CN117686872A - Reliability evaluation method and system for silicon carbide MOS tube - Google Patents
Reliability evaluation method and system for silicon carbide MOS tube Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 225
- 238000011156 evaluation Methods 0.000 title claims abstract description 15
- 238000012360 testing method Methods 0.000 claims abstract description 158
- 238000010438 heat treatment Methods 0.000 claims abstract description 45
- 230000007613 environmental effect Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 3
- BULVZWIRKLYCBC-UHFFFAOYSA-N phorate Chemical compound CCOP(=S)(OCC)SCSCC BULVZWIRKLYCBC-UHFFFAOYSA-N 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 158
- 230000035882 stress Effects 0.000 description 40
- 239000000463 material Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000032798 delamination Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention discloses a reliability evaluation method and a reliability evaluation system for a silicon carbide MOS tube, which relate to the field of silicon carbide MOS tubes, wherein the evaluation method comprises the following steps: extracting a plurality of silicon carbide MOS tubes as test samples; setting environmental data when the silicon carbide MOS tube is in an optimal working state; calculating reliability coefficientsf 1 Reliability coefficientf 2 And reliability coefficientf 3 The method comprises the steps of carrying out a first treatment on the surface of the Calculating the reliability coefficient of the silicon carbide MOS tube produced by the batch under the environment of wide temperature fluctuationPAccording to the reliability coefficientPThe reliability of the silicon carbide MOS tube produced by the batch is evaluated. The evaluation system includes: the device comprises a test box, a heating module and a refrigerating module which are arranged in the test box, a water pump and a water tank which are connected with the test box through pipelines, a corrosive gas release pump, a corrosive gas storage tank and a pressure actuator. The reliability coefficient of each state is calculated based on the change condition of the performance fluctuation parameter, and the reliability of the whole silicon carbide MOS tube is comprehensively evaluated through the reliability coefficient of each state.
Description
Technical Field
The invention relates to the field of silicon carbide MOS (metal oxide semiconductor) tubes, in particular to a reliability evaluation method and a reliability evaluation system for a silicon carbide MOS tube.
Background
Silicon carbide (SiC) MOS transistors are field effect transistors (MOSFETs) based on silicon carbide materials, which have many unique characteristics and advantages and are therefore widely used in a variety of fields.
The silicon carbide MOS tube has higher working temperature capability. Compared with the traditional silicon material, the silicon carbide material has higher melting point and better thermal stability, and can stably work for a long time in a high-temperature environment. The silicon carbide MOS tube is widely applied to high-temperature electronic equipment, such as the fields of automobile electronics, aerospace, military equipment and the like.
The silicon carbide MOS tube has lower power consumption and higher switching speed. Because the silicon carbide material has excellent conductive property, the silicon carbide MOS tube has smaller current loss in the on and off states. Meanwhile, the carrier mobility of the silicon carbide material is also higher, so that the MOS tube has higher switching speed. This makes silicon carbide MOS transistors excellent in high frequency electronics applications such as wireless communications, power amplifiers, etc.
The surface state density per unit area of SiC is higher than Si, resulting in higher densities of Si-and C-dangling bonds, defects in the gate oxide near the interface may occur within the band gap and become traps for electrons. And SiC materials themselves have specific defect structures, anisotropies, mechanical properties, and thermal properties. Based on the above, when the silicon carbide MOS tube is used in an environment with greatly fluctuating temperature, the performance of the silicon carbide MOS tube can also fluctuate along with the change of the temperature by combining with the self-heating state of the silicon carbide MOS tube.
Therefore, the reliability of the finished silicon carbide MOS tube product under the condition of temperature fluctuation needs to be reasonably evaluated.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a reliability evaluation method and a reliability evaluation system for a silicon carbide MOS tube, which are used for researching the reliability of the silicon carbide MOS tube from the angles of temperature change and self-heating of the working environment of the silicon carbide MOS tube.
The aim of the invention is realized by the following technical scheme:
a reliability evaluation method of a silicon carbide MOS tube comprises the following steps:
s1: extracting a plurality of silicon carbide MOS tubes from the silicon carbide MOS tubes produced in the same batch in a random sampling mode to serve as test samples;
s2: establishing a reliability test system of the silicon carbide MOS tube, and setting environmental data including environmental temperature when the silicon carbide MOS tube is in an optimal working statetHumidity ofsConcentration of corrosive gas environmentqAnd external stressF；
S3: taking a silicon carbide MOS tube in a test sample, testing the reliability of the silicon carbide MOS tube in a low-temperature environment, and calculating a reliability coefficientf 1 The low temperature environment is in the temperature range oft-t min Is used in the environment of (1),t min the temperature is the lowest value of the environment temperature when the silicon carbide MOS tube is used;
s4: taking a new silicon carbide MOS tube in the test sample to replace the silicon carbide MOS tube which completes the low-temperature test in the reliability test system, testing the reliability of the silicon carbide MOS tube in the high-temperature environment, and calculating the reliability coefficientf 2 The method comprises the steps of carrying out a first treatment on the surface of the The high temperature environment is in the temperature range oft-t max Is used in the environment of (1),t max the temperature is the highest value of the environment temperature when the silicon carbide MOS tube is used;
s5: another new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which has completed the high-temperature test in the reliability test system, the reliability of the silicon carbide MOS tube under the optimal working environment is tested, and the reliability coefficient is calculatedf3；
S6: calculating the reliability coefficient of the silicon carbide MOS tube produced by the batch under the environment of wide temperature fluctuationPAccording to the reliability coefficientPThe reliability of the silicon carbide MOS tube produced by the batch is evaluated.
Further, step S3 includes:
s31: placing one silicon carbide MOS tube in a test sample into a reliability test system, setting the reliability test system as environmental data of an optimal working state, and obtaining an electric stress value of the silicon carbide MOS tube at the momentD；
S32: obtaining the highest value of the ambient temperature when the silicon carbide MOS tube is used from a buyertmax and minimum valuetmin, the environmental temperature in the reliability test system is controlled fromtUniformly adjust totmin, the rest environmental data are unchanged, and the electric stress value of the silicon carbide MOS tube is acquired every set time in the process, so that an electric stress value fluctuation data set in a low-temperature environment is obtained，/>Is the firstmThe electrical stress value of the sub-collection,mthe acquisition times of the electrical stress value of the low-temperature test are obtained;
s33: setting a threshold value allowed by an electric stress valueCalculating reliability coefficient of silicon carbide MOS tube in low-temperature environmentf1：
；
Wherein,tmis the first one in low temperature testmThe moment the electrical stress value is acquired a second time,tiis the first one in low temperature testiAt the moment of the sub-acquired electrical stress value,Diis the first one in low temperature testiThe electrical stress value of the sub-collection,ithe number of the times of collecting the electric stress value in the low-temperature test is given.
Further, step S4 includes:
s41: a new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which completes the low-temperature test in the reliability test system, and the reliability test system is set as environmental data of the optimal working state;
s42: moving the ambient temperature in a reliability test system fromtUniformly adjust totmax, the rest environmental data are unchanged, and the electric stress value of the silicon carbide MOS tube is obtained once every set time in the process, so as to obtain an electric stress value fluctuation data set under the high-temperature environment，/>Is the first one in high temperature testnThe electrical stress value of the sub-collection,nthe acquisition times of the electric stress value in the high-temperature test are shown;
s43: then, taking out the silicon carbide MOS tube after the high-temperature test, measuring the variation of the external dimension and thickness,calculating deformation coefficient of silicon carbide MOS tubeb：
；
Wherein,is the maximum value of the size deformation proportion in the silicon carbide MOS tube,liis the first one in the silicon carbide MOS tubeiMeasurement of individual dimensional parameters,/->Is the firstiThe standard value of the individual dimensional parameter,his the thickness measurement value of the silicon carbide MOS tube, +.>Is the standard thickness value of the silicon carbide MOS tube;
s44: calculating reliability coefficient of silicon carbide MOS tube in high-temperature environmentf2：
；
Wherein,tnis the first one in high temperature testnThe moment the electrical stress value is acquired a second time,teis the first one in high temperature testeThe moment the electrical stress value is acquired a second time,ethe number of the times of collecting the electric stress value in the high-temperature test is the number,deis the first one in high temperature testeAnd (5) acquiring the electric stress value for the second time.
Further, step S5 includes:
s51: another new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which has completed the high-temperature test in the reliability test system, and the reliability test system is set as environmental data of the optimal working state;
s52: current is conducted to the silicon carbide MOS tubeIHeating itself to 2tPowering off after max, and testing the change condition of the temperature of the silicon carbide MOS tube along with time in the heating and temperature-raising process of the silicon carbide MOS tube;
s53: establishing a heat relation model of the self-heating process of the silicon carbide MOS tube:
；
wherein,vfor the heating time of the silicon carbide MOS tube,mis the quality of the silicon carbide MOS tube,cis the specific heat capacity of the silicon carbide MOS tube,heating power of silicon carbide MOS tube, +.>Is the heat transfer power;
s54: calculating heat transfer power of self-heating process of silicon carbide MOS tube：
；
Wherein,Hthe heat exchange coefficient of the silicon carbide MOS tube and the environment in the reliability test system,Sis the surface area of the silicon carbide MOS tube,is the temperature of a silicon carbide MOS tube +.>The environment temperature in the reliability test system;
s55: calculating heating power of self-heating process of silicon carbide MOS tube：
；
Wherein,voltage of silicon carbide MOS tube，/>The absolute temperature of the silicon carbide MOS tube;
s56: calculating temperature value of heating of silicon carbide MOS tube along with time by using heat relation modelT：
；
S57: according to the heating time length of the silicon carbide MOS tube in the heating and temperature rising processvTemperature measured at the timeT'vAnd temperature calculated using a thermal relationship modelTvComparing to obtain reliability coefficientf3：
。
Further, step S6 includes:
s61: calculating the reliability coefficient of the silicon carbide MOS tube produced by the batch under the environment of wide temperature fluctuationP：
；
Wherein,the influence coefficients of low-temperature environment, high-temperature environment and self-heating on the reliability of the silicon carbide MOS tube are respectively,bis an allowable fluctuation value;
s62: according to the reliability coefficientPThe reliability of the silicon carbide MOS tubes produced by the batch is evaluated, and the reliability coefficient is calculatedPThe greater the reliability, the higher the reliability, and vice versa, the lower the reliability.
A system for performing the silicon carbide MOS tube reliability assessment method, comprising:
the test box provides an installation space for the silicon carbide MOS tube and is sealed;
the heating module and the refrigerating module are arranged in the test box and are electrically connected with the temperature control system;
the water pump and the water tank are connected with the test box through a pipeline, and a humidity control valve is arranged on the pipeline between the water pump and the test box;
the corrosion gas control valve is arranged on the corrosion-resistant pipeline between the corrosion gas release pump and the test box;
the pressure actuator is arranged in the test box and is provided with a pressure sensor;
the humidity sensor and the gas concentration sensor are also arranged in the test box.
The beneficial effects of the invention are as follows: according to the invention, the conditions of temperature change and influence on performance fluctuation under fluctuation conditions of the silicon carbide MOS tube under different working environments can be effectively researched, the performance change condition of the silicon carbide MOS tube in the self-heating process can be obtained, the reliability coefficient under each state is calculated based on the change condition of the performance fluctuation parameter, the reliability coefficient under each state is used for comprehensively evaluating the reliability of the whole silicon carbide MOS tube, and a data reference is provided for evaluating whether the silicon carbide MOS tube can adapt to the use environment and maintain good performance. When the performance of the silicon carbide MOS tube is researched, the invention follows the principle of single variable, provides the optimal working environment for the silicon carbide MOS tube, and avoids the influence of the change of the states of other environments on the accuracy of the test.
Drawings
Fig. 1 is a schematic block diagram of a silicon carbide MOS tube reliability evaluation system.
Detailed Description
The technical solution of the present invention will be described in further detail with reference to the accompanying drawings, but the scope of the present invention is not limited to the following description.
A reliability evaluation method of a silicon carbide MOS tube comprises the following steps:
s1: extracting a plurality of silicon carbide MOS tubes from the silicon carbide MOS tubes produced in the same batch in a random sampling mode to serve as test samples;
s2: establishing a reliability test system of a silicon carbide MOS tube, and setting carbonEnvironmental data including environmental temperature when the silicon-carbide MOS tube is in an optimal working statetHumidity ofsConcentration of corrosive gas environmentqAnd external stressF；
The long-term application of voltage to the grid electrode of the silicon carbide MOS tube in a high-temperature environment can promote the performance of the grid electrode to be aged rapidly, and the grid electrode of the silicon carbide MOS tube is subjected to positive voltage or negative voltage for a long time, so that the grid threshold voltage VGSth of the silicon carbide MOS tube can drift. And (3) testing the electric stress value of the silicon carbide MOS tube by the test, and judging that the silicon carbide MOS tube fails if the result exceeds the specified range.
The high humidity environment is a great test on the packaging resin material of the silicon carbide MOS tube and the passivation layer on the surface of the wafer, the resin material is not blocked from water vapor, and early defects are more easily exposed only by the passivation layer and the change of the humidity environment. Therefore, the humidity environment in the reliability test system needs to be controlled, so that the influence on the test result is avoided.
The bonding wire, the welding material and the resin material are subjected to thermal stress, ageing and failure risks exist, a tested object is placed into a test box, the temperature is changed between 55 ℃ below zero and 150 ℃ (H grade), different thermal stresses are applied to the packaging material in the process, the interface integrity of various materials in the silicon carbide MOS tube is achieved under the effect of thermal expansion and contraction, and in the working process, the defects can be reacted through fluctuation of an electric stress value.
S3: taking a silicon carbide MOS tube in a test sample, testing the reliability of the silicon carbide MOS tube in a low-temperature environment, and calculating a reliability coefficientf1. The low temperature environment is in the temperature range oft-tThe environment of the min is that,tmin is the minimum value of the ambient temperature when the silicon carbide MOS tube is used.
The step S3 comprises the following steps:
s31: placing one silicon carbide MOS tube in a test sample into a reliability test system, setting the reliability test system as environmental data of an optimal working state, and obtaining an electric stress value of the silicon carbide MOS tube at the momentD；
S32: obtaining the highest value of the ambient temperature when the silicon carbide MOS tube is used from a buyertmax and minimum valuetmin, the environmental temperature in the reliability test system is controlled fromtUniformly adjust totmin, the rest environmental data are unchanged, and the electric stress value of the silicon carbide MOS tube is acquired every set time in the process, so that an electric stress value fluctuation data set in a low-temperature environment is obtained，/>Is the firstmThe electrical stress value of the sub-collection,mthe acquisition times of the electrical stress value of the low-temperature test are obtained;
s33: setting a threshold value allowed by an electric stress valueCalculating reliability coefficient of silicon carbide MOS tube in low-temperature environmentf1：
；
Wherein,t m is the first one in low temperature testmThe moment the electrical stress value is acquired a second time,t i is the first one in low temperature testiAt the moment of the sub-acquired electrical stress value,D i is the first one in low temperature testiThe electrical stress value of the sub-collection,ithe number of the times of collecting the electric stress value in the low-temperature test is given.
S4: taking a new silicon carbide MOS tube in the test sample to replace the silicon carbide MOS tube which completes the low-temperature test in the reliability test system, testing the reliability of the silicon carbide MOS tube in the high-temperature environment, and calculating the reliability coefficientf 2 . The high temperature environment is in the temperature range oft-t max Is used in the environment of (1),t max the temperature is the highest value of the environment temperature when the silicon carbide MOS tube is used.
The step S4 includes:
s41: a new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which completes the low-temperature test in the reliability test system, and the reliability test system is set as environmental data of the optimal working state;
s42: moving the ambient temperature in a reliability test system fromtUniformly adjust totmax, the rest environmental data are unchanged, and the electric stress value of the silicon carbide MOS tube is obtained once every set time in the process, so as to obtain an electric stress value fluctuation data set under the high-temperature environment，/>Is the first one in high temperature testnThe electrical stress value of the sub-collection,nthe acquisition times of the electric stress value in the high-temperature test are shown;
s43: then, taking out the silicon carbide MOS tube after the high-temperature test, measuring the variation of the external dimension and thickness, and calculating the deformation coefficient of the silicon carbide MOS tubeb：
；
Wherein,is the maximum value of the size deformation proportion in the silicon carbide MOS tube,liis the first one in the silicon carbide MOS tubeiMeasurement of individual dimensional parameters,/->Is the firstiThe standard value of the individual dimensional parameter,his the thickness measurement value of the silicon carbide MOS tube, +.>Is the standard thickness value of the silicon carbide MOS tube;
s44: calculating reliability coefficient of silicon carbide MOS tube in high-temperature environmentf2：
；
Wherein,t n is the first one in high temperature testnThe moment the electrical stress value is acquired a second time,t e is high enough toTemperature test timeeThe moment the electrical stress value is acquired a second time,ethe number of the times of collecting the electric stress value in the high-temperature test is the number,d e is the first one in high temperature testeAnd (5) acquiring the electric stress value for the second time.
The silicon carbide MOS tube is placed under the optimal working environment temperature (for example, 25 ℃), current is introduced to enable the self-heating junction temperature to rise, and when the heating reaches 100 ℃, the silicon carbide MOS tube is naturally cooled to the environment temperature. The test can lead the bonding surfaces of different substances of the tested object to generate stress, and can find defects such as fracture of the bonding surface of the bonding wire and the aluminum layer, interfacial delamination of the chip surface and the resin material, interfacial delamination of the bonding wire and the resin material and the like, thereby evaluating the performance fluctuation of the process through the fluctuation of the electric stress value.
S5: another new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which has completed the high-temperature test in the reliability test system, the reliability of the silicon carbide MOS tube under the optimal working environment is tested, and the reliability coefficient is calculatedf3。
The step S5 comprises the following steps:
s51: another new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which has completed the high-temperature test in the reliability test system, and the reliability test system is set as environmental data of the optimal working state;
s52: current is conducted to the silicon carbide MOS tubeIHeating itself to 2tPowering off after max, and testing the change condition of the temperature of the silicon carbide MOS tube along with time in the heating and temperature-raising process of the silicon carbide MOS tube;
s53: establishing a heat relation model of the self-heating process of the silicon carbide MOS tube:
；
wherein,vfor the heating time of the silicon carbide MOS tube,mis the quality of the silicon carbide MOS tube,cis the specific heat capacity of the silicon carbide MOS tube,is silicon carbide MOHeating power of S tube->Is the heat transfer power;
s54: calculating heat transfer power of self-heating process of silicon carbide MOS tube：
；
Wherein,Hthe heat exchange coefficient of the silicon carbide MOS tube and the environment in the reliability test system,Sis the surface area of the silicon carbide MOS tube,is the temperature of a silicon carbide MOS tube +.>The environment temperature in the reliability test system;
s55: calculating heating power of self-heating process of silicon carbide MOS tube：
；
Wherein,is the voltage of a silicon carbide MOS tube +.>The absolute temperature of the silicon carbide MOS tube;
s56: calculating temperature value of heating of silicon carbide MOS tube along with time by using heat relation modelT：
；
S57: heating according to heat generationIn-process silicon carbide MOS tube heating durationvTemperature measured at the timeT'vAnd temperature calculated using a thermal relationship modelTvComparing to obtain reliability coefficientf3：
。
S6: calculating the reliability coefficient of the silicon carbide MOS tube produced by the batch under the environment of wide temperature fluctuationPAccording to the reliability coefficientPThe reliability of the silicon carbide MOS tube produced by the batch is evaluated.
The step S6 comprises the following steps:
s61: calculating the reliability coefficient of the silicon carbide MOS tube produced by the batch under the environment of wide temperature fluctuationP：
；
Wherein,the influence coefficients of low-temperature environment, high-temperature environment and self-heating on the reliability of the silicon carbide MOS tube are respectively,bis an allowable fluctuation value;
s62: according to the reliability coefficientPThe reliability of the silicon carbide MOS tubes produced by the batch is evaluated, and the reliability coefficient is calculatedPThe greater the reliability, the higher the reliability, and vice versa, the lower the reliability.
As shown in fig. 1, a system for performing the reliability evaluation method of a silicon carbide MOS transistor includes:
the test box provides installation space for the silicon carbide MOS pipe, and the test box is sealed, and the test box is as a closed box body, and the silicon carbide MOS pipe is put into the test box and is tested, still carries on the controller that is used for carrying out data processing and control on the test box.
The heating module and the refrigerating module are arranged in the test box and are electrically connected with the temperature control system; and a water pump and a water tank which are connected with the test box through pipelines, wherein a humidity control valve is arranged on the pipeline between the water pump and the test box.
The corrosion gas control valve is arranged on the corrosion-resistant pipeline between the corrosion gas release pump and the test box and provides corresponding corrosion gas for the test box.
The pressure actuator is arranged in the test box and is provided with a pressure sensor; when the embodiment is implemented, the conventional hydraulic press in the prior art can be used, and the hydraulic press is arranged in the test box, so that the extrusion of the silicon carbide MOS tube can be realized.
The humidity sensor and the gas concentration sensor are also arranged in the test box, and the humidity and the corrosion gas concentration in the test box are detected.
According to the invention, the conditions of temperature change and influence on performance fluctuation under fluctuation conditions of the silicon carbide MOS tube under different working environments can be effectively researched, the performance change condition of the silicon carbide MOS tube in the self-heating process can be obtained, the reliability coefficient under each state is calculated based on the change condition of the performance fluctuation parameter, the reliability coefficient under each state is used for comprehensively evaluating the reliability of the whole silicon carbide MOS tube, and a data reference is provided for evaluating whether the silicon carbide MOS tube can adapt to the use environment and maintain good performance. When the performance of the silicon carbide MOS tube is researched, the invention follows the principle of single variable, provides the optimal working environment for the silicon carbide MOS tube, and avoids the influence of the change of the states of other environments on the accuracy of the test.
In the description of the present invention, it should be understood that the terms "coaxial," "bottom," "one end," "top," "middle," "other end," "upper," "one side," "top," "inner," "front," "center," "two ends," etc. indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention; and those of ordinary skill in the art will appreciate that the benefits achieved by the present invention are merely better than those achieved by the current embodiments of the prior art in certain circumstances and are not intended to be the most excellent uses directly in the industry.
The foregoing is merely a preferred embodiment of the invention, and it is to be understood that the invention is not limited to the form disclosed herein but is not to be construed as excluding other embodiments, but is capable of numerous other combinations, modifications and environments and is capable of modifications within the scope of the inventive concept, either as taught or as a matter of routine skill or knowledge in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (6)
1. The reliability evaluation method of the silicon carbide MOS tube is characterized by comprising the following steps of:
s1: extracting a plurality of silicon carbide MOS tubes from the silicon carbide MOS tubes produced in the same batch in a random sampling mode to serve as test samples;
s2: establishing a reliability test system of the silicon carbide MOS tube, and setting environmental data including environmental temperature when the silicon carbide MOS tube is in an optimal working statetHumidity ofsConcentration of corrosive gas environmentqAnd external stressF；
S3: taking a silicon carbide MOS tube in a test sample, testing the reliability of the silicon carbide MOS tube in a low-temperature environment, and calculating a reliability coefficientf 1 The low temperature environment is in the temperature range oft-t min Is used in the environment of (1),t min the temperature is the lowest value of the environment temperature when the silicon carbide MOS tube is used;
s4: taking a new silicon carbide MOS tube in the test sample to replace the silicon carbide MOS tube which completes the low-temperature test in the reliability test system, testing the reliability of the silicon carbide MOS tube in the high-temperature environment, and calculating the reliability coefficientf 2 The method comprises the steps of carrying out a first treatment on the surface of the The high temperature environment is in the temperature range oft-t max Is used in the environment of (1),t max the silicon carbide MOS tube has the highest ambient temperature when in useA value;
s5: another new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which has completed the high-temperature test in the reliability test system, the reliability of the silicon carbide MOS tube under the optimal working environment is tested, and the reliability coefficient is calculatedf3；
S6: calculating the reliability coefficient of the silicon carbide MOS tube produced by the batch under the environment of wide temperature fluctuationPAccording to the reliability coefficientPThe reliability of the silicon carbide MOS tube produced by the batch is evaluated.
2. The method for evaluating reliability of a silicon carbide MOS transistor according to claim 1, wherein the step S3 comprises:
s31: placing one silicon carbide MOS tube in a test sample into a reliability test system, setting the reliability test system as environmental data of an optimal working state, and obtaining an electric stress value of the silicon carbide MOS tube at the momentD；
S32: obtaining the highest value of the ambient temperature when the silicon carbide MOS tube is used from a buyertmax and minimum valuetmin, the environmental temperature in the reliability test system is controlled fromtUniformly adjust totmin, the rest environmental data are unchanged, and the electric stress value of the silicon carbide MOS tube is acquired every set time in the process, so that an electric stress value fluctuation data set in a low-temperature environment is obtained，/>Is the firstmThe electrical stress value of the sub-collection,mthe acquisition times of the electrical stress value of the low-temperature test are obtained;
s33: setting a threshold value allowed by an electric stress valueCalculating reliability coefficient of silicon carbide MOS tube in low-temperature environmentf1：
；
Wherein,tmis the first one in low temperature testmThe moment the electrical stress value is acquired a second time,tiis the first one in low temperature testiAt the moment of the sub-acquired electrical stress value,Diis the first one in low temperature testiThe electrical stress value of the sub-collection,ithe number of the times of collecting the electric stress value in the low-temperature test is given.
3. The method for evaluating reliability of a silicon carbide MOS transistor according to claim 2, wherein the step S4 comprises:
s41: a new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which completes the low-temperature test in the reliability test system, and the reliability test system is set as environmental data of the optimal working state;
s42: moving the ambient temperature in a reliability test system fromtUniformly adjust totmax, the rest environmental data are unchanged, and the electric stress value of the silicon carbide MOS tube is obtained once every set time in the process, so as to obtain an electric stress value fluctuation data set under the high-temperature environment，/>Is the first one in high temperature testnThe electrical stress value of the sub-collection,nthe acquisition times of the electric stress value in the high-temperature test are shown;
s43: then, taking out the silicon carbide MOS tube after the high-temperature test, measuring the variation of the external dimension and thickness, and calculating the deformation coefficient of the silicon carbide MOS tubeb：
；
Wherein,is the size deformation in the silicon carbide MOS tubeThe maximum value of the ratio,liis the first one in the silicon carbide MOS tubeiMeasurement of individual dimensional parameters,/->Is the firstiThe standard value of the individual dimensional parameter,his the thickness measurement value of the silicon carbide MOS tube, +.>Is the standard thickness value of the silicon carbide MOS tube;
s44: calculating reliability coefficient of silicon carbide MOS tube in high-temperature environmentf2：
；
Wherein,tnis the first one in high temperature testnThe moment the electrical stress value is acquired a second time,teis the first one in high temperature testeThe moment the electrical stress value is acquired a second time,ethe number of the times of collecting the electric stress value in the high-temperature test is the number,deis the first one in high temperature testeAnd (5) acquiring the electric stress value for the second time.
4. The method for evaluating reliability of silicon carbide MOS transistors according to claim 3, wherein the step S5 comprises:
s51: another new silicon carbide MOS tube in the test sample is taken to replace the silicon carbide MOS tube which has completed the high-temperature test in the reliability test system, and the reliability test system is set as environmental data of the optimal working state;
s52: current is conducted to the silicon carbide MOS tubeIHeating itself to 2tPowering off after max, and testing the change condition of the temperature of the silicon carbide MOS tube along with time in the heating and temperature-raising process of the silicon carbide MOS tube;
s53: establishing a heat relation model of the self-heating process of the silicon carbide MOS tube:
；
wherein,vfor the heating time of the silicon carbide MOS tube,mis the quality of the silicon carbide MOS tube,cis the specific heat capacity of the silicon carbide MOS tube,heating power of silicon carbide MOS tube, +.>Is the heat transfer power;
s54: calculating heat transfer power of self-heating process of silicon carbide MOS tube：
；
Wherein,Hthe heat exchange coefficient of the silicon carbide MOS tube and the environment in the reliability test system,Sis the surface area of the silicon carbide MOS tube,is the temperature of a silicon carbide MOS tube +.>The environment temperature in the reliability test system;
s55: calculating heating power of self-heating process of silicon carbide MOS tube：
；
Wherein,is the voltage of a silicon carbide MOS tube +.>The absolute temperature of the silicon carbide MOS tube;
s56: calculating temperature value of heating of silicon carbide MOS tube along with time by using heat relation modelT：
；
S57: according to the heating time length of the silicon carbide MOS tube in the heating and temperature rising processvTemperature measured at the timeT'vAnd temperature calculated using a thermal relationship modelTvComparing to obtain reliability coefficientf3：
。
5. The method for evaluating reliability of a silicon carbide MOS transistor according to claim 4, wherein the step S6 includes:
s61: calculating the reliability coefficient of the silicon carbide MOS tube produced by the batch under the environment of wide temperature fluctuationP：
；
Wherein,the influence coefficients of low-temperature environment, high-temperature environment and self-heating on the reliability of the silicon carbide MOS tube are respectively,bis an allowable fluctuation value;
s62: according to the reliability coefficientPThe reliability of the silicon carbide MOS tubes produced by the batch is evaluated, and the reliability coefficient is calculatedPThe greater the reliability, the higher the reliability, and vice versa, the lower the reliability.
6. A system for performing the method for evaluating reliability of a silicon carbide MOS transistor according to any one of claims 1 to 5, comprising:
the test box provides an installation space for the silicon carbide MOS tube and is sealed;
the heating module and the refrigerating module are arranged in the test box and are electrically connected with the temperature control system;
the water pump and the water tank are connected with the test box through a pipeline, and a humidity control valve is arranged on the pipeline between the water pump and the test box;
the corrosion gas control valve is arranged on the corrosion-resistant pipeline between the corrosion gas release pump and the test box;
the pressure actuator is arranged in the test box and is provided with a pressure sensor;
the humidity sensor and the gas concentration sensor are also arranged in the test box.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH06326315A (en) * | 1993-05-13 | 1994-11-25 | Mitsubishi Electric Corp | Tft and evaluation of its realiability |
| CN109270423A (en) * | 2018-10-03 | 2019-01-25 | 大连理工大学 | A kind of evaluation test method of SiC MOSFET element low-temperature stability |
| CN116657249A (en) * | 2023-05-31 | 2023-08-29 | 上海天岳半导体材料有限公司 | Silicon carbide wafer with uniformly distributed stress and nondestructive and accurate wafer directional stress measuring method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06326315A (en) * | 1993-05-13 | 1994-11-25 | Mitsubishi Electric Corp | Tft and evaluation of its realiability |
| CN109270423A (en) * | 2018-10-03 | 2019-01-25 | 大连理工大学 | A kind of evaluation test method of SiC MOSFET element low-temperature stability |
| CN116657249A (en) * | 2023-05-31 | 2023-08-29 | 上海天岳半导体材料有限公司 | Silicon carbide wafer with uniformly distributed stress and nondestructive and accurate wafer directional stress measuring method |
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