CN117672824A - Preparation method of diamond semiconductor device - Google Patents
Preparation method of diamond semiconductor device Download PDFInfo
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- CN117672824A CN117672824A CN202311675682.1A CN202311675682A CN117672824A CN 117672824 A CN117672824 A CN 117672824A CN 202311675682 A CN202311675682 A CN 202311675682A CN 117672824 A CN117672824 A CN 117672824A
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- Prior art keywords
- layer
- substrate
- semiconductor device
- diamond semiconductor
- dielectric layer
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 26
- 239000010432 diamond Substances 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 238000004064 recycling Methods 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Abstract
A preparation method of a diamond semiconductor device solves the problem of higher production cost of the existing production method. The method comprises the following steps: s1, preparing a substrate; s2, preparing a dielectric layer on the substrate; s3, growing an epitaxial layer on the dielectric layer; s4, depositing a polycrystalline diamond layer on the epitaxial layer; s5, stripping the epitaxial layer and the dielectric layer, and recycling the substrate; and S6, sequentially depositing an electrode layer and a cap layer on the epitaxial layer.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a preparation method of a diamond semiconductor device.
Background
Gallium nitride is used as a third-generation semiconductor material, has excellent performance and wide application prospect, and has higher energy gap and thermal temperature property and is widely concerned as a novel material. However, due to the limitation of heat dissipation of the substrate, the performance of the gallium nitride device cannot be effectively exerted, and the performance of the gallium nitride power device is limited.
Diamond has good heat dissipation performance, so that the production of gallium nitride devices on diamond becomes a comparatively large number of adopted modes, but the mode has defects such as difficult stripping and high final production cost.
Disclosure of Invention
Aiming at the situation, in order to overcome the defects of the prior art, the invention provides a preparation method of a diamond semiconductor device, which effectively solves the problem of higher production cost of the existing production method.
In order to achieve the above purpose, the technical scheme of the invention is as follows: a method of fabricating a diamond semiconductor device, comprising the steps of:
s1, preparing a substrate;
s2, preparing a dielectric layer on the substrate;
s3, growing an epitaxial layer on the dielectric layer;
s4, depositing a polycrystalline diamond layer on the epitaxial layer;
s5, stripping the epitaxial layer and the dielectric layer, and recycling the substrate;
and S6, sequentially depositing an electrode layer and a cap layer on the epitaxial layer.
Preferably, the substrate includes a single crystal silicon substrate, a sapphire substrate, and a silicon carbide substrate.
Preferably, the dielectric layer is graphene or hexagonal boron nitride.
Preferably, the dielectric layer is grown on the substrate by one or more of dry transfer, wet transfer, chemical vapor deposition, physical vapor deposition, or in situ chemical reaction.
Preferably, in the step 3, an epitaxial layer is grown on the dielectric layer by metal organic chemical vapor deposition.
Preferably, the epitaxial layer is any combination of one or more than one of InAlN, inAlGaN and AlGaN.
Preferably, in the step 4, the polycrystalline diamond layer is deposited by a microwave plasma chemical vapor deposition method.
Preferably, the peeling method in the step 5 includes mechanical peeling assisted by an adhesive tape, ultrasonic-assisted liquid-phase peeling, and gas-phase peeling.
Compared with the prior art, the invention has the following advantages: 1) Depositing a dielectric layer on a substrate, growing an epitaxial layer on the dielectric layer, depositing a polycrystalline diamond layer on the epitaxial layer, stripping the dielectric layer between the epitaxial layer and the substrate, recovering the substrate, and then depositing an electrode layer and a cap layer, wherein the whole preparation method is simple and efficient, and has low cost; 2) The epitaxial growth of the dielectric layer breaks lattice restriction, so that a higher-quality lattice can be obtained; 3) The dielectric layer is easy to peel off, the completed self-supporting structure of the diamond-epitaxial layer and the completed substrate can be obtained, the substrate can be reused, and the preparation cost is reduced.
Detailed Description
A method of fabricating a diamond semiconductor device, comprising the steps of:
step 1, selecting a monocrystalline silicon substrate, a sapphire substrate or a silicon carbide substrate;
step 2, depositing and growing graphene or hexagonal boron nitride on a substrate by a dry transfer method, a wet transfer method, a chemical vapor deposition method, a physical vapor deposition method or an in-situ chemical reaction method to obtain a dielectric layer with the thickness of 1-20 nm;
step 3, growing an epitaxial layer on the dielectric layer by utilizing a metal organic chemical vapor deposition method, wherein the epitaxial layer adopts any combination of one or more than one of InAlN, inAlGaN and AlGaN;
step 4, depositing a polycrystalline diamond layer on the surface of the epitaxial layer by utilizing a microwave plasma chemical vapor deposition method, wherein the thickness of the polycrystalline diamond layer is 20-200 mu m;
step 5, stripping the epitaxial layer and the dielectric layer by using a tape-assisted mechanical stripping mode, an ultrasonic-assisted liquid phase stripping mode or a gas-phase glass mode, cleaning a contact interface between the epitaxial layer and the dielectric layer, and recycling the substrate;
and 6, sequentially depositing an electrode layer and a cap layer on the epitaxial layer to form the complete gallium nitride device.
The preparation method of the invention has simple preparation process, is compatible with the existing process and has low preparation cost.
The preparation method of the invention has no limit to the crystal grain and crystal boundary of the diamond, has lower process difficulty, improves the quality of devices and the heat dissipation efficiency, has simple stripping and reduces the manufacturing cost.
When preparing the substrate, soaking the monocrystalline silicon substrate, the sapphire substrate or the silicon carbide substrate in diluted hydrochloric acid, rinsing for 30s, then cleaning with deionized water, drying with nitrogen, and finally placing in an oven to thoroughly dry the water, thereby ensuring the surface to be clean and dry.
The examples are given solely for the purpose of clarity of illustration and are not intended to be limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (8)
1. A method of fabricating a diamond semiconductor device, comprising the steps of:
s1, preparing a substrate;
s2, preparing a dielectric layer on the substrate;
s3, growing an epitaxial layer on the dielectric layer;
s4, depositing a polycrystalline diamond layer on the epitaxial layer;
s5, stripping the epitaxial layer and the dielectric layer, and recycling the substrate;
and S6, sequentially depositing an electrode layer and a cap layer on the epitaxial layer.
2. A method of fabricating a diamond semiconductor device according to claim 1, wherein the substrate comprises a monocrystalline silicon substrate, a sapphire substrate, and a silicon carbide substrate.
3. The method for manufacturing a diamond semiconductor device according to claim 1, wherein the dielectric layer is graphene or hexagonal boron nitride.
4. A method of fabricating a diamond semiconductor device according to claim 1, wherein the dielectric layer is grown on the substrate by one or more of dry transfer, wet transfer, chemical vapor deposition, physical vapor deposition or in situ chemical reaction.
5. A method of fabricating a diamond semiconductor device according to claim 1, wherein in step 3, an epitaxial layer is grown on the dielectric layer by metal organic chemical vapor deposition.
6. The method of manufacturing a diamond semiconductor device according to claim 1, wherein the epitaxial layer is any combination of one or more of InAlN, inAlGaN and AlGaN.
7. A method of manufacturing a diamond semiconductor device according to claim 1, wherein in step 4, a polycrystalline diamond layer is deposited by microwave plasma chemical vapor deposition.
8. A method of manufacturing a diamond semiconductor device according to claim 1, wherein the peeling method in step 5 comprises mechanical peeling assisted by an adhesive tape, ultrasonic-assisted liquid-phase peeling, and gas-phase peeling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311675682.1A CN117672824A (en) | 2023-12-08 | 2023-12-08 | Preparation method of diamond semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311675682.1A CN117672824A (en) | 2023-12-08 | 2023-12-08 | Preparation method of diamond semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117672824A true CN117672824A (en) | 2024-03-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311675682.1A Pending CN117672824A (en) | 2023-12-08 | 2023-12-08 | Preparation method of diamond semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117672824A (en) |
-
2023
- 2023-12-08 CN CN202311675682.1A patent/CN117672824A/en active Pending
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