CN117660882A - Dual deposition chamber apparatus for producing silicon material - Google Patents
Dual deposition chamber apparatus for producing silicon material Download PDFInfo
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- CN117660882A CN117660882A CN202211029567.2A CN202211029567A CN117660882A CN 117660882 A CN117660882 A CN 117660882A CN 202211029567 A CN202211029567 A CN 202211029567A CN 117660882 A CN117660882 A CN 117660882A
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- wall surface
- deposition
- deposition substrate
- furnace body
- cooling jacket
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- 230000008021 deposition Effects 0.000 title claims abstract description 138
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 17
- 230000009977 dual effect Effects 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000001816 cooling Methods 0.000 claims abstract description 62
- 238000005086 pumping Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000004891 communication Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 103
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 239000011863 silicon-based powder Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 239000003570 air Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
A dual deposition chamber apparatus for producing silicon material comprises a furnace body, a cooling jacket, a deposition device and a vacuum pumping device. The cooling jacket is in communication with the furnace body, defines a space above the furnace body, and includes an opening in communication with the space. The deposition device comprises at least one first deposition substrate and at least one second deposition substrate, wherein the first deposition substrate and the second deposition substrate are arranged in the space in parallel, the first deposition substrate and the second deposition substrate are respectively provided with a first inner wall surface and a second inner wall surface which are inclined downwards relative to a vertical axis, and a non-flat area is formed on the first inner wall surface and the second inner wall surface. The vacuum pumping device is communicated with the opening of the cooling jacket.
Description
Technical Field
The present invention relates to a deposition chamber apparatus, and more particularly, to a dual deposition chamber apparatus for producing silicon materials.
Background
Silicon materials are one of the materials widely used in the semiconductor industry, wherein silicon monoxide is an important raw material for protecting insulating layers of semiconductor elements and ceramics, and silicon monoxide can also be applied to packaging materials of foods or medicines, while porous silicon materials can be applied to various fields due to unique photoelectric properties, and existing deposition chamber equipment such as taiwan patent No. TW I658002B provides a deposition substrate for depositing silicon monoxide, and can also be found in taiwan patent No. TW I723730B for depositing magnesium vapor and collecting residual porous silicon materials. Other deposition chamber equipment can also be found in U.S. Pat. Nos. 3,124,72, 7431899,2, which disclose apparatus for preparing silicon oxide powder and silicon oxide deposits, and U.S. Pat. No. 3,84,1, which discloses a process for producing silicon monoxide. However, the slow deposition speed of the deposition substrate in the deposition chamber apparatus disclosed in the above patent causes a problem of poor deposition efficiency, so how to improve the deposition efficiency of the deposition in the deposition chamber apparatus is a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to solve the problem that the production efficiency of the existing silicon material deposition equipment needs to be improved.
In order to achieve the above object, the present invention provides a dual deposition chamber apparatus for producing silicon material, comprising a furnace body, a cooling jacket, a deposition device and a vacuum pumping device. The cooling jacket is arranged above the furnace body and is communicated with the furnace body, a space is defined above the furnace body by the cooling jacket, and the cooling jacket comprises an opening communicated with the space. The deposition device comprises at least one first deposition substrate and at least one second deposition substrate, wherein the first deposition substrate and the second deposition substrate are arranged in parallel in the space between the upper part of the furnace body and the cooling jacket, the first deposition substrate and the second deposition substrate are respectively provided with a first inner wall surface and a second inner wall surface which are inclined downwards relative to a vertical axis, a non-flat area is formed on the first inner wall surface and the second inner wall surface, and the non-flat area is a structure which is protruded or recessed relative to a plane of the first inner wall surface and the second inner wall surface respectively. The vacuum pumping device is communicated with the opening of the cooling jacket.
In one embodiment, the apparatus further comprises at least one baffle disposed in the space between the opening of the cooling jacket and the deposition apparatus.
In one embodiment, the structure is one or more bumps, one or more pits, one or more ribs, or a combination of the foregoing.
In an embodiment, the crucible further comprises a crucible disposed in the furnace body, the crucible comprises a body and an upper opening, the body defines a containing space and comprises a ring wall, a bottom wall and at least one auxiliary heating rib connected to the ring wall and penetrating through the containing space.
To achieve the above object, the present invention also provides a dual deposition chamber apparatus for producing silicon material, comprising a furnace body, a cooling jacket, a deposition device, and a passive gas supply device. The cooling jacket is arranged above the furnace body and is communicated with the furnace body, and a space is defined above the furnace body by the cooling jacket. The deposition device comprises at least one first deposition substrate and at least one second deposition substrate, wherein the first deposition substrate and the second deposition substrate are arranged in parallel in the space between the upper part of the furnace body and the cooling jacket, the first deposition substrate and the second deposition substrate are respectively provided with a first inner wall surface and a second inner wall surface which are inclined downwards relative to a vertical axis, a non-flat area is formed on the first inner wall surface and the second inner wall surface, and the non-flat area is a structure which is protruded or recessed relative to a plane of the first inner wall surface and the second inner wall surface respectively. The passive gas supply device is communicated with an air charging port of the furnace body.
In one embodiment, the apparatus further comprises at least one baffle plate disposed in the space and above the deposition apparatus.
In one embodiment, the structure is one or more bumps, one or more pits, one or more ribs, or a combination of the foregoing.
In an embodiment, the crucible further comprises a crucible disposed in the furnace body, the crucible comprises a body and an upper opening, the body defines a containing space and comprises a ring wall, a bottom wall and at least one auxiliary heating rib connected to the ring wall and penetrating through the containing space.
In order to achieve the above object, the present invention further provides a dual deposition chamber apparatus for producing silicon material, comprising a furnace body, a cooling jacket, a deposition device, a vacuum pumping device and a passive gas supply device. The cooling jacket is arranged above the furnace body and is communicated with the furnace body, a space is defined above the furnace body by the cooling jacket, and the cooling jacket comprises an opening communicated with the space. The deposition device comprises at least one first deposition substrate and at least one second deposition substrate, wherein the first deposition substrate and the second deposition substrate are arranged in parallel in the space between the upper part of the furnace body and the cooling jacket, the first deposition substrate and the second deposition substrate are respectively provided with a first inner wall surface and a second inner wall surface which are inclined downwards relative to a vertical axis, a non-flat area is formed on the first inner wall surface and the second inner wall surface, and the non-flat area is a structure which is protruded or recessed relative to a plane of the first inner wall surface and the second inner wall surface respectively. The vacuum pumping device is communicated with the opening of the cooling jacket. The passive gas supply device is communicated with an air charging port of the furnace body.
In one embodiment, the apparatus further comprises at least one baffle disposed in the space between the opening of the cooling jacket and the deposition apparatus.
In one embodiment, the structure is one or more bumps, one or more pits, one or more ribs, or a combination of the foregoing.
In an embodiment, the crucible further comprises a crucible disposed in the furnace body, the crucible comprises a body and an upper opening, the body defines a containing space and comprises a ring wall, a bottom wall and at least one auxiliary heating rib connected to the ring wall and penetrating through the containing space.
The invention will now be described in more detail with reference to the drawings and specific examples, which are not intended to limit the invention thereto.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment of the present invention.
Fig. 2A is a schematic front view of a deposition substrate according to a first embodiment of the present invention.
Fig. 2B is a schematic side view of a deposition substrate according to a first embodiment of the present invention.
Fig. 3 is a partially enlarged schematic illustration of a first embodiment of the present invention.
FIG. 4 is a schematic view of section A-A of FIG. 3 according to the present invention.
Fig. 5 is a schematic structural diagram of a second embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a third embodiment of the present invention.
Wherein reference numerals are used to refer to
10: furnace body
11: insulating base
111: top part
112: through hole
113: inflation inlet
12: heater
20: cooling jacket
21: space of
22: cooling channel
221: inlet end
222: outlet end
23: an opening
24: cooling device
30: deposition apparatus
31: first deposition substrate
311: a first inner wall surface
32: second deposition substrate
321: a second inner wall surface
33: structure of the
331: bump
332: pit point
333: raised strips
334: concave strip
40: baffle plate
41: first baffle plate
411: lower surface of
42: second baffle plate
50: crucible pot
51: body
511: annular wall
512: bottom wall
513: auxiliary heating rib
52: upper opening
53: accommodating space
60: vacuum air extractor
70: passive gas supply device
80: material to be reacted
Detailed Description
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context indicates otherwise.
Directional terms used herein, such as up, down, left, right, front, rear, and derivatives or synonyms thereof, relate to the orientation of the elements in the figures and are not limiting of the invention unless the context clearly dictates otherwise. The detailed description and technical content of the present invention will now be described with reference to the accompanying drawings.
Referring to FIGS. 1, 2A and 2B, the present invention discloses a dual deposition chamber apparatus for producing silicon material, comprising a furnace body 10, a cooling jacket 20, a deposition device 30, at least one baffle 40, a crucible 50 and a vacuum pumping device 60.
The furnace body 10 includes an insulating base 11 and at least one heater 12, and a top 111 of the insulating base 11 includes a plurality of through holes 112 for communicating the furnace body 10 with the cooling jacket 20. The heater 12 is disposed on an inner side and a bottom side of the insulating base 11 and surrounds the periphery of the crucible 50, and the heater 12 is used for heating a material 80 to be reacted placed in the crucible 50, so that the material 80 to be reacted forms a reaction vapor. The material of the insulating base 11 may be carbon fiber, refractory cement or magnesia brick.
The cooling jacket 20 is disposed above the furnace body 10 in communication and defines a space 21, and the cooling jacket 20 includes a cooling passage 22 and an opening 23. The cooling channel 22 has an inlet end 221 and an outlet end 222, the inlet end 221 being connected to a cooling device 24 to provide a cooling fluid flowing into the cooling channel 22 and the cooling fluid flowing out of the outlet end 222, the cooling fluid may comprise any of a variety of liquids or gases, for example, water, coolant or air. The opening 23 is disposed at a top of the cooling jacket 20 to communicate with the vacuum pumping device 60, and the cooling jacket 20 is placed in a vacuum environment with a vacuum state of less than 1torr by operating the vacuum pumping device 60.
The deposition apparatus 30 includes at least one first deposition substrate 31 and at least one second deposition substrate 32, where the first deposition substrate 31 and the second deposition substrate 32 are disposed in parallel and opposite to each other in the space 21 between the cooling jackets 20, the first deposition substrate 31 has a first inner wall surface 311, the second deposition substrate 32 has a second inner wall surface 321, the first inner wall surface 311 and the second inner wall surface 321 are inclined downward with respect to a vertical axis and form a non-flat area, the non-flat area is a structure 33 protruding or recessed with respect to a plane of the first inner wall surface 311 and the second inner wall surface 321, respectively, the structure 33 is one or more protruding points 331, one or more recessed points 332, one or more protruding strips 333, one or more recessed strips 334, or a combination of the foregoing (as shown in fig. 2A, 2B, the first deposition substrate 31 is taken as an example in the drawings). Further, the pitches of the convex point 331, the concave point 332, the convex strip 333 and the concave strip 334 may be the same or different, and the protruding heights or the concave depths of the convex point 331, the concave point 332, the convex strip 333 and the concave strip 334 may be the same or different. Wherein the first deposition substrate 31 and the second deposition substrate 32 may be inclined at an angle of between 10 ° and 80 ° with respect to a vertical axis.
By the inclined arrangement of the first deposition substrate 31 and the second deposition substrate 32 and the structure 33, the deposition efficiency of the reaction vapor can be greatly increased, wherein the structure 33 can make the reaction vapor more likely to generate Nucleation (Nucleation). In this embodiment, the first deposition substrate 31 and the second deposition substrate 32 are respectively disposed in the space 21 of the cooling jacket 20 in sequence, and the first deposition substrate 31, the second deposition substrate 32, the first deposition substrate 31 and the second deposition substrate 32 are disposed in sequence from left to right, wherein the first inner wall surface 311 of the first deposition substrate 31 and the second inner wall surface 321 of the second deposition substrate 32 are disposed face to face but not parallel, the first deposition substrate 31 is inclined clockwise by an angle relative to a vertical axis, and the second deposition substrate 32 is inclined counterclockwise by the angle relative to the vertical axis. In other examples, the first deposition substrate 31 and the second deposition substrate 32 may be disposed in the space 21 of the cooling jacket 20 in a vertically layered manner, and in detail, the space 21 may be divided into an upper layer and a lower layer, and the upper layer and the lower layer are respectively provided with the first deposition substrate 31 and the second deposition substrate 32.
The baffle 40 is disposed in the space 21 and between the opening 23 of the cooling jacket 20 and the deposition device 30, and further, the baffle 40 may include a first baffle 41 and a second baffle 42, where the first baffle 41 is disposed above the deposition device 30, and can block upward flow of the reaction vapor to increase the deposition time of the reaction vapor on the deposition device 30, so as to improve deposition efficiency, and the reaction vapor may also be deposited on the first baffle 41. The second baffle 42 is disposed on a side of the cooling jacket 20 adjacent to the opening 23 to block the reaction vapor from being pulled out of the cooling jacket 20 and into the vacuum pumping device 60. In one example, a lower surface 411 of the first baffle 41 can be formed with the structure 33 (not shown).
The crucible 50 is disposed in the furnace 10 and includes a body 51 and an upper opening 52, the body 51 includes a ring wall 511 and a bottom wall 512, the ring wall 511 and the bottom wall 512 define a receiving space 53, and the receiving space 53 is used for placing the material 80 to be reacted. Referring to fig. 3 and 4, in an embodiment, the body 51 further includes at least one auxiliary heating rib 513, the auxiliary heating rib 513 is connected to the annular wall 511 and penetrates through the accommodating space 53 to provide a uniform heating effect for the material 80 to be reacted placed in the crucible 50, and the number and arrangement of the auxiliary heating ribs 513 are not limited in this way. The crucible 50 may be made of ceramic, graphite, platinum, nickel or chromium.
In a first embodiment, the dual deposition chamber apparatus may be used to deposit a silicon monoxide deposit. Firstly, a silicon powder is placed in the crucible 50, the crucible 50 is heated to a first temperature by the heater 12 and maintained for a first heating time, so that a silicon dioxide layer is formed on the surfaces of the silicon powder, and the silicon dioxide layer is changed into a plurality of silicon dioxide shell/silicon core composite powder. Wherein the first temperature ranges from 600 ℃ to 900 ℃, and the first heating time ranges from 12 hours to 36 hours.
Then, the vacuum pumping device 60 is continuously operated to cause the cooling jacket 20 and the furnace body 10 to present the vacuum environment, and the heater 12 continuously heats the crucible 50 to a second temperature to cause the silica shell and the silica core of the silica shell/silica core composite powder to react to form a silicon monoxide and sublimate into a silicon monoxide vapor. Wherein the second temperature ranges from 1200 ℃ to 1450 ℃.
Finally, the SiO vapor drifts to the space 21 of the cooling jacket 20 through the plurality of through holes 112 of the furnace body 10, and the SiO vapor is cooled and deposited on the first deposition substrate 31 and the second deposition substrate 32 of the deposition apparatus 30 to form the SiO deposit.
Referring to fig. 5, a schematic structural diagram of a second embodiment of the present invention is shown, in which the structure of the dual deposition chamber apparatus for producing silicon material is substantially the same as that of the first embodiment, and the difference is that the vacuum pumping device 60 of the first embodiment is replaced by a passive gas supply device 70, the passive gas supply device 70 is communicatively disposed at an air charging port 113 of the insulating base 11 of the furnace body 10 to provide a passive gas into the accommodating space 53, the passive gas may be argon or nitrogen, and in the present embodiment, the baffle 40 is disposed in the space 21 and above the deposition device 30.
In a second embodiment, the dual deposition chamber apparatus may also be used to deposit the silicon monoxide deposit. First, the silicon powder is placed in the crucible 50, the crucible 50 is heated to the first temperature by the heater 12 and the first heating time is maintained, so that the silicon dioxide layers are formed on the surfaces of the silicon powder, and the silicon powder is changed into a plurality of silicon dioxide shell/silicon core composite powder.
Then, the inert gas supply device 70 is continuously operated to make the cooling jacket 20 and the furnace body 10 present an inert atmosphere, and the heater 12 continuously heats the crucible 50 to the second temperature, so that the silica shell and the silica core of the silica shell/silica core composite powder react to form the SiO and sublimate into the SiO vapor.
Finally, the SiO vapor drifts to the space 21 of the cooling jacket 20 through the plurality of through holes 112 of the furnace body 10, and the SiO vapor is cooled and deposited on the first deposition substrate 31 and the second deposition substrate 32 of the deposition apparatus 30 to form the SiO deposit.
Referring to fig. 6, a third embodiment of the present invention is shown, in which the dual deposition chamber apparatus for producing silicon material has a structure substantially identical to that of the first and second embodiments, except that the present embodiment includes the vacuum pumping device 60 and the passive gas supply device 70, the vacuum pumping device 60 is connected to the opening 23, and the passive gas supply device 70 is connected to the gas charging port 113.
In a third embodiment, the dual deposition chamber apparatus may be used to deposit the silicon monoxide deposit. First, the silicon powder is placed in the crucible 50, the crucible 50 is heated to the first temperature by the heater 12 and the first heating time is maintained, so that the silicon dioxide layers are formed on the surfaces of the silicon powder, and the silicon powder is changed into a plurality of silicon dioxide shell/silicon core composite powder.
Then, the vacuum pumping device 60 is continuously operated to make the cooling jacket 20 and the furnace body 10 present the vacuum environment, and the inert gas supply device 70 is introduced with inert gas to make the cooling jacket 20 and the furnace body 10 present an inert gas atmosphere, and the heater 12 continuously heats the crucible 50 to the second temperature to make the silica shell and the silicon core of the silica shell/silicon core composite powder react to form the silicon monoxide and sublimate into the silicon monoxide vapor.
Finally, the SiO vapor drifts to the space 21 of the cooling jacket 20 through the plurality of through holes 112 of the furnace body 10, and the SiO vapor is cooled and deposited on the first deposition substrate 31 and the second deposition substrate 32 of the deposition apparatus 30 to form the SiO deposit.
In summary, the first inner wall surface of the first deposition substrate and the second inner wall surface of the second deposition substrate are disposed obliquely downward with respect to the vertical axis, and the uneven region is formed on the first inner wall surface and the second inner wall surface, so that the reaction vapor generated after heating the material to be reacted can be effectively received, the deposition efficiency is greatly increased, and the Nucleation (Nucleation) phenomenon of the reaction vapor can be more easily generated in the uneven region.
Of course, the present invention is capable of other various embodiments and its several details are capable of modification and variation in light of the present invention, as will be apparent to those skilled in the art, without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (12)
1. A dual deposition chamber apparatus for producing silicon material, comprising:
a furnace body;
the cooling jacket is arranged above the furnace body and is communicated with the furnace body, a space is defined above the furnace body by the cooling jacket, and the cooling jacket comprises an opening communicated with the space;
the deposition device comprises at least one first deposition substrate and at least one second deposition substrate, wherein the first deposition substrate and the second deposition substrate are arranged in parallel in the space between the upper part of the furnace body and the cooling jacket, the first deposition substrate and the second deposition substrate are respectively provided with a first inner wall surface and a second inner wall surface which are inclined downwards relative to a vertical axis, a non-flat area is formed on the first inner wall surface and the second inner wall surface, and the non-flat area is a structure which is protruded or recessed relative to a plane of the first inner wall surface and a plane of the second inner wall surface respectively; and
a vacuum pumping device is communicated with the opening of the cooling jacket.
2. The apparatus of claim 1, further comprising at least one baffle disposed in the space between the opening of the cooling jacket and the deposition device.
3. The apparatus of claim 1, wherein the structure is one or more bumps, one or more pits, one or more ribs, or a combination thereof.
4. The apparatus of claim 1, further comprising a crucible disposed in the furnace, the crucible comprising a body and an upper opening, the body defining a receiving space and comprising an annular wall, a bottom wall, and at least one auxiliary heating rib connected to the annular wall and extending through the receiving space.
5. A dual deposition chamber apparatus for producing silicon material, comprising:
a furnace body;
the cooling jacket is arranged above the furnace body and communicated with the furnace body, and a space is defined above the furnace body by the cooling jacket;
the deposition device comprises at least one first deposition substrate and at least one second deposition substrate, wherein the first deposition substrate and the second deposition substrate are arranged in parallel in the space between the upper part of the furnace body and the cooling jacket, the first deposition substrate and the second deposition substrate are respectively provided with a first inner wall surface and a second inner wall surface which are inclined downwards relative to a vertical axis, a non-flat area is formed on the first inner wall surface and the second inner wall surface, and the non-flat area is a structure which is protruded or recessed relative to a plane of the first inner wall surface and a plane of the second inner wall surface respectively; and
and a passive gas supply device communicated with an air charging port of the furnace body.
6. The apparatus of claim 5, further comprising at least one baffle disposed in the space above the deposition device.
7. The apparatus of claim 5, wherein the structure is one or more bumps, one or more pits, one or more ribs, or a combination thereof.
8. The apparatus of claim 5, further comprising a crucible disposed in the furnace, the crucible comprising a body and an upper opening, the body defining a receiving space and comprising an annular wall, a bottom wall, and at least one auxiliary heating rib connected to the annular wall and extending through the receiving space.
9. A dual deposition chamber apparatus for producing silicon material, comprising:
a furnace body;
the cooling jacket is arranged above the furnace body and is communicated with the furnace body, a space is defined above the furnace body by the cooling jacket, and the cooling jacket comprises an opening communicated with the space;
the deposition device comprises at least one first deposition substrate and at least one second deposition substrate, wherein the first deposition substrate and the second deposition substrate are arranged in parallel in the space between the upper part of the furnace body and the cooling jacket, the first deposition substrate and the second deposition substrate are respectively provided with a first inner wall surface and a second inner wall surface which are inclined downwards relative to a vertical axis, a non-flat area is formed on the first inner wall surface and the second inner wall surface, and the non-flat area is a structure which is protruded or recessed relative to a plane of the first inner wall surface and a plane of the second inner wall surface respectively;
a vacuum pumping device communicated with the opening of the cooling jacket; and
and a passive gas supply device communicated with an air charging port of the furnace body.
10. The apparatus of claim 9, further comprising at least one baffle disposed in the space between the opening of the cooling jacket and the deposition device.
11. The apparatus of claim 9, wherein the structure is one or more bumps, one or more pits, one or more ribs, or a combination thereof.
12. The apparatus of claim 9, further comprising a crucible disposed in the furnace, the crucible comprising a body and an upper opening, the body defining a receiving space and comprising an annular wall, a bottom wall, and at least one auxiliary heating rib connected to the annular wall and extending through the receiving space.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211029567.2A CN117660882A (en) | 2022-08-25 | 2022-08-25 | Dual deposition chamber apparatus for producing silicon material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211029567.2A CN117660882A (en) | 2022-08-25 | 2022-08-25 | Dual deposition chamber apparatus for producing silicon material |
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| Publication Number | Publication Date |
|---|---|
| CN117660882A true CN117660882A (en) | 2024-03-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211029567.2A Pending CN117660882A (en) | 2022-08-25 | 2022-08-25 | Dual deposition chamber apparatus for producing silicon material |
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| Country | Link |
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| CN (1) | CN117660882A (en) |
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2022
- 2022-08-25 CN CN202211029567.2A patent/CN117660882A/en active Pending
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