CN117637865A

CN117637865A - Sensing device and manufacturing method thereof

Info

Publication number: CN117637865A
Application number: CN202210975607.6A
Authority: CN
Inventors: 刘侑宗; 杨蕙菁; 谢承学; 李淂裕
Original assignee: Innolux Display Corp
Current assignee: Innolux Corp
Priority date: 2022-08-15
Filing date: 2022-08-15
Publication date: 2024-03-01
Also published as: US20240055454A1; TW202410484A

Abstract

The disclosure provides a sensing device, which comprises a substrate, a circuit layer, a photosensitive assembly, a shading layer and a conducting layer, wherein the circuit layer is arranged on the substrate, the photosensitive assembly is arranged on the substrate and is electrically connected with the circuit layer, the shading layer is arranged on the photosensitive assembly and is provided with an opening, the opening is overlapped with the photosensitive assembly, the conducting layer is arranged on the shading layer, and the conducting layer penetrates through the opening and is electrically connected with the photosensitive assembly. The disclosure also provides a manufacturing method of the sensing device.

Description

Sensing device and manufacturing method thereof

Technical Field

The present disclosure relates to a sensing device and a method for manufacturing the same, and more particularly, to a method for manufacturing a sensing device capable of simplifying a manufacturing process.

Background

The optical sensing device is widely applied to consumer electronic products such as smart phones, wearable devices and the like, and becomes an indispensable necessity in the modern society. With the explosive development of such consumer electronics products, consumers have a great desire for the quality, functionality, and price of these products.

The photosensitive component in the optical sensing device can convert the received light into an electric signal, and the generated electric signal can be transmitted to the driving component, the logic circuit and the like in the optical sensing device for processing and analysis.

In order to improve the performance of the sensing device, developing a method for manufacturing the sensing device (e.g., reducing the number of masks and steps used) that can further simplify the manufacturing process or reduce the cost is still one of the subjects of the current research in the industry.

Disclosure of Invention

According to some embodiments of the present disclosure, a sensing device is provided, which includes a substrate, a circuit layer, a photosensitive component, a light shielding layer and a conductive layer, wherein the circuit layer is disposed on the substrate, the photosensitive component is disposed on the substrate and electrically connected with the circuit layer, the light shielding layer is disposed on the photosensitive component and has an opening, the opening overlaps the photosensitive component, the conductive layer is disposed on the light shielding layer, and the conductive layer passes through the opening and is electrically connected with the photosensitive component.

According to some embodiments of the present disclosure, there is provided a method for manufacturing a sensing device, including: providing a substrate; forming a circuit layer on a substrate; forming a photosensitive component on the circuit layer; forming a first insulating layer on the photosensitive component; forming a light shielding layer on the first insulating layer; forming an opening in the shading layer, wherein the opening is overlapped with the photosensitive component; patterning the first insulating layer through the opening to expose the photosensitive element; and forming a conductive layer on the shading layer, wherein the conductive layer penetrates through the opening and is electrically connected with the photosensitive component.

In order to make the features and advantages of the present disclosure more comprehensible, several embodiments accompanied with figures are described in detail below.

Drawings

In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below, wherein:

FIGS. 1A-1C are schematic cross-sectional views of a sensor device at various stages of a process according to some embodiments of the disclosure;

FIG. 2 is a schematic diagram showing a cross-sectional structure of a sensing device according to some embodiments of the present disclosure;

FIGS. 3A-3C are schematic cross-sectional views of a sensor device at various stages of the fabrication according to some embodiments of the present disclosure;

FIGS. 4A-4C are schematic cross-sectional views of a portion of a device during various stages of a fabrication process according to some embodiments of the present disclosure;

fig. 5A-5C are schematic cross-sectional views of a portion of a device during various stages of processing according to some embodiments of the present disclosure.

The reference numerals in fig. 1A-5C are illustrated as follows:

10A, 10B, 10C sensing device

100A Circuit layer

100a first type semiconductor layer

100b intrinsic semiconductor layer

100c second type semiconductor layer

100u photosensitive assembly

101 transparent conductive layer

102 substrate

104a, 104a1, 104b conductive layer

106a, 106a1, 106a2, 106b, 106c, 106d: insulating layer

106P opening

108a, 108a1, 108b, 108c insulating layer

110a, 110b, 110c, light shielding layer

130 micro lens

d1 first distance

d2 second distance

E1, E1 first edge

E2, E2 second edge

P1, P2, P3 openings

RS groove

TR1, TR2, TR3 thin film transistors

V1, V2: through hole

Detailed Description

The following describes a sensing device and a method for manufacturing the sensing device according to an embodiment of the present disclosure in detail. It is to be understood that the following description provides many different embodiments for implementing different aspects of some embodiments of the disclosure. The specific components and arrangements described below are merely illustrative of some embodiments of the present disclosure. These are, of course, merely examples and are not intended to be limiting of the present disclosure. Moreover, similar and/or corresponding reference numerals may be used in different embodiments to identify similar and/or corresponding components in order to clearly describe the present disclosure. However, the use of such similar and/or corresponding reference numerals is merely for simplicity and clarity in describing some embodiments of the present disclosure and is not intended to represent any relevance between the various embodiments and/or structures discussed.

It will be appreciated that in embodiments, relative terms such as "lower" or "bottom" or "upper" or "top" may be used to describe one element's relative relationship to another element of the figures. It will be appreciated that if the device of the figures is turned upside down, the elements described as being on the "lower" side would then be elements on the "upper" side. Embodiments of the present disclosure may be understood together with the accompanying drawings, which are also considered part of the disclosure description. It should be understood that the drawings of the present disclosure are not to scale and that virtually any enlargement or reduction of the size of the components is possible in order to clearly demonstrate the features of the present disclosure.

Furthermore, when a first material layer is described as being on or over a second material layer, this may include situations where the first material layer is in direct contact with the second material layer or where there may be no direct contact between the first material layer and the second material layer, i.e., where one or more other material layers may be spaced between the first material layer and the second material layer. However, if the first material layer is directly on the second material layer, this means that the first material layer is in direct contact with the second material layer.

Furthermore, it should be understood that the use of ordinal numbers such as "first," "second," etc., in the description and in the claims is by itself not intended to connote and indicate any preceding ordinal number of element(s), nor does it indicate the order in which an element is joined to another element, or the order in which the elements are manufactured, and that the ordinal numbers are used merely to distinguish one element having a name from another element having a same name. The same words may not be used in the claims and the specification, e.g., a first component in the specification may be a second component in the claims.

In some embodiments of the disclosure, terms such as "connected," "interconnected," and the like, with respect to joining, connecting, and the like, may refer to two structures being in direct contact, or may refer to two structures not being in direct contact, unless otherwise specified, with other structures being disposed between the two structures. And the term coupled, connected, may also include situations where both structures are movable, or where both structures are fixed. Furthermore, the terms "electrically connected" or "electrically coupled" include any direct or indirect electrical connection.

As used herein, the term "about" or "substantially" generally means within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The term "range between the first value and the second value" means that the range includes the first value, the second value, and other values therebetween.

It is to be understood that the following exemplary embodiments may be substituted, rearranged, combined to accomplish other embodiments without departing from the spirit of the present disclosure. Features of the embodiments can be combined and matched arbitrarily without departing from the spirit or conflict of the invention.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be appreciated that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The sensing device generally integrates a thin film transistor, a photosensitive device (e.g., a photodiode), an optical device (e.g., a device with a collimation function) and the like into the device, and a large number of masks are required in the manufacturing process, which is complicated.

According to the embodiment of the disclosure, the manufacturing method of the sensing device can integrate a part of the structures of the components in the sensing device, for example, integrate the photosensitive component with a part of the structures of the optical component or integrate the photosensitive component with a part of the structures of the circuit layer, reduce the number of photomasks and steps used in the manufacturing process, simplify the manufacturing process or improve the yield. According to the embodiments of the present disclosure, the sensing device manufactured by the manufacturing method can reduce the equivalent capacitance of the photosensitive component, thereby improving the sensitivity of the sensing device or enhancing the overall performance of the sensing device. In addition, according to some embodiments, the structural design of the photosensitive component can further reduce the occurrence probability of leakage current or reduce the capacitance value, thereby improving the performance of the photosensitive component.

Referring to fig. 1A-1C, fig. 1A-1C illustrate schematic cross-sectional structures of a sensing device 10A at various stages of the fabrication process according to some embodiments of the present disclosure. It should be appreciated that, according to some embodiments, additional operational steps may be provided before, during, and/or after the fabrication of the sensing device 10A. According to some embodiments, some of the operational steps described may be replaced or omitted. According to some embodiments, the order of some of the described operational steps is interchangeable. Further, it should be understood that, for clarity of illustration, some components of the sensing device 10A are omitted from the figures, and only some components are schematically shown. According to some embodiments, additional features may be added to the sensing device 10A described below. According to other embodiments, some features of the sensing device 10A described below may be substituted or omitted.

First, referring to fig. 1A, a substrate 102 is provided. Next, a circuit layer 100A may be formed on the substrate 102. According to some embodiments, the circuit layer 100A may include a buffer layer (not shown) and a thin film transistor, such as the thin film transistors TR1, TR2 and TR3 shown in the drawings, and the circuit layer 100A may include conductive elements and signal lines electrically connected to the thin film transistors, an insulating layer formed between the conductive elements, a planarization layer, and the like. According to some embodiments, the signal lines may include, for example, a current signal line, a voltage signal line, a high frequency signal line, a low frequency signal line, and the signal lines may transmit a component operating Voltage (VDD), a common ground Voltage (VSS), or a driving component terminal voltage, which is not limited in the disclosure.

According to some embodiments, the thin film transistor may include a switching transistor (switching transistor), a driving transistor, a reset transistor (reset transistor), a transistor amplifier (transistor amplifier), or other suitable thin film transistor. Specifically, according to some embodiments, the thin film transistor TR1 may be a reset transistor, the thin film transistor TR2 may be a transistor amplifier or a source follower (source follower), and the thin film transistor TR3 may be a switching transistor, but is not limited thereto.

It should be appreciated that the number of thin film transistors is not limited to that shown in the figures, and that the sensing device 10A may have other suitable numbers or types of thin film transistors according to various embodiments. Furthermore, the thin film transistor may include a top gate (top gate) thin film transistor, a bottom gate (bottom gate) thin film transistor, a dual gate or double gate thin film transistor, or a combination thereof. According to some embodiments, the thin film transistor may be further electrically connected to the capacitor element, but is not limited thereto. Furthermore, the thin film transistor may include at least one semiconductor layer, a gate dielectric layer and a gate electrode layer. According to some embodiments, the material of the semiconductor layer may include amorphous silicon, polysilicon, or metal oxide, and different thin film transistors may include different semiconductor materials. For example, the semiconductor material of the thin film transistor TR1 or the thin film transistor TR3 is a metal oxide, and the semiconductor material of the thin film transistor TR2 is polysilicon, but not limited thereto. According to some embodiments, the semiconductor materials of the thin film transistors TR1, TR2 and TR3 are all polysilicon. The thin film transistor may exist in various forms well known to those skilled in the art, and detailed structures of the thin film transistor will not be described herein.

According to some embodiments, the substrate 102 may include a flexible substrate, a rigid substrate, or a combination thereof, but is not limited thereto. According to some embodiments, the material of the substrate 102 may include glass, quartz, sapphire (sapphire), ceramic, polyimide (PI), polycarbonate (PC), polyethylene terephthalate (polyethylene terephthalate, PET), polypropylene (PP), other suitable materials, or a combination of the foregoing, but is not limited thereto. Furthermore, according to some embodiments, the substrate 102 may comprise a metal-glass fiber composite board, or a metal-ceramic composite board, but is not limited thereto. In addition, the light transmittance of the substrate 102 is not limited, that is, the substrate 102 may be a light-transmitting substrate, a semi-transmitting substrate, or a light-impermeable substrate.

As shown in fig. 1A, according to some embodiments, the circuit layer 100A may include a conductive layer 104a, where the conductive layer 104a may serve as a source electrode or a drain electrode of the thin film transistor, and the source electrode or the drain electrode may be further electrically connected to a photosensitive element formed later. In detail, according to some embodiments, a portion of the gate dielectric layer and the dielectric layer in the circuit layer 100A may be removed by a patterning process to form the via V1, and then the conductive layer 104a is formed in the via V1.

According to some embodiments, the conductive layer 104a may comprise a conductive material, such as a metallic material, a transparent conductive material, other suitable conductive materials, or a combination of the foregoing, but is not limited thereto. The metal material may include, for example, copper (Cu), silver (Ag), gold (Au), tin (Sn), aluminum (Al), molybdenum (Mo), tungsten (W), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), alloys of the foregoing metals, other suitable materials, or combinations of the foregoing, but is not limited thereto. The transparent conductive material may include a transparent conductive oxide (transparent conductive oxide, TCO), for example, may include Indium Tin Oxide (ITO), antimony zinc oxide (antimony zinc oxide, AZO), tin oxide (tin oxide, snO), zinc oxide (zinc oxide, znO), indium zinc oxide (indium zinc oxide, IZO), indium gallium zinc oxide (indium gallium zinc oxide, IGZO), indium tin zinc oxide (indium tin zinc oxide, ITZO), antimony tin oxide (antimony tin oxide, ATO), other suitable transparent conductive materials, or a combination of the foregoing, but is not limited thereto.

According to some embodiments, the conductive layer 104a may be formed by a chemical vapor deposition process, a physical vapor deposition process, an electroplating process, an electroless plating process, other suitable processes, or a combination thereof. The chemical vapor deposition process may include, but is not limited to, low Pressure Chemical Vapor Deposition (LPCVD), low Temperature Chemical Vapor Deposition (LTCVD), rapid Thermal Chemical Vapor Deposition (RTCVD), plasma-enhanced chemical vapor deposition (PECVD), or Atomic Layer Deposition (ALD), for example. The physical vapor deposition process may include, but is not limited to, sputtering, evaporation, pulsed laser deposition, etc. Furthermore, one or more photolithography processes and/or etching processes may be used to remove a portion of the gate dielectric layer and the dielectric layer to form the via V1. According to some embodiments, the photolithography process may include, but is not limited to, photoresist coating (e.g., spin coating), soft baking, hard baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning, drying, and the like. The etching process may include a dry etching process or a wet etching process, but is not limited thereto.

Then, the photosensitive element 100u may be formed on the circuit layer 100A. According to some embodiments, the photosensitive element 100u may overlap a source electrode or a drain electrode (e.g., the conductive layer 104 a) of a thin film transistor (e.g., the thin film transistor TR 1) in a normal direction (e.g., a Z direction in the drawing) of the substrate 102. The photosensitive element 100u may be electrically connected to the thin film transistor of the circuit layer 100A through the conductive layer 104 a. The photosensitive element 100u may receive light, convert the light into an electrical signal, and transmit the generated electrical signal to the circuit layer 100A, and process and analyze the electrical signal by the circuit elements (e.g., the thin film transistors TR1, TR2, TR 3) in the circuit layer 100A. According to some embodiments, the photosensitive element 100u may include a photodiode (photo diode), other elements capable of converting optical signals and electrical signals, or a combination of the foregoing, but is not limited thereto.

In detail, the photosensitive element 100u may include a first type semiconductor layer 100a, a second type semiconductor layer 100c, and an intrinsic semiconductor layer 100b. A first type semiconductor layer 100A may be formed on the circuit layer 100A, an intrinsic semiconductor layer 100b may be formed on the first type semiconductor layer, and then a second type semiconductor layer 100c may be formed on the intrinsic semiconductor layer 100b. According to some embodiments, the first type semiconductor layer 100a of the photosensitive element 100u may be directly formed on the conductive layer 104a, and the first type semiconductor layer 100a may be electrically connected to the conductive layer 104 a. For example, the photosensitive element 100u may be in contact with a source electrode or a drain electrode of a thin film transistor (e.g., the thin film transistor TR 1), but the disclosure is not limited thereto. In some embodiments, there may be a plurality of photosensitive elements 100u electrically connected to the conductive layer 104a, but not limited thereto. It should be noted that, with the above configuration, the photosensitive element 100u can be in contact with the thin film transistor of the circuit layer 100A for direct electrical connection, and the photosensitive element 100u can be electrically connected with the thin film transistor without an additional conductive layer and an insulating layer, so that the manufacturing process can be simplified and the manufacturing cost can be reduced.

The photosensitive element 100u may have a P-I-N structure, an N-I-P structure, or other suitable structure, and when the photosensitive element 100u is irradiated by light, electron hole pairs may be generated to form photocurrent, but is not limited thereto. According to some embodiments, the first type semiconductor layer 100a may be an N-type doped semiconductor layer, the second type semiconductor layer 100c may be a P-type doped semiconductor layer, and the N-I-P structure is formed from bottom to top in combination with the intrinsic semiconductor layer 100b, but the disclosure is not limited thereto. According to other embodiments, the first type semiconductor layer 100a may be a P-type doped semiconductor layer, the second type semiconductor layer 100c may be an N-type doped semiconductor layer, and the intrinsic semiconductor layer 100b may be a P-I-N structure formed from bottom to top, but the disclosure is not limited thereto.

According to some embodiments, the materials of the first type semiconductor layer 100a, the intrinsic semiconductor layer 100b, and the second type semiconductor layer 100c may include semiconductor materials, such as silicon (e.g., amorphous silicon), germanium (germanium), indium gallium arsenide (indium gallium arsenide, inGaAs), or other suitable materials. According to some embodiments, the first type semiconductor layer 100a, the intrinsic semiconductor layer 100b, and the second type semiconductor layer 100c may be formed by an epitaxial growth process, an ion implantation process, a chemical vapor deposition process, a physical vapor deposition process, other suitable processes, or a combination thereof.

In addition, a transparent conductive layer 101 may be formed on the second type semiconductor layer 100c of the photosensitive element 100 u. According to some embodiments, the transparent conductive layer 101 may serve as an electrode of the photosensitive assembly 100 u. According to some embodiments, the edge of the transparent conductive layer 101 is, but not limited to, tapered compared to the edge of the photosensitive element 100u (e.g., the edge of the second type semiconductor layer 100 c). The detailed structure of the photosensitive member 100u will be further described below.

According to some embodiments, the material of the transparent conductive layer 101 may include a transparent conductive material, which may include a transparent conductive oxide (transparent conductive oxide, TCO), for example, may include Indium Tin Oxide (ITO), antimony zinc oxide (antimony zinc oxide, AZO), tin oxide (tin oxide, snO), zinc oxide (ZnO), indium zinc oxide (indium zinc oxide, IZO), indium gallium zinc oxide (indium gallium zinc oxide, IGZO), indium tin zinc oxide (indium tin zinc oxide, ITZO), antimony tin oxide (antimony tin oxide, ATO), other suitable transparent conductive materials, or a combination of the foregoing, but is not limited thereto.

According to some embodiments, the transparent conductive layer 101 may be formed by a chemical vapor deposition process, a physical vapor deposition process, an electroplating process, an electroless plating process, other suitable processes, or a combination thereof. Furthermore, the transparent conductive layer 101 may be patterned by one or more photolithography processes and/or etching processes.

Next, an insulating layer 106a and/or an insulating layer 108a may be formed over the photosensitive element 100 u. In detail, an insulating layer 106a is conformally formed on the circuit layer 100A, the photosensitive element 100u and the transparent conductive layer 101, and the insulating layer 106a may cover the conductive layer 104a. The insulating layer 108a may be formed on the circuit layer 100A, the photosensitive element 100u, and the transparent conductive layer 101, and the insulating layer 106a may cover the conductive layer 104a, or may be further formed over the insulating layer 106 a. The insulating layer 108a may serve as a planarization layer.

The insulating layer 106a may have a single-layer or multi-layer structure. According to some embodiments, the material of the insulating layer 106a may include an inorganic material, an organic material, or a combination of the foregoing, but is not limited thereto. For example, the inorganic material may comprise silicon nitride, silicon oxide, silicon oxynitride, other suitable materials, or a combination of the foregoing, but is not limited thereto. For example, the organic material may include polyethylene terephthalate (polyethylene terephthalate, PET), polyethylene (PE), polyethersulfone (PEs), polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), other suitable materials, or a combination of the foregoing, but is not limited thereto.

According to some embodiments, the insulating layer 106a may be formed by a coating process, a chemical vapor deposition process, a physical vapor deposition process, a printing process, an evaporation process, a sputtering process, other suitable processes, or a combination thereof. In some embodiments, the insulating layer 106a may be patterned by one or more photolithography processes and/or etching processes, if desired, but not limited thereto.

According to some embodiments, the material of the insulating layer 108a may include an organic material, an inorganic material, other suitable materials, or a combination of the foregoing, but is not limited thereto. For example, the inorganic material may comprise silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials, or combinations of the foregoing, but is not limited thereto. For example, the organic material may include epoxy resin (epoxy resin), silicone resin, acryl resin (acryl resin) (e.g., polymethyl methacrylate (PMMA), polyimide (polyimide), perfluoroalkoxyalkane (perfluoroalkoxy alkane, PFA), other suitable materials, or a combination of the foregoing, but is not limited thereto.

According to some embodiments, the insulating layer 108a may be formed by a chemical vapor deposition process, a physical vapor deposition process, a coating process, a printing process, other suitable processes, or a combination thereof. In addition, the insulating layer 108a may be planarized to have a substantially planar top surface. According to some embodiments, the planarization process may include a grinding (polishing) process, a chemical-mechanical polishing (CMP) process, other suitable planarization processes, or a combination thereof. In some embodiments, the insulating layer 108a may be patterned by one or more photolithography processes and/or etching processes, if desired, but not limited thereto.

Referring to fig. 1B, an insulating layer 106B and a light shielding layer 110a may be formed on the insulating layer 108 a. According to some embodiments, the insulating layer 106b may be formed on the insulating layer 108a, and then the light shielding layer 110a may be formed on the insulating layer 106 b. Furthermore, an opening P1 may be formed in the light shielding layer 110a, the opening P1 and the photosensitive element 100u may overlap in a normal direction (e.g., a Z direction in the drawing) of the substrate 102, and then the insulating layer 106a, the insulating layer 108a, and the insulating layer 106b may be patterned through the opening P1 to expose the photosensitive element 100u. In detail, a portion of the light shielding layer 110a may be removed to form an opening P1, and then the patterning process is performed on the insulating layer 106a, the insulating layer 108a, and the insulating layer 106b with the light shielding layer 110a as a mask, so as to remove the insulating layer 106a, the insulating layer 108a, and the insulating layer 106b under the opening P1 to form a hole exposing a portion of the photosensitive element 100u (e.g., the transparent conductive layer 101 as an electrode of the photosensitive element 100 u).

It should be noted that the light shielding layer 110a can be used as a mask in a patterning process, so that the number of masks used in the process can be reduced, the production cost can be reduced, and the light shielding layer 110a also has an optical function, for example, the light shielding layer 110a can also reduce the reflection of light, can absorb the light reflected back and forth between the metal conductive layers, so as to achieve the effect of anti-reflection or reducing optical noise, and the opening P1 can have the function of collimating the light, and can be used as a pinhole (pin hole). By the above configuration, the photosensitive element 100u and a part of the optical element can be integrated, thereby simplifying the process or improving the yield.

According to some embodiments, the material of the insulating layer 106b may be the same as or similar to the material of the insulating layer 106a, and the forming method of the insulating layer 106b may be the same as or similar to the process of forming the insulating layer 106a, which is not repeated here.

According to some embodiments, the light shielding layer 110a may include a metal material, which may include, for example, copper (Cu), aluminum (Al), molybdenum (Mo), indium (In), ruthenium (Ru), tin (Sn), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), lead (Pb), nickel (Ni), chromium (Cr), magnesium (Mg), palladium (Pd), alloys of the above materials, other suitable metal materials, or combinations of the foregoing, but is not limited thereto. In these embodiments, the impedance of the transparent conductive material in contact therewith can be effectively reduced or the miniaturization of the opening can be improved, achieving a good light collimation effect. According to other embodiments, the light shielding layer 110a may include an organic material, which may include, for example, a black resin, other suitable organic light shielding materials, or a combination of the foregoing, but is not limited thereto.

According to some embodiments, the light shielding layer 110a may be formed by a chemical vapor deposition process, a physical vapor deposition process, an electroplating process, an electroless plating process, other suitable processes, or a combination thereof. The light shielding layer 110a may be patterned by one or more photolithography processes and/or etching processes to form the opening P1.

Referring to fig. 1C, a conductive layer 104b may be formed on the light shielding layer 110a, and the conductive layer 104b passes through the opening P1 and is electrically connected to the photosensitive element 100 u. In detail, the conductive layer 104b may be conformally formed on the light shielding layer 110a and may extend into the hole exposing the photosensitive element 100u, and the conductive layer 104b may be further formed on the side surfaces of the insulating layer 106a, the insulating layer 108a, the insulating layer 106b and the light shielding layer 110a, but not limited thereto. The conductive layer 104b may be in contact with the transparent conductive layer 101, such that the transparent conductive layer 101 may be disposed between the photosensitive element 100u and the conductive layer 104b, but is not limited thereto. In this embodiment, the conductive layer 104b may be electrically connected to the transparent conductive layer 101, that is, the conductive layer 104b may be electrically connected to the electrode of the photosensitive element 100 u. According to some embodiments, the conductive layer 104b may be used to provide a common voltage (common voltage) to the photosensitive element 100u, but is not limited thereto.

According to some embodiments, the conductive layer 104b may include a transparent conductive material, which may include a transparent conductive oxide (transparent conductive oxide, TCO), for example, may include Indium Tin Oxide (ITO), antimony zinc oxide (antimony zinc oxide, AZO), tin oxide (tin oxide, snO), zinc oxide (ZnO), indium zinc oxide (indium zinc oxide, IZO), indium gallium zinc oxide (indium gallium zinc oxide, IGZO), indium tin zinc oxide (indium tin zinc oxide, ITZO), antimony tin oxide (antimony tin oxide, ATO), other suitable transparent conductive materials, or combinations thereof, but is not limited thereto.

According to some embodiments, the conductive layer 104b may be formed by a chemical vapor deposition process, a physical vapor deposition process, an electroplating process, an electroless plating process, other suitable processes, or a combination thereof. In some embodiments, the conductive layer 104b may be patterned by one or more photolithography processes and/or etching processes, if desired, but not limited thereto.

Next, an insulating layer 106c may be formed on the conductive layer 104b, and the insulating layer 106c may be conformally formed on the conductive layer 104b and may extend into the hole exposing the photosensitive element 100 u.

According to some embodiments, the material of the insulating layer 106c may be the same as or similar to the material of the insulating layer 106a or the insulating layer 106b, and the forming method of the insulating layer 106c may be the same as or similar to the process of forming the insulating layer 106a or the insulating layer 106b, which is not repeated here.

Next, an insulating layer 108b may be formed on the insulating layer 106c, and a portion of the insulating layer 108b may also extend into the hole exposing the photosensitive element 100u, and then, a light shielding layer 110b, an insulating layer 108c, a light shielding layer 110c, and a micro-lens (micro-lens) 130 may be further formed in sequence above the insulating layer 108 b. In this embodiment, the semiconductor device further includes an insulating layer 106d, wherein the insulating layer 106d is disposed over the insulating layer 108c and the light shielding layer 110c, and a micro lens (micro-lens) 130 is formed over the insulating layer 106 d. The insulating layer 108b and the insulating layer 108c may function as a planarization layer. According to some embodiments, the microlenses 130 may partially overlap the light shielding layer 110c in a normal direction (e.g., Z direction in the drawing) of the substrate 102.

The light shielding layer 110b and the light shielding layer 110c can reduce reflection of light, for example, the light shielding layer 110b and the light shielding layer 110c can absorb light reflected back and forth between metal conductive layers, so as to achieve an anti-reflection effect or a light noise reduction effect. The light shielding layer 110b and the light shielding layer 110c can also shield light with a large angle, so as to achieve the effect of reducing the signal-to-noise ratio. As shown in fig. 1C, the light shielding layer 110b may be disposed on the light shielding layer 110a, where the light shielding layer 110b has an opening P2, and the opening P2 overlaps the opening P1. In detail, the opening P2 of the light shielding layer 110b may overlap with the opening P1 of the light shielding layer 110a in a normal direction (e.g., a Z direction in the drawing) of the substrate 102. According to some embodiments, the light shielding layer 110b may have a plurality of openings P2, and the plurality of openings P2 overlap with the plurality of openings P1, respectively. Furthermore, the light shielding layer 110c may be disposed on the light shielding layer 110b, where the light shielding layer 110c has an opening P3, and the opening P3 overlaps the opening P2. In detail, the opening P3 of the light shielding layer 110c may overlap with the opening P2 of the light shielding layer 110b in the normal direction of the substrate 102. According to some embodiments, the light shielding layer 110c may have a plurality of openings P3, and the plurality of openings P3 overlap with the plurality of openings P2, respectively.

Further, the width of the opening P2 may be, for example, greater than or equal to the width of the opening P1, and the width of the third opening P3 may be, for example, greater than or equal to the width of the second opening P2. According to some embodiments, the width of the opening P1 may be between 1 micrometer (μm) and 5 micrometers (μm) (i.e., 1 μm. Ltoreq.opening P1 has a width. Ltoreq.5 μm), but is not limited thereto. According to some embodiments, the width of the opening P2 may be between 5 micrometers (μm) and 10 micrometers (μm) (i.e., 5 μm. Ltoreq.opening P2 has a width. Ltoreq.10 μm), but is not limited thereto. According to some embodiments, the width of the opening P3 may be between 10 micrometers (μm) and 20 micrometers (μm) (i.e., 10 μm. Ltoreq.opening P3 has a width. Ltoreq.20 μm), but is not limited thereto.

According to the embodiment of the present disclosure, the widths of the openings P1, P2, and P3 refer to the maximum widths of the bottommost portions of the openings P1, P2, and P3, respectively, in a direction (for example, X direction in the drawing) perpendicular to the normal direction of the substrate 102. It should be appreciated that in accordance with embodiments of the present disclosure, the width, thickness, or height of each component, or the spacing or distance between components, may be measured using an optical microscope (optical microscope, OM), scanning electron microscope (scanning electron microscope, SEM), film thickness profilometer (α -step), ellipsometer, or other suitable means. In detail, according to some embodiments, a scanning electron microscope may be used to obtain an image of any cross-sectional structure including the components to be measured, and measure the width, thickness or height of each component, or the spacing or distance between components.

In addition, the micro-lenses 130 may be helpful for focusing light on a specific area, such as the photosensitive element 100u. As shown in fig. 1C, the microlens 130 is disposed on the photosensitive assembly 100u and overlaps the opening P1, the opening P2, and the opening P3 in the normal direction (e.g., the Z direction in the drawing) of the substrate 102. According to some embodiments, the micro lens 130 is used in combination with the openings P1, P2 and P3 having the function of collimating light, which is helpful for the miniaturization of the photosensitive element 100u, and can reduce the influence of stray capacitance on the photocurrent of the photosensitive element 100u.

According to some embodiments, the materials of the insulating layer 108b and the insulating layer 108c may be the same as or similar to those of the insulating layer 108a, and the forming method of the insulating layer 108b and the insulating layer 108c may be the same as or similar to the process of forming the insulating layer 108a, which is not repeated here.

According to some embodiments, the materials of the light shielding layer 110b and the light shielding layer 110c may be the same as or similar to those of the light shielding layer 110a, and the formation method of the light shielding layer 110b and the light shielding layer 110c may be the same as or similar to the process of forming the light shielding layer 110a, which is not repeated here. Furthermore, the light shielding layer 110b and the light shielding layer 110c may be patterned by one or more photolithography processes and/or etching processes to form the opening P2 and the opening P3, respectively.

According to some embodiments, the material of the microlens 130 may include silicon oxide, polymethyl methacrylate (PMMA), cyclic olefin polymer (cycloolefin polymer, COP), polycarbonate (PC), other suitable materials, or a combination of the foregoing, but is not limited thereto.

According to some embodiments, the microlenses 130 may be formed by a chemical vapor deposition process, a physical vapor deposition process, a coating process, a printing process, other suitable processes, or a combination thereof. And, the microlens 130 may be patterned to have a proper shape and profile by a photolithography process and/or an etching process.

As shown in fig. 1C, the formed sensing device 10A may include a substrate 102, a circuit layer 100A, a photosensitive element 100u, a light shielding layer 110A and a conductive layer 104b, wherein the circuit layer 100A may be disposed on the substrate 102, the photosensitive element 100u may be disposed on the substrate 102 and electrically connected to the circuit layer 100A, the light shielding layer 110A may be disposed on the photosensitive element 100u and has an opening P1, the opening P1 overlaps the photosensitive element 100u, the conductive layer 104b is disposed on the light shielding layer 110A, and the conductive layer 104b passes through the opening P1 and is electrically connected to the photosensitive element 100 u. According to some embodiments, the light shielding layer 110a may comprise a metal material, and the light shielding layer 110a may be electrically connected to the conductive layer 104 b. According to some embodiments, the light shielding layer 110a may comprise an organic material, and the light shielding layer 110a may be in contact with the conductive layer 104 b. According to some embodiments, the circuit layer 100A may include a thin film transistor (e.g., thin film transistor TR 1), and the photosensitive element 100u may overlap with a source electrode or a drain electrode (e.g., conductive layer 104 a) of the thin film transistor TR 1. According to some embodiments, the photosensitive element 100u may be in contact with a source electrode or a drain electrode (e.g., the conductive layer 104 a) of a thin film transistor (e.g., the thin film transistor TR 1). According to some embodiments, the sensing device 10A may further include a transparent conductive layer 101, the transparent conductive layer 101 may be disposed between the photosensitive element 100u and the conductive layer 104 b.

Next, referring to fig. 2, fig. 2 is a schematic cross-sectional view of a sensing device 10B according to other embodiments of the disclosure. It should be understood that for clarity of illustration, some components of the sensing device 10B are omitted from the figures, only some components being schematically illustrated. According to some embodiments, additional features may be added to the sensing device 10B described below. According to other embodiments, some features of the sensing device 10B described below may be substituted or omitted. It should be understood that the same or similar components or elements as those described above will be denoted by the same or similar reference numerals, and materials, manufacturing methods and functions thereof will be the same or similar to those described above, so that the description thereof will not be repeated.

The sensing device 10B shown in fig. 2 is substantially similar to the sensing device 10A, and the difference between them includes that the sensing device 10B further includes a conductive layer 104a1, an insulating layer 106a1 and an insulating layer 108a1 disposed between the circuit layer 100A and the photosensitive element 100u, and the photosensitive element 100u can be electrically connected to the thin film transistor of the circuit layer 100A through the additional conductive layer 104a 1. Specifically, in this embodiment, after the conductive layer 104a and the insulating layer 106a are formed, the insulating layer 108a1 may be formed over the conductive layer 104a and the insulating layer 106a, the insulating layer 108a1 may cover the conductive layer 104a and the insulating layer 106a, and the insulating layer 108a1 may cover the thin film transistors TR1, TR2, and TR3. Next, a portion of the insulating layer 108a1 is removed by a patterning process to form a via V2, and then the insulating layer 106a1 and the conductive layer 104a1 are formed on the insulating layer 108a1 and in the via V2. As shown in fig. 2, a portion of the conductive layer 104a1 may be electrically connected to the conductive layer 104a through the insulating layer 108a1, and the conductive layer 104a may be electrically connected to the semiconductor layer of the thin film transistor TR1 through the gate dielectric layer and the dielectric layer, for example. Next, the photosensitive element 100u may be formed on the conductive layer 104a1, and the photosensitive element 100u may be electrically connected to the thin film transistor of the circuit layer 100A through the conductive layer 104a1 and the conductive layer 104 a.

In addition, the sensing device 10B may include a plurality of photosensitive elements 100u electrically connected to the conductive layer 104a1, and the conductive layer 104a1 may serve as an electrode of the photosensitive elements 100 u. Furthermore, the conductive layer 104b may be electrically connected to the transparent conductive layers 101 disposed on the photosensitive element 100 u. The photosensitive device 10B also has a plurality of openings P1, a plurality of openings P2 and a plurality of openings P3 corresponding to the plurality of photosensitive elements 100 u. Furthermore, as shown in fig. 2, according to some embodiments, the micro-lens 130 may be directly disposed on the insulating layer 108c and the light shielding layer 110c, the insulating layer 106d may be optionally omitted, and the micro-lens 130 may partially overlap with the light shielding layer 110c in a normal direction (e.g., a Z direction in the drawing) of the substrate 102. In some embodiments, the number of photosensitive elements 100u may be, for example, but not limited to, one.

According to some embodiments, the materials of the conductive layer 104a1 and the insulating layer 106a1 may be the same as or similar to those of the conductive layer 104a and the insulating layer 106a, and the forming method of the conductive layer 104a1 and the insulating layer 106a1 may be the same as or similar to the process of forming the conductive layer 104a and the insulating layer 106a, which will not be repeated here.

Next, referring to fig. 3A to 3C, fig. 3A to 3C show schematic cross-sectional views of the sensing device 10C at different process stages according to other embodiments of the present disclosure. It should be appreciated that, according to some embodiments, additional operational steps may be provided before, during, and/or after the fabrication of the sensing device 10C. According to some embodiments, some of the operational steps described may be replaced or omitted. According to some embodiments, the order of some of the described operational steps is interchangeable. Further, it should be understood that, for clarity of illustration, some components of the sensing device 10C are omitted from the figures, only some components being schematically illustrated. According to some embodiments, additional features may be added to the sensing device 10C described below. According to other embodiments, some features of the sensing device 10C described below may be substituted or omitted.

First, referring to fig. 3A, a substrate 102 is provided. Next, a circuit layer 100A may be formed on the substrate 102. It should be understood that although only the thin film transistor TR1 is shown in the drawings, the circuit layer 100A of the sensing device 10B may further have other thin film transistors. The circuit layer 100A may include the conductive layer 104a, and in particular, according to some embodiments, a portion of the gate dielectric layer and the dielectric layer in the circuit layer 100A may be removed by a patterning process to form the via V1, and then the conductive layer 104a is formed in the via V1. Next, a first type semiconductor layer 100a of the photosensitive element 100u may be formed on the conductive layer 104 a. In detail, the first type semiconductor layer 100a may be conformally formed on the conductive layer 104 a. Furthermore, the first type semiconductor layer 100a and the conductive layer 104a may be patterned together to form a discontinuous structure, for example.

Referring to fig. 3B, an insulating layer 106a1 may be formed on the first type semiconductor layer 100a, and a portion of the insulating layer 106a1 may be removed by a patterning process to form a plurality of openings 106P, wherein a portion of the first type semiconductor layer 100a may be exposed by the openings 106P. Then, an intrinsic semiconductor layer 100b and a second type semiconductor layer 100c may be sequentially formed on the first type semiconductor layer 100a. The insulating layer 106a1 has a plurality of openings 106P, and the intrinsic semiconductor layer 100b may contact the first type semiconductor layer 100a through the openings 106P. In detail, the photosensitive element 100u may include a first type semiconductor layer 100a, a second type semiconductor layer 100c, and an intrinsic semiconductor layer 100b disposed between the first type semiconductor layer 100a and the second type semiconductor layer 100c, and a portion of the insulating layer 106a1 may be disposed between the first type semiconductor layer 100a and the intrinsic semiconductor layer 100 b.

Next, referring to fig. 3C, a transparent conductive layer 101 may be formed on the second type semiconductor layer 100C of the photosensitive element 100u. For example, a plurality of transparent conductive layers 101 may be formed on the second type semiconductor layer 100 c. Thereafter, an insulating layer 106a2 and an insulating layer 108a may be formed over the photosensitive element 100u. The insulating layer 106a2 may be conformally formed on the circuit layer 100A, the photosensitive element 100u, and the transparent conductive layer 101, the insulating layer 106a2 may cover the conductive layer 104a and the first type semiconductor layer 100A or may further contact the insulating layer 106a1, and then the insulating layer 108a may be formed over the insulating layer 106a 2.

Next, a light shielding layer 110a may be formed on the insulating layer 108 a. Furthermore, an opening P1 may be formed in the light shielding layer 110a, the opening P1 and the photosensitive element 100u may overlap in a normal direction (e.g., a Z direction in the drawing) of the substrate 102, and then the insulating layer 106a and the insulating layer 108a may be patterned through the opening P1 to expose the photosensitive element 100u. In detail, a portion of the light shielding layer 110a may be removed to form the opening P1, and then a patterning process is performed on the insulating layer 106a and the insulating layer 108a with the light shielding layer 110a as a mask, so as to remove the insulating layer 106a and the insulating layer 108a under the opening P1 to form a hole exposing a portion of the photosensitive element 100u (e.g., the transparent conductive layer 101 as an electrode of the photosensitive element 100 u). Then, a conductive layer 104b is formed on the light shielding layer 110a, and the conductive layer 104b passes through the opening P1 and is electrically connected to the photosensitive element 100u.

Next, an insulating layer 106c may be formed on the conductive layer 104b, and the insulating layer 106c may be conformally formed on the conductive layer 104b and may extend into the hole exposing the photosensitive element 100 u. Next, an insulating layer 108b may be formed on the insulating layer 106c, a portion of the insulating layer 108b may also extend into the hole exposing the photosensitive element 100u, and then, a light shielding layer 110b, an insulating layer 108c, a light shielding layer 110c, and an insulating layer 106d may be sequentially formed over the insulating layer 108b, and an insulating layer 106d may be formed over the insulating layer 108c and the light shielding layer 110c, and a microlens 130 may be formed over the insulating layer 106 d.

It should be noted that, in this embodiment, the plurality of transparent conductive layers 101 may be in contact with the same photosensitive element 100u (e.g., the second type semiconductor layer 100 c), so that the photosensitive element 100u has a smaller number of edges, thereby reducing the occurrence of problems such as structural defects or leakage currents at the edges.

Next, referring to fig. 4A to 4C, fig. 4A to 4C are schematic cross-sectional views of a portion of components of a sensing device at different process stages according to some embodiments of the present disclosure. Specifically, fig. 4A to 4C show schematic partial cross-sectional views of the sensing device to further illustrate the detailed structure of the photosensitive assembly 100 u.

As shown in fig. 4A, after sequentially forming the first type semiconductor layer 100a, the intrinsic semiconductor layer 100b, and the second type semiconductor layer 100c on the conductive layer 104A, the transparent conductive layer 101 may be formed on the second type semiconductor layer 100c, and the transparent conductive layer 101 may be patterned by one or more photolithography processes and/or etching processes such that an edge of the transparent conductive layer 101 is tapered compared to an edge of the photosensitive element 100u (e.g., an edge of the second type semiconductor layer 100 c). As described above, the insulating layer 106a, the insulating layer 108a, the insulating layer 106b, and the light shielding layer 110a may be formed on the photosensitive element 100u and the transparent conductive layer 101.

As shown in fig. 4B, the insulating layer 106B, the insulating layer 108, and the insulating layer 106a can be patterned through the opening P1 of the light shielding layer 110 a. In the embodiment, when the insulating layer 106a is patterned, a portion of the photosensitive element 100u (e.g., the second type semiconductor layer 100c and the intrinsic semiconductor layer 100 b) may be further removed, specifically, the width of the transparent conductive layer 101 is smaller than the width of the opening P1, the transparent conductive layer 101 may be used as a mask, and a portion of the second type semiconductor layer 100c and the intrinsic semiconductor layer 100b may be removed to form the recess RS in the photosensitive element 100 u. The recess RS at least partially surrounds the transparent conductive layer 101. The recess RS may extend downward from the transparent conductive layer 101 to the intrinsic semiconductor layer 100b.

Referring to fig. 4C, a conductive layer 104b may be formed on the light shielding layer 110a, and the conductive layer 104b passes through the opening P1 to be electrically connected to the photosensitive element 100u, wherein the conductive layer 104b is formed on the transparent conductive layer 101 and electrically connected to the transparent conductive layer 101, and a portion of the conductive layer 104b is formed in the recess RS. In detail, the conductive layer 104b may be conformally formed on the light shielding layer 110a and may extend into the hole and the recess RS exposing the photosensitive element 100u, the conductive layer 104b may be formed on the side surfaces of the insulating layer 106a, the insulating layer 108a, the insulating layer 106b and the light shielding layer 110a, and the conductive layer 104b may partially extend into the second type semiconductor layer 100c and the intrinsic semiconductor layer 100b of the photosensitive element 100 u.

As shown in fig. 4C, in a cross section of the sensing device, an edge included in the transparent conductive layer 101 and an edge included in the photosensitive element are adjacent to each other and spaced apart from each other by a distance according to some embodiments. For example, the first edge E1 of the transparent conductive layer 101 and the first edge E1 of the photosensitive element 100u (e.g., the edge of the second type semiconductor layer 100 c) are separated from each other by a first distance d1, the second edge E2 of the transparent conductive layer 101 and the second edge E2 of the photosensitive element 100u (e.g., the other edge of the second type semiconductor layer 100 c) are separated from each other by a second distance d2, the first edge E1 of the transparent conductive layer 101 is opposite to the second edge E2, and the first edge E1 of the photosensitive element 100u is opposite to the second edge E2. In the present embodiment, the second distance d2 may be different from the first distance d1, but is not limited thereto.

Referring next to fig. 5A to 5C, fig. 5A to 5C are schematic cross-sectional views of a portion of components of a sensing device at different process stages according to further embodiments of the present disclosure. Specifically, fig. 5A to 5C show schematic partial cross-sectional views of the sensing device to further illustrate the detailed structure of the photosensitive assembly 100u.

As shown in fig. 5A, after forming the first type semiconductor layer 100a and the intrinsic semiconductor layer 100b of the photosensitive element 100u on the conductive layer 104a, the insulating layer 106a, the insulating layer 108a, the insulating layer 106b, and the light shielding layer 110a may be formed on the first type semiconductor layer 100a and the intrinsic semiconductor layer 100b of the photosensitive element 100u, and then a portion of the photosensitive element 100u, the insulating layer 106a, the insulating layer 108a, and the insulating layer 106b may be patterned through the opening P1 of the light shielding layer 110a to expose the photosensitive element 100u. In detail, a portion of the insulating layer 106a, the insulating layer 108a, and the insulating layer 106b may be removed by a patterning process to expose a portion of the intrinsic semiconductor layer 100 b.

Referring to fig. 5B, a portion of the exposed intrinsic semiconductor layer 100B may be doped to form a second type semiconductor layer 100c. In this embodiment, the light shielding layer 110a may be patterned to form the opening P1, and then the ion implantation process may be performed on the intrinsic semiconductor layer 100b through the opening P1 to form the second type semiconductor layer 100c. Since the second type semiconductor layer 100c is formed after the opening P1, in this embodiment, the range of the second type semiconductor layer 100c corresponds to the opening P1, and the width of the second type semiconductor layer 100c may be smaller than the width of the intrinsic semiconductor layer 100 b.

Referring to fig. 5C, a conductive layer 104b may be formed on the light shielding layer 110a, and the conductive layer 104b may pass through the opening P1 to electrically connect with the photosensitive element 100u, and the conductive layer 104b may contact with the second type semiconductor layer 100C. In the present embodiment, the conductive layer 104b may further contact the intrinsic semiconductor layer 100b, but is not limited thereto. In addition, in this embodiment, the transparent conductive layer 101 may not be formed on the photosensitive element 100 u.

In summary, according to the embodiments of the present disclosure, the manufacturing method of the sensing device provided can integrate a part of the structures of the components in the sensing device, for example, integrate a part of the structures of the photosensitive component and the optical component or integrate a part of the structures of the photosensitive component and the circuit layer, reduce the number of masks and steps used in the process, simplify the process or improve the yield. According to the embodiments of the present disclosure, the sensing device manufactured by the manufacturing method can reduce the equivalent capacitance of the photosensitive component, thereby improving the sensitivity of the sensing device or enhancing the overall performance of the sensing device. In addition, according to some embodiments, the structural design of the photosensitive component can further reduce the occurrence probability of leakage current or reduce the capacitance value, thereby improving the performance of the photosensitive component.

Although embodiments of the present disclosure and their advantages have been disclosed above, it should be understood that various changes, substitutions and alterations can be made herein by those skilled in the art without departing from the spirit and scope of the disclosure. Features of the embodiments of the present disclosure may be mixed and matched at will without departing from the spirit or conflict of the present disclosure. Furthermore, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification, and those of skill in the art will appreciate from the present disclosure that any process, machine, manufacture, composition of matter, means, methods and steps which may be practiced in the present disclosure or with respect to the presently existing or future developed that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein. Accordingly, the present disclosure is intended to cover such processes, machines, manufacture, compositions of matter, means, methods, or steps. The scope of the present disclosure is defined by the appended claims. Not all of the objects, advantages, features of the disclosure are required to be achieved by any one embodiment or claim of the disclosure.

Claims

1. A sensing device, comprising:

a substrate;

a circuit layer arranged on the substrate;

the photosensitive component is arranged on the substrate and is electrically connected with the circuit layer;

the shading layer is arranged on the photosensitive component and provided with an opening, and the opening is overlapped with the photosensitive component; and

the conductive layer is arranged on the shading layer, passes through the opening and is electrically connected with the photosensitive component.

2. The sensor device of claim 1, wherein the light shielding layer comprises a metal material and is electrically connected to the conductive layer.

3. The sensing device of claim 1, wherein the light shielding layer (comprising an organic material and contacting the conductive layer).

4. The device of claim 1, wherein the circuit layer comprises a thin film transistor and the photosensitive element overlaps a source electrode or a drain electrode of the thin film transistor.

5. The device of claim 4, wherein the photosensitive element is in contact with the source electrode or the drain electrode of the thin film transistor.

6. The sensor device of claim 1, further comprising a transparent conductive layer disposed between the photosensitive member and the conductive layer.

7. The sensor device of claim 6, wherein in a cross section of the sensor device, a first edge of the transparent conductive layer and a first edge of the photosensitive element are adjacent to each other and separated by a first distance.

8. The sensor device of claim 6, wherein the photosensitive member has a recess at least partially surrounding the transparent conductive layer.

9. The sensing device of claim 6, wherein the conductive layer is disposed on and electrically connected to the transparent conductive layer, and a portion of the conductive layer is disposed in the recess.

10. The device of claim 1, further comprising an insulating layer disposed on the circuit layer, wherein the photosensitive element comprises a first type semiconductor layer, a second type semiconductor layer, and an intrinsic semiconductor layer disposed between the first type semiconductor layer and the second type semiconductor layer, wherein a portion of the insulating layer is disposed between the first type semiconductor layer and the intrinsic semiconductor layer.

11. The device of claim 10, wherein the insulating layer has a plurality of openings, and the intrinsic semiconductor layer is in contact with the first type semiconductor layer through the plurality of openings.

12. A method for manufacturing a sensing device, comprising:

providing a substrate;

forming a circuit layer on the substrate;

forming a photosensitive component on the circuit layer;

forming a first insulating layer on the photosensitive component;

forming a light shielding layer on the first insulating layer;

forming an opening in the light shielding layer, wherein the opening is overlapped with the photosensitive component;

patterning the first insulating layer through the opening to expose the photosensitive element; and

a conductive layer is formed on the light shielding layer, and the conductive layer passes through the opening and is electrically connected with the photosensitive component.

13. The method of claim 12, wherein forming the photosensitive element on the circuit layer comprises:

forming a first type semiconductor layer on the circuit layer;

forming an intrinsic semiconductor layer on the first type semiconductor layer; and

a second type semiconductor layer is formed on the intrinsic semiconductor layer.

14. The method of manufacturing a sensor device of claim 13, further comprising:

forming a transparent conductive layer on the second type semiconductor layer; and

removing a portion of the second type semiconductor layer and a portion of the intrinsic semiconductor layer to form a recess in the photosensitive element.

15. The method of claim 14, wherein the conductive layer is formed on the transparent conductive layer and a portion of the conductive layer is formed in the recess.

16. The method of claim 13, further comprising, after forming the intrinsic semiconductor layer on the first type semiconductor layer:

removing a portion of the first insulating layer to expose a portion of the intrinsic semiconductor layer; and

the portion of the intrinsic semiconductor layer is doped to form the second type semiconductor layer.

17. The method of manufacturing a sensor device of claim 13, further comprising:

forming a second insulating layer on the first type semiconductor layer; and

and removing a part of the second insulating layer to form a plurality of openings, wherein the intrinsic semiconductor layer is contacted with the first type semiconductor layer through the openings.