CN117691462A - High-power heightening multisection transmission filtering vertical plane emitting laser - Google Patents
High-power heightening multisection transmission filtering vertical plane emitting laser Download PDFInfo
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Abstract
The invention discloses a high-power heightening multisection transmission filtering vertical plane emitting laser, which comprises: a substrate; a DBR reflection unit arranged on the surface of the substrate; the laser gain unit and the transmission filter unit are arranged on one side of the reflecting unit, which is far away from the substrate, and are adjacently and alternately stacked to form a multi-section structure, and the stacking arrangement direction is vertical to the substrate; the laser gain units emit laser respectively after being electrified, the laser emitted along the direction away from the reflecting units is output after passing through the plurality of transmission filter units, and the laser emitted towards the reflecting units is reflected by the reflecting units and is output after passing through the plurality of transmission filter units. The invention adopts an incident laser structure, and solves the problems of two DBRs, a short cavity, a low gain, a spectrum line width, high reflectivity, low transmission, low power and the like of the traditional VCSEL by adopting the structural design of one DBR, a long cavity, multiple sections, high gain, narrow spectral line, light filtering, low reflectivity and high power of the light output end.
Description
Technical Field
The invention relates to the field of laser devices, in particular to a high-power heightening multisection transmission filtering vertical plane emitting laser.
Background
The conventional VCSEL vertical cavity surface emitting laser generally uses an optical structure of an F-P laser cavity type composed of two DBR mirrors, and has the following problems: 1) In order to select a single-cavity single-section single-mode working mode, the length of a resonant cavity needs to be short by only about one wavelength, the length of an optical gain interval is limited, the reflectivity of an emitting end is required to be up to 99%, only about 1% of optical power is output, and the intensity of emitted light is greatly inhibited; 2) The resonant cavity is short, and simultaneously, the spectrum is wide, and the quality of the output light source is poor.
Disclosure of Invention
Therefore, the embodiment of the invention provides a high-power heightened multi-section transmission filtering vertical plane emitting laser, which effectively improves the optical gain by greatly increasing the volume and the number of beneficial units, effectively realizes laser output with stronger monochromaticity by adding the positive feedback effect of mutual optical pumping excitation between a plurality of layers of transmission filtering units and each gain unit, greatly improves the output efficiency of light by a low-reflectivity high-transmissivity output layer, and effectively solves the problems of output optical power inhibition, spectrum linewidth, poor performance and the like caused by the short resonant cavity and small optical gain of the traditional VCSEL and the high reflectivity of the DBR at the output end.
The embodiment of the invention provides a high-power heightening multisection gain transmission filtering vertical plane emitting laser, which comprises the following components: a substrate; a DBR reflection unit provided on the substrate surface; the laser gain units and the transmission filter units are arranged on one side, far away from the substrate, of the DBR reflection unit, and are stacked in a staggered manner to form a multi-section structure, and the stacking direction of the laser gain units and the transmission filter units is perpendicular to the substrate; the laser gain units emit laser respectively after being electrified, the laser emitted along the direction away from the DBR reflecting units is output after passing through the transmission filtering units, and the laser emitted towards the DBR reflecting units is reflected by the DBR reflecting units and is output after passing through the transmission filtering units.
Compared with the prior art, the technical effect achieved after the technical scheme is adopted is as follows: the high-power heightened multi-section transmission filtering vertical plane emitting laser is different from two DBR high-reflectivity short cavity working modes of a traditional F-P laser cavity, adopts a light incidence type laser working mode, only one DBR reflecting unit is used for reflecting, and the rest is a laser gain unit and a transmission filtering unit. The laser gain units can emit laser independently after being electrified, and among the laser emitted in the direction away from the DBR reflecting unit, monochromatic light corresponding to the wavelength of the transmission filtering unit can pass through the transmission filtering unit and be output; among the laser beams emitted toward the DBR reflecting unit, monochromatic light corresponding to the wavelength of the DBR reflecting unit is reflected and then output after the filtering action of the transmission filtering units, so that the transmission filtering units and the DBR reflecting unit can select the laser beams with the specified wavelength, and the monochromaticity of the output light is better; each laser gain unit can be used as an optical pumping source of other laser gain units, and the laser gain units are mutually excited in a coherent mode, so that the luminous efficiency and the monochromaticity of the laser are improved; in addition, compared with a single-cavity single-section single-mode working mode of an F-P laser cavity, the wavelength of output light of the high-power heightening multi-section transmission filtering vertical plane emitting laser is determined by the cavity length of the transmission filtering unit and the DBR reflecting unit instead of the laser gain unit, so that the laser gain unit has no thickness or cavity length limitation, the length of an optical gain area can be increased to increase optical gain, and meanwhile, the number of sections of the laser gain unit and the transmission filtering unit can be increased to further improve the light intensity of the output light; the DBR reflection unit, the laser gain unit and the transmission filter unit are vertically stacked on the substrate to output vertical light, so that space on the substrate can be effectively utilized, and multiple sections of vertical DBR reflection units, laser gain units and transmission filter units can be arranged on the same substrate to realize multi-section high-gain high-power optical power output.
Further, the center working wavelength of the output light of the high-power heightening multisection transmission filtering vertical plane emitting laser is lambda 0 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the DBR reflection unit has a multi-layer structure, two adjacent layers have a period, n represents the effective light refractive index of any two adjacent layers, and the period has a thickness ofAnd/or, each layer thickness of the DBR reflection unit is +.>
After adopting the technical proposalThe technical effects are achieved: the DBR reflection unit is designed to be capable of reflecting the required monochromatic light wavelength lambda 0 The reflection rate is extremely high, the returned monochromatic light is filtered again through the plurality of transmission filter units, and the monochromaticity of the output light is improved.
Further, the DBR reflection unit is formed by alternately stacking a first semiconductor material layer and a second semiconductor material layer with different refractive indexes, wherein the light refractive index of the first semiconductor material layer is n 1 The thickness of the first semiconductor material layer isThe light refractive index of the second semiconductor material layer is n 2 The thickness of the second semiconductor material layer is +.>
The technical effect achieved after the technical scheme is adopted is as follows: the DBR reflection unit is stacked alternately by the first semiconductor material layer and the second semiconductor material layer, and is used for reflectively filtering the whole light beam area and has a reflection wavelength lambda 0 Is a single color light of (a).
Further, the transmission filter unit is formed by alternately stacking a first semiconductor material layer and a second semiconductor material layer with different refractive indexes.
The technical effect achieved after the technical scheme is adopted is as follows: the transmission filtering unit filters the full-beam area through the first semiconductor material layer and the second semiconductor material layer; the multi-layer, all-beam, transmissive filter element improves the spectral width and quality of the output light.
Further, the transmission filter unit has a multi-layer structure, two adjacent layers have a period, and n is used b Representing the effective light refractive index of any two adjacent layers with a period thickness ofThe first semiconductor material layer has a light refractive index n 1 The first semiconductorThe thickness of the bulk material layer is->The light refractive index of the second semiconductor material layer is n 2 The thickness of the second semiconductor material layer is +.>
The technical effect achieved after the technical scheme is adopted is as follows: the transmission filter unit can pass through the laser with the wavelength lambda 0 Further ensuring the monochromaticity of the output light.
Further, the plurality of transmission filter units comprise a P-type transmission filter unit and an N-type transmission filter unit, and the P-type transmission filter unit and the N-type transmission filter unit are arranged in a staggered mode.
The technical effect achieved after the technical scheme is adopted is as follows: the laser emitted along the direction far away from the substrate or reflected by the DBR reflecting unit can play a role of optical pumping and realize the increase of light intensity and the enhancement of monochromaticity after passing through a plurality of laser gain units.
Further, among the plurality of laser gain units and the plurality of transmissive filter units, the P-type transmissive filter unit on the furthest side from the DBR reflection unit is a top transmissive filter layer as an optical output end.
The technical effect achieved after the technical scheme is adopted is as follows: the top transmission filter layer can ensure the monochromaticity of the output light, and the reflected light is subjected to repeated filtering after passing through the DBR reflection unit, the laser gain unit and the transmission filter unit, so that the monochromaticity of the output light is further improved.
Further, the high-power heightened multi-section transmission filtering vertical plane emitting laser also comprises a power supply, wherein the connection structure of the power supply and the DBR reflection unit and the transmission filtering unit comprises a direct structure, a parallel structure or a serial structure; the substrate is an n-type semiconductor or a p-type semiconductor;
wherein, the direct formula structure is: doping only the DBR reflecting unit and the top transmissive filter layer to form an n+ type semiconductor or a p+ type semiconductor; when the substrate is an n-type semiconductor, the DBR reflection unit is an n+ -type semiconductor, and the top transmissive filter layer is a p+ -type semiconductor; when the substrate is a p-type semiconductor, the DBR reflection unit is a p+ -type semiconductor, and the top transmissive filter layer is an n+ -type semiconductor; the n+ type semiconductor is connected with the negative electrode of the power supply, and the p+ type semiconductor is connected with the positive electrode of the power supply;
wherein, the parallel structure is: not only the DBR reflecting unit and the top transmissive filter layer are doped to form an n+ type semiconductor or a p+ type semiconductor, but also the rest of the transmissive filter unit intermediate the DBR reflecting unit and the top transmissive filter layer is alternately doped with a p+ type semiconductor and an n+ type semiconductor; when the substrate is an n-type semiconductor, the DBR reflection unit is an n+ -type semiconductor, and the top transmissive filter layer is a p+ -type semiconductor; when the substrate is a p-type semiconductor, the DBR reflection unit is a p+ -type semiconductor, and the top transmissive filter layer is an n+ -type semiconductor; all p+ type semiconductors are connected with the positive electrode of the power supply, and all n+ type semiconductors are connected with the negative electrode of the power supply;
wherein, the tandem structure is: not only the DBR reflecting unit and the top transmissive filter layer are doped to form an n+ type semiconductor or a p+ type semiconductor, but also the rest of the transmissive filter unit intermediate the DBR reflecting unit and the top transmissive filter layer is alternately doped with a p+ type semiconductor and an n+ type semiconductor; when the substrate is an n-type semiconductor, the DBR reflection unit is an n+ type semiconductor, the top transmission filter layer is a p+ type semiconductor, the top transmission filter layer is connected with the positive electrode of the power supply, and the DBR reflection unit is connected with the negative electrode of the power supply; when the substrate is a p-type semiconductor, the DBR reflection unit is a p+ -type semiconductor, and the top transmissive filter layer is an n+ -type semiconductor; the top transmission filter layer is connected with a power supply cathode, and the DBR reflection unit is connected with a power supply anode.
The technical effect achieved after the technical scheme is adopted is as follows: the laser gain unit and the transmission filter unit form a section, and the sections are mutually excited and pumped to improve the light efficiency and the monochromaticity; the P-type transmission filter unit and the N-type transmission filter unit are connected in parallel with the power supply, so that the excitation effect can be enough under the condition of low voltage; the DBR reflection unit, the laser gain unit and the transmission filter unit are connected in series, and then the current flowing through the DBR reflection unit, the laser gain unit and the transmission filter unit are the same in size; and moreover, each section is formed by the laser gain unit and the transmission filter unit, and the anode and the cathode of a power supply are not required to be connected independently, so that the processing is simple.
Further, in the case where the substrate is an n-type semiconductor and in the case where the substrate is a p-type semiconductor, the DBR reflection unit and the remaining transmissive filter units in the middle of the top transmissive filter layer are doped in opposite directions.
The technical effect achieved after the technical scheme is adopted is as follows: when the substrate is an n-type semiconductor or a p-type semiconductor, the rest of the transmission filter units and the laser gain units can be conducted to perform filtering and optical pumping effects, so that the serial structure and the parallel structure are realized.
In summary, the foregoing embodiments of the present application may have one or more of the following advantages or benefits:
i) The high-power heightened multi-section transmission filtering vertical plane emitting laser is different from two DBR high-reflectivity short cavity working modes of a traditional F-P laser cavity, adopts a light incidence type laser working mode, only one DBR reflecting unit is used for reflecting, and the rest is a laser gain unit and a transmission filtering unit. The laser gain units can emit laser independently after being electrified, and among the laser emitted in the direction away from the DBR reflecting unit, monochromatic light corresponding to the wavelength of the transmission filtering unit can pass through the transmission filtering unit and be output; among the laser beams emitted toward the DBR reflecting unit, monochromatic light corresponding to the wavelength of the DBR reflecting unit is reflected and then output after the filtering action of the transmission filtering units, so that the transmission filtering units and the DBR reflecting unit can select the laser beams with the specified wavelength, and the monochromaticity of the output light is better;
ii) each laser gain unit can be used as an optical pumping source of other laser gain units, and the laser gain units are mutually excited in a coherent mode, so that the luminous efficiency of the laser is improved, and the monochromaticity of light is improved;
iii) Compared with a short-cavity single-section single-mode working mode of an F-P laser cavity, the wavelength of output light of the high-power heightening multi-section transmission filtering vertical plane emitting laser is mainly determined by the transmission filtering unit instead of the cavity length of the laser resonant cavity, so that the laser gain unit has no strict limit on thickness, the thickness of an optical gain area can be increased to increase optical gain, and meanwhile, the number of sections can be increased to improve the light intensity of the output light;
iv) the DBR reflection unit, the laser gain unit and the transmission filter unit are vertically stacked on the substrate to output vertical light, so that the space on the substrate can be effectively utilized, and a plurality of sections of vertical laser gain units and transmission filter units can be arranged on the same substrate to realize multi-section high-gain high-power light power output;
v) compared with the existing edge-emitting distributed grating DFB laser, no grating is required, the transmission filter unit and the DBR reflection unit do not need secondary epitaxial growth, reflection enhancement of an emitting end and polishing and coating of an AR end are not required, and the process flow and cost are greatly simplified.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a high-power heightened multi-section transmission filtering vertical plane emitting laser according to an embodiment of the present invention.
Fig. 2 is an enlarged view of region I in fig. 1.
Fig. 3 is an enlarged view of region II in fig. 1.
Fig. 4 is a schematic circuit diagram of the high power and high power multiple section transmissive filtering vertical plane emitting laser of fig. 1.
FIG. 5 is a schematic diagram of another circuit configuration of the high power elevated multi-section transmission filtering vertical plane emitting laser of FIG. 1.
Fig. 6 is a schematic diagram of still another configuration of the high power elevated multi-section transmissive filtering vertical plane emitting laser of fig. 1.
Description of main reference numerals:
100 is a high-power heightened multi-section transmission filtering vertical plane emitting laser; 110 is a substrate; 120 is a laser gain unit; 130 is a transmission filter unit; 131 is the top transmissive filter layer; 140 is a DBR reflective element; 141 is a first layer of semiconductor material; 142 is a layer of a second semiconductor material; 150 is the positive electrode; 160 is a negative electrode.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-3, a multi-section gain transmission filtering vertical plane emitting laser provided by an embodiment of the present invention includes: a substrate 110; a DBR reflecting unit 140, the DBR reflecting unit 140 being provided on the surface of the substrate 110; the plurality of laser gain units 120 and the plurality of transmission filter units 130, the laser gain units 120 and the transmission filter units 130 are arranged on one side of the DBR reflection unit 140 far away from the substrate 110, the laser gain units 120 and the transmission filter units 130 are stacked in a staggered manner to form a multi-section structure, and the stacking arrangement direction of the laser gain units 120 and the transmission filter units 130 is vertical to the substrate 110; the laser gain units 120 emit laser beams after being energized, and the laser beams emitted in a direction away from the DBR reflecting units 140 are output after passing through the plurality of transmission filter units 130, and the laser beams emitted toward the DBR reflecting units 140 are reflected by the DBR reflecting units 140 and are output after passing through the plurality of transmission filter units 130.
In a specific embodiment, the plurality of transmission filter units 130 includes P-type transmission filter units and N-type transmission filter units, and the P-type transmission filter units and the N-type transmission filter units are staggered. Among the plurality of laser gain units 120 and the plurality of transmission filter units 130, the P-type transmission filter unit at the furthest side from the DBR reflection unit 140 is a top transmission filter layer 131 as an optical output end.
In this embodiment, the high-power and high-multiple-section transmissive filtering vertical plane emitting laser 100 is different from the two DBR high-reflectivity short cavity operation modes of the conventional F-P laser cavity, in which the present invention adopts the light incident laser operation mode, only one DBR reflection unit 140 is used for reflection, and the rest are the laser gain unit 120 and the transmissive filtering unit 130. Each laser gain unit 120 can emit laser after being electrified, for a path of direct transmission light, the propagation direction of the laser is far away from the top direction of the substrate 110, the light is filtered by the transmission filter unit 130 to transmit transmission light with a certain monochromaticity, the monochromaticity transmission laser is further propagated to the next laser gain unit 120, the next laser gain unit 120 is excited like an optical pumping source, and so on, the monochromaticity of the transmitted laser is better and better, and finally the transmitted laser is finally filtered by the top transmission filter layer 131 and then output; for the other path of detoured reflective laser, the first propagation direction of the laser is towards the substrate 110, so that the path of the light is lengthened, and the light is not only filtered by the transmission filter unit 130 for several times, but also strongly reflectively filtered by the DBR reflection unit 140 after being propagated for exciting a plurality of pumps of the semiconductor laser gain unit 120, so that the monochromaticity of the laser propagated by the path is better; finally, the light reflected by the two direct transmission and DBR reflection units 140 is converged at the light output end and emitted and output in the top direction away from the substrate through the top transmission filter layer 131.
Compared with a single-cavity single-section single-mode working mode of an F-P laser cavity, the wavelength of output light of the high-power heightened multi-section transmission filtering vertical plane emitting laser 100 is mainly determined by the transmission filtering unit 130 instead of the cavity length of the laser gain unit 120, so that the laser gain unit 120 has no strict thickness limitation, and the thickness of an optical gain area can be increased to increase the optical gain so as to improve the light intensity of the output light; the DBR reflection unit 140, the laser gain unit 120 and the transmission filter unit 130 are vertically stacked on the substrate 110 to output vertical light, so that space on the substrate 110 can be effectively utilized, and multiple groups of vertical laser gain units 120 and transmission filter units 130 can be arranged on the same substrate 110, thereby realizing multi-node high-gain high-power optical power output.
In addition, compared with a side-emitting distributed grating DFB laser, the side-emitting distributed grating DFB laser does not need to be provided with gratings, semiconductor materials do not need to be grown in a secondary epitaxial mode, reflection-increasing of an emitting end, polishing and coating of an AR end are not needed, and the process flow and cost are greatly simplified. The laser gain unit 120 and the transmission filter unit 130 are stacked in a staggered manner, so that phase shift caused by large errors caused by mechanical cutting is avoided.
Among the plurality of laser gain units 120 and the plurality of transmission filter units 130, the side connected to the DBR reflection unit 140 may be the laser gain unit 120 or the transmission filter unit 130. Preferably, since the DBR reflecting unit has reflective filtering effect, there is no need to add or select the transmission filtering unit 130 therein, and the laser gain unit 120 is directly connected to the DBR reflecting unit 140, thereby saving cost effectively.
The number of the laser gain units 120 and the transmission filter units 130 may be determined according to the requirements of the device application, and is not limited herein.
In one particular embodiment, the center operating wavelength of the output light of the high power elevated multisection transmission filtered vertical surface emitting laser 100 is λ 0 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the DBR reflection unit 140 has a multi-layer structure, two adjacent layers have a period with a period thickness ofAnd/or, each layer thickness of the DBR reflection unit 140 is +.>Wherein the method comprises the steps ofThe DBR reflection unit 140 is capable of reflecting the laser light having a wavelength λ 0 The returned monochromatic light is filtered again by the plurality of transmission filter units 130, and the monochromaticity of the output light is improved.
In a specific embodiment, the DBR reflecting unit 140 is formed by alternately stacking first and second semiconductor material layers 141 and 142 having different refractive indexes, and the first semiconductor material layer 141 has a light refractive index n 1 The first semiconductor material layer 141 has a thickness ofThe second semiconductor material layer 142 has a light refractive index n 2 The thickness of the second semiconductor material layer 142 is +.>Wherein the DBR reflecting unit 140 filters the full beam region by alternately stacking the first semiconductor material layer 141 and the second semiconductor material layer 142 with a reflection wavelength lambda 0 Is a single color light of (a).
In a specific embodiment, the transmission filter unit 130 is formed by alternately stacking the first semiconductor material layer 141 and the second semiconductor material layer 142 having different refractive indexes. The transmission filtering unit 130 filters the full beam area through the first semiconductor material layer 141 and the second semiconductor material layer 142, and has higher efficiency compared with the partial grating area filtering of the edge-emitting distributed grating DFB laser; the multi-layered transmission filter unit 130 improves the spectral width and quality of the output light.
In a specific embodiment, the transmission filter unit 130 has a multi-layer structure, and two adjacent layers have a period of n b Representing the effective light refractive index of any two adjacent layers with a period thickness ofThe first semiconductor material layer 141 has a light refractive index n 1 The thickness of the first semiconductor material layer 141 is +.>The second semiconductor material layer 142 has a light refractive index n 2 The thickness of the second semiconductor material layer 142 is +.>Wherein the transmission filter unit 130 is capable of passing the laser light with a wavelength lambda 0 Is used for ensuring the monochromaticity of the output light.
In a specific embodiment, the high-power heightened multi-section transmissive filtering vertical plane emitting laser 100 further includes a power supply, and the connection structure of the power supply and the DBR reflection unit 140, the transmissive filtering unit 130 includes a direct structure, a parallel structure, or a serial structure; the substrate 110 is an n-type semiconductor or a p-type semiconductor.
Wherein, referring to fig. 1, the direct structure is: doping only the DBR reflection unit 140 and the top transmissive filter layer 131 to form an n+ type semiconductor or a p+ type semiconductor; when the substrate 110 is an n-type semiconductor, the DBR reflection unit 140 is an n+ -type semiconductor, and the top transmissive filter layer 131 is a p+ -type semiconductor; when the substrate 110 is a p-type semiconductor, the DBR reflection unit 140 is a p+ -type semiconductor, and the top transmissive filter layer 131 is an n+ -type semiconductor; the n+ type semiconductor is connected to the power negative electrode 160, and the p+ type semiconductor is connected to the power positive electrode 150.
Wherein, referring to fig. 4, the parallel structure is: not only the DBR reflection unit 140 and the top transmissive filter layer 131 are doped to form an n+ -type semiconductor or a p+ -type semiconductor, but also the remaining transmissive filter unit 130 between the DBR reflection unit 140 and the top transmissive filter layer 131 is alternately doped with a p+ -type semiconductor and an n+ -type semiconductor; when the substrate 110 is an n-type semiconductor, the DBR reflection unit 140 is an n+ -type semiconductor, and the top transmissive filter layer 131 is a p+ -type semiconductor; when the substrate 110 is a p-type semiconductor, the DBR reflection unit 140 is a p+ -type semiconductor, and the top transmissive filter layer 131 is an n+ -type semiconductor; all p+ type semiconductors are connected to the power supply anode 150 and all n+ type semiconductors are connected to the power supply cathode 160.
Wherein, referring to fig. 5, the tandem structure is: not only the DBR reflection unit 140 and the top transmissive filter layer 131 are doped to form an n+ -type semiconductor or a p+ -type semiconductor, but also the remaining transmissive filter unit 130 between the DBR reflection unit 140 and the top transmissive filter layer 131 is alternately doped with a p+ -type semiconductor and an n+ -type semiconductor; when the substrate 110 is an n-type semiconductor, the DBR reflecting unit 140 is an n+ -type semiconductor, the top transmissive filter layer 131 is a p+ -type semiconductor, the top transmissive filter layer 131 is connected to the power supply anode 150, and the DBR reflecting unit 140 is connected to the power supply cathode 160; when the substrate 110 is a p-type semiconductor, the DBR reflection unit 140 is a p+ -type semiconductor, and the top transmissive filter layer 131 is an n+ -type semiconductor; the top transmissive filter layer 131 is connected to the power cathode 160, and the dbr reflecting unit 140 is connected to the power anode 150.
It should be noted that, the laser gain unit 120 and the transmission filter unit 130 form a section, and each section is mutually excited to improve the light efficiency; the P-type transmission filter unit and the N-type transmission filter unit are connected in parallel to the positive electrode 150 and the negative electrode 160 of the power source, respectively, and can be applied in a low voltage condition.
The P-type transmission filter unit and the N-type transmission filter unit are connected in a mode of connecting multiple sections such as P-N-P-N in series, and when current is conducted to two ends of the top transmission filter layer 131 and the DBR reflecting unit 140 of the series structure, the requirement of equal current application can be met, and each P-N section does not need to be connected with the positive electrode 150 and the negative electrode 160 of the power supply independently, so that the processing is simple.
Preferably, a circular opening is formed in the middle of the positive electrode 150 for outputting laser light.
In a specific embodiment, in the case where the substrate 110 is an n-type semiconductor and in the case where the substrate 110 is a p-type semiconductor, the doping manner of the rest of the transmissive filter units 130 between the DBR reflective unit 140 and the top transmissive filter layer 131 is opposite, so that the rest of the transmissive filter units 130 and the laser gain unit 120 can be turned on to perform filtering and optical pumping effects, thereby realizing a series structure and a parallel structure. For example, the transmissive filter unit 130 is doped p-n-p-n in the case of an n-type semiconductor for the substrate 110, and the transmissive filter unit 130 is doped n-p-n-p in the case of a p-type semiconductor for the substrate 110.
In another specific embodiment, referring to fig. 6, the positions of the top transmissive filter layer 131 and the DBR reflecting unit 140 may be interchanged on the basis of the direct structure, in which case the DBR reflecting unit 140 is located at a side of the laser gain unit 120 and the filtering unit 130 remote from the substrate 110. For a path of direct transmission light, the propagation direction of the light is the direction of the bottom surface of the substrate 110, the light is filtered by the transmission filter unit 130 to transmit the transmission light with a certain monochromaticity, the monochromaticity transmission laser is further propagated to the next laser gain unit 120, the next laser gain unit 120 is excited like an optical pumping source, so that the monochromaticity of the transmitted laser is better and better, and finally the transmitted laser is filtered by the top transmission filter layer 131 and then output; for the other path of detoured reflective laser, the first propagation direction is far away from the substrate 110, so that the path length of the path of the laser is longer, and the path of the laser is more subjected to the filtering of the transmission filtering unit 130 for several times and the strong reflective filtering of the DBR reflecting unit 140 besides the pumping excitation of the semiconductor laser gain unit 120, so that the monochromaticity of the laser propagated by the path is better; finally, the light reflected by the two direct transmission and DBR reflection units 140 is converged at the light output end and emitted and output to the bottom direction of the substrate 110 through the top transmission filter layer 131, which is also called back surface emission.
Preferably, a circular opening is formed between the anode 160 and the substrate 110 for outputting laser light.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. A high power, elevated multi-section transmission filtering vertical surface emitting laser, comprising:
a substrate;
a DBR reflection unit provided on the substrate surface;
the laser gain units and the transmission filter units are arranged on one side, far away from the substrate, of the DBR reflection unit, and are stacked in a staggered manner to form a multi-section structure, and the stacking direction of the laser gain units and the transmission filter units is perpendicular to the substrate;
the laser gain units emit laser after being electrified, the laser propagating along the direction far away from the DBR reflecting units is output after passing through the transmission filtering units, and the laser propagating towards the DBR reflecting units is reflected and filtered by the DBR reflecting units and is output after passing through the transmission filtering units.
2. The high power up-conversion multiple section transmission filter vertical surface emitting laser of claim 1, wherein the output light of the high power up-conversion multiple section transmission filter vertical surface emitting laser has a center operating wavelength λ 0 ；
Wherein the DBR reflection unit has a multi-layer structure, two adjacent layers have a period, n represents the effective light refractive index of any two adjacent layers, and the period has a thickness ofAnd/or, each layer thickness of the DBR reflection unit is +.>
3. The high power, high gain, transmissive and filtered vertical plane emitting laser of claim 2, wherein said DBR reflective element is formed of alternating layers of first and second semiconductor materials having different refractive indices, said first semiconductor material layer having a light refractive index n 1 The thickness of the first semiconductor material layer isThe light refractive index of the second semiconductor material layer is n 2 The thickness of the second semiconductor material layer is +.>
4. A high power, high gain, multiple section transmission filtering vertical surface emitting laser as claimed in claim 2 wherein said transmission filtering unit is formed by alternating layers of first and second semiconductor materials having different refractive indices.
5. The high power up-conversion multi-section transmission filter vertical plane emitting laser of claim 4 wherein said transmission filter unit is a multi-layer structure, adjacent two layers are a period, n is used b Representing the effective light refractive index of any two adjacent layers with a period thickness ofThe first semiconductor material layer has a light refractive index n 1 The thickness of the first semiconductor material layer is +.>The light refractive index of the second semiconductor material layer is n 2 The thickness of the second semiconductor material layer is +.>
6. A high power up-conversion multi-section transmission filter vertical plane emission laser according to any one of claims 1-6, wherein a plurality of said transmission filter units comprises a P-type transmission filter unit and an N-type transmission filter unit, said P-type transmission filter unit and said N-type transmission filter unit being staggered.
7. The high power up-conversion multi-section transmission filter vertical plane emission laser according to claim 6, wherein among the plurality of laser gain units and the plurality of transmission filter units, the P-type transmission filter unit on the furthest side from the DBR reflection unit is a top transmission filter layer as a light output end.
8. The high power up multi-section transmission filter vertical surface emitting laser of claim 7, further comprising a power supply, wherein the connection structure of the power supply and the DBR reflection unit, the transmission filter unit comprises a direct structure, a parallel structure, or a series structure; the substrate is an n-type semiconductor or a p-type semiconductor;
wherein, the direct formula structure is: doping only the DBR reflecting unit and the top transmissive filter layer to form an n+ type semiconductor or a p+ type semiconductor; when the substrate is an n-type semiconductor, the DBR reflection unit is an n+ -type semiconductor, and the top transmissive filter layer is a p+ -type semiconductor; when the substrate is a p-type semiconductor, the DBR reflection unit is a p+ -type semiconductor, and the top transmissive filter layer is an n+ -type semiconductor; the n+ type semiconductor is connected with the negative electrode of the power supply, and the p+ type semiconductor is connected with the positive electrode of the power supply;
wherein, the parallel structure is: not only the DBR reflecting unit and the top transmissive filter layer are doped to form an n+ type semiconductor or a p+ type semiconductor, but also the rest of the transmissive filter unit intermediate the DBR reflecting unit and the top transmissive filter layer is alternately doped with a p+ type semiconductor and an n+ type semiconductor; when the substrate is an n-type semiconductor, the DBR reflection unit is an n+ -type semiconductor, and the top transmissive filter layer is a p+ -type semiconductor; when the substrate is a p-type semiconductor, the DBR reflection unit is a p+ -type semiconductor, and the top transmissive filter layer is an n+ -type semiconductor; all p+ type semiconductors are connected with the positive electrode of the power supply, and all n+ type semiconductors are connected with the negative electrode of the power supply;
wherein, the tandem structure is: not only the DBR reflecting unit and the top transmissive filter layer are doped to form an n+ type semiconductor or a p+ type semiconductor, but also the rest of the transmissive filter unit intermediate the DBR reflecting unit and the top transmissive filter layer is alternately doped with a p+ type semiconductor and an n+ type semiconductor; when the substrate is an n-type semiconductor, the DBR reflection unit is an n+ type semiconductor, the top transmission filter layer is a p+ type semiconductor, the top transmission filter layer is connected with the positive electrode of the power supply, and the DBR reflection unit is connected with the negative electrode of the power supply; when the substrate is a p-type semiconductor, the DBR reflection unit is a p+ -type semiconductor, and the top transmissive filter layer is an n+ -type semiconductor; the top transmission filter layer is connected with a power supply cathode, and the DBR reflection unit is connected with a power supply anode.
9. A high power, high gain, multiple section transmissive filter vertical plane emitting laser according to claim 8 wherein the DBR reflective element and the remaining transmissive filter element intermediate the top transmissive filter layer are doped in opposite fashion in the case of an n-type semiconductor for the substrate and in the case of a p-type semiconductor for the substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211079319.9A CN117691462A (en) | 2022-09-05 | 2022-09-05 | High-power heightening multisection transmission filtering vertical plane emitting laser |
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| CN202211079319.9A CN117691462A (en) | 2022-09-05 | 2022-09-05 | High-power heightening multisection transmission filtering vertical plane emitting laser |
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