CN117641957A - Bottom passivation method of perovskite film - Google Patents
Bottom passivation method of perovskite film Download PDFInfo
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- CN117641957A CN117641957A CN202311479703.2A CN202311479703A CN117641957A CN 117641957 A CN117641957 A CN 117641957A CN 202311479703 A CN202311479703 A CN 202311479703A CN 117641957 A CN117641957 A CN 117641957A
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- 238000000034 method Methods 0.000 title abstract description 17
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- 238000002360 preparation method Methods 0.000 claims abstract description 9
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- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 22
- WKNMKGVLOWGGOU-UHFFFAOYSA-N 2-aminoacetamide;hydron;chloride Chemical compound Cl.NCC(N)=O WKNMKGVLOWGGOU-UHFFFAOYSA-N 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 239000000243 solution Substances 0.000 claims description 17
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- 230000031700 light absorption Effects 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000010345 tape casting Methods 0.000 claims description 8
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 claims description 6
- YMAWOPBAYDPSLA-UHFFFAOYSA-N glycylglycine Chemical compound [NH3+]CC(=O)NCC([O-])=O YMAWOPBAYDPSLA-UHFFFAOYSA-N 0.000 claims description 4
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- -1 cesium ions Chemical class 0.000 claims description 3
- 229910001432 tin ion Inorganic materials 0.000 claims description 3
- DBEDTBJGEXDPBT-UHFFFAOYSA-N 1-amino-4-hydroxy-3,3-bis(hydroxymethyl)butane-1-sulfonic acid Chemical compound OS(=O)(=O)C(N)CC(CO)(CO)CO DBEDTBJGEXDPBT-UHFFFAOYSA-N 0.000 claims description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 108010008488 Glycylglycine Proteins 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 claims description 2
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- 238000004528 spin coating Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 9
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- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
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- 239000011261 inert gas Substances 0.000 description 6
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- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 description 6
- 229960002799 stannous fluoride Drugs 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
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- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
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- 229940006460 bromide ion Drugs 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
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- 125000000524 functional group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical group [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- 229940006461 iodide ion Drugs 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical group [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 1
- 238000001685 time-resolved fluorescence spectroscopy Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a bottom passivation method of a perovskite film. The passivation method is that a perovskite film is prepared after adding an autodeposition passivating agent into a perovskite precursor solution, wherein the autodeposition passivating agent is Good's buffering agent containing sulfamic acid or Good's buffering agent containing aminocarboxylic acid. According to the invention, the self-sinking bottom passivating agent is introduced into the perovskite precursor solution, so that the defects of the perovskite film are effectively passivated, and the quality of the perovskite bottom interface and the photoelectric conversion efficiency of the perovskite solar cell are improved; meanwhile, a passivation step of pretreatment is not needed, so that the passivation effect is ensured, the process flow of device preparation is shortened, and the preparation production speed of the solar cell is improved.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a bottom passivation method of a perovskite film.
Background
Since 2009, perovskite solar cells exhibit a number of unique advantages, such as high light absorption coefficient, long carrier lifetime, adjustable band gap, simple processing technology, low manufacturing cost, and the like. Through recent development, the photoelectric conversion efficiency of a single cell can reach 26.1%, and the efficiency of a perovskite-perovskite double-cell stack can reach 29%.
However, there are still many defects in perovskite solar cells, and because perovskite is a layered structure, defects are easily generated in both the upper and lower layers of the perovskite thin film and in the perovskite, and the perovskite is easily influenced by external environment, thus degrading the device performance. There have been many efforts to improve the upper surface of perovskite by post-treatment passivation modifications, such as by the introduction of bulk additives to passivate defects within perovskite films. However, the passivation modification means of the bottom interface (lower interface) of the photoelectric device is still in a development stage, and perovskite bottom interface modification materials deposited on the substrate in advance are easily damaged by the deposition process of a subsequent perovskite film, so that further research and solution are needed.
Therefore, developing a convenient and efficient bottom interface passivation process is necessary to improve the efficiency of perovskite cells.
Disclosure of Invention
Aiming at the problem that the passivation of the bottom interface of the perovskite film is difficult to realize, the invention provides a bottom passivation method of the perovskite film.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the perovskite film is prepared by adding an autodeposition passivating agent into a perovskite precursor solution, wherein the autodeposition passivating agent is Good's buffer containing sulfamic acid or Good's buffer containing aminocarboxylic acid.
Further, the Good's buffer containing sulfamic acid is tris (hydroxymethyl) aminopropanesulfonic acid or N-carbamoylmethyl ethane sulfonic acid, and the Good's buffer containing aminocarboxylic acid is glycinamide hydrochloride or glycylglycine.
Further, the perovskite precursor is ABX 3 A structure wherein a is cesium ion (Cs + ) Formamidino (FA) + ) Methylamino (MA) + ) Any one, two or three of the above materials are mixed in any proportion; b is lead ion (Pb) 2+ ) Tin ion (Sn) 2+ ) One or two of the above materials are mixed in any proportion; x is iodide ion (I) - ) Bromide ion (Br) - ) Chloride ion (Cl) - ) Any one, two or three of them are mixed in any ratio.
Further, the dosage of the self-sinking bottom passivating agent is 0.01% -10% of the molar quantity of B-site ions in the perovskite material.
Further, the dosage of the self-sinking bottom passivating agent is 0.5% -3% of the molar quantity of B-site ions in the perovskite material.
The invention selects some specific molecules from Good's buffering agent as passivating agent to enter perovskite precursor solution. Because Good's buffer has the characteristics of pKa value between 6 and 8, high solubility, stable chemical property, small light absorption in the ultraviolet-visible wavelength range, and the like, the buffer is suitable for being used as a perovskite film passivating agent. The molecules with passivation effect are selected from Good's buffer, and added into perovskite precursor solution, so that the molecules can interact with solvent to enable the molecules to have higher solubility in the perovskite solution. Good's buffers differ in functional groups that interact with solvents or solutes with a strength of interaction that is less than the interaction with solvents. Meanwhile, passivation molecules selected from Good's buffering agents can move from top to bottom along with volatilization of a solvent and crystallization of upper perovskite in a top-down crystallization process of the perovskite film, spontaneously deposit on the bottom of the perovskite film, and complete passivation of a bottom interface while preparing the perovskite film, so that a process flow is simplified; the bottom passivation layer pretreated on the substrate is prevented from being dissolved and washed away in the process of depositing the perovskite layer; the defect density of the perovskite bottom interface is reduced, so that a preparation method of the perovskite thin film device with higher efficiency is obtained. In the present invention, good's buffer containing sulfamic acid or Good's buffer containing aminocarboxylic acid is preferably selected as the passivating agent.
In the invention, oxygen atoms containing lone pair electrons in the self-precipitation bottom passivating agent can form a complex with lead ions and tin ions in inorganic salt, so as to promote the dissolution of the passivating agent in solution; meanwhile, the passivating agent can generate hydrogen bond action with an organic salt component and a solvent, so that the passivating agent can generate stronger interaction with a perovskite component and has high solubility. Meanwhile, the autodeposition bottom passivating agent is also provided with a positive electricity center group and a negative electricity center group, so that perovskite defects can be passivated, and the quality of the film is improved; meanwhile, the steric hindrance of the passivating agent is small, so that the passivating agent can fill the A position. For example, aminoacetyl cations in glycinamide hydrochloride can fill up vacancies in perovskite a sites, thereby passivating perovskite defects.
In one embodiment of the invention, glycinamide hydrochloride is selected as the dopant in the perovskite precursor solution. The structural formula of glycinamide hydrochloride is shown as follows:
。
the perovskite thin film is applied to perovskite solar cells.
The perovskite film can adopt at least one of spin coating, knife coating, slit coating and spray coating to deposit the perovskite precursor solution on the substrate to form the perovskite light absorption layer. The substrate may be an ITO, FTO or other transparent conductive glass substrate.
The perovskite solar cell may be a formal or trans perovskite cell.
Compared with the prior art, the self-sinking bottom passivating agent is introduced into the perovskite precursor solution, so that the defects of the perovskite film are effectively passivated, and the quality of the perovskite bottom interface and the photoelectric conversion efficiency of the perovskite solar cell are improved; meanwhile, a passivation step of pretreatment is not needed, so that the passivation effect is ensured, the process flow of device preparation is shortened, and the preparation production speed of the solar cell is improved.
Drawings
FIG. 1 is a time-of-flight secondary ion mass spectrum of the elemental distribution in the perovskite thin film prepared after adding glycinamide hydrochloride in example 1.
FIG. 2 is a fluorescence spectrum characterization of lead-tin blended perovskite thin film prepared before and after adding glycinamide hydrochloride in example 1, tested from top and bottom interfaces of the perovskite thin film, respectively.
FIG. 3 is a time resolved fluorescence spectrum characterization of lead-tin blended perovskite thin films prepared before and after addition of glycinamide hydrochloride in example 1, tested from top and bottom interfaces of the perovskite thin films, respectively.
Fig. 4 is a structural diagram of a lead-tin-blended perovskite solar cell in example 2.
Fig. 5 is a graph comparing current density versus voltage curves for lead-tin blended perovskite solar cells before and after addition of glycinamide hydrochloride in example 2.
Description of the embodiments
Preferred embodiments of the present invention will be described in detail below with reference to examples. It is to be understood that the following examples are given for illustrative purposes only and are not intended to limit the scope of the present invention. Various modifications and alterations of this invention may be made by those skilled in the art without departing from the spirit and scope of this invention.
The experimental methods used in the following examples are conventional methods unless otherwise specified.
Materials, reagents and the like used in the examples described below are commercially available unless otherwise specified.
Example 1
This example prepares a lead-tin blended perovskite thin film to which glycinamide hydrochloride (AAHCl) was added and examined for passivation effect from the bottom.
The preparation method of the perovskite thin film comprises the following steps:
(1) And scrubbing the transparent glass substrate by using deionized water mixed with the ITO cleaning solution, and then carrying out ultrasonic treatment on the transparent glass substrate by using deionized water, acetone, isopropanol and the like for 30 minutes to obtain the clean transparent glass substrate.
(2) N for cleaning transparent glass substrate 2 Blowing clean by air gun and pre-treating with ultraviolet ozone for 15-20min.
(3) The transparent glass substrate pretreated with ultraviolet ozone is stored in a glove box with an inert gas such as nitrogen or argon.
(4) MA was weighed in a glove box with an inert gas such as nitrogen or argon at a molar ratio 0.3 FA 0.7 Pb 0.5 Sn 0.5 I 3 Is added with Pb 2+ 、Sn 2+ 2% glycinamide hydrochloride and 5% stannous fluoride (SnF) in a molar ratio of 2% of the sum of the molar amounts 2 ) The weighed medicine is dissolved in a mixed solution of DMF and DMSO, the volume ratio of DMF to DMSO is 9:1, and the mixture is stirred for 2 hours to prepare a lead-tin blending perovskite precursor solution with the concentration of 2.4 and M.
(5) Preparing lead-tin mixed perovskite film containing glycinamide hydrochloride by adopting a knife coating method in a glove box, volatilizing an air knife auxiliary solvent, wherein the knife coating speed is 5 mm/s, the air knife air pressure is 0.3 MPa, the film thickness is about 1000 nm, and the film thickness is 100 o C, annealing on a hot plate for 7 min to obtain the perovskite light absorption layer after crystallization.
Meanwhile, lead-tin-blended perovskite thin film is prepared by using lead-tin-blended perovskite precursor solution without adding glycinamide hydrochloride as a control.
The bottom passivation effect of glycinamide hydrochloride on perovskite was characterized by time-of-flight secondary ion mass spectrometry, fluorescence spectroscopy and time-resolved fluorescence spectroscopy tests.
From the time-of-flight secondary ion mass spectrum of fig. 1, glycinamide hydrochloride is mainly deposited at the bottom of the perovskite thin film. Meanwhile, as can be seen from the fluorescence spectrum of fig. 2 and the time-resolved fluorescence spectrum of fig. 3, the defect concentration at the bottom of the perovskite film is greatly reduced by glycinamide hydrochloride, and the carrier life of the perovskite film is prolonged.
Example 2
As shown in fig. 4, the solar cell structure of the present embodiment includes Indium Tin Oxide (ITO) conductive glassGlass substrate, polyethylene dioxythiophene (PEDOT: PSS) hole transport layer, perovskite light absorption layer containing passivating agent, fullerene (C) 60 ) 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline (BCP) electron transport layer and metallic copper Cu electrode.
In this example, a lead-tin-blended perovskite solar cell was prepared according to the deposition method of the perovskite thin film in example 1, and the specific preparation process is as follows:
(1) The ITO conductive substrate was scrubbed with deionized water and then sonicated with deionized water, acetone, isopropanol for 30 min each.
(2) N is used for cleaning ITO transparent conductive substrate 2 Blowing clean by air gun and pre-treating with ultraviolet ozone for 15-20min.
(3) A40-50 nm PEDOT: PSS layer is prepared as a hole transport layer on an ITO transparent conductive substrate pretreated with ultraviolet ozone. Annealing was performed on a hot plate at 150℃for 20min. The substrate on which the transfer layer is formed is stored in a glove box of an inert gas such as nitrogen or argon.
(4) MA was weighed in a glove box with an inert gas such as nitrogen or argon at a molar ratio 0.3 FA 0.7 Pb 0.5 Sn 0.5 I 3 Is added with Pb 2+ 、Sn 2+ 2% glycinamide hydrochloride and 5% stannous fluoride (SnF) in a molar ratio of 2% of the sum of the molar amounts 2 ) The weighed medicine is dissolved in a mixed solution of N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), the volume ratio of DMF to DMSO is 9:1, and the mixture is stirred for 2 hours to prepare a lead-tin blending perovskite precursor solution with the concentration of 2.4M.
(5) Preparing lead-tin mixed perovskite film containing glycinamide hydrochloride by adopting a knife coating method in a glove box, volatilizing an air knife auxiliary solvent, wherein the knife coating speed is 5 mm/s, the air knife air pressure is 0.3 MPa, the film thickness is about 1000 nm, and the film thickness is 100 o C, annealing on a hot plate for 7 min to obtain the perovskite light absorption layer after crystallization.
(6) In a glove box, C with the thickness of 20 nm is evaporated on the perovskite light absorption layer obtained and obtained in a high vacuum environment by utilizing a thermal evaporation method 60 Thereafter evaporating 7 to 7 nmThe thick BCP was finally reheat evaporated with a layer of 150 a nm copper as the metal electrode.
(7) And in a nitrogen glove box, testing and packaging the prepared lead-tin blended perovskite solar cell.
Comparative example 1
This example differs from example 2 in that no glycinamide hydrochloride was added to the precursor solution of the perovskite light absorbing layer.
The preparation process comprises the following steps:
(1) The ITO conductive substrate was scrubbed with deionized water and then sonicated with deionized water, acetone, isopropanol for 30 min each.
(2) N is used for cleaning ITO transparent conductive substrate 2 Blowing clean by air gun and pre-treating with ultraviolet ozone for 15-20min.
(3) A40-50 nm PEDOT: PSS layer is prepared as a hole transport layer on an ITO transparent conductive substrate pretreated with ultraviolet ozone. Annealing was performed on a hot plate at 150℃for 20min. The substrate on which the transfer layer is formed is stored in a glove box of an inert gas such as nitrogen or argon.
(4) MA was weighed in a glove box with an inert gas such as nitrogen or argon at a molar ratio 0.3 FA 0.7 Pb 0.5 Sn 0.5 I 3 Is added with Pb 2+ 、Sn 2+ Stannous fluoride (SnF) in a molar ratio of 5% of the sum of the molar amounts 2 ) The weighed medicine is dissolved in a mixed solution of N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), the volume ratio of DMF to DMSO is 9:1, and the mixture is stirred for 2 hours to prepare a lead-tin blending perovskite precursor solution with the concentration of 2.4M.
(5) In a glove box, preparing a lead-tin blended perovskite film by adopting a knife coating method, volatilizing an air knife auxiliary solvent, wherein the knife coating speed is 5 mm/s, the air knife air pressure is 0.3 MPa, the film thickness is about 1000 nm, and the film thickness is 100 o C, annealing on a hot plate for 7 min to obtain the perovskite light absorption layer after crystallization.
(6) In a glove box, C with the thickness of 20 nm is evaporated on the perovskite light absorption layer obtained and obtained in a high vacuum environment by utilizing a thermal evaporation method 60 And then againBCP, 7 nm a thick, was evaporated and finally a layer of 150 f nm f copper was reheat evaporated as a metal electrode.
(7) And in a nitrogen glove box, testing and packaging the prepared lead-tin blended perovskite solar cell.
As can be seen from the current-voltage curve of fig. 5, the perovskite solar cell prepared by the self-bottom passivation strategy has a photoelectric conversion efficiency of about 21%.
Claims (10)
1. The perovskite film is characterized in that the perovskite film is prepared by adding an autodeposition passivating agent into a perovskite precursor solution, wherein the autodeposition passivating agent is a Good's buffer containing sulfamic acid or a Good's buffer containing aminocarboxylic acid.
2. The perovskite thin film of claim 1, wherein the Good's buffer containing sulfamic acid is tris (hydroxymethyl) aminopropanesulfonic acid or N-carbamoylmethyl ethane sulfonic acid, and the Good's buffer containing aminocarboxylic acid is glycinamide hydrochloride or glycylglycine.
3. The perovskite thin film of claim 1, wherein the perovskite precursor is ABX 3 Wherein, A is any one, two or three of cesium ions, formamidino and methylamino, which are mixed in any proportion; b is any one or two of lead ions and tin ions mixed in any proportion; x is any one, two or three of iodide ions, bromide ions and chloride ions, and the mixture is mixed in any proportion.
4. A perovskite thin film according to claim 3, wherein the amount of the autodeposition passivating agent is from 0.01% to 10% of the molar amount of B-site ions in the perovskite precursor.
5. A perovskite thin film as claimed in claim 3, wherein: the dosage of the self-sinking bottom passivating agent is 0.5% -3% of the molar quantity of B-site ions in the perovskite precursor.
6. Use of the perovskite thin film of claim 1 in the preparation of a perovskite solar cell.
7. The use according to claim 6, characterized in that: the perovskite solar cell is a formal perovskite cell or a trans-perovskite cell.
8. The use according to claim 6, characterized in that: the perovskite film adopts at least one of spin coating, knife coating, slit coating and spray coating to deposit perovskite precursor solution on a substrate to form a perovskite light absorption layer.
9. The use according to claim 6, characterized in that: the substrate is a transparent rigid or flexible substrate.
10. A perovskite solar cell comprising the perovskite thin film of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311479703.2A CN117641957A (en) | 2023-11-08 | 2023-11-08 | Bottom passivation method of perovskite film |
Applications Claiming Priority (1)
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