CN117711894A - Scanning robot for high-temperature ion implantation - Google Patents
Scanning robot for high-temperature ion implantation Download PDFInfo
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- CN117711894A CN117711894A CN202311779254.3A CN202311779254A CN117711894A CN 117711894 A CN117711894 A CN 117711894A CN 202311779254 A CN202311779254 A CN 202311779254A CN 117711894 A CN117711894 A CN 117711894A
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- temperature ion
- scanning robot
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a scanning robot for high-temperature ion implantation, which belongs to the technical field of semiconductor ion implantation equipment, wherein the tail end of the scanning robot is provided with an electrostatic chuck, the back side of the electrostatic chuck is sequentially provided with a thermal diffusion disc, a heating module, a heat insulation plate and a water cooling disc, and graphite sheaths are sleeved outside the thermal diffusion disc, the heating module, the heat insulation plate and the water cooling disc; the scanning robot comprises a mechanical arm for controlling the electrostatic chuck to move and/or rotate, the mechanical arm is of a hollow structure, and cables connected with the electrostatic chuck and the heating module are connected to a central controller of the high-temperature ion implantation system through the hollow structure of the mechanical arm. The invention realizes uniform heating of the electrostatic chuck, solves the problem of nonuniform temperature of the surface of the wafer, is easy to realize in engineering, has higher efficiency and lower cost, and is beneficial to improving the temperature control precision and improving the efficiency and quality of the semiconductor process.
Description
Technical Field
The invention belongs to the technical field of semiconductor ion implantation equipment, and particularly relates to a scanning robot for high-temperature ion implantation.
Background
In some current ion implantation processes, a high temperature ion implantation method is required, i.e., ion implantation is performed on a heated wafer. In the prior art, a tungsten wire is generally adopted to generate heat radiation to heat the wafer; however, in practical application, it is found that the uniformity of the temperature of the heated wafer is difficult to be ensured by adopting a mode of generating heat radiation by using a tungsten wire, and the temperature of the wafer is usually high at a position which is closer to the tungsten wire and relatively low at a position which is farther from the tungsten wire; the uniformity of the high temperature ion implantation process may also be affected by non-uniform heating of the wafer. If the wafer temperature is uniformly diffused after waiting for a long time, the ion implantation process is performed at a high temperature, and the processing efficiency of the ion implantation process is low.
Disclosure of Invention
Based on the technical problems in the prior art, the invention provides the scanning robot for high-temperature ion implantation, solves the problems of uneven wafer temperature or low process efficiency in the existing high-temperature ion implantation process equipment, integrates a heating structure on the scanning robot, heats the wafer while performing ion implantation, has a simple and portable structure, and is easy to produce and apply.
According to the technical scheme, the invention provides a scanning robot for high-temperature ion implantation, wherein an electrostatic chuck is arranged at the tail end of the scanning robot, a heat diffusion disc, a heating module, a heat insulation plate and a water cooling disc are sequentially arranged on the back side of the electrostatic chuck, and graphite sheaths are sleeved on the outer sides of the heat diffusion disc, the heating module, the heat insulation plate and the water cooling disc; the scanning robot comprises a mechanical arm for controlling the electrostatic chuck to move and/or rotate, the mechanical arm is of a hollow structure, and cables connected with the electrostatic chuck and the heating module are connected to a central controller of the high-temperature ion implantation system through the hollow structure of the mechanical arm.
Further, a side of the heat diffusion disc, which is away from the electrostatic chuck, is provided with a heat diffusion disc groove, and the heating module is positioned in the heat diffusion disc groove.
Further, the thermal diffusion disc is of a disc-shaped structure made of graphite, the shape of the thermal diffusion disc is matched with that of the electrostatic chuck, and the thickness of the thermal diffusion disc is 12mm-36mm.
Further, the heating module comprises a heater base, a heating channel is formed in one side, close to the electrostatic chuck, of the heater base, a tungsten wire is arranged in the heating channel, and a quartz blocking piece is arranged between the heater base and the thermal diffusion disc.
Further, a cable channel is formed in the heat insulation plate, a cable through hole is formed in the water cooling disc, and a vacuum electrode penetrates into the cable through hole; the vacuum electrode is connected with one side of the water-cooled disc, which is away from the electrostatic chuck; the cable passes through the cable channel and then is connected with the vacuum electrode; one end of the vacuum electrode, which is far away from the electrostatic chuck, is positioned in the hollow structure of the mechanical arm and is connected to a central controller of the high-temperature ion implantation system through a rear end cable.
Further, the water-cooled disk has a coolant channel therein, the coolant channel being connected to a coolant delivery system.
Further, the graphite sheath comprises a titanium alloy sleeve and a graphite protective layer positioned outside the titanium alloy sleeve.
Further, the ion implantation system further comprises a temperature measuring device, wherein the temperature measuring device is arranged on the back surface of the electrostatic chuck, and a cable of the temperature measuring device is connected to a central controller of the high-temperature ion implantation system through a hollow structure of the mechanical arm.
Further, the mechanical arm comprises a base, a movable arm, an extension arm and a connector which are sequentially connected, wherein the base is connected with a process cavity of the high-temperature ion implantation system, and the connector is connected with the water cooling disc.
Further, the connector is rotatably connected with the extension arm or the extension arm and the movable arm around a first rotating shaft, and the first rotating shaft is parallel to the length direction of the extension arm; the connector is rotatably connected with the water cooling disc around a second rotating shaft, and the second rotating shaft is perpendicular to the electrostatic chuck and perpendicular to the first rotating shaft.
Compared with the prior art, the scanning robot for high-temperature ion implantation has the following beneficial technical effects:
1. according to the scanning robot for high-temperature ion implantation, the graphite heat diffusion disc is arranged between the lower part of the electrostatic chuck and the tungsten wire, so that heat of the tungsten wire is uniformly dispersed and applied to the electrostatic chuck, and the problems of uneven heating of the electrostatic chuck and uneven temperature of the surface of a wafer are avoided.
2. The scanning robot for high-temperature ion implantation fills the blank of the products in the prior art, and realizes that the electrostatic chuck and the heating module are separated, so that the existing industrialized electrostatic chuck products can be adopted, a new electrostatic chuck is not required to be redesigned and produced, and the scanning robot is easy to realize in engineering, higher in efficiency and lower in cost.
3. The scanning robot for high-temperature ion implantation adopts the titanium alloy sleeve, is high-temperature resistant and light in weight, and is used for stably supporting and forming an integral structure; a graphite protective layer is arranged outside the titanium alloy sleeve, so that impurity ions generated by direct striking of ion beams on the titanium alloy and pollution to a wafer are avoided.
4. The scanning robot for high-temperature ion implantation adopts the mechanical arm with a hollow structure, so that cables are effectively protected, and the cables are prevented from interfering with the scanning implantation process; in the process, the mechanical arm can control the electrostatic chuck and the wafer adsorbed on the electrostatic chuck to stretch, move, overturn, rotate and the like, is flexible and quick in control, and is beneficial to improving the ion implantation efficiency.
Drawings
FIG. 1 is a schematic view of a partial cross-sectional structure of an embodiment of the present invention.
Fig. 2 is a schematic diagram of the whole structure of a scanning robot according to an embodiment of the present invention.
Reference numerals in the drawings illustrate:
1. an electrostatic chuck; 11. an electrostatic chuck electrode; 2. a heat diffusion plate; 3. a heating module; 31. a heater base; 32. a heating channel; 33. tungsten filament; 4. a water-cooled disc; 5. a graphite sheath; 6. a mechanical arm; 61. a base; 62. a moving arm; 63. an extension arm; 64. a connector; 7. a heat insulating plate; 8. a cable; 81. a vacuum electrode; 9. quartz barrier sheets.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. Embodiments of the invention and features of the embodiments may be combined with each other without conflict.
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, or units and not for limiting the order or interdependence of the functions performed by such devices, modules, or units.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that "one or more" is intended to be construed as "one or more" unless the context clearly indicates otherwise.
The invention provides a scanning robot for high-temperature ion implantation, which belongs to the technical field of semiconductor ion implantation equipment, solves the problems of uneven wafer temperature or low process efficiency in the existing high-temperature ion implantation process equipment, realizes the integration of a heating structure on the scanning robot, heats a wafer while carrying out ion implantation, has a simple and light structure, and is easy to produce and apply. More specifically, the tail end of the scanning robot for high-temperature ion implantation is provided with an electrostatic chuck, the back side of the electrostatic chuck is sequentially provided with a heat diffusion disc, a heating module, a heat insulation plate and a water cooling disc, and graphite sheaths are sleeved on the outer sides of the heat diffusion disc, the heating module, the heat insulation plate and the water cooling disc; the scanning robot comprises a mechanical arm for controlling the electrostatic chuck to move and/or rotate, the mechanical arm is of a hollow structure, and cables connected with the electrostatic chuck and the heating module are connected to a central controller of the high-temperature ion implantation system through the hollow structure of the mechanical arm. The invention realizes uniform heating of the electrostatic chuck, solves the problem of nonuniform temperature of the surface of the wafer, is easy to realize in engineering, has higher efficiency and lower cost, and is beneficial to improving the temperature control precision and improving the efficiency and quality of the semiconductor process.
Referring to fig. 1 and 2, a scanning robot for high temperature ion implantation according to an embodiment of the present invention mainly includes an electrostatic chuck 1 and a mechanical arm 6 for controlling the electrostatic chuck 1 to move and/or rotate. The tail end of a mechanical arm 6 of the scanning robot is provided with an electrostatic chuck 1, one side of the front surface of the electrostatic chuck 1 is a working surface and is used for contacting and adsorbing and holding materials (such as wafers) to be subjected to ion implantation, the back side of the electrostatic chuck 1 is sequentially provided with a thermal diffusion disc 2, a heating module 3, a heat insulation plate 7 and a water cooling disc 4, graphite sheaths 5 are sleeved on the outer sides of the thermal diffusion disc 2, the heating module 3, the heat insulation plate 7 and the water cooling disc 4, and the graphite sheaths 5 are used for connecting the electrostatic chuck 1, the thermal diffusion disc 2, the heating module 3, the heat insulation plate 7 and the water cooling disc 4 into a whole. The side of the water-cooled disk 4 remote from the electrostatic chuck 1 is connected with a mechanical arm 6.
The electrostatic chuck 1 can be, for example, an existing high-temperature-resistant electrostatic chuck product, and a new electrostatic chuck is not required to be redesigned and produced, so that the electrostatic chuck is easy to realize in engineering, high in efficiency and low in cost. The electrostatic chuck 1 has an electrostatic chuck electrode 11 (high temperature resistant electrode, having high temperature resistance, corrosion resistance, non-tackiness, etc.), and is made of teflon as a whole. The electrostatic chuck 1 and the heating module 3 and other components need to be connected with cables for power supply or signal transmission and the like, the mechanical arm 6 is of a hollow structure, the cables 8 of the electrostatic chuck 1 and the heating module 3 are connected to a central controller of the high-temperature ion implantation system through the hollow structure of the mechanical arm 6, the cables are effectively protected, and the cables are prevented from interfering with the scanning implantation process. For this purpose, it can be understood that the heat diffusion plate 2, the heating module 3, the heat insulation plate 7 and/or the water cooling plate 4 are provided with through holes according to the need, so that the cables (and the electrostatic chuck electrode 11) can pass through, and specific positions are arranged at the edges, for example, so as to avoid affecting the functions of the parts; the through hole on the water-cooled disc 4 is optionally positioned in the middle, so that the water-cooled disc is convenient to connect with the mechanical arm 6 and the cable is convenient to penetrate into the mechanical arm 6.
The heat diffusion disc 2 is preferably a disc-shaped structure made of graphite, and the shape of the heat diffusion disc 2 is matched with that of the electrostatic chuck 1, for example, the heat diffusion disc is in a round shape with consistent size, so that the heat radiated by the heating module 3 is diffused and uniformly distributed at all positions on the plane of the electrostatic chuck 1 by utilizing the high thermal conductivity of the graphite. The thickness of the thermal diffusion disc 2 is preferably 12mm-36mm, and too thin the thermal diffusion disc will cause the temperature distribution of the electrostatic chuck 1 to be still affected by the arrangement of the tungsten wires 33 of the heating module 3, and too thick the thermal diffusion disc will cause the heat energy loss to be increased and the heat conduction time to be increased. Further preferably, one side of the thermal diffusion disc 2 is closely attached to the electrostatic chuck 1, and one side of the thermal diffusion disc 2, which is opposite to the electrostatic chuck 1, is provided with a thermal diffusion disc groove, and the heating module 3 is positioned in the thermal diffusion disc groove; in other words, the thermal diffusion plate 2 has a side wall, forms a fully-enclosed graphite thermal diffusion plate, and surrounds the heating module 3 around the side surface, so that the characteristics of quick heating and quick heat dissipation of graphite are utilized, and the thermal diffusion plate can play a good heat dissipation effect and ensure the reliability of temperature when the wafer is quickly heated in the injection process. Further preferably, the thickness of the heat diffusion plate 2 having the heat diffusion plate grooves at the bottom (upper in fig. 1) of the heat diffusion plate grooves is 12mm, the thickness of the peripheral cylindrical side walls is 30mm, and the depth of the heat diffusion plate grooves is 24.5mm.
The heating module 3 includes a heater base 31, where a heating channel 32 is formed on a side close to the electrostatic chuck 1 and a tungsten wire 33 (only a part of which is schematically depicted in the drawing) is formed in the heater base 31, and the heating channel 32 and the tungsten wire 33 are, for example, formed in a serpentine or spiral shape, and are wound so as to cover the range of the electrostatic chuck 1 as uniformly as possible. Preferably, a Dan Yingzu spacer 9 is provided between the heating module 3 and the heat diffusion plate 2, more specifically a Dan Yingzu spacer 9 is provided between the heater base 31 and the heat diffusion plate 2, and the quartz blocking spacer 9 closes the opening side of the heating channel 32. The quartz baffle plate 9 is a transparent quartz plate, heat is transmitted through radiation, the quartz can well penetrate through the radiation, and the tungsten wire 33 is enclosed to uniformly transmit the heat radiation, so that the wafer is uniformly heated, and the problem that graphite scraps possibly generated by the heat diffusion disc 2 fall onto the tungsten wire 33 to be carbonized can be avoided.
Further preferably, the heating cables connected to the two ends of the tungsten filament 33 are connected to a dc power source, instead of using ac power or using a switching circuit to implement heating at high heating power, the conventional switching circuit requires relatively large current, and intermittent heating causes thermal shock; the direct current power supply is adopted to heat the tungsten wire 33 with constant current, and the temperature can be accurately and stably controlled within a small variation range.
The heat insulating plate 7 is, for example, a ceramic heat insulating plate, and serves as a heat insulating function between the heating module 3 and the water cooling pan 4. The cable channel is arranged in the heat insulating plate 7, a cable through hole is arranged in the middle of the water cooling disc 4, a vacuum electrode 81 penetrates into the cable through hole, the vacuum electrode 81 is connected with one side of the water cooling disc 4, which is back to the electrostatic chuck 1, in a sealing way, and a cable 8 (only a part of which is schematically drawn in the figure) penetrates through the cable channel and then is connected with the vacuum electrode 81. The cable 8 is, for example, a high-temperature-resistant cable with the outer diameter of 4mm, the cable 8 is wrapped in the heat insulation plate 7 and is not in direct contact with the heating module 3 and the water cooling disc 4, and the service life of the cable 8 is prolonged. The end of the vacuum electrode 81 remote from the electrostatic chuck 1 is located in the hollow structure of the mechanical arm 6 and is connected to the central controller of the high temperature ion implantation system by a rear end cable, which may be a conventional cable, without the same high temperature requirements as the cable 8.
The water-cooled disk 4 is provided with a coolant channel, and the coolant channel is connected with a coolant conveying system, so that coolant is circularly introduced into the water-cooled disk 4 to cool down, and the structure (particularly the mechanical arm 6) is prevented from overheating. More specifically, for example, the water-cooling pan 4 is formed by split-type processing, and includes an upper cover plate and a lower trough plate, the lower trough plate being provided with water-cooling channels, the upper cover plate sealing open sides of the water-cooling channels to form coolant passages.
The graphite sheath 5 comprises a titanium alloy sleeve and a graphite protective layer located outside the titanium alloy sleeve. The titanium alloy material has higher structural strength, high temperature resistance and light weight, and is used for stably supporting and forming an integral structure; and the weight of the structure is not greatly increased, and the driving mode and driving force design of the existing scanning robot can be adopted. A graphite protective layer is arranged outside the titanium alloy sleeve, so that impurity ions and pollution to a wafer caused by direct striking of ion beams on the titanium alloy are avoided.
Preferably, a temperature measuring device is further included for monitoring the temperature of the electrostatic chuck 1, and a temperature measuring end of the temperature measuring device, such as a thermocouple, is disposed at the back surface of the electrostatic chuck 1 so as not to affect the adsorption effect of the electrostatic chuck 1, and a cable of the temperature measuring device (in the same manner as the cable 8 described above) is connected to a central controller of the high temperature ion implantation system through a hollow structure of the mechanical arm 6.
Referring to fig. 2, in a preferred embodiment, the mechanical arm 6 includes a base 61, a moving arm 62, an extension arm 63, and a connector 64, which are sequentially connected. The base 61 is connected to a process chamber of a high temperature ion implantation system. The movable arm 62 includes, for example, two-section rigid structures, and is connected by a controllably rotatable shaft between the front-section rigid structure and the base 61, between the two-section rigid structures, and between the rear-section rigid structure and the extension arm 63, so that the operations such as expansion, rotation, and translation can be realized. The extension arm 63 is, for example, tubular in shape, and is used to keep the electrostatic chuck 1 or other structure away from the base 61 and the movable arm 62, preventing the ion beam from contacting these mechanical structures during ion implantation. The connector 64 is connected with the water cooling plate 4. Optionally, a graphite protective layer is provided on the outside of the extension arm 63 and the connector 64.
Further, the joint 64 is rotatably connected to the extension arm 63 or the extension arm 63 is rotatably connected to the movable arm 62 about a first rotation axis, which is parallel to the longitudinal direction of the extension arm 63; in other words, it may be configured that the electrostatic chuck 1 is capable of controlling the wafer thereon to rotate (flip) about the extension arm 63 so that, for example, when the electrostatic chuck 1 is flipped to a horizontal state, the ion beam passes over the wafer without contacting the wafer, and the electrostatic chuck 1 is flipped up to start scanning implantation.
The connector 64 is rotatably connected with the water cooling disc 4 around a second rotation axis, and the second rotation axis is perpendicular to the electrostatic chuck 1 and perpendicular to the first rotation axis; in other words, the electrostatic chuck 1 may be configured to control the wafer thereon to rotate in the plane of the wafer, so that after one or several scans, the wafer may be rotated, for example, by 90 degrees, and then scanned, so that the ion implantation effect is more uniform.
In summary, the scanning robot for high-temperature ion implantation is provided with the graphite thermal diffusion disc between the lower part of the electrostatic chuck and the tungsten filament, so that the heat of the tungsten filament is uniformly dispersed and applied to the electrostatic chuck, uneven heating of the electrostatic chuck is avoided, and further, the wafer on the electrostatic chuck is heated through the electrostatic chuck with uniform temperature, and the uniform temperature of the wafer is ensured. The scheme fills the blank of the product in the prior art, and realizes that the electrostatic chuck and the heating module are separated, so that the existing industrialized electrostatic chuck product can be adopted, the novel electrostatic chuck is not required to be redesigned and produced, and the novel electrostatic chuck is easy to realize in engineering, high in efficiency and low in cost. Meanwhile, the temperature control precision is improved, and the semiconductor process efficiency and quality are improved.
It should be noted that the scanning robot for high temperature ion implantation of the present invention is particularly suitable for a production process of, for example, siGe fin field effect transistors (FinFET). The SiGe FinFET structure includes a thin film of SiGe and requires ion implantation during processing. In the prior art, after ion implantation is performed on, for example, a monocrystalline silicon wafer, the Si lattice on the surface is broken to form an amorphous structure, and then the surface layer lattice can be recovered by heat treatment by utilizing the unbroken lattice structure deep in the silicon wafer. However, since SiGe is only a thin layer, the lattice structure is broken completely during ion implantation, and then the lattice structure cannot be recovered basically by heat treatment, so that the quality of SiGe FinFET produced by conventional ion implantation system process is greatly compromised. By adopting the scanning robot to carry out the high-temperature ion implantation process and setting the required process parameters and matching with the uniform, accurate and stable temperature control effect of the invention, the invention can realize the scanning implantation of the thinner SiGe layer, break the lattice structure and simultaneously recover the broken lattice, thereby finally having the required lattice structure after the implantation is completed. Therefore, the invention has breakthrough and important effect on advanced semiconductor device manufacturing process.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The scanning robot for high-temperature ion implantation is characterized in that an electrostatic chuck (1) is arranged at the tail end of the scanning robot, a heat diffusion disc (2), a heating module (3), a heat insulation plate (7) and a water cooling disc (4) are sequentially arranged on the back side of the electrostatic chuck (1), and a graphite sheath (5) is sleeved outside the heat diffusion disc (2), the heating module (3), the heat insulation plate (7) and the water cooling disc (4); the scanning robot comprises a mechanical arm (6) for controlling the electrostatic chuck (1) to move and/or rotate, the mechanical arm (6) is of a hollow structure, and cables (8) connected with the electrostatic chuck (1) and the heating module (3) are connected to a central controller of the high-temperature ion implantation system through the hollow structure of the mechanical arm (6).
2. Scanning robot for high temperature ion implantation according to claim 1, characterized in that the side of the thermal diffusion plate (2) facing away from the electrostatic chuck (1) has a thermal diffusion plate recess, in which the heating module (3) is located.
3. Scanning robot for high temperature ion implantation according to claim 1, characterized in that the thermal diffusion plate (2) is a disk-like structure made of graphite, the shape of the thermal diffusion plate (2) is matched to the electrostatic chuck (1), the thickness of the thermal diffusion plate (2) is 12mm-36mm.
4. Scanning robot for high temperature ion implantation according to claim 1, characterized in that the heating module (3) comprises a heater base (31), the heater base (31) being provided with a heating channel (32) at a side close to the electrostatic chuck (1) and a tungsten wire (33) therein, a quartz barrier (9) being provided between the heater base (31) and the thermal diffusion plate (2).
5. The scanning robot for high-temperature ion implantation as claimed in claim 1, wherein a cable channel is provided inside the heat insulation plate (7), a cable through hole is provided in the water cooling disc (4), and a vacuum electrode (81) is penetrated into the cable through hole; the vacuum electrode (81) is connected with one side of the water cooling disc (4) which is opposite to the electrostatic chuck (1); the cable (8) passes through the cable channel and is connected with the vacuum electrode (81); one end of the vacuum electrode (81) far away from the electrostatic chuck (1) is positioned in the hollow structure of the mechanical arm (6) and is connected to a central controller of the high-temperature ion implantation system through a rear end cable.
6. Scanning robot for high temperature ion implantation according to claim 1, characterized in that the water cooled tray (4) has coolant channels therein, which are connected to a coolant conveying system.
7. Scanning robot for high temperature ion implantation according to claim 1, characterized in that the graphite sheath (5) comprises a titanium alloy sleeve and a graphite protective layer located outside the titanium alloy sleeve.
8. The scanning robot for high temperature ion implantation according to claim 1, further comprising a temperature measuring device provided at the back of the electrostatic chuck (1), a cable of the temperature measuring device being connected to a central controller of a high temperature ion implantation system through a hollow structure of the mechanical arm (6).
9. Scanning robot for high temperature ion implantation according to any of claims 1-8, characterized in that the robotic arm (6) comprises a base (61), a moving arm (62), an extension arm (63) and a connector (64) connected in sequence, the base (61) being connected with a process chamber of a high temperature ion implantation system, the connector (64) being connected with the water cooled tray (4).
10. The scanning robot for high-temperature ion implantation according to claim 9, wherein between the joint (64) and the extension arm (63) or between the extension arm (63) and the moving arm (62) is rotatably connected about a first rotation axis, the first rotation axis being parallel to a length direction of the extension arm (63); the connector (64) is rotatably connected with the water cooling disc (4) around a second rotation axis which is perpendicular to the electrostatic chuck (1) and perpendicular to the first rotation axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311779254.3A CN117711894A (en) | 2023-12-22 | 2023-12-22 | Scanning robot for high-temperature ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311779254.3A CN117711894A (en) | 2023-12-22 | 2023-12-22 | Scanning robot for high-temperature ion implantation |
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|---|---|
| CN117711894A true CN117711894A (en) | 2024-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311779254.3A Pending CN117711894A (en) | 2023-12-22 | 2023-12-22 | Scanning robot for high-temperature ion implantation |
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| Country | Link |
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| CN (1) | CN117711894A (en) |
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