CN117651444A

CN117651444A - Display device, display module and electronic equipment

Info

Publication number: CN117651444A
Application number: CN202311109126.8A
Authority: CN
Inventors: 杉泽希; 山根靖正; 中村太纪; 铃木恒德; 后藤尚人; 中泽安孝
Original assignee: Semiconductor Energy Laboratory Co Ltd
Current assignee: Semiconductor Energy Laboratory Co Ltd
Priority date: 2022-09-02
Filing date: 2023-08-30
Publication date: 2024-03-05

Abstract

Provided are a novel display device, a display module, and an electronic device which are excellent in convenience, practicality, and reliability. The display device includes a first light emitting device having first and second electrodes, a first layer, a first unit, and a second light emitting device having third and fourth electrodes, a second layer, and a second unit. The first cell is sandwiched between the first and second electrodes and contains a first luminescent material, and the first layer is sandwiched between the first cell and the first electrode and contacts the first electrode. The third electrode is adjacent to the first electrode. A first gap is formed between the third electrode and the first electrode. The second cell is sandwiched between the third and fourth electrodes and contains a second light-emitting material, and the second layer is sandwiched between the second cell and the third electrode and contacts the third electrode. The first and second layers use materials having a first spin density and a second spin density higher than the first spin density, respectively, as measured by ESR device in the film state.

Description

Display device, display module and electronic equipment

Technical Field

One embodiment of the present invention relates to a display device, a display module, an electronic apparatus, or a semiconductor device.

Note that one embodiment of the present invention is not limited to the above-described technical field. The technical field of one embodiment of the invention disclosed in the present specification and the like relates to an object, a method, or a manufacturing method. Further, one embodiment of the present invention relates to a process, a machine, a product, or a composition (composition of matter). More specifically, examples of the technical field of one embodiment of the present invention disclosed in the present specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method of these devices, and a manufacturing method of these devices.

Background

In recent years, high definition display panels are demanded. As devices requiring a high-definition display panel, there are, for example, a smart phone, a tablet terminal, a notebook computer, and the like. In addition, a stationary display device such as a television device and a display device is also required to have higher definition with higher resolution. As the most demanded high definition device, there is, for example, a device applied to Virtual Reality (VR: virtual Reality) or augmented Reality (AR: augmented Reality).

In addition, as a display device which can be applied to a display panel, a liquid crystal display device, a light-emitting device including a light-emitting element such as an organic EL (Electro Luminescence: electroluminescence) element or a light-emitting diode (LED: light Emitting Diode), an electronic paper which displays by electrophoresis, or the like, is typically given.

For example, the basic structure of an organic EL element is a structure in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying a voltage to this element, light emission from the light-emitting organic compound can be obtained. Since a display device using the organic EL element does not require a backlight source required for a liquid crystal display device or the like, a thin, lightweight, high-contrast, and low-power display device can be realized. For example, patent document 1 discloses an example of a display device using an organic EL element.

Patent document 2 discloses a display apparatus applied to VR using an organic EL device.

[ patent document 1] Japanese patent application laid-open No. 2002-324673

[ patent document 2] International patent application publication No. 2018/087625

Disclosure of Invention

An object of one embodiment of the present invention is to provide a novel display device having excellent convenience, practicality, or reliability. Further, it is an object of one embodiment of the present invention to provide a novel display module having excellent convenience, practicality, or reliability. Further, it is an object of one embodiment of the present invention to provide a novel electronic device which is excellent in convenience, practicality, or reliability. Further, it is an object of one embodiment of the present invention to provide a novel display device, a novel display module, a novel electronic apparatus, or a novel semiconductor device.

Note that the description of these objects does not hinder the existence of other objects. Note that one embodiment of the present invention is not required to achieve all of the above objects. Further, other objects than the above can be obtained and extracted from the descriptions of the specification, drawings, claims, and the like.

(1) One embodiment of the present invention is a display apparatus including a first light emitting device and a second light emitting device.

The first light emitting device includes a first electrode, a first layer, a first unit, and a second electrode. The first cell is sandwiched between a first electrode and a second electrode, the first cell comprising a first luminescent material. Further, a first layer is sandwiched between the first cell and the first electrode, the first layer is in contact with the first electrode, and the first layer uses a material in which a first spin density is observed by an Electron Spin Resonance (ESR) device in a film state.

The second light emitting device includes a third electrode, a second layer, a second unit, and a fourth electrode. The third electrode is adjacent to the first electrode with a first gap therebetween, and the second unit is sandwiched between the third electrode and the fourth electrode, the second unit containing a second light-emitting material. Further, a second layer is sandwiched between the second cell and the third electrode, the second layer is in contact with the third electrode, the second layer uses a material in which a second spin density is observed by an Electron Spin Resonance (ESR) device in a film state, and the second spin density is higher than the first spin density.

(2) Further, one embodiment of the present invention is a display apparatus including a first light emitting device and a second light emitting device.

The first light emitting device includes a first electrode, a first layer, a first unit, and a second electrode. The first cell is sandwiched between a first electrode and a second electrode, the first cell comprising a first luminescent material. Further, a first layer is sandwiched between the first cell and the first electrode, the first layer is in contact with the first electrode, and the first layer contains an electron accepting material (electron-accepting material) in a first weight percent.

The second light emitting device includes a third electrode, a second layer, a second unit, and a fourth electrode. The third electrode is adjacent to the first electrode with a first gap therebetween, and the second unit is sandwiched between the third electrode and the fourth electrode, the second unit containing a second light-emitting material. Further, a second layer is sandwiched between the second cell and the third electrode, the second layer is in contact with the third electrode, the second layer contains an electron-accepting material at a second weight percentage, and the second weight percentage is higher than the first weight percentage.

(3) Further, an embodiment of the present invention is the display device described above, wherein a second gap is provided between the second layer and the first layer, and the second gap overlaps with the first gap.

This can suppress the occurrence of a phenomenon in which one of the first light-emitting device and the second light-emitting device emits light while the other emits light with unintended luminance. Further, the first light emitting device and the second light emitting device may be made to emit light independently. In addition, occurrence of a crosstalk phenomenon between light emitting devices can be suppressed. Further, the driving voltage rise of the second light emitting device can be suppressed. In addition, the definition of the display device can be improved. In addition, the pixel aperture ratio of the display device can be improved. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

(4) Further, one embodiment of the present invention is the display device described above, which includes a first insulating film, a conductive film, and a second insulating film.

The first insulating film overlaps the conductive film with the first electrode and the third electrode interposed therebetween. In addition, the conductive film includes a second electrode and a fourth electrode.

The second insulating film is sandwiched between the conductive film and the first insulating film, the second insulating film overlaps the first gap, and the second insulating film fills the second gap. The second insulating film has a first opening and a second opening, the first opening overlaps the first electrode, and the second opening overlaps the third electrode.

Thereby, the second gap can be filled with the second insulating film. Further, the steps due to the first gap and the second gap can be made substantially flat. Further, a phenomenon in which a notch or a crack is generated in the conductive film due to the step can be suppressed. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

(5) Further, one embodiment of the present invention is the display device described above, wherein the maximum peak value of the emission spectrum of the first luminescent material is in a range of 380nm to 480nm, and the maximum peak value of the emission spectrum of the second luminescent material is in a range of 500nm to 550 nm.

Since the maximum peak value of the emission spectrum of the first luminescent material is in the range of 380nm to 480nm, and the maximum peak value of the emission spectrum of the second luminescent material is in the range of 500nm to 550nm, the color gamut that the display device can display can be enlarged. Further, by using the second light-emitting material having smaller excitation energy than the first light-emitting material, the driving voltage of the second light-emitting device can be suppressed. Further, power consumption of the display device can be suppressed. In addition, even if the absorption intensity of the electron accepting material at the wavelength of the maximum peak of the emission spectrum of the first luminescent material is higher than the absorption intensity at the wavelength of the maximum peak of the emission spectrum of the second luminescent material, the phenomenon that the light emitted by the first luminescent material is absorbed by the first layer can be suppressed by making the first weight percentage lower than the second weight percentage. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

(6) In addition, an embodiment of the present invention is the display device described above, wherein the first light-emitting material is a fluorescent substance, and the second light-emitting material is a phosphorescent substance.

Thus, power consumption of the display device can be suppressed. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

(7) Further, one embodiment of the present invention is a display module including: the display device; and at least one of a connector and an integrated circuit.

(8) Further, one embodiment of the present invention is an electronic device including: the display device; and at least one of a battery, a camera, a speaker, and a microphone.

In the drawings of the present specification, components are classified according to their functions and are shown as block diagrams of blocks independent of each other, but it is difficult to completely divide the components according to their functions in practice, and one component involves a plurality of functions.

In this specification, a light emitting apparatus includes an image display device using a light emitting device. In addition, the light emitting device sometimes further includes the following modules: the light emitting device is mounted with a module of a connector such as an anisotropic conductive film (ACF: anisotropic Conductive Film) or TCP (Tape Carrier Package: tape carrier package); a module provided with a printed wiring board at an end of the TCP; or a module in which an IC (integrated circuit) is directly mounted On the light emitting device by COG (Chip On Glass) method. Further, the lighting device and the like sometimes include a light emitting device.

According to one embodiment of the present invention, a novel display device with excellent convenience, practicality, or reliability can be provided. Further, according to an embodiment of the present invention, a novel display module with excellent convenience, practicality, or reliability can be provided. Further, according to one embodiment of the present invention, a novel electronic device with excellent convenience, practicality, or reliability can be provided. Further, according to an embodiment of the present invention, a novel display device can be provided. Furthermore, according to one aspect of the present invention, a novel display module may be provided. Furthermore, according to one aspect of the present invention, a novel electronic device can be provided.

Note that the description of these effects does not prevent the existence of other effects. Furthermore, one embodiment of the present invention need not have all of the above effects. Note that effects other than the above can be obtained and extracted from the description of the specification, drawings, claims, and the like.

Drawings

Fig. 1A to 1D are diagrams illustrating a structure of a display device according to an embodiment;

fig. 2 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 3A and 3B are diagrams illustrating a structure of a light emitting device according to an embodiment;

Fig. 4A and 4B are diagrams illustrating a structure of a light emitting device according to an embodiment;

fig. 5A to 5C are diagrams illustrating a structure of a display device according to an embodiment;

fig. 6 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 7 is a diagram illustrating a structure of a display module according to an embodiment;

fig. 8A and 8B are diagrams illustrating a structure of a display device according to an embodiment;

fig. 9 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 10 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 11 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 12 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 13 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 14 is a diagram illustrating a structure of a display module according to an embodiment;

fig. 15A to 15C are diagrams illustrating a structure of a display device according to an embodiment;

fig. 16 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 17 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 18 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 19 is a diagram illustrating a structure of a display device according to an embodiment;

Fig. 20 is a diagram illustrating a structure of a display device according to an embodiment;

fig. 21A to 21D are diagrams illustrating examples of an electronic device according to an embodiment;

fig. 22A to 22F are diagrams illustrating examples of an electronic device according to an embodiment;

fig. 23A to 23G are diagrams illustrating an example of an electronic device according to an embodiment;

fig. 24 is a diagram illustrating a structure of a light emitting device that can be used for the display apparatus according to the embodiment;

fig. 25 is a diagram illustrating current density-luminance characteristics of a light emitting device according to an embodiment;

fig. 26 is a diagram illustrating voltage-luminance characteristics of a light emitting device according to an embodiment;

fig. 27 is a diagram illustrating voltage-current characteristics of a light emitting device according to an embodiment;

fig. 28 is a diagram illustrating an emission spectrum of a light emitting device according to an embodiment;

fig. 29A to 29D are diagrams illustrating a light emitting state of the light emitting device according to the embodiment;

fig. 30A to 30C are diagrams illustrating a structure of a display device according to an embodiment;

fig. 31A and 31B are diagrams illustrating a structure of a light emitting device that can be used for the display apparatus according to the embodiment;

fig. 32 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 33 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

Fig. 34 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 35 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 36 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 37 is a diagram illustrating voltage-current density characteristics of a light emitting device according to an embodiment;

fig. 38 is a diagram illustrating voltage-current density characteristics of a light emitting device according to an embodiment;

fig. 39A to 39D are diagrams illustrating the structure of a light emitting device that can be used for the display apparatus according to the embodiment;

fig. 40A to 40C are diagrams illustrating a structure of a display device according to an embodiment;

fig. 41A to 41C are diagrams illustrating the structure of a light emitting device that can be used for the display apparatus according to the embodiment;

fig. 42 is a diagram illustrating current density-luminance characteristics of a light emitting device according to an embodiment;

fig. 43 is a diagram illustrating luminance-current efficiency characteristics of a light emitting device according to an embodiment;

fig. 44 is a diagram illustrating voltage-luminance characteristics of a light emitting device according to an embodiment;

fig. 45 is a diagram illustrating voltage-current density characteristics of a light emitting device according to an embodiment;

fig. 46 is a diagram illustrating luminance-blue efficiency index characteristics of a light emitting device according to an embodiment;

Fig. 47 is a diagram illustrating an emission spectrum of a light emitting device according to an embodiment;

fig. 48 is a diagram illustrating normalized luminance of a light emitting device according to an embodiment as a function of time;

fig. 49 is a diagram illustrating current density-luminance characteristics of a light emitting device according to an embodiment;

fig. 50 is a diagram illustrating luminance-current efficiency characteristics of a light emitting device according to an embodiment;

fig. 51 is a diagram illustrating voltage-luminance characteristics of a light emitting device according to an embodiment;

fig. 52 is a diagram illustrating voltage-current density characteristics of a light emitting device according to an embodiment;

fig. 53 is a diagram illustrating an emission spectrum of a light emitting device according to an embodiment;

fig. 54 is a diagram illustrating normalized luminance of a light emitting device according to an embodiment as a function of time;

fig. 55 is a diagram illustrating current density-luminance characteristics of a light emitting device according to an embodiment;

fig. 56 is a diagram illustrating luminance-current efficiency characteristics of a light emitting device according to an embodiment;

fig. 57 is a diagram illustrating voltage-luminance characteristics of a light emitting device according to an embodiment;

fig. 58 is a diagram illustrating voltage-current density characteristics of a light emitting device according to an embodiment;

fig. 59 is a diagram illustrating an emission spectrum of a light emitting device according to an embodiment;

Fig. 60 is a diagram illustrating normalized luminance of a light emitting device according to an embodiment as a function of time;

fig. 61 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 62 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 63 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 64 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 65 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 66 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 67 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 68 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 69 is a diagram illustrating a manufacturing method of a display device according to an embodiment;

fig. 70 is a diagram illustrating voltage-current density characteristics of a light emitting device according to an embodiment;

fig. 71 is a diagram illustrating a current density-blue efficiency index characteristic of a light emitting device according to an embodiment;

fig. 72 is a diagram illustrating normalized luminance of a light emitting device according to an embodiment as a function of time;

fig. 73 is a diagram illustrating voltage-current density characteristics of a light emitting device according to an embodiment;

Fig. 74 is a diagram illustrating current density-current efficiency characteristics of a light emitting device according to an embodiment;

fig. 75 is a diagram illustrating normalized luminance of a light emitting device according to an embodiment as a function of time;

fig. 76 is a diagram illustrating voltage-current density characteristics of a light emitting device according to an embodiment;

fig. 77 is a diagram illustrating current density-current efficiency characteristics of a light emitting device according to an embodiment;

fig. 78 is a diagram illustrating normalized luminance of a light emitting device according to an embodiment as a function of time;

fig. 79 is a graph illustrating voltage-current density characteristics of a reference device;

fig. 80 is a diagram illustrating current density-current efficiency characteristics of the reference device.

Detailed Description

The display device according to one embodiment of the present invention includes a first light emitting device and a second light emitting device. The first light emitting device includes a first electrode, a first layer, a first unit, and a second electrode, the first unit being sandwiched between the first electrode and the second electrode, the first unit including a first light emitting material. The first layer is sandwiched between the first cell and the first electrode, the first layer is in contact with the first electrode, and the first layer uses a material in a film state in which a first spin density is observed by an Electron Spin Resonance (ESR) device. The second light emitting device includes a third electrode, a second layer, a second unit, and a fourth electrode. The third electrode is adjacent to the first electrode with a first gap therebetween, and the second unit is sandwiched between the third electrode and the fourth electrode, the second unit containing a second light-emitting material. A second layer is sandwiched between the second cell and a third electrode, the second layer is in contact with the third electrode, and the second layer uses a material in a film state in which a second spin density is observed by an Electron Spin Resonance (ESR) device, the second spin density being higher than the first spin density.

The embodiments will be described in detail with reference to the accompanying drawings. It is noted that the present invention is not limited to the following description, and one of ordinary skill in the art can easily understand the fact that the manner and details thereof can be changed into various forms without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. Note that, in the structure of the invention described below, the same reference numerals are used in common in different drawings to denote the same parts or parts having the same functions, and repetitive description thereof will be omitted.

Embodiment 1

In this embodiment mode, a structure of a display device according to an embodiment of the present invention will be described with reference to fig. 1A to 2.

Fig. 1A is a perspective view illustrating a structure of a display device according to an embodiment of the present invention, and fig. 1B is a plan view illustrating a part of fig. 1A. Fig. 1C is a sectional view taken along a line P-Q of fig. 1B, and fig. 1D is a sectional view illustrating a structure different from that of fig. 1C.

Fig. 2 is a sectional view illustrating a structure of a display device according to an embodiment of the present invention.

< structural example of display device 1>

The display device 700 described in this embodiment mode includes a group of pixels 703 (see fig. 1A). In addition, the display device 700 includes a substrate 510 and a functional layer 520.

The group of pixels 703 includes a pixel 702A, a pixel 702B, and a pixel 702C (see fig. 1B).

The pixel 702A includes a light emitting device 550A and a pixel circuit 530A, and the light emitting device 550A is electrically connected to the pixel circuit 530A (see fig. 1C and 1D).

The pixel 702B includes a light emitting device 550B and a pixel circuit 530B, and the light emitting device 550B is electrically connected to the pixel circuit 530B.

The pixel 702C includes a light emitting device 550C and a pixel circuit 530C, and the light emitting device 550C is electrically connected to the pixel circuit 530C.

The functional layer 520 includes pixel circuits 530A, 530B, and 530C. Further, the pixel circuit 530A is sandwiched between the light emitting device 550A and the substrate 510, the pixel circuit 530B is sandwiched between the light emitting device 550B and the substrate 510, and the pixel circuit 530C is sandwiched between the light emitting device 550C and the substrate 510.

In the display device 700 according to one embodiment of the present invention, for example, the light emitting device 550A emits light ELA in a direction in which the pixel circuit 530A is not disposed, the light emitting device 550B emits light ELB in a direction in which the pixel circuit 530B is not disposed, and the light emitting device 550C emits light ELC in a direction in which the pixel circuit 530C is not disposed (see fig. 1C). In other words, the display device 700 according to one embodiment of the present invention is a top emission display device.

In the display device 700 according to one embodiment of the present invention, for example, the light emitting device 550A emits light ELA in a direction in which the pixel circuit 530A is arranged, the light emitting device 550B emits light ELB in a direction in which the pixel circuit 530B is arranged, and the light emitting device 550C emits light ELC in a direction in which the pixel circuit 530C is arranged (see fig. 1D). In other words, the display device 700 according to one embodiment of the present invention is a bottom emission display device.

Structural example of light-emitting device 550A

The light emitting device 550A includes an electrode 551A, a layer 104A, a unit 103A, and an electrode 552A (see fig. 2).

The cell 103A is sandwiched between the electrode 551A and the electrode 552A, and the cell 103A contains a light emitting material EMA. Further, cell 103A includes layer 111A, layer 112A, and layer 113A.

Details of structures that can be used for the light emitting device 550A will be described in embodiment modes 2 to 6.

Structural example of layer 104A

Layer 104A is sandwiched between cell 103A and electrode 551A, layer 104A being in contact with electrode 551A. For example, an electron-receiving material AM may be used for the layer 104A. Specifically, a composite material including an electron-receiving material AM and a hole-transporting material can be used for the layer 104A. The non-shared electron pair of the electron-receiving material AM and the hole-transporting material can interact, thereby being used forThe spin density D1 is observed in a film of the material of layer 104A. Specifically, 1×10 can be observed ¹⁶ spins/cm ³ Above and 1×10 ²¹ spins/cm ³ The spin density D1 is as follows. For example, a film of a material for the layer 104A is formed over a quartz substrate, and the spin density of the film can be observed by an electron spin resonance method (ESR: electron spin resonance).

Further, the layer 104A contains the electron-receiving material AM, for example, in weight percent WA. As the electron-receiving material AM, an electron-receiving material described in detail in embodiment 3 can be used.

Structural example of light-emitting device 550B

The light emitting device 550B includes an electrode 551B, a layer 104B, a unit 103B, and an electrode 552B (see fig. 2). Electrode 551B is adjacent to electrode 551A, with a gap 551AB between electrode 551B and electrode 551A. In other words, electrode 551B is adjacent to electrode 551A with gap 551AB therebetween.

The cell 103B is sandwiched between the electrode 551B and the electrode 552B, and the cell 103B contains a light emitting material EMB. Further, cell 103B includes layer 111B, layer 112B, and layer 113B.

Details of structures that can be used for the light emitting device 550B will be described in embodiment modes 2 to 6.

Structural example 1> of layer 104B

Layer 104B is sandwiched between cell 103B and electrode 551B, layer 104B being in contact with electrode 551B. For example, an electron-receiving material AM may be used for the layer 104B. In addition, a spin density D2 may be observed in the film of the material for the layer 104B, the spin density D2 being higher than the spin density D1.

The layer 104B includes an electron accepting material AM, for example, in weight percent WB. Furthermore, weight percent WB is higher than weight percent WA. Specifically, the layer 104B contains more than and 50wt% or less of the electron-receiving material AM, and the weight percentage WB may be 3 times, preferably 10 times, the weight percentage WA.

Structural example 2> of layer 104B

There is a gap 104AB between the layers 104B and 104A. Gap 104AB overlaps gap 551 AB. In other words, layer 104B is adjacent to layer 104A with gap 104AB therebetween.

This can suppress the occurrence of a phenomenon in which one of the light-emitting device 550A and the light-emitting device 550B emits light with unintended luminance. Further, the light emitting device 550A and the light emitting device 550B can be made to emit light independently. In addition, occurrence of a crosstalk phenomenon between light emitting devices can be suppressed. Further, the driving voltage rise of the light emitting device 550B can be suppressed. In addition, the definition of the display device can be improved. In addition, the pixel aperture ratio of the display device can be improved. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

< structural example of display device 2>

The display device 700 described in this embodiment mode includes an insulating film 521, a conductive film 552, and an insulating film 529_3 (see fig. 2). Further, the display device 700 includes the layer 105, the film 529_1, and the film 529_2.

Structural example of insulating film 521

The insulating film 521 overlaps with the conductive film 552, and the electrode 551A and the electrode 551B are interposed between the insulating film 521 and the conductive film 552.

Structural example of conductive film 552

The conductive film 552 includes an electrode 552A and an electrode 552B.

For example, a conductive material may be used for the conductive film 552. Specifically, a single layer or a stacked layer of a material containing a metal, an alloy, or a conductive compound can be used for the conductive film 552. A structural example usable for the conductive film 552 will be described in detail in embodiment mode 4.

Structural example of layer 105

Layer 105 includes layer 105A and layer 105B. A material which easily injects carriers from the electrode 552A and the electrode 552B can be used for the layer 105. For example, an electron injecting material may be used for the layer 105. An example of a structure that can be used for the layer 105 will be described in detail in embodiment 4.

In this specification and the like, a device manufactured using a Metal Mask or an FMM (Fine Metal Mask) is sometimes referred to as a device having a MM (Metal Mask) structure. In this specification and the like, a device manufactured without using a metal mask or an FMM is sometimes referred to as a device having a MML (Metal Mask Less) structure.

Structural example of film 529_1

The film 529_1 includes a plurality of openings, one of which overlaps with the electrode 551A and the other of which overlaps with the electrode 551B. Further, the film 529_1 includes an opening portion overlapping with the gap 551 AB. For example, a film containing a metal, a metal oxide, an organic material, or an inorganic insulating material can be used as the film 529_1. Specifically, a metal film having light shielding properties can be used. This makes it possible to shield the light irradiated in the processing step and to suppress deterioration of the characteristics of the light emitting device due to the light.

Structural example of film 529_2

The film 529_2 includes openings, one of which overlaps with the electrode 551A and the other of which overlaps with the electrode 551B. Further, the film 529_2 overlaps with the gap 551 AB.

The film 529_2 includes a region in contact with the layer 104A and the layer 104B.

The film 529_2 includes a region in contact with the layer 112A and the layer 112B.

The film 529_2 includes a region in contact with the layer 111A and the layer 111B.

The film 529_2 includes a region in contact with the layer 113A and the layer 113B.

Further, the film 529_2 includes a region in contact with the insulating film 521. For example, the film 529_2 can be formed using an atomic layer deposition (ALD: atomic Layer Deposition) method. Thus, a film with good coverage can be formed. Specifically, a metal oxide film or the like can be used for the film 529_2. For example, alumina may be used.

Structural example of the insulating film 529_3

The insulating film 529_3 is sandwiched between the conductive film 552 and the insulating film 521, the insulating film 529_3 overlaps with the gap 551AB, and the insulating film 529_3 fills the gap 104AB.

The insulating film 529_3 includes an opening portion 529_3a and an opening portion 529_3b, the opening portion 529_3a overlaps with the electrode 551A, and the opening portion 529_3b overlaps with the electrode 551B.

For example, the insulating film 529_3 can be formed using a photosensitive resin. Specifically, an acrylic resin or the like can be used.

Thereby, the gap 104AB can be filled with the insulating film 529_3. The steps due to the gaps 551AB and 104AB are made substantially flat. Further, a phenomenon in which a notch or a crack is generated in the conductive film 552 due to a step can be suppressed. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

Method for manufacturing display device

For example, a display device according to one embodiment of the present invention can be manufactured using a photolithography technique.

[ step 1 ]

Specifically, in step 1, an electrode 551A, an electrode 551B, and a gap 551AB are formed on the insulating film 521.

For example, 1, 3-hexamethyldisilazane (abbreviated as HMDS) is vaporized to be sprayed onto a heated workpiece. Thus, for example, in the manufacturing process, the laminated film formed in the 2 nd step may not be easily peeled off from the electrode 551A.

[ step 2 ]

In step 2, first stacked films which are later referred to as a layer 104A, a layer 112A, a layer 111A, and a layer 113A are formed over the electrode 551A, the electrode 551B, and the gap 551AB, respectively.

[ step 3 ]

In step 3, a first film which will be the film 529_1 later is formed over the first stacked film.

[ step 4 ]

In step 4, an opening overlapping with the electrode 551B and the gap 551AB is formed in the first film by using photolithography.

[ step 5 ]

In step 5, a portion of the first stacked film is removed using the first film as a resist. For example, the first stacked film in the region overlapping with the electrode 551B and the region overlapping with the gap 551AB is removed using a dry etching method. Specifically, the first stacked film in the region overlapping with the electrode 551B and the region overlapping with the gap 551AB is removed using a gas containing oxygen. Thus, a groove-like structure can be formed in the first laminated film. Further, layer 104A, layer 112A, layer 111A, and layer 113A are formed.

In addition, in step 5, the electrode 551B is exposed to an etching gas for a dry etching method. For example, the conductivity of a conductive oxide such as indium oxide-tin oxide (abbreviated as ITO) or indium oxide-tin oxide containing silicon or silicon oxide (abbreviated as ITSO) is derived from an energy level formed by a tin atom or an oxygen vacancy. When the electrode 551B using these conductive oxides is exposed to an etching gas containing oxygen, oxygen is replenished. In addition, conductivity may be reduced and resistance may be increased. In addition, compared to the electrode 551A which performs hole transfer with the layer 104A, the electrode 551B is less likely to transfer holes to the layer 104B.

Further, by using a composition containing carbon tetrafluoride (abbreviated as CF ₄ ) The gas of (2) plasma-treating the electrode 551B exposed to the etching gas containing oxygen can improve the conductivity.

[ step 6 ]

In step 6, second stacked films which are later layers 104B, 112B, 111B, and 113B are formed over the electrode 551B and the gap 551AB, respectively.

In addition, by making the spin density of the layer 104B higher than that of the layer 104A, the electrode 551B easily transfers holes to the layer 104B. For example, when a composite material including an electron-receiving material AM and a hole-transporting material is used for the layers 104A and 104B, the weight percentage of the electron-receiving material included in the layer 104B is made higher than the weight percentage of the electron-receiving material included in the layer 104A when the combination of the composite materials is the same. Thereby, the spin density can be improved. In addition, the electrode 551B easily transfers holes to the layer 104B. Therefore, the rise of the driving voltage can be suppressed.

Further, the second stacked film includes a region overlapping with the electrode 551A.

[ step 7 ]

In step 7, a second film which will be the film 529_1 later is formed over the second stacked film.

[ step 8 ]

In step 8, an opening overlapping with the electrode 551A and the gap 551AB is formed in the second film by using photolithography.

[ step 9 ]

In step 9, a portion of the second laminated film is removed using the second film as a resist. For example, the second stacked film in the region overlapping with the electrode 551A and the region overlapping with the gap 551AB is removed using a dry etching method. Specifically, the second stacked film in the region overlapping with the electrode 551A and the region overlapping with the gap 551AB is removed using a gas containing oxygen. Thus, a groove-like structure can be formed in the second laminated film. Further, layer 104B, layer 112B, layer 111B, and layer 113B are formed.

In step 9, a gap 104AB is formed in the region overlapping with the gap 551AB.

[ step 10 ]

In step 10, for example, a third film which will be the film 529_2 later is formed over the first film and the second film by using an ALD method.

[ step 11 ]

In step 11, an insulating film 529_3 is formed. For example, a photosensitive polymer may be used. Thus, the opening portions 529_3a and 529_3b can be formed, and the gap 551AB can be filled.

[ step 12 ]

In step 12, a portion of the third film and the second film is removed using the insulating film 529_3 as a resist. For example, the film 529_2 and the film 529_1 are formed into a predetermined shape by forming an opening overlapping the electrode 551A and an opening overlapping the electrode 551B in the third film and the second film by etching.

Further, fluidity can be imparted to the insulating film 529_3 by heating the workpiece. Thereby, the end portion of the insulating film 529_3 can have a gentle shape.

[ step 13 ]

In step 13, layer 105 is formed over layer 113A and layer 113B. Next, a conductive film 552 is formed over the layer 105.

< structural example of display device 3>

In the display device 700 described in this embodiment, the maximum peak value of the emission spectrum of the light emitting material EMA is in the range of 380nm to 480nm, and the maximum peak value of the emission spectrum of the light emitting material EMB is in the range of 500nm to 550 nm.

Alternatively, in the display device 700 described in this embodiment, the maximum peak value of the emission spectrum of the light emitting material EMA is in the range of 380nm to 480nm, and the maximum peak value of the emission spectrum of the light emitting material EMB is in the range of 600nm to 780 nm.

This can expand the color gamut that can be displayed by the display device 700. Further, by using the light emitting material EMB having excitation energy smaller than that of the light emitting material EMA, the driving voltage of the light emitting device 550B can be suppressed. Further, power consumption of the display device 700 can be suppressed. In addition, even if the absorption intensity of the electron-receiving material AM at the wavelength of the maximum peak of the emission spectrum of the luminescent material EMA is higher than that of the emission spectrum of the luminescent material EMB, the phenomenon that the light emitted by the luminescent material EMA is absorbed by the layer 104A can be suppressed by making the weight percentage WA lower than the weight percentage WB. As a result, a novel display device with excellent convenience, practicality, and reliability can be provided.

< structural example of display device 4>

In the display device 700 described in this embodiment mode, the light-emitting material EMA is a light-emitting substance, and the light-emitting material EMB is a phosphorescent substance.

Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification.

Embodiment 2

In this embodiment mode, a structure of the light-emitting device 550X is described with reference to fig. 3A and 3B.

Fig. 3A is a cross-sectional view illustrating a structure of a light emitting device according to an embodiment of the present invention, and fig. 3B is a view illustrating energy levels of materials used for the light emitting device according to an embodiment of the present invention.

The structure of the light-emitting device 550X described in this embodiment mode can be used for a display device according to one embodiment of the present invention. Further, the description about the structure of the light emitting device 550X can be applied to the light emitting device 550A. Specifically, the symbol "X" for the structure of the light emitting device 550X may be replaced with "a" to explain the light emitting device 550A. Also, the symbol "X" is replaced with "B" or "C" to apply the structure of the light emitting device 550X to the light emitting device 550B or the light emitting device 550C.

< structural example of light-emitting device 550X >

The light-emitting device 550X described in this embodiment mode includes an electrode 551X, an electrode 552X, and a unit 103X. Electrode 552X overlaps electrode 551X, and unit 103X is sandwiched between electrode 552X and electrode 551X.

< structural example of cell 103X >

The unit 103X has a single-layer structure or a stacked-layer structure. For example, the cell 103X includes a layer 111X, a layer 112X, and a layer 113X (see fig. 3A). The unit 103X has a function of emitting light ELX.

Layer 111X is sandwiched between layer 113X and layer 112X, layer 113X is sandwiched between electrode 552X and layer 111X, and layer 112X is sandwiched between layer 111X and electrode 551X.

For example, a layer selected from a functional layer such as a light-emitting layer, a hole-transporting layer, an electron-transporting layer, and a carrier blocking layer may be used for the cell 103X. In addition, a layer selected from a functional layer such as a hole injection layer, an electron injection layer, an exciton blocking layer, and a charge generation layer may be used for the unit 103X.

Structural example of layer 112X

For example, a hole transporting material may be used for the layer 112X. In addition, the layer 112X may be referred to as a hole transport layer. Note that a material whose band gap is larger than that of the light-emitting material in the layer 111X is preferably used for the layer 112X. Therefore, energy transfer of excitons generated from the layer 111X to the layer 112X can be suppressed.

[ hole-transporting Material ]

Hole mobility can be set to 1×10 ^-6 cm ² The material of/Vs or more is suitably used for the hole transporting material.

For example, an amine compound or an organic compound having a pi-electron rich heteroaromatic ring skeleton may be used for the hole transporting material. Specifically, a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, or the like can be used. In particular, a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has good reliability and high hole-transporting property and contributes to reduction of driving voltage.

As the compound having an aromatic amine skeleton, for example, 4' -bis [ N- (1-naphthyl) -N-phenylamino ] biphenyl (abbreviated as NPB), N ' -diphenyl-N, N ' -bis (3-methylphenyl) 4,4' -diamine biphenyl (abbreviated as TPD), N ' -bis (9, 9' -spirodi [ 9H-fluoren ] -2-yl) -N, N ' -diphenyl-4, 4' -diamine biphenyl (abbreviated as BSPB), 4-phenyl-4 ' - (9-phenylfluoren-9-yl) triphenylamine (abbreviated as BPAFLP), 4-phenyl-3 ' - (9-phenylfluoren-9-yl) triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4 ' - (9-phenyl-9H-carbazole-3-yl) triphenylamine (abbreviated as PCBA1 BP), 4' -diphenyl-4 "- (9-phenyl-9H-carbazole-3-yl) triphenylamine (abbreviated as PCBA1 BP), 4- (1-naphthyl) -4' - (9-phenylfluoren-9-yl) triphenylamine, PCBA (abbreviated as PCBA1 BP) and ANB (abbreviated as ANB) can be used, 4' -bis (1-naphthyl) -4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCBAIB), 9-dimethyl-N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] fluoren-2-amine (abbreviated as PCBAF), N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -9,9' -spirodi [ 9H-fluoren ] -2-amine (abbreviated as PCBASF) and the like.

Examples of the compound having a carbazole skeleton include 1, 3-bis (N-carbazolyl) benzene (abbreviated as mCP), 4 '-bis (N-carbazolyl) biphenyl (abbreviated as CBP), 3, 6-bis (3, 5-diphenylphenyl) -9-phenylcarbazole (abbreviated as CzTP), and 3,3' -bis (9-phenyl-9H-carbazole) (abbreviated as PCCP).

As the compound having a thiophene skeleton, for example, 4' - (benzene-1, 3, 5-triyl) tris (dibenzothiophene) (abbreviated as DBT 3P-II), 2, 8-diphenyl-4- [4- (9-phenyl-9H-fluoren-9-yl) phenyl ] dibenzothiophene (abbreviated as DBTFLP-III), 4- [4- (9-phenyl-9H-fluoren-9-yl) phenyl ] -6-phenyldibenzothiophene (abbreviated as DBTFLP-IV) and the like can be used.

As the compound having a furan skeleton, for example, 4' - (benzene-1, 3, 5-triyl) tris (dibenzofuran) (abbreviated as DBF 3P-II), 4- {3- [3- (9-phenyl-9H-fluoren-9-yl) phenyl ] phenyl } dibenzofuran (abbreviated as mmDBFFLBi-II) and the like can be used.

Structural example of layer 113X

For example, an electron-transporting material, a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113X. In addition, the layer 113X may be referred to as an electron transport layer. Note that a material whose band gap is larger than that of the light-emitting material in the layer 111X is preferably used for the layer 113X. Therefore, energy transfer of excitons generated from the layer 111X to the layer 113X can be suppressed.

[ Electron-transporting Material ]

For example, the following materials may be suitably used for the electron-transporting material: at a square root of 600 in electric field strength V/cm, the electron mobility was 1X 10 ^-7 cm ² above/Vs and 5X 10 ^-5 cm ² Materials below/Vs. Thereby, the transmissibility of electrons in the electron transport layer can be controlled. Further, the electron injection amount into the light emitting layer can be controlled. Further, the light-emitting layer can be prevented from becoming in an electron-rich state.

For example, a metal complex or an organic compound having a pi-electron deficient heteroaromatic ring skeleton may be used for the electron transporting material.

As metal complexes, it is possible to use, for example, bis (10-hydroxybenzo [ h ]]Quinoline) beryllium (II) (abbreviation: beBq ₂ ) Bis (2-methyl-8-hydroxyquinoline) (4-phenylphenol) aluminum (III) (abbreviation: BAlq), bis (8-hydroxyquinoline) zinc (II) (abbreviation: znq), bis [2- (2-benzoxazolyl) phenol]Zinc (II) (ZnPBO for short), bis [2- (2-benzothiazolyl) phenol]Zinc (II) (abbreviated as ZnBTZ), and the like.

Examples of the organic compound having a pi-electron deficient heteroaromatic ring skeleton include a heterocyclic compound having a polyazole (polyazole) skeleton, a heterocyclic compound having a diazine skeleton, a heterocyclic compound having a pyridine skeleton, and a heterocyclic compound having a triazine skeleton. In particular, a heterocyclic compound having a diazine skeleton or a heterocyclic compound having a pyridine skeleton has good reliability, and is therefore preferable. In addition, the heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has high electron-transporting property, so that the driving voltage can be reduced.

As the heterocyclic compound having a polyoxazole skeleton, for example, 2- (4-biphenyl) -5- (4-tert-butylphenyl) -1,3, 4-oxadiazole (abbreviated as PBD), 3- (4-biphenyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2, 4-triazole (abbreviated as TAZ), 1, 3-bis [5- (p-tert-butylphenyl) -1,3, 4-oxadiazol-2-yl ] benzene (abbreviated as OXD-7), 9- [4- (5-phenyl-1, 3, 4-oxadiazol-2-yl) phenyl ] -9H-carbazole (abbreviated as CO 11), 2' - (1, 3, 5-benzenetriyl) tris (1-phenyl-1H-benzimidazole) (abbreviated as TPBI), 2- [3- (dibenzothiophen-4-yl) phenyl ] -1-phenyl-1H-benzimidazole (abbreviated as mDBIm-II) and the like can be used.

As the heterocyclic compound having a diazine skeleton, for example, 2- [3- (dibenzothiophen-4-yl) phenyl ] dibenzo [ f, H ] quinoxaline (abbreviated as: 2 mDBTPDBq-II), 2- [3'- (dibenzothiophen-4-yl) biphenyl-3-yl ] dibenzo [ f, H ] quinoxaline (abbreviated as: 2 mDBTBPDBq-II), 2- [3' - (9H-carbazol-9-yl) biphenyl-3-yl ] dibenzo [ f, H ] quinoxaline (abbreviated as: 2 mCzBPDBq), 4, 6-bis [3- (phenanthr-9-yl) phenyl ] pyrimidine (abbreviated as: 4,6 mPnP2Pm), 4, 6-bis [3- (4-dibenzothiophenyl) phenyl ] pyrimidine (abbreviated as: 4,6 mDBTP2Pm-II), 4, 8-bis [3- (dibenzothiophen-4-yl) phenyl ] -benzo [ H ] quinazoline (abbreviated as: 4,8 mPqBqn) and the like can be used.

As the heterocyclic compound having a pyridine skeleton, for example, 3, 5-bis [3- (9H-carbazol-9-yl) phenyl ] pyridine (abbreviated as 35 DCzPPy), 1,3, 5-tris [3- (3-pyridyl) phenyl ] benzene (abbreviated as TmPyPB) and the like can be used.

As the heterocyclic compound having a triazine skeleton, for example, 2- [3' - (9, 9-dimethyl-9H-fluoren-2-yl) ' biphenyl-3-yl ] -4, 6-diphenyl-1, 3, 5-triazine (abbreviated as mFBPTzn), 2- (biphenyl-4-yl) -4-phenyl-6- (9, 9' -spirodi [ 9H-fluoren ] -2-yl) -1,3, 5-triazine (abbreviated as BP-SFTzn), 2- {3- [3- (benzo [ b ] naphtho [1,2-d ] furan-8-yl) phenyl ] phenyl } -4, 6-diphenyl-1, 3, 5-triazine (abbreviated as mBnfBPTzn), 2- {3- [3- (benzo [ b ] naphtho [1,2-d ] furan-6-yl) phenyl ] phenyl } -4, 6-diphenyl-1, 3, 5-triazine (abbreviated as mBnfBPTzn-02) and the like can be used.

[ Material having an anthracene skeleton ]

An organic compound having an anthracene skeleton may be used for the layer 113X. In particular, an organic compound having both an anthracene skeleton and a heterocyclic skeleton can be suitably used.

For example, an organic compound having both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton may be used for the layer 113X. In addition, an organic compound containing both a nitrogen-containing five-membered ring skeleton and an anthracene skeleton, each containing two heteroatoms in the ring, may be used for the layer 113X. Specifically, a pyrazole ring, an imidazole ring, an oxazole ring, a thiazole ring, or the like can be suitably used for the heterocyclic skeleton.

For example, an organic compound having both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton may be used for the layer 113X. In addition, an organic compound containing both a nitrogen-containing six-membered ring skeleton and an anthracene skeleton, which contain two heteroatoms in the ring, may be used for the layer 113X. Specifically, a pyrazine ring, a pyridine ring, a pyridazine ring, or the like can be suitably used for the heterocyclic skeleton.

[ structural example of Mixed Material ]

In addition, a material in which a plurality of substances are mixed may be used for the layer 113X. Specifically, a mixed material containing an alkali metal, an alkali metal compound, or an alkali metal complex, or an electron-transporting substance may be used for the layer 113X. Note that the highest occupied molecular orbital (HOMO: highest Occupied Molecular Orbital) level of the electron-transporting material is more preferably-6.0 eV or more.

Note that this mixed material may be suitably used for the layer 113X in combination with a structure in which a composite material to be described otherwise is used for the layer 104X. For example, a composite material of an electron-receiving substance and a hole-transporting material may be used for the layer 104X. Specifically, a composite material of an electron-accepting substance and a substance having a deep HOMO level HM1 of-5.7 eV or more and-5.4 eV or less may be used for the layer 104X (see fig. 3B). By using this mixed material for the layer 113X in combination with the structure in which this composite material is used for the layer 104X, the reliability of the light-emitting device can be improved.

In addition, it is preferable to combine a structure in which the mixed material is used for the layer 113X and the above-described composite material is used for the layer 104X and a structure in which a hole-transporting material is used for the layer 112X. For example, a substance having a HOMO level HM2 in a range of-0.2 eV or more and 0eV or less with respect to the above-mentioned deep HOMO level HM1 may be used for the layer 112X (see fig. 3B). Thereby, the reliability of the light emitting device can be improved. Note that in this specification and the like, the above-described light-emitting device is sometimes referred to as a Recombination-Site Tailoring Injection structure (a reinsti structure).

The alkali metal, alkali metal compound, or alkali metal complex is preferably present in such a manner that there is a concentration difference (including the case where the concentration is 0) in the thickness direction of the layer 113X.

For example, a metal complex having an 8-hydroxyquinoline structure can be used. In addition, methyl substituents of metal complexes having an 8-hydroxyquinoline structure (e.g., 2-methyl substituents or 5-methyl substituents) and the like can also be used.

As the metal complex having an 8-hydroxyquinoline structure, 8-hydroxyquinoline-lithium (abbreviated as Liq), 8-hydroxyquinoline-sodium (abbreviated as Naq) and the like can be used. In particular, among the monovalent metal ion complexes, lithium complexes are preferably used, and Liq is more preferably used.

Structural example 1> of layer 111X

For example, a light-emitting material or a host material may be used for the layer 111X. In addition, the layer 111X may be referred to as a light emitting layer. The layer 111X is preferably disposed in a region where holes and electrons are recombined. This makes it possible to efficiently convert energy generated by carrier recombination into light and emit the light.

The layer 111X is preferably disposed away from the metal used for the electrode or the like. Therefore, occurrence of quenching phenomenon due to the metal used for the electrode or the like can be suppressed.

Further, it is preferable that the distance from the electrode or the like having reflectivity to the layer 111X is adjusted to dispose the layer 111X at an appropriate position corresponding to the emission wavelength. Thus, the amplitude can be mutually enhanced by utilizing the interference phenomenon between the light reflected by the electrode or the like and the light emitted by the layer 111X. Further, light of a predetermined wavelength can be intensified to narrow the spectrum. Further, a vivid emission color can be obtained at a high light intensity. In other words, by disposing the layer 111X at an appropriate position between electrodes or the like, a microcavity structure can be obtained.

For example, a fluorescent substance, a phosphorescent substance, or a substance exhibiting thermally activated delayed fluorescence (TADF: thermally Activated Delayed Fluorescence) (also referred to as TADF material) may be used for the light-emitting material. Thus, energy generated by recombination of carriers can be emitted from the light emitting material as light ELX (see fig. 3A).

[ fluorescent substance ]

A fluorescent substance may be used for the layer 111X. For example, the following fluorescent substance can be used for the layer 111X. Note that the fluorescent substance is not limited thereto, and various known fluorescent substances may be used for the layer 111X.

Specifically, 5, 6-bis [4- (10-phenyl-9-anthryl) phenyl ] -2,2' -bipyridine (abbreviation: PAP2 BPy), 5, 6-bis [4' - (10-phenyl-9-anthryl) biphenyl-4-yl ] -2,2' -bipyridine (abbreviated as PAPP2 BPy), N ' -diphenyl-N, N ' -bis [4- (9-phenyl-9H-fluoren-9-yl) phenyl ] pyrene-1, 6-diamine (abbreviated as 1,6 FLPAPRN), N ' -bis (3-methylphenyl) -N, N ' -bis [3- (9-phenyl-9H-fluoren-9-yl) phenyl ] pyrene-1, 6-diamine (abbreviated as 1,6 mMemfLPARN), N ' -bis [4- (9H-carbazol-9-yl) phenyl ] -N, N ' -diphenylstilbene-4, 4' -diamine (abbreviated as YGA 2S), 4- (9H-carbazol-9-yl) -4' - (10-phenyl-9-anthryl) triphenylamine (abbreviated as YGAPA), 4- (9H-carbazol-9-yl) diphenyl-4, 10-anthryl) triphenylamine (abbreviated as YGPa 2 PA, N, 9-diphenyl-N- [4- (10-phenyl-9-anthryl) phenyl ] -9H-carbazol-3-amine (abbreviated as PCAPA), perylene, 2,5,8, 11-tetra (tert-butyl) perylene (abbreviated as TBP), 4- (10-phenyl-9-anthryl) -4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCAPA), N "- (2-tert-butylanthracene-9, 10-diyl-4, 1-phenylene) bis (N, N ', N ' -triphenyl-1, 4-phenylenediamine) (abbreviated as DPABPA), N, 9-diphenyl-N- [4- (9, 10-diphenyl-2-anthryl) phenyl ] -9H-carbazol-3-amine (abbreviated as 2 PCAPPA), N ' - (pyrene-1, 6-diyl) bis [ (6, N-diphenyl benzo [ b ] naphtho [1,2-d ] furan) -8-amine (abbreviated as 1, brnn-1, 4-diphenylene-3-amine), N,9 ' -diphenyl-N- [4- (9, 10-diphenyl-anthryl) phenyl ] -9H-carbazol-3-amine (abbreviated as PCAPPA); 6,7-b' ] bis benzofuran-3, 10-diamine (abbreviated as: 3,10 PCA2Nbf (IV) -02), 3, 10-bis [ N- (dibenzofuran-3-yl) -N-phenylamino ] naphtho [2,3-b;6,7-b' ] bis-benzofuran (abbreviated as 3,10 FrA2Nbf (IV) -02) and the like.

In particular, a condensed aromatic diamine compound represented by a pyrenediamine compound such as 1,6flpaprn, 1,6 mmmemflpaprn, 1,6 bnfprn-03, etc. is preferable because it has high hole-trapping property and good luminous efficiency or reliability.

In addition, N- [4- (9, 10-diphenyl-2-anthracenyl) phenyl can be used]-N, N ', N ' -triphenyll-1, 4-phenylenediamine (abbreviated as 2 DPAPPA), N, N, N ', N ', N ", N", N ' "-octaphenyldibenzo [ g, p ]]-2,7, 10, 15-tetramine (DBC 1), coumarin 30, 9, 10-diphenyl-2- [ N-phenyl-N- (9-phenyl-carbazole-3-yl) amino group]Anthracene (abbreviated as 2 PCAPA), N- [9, 10-bis (biphenyl-2-yl) -2-anthryl]-N, 9-diphenyl-9H-carbazol-3-amine (abbreviated as 2 PCABPhA), N- (9, 10-diphenyl-2-anthryl) -N, N ', N' -triphenyl-1, 4-phenylenediamine (abbreviated as 2 DPAPA), N- [9, 10-bis (biphenyl-2-yl) -2-anthryl]-N, N ', N' -triphenyll-1, 4-phenylenediamine (abbreviated as 2 DPABPhA), 9, 10-bis (biphenyl-2-yl) -N- [4- (9H-carbazol-9-yl) phenyl]-N-phenylanthracene-2-amine (abbreviated as 2 YGABAPhA), N, 9-triphenylanthracene-9-amine (abbreviated as DPhAPHA), coumarin 545T, N, N '-diphenylquinacridone (abbreviated as DPqd), rubrene, 5, 12-bis (1, 1' -biphenyl-4-yl) -6, 11-diphenyltetracene (abbreviated as BPT) and the like.

In addition, 2- (2- {2- [4- (dimethylamino) phenyl ] vinyl } -6-methyl-4H-pyran-4-ylidene) malononitrile (abbreviated as: DCM 1), 2- { 2-methyl-6- [2- (2, 3,6, 7-tetrahydro-1H, 5H-benzo [ ij ] quinolizin-9-yl) vinyl ] -4H-pyran-4-ylidene } malononitrile (abbreviated as: DCM 2), N, N, N ', N' -tetrakis (4-methylphenyl) tetracene-5, 11-diamine (abbreviated as: p-mPHTD), 7, 14-diphenyl-N, N, N ', N' -tetrakis (4-methylphenyl) acenaphtho [1,2-a ] fluoranthene-3, 10-diamine (abbreviated as: p-mPHOFD), 2- { 2-isopropyl-6- [2- (1, 7-tetramethyl-2, 3,6, 7-tetrahydro-1H, 5H-benzo [ j ] quinolizin-9-yl) tetracene-5, 11-diamine (abbreviated as: p-mPHOTD), 7, 14-diphenyl-N, N, N, N ', N' -tetrakis (4-methylphenyl) acenaphthylene-3, 10-diamine (abbreviated as: p-mPHOFD), 2- { 2-isopropyl-6- [2- (1, 7-tetramethyl-2, 3, 7-tetrahydro-6-1H-benzo [ j ] quino-9-yl) naphthyridine-4-yl ] -2- (1, 7-methyl) can be used, 5H-benzo [ ij ] quinolizin-9-yl) vinyl ] -4H-pyran-4-ylidene } malononitrile (abbreviation: DCJTB), 2- (2, 6-bis {2- [4- (dimethylamino) phenyl ] vinyl } -4H-pyran-4-ylidene) malononitrile (abbreviation: bisDCM), 2- {2, 6-bis [2- (8-methoxy-1, 7-tetramethyl-2, 3,6, 7-tetrahydro-1H, 5H-benzo [ ij ] quinolizin-9-yl) vinyl ] -4H-pyran-4-ylidene } malononitrile (abbreviation: bisDCJTM), and the like.

[ phosphorescent substance ]

Phosphorescent materials may be used for the layer 111X. For example, the following phosphorescent substance may be used for the layer 111X. Note that the phosphorescent substance is not limited thereto, and various known phosphorescent substances may be used for the layer 111X.

For example, the following materials may be used for the layer 111X: an organometallic iridium complex having a 4H-triazole skeleton, an organometallic iridium complex having a 1H-triazole skeleton, an organometallic iridium complex having an imidazole skeleton, an organometallic iridium complex having an electron-withdrawing group and having a phenylpyridine derivative as a ligand, an organometallic iridium complex having a pyrimidine skeleton, an organometallic iridium complex having a pyrazine skeleton, an organometallic iridium complex having a pyridine skeleton, a rare earth metal complex, a platinum complex, or the like.

[ phosphorescent substance (blue) ]

Examples of the organometallic iridium complex having a 4H-triazole skeleton include tris {2- [5- (2-methylphenyl) -4- (2, 6-dimethylphenyl) -4H-1,2, 4-triazol-3-yl- κN }, and the like ² ]Phenyl-. Kappa.C } iridium (III) (abbreviated as: [ Ir (mpptz-dmp) ] ₃ ]) Tris (5-methyl-3, 4-diphenyl-4H-1, 2, 4-triazole) iridium (III) (abbreviation: [ Ir (Mptz) ₃ ]) Tris [4- (3-biphenyl)) -5-isopropyl-3-phenyl-4H-1, 2, 4-triazole (triazolato) ]Iridium (III) (abbreviated as: [ Ir (iPrtz-3 b) ₃ ]) Etc.

As the organometallic iridium complex having a 1H-triazole skeleton, for example, tris [ 3-methyl-1- (2-methylphenyl) -5-phenyl-1H-1, 2, 4-triazole (triazolato) can be used]Iridium (III) (abbreviated as: [ Ir (Mptz 1-mp) ] ₃ ]) Tris (1-methyl-5-phenyl-3-propyl-1H-1, 2, 4-triazole) iridium (III) (abbreviation: [ Ir (Prptz 1-Me) ₃ ]) Etc.

As the organometallic iridium complex having an imidazole skeleton, for example, fac-tris [1- (2, 6-diisopropylphenyl) -2-phenyl-1H-imidazole can be used]Iridium (III) (abbreviated: [ Ir (iPrim) ] ₃ ]) Tris [3- (2, 6-dimethylphenyl) -7-methylimidazo [1,2-f ]]Phenanthridine root (phenanthrinator)]Iridium (III) (abbreviated as: [ Ir (dmpimpt-Me) ] ₃ ]) Etc.

Examples of organometallic iridium complexes having phenylpyridine derivatives having electron withdrawing groups as ligands include bis [2- (4 ',6' -difluorophenyl) pyridine-N, C ^2’ ]Iridium (III) tetrakis (1-pyrazole) borate (FIr 6 for short), bis [2- (4 ',6' -difluorophenyl) pyridinato-N, C ^2’ ]Iridium (III) picolinate (FIrpic), bis {2- [3',5' -bis (trifluoromethyl) phenyl ]]pyridine-N, C ^2’ Iridium (III) picolinate (abbreviation: [ Ir (CF) ₃ ppy) ₂ (pic)]) Bis [2- (4 ',6' -difluorophenyl) pyridino-N, C ^2’ ]Iridium (III) acetylacetonate (abbreviated as FIracac) and the like.

The above-mentioned substance is a compound that emits blue phosphorescence, and is a compound having a peak of an emission wavelength at 440nm to 520 nm.

[ phosphorescent substance (Green) ]

As an organometallic iridium complex having a pyrimidine skeleton, for example, tris (4-methyl-6-phenylpyrimidino) iridium (III) (abbreviated as: [ Ir (mppm)) ₃ ]) Tris (4-tert-butyl-6-phenylpyrimidinyl) iridium (III) (abbreviation: [ Ir (tBuppm) ₃ ]) (acetylacetonato) bis (6-methyl-4-phenylpyrimidino) iridium (III) (abbreviation: [ Ir (mppm) ₂ (acac)]) (acetylacetonato) bis (6-t-butyl-4-phenylpyrimidinate)) Iridium (III) (abbreviation: [ Ir (tBuppm) ₂ (acac)]) (acetylacetonato) bis [6- (2-norbornyl) -4-phenylpyrimidinyl ]]Iridium (III) (abbreviated as: [ Ir (nbppm) ] ₂ (acac)]) (acetylacetonato) bis [ 5-methyl-6- (2-methylphenyl) -4-phenylpyrimidinyl ]]Iridium (III) (abbreviated: [ Ir (mpmppm)) ₂ (acac)]) (acetylacetonate) bis (4, 6-diphenylpyrimidinyl) iridium (III) (abbreviation: [ Ir (dppm) ₂ (acac)]) Etc.

As an organometallic iridium complex having a pyrazine skeleton, for example, (acetylacetonato) bis (3, 5-dimethyl-2-phenylpyrazino) iridium (III) (abbreviated as: [ Ir (mppr-Me) ], may be used ₂ (acac)]) (acetylacetonato) bis (5-isopropyl-3-methyl-2-phenylpyrazinyl) iridium (III) (abbreviation: [ Ir (mppr-iPr) ₂ (acac)]) Etc.

Examples of the organometallic iridium complex having a pyridine skeleton include tris (2-phenylpyridyl-N, C) ^2’ ) Iridium (III) (abbreviation: [ Ir (ppy) 3]) Bis (2-phenylpyridyl-N, C) ^2’ ) Iridium (III) acetylacetonate (abbreviation: [ Ir (ppy) ₂ (acac)]) Bis (benzo [ h ]]Quinoline) iridium (III) acetylacetonate (abbreviation: [ Ir (bzq) ₂ (acac)]) Tris (benzo [ h ]]Quinoline) iridium (III) (abbreviation: [ Ir (bzq) ₃ ]) Tris (2-phenylquinoline-N, C ^2’ ]Iridium (III) (abbreviated as: [ Ir (pq) ] ₃ ]) Bis (2-phenylquinoline-N, C) ^2’ ) Iridium (III) acetylacetonate (abbreviation: [ Ir (pq) ₂ (acac)])、[2-d ₃ -methyl-8- (2-pyridinyl- κN) benzofuro [2,3-b]Pyridine-kappa C]Bis [2- (5-d) ₃ -methyl-2-pyridinyl- κn ² ) Phenyl-kappa C]Iridium (III) (abbreviation:

[Ir(5mppy-d ₃ ) ₂ (mbfpypy-d ₃ )])、[2-d ₃ -methyl- (2-pyridinyl- κN) benzofuro [2,3-b]Pyridine-kappa C]Bis [2- (2-pyridinyl- κN) phenyl- κC]Iridium (III) (abbreviated as: [ Ir (ppy)) ₂ (mbfpypy-d ₃ )]) Etc.

Examples of the rare earth metal complex include tris (acetylacetonate) (Shan Feige) terbium (III) (abbreviated as: [ Tb (acac) ] ₃ (Phen)]) Etc.

The above-mentioned substances are mainly compounds that emit green phosphorescence and have peaks of light emission wavelength at 500nm to 600 nm. In addition, an organometallic iridium complex having a pyrimidine skeleton is particularly preferable because it has particularly excellent reliability or luminous efficiency.

[ phosphorescent substance (Red) ]

Examples of the organometallic iridium complex having a pyrimidine skeleton include (diisobutyrylmethane) bis [4, 6-bis (3-methylphenyl) pyrimidine radical]Iridium (III) (abbreviated as: [ Ir (5 mdppm) ] ₂ (dibm)]) Bis [4, 6-bis (3-methylphenyl) pyrimidinyl) (dipivaloylmethane) iridium (III) (abbreviation: [ Ir (5 mdppm) ₂ (dpm)]) Bis [4, 6-di (naphthalen-1-yl) pyrimidinyl]Ir (d 1 npm) iridium (III) (abbreviated as: [ Ir (d 1) npm) ₂ (dpm)]) Etc.

As an organometallic iridium complex having a pyrazine skeleton, for example, (acetylacetonato) bis (2, 3, 5-triphenylpyrazino) iridium (III) (abbreviated: [ Ir (tppr)) ₂ (acac)]) Bis (2, 3, 5-triphenylpyrazinyl) (dipivaloylmethane) iridium (III) (abbreviation: [ Ir (tppr) ₂ (dpm)]) (acetylacetonate) bis [2, 3-bis (4-fluorophenyl) quinoxaline (quinoxalato)]Iridium (III) (abbreviated: [ Ir (Fdpq)) ₂ (acac)]) Etc.

Examples of the organometallic iridium complex having a pyridine skeleton include tris (1-phenylisoquinoline-N, C ^2’ ) Iridium (III) (abbreviation: [ Ir (piq) ₃ ]) Bis (1-phenylisoquinoline-N, C ^2’ ) Iridium (III) acetylacetonate (abbreviation: [ Ir (piq) ₂ (acac)]) Etc.

As rare earth metal complexes, for example, tris (1, 3-diphenyl-1, 3-propanedionato) (Shan Feige in) europium (III) (abbreviated as: [ Eu (DBM) ] ₃ (Phen)]) Tris [1- (2-thenoyl) -3, 3-trifluoroacetonate](Shan Feige) europium (III) (abbreviated as [ Eu (TTA)) ₃ (Phen)]) Etc.

Examples of platinum complexes include 2,3,7,8, 12, 13, 17, 18-octaethyl-21H, 23H-porphyrin platinum (II) (abbreviated as PtOEP).

The above-mentioned substance is a compound that emits red phosphorescence and has a luminescence peak at 600nm to 700 nm. In addition, an organometallic iridium complex having a pyrazine skeleton can obtain red light emission having chromaticity which can be suitably used for a display device.

[ substance exhibiting delayed fluorescence by Thermal Activation (TADF) ]

TADF material may be used for layer 111X. Further, when a TADF material is used as the light-emitting substance, the S1 energy level of the host material is preferably higher than that of the TADF material. Further, the T1 energy level of the host material is preferably higher than the T1 energy level of the TADF material.

For example, the TADF material shown below may be used for the light-emitting material. Note that, without being limited thereto, various known TADF materials may be used.

Since the difference between the S1 energy level and the T1 energy level in the TADF material is small, the triplet excited state can be converted (up-converted) into the singlet excited state by the reverse intersystem crossing with a small amount of thermal energy. Thus, a singlet excited state can be efficiently generated from the triplet excited state. Furthermore, triplet excitation energy can be converted into luminescence.

An Exciplex (Exciplex) in which two substances form an excited state has a function of a TADF material capable of converting triplet excitation energy into singlet excitation energy because the difference between the S1 energy level and the T1 energy level is extremely small.

Note that as an index of the T1 level, a phosphorescence spectrum observed at a low temperature (for example, 77K to 10K) may be used. Regarding the TADF material, when the wavelength energy of the extrapolated line obtained by introducing the line at the tail on the short wavelength side of the fluorescence spectrum is at the S1 level and the wavelength energy of the extrapolated line obtained by introducing the line at the tail on the short wavelength side of the phosphorescence spectrum is at the T1 level, the difference between the S1 level and the T1 level is preferably 0.3eV or less, more preferably 0.2eV or less.

For example, fullerene and its derivatives, acridine and its derivatives, eosin derivatives, and the like can be used for TADF materials. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), or the like can be used for TADF materials.

Specifically, a protoporphyrin-tin fluoride complex (SnF) represented by the following structural formula can be used ₂ (protoIX)), mesoporphyrin-tin fluoride complex (SnF) ₂ (Meso IX)), hematoporphyrin-tin fluoride complex (SnF) ₂ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF) ₂ (Copro III-4 Me), octaethylporphyrin-tin fluoride Complex (SnF) ₂ (OEP)), protoporphyrin-tin fluoride complex (SnF) ₂ (Etio I)) and octaethylporphyrin-platinum chloride complex (PtCl) ₂ OEP), and the like.

[ chemical formula 1]

In addition, for example, a heterocyclic compound having one or both of a pi-electron rich type heteroaromatic ring and a pi-electron deficient type heteroaromatic ring may be used for the TADF material.

Specifically, 2- (biphenyl-4-yl) -4, 6-bis (12-phenylindol-2, 3-a ] carbazol-11-yl) -1,3, 5-triazine (abbreviated as PIC-TRZ), 9- (4, 6-diphenyl-1, 3, 5-triazin-2-yl) -9' -phenyl-9H, 9' H-3,3' -dicarbazole (abbreviated as PCCzTzn), 2- {4- [3- (N-phenyl-9H-carbazol-3-yl) -9H-carbazol-9-yl ] phenyl } -4, 6-diphenyl-1, 3, 5-triazine (abbreviated as PCCzPTzn), 2- [4- (10H-phenoxazin-10-yl) phenyl ] -4, 6-diphenyl-1, 3, 5-triazine (abbreviated as PXZ-TRZ), 3- [4- (5-phenyl-5, 10-dihydrophenazin-10-yl) phenyl ] -4, 5-diphenyl-1, 2H-carbazol-9-yl) phenyl } -4, 6-diphenyl-1, 3, 5-triazine (abbreviated as PCCzPTzn), 2- (10H-phenoxazin-10-yl) phenyl ] -4, 6-diphenyl-1, 3, 5-triazine (abbreviated as PPRXN-9-H-9-p-dioxanone) can be used, 9-dimethyl-9, 10-dihydroacridine) phenyl ] sulfolane (abbreviation: DMAC-DPS), 10-phenyl-10 h,10' h-spiro [ acridine-9, 9' -anthracene ] -10' -one (abbreviation: ACRSA), and the like.

[ chemical formula 2]

The heterocyclic compound has a pi-electron rich heteroaromatic ring and a pi-electron deficient heteroaromatic ring, and is preferably because of high electron transport property and hole transport property. In particular, among backbones having a pi-electron deficient heteroaromatic ring, a pyridine backbone, a diazine backbone (pyrimidine backbone, pyrazine backbone, pyridazine backbone) and a triazine backbone are preferable because they are stable and have good reliability. In particular, benzofuropyrimidine skeleton, benzothiophenopyrimidine skeleton, benzofuropyrazine skeleton, and benzothiophenopyrazine skeleton are preferable because they have high electron acceptance and good reliability.

Among the backbones having a pi-electron rich heteroaromatic ring, the acridine backbone, the phenoxazine backbone, the phenothiazine backbone, the furan backbone, the thiophene backbone, and the pyrrole backbone are stable and have good reliability, and therefore, it is preferable to have at least one of the foregoing backbones. The furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a dicarbazole skeleton, and a 3- (9-phenyl-9H-carbazol-3-yl) -9H-carbazole skeleton are particularly preferably used.

Among the materials in which the pi electron-rich heteroaromatic ring and the pi electron-deficient heteroaromatic ring are directly bonded, those in which both the electron donating property of the pi electron-rich heteroaromatic ring and the electron accepting property of the pi electron-deficient heteroaromatic ring are high and the energy difference between the S1 energy level and the T1 energy level is small, and thus thermally activated delayed fluorescence can be obtained efficiently are particularly preferable. In addition, instead of pi-electron deficient heteroaromatic rings, aromatic rings to which electron withdrawing groups such as cyano groups are bonded may also be used. Further, as the pi-electron rich skeleton, an aromatic amine skeleton, a phenazine skeleton, or the like can be used.

Examples of the pi electron-deficient skeleton include a xanthene skeleton, thioxanthene dioxide (thioxanthene dioxide) skeleton, oxadiazole skeleton, triazole skeleton, imidazole skeleton, anthraquinone skeleton, boron-containing skeleton such as phenylborane and boran, aromatic or heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile and cyanobenzene, carbonyl skeleton such as benzophenone, phosphine oxide skeleton and sulfone skeleton.

In this way, a pi electron-deficient backbone and a pi electron-rich backbone may be used in place of at least one of the pi electron-deficient heteroaromatic ring and the pi electron-rich heteroaromatic ring.

Structural example 2> of layer 111X

A material having carrier transport property may be used as the host material. For example, a hole-transporting material, an electron-transporting material, a substance exhibiting thermally activated delayed fluorescence (TADF: thermally Activated Delayed Fluorescence), a material having an anthracene skeleton, a mixed material, or the like can be used as the host material. Note that a material whose band gap is larger than that of the light-emitting material in the layer 111X is preferably used for the host material. Therefore, energy transfer from excitons to the host material generated by the layer 111X can be suppressed.

[ hole-transporting Material ]

Hole mobility can be set to 1×10 ^-6 cm ² The material of/Vs or more is suitably used for the hole transporting material. For example, a hole transporting material that can be used for the layer 112X can be used for the layer 111X.

[ Electron-transporting Material ]

Metal complexes or organic compounds having a pi-electron deficient heteroaromatic ring backbone can be used for the electron transporting material. For example, an electron-transporting material usable for the layer 113X may be used for the layer 111X.

[ Material having an anthracene skeleton ]

An organic compound having an anthracene skeleton can be used for the host material. In particular, when a fluorescent substance is used as the light-emitting substance, an organic compound having an anthracene skeleton is suitable. Thus, a light-emitting device having excellent light-emitting efficiency and durability can be realized.

As the organic compound having an anthracene skeleton, an organic compound having a diphenylanthracene skeleton, particularly a 9, 10-diphenylanthracene skeleton, is preferable because it is chemically stable. In addition, when the host material has a carbazole skeleton, hole injection and transport properties are improved, so that it is preferable. In particular, when the host material has a dibenzocarbazole skeleton, the HOMO level thereof is about 0.1eV shallower than carbazole, and not only hole injection is easy but also hole transport property and heat resistance are improved, which is preferable. Note that from the viewpoint of hole injection and transport properties described above, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.

Therefore, a substance having a 9, 10-diphenylanthracene skeleton and a carbazole skeleton, a substance having a 9, 10-diphenylanthracene skeleton and a benzocarbazole skeleton, and a substance having a 9, 10-diphenylanthracene skeleton and a dibenzocarbazole skeleton are preferably used as the host material.

For example, 6- [3- (9, 10-diphenyl-2-anthracene) phenyl ] benzo [ b ] naphtho [1,2-d ] furan (abbreviated as: 2 mBnfPPA), 9-phenyl-10- [4' - (9-phenyl-9H-fluoren-9-yl) biphenyl-4-yl ] anthracene (abbreviated as: FLPPA), 9- (1-naphthyl) -10- [4- (2-naphthyl) phenyl ] anthracene (abbreviated as: αN-. Beta. NPAnth), 9- [4- (9-phenylcarbazol-3-yl) ] phenyl-10-phenylanthracene (abbreviated as: PCzPA), 9- [4- (10-phenyl-9-anthracenyl) phenyl ] -9H-carbazole (abbreviated as: czPA), 7- [4- (10-phenyl-9-anthracenyl) phenyl ] -7H-dibenzo [ c, g ] carbazole (abbreviated as: cgDBzPA), 3- [4- (1-naphthyl) phenyl ] -9-phenyl-9H-carbazole (abbreviated as: PCzPA) and the like can be used.

In particular CzPA, cgDBCzPA, 2mBnfPPA, PCzPA exhibit very good properties.

[ Material exhibiting delayed fluorescence by Thermal Activation (TADF) ]

TADF material may be used as the host material. When a TADF material is used as a host material, triplet excitation energy generated in the TADF material can be converted into singlet excitation energy by intersystem crossing. In addition, excitation energy may be transferred to the light-emitting substance. In other words, the TADF material is used as an energy donor, and the light-emitting substance is used as an energy acceptor. Thereby, the light emitting efficiency of the light emitting device can be improved.

This is very effective when the above-mentioned luminescent substance is a fluorescent substance. In this case, the S1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent material in order to obtain high luminous efficiency. In addition, the T1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent substance. Therefore, the T1 energy level of the TADF material is preferably higher than the T1 energy level of the fluorescent substance.

In addition, it is preferable to use a TADF material that exhibits luminescence overlapping with the wavelength of the absorption band on the lowest energy side of the fluorescent substance. This is preferable because excitation energy is smoothly transferred from the TADF material to the fluorescent material, and light emission can be efficiently obtained.

In order to efficiently generate singlet excitation energy from triplet excitation energy through intersystem crossing, recombination of carriers is preferably generated in the TADF material. Further, it is preferable that the triplet excitation energy generated in the TADF material is not transferred to the triplet excitation energy of the fluorescent substance. For this reason, the fluorescent material preferably has a protecting group around a light-emitting body (skeleton which causes light emission) included in the fluorescent material. The protecting group is preferably a substituent having no pi bond, preferably a saturated hydrocarbon, specifically, an alkyl group having 3 or more and 10 or less carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 or more and 10 or less carbon atoms, or a trialkylsilyl group having 3 or more and 10 or less carbon atoms, and more preferably a plurality of protecting groups. The substituent group having no pi bond has little effect on carrier transport or carrier recombination because of little function of carrier transport, and can distance the TADF material and the light-emitting body of the fluorescent substance from each other.

Here, the light-emitting body refers to an atomic group (skeleton) that causes light emission in the fluorescent substance. The luminophore is preferably a skeleton with pi bonds, preferably with aromatic rings, and preferably with fused aromatic rings or fused heteroaromatic rings.

As the above-mentioned light-emitting body, examples thereof include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a combination thereof, and a combination thereof,A skeleton, a triphenylene skeleton, a naphthacene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, a naphthobisbenzofuran skeleton, and the like. In particular, it has a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, < - > and->Fluorescent substances having a skeleton, triphenylene skeleton, naphthacene skeleton, pyrene skeleton, perylene skeleton, coumarin skeleton, quinacridone skeleton, and naphthobisbenzofuran skeleton have high fluorescence quantum yields, and are therefore preferable.

For example, TADF materials that can be used for the light-emitting material may be used for the host material.

[ structural example of Mixed Material 1]

In addition, a material in which a plurality of substances are mixed may be used for the host material. For example, an electron-transporting material and a hole-transporting material can be used for the mixed material. The weight ratio of the hole-transporting material to the electron-transporting material in the mixed material may be (hole-transporting material/electron-transporting material) = (1/19) or more and (19/1) or less. This makes it possible to easily adjust the carrier transport property of the layer 111X. In addition, the control of the composite region can be performed more simply.

[ structural example of Mixed Material 2]

A material mixed with a phosphorescent substance may be used for the host material. The phosphorescent substance may be used as an energy donor for supplying excitation energy to a fluorescent substance when a fluorescent substance is used as a light-emitting substance.

[ structural example of Mixed Material 3]

A mixed material containing an exciplex-forming material may be used for the host material. For example, a material in which the emission spectrum of the formed exciplex overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance can be used for the host material. Therefore, energy transfer can be made smooth, and light emission efficiency can be improved. Further, the driving voltage can be suppressed. By adopting such a structure, light emission of ExTET (Excilex-Triplet Energy Transfer: exciplex-triplet energy transfer) utilizing energy transfer from an Exciplex to a light-emitting substance (phosphorescent material) can be obtained efficiently.

Phosphorescent materials may be used for at least one of the materials forming the exciplex. Thus, the intersystem crossing can be utilized. Alternatively, the triplet excitation energy can be efficiently converted into the singlet excitation energy.

The HOMO level of the hole transporting material is preferably equal to or higher than the HOMO level of the electron transporting material as a combination of materials forming the exciplex. Alternatively, the lowest unoccupied molecular orbital (LUMO: lowest Unoccupied Molecular Orbital) level of the hole-transporting material is preferably equal to or higher than the LUMO level of the electron-transporting material. Thus, an exciplex can be efficiently formed. The LUMO level and HOMO level of the material can be obtained from electrochemical characteristics (reduction potential and oxidation potential). Specifically, the reduction potential and the oxidation potential can be measured by Cyclic Voltammetry (CV) measurement.

Note that the formation of an exciplex can be confirmed by, for example, the following method: comparing the emission spectrum of the hole transporting material, the emission spectrum of the electron transporting material, and the emission spectrum of a mixed film formed by mixing these materials, it is explained that an exciplex is formed when a phenomenon is observed in which the emission spectrum of the mixed film shifts to the long wavelength side (or has a new peak on the long wavelength side) than the emission spectrum of each material. Alternatively, when transient PL of the hole transporting material, transient PL of the electron transporting material, and transient PL of a mixed film obtained by mixing these materials are compared, the formation of an exciplex is described when transient PL lifetime of the mixed film is observed to be different from transient response such as having a longer lifetime component or a larger ratio of delay components than the transient PL lifetime of each material. In addition, the above-described transient PL may be referred to as transient Electroluminescence (EL). In other words, the transient EL of the hole transporting material, the transient EL of the electron transporting material, and the transient EL of the mixed film of these materials were compared, and the difference in transient response was observed, so that the formation of an exciplex was confirmed.

This embodiment mode can be appropriately combined with other embodiment modes shown in this specification.

Embodiment 3

< structural example of light-emitting device 550X >

The light-emitting device 550X described in this embodiment mode includes an electrode 551X, an electrode 552X, a unit 103X, and a layer 104X. Electrode 552X overlaps electrode 551X, with cell 103X located between electrode 551X and electrode 552X. Further, layer 104X is located between electrode 551X and cell 103X. Note that, for example, the structure described in embodiment mode 2 can be used for the unit 103X.

< structural example of electrode 551X >

For example, a conductive material may be used for the electrode 551X. Specifically, a single layer or a stacked layer of a film containing a metal, an alloy, or a conductive compound may be used for the electrode 551X.

For example, a film that efficiently reflects light may be used for the electrode 551X. Specifically, an alloy containing silver, copper, or the like, an alloy containing silver, palladium, or the like, or a metal film of aluminum or the like may be used for the electrode 551X.

For example, a metal film that transmits light partially and reflects light partially may be used for the electrode 551X. Thereby, the light emitting device 550X may have a microcavity structure. Furthermore, light of a predetermined wavelength can be extracted more efficiently than other light. Furthermore, light having a narrow half-width of the spectrum can be extracted. In addition, light of a vivid color can be extracted.

For example, a film having transparency to visible light may be used for the electrode 551X. Specifically, a single layer or a stacked layer of a metal film, an alloy film, or a conductive oxide film, which is thin to the extent of transmitting light, may be used for the electrode 551X.

In particular, a material having a work function of 4.0eV or more is preferably used for the electrode 551X.

For example, a conductive oxide containing indium may be used. Specifically, indium oxide-tin oxide (abbreviated as ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviated as ITSO), indium oxide-zinc oxide, indium oxide containing tungsten oxide and zinc oxide (abbreviated as IWZO), or the like can be used.

Further, for example, a conductive oxide containing zinc may be used. Specifically, zinc oxide to which gallium is added, zinc oxide to which aluminum is added, or the like can be used.

Further, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or a nitride of a metal material (for example, titanium nitride) or the like may be used. In addition, graphene may be used.

Structural example 1 of layer 104X

For example, a hole injecting material may be used for the layer 104X. In addition, the layer 104X may be referred to as a hole injection layer.

For example, the electric field strength [ V/cm ]]The space-time mobility is 1X 10 when the square root of (1) is 600 ^-3 cm ² Materials below/Vs are used for layer 104X. Furthermore, it is possible to have a 1×10 ⁴ Omega cm or more and 1X 10 ⁷ Films with resistivity of Ω·cm or less are used for the layer 104X. Furthermore, the layer 104X preferably has a thickness of 5X 10 ⁴ Omega cm or more and 1X 10 ⁷ Resistivity of Ω·cm or less, more preferably 1×10 ⁵ Omega cm or more and 1X 10 ⁷ Resistivity of Ω·cm or less.

Structural example 2> of layer 104X

Specifically, an electron-receiving substance may be used for the layer 104X. In addition, a composite material containing a plurality of substances may be used for the layer 104X. Thus, holes can be easily injected from the electrode 551X, for example. Further, the driving voltage of the light emitting device 550X may be reduced.

[ Electron-receiving Material ]

An organic compound and an inorganic compound can be used for the electron-accepting substance. The electron-receiving material is capable of extracting electrons from an adjacent hole-transporting layer or hole-transporting material.

For example, a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used for the electron-accepting substance. In addition, the electron-accepting organic compound can be easily deposited by vapor deposition. Accordingly, productivity of the light emitting device 550X may be improved.

Specifically, 7, 8-tetracyano-2, 3,5, 6-tetrafluoroquinone dimethane (abbreviated as F4-TCNQ), chlorquinone, 2,3,6,7, 10, 11-hexacyanogen-1,4,5,8,9, 12-hexaazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7, 8-hexafluorotetracyanogen (hexafluoroetracyano) -naphthoquinone dimethane (abbreviated as F6-TCNNQ), 2- (7-dicyanomethylene-1,3,4,5,6,8,9, 10-octafluoro-7H-pyrene-2-subunit) malononitrile and the like can be used.

In particular, compounds in which an electron withdrawing group such as HAT-CN is bonded to a condensed aromatic ring having a plurality of hetero atoms are thermally stable, and are therefore preferable.

In addition, the [3] decenyl derivative comprising an electron withdrawing group (particularly, a halogen group such as a fluoro group or a cyano group) is very high in electron accepting property, and is therefore preferable.

Specifically, α ', α "-1,2, 3-cyclopropanetrimethylene tris [ 4-cyano-2, 3,5, 6-tetrafluorobenzyl cyanide ], α ', α" -1,2, 3-cyclopropanetrimethylene tris [2, 6-dichloro-3, 5-difluoro-4- (trifluoromethyl) benzyl cyanide ], α ', α "-1,2, 3-cyclopropanetrimethylene tris [2,3,4,5, 6-pentafluorophenyl acetonitrile ], and the like can be used.

Further, a transition metal oxide such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, or manganese oxide can be used for the electron-accepting substance.

In addition, phthalocyanine compounds such as phthalocyanine (H for short) can be used ₂ Pc); phthalocyanine complex compounds such as copper phthalocyanine (abbreviated as CuPc) and the like; compounds having an aromatic amine skeleton, e.g. 4,4' -bis [ N- (4-diphenylaminophenyl) -N-phenylamino ]]Biphenyl (DPAB for short), N' -bis [ 4-bis (3-methylphenyl) aminophenyl]-N, N ' -diphenyl- '4,4' -diaminobiphenyl (abbreviated as DNTPD), and the like.

In addition, a polymer such as poly (3, 4-ethylenedioxythiophene)/poly (styrenesulfonic acid) (abbreviated as PEDOT/PSS) or the like can be used.

[ structural example 1 of composite Material ]

For example, a composite material containing an electron-receiving substance and a hole-transporting material may be used for the layer 104X. Thus, in addition to a material having a large work function, a material having a small work function can be used for the electrode 551X. Alternatively, the material for the electrode 551X may be selected from a wide range of materials, independent of work function.

For example, the number of the cells to be processed,a hole transporting material used in the composite material may be a compound having an aromatic amine skeleton, a carbazole derivative, an aromatic hydrocarbon having a vinyl group, a high molecular compound (oligomer, dendrimer, polymer, or the like), or the like. In addition, the hole mobility may be 1×10 ^-6 cm ² The material of/Vs or more is suitable for a hole transporting material in a composite material. For example, a hole transporting material that can be used for the layer 112X can be used as the composite material.

In addition, a substance having a deep HOMO level can be suitably used for a hole transporting material in the composite material. Specifically, the HOMO level is preferably-5.7 eV or more and-5.4 eV or less. Thus, holes can be easily injected into the cell 103X. In addition, holes can be easily injected into the layer 112X. Further, the reliability of the light emitting device 550X may be improved.

As the compound having an aromatic amine skeleton, for example, N '-bis (p-tolyl) -N, N' -diphenyl-p-phenylenediamine (abbreviated as DTDPPA), 4 '-bis [ N- (4-diphenylaminophenyl) -N-phenylamino ] biphenyl (abbreviated as DPAB), N' -bis [ 4-bis (3-methylphenyl) aminophenyl ] -N, N '-diphenyl-' 4,4 '-diaminobiphenyl' (abbreviated as DNTPD), 1,3, 5-tris [ N- (4-diphenylaminophenyl) -N-phenylamino ] benzene (abbreviated as DPA 3B) and the like can be used.

As the carbazole derivative, for example, 3- [ N- (9-phenylcarbazol-3-yl) -N-phenylamino ] -9-phenylcarbazole (abbreviated as: PCzPCA 1), 3, 6-bis [ N- (9-phenylcarbazol-3-yl) -N-phenylamino ] -9-phenylcarbazole (abbreviated as: PCzPCA 2), 3- [ N- (1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino ] -9-phenylcarbazole (abbreviated as: PCzPCN 1), 4' -bis (N-carbazolyl) biphenyl (abbreviated as: CBP), 1,3, 5-tris [4- (N-carbazolyl) phenyl ] benzene (abbreviated as: TCPB), 9- [4- (10-phenyl-9-anthracenyl) phenyl ] -9H-carbazole (abbreviated as: czPA), 1, 4-bis [4- (N-carbazolyl) phenyl ] -2,3,5, 6-tetraphenyl, and the like can be used.

As the aromatic hydrocarbon, for example, 2-t-butyl-9, 10-bis (2-naphthyl) anthracene (abbreviated as: t-BuDNA), 2-t-butyl-9, 10-bis (1-naphthyl) anthracene (abbreviated as: DPPA), 2-t-butyl-9, 10-bis (4-phenylphenyl) anthracene (abbreviated as: t-BuDBA), 9, 10-bis (2-naphthyl) anthracene (abbreviated as: DNA), 9, 10-diphenyl anthracene (abbreviated as: DPAnth), 2-t-butyl anthracene (abbreviated as: t-BuAnth), 9, 10-bis (4-methyl-1-naphthyl) anthracene (abbreviated as: DMNA), 2-t-butyl-9, 10-bis [2- (1-naphthyl) phenyl ] anthracene, 2,3,6, 7-tetramethyl-9, 10-bis (1-naphthyl) anthracene, 2, 7-bis (4-naphthyl) anthracene, 10-bis (2-t-methyl-1-naphthyl) anthracene, 10-bis (2, 10-diphenyl) anthracene, 10 '-biphenyl-9, 10' -bis (9, 10-diphenyl) anthracene, 6-pentacenyl) phenyl ] -9,9' -dianthracene, anthracene, naphthacene, rubrene, perylene, 2,5,8, 11-tetra (t-butyl) perylene, pentacene, coronene, and the like.

As the aromatic hydrocarbon having a vinyl group, for example, 4' -bis (2, 2-diphenylvinyl) biphenyl (abbreviated as DPVBi), 9, 10-bis [4- (2, 2-diphenylvinyl) phenyl ] anthracene (abbreviated as DPVPA) and the like can be used.

As the polymer compound, for example, poly (N-vinylcarbazole) (abbreviated as PVK), poly (4-vinyltriphenylamine) (abbreviated as PVTPA), poly [ N- (4- { N '- [4- (4-diphenylamino) phenyl ] phenyl-N' -phenylamino } phenyl) methacrylamide ] (abbreviated as PTPDMA), poly [ N, N '-bis (4-butylphenyl) -N, N' -bis (phenyl) benzidine ] (abbreviated as Poly-TPD) and the like can be used.

Further, for example, a substance having any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton can be suitably used for the hole transporting material of the composite material. Further, a substance containing an aromatic amine having a substituent including a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine including a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to nitrogen of an amine through an arylene group can be used. Note that when a substance including N, N-bis (4-biphenyl) amino groups is used, the reliability of the light emitting device 550X may be improved.

As these materials, for example, N- (4-biphenyl) -6, N-diphenylbenzo [ b ] naphtho [1,2-d ] furan-8-amine (abbreviation: bnfABP), N-bis (4-biphenyl) -6-phenylbenzo [ b ] naphtho [1,2-d ] furan-8-amine (abbreviation: BBABnf), 4' -bis (6-phenylbenzo [ b ] naphtho [1,2-d ] furan-8-yl) -4 "-phenyltriphenylamine (abbreviated as: bbnfbb 1 BP), N-bis (4-biphenyl) benzo [ b ] naphtho [1,2-d ] furan-6-amine (abbreviated as: BBABnf (6)), N-bis (4-biphenyl) benzo [ b ] naphtho [1,2-d ] furan-8-amine (abbreviated as: BBABnf (8)), N-bis (4-biphenyl) benzo [ b ] naphtho [2,3-d ] furan-4-amine (abbreviated as: BBABnf (II) (4)), N-bis [4- (dibenzofuran-4-yl) phenyl ] -4-amino-p-terphenyl (abbreviated as: DBfBB1 TP), N- [4- (dibenzothiophene-4-yl) phenyl ] -N-phenyl-4-benzidine (abbreviated as: thBA1 BP), 4- (2-naphthyl) -4',4 "-diphenyltriphenylamine (abbreviation: bbaβnb), 4- [4- (2-naphthyl) phenyl ] -4',4" -diphenyltriphenylamine (abbreviation: bbaβnbi), 4' -diphenyl-4 "- (6;1 ' -binaphthyl-2-yl) triphenylamine (abbreviation: bbaαnβnb), 4' -diphenyl-4" - (7;1 ' -binaphthyl-2-yl) triphenylamine (abbreviated as bbaαnβnb-03), 4' -diphenyl-4 "- (7-phenyl) naphthalen-2-yl triphenylamine (abbreviated as BBAP βnb-03), 4' -diphenyl-4" - (6;2 ' -binaphthyl-2-yl) triphenylamine (abbreviated as BBA (βn2) B), 4' -diphenyl-4 "- (7;2 ' -binaphthyl-2-yl) -triphenylamine (abbreviated as BBA (βn2) B-03), 4' -diphenyl-4" - (4;2 ' -binaphthyl-1-yl) triphenylamine (abbreviated as bbaβnαnb), 4,4' -diphenyl-4 "- (5;2 ' -binaphthyl-1-yl) triphenylamine (abbreviation: BBAβNαNB-02), 4- (4-biphenylyl) -4' - (2-naphthyl) -4" -phenyltriphenylamine (abbreviated as TPBiAβNB), 4- (3-biphenylyl) -4' - [4- (2-naphthyl) phenyl ] -4 "-phenyltriphenylamine (abbreviated as mTPBiAβNBi), 4- (4-biphenylyl) -4' - [4- (2-naphthyl) phenyl ] -4" -phenyltriphenylamine (abbreviated as TPBiAβNBi), 4-phenyl-4 ' - (1-naphthyl) triphenylamine (abbreviated as αNBA1 BP), 4' -bis (1-naphthyl) triphenylamine (abbreviated as αNBB1 BP), 4' -diphenyl-4 "- [4' - (carbazol-9-yl) biphenyl-4-yl ] triphenylamine (abbreviated as YGTBI 1), 4' - [4- (3-phenyl-9H-carbazol-9-yl) phenyl ] tris (1, 1' -biphenyl-4-yl) triphenylamine (abbreviated as YGTBI1 BP) 02, 4- [4'- (carbazol-9-yl) biphenyl-4-yl ] -4' - (2-naphthyl) -4 "-phenyltriphenylamine (abbreviated as YGTBup NB), N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -N- [4- (1-naphthyl) phenyl ] -9,9 '-spirodi [ 9H-fluoren ] -2-amine (abbreviated as PCBNBSF), N-bis (biphenyl' -4-yl) -9,9 '-spirodi [ 9H-fluoren ] -2-amine (abbreviated as BBASF), N-bis (biphenyl' -4-yl) -9,9 '-spirodi [ 9H-fluoren ] -4-amine (abbreviated as BBASF (4)), N- (biphenyl-2-yl) -N- (9, 9-dimethyl-9H-fluoren-2-yl) -9,9' -spirodi [ 9H-fluoren ] -4-amine (abbreviated as oFBiSF), N- (4-biphenyl) -N- (9, 9-dimethyl-9H-fluoren-2-yl) -bis (Fr-4-yl) -Bibenzofuran-4-amine (abbreviated as BBASF), N- [4- (1-naphthyl) phenyl ] -N- [3- (6-phenyldibenzofuran-4-yl) phenyl ] -1-naphthylamine (abbreviated as mPDBBBBN), 4-phenyl-4 '- (9-phenylfluoren-9-yl) triphenylamine (abbreviated as BPAFLP), 4-phenyl-3' - (9-phenylfluoren-9-yl) triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4 '- [4- (9-phenylfluoren-9-yl) phenyl ] triphenylamine (abbreviated as BPAFLBi), 4-phenyl-4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCBA1 BP), 4 '-diphenyl-4 "- (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCBBi1 BP), 4- (1-naphthyl) -4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCBB), 4 '-di (1-naphthyl) -4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCBB), 4 '-di (1-naphthyl) -4' - (9-phenyl-9-H-carbazol-3-yl) triphenylamine (abbreviated as PCBB), N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -9,9' -spirodi [ 9H-fluoren ] -2-amine (abbreviated as PCBASF), N- (biphenyl-4-yl) -N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -9, 9-dimethyl-9H-fluoren-2-amine (abbreviated as PCBAF), N-bis (9, 9-dimethyl-9H-fluoren-2-yl) -9,9' -spirodi-9H-fluoren-4-amine, N-bis (9, 9-dimethyl-9H-fluoren-2-yl) -9,9' -spirodi-9H-fluoren-3-amine, N-bis (9, 9-dimethyl-9H-fluoren-2-yl) -9,9' -spirodi-H-fluoren-2-amine, N-bis (9, 9-dimethyl-9H-fluoren-2-yl) -9,9' -spirodi-fluoren-2-amine, and the like.

[ structural example of composite Material 2]

For example, a composite material containing an electron-receiving material, a hole-transporting material, and an alkali metal fluoride or an alkaline earth metal fluoride can be used as the hole-injecting material. In particular, a composite material having an atomic ratio of fluorine atoms of 20% or more can be suitably used. Thus, the refractive index of the layer 104X can be reduced. Further, a layer having a low refractive index may be formed inside the light emitting device 550X. In addition, external quantum efficiency of the light emitting device 550X may be improved.

Embodiment 4

< structural example of light-emitting device 550X >

The light-emitting device 550X described in this embodiment mode includes an electrode 551X, an electrode 552X, a unit 103X, and a layer 105X. Electrode 552X includes a region overlapping with electrode 551X, and cell 103X includes a region sandwiched between electrode 551X and electrode 552X. Further, the layer 105X includes a region sandwiched between the unit 103X and the electrode 552X. Note that, for example, the structure described in embodiment mode 2 can be used for the unit 103X.

< structural example of electrode 552X >

For example, a conductive material may be used for the electrode 552X. Specifically, a single layer or a stacked layer of a material containing a metal, an alloy, or a conductive compound may be used for the electrode 552X.

For example, the material that can be used for the electrode 551X described in embodiment mode 3 can be used for the electrode 552X. In particular, a material having a lower work function than that of the electrode 551X is preferably used for the electrode 552X. Specifically, a material having a work function of 3.8eV or less may be used.

For example, an element belonging to group 1 of the periodic table, an element belonging to group 2 of the periodic table, a rare earth metal, and an alloy containing them can be used for the electrode 552X.

Specifically, lithium (Li), cesium (Cs), or the like, magnesium (Mg), calcium (Ca), strontium (Sr), or the like, europium (Eu), ytterbium (Yb), or the like, and an alloy containing them (for example, an alloy of magnesium and silver or an alloy of aluminum and lithium) may be used for the electrode 552X.

Structural example of layer 105X

For example, an electron injecting material may be used for the layer 105X. Further, the layer 105X may be referred to as an electron injection layer.

Specifically, a substance having electron-donating property can be used for the layer 105X. Alternatively, a composite material of an electron-donating substance and an electron-transporting material may be used for the layer 105X. Alternatively, an electron compound may be used for the layer 105X. Thus, electrons can be easily injected from the electrode 552X, for example. Alternatively, a material having a larger work function may be used for the electrode 552X in addition to a material having a smaller work function. Alternatively, the material for electrode 552X may be selected from a wide range of materials, independent of work function. Specifically, al, ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 552X. Further, the driving voltage of the light emitting device 550X may be reduced.

[ substance having Electron-donating property ]

For example, an alkali metal, an alkaline earth metal, a rare earth metal, or a compound thereof (oxide, halide, carbonate, or the like) can be used as the substance having electron donating property. In addition, an organic compound such as tetrathiatetracene (abbreviated as TTN), nickel dicyclopentadienyl, nickel decamethyidicyano-nickel, or the like can be used as a substance having electron donating property.

As the alkali metal compound (including oxides, halides, carbonates), lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, 8-hydroxyquinoline-lithium (abbreviated as "Liq"), and the like can be used.

As the alkaline earth metal compound (including oxides, halides, carbonates), calcium fluoride (CaF ₂ ) Etc.

[ structural example 1 of composite Material ]

In addition, a material that is compounded with a plurality of substances may be used for the electron injecting material. For example, a substance having electron donating property and an electron transporting material can be used for the composite material.

[ Electron-transporting Material ]

For example, the following materials may be applied to the electron-transporting material: at electric field strength [ V/cm ]]At 600 square root, electron mobility of 1×10 ^-7 cm ² above/Vs and 5X 10 ^-5 cm ² and/Vs or less. Thus, the electron injection amount into the light emitting layer can be controlled. Further, the light-emitting layer can be prevented from becoming in an electron-rich state.

A metal complex or an organic compound having a pi-electron deficient aromatic heterocyclic skeleton may be used for the electron transporting material. For example, an electron-transporting material that can be used for the layer 113X can be used for the layer 105X.

[ structural example of composite Material 2]

In addition, fluoride of alkali metal in a microcrystalline state and an electron transporting material can be used for the composite material. In addition, a fluoride of an alkaline earth metal in a microcrystalline state and an electron transporting material can be used for the composite material. In particular, a composite material containing 50wt% or more of a fluoride of an alkali metal or a fluoride of an alkaline earth metal can be suitably used. In addition, a composite material containing an organic compound having a bipyridine skeleton can be suitably used. Thus, the refractive index of the layer 105X can be reduced. In addition, external quantum efficiency of the light emitting device 550X may be improved.

[ structural example of composite Material 3]

For example, a composite material including a first organic compound having a non-common electron pair and a first metal may be used for the layer 105X. Further, the sum of the number of electrons of the first organic compound and the number of electrons of the first metal is preferably an odd number. The molar ratio of the first metal to 1 mole of the first organic compound is preferably 0.1 to 10, more preferably 0.2 to 2, and still more preferably 0.2 to 0.8.

Thus, the first organic compound having an unshared pair of electrons can interact with the first metal to form a single occupied molecular orbital (SOMO: singly Occupied Molecular Orbital). Further, in the case where electrons are injected from the electrode 552X to the layer 105X, a potential barrier existing therebetween can be reduced.

In addition, can be in layers105X a composite material is used, wherein the spin density of the layer 105X measured by electron spin resonance (ESR: electron spin resonance) is preferably 1X 10 ¹⁶ spins/cm ³ The above is more preferably 5×10 ¹⁶ spins/cm ³ The above is more preferably 1×10 ¹⁷ spins/cm ³ The above.

[ organic Compound having an unshared Electron pair ]

For example, an electron transporting material may be used for an organic compound having an unshared electron pair. For example, a compound having an aromatic heterocycle with a pi electron deficiency may be used. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used. Thereby, the driving voltage of the light emitting device 550X can be reduced.

Further, the LUMO level of the organic compound having an unshared electron pair is preferably not less than-3.6 eV and not more than-2.3 eV. In general, HOMO and LUMO levels of an organic compound can be estimated using CV (cyclic voltammetry), photoelectron spectroscopy, light absorption spectroscopy, reverse-light electron spectroscopy, or the like.

For example, as the organic compound having an unshared electron pair, 4, 7-diphenyl-1, 10-phenanthroline (abbreviated as BPhen), 2, 9-bis (naphthalen-2-yl) -4, 7-diphenyl-1, 10-phenanthroline (abbreviated as NBPhen), and diquinoxalino [2,3-a:2',3' -c ] phenazine (abbreviated as HATNA), 2,4, 6-tris [3'- (pyridin-3-yl) biphenyl-3-yl ] -1,3, 5-triazine (abbreviated as TmPPyTz), 2' - (1, 3-phenylene) bis [ (9-phenyl-1, 10-phenanthroline ]) (abbreviated as mPPHEN 2P), and the like. In addition, NBPhen has a high glass transition temperature (Tg) as compared with BPhen, and thus has high heat resistance.

Further, for example, copper phthalocyanine can be used as the organic compound having an unshared electron pair. The electron number of copper phthalocyanine is an odd number.

[ first Metal ]

For example, in the case where the number of electrons of the first organic compound having an unshared electron pair is an even number, a composite material of the first metal belonging to the odd group of the periodic table and the first organic compound may be used for the layer 105X.

For example, manganese (Mn) of a group 7 metal, cobalt (Co) of a group 9 metal, copper (Cu) of a group 11 metal, silver (Ag), gold (Au), aluminum (Al) of a group 13 metal, and indium (In) all belong to odd groups of the periodic table. In addition, the group 11 element has a low melting point as compared with the group 7 or group 9 element, and is suitable for vacuum evaporation. In particular, ag has a low melting point, so that it is preferable. In addition, by using a metal having low reactivity with water or oxygen for the first metal, moisture resistance of the light emitting device 550X can be improved.

By using Ag for the electrode 552X and the layer 105X, the adhesion between the layer 105X and the electrode 552X can be improved.

In addition, in the case where the number of electrons of the first organic compound having an unshared electron pair is odd, a composite material of the first metal belonging to the even group in the periodic table and the first organic compound may be used for the layer 105X. For example, iron (Fe) of the group 8 metal belongs to an even group in the periodic table.

[ electronic Compound ]

For example, a substance in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration may be used for the electron injecting material.

Embodiment 5

In this embodiment mode, a structure of a light-emitting device 550X is described with reference to fig. 4A.

Fig. 4A is a cross-sectional view illustrating a structure of a light emitting device according to an embodiment of the present invention.

< structural example of light-emitting device 550X >

The light-emitting device 550X described in this embodiment mode includes an electrode 551X, an electrode 552X, a unit 103X, and an intermediate layer 106X (see fig. 4A). Electrode 552X includes a region overlapping with electrode 551X, and cell 103X includes a region sandwiched between electrode 551X and electrode 552X. The intermediate layer 106X includes a region sandwiched between the electrode 552X and the cell 103X.

Structural example 1 of intermediate layer 106X

The intermediate layer 106X has a function of supplying electrons to the anode side and supplying holes to the cathode side by applying a voltage. In addition, the intermediate layer 106X may be referred to as a charge generation layer.

For example, the hole injecting material that can be used for the layer 104X described in embodiment 3 can be used for the intermediate layer 106X. Specifically, a composite material may be used for the intermediate layer 106X.

For example, a laminated film in which a film containing the composite material and a film containing a hole-transporting material are laminated may be used for the intermediate layer 106X. Note that a film containing a hole-transporting material is sandwiched between a film containing the composite material and a cathode.

Structural example 2 of intermediate layer 106X

The laminated film in which the layers 106X1 and 106X2 are laminated may be used for the intermediate layer 106X. Layer 106X1 includes a region sandwiched between cell 103X and electrode 552X, and layer 106X2 includes a region sandwiched between cell 103X and layer 106X1.

Structural example of layer 106X1

For example, a hole injecting material that can be used for the layer 104X described in embodiment 3 can be used for the layer 106X1. Specifically, a composite material may be used for the layer 106X1. Furthermore, it is possible to have a 1×10 ⁴ Omega cm or more and 1X 10 ⁷ Films with resistivity of Ω·cm or less are used for the layer 106X1. Layer 106X1 preferably has a thickness of 5X 10 ⁴ Omega cm or more and 1X 10 ⁷ Resistivity of Ω·cm or less, more preferably 1×10 ⁵ Omega cm or more and 1X 10 ⁷ Resistivity of Ω·cm or less.

Structural example of layer 106X2

For example, a material usable for the layer 105X described in embodiment 4 can be used for the layer 106X2.

Structural example 3 of intermediate layer 106X

The laminated film of the laminated layers 106X1, 106X2, and 106X3 may be used for the intermediate layer 106X. The intermediate layer 106X3 includes a region sandwiched between the layers 106X1 and 106X2.

Structural example of layer 106X3

For example, an electron-transporting material may be used for the layer 106X3. In addition, the layer 106X3 may be referred to as an electron relay layer. By using the layer 106X3, a layer on the anode side in contact with the layer 106X3 can be separated from a layer on the cathode side in contact with the layer 106X3. In addition, interaction between the layer in contact with the anode side of the layer 106X3 and the layer in contact with the cathode side of the layer 106X3 can be reduced. Thus, electrons can be smoothly supplied to the layer on the anode side in contact with the layer 106X3.

A substance whose LUMO energy level is between that of the electron-receiving substance in the layer 106X1 and that of the substance in the layer 106X2 can be suitably used for the layer 106X3.

For example, a material having a LUMO level in a range of-5.0 eV or more, preferably-5.0 eV or more and-3.0 eV or less may be used for the layer 106X3.

Specifically, a phthalocyanine-based material can be used for the layer 106X3. For example, copper phthalocyanine (abbreviated as CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand may be used for the layer 106X3.

Embodiment 6

In this embodiment mode, a structure of a light-emitting device 550X is described with reference to fig. 4B.

Fig. 4B is a sectional view illustrating a structure of a light emitting device according to an embodiment of the present invention, which has a structure different from that shown in fig. 4A.

< structural example of light-emitting device 550X >

The light-emitting device 550X described in this embodiment mode includes an electrode 551X, an electrode 552X, a cell 103X, an intermediate layer 106X, and a cell 103X2 (see fig. 4B).

The cell 103X is located between the electrode 552X and the electrode 551X, and the intermediate layer 106X is located between the electrode 552X and the cell 103X.

The cell 103X2 is located between the electrode 552X and the intermediate layer 106X. Note that the unit 103X2 has a function of emitting light ELX 2.

In other words, the light emitting device 550X includes a plurality of cells stacked between the electrode 551X and the electrode 552X. The number of the plurality of stacked units is not limited to 2, but may be 3 or more. A structure including a plurality of cells stacked between the electrode 551X and the electrode 552X and an intermediate layer 106X between the plurality of cells is sometimes referred to as a stacked light-emitting device or a tandem light-emitting device.

Therefore, high-luminance light emission can be obtained while keeping the current density low. Furthermore, reliability can be improved. Further, the driving voltage at the time of comparison at the same luminance can be reduced. Further, power consumption can be suppressed.

Structural example 1> of < cell 103X2 >

Cell 103X2 includes layer 111X2, layer 112X2, and layer 113X2. Layer 111X2 is located between layer 112X2 and layer 113X2.

Furthermore, a structure available for the unit 103X may be used for the unit 103X2. For example, the same structure as that of the unit 103X may be used for the unit 103X2.

Structural example 2> of unit 103X2

A different structure from that of the unit 103X may be used for the unit 103X2. For example, a structure that emits light having a hue different from the emission color of the cell 103X may be used for the cell 103X2.

Specifically, the red and green light emitting cells 103X and the blue light emitting cell 103X2 may be stacked and used. Thereby, a light emitting device emitting light of a desired color can be provided. For example, a light emitting device emitting white light may be provided.

Structural example of intermediate layer 106X

The intermediate layer 106X has a function of supplying electrons to one of the cell 103X and the cell 103X2 and supplying holes to the other thereof. For example, the intermediate layer 106X described in embodiment 5 can be used.

< method for manufacturing light-emitting device 550X >

For example, each layer of the electrode 551X, the electrode 552X, the cell 103X, the intermediate layer 106X, and the cell 103X2 can be formed by a dry method, a wet method, a vapor deposition method, a droplet discharge method, a coating method, a printing method, or the like. In addition, each constituent element may be formed by a different method.

Specifically, the light-emitting device 550X can be manufactured using a vacuum deposition device, an inkjet device, a coating device such as a spin coater, a gravure printing device, an offset printing device, a screen printing device, or the like.

The electrode may be formed by, for example, a wet method or a sol-gel method using a paste of a metal material. Further, an indium oxide-zinc oxide film may be formed by a sputtering method using a target material to which zinc oxide is added in an amount of 1wt% or more and 20wt% or less relative to indium oxide. Further, an indium oxide (IWZO) film containing tungsten oxide and zinc oxide may be formed by a sputtering method using a target material to which tungsten oxide of 0.5wt% or more and 5wt% or less and zinc oxide of 0.1wt% or more and 1wt% or less are added with respect to indium oxide.

Embodiment 7

In this embodiment mode, a structure of a display device according to an embodiment of the present invention will be described with reference to fig. 5A to 6.

Fig. 5A to 5C are diagrams illustrating a structure of a display device according to an embodiment of the present invention. Fig. 5A is a plan view of a display device according to an embodiment of the present invention, and fig. 5B is a plan view illustrating a part of fig. 5A. Fig. 5C is a cross-sectional view of the broken lines X1-X2, broken lines X3-X4, and a group of pixels 703 (i, j) shown in fig. 5A.

Fig. 6 is a circuit diagram illustrating a configuration of a display device according to an embodiment of the present invention.

Note that in this specification, a variable having a value of an integer of 1 or more may be used as a symbol. For example, (p) including a variable p having a value of an integer of 1 or more may be used to designate a part of a symbol of any one of the p components at maximum. For example, (m, n) including a variable m and a variable n, which are integers of 1 or more, may be used to designate a part of a symbol of any one of the maximum mxn components.

< structural example 1 of display device 700 >

The display device 700 according to one embodiment of the present invention includes a region 731 (see fig. 5A). Region 731 includes a group of pixels 703 (i, j).

Structural example 1> of < a group of pixels 703 (i, j)

The group of pixels 703 (i, j) includes a pixel 702A (i, j), a pixel 702B (i, j), and a pixel 702C (i, j) (see fig. 5B and 5C).

The pixel 702A (i, j) includes a pixel circuit 530A (i, j) and a light emitting device 550A. The light emitting device 550A is electrically connected to the pixel circuit 530A (i, j).

For example, the light-emitting device described in embodiment modes 2 to 6 can be used for the light-emitting device 550A.

Further, the pixel 702B (i, j) includes a pixel circuit 530B (i, j) and a light emitting device 550B, and the light emitting device 550B is electrically connected to the pixel circuit 530B (i, j). Likewise, the pixel 702C (i, j) includes a light emitting device 550C.

For example, the structure described in embodiment mode 1 can be used for the light-emitting devices 550A to 550C.

< structural example 2 of display device 700 >

The display device 700 according to one embodiment of the present invention includes the functional layer 540 and the functional layer 520 (see fig. 5C). The functional layer 540 overlaps the functional layer 520.

The functional layer 540 includes a light emitting device 550A.

The functional layer 520 includes pixel circuits 530A (i, j) and wirings (see fig. 5C). The pixel circuit 530A (i, j) is electrically connected to the wiring. For example, a conductive film provided in the opening 591A of the functional layer 520 may be used as a wiring for electrically connecting the terminal 519B and the pixel circuit 530A (i, j). The conductive material CP electrically connects the terminals 519B and the flexible printed board FPC 1. Further, for example, a conductive film provided in the opening 591B of the functional layer 520 may be used as the wiring.

< structural example 3 of display device 700 >

The display device 700 according to one embodiment of the present invention includes a driver circuit GD and a driver circuit SD (see fig. 5A).

Structural example of drive Circuit GD

The driving circuit GD supplies the first selection signal and the second selection signal.

Structural example of drive Circuit SD

The driving circuit SD supplies the first control signal and the second control signal.

Structural example of wiring

The wiring includes a conductive film G1 (i), a conductive film G2 (i), a conductive film S1 (j), a conductive film S2 (j), a conductive film ANO, a conductive film VCOM2, and a conductive film V0 (see fig. 6).

The conductive film G1 (i) is supplied with a first selection signal, and the conductive film G2 (i) is supplied with a second selection signal.

The conductive film S1 (j) is supplied with a first control signal, and the conductive film S2 (j) is supplied with a second control signal.

Structural example 1> of the < pixel Circuit 530A (i, j)

The pixel circuit 530A (i, j) is electrically connected to the conductive film G1 (i) and the conductive film S1 (j). The conductive film G1 (i) supplies the first selection signal, and the conductive film S1 (j) supplies the first control signal.

The pixel circuit 530A (i, j) drives the light emitting device 550A according to the first selection signal and the first control signal. Further, the light emitting device 550A emits light.

One electrode of the light emitting device 550A is electrically connected to the pixel circuit 530A (i, j), and the other electrode is electrically connected to the conductive film VCOM 2.

Structural example 2> of the < pixel Circuit 530A (i, j)

The pixel circuit 530A (i, j) includes a switch SW21, a switch SW22, a transistor M21, a capacitor C21 and a node N21.

The transistor M21 includes a gate electrode electrically connected to the node N21, a first electrode electrically connected to the light emitting device 550A, and a second electrode electrically connected to the conductive film ANO.

The switch SW21 includes a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1 (j), and a gate electrode having a function of controlling a conductive state or a nonconductive state according to the potential of the conductive film G1 (i).

The switch SW22 includes a first terminal electrically connected to the conductive film S2 (j) and a gate electrode having a function of controlling a conductive state or a nonconductive state according to the potential of the conductive film G2 (i).

The capacitor C21 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the second electrode of the switch SW 22.

Thereby, the image signal can be stored in the node N21. Further, the potential of the node N21 may be changed using the switch SW 22. Further, the potential of the node N21 may be used to control the intensity of light emitted by the light emitting device 550A. As a result, a novel device with good convenience, practicality, and reliability can be provided.

Structural example 3> of the < pixel Circuit 530A (i, j)

The pixel circuit 530A (i, j) includes a switch SW23, a node N22 and a capacitor C22.

The switch SW23 includes a first terminal electrically connected to the conductive film V0, a second terminal electrically connected to the node N22, and a gate electrode having a function of controlling the conductive state or the nonconductive state according to the potential of the conductive film G2 (i).

The capacitor C22 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the node N22.

Note that the first electrode of the transistor M21 is electrically connected to the node N22.

Embodiment 8

In this embodiment, a display module according to an embodiment of the present invention will be described.

< display Module >

Fig. 7 is a perspective view illustrating the structure of the display module 280.

The display module 280 includes the display device 100, an FPC290, or a connector. For example, the display device described in embodiment mode 1 can be used for the display device 100.

The FPC290 is supplied with signals or power from the outside to supply signals or power to the display device 100. Further, an IC may be mounted on the FPC 290. The connector is a mechanical part (mechanical component) for electrically connecting a conductor that can electrically connect the display device 100 to a member to be connected. For example, FPC290 may be used as a conductor. Further, the connector may separate the display device 100 from the connection object.

Display device 100A >

Fig. 8A is a sectional view illustrating the structure of the display device 100A. The display device 100A may be used for the display device 100 of the display module 280, for example. Substrate 301 corresponds to substrate 71 in fig. 7.

The display device 100A includes a substrate 301, a transistor 310, an element separation layer 315, an insulating layer 261, a capacitor 240, an insulating layer 255 (an insulating layer 255a, an insulating layer 255B, and an insulating layer 255 c), a light-emitting device 61R, a light-emitting device 61G, and a light-emitting device 61B. An insulating layer 261 is provided over the substrate 301, and the transistor 310 is located between the substrate 301 and the insulating layer 261. The insulating layer 255a is provided over the insulating layer 261, and the capacitor 240 is provided between the insulating layer 261 and the insulating layer 255a, and the insulating layer 255a is provided between the light emitting device 61R and the capacitor 240, between the light emitting device 61G and the capacitor 240, and between the light emitting device 61B and the capacitor 240.

[ transistor 310]

The transistor 310 includes a conductive layer 311, a pair of low-resistance regions 312, an insulating layer 313, and an insulating layer 314, a channel of which is formed in a portion of the substrate 301. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311, and is used as a gate insulating layer. The substrate 301 has a pair of low resistance regions 312 doped with impurities. The region is used as source and drain. The side of the conductive layer 311 is covered with an insulating layer 314.

The element separation layer 315 is embedded in the substrate 301 and is located between two adjacent transistors 310.

[ capacitor 240]

The capacitor 240 includes a conductive layer 241, a conductive layer 245 and an insulating layer 243, wherein the insulating layer 243 is located between the conductive layer 241 and the conductive layer 245. The conductive layer 241 is used as one electrode in the capacitor 240, the conductive layer 245 is used as the other electrode in the capacitor 240, and the insulating layer 243 is used as a dielectric of the capacitor 240.

The conductive layer 241 is located on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of a source and a drain of the transistor 310 through a plug 275 embedded in the insulating layer 261. The insulating layer 243 covers the conductive layer 241. The conductive layer 245 overlaps with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[ insulating layer 255]

The insulating layer 255 includes an insulating layer 255a, an insulating layer 255b, and an insulating layer 255c, and the insulating layer 255b is located between the insulating layer 255a and the insulating layer 255 c.

[ light-emitting device 61R, light-emitting device 61G, and light-emitting device 61B ]

The light emitting device 61R, the light emitting device 61G, and the light emitting device 61B are provided over the insulating layer 255 c. For example, the light-emitting devices described in embodiment modes 2 to 6 can be applied to the light-emitting device 61R, the light-emitting device 61G, and the light-emitting device 61B.

The light-emitting device 61R includes a conductive layer 171 and an EL layer 172R, and the EL layer 172R covers the top surface and the side surfaces of the conductive layer 171. Further, a sacrifice layer 270R is located on the EL layer 172R. The light-emitting device 61G includes a conductive layer 171 and an EL layer 172G, and the EL layer 172G covers the top surface and the side surfaces of the conductive layer 171. Further, a sacrifice layer 270G is located over the EL layer 172G. The light-emitting device 61B includes a conductive layer 171 and an EL layer 172B, and the EL layer 172B covers the top surface and the side surfaces of the conductive layer 171. Further, a sacrificial layer 270B is located on the EL layer 172B.

The conductive layer 171 is electrically connected to one of the source and the drain of the transistor 310 through the plug 256 embedded in the insulating layer 243, the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, and the plug 275 embedded in the insulating layer 261. The top surface of insulating layer 255c has a height that is identical or substantially identical to the height of the top surface of plug 256. Various conductive materials may be used for the plug.

[ protective layer 271, insulating layer 278, protective layer 273, adhesive layer 122]

The protective layer 271 and the insulating layer 278 are located between adjacent light emitting devices, for example, the light emitting device 61R and the light emitting device 61G, and the insulating layer 278 is provided on the protective layer 271. Further, a protective layer 273 is provided over the light emitting devices 61R, 61G, and 61B.

The adhesive layer 122 adheres the protective layer 273 and the substrate 120 together.

[ substrate 120]

Substrate 120 corresponds to substrate 73 in fig. 7. For example, a light shielding layer may be provided on a surface of the substrate 120 on the adhesive layer 122 side. In addition, various optical members may be arranged outside the substrate 120.

A thin film may be used as the substrate. In particular, a film having low water absorption can be suitably used. For example, the water absorption is preferably 1% or less, more preferably 0.1% or less. Thus, dimensional changes of the film can be suppressed. Further, the occurrence of wrinkles and the like can be suppressed. Further, a change in the shape of the display device can be suppressed.

For example, a polarizing plate, a retardation plate, a light diffusion layer (for example, a diffusion film), an antireflection layer, a condensing film (condensing film), and the like can be used as the optical member.

A material having high optical isotropy, that is, a material having a small birefringence, may be used for the substrate, and the circularly polarizing plate may be stacked on the display device. For example, a material having an absolute value of a phase difference (retardation value) of 30nm or less, preferably 20nm or less, and more preferably 10nm or less can be used for the substrate. For example, a cellulose triacetate (TAC, also referred to as Cellulose triacetate) film, a cycloolefin polymer (COP) film, a cycloolefin copolymer (COC) film, an acrylic resin film, or the like can be used for the film having high optical isotropy.

Further, an antistatic film that suppresses adhesion of dust, a film having water repellency that is less likely to be stained, a hard coat film that suppresses damage during use, a surface protection layer such as an impact absorbing layer, and the like may be disposed on the outer side of the substrate 120. For example, a glass layer or silicon dioxide (SiO _x ) DLC (diamond-like carbon), alumina (AlO) _x ) A polyester-based material, a polycarbonate-based material, or the like is used for the surface protective layer. In addition, a material having high visible light transmittance can be suitably used for the surface protective layer. In addition, a material having high hardness can be suitably used for the surface protective layer.

Display device 100B-

Fig. 8B is a sectional view illustrating the structure of the display device 100B. The display device 100B can be used for the display device 100 of the display module 280 (see fig. 7), for example.

The display device 100B includes a substrate 301, a light-emitting device 61W, a capacitor 240, and a transistor 310. The light emitting device 61W may emit white light, for example.

Further, the display device 100B includes a coloring layer 183R, a coloring layer 183G, and a coloring layer 183B. The colored layer 183R overlaps one light emitting device 61W, the colored layer 183G overlaps the other light emitting device 61W, and the colored layer 183B overlaps the other light emitting device 61W.

For example, the coloring layer 183R may transmit red light, the coloring layer 183G may transmit green light, and the coloring layer 183B may transmit blue light.

Display device 100C >

Fig. 9 is a sectional view illustrating the structure of the display device 100C. The display device 100C can be used for the display device 100 of the display module 280 (see fig. 7), for example. Note that in the following description of the display device, the same portions as those of the display device described above may be omitted.

The display device 100C includes a substrate 301B and a substrate 301A. The display device 100C includes a transistor 310B, a capacitor 240, a light emitting device 61R, a light emitting device 61G, a light emitting device 61B, and a transistor 310A. A channel of the transistor 310A is formed in a portion of the substrate 301A, and a channel of the transistor 310B is formed in a portion of the substrate 301B.

[ insulating layer 345, insulating layer 346]

An insulating layer 345 is in contact with the bottom surface of the substrate 301B, and an insulating layer 346 is over the insulating layer 261. For example, an inorganic insulating film which can be used for the protective layer 273 can be used for the insulating layer 345 and the insulating layer 346. The insulating layer 345 and the insulating layer 346 serve as protective layers, and diffusion of impurities to the substrate 301B and the substrate 301A can be suppressed.

[ plug 343]

Plug 343 passes through substrate 301B and insulating layer 345. The insulating layer 344 covers the sides of the plug 343. For example, an inorganic insulating film usable for the protective layer 273 can be used as the insulating layer 344. The insulating layer 344 serves as a protective layer, and can suppress diffusion of impurities to the substrate 301B.

[ conductive layer 342]

The conductive layer 342 is located between the insulating layer 345 and the insulating layer 346. Further, it is preferable that the conductive layer 342 is embedded in the insulating layer 335, and a surface formed by the conductive layer 342 and the insulating layer 335 is planarized. The conductive layer 342 is electrically connected to the plug 343.

[ conductive layer 341]

Conductive layer 341 is located between insulating layer 346 and insulating layer 335. Further, it is preferable that the conductive layer 341 is embedded in the insulating layer 336, and a surface formed by the conductive layer 341 and the insulating layer 336 is planarized. Conductive layer 341 is bonded to conductive layer 342. Thereby, the substrate 301A is electrically connected to the substrate 301B.

The conductive layer 341 preferably uses the same conductive material as the conductive layer 342. For example, a metal film containing an element selected from Al, cr, cu, ta, ti, mo, W, a metal nitride film (e.g., a titanium nitride film, a molybdenum nitride film, or a tungsten nitride film) containing the above element as a component, or the like can be used. Copper is particularly preferably used for the conductive layer 341 and the conductive layer 342. Thus, a cu—cu (copper-copper) direct bonding technique (a technique of conducting electricity by connecting pads of Cu (copper) to each other) can be employed.

Display device 100D-

Fig. 10 is a sectional view illustrating the structure of the display device 100D. The display device 100D can be used for the display device 100 of the display module 280 (see fig. 7), for example.

The display device 100D has a bump 347, and the bump 347 is connected to the conductive layer 341 and the conductive layer 342. In addition, the bump 347 electrically connects the conductive layer 341 and the conductive layer 342. For example, a conductive material including gold (Au), nickel (Ni), indium (In), tin (Sn), or the like may be used for the bump 347. Further, for example, solder may be used for the bump 347.

Further, the display device 100D includes an adhesive layer 348. Adhesive layer 348 bonds insulating layer 345 to insulating layer 346.

Display device 100E-

Fig. 11 is a sectional view illustrating the structure of the display device 100E. The display device 100E can be used for the display device 100 of the display module 280 (see fig. 7), for example. The substrate 331 corresponds to the substrate 71 in fig. 7. An insulating substrate or a semiconductor substrate may be used for the substrate 331. The display device 100E includes a transistor 320. The display device 100E differs from the display device 100A in that the transistor is configured as an OS transistor.

[ insulating layer 332]

An insulating layer 332 is disposed on the substrate 331. For example, a film in which hydrogen or oxygen is less likely to diffuse than a silicon oxide film can be used for the insulating layer 332. Specifically, an aluminum oxide film, a hafnium oxide film, a silicon nitride film, or the like can be used for the insulating layer 332. Thereby, the insulating layer 332 can prevent diffusion of impurities such as water and hydrogen from the substrate 331 to the transistor 320. Further, oxygen can be prevented from being released from the semiconductor layer 321 to the insulating layer 332 side.

[ transistor 320]

The transistor 320 includes a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

The conductive layer 327 is provided over the insulating layer 332 and is used as a first gate electrode of the transistor 320. The insulating layer 326 covers the conductive layer 327. A portion of the insulating layer 326 is used as a first gate insulating layer. The insulating layer 326 includes an oxide insulating film at least in a region in contact with the semiconductor layer 321. Specifically, a silicon oxide film or the like is preferably used. In addition, the insulating layer 326 has a planarized top surface. The semiconductor layer 321 is disposed on the insulating layer 326. A metal oxide film having semiconductor characteristics may be used for the semiconductor layer 321. A pair of conductive layers 325 contacts the semiconductor layer 321 and functions as a source electrode and a drain electrode.

Insulating layer 328, insulating layer 264]

The insulating layer 328 covers the top and side surfaces of the pair of conductive layers 325, the side surfaces of the semiconductor layer 321, and the like. An insulating layer 264 is provided over the insulating layer 328 and is used as an interlayer insulating layer. The insulating layers 328 and 264 have openings which reach the semiconductor layer 321. For example, an insulating film similar to the insulating layer 332 can be used as the insulating layer 328. Thus, the insulating layer 328 can prevent impurities such as water and hydrogen from diffusing from the insulating layer 264 to the semiconductor layer 321. Further, oxygen can be prevented from being detached from the semiconductor layer 321.

[ insulating layer 323]

The insulating layer 323 is in contact with the side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325, and the top surface of the semiconductor layer 321 in the opening.

[ conductive layer 324]

The conductive layer 324 is embedded in the opening portion so as to contact the insulating layer 323. The conductive layer 324 has a top surface subjected to planarization treatment, and has a height identical or substantially identical to the top surface of the insulating layer 323 and the top surface of the insulating layer 264. The conductive layer 324 is used as a second gate electrode, and the insulating layer 323 is used as a second gate insulating layer.

[ insulating layer 329, insulating layer 265]

The insulating layer 329 covers the conductive layer 324, the insulating layer 323, and the insulating layer 264. An insulating layer 265 is provided over the insulating layer 329 and is used as an interlayer insulating layer. For example, an insulating film similar to the insulating layer 328 and the insulating layer 332 can be used as the insulating layer 329. This prevents impurities such as water and hydrogen from diffusing from the insulating layer 265 to the transistor 320.

[ plug 274]

The plug 274 is embedded in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and is electrically connected to one of the pair of conductive layers 325. The plug 274 includes a conductive layer 274a and a conductive layer 274b. The conductive layer 274a contacts the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328. In addition, a portion of the top surface of conductive layer 325 is covered. The conductive layer 274b is in contact with the top surface of the conductive layer 274a. For example, a conductive material in which hydrogen and oxygen are not easily diffused can be used for the conductive layer 274a.

Display device 100F-

Fig. 12 is a sectional view illustrating the structure of the display device 100F. The display device 100F has a structure in which a transistor 320A and a transistor 320B are stacked. The transistor 320A and the transistor 320B each include an oxide semiconductor, and a channel thereof is formed in the oxide semiconductor. Note that the structure is not limited to a structure in which two transistors are stacked, and for example, a structure in which three or more transistors are stacked may be employed.

The structure of the transistor 320A and the vicinity thereof is the same as the structure of the transistor 320 and the vicinity thereof of the display device 100E described above. The structure of the transistor 320B and the vicinity thereof is the same as the structure of the transistor 320 and the vicinity thereof of the display device 100E described above.

Display device 100G-

Fig. 13 is a sectional view illustrating the structure of the display device 100G. The display device 100G has a structure in which a transistor 310 and a transistor 320 are stacked. The channel of transistor 310 is formed in substrate 301. In addition, the transistor 320 includes an oxide semiconductor in which a channel thereof is formed.

An insulating layer 261 covers the transistor 310, and a conductive layer 251 is disposed on the insulating layer 261. The insulating layer 262 covers the conductive layer 251, and the conductive layer 252 is disposed on the insulating layer 262. Further, the insulating layer 263 and the insulating layer 332 cover the conductive layer 252. Further, both the conductive layer 251 and the conductive layer 252 are used as wirings.

Transistor 320 is disposed on insulating layer 332 and insulating layer 265 covers transistor 320. Further, a capacitor 240 is provided over the insulating layer 265, and the capacitor 240 is electrically connected to the transistor 320 through the plug 274.

For example, the transistor 320 can be used as a transistor constituting a pixel circuit. Further, for example, the transistor 310 may be used as a transistor constituting a pixel circuit or may be used for a driving circuit (a gate driver circuit, a source driver circuit, or the like) for driving the pixel circuit. The transistors 310 and 320 can be used for various circuits such as an arithmetic circuit and a memory circuit. Thus, for example, a driving circuit may be provided in addition to the pixel circuit immediately below the light emitting device. Further, the display device can be further miniaturized as compared with a structure in which the driving circuit is provided in the vicinity of the display region.

At least a part of this embodiment can be implemented in combination with other embodiments described in this specification as appropriate.

Embodiment 9

< display Module >

Fig. 14 is a perspective view illustrating the structure of the display module.

The display module includes the display device 100, an IC (integrated circuit) 176, and an FPC177 or a connector. For example, the display device described in embodiment mode 1 can be used for the display device 100.

The display device 100 is electrically connected to the IC176 and the FPC 177. The FPC177 is externally supplied with signals and power, and supplies signals and power to the display device 100. The connector is a mechanical part that electrically connects a conductor that can electrically connect the display device 100 to a member to be connected. For example, FPC177 may be used as a conductor. Further, the connector may separate the display device 100 from the connection object.

The display module includes an IC176. For example, the IC176 may be provided over the substrate 14b by COG method or the like. For example, the IC176 may be provided On the FPC by a COF (Chip On Film) method or the like. For example, a gate driver circuit, a source driver circuit, or the like may be used for the IC176.

Display device 100H-

Fig. 15A is a sectional view illustrating the structure of the display device 100H.

The display device 100H includes a display portion 37b, a connection portion 140, a circuit 164, a wiring 165, and the like. The display device 100H includes a substrate 16b and a substrate 14b, and the substrate 16b is bonded to the substrate 14b. The display device 100H includes one or more connection portions 140. The connection portion 140 may be provided outside the display portion 37 b. For example, the connection portion 140 may be provided along one side of the display portion 37 b. Alternatively, it may be arranged in such a manner as to surround a plurality of sides, for example, four sides. In the connection portion 140, the common electrode of the light emitting device is electrically connected to a conductive layer that supplies a prescribed potential to the common electrode.

The wiring 165 is supplied with signals and power from the FPC177 or the IC 176. The wiring 165 supplies signals and power to the display portion 37b and the circuit 164.

For example, a gate driver circuit may be used as the circuit 164.

The display device 100H includes a substrate 14B, a substrate 16B, a transistor 201, a transistor 205, a light-emitting device 63R, a light-emitting device 63G, a light-emitting device 63B, and the like (see fig. 15A). For example, the light emitting device 63R emits red light 83R, the light emitting device 63G emits green light 83G, and the light emitting device 63B emits blue light 83B. Further, various optical members may be arranged outside the substrate 16 b. For example, a polarizing plate, a retardation plate, a light diffusion layer (for example, a diffusion film), an antireflection layer, a condensing film, and the like may be disposed.

For example, the light-emitting devices described in embodiment modes 2 to 6 can be applied to the light-emitting device 63R, the light-emitting device 63G, and the light-emitting device 63B.

The light emitting device includes a conductive layer 171, and the conductive layer 171 is used as a pixel electrode. The conductive layer 171 has a recess overlapping with openings provided in the insulating layer 214, the insulating layer 215, and the insulating layer 213. Further, the transistor 205 includes a conductive layer 222b, and the conductive layer 222b is electrically connected to the conductive layer 171.

The display device 100H includes an insulating layer 272. The insulating layer 272 covers an end portion of the conductive layer 171 and fills a recess portion of the conductive layer 171 (see fig. 15A).

The display device 100H includes a protective layer 273 and an adhesive layer 142. The protective layer 273 covers the light emitting devices 63R, 63G, and 63B. The adhesive layer 142 adheres the protective layer 273 to the substrate 16b. The adhesive layer 142 fills the space between the substrate 16b and the protective layer 273. For example, the frame-shaped adhesive layer 142 may be formed so as not to overlap the light-emitting device, and the region surrounded by the adhesive layer 142, the substrate 16b, and the protective layer 273 may be filled with a resin different from the adhesive layer 142. Alternatively, the space may be filled with an inert gas (nitrogen or argon, etc.), i.e., a hollow sealing structure may be employed. For example, a material that can be used for the adhesive layer 122 can be applied to the adhesive layer 142.

The display device 100H includes a connection portion 140, and the connection portion 140 includes a conductive layer 168. The conductive layer 168 is supplied with a power supply potential. Further, the light emitting device includes a conductive layer 173, the conductive layer 168 is electrically connected to the conductive layer 173, and the conductive layer 173 is supplied with a power supply potential. The conductive layer 173 is used as a common electrode. Further, for example, one conductive film may be processed to form the conductive layer 171 and the conductive layer 168.

The display device 100H is a top emission display device. The light emitting device emits light to the substrate 16b side. The conductive layer 171 includes a material that reflects visible light, and the conductive layer 173 transmits visible light.

[ insulating layer 211, insulating layer 213, insulating layer 215, insulating layer 214]

An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order over the substrate 14 b. Note that the number of insulating layers is not limited, and may be a single layer or two or more layers.

For example, an inorganic insulating film can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215. For example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum nitride film, or the like can be used. Further, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Further, two or more of the insulating films may be stacked.

The insulating layer 215 and the insulating layer 214 cover the transistor. The insulating layer 214 is used as a planarizing layer. For example, a material which is not easily diffused by impurities such as water and hydrogen is preferably used for the insulating layer 215 or the insulating layer 214. Thus, diffusion of impurities from the outside to the transistor can be effectively suppressed. In addition, the reliability of the display device can be improved.

For example, an organic insulating layer may be suitably used as the insulating layer 214. Specifically, an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimide amide resin, a silicone resin, a benzocyclobutene resin, a phenol resin, a precursor of the above-mentioned resins, or the like can be used as the organic insulating layer. In addition, a stacked structure of an organic insulating layer and an inorganic insulating layer can be used for the insulating layer 214. Thereby, the outermost surface layer of the insulating layer 214 can be used as an etching protection layer. For example, when it is intended to avoid a phenomenon in which a recess is formed in the insulating layer 214 when the conductive layer 171 is processed into a predetermined shape, the phenomenon can be suppressed.

[ transistor 201, transistor 205]

Both the transistor 201 and the transistor 205 are formed over the substrate 14 b. These transistors can be manufactured using the same material and the same process.

The transistor 201 and the transistor 205 include a conductive layer 221, an insulating layer 211, conductive layers 222a and 222b, a semiconductor layer 231, an insulating layer 213, and a conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The conductive layer 221 is used as a gate electrode, and the insulating layer 211 is used as a first gate insulating layer. The conductive layer 222a and the conductive layer 222b function as a source and a drain. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231. The conductive layer 223 is used as a gate electrode, and the insulating layer 213 is used as a second gate insulating layer. Here, the same hatching lines are attached to a plurality of layers obtained by processing the same conductive film.

The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, an interleaved transistor, an inverted interleaved transistor, or the like can be employed. In addition, the transistors may have either a top gate structure or a bottom gate structure. Alternatively, a gate electrode may be provided above and below the semiconductor layer forming the channel.

As the transistor 201 and the transistor 205, a structure in which a semiconductor layer forming a channel is sandwiched between two gates is adopted. Further, two gates may be connected to each other, and the same signal may be supplied to the two gates to drive the transistor. Alternatively, the threshold voltage of the transistor can be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other gate.

The crystallinity of the semiconductor layer of the transistor is not particularly limited, and an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor in which a part thereof has a crystalline region) can be used. The use of a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

The semiconductor layer of the transistor preferably contains a metal oxide. That is, the transistor included in the display device of this embodiment mode is preferably an OS transistor.

[ semiconductor layer ]

For example, indium oxide, gallium oxide, and zinc oxide can be used for the semiconductor layer. In addition, the metal oxide preferably contains two or three selected from indium, element M, and zinc. Note that the element M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium. In particular, the element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

In particular, as a metal oxide used for the semiconductor layer, an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used. Alternatively, an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)) is preferably used. Alternatively, oxides containing indium, gallium, tin, and zinc are preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO) is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO) is preferably used.

When the metal oxide used for the semiconductor layer is an in—m—zn oxide, the atomic ratio of In the in—m—zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic number ratio of the metal element of such an In-M-Zn oxide may be, for example, in: m: zn=1: 1:1 or the vicinity thereof, in: m: zn=1: 1:1.2 composition at or near, in: m: zn=1: 3:2 or the vicinity thereof, in: m: zn=1: 3:4 or the vicinity thereof, in: m: zn=2: 1:3 or the vicinity thereof, in: m: zn=3: 1:2 or the vicinity thereof, in: m: zn=4: 2:3 or the vicinity thereof, in: m: zn=4: 2:4.1 or the vicinity thereof, in: m: zn=5: 1:3 or the vicinity thereof, in: m: zn=5: 1:6 or the vicinity thereof, in: m: zn=5: 1:7 or the vicinity thereof, in: m: zn=5: 1:8 or the vicinity thereof, in: m: zn=6: 1:6 or the vicinity thereof, in: m: zn=5: 2:5 or a composition in the vicinity thereof. Note that the nearby composition includes a range of ±30% of the desired atomic number ratio.

For example, when the atomic ratio is described as In: ga: zn=4: 2:3 or its vicinity, including the following: in is 4, ga is 1 to 3, zn is 2 to 4. Note that, when the atomic ratio is expressed as In: ga: zn=5: 1:6 or its vicinity, including the following: in is 5, ga is more than 0.1 and not more than 2, and Zn is not less than 5 and not more than 7. Note that, when the atomic ratio is expressed as In: ga: zn=1: 1:1 or its vicinity, including the following: in is 1, ga is more than 0.1 and not more than 2, and Zn is more than 0.1 and not more than 2.

The semiconductor layer may include two or more metal oxide layers having different compositions. For example, in: m: zn=1: 3: a first metal oxide layer having a composition of 4[ atomic ratio ] or the vicinity thereof, and In provided on the first metal oxide layer: m: zn=1: 1:1[ atomic ratio ] or a vicinity thereof. In addition, gallium or aluminum is particularly preferably used as the element M.

For example, a stacked structure or the like of any one selected from indium oxide, indium gallium oxide, and IGZO, and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

Examples of the oxide semiconductor having crystallinity include CAAC (c-axis-aligned crystalline) -OS and nc (nanocrystalline) -OS.

Alternatively, a transistor (Si transistor) using silicon for a channel formation region may be used. The silicon may be monocrystalline silicon, polycrystalline silicon, amorphous silicon, or the like. In particular, a transistor (also referred to as an LTPS transistor) including low-temperature polysilicon (LTPS: low Temperature Poly Silicon) in a semiconductor layer can be used. LTPS transistors have high field effect mobility and good frequency characteristics.

By using Si transistors such as LTPS transistors, a circuit (e.g., a data driver circuit) and a display portion which need to be driven at a high frequency can be formed over the same substrate. Therefore, an external circuit mounted to the display device can be simplified, and the component cost and the mounting cost can be reduced.

The field effect mobility of an OS transistor is much higher than that of a transistor using amorphous silicon. In addition, the drain-source leakage current (also referred to as off-state current) of the OS transistor in the off state is extremely low, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. Further, by using the OS transistor, power consumption of the display device can be reduced.

Further, in order to increase the light emission luminance of the light emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light emitting device. For this reason, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Since the withstand voltage between the source and drain of the OS transistor is higher than that of the Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Thus, by using an OS transistor as a driving transistor included in the pixel circuit, the amount of current flowing through the light emitting device can be increased, and the light emitting luminance of the light emitting device can be improved.

Further, when the transistor is driven in the saturation region, the OS transistor can make a change in the source-drain current with a change in the gate-source voltage small as compared with the Si transistor. Therefore, by using an OS transistor as a driving transistor included in the pixel circuit, the current flowing between the source and the drain can be determined in detail by controlling the gate-source voltage. The amount of current flowing through the light emitting device can be controlled. Thereby, the number of gray levels represented by the pixel circuit can be increased.

Further, regarding the saturation characteristics of the current flowing when the transistor is driven in the saturation region, the OS transistor can flow a stable current (saturation current) even if the source-drain voltage is gradually increased as compared with the Si transistor. Therefore, by using the OS transistor as a driving transistor, even if, for example, current-voltage characteristics of the light emitting device are uneven, a stable current can flow through the light emitting device. That is, even if the source-drain voltage is increased when the OS transistor is driven in the saturation region, the source-drain current is hardly changed. Therefore, the light emission luminance of the light emitting device can be stabilized.

As described above, by using an OS transistor as a driving transistor included in a pixel circuit, suppression of black impurity, increase in emission luminance, multi-gradation, suppression of non-uniformity of a light emitting device, and the like can be achieved.

The transistor included in the circuit 164 and the transistor included in the display portion 107 may have the same structure or may have different structures. The plurality of transistors included in the circuit 164 may have the same structure or may have two or more different structures. Similarly, the plurality of transistors included in the display portion 107 may have the same structure or two or more different structures.

All the transistors included in the display portion 107 may be OS transistors or Si transistors. Further, some of the transistors included in the display portion 107 may be OS transistors, and the remaining transistors may be Si transistors.

For example, by using both LTPS transistors and OS transistors in the display portion 107, a display device having low power consumption and high driving capability can be realized. In addition, the structure of the combination LTPS transistor and OS transistor is sometimes referred to as LTPO. Further, for example, it is preferable to use an OS transistor for a transistor used as a switch for controlling conduction/non-conduction of a wiring and an LTPS transistor for a transistor for controlling current.

For example, one of the transistors included in the display portion 107 is used as a transistor for controlling a current flowing through the light emitting device, and may be referred to as a driving transistor. One of a source and a drain of the driving transistor is electrically connected to a pixel electrode of the light emitting device. LTPS transistors are preferably used as the driving transistors. Accordingly, the current flowing through the light emitting device can be increased.

On the other hand, one of the other transistors included in the display portion 107 is used as a switch for controlling selection and non-selection of a pixel, and may be referred to as a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and the drain is electrically connected to the signal line. The selection transistor is preferably an OS transistor. Accordingly, the gradation level of the pixel can be maintained even if the frame rate is made significantly small (for example, 1fps or less), whereby by stopping the driver when displaying a still image, power consumption can be reduced.

Thus, the display device according to one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

A display device according to one embodiment of the present invention has a structure including an OS transistor and a light emitting device having an MML structure. By adopting this structure, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light emitting devices can be made extremely low. Further, by adopting the above-described structure, the viewer can observe any one or more of the sharpness of the image, the high color saturation, and the high contrast when the image is displayed on the display device. Further, by adopting a structure in which the leakage current that can flow through the transistor and the lateral leakage current between the light-emitting devices are extremely low, for example, display in which light leakage (so-called black impurity) that can occur when black is displayed is extremely small can be performed.

In particular, the light emitting device of the MML structure can make the current flowing between adjacent light emitting devices extremely low.

[ transistor 209, transistor 210]

Fig. 15B and 15C are cross-sectional views illustrating another example of a cross-sectional structure of a transistor that can be used for the display device 100H.

The transistor 209 and the transistor 210 include a conductive layer 221, an insulating layer 211, a semiconductor layer 231, a conductive layer 222a, a conductive layer 222b, an insulating layer 225, a conductive layer 223, and an insulating layer 215. The semiconductor layer 231 has a channel formation region 231i and a pair of low-resistance regions 231n. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231 i. The conductive layer 221 is used as a gate electrode, and the insulating layer 211 is used as a first gate insulating layer. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231 i. The conductive layer 223 is used as a gate electrode and the insulating layer 225 is used as a second gate insulating layer. The conductive layer 222a is electrically connected to one of the pair of low-resistance regions 231n, and the conductive layer 222b is electrically connected to the other of the pair of low-resistance regions 231n. The insulating layer 215 covers the conductive layer 223. The insulating layer 218 also covers the transistor.

[ structural example 1 of insulating layer 225 ]

In the transistor 209, the insulating layer 225 covers the top surface and the side surface of the semiconductor layer 231 (see fig. 15B). The insulating layer 225 and the insulating layer 215 have openings, and the conductive layer 222a and the conductive layer 222b are electrically connected to the low-resistance region 231n in the openings. In addition, one of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[ structural example 2 of insulating layer 225 ]

In the transistor 210, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low-resistance region 231n (see fig. 15C). For example, the insulating layer 225 may be processed into a prescribed shape using the conductive layer 223 as a mask. The insulating layer 215 covers the insulating layer 225 and the conductive layer 223. The insulating layer 215 has an opening, and the conductive layer 222a and the conductive layer 222b are electrically connected to the low-resistance region 231 n.

[ connection portion 204]

The connection portion 204 is provided on the substrate 14 b. The connection portion 204 includes a conductive layer 166, and the conductive layer 166 is electrically connected to the wiring 165. The connection portion 204 does not overlap the substrate 16b, and the conductive layer 166 is exposed. A conductive film may be processed to form conductive layer 166 and conductive layer 171. Further, the conductive layer 166 is electrically connected to the FPC177 through the connection layer 242. For example, an anisotropic conductive film (ACF: anisotropic Conductive Film), an anisotropic conductive paste (ACP: anisotropic Conductive Paste), or the like can be used as the connection layer 242.

Display device 100I-

Fig. 16 is a sectional view illustrating the structure of the display device 100I. The display device 100I is different from the display device 100H in flexibility. In other words, the display device 100I is a flexible display. Display device 100I includes substrate 17 instead of substrate 14b and includes substrate 18 instead of substrate 16b. Both the substrate 17 and the substrate 18 have flexibility.

The display device 100I includes an adhesive layer 156 and an insulating layer 162. Adhesive layer 156 bonds insulating layer 162 to substrate 17. For example, a material that can be used for the adhesive layer 122 can be applied to the adhesive layer 156. Further, for example, a material which can be used for the insulating layer 211, the insulating layer 213, or the insulating layer 215 can be used for the insulating layer 162. The transistor 201 and the transistor 205 are disposed on the insulating layer 162.

For example, the insulating layer 162 is formed over a manufacturing substrate, and each transistor, a light-emitting device, and the like are formed over the insulating layer 162. Next, for example, an adhesive layer 142 is formed over the light-emitting device, and the manufacturing substrate and the substrate 18 are bonded together using the adhesive layer 142. Next, the manufacturing substrate is separated from the insulating layer 162, and the surface of the insulating layer 162 is exposed. Then, an adhesive layer 156 is formed on the surface of the exposed insulating layer 162, and the insulating layer 162 is bonded to the substrate 17 using the adhesive layer 156. Thus, each component formed on the manufacturing substrate can be transferred onto the substrate 17 to manufacture the display device 100I.

Display device 100J-

Fig. 17 is a sectional view illustrating the structure of the display device 100J. The display device 100J is different from the display device 100H in that: in the display apparatus 100J, a light emitting device 63W is included instead of the light emitting device 63R, the light emitting device 63G, and the light emitting device 63B; and display device 100J includes coloring layer 183R, coloring layer 183G, and coloring layer 183B.

The display device 100J includes a coloring layer 183R, a coloring layer 183G, and a coloring layer 183B between the substrate 16B and the substrate 14B. The colored layer 183R overlaps one light emitting device 63W, the colored layer 183G overlaps the other light emitting device 63W, and the colored layer 183B overlaps the other light emitting device 63W.

The display device 100J includes a light shielding layer 117. For example, the light shielding layer 117 is provided between the colored layer 183R and the colored layer 183G, between the colored layer 183G and the colored layer 183B, and between the colored layer 183B and the colored layer 183R. The light shielding layer 117 includes a region overlapping the connection portion 140 and a region overlapping the circuit 164.

The light emitting device 63W may emit white light, for example. Further, for example, the coloring layer 183R may transmit red light, the coloring layer 183G may transmit green light, and the coloring layer 183B may transmit blue light. In this way, the display device 100J can perform full-color display by emitting, for example, the red light 83R, the green light 83G, and the blue light 83B.

Display device 100K-

Fig. 18 is a sectional view illustrating the structure of the display device 100K. The display device 100K is different from the display device 100H in that: the display device 100K is a bottom emission display device. The light emitting device emits light 83R, light 83G, and light 83B to the substrate 14B side. A material that transmits visible light is used for the conductive layer 171. In addition, a material that reflects visible light is used for the conductive layer 173.

Display device 100L >

Fig. 19 is a sectional view illustrating the structure of the display device 100L. The display device 100L is different from the display device 100H in that: the display device 100L has flexibility and is a bottom emission type display device. Display device 100L includes substrate 17 instead of substrate 14b and includes substrate 18 instead of substrate 16b. Both the substrate 17 and the substrate 18 have flexibility. The light emitting device emits light 83R, light 83G, and light 83B to the substrate 17 side.

Further, the conductive layer 221 and the conductive layer 223 can have both light transmittance and reflectivity to visible light. When the conductive layers 221 and 223 have transparency to visible light, the visible light transmittance of the display portion 107 can be improved. On the other hand, when the conductive layer 221 and the conductive layer 223 have reflectivity for visible light, the visible light incident on the semiconductor layer 231 can be reduced. In addition, damage to the semiconductor layer 231 can be reduced. Thereby, the reliability of the display device 100K or the display device 100L can be improved.

Note that even with the top emission type display device such as the display device 100H or the display device 100I, at least a part of the layer constituting the transistor 205 can be made transparent to visible light. At this time, the conductive layer 171 also has transparency to visible light. As described above, the visible light transmittance of the display portion 107 can be improved.

Display device 100M-

Fig. 20 is a sectional view illustrating the structure of the display device 100M. The display device 100M is different from the display device 100H in that: in the display apparatus 100M, a light emitting device 63W is included instead of the light emitting device 63R, the light emitting device 63G, and the light emitting device 63B; and display device 100M includes coloring layer 183R, coloring layer 183G, and coloring layer 183B.

The display device 100M includes a coloring layer 183R, a coloring layer 183G, and a coloring layer 183B. Further, the display device 100M includes a light shielding layer 117.

[ colored layer 183R, colored layer 183G, and colored layer 183B ]

The coloring layer 183R is located between one light emitting device 63W and the substrate 14b, the coloring layer 183G is located between the other light emitting device 63W and the substrate 14b, and the coloring layer 183G is located between the other light emitting device 63W and the substrate 14 b. For example, the colored layer 183R, the colored layer 183G, and the colored layer 183B may be provided between the insulating layer 215 and the insulating layer 214.

[ light-shielding layer 117]

The light shielding layer 117 is provided over the substrate 14b, and the light shielding layer 117 is located between the substrate 14b and the transistor 205. Further, the insulating layer 153 is located between the light shielding layer 117 and the transistor 205. For example, the light shielding layer 117 does not overlap with the light emitting region of the light emitting device 63W. For example, the light shielding layer 117 overlaps the connection portion 140 and the circuit 164.

The light shielding layer 117 may be provided in the display device 100K or the display device 100L. In this case, light emitted from the light emitting devices 63R, 63G, and 63B can be suppressed from being reflected by the substrate 14B and diffused inside the display device 100K or the display device 100L, for example. Thus, the display devices 100K and 100L can be display devices with high display quality. On the other hand, by not providing the light shielding layer 117, light extraction efficiency of light emitted from the light emitting devices 63R, 63G, and 63B can be improved.

Embodiment 10

In this embodiment, an electronic device according to an embodiment of the present invention will be described.

The electronic device according to the present embodiment includes the display device according to one embodiment of the present invention in the display portion. The display device according to one embodiment of the present invention has high reliability, and is easy to achieve high definition and high resolution. Therefore, the display device can be used for display portions of various electronic devices.

Examples of the electronic device include electronic devices having a large screen such as a television set, a desktop or notebook personal computer, a display for a computer, a large-sized game machine such as a digital signage and a pachinko machine, and digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, and audio reproducing devices.

In particular, since the display device according to one embodiment of the present invention can improve the definition, the display device can be suitably used for an electronic apparatus including a small display portion. Examples of such electronic devices include wristwatch-type and bracelet-type information terminal devices (wearable devices), wearable devices that can be worn on the head, VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.

The display device according to one embodiment of the present invention preferably has extremely high resolution such as HD (1280×720 in pixel number), FHD (1920×1080 in pixel number), WQHD (2560×1440 in pixel number), WQXGA (2560×1600 in pixel number), 4K (3840×2160 in pixel number), 8K (7680×4320 in pixel number), or the like. In particular, the resolution is preferably set to 4K, 8K or more. The pixel density (sharpness) of the display device according to one embodiment of the present invention is preferably 100ppi or more, more preferably 300ppi or more, still more preferably 500ppi or more, still more preferably 1000ppi or more, still more preferably 2000ppi or more, still more preferably 3000ppi or more, still more preferably 5000ppi or more, and still more preferably 7000ppi or more. By using the display device having one or both of high resolution and high definition, the sense of realism, sense of depth, and the like can be further improved in an electronic device for personal use such as a portable device or a home device. The screen ratio (aspect ratio) of the display device according to one embodiment of the present invention is not particularly limited. For example, the display device may adapt to 1:1 (square), 4: 3. 16:9 and 16:10, etc.

The electronic device of the present embodiment may also include a sensor (the sensor has a function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, electric current, voltage, electric power, radiation, flow rate, humidity, inclination, vibration, smell, or infrared ray).

The electronic device of the present embodiment may have various functions. For example, it may have the following functions: a function of displaying various information (still image, moving image, character image, etc.) on the display section; a function of the touch panel; a function of displaying a calendar, date, time, or the like; executing functions of various software (programs); a function of performing wireless communication; or a function of reading out a program or data stored in the storage medium; etc.

An example of a wearable device that can be worn on the head is described using fig. 21A to 21D. These wearable devices have at least one of a function of displaying AR content, a function of displaying VR content, a function of displaying SR content, and a function of displaying MR content. When the electronic device has a function of displaying at least one of AR, VR, SR, MR, and the like, the user's sense of immersion can be improved.

The electronic apparatus 6700A shown in fig. 21A and the electronic apparatus 6700B shown in fig. 21B each include a pair of display panels 6751, a pair of housings 6751, a communication unit (not shown), a pair of mounting units 6723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 6753, a spectacle frame 6757, and a pair of nose pads 6758.

The display panel 6751 can be applied to a display device according to one embodiment of the present invention. Thus, an electronic device with high reliability can be realized.

The electronic device 6700A and the electronic device 6700B can both project an image displayed by the display panel 6751 on the display area 6756 in the optical member 6753. Since the optical member 6753 has light transmittance, the user can see an image displayed in the display area overlapping with the transmitted image seen through the optical member 6753. Therefore, the electronic device 6700A and the electronic device 6700B are both electronic devices capable of AR display.

As an imaging unit, a camera capable of capturing a front image may be provided to the electronic device 6700A and the electronic device 6700B. Further, by providing the electronic device 6700A and the electronic device 6700B with acceleration sensors such as gyro sensors, it is possible to detect the head orientation of the user and display an image corresponding to the orientation on the display area 6756.

The communication unit has a wireless communication device, and can supply video signals through the wireless communication device. Further, a connector capable of connecting a cable for supplying a video signal and a power supply potential may be included instead of or in addition to the wireless communication device.

The electronic devices 6700A and 6700B are provided with batteries, and can be charged by one or both of wireless and wired systems.

The housing 6721 may be provided with a touch sensor module. The touch sensor module has a function of detecting whether or not the outer surface of the housing 6721 is touched. By the touch sensor module, it is possible to detect a click operation, a slide operation, or the like by the user and execute various processes. For example, processing such as temporary stop and playback of a moving image can be performed by a click operation, and processing such as fast forward and fast backward can be performed by a slide operation. Further, by providing a touch sensor module in each of the two housings 6721, the operation range can be enlarged.

As the touch sensor module, various touch sensors can be used. For example, various methods such as a capacitance method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be used. In particular, a capacitive or optical sensor is preferably applied to the touch sensor module.

In the case of using an optical touch sensor, a photoelectric conversion element (also referred to as a photoelectric conversion device) can be used as the light receiving element. One or both of an inorganic semiconductor and an organic semiconductor may be used for the active layer of the photoelectric conversion element.

The electronic apparatus 6800A shown in fig. 21C and the electronic apparatus 6800B shown in fig. 21D each include a pair of display portions 6820, a housing 6821, a communication portion 6822, a pair of mounting portions 6823, a control portion 6824, a pair of imaging portions 6825, and a pair of lenses 6832.

The display portion 6820 can be applied to a display device according to one embodiment of the present invention. Thus, an electronic device with high reliability can be realized.

The display portion 6820 is provided in a position inside the housing 6821 visible through the lens 6832. Further, by displaying a different image on each of the pair of display portions 6820, three-dimensional display using parallax can be performed.

The electronic device 6800A and the electronic device 6800B may both be referred to as VR-oriented electronic devices. A user who mounts the electronic device 6800A or the electronic device 6800B can see an image displayed on the display portion 6820 through the lens 6832.

The electronic device 6800A and the electronic device 6800B preferably have a mechanism in which the left and right positions of the lens 6832 and the display portion 6820 can be adjusted so that the lens 6832 and the display portion 6820 are positioned at the most appropriate positions according to the positions of eyes of the user. Further, it is preferable to have a mechanism in which the focus is adjusted by changing the distance between the lens 6832 and the display portion 6820.

The user can mount the electronic apparatus 6800A or the electronic apparatus 6800B on the head using the mount portion 6823. For example, in fig. 21C, the mounting portion 6823 has a shape like a temple of an eyeglass (also referred to as a hinge, temple wire, or the like), but is not limited thereto. The mounting portion 6823 may have, for example, a helmet-type or belt-type shape as long as it can be attached by a user.

The imaging unit 6825 has a function of acquiring external information. The data acquired by the imaging unit 6825 may be output to the display unit 6820. An image sensor may be used in the imaging portion 6825. In addition, a plurality of cameras may be provided so as to be able to correspond to various angles of view such as a telephoto angle and a wide angle.

Note that an example including the imaging unit 6825 is shown here, and a distance measuring sensor (also referred to as a detection unit) capable of measuring a distance to an object may be provided. In other words, the imaging portion 6825 is one mode of a detection portion. As the detection unit, for example, an image sensor or a light detection and ranging (LIDAR: light Detection and Ranging) equidistant image sensor can be used. By using the image acquired by the camera and the image acquired by the range image sensor, more information can be acquired, and a posture operation with higher accuracy can be realized.

The electronic device 6800A can also include a vibrating mechanism that functions as a bone conduction headset. For example, a structure including the vibration mechanism may be employed as any one or more of the display portion 6820, the frame 6821, and the mounting portion 6823. Accordingly, it is not necessary to provide an acoustic device such as a headphone, an earphone, or a speaker, and only the electronic device 6800A can be attached to enjoy video and audio.

The electronic device 6800A and the electronic device 6800B may each include an input terminal. For example, a cable that supplies a video signal from a video output device or the like, power for charging a battery provided in an electronic device, or the like may be connected to the input terminal.

The electronic device according to one embodiment of the present invention may have a function of wirelessly communicating with the earphone 6750. The earphone 6750 includes a communication section (not shown), and has a wireless communication function. The headset 6750 may receive information (e.g., voice data) from an electronic device through wireless communication functions. For example, the electronic device 6700A shown in fig. 21A has a function of transmitting information to the earphone 6750 through a wireless communication function. Further, the electronic device 6800A shown in fig. 21C, for example, has a function of transmitting information to the earphone 6750 through a wireless communication function.

In addition, the electronic device may also include an earphone portion. The electronic device 6700B shown in fig. 21B includes an earphone portion 6727. For example, a structure may be employed in which the earphone part 6727 and the control part are connected in a wired manner. A part of the wiring connecting the earphone part 6727 and the control part may be disposed inside the housing 6721 or the mounting part 6723.

Also, the electronic device 6800B shown in fig. 21D includes an earphone portion 6827. For example, a structure may be employed in which the earphone portion 6827 and the control portion 6824 are connected in a wired manner. A part of the wiring connecting the earphone unit 6827 and the control unit 6824 may be disposed inside the housing 6821 or the mounting unit 6823. In addition, the earphone portion 6827 and the mounting portion 6823 may also include magnets. Accordingly, the earphone portion 6827 can be fixed to the mounting portion 6823 by magnetic force, and storage is easy, which is preferable.

The electronic device may also include a sound output terminal that can be connected to an earphone, a headphone, or the like. The electronic device may include one or both of the sound input terminal and the sound input means. As the sound input means, for example, a sound receiving device such as a microphone can be used. By providing the sound input mechanism to the electronic apparatus, the electronic apparatus can be provided with a function called a headset.

As described above, both of the glasses type (electronic apparatus 6700A, electronic apparatus 6700B, and the like) and the goggle type (electronic apparatus 6800A, electronic apparatus 6800B, and the like) are preferable as the electronic apparatus according to the embodiment of the present invention.

Furthermore, the electronic device of one aspect of the present invention may send information to the headset in a wired or wireless manner.

The electronic device 6500 shown in fig. 22A is a portable information terminal device that can be used as a smartphone.

The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

The display portion 6502 can use a display device according to one embodiment of the present invention. Thus, an electronic device with high reliability can be realized.

Fig. 22B is a schematic cross-sectional view of an end portion on the microphone 6506 side including the housing 6501.

A light-transmissive protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, and the like are provided in a space surrounded by the housing 6501 and the protective member 6510.

The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 using an adhesive layer (not shown).

In an area outside the display portion 6502, a part of the display panel 6511 is overlapped, and the overlapped area is connected with an FPC6515. The FPC6515 is mounted with an IC6516. The FPC6515 is connected to terminals provided on the printed circuit board 6517.

The display panel 6511 may use a flexible display of one embodiment of the present invention. Thus, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, the large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic apparatus. Further, by folding a part of the display panel 6511 to provide a connection portion with the FPC6515 on the back surface of the pixel portion, a narrow-frame electronic device can be realized.

Fig. 22C shows an example of a television apparatus. In the television device 7100, a display unit 7000 is incorporated in a housing 7101. Here, a structure in which the housing 7101 is supported by a bracket 7103 is shown.

The display unit 7000 may be a display device according to an embodiment of the present invention. Thus, an electronic device with high reliability can be realized.

The television device 7100 shown in fig. 22C can be operated by using an operation switch provided in the housing 7101 and a remote control operation unit 7111 provided separately. Alternatively, the display 7000 may be provided with a touch sensor, or the television device 7100 may be operated by touching the display 7000 with a finger or the like. The remote controller 7111 may have a display unit for displaying data outputted from the remote controller 7111. By using the operation keys or touch panel of the remote control unit 7111, the channel and volume can be operated, and the video displayed on the display 7000 can be operated.

The television device 7100 includes a receiver, a modem, and the like. A general television broadcast may be received by using a receiver. Further, the communication network is connected to a wired or wireless communication network via a modem, and information communication is performed in one direction (from a sender to a receiver) or in two directions (between a sender and a receiver, between receivers, or the like).

Fig. 22D shows an example of a notebook personal computer. The notebook personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The display portion 7000 is incorporated in the housing 7211.

Fig. 22E and 22F show one example of a digital signage.

The digital signage 7300 shown in fig. 22E includes a housing 7301, a display portion 7000, a speaker 7303, and the like. In addition, an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like may be included.

Fig. 22F shows a digital signage 7400 disposed on a cylindrical post 7401. The digital signage 7400 includes a display 7000 disposed along a curved surface of the post 7401.

In fig. 22E and 22F, a display device according to an embodiment of the present invention can be used for the display unit 7000. Thus, an electronic device with high reliability can be realized.

The larger the display unit 7000 is, the larger the amount of information that can be provided at a time is. The larger the display unit 7000 is, the more attractive the user can be, for example, to improve the advertising effect.

By using the touch panel for the display unit 7000, not only a still image or a moving image can be displayed on the display unit 7000, but also a user can intuitively operate the touch panel, which is preferable. In addition, in the application for providing information such as route information and traffic information, usability can be improved by intuitive operation.

As shown in fig. 22E and 22F, the digital signage 7300 or 7400 can preferably be linked to an information terminal device 7311 or 7411 such as a smart phone carried by a user by wireless communication. For example, the advertisement information displayed on the display portion 7000 may be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. Further, by operating the information terminal device 7311 or the information terminal device 7411, the display of the display portion 7000 can be switched.

Further, a game may be executed on the digital signage 7300 or the digital signage 7400 with the screen of the information terminal apparatus 7311 or the information terminal apparatus 7411 as an operation unit (controller). Thus, a plurality of users can participate in the game at the same time without specifying the users, and enjoy the game.

The electronic apparatus shown in fig. 23A to 23G includes a housing 9000, a display portion 9001, a speaker 9003, an operation key 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (the sensor has a function of measuring a force, a displacement, a position, a speed, an acceleration, an angular velocity, a rotation speed, a distance, light, liquid, magnetism, temperature, a chemical substance, sound, time, hardness, an electric field, electric current, voltage, electric power, radiation, flow, humidity, inclination, vibration, smell, or infrared) and a microphone 9008, or the like.

The electronic devices shown in fig. 23A to 23G have various functions. For example, it may have the following functions: a function of displaying various information (still image, moving image, character image, etc.) on the display section; a function of the touch panel; a function of displaying a calendar, date, time, or the like; functions of controlling processing by using various software (programs); a function of performing wireless communication; or a function of reading out and processing the program or data stored in the storage medium; etc. Note that the functions of the electronic apparatus are not limited to the above functions, but may have various functions. The electronic device may also include a plurality of display portions. In addition, a camera or the like may be provided in the electronic device so as to have the following functions: a function of capturing a still image or a moving image, and storing the captured image in a storage medium (an external storage medium or a storage medium built in a camera); and a function of displaying the photographed image on a display section; etc.

Next, the electronic apparatus shown in fig. 23A to 23G will be described in detail.

Fig. 23A is a perspective view showing the portable information terminal 9101. The portable information terminal 9101 can be used as a smart phone, for example. Note that in the portable information terminal 9101, a speaker 9003, a connection terminal 9006, a sensor 9007, and the like may be provided. Further, as the portable information terminal 9101, text or image information may be displayed on a plurality of surfaces thereof. An example of displaying three icons 9050 is shown in fig. 23A. Further, information 9051 shown in a rectangle of a broken line may be displayed on the other face of the display portion 9001. As an example of the information 9051, there is information indicating that an email, SNS, a telephone, or the like is received; a title of an email, SNS, or the like; sender name of email or SNS; a date; time; a battery balance; and radio wave intensity. Alternatively, for example, the icon 9050 may be displayed at a position where the information 9051 is displayed.

Fig. 23B is a perspective view showing the portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display portion 9001. Here, examples are shown in which the information 9052, the information 9053, and the information 9054 are displayed on different surfaces. For example, in a state where the portable information terminal 9102 is placed in a coat pocket, the user can confirm the information 9053 displayed at a position seen from above the portable information terminal 9102. For example, the user can confirm the display without taking out the portable information terminal 9102 from the pocket, thereby, for example, judging whether to answer a call.

Fig. 23C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 may execute various applications such as reading and editing of mobile phones, emails and articles, playing music, network communications and computer games. The tablet terminal 9103 includes a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front face of the housing 9000, operation keys 9005 serving as operation buttons on the left side face of the housing 9000, and connection terminals 9006 on the bottom face.

Fig. 23D is a perspective view showing the wristwatch-type portable information terminal 9200. The portable information terminal 9200 can be used as a smart watch (registered trademark), for example. The display surface of the display portion 9001 is curved, and can display along the curved display surface. Further, the portable information terminal 9200 can perform handsfree communication by, for example, communicating with a headset capable of wireless communication. Further, by using the connection terminal 9006, the portable information terminal 9200 can perform data transmission or charging with other information terminals. Charging may also be performed by wireless power.

Fig. 23E to 23G are perspective views showing the portable information terminal 9201 that can be folded. Fig. 23E is a perspective view showing a state in which the portable information terminal 9201 is unfolded, fig. 23G is a perspective view showing a state in which it is folded, and fig. 23F is a perspective view showing a state in the middle of transition from one of the state in fig. 23E and the state in fig. 23G to the other. The portable information terminal 9201 has good portability in a folded state and has a large display area with seamless splicing in an unfolded state, so that the display has a strong browsability. The display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. The display portion 9001 can be curved in a range of, for example, 0.1mm to 150mm in radius of curvature.

This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, in the case where a plurality of structural examples are shown in one embodiment, the structural examples may be appropriately combined.

Example 1

In this embodiment, the light emitting devices 1 to 3 that can be used for the display apparatus of one embodiment of the present invention are described with reference to fig. 24 to 29D.

Fig. 24 is a diagram illustrating the structure of the light emitting device 550X.

Fig. 25 is a diagram illustrating current density-luminance characteristics of the light emitting devices 1 to 3 and the comparison device 1.

Fig. 26 is a diagram illustrating voltage-luminance characteristics of the light emitting devices 1 to 3 and the comparison device 1.

Fig. 27 is a diagram illustrating voltage-current characteristics of the light emitting devices 1 to 3 and the comparison device 1.

Fig. 28 is a diagram illustrating the operation of the light emitting devices 1 toThe light emitting device 3 and the comparison device 1 were 1000cd/m ² Is a graph of an emission spectrum when the luminance of the light is emitted.

Fig. 29A to 29D are views explaining making the light emitting devices 1 to 3 and the comparison device 1 at 2.5mA/cm ² An optical micrograph of the light-emitting state at the time of current density light emission.

< light-emitting device 1>

The light emitting device 1 manufactured described in this embodiment has the same structure as the light emitting device 550X (see fig. 24).

Structure of light-emitting device 1

Table 1 shows the structure of the light emitting device 1. The structural formula of the material used for the light emitting device described in this embodiment is also shown below. Note that, for convenience, the subscript text and the superscript text in the table of the present embodiment become normal text. For example, both the subscript text in the abbreviation and the superscript text in the unit become normal text in the table. These descriptions in the tables can be converted into original descriptions by referring to the descriptions in the specification.

TABLE 1

[ chemical formula 3]

Method for manufacturing light-emitting device 1

The light emitting device 1 described in this embodiment is manufactured by using a method including the following steps.

[ step 1]

In step 1, a reflective film REF1 is formed. Specifically, the reflective film REF1 is formed by a sputtering method using titanium (Ti) as a target. Further, the reflection film REF1 contains Ti, and has a thickness of 50nm.

[ step 2 ]

In step 2, a reflective film REF2 is formed on the reflective film REF1. Specifically, the reflective film REF2 is formed by a sputtering method using aluminum (Al) as a target. Further, the reflection film REF2 contains Al, and has a thickness of 70nm.

[ step 3]

In step 3, a reflective film REF3 is formed on the reflective film REF2. Specifically, the reflective film REF3 is formed by a sputtering method using Ti as a target. Further, the reflection film REF3 contains Ti, and has a thickness of 6nm.

[ Steps 4-1 ]

In step 4-1, an electrode 551X is formed on the reflective film REF 3. Specifically, the electrode 551X is formed by a sputtering method using indium oxide-tin oxide (abbreviated as ITSO) containing silicon or silicon oxide as a target. In addition, electrode 551X contains ITSO, has a thickness of 10nm, and has an area of 4mm ² (2mm×2mm)。

[ Steps 4-2 ]

In step 4-2, the workpiece on which the electrode is formed is washed with water. Then, the workpiece is put into the interior thereof and depressurized to 10 ^-4 In a vacuum vapor deposition apparatus of the order Pa, vacuum baking was performed at 170℃for 60 minutes in a heating chamber in the vacuum vapor deposition apparatus. Then, the mixture was cooled for about 30 minutes.

[ step 5 ]

In step 5, layer 104X is formed over electrode 551X. Specifically, a material is co-evaporated by a resistance heating method. Layer 104X comprises N- (biphenyl-4-yl) -N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -9, 9-dimethyl-9H-fluoren-2-amine (abbreviated as pcbbef) and an electron accepting material (OCHD-003), wherein pcbbef: OCHD-003=1: 0.03 (weight ratio), and the thickness was 10nm. In addition, OCHD-003 contains fluorine and has a molecular weight of 672.

[ step 6 ]

In step 6, layer 112X is formed over layer 104X. Specifically, a material is deposited by a resistance heating method. Layer 112X comprises PCBBiF and has a thickness of 10nm.

[ step 7 ]

In step 7, layer 111X is formed on layer 112X. Specifically, a material is co-evaporated by a resistance heating method. Layer 111X comprises 8- (1, 1':4', 1' -three)Biphenyl-3-yl) -4- [3- (dibenzothiophen-4-yl) phenyl]-[1]Benzofuro [3,2-d]Pyrimidine (abbreviated as 8mpTP-4 mDBtPBfpm), 9- (2-naphthyl) -9' -phenyl-9H, 9' H-3,3' -dicarbazole (abbreviated as beta NCCP) and [2-d ] ₃ -methyl-8- (2-pyridinyl- κN) benzofuro [2,3-b]Pyridine-kappa C]Bis [2- (5-d 3-methyl-2-pyridinyl- κN) ² ) Phenyl-kappa C]Iridium (III) (abbreviated as Ir (5 mppy-d) ₃ ) ₂ (mbfpypy-d ₃ ) 8mpTP-4 mDBtPBfpm): beta NCCP: ir (5 mppy-d) ₃ ) ₂ (mbfpypy-d ₃ ) =0.6: 0.4:0.1 (weight ratio), and the thickness was 40nm.

[ step 8 ]

In step 8, layer 113X1 is formed on layer 111X. Specifically, a material is deposited by a resistance heating method. Further, layer 113X1 contains 2- {3- [3- (N-phenyl-9H-carbazol-3-yl) -9H-carbazol-9-yl ] phenyl } dibenzo [ f, H ] quinoxaline (abbreviated as 2 mPCzPDBq) and has a thickness of 10nm.

[ step 9 ]

In step 9, layer 113X2 is formed on layer 113X1. Specifically, a material is deposited by a resistance heating method. Further, the layer 113X2 contains 2,2' - (1, 3-phenylene) bis (9-phenyl-1, 10-phenanthroline) (abbreviated as mPPHen 2P) and has a thickness of 15nm.

[ step 10 ]

In step 10, layer 105X is formed over layer 113X 2. Specifically, a material is co-evaporated by a resistance heating method. In addition, layer 105X comprises lithium fluoride (LiF) and ytterbium (Yb), wherein LiF: yb=1: 0.5 (volume ratio), and the thickness was 1.5nm.

[ step 11 ]

In step 11, an electrode 552X is formed on the layer 105X. Specifically, a material is co-evaporated by a resistance heating method. Further, the electrode 552X includes silver (Ag) and magnesium (Mg), wherein Ag: mg=1: 0.1 (volume ratio), and the thickness was 25nm.

[ step 12 ]

In step 12, a layer CAP is formed on the electrode 552X. Specifically, the layer CAP is formed by a sputtering method using indium oxide-tin oxide (abbreviated as ITO) as a target. In addition, the layer CAP contains ITO and has a thickness of 70nm.

Operating characteristics of light-emitting device 1

The light emitting device 1 emits light EL1 by being supplied with power (see fig. 24). The operating characteristics of the light emitting device 1 were measured at room temperature (refer to fig. 25 to 28). Note that the luminance, CIE chromaticity, and emission spectrum were measured using a spectroradiometer (SR-UL 1R manufactured by the topukang corporation).

Table 2 shows that the light-emitting device fabricated was made to have a luminance of 1000cd/m ² The main initial characteristics when emitting light from left to right. Further, table 2 also shows characteristics of other light emitting devices described later.

TABLE 2

As can be seen from this, the light emitting device 1 has good characteristics. For example, regarding the voltage-luminance characteristics, the light emitting device 1 can obtain the same luminance at a lower voltage than the comparison device 1 described later (refer to fig. 26). The structure of the comparison device 1 described later is the same as that of the light-emitting device 1, but the manufacturing method of the comparison device 1 described later is different from that of the light-emitting device 1. Specifically, in step 4-2 of the manufacturing method of the comparative device 1, the electrode 551X of the comparative device 1 is exposed to the etching gas for the dry etching method, and its properties are changed. Further, the light emitting state of the light emitting device 1 is uniform as compared with the comparison device 1 described later (refer to fig. 29A).

< light-emitting device 2>

The light emitting device 2 manufactured described in this embodiment has the same structure as the light emitting device 550X (see fig. 24). The light emitting device 2 is different from the light emitting device 1 in the structure of the layer 104X. Specifically, in the light emitting device 2, the layer 104X is formed of PCBBiF: OCHD-003=1: 0.10 The (weight ratio) contains PCBIF and OCHD-003, and the manufacturing method thereof is different from that of the light-emitting device 1. The differences will be described in detail, and the above description is applied to portions using the same structure and method.

Method for manufacturing light-emitting device 2

The light emitting device 2 described in this embodiment is manufactured by using a method including the following steps.

In addition, the manufacturing method of the light emitting device 2 is different from the manufacturing method of the light emitting device 1 in steps 4-2 and 9. The differences will be described in detail, and the above description is applied to portions using the same method.

[ Steps 4-2 ]

In the 4-2 th step, a process of vaporizing 1, 3-hexamethyldisilazane (abbreviated as HMDS) and spraying it onto a workpiece heated to 60℃for 120 seconds was performed.

Next, in the apparatus depressurized to 5.0Pa, oxygen was supplied at a flow rate of 48 seem, O2 plasma treatment was performed at an energy of 600W for 3 seconds, and then, after the pressure was adjusted to 1.0Pa, oxygen was supplied at a flow rate of 48 seem, O2 plasma treatment was performed at an energy of 600W for 10 seconds. This step corresponds to step 5 in the method for manufacturing a display device described in embodiment 1. Thereby, the electrode 551X of the light emitting device 2 is exposed to the etching gas for the dry etching method. Further, the property of the electrode 551X of the light emitting device 2 becomes different from the property of the electrode 551X of the light emitting device 1.

Next, in a device depressurized to 5.0Pa, carbon tetrafluoride (CF for short) was supplied at a flow rate of 80sccm ₄ ) At the same time, CF is performed for 3 seconds with 200W energy ₄ The plasma treatment was performed, next, after the pressure was adjusted to 2.0Pa, with a CF at 200W for 15 seconds while supplying carbon tetrafluoride at a flow rate of 80sccm ₄ And (5) plasma treatment.

[ step 5 ]

In step 5, layer 104X is formed over electrode 551X. Specifically, a material is co-evaporated by a resistance heating method. Further, layer 104X is in PCBBiF: OCHD-003=1: 0.10 Comprises PCBiF and OCHD-003, and has a thickness of 10nm.

[ step 9 ]

In step 9, layer 113X2 is formed on layer 113X 1. Specifically, a material is deposited by a resistance heating method. Further, the layer 113X2 contains mpph 2P, and has a thickness of 15nm.

Next, the work on which the layer 113X2 was formed was taken out from the vacuum apparatus, immersed in pure water for 20 minutes, and then, nitrogen gas was sprayed to remove water droplets adhering to the work.

Then, the workpiece is put into the interior thereof and depressurized to 10 ^-4 In a vacuum vapor deposition apparatus of the order Pa, a vacuum baking is performed for 90 minutes at a temperature of 70 ℃ in a heating chamber in the vacuum vapor deposition apparatus. Then, the mixture was cooled for about 30 minutes.

Furthermore, after the workpiece is taken out from the vacuum apparatus, the workpiece is processed under orange light in the atmosphere. Further, the work was stored in a black box to adjust the working time in the atmosphere including the time of immersion in pure water to 24 hours.

Operating characteristics of light-emitting device 2

The light emitting device 2 emits light EL1 by being supplied with power (see fig. 24). The operating characteristics of the light emitting device 2 were measured at room temperature (refer to fig. 25 to 28). Although the 4-2 th step of the manufacturing method of the light emitting device 2 is the same as that of the comparison device 1 described later, the light emitting device 2 can obtain the same luminance at a lower voltage than that of the comparison device 1 described later with respect to the voltage-luminance characteristics (refer to fig. 26). By using the layer 104X that increases the weight percentage of the electron accepting material, the properties of the damaged electrode 551X in the 4-2 th step of the manufacturing method can be compensated for. Specifically, the property change of the electrode 551X exposed to the etching gas containing oxygen can be compensated for. Further, fig. 29B shows the light emitting state of the light emitting device 2.

< light-emitting device 3>

The light emitting device 3 manufactured described in this embodiment has the same structure as the light emitting device 550X (see fig. 24). The light emitting device 3 is different from the light emitting device 1 in the structure of the layer 104X. Specifically, in the light emitting device 3, the layer 104X is formed of PCBBiF: OCHD-003=1: 0.30 The (weight ratio) contains PCBIF and OCHD-003, and the manufacturing method thereof is different from that of the light-emitting device 1. The differences will be described in detail, and the above description is applied to portions using the same structure and method.

Method for manufacturing light-emitting device 3

The light emitting device 3 described in this embodiment is manufactured by using a method including the following steps.

The manufacturing method of the light emitting device 3 is different from the manufacturing method of the light emitting device 1 in steps 4-2 and 9. The differences will be described in detail, and the above description is applied to portions using the same method.

[ Steps 4-2 ]

In step 4-2, a process of gasifying HMDS to spray it onto a workpiece heated to 60℃for 120 seconds is performed.

Next, in the apparatus depressurized to 5.0Pa, oxygen was supplied at a flow rate of 48 seem, O2 plasma treatment was performed at an energy of 600W for 3 seconds, and then, after the pressure was adjusted to 1.0Pa, oxygen was supplied at a flow rate of 48 seem, O2 plasma treatment was performed at an energy of 600W for 10 seconds. This step corresponds to step 5 in the method for manufacturing a display device described in embodiment 1. Thereby, the electrode 551X of the light emitting device 3 is exposed to the etching gas for the dry etching method. Further, the property of the electrode 551X of the light emitting device 3 becomes different from the property of the electrode 551X of the light emitting device 1.

[ step 5 ]

In step 5, layer 104X is formed over electrode 551X. Specifically, a material is co-evaporated by a resistance heating method. Further, layer 104X is in PCBBiF: OCHD-003=1: 0.30 Comprises PCBiF and OCHD-003, and has a thickness of 10nm.

[ step 9 ]

Operating characteristics of light-emitting device 3

The light emitting device 3 emits light EL1 by being supplied with power (see fig. 24). The operating characteristics of the light emitting device 3 were measured at room temperature (refer to fig. 25 to 28). Although the 4-2 th step of the manufacturing method of the light emitting device 3 is the same as that of the comparison device 1 described later, the light emitting device 3 can obtain the same luminance at a lower voltage than that of the comparison device 1 described later with respect to the voltage-luminance characteristics (refer to fig. 26). Further, although the 4-2 th step of the manufacturing method of the light emitting device 3 is the same as the light emitting device 2, the light emitting device 3 may obtain the same luminance at a lower voltage than the light emitting device 2. By using the layer 104X that increases the weight percentage of the electron accepting material, the properties of the damaged electrode 551X in the 4-2 th step of the manufacturing method can be better compensated for. Specifically, the property change of the electrode 551X exposed to the etching gas containing oxygen can be compensated for. Further, the light emitting state of the light emitting device 3 is uniform compared to the comparison device 1 (refer to fig. 29C).

< comparative device 1>

The manufactured comparison device 1 described in this embodiment has the same structure as the light-emitting device 550X (see fig. 24). The comparison device 1 has the same structure as the light emitting device 1, but the manufacturing method of the comparison device 1 is different from that of the light emitting device 1. The differences will be described in detail, and the above description is applied to portions using the same structure and method.

Method for manufacturing comparative device 1-

The comparison device 1 described in this embodiment was manufactured by using a method including the following steps.

The manufacturing method of the comparison device 1 is different from the manufacturing method of the light emitting device 1 in the 4-2 th step and the 9 th step. The differences will be described in detail, and the above description is applied to portions using the same method.

[ Steps 4-2 ]

Next, in the apparatus depressurized to 5.0Pa, oxygen was supplied at a flow rate of 48 seem, O2 plasma treatment was performed at an energy of 600W for 3 seconds, and then, after the pressure was adjusted to 1.0Pa, oxygen was supplied at a flow rate of 48 seem, O2 plasma treatment was performed at an energy of 600W for 10 seconds. This step corresponds to step 5 in the method for manufacturing a display device described in embodiment 1. Thereby, the electrode 551X of the comparative device 1 is exposed to the etching gas for the dry etching method. Further, the property of the electrode 551X of the comparison device 1 becomes different from the property of the electrode 551X of the light emitting device 1.

[ step 5 ]

In step 5, layer 104X is formed over electrode 551X. Specifically, a material is co-evaporated by a resistance heating method. Further, layer 104X is in PCBBiF: OCHD-003=1: 0.03 Comprises PCBiF and OCHD-003, and has a thickness of 10nm.

[ step 9 ]

Example 2

In this embodiment, a method of processing an electrode of a light emitting device which can be used for a display device according to one embodiment of the present invention is described with reference to fig. 30A to 38.

Fig. 30A is a diagram illustrating a structure of the display apparatus 700-1. Fig. 30B is a view illustrating a part of fig. 30A, and fig. 30C is a view illustrating a cross section along a cut line P-Q of fig. 30B.

Fig. 31A is a diagram illustrating a structure of a light emitting device that can be used for the display apparatus 700-1, and fig. 31B is a diagram illustrating a structure of a light emitting device that can be used for the display apparatus 700-2.

Fig. 32 is a diagram illustrating a method of manufacturing the display device 700-1.

Fig. 33 is a diagram illustrating a method of manufacturing the display device 700-1.

Fig. 34 is a diagram illustrating a method of manufacturing the display device 700-1.

Fig. 35 is a diagram illustrating a method of manufacturing the display device 700-1.

Fig. 36 is a diagram illustrating a method of manufacturing the display device 700-1.

Fig. 37 is a diagram illustrating voltage-current density characteristics of the light emitting devices 550D1, 550E1, and 550F 1.

Fig. 38 is a diagram illustrating voltage-current density characteristics of the light emitting devices 550D2, 550E2, and 550F 2.

< display device 700-1>

The display device 700-1 includes a group of pixels 703 (see fig. 30A). A group of pixels 703 includes a light emitting device 550D1, a light emitting device 550E1, and a light emitting device 550F1 (refer to fig. 30B).

Further, the light emitting device 550D1, the light emitting device 550E1, and the light emitting device 550F1 in the display apparatus 700-1 described in this embodiment each include a layer containing ITSO on the electrode surface. In particular, a case where a treatment method using plasma is applied to the electrode of the light-emitting device 550E1 and the electrode of the light-emitting device 550F1 will be described.

Further, the light emitting device 550D2, the light emitting device 550E2, and the light emitting device 550F2 in the display apparatus 700-2 described later each include a layer containing indium oxide-zinc oxide (InZO) on the electrode surface. In particular, a case where a treatment method using plasma is applied to the electrode of the light-emitting device 550E2 and the electrode of the light-emitting device 550F2 will be described.

Further, the display device 700-1 includes plural sets of pixels 703 in a quadrangular region 2mm wide and 2mm long with a definition of 500 ppi. In other words, the plurality of sets of pixels 703 are included with a period of about 49.5 μm in width and about 49.5 μm in length. The display device 700-1 includes a substrate 510 and a functional layer 520, and the functional layer 520 includes an insulating film 521 (see fig. 30C).

< light-emitting device 550D1>

The light emitting device 550D1 has a rectangular shape having a width of about 16 μm and a length of about 36 μm on the front surface (refer to fig. 30B). Further, the light-emitting device 550D1 includes a reflective film REFD1, an electrode 551D1, a layer 104D1, a cell 103D1, a layer 105D1, an electrode 552D1, and a layer CAP (see fig. 30C).

< light-emitting device 550E1>

The light emitting device 550E1 has a rectangular shape of about 13.25 μm in width and about 17.75 μm in length at the front surface (refer to fig. 30B). Further, the light emitting device 550E1 includes a reflective film REFE1, an electrode 551E1, a layer 104E1, a cell 103E1, a layer 105E1, an electrode 552E1, and a layer CAP (see fig. 30C).

< light-emitting device 550F1>

The light emitting device 550F1 has a rectangular shape of about 13.25 μm in width and about 17.75 μm in length at the front surface (refer to fig. 30B). Further, the light-emitting device 550F1 includes a reflective film REFF1, an electrode 551F1, a layer 104F1, a cell 103F1, a layer 105F1, an electrode 552F1, and a layer CAP (see fig. 30C).

Structure of light-emitting device

Fig. 31A and table 3 show a structure in which "D1", "E1", or "F1" corresponding to the symbol of the structure of the light emitting device 550D1, the light emitting device 550E1, or the light emitting device 550F1 is converted into "X". Note that, for convenience, the subscript text and the superscript text in the table of the present embodiment become normal text. For example, both the subscript text in the abbreviation and the superscript text in the unit become normal text in the table. These descriptions in the tables can be converted into original descriptions by referring to the descriptions in the specification.

TABLE 3

Method for manufacturing display device 700-1-

The display device 700-1 described in this embodiment is manufactured by using a method including the following steps.

[ Steps 1-1 ]

In step 1-1, a reflective film is formed on the insulating film 521. Specifically, the reflective film is formed by a sputtering method using an alloy (abbreviated as "APC") containing silver (Ag), palladium (Pd), and copper (Cu) as a target. Further, the reflective film contains APC, and has a thickness of 100nm.

[ Steps 1-2 ]

In steps 1-2, the reflective film REFD1, the reflective film REFE1, and the reflective film REFF1 are formed using photolithography.

[ Steps 2-1 ]

In step 2-1, a conductive film is formed on the reflective film REFD1, the reflective film REFE1, and the reflective film REFF1. Specifically, the conductive film is formed by a sputtering method using ITSO as a target. Further, the conductive film contains ITSO and has a thickness of 50nm.

[ Steps 2-2 ]

In step 2-2, electrode 551D1, electrode 551E1, and electrode 551F1 are formed using photolithography. Then, the mixture was heated at 200℃for 60 minutes in a nitrogen atmosphere. Electrode 551D1 covers reflective film REFD1, electrode 551E1 covers reflective film REFE1, and electrode 551F1 covers reflective film REFF1.

[ Steps 2-3 ]

In the 2 nd to 3 rd steps, the workpiece formed with the electrode is washed with water, and the workpiece is placed in a vacuum evaporation apparatus. Then, the inside thereof was depressurized to 10 ^-4 Pa, and vacuum baking was performed in a heating chamber in a vacuum vapor deposition apparatus at 200℃for 2.78 hours. Then, the mixture was cooled for about 30 minutes.

[ step 3 ]

In step 3, films are formed on the electrode 551D1, the electrode 551E1, and the electrode 551F 1. Specifically, a material is co-evaporated by a resistance heating method. In addition, the film was in PCBBiF: OCHD-003=1: 0.03 Comprises PCBiF and OCHD-003, and has a thickness of 11.4nm.

[ step 4 ]

In step 4, a laminated film is formed. Specifically, a material is deposited by a resistance heating method. The laminated film has a structure to be the cell 103D1 later. The unit 103D1 has a structure in which the symbol "X" in fig. 31A and table 3 is converted into "D1".

[ step 5-1 ]

In step 5-1, a laminated film which will be a film 529_1 later is formed over the laminated film (see fig. 32). Specifically, a laminate film is formed in which a film containing tris (8-hydroxyquinoline) aluminum (III) (abbreviated as Alq) formed by a resistance heating method is laminated ₃ ) And a film having a thickness of 10nm, a film comprising alumina and having a thickness of 30nm formed by an ALD method, and a film comprising molybdenum (Mo) and having a thickness of 50nm formed by a sputtering method.

[ Steps 5-2 ]

In step 5-2, the laminated film is processed into a predetermined shape to form a film 529_1. Specifically, unnecessary portions are removed by using a resist RES and an etching method.

First, a resist RES is formed using a photosensitive polymer. The resist RES overlaps with the electrode 551D 1. Next, unnecessary portions of the metal film including Mo are removed by using a resist RES and a dry etching method. Specifically, by incorporating carbon tetrafluoride (abbreviated as CF ₄ ) A gas of oxygen and helium is used as an etching gas to process a metal film containing Mo. Next, the resist RES is removed using a solution containing tetramethylammonium hydroxide (abbreviated as TMAH).

Next, unnecessary portions of the film containing aluminum oxide are removed by using a metal film containing Mo and a dry etching method. Specifically, by incorporating a trifluoromethane (abbreviated as CHF) ₃ ) And helium (He) gas is used as an etching gas to process the film containing aluminum oxide. In addition, a metal film containing Mo is used as a hard mask.

[ Steps 5-3 ]

In step 5-3, the film 529_1, the cell 103D1, and the layer 104D1 are processed into a predetermined shape (see fig. 33). Specifically, unnecessary portions are removed using a dry etching method. In the apparatus depressurized to 2.0Pa, oxygen was supplied at a flow rate of 167sccm, and the apparatus was subjected to processing at an energy of 1000W. Further, the film 529_1 is used as a hard mask. Further, the layer 104D1, the cell 103D1, and the film 529_1 overlap with the electrode 551D 1.

After the 5-1 th to 5-3 th steps are completed, as a work, the structures of the electrode 551D1 of the light emitting device to the cell 103D1 are formed, and the film 529_1 is formed on the cell 103D 1.

Further, the electrode 551E1 and the electrode 551F1 are exposed. The electrode 551E1 and the electrode 551F1 are exposed to an etching gas used for the dry etching method. The surface properties of the electrode 551E1 and the electrode 551F1 are different from those of the electrode 551D 1.

In addition, a work in which a partial structure of the light emitting device is formed and one or more electrodes are exposed can be said to be a semi-finished product. In the case where an electrode is exposed in the semi-finished product, other light emitting devices may be manufactured on the electrode.

[ step 6 ]

In step 6, the exposed electrode is subjected to plasmaIs performed by the processor. Specifically, in an apparatus depressurized to 2.0Pa, CF is contained in the supply ₄ The gases of oxygen and helium were simultaneously subjected to plasma treatment at 1000W for 15 seconds. By performing the treatment with plasma, the properties of the electrode 551E1 and the electrode 551F1 are changed.

Then, the workpiece was placed in a vacuum vapor deposition apparatus, and the inside thereof was depressurized to 10 ^-4 Pa, and vacuum baking was performed in a heating chamber in a vacuum vapor deposition apparatus at 80℃for 2.78 hours. Then, the mixture was cooled for about 30 minutes.

[ step 7 ]

In step 7, films are formed on the electrode 551D1, the electrode 551E1, and the electrode 551F 1. Specifically, the same processing as in step 3 is performed.

[ step 8 ]

In step 8, a laminated film is formed. Specifically, the same processing as in step 4 is performed. The laminated film has a structure to be the cell 103E1 later. The cell 103E1 has a structure in which the symbol "X" in fig. 31A and table 3 is converted into "E1".

[ step 9-1 ]

In step 9-1, a laminated film which will be a film 529_1 later is formed over the laminated film. Specifically, the same processing as in step 5-1 is performed.

[ step 9-2 ]

In step 9-2, the laminated film is processed into a predetermined shape to form a film 529_1. Specifically, the same processing as in step 5-2 is performed. With respect to the description of the 9-2 th step, the symbol "D1" may be converted to "E1" to apply the description of the 5-2 th step.

[ Steps 9-3 ]

In step 9-3, the film 529_1, the cell 103E1, and the layer 104E1 are processed into predetermined shapes (see fig. 34). Specifically, the same processing as in steps 5 to 3 is performed. With respect to the description of the 9 th to 3 th steps, the symbol "D1" may be converted to "E1" to apply the description of the 5 th to 3 th steps.

After the 9-1 th to 9-3 th steps are completed, as a work, the structures of the electrode 551E1 of the light emitting device to the cell 103E1 are formed, and the film 529_1 is formed on the cell 103E 1.

Further, the electrode 551F1 is exposed. The electrode 551F1 is exposed to an etching gas for a dry etching method. The surface property of the electrode 551F1 is different from that of the electrode 551D1 or the electrode 551E 1.

[ step 10 ]

In step 10, the exposed electrode is subjected to a treatment with plasma. Specifically, in an apparatus depressurized to 2.0Pa, CF is contained in the supply ₄ The gases of oxygen and helium were simultaneously subjected to plasma treatment at 1000W for 15 seconds. By performing the treatment with plasma, the property of the electrode 551F1 is changed.

[ step 11 ]

In step 11, films are formed on the electrode 551D1, the electrode 551E1, and the electrode 551F 1. Specifically, the same processing as in step 3 is performed.

[ step 12 ]

In step 12, a laminated film is formed. Specifically, the same processing as in step 4 is performed. The laminated film has a structure to be the cell 103F1 later. The unit 103F1 has a structure in which the symbol "X" in fig. 31A and table 3 is converted into "F1".

[ step 13-1 ]

In step 13-1, a laminated film which will be a film 529_1 later is formed over the laminated film. Specifically, the same processing as in step 5-1 is performed.

[ step 13-2 ]

In step 13-2, the laminated film is processed into a predetermined shape to form a film 529_1. Specifically, the same processing as in step 5-2 is performed. With respect to the explanation of step 13-2, the symbol "D1" may be converted to "F1" to apply the explanation of step 5-2.

[ Steps 13-3 ]

In step 13-3, the film 529_1, the cell 103F1, and the layer 104F1 are processed into a predetermined shape (see fig. 35). Specifically, the same processing as in steps 5 to 3 is performed. With respect to the explanation of the 13 th to 3 rd steps, the symbol "D1" may be converted to "F1" to apply the explanation of the 5 th to 3 rd steps.

After the 13-1 th to 13-3 rd steps are completed, as a work, the structures of the electrode 551F1 of the light emitting device to the cell 103F1 are formed, and the film 529_1 is formed on the cell 103F 1.

[ step 14 ]

In step 14, the metal film containing Mo is removed from the film 529_1, so that an insulating film containing aluminum oxide remains. Specifically, a carbon tetrafluoride (CF for short) ₄ ) Oxygen and helium gases and dry etching methods.

[ step 15 ]

In step 15, a film 529_2 is formed over the film 529_1. Specifically, the workpiece is placed in an ALD deposition device and the ALD process is used to deposit material. Further, the film 529_2 contains aluminum oxide, and has a thickness of 15nm.

[ step 16 ]

In step 16, an insulating film 529_3 is formed over the film 529_2. Specifically, a photosensitive polymer and a photolithography method are used. The insulating film 529_3 is embedded in a gap between the electrode 551D1 and the electrode 551E1 and a gap between the electrode 551E1 and the electrode 551F1, and includes an opening overlapping the electrode 551D1, an opening overlapping the electrode 551E1, and an opening overlapping the electrode 551F 1.

Further, the insulating film 529_3 is processed into a predetermined shape by heating the workpiece. Specifically, the insulating film 529_3 is formed in a curved surface shape continuously from the top surface to the side surface by heating at 100 ℃ for 60 minutes in an atmosphere.

[ step 17 ]

In step 17, the film 529_1 and the film 529_2 are processed into predetermined shapes. Specifically, unnecessary portions are removed by using an aqueous solution containing hydrofluoric acid (HF) and an etching method, so that the cells 103D1, 103E1, and 103F1 are exposed. Further, the film 529_2 is used as a resist.

Then, the workpiece was placed in a vacuum vapor deposition apparatus, and the inside thereof was depressurized to 10 ^-4 Pa, and vacuum baking was performed in a heating chamber in a vacuum vapor deposition apparatus at 80℃for 1.5 hours. Then, the mixture was cooled for about 30 minutes.

[ step 18 ]

In step 18, layer 105 is formed on cell 103D1, cell 103E1, and cell 103F1 (see fig. 36). Specifically, a material is co-evaporated by a resistance heating method. In addition, layer 105 comprises lithium fluoride (LiF) and ytterbium (Yb), wherein LiF: yb=1: 1 (volume ratio), and a thickness of 1nm.

[ step 19 ]

In step 19, a conductive film 552 is formed over the layer 105. Specifically, a material is co-evaporated by a resistance heating method. Further, the conductive film 552 includes silver (Ag) and magnesium (Mg), wherein Ag: mg=1: 0.1 (weight ratio), and the thickness was 15nm. Further, the conductive film 552 includes an electrode 552D1, an electrode 552E1, and an electrode 552F1.

[ step 20 ]

In step 20, a layer CAP is formed on the conductive film 552. Specifically, the layer CAP is formed by a sputtering method using indium oxide-gallium oxide-zinc oxide (IGZO) as a target. Further, the layer CAP contains IGZO and has a thickness of 70nm.

The display device 700-1 is manufactured by the above method.

< operating characteristics of display device 700-1 >

The display device 700-1 includes the light emitting device 550D1, the light emitting device 550E1, and the light emitting device 550F1 with a definition of 500 ppi.

Operating characteristics of light emitting device 550D 1-

The light emitting device 550D1 emits light ELD due to power supply (refer to fig. 30C). The operating characteristics of the light emitting device 550D1 were measured at room temperature (refer to fig. 37). In addition, in the measurement region, the light emitting device 550D1 occupies 23.58% of the area of the measurement region. By using the area ratio, the measurement value is corrected.

Table 4 shows that the light-emitting device manufactured was 10.0mA/cm in current density due to supply ² The main initial characteristics of the light-emitting device when the light is emitted by the left and right currents. Further, table 4 also shows characteristics of other light emitting devices described later.

TABLE 4

As can be seen from this, the light emitting device 550D1 has good characteristics.

Operating characteristics of light-emitting device 550E 1-

The light emitting device 550E1 emits light ELE due to being supplied with power (refer to fig. 30C). The operating characteristics of the light emitting device 550E1 were measured at room temperature (refer to fig. 37). In addition, in the measurement region, the light emitting device 550E1 occupies 9.76% of the area of the measurement region. By using the area ratio, the measurement value is corrected.

Table 4 shows that the light-emitting device manufactured was 10.0mA/cm in current density due to supply ² The main initial characteristics of the light-emitting device when the light is emitted by the left and right currents.

As can be seen from this, the light emitting device 550E1 has good characteristics. Although the property of the electrode 551E1 is changed in the 6 th step, in order for a current equal to the light emitting device 550D1 to flow through the light emitting device 550E1, a higher voltage than the light emitting device 550D1 is required.

Operating characteristics of light-emitting device 550F 1-

The light emitting device 550F1 emits light ELF due to power supply (refer to fig. 30C). The operating characteristics of the light emitting device 550F1 were measured at room temperature (refer to fig. 37). In addition, in the measurement region, the light emitting device 550F1 occupies 9.76% of the area of the measurement region. By using the area ratio, the measurement value is corrected.

As can be seen from this, the light emitting device 550F1 has good characteristics. Although the property of the electrode 551F1 is changed in the 10 th step, in order for a current equal to the light emitting device 550D1 to flow through the light emitting device 550F1, a higher voltage than the light emitting device 550D1 is required.

< display device 700-2>

Like the display device 700-1, the display device 700-2 includes a group of pixels 703. In addition, the display device 700-2 is different from the display device 700-1 in that: in the display device 700-2, a group of pixels 703 includes the light emitting device 550D2, the light emitting device 550E2, and the light emitting device 550F2 in place of the light emitting device 550D1, the light emitting device 550E1, and the light emitting device 550F1. In addition, the light emitting device 550D2, the light emitting device 550E2, and the light emitting device 550F2 each include a layer containing InZO on the electrode surface. The differences will be described in detail, and the above description is applied to portions using the same structure and method.

Structure of light-emitting device

Fig. 31B and table 5 show a structure in which "D2", "E2", or "F2" corresponding to the symbol of the structure of the light emitting device 550D2, the light emitting device 550E2, or the light emitting device 550F2 is converted into "X". Note that, for convenience, the subscript text and the superscript text in the table of the present embodiment become normal text. For example, both the subscript text in the abbreviation and the superscript text in the unit become normal text in the table. These descriptions in the tables can be converted into original descriptions by referring to the descriptions in the specification.

TABLE 5

Method for manufacturing display device 700-2-

The display device 700-2 described in this embodiment is manufactured by using a method including the following steps.

The manufacturing method of the display device 700-2 is different from the manufacturing method of the display device 700-1 in that: in step 2-1 of the manufacturing method of the display device 700-2, a conductive film including ITSO is formed over the reflective film REFD2, the reflective film REFE2, and the reflective film REFF2, and a conductive film including InZO is formed over the conductive film including ITSO. The differences will be described in detail, and the signs "D1", "E1" and "F1" used in the above description will be converted to "D2", "E2" and "F2", respectively, in regard to the portions using the same structures and methods, and the above description will be applied.

[ Steps 2-1 ]

In step 2-1, a conductive film is formed on the reflective film REFD2, the reflective film REFE2, and the reflective film REFF 2. Specifically, the conductive film is formed by a sputtering method using ITSO and InZO as targets. Further, the conductive film has a film containing ITSO and having a thickness of 30nm and a film containing InZO and having a thickness of 20 nm.

[ Steps 2-2 ]

In step 2-2, the conductive film TCOD2 and the electrode 551D2, the conductive film TCOE2 and the electrode 551E2, the conductive film TCOF2 and the electrode 551F2 are formed using photolithography. Then, the mixture was heated at 200℃for 60 minutes in a nitrogen atmosphere.

< operating characteristics of display device 700-2 >

The display device 700-2 includes the light emitting device 550D2, the light emitting device 550E2, and the light emitting device 550F2 with a definition of 500 ppi.

Operating characteristics of light emitting device 550D2

The light emitting device 550D2 emits light due to being supplied with power. The operating characteristics of the light emitting device 550D2 were measured at room temperature (refer to fig. 38). In addition, in the measurement region, the light emitting device 550D2 occupies 23.58% of the area of the measurement region. By using the area ratio, the measurement value is corrected.

Table 6 shows that the light-emitting device manufactured was 10.0mA/cm in current density due to supply ² The main initial characteristics of the light-emitting device when the light is emitted by the left and right currents. Further, table 6 also shows characteristics of other light emitting devices described later.

TABLE 6

As can be seen from this, the light emitting device 550D2 has good characteristics. Further, the driving voltage of the light emitting device 550D2 is lower than the driving voltage of the light emitting device 550D 1.

Operating characteristics of light-emitting device 550E2

The light emitting device 550E2 emits light due to being supplied with power. The operation characteristics of the light emitting device 550E2 were measured at room temperature (refer to fig. 38). In addition, in the measurement region, the light emitting device 550E2 occupies 9.76% of the area of the measurement region. By using the area ratio, the measurement value is corrected.

Table 6 shows that the light-emitting device manufactured was 10.0mA/cm in current density due to supply ² The main initial characteristics of the light-emitting device when the light is emitted by the left and right currents.

As can be seen from this, the light emitting device 550E2 has good characteristics. Although the property of the electrode 551E2 is changed in the 6 th step, in order for a current equal to the light emitting device 550D2 to flow through the light emitting device 550E2, a higher voltage than the light emitting device 550D2 is required.

Operating characteristics of light-emitting device 550F2

The light emitting device 550F2 emits light due to being supplied with power. The operating characteristics of the light emitting device 550F2 were measured at room temperature (refer to fig. 38). In addition, in the measurement region, the light emitting device 550F2 occupies 9.76% of the area of the measurement region. By using the area ratio, the measurement value is corrected.

As can be seen from this, the light emitting device 550F2 has good characteristics. Although the property of the electrode 551F2 is changed in the 10 th step, in order for a current equal to the light emitting device 550D2 to flow through the light emitting device 550F2, a higher voltage than the light emitting device 550D2 is required.

Example 3

In this embodiment, a method for processing a conductive film which can be used for a display device according to one embodiment of the present invention is described with reference to fig. 39A to 39D.

Fig. 39A is a perspective view illustrating the structure of a workpiece, and fig. 39B, 39C, and 39D are sectional views illustrating a processing method of a conductive film.

< conductive film D1>

The conductive film D1 described in this embodiment can be used for a display device according to one embodiment of the present invention. Specifically, it can be used for the electrode 551X of the light emitting device 550X.

Method for producing conductive film D1

The conductive film D1 is manufactured by using a method including the following steps (see fig. 39A and 39B).

[ step 1 ]

In step 1, a conductive film is formed over a substrate 510. Specifically, a conductive film is formed over a quartz substrate by a sputtering method using indium oxide-tin oxide (abbreviated as ITSO) containing silicon or silicon oxide as a target. Then, the mixture was heated at 200℃for 60 minutes in a nitrogen atmosphere. Further, the conductive film contains ITSO and has a thickness of 10nm.

Characteristic of conductive film D1

The sheet resistance of the conductive film D1 was measured. Table 7 shows the sheet resistance of the conductive film. Further, table 7 also shows sheet resistances of other conductive films having structures described later.

TABLE 7

The sheet resistance of the conductive film D1 is preferable. On the other hand, the sheet resistance of the conductive film D11 described later is higher than that of the conductive film D1. The electrical conductivity of ITSO results from the energy level formed by tin atoms or oxygen vacancies. In the method for producing the conductive film D11, it is possible to supplement oxygen to the oxygen vacancies in the step 2. In addition, the sheet resistance of the conductive film E1 described later is lower than that of the conductive film D11. In the method for manufacturing the conductive film E1, a film containing CF is used ₄ In step 3 of the gas of (a), ITSO is reduced by carbon contained in the generated plasma, and an energy level contributing to conductivity may be reformed in the conductive film E1.

< conductive film D11>

The conductive film D11 can be used in a display device according to one embodiment of the present invention. Specifically, it can be used for the electrode 551X of the light emitting device 550X.

Method for producing conductive film D11

The conductive film D11 described in this embodiment is manufactured by using a method including the following steps (see fig. 39A and 39C). Further, the manufacturing method of the conductive film D11 is different from the manufacturing method of the conductive film D1 in that: the method for manufacturing the conductive film D11 includes a 2 nd step after the 1 st step. The differences will be described in detail, and the above description is applied to portions using the same method.

[ step 2 ]

In step 2, specifically, in an apparatus depressurized to 2.0Pa, oxygen was supplied at a flow rate of 167sccm, and O2 plasma treatment was performed at an energy of 1000W for 60 seconds. This step corresponds to step 5 of the method for manufacturing a display device described in embodiment 1. Thereby, the conductive film is exposed to an etching gas for a dry etching method. Further, the property of the conductive film D11 is different from that of the conductive film D1.

Characteristic of conductive film D11

The sheet resistance of the conductive film D11 was measured. Table 7 shows the sheet resistance of the conductive film.

< conductive film E1>

The conductive film E1 can be used in a display device according to one embodiment of the present invention. Specifically, it can be used for the electrode 551X of the light emitting device 550X.

Method for producing conductive film E1-

The conductive film E1 described in this embodiment is manufactured by using a method including the following steps (see fig. 39A and 39D). Further, the manufacturing method of the conductive film E1 is different from the manufacturing method of the conductive film D1 in that: the method for manufacturing the conductive film E1 includes a step 2 and a step 3 after the step 1. The differences will be described in detail, and the above description is applied to portions using the same method.

[ step 2 ]

In step 2, specifically, in an apparatus depressurized to 2.0Pa, oxygen was supplied at a flow rate of 167sccm, and O2 plasma treatment was performed at an energy of 1000W for 60 seconds. This step corresponds to step 5 of the method for manufacturing a display device described in embodiment 1. Thereby, the conductive film is exposed to an etching gas for a dry etching method. Further, the properties of the conductive film E1 are different from those of the conductive film D1.

[ step 3 ]

In the 3 rd step, in an apparatus depressurized to 2.0Pa, carbon tetrafluoride (CF for short) was supplied at a flow rate of 100sccm ₄ ) While oxygen was supplied at a flow rate of 67sccm and helium (He) was supplied at a flow rate of 333sccm, plasma treatment was performed at an energy of 1000W for 15 seconds. Thus, the properties of the conductive film E1 are different from those of the conductive film D11.

Characteristic of conductive film E1

The sheet resistance of the conductive film E1 was measured. Table 7 shows the sheet resistance of the conductive film.

< conductive film D2>

The conductive film D2 (not shown) described in this embodiment can be used in a display device according to one embodiment of the present invention. Specifically, it can be used for the electrode 551X of the light emitting device 550X.

Method for producing conductive film D2

The conductive film D2 is manufactured by using a method including the following steps. Further, the manufacturing method of the conductive film D2 is different from the manufacturing method of the conductive film D1 in that: in step 1 of the method for manufacturing the conductive film D2, the conductive film is formed by a sputtering method using InZO as a target instead of ITSO. The differences will be described in detail, and the above description is applied to portions using the same method.

[ step 1 ]

In step 1, a conductive film is formed on a quartz substrate. Specifically, a conductive film is formed over a quartz substrate by a sputtering method using InZO as a target. Then, the mixture was heated at 200℃for 60 minutes in a nitrogen atmosphere. Further, the conductive film contains InZO, and has a thickness of 10nm.

Characteristic of conductive film D2

The sheet resistance of the conductive film D2 was measured. Table 7 shows the sheet resistance of the conductive film.

The sheet resistance of the conductive film D2 is preferable. On the other hand, the sheet resistance of the conductive film D21 described later is higher than that of the conductive film D2. The conductivity of InZO is derived from tin atoms orEnergy level of oxygen vacancy formation. In the method for producing the conductive film D21, it is possible to supplement oxygen to the oxygen vacancies in the step 2. In addition, the sheet resistance of the conductive film E2 described later is lower than that of the conductive film D21. In the method for manufacturing the conductive film E2, a film containing CF is used ₄ In step 3 of the gas of (a), the energy level contributing to conductivity may be reformed in the conductive film E2 by the reduction of InZO due to carbon contained in the generated plasma.

Further, the sheet resistance of the conductive film D2 is lower than that of the conductive film D1, and the carrier concentration of the conductive film D2 is higher than that of the conductive film D1. As shown in embodiment 2, the driving voltage of the light emitting device using InZO for the electrode 551X is lower than the driving voltage of the light emitting device using ITSO for the electrode 551X. The conductive film D2 is superior to the conductive film D1 in terms of easiness of hole transfer from the electrode 551X to the layer 104X.

< conductive film D21>

The conductive film D21 (not shown) can be used in a display device according to one embodiment of the present invention. Specifically, it can be used for the electrode 551X of the light emitting device 550X.

Method for producing conductive film D21

The conductive film D21 described in this embodiment is manufactured by using a method including the following steps. Further, the manufacturing method of the conductive film D21 is different from the manufacturing method of the conductive film D2 in that: the method for manufacturing the conductive film D21 includes a 2 nd step after the 1 st step. The differences will be described in detail, and the above description is applied to portions using the same method.

[ step 2 ]

In step 2, specifically, in an apparatus depressurized to 2.0Pa, oxygen was supplied at a flow rate of 167sccm, and O2 plasma treatment was performed at an energy of 1000W for 60 seconds. This step corresponds to step 5 of the method for manufacturing a display device described in embodiment 1. Thereby, the conductive film is exposed to an etching gas for a dry etching method. Further, the property of the conductive film D21 is different from that of the conductive film D2.

Characteristic of conductive film D21

The sheet resistance of the conductive film D21 was measured. Table 7 shows the sheet resistance of the conductive film.

< conductive film E2>

The conductive film E2 can be used in a display device according to one embodiment of the present invention. Specifically, it can be used for the electrode 551X of the light emitting device 550X.

Method for producing conductive film E2

The conductive film E2 described in this embodiment is manufactured by using a method including the following steps. Further, the manufacturing method of the conductive film E2 is different from the manufacturing method of the conductive film D2 in that: the method for manufacturing the conductive film E2 includes a step 2 and a step 3 after the step 1. The differences will be described in detail, and the above description is applied to portions using the same method.

[ step 2 ]

In step 2, specifically, in an apparatus depressurized to 2.0Pa, oxygen was supplied at a flow rate of 167sccm, and O2 plasma treatment was performed at an energy of 1000W for 60 seconds. This step corresponds to step 5 of the method for manufacturing a display device described in embodiment 1. Thereby, the conductive film is exposed to an etching gas for a dry etching method. Further, the properties of the conductive film E2 are different from those of the conductive film D2.

[ step 3 ]

In the 3 rd step, in an apparatus depressurized to 2.0Pa, carbon tetrafluoride (CF for short) was supplied at a flow rate of 100sccm ₄ ) While oxygen was supplied at a flow rate of 67sccm and helium (He) was supplied at a flow rate of 333sccm, plasma treatment was performed at an energy of 1000W for 15 seconds. Thus, the properties of the conductive film E2 are different from those of the conductive film D21.

Characteristics of conductive film E2

The sheet resistance of the conductive film E2 was measured. Table 7 shows the sheet resistance of the conductive film.

Example 4

In this embodiment, a display device 700-3 according to an embodiment of the present invention is described with reference to fig. 40A to 69.

Fig. 40A is a perspective view illustrating the structure of the display device 700-3. Fig. 40B is a front view illustrating a partial structure of the display device 700-3 shown in fig. 40A, and fig. 40C is a sectional view illustrating a structure of the display device 700-3 along a cut-off line P-Q shown in fig. 40A.

Fig. 41A is a sectional view illustrating the structure of the light emitting device a. Fig. 41B is a sectional view illustrating the structure of the light emitting device B. Fig. 41C is a sectional view illustrating the structure of the light emitting device C.

Fig. 42 is a graph illustrating current density-luminance characteristics of the light emitting device a.

Fig. 43 is a diagram illustrating luminance-current efficiency characteristics of the light emitting device a.

Fig. 44 is a diagram illustrating the voltage-luminance characteristics of the light emitting device a.

Fig. 45 is a graph illustrating the voltage-current density characteristic of the light emitting device a.

Fig. 46 is a graph illustrating the luminance-blue efficiency index characteristic of the light emitting device a.

Note that the Blue efficiency Index (BI: blue Index) is one of indexes indicating characteristics of a Blue light emitting device, and is a value obtained by dividing current efficiency (cd/a) by y chromaticity. In general, blue light having high color purity is useful for exhibiting a wide color gamut. In addition, the higher the color purity of blue light, the smaller the y chromaticity tends to be. Thus, the value of current efficiency (cd/a) divided by y chromaticity is an index indicating the usefulness of the blue light emitting device. In other words, in order to realize a display device having a wide color gamut and high efficiency, a blue light emitting device having a high BI can be said to be preferable.

FIG. 47 is a view illustrating the light-emitting device A at 1000cd/m ² Is a graph of an emission spectrum when the luminance of the light is emitted.

FIG. 48 is a graph illustrating the flow rate of 50mA/cm ² A graph of normalized luminance over time when light emitting device a emits light.

Fig. 49 is a diagram illustrating current density-luminance characteristics of the light emitting device B and the comparison device B.

Fig. 50 is a diagram illustrating luminance-current efficiency characteristics of the light emitting device B and the comparison device B.

Fig. 51 is a diagram illustrating voltage-luminance characteristics of the light emitting device B and the comparison device B.

Fig. 52 is a diagram illustrating voltage-current density characteristics of the light emitting device B and the comparison device B.

FIG. 53 is a view illustrating the light-emitting device B and the comparison device B at 1000cd/m ² Is a graph of an emission spectrum when the luminance of the light is emitted.

FIG. 54 is a graph illustrating the flow rate of 50mA/cm ² A graph of normalized luminance over time when the light emitting device B and the comparison device B emit light.

Fig. 55 is a diagram illustrating current density-luminance characteristics of the light emitting device C and the comparison device C.

Fig. 56 is a diagram illustrating luminance-current efficiency characteristics of the light emitting device C and the comparison device C.

Fig. 57 is a diagram illustrating voltage-luminance characteristics of the light emitting device C and the comparison device C.

Fig. 58 is a diagram illustrating voltage-current density characteristics of the light emitting device C and the comparison device C.

FIG. 59 is a view illustrating the light emitting device C and the comparison device C at 1000cd/m ² Is a graph of an emission spectrum when the luminance of the light is emitted.

FIG. 60 is a graph illustrating the flow rate of 50mA/cm ² A graph of normalized luminance over time when the light emitting device C and the comparison device C emit light.

Fig. 61 is a diagram illustrating a method of manufacturing the display device 700-3.

Fig. 62 is a diagram illustrating a method of manufacturing the display device 700-3.

Fig. 63 is a diagram illustrating a method of manufacturing the display device 700-3.

Fig. 64 is a diagram illustrating a method of manufacturing the display device 700-3.

Fig. 65 is a diagram illustrating a method of manufacturing the display device 700-3.

Fig. 66 is a diagram illustrating a method of manufacturing the display device 700-3.

Fig. 67 is a diagram illustrating a method of manufacturing the display device 700-3.

Fig. 68 is a diagram illustrating a method of manufacturing the display device 700-3.

Fig. 69 is a diagram illustrating a method of manufacturing the display device 700-3.

< display device 700-3>

The manufactured display device 700-3 described in this embodiment includes a substrate 510, a functional layer 520, and a group of pixels 703 (see fig. 40A). Further, the display device 700-3 includes plural sets of pixels 703 with a definition of 3207ppi, and the plural sets of pixels 703 are arranged in such a manner that a longitudinal pitch is 7.92 μm and a lateral pitch is 7.92 μm.

A group of pixels 703 includes a light emitting device a, a light emitting device B, and a light emitting device C (refer to fig. 40B and 40C).

The functional layer 520 is sandwiched between the substrate 510 and the light emitting device a. The functional layer 520 includes an insulating film 521, and a light emitting device a, a light emitting device B, and a light emitting device C are formed on the insulating film 521.

Further, the display device 700 includes the conductive film 552, the layer 105, the insulating film 529_3, the film 529_2, and the film 529_1.

The conductive film 552 overlaps with the insulating film 521, and the conductive film 552 includes an electrode 552A, an electrode 552B, and an electrode 552C. The layer 105 is sandwiched between the conductive film 552 and the insulating film 521, and the layer 105 includes a layer 105A, a layer 105B, and a layer 105C.

The insulating film 529_3 is sandwiched between the conductive film 552 and the insulating film 521. Further, a gap 551AB is provided between the electrode 551B and the electrode 551A, and an insulating film 529_3 overlaps with the gap 551 AB. Further, the insulating film 529_3 includes a plurality of openings, one of which overlaps with the electrode 551A, the other of which overlaps with the electrode 551B, and the other of which overlaps with the electrode 551C.

The film 529_2 is sandwiched between the insulating film 529_3 and the insulating film 521. The film 529_2 includes a region in contact with the layer 104A, the layer 104B, and the layer 104C. The film 529_2 includes a region in contact with the cell 103A, the cell 103B, and the cell 103C.

Further, the film 529_2 includes openings, one of which overlaps with the electrode 551A, the other of which overlaps with the electrode 551B, and the other of which overlaps with the electrode 551C. Further, the film 529_2 overlaps with the gap 551 AB.

Further, the film 529_1 is sandwiched between the film 529_2 and the insulating film 521.

Structure of light-emitting device A

The light emitting device a includes a reflective film REFA, an electrode 551A, an electrode 552A, a cell 103A, a layer 104A, a layer 105A, and a layer CAP (see fig. 40C). Further, the light emitting device a has a rectangular shape with a width of 6.92 μm and a length of 2.73 μm (see fig. 40B).

The reflective film REFA includes a layer REFA1, a layer REFA2, and a layer REFA3 (see fig. 41A). Further, the unit 103A includes a layer 112A, a layer 113A1, a layer 113A2, and a layer 111A.

Table 8 shows the detailed structure of the manufactured light emitting device a described in this embodiment. The structural formula of the material used for the light emitting device described in this embodiment is also shown below. Note that, for convenience, the subscript text and the superscript text in the table of the present embodiment become normal text. For example, both the subscript text in the abbreviation and the superscript text in the unit become normal text in the table. These descriptions in the tables can be converted into original descriptions by referring to the descriptions in the specification.

TABLE 8

[ chemical formula 4]

/>

In this example, titanium (Ti), aluminum (Al), indium oxide-tin oxide containing silicon or silicon oxide (abbreviated as ITSO), N- (biphenyl-4-yl) -N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -9, 9-dimethyl-9H-fluoren-2-amine (abbreviated as PCBIF), electron-accepting material (OCHD-003), N-bis [4- (dibenzofuran-4-yl) phenyl ] -4-amino-p-terphenyl (abbreviated as DBBB 1 TP), 9- (1-naphthyl) -10- [4- (2-naphthyl) phenyl ] anthracene (abbreviated as αN- βNPAnth), N '-diphenyl-N, N' -bis (9-phenyl-9H-carbazol-2-yl) naphtho [2,3-b;6,7-b '] bis benzofuran-3, 10-diamine (abbreviated as: 3, 10PCA2Nbf (IV) -02), 2- {3- [3- (N-phenyl-9H-carbazol-3-yl) -9H-carbazol-9-yl ] phenyl } dibenzo [ f, H ] quinoxaline (abbreviated as: 2 mPCzPDBq), 2' - (1, 3-phenylene) bis (9-phenyl-1, 10-phenanthroline) (abbreviated as: mPPHen 2P), lithium fluoride (LiF), ytterbium (Yb), silver (Ag), magnesium (Mg), indium oxide-tin oxide (abbreviated as: ITO) to fabricate a light emitting device.

Operating characteristics of light-emitting device A

The light emitting device a emits light ELA due to being supplied with power (refer to fig. 40C). The operating characteristics of the light emitting device a were measured at room temperature (refer to fig. 42 to 48). Note that the luminance, CIE chromaticity, and emission spectrum were measured using a spectroradiometer (SR-UL 1R manufactured by the topukang corporation).

Table 9 shows that the light-emitting device fabricated was set to a luminance of 1000cd/m ² The main initial characteristics when emitting light right and left. Further, table 9 also shows characteristics of other light emitting devices described later.

In addition, table 10 shows that the current density was constant (50 mA/cm ² ) The elapsed time LT90 from the reduction of the luminance after the light-emitting device emits light to 90% of the initial luminance. Further, table 10 also shows characteristics of other light emitting devices described later.

TABLE 9

TABLE 10

From this, it is seen that the light emitting device a has good characteristics. For example, the light emitting device a may be driven at a low voltage. Further, blue with high color purity can be displayed.

Structure of light-emitting device B

The light emitting device B includes a reflective film REFB, an electrode 551B, an electrode 552B, a cell 103B, a layer 104B, a layer 105B, and a layer CAP (see fig. 40C). Further, the light emitting device B has a rectangular shape with a width of 2.96 μm and a length of 3.19 μm (see fig. 40B).

The reflective film REFB includes a layer REFB1, a layer REFB2, and a layer REFB3 (refer to fig. 41B). Further, the unit 103B includes a layer 112B, a layer 113B1, a layer 113B2, and a layer 111B.

Table 11 shows the detailed structure of the manufactured light emitting device B described in this embodiment. The structural formula of the material used for the light emitting device described in this embodiment is also shown below. Note that, for convenience, the subscript text and the superscript text in the table of the present embodiment become normal text. For example, both the subscript text in the abbreviation and the superscript text in the unit become normal text in the table. These descriptions in the tables can be converted into original descriptions by referring to the descriptions in the specification.

TABLE 11

Operating characteristics of light-emitting device B

The light emitting device B emits light ELB due to being supplied with power (refer to fig. 40C). The operating characteristics of the light emitting device B were measured at room temperature (refer to fig. 49 to 54). Note that the luminance, CIE chromaticity, and emission spectrum were measured using a spectroradiometer (SR-UL 1R manufactured by the topukang corporation).

Table 9 shows that the light-emitting device fabricated was set to a luminance of 1000cd/m ² The main initial characteristics when emitting light right and left. In addition, table 10 shows that the current density was constant (50 mA/cm ² ) The elapsed time LT90 from the reduction of the luminance after the light-emitting device emits light to 90% of the initial luminance.

As can be seen from this, the light emitting device B has good characteristics. For example, the light emitting device B may be driven at a low voltage. In addition, green with high color purity can be displayed.

Structure of light-emitting device C

The light-emitting device C includes a reflective film REFC, an electrode 551C, an electrode 552C, a cell 103C, a layer 104C, a layer 105C, and a layer CAP (see fig. 40C). Further, the light emitting device C has a rectangular shape with a width of 2.96 μm and a length of 3.19 μm (see fig. 40B).

The reflective film REFC includes a layer REFC1, a layer REFC2, and a layer REFC3 (see fig. 41C). Further, the unit 103C includes a layer 112C, a layer 113C1, a layer 113C2, and a layer 111C.

Table 12 shows the detailed structure of the manufactured light emitting device C described in this embodiment. The structural formula of the material used for the light emitting device described in this embodiment is also shown below. Note that, for convenience, the subscript text and the superscript text in the table of the present embodiment become normal text. For example, both the subscript text in the abbreviation and the superscript text in the unit become normal text in the table. These descriptions in the tables can be converted into original descriptions by referring to the descriptions in the specification.

TABLE 12

[ chemical formula 5]

In this example, 11- [ (3 ' -dibenzothiophen-4-yl) biphenyl-3-yl ] phenanthro [9',10':4,5] furo [2,3-b ] pyrazine (abbreviated as 11 mDBtBPnfpr) and phosphorescent dopant (OCPG-006) to produce light-emitting device C.

Operating characteristics of light-emitting device C

The light emitting device C emits light ELC due to being supplied with power (refer to fig. 40C). The operating characteristics of the light emitting device C were measured at room temperature (refer to fig. 55 to 60). Note that the luminance, CIE chromaticity, and emission spectrum were measured using a spectroradiometer (SR-UL 1R manufactured by the topukang corporation).

As can be seen from this, the light emitting device C has good characteristics. For example, the light emitting device C may be driven at a low voltage. Further, red with high color purity can be displayed.

< comparison device 700-REF >

The manufactured comparison device 700-REF illustrated in the present embodiment is different from the display device 700-3 in that: the comparing means 700-REF comprises a comparing device B and a comparing device C instead of the light emitting device B and the light emitting device C, respectively. The differences will be described in detail, and the above description is applied to portions using the same method.

Structure of comparison device B

The comparison device B differs from the light emitting device B in the structure of the layer 104B. Specifically, in comparative device B, layer 104B comprises PCBIF and OCHD-003, wherein PCBIF: OCHD-003=1: 0.03 instead of PCBBiF: OCHD-003=1: 0.3 (weight ratio).

Structure of comparison device C

Further, the comparison device C is different from the light emitting device C in the structure of the layer 104C. Specifically, in comparative device C, layer 104C comprises PCBIF and OCHD-003, wherein PCBIF: OCHD-003=1: 0.03 instead of PCBBiF: OCHD-003=1: 0.3 (weight ratio).

< method for manufacturing display device 700-3 >

The display device 700-3 described in this embodiment is manufactured by using a method including the following steps.

In steps 1 to 2, a reflective film REFA, a reflective film REFB, a reflective film REFC, an electrode 551A, an electrode 551B, and an electrode 551C are formed (see fig. 61).

In addition, in steps 3 to 8, films to be the layer 104A and the cell 103A, respectively, are stacked (see fig. 62). Further, the 3 rd to 8 th steps are steps common among the manufacturing methods of the light emitting device a, the light emitting device B, and the light emitting device C.

In addition, in steps 9-1 to 9-4, the laminated film is micromachined into a predetermined shape using photolithography, and a film 529_1 is formed (see fig. 63). Further, the 9-1 th to 9-4 th steps are steps common among the manufacturing methods of the light emitting device a, the light emitting device B, and the light emitting device C.

In addition, in steps 10-1 to 10-3, a film 529_2 and an insulating film 529_3 are formed (see fig. 68).

In addition, in steps 11 to 13, the layer 105, the conductive film 552, and the layer CAP are formed over the cells 103A, 103B, and 103C (see fig. 69).

Method for manufacturing light-emitting device A

The light emitting device a described in this embodiment was manufactured by using a method including the following steps.

[ step 1 ]

In step 1, a reflective film REFA, a reflective film REFB, and a reflective film REFC are formed on the insulating film 521 (see fig. 61). Specifically, a film containing Ti and having a thickness of 50nm, a film containing Al and having a thickness of 70nm, and a film containing Ti and having a thickness of 6nm are laminated using a sputtering method, and processed into a predetermined shape using a photolithography method.

[ step 2 ]

In step 2, an electrode 551A is formed on the reflective film REFA, an electrode 551B is formed on the reflective film REFB, and an electrode 551C is formed on the reflective film REFC. Specifically, a conductive film is formed by a sputtering method using ITSO as a target, and the conductive film is processed into a prescribed shape using a photolithography method. Electrode 551B is adjacent to electrode 551A, and a gap 551AB is between electrode 551B and electrode 551A. In addition, the electrode 551A, the electrode 551B, and the electrode 551C each contain ITSO, and have a thickness of 10nm.

Next, the workpiece formed with the plurality of electrodes was washed with water, and the workpiece was put into the interior thereof and depressurized to 10 ^-4 In a vacuum vapor deposition apparatus of the order Pa, vacuum baking was performed at 170℃for 60 minutes in a heating chamber in the vacuum vapor deposition apparatus. Then, the mixture was cooled for about 30 minutes.

[ step 3 ]

In step 3, a film to be later the layer 104A is formed on the electrode 551A. Specifically, a material is co-evaporated by a resistance heating method. Further, layer 104A was described as PCBBiF: OCHD-003=1: 0.03 Comprises PCBiF and OCHD-003, and has a thickness of 10nm.

[ step 4 ]

In steps 4 to 7, a stacked film to be later referred to as a cell 103A is formed. First, in step 4, a film which will be the layer 112A1 later is formed on the film which will be the layer 104A later. Specifically, a material is deposited by a resistance heating method. Layer 112A1 comprises PCBBiF and has a thickness of 96nm.

[ step 5 ]

In step 5, a film which will be the layer 112A2 later is formed on the film which will be the layer 112A1 later. Specifically, a material is deposited by a resistance heating method. Layer 112A2 contains DBfBB1TP and has a thickness of 10nm.

[ step 6 ]

In step 6, a film which is later to be layer 111A is formed on the film which is later to be layer 112 A2. Specifically, a material is co-evaporated by a resistance heating method. Layer 111A was grown in the form of αN- βNPAnth:3, 10pca2nbf (IV) -02=1: 0.015 The composition (weight ratio) comprises alpha N-beta NPAnth and 3, 10PCA2Nbf (IV) -02, and the thickness is 25nm.

[ step 7 ]

In step 7, a film which will be the layer 113A1 later is formed on the film which will be the layer 111A later. Specifically, a material is deposited by a resistance heating method. Layer 113A1 comprises 2mPCCzPDBq and has a thickness of 20nm.

[ step 8 ]

In step 8, a film which will be the layer 113A2 later is formed on the film which will be the layer 113A1 later. Specifically, a material is deposited by a resistance heating method. Layer 113A2 comprises mpph 2P and has a thickness of 15nm.

[ step 9-1 ]

In step 9-1, a film which will be the film 529_1 is formed over the film which will be the layer 113 A2. The film to be the film 529_1 hereinafter includes a film containing aluminum oxide with a thickness of 30nm and a film containing tungsten with a thickness of 50 nm. Specifically, a workpiece formed to a film to be the layer 113A2 later is taken out from the vacuum vapor deposition apparatus, and the workpiece is placed in the ALD deposition apparatus, and a film containing aluminum oxide is formed by the ALD method. Next, a workpiece is taken out from the ALD deposition apparatus, placed in a sputtering apparatus, and a film containing tungsten is formed by a sputtering method.

[ step 9-2 ]

In step 9-2, a film which will be film 529_1 later is processed into a predetermined shape. Specifically, the workpiece is taken out from the sputtering apparatus, a resist RES is formed on a film which is to be the film 529_1 later, and unnecessary portions of the film including tungsten are etched by using the resist RES and an etching method, so that portions overlapping with the electrode 551A remain.

After the resist RES is removed, unnecessary portions of the film including aluminum oxide are etched by using a film including tungsten and an etching method, so that portions overlapping with the electrode 551A remain (see fig. 62).

[ Steps 9-3 ]

In step 9-3, the cell 103A and the layer 104A are formed (see fig. 63). Specifically, an unnecessary portion is etched so that a portion overlapping with the electrode 551A remains. The film which becomes the film 529_1 later is used as a hard mask. Further, a gas containing oxygen is used as the etching gas.

After the 9-1 th to 9-3 th steps are completed, as a work, the structures of the electrode 551A of the light emitting device a to the layer 113A2 are formed, and a film which will be the film 529_1 later is formed over the layer 113 A2. For example, a plurality of predetermined electrodes may be exposed. Note that a work piece having a structure of the electrode 551A of the light emitting device a to the layer 113A2 may be referred to as a semi-finished product.

In the case of continuing to manufacture the light emitting device a using the semi-finished product having the structure in which the electrodes 551A to 113A2 are formed, after the 9 th to 3 rd steps are ended, the process proceeds to the 9 th to 4 th steps.

In addition, in the case where the semi-finished product includes the exposed electrode 551B, the light emitting device B is manufactured on the electrode 551B. Also, in the case where the semi-finished product includes the exposed electrode 551C, the light emitting device C is manufactured on the electrode 551C. In this case, after the 9 th to 3 rd steps are completed, the work is put into the interior thereof and depressurized to 10 ^-4 In the vacuum vapor deposition apparatus around Pa, the process goes to step 3 to produce the light emitting device B or the light emitting device C.

[ Steps 9-4 ]

In steps 9 to 4, a film 529_1 is formed. Specifically, a film containing tungsten is removed from a film which is to be the film 529_1 later by a dry etching method, so that a film containing aluminum oxide remains, whereby the film 529_1 is formed.

[ step 10-1 ]

In step 10-1, an insulating film which will be a film 529_2 later is formed (see fig. 67). Specifically, an insulating film to be the film 529_2 later is formed by an ALD method so as to cover the top surface of the film 529_1 and the side surfaces of the cell 103A and the layer 104A. The film 529_2 contains alumina, and has a thickness of 10nm.

[ step 10-2 ]

In step 10-2, the insulating film 529_3 is formed into a predetermined shape. Specifically, by using a photosensitive resin, a portion between the electrode 551A and the electrode 551B is left, and a portion overlapping the electrode 551A and a portion overlapping the electrode 551B are removed. Further, a portion overlapping with the electrode 551C is removed.

[ step 10-3 ]

In step 10-3, the film 529_1 and the film 529_2 are formed into predetermined shapes (see fig. 68). Specifically, an opening portion is formed in the insulating film 529_1 and the insulating film which becomes the film 529_2 later with the insulating film 529_3 as a resist.

For example, a wet etching method may be used. Specifically, an aqueous solution containing hydrofluoric acid (HF) or an aqueous solution containing tetramethylammonium hydroxide (abbreviated as TMAH) may be used as the etching liquid. Thus, the cells 103A, 103B, and 103C are exposed in the opening. In other words, the layers 113A2, 113B2, and 113C2 are exposed.

Next, the work was put into the inside thereof and depressurized to 10 ^-4 In a vacuum vapor deposition apparatus of the order Pa, a vacuum baking was performed in a heating chamber in the vacuum vapor deposition apparatus at a temperature of 70℃for 90 minutes.

[ step 11 ]

In step 11, layer 105 is formed over layer 113 A2. Specifically, a material is co-evaporated by a resistance heating method. Layer 105 includes layer 105A, layer 105B, and layer 105C. In addition, layer 105 comprises a material of LiF: yb=1: 0.5 (volume ratio) contains LiF and Yb, and has a thickness of 1.5nm.

[ step 12 ]

In step 12, a conductive film 552 is formed over the layer 105. Specifically, a material is co-evaporated by a resistance heating method. The conductive film 552 includes an electrode 552A, an electrode 552B, and an electrode 552C. Further, the conductive film 552 is formed of Ag: mg=1: 0.1 (volume ratio) contains Ag and Mg, and has a thickness of 25nm.

[ step 13 ]

In step 13, a layer CAP is formed on the electrode 552A. Specifically, the layer CAP is formed by a sputtering method using ITO as a target. In addition, the layer CAP contains ITO and has a thickness of 70nm.

Method for manufacturing light-emitting device B

The light emitting device B described in this embodiment is manufactured by using a method including the following steps.

The manufacturing method of the light emitting device B is different from the manufacturing method of the light emitting device a in that: in step 3 of the manufacturing method of the light emitting device B, a semi-finished product of the light emitting device a is used as a work, and PCBBiF in a film containing PCBBiF and OCHD-003 is changed: the weight ratio of OCHD-003.

Specifically, the workpiece includes an electrode 551A and an electrode 551B, and a layer 104A, a cell 103A, and a film which later becomes a film 529_1 are formed over the electrode 551A. Further, the manufacturing method of the light emitting device B is different from the manufacturing method of the light emitting device a in that: in step 3, pclbif in a film comprising pclbif and OCHD-003: the weight ratio of OCHD-003 was changed to PCBIF: OCHD-003=1: 0.3; in step 4, the thickness of the film comprising PCBBiF was changed to 10nm; step 5 is omitted; in step 6, the material and thickness are changed; and in the 7 th step, the thickness of the film containing 2 mpczpdbq was changed to 10nm. Here, the differences will be described in detail, and the above description will be applied to the manufacturing method of the light emitting device B by converting the symbol "a" used in the description of the manufacturing method of the light emitting device a to "B" in the portions using the same method.

[ step 3 ]

In step 3, a film to be later the layer 104B is formed on the electrode 551B. Specifically, a material is co-evaporated by a resistance heating method. Further, layer 104B is in PCBBiF: OCHD-003=1: 0.3 Comprises PCBiF and OCHD-003, and has a thickness of 10nm.

[ step 4 ]

In steps 4 to 7, a stacked film to be later referred to as a cell 103B is formed. First, in step 4, a film which will be the layer 112B later is formed on the film which will be the layer 104B later. Specifically, a material is deposited by a resistance heating method. Layer 112B comprises PCBBiF and has a thickness of 10nm.

[ step 6 ]

In step 6, a film which is later to be layer 111B is formed on the film which is later to be layer 112B. Specifically, a material is co-evaporated by a resistance heating method. Layer 111B was prepared at 8mpTP-4mDBtPBfpm: beta NCCP: ir (5 mppy-d) ₃ ) ₂ (mbfpypy-d ₃ ) =0.6: 0.4:0.1 (weight ratio) comprising 8mpTP-4mDBtPBfpm, βNCCP and Ir (5 mppy-d) ₃ ) ₂ (mbfpypy-d ₃ ) And has a thickness of 40nm.

[ step 9-1 ]

In step 9-1, a film which will be the film 529_1 is formed over the film which will be the layer 113B 2. The film to be the film 529_1 hereinafter includes a film containing aluminum oxide with a thickness of 30nm and a film containing tungsten with a thickness of 50 nm. Specifically, a workpiece formed to a film to be the layer 113B2 later was taken out from the vacuum vapor deposition apparatus, and the workpiece was placed in the ALD deposition apparatus, and a film containing aluminum oxide was formed by the ALD method. Next, a workpiece is taken out from the ALD deposition apparatus, placed in a sputtering apparatus, and a film containing tungsten is formed by a sputtering method.

[ step 9-2 ]

In step 9-2, a film which will be film 529_1 later is processed into a predetermined shape. Specifically, the workpiece is taken out from the sputtering apparatus, a resist RES is formed on a film which is to be the film 529_1 later, and unnecessary portions of the film including tungsten are etched by using the resist RES and an etching method, so that portions overlapping with the electrode 551B remain.

After the resist RES is removed, unnecessary portions of the film including aluminum oxide are etched by using a film including tungsten and an etching method, so that portions overlapping with the electrode 551B remain (see fig. 64).

[ Steps 9-3 ]

In step 9-3, the cell 103B and the layer 104B are formed (see fig. 65). Specifically, an unnecessary portion is etched so that a portion overlapping with the electrode 551B remains. The film which becomes the film 529_1 later is used as a hard mask. Further, a gas containing oxygen is used as the etching gas.

After the 9-1 th to 9-3 th steps are completed, as a work, the structure of the electrode 551B of the light emitting device B to the layer 113B2 is formed, and a film which will be the film 529_1 later is formed over the layer 113B 2. For example, a plurality of predetermined electrodes may be exposed. Note that a work having a structure of the electrode 551B of the light emitting device B to the layer 113B2 formed may be referred to as a semifinished product.

In the case of continuing to manufacture the light emitting device B using the semi-finished product having the structure in which the electrode 551B to the layer 113B2 are formed, after the 9 th to 3 rd steps are ended, the process proceeds to the 9 th to 4 th steps.

In addition, in the case where the semi-finished product includes the exposed electrode 551C, the light emitting device C is manufactured on the electrode 551C. In this case, after the 9 th to 3 rd steps are completed, the work is put into the interior thereof and depressurized to 10 ^-4 In the vacuum vapor deposition apparatus around Pa, the process goes to step 3, and a light emitting device C is manufactured.

Method for manufacturing light-emitting device C

The light emitting device C described in this embodiment is manufactured by using a method including the following steps.

The manufacturing method of the light emitting device C is different from the manufacturing method of the light emitting device a in that: in step 3 of the manufacturing method of the light emitting device B, a semi-finished product of the light emitting device a and the light emitting device B is used as a work; pclbif in a film comprising pclbif and OCHD-003: the weight ratio of OCHD-003.

Specifically, the workpiece includes an electrode 551A, an electrode 551B, and an electrode 551C, a layer 104A, a cell 103A, and a film which later becomes a film 529_1 are formed over the electrode 551A, and a layer 104B, a cell 103B, and a film which later becomes a film 529_1 are formed over the electrode 551B. Further, the manufacturing method of the light emitting device C is different from the manufacturing method of the light emitting device a in that: in step 3, pclbif in a film comprising pclbif and OCHD-003: the weight ratio of OCHD-003 was changed to PCBIF: OCHD-003=1: 0.3; in step 4, the thickness of the film comprising PCBBiF was changed to 25nm; step 5 is omitted; in step 6, the material and thickness are changed; and in the 8 th step, the thickness of the film containing mpph en2P was changed to 20nm. Here, the differences will be described in detail, and the above description will be applied to the manufacturing method of the light emitting device C by converting the symbol "a" used in the description of the manufacturing method of the light emitting device a to "C" in the portions using the same method.

In step 3, a film to be later the layer 104C is formed on the electrode 551C. Specifically, a material is co-evaporated by a resistance heating method. Further, layer 104C is in PCBBiF: OCHD-003=1: 0.3 Comprises PCBiF and OCHD-003, and has a thickness of 10nm.

[ step 4 ]

In steps 4 to 7, a stacked film to be later referred to as a cell 103C is formed. First, in step 4, a film which will be the layer 112C later is formed on the film which will be the layer 104C later. Specifically, a material is deposited by a resistance heating method. Layer 112C comprises PCBBiF and has a thickness of 25nm.

[ step 6 ]

In step 6, a film which is later to be layer 111C is formed on the film which is later to be layer 112C. Specifically, a material is co-evaporated by a resistance heating method. Layer 111C was prepared at 11 mDBtBPNNfpr: PCBIF: OCPG-006=0.7: 0.3:0.05 (weight ratio) comprised 11mDBtBPPnfpr, PCBBiF and OCPG-006, and had a thickness of 40nm.

[ step 7 ]

In step 7, a film which will be the layer 113C2 later is formed on the film which will be the layer 113C1 later. Specifically, a material is deposited by a resistance heating method. Layer 113C2 comprises mpph 2P and has a thickness of 20nm.

[ step 9-1 ]

In step 9-1, a film which will be the film 529_1 is formed over the film which will be the layer 113C2 later. The film to be the film 529_1 hereinafter includes a film containing aluminum oxide with a thickness of 30nm and a film containing tungsten with a thickness of 50 nm. Specifically, a workpiece formed to a film to be the layer 113C2 later is taken out from the vacuum vapor deposition apparatus, and the workpiece is placed in the ALD deposition apparatus, and a film containing aluminum oxide is formed by the ALD method. Next, a workpiece is taken out from the ALD deposition apparatus, placed in a sputtering apparatus, and a film containing tungsten is formed by a sputtering method.

[ step 9-2 ]

In step 9-2, a film which will be film 529_1 later is processed into a predetermined shape. Specifically, the workpiece is taken out from the sputtering apparatus, a resist RES is formed on a film which is to be the film 529_1 later, and unnecessary portions of the film including tungsten are etched by using the resist RES and an etching method, so that portions overlapping with the electrode 551C remain.

After the resist RES is removed, an unnecessary portion of the film including aluminum oxide is etched by using a film including tungsten and an etching method, so that a portion overlapping with the electrode 551C remains.

[ Steps 9-3 ]

In step 9-3, cell 103C and layer 104C are formed (see fig. 66). Specifically, an unnecessary portion is etched so that a portion overlapping with the electrode 551C remains. The film which becomes the film 529_1 later is used as a hard mask. Further, a gas containing oxygen is used as the etching gas.

After the 9-1 th to 9-3 th steps are completed, as a work, the structure of the electrode 551C of the light emitting device C to the layer 113C2 is formed, and a film which becomes the film 529_1 later is formed over the layer 113C 2. Note that a work piece having a structure of the electrode 551C to the layer 113C2 of the light emitting device C formed may be referred to as a semi-finished product.

In the case of continuing to manufacture the light emitting device C using the semi-finished product having the structure in which the electrode 551C to the layer 113C2 are formed, after the 9 th to 3 rd steps are ended, the process proceeds to the 9 th to 4 th steps.

< method for manufacturing comparative device 700-REF >

The manufacturing method of the manufactured comparison device 700-REF described in the present embodiment is different from the manufacturing method of the display device 700-3 in that: in step 3 of the manufacturing process of comparative devices B and C, pclbif in the film containing pclbif and OCHD-003: the weight ratio of OCHD-003 is PCBIF: OCHD-003=1: 0.03. the above description is incorporated herein by reference in relation to the use of the same method.

(reference example)

In this reference example, a manufactured reference device is described with reference to fig. 70 to 78.

Fig. 70 is a diagram illustrating voltage-current density characteristics of the reference device a and the light emitting device a.

Fig. 71 is a graph illustrating current density-blue efficiency index characteristics of the reference device a and the light emitting device a.

FIG. 72 is a graph illustrating the flow rate of 50mA/cm ² A graph of normalized luminance over time when the reference device a and the light emitting device a emit light.

Fig. 73 is a diagram illustrating voltage-current density characteristics of the reference device B and the light emitting device B.

Fig. 74 is a diagram illustrating current density-current efficiency characteristics of the reference device B and the light emitting device B.

FIG. 75 is a graph illustrating the flow rate of 50mA/cm ² A graph of normalized luminance over time when the reference device B and the light emitting device B emit light.

Fig. 76 is a diagram illustrating voltage-current density characteristics of the reference device C and the light emitting device C.

Fig. 77 is a diagram illustrating current density-current efficiency characteristics of the reference device C and the light emitting device C.

FIG. 78 is a graph illustrating the flow rate of 50mA/cm ² A graph of normalized luminance over time when the reference device C and the light emitting device C emit light.

< reference device A >

The reference device a described in this reference example is different from the light emitting device a in that: the area of electrode 551A of reference device A is 4mm ² (2 mm. Times.2 mm); layer 104A of reference device a is continuous with layer 104A of another reference device adjacent thereto without a gap therebetween; and the cell 103A of the reference device a is continuous with the cell 103A of the adjacent other reference device without a gap therebetween.

Further, the manufacturing method of the reference device a is different from the manufacturing method of the light emitting device a in that: in the manufacturing method of the reference device a, after the end of the 8 th step, the process goes to the 11 th step. In other words, in the manufacturing process, the reference device a is always processed in a depressurized apparatus.

Reference device A operating characteristics

The reference device a emits light as a result of being powered. The operating characteristics of the reference device a were measured at room temperature (refer to fig. 70 to 72). Note that the luminance, CIE chromaticity, and emission spectrum were measured using a spectroradiometer (SR-UL 1R manufactured by the topukang corporation).

Table 13 shows that the reference device A is manufactured at a luminance of 1000cd/m ² The main initial characteristics when emitting light right and left. Further, table 13 also shows characteristics of other reference light emitting devices described later.

In addition, table 14 shows that the current density was constant (50 mA/cm ² ) The reference device a is made to emit light and then the luminance is reduced to 90% of the initial luminance by the elapsed time LT90. In addition, table 14 also shows characteristics of other reference devices described later.

TABLE 13

TABLE 14

From this, it is seen that the light emitting device a has good characteristics compared with the reference device a.

< reference device B >

The reference device B described in this reference example is different from the light emitting device B in that: electrode 551B of reference device B has an area of 4mm ² (2 mm. Times.2 mm); reference device B layer 104B is denoted PCBBiF: OCHD-003=1: 0.03 (weight ratio) comprises PCBIF and OCHD-003; layer 104B of reference device B is continuous with layer 104B of another adjacent reference device without gaps therebetween; and the cell 103B of the reference device B is continuous with the cell 103B of the adjacent other reference device without a gap therebetween.

Further, the manufacturing method of the reference device B is different from the manufacturing method of the light emitting device B in that: in the method of manufacturing the reference device B, in step 3, PCBBiF: OCHD-003=1: 0.03 The weight ratio is PCBIF and OCHD-003; in the method of manufacturing the reference device B, after the end of the 8 th step, the process proceeds to the 11 th step. In other words, in the manufacturing process, the reference device B is always processed in the depressurized apparatus.

Reference device B operating characteristics-

The reference device B emits light as a result of being supplied with power. The operation characteristics of the reference device B were measured at room temperature (refer to fig. 73 to 75).

Table 13 shows that the reference device B is manufactured at a luminance of 1000cd/m ² The main initial characteristics when emitting light right and left. In addition, table 14 shows that the current density was constant (50 mA/cm ² ) The reference device B is made to emit light and then the luminance is reduced to 90% of the initial luminance by the elapsed time LT90.

From this, it is seen that the light emitting device B has good characteristics compared with the reference device B.

< reference device C >

Further, the reference device C described in this reference example is different from the light emitting device C in that: electrode 551C of reference device C has an area of 4mm ² (2 mm. Times.2 mm); reference device C layer 104C was made to PCBBiF: OCHD-003=1: 0.03 (weight ratio) comprises PCBIF and OCHD-003; layer 104C of reference device C is continuous with layer 104C of another adjacent reference device without gaps therebetween; and the cell 103C of the reference device C is continuous with the cell 103C of the adjacent other reference device without a gap therebetween.

Further, the manufacturing method of the reference device C is different from the manufacturing method of the light emitting device C in that: in the method of manufacturing the reference device C, in step 3, PCBBiF: OCHD-003=1: 0.03 The weight ratio is PCBIF and OCHD-003; in the method of manufacturing the reference device C, after the end of the 8 th step, the process goes to the 11 th step. In other words, in the manufacturing process, the reference device C is always processed in the depressurized apparatus.

Reference device C operating characteristics-

The reference device C emits light as a result of being supplied with power. The operation characteristics of the reference device C were measured at room temperature (refer to fig. 76 to 78).

Table 13 shows that the reference device C is manufactured at a luminance of 1000cd/m ² The main initial characteristics when emitting light right and left. In addition, table 14 shows that the current density was constant (50 mA/cm ² ) The reference device C is made to emit light and then the luminance is reduced to 90% of the initial luminance by the elapsed time LT90.

From this, it can be seen that the light emitting device C has good characteristics compared with the reference device C.

Example 5

In this embodiment, characteristics of the manufactured display device 700-3 according to one embodiment of the present invention are described in addition to table 15.

When the manufactured display device was used, the display device was manufactured at 5000cd/m ² White D65. The current efficiency of the display device at this time was 23.3cd/A.

In table 15, R column shows the current efficiency and chromaticity of the light emitting device of the red pixel, G column shows the current efficiency and chromaticity of the light emitting device of the green pixel, and B column shows the current efficiency and chromaticity of the light emitting device of the blue pixel. For DCI-P3 specifications applied to digital cinema, the coverage of the manufactured display device was 98%.

TABLE 15

Reference example 2

In this reference example, a manufactured reference device is described with reference to fig. 79 and 80.

Fig. 79 is a graph illustrating voltage-current density characteristics of reference device D to reference device F.

Fig. 80 is a diagram illustrating current density-current efficiency characteristics of reference device D to reference device F.

< structure of reference device D >

Structure of reference device D

The light emitting device D includes a reflective film REFB, an electrode 551B, an electrode 552B, a cell 103B, a layer 104B, a layer 105B, and a layer CAP (see fig. 40C). Further, the shape of the light emitting device D was a square with a side length of 2 mm.

Table 16 shows the detailed structure of the manufactured light emitting device D described in this embodiment. Note that, for convenience, the subscript text and the superscript text in the table of the present embodiment become normal text. For example, both the subscript text in the abbreviation and the superscript text in the unit become normal text in the table. These descriptions in the tables can be converted into original descriptions by referring to the descriptions in the specification.

TABLE 16

Reference device D manufacturing method-

The reference device D described in this embodiment is manufactured by using a method including the following steps.

[ step 1 ]

In step 1, a reflective film REFB is formed on the insulating film 521. Specifically, a film containing Ti and having a thickness of 50nm, a film containing Al and having a thickness of 70nm, and a film containing Ti and having a thickness of 6nm are laminated using a sputtering method, and processed into a predetermined shape using a photolithography method.

[ step 2 ]

In step 2, an electrode 551B is formed on the reflective film REFB. Specifically, a conductive film is formed by a sputtering method using ITSO as a target, and the conductive film is processed into a prescribed shape using a photolithography method. In addition, electrode 551B contains ITSO and has a thickness of 10nm.

Next, the workpiece with the electrode formed was washed with water, and the workpiece was put into the inside thereof and depressurized to 10 ^-4 In a vacuum vapor deposition apparatus of the order Pa, the vacuum vapor deposition is performed at a temperature of 170 ℃ in a heating chamber in the vacuum vapor deposition apparatusVacuum baking for 60 minutes. Then, the mixture was cooled for about 30 minutes.

[ step 3 ]

[ step 4 ]

[ step 6 ]

In step 6, a film which will be the layer 111B later is formed on the film which will be the layer 112B later. Specifically, a material is co-evaporated by a resistance heating method. Layer 111B was prepared at 8mpTP-4mDBtPBfpm: beta NCCP: ir (5 mppy-d) ₃ ) ₂ (mbfpypy-d ₃ ) =0.6: 0.4:0.1 (weight ratio) comprising 8mpTP-4mDBtPBfpm, βNCCP and Ir (5 mppy-d) ₃ ) ₂ (mbfpypy-d ₃ ) And has a thickness of 40nm.

[ step 11 ]

In step 11, layer 105B is formed over layer 113B 2. Specifically, a material is co-evaporated by a resistance heating method. In addition, layer 105B comprises a material of LiF: yb=1: 0.5 (volume ratio) contains LiF and Yb, and has a thickness of 1.5nm.

[ step 12 ]

In step 12, a conductive film 552 is formed over the layer 105B. Specifically, a material is co-evaporated by a resistance heating method. The conductive film 552 includes an electrode 552B. Further, the conductive film 552 is formed of Ag: mg=1: 0.1 (volume ratio) contains Ag and Mg, and has a thickness of 25nm.

[ step 13 ]

In step 13, a layer CAP is formed on the electrode 552B. Specifically, the layer CAP is formed by a sputtering method using ITO as a target. In addition, the layer CAP contains ITO and has a thickness of 70nm.

Reference device D operating characteristics-

The reference device D emits light as a result of being supplied with power. The operating characteristics of the reference device D were measured at room temperature (see fig. 79, 80).

< reference device E >

Structure of reference device E

The reference device E described in this reference example is different from the reference device D in that: in the reference device E, assuming that there are 251×251 electrodes in a square having a side length of 2mm, a total of 63001 electrodes 551B are arranged in a stripe arrangement in a matrix form to form the electrodes 551B. Accordingly, the detailed structure of the reference device E is the same as that of the reference device D shown in table 16. The area where the electrode 551B was exposed (i.e., light emitting area) in the opening was about 3.24 μm×about 2.95 μm, and this shape and arrangement corresponded to a pixel density of 3207ppi, and the aperture ratio was 15.1%. That is, the reference device E can be said to be a device in which 251×251 light emitting devices having the same structure are formed in a square having a side length of 2mm, and a total of 63001 light emitting devices having the same structure are formed. In the reference device E, the layer 104B of one light emitting device is continuous with the layer 104B of the adjacent other light emitting device without a gap therebetween. Likewise, the cell 103B of one light emitting device is continuous with the cell 103B of the adjacent other light emitting device without a gap therebetween.

Reference device E manufacturing method-

The manufacturing method of the reference device E is different from that of the reference device D in that: in the manufacturing method of the reference device E, in the 2 nd step of the manufacturing method of the reference device D, the electrode 551B is divided into 251×251, and a total of 63001 electrodes 551B; and forming an inorganic insulating film on the electrode 551B, the insulating film being processed using a photolithography method, thereby forming a plurality of opening portions overlapping each of the divided electrodes 551B. Accordingly, the detailed structure of the reference device E is the same as that of the reference device D shown in table 16.

Reference device E operating characteristics-

The reference device E emits light as a result of being supplied with power. The operating characteristics of the reference device E were measured at room temperature (see fig. 79, 80).

< reference device F >

Structure of reference device F

Reference device F differs from reference device D in that: in reference device F, assuming that there are 251×251 electrodes in a square having a side length of 2mm, a total of 63001 electrodes 551B are arranged in a stripe arrangement in a matrix form to form electrodes 551B. This shape and arrangement corresponds to a pixel density of 3207ppi, and the aperture ratio is 16.1%. That is, the reference device F can be said to be a device in which 251×251 light emitting devices having the same structure are formed in a square having a side length of 2mm, and a total of 63001 light emitting devices having the same structure are formed. In the reference device F, the layer 104B of one light emitting device is separated from the layer 104B of the adjacent other light emitting device with a gap therebetween. Similarly, the cell 103B of one light emitting device is separated from the cell 103B of the other adjacent light emitting device with a gap therebetween.

Reference device F manufacturing method

The manufacturing method of the reference device F is different from that of the reference device D in that: in the manufacturing method of the reference device F, in the 2 nd step of the manufacturing method of the reference device D, the electrode 551B is divided into 251×251, and a total of 63001 electrodes 551B; forming an inorganic insulating film on the electrode 551B, and processing the insulating film using a photolithography method, thereby forming a plurality of openings overlapping each of the divided electrodes 551B; and processing the layer 104B and the cell 103B into an island shape so as to correspond to the divided electrode 551B by performing the 7 th to 10 th steps between the 6 th and 11 th steps. Steps 7 to 10 are shown below.

[ step 7 ]

In step 7, a film which is later to be the layer 113B1 is formed on the film which is later to be the layer 111B. Specifically, a material is deposited by a resistance heating method. Layer 113B1 comprises 2mPCCzPDBq and has a thickness of 10nm.

[ step 8 ]

In step 8, a film which will be the layer 113B2 later is formed on the film which will be the layer 113B1 later. Specifically, a material is deposited by a resistance heating method. Layer 113B2 comprises mpph 2P and has a thickness of 15nm.

[ step 9-1 ]

[ step 9-2 ]

After the resist RES is removed, unnecessary portions of the film including aluminum oxide are etched by using the film including tungsten and an etching method so that portions overlapping each of the divided electrodes 551B remain.

[ Steps 9-3 ]

In step 9-3, cell 103B and layer 104B are formed. Specifically, an etching process is performed on unnecessary portions so that island-like portions overlapping each of the divided electrodes 551B remain. The film which becomes the film 529_1 later is used as a hard mask. Further, a gas containing oxygen is used as the etching gas. By performing this processing, the cell 103B and the layer 104B formed so as to correspond to each of the divided electrodes 551B are formed independently from each of the divided electrodes. That is, there is a gap between the cell 103B and the layer 104B of the light emitting device (light emitting device F1) including one of the divided electrodes 551B and the cell 103B and the layer 104B of the light emitting device including one of the divided electrodes 551B and adjacent to the light emitting device F1.

After the 9-1 th to 9-3 th steps are completed, as a work, the structure of the electrode 551B of the light emitting device to the layer 113B2 is formed, and a film which will be the film 529_1 later is formed over the layer 113B 2.

[ Steps 9-4 ]

[ step 10-1 ]

In step 10-1, an insulating film which will be the film 529_2 later is formed. Specifically, an insulating film to be the film 529_2 later is formed by an ALD method so as to cover the top surface of the film 529_1 and the side surfaces of the cell 103B and the layer 104B. The film 529_2 contains alumina, and has a thickness of 10nm.

[ step 10-2 ]

In step 10-2, the insulating film 529_3 is formed into a predetermined shape. Specifically, by using a photosensitive resin, a portion between each of the divided electrodes 551B is left, and a portion overlapping each of the divided electrodes 551B is removed

[ step 10-3 ]

In step 10-3, the film 529_1 and the film 529_2 are formed into predetermined shapes. Specifically, an opening portion is formed in the insulating film 529_1 and the insulating film which becomes the film 529_2 later with the insulating film 529_3 as a resist.

For example, a wet etching method may be used. Specifically, an aqueous solution containing hydrofluoric acid (HF) or an aqueous solution containing tetramethylammonium hydroxide (abbreviated as TMAH) may be used as the etching liquid. Thereby, the unit 103B is exposed in the opening. In other words, the layer 113B2 is exposed.

Next, the work was put into the inside thereof and depressurized to 10 ^-4 In a vacuum vapor deposition apparatus of the order Pa, a vacuum baking is performed for 90 minutes at a temperature of 90 ℃ in a heating chamber in the vacuum vapor deposition apparatus.

Reference device F operating characteristics

The reference device F emits light as a result of being supplied with power. The operating characteristics of the reference device F were measured at room temperature (see fig. 79, 80).

As is clear from fig. 79, the reference device F has the same good characteristics as the reference device D, but the reference device E generates a leakage current, and the current efficiency is also low. This is because of the following: the light emitting device of the reference device E is configured with high definition equivalent to 3207ppi, thereby generating leakage current through the hole injection layer or the like having low resistance, which results in light emission in a region other than a preset light emitting region, for example, between adjacent light emitting devices.

On the other hand, the reference device F is arranged with high definition equivalent to 3207ppi as in the reference device E, but as described above, the cell 103B and the layer 104B are separated from the cell 103B and the layer 104B of the adjacent light-emitting device with a gap therebetween, thereby suppressing generation of leakage current, and the reference device F has good characteristics similar to the reference device D.

Claims

1. A display device, comprising:

a first light emitting device, the first light emitting device comprising:

a first electrode;

a first layer;

a first unit; and

a second electrode; and

a second light emitting device comprising:

a third electrode;

a second layer;

a second unit; and

a fourth electrode, which is provided with a third electrode,

wherein the first unit is located between the first electrode and the second electrode,

the first unit comprises a first luminescent material,

the first layer is located between the first cell and the first electrode,

the first layer is in contact with the first electrode,

the first layer uses a material in a film state in which a first spin density is observed by an Electron Spin Resonance (ESR) device,

the third electrode is adjacent to the first electrode,

a first gap is formed between the third electrode and the first electrode,

the second cell is located between the third electrode and the fourth electrode,

the second cell comprises a second luminescent material,

the second layer is located between the second cell and the third electrode,

the second layer is in contact with the third electrode,

the second layer uses a material in a film state in which a second spin density is observed by an Electron Spin Resonance (ESR) device,

And, the second spin density is higher than the first spin density.

2. A display device, comprising:

a first light emitting device, the first light emitting device comprising:

a first electrode;

a first layer;

a first unit; and

a second electrode; and

a second light emitting device comprising:

a third electrode;

a second layer;

a second unit; and

a fourth electrode, which is provided with a third electrode,

wherein the first cell is located between the first electrode and the second electrode, the first cell comprising a first luminescent material,

the first layer is located between the first cell and the first electrode,

the first layer is in contact with the first electrode,

the first layer comprises an electron accepting material in a first weight percent,

the third electrode is adjacent to the first electrode,

a first gap is formed between the third electrode and the first electrode,

the second cell comprises a second luminescent material,

the second layer is located between the second cell and the third electrode,

the second layer is in contact with the third electrode,

the second layer comprises an electron accepting material in a second weight percent,

And, the second weight percent is higher than the first weight percent.

3. The display device according to claim 2,

wherein a second gap is provided between the second layer and the first layer,

and the second gap overlaps the first gap.

4. The display device according to claim 3, further comprising:

a first insulating film;

a conductive film; and

a second insulating film is formed on the first insulating film,

wherein the first insulating film overlaps the conductive film,

the first electrode and the third electrode are sandwiched between the first insulating film and the conductive film,

the conductive film includes the second electrode and the fourth electrode,

the second insulating film is located between the conductive film and the first insulating film, the second insulating film overlaps the first gap,

the second insulating film fills the second gap,

the second insulating film includes a first opening portion and a second opening portion,

the first opening overlaps the first electrode,

and the second opening portion overlaps the third electrode.

5. A display device according to claim 3,

wherein the maximum peak of the emission spectrum of the first luminescent material is in the range of 380nm or more and 480nm or less,

And the maximum peak of the emission spectrum of the second luminescent material is in a range of 500nm or more and 550nm or less.

6. The display device according to claim 5,

wherein the first luminescent material is a fluorescent substance,

and the second luminescent material is a phosphorescent substance.

7. A display module, comprising:

the display device of claim 1; and

at least one of the connector and the integrated circuit.

8. An electronic device, comprising:

the display device of claim 1; and

at least one of a battery, a camera, a speaker, and a microphone.

9. A display module, comprising:

the display device of claim 2; and

at least one of the connector and the integrated circuit.

10. An electronic device, comprising:

the display device of claim 2; and

at least one of a battery, a camera, a speaker, and a microphone.