CN117711900A

CN117711900A - Substrate processing apparatus and substrate processing method using the same

Info

Publication number: CN117711900A
Application number: CN202311088347.1A
Authority: CN
Inventors: 高亨植
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2022-09-15
Filing date: 2023-08-25
Publication date: 2024-03-15

Abstract

A substrate processing method, comprising: classifying the kind of substrate processing process in which the focus ring is used; classifying a plurality of focus rings; selecting a specific focus ring suitable for a specific substrate processing process corresponding to the kind of the sorted substrate processing process from the sorted plurality of focus rings; and performing a specific substrate processing process using the selected specific focus ring. Sorting the plurality of focus rings includes: the plurality of focus rings are classified into two or more levels.

Description

Substrate processing apparatus and substrate processing method using the same

Cross Reference to Related Applications

The present patent application claims priority from korean patent application No. 10-2022-016698, filed on 9 and 15 of 2022, and korean patent application No.10-2023-0022954, filed on 21 of 2023, the disclosures of which are incorporated herein by reference in their entirety.

Technical Field

Embodiments of the inventive concept relate to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus in which components are classified by grade and used for their proper processes, and a substrate processing method using the same.

Background

Various processes may be used to fabricate the semiconductor device. For example, a semiconductor device may be manufactured by subjecting a silicon wafer to a photolithography process, an etching process, a deposition process, or the like. Various fluids may be used in such processes. For example, the plasma may be used in an etching process and/or a deposition process. A focus ring may be used to control the plasma.

Disclosure of Invention

Some embodiments of the inventive concept provide a substrate processing apparatus capable of uniformly controlling plasma in an edge region and a substrate processing method using the same.

Some embodiments of the inventive concept provide a substrate processing apparatus configured to use components suitable for each process and a substrate processing method using the same.

Some embodiments of the inventive concept provide a substrate processing apparatus capable of improving a yield and a substrate processing method using the same.

The objects of the inventive concept are not limited to the above description.

According to some embodiments of the inventive concept, a substrate processing method includes: classifying the kind of substrate processing process in which the focus ring is used; classifying a plurality of focus rings; selecting a specific focus ring suitable for a specific substrate processing process corresponding to the kind of the sorted substrate processing process from the sorted plurality of focus rings; and performing a specific substrate processing process using the selected specific focus ring. Sorting the plurality of focus rings includes: the plurality of focus rings are classified into two or more levels.

According to some embodiments of the inventive concept, a substrate processing method includes: classifying components for the substrate processing apparatus according to the class; classifying the substrate processing process; selecting a component having a grade suitable for the categorized substrate processing process; placing the selected component into a substrate processing apparatus; loading a substrate into a substrate processing apparatus; a process is performed on a substrate. Classifying the components according to the rank includes: the grades of the components are classified based on grain size.

According to some embodiments of the inventive concept, a substrate processing apparatus includes: a process chamber providing a process space; a chuck disposed in the process space and supporting the substrate; and a focus ring disposed on the chuck. The grain size of the focus ring is equal to or less than about 14.23 μm. The resistivity of the focus ring is equal to or less than about 1 Ω.

Drawings

The above and other features of the inventive concept will become more apparent by describing in detail embodiments thereof with reference to the attached drawings.

Fig. 1 illustrates a cross-sectional view showing a substrate processing apparatus according to some embodiments of the inventive concept.

Fig. 2 shows an enlarged cross-sectional view representing the X portion of fig. 1.

Fig. 3 illustrates a perspective view showing a focus ring according to some embodiments of the inventive concept.

Fig. 4 illustrates a perspective view showing a spray head according to some embodiments of the inventive concept.

Fig. 5 illustrates a flowchart representative of a substrate processing method in accordance with some embodiments of the inventive concept.

Fig. 6 to 10 show cross-sectional views illustrating a substrate processing method according to the flowchart of fig. 5.

Detailed Description

Embodiments of the inventive concept will be described more fully hereinafter with reference to the accompanying drawings. Like reference numerals may denote like elements throughout the drawings.

It will be understood that the terms "first," "second," "third," and the like are used herein to distinguish one element from another, but the elements are not limited by these terms. Thus, in another embodiment, a "first" element of an embodiment may be described as a "second" element.

It is to be understood that the description of features or aspects in each embodiment should generally be taken as applicable to other similar features or aspects in other embodiments unless the context clearly indicates otherwise.

As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates to the contrary.

As used herein, the term "about" includes the values mentioned and means within acceptable deviation of the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the particular measurement (e.g., limitations of the measurement system). For example, "about" may mean within one or more standard deviations as understood by one of ordinary skill in the art. Further, one of ordinary skill in the art will understand that while a parameter may be described herein as having a "about" a particular value, it should be understood that the parameter may be precisely the particular value or approximately the particular value within a measurement error, according to example embodiments. Other uses of these and similar terms describing relationships between components should be construed in a similar manner.

In this description, the symbol D1 may indicate a first direction, the symbol D2 may indicate a second direction crossing the first direction D1, and the symbol D3 may indicate a third direction crossing each of the first direction D1 and the second direction D2. The first direction D1 may be referred to as a vertical direction. Each of the second direction D2 and the third direction D3 may be referred to as a horizontal direction.

Referring to fig. 1, a substrate processing apparatus a may be provided. The substrate processing apparatus a may be configured to subject a substrate to an etching process and/or a deposition process. The term "substrate" used in the present specification may denote a silicon (Si) wafer, but the inventive concept is not limited thereto. The substrate processing apparatus a may process a substrate using plasma. The substrate processing apparatus a may generate plasma in various ways. For example, the substrate processing apparatus a may be a Capacitively Coupled Plasma (CCP) apparatus and/or an Inductively Coupled Plasma (ICP) apparatus. For ease of illustration, a CCP type substrate processing apparatus will be shown and discussed below. The substrate processing apparatus a may include a process chamber 1, a stage 7, a showerhead 3, a Direct Current (DC) generator 2, a Radio Frequency (RF) generator 4, a vacuum pump VP, and a gas supply device GS.

The process chamber 1 may provide a process space 1h. The substrate processing process may be performed in the process space 1h. The process space 1h may be separated from the external space. During the substrate processing process, the process space 1h may be in a substantially vacuum state. The process chamber 1 may have a cylindrical shape, but the inventive concept is not limited thereto.

The table 7 may be located in the process chamber 1. For example, the table 7 may be located in the process space 1h. The stage 7 may support and/or hold a substrate. The substrate processing process may be performed in a state in which the substrate is placed on the table 7. The table 7 will be further described below.

The showerhead 3 may be located in the process chamber 1. For example, the showerhead 3 may be located in the process space 1h. The spray head 3 may be spaced apart from the table 7 in an upward direction. For example, a portion of the process space 1h may be disposed between the showerhead 3 and the table 7. The gas supplied from the gas supply device GS can be uniformly injected into the process space 1h through the showerhead 3. The spray head 3 will be described in more detail below.

The DC generator 2 may apply DC power to the table 7. The DC power applied from the DC generator 2 can rigidly place the substrate at a specific position on the table 7.

The RF generator 4 may supply RF power to the table 7. Thereby, the plasma in the process space 1h can be controlled. The detailed description thereof will be further described below.

The vacuum pump VP may be connected to the process space 1h. The vacuum pump VP may apply vacuum pressure to the process space 1h during the substrate processing process.

The gas supply device GS may supply gas to the process space 1h. The air supply device GS may comprise, for example, an air tank, a compressor and valves. The plasma may be generated from a portion of the gas supplied to the process space 1h by the gas supply device GS.

Fig. 2 shows an enlarged cross-sectional view representing the X portion of fig. 1. Fig. 3 illustrates a perspective view showing a focus ring according to some embodiments of the inventive concept. Fig. 4 illustrates a perspective view showing a spray head according to some embodiments of the inventive concept.

Referring to fig. 2, the substrate processing apparatus (see a of fig. 1) may further include a focus ring FR and an edge ring ER. The table 7 may include a chuck 71 and a cooling plate 73.

The substrate may be disposed on a chuck 71. The chuck 71 may fix the substrate at a specific position thereon. Chuck 71 may include a chuck body 711, a plasma electrode 713, a chuck electrode 715, and a heater 717.

The chuck body 711 may have a cylindrical shape. The chuck body 711 may include ceramic, but the inventive concept is not limited thereto. The substrate may be disposed on a top surface of the chuck body 711.

A plasma electrode 713 may be located in the chuck body 711. The plasma electrode 713 may include aluminum (Al). The plasma electrode 713 may have a disk shape, but the inventive concept is not limited thereto. RF power may be applied to the plasma electrode 713. For example, RF generator 4 may apply RF power to plasma electrode 713. The RF power applied to the plasma electrode 713 may control the plasma in the process space (see 1h of fig. 1).

The chuck electrode 715 may be located in the chuck body 711. The chuck electrode 715 may be positioned higher than the plasma electrode 713.DC power may be applied to the chuck electrode 715. For example, the DC generator 2 may apply DC power to the chuck electrode 715. DC power applied to the chuck electrode 715 can rigidly place the substrate in a particular position on the chuck body 711. The chuck electrode 715 may include aluminum (Al), but the inventive concept is not limited thereto.

The heater 717 may be located in the chuck body 711. A heater 717 may be located between the chuck electrode 715 and the plasma electrode 713. The heater 717 may include a hot wire. For example, the heater 717 may include concentric circular heating wires. The heater 717 may radiate heat to the surrounding environment. Thus, the chuck body 711 may have an elevated temperature.

The cooling plate 73 may be located below the chuck 71. For example, the chuck 71 may be located on the cooling plate 73. The cooling plate 73 may provide cooling holes 73h. The cooling water may flow in the cooling holes 73h. The cooling water in the cooling holes 73h may absorb heat from the cooling plate 73.

The edge ring ER may surround the chuck body 711.

Referring to fig. 2 and 3, the focus ring FR may be located on the table 7 and/or the edge ring ER. The focus ring FR may be detachable from the table 7 and/or the edge ring ER. The focus ring FR may have a first axis AX1 extending in the first direction D1. The focus ring FR may have a ring shape around the first axis AX1. The focus ring FR may comprise silicon carbide (SiC). However, the inventive concept is not so limited, and the focus ring FR may comprise silicon (Si) or any other suitable material.

Referring to fig. 4, the spray head 3 may include a spray head body 31. The spray head body 31 may have a disk shape. The head body 31 may have a second axis AX2 extending in the first direction D1 (e.g., extending longitudinally in the first direction D1). The second axis AX2 may be the same as the first axis (see AX1 of fig. 3), but the inventive concept is not limited thereto. The spray head body 31 may provide an air hole 31h. The air holes 31h may penetrate the head body 31 in the first direction D1. The air holes 31h may be provided in plurality. The plurality of air holes 31h may be spaced apart from each other in the horizontal direction. For convenience of explanation, a single air hole 31h will be described below, and it should be understood that the description of the single air hole 31h may be applicable to a plurality of air holes. The showerhead 3 may include silicon carbide (SiC). For example, the showerhead body 31 may include silicon carbide (SiC). However, the inventive concept is not limited thereto, and the showerhead 3 may include silicon (Si) or any other suitable material.

Referring to fig. 5, a substrate processing method S may be provided. The substrate processing method S may be a method of processing a substrate using the substrate processing apparatus a discussed with reference to fig. 1 to 4. The substrate processing method S may include: classifying the substrate processing process according to the kind (or type) (S1); classifying the components according to the class (S2); selecting a component suitable for a substrate processing process (S3); placing the selected component into a substrate processing apparatus (S4); loading the substrate into a substrate processing apparatus (S5); and performing a process on the substrate (S6).

The process classification operation S1 may include: the substrate processing process is classified into two or more levels. The substrate processing process may include, for example, an etching process. In the process classifying operation S1, the etching process may be classified into two or more levels according to the kind (or type) of the substrate. Substrate processing processes may be categorized based on process difficulty. For example, high Aspect Ratio Contact (HARC) etch processes may be classified as relatively high process difficulty. The high difficulty process can be implemented with high quality components.

The component classification operation S2 may include: the components are classified into two or more levels. The assembly may be a component part for a substrate processing process. The component may be, for example, a focus ring (see FR of fig. 2) and/or a showerhead (see 3 of fig. 1). However, the inventive concept is not so limited, and the assembly may represent other assembly components for a substrate processing process.

The components may be categorized based on various criteria. For example, components may be categorized based on grain size, resistivity, and/or transmissivity.

When classifying components based on grain size, class a may be assigned to (or allocated to) components having grain sizes equal to or smaller than the first grain size. Grade B may be assigned (or allocated) to components having a grain size greater than the first grain size and equal to or less than the second grain size. Grade C may be assigned (or allocated) to components having a grain size greater than the second grain size. The level a may be higher than the level B. The level of level B may be higher than level C. The first grain size may be smaller than the second grain size. The third grain size may be greater than the second grain size. The first grain size may be, for example, about 9.01 μm. The second grain size may be, for example, about 11.42 μm. The third grain size may be, for example, about 14.23 μm. However, the inventive concept is not limited to the above values. Grain size can be measured in a variety of ways. For example, a separate instrument may be used to measure the grain size of the component.

When classifying components based on resistivity, components having a resistivity equal to or less than about 0.01Ω may be classified as class a. Components having a resistivity greater than about 0.01 Ω and less than about 1 Ω may be classified as class B. Components having a resistivity greater than about 1 Ω may be classified as class C.

When classifying components based on transmittance, components having relatively low transmittance may be classified as higher-ranked. Transmittance may be measured in a variety of ways. For example, a specific transmittance meter may be used to measure the transmittance of the component.

As described herein, components may be classified based on, for example, grain size, resistivity, and/or transmissivity. However, the inventive concept is not limited thereto. For example, according to an embodiment, components may be categorized based on other physical attributes.

The component selection operation S3 may include: the process and component levels are matched to each other. For example, a particular component may be selected that is appropriate for a particular substrate processing process. High-level components can be used in high-difficulty processes. For example, components classified as class a may be used in HARC processes.

A substrate processing method performed by using a specific component suitable for a specific substrate processing process will be described in detail below.

Referring to fig. 5 and 6, the component placement operation S4 may include: allowing the table 7 to receive thereon a focus ring FR specifically selected to be suitable for the level of the substrate processing process. The component is discussed with reference to fig. 6 as a focus ring FR, but the inventive concept is not so limited. The spray head 3 may be selected, for example, by the process described with reference to fig. 5. The focus ring FR may be attached to the table 7. Alternatively, according to an embodiment, the focus ring FR may be provided on the table 7 without using a separate adhesive means.

Referring to fig. 5, 7 and 8, the substrate loading operation S5 may include: the substrate W is placed on the stage 7. The substrate W may include a silicon (Si) wafer, but the inventive concept is not limited thereto. The substrate W may be fixed to the chuck 71. For example, when a Direct Current (DC) voltage is applied to the chuck electrode 715, the substrate W may be fixed at a specific position on the top surface of the chuck body 711.

Referring to fig. 5 and 9, the substrate process operation S6 may include: process gas G is supplied to the process space 1h. The process gas G supplied from the gas supply device GS may be distributed onto the substrate W through the showerhead 3.

Referring to fig. 5 and 10, the substrate process operation S6 may include generating plasma PL. When Radio Frequency (RF) power is applied from the RF generator 4 to the plasma electrode 713, an electric field may be generated in the process space 1h. The electric field generated in the process space 1h may form plasma PL from a portion of the process gas G supplied in the process space 1h. Plasma PL may subject substrate W to a processing process.

A substrate processing apparatus according to some embodiments of the inventive concept and a substrate processing method using the same may sort components based on grades and use them for an appropriate substrate processing process. For example, the class a focus ring and/or class a showerhead may be used in high difficulty processes such as High Aspect Ratio Contact (HARC) processes. Thus, a highly difficult process may increase yield.

According to the substrate processing apparatus and the substrate processing method using the same according to some embodiments of the inventive concept, the class B assembly may be used in a general process other than a high difficulty process. Thus, the class a component can be prevented from being used in a common process. Therefore, waste of components can be reduced.

A substrate processing apparatus and a substrate processing method using the same according to some embodiments of the inventive concept may not use the class C component. Accordingly, a reduction in substrate yield due to low quality components can be prevented.

According to the substrate processing apparatus and the substrate processing method using the same of some embodiments of the inventive concept, plasma can be uniformly controlled on an edge region.

A substrate processing apparatus according to some embodiments of the inventive concept and a substrate processing method using the same may use components suitable for each process.

According to the substrate processing apparatus and the substrate processing method using the same of some embodiments of the inventive concept, the yield may be improved.

While the present inventive concept has been particularly shown and described with reference to embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present inventive concept as defined by the following claims.

Claims

1. A substrate processing method, comprising:

classifying the kind of substrate processing process in which the focus ring is used;

classifying a plurality of focus rings;

selecting a specific focus ring suitable for a specific substrate processing process corresponding to the kind of the sorted substrate processing process from the sorted plurality of focus rings; and

the particular substrate processing process is performed using the particular focus ring selected,

wherein classifying the plurality of focus rings comprises: the plurality of focus rings are classified into two or more levels.

2. The substrate processing method of claim 1, wherein classifying the plurality of focus rings into two or more classes comprises: the plurality of focus rings are classified based on a grain size of each focus ring of the plurality of focus rings.

3. The substrate processing method of claim 2, wherein classifying the plurality of focus rings into two or more classes comprises:

assigning class a to focus rings having a grain size equal to or smaller than the first grain size;

assigning class B to focus rings having a die size greater than the first die size and equal to or less than a second die size; and

assigning class C to focus rings having a grain size greater than the second grain size and equal to or less than a third grain size,

wherein the first grain size is smaller than the second grain size, and

wherein the third grain size is greater than the second grain size.

4. A substrate processing method according to claim 3, wherein

The first grain size is 9.01 μm,

the second grain size is 11.42 μm and

the third grain size is 14.23 μm.

5. A substrate processing method according to claim 3, wherein

The specific substrate processing process is a high aspect ratio contact HARC etch process, and

the specific focus ring is assigned class a.

6. The substrate processing method of claim 1, wherein classifying the plurality of focus rings into two or more classes comprises: the plurality of focus rings are classified based on a resistivity of each focus ring of the plurality of focus rings.

7. The substrate processing method of claim 1, wherein classifying the plurality of focus rings into two or more classes comprises: the plurality of focus rings are classified based on a transmittance of each focus ring of the plurality of focus rings.

8. The substrate processing method of claim 1, wherein performing the particular substrate processing process comprises:

placing the selected specific focus ring into a substrate processing apparatus;

loading a substrate into the substrate processing apparatus; and

the substrate is processed in the substrate processing apparatus.

9. A substrate processing method, comprising:

sorting components according to grade, the components being for use in a substrate processing apparatus;

classifying the substrate processing process;

selecting a component having a grade suitable for the categorized substrate processing process;

placing the selected component into the substrate processing apparatus;

loading a substrate into the substrate processing apparatus; and

a process is performed on the substrate in question,

wherein classifying the components according to the rank comprises: the grades of the components are classified based on grain size.

10. The substrate processing method of claim 9, wherein classifying the components according to rank comprises:

assigning class a to components having a grain size equal to or smaller than the first grain size; and

grade B is assigned to components having a grain size greater than the first grain size.

11. The substrate processing method according to claim 10, wherein the first grain size is 9.01 μm.

12. The substrate processing method of claim 10, wherein the categorized substrate processing process is a high aspect ratio contact HARC etch process.

13. The substrate processing method of claim 12, wherein components for the high aspect ratio contact HARC etch process are assigned class a.

14. The substrate processing method of claim 9, wherein the selected component is a focus ring.

15. A substrate processing apparatus comprising:

a process chamber providing a process space;

a chuck disposed in the process space and supporting a substrate; and

a focusing ring disposed on the chuck,

wherein the crystal grain size of the focus ring is equal to or smaller than 14.23 μm, and

wherein the resistivity of the focus ring is equal to or less than 1Ω.

16. The substrate processing apparatus of claim 15, wherein

The crystal grain size of the focusing ring is equal to or smaller than 11.42 μm, and

the resistivity of the focus ring is equal to or less than 0.01Ω.

17. The substrate processing apparatus of claim 16, wherein the focus ring has a grain size of 9.01 μm or less.

18. The substrate processing apparatus of claim 17, wherein the substrate processing apparatus performs a high aspect ratio contact HARC etch process.

19. The substrate processing apparatus of claim 15, further comprising:

a spray head spaced from the chuck in an upward direction.

20. The substrate processing apparatus of claim 15, wherein the focus ring comprises silicon carbide SiC.