CN117687071A

CN117687071A - Detector and emission imaging device

Info

Publication number: CN117687071A
Application number: CN202311399033.3A
Authority: CN
Inventors: 许剑锋; 于昕; 顾建森; 任秋实; 辛胜昌; 赵慧萍; 朱志良; 杨刚; 樊忠良; 李明清
Original assignee: Peking University Shenzhen Graduate School; Shenzhen Huazhong University of Science and Technology Research Institute
Current assignee: Peking University Shenzhen Graduate School; Shenzhen Huazhong University of Science and Technology Research Institute
Priority date: 2023-10-25
Filing date: 2023-10-25
Publication date: 2024-03-12

Abstract

The invention provides a detector and an emission imaging device. The detector comprises a plurality of scintillation crystals, a crystal array is formed by the scintillation crystals in a transverse plane, the crystal array is provided with a first end and a second end, a plurality of first photoelectric sensors are coupled to the first end, a plurality of second photoelectric sensors are coupled to the second end, and each scintillation crystal is provided with a first face corresponding to the first end and a second face corresponding to the second end. The detector provided by the invention realizes DOI calculation of the scintillation crystals through the dislocation arrangement of the first photoelectric sensor and the second photoelectric sensor, and as each scintillation crystal is at least coupled with one photoelectric sensor, the detection sensitivity of the detector to gamma photons is similar to that of a conventional detector.

Description

Detector and emission imaging device

Technical Field

The invention relates to the technical field of emission imaging, in particular to a detector and emission imaging equipment.

Background

With the increasing level of science and technology, there are increasing means by which people deal with complex conditions. The computed tomography technology is a major breakthrough in the field of nuclear medicine imaging equipment. Emission computed tomography (Emission Computed Tomography, ECT) is also known as radionuclide computed tomography, and is a imaging technique capable of displaying distribution and stereoscopic images of radionuclides at various levels in the human body. ECT can detect metabolic and blood flow states of an organ and is a dynamic, functional imaging technique. Currently, positron emission tomography (Positron Emission Computed Tomography, hereinafter referred to as PET) is a relatively popular ECT technique.

In the prior art, a double-ended method is generally used to obtain reaction depth information (Depth Of Interaction, hereinafter referred to as DOI). In the double-end method, photoelectric sensors are arranged at two ends of each scintillation crystal in the detector, when a certain scintillation crystal detects gamma photons, generated visible light can be transmitted to two photoelectric sensors coupled with the two ends of the scintillation crystal, and according to the difference of positions of the scintillation crystal, the ratio of the visible light detected by the two photoelectric sensors is different, wherein more visible light can be detected by the photoelectric sensors which are closer to the position of the scintillation crystal, where the gamma photons are detected, so that DOI can be calculated.

However, when DOI is obtained by the double-ended method, the photoelectric sensors are required to be coupled to both ends of the scintillation crystal, and the number of the photoelectric sensors used in the whole equipment is large, so that the cost of the whole equipment is high, more photoelectric sensors mean more circuits, the whole system is very complex, and the requirements on the processor module are also very high.

Disclosure of Invention

In order to at least partially solve the problems of the prior art, the present invention provides a detector. The detector comprises a plurality of scintillation crystals, a crystal array is formed by the scintillation crystals in a transverse plane, the crystal array is provided with a first end and a second end, a plurality of first photoelectric sensors are coupled to the first end, a plurality of second photoelectric sensors are coupled to the second end, and each scintillation crystal is provided with a first face corresponding to the first end and a second face corresponding to the second end.

According to the detector provided by the invention, DOI calculation of the scintillation crystals is realized through the arrangement of the first photoelectric sensor at the first end of the crystal array and the second photoelectric sensor at the second end, and the dislocation arrangement of the first photoelectric sensor and the second photoelectric sensor, and as each scintillation crystal is at least coupled with one first photoelectric sensor or one second photoelectric sensor, the detection sensitivity of the coordination of the crystal array and the photoelectric sensors to gamma photons is similar to that of a conventional detector. Compared with the existing detector, the double-end method that photoelectric sensors are arranged at two ends of each scintillation crystal is used for calculating DOI, the number of the photoelectric sensors is smaller, the cost of the whole device is lower, the complexity of the system of the whole device is greatly reduced, meanwhile, the detection sensitivity of the detector to gamma photons is similar to that of a conventional structure, that is, on the basis of ensuring that the detection sensitivity meets the requirement, DOI calculation of the scintillation crystals is realized by a lower cost, simpler structure and system.

Illustratively, the plurality of first faces are on the same plane.

Illustratively, the plurality of second faces are on the same plane.

The plurality of first facets may include a first coupling facet to which the first photosensor is coupled and a first decoupling facet to which the first photosensor is not coupled, the first coupling facet and the first decoupling facet being alternately disposed.

The plurality of first photosensors forms a first photosensor layer having a first remote face away from the scintillation crystal, the first uncoupled face being in the same plane as the first remote face.

The plurality of second facets includes a second coupling facet to which the second photosensor is coupled, and a second non-coupling facet to which the second photosensor is not coupled, the second coupling facet and the second non-coupling facet being alternately disposed.

The plurality of second photosensors forms a second photosensor layer having a second remote face remote from the scintillation crystal, the second uncoupled face being in the same plane as the second remote face.

Illustratively, adjacent scintillation crystals are connected by an adhesive layer.

Illustratively, the adhesive layer is configured to: when the visible light is incident on the adhesive layer, at least part of the visible light is transmitted through the adhesive layer, and at least part of the visible light is reflected by the adhesive layer and returns into the scintillator crystal.

According to another aspect of the present invention, there is provided an emissive imaging device comprising a processor module and any one of the detectors as described above, a plurality of first photosensors and a plurality of second photosensors being respectively electrically connected to the processor module.

In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description section. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.

Advantages and features of the invention are described in detail below with reference to the accompanying drawings.

Drawings

The following drawings are included to provide an understanding of the invention and are incorporated in and constitute a part of this specification. Embodiments of the present invention and their description are shown in the drawings to explain the principles of the invention. In the drawings of which there are shown,

fig. 1 is a schematic diagram of an emissive imaging device according to an exemplary embodiment of the present invention;

FIG. 2 is a partial cross-sectional view of a detector according to an exemplary embodiment of the invention;

FIG. 3 is a partial top view of a detector according to an exemplary embodiment of the invention, wherein the viewing angle is from a first end of the crystal array toward the detector;

FIG. 4 is a partial bottom view of a detector according to an exemplary embodiment of the invention, wherein the view angle is from a second end of the crystal array toward the detector; and

fig. 5 is a partial cross-sectional view of a detector according to an exemplary embodiment of the invention.

Wherein the above figures include the following reference numerals:

10. a detector; 100. a crystal array; 110. a first end; 120. a second end; 200. a scintillation crystal; 210. a first face; 211. a first coupling surface; 212. a first uncoupled surface; 220. a second face; 221. a second coupling surface; 222. a second uncoupled surface; 300. a first light sensor layer; 310. a first photosensor; 320. a first remote surface; 400. a second light sensor layer; 410. a second photosensor; 420. a second remote surface; 500. an adhesive layer; 20. an emission imaging device; 30. a detection ring; 40. and a processor module.

Detailed Description

In the following description, numerous details are provided to provide a thorough understanding of the invention. However, it will be understood by those skilled in the art that the following description illustrates preferred embodiments of the invention by way of example only and that the invention may be practiced without one or more of these details. Furthermore, some technical features that are known in the art have not been described in detail in order to avoid obscuring the invention.

According to one aspect of the invention, a detector is provided. Referring to fig. 1 and 2, the detector 10 may include a plurality of scintillation crystals 200, the scintillation crystals 200 referring to crystals capable of converting energy of high-energy particles into light energy upon impact of gamma photons. The scintillation crystal 200 may be lutetium yttrium silicate scintillation crystal (LYSO crystal), bismuth germanate scintillation crystal (BGO crystal), cerium doped lutetium silicate scintillation crystal (LSO crystal), gadolinium silicate scintillation crystal (GSO crystal), sodium iodide scintillation crystal (NaI crystal), or crystals of various other materials. The plurality of scintillation crystals 200 can form the crystal array 100 in a transverse plane, and the formed crystal array 100 can have various shapes such as rectangular, circular, or trapezoidal overall. The crystal array 100 may have a first end 110 and a second end 120, the first end 110 may have a plurality of first photosensors 310 coupled thereto, and the second end 120 may have a plurality of second photosensors 410 coupled thereto. The first and second photosensors 310, 410 may each be of various types, such as photomultiplier tubes (PMTs), silicon photomultipliers (sipms), etc., that may be present or in the future. Each scintillation crystal 200 can have a first face 210 corresponding to the first end 110 and a second face 220 corresponding to the second end 120, the plurality of first faces 210 can comprise the first end 110, and the plurality of second faces 220 can comprise the second end 120.

The detector 10 provided by the present invention may be applied to any suitable device including, but not limited to, an emission imaging device, and thus, according to another aspect of the present invention, an emission imaging device 20 is provided. The emission imaging device 20 may include a processor module 40 and any of the detectors 10 described further below, and the plurality of first photosensors 310 and the plurality of second photosensors 410 may each be electrically connected to the processor module 40. The emission imaging device 20 may include a detection ring 30. Fig. 1 shows an enlarged view of the probe ring 30. The detector ring 30 may have a plurality of any of the detectors 10 arranged thereon as described below. Typically, the plurality of detectors 10 forming one detector ring 30 have substantially the same structure. The present application does not exclude embodiments in which different probes form one probe ring 30. A plurality of detection rings 30 may be closely arranged in a direction perpendicular to the paper surface. The detection space enclosed by these detection rings 30 can accommodate the object to be measured. Typically, the detection space may be substantially cylindrical. Of course, embodiments in which the detection space has other shapes are not excluded from the present application. The plurality of detectors 10 may be arranged in pairs, the pairs of detectors 10 being functional under PET imaging. In such an emission imaging device 20, since the detector 10 can calculate DOI with high accuracy, the overall device detection result has higher accuracy.

Referring to fig. 2, 3 and 4, a first photosensor 310 may be coupled to a first face 210 of one of any two adjacent scintillation crystals 200, and a second photosensor 410 may be coupled to a second face 220 of the other scintillation crystal, so that the first photosensor 310 and the second photosensor 410 may be disposed in a staggered manner. The scintillation crystal 200 may be generally in the form of a quadrangular prism, such that the scintillation crystal 200 is adjacent to four scintillation crystals 200, and for example, a first photosensor 310 is coupled to a first face 210 of the scintillation crystal 200 located in the center, and a second photosensor 410 is coupled to a second face 220 of four adjacent scintillation crystals 200, where the first photosensor 310 and the four second photosensors 410 are disposed in a staggered manner, and the staggered arrangement refers to that when the photosensors are projected onto a transverse plane, the projections of the photosensors do not have an overlapping portion.

Taking the scintillation crystal 200 with the first photosensor 310 coupled to the first surface 210 as an example, the scintillation crystal 200 is named as a scintillation crystal a, referring to fig. 2, 3 and 4 specifically, four scintillation crystals 200 adjacent to the scintillation crystal a are a scintillation crystal B, a scintillation crystal C, a scintillation crystal D and a scintillation crystal E respectively, the second surface 220 of the scintillation crystal B is coupled with the second photosensor 410, the second surface 220 of the scintillation crystal C is coupled with the second photosensor 410, the second surface 220 of the scintillation crystal D is coupled with the second photosensor 410, and the second surface 220 of the scintillation crystal E is coupled with the second photosensor 410. When the scintillation crystal a is impacted by gamma photons, visible light may be generated, a majority of which may be detected by a first photosensor 310 coupled to the first face 210 of the scintillation crystal a, and from the position of this first photosensor 310, the position of the scintillation crystal a impacted by gamma photons may be determined. The scintillator crystal a may be connected to the adjacent scintillator crystal 200 through the adhesive layer 500, and a part of visible light generated by the scintillator crystal a may transmit the adhesive layer 500, and the adhesive layer 500 will be described in detail below. Of the visible light generated by the scintillation crystal a, the visible light transmitted through the adhesive layer 500 may be detected by the second photosensor 410 coupled to one or more of the scintillation crystal B, the scintillation crystal C, the scintillation crystal D, and the scintillation crystal E, and DOI information of the scintillation crystal a may be calculated by comparing the sum of the visible light detected by the one or more second photosensors 410 with the visible light detected by the first photosensor 310 coupled to the scintillation crystal a through collimation calibration, neural network training, and the like. Of course, taking the scintillation crystal a with the first photosensor 310 coupled to the first surface 210 as an example, the scintillation crystal B with the second photosensor 410 coupled to the second surface 220 is similar to the scintillation crystal a when the scintillation crystal B is impacted by gamma photons, and will not be described herein.

Illustratively, the first face 210 of the scintillation crystal 200 having the first photosensor 310 coupled thereto is free of the second photosensor 410 coupled to the second face 220 of the scintillation crystal 200, and similarly, the second photosensor 410 coupled to the scintillation crystal 200 is free of the first photosensor 310 coupled to the first face 210 of the scintillation crystal 200, see in particular fig. 3 and 4, so that a minimum number of photosensors can be used while ensuring sufficient sensitivity, and at the same time DOI calculation of the scintillation crystal 200 can be achieved.

According to the detector 10 provided by the invention, DOI calculation of the scintillation crystals 200 is realized through the arrangement that the first end 110 of the crystal array 100 is provided with the first photoelectric sensor 310, the second end 120 is provided with the second photoelectric sensor 410 and the first photoelectric sensor 310 and the second photoelectric sensor 410 are arranged in a staggered manner, and as each scintillation crystal 200 is at least coupled with one first photoelectric sensor 310 or one second photoelectric sensor 410, the gamma photon detection sensitivity of the cooperation of the crystal array 100 and the photoelectric sensors is similar to that of a conventional detector. Compared with the existing detector 10 in which the photoelectric sensors are arranged at two ends of each scintillation crystal 200, the detector 10 calculates DOI by a double-end method, the number of the photoelectric sensors is smaller, the cost of the whole device is lower, the complexity of the system of the whole device is greatly reduced, and meanwhile, the detection sensitivity of the detector 10 to gamma photons is similar to that of a conventional structure, namely, on the basis of ensuring that the detection sensitivity meets the requirement, the DOI calculation of the scintillation crystals 200 is realized by a lower cost, simpler structure and system.

In one embodiment of the invention, referring to fig. 2, the plurality of first faces 210 may be on the same plane. The first end 110 of the crystal array 100 formed by the plurality of scintillation crystals 200 having the plurality of first faces 210 on the same plane may be a plane, and the crystal array 100 may be more regular, and the structure of the detector 10 may be simpler and easier to manufacture.

In one embodiment of the invention, referring to fig. 2, the plurality of second faces 220 may be on the same plane. The second end 120 of the crystal array 100 formed by the plurality of scintillation crystals 200 having the plurality of second faces 220 in the same plane may be a plane, and the crystal array 100 may be more regular, and the structure of the detector 10 may be simpler and easier to manufacture.

In one embodiment of the present invention, referring to fig. 2 and 5, the plurality of first facets 210 may include a first coupling facet 211 to which the first photosensor 310 is coupled, and a first non-coupling facet 212 to which the first photosensor 310 is not coupled. The first coupling surfaces 211 and the first uncoupling surfaces 212 may be alternately arranged, that is, the first surface 210 of the scintillation crystal 200 coupled with the second photosensor 410 may not be coupled with the first photosensor 310 on the basis of the offset arrangement of the first photosensor 310 and the second photosensor 410. With this arrangement, a minimum number of photosensors can be used while ensuring sufficient sensitivity, while DOI calculation of the scintillator crystal 200 can be achieved.

The first coupling surface 211 and the first non-coupling surface 212 may not be on the same plane. Referring to fig. 5, a plurality of first photosensors 310 may form a first photosensor layer 300, the first photosensor layer 300 may have a first remote face 320 remote from the scintillation crystal 200, and the first uncoupled face 212 may be planar with the first remote face 320. The first uncoupled surface 212 is on the same plane as the outermost end surface of the first photosensor layer 300, such a crystal array 100 is connected with the detector 10 formed by such a first photosensor layer 300, the uniformity of the overall structure is better, the outer ring of the overall structure has no gap, and the overall structure can be more stable.

In one embodiment of the present invention, referring to fig. 2 and 5, the plurality of second faces 220 may include a second coupling face 221 to which the second photo-sensor 410 is coupled, and a second non-coupling face 222 to which the second photo-sensor 410 is not coupled. The second coupling surfaces 221 and the second non-coupling surfaces 222 may be alternately arranged, that is, the second surface 220 of the scintillation crystal 200 coupled with the first photosensor 310 may not be coupled with the second photosensor 410 on the basis that the first photosensor 310 and the second photosensor 410 are disposed in a staggered manner. With this arrangement, a minimum number of photosensors can be used while ensuring sufficient sensitivity, while DOI calculation of the scintillator crystal 200 can be achieved.

The second coupling surface 221 and the second non-coupling surface 222 may not be on the same plane. Referring specifically to fig. 5, a plurality of second photosensors 410 may form a second photosensor layer 400, the second photosensor layer 400 may have a second remote surface 420 remote from the scintillation crystal 200, and the second uncoupled surface 222 may be planar with the second remote surface 420. The second uncoupled surface 222 is in the same plane as the outermost end surface of the second photosensor layer 400, such a crystal array 100 is connected with the detector 10 formed by such a second photosensor layer 400, the uniformity of the overall structure is better, the outer ring of the overall structure has no gap, and the overall structure can be more stable.

In one embodiment of the present invention, referring to fig. 2, 3, 4, and 5, adjacent scintillation crystals 200 can be connected by an adhesive layer 500. The scintillator crystal 200 is connected by the adhesive layer 500, and thus the crystal array 100 is formed, and the detector 10 is stable in structure and easy to produce and process.

The adhesive layer 500 may be configured to: when visible light is incident on the adhesive layer 500, at least part of the visible light can transmit the adhesive layer 500, and at least part of the visible light can be reflected by the adhesive layer 500. Visible light may be generated within the scintillation crystal 200 and incident on the adhesive layer 500, at least a portion of the visible light may be transmitted through the adhesive layer 500, and at least a portion of the visible light may be reflected at the adhesive layer 500 and back into the scintillation crystal 200. The adhesive layer 500 may be an adhesive formed by mixing barium sulfate and optical glue, and when the generated visible light reaches the position of the adhesive layer 500 by different proportions of the barium sulfate and the optical glue in the adhesive and different positions of the gamma photons, the proportion between the reflected part and the transmitted part of the generated visible light is different, but no matter how much visible light is reflected and how much visible light is transmitted in the whole generated visible light, at least part of the whole generated visible light should be reflected at the position of the adhesive layer 500 and finally detected by the first photoelectric sensor 310 or the second photoelectric sensor 410 coupled with the scintillator crystal 200; at least a portion of the total visible light generated should also be transmitted at the adhesive layer 500 and ultimately detected by the first photosensor 310 or the second photosensor 410 to which the scintillation crystal 200 adjacent to the scintillation crystal 200 is coupled. Taking the scintillation crystal a, the scintillation crystal B, the scintillation crystal C, the scintillation crystal D and the scintillation crystal E shown in fig. 2, 3 and 4 as an example, gamma photons strike the scintillation crystal a and generate visible light, and when the visible light reaches the adhesive layer 500 around the scintillation crystal a, part of the visible light is reflected at the adhesive layer 500 and is finally detected by the first photosensor 310 coupled with the scintillation crystal a; part of the visible light is transmitted at the adhesive layer 500, reaches the inside of one or more of the scintillation crystal B, the scintillation crystal C, the scintillation crystal D, and the scintillation crystal E, and is finally detected by the second photosensor 410 coupled to one or more of the scintillation crystal B, the scintillation crystal C, the scintillation crystal D, and the scintillation crystal E.

It should be noted that the reflection and transmission of visible light at the adhesive layer 500 are defined by a state where the visible light starts to contact the adhesive layer 500 and leaves the adhesive layer 500, and the state where the visible light is at the two positions, the visible light can be reflected and transmitted within the adhesive layer 500 any number of times. Comparing the start point of the visible light beginning to contact the adhesive layer 500 with the end point of the visible light leaving the adhesive layer 500, if the visible light is still within the scintillation crystal 200 impacted by gamma photons after leaving the adhesive layer 500, it is considered that the visible light is reflected at the adhesive layer 500; visible light is considered to be transmitted at the adhesive layer 500 if it leaves the adhesive layer 500 and reaches the adjacent scintillator crystal 200 of the gamma photon-impinged scintillator crystal 200.

The detector 10 designed in this way can ensure that the photoelectric sensor coupled with the scintillation crystal 200 impacted by gamma photons can detect the visible light because at least part of the visible light is reflected when the visible light reaches the adhesive layer 500, so as to determine the position of the scintillation crystal 200 where the gamma photons react; moreover, as at least part of the visible light is transmitted, the photoelectric sensor coupled with the adjacent scintillation crystal 200 of the scintillation crystal 200 which is impacted by gamma photons can be used for detecting part of the visible light, and further DOI calculation of the scintillation crystal 200 which is impacted by gamma photons can be realized.

In the description of the present invention, it should be understood that the azimuth or positional relationships indicated by the azimuth terms such as "front", "rear", "upper", "lower", "left", "right", "transverse", "vertical", "horizontal", and "top", "bottom", etc., are generally based on the azimuth or positional relationships shown in the drawings, merely for convenience of describing the present invention and simplifying the description, and these azimuth terms do not indicate and imply that the apparatus or elements referred to must have a specific azimuth or be constructed and operated in a specific azimuth, without limiting the scope of protection of the present invention; the orientation terms "inner" and "outer" refer to the inner and outer relative to the outline of the components themselves.

For ease of description, regional relative terms, such as "above … …," "above … …," "upper surface at … …," "above," and the like, may be used herein to describe regional positional relationships of one or more components or features to other components or features illustrated in the figures. It will be understood that the relative terms of regions include not only the orientation of the components illustrated in the figures, but also different orientations in use or operation. For example, if the element in the figures is turned over entirely, elements "over" or "on" other elements or features would then be included in cases where the element is "under" or "beneath" the other elements or features. Thus, the exemplary term "above … …" may include both orientations of "above … …" and "below … …". Moreover, these components or features may also be positioned at other different angles (e.g., rotated 90 degrees or other angles), and all such cases are intended to be encompassed herein.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present invention. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, components, assemblies, and/or combinations thereof.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein.

The present invention has been illustrated by the above-described embodiments, but it should be understood that the above-described embodiments are for purposes of illustration and description only and are not intended to limit the invention to the embodiments described. In addition, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications are possible in light of the teachings of the invention, which variations and modifications are within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. A detector comprising a plurality of scintillation crystals, a plurality of the scintillation crystals form a crystal array in a transverse plane, the crystal array has a first end and a second end, a plurality of first photosensors are coupled to the first end, a plurality of second photosensors are coupled to the second end, each of the scintillation crystals has a first face corresponding to the first end and a second face corresponding to the second end, and the detector is characterized in that the first face of any two adjacent scintillation crystals is coupled with the first photosensors, and the second face of the other scintillation crystals is coupled with the second photosensors, so that the first photosensors and the second photosensors are arranged in a staggered manner.

2. The detector of claim 1, wherein a plurality of said first faces are on the same plane.

3. The detector of claim 1, wherein a plurality of said second faces are on the same plane.

4. The detector of claim 1, wherein the plurality of first facets includes a first coupling facet to which the first photosensor is coupled and a first uncoupling facet to which the first photosensor is uncoupled, the first coupling facet and the first uncoupling facet being alternately disposed.

5. The detector of claim 4, wherein a plurality of the first photosensors form a first photosensor layer having a first remote face remote from the scintillation crystal, the first uncoupled face being in the same plane as the first remote face.

6. The detector of claim 1, wherein the plurality of second facets includes a second coupling facet to which the second photosensor is coupled and a second uncoupling facet to which the second photosensor is uncoupled, the second coupling facet and the second uncoupling facet being alternately disposed.

7. The detector of claim 6, wherein a plurality of the second photosensors form a second photosensor layer having a second remote face remote from the scintillation crystal, the second uncoupled face being in the same plane as the second remote face.

8. The detector of claim 1, wherein adjacent ones of the scintillation crystals are connected by an adhesive layer.

9. The probe of claim 8, wherein the adhesive layer is configured to: when visible light is incident on the adhesive layer, at least part of the visible light is transmitted through the adhesive layer, and at least part of the visible light is reflected by the adhesive layer.

10. An emission imaging device comprising a processor module and the detector of any of claims 1-9, a plurality of the first photosensors and a plurality of the second photosensors each electrically connected to the processor module.