CN117637900A - Preparation method of solar cell back film - Google Patents
Preparation method of solar cell back film Download PDFInfo
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- CN117637900A CN117637900A CN202210980721.8A CN202210980721A CN117637900A CN 117637900 A CN117637900 A CN 117637900A CN 202210980721 A CN202210980721 A CN 202210980721A CN 117637900 A CN117637900 A CN 117637900A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 114
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 114
- 239000010703 silicon Substances 0.000 claims abstract description 114
- 238000000034 method Methods 0.000 claims abstract description 108
- 230000008569 process Effects 0.000 claims abstract description 85
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims abstract description 58
- 230000008021 deposition Effects 0.000 claims abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 107
- 238000002161 passivation Methods 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000009825 accumulation Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 230000005686 electrostatic field Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 47
- 238000000151 deposition Methods 0.000 description 37
- 229910017107 AlOx Inorganic materials 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 238000006388 chemical passivation reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
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- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a preparation method of a solar cell back film, which comprises the following steps: s1, placing a silicon wafer into a process cavity; s2, introducing trimethylaluminum and N into the process chamber in a vacuum state 2 O and NH 3 Controlling the temperature of the process cavity to be more than or equal to 200 ℃ and less than or equal to 300 ℃; s3, sequentially carrying out AlO on the silicon wafer X Deposition and SiN deposition; s4, obtaining the silicon wafer with one side coated with the film. The preparation method of the solar cell back film of the invention enables trimethylaluminum and N to be realized by controlling the temperature in a process cavity under vacuum 2 O is thermally decomposed and simultaneously introduced with NH 3 Providing a hydrogen source forCatalysis can be carried out on silicon wafers to carry out AlO X Pre-passivating the back surface of the silicon wafer prior to deposition to enable AlO X Deposition is a more uniform and stable deposition on a pre-passivation basis and is achieved by AlO X The silicon wafer is deposited to form field effect passivation, and electrostatic field is formed at the section of the silicon wafer through charge accumulation, so that minority carrier concentration is reduced, passivation quality and effect are improved, and back recombination and defects are reduced.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a solar cell back film.
Background
In recent years, the photovoltaic industry is actively developing, and solar cells can be divided into aluminum back surface field cells, emitter passivation and back contact cells (Passivated Emitter and Rear Cell, PERC), tunnel oxide passivation contact cells, emitter passivation heterojunction cells with intrinsic amorphous layers and interdigital back contact cells according to the structural difference of crystalline silicon solar cells. Although solar cell technology is of a large variety, the dominant product of the current more mature technology or cell manufacturers is a PERC cell. The PERC battery technology is mainly characterized in that the passivation is carried out through a dielectric film AlOx on the back surface, and local metal contact is adopted, so that the surface recombination speed is greatly reduced, and meanwhile, the light reflection on the back surface is improved, and the battery conversion efficiency is improved.
Currently, alOx passivation layers are mainly prepared by atomic layer deposition (Atomic layer deposition, ALD), plasma enhanced atomic layer deposition (Plasma enhanced atomic layer deposition, PEALD), and plasma enhanced chemical vapor deposition (Plasma enhanced chemical vapor level, PECVD), and less physical vapor deposition (Physical vapor deposition, PVD). The preparation principle of ALD and PEALD is that a precursor of alumina and an oxidant precursor are sequentially introduced into a reaction cavity, and then an AlOx layer with an atomic layer dimension is prepared through adsorption and reaction of the precursors on the surface of a silicon wafer. PECVD is a technique in which a reaction gas is activated by a plasma to promote a chemical reaction in the surface or near-surface space of a substrate to produce a solid film. The basic principle is that under the action of high frequency or direct current electric field, source gas is ionized to form plasma, and low temperature plasma is used as energy source to activate several kinds of reaction gas of AlOx and realize chemical vapor deposition.
The tubular PECVD technology has the characteristics of high film forming rate, easy maintenance, long normal running time, flexible process, capability of realizing the same machine and the same tube with the silicon nitride film, obvious comprehensive cost advantage, and the like, and gradually becomes the first choice of battery manufacturers. However, in the existing process for preparing an AlOx film by PECVD, the prepared AlOx film has room for improvement in passivation effects of surface chemical passivation and field passivation. Therefore, how to reduce the difference in passivation, further enhance the AlOx passivation effect, and increase the battery conversion efficiency is still a problem that needs to be continuously improved.
Disclosure of Invention
The invention aims to provide a preparation method of a solar cell back film, which is used for improving the chemical passivation quality and effect of the back surface of a solar cell and further improving the conversion efficiency of the cell.
In order to achieve the above object, the present invention provides a method for preparing a solar cell back film, comprising the steps of:
s1, placing a silicon wafer into a process cavity;
s2, introducing trimethylaluminum and N into the process cavity in a vacuum state 2 O and NH 3 Controlling the temperature of the process cavity to be more than or equal to 200 ℃ and less than or equal to 300 ℃;
s3, sequentially carrying out AlO on the silicon wafer X Deposition and SiN deposition;
s4, obtaining the silicon wafer with one side coated with the film.
The preparation method of the solar cell back film has the beneficial effects that: in a vacuum state, introducing the trimethylaluminum and the N into the process cavity 2 O and the NH 3 And controlling the temperature in the process chamber to enable the trimethylaluminum and the N to be in a state of 2 O is thermally decomposed and simultaneously introduced with the NH 3 Providing a hydrogen source for catalysis, and being capable of carrying out the AlO on the silicon wafer X Pre-passivating the back surface of the silicon wafer before deposition to enable the AlO to be X The deposition is carried out as a more uniform and stable deposition on the basis of pre-passivation and by means of said AlO X Forming field effect passivation by deposition on the silicon wafer, forming electrostatic field at the cross section of the silicon wafer by charge accumulation, thereby reducing minority carriersConcentration, passivation quality and effect are improved, back surface recombination and defects are reduced, and AlO is protected through SiN deposition X And the passivation film ensures the optical characteristics of the side surface of the silicon wafer. In general, the preparation method of the solar cell back film can improve the conversion efficiency of the cell and improve the open-circuit voltage Uoc and the short-circuit current Isc of the cell during operation.
In one possible solution, trimethylaluminum, N is introduced into the process chamber 2 O and NH 3 And when the pressure of the process cavity is more than or equal to 1200mtorr and less than or equal to 1600mtorr. The device has the beneficial effects that the arrangement is convenient for improving the reaction rate and ensuring the safety of equipment.
In one possible solution, trimethylaluminum, N is introduced into the process chamber 2 O and NH 3 When the flow rate of the trimethylaluminum is more than or equal to 300mg/min and less than 600mg/min, the N is 2 The flow rate of O is more than or equal to 3000sccm and less than 5000sccm, the NH 3 The flow rate of (2) is 100sccm or more and less than 200sccm. The beneficial effects are that, through the NH 3 Providing a hydrogen source for catalysis by said trimethylaluminum and said N 2 O pre-passivates the side surface of the silicon wafer to promote AlO X Stability and uniformity of deposition by controlling the trimethylaluminum, the N 2 O and the NH 3 Is convenient for reducing the loss of raw materials.
In one possible scheme, the reaction time of S2 is 3min or more and 5min or less. The device has the beneficial effects that the device can ensure the processing efficiency while ensuring the completion of the pre-passivation effect.
In one possible solution, the silicon wafer has a SiN layer on the other side. The method has the advantages that the back surface coating is carried out on one side of the silicon wafer through the reaction, and the SiN layer is arranged on the other side of the silicon wafer, so that the silicon wafer can meet the photoelectric conversion condition, the SiN layer of the silicon wafer is not limited to the arrangement before and after the reaction, and the flexible arrangement of the processing steps is facilitated.
In one possible implementation, between S1 and S2, the method includes: and vacuumizing the process cavity, heating the process cavity, detecting leakage of the process cavity, and performing subsequent steps after detecting normal. The method has the advantages that a series of preparation before reaction such as vacuumizing, heating, leakage detection and the like is carried out on the process cavity before pre-passivation is carried out, the forward production of the reaction is ensured, the quality of the silicon wafer after processing is ensured, and the reject ratio is reduced.
In one possible implementation, before the step S1, the method further includes: and performing texturing, diffusion, cesium doping, etching, polishing and hot oxygen on the silicon wafer. The silicon etching method has the advantages that before the reaction, the silicon is subjected to operations such as texturing, diffusion, cesium doping, etching, polishing, hot oxygen and the like, so that on one hand, impurities and oxide layers on the silicon wafer can be removed, the reflectivity is improved, on the other hand, the flatness of the surface of the silicon wafer can be improved, and the uniformity of the thickness of a coating film is indirectly improved.
In one possible solution, in the AlO X Between deposition and the SiN deposition, and between the S3 and the S4, includes: and vacuumizing the process cavity. The beneficial effects are that, in the AlO X Vacuumizing is carried out between deposition and SiN deposition, so that the interaction between different reaction sources is reduced; and vacuumizing is carried out between the step S3 and the step S4, so that gas in the reaction cavity can be prevented from entering air when the processed silicon wafer is taken out.
Drawings
FIG. 1 is a flowchart of a method for preparing a solar cell back film according to a first embodiment of the present invention;
FIG. 2 is a flowchart of a method for preparing a solar cell back film according to a second embodiment of the present invention;
fig. 3 is a graph comparing conversion efficiencies of a battery prepared by a back film by means of the prior art with the batteries of the above examples 1 to 12;
FIG. 4 is a photograph of a solar cell back film prepared in a first embodiment of the present application for luminescence testing;
fig. 5 is a photograph of a solar cell back film prepared in the prior art for a luminescence test.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
Aiming at the problems existing in the prior art, the embodiment of the invention provides a preparation method of a solar cell back film.
Fig. 1 is a flowchart of a method for manufacturing a solar cell back film according to a first embodiment of the present invention.
In some embodiments of the present invention, the method for preparing the solar cell back film includes the following steps:
s1, placing a silicon wafer into a process cavity;
s2, introducing trimethylaluminum and N into the process cavity in a vacuum state 2 O and NH 3 Controlling the temperature of the process cavity to be more than or equal to 200 ℃ and less than or equal to 300 ℃;
s3, sequentially carrying out AlO on the silicon wafer X Deposition and SiN deposition;
s4, obtaining the silicon wafer with one side coated with the film.
In some embodiments of the invention, the wafers are sequentially AlO X The side where the SiN layer is deposited and the side where the SiN layer is deposited is called the back side, and the film formed on the side of the silicon wafer is called the back film, and the side where the SiN layer is provided only is called the front side, i.e. the silicon wafer is provided only with SiThe film formed on the side of the N layer is referred to as a positive film. The back film and the front film are not limited to a certain structural film. In some embodiments, a layer of the back film adjacent to the silicon wafer is an AlOx layer.
In some embodiments, the SiN layer comprises at least one of siox+sin, sion+sin, sin+sion, siox+sin+sion, and siox+sin+sion+siox.
In some embodiments, the lower the light reflectivity of the front film of the solar cell, or the greater the passivation effect of the back film of the solar cell, the higher the light conversion rate of the solar cell. The preparation method of the solar cell back film mainly improves the conversion efficiency of the cell by improving the passivation effect of the back film.
In some embodiments, the Trimethylaluminum (TMA), N is introduced into the process chamber 2 O and NH 3 Controlling the temperature in the process chamber to enable the trimethylaluminum and the N to be in a state of 2 O is thermally decomposed by the NH 3 Providing a hydrogen source to promote said trimethylaluminum and said N 2 O reacts to form AlO X Pre-forming an alumina layer on the silicon wafer before deposition to enable the AlO to be carried out subsequently X The substrate on the silicon wafer is more stable during deposition, and the AlO on the silicon wafer is lifted X And the field effect passivation effect formed by deposition is further improved, so that the conversion efficiency is further improved.
In some embodiments, the N 2 O is nitrous oxide, also known as laughing gas; the NH is 3 I.e. ammonia.
In some embodiments, trimethylaluminum, N, is introduced into the process chamber 2 O and NH 3 And when the pressure of the process cavity is more than or equal to 1200mtorr and less than or equal to 1600mtorr.
In some embodiments, trimethylaluminum, N, is introduced into the process chamber 2 O and NH 3 When the flow rate of the trimethylaluminum is more than or equal to 300mg/min and less than 600mg/min, the N is 2 The flow rate of O is more than or equal to 3000sccm and less than 5000sccm, the NH 3 The flow rate of (2) is 100sccm or more and less than 200sccm.
In some embodiments, the reaction time of S2 is 3min or greater and 5min or less.
In some embodiments, the silicon wafer has a SiN layer on the other side. Specifically, the SiN layer on the other side of the silicon wafer may occur before the formation of the back film, or may occur after the formation of the back film, that is, it is not limited whether a positive film is present on the silicon wafer placed in the process chamber.
In some embodiments, between S1 and S2 comprises: and heating the process cavity, detecting leakage of the process cavity, and performing subsequent steps after detecting normal.
In some embodiments, before the step S1, further includes: and performing texturing, diffusion, cesium doping, etching, polishing and hot oxygen on the silicon wafer.
In some embodiments, in the AlO X Between deposition and the SiN deposition, and between the S3 and the S4, includes: and vacuumizing and purging the process cavity.
Fig. 2 is a flowchart of a method for manufacturing a solar cell back film according to a second embodiment of the present invention.
In some embodiments of the present invention, the method for preparing the solar cell back film includes the following steps:
s201, placing a silicon wafer to a graphite boat, and pushing the graphite boat to a process chamber;
s202, vacuumizing the process cavity;
s203, heating the process chamber;
s204, performing leakage detection on the process chamber;
s205, introducing trimethylaluminum and N into the process cavity 2 O and NH 3 Controlling the temperature in the process chamber to enable the trimethylaluminum and the N to be in a state of 2 O is thermally decomposed;
s206, alO is carried out on the silicon wafer X Depositing;
s207, vacuumizing the process cavity;
s208, siN deposition is carried out on the silicon wafer;
s209, vacuumizing the process cavity;
s210, purging the silicon wafer in the process cavity;
s211, taking out the graphite boat.
In order to more systematically describe the above method, the following describes the preparation method of the solar cell back film provided by the embodiment of the invention in combination with specific parameters.
Example 1
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 300mg/min, and the N is 2 The flow rate of O is 3000sccm, the NH 3 The flow rate of the silicon wafer is 100sccm, the temperature of the process chamber is controlled to be 200 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.33%.
Example 2
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 200 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.18%.
Example 3
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 500mg/min, and the N is 2 The flow rate of O is 4500sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 200 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.18%.
Example 4
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 600mg/min, and the N is 2 The flow rate of O is 5000sccm, the NH 3 The flow rate of the silicon wafer is 200sccm, the temperature of the process chamber is controlled to be 200 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.2%.
Example 5
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 220 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.14%.
Example 6
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 240 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.23%.
Example 7
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 250 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.13%.
Example 8
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 260 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.23%.
Example 9
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 280 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is 23.19 percent.
Example 10
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 300 ℃, and AlO is sequentially carried out on the silicon wafer after 3min of reaction X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is 23.19 percent.
Example 11
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 240 ℃, and AlO is sequentially carried out on the silicon wafer after 4min of reaction X Depositing SiN to obtain a silicon wafer with one side coated with film, and testing the electric property of the silicon waferThe cell conversion efficiency was 23.24%.
Example 12
Placing a silicon wafer into a process cavity, and introducing trimethylaluminum and N into the process cavity 2 O and NH 3 The flow rate of the trimethylaluminum is 400mg/min, and the N is the same as that of the trimethylaluminum 2 The flow rate of O is 4000sccm, the NH 3 The flow rate of the silicon wafer is 150sccm, the temperature of the process chamber is controlled to be 240 ℃, and AlO is sequentially carried out on the silicon wafer after the reaction is carried out for 5min X Depositing and SiN, and obtaining a silicon wafer with one side coated with film, wherein the battery conversion efficiency of the silicon wafer is tested to be 23.22%.
Fig. 3 is a graph comparing conversion efficiencies of a battery prepared by a back film in a related art manner with the batteries of examples 1 to 12 described above.
In the prior art, the silicon wafer back film is prepared by a direct preparation method, namely AlO is directly carried out on the silicon wafer in a process cavity X Deposition and SiN deposition. As shown in fig. 3, the conversion efficiency of the battery prepared by the method of the present application is higher than that of the battery prepared by the method of the related art under the same conditions.
Fig. 4 is a photograph of a solar cell back film prepared in the first embodiment of the present application for a luminescence test, and fig. 5 is a photograph of a solar cell back film prepared in the prior art for a luminescence test.
As shown in fig. 4 and 5, the present application is implemented by prepositioning trimethylaluminum, N 2 O and NH 3 The mixed thermal decomposition effect further enhances the AlOx passivation effect, and the AlO is performed X And before deposition and SiN deposition, forming a layer of oxide and hydride on the alkali polished surface of the silicon wafer, and having a certain passivation effect. As can be seen by comparing fig. 4 and 5, the battery obtained by the thermal decomposition effect of the present application has higher brightness when subjected to the luminescence test.
Overall, the conversion efficiency of the solar cell prepared by the preparation method of the solar cell back film can be improved by 0.05% to 0.08% compared with the prior art.
While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (8)
1. The preparation method of the solar cell back film is characterized by comprising the following steps of:
s1, placing a silicon wafer into a process cavity;
s2, introducing trimethylaluminum and N into the process cavity in a vacuum state 2 O and NH 3 Controlling the temperature of the process cavity to be more than or equal to 200 ℃ and less than or equal to 300 ℃;
s3, sequentially carrying out AlO on the silicon wafer X Deposition and SiN deposition;
s4, obtaining the silicon wafer with one side coated with the film.
2. The method according to claim 1, wherein trimethylaluminum, N are introduced into the process chamber 2 O and NH 3 And when the pressure of the process cavity is more than or equal to 1200mtorr and less than or equal to 1600mtorr.
3. The method according to claim 1, wherein trimethylaluminum, N are introduced into the process chamber 2 O and NH 3 When the flow rate of the trimethylaluminum is more than or equal to 300mg/min and less than 600mg/min, the N is 2 The flow rate of O is more than or equal to 3000sccm and less than 5000sccm, the NH 3 The flow rate of (2) is 100sccm or more and less than 200sccm.
4. The method according to claim 1, wherein the reaction time of S2 is 3min or more and 5min or less.
5. The method of claim 1, wherein the silicon wafer has a SiN layer on the other side.
6. The method of claim 1, comprising, between S1 and S2:
and heating the process cavity, detecting leakage of the process cavity, and performing subsequent steps after detecting normal.
7. The method of claim 1, further comprising, prior to S1: and performing texturing, diffusion, cesium doping, etching, polishing and hot oxygen on the silicon wafer.
8. The method of claim 1, wherein in said AlO X Between deposition and the SiN deposition, and between the S3 and the S4, includes: and vacuumizing and purging the process cavity.
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