CN117661100A - Device for measuring liquid mouth distance, liquid mouth distance measuring method and single crystal furnace - Google Patents

Device for measuring liquid mouth distance, liquid mouth distance measuring method and single crystal furnace Download PDF

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Publication number
CN117661100A
CN117661100A CN202211086274.8A CN202211086274A CN117661100A CN 117661100 A CN117661100 A CN 117661100A CN 202211086274 A CN202211086274 A CN 202211086274A CN 117661100 A CN117661100 A CN 117661100A
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China
Prior art keywords
liquid
groove
heat shield
distance
crucible
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CN202211086274.8A
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Chinese (zh)
Inventor
夏超
段丽超
莫华龙
王靖超
肖明
郭力
郭右利
贺峰
杨福军
武锴
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Huaping Longi Silicon Materials Co Ltd
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Huaping Longi Silicon Materials Co Ltd
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Priority to CN202211086274.8A priority Critical patent/CN117661100A/en
Publication of CN117661100A publication Critical patent/CN117661100A/en
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/14Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present disclosure relates to a device for liquid gap measurement, a liquid gap measurement method, and a single crystal furnace, the device for liquid gap measurement including: the crucible contains silicon solution, a heat shield is arranged above the crucible, the lower surface of the heat shield is horizontally arranged, a groove is formed in the lower surface, the groove and the outer contour of the lower surface are concentrically arranged, and an image acquisition device is arranged above the heat shield and used for picking up an image of a reflection formed by the lower surface and the groove on the liquid surface of the silicon solution. Through above-mentioned technical scheme, the device, the liquid mouth distance measuring method and the single crystal growing furnace that are used for liquid mouth distance measuring that this disclosure provided can solve the heat shield lower limb and fall the shadow blurring in the silicon solution, can't be by the technical problem of accurate capture.

Description

Device for measuring liquid mouth distance, liquid mouth distance measuring method and single crystal furnace
Technical Field
The disclosure relates to the technical field of single crystal manufacturing, in particular to a device for measuring liquid gap, a liquid gap measuring method and a single crystal furnace.
Background
With the continuous development of world economy, the modern construction has a growing demand for high-efficiency energy. Photovoltaic power generation is increasingly being regarded as a green energy source and one of the main energy sources for sustainable development of human beings, and is being greatly developed by people in all countries of the world. With the continuous decrease of the photovoltaic power generation cost, the photovoltaic industry has a wider market space.
The standard operation requirement is extremely high in the modern and automatic single crystal manufacturing process, the standard requirement on the distance from the lower edge of the heat shield to the liquid level (namely the liquid port distance) in the single crystal furnace is higher, and the standard liquid port distance can reduce the variable in the single crystal manufacturing process, so that the single crystal growth is facilitated. The liquid gap during temperature regulation and seeding is called as the seeding gap, and the standard and uniform seeding gap is an extremely important factor in the crystal pulling process in the single crystal manufacturing process.
The prior art image-based crucible position control device and method generally realize constant crucible position in the single crystal growth process by monitoring the reflection of the lower edge of the guide cylinder and the lower edge of the guide cylinder in the silicon melt. In the prior art, the liquid port distance is also measured and calculated mostly through the heat shield lower edge shot by the image acquisition device and the image of the heat shield lower edge inverted image in the silicon solution, however, the heat shield lower edge inverted image in the silicon solution is fuzzy and cannot be accurately captured, so that the measuring precision of the liquid port distance is low, the actual liquid port distance and the standard liquid port distance have larger deviation, the requirement of high-precision adjustment of crystal pulling process parameters cannot be met, and the quality of the finally prepared silicon wafer material cannot meet the increasingly high requirements of the market nowadays.
Disclosure of Invention
The invention aims to provide a device for measuring liquid mouth distance, a liquid mouth distance measuring method and a single crystal furnace, which are used for solving the technical problems that the reflection of the lower edge of a heat shield in a silicon solution is fuzzy and cannot be accurately captured.
To achieve the above object, according to a first aspect of the present disclosure, there is provided an apparatus for liquid port distance measurement, comprising: the crucible contains silicon solution, a heat shield is arranged above the crucible, the lower surface of the heat shield is horizontally arranged, a groove is formed in the lower surface, the groove and the outer contour of the lower surface are concentrically arranged, and an image acquisition device is arranged above the heat shield and used for picking up an image of a reflection formed by the lower surface and the groove on the liquid surface of the silicon solution.
Optionally, the apparatus further comprises: and the processor is in communication connection with the image acquisition device and is used for calculating the actual liquid port distance H according to the image.
Alternatively, the lower surface is configured as a ring-shaped structure, and the depth q=r of the groove c -R b =C×(R b -R a ) Wherein R is a For the radius of the inner ring of the annular structure, R b R is the radius of the inner side edge of the groove c R is the radius of the outer edge of the groove b -R a 2mm to 5mm, c=1 or 2.
Optionally, the central angle theta of the groove x 120 ° to 180 °.
Optionally, the apparatus further comprises a liquid gap adjustment mechanism capable of moving the crucible up and down, the liquid gap adjustment mechanism being in communication with the processor, the processor being further configured to: when the actual liquid port distance H is smaller than the standard liquid portDistance H 0 When the actual liquid port distance H is larger than the standard liquid port distance H, the liquid port distance adjusting mechanism is controlled to move the crucible downwards 0 And when the crucible is moved upwards, the liquid opening distance adjusting mechanism is controlled.
According to a second aspect of the present disclosure, there is provided a liquid port distance measurement method for the apparatus for liquid port distance measurement, the apparatus for liquid port distance measurement comprising: a crucible containing a silicon solution and a heat shield arranged above the crucible, wherein the lower surface of the heat shield is horizontally arranged, the lower surface is constructed into an annular structure, a groove is formed in the lower surface, and the groove and the annular structure are concentrically arranged; the measuring method comprises the following steps: an image acquisition device is arranged above the heat shield and is used for picking up an image of a reflection formed by the annular structure and the groove on the liquid level of the silicon solution; and calculating the actual liquid port distance H according to the image.
According to a third aspect of the disclosure, there is also provided a single crystal furnace, including the apparatus for measuring liquid gap in the above technical scheme.
Through above-mentioned technical scheme, in the device for liquid mouth is apart from measuring that this disclosure provided, be provided with the recess on the lower surface of heat shield, because this recess can form clear back image at the liquid level, consequently, the back image of this recess can have clear profile in the image that image acquisition device picked up to improve actual liquid mouth and apart from the calculation accuracy of H. In the liquid mouth distance measuring method provided by the disclosure, the groove is formed in the lower surface of the heat shield, clear reflection can be formed on the liquid level, the image acquisition device is arranged above the heat shield, the image of the reflection formed on the liquid level by the heat shield can be picked up, the reflection of the annular structure and the groove in the image picked up by the image acquisition device can have clear outline, and the calculation accuracy of the actual liquid mouth distance H can be improved according to the outline. The single crystal furnace provided by the disclosure has the same technical effects as the device for measuring the liquid gap in the above technical scheme, and in order to avoid unnecessary repetition, a detailed description is omitted herein.
Additional features and advantages of the present disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate the disclosure and together with the description serve to explain, but do not limit the disclosure. In the drawings:
FIG. 1 is a schematic diagram of an apparatus for liquid gap measurement in an embodiment of the present disclosure;
FIG. 2 is a schematic view of a heat shield in an embodiment of the present disclosure;
FIG. 3 is a schematic view of an image of a heat shield in a liquid level captured by an image capture device in an embodiment of the present disclosure;
fig. 4 is a flow chart of a method of measuring a liquid gap in an embodiment of the present disclosure.
Description of the reference numerals
1-heat shield, 11-annular structure, 111-inner ring, 112-outer ring, 12-groove, 121-inner side edge, 122-outer side edge, 2-crucible, 21-liquid level, 3-image acquisition device, 31-shooting center.
Detailed Description
Specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the disclosure, are not intended to limit the disclosure.
In the present disclosure, unless otherwise indicated, terms such as "upper and lower" are used to refer generally to the upper and lower directions of a single crystal furnace in a normal use state, and "inner and outer" refer to the inner and outer directions with respect to the outline of the corresponding component itself, referring to the drawing plane direction of fig. 1. In addition, the following description, when taken in conjunction with the accompanying drawings, wherein like numerals in the various figures refer to the same or similar elements unless otherwise specified.
According to a first aspect of embodiments of the present disclosure, there is provided an apparatus for measuring a liquid gap, as shown with reference to fig. 1 and 2, the apparatus for measuring a liquid gap may include a heat shield 1, a crucible 2, and an image pickup device 3, wherein the crucible 2 contains a silicon solution therein, the heat shield 1 is disposed above the crucible 2, a lower surface of the heat shield 1 is horizontally disposed to be parallel to a liquid surface 21 of the silicon solution, and a groove 12 is provided on the lower surface, the groove 12 and an outer contour of the lower surface may be concentrically disposed, and the image pickup device 3 may be disposed above the heat shield 1 for picking up an image of a reflection formed by the lower surface and the groove 12 at the liquid surface 21.
Through the above technical solution, in the device for measuring a liquid gap provided by the present disclosure, the groove 12 is disposed on the lower surface of the heat shield 1, and since the groove 12 can form a clear reflection at the liquid surface 21, the reflection of the groove 12 in the image picked up by the image pickup device 3 can have a clear contour, so as to improve the calculation accuracy of the actual liquid gap H.
Referring to fig. 2, the lower surface of the heat shield 1 is generally configured as a ring-shaped structure 11, and in order to ensure that the outline formed in the image by the reflection of the groove 12 has sufficient sharpness, the depth q=r of the groove 12 c -R b =C×(R b -R a ) Wherein R is a Radius of inner ring 111 of annular structure 11, R b Is the radius of the inner edge 121 of the groove 12, R c Is the radius of the outside edge 122 of the groove 12, R b -R a 2mm to 5mm, c=1 or 2.
Referring to fig. 2, in order to ensure that the contour formed in the image by the reflection of the groove 12 has a sufficient length, the central angle θ of the groove 12 x May be 120 ° to 180 °.
In addition, the device for measuring the liquid gap may further comprise a processor (not shown), which may be in communication with the image acquisition device 3, the processor being capable of calculating the actual liquid gap H from the image picked up by the image acquisition device 3.
Referring to FIG. 1, θ 1 Is the angle between the line connecting the shooting center 31 of the image acquisition device 3 and the point on the inner ring 111 of the annular structure 11 furthest from the shooting center 31 and the vertical direction, wherein the cotθ 1 =(H 1 +2H)/(W 1 +R a +W 2 +W 3 )=H 1 /(W 1 +R a ) Thus, the actual liquid gap H= [ (W) 1 +R a +W 2 +W 3 )×H 1 /(W 1 +R a )-H 1 ]/2,W 1 R is the horizontal distance between the shooting center 31 of the image acquisition device 3 and the center of the circle of the annular structure 11 a Radius, W, of inner ring 111 of annular structure 11 2 W is the distance between the inner side edge 121 of the groove 12 and the inner ring 111 2 +W 3 In order to observe the distance between the intersection point of the imaging plane where the reflection exists and the point B of the line-of-sight extension line of the point A of the imaging center 31, the point A is the point on the inner ring 111 farthest from the imaging center 31, the point B is the reflection of the point A, and H 1 For the vertical distance between the photographing center 31 and the ring structure 11, the processor may be configured to be able to determine the vertical distance according to the formula h= [ (W) 1 +R a +W 2 +W 3 )×H 1 /(W 1 +R a )-H 1 ]And (2) calculating the actual liquid port distance H.
Due to W 3 Cannot be derived by direct measurement, in order to calculate W 3 Referring to fig. 3, in the image picked up by the image pickup device 3, the reflection of the inner side edge 121 of the groove 12 corresponds to the first contour line L1, the contour of the inner ring 111 corresponds to the second contour line L2, and the processor may be configured to be able to follow the first contour line L 1 And a second contour line L 2 Distance calculation W between 3 For a specific calculation method, reference may be made to patent application publication number CN112281208A, and in a specific embodiment of the present disclosure, reference is made to fig. 3, it will be appreciated that the first contour line L is followed 1 Is defined by a radial first contour line L 1 Upper and second contour lines L 2 The two points with the largest upper distance are respectively n 1 And n 2 ,n 1 Corresponding to the reflection, n, of a point on the inner edge 121 furthest from the photographing center 31 2 Corresponding to a point on the inner ring 111 farthest from the photographing center 31, due to n 1 And n 2 There is a gap between the pixel distance d and the physical size, and therefore, the pixel distance d can be calculated by the formula W 3 Calculate w=d×s 3 Where S is a proportionality coefficient between the pixel distance and the physical size in the image picked up by the image pickup device 3, S is known.
In addition, the apparatus for measuring a liquid gap may further include a liquid gap adjusting mechanism (not shown) capable of moving the crucible 2 up and down, and the liquid gap adjusting mechanism may be communicatively connected to the processor, and the processor may be further configured to: when the actual liquid port distance H is smaller than the standard liquid port distance H 0 When the actual liquid mouth distance H is larger than the standard liquid mouth distance H, the liquid mouth distance adjusting mechanism is controlled to move the crucible 2 downwards 0 And when the crucible 2 is moved upwards by controlling the liquid opening distance adjusting mechanism. Through the cooperation of liquid mouth distance adjustment mechanism and treater, can realize the automatically regulated to liquid mouth distance, avoid the manual regulation liquid mouth distance to lead to the precision not enough.
According to a second aspect of specific embodiments of the present disclosure, there is provided a liquid port distance measurement method, which is used in the device for liquid port distance measurement in the above technical solution, and the measurement method may include the following steps:
s1: an image acquisition device 3 is arranged above the heat shield 1, and the image acquisition device 3 is used for picking up an image of a reflection formed by the annular structure 11 and the groove 12 on the liquid surface 21 of the silicon solution;
s2: and calculating the actual liquid port distance H according to the image.
Through the above technical scheme, in the liquid mouth distance measuring method provided by the disclosure, the groove 12 is arranged on the lower surface of the heat shield 1, the groove 12 can form a clear image on the liquid surface 21, the image acquisition device 3 is arranged above the heat shield 1, the image of the heat shield 1 on the liquid surface can be picked up, the image picked up by the image acquisition device 3 has a clear outline, and the calculation accuracy of the actual liquid mouth distance H can be improved according to the outline.
In step S2, it may be according to W 1 、W 2 、W 3 、R a And H 1 Calculating to obtain an actual liquid mouth distance H, wherein W 1 R is the horizontal distance between the shooting center 31 of the image acquisition device 3 and the center of the circle of the annular structure 11 a Radius, W, of inner ring 111 of annular structure 11 2 W is the distance between the inner side edge 121 of the groove 12 and the inner ring 111 2 +W 3 For the shooting center 31 to observe the point AThe distance between the intersection point of the line of sight extension line on the imaging plane where the reflection is located and the point B, the point A is the point on the inner ring 111 farthest from the shooting center 31, the point B is the reflection of the point A, and H 1 Is the vertical distance between the shooting center 31 and the annular structure 11.
Due to W 3 Cannot be derived by direct measurement, in order to calculate W 3 Step S2 may include:
s21: according to the first contour line L 1 And a second contour line L 2 Distance calculation W between 3 Wherein the first contour line L 1 Corresponding to the reflection of the inner edge 121 of the groove 12, a second contour line L 2 The contour of the inner ring 111 of the corresponding annular structure 11;
s22: according to the formula H= [ (W) 1 +R a +W 2 +W 3 )×H 1 /(W 1 +R a )-H 1 ]And (2) calculating the actual liquid port distance H.
According to the first contour line L 1 And a second contour line L 2 Distance calculation W between 3 Reference may be made to patent application publication number CN112281208A, and in particular embodiments of the present disclosure, reference is made to fig. 3, it being understood that the first contour line L is followed 1 Is defined by a radial first contour line L 1 Upper and second contour lines L 2 The two points with the largest upper distance are respectively n 1 And n 2 ,n 1 Corresponding to the reflection, n, of a point on the inner edge 121 furthest from the photographing center 31 2 Corresponding to a point on the inner ring 111 farthest from the photographing center 31, due to n 1 And n 2 There is a gap between the pixel distance d and the physical size, and therefore, the pixel distance d can be calculated by the formula W 3 Calculate w=d×s 3 Where S is a proportionality coefficient between the pixel distance and the physical size in the image picked up by the image pickup device 3, S is known.
According to a third aspect of the specific embodiments of the present disclosure, there is further provided a single crystal furnace, including a device for measuring a liquid gap in the above technical scheme.
Through the above technical scheme, the single crystal furnace provided by the disclosure has the same technical effects as the device for measuring the liquid gap in the above technical scheme, and in order to avoid unnecessary repetition, the description is omitted here.
The preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings, but the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solutions of the present disclosure within the scope of the technical concept of the present disclosure, and all the simple modifications belong to the protection scope of the present disclosure.
In addition, the specific features described in the foregoing embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, the present disclosure does not further describe various possible combinations.
Moreover, any combination between the various embodiments of the present disclosure is possible as long as it does not depart from the spirit of the present disclosure, which should also be construed as the disclosure of the present disclosure.

Claims (7)

1. An apparatus for liquid port distance measurement, comprising:
a crucible in which a silicon solution is contained,
the heat shield is arranged above the crucible, the lower surface of the heat shield is horizontally arranged, a groove is arranged on the lower surface, the groove and the outer contour of the lower surface are concentrically arranged, and
and the image acquisition device is arranged above the heat shield and is used for picking up an image of a reflection formed by the lower surface and the groove on the liquid level of the silicon solution.
2. The apparatus for liquid gap measurement according to claim 1, further comprising:
and the processor is in communication connection with the image acquisition device and is used for calculating the actual liquid port distance H according to the image.
3. The method according to claim 1Device for measuring the distance between liquid openings, characterized in that the lower surface is configured as a ring-shaped structure, the depth q=r of the groove c -R b =C×(R b -R a ) Wherein R is a For the radius of the inner ring of the annular structure, R b R is the radius of the inner side edge of the groove c R is the radius of the outer edge of the groove b -R a 2mm to 5mm, c=1 or 2.
4. A device for liquid gap measurement according to any one of claims 1 to 3, characterized in that the central angle θ of the groove x 120 ° to 180 °.
5. The apparatus for liquid gap measurement according to claim 2, further comprising a liquid gap adjustment mechanism capable of moving the crucible up and down, the liquid gap adjustment mechanism being in communication with the processor, the processor being further configured to: when the actual liquid port distance H is smaller than the standard liquid port distance H 0 When the actual liquid port distance H is larger than the standard liquid port distance H, the liquid port distance adjusting mechanism is controlled to move the crucible downwards 0 And when the crucible is moved upwards, the liquid opening distance adjusting mechanism is controlled.
6. A liquid gap measuring method, characterized in that the device for liquid gap measurement comprises:
a crucible containing a silicon solution therein, an
The heat shield is arranged above the crucible, the lower surface of the heat shield is horizontally arranged, the lower surface is constructed into an annular structure, a groove is formed in the lower surface, and the groove and the annular structure are concentrically arranged;
the measuring method comprises the following steps:
an image acquisition device is arranged above the heat shield and is used for picking up an image of a reflection formed by the annular structure and the groove on the liquid level of the silicon solution;
and calculating the actual liquid port distance H according to the image.
7. A single crystal furnace comprising the apparatus for measuring a liquid gap according to any one of claims 1 to 5.
CN202211086274.8A 2022-09-06 2022-09-06 Device for measuring liquid mouth distance, liquid mouth distance measuring method and single crystal furnace Pending CN117661100A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211086274.8A CN117661100A (en) 2022-09-06 2022-09-06 Device for measuring liquid mouth distance, liquid mouth distance measuring method and single crystal furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211086274.8A CN117661100A (en) 2022-09-06 2022-09-06 Device for measuring liquid mouth distance, liquid mouth distance measuring method and single crystal furnace

Publications (1)

Publication Number Publication Date
CN117661100A true CN117661100A (en) 2024-03-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211086274.8A Pending CN117661100A (en) 2022-09-06 2022-09-06 Device for measuring liquid mouth distance, liquid mouth distance measuring method and single crystal furnace

Country Status (1)

Country Link
CN (1) CN117661100A (en)

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