CN117661104A - Comb-shaped seed crystal and application thereof - Google Patents
Comb-shaped seed crystal and application thereof Download PDFInfo
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- CN117661104A CN117661104A CN202311658218.1A CN202311658218A CN117661104A CN 117661104 A CN117661104 A CN 117661104A CN 202311658218 A CN202311658218 A CN 202311658218A CN 117661104 A CN117661104 A CN 117661104A
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- 239000013078 crystal Substances 0.000 title claims abstract description 247
- 238000000034 method Methods 0.000 claims abstract description 48
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 46
- 230000008569 process Effects 0.000 claims abstract description 27
- 238000010899 nucleation Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 18
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 12
- 230000006698 induction Effects 0.000 claims description 11
- 238000011049 filling Methods 0.000 claims description 8
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- 238000002360 preparation method Methods 0.000 abstract description 4
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
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- 230000006978 adaptation Effects 0.000 description 1
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- 230000033228 biological regulation Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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Abstract
The invention belongs to the technical field of semiconductor material preparation, and particularly relates to comb-shaped seed crystals and application thereof. The comb-shaped seed crystal comprises: seed crystal pole, seed crystal main part and seed crystal tooth, seed crystal main part one end is equipped with the seed crystal pole, and the other end is equipped with the seed crystal tooth, and the quantity of seed crystal tooth is not less than 2. The comb-shaped seed crystal provided by the invention is used as a seeding material in the gallium oxide crystal grown by a gallium oxide guided mode method, and can realize multipoint parallel seeding, necking and shouldering through seed crystal teeth of the comb-shaped seed crystal, so that the time of a key growth process is shortened, the phenomenon that volatile matters influence the shouldering growth at a solid-liquid interface is avoided, the occurrence probability of crystal growth defects is reduced, and the crystal growth quality and efficiency are improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor material preparation, and particularly relates to comb-shaped seed crystals and application thereof.
Background
Gallium oxide (Ga) 2 O 3 ) Is an ultra-wide band-gap semiconductor material, and has large band gap (4.9 eV), high breakdown field strength (8 MV), and high electron saturation migration rate (2×10) 7 cm/s), high atomic displacement energy (Ga atomic displacement energy 25eV, O atomic displacement energy 28 eV) and large excellent value of bar Li Jia (3214), and has great application potential in the fields of ultra-sensitive solar blind ultraviolet detection and high-power electronic power devices. The growth method of the gallium oxide single crystal material mainly comprises a flame melting method, a lifting method, a light floating zone method, a guided mode method and a Bridgman method, wherein the guided mode method is the main stream technology for the current commercial production of the gallium oxide single crystal. The guided mode method is a mature single crystal preparation technology and is widely applied to the mass production of high-temperature crystals such as sapphire and the like.
The gallium oxide crystal guided-mode growth method comprises the processes of filling, evacuating, inflating, heating, material melting, seeding, necking, shouldering, growing, pulling-off, cooling and the like, wherein the seeding, necking and shouldering processes are the most important. The specificity of the guided mode growth of gallium oxide crystal exists, and the gallium oxide can generate multistage decomposition reaction due to the temperature of 1800 ℃ in the growth process
Producing GaO, ga 2 Volatile intermediate impurity products such as O and Ga. In the crystal shouldering process, multi-stage decomposition such as GaO, ga is generated at high temperature 2 The intermediate products such as O, ga and the like are extremely easy to volatilize and adhere to the solid-liquid interface of the iridium die mouth, so that defects such as mixed crystals and cracks are generated, and the growth quality of crystals is seriously affected. In addition, the shouldering process of the crystal is realized by regulating and controlling the temperature change through the power of the coil, and is influenced by the power parameter and the thermal field environment together, if the temperature regulation and control do not accord with the crystalThe defects such as twin crystal or crack are easy to cause in the growth temperature region, which is unfavorable for controlling the crystal quality.
Therefore, the shouldering process is closely related to the occurrence probability of crystal defects, and the quality of the finally grown crystal with the constant diameter can be directly affected; and with the commercial development of gallium oxide single crystals, the growth of wide-diameter thick embryo crystals becomes a necessary trend, the shouldering time is further prolonged, and the crystal defects caused by the long shouldering time also inevitably severely restrict the product yield.
Disclosure of Invention
Aiming at the problems, one of the purposes of the invention is to provide a comb-shaped seed crystal, based on which, the multi-point parallel seeding, necking and shouldering in the gallium oxide crystal growth process by a gallium oxide guided-mode method can be realized through seed crystal teeth of the comb-shaped seed crystal, so that the problems of twin crystals and cracks in the shouldering process are solved; in addition, the probability of volatiles adhering to the mold surface can be reduced by shortening the shouldering time.
In order to achieve the above purpose, the present invention may adopt the following technical scheme:
in one aspect, the invention provides a comb seed comprising: seed crystal pole, seed crystal main part and seed crystal tooth, seed crystal main part one end is equipped with the seed crystal pole, and the other end is equipped with the seed crystal tooth, and the quantity of seed crystal tooth is not less than 2.
Further, the seed crystal teeth are equidistantly distributed.
Further, the central axis of the seed rod and the central axis of the seed body are in the same straight line.
Further, the seed crystal body is isosceles triangle.
Further, when the seed crystal main body can be in an isosceles triangle shape, the included angle between the seed crystal rod and the seed crystal main body is 30-60 degrees.
Further, the length of the seed rod is more than or equal to 10mm, and the width is more than or equal to 3mm; the length of the seed crystal main body is more than or equal to 10mm, and the maximum width is 20-165 mm; the length of the tooth-shaped seed crystal is 5 mm-30 mm, and the width is more than or equal to 3mm.
Further, the maximum width of the seed crystal main body is smaller than the length of the iridium mold, and the maximum thickness of the seed crystal teeth is smaller than the width of the iridium mold.
The invention also provides an application of the comb-shaped seed crystal as a seeding material in gallium oxide crystal growth by a gallium oxide guided-mode method.
Further, the above application includes: (1) Mounting comb-shaped seed crystals on seed rods, closing a cavity door, evacuating to a background cavity pressure of 0.1 Pa-10 Pa, filling protective atmosphere to atmospheric pressure, and then raising the power of an induction coil to heat the iridium crucible so as to completely melt gallium oxide raw materials; (2) Lifting the power of the coil by 5% -10%, slowly lowering the seed crystal after constant temperature, enabling seed crystal teeth of the comb-shaped seed crystal to contact with the melt liquid surface on the surface of the die, slowly lifting the comb-shaped seed crystal at a speed of 5-20 mm/h after staying for 5-15 min, and completing the multipoint parallel seeding and necking processes of the comb-shaped seed crystal; (3) The coil power is reduced by 3% -15%, the multi-point shouldering process of the comb-shaped seed crystal is carried out, the lifting speed is reduced to 3-10 mm/h in the shouldering contact stage of each crystal column, the high-temperature welding of the multi-point shouldering crystal is completed, and the width of the crystal is enabled to fill the whole die; (4) Reducing the power of the coil by 3-10% again, and recovering the lifting speed of the seed crystal to be 5-20 mm/h, so that the crystal enters the equal-diameter growth until the gallium oxide raw material is exhausted; (5) Pulling off the single crystal, separating the grown single crystal from the iridium mold, stopping comb-shaped seed crystal pulling, setting the power of the induction coil to be 0 within 10 hours, and taking the single crystal after the furnace body is cooled to room temperature and the cavity is opened, namely the gallium oxide crystal.
The beneficial effects of the invention at least comprise: the comb-shaped seed crystal provided by the invention is used as a seeding material in the gallium oxide crystal grown by a gallium oxide guided mode method, and can realize multipoint parallel seeding, necking and shouldering through seed crystal teeth of the comb-shaped seed crystal, so that the time of a key growth process is shortened, the phenomenon that volatile matters influence the shouldering growth at a solid-liquid interface is avoided, the occurrence probability of crystal growth defects is reduced, the defects of mixed crystals, twin crystals and cracks are reduced, and the crystal growth quality and efficiency are improved.
Drawings
FIG. 1 is a schematic view of a comb-like seed crystal structure according to the present invention;
FIG. 2 is a schematic flow diagram of multipoint parallel seeding, necking, shouldering and the like in the gallium oxide crystal growing process by the gallium oxide guided mode method;
in the figure, 001: seed rods; 002: a seed body; 003: seed crystal teeth.
Fig. 3 is a wafer substrate processed with a high quality 4 inch gallium oxide single crystal grown with comb-shaped seed crystals.
FIG. 4 is a drawing of a 4 inch gallium oxide boule grown with a conventional bar seed with significant impurity and crack defects.
Detailed Description
The examples are presented for better illustration of the invention, but the invention is not limited to the examples. Those skilled in the art will appreciate that various modifications and adaptations of the embodiments described above are possible in light of the above teachings and are intended to be within the scope of the invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. Unless the context clearly differs, singular forms of expression include plural forms of expression. As used herein, it is understood that terms such as "comprising," "having," "including," and the like are intended to indicate the presence of features, numbers, operations, materials, or combinations. The terms of the present invention are disclosed in the specification and are not intended to exclude the possibility that one or more other features, numbers, operations, materials or combinations thereof may be present or may be added. As used herein, "/" may be interpreted as "and" or "as appropriate.
Referring to fig. 1, an embodiment of the present invention provides a comb-shaped seed crystal, including: seed crystal pole, seed crystal main part and seed crystal tooth, seed crystal main part one end is equipped with the seed crystal pole, and the other end is equipped with the seed crystal tooth, and the quantity of seed crystal tooth is not less than 2.
The comb-shaped seed crystal is used as a seeding material, and the multipoint parallel seeding, necking and shouldering of the single crystal growth process of the guided mode method can be realized through the seed crystal teeth, so that the time of a key process is effectively shortened, the probability of intermediate product volatilization and power/temperature fluctuation triggering defect generation is reduced, and the single crystal growth efficiency and quality are improved.
It should be noted that the seed rod, the seed body and the seed teeth of the comb-shaped seed crystal of the present invention may or may not be integral. Preferably integral, the crystals are processed by existing processes into the shape of the comb seed of the present invention. In addition, it should be understood that the three structures, if not integral, may also be fixedly connected together by the prior art.
In some embodiments, the seed teeth may be equidistantly spaced from each other. As described above, the number of the seed crystal teeth is not less than 2, and the seed crystal teeth are preferably distributed at equal intervals. The equidistant distribution has the advantages that the shouldering time of each seed crystal tooth is the same, if the spacing of the seed crystal teeth is unequal, part of the shouldering time is short, part of the shouldering time is long, the shouldering power is different from the power of equal-diameter growth, and the crystal growth quality is affected.
In some embodiments, the central axis of the seed rod may be collinear with the central axis of the seed body. It should be noted that the seed rod may be in the middle of the seed body, where the seed rod and the seed body form a symmetrical structure; if the seed crystal teeth are equidistantly distributed, the seed crystal rod, the seed crystal main body and the comb-shaped seed crystals formed by the seed crystal teeth are in symmetrical structures, namely the central axis of the seed crystal rod and the central axis of the seed crystal main body are in the same straight line.
In some embodiments, the seed body may have an isosceles triangle shape. It should be noted that the shape of the seed crystal body may be any of various shapes, such as square, circular, polygonal, or triangular, wherein a triangle is preferred, and an isosceles triangle is more preferred, and it should be understood that an isosceles triangle is also one of isosceles triangles, that is, an isosceles triangle in the present invention includes an equilateral triangle. In addition, the isosceles triangle has the advantage that the comb seed crystals formed by the seed crystal rod, the seed crystal main body and the seed crystal teeth are in a symmetrical structure, so that the synchronous proceeding and ending of the multi-point shouldering are realized.
In some embodiments, when the seed crystal body may have an isosceles triangle shape, the angle between the seed rod and the seed crystal body may be 30 ° to 60 °. When the seed crystal body may have an isosceles triangle shape, the angle between the seed rod and the seed crystal body may be arbitrarily selected, preferably 30 ° to 60 °, such as 35 °, 40 °, 45 °, 50 ° or 55 °. In addition, the advantages of 30-60 degrees are that the length and width of the seed crystal main body are moderate, the seed crystal main body is easy to damage during installation if too small, and the waste of crystals is caused if too large.
In some specific embodiments, the length of the seed rod is equal to or more than 10mm, and the width is equal to or more than 3mm; the length of the seed crystal main body is more than or equal to 10mm, and the maximum width is 20-165 mm; the length of the tooth-shaped seed crystal is 5 mm-30 mm, and the width is more than or equal to 3mm. It should be noted that the length of the seed crystal main body is the height of an isosceles triangle, the seed crystal main body is convenient to process when the length is more than or equal to 10mm, and is not easy to damage during installation.
It should be noted that, the maximum width of the seed crystal body includes a case where the widths are equal, for example, when the seed crystal body is square or rectangular, the maximum width is also the minimum width.
In some embodiments, the comb seed may preferably be: the seed crystal main body is isosceles triangle, the length of the seed crystal rod can be 10mm, and the width is 3mm; the length of the seed crystal main body is 10mm, and the maximum width is 20mm; the length of the tooth-shaped seed crystal is 15mm, and the width is 3mm.
In some embodiments, the maximum width of the seed body is less than the length of the iridium mold, and the maximum thickness of the seed teeth is less than the width of the iridium mold. For the subsequent requirement of the guiding mold, the maximum width of the seed crystal main body is smaller than the length of the iridium mold, and the maximum thickness of the seed crystal teeth is smaller than the width of the iridium mold.
Another embodiment of the present invention provides an application of the comb-shaped seed crystal as a seeding material in growing gallium oxide crystals by a gallium oxide guided-mode method.
It should be noted that the gallium oxide crystal growth by the gallium oxide guided-mode method is a known method in the art, such as the publication CN114086244A, CN112981522A, US2021062359A1, JP2001151595A, JPs59121191a, and the like. According to the invention, the comb-shaped seed crystal is used as a seeding material, and the multipoint parallel seeding, necking and shouldering of the single crystal growth process of the guided mode method can be realized through the seed crystal teeth, so that the time of a key process is effectively shortened, the probability of triggering defect generation by intermediate product volatilization and power/temperature fluctuation is reduced, and the single crystal growth efficiency and quality are improved.
In some embodiments, the above-described applications include: (1) Mounting comb-shaped seed crystals on seed rods, closing a cavity door, evacuating to a background cavity pressure of 0.1 Pa-10 Pa, filling protective atmosphere to atmospheric pressure, and then raising the power of an induction coil to heat the iridium crucible so as to completely melt gallium oxide raw materials; (2) Lifting the power of the coil by 5% -10%, slowly lowering the seed crystal after constant temperature, enabling seed crystal teeth of the comb-shaped seed crystal to contact with the melt liquid surface on the surface of the die, slowly lifting the comb-shaped seed crystal at a speed of 5-20 mm/h after staying for 5-15 min, and completing the multipoint parallel seeding and necking processes of the comb-shaped seed crystal; (3) The coil power is reduced by 3% -15%, the multi-point shouldering process of the comb-shaped seed crystal is carried out, the lifting speed is reduced to 3-10 mm/h in the shouldering contact stage of each crystal column, the high-temperature welding of the multi-point shouldering crystal is completed, and the width of the crystal is enabled to fill the whole die; (4) Reducing the power of the coil by 3-10% again, and recovering the lifting speed of the seed crystal to be 5-20 mm/h, so that the crystal enters the equal-diameter growth until the gallium oxide raw material is exhausted; (5) Pulling off the single crystal, separating the grown single crystal from the iridium mold, stopping comb-shaped seed crystal pulling, setting the power of the induction coil to be 0 within 10 hours, and taking the single crystal after the furnace body is cooled to room temperature and the cavity is opened, namely the gallium oxide crystal.
For a better understanding of the present invention, the content of the present invention is further elucidated below in connection with the specific examples, but the content of the present invention is not limited to the examples below.
Example 1 growth of 4 inch gallium oxide single crystals using comb seed crystals
(1) Processing comb seed crystals: and selecting large-size gallium oxide single crystals grown by the strip-shaped seed crystals, and processing the large-size gallium oxide single crystals into comb-shaped seed crystals. Wherein, the length of the seed rod of the comb seed crystal is 20mm, and the width is 5mm; the seed crystal main body is in an isosceles triangle shape, the included angle between the seed crystal main body and the seed crystal rod is 30 degrees, the length of the seed crystal main body is 30mm, and the width of the seed crystal main body is 100mm; the seed crystal teeth are 4, the length of the seed crystal teeth is 20mm, the width of the seed crystal teeth is 5mm, the seed crystal teeth are distributed at one end of the seed crystal main body at equal intervals, the interval is 20mm, and the thickness of the whole comb-shaped seed crystal is 4mm.
(2) Raw material treatment and filling: preparing gallium oxide powder with the purity of 99.99 percent and the particle size of 50-100 microns into cylindrical blocks by using a target pressing machine, and then treating the cylindrical blocks in a drying oven at the temperature of 250 ℃ for 2 hours; and filling the block cylindrical gallium oxide raw material into an iridium crucible, and filling into a single crystal furnace.
(3) Installing seed crystal and heating melting stock: the comb-shaped seed crystal is arranged on a seed rod of a 4-inch guided mode growth furnace, so that the comb-shaped seed crystal vertically faces to the iridium crucible below; closing a cavity door, and vacuumizing until the background cavity pressure is 1Pa; then, flushing protective atmosphere carbon dioxide to atmospheric pressure; and starting a heating mode, and increasing the power of the induction coil to heat the iridium crucible until the gallium oxide raw material is completely melted.
(4) Seeding, necking, shouldering, high-temperature welding and constant-diameter growth: after the raw materials are completely melted for 2 hours, the power of the induction coil is increased by 5 percent, and the seed crystal is slowly lowered after the cavity is at constant temperature, so that the tail part of the comb-shaped seed crystal is contacted with the liquid level of the melt. The comb-shaped seed crystal stays for 10min in contact with the liquid surface, so that the tooth-shaped structure is fully and uniformly contacted and fused with the liquid surface of the gallium oxide melt; and then slowly lifting the seed crystal at a lifting speed of 10mm/h to realize multipoint parallel seeding and necking of the comb-shaped seed crystal. Further reducing the power of the induction coil by 7%, performing multi-point shouldering process of comb-shaped seed crystals, and reducing the lifting speed to 5mm/h in the shouldering contact stage of each crystal column, so as to realize high-temperature welding of multi-point shouldering crystals, and fully filling the whole die with the width of the crystals; and reducing the power of the induction coil by 7 percent again, recovering the lifting speed of the seed crystal to be 10mm/h, enabling the crystal to enter an equal-diameter growth stage, and stabilizing the growth until the gallium oxide raw material is exhausted.
(5) Pulling off, cooling and taking out crystals: monitoring the growth condition of the gallium oxide single crystal through an observation window and a CCD monitor, stopping the pulling of a seed rod after the gallium oxide raw material is exhausted and the grown single crystal is completely separated from the die, and realizing the pulling-off of the single crystal and the die; setting the power of the induction coil to be reduced to 0 within 10 hours, naturally cooling the furnace body to room temperature, opening a cavity, taking out single crystals, and carrying out crystal quality identification.
In summary, by the above-described comb-shaped seed crystal and single crystal growth method, the 4 inch single crystal substrate prepared by the present invention has no obvious defects of impurity, twinning and cracking in the processes of seeding, necking and shouldering for 1.5 hours, as shown in fig. 3.
Comparative example 1 preparation of gallium oxide single crystal from existing seeding material
The growth of gallium oxide single crystal by the guided mode method is carried out by using a strip seed crystal with the length of 50mm, the width of 5mm and the thickness of 4mm, and the growth process and the parameter setting are as in example 1; in contrast, the bar-shaped seed crystal is single-point seeding, necking and shouldering, and the seed crystal is grown to completely fill the whole 4-inch die, which takes 3 hours.
The 4-inch single crystal prepared had significant impurity and crack defects during shouldering, as shown in fig. 4.
By comparing the above example 1 with the comparative example 1, it is obvious that the comb-shaped seed crystal and the multipoint parallel seeding, necking and shouldering growth method provided by the invention can effectively shorten the time of the key growth process (shorten 1/2), effectively reduce the probability of occurrence of defects caused by volatile matters, and improve the growth efficiency and quality of crystals.
Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present invention, which is intended to be covered by the scope of the claims of the present invention.
Claims (10)
1. A comb seed crystal, comprising: seed crystal pole, seed crystal main part and seed crystal tooth, seed crystal main part one end is equipped with the seed crystal pole, and the other end is equipped with the seed crystal tooth, and the quantity of seed crystal tooth is not less than 2.
2. The comb seed of claim 1, wherein the seed teeth are equidistantly spaced apart.
3. A comb seed according to claim 1 or claim 2, wherein the central axis of the seed rod is collinear with the central axis of the seed body.
4. A comb seed crystal according to claim 3, wherein the seed crystal body has an isosceles triangle shape.
5. The comb seed crystal of claim 4, wherein the seed rod is at an angle of 30 ° to 60 ° to the seed body.
6. The comb seed crystal according to claim 1, 2, 4 or 5, wherein the length of the seed rod is not less than 10mm and the width is not less than 3mm; the length of the seed crystal main body is more than or equal to 10mm, and the maximum width is 20-165 mm; the length of the tooth-shaped seed crystal is 5 mm-30 mm, and the width is more than or equal to 3mm.
7. A comb seed according to claim 3, wherein the length of the seed rod is not less than 10mm and the width is not less than 3mm; the length of the seed crystal main body is more than or equal to 10mm, and the maximum width is 20-165 mm; the length of the tooth-shaped seed crystal is 5 mm-30 mm, and the width is more than or equal to 3mm.
8. The comb seed crystal of claim 1, 2, 4, 5, or 7, wherein the maximum width of the seed body is less than the length of the iridium mold and the maximum thickness of the seed teeth is less than the width of the iridium mold.
9. Use of a comb seed according to any one of claims 1 to 8 as seeding material for gallium oxide guided-mode growth of gallium oxide crystals.
10. The use according to claim 9, characterized in that it comprises: (1) Mounting comb-shaped seed crystals on seed rods, closing a cavity door, evacuating to a background cavity pressure of 0.1 Pa-10 Pa, filling protective atmosphere to atmospheric pressure, and then raising the power of an induction coil to heat the iridium crucible so as to completely melt gallium oxide raw materials; (2) Lifting the power of the coil by 5% -10%, slowly lowering the seed crystal after constant temperature, enabling seed crystal teeth of the comb-shaped seed crystal to contact with the melt liquid surface on the surface of the die, slowly lifting the comb-shaped seed crystal at a speed of 5-20 mm/h after staying for 5-15 min, and completing the multipoint parallel seeding and necking processes of the comb-shaped seed crystal;
(3) The coil power is reduced by 3% -15%, the multi-point shouldering process of the comb-shaped seed crystal is carried out, the lifting speed is reduced to 3-10 mm/h in the shouldering contact stage of each crystal column, the high-temperature welding of the multi-point shouldering crystal is completed, and the width of the crystal is enabled to fill the whole die; (4) Reducing the power of the coil by 3-10% again, and recovering the lifting speed of the seed crystal to be 5-20 mm/h, so that the crystal enters the equal-diameter growth until the gallium oxide raw material is exhausted; (5) Pulling off the single crystal, separating the grown single crystal from the iridium mold, stopping comb-shaped seed crystal pulling, setting the power of the induction coil to be 0 within 10 hours, and taking the single crystal after the furnace body is cooled to room temperature and the cavity is opened, namely the gallium oxide crystal.
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| CN202311658218.1A CN117661104A (en) | 2023-12-06 | 2023-12-06 | Comb-shaped seed crystal and application thereof |
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