CN117674624A - Three-level power module - Google Patents

Three-level power module Download PDF

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Publication number
CN117674624A
CN117674624A CN202311641226.5A CN202311641226A CN117674624A CN 117674624 A CN117674624 A CN 117674624A CN 202311641226 A CN202311641226 A CN 202311641226A CN 117674624 A CN117674624 A CN 117674624A
Authority
CN
China
Prior art keywords
circuit
switching
integrated gate
switch circuit
protection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311641226.5A
Other languages
Chinese (zh)
Inventor
李洪涛
余占清
李子衿
陈宇硕
王辰
屈鲁
曾嵘
赵彪
崔彬
孙淼
张公一
蔡放
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
State Grid Corp of China SGCC
State Grid Beijing Electric Power Co Ltd
Original Assignee
Tsinghua University
State Grid Corp of China SGCC
State Grid Beijing Electric Power Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University, State Grid Corp of China SGCC, State Grid Beijing Electric Power Co Ltd filed Critical Tsinghua University
Priority to CN202311641226.5A priority Critical patent/CN117674624A/en
Publication of CN117674624A publication Critical patent/CN117674624A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/525—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with automatic control of output waveform or frequency

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention discloses a three-level power module. Comprising the following steps: three input ports; an output port; the first end of the first switch circuit is connected with a first input port in the three input ports, and the second end of the first switch circuit is connected with the output port; the first end of the second switch circuit is connected with a second input port in the three input ports, and the second end of the second switch circuit is connected with the output port; the first end of the third switching circuit is connected with a third input port in the three input ports, the second end of the third switching circuit is connected between any two integrated gate commutated thyristors contained in the first switching circuit, and the third end of the third switching circuit is connected between any two integrated gate commutated thyristors contained in the second switching circuit; and the controller is connected with the first switch circuit, the second switch circuit and the third switch circuit. The invention solves the technical problem of lower safety use margin of devices in the device series circuit.

Description

Three-level power module
Technical Field
The invention relates to the field of power grid control, in particular to a three-level power module.
Background
The integrated gate commutated thyristor (Integrated Gate Commutated Thyristor, IGCT) is used as a high-power crimping type power electronic full-control device, and has wide application in high-voltage high-capacity three-level inverter due to the advantages of low loss, low cost, large capacity, good safety and the like, the traditional three-level converter based on the IGCT is limited by the voltage tolerance capability of a single IGCT device, the direct current bus voltage of the traditional three-level converter is generally not more than 5kV, the power of the whole machine is generally less than 10MW, the IGCT is generally used in series for obtaining higher output voltage, however, the IGCT series can lead to longer press-fitting structure, thereby increasing stray inductance of the commutated current, namely, increasing voltage peak of the device turn-off and reducing the safety use margin of the device.
In view of the above problems, no effective solution has been proposed at present.
Disclosure of Invention
The embodiment of the invention provides a three-level power module, which at least solves the technical problem of lower safety use margin of devices in a device series circuit.
According to an aspect of an embodiment of the present invention, there is provided a three-level power module including: three input ports for inputting voltages of different levels; the output port is used for outputting the voltage input by any one of the three input ports; the first end of the first switching circuit is connected with a first input port in the three input ports, the second end of the first switching circuit is connected with an output port, and the first switching circuit comprises a plurality of integrated gate commutated thyristors; the first end of the second switching circuit is connected with a second input port in the three input ports, the second end of the second switching circuit is connected with the output port, and the second switching circuit comprises a plurality of integrated gate commutated thyristors; the first end of the third switching circuit is connected with a third input port of the three input ports, the second end of the third switching circuit is connected between any two integrated gate commutated thyristors contained in the first switching circuit, the third end of the third switching circuit is connected between any two integrated gate commutated thyristors contained in the second switching circuit, and the third switching circuit contains a plurality of integrated gate commutated thyristors; and the controller is connected with the first switch circuit, the second switch circuit and the third switch circuit and is used for controlling the conduction states of the first switch circuit, the second switch circuit and the third switch circuit so that the output port outputs the voltage input by any one input port.
Optionally, the plurality of integrated gate commutated thyristors in the first switching circuit are connected in series between the first end of the first switching circuit and the second end of the first switching circuit, and the plurality of integrated gate commutated thyristors in the second switching circuit are connected in series between the second end of the second switching circuit and the first end of the second switching circuit.
Optionally, the third switching circuit includes: the first end of the first switching branch is connected with the first end of the third switching circuit, the second end of the first switching branch is connected with the second end of the third switching circuit, and the first switching branch comprises a plurality of integrated gate commutated thyristors; the first end of the second switching branch is connected with the first end of the third switching circuit, the second end of the second switching branch is connected with the third end of the third switching circuit, and the second switching branch comprises a plurality of integrated gate commutated thyristors.
Optionally, the plurality of integrated gate commutated thyristors in the first switching leg are connected in series between the second end of the first switching leg and the first end of the first switching leg, and the plurality of integrated gate commutated thyristors in the second switching leg are connected in series between the first end of the second switching leg and the second end of the second switching leg.
Optionally, each integrated gate commutated thyristor in the three-level power module is connected in parallel with an anti-series diode.
Optionally, the first input port is used for inputting a high-level voltage, the second input port is used for inputting a low-level voltage, and the third input port is used for inputting a zero-level voltage.
Optionally, the three-level power module further includes: the first end of the first protection circuit is connected with the first input port, the second end of the first protection circuit is connected with the first end of the first switch circuit, and the third end of the first protection circuit is connected with the third input port; and the first end of the second protection circuit is connected with the second input port, the second end of the second protection circuit is connected with the first end of the second switch circuit, and the third end of the second protection circuit is connected with the third input port.
Optionally, the first protection circuit includes: the first anode reactor is connected in series between the first end of the first protection circuit and the second end of the first protection circuit; the first end of the first clamping resistor is connected with the first end of the first protection circuit; the anode of the first clamping diode is connected with the second end of the first protection circuit, and the cathode of the first clamping diode is connected with the second end of the first clamping resistor; the first end of the first clamping capacitor is connected with the negative electrode of the first clamping diode and the second end of the first clamping resistor, and the second end of the first clamping capacitor is connected with the third end of the first protection circuit.
Optionally, the second protection circuit includes: the second anode reactor is connected in series between the first end of the second protection circuit and the second end of the second protection circuit; the first end of the second clamping resistor is connected with the first end of the second protection circuit; the positive electrode of the second clamping diode is connected with the second end of the second clamping resistor, and the negative electrode of the second clamping diode is connected with the second end of the second protection circuit; and the first end of the second clamping capacitor is connected with the positive electrode of the second clamping diode and the second end of the second clamping resistor, and the second end of the second clamping capacitor is connected with the third end of the second protection circuit.
Optionally, the integrated gate commutated thyristor in the three-level power module forms at least one press-fit structure.
The three-level power module disclosed by the embodiment of the invention comprises the following components: three input ports for inputting voltages of different levels; the output port is used for outputting the voltage input by any one of the three input ports; the first end of the first switching circuit is connected with a first input port in the three input ports, the second end of the first switching circuit is connected with an output port, and the first switching circuit comprises a plurality of integrated gate commutated thyristors; the first end of the second switching circuit is connected with a second input port in the three input ports, the second end of the second switching circuit is connected with the output port, and the second switching circuit comprises a plurality of integrated gate commutated thyristors; the first end of the third switching circuit is connected with a third input port of the three input ports, the second end of the third switching circuit is connected between any two integrated gate commutated thyristors contained in the first switching circuit, the third end of the third switching circuit is connected between any two integrated gate commutated thyristors contained in the second switching circuit, and the third switching circuit contains a plurality of integrated gate commutated thyristors; and the controller is connected with the first switch circuit, the second switch circuit and the third switch circuit and is used for controlling the conduction states of the first switch circuit, the second switch circuit and the third switch circuit so that the output port outputs the voltage input by any one input port. It is easy to note that a plurality of integrated gate commutated thyristors can be respectively installed in the first switch circuit, the second switch circuit and the third switch circuit, and the conducting states of the first switch circuit, the second switch circuit and the third switch circuit are controlled by a controller, so that the number of the integrated gate commutated thyristors conducted at the same time in the control circuit is reduced, and further, the problem that the safety use margin of devices in the circuit is lower due to the fact that the integrated gate commutated thyristors are too much in series connection is avoided, namely, the safety use margin of the circuit is improved, and the technical problem that the safety use margin of devices in the device series circuit is lower is solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a schematic diagram of a three level power module according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a three-level module based on an integrated gate commutated thyristor in accordance with an embodiment of the invention;
FIG. 3 is a schematic diagram of the on state of a three-level power module according to an embodiment of the present invention;
fig. 4 is a schematic diagram of the structural arrangement of a three-level power module according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
According to an embodiment of the present invention, there is provided a three-level power module, fig. 1 is a schematic diagram of a three-level power module according to an embodiment of the present invention, and as shown in fig. 1, a three-level power module 10 includes:
three input ports 101 for inputting voltages of different levels.
The three input ports 101 may be a high level input port, a low level input port, and a zero level input port, and optionally, the three input ports 101 may be used to input voltages of different levels, where the voltages of different levels may be ac voltages.
An output port 102 for outputting a voltage input from any one of the three input ports 101.
The output port 102 may be an ac output port, and alternatively, the output port 102 may be used to output voltages of different levels according to the connection states between different devices in the three-level power module 10.
A first switch circuit 103, a first end of the first switch circuit 103 is connected to a first input port 1011 of the three input ports 101, a second end of the first switch circuit 103 is connected to an output port 102, and the first switch circuit 103 comprises a plurality of integrated gate commutated thyristors.
In an alternative embodiment, a plurality of integrated gate commutated thyristors may be connected in series to obtain the first switch circuit 103, and optionally, the number of integrated gate commutated thyristors in the first switch circuit 103 is not specifically limited in the present invention, and the number of integrated gate commutated thyristors in the first switch circuit 103 is illustrated in the present invention as 2. Alternatively, a first terminal of the first switching circuit 103 may be connected to the first input port 1011, and a second terminal of the first switching circuit 103 may be connected to the output port 102, so that the three-level power module 10 may be controlled to output an ac voltage through the output port 102 in case that a high-level voltage is input to the first input port 1011.
And a second switch circuit 104, a first end of the second switch circuit 104 is connected with a second input port 1012 of the three input ports 101, a second end of the second switch circuit 104 is connected with the output port 102, and the second switch circuit 104 comprises a plurality of integrated gate commutated thyristors.
In an alternative embodiment, a plurality of integrated gate commutated thyristors may be connected in series to obtain the second switch circuit 104, and optionally, the number of integrated gate commutated thyristors in the second switch circuit 104 is not specifically limited in the present invention, and the number of integrated gate commutated thyristors in the second switch circuit 104 is illustrated in the present invention as 2. Alternatively, a first end of the second switching circuit 104 may be connected to the first input port 1012, and a second end of the second switching circuit 104 may be connected to the output port 102, so that the three-level power module 10 may be controlled to output an ac voltage through the output port 102 in case that a low-level voltage is input to the first input port 1012.
The third switch circuit 105, the first end of the third switch circuit 105 is connected with the third input port 1013 in the three input ports 101, the second end of the third switch circuit 105 is connected between any two integrated gate commutated thyristors included in the first switch circuit 103, the third end of the third switch circuit 105 is connected between any two integrated gate commutated thyristors included in the second switch circuit 104, and the third switch circuit 105 includes a plurality of integrated gate commutated thyristors.
In an alternative embodiment, a plurality of integrated gate commutated thyristors may be connected in series to obtain the third switch circuit 105, and optionally, the number of integrated gate commutated thyristors in the third switch circuit 105 is not specifically limited in the present invention, and the number of integrated gate commutated thyristors in the third switch circuit 105 is illustrated in the present invention as 2. Alternatively, the first end of the third switch circuit 105 may be connected to the third input port 1013 of the three input ports 101, the second end of the third switch circuit 105 may be connected between any two integrated gate commutated thyristors included in the first switch circuit 103, and the third end of the third switch circuit 105 is connected between any two integrated gate commutated thyristors included in the second switch circuit 104, so that the third input port 1013 may be enabled to output an ac voltage through the output port 102 when a zero level is input.
And a controller 106 connected to the first switch circuit 103, the second switch circuit 104, and the third switch circuit 105, for controlling the on states of the first switch circuit 103, the second switch circuit 104, and the third switch circuit 105 so that the output port 102 outputs the voltage inputted from any one of the input ports.
In an alternative embodiment, the controller 106 may be configured in the three-level power module 10, so that the controller 106 may be used to control the voltage output by the output port 102 of the three-level power module 10 by controlling the on states of the first switch circuit 103, the second switch circuit 104, and the third switch circuit 105 in the three-level power module 10, that is, by controlling the on states of the first switch circuit 103, the second switch circuit 104, and the third switch circuit 105, to control the voltage output by the output port 102 to be a high-level voltage, a low-level voltage, or a zero-level voltage.
The three-level power module disclosed by the embodiment of the invention comprises the following components: three input ports for inputting voltages of different levels; the output port is used for outputting the voltage input by any one of the three input ports; the first end of the first switching circuit is connected with a first input port in the three input ports, the second end of the first switching circuit is connected with an output port, and the first switching circuit comprises a plurality of integrated gate commutated thyristors; the first end of the second switching circuit is connected with a second input port in the three input ports, the second end of the second switching circuit is connected with the output port, and the second switching circuit comprises a plurality of integrated gate commutated thyristors; the first end of the third switching circuit is connected with a third input port of the three input ports, the second end of the third switching circuit is connected between any two integrated gate commutated thyristors contained in the first switching circuit, the third end of the third switching circuit is connected between any two integrated gate commutated thyristors contained in the second switching circuit, and the third switching circuit contains a plurality of integrated gate commutated thyristors; and the controller is connected with the first switch circuit, the second switch circuit and the third switch circuit and is used for controlling the conduction states of the first switch circuit, the second switch circuit and the third switch circuit so that the output port outputs the voltage input by any one input port. It is easy to note that a plurality of integrated gate commutated thyristors can be respectively installed in the first switch circuit, the second switch circuit and the third switch circuit, and the conducting states of the first switch circuit, the second switch circuit and the third switch circuit are controlled by a controller, so that the number of the integrated gate commutated thyristors conducted at the same time in the control circuit is reduced, and further, the problem that the safety use margin of devices in the circuit is lower due to the fact that the integrated gate commutated thyristors are too much in series connection is avoided, namely, the safety use margin of the circuit is improved, and the technical problem that the safety use margin of devices in the device series circuit is lower is solved.
Optionally, the plurality of integrated gate commutated thyristors in the first switching circuit 103 are connected in series between the first end of the first switching circuit 103 and the second end of the first switching circuit 103, and the plurality of integrated gate commutated thyristors in the second switching circuit 104 are connected in series between the second end of the second switching circuit 104 and the first end of the second switching circuit 104.
In an alternative embodiment, the plurality of integrated gate commutated thyristors in the first switching circuit 103 are connected in series, alternatively, the connection order between the plurality of integrated gate commutated thyristors may be in the order from the first end of the first switching circuit 103 to the second end of the first switching circuit 103.
In another alternative embodiment, the plurality of integrated gate commutated thyristors in the second switching circuit 104 are connected in series, alternatively, the connection order between the plurality of integrated gate commutated thyristors may be in the order from the second end of the second switching circuit 104 to the first end of the second switching circuit 104.
Optionally, the third switching circuit 105 includes: a first switching leg, a first end of the first switching leg being connected to a first end of the third switching circuit 105, a second end of the first switching leg being connected to a second end of the third switching circuit 105, the first switching leg comprising a plurality of integrated gate commutated thyristors; and a second switching branch, a first end of the second switching branch is connected with a first end of the third switching circuit 105, a second end of the second switching branch is connected with a third end of the third switching circuit 105, and the second switching branch comprises a plurality of integrated gate commutated thyristors.
In an alternative embodiment, the third switching circuit 105 may include a first switching leg and a second switching leg, where a first end of the first switching leg is connected to a first end of the third switching circuit 105, a second end of the first switching leg is connected to a second end of the third switching circuit 105, and a first end of the second switching leg is connected to a first end of the third switching circuit 105, and a second end of the second switching leg is connected to a third end of the third switching circuit 105. Optionally, the first switching leg includes a plurality of integrated gate commutated thyristors, and the second switching leg includes a plurality of integrated gate commutated thyristors, and optionally, in the present invention, the first switching leg includes an integrated gate commutated thyristor, and the second switching leg includes an integrated gate commutated thyristor is described as an example.
Optionally, the plurality of integrated gate commutated thyristors in the first switching leg are connected in series between the second end of the first switching leg and the first end of the first switching leg, and the plurality of integrated gate commutated thyristors in the second switching leg are connected in series between the first end of the second switching leg and the second end of the second switching leg.
In an alternative embodiment, a plurality of integrated gate commutated thyristors may be included in the first switching leg, wherein the plurality of integrated gate commutated thyristors may be connected in series between the second end of the first switching leg and the first end of the first switching leg, and optionally, a plurality of integrated gate commutated thyristors may be included in the second switching leg, wherein the plurality of integrated gate commutated thyristors may be connected in series between the first end of the second switching leg and the second end of the second switching leg.
Alternatively, each integrated gate commutated thyristor in the three-level power module 10 is connected in parallel with an anti-series diode.
The anti-serial diode is to connect the positive pole and the negative pole of the two diodes together so that the current directions of the two diodes are opposite, and the connection mode is generally applied to some circuit designs for realizing some specific functions, for example, preventing reverse current from flowing into an input terminal in a radio frequency amplifier.
In an alternative embodiment, reverse current flow into the input is avoided by connecting an anti-series diode in parallel with each integrated gate commutated thyristor.
Alternatively, the first input port 1011 is used to input a high level voltage, the second input port 1012 is used to input a low level voltage, and the third input port 1013 is used to input a zero level voltage.
In an alternative embodiment, the three input ports 101 may include a first input port 101, a second input port 1012, and a third input port 1013, wherein the first input port 101 may be a high level input port for inputting a high level voltage, the second input port 1012 may be a low level input port for inputting a low level voltage, and the third input port 1013 may be a zero level input port for inputting a zero level voltage.
Optionally, the three-level power module 10 further includes: a first protection circuit, a first end of which is connected to the first input port 1011, a second end of which is connected to the first end of the first switch circuit 103, and a third end of which is connected to the third input port 1013; and a second protection circuit, a first end of which is connected to the second input port 1012, a second end of which is connected to the first end of the second switch circuit 104, and a third end of which is connected to the third input port 1013.
In an alternative embodiment, the three-level power module 10 further includes a first protection circuit, and a second protection circuit, optionally, a first end of the first protection circuit may be connected to the first input port 1011, a second end of the first protection circuit may be connected to the first end of the first switch circuit 103, and a third end of the first protection circuit may be connected to the third input port 1013, optionally, a first end of the second protection circuit may be connected to the second input port 1012, a second end of the second protection circuit may be connected to the first end of the second switch circuit 104, and a third end of the second protection circuit may be connected to the third input port 1013.
Optionally, the first protection circuit includes: the first anode reactor is connected in series between the first end of the first protection circuit and the second end of the first protection circuit; the first end of the first clamping resistor is connected with the first end of the first protection circuit; the anode of the first clamping diode is connected with the second end of the first protection circuit, and the cathode of the first clamping diode is connected with the second end of the first clamping resistor; the first end of the first clamping capacitor is connected with the negative electrode of the first clamping diode and the second end of the first clamping resistor, and the second end of the first clamping capacitor is connected with the third end of the first protection circuit.
The first anode reactor can be a power device used in a direct current transmission system, and is mainly used for limiting short-circuit current in a direct current transmission line, protecting the transmission line and related devices, and is usually arranged at one end of the direct current transmission line and connected with a first anode electrode of the direct current transmission line. The direct-current power transmission system can be stabilized in operation, reliability and safety of the system are improved, the first anode reactor is usually composed of an inductor and a capacitor, and the magnitude of short-circuit current can be effectively controlled by adjusting the values of the inductor and the capacitor. The protection device is an important protection device in a direct current transmission system and plays an important role in ensuring the stable operation of the system.
The first resistor may be a resistor device for use in a circuit, which is typically designed to be fixedly mounted on a circuit board, and thus is known as a "resistor-clamp", which is typically used in circuit applications such as current limiting, voltage dividing, current regulation, and impedance matching, and which is typically small in appearance and size, and which may be fixed, but may also be variable, for use in integrated circuits and other microelectronic devices.
The first diode may be a special diode, also called schottky diode, which is composed of a P-type semiconductor and an N-type semiconductor material, and has a similar structure to a common PN junction diode.
The first clamp capacitor is a capacitor in which a dielectric material and an electrode are embedded or nested together to increase the capacitance of the capacitor, and such a capacitor generally uses a high dielectric constant material such as niobium oxide, titanium oxide or zirconium oxide as a dielectric, and is generally used for high frequency circuits and radio frequency applications because of their higher capacitance density and lower loss.
In an alternative embodiment, the first protection circuit may include a first anode reactor, a first clamping resistor, a first clamping diode, and a first clamping capacitor, where the first anode reactor is connected in series between a first end of the first protection circuit and a second end of the first protection circuit, the first end of the first clamping resistor is connected to the first end of the first protection circuit, the second end of the first clamping resistor is connected to the negative electrode of the first clamping diode, optionally, an anode of the first clamping diode is connected to the second end of the first protection circuit, the first end of the first clamping capacitor is connected to the negative electrode of the first clamping diode and the second end of the first clamping resistor, and the second end of the first clamping capacitor is connected to the third end of the first protection circuit.
Optionally, the second protection circuit includes: the second anode reactor is connected in series between the first end of the second protection circuit and the second end of the second protection circuit; the first end of the second clamping resistor is connected with the first end of the second protection circuit; the positive electrode of the second clamping diode is connected with the second end of the second clamping resistor, and the negative electrode of the second clamping diode is connected with the second end of the second protection circuit; and the first end of the second clamping capacitor is connected with the positive electrode of the second clamping diode and the second end of the second clamping resistor, and the second end of the second clamping capacitor is connected with the third end of the second protection circuit.
In an alternative embodiment, the second protection circuit may include a second anode reactor, a second clamping resistor, a second clamping diode, and a second clamping capacitor, where the second anode reactor is connected in series between a first end of the second protection circuit and a second end of the second protection circuit, the first end of the second clamping resistor is connected to the first end of the second protection circuit, the second end of the second clamping resistor is connected to the positive electrode of the second clamping diode, the negative electrode of the second clamping diode is connected to the second end of the second protection circuit, the first end of the second clamping capacitor is connected to the positive electrode of the second clamping diode and the second end of the second clamping resistor, and the second end of the second clamping capacitor is connected to the third end of the second protection circuit.
Fig. 2 is a schematic diagram of a three-level module based on an integrated gate commutated thyristor according to an embodiment of the present invention, as shown in fig. 2, the three-level module may include a first input port, a second input port, and a third input port, where the first input port is P in fig. 2, the second input port is N in fig. 2, the third input port is O in fig. 2, the output port is the AC in fig. 2, the circuit formed by connecting T1, D1, and T2, D2 in fig. 2, the second switch circuit is the circuit formed by connecting T3, D3, and T4, D4 in fig. 2, the third switch circuit is the circuit formed by connecting T5, D5, and T6, D6 in fig. 2, wherein, T1, T2, T3, T4, T5, and T6 are integrated gate commutated thyristors, D1, D2, D3, D4, D5, and D6 are anti-serial diodes, and optionally, the three-level module may further include a first protection circuit and a second including circuit, where the first protection circuit includes a first anode reactor, a first clamping resistor, a first clamping diode, a first clamping capacitor, that is, a capacitor Ccl connected to the left of the P input end in fig. 2, lcl, D, rcl, and a capacitor Cc2 above, where the second anode reactor, the second clamping resistor, the second clamping diode, and the second clamping capacitor, that is, lcl, D, rcl connected to the left of the P input end in fig. 2, are included.
Fig. 3 is a schematic diagram of a conducting state of a three-level power module according to an embodiment of the present invention, as shown in fig. 3, where fig. 3 includes a first input port, i.e., P in fig. 3, a second input port, i.e., N in fig. 3, a third input port, i.e., O in fig. 3, an output port, i.e., AC in fig. 3, and optionally, when T1 and T2 are conducting, an output port AC of the three-level power module outputs a high level, when T3 and T4 are conducting, an output port AC of the three-level power module outputs a low level, when T2 and T5 are conducting, an output port AC of the three-level power module outputs a zero level, when T3 and T6 are conducting, an output port AC of the three-level power module outputs a zero level, wherein T1, T2, T3, T4, T5, and T6 are integrated gate commutating thyristors, and D1, D2, D3, D4, D5 and D6 are anti-serial diodes.
Optionally, the integrated gate commutated thyristor in the three-level power module forms at least one press-fit structure.
Fig. 4 is a schematic structural arrangement diagram of a three-level power module according to an embodiment of the present invention, as shown in fig. 4, the press-mounting structures may include a press-mounting structure A1, a press-mounting structure A2, a press-mounting structure B1, and a press-mounting structure B2, where A1 and B1 are integrated gate commutated thyristor press-mounting structures, A2 and B2 are anti-parallel diode press-mounting structures, A1 and B1 are arranged left and right, A1 and A2 are arranged left and right, the press-mounting structures A1 are sequentially T1, T2, and T5 from top to bottom, the corresponding press-mounting structures A2 are sequentially D1, D2, and D5 from top to bottom, the number of T1, T2, and T5 may be 3, the number of corresponding D1, D2, and D5 may be 3, respectively, the corresponding devices use busbar connection, the press-mounting structures B1 from top to bottom are sequentially T4, T3 and T6, the corresponding press-mounting structures B2 are sequentially from top to bottom, the corresponding press-mounting structures B2 are sequentially T4, D4 and D6, the corresponding to bottom are sequentially connected to each other, the three-level control boards may be further connected to form a three-level bridge capacitor, and the three-level bridge capacitor circuit board, the three-level bridge circuit board may be connected to the three-level bridge circuit board, and the bridge circuit board may be the bridge circuit board.
The foregoing embodiment numbers of the present invention are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
In the foregoing embodiments of the present invention, the descriptions of the embodiments are emphasized, and for a portion of this disclosure that is not described in detail in this embodiment, reference is made to the related descriptions of other embodiments.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.

Claims (10)

1. A three-level power module, comprising:
three input ports for inputting voltages of different levels;
an output port for outputting a voltage input from any one of the three input ports;
a first switch circuit, a first end of which is connected with a first input port of the three input ports, a second end of which is connected with the output port, and the first switch circuit comprises a plurality of integrated gate commutated thyristors;
the first end of the second switching circuit is connected with a second input port in the three input ports, the second end of the second switching circuit is connected with the output port, and the second switching circuit comprises a plurality of integrated gate commutated thyristors;
the first end of the third switching circuit is connected with a third input port in the three input ports, the second end of the third switching circuit is connected between any two integrated gate pole commutated thyristors contained in the first switching circuit, the third end of the third switching circuit is connected between any two integrated gate pole commutated thyristors contained in the second switching circuit, and the third switching circuit contains a plurality of integrated gate pole commutated thyristors;
and the controller is connected with the first switch circuit, the second switch circuit and the third switch circuit and is used for controlling the conduction states of the first switch circuit, the second switch circuit and the third switch circuit so that the output port outputs the voltage input by any one input port.
2. The three level power module of claim 1, wherein a plurality of integrated gate commutated thyristors in the first switching circuit are connected in series between a first end of the first switching circuit and a second end of the first switching circuit, and wherein a plurality of integrated gate commutated thyristors in the second switching circuit are connected in series between the second end of the second switching circuit and the first end of the second switching circuit.
3. The three-level power module of claim 1, wherein the third switching circuit comprises:
a first switching branch, wherein a first end of the first switching branch is connected with a first end of the third switching circuit, a second end of the first switching branch is connected with a second end of the third switching circuit, and the first switching branch comprises a plurality of integrated gate commutated thyristors;
the first end of the second switch branch is connected with the first end of the third switch circuit, the second end of the second switch branch is connected with the third end of the third switch circuit, and the second switch branch comprises a plurality of integrated gate pole commutated thyristors.
4. The three level power module of claim 3, wherein a plurality of integrated gate commutated thyristors in the first switching leg are connected in series between the second end of the first switching leg and the first end of the first switching leg, and a plurality of integrated gate commutated thyristors in the second switching leg are connected in series between the first end of the second switching leg and the second end of the second switching leg.
5. The three level power module of claim 1, wherein each integrated gate commutated thyristor in the three level power module is connected in parallel with an anti-series diode.
6. The three level power module of claim 5, wherein the first input port is for inputting a high level voltage, the second input port is for inputting a low level voltage, and the third input port is for inputting a zero level voltage.
7. The three-level power module of claim 1, further comprising:
the first end of the first protection circuit is connected with the first input port, the second end of the first protection circuit is connected with the first end of the first switch circuit, and the third end of the first protection circuit is connected with the third input port;
the first end of the second protection circuit is connected with the second input port, the second end of the second protection circuit is connected with the first end of the second switch circuit, and the third end of the second protection circuit is connected with the third input port.
8. The three level power module of claim 7, wherein the first protection circuit comprises:
a first anode reactor connected in series between a first end of the first protection circuit and a second end of the first protection circuit;
the first end of the first clamping resistor is connected with the first end of the first protection circuit;
the positive electrode of the first clamping diode is connected with the second end of the first protection circuit, and the negative electrode of the first clamping diode is connected with the second end of the first clamping resistor;
the first end of the first clamping capacitor is connected with the negative electrode of the first clamping diode and the second end of the first clamping resistor, and the second end of the first clamping capacitor is connected with the third end of the first protection circuit.
9. The three level power module of claim 7, wherein the second protection circuit comprises:
a second anode reactor connected in series between a first end of the second protection circuit and a second end of the second protection circuit;
the first end of the second clamping resistor is connected with the first end of the second protection circuit;
the positive electrode of the second clamping diode is connected with the second end of the second clamping resistor, and the negative electrode of the second clamping diode is connected with the second end of the second protection circuit;
the first end of the second clamping capacitor is connected with the positive electrode of the second clamping diode and the second end of the second clamping resistor, and the second end of the second clamping capacitor is connected with the third end of the second protection circuit.
10. The three level power module of claim 1, wherein the integrated gate commutated thyristor in the three level power module forms at least one press-fit structure.
CN202311641226.5A 2023-12-01 2023-12-01 Three-level power module Pending CN117674624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311641226.5A CN117674624A (en) 2023-12-01 2023-12-01 Three-level power module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311641226.5A CN117674624A (en) 2023-12-01 2023-12-01 Three-level power module

Publications (1)

Publication Number Publication Date
CN117674624A true CN117674624A (en) 2024-03-08

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Family Applications (1)

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Country Link
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