may be formed. The plurality of sets of laser emitting assemblies may be coupled with the laser beams of the first wavelength band on the transmission light path via the reflection light paths of the different dichroic mirrors, respectively. That is, in this step, the laser beam of the second wavelength band may substantially include laser beams of a plurality of wavelength bands.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, a first band of wavelengths may also be referred to as a second band of wavelengths, and similarly, a second band of wavelengths may also be referred to as a first band of wavelengths without departing from the scope of the disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In addition, in the description of the present application, unless explicitly specified otherwise, the meaning of "a plurality" is two or more.
In step S405, the deflection angle of the coupled laser beam is adjusted by the laser adjusting unit.
In step S406, the deflected coupled laser beam is shaped by a laser steering unit.
In step S407, the shaped coupled laser beam is reflected and focused to the surface of the semiconductor to be tested by the laser modulation unit. It should be noted that, the steps S405 to S407 in the present embodiment are identical to the steps S204 to S206 in the previous embodiment, and are not repeated here.
The above-described embodiment has been described in detail with respect to one of two optical designs for forming a coupled laser beam, and the other optical design is described below with reference to fig. 5.
FIG. 5 shows an exemplary block diagram of a portion 500 of a laser-induced charge control apparatus for forming coupled laser beams according to other embodiments of the present application, in which the number of laser emitting components in a laser emitting unit 110 is equal to the number of dichroic mirrors 121 in a laser coupling unit 120, and m is equal to or greater than 2, as shown in FIG. 5. In practical use, m may be an integer greater than or equal to 2, and as illustrated in fig. 5, for example, m=4, assuming that the wavelength bands of the laser beams output by the four sets of laser emission components are λ1, λ2, λ3, and λ4 in this order from bottom to top, the reflection band of the first dichroic mirror is λ1, the reflection band of the second dichroic mirror is λ2, the transmission band of the second dichroic mirror is λ1, the reflection band of the third dichroic mirror is λ3, the transmission band of the third dichroic mirror is λ1 and λ2, the reflection band of the fourth dichroic mirror is λ4, and the transmission band of the fourth dichroic mirror is λ1, λ2, and λ3.
In this embodiment, the transmission light paths of the m dichroic mirrors 121 coincide, and the m groups of laser emission components are respectively located on the reflection light paths of the m dichroic mirrors, and the laser beams emitted by the m groups of laser emission components are reflected to the transmission light paths of the dichroic mirrors by the m dichroic mirrors and are coupled into multiband coupled laser beams.
Further, the laser regulating and controlling unit 130 in the laser induced charging control device is located on the transmission light path of the m dichroic mirrors, and is used for sequentially deflecting, shaping and focusing and reflecting the coupled laser beams.
Further, in order to reduce the influence of the laser coupling unit on the optical path length of the laser beam, an ultra-thin dichroic mirror may be employed in the laser coupling unit 120 in practical applications. It will be clear to those skilled in the art that other optical elements capable of splitting a light beam into two or more light beams besides ultra-thin dichroic mirrors are equally suitable for the present application, such as dichroic mirrors and the like, without undue limitation.
Based on the structure of the laser-induced charging control device shown in fig. 5, the present application further provides a corresponding laser-induced charging control method, and fig. 6 shows an exemplary flowchart of a laser-induced charging control method 600 according to some embodiments of the present application.
As shown in fig. 6, in step S601, laser beams of different wavelength bands are generated by a laser emitter.
In step S602, the laser beam is collimated and reflected by an off-axis parabolic mirror. It should be noted that, the steps S601 to S602 in the present embodiment are identical to the steps S201 to S202 in the previous embodiment, and are not repeated here.
In step S603, the laser beam of the first wavelength band and the laser beam of the second wavelength band are reflected onto the transmission optical paths of the at least two dichroic mirrors by the at least two dichroic mirrors, respectively, to form coupled laser beams. In this embodiment, the number of dichroic mirrors in the laser coupling unit is identical to the number of laser emitting components in the laser emitting unit, and the laser beams generated by each group of laser emitting components are reflected onto the transmission optical path of one dichroic mirror via the dichroic mirror. Since the transmission light paths of the dichroic mirrors in the laser coupling unit coincide, the laser beam reflected by each dichroic mirror can be coupled to the coincident transmission light paths, forming a coupled laser beam.
Similar to the embodiment shown in fig. 4, although the terms "first," "second," etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, a first band of wavelengths may also be referred to as a second band of wavelengths, and similarly, a second band of wavelengths may also be referred to as a first band of wavelengths without departing from the scope of the disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature.
In step S604, the deflection angle of the coupled laser beam is adjusted by the laser adjusting unit.
In step S605, the deflected coupled laser beam is shaped by a laser steering unit.
In step S606, the shaped coupled laser beam is reflected and focused to the surface of the semiconductor to be tested by the laser adjusting unit. It should be noted that, the steps S604 to S606 in the present embodiment are identical to the steps S204 to S206 in the previous embodiment, and are not repeated here.
The foregoing embodiments describe the laser-induced charge control device in detail with respect to a portion of the device for forming the coupled laser beam, and the following returns to fig. 1 to further describe the laser regulation unit in the laser-induced charge control device.
Fig. 7 shows an exemplary structural diagram of a laser-induced charging control apparatus 700 according to some embodiments of the present application, and as shown in fig. 7, the laser regulation unit 130 includes: a focused beam conditioning subunit 131, a laser beam shaping subunit 132, and a laser reflection focusing subunit 133. The focusing beam adjusting and controlling subunit 131 is configured to adjust a deflection angle of the coupled laser beam, the laser beam shaping subunit 132 is configured to shape the deflected coupled laser beam, and the laser reflection focusing subunit 133 is configured to focus the shaped coupled laser beam and reflect the focused coupled laser beam to the surface of the semiconductor 151 to be tested.
Illustratively, the focused beam steering subunit may include a deflection steering lens or a deflection steering lens group, such as a wedge mirror. The wedge mirror is an optical element with a plane forming a certain angle with the other plane, and after light passes through the wedge mirror, the light beam deflects towards a thicker direction. In some embodiments, two identical wedge-shaped mirrors can be used in pairs, and as a group of deflection regulating lens groups, by rotating any one wedge-shaped mirror in the deflection regulating lens groups, outgoing light rays can be changed in any direction in a pyramid with incident light as an axis. The focusing position of the coupled laser beam can be regulated and controlled by the focusing beam regulating and controlling subunit, for example, the coupled laser beam can be refracted towards the direction close to the semiconductor to be tested.
Further, with the focus beam steering subunit, some embodiments of the present application may accomplish the steering of the focus position of the coupled laser beam by the following laser beam deflection control method. Fig. 8 illustrates an exemplary flow chart of a laser beam deflection control method 800 of some embodiments of the present application, as shown in fig. 8, in step S801, a target focus position of a laser beam is determined from a scan detection range of a charged particle beam detection system.
In step S802, the deflection angle of the coupled laser beam is adjusted by the laser adjusting unit so that the coupled laser beam is focused to the target focus position. In the embodiment employing the wedge mirror, the focal position of the coupled laser beam is determined by the deflection angle of the wedge mirror and the optical path distance, and the deflection angle of the wedge mirror in the present embodiment may be set to 1 °, 2 °, or other values, for example, without being excessively limited.
Returning to fig. 1, the laser induced charging control apparatus of the present embodiment needs to meet the field of view requirement of the charged particle beam detection system, and for this purpose, needs to match the focused spot sizes of different sizes. Based on this consideration, the laser beam shaping subunit may illustratively include an expanding collimating focusing lens group or a shrinking collimating focusing lens group for magnifying or shrinking the spot size of the deflected coupled laser beam according to the size range of the semiconductor under test. When a large range of focusing light spots are needed, a beam expanding and collimating focusing lens group is adopted in the laser beam shaping subunit.
Further, with the laser beam shaping subunit, some embodiments of the present application may accomplish spot shape and size adjustment by the following laser beam shaping method. Fig. 9 illustrates an exemplary flow chart of a laser beam shaping method 900 of some embodiments of the present application, as shown in fig. 9, in step S901, a target spot size of a laser beam is determined according to a scan detection range of a charged particle beam detection system. In step S902, the deflected coupled laser beam is shaped by a laser modulation unit to make its spot size consistent with the target spot size.
Returning to fig. 1, in the embodiment of the present application, the laser reflection focusing subunit needs to refocus the shaped coupled laser beam and reflect the refocused coupled laser beam to the surface of the semiconductor to be tested. In particular, an off-axis parabolic mirror or set of mirrors may be used to focus and reflect the collimated coupled laser beam onto the semiconductor surface under test. Wherein the reflective surface of the off-axis parabolic mirror is a portion of a parent paraboloid cut-out that is capable of focusing a parallel light beam without dispersion. The reflecting mirror group can be formed by splicing a plurality of plane reflecting mirrors at different angles, and light rays at different positions in the laser beam are focused and reflected to the surface of the semiconductor to be detected at different reflecting angles by using the plane reflecting mirrors placed at different angles.
The foregoing embodiments have been described in detail with respect to each unit in the laser-induced charge control apparatus, and the laser-induced charge control apparatus shown in each embodiment is capable of generating multiple laser beams of different wavelength bands by the laser emitting units of the two sets of laser emitting assemblies, and coupling the laser beams of different wavelength bands to the same optical path by means of the laser coupling unit, thereby obtaining a multiband-coupled laser light source.
In addition, the laser-induced charging control device can deflect, shape and focus and reflect the laser-induced charging control device through the laser regulation and control unit, so that laser spots irradiated to the surface of the semiconductor to be detected meet the field-of-view requirement of the charged particle beam detection system.
Further, in order to solve the heat dissipation problem of the existing charge control device applied in the charged particle beam detection system, the present application further provides another laser induced charge control device based on the laser induced charge control device provided in any of the foregoing embodiments, in which an optical fiber is added in each group of laser emitting components.
One end face of the optical fiber is connected to the laser beam emission ports of the laser emitters in the same group, and the other end face faces the off-axis parabolic mirror in the same group to serve as the laser beam emission ports of the laser emission component. Based on the structure of the laser induced charging control apparatus, in the laser induced charging control method according to any of the foregoing embodiments, before the laser beam is collimated and reflected by the off-axis parabolic mirror, the laser beam generated by the laser emitter may be received by the optical fiber, and then the received laser beam may be projected onto the reflecting surface of the off-axis parabolic mirror by the optical fiber.
The laser transmitter can be moved towards the direction far away from the charged particle beam detection system through light, so that the heat source of the laser induced charging control device is far away from the charged particle beam detection system, the heat is removed from the charged particle beam detection system, the heat dissipation problem is effectively solved, and the laser output power is prevented from being limited by heat dissipation.
Further, applying the laser induced charging control apparatus provided in any of the foregoing embodiments to a charged particle beam detection system may form a charged particle beam detection system as shown in fig. 10, fig. 10 showing an exemplary block diagram of a charged particle beam detection system 1000 according to some embodiments of the present application.
As shown in fig. 10, the charged particle beam detection system of the present embodiment includes: an electron beam emitting unit 140, a laser emitting unit 110, a laser coupling unit 120, a laser modulating unit 130, a sample chamber 150, and a host control unit 160. The electron beam emission unit 140 is provided with an electron gun 141, an electromagnetic lens 142, a small aperture diaphragm 143 and a focusing objective lens 144 with a scanning coil, the electron beam emitted by the electron gun 141 forms a high-energy electron beam under the accelerating voltage, the high-energy electron beam is focused into a light spot with a tiny diameter through the electromagnetic lens 142 and the small aperture diaphragm 143, and then the electron beam is bombarded to the surface of the semiconductor 151 to be tested in the sample bin 150 point by point in a raster scanning mode after passing through the focusing objective lens 144 with the scanning coil, and the electron beam interacts with atoms in the semiconductor 151 to be tested, so that electron signals with different depths are excited. Also in vacuum with the sample chamber 150 is a detector 152. The detector 152 is configured to collect electrons formed by the interaction of the electron beam with the semiconductor to be tested and transmit the electrons to a host control unit 160 communicatively connected thereto, and defect detection is performed in the host control unit 160 based on the formed detection image.
Further, the laser emitting unit 110 includes at least two groups of laser emitting components for generating laser beams with different wavebands, wherein each group of laser emitting components includes a laser emitter 111 and an off-axis parabolic mirror 112, and the laser beam emitted by the laser emitter 111 is collimated and reflected by the off-axis parabolic mirror 112. The laser coupling unit 120 is configured to receive the laser beams reflected by the off-axis parabolic mirrors 112 in each set of laser emitting assemblies and couple the laser beams to the same optical path. The laser regulation and control unit 130 is configured to receive the coupled laser beam on the optical path, and sequentially deflect, shape, and focus and reflect the coupled laser beam, so as to irradiate the surface of the semiconductor to be tested, so as to control accumulated charges formed by interaction between the electron beam and the semiconductor to be tested.
In addition to the semiconductor to be tested and the detector, the devices in the laser control unit 130 that perform the shaping and focusing reflection functions are also in a vacuum environment together with the sample chamber 150, that is, the laser beam shaping subunit 132 and the laser reflection focusing subunit 133 are in a vacuum environment together with the electron beam.
It will be appreciated that the foregoing embodiments describe a variety of laser induced charging control arrangements, any of which may be applied to the charged particle beam detection system described above in connection with fig. 10. Illustratively, in the charged particle beam detection system shown in the present embodiment, each set of laser emitting components may further include an optical fiber, in addition to the laser emitter and the off-axis parabolic mirror, one end surface of which is connected to the laser beam emitting port of the laser emitter, and the other end surface of which serves as the laser beam emitting port of the laser emitting component, so that the laser emitter can be moved in a direction away from the electron beam emitting unit, the sample bin and/or the host control unit, thereby removing heat from the charged particle beam detection system, solving the heat dissipation problem.
Also by way of example, an off-axis parabolic mirror in a laser emitting assembly may be positioned in a charged particle beam detection system in such a way that the center of the laser beam emitted by the laser emitter coincides with the focal point of the off-axis parabolic mirror and the line connecting the center of the off-axis parabolic mirror to the focal point coincides with the normal to the center of the laser beam.
It will be appreciated that any of the structural features of the laser induced charging control apparatus described above in connection with fig. 1 to 9 are equally applicable to the charged particle beam detection system shown in fig. 10, and will not be described again here.
In summary, the present application provides a laser-induced charging control device, which forms a multiband laser beam formed by coupling laser beams with multiple different wavebands through the combination of multiple groups of laser emission components and laser coupling units, so as to adjust charges accumulated in different metal portions on a semiconductor surface, thereby assisting charged particles to complete more comprehensive defect detection.
Further, some embodiments of the present application further provide another laser-induced charging control device, which uses an optical fiber to place a laser emitter away from a charged particle beam detection system, so as to remove heat from the charged particle beam detection system, improve heat dissipation performance, and relieve the limitation of heat dissipation on laser power.
Correspondingly, some embodiments of the present application further provide a laser-induced charging control method, which uses the laser emitting component to generate laser beams with different wavebands, and couples the laser beams with different wavebands to the same optical path by means of the laser coupling unit, so as to implement a multi-band coupled laser source. The laser regulation and control unit is further utilized to finish the regulation and control of the laser beam, so that the multiband coupling laser beam is irradiated to the surface of the semiconductor to be tested, and the charged particles are assisted to finish the defect detection of the semiconductor to be tested.
In addition, some embodiments of the present application further provide a charged particle beam detection system, which uses any of the aforementioned laser-induced charging control devices, and adjusts the accumulated charge on the surface of the semiconductor to be detected by using the multiband coupled laser beam output by the laser-induced charging control device, so as to reduce the influence of the charging effect on the secondary electron imaging quality.
While various embodiments of the present application have been shown and described herein, it will be obvious to those skilled in the art that such embodiments are provided by way of example only. Numerous modifications, changes, and substitutions will occur to those skilled in the art without departing from the spirit and scope of the present application. It should be understood that various alternatives to the embodiments of the present application described herein may be employed in practicing the application. The appended claims are intended to define the scope of the application and are therefore to cover all equivalents and alternatives falling within the scope of these claims.
Claims (20)
1. A laser-induced charging control apparatus, comprising:
the laser emission unit comprises at least two groups of laser emission components and is used for generating laser beams with different wave bands, wherein each group of laser emission components comprises a laser emitter and an off-axis parabolic mirror, and the laser beams emitted by the laser emitter are collimated and reflected by the off-axis parabolic mirror;
the laser coupling unit is used for receiving the laser beams reflected by the off-axis parabolic mirrors in each group of laser emission components and coupling the laser beams to the same light path; and
and the laser regulation and control unit is used for receiving the coupled laser beam on the optical path, and sequentially deflecting, shaping and focusing and reflecting the coupled laser beam to irradiate the surface of the semiconductor to be tested.
2. The laser-induced charging control apparatus of claim 1 wherein each set of laser emitting assemblies further comprises: an optical fiber;
one end face of the optical fiber is connected to the laser beam emission ports of the laser transmitters of the same group, and the other end face faces the off-axis parabolic mirror of the same group to serve as the laser beam emission ports of the laser emission components.
3. The laser-induced charge control device of claim 1, wherein in each set of laser emitting assemblies, a center of a laser beam emitted by the laser emitter coincides with a focal point of the off-axis parabolic mirror, and a line connecting the center of the off-axis parabolic mirror and the focal point coincides with a normal to the center of the laser beam.
4. The laser-induced charge control device of claim 1 wherein the laser coupling unit comprises: at least one dichroic mirror for reflecting the laser beam of the first wavelength band and transmitting the laser beam of the second wavelength band.
5. The laser-induced charge control device of claim 1, wherein the laser regulation unit comprises:
a focusing beam adjusting and controlling subunit, configured to adjust a deflection angle of the coupled laser beam;
a laser beam shaping subunit configured to shape the deflected coupled laser beam; and
and the laser reflection focusing subunit is used for focusing the shaped coupled laser beam and reflecting the focused coupled laser beam to the surface of the semiconductor to be tested.
6. The laser induced charge control device of claim 5 wherein the focused beam conditioning subunit comprises: and the deflection regulating lens or the deflection regulating lens group is used for refracting the coupled laser beam towards a direction close to the semiconductor to be tested.
7. The laser-induced charge control apparatus of claim 5 wherein the laser beam shaping subunit comprises: and the beam expanding collimation focusing lens group or the beam shrinking collimation focusing lens group is used for expanding or shrinking the spot size of the deflected coupling laser beam according to the size range of the semiconductor to be detected.
8. The laser-induced charge control device of claim 5, wherein the laser-reflective focusing subunit comprises: and the off-axis parabolic mirror or the reflecting mirror group is used for focusing and reflecting the collimated coupled laser beam to the surface of the semiconductor to be tested.
9. The laser induced charge control apparatus according to any one of claims 1-8 wherein the laser coupling unit comprises n-1 dichroic mirrors, the transmission light paths of the n-1 dichroic mirrors coincide, the laser steering unit is located on the transmission light path, n > 2;
the laser emission unit comprises n groups of laser emission components, wherein one group of laser emission components is positioned on the transmission light path, laser beams emitted by the laser emission components enter the laser regulation and control unit along the transmission light path, the other n-1 groups of laser emission components are respectively positioned on the reflection light paths of the n-1 dichroic mirrors, and the laser beams emitted by the laser emission components are coupled with the laser beams on the transmission light path into multiband coupling laser beams after being reflected by the n-1 dichroic mirrors.
10. The laser induced charging control device according to any one of claims 1 to 8, wherein the laser coupling unit comprises m dichroic mirrors, transmission light paths of the m dichroic mirrors coincide, the laser regulation unit is located on the transmission light path, and m is equal to or greater than 2;
The laser emission unit comprises m groups of laser emission components, the m groups of laser emission components are respectively positioned on reflection light paths of the m dichroic mirrors, and laser beams emitted by the m groups of laser emission components are reflected to the transmission light paths through the m dichroic mirrors and are coupled into multiband coupled laser beams.
11. A charged particle beam detection system, comprising:
an electron beam emitting unit for outputting an electron beam to scan a surface of the semiconductor to be measured;
the laser emission unit comprises at least two groups of laser emission components and is used for generating laser beams with different wave bands, wherein each group of laser emission components comprises a laser emitter and an off-axis parabolic mirror, and the laser beams emitted by the laser emitter are collimated and reflected by the off-axis parabolic mirror;
the laser coupling unit is used for receiving the laser beams reflected by the off-axis parabolic mirrors in each group of laser emission components and coupling the laser beams to the same light path;
the laser regulation and control unit is used for receiving the coupled laser beam on the optical path, and sequentially deflecting, shaping and focusing reflecting the coupled laser beam to irradiate the surface of the semiconductor to be tested so as to control accumulated charges formed by the interaction of the electron beam and the semiconductor to be tested;
The sample bin is used for placing the semiconductor to be tested, the detector and the device which plays roles in shaping, focusing and reflecting in the laser regulation and control unit are located in a vacuum environment together with the sample bin, and the detector is used for collecting electrons formed by interaction of the electron beam and the semiconductor to be tested so as to form a detection image; and
and the host control unit is in communication connection with the detector and is used for receiving the detection image and detecting.
12. The charged particle beam detection system of claim 11, wherein each set of laser emitting assemblies further comprises: an optical fiber;
one end face of the optical fiber is connected to the laser beam emission ports of the laser emitters in the same group, and the other end face faces the off-axis parabolic mirror in the same group to serve as the laser beam emission ports of the laser emission components, so that the laser emitters can move in a direction away from the electron beam emission unit, the sample bin and/or the host control unit.
13. The charged particle beam detection system of claim 11, wherein said laser steering unit comprises:
a focusing beam adjusting and controlling subunit, configured to adjust a deflection angle of the coupled laser beam;
A laser beam shaping subunit, disposed in the sample bin, for shaping the shape of the deflected coupled laser beam; and
the laser reflection focusing subunit is arranged in the sample bin and is used for focusing the shaped coupled laser beam and reflecting the focused coupled laser beam to the surface of the semiconductor to be tested.
14. Charged-particle beam detection system according to any of claims 11-13, wherein in each set of laser emitting assemblies the laser beam centre emitted by the laser emitter coincides with the focal point of the off-axis parabolic mirror and the line connecting the centre of the off-axis parabolic mirror with the focal point coincides with the normal to the laser beam centre.
15. A laser induced charging control method, comprising:
generating laser beams with different wave bands by using a laser emitter;
the laser beam is collimated and reflected by an off-axis parabolic mirror;
coupling the reflected laser beam to the same optical path using a laser coupling unit to form a coupled laser beam;
adjusting the deflection angle of the coupled laser beam by using a laser adjusting and controlling unit;
shaping the deflected coupled laser beam by using the laser regulation and control unit; and
And reflecting and focusing the shaped coupled laser beam to the surface of the semiconductor to be tested by utilizing the laser regulation and control unit.
16. The laser induced charge control method of claim 15 wherein prior to collimating and reflecting the laser beam with an off-axis parabolic mirror, the method further comprises:
receiving a laser beam generated by the laser transmitter by using an optical fiber; and
the received laser beam is projected to the off-axis parabolic mirror using the optical fiber.
17. The laser induced charge control method of claim 15 wherein adjusting the deflection angle of the coupled laser beam with a laser steering unit comprises:
determining a target focusing position of the laser beam according to a scanning detection range of the charged particle beam detection system; and
and adjusting the deflection angle of the coupled laser beam by using the laser regulation and control unit so that the coupled laser beam is focused to the target focusing position.
18. The laser induced charge control method of claim 15 wherein shaping the deflected coupled laser beam with the laser steering unit comprises:
Determining the target spot size of the laser beam according to the scanning detection range of the charged particle beam detection system; and
and shaping the deflected coupled laser beam by using the laser regulation and control unit to ensure that the light spot size of the coupled laser beam is consistent with the target light spot size.
19. The laser induced charging control method according to any one of claims 15-18, wherein the laser beams of different wavelength bands include: a laser beam of a first wave band and a laser beam of a second wave band; wherein coupling the reflected laser beam to the same optical path with the laser coupling unit to form a coupled laser beam comprises:
reflecting the laser beam of the first wave band to a transmission light path of the dichroic mirror through the dichroic mirror;
and transmitting the laser beam of the second wave band to a transmission light path of the dichroic mirror through the dichroic mirror, so that the laser beam of the second wave band and the laser beam of the first wave band are coupled into a coupled laser beam.
20. The laser induced charging control method according to any one of claims 15-18, wherein the laser beams of different wavelength bands include: a laser beam of a first wave band and a laser beam of a second wave band; wherein the laser coupling unit includes: at least two dichroic mirrors, the transmission light paths of which coincide;
Wherein coupling the reflected laser beam to the same optical path with the laser coupling unit to form a coupled laser beam comprises:
and reflecting the laser beams of the first wave band and the laser beams of the second wave band to transmission light paths of the at least two dichroic mirrors through the at least two dichroic mirrors respectively to form the coupled laser beams.
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