CN117637560A - Wafer conveying blade and wafer conveying device - Google Patents

Wafer conveying blade and wafer conveying device Download PDF

Info

Publication number
CN117637560A
CN117637560A CN202311596139.2A CN202311596139A CN117637560A CN 117637560 A CN117637560 A CN 117637560A CN 202311596139 A CN202311596139 A CN 202311596139A CN 117637560 A CN117637560 A CN 117637560A
Authority
CN
China
Prior art keywords
wafer
clamping
blade
side wall
wafer transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311596139.2A
Other languages
Chinese (zh)
Inventor
张坤宇
金柱炫
刘凯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xi'an Xinxin Material Technology Co ltd
Xian Eswin Material Technology Co Ltd
Original Assignee
Xi'an Xinxin Material Technology Co ltd
Xian Eswin Material Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xi'an Xinxin Material Technology Co ltd, Xian Eswin Material Technology Co Ltd filed Critical Xi'an Xinxin Material Technology Co ltd
Priority to CN202311596139.2A priority Critical patent/CN117637560A/en
Publication of CN117637560A publication Critical patent/CN117637560A/en
Pending legal-status Critical Current

Links

Abstract

The invention provides a wafer transfer blade and a wafer transmission device, wherein the wafer transfer blade comprises: a blade body for carrying a wafer; the clamping assembly is used for clamping the wafer to limit the wafer, and comprises at least two clamping parts connected to the blade main body, wherein the at least two clamping parts are distributed at intervals along the circumferential direction of the wafer so as to mutually match to form a clamping space capable of accommodating the wafer. The wafer conveying blade and the wafer conveying device can convey wafers more stably so as to control wafer particles and improve the yield of epitaxial wafers.

Description

Wafer conveying blade and wafer conveying device
Technical Field
The present invention relates to the field of semiconductor processing and manufacturing technologies, and in particular, to a wafer conveying blade and a wafer conveying device.
Background
In the epitaxial production process, a silicon source gas in a process chamber of a high-temperature closed reaction furnace is generally injected into the surface of a monocrystalline wafer by using a chemical vapor deposition method, and an epitaxial layer is grown on the upper surface of the wafer, so that the manufactured wafer is called an epitaxial wafer. Compared with a polished wafer, the epitaxial wafer has the advantages of fewer surface defects, capability of controlling the thickness and the resistivity of an epitaxial layer, and the like.
With the rapid development of the technology in the semiconductor industry, the requirements on the quality of particles (particles) of epitaxial wafers are also higher and higher, and particularly, the requirements on the particles of the epitaxial wafers are more stringent for logic devices. Therefore, maintaining cleanliness of the process chamber of the epitaxial reactor is a critical factor affecting the quality and yield of the epitaxial wafers.
Typically, during an epitaxial growth process, wafers are transported while being transferred to a process chamber for loading, the wafers are loaded onto a wafer transfer blade for transport. In the transportation process, the wafer deforms due to thermal stress, so that the wafer is not tightly clamped in the loading area of the wafer conveying blade, and the wafer shakes on the conveying blade to rub with the conveying blade, so that particle impurities and scratches are generated. Moreover, over time, the transfer blade loading area may accumulate a layer of white contaminants, which may cause increased particle size at the wafer backside contact points, thereby affecting wafer yield.
Disclosure of Invention
In order to solve the above-mentioned problems, embodiments of the present disclosure provide a wafer transfer blade and a wafer transfer device, which can transfer wafers more stably, so as to control wafer particles and improve the yield of epitaxial wafers.
The technical scheme provided by the invention is as follows:
according to a first aspect of the present disclosure, there is provided a wafer transfer blade comprising:
a blade body for carrying a wafer; and
The clamping assembly is used for clamping the wafer to limit the wafer, and comprises at least two clamping parts connected to the blade main body, wherein the at least two clamping parts are distributed at intervals along the circumferential direction of the wafer so as to mutually match to form a clamping space capable of accommodating the wafer.
The clamping assembly comprises four clamping parts, wherein two groups of clamping parts are formed into two groups of clamping units, and the two groups of clamping units are symmetrically distributed on two diametrically opposite sides of the wafer with respect to the center of the wafer.
Illustratively, the blade body includes a base portion for carrying the wafer and a blade portion for connecting the blade portion to a power assembly that provides a power for transmission; the blade part is connected to one side of the base part along a first direction, the blade part has an extension length in the first direction, and the symmetry axes of the two groups of clamping assemblies are straight lines passing through the center of the wafer and parallel to the first direction.
In an exemplary embodiment, in each group of the clamping units, the two clamping portions are a first clamping portion and a second clamping portion which are arranged at intervals in the first direction; wherein the first clamping part is positioned at one end of the blade part, which is close to the base part, so as to clamp one side edge of the wafer, which is close to the base part in the first direction; the second clamping portion is located at one end of the blade portion away from the base portion to clamp a side edge of the wafer away from the base portion in the first direction.
The first clamping portions of the two groups of clamping units have a first spacing distance in a second direction, the second clamping portions of the two groups of clamping units have a second spacing distance in the second direction, the first spacing distance is smaller than or equal to the second spacing distance, and the second direction is parallel to the wafer and perpendicular to the first direction.
Illustratively, the clamping portion is connected to the blade body as an integrally formed structure.
Illustratively, the clamp is configured to include a collet portion and a side gusset portion; wherein the shoe part is used for supporting the bottom surface of the wafer; the side wall part is used for stopping the periphery of the peripheral surface of the wafer, one end of the bottom support part is connected to the blade main body, and the side wall part is connected to one end, far away from the blade main body, of the bottom support part, so that the inner side surface of the side wall part is matched with the top surface of the bottom support part to form a containing groove for clamping the edge of the wafer.
Illustratively, the connection transition position between the inner side surface of the side wall part and the top surface of the shoe part is configured as an arc transition shape adapted to the edge shape of the wafer; alternatively, the inner side surface of the side wall part is configured as an arc curved surface adapted to the edge shape of the wafer.
Illustratively, the side gusset portion includes top and bottom ends that are opposed in a third direction, the third direction being perpendicular to the bearing surface of the blade body, the bottom end being connected to the shoe portion; wherein the inner side surface of the side wall portion is configured as an inclined surface, and gradually inclined from the bottom end to the top end in a direction radially away from the center of the wafer.
Illustratively, the inner side of the side wall portion is inclined at an angle of 5 to 10 ° with respect to the third direction.
According to a second aspect of the present disclosure, there is provided a wafer transfer apparatus comprising a wafer transfer blade as described above.
The beneficial effects of the present disclosure are as follows:
in the wafer conveying blade and the wafer conveying device provided by the embodiment of the disclosure, the wafer conveying blade comprises a blade body and a clamping assembly, the blade body is used for bearing a wafer, the clamping assembly is used for clamping the wafer to limit the wafer, the clamping assembly comprises at least two clamping parts connected to the blade body, and the at least two clamping parts are configured to be distributed at intervals along the circumferential direction of the wafer so as to mutually cooperate to form a clamping space capable of accommodating the wafer. Like this, when conveying the wafer through this wafer conveying blade, the wafer bears on the blade main part, and at least two clamping parts can be around the circumference at the wafer, so that the wafer holding is in the clamping space that encloses each other by two at least clamps and close, thereby by the centre gripping subassembly centre gripping spacing, avoid the wafer to remove relative this wafer conveying blade in the wafer conveying process, reduce the rocking of wafer on this wafer conveying blade, reduce the contact of wafer temperature variation emergence deformation in-process and blade main part, make granule and the scratch that the wafer produced reduce, thereby improve epitaxial wafer's yield.
Drawings
FIG. 1 is a schematic diagram showing a wafer transfer process in an epitaxial growth apparatus;
FIG. 2 is a schematic diagram showing the wafer deformed during transfer to contact the transfer blade;
FIG. 3 is a schematic perspective view of a wafer carrier blade according to an embodiment of the disclosure;
FIG. 4 is a front view of a wafer carrier blade according to one embodiment of the present disclosure;
FIG. 5 shows a cross-sectional view E-E' of FIG. 4;
FIG. 6 is a schematic perspective view of a clamping portion of a wafer transfer blade according to an embodiment of the present disclosure;
fig. 7 illustrates a front view of a clamping portion in a wafer transfer blade provided in an embodiment of the present disclosure.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are within the scope of the present disclosure, based on the described embodiments of the present disclosure.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
Before explaining the embodiments of the present disclosure in detail, the following description is made on the related art:
in the epitaxial production process, a silicon source gas in a process chamber of a high-temperature closed reaction furnace is generally injected into the surface of a monocrystalline wafer by using a chemical vapor deposition method, and an epitaxial layer is grown on the upper surface of the wafer, so that the manufactured wafer is called an epitaxial wafer. Compared with a polished wafer, the epitaxial wafer has the advantages of fewer surface defects, capability of controlling the thickness and the resistivity of an epitaxial layer, and the like.
With the rapid development of the technology in the semiconductor industry, the requirements on the quality of particles (particles) of epitaxial wafers are also higher and higher, and particularly, the requirements on the particles of the epitaxial wafers are more stringent for logic devices. Therefore, maintaining cleanliness of the process chamber of the epitaxial reactor is a critical factor affecting the quality and yield of the epitaxial wafers.
Fig. 1 is a schematic structural view of an epitaxial growth apparatus (EPI Reactor). The epitaxial growth apparatus mainly comprises a front end module 10, a load port 20, a load lock unit 30, a transfer unit 40, and a process chamber 50, wherein a wafer transfer blade within the front end module 10 transfers wafers from the load port 20 to the load lock unit 30, and the load lock unit 30 performs vacuum pumping and nitrogen backfilling. The wafer transfer blade in the transfer unit 40 transfers the wafer in the load lock unit 30 into the process chamber 50 for epitaxial growth, and after growth, the wafer is returned along the original path.
The detailed flow of the wafer from the chamber of the transfer unit 40 into the process chamber 50 is as follows: the slit door at the connection between the chamber of the transfer unit 40 and the process chamber 50 is opened, the wafer transfer blade carries the wafer from the chamber of the transfer unit 40 through the slit door into the process chamber 50, and the wafer is lifted up by three lift pins in the process chamber 50, and then the wafer transfer blade returns from the slit door to the transfer chamber, closing the slit door. The susceptor in the process chamber 50 is raised to carry the wafer.
During the transfer of wafers from the chamber of the transfer unit 40 to the process chamber 50 for loading, the wafers are loaded on the transfer blade for transport. In the transportation process, the wafer is deformed due to thermal stress, so that the wafer is not tightly clamped in the loading area of the conveying blade, and the wafer shakes on the conveying blade to rub with the conveying blade, so that particle impurities and scratches are generated. Moreover, over time, the transfer blade loading area may accumulate a layer of white contaminants, which may cause increased particle size at the wafer backside contact points, thereby affecting wafer yield.
In addition, as shown in fig. 2, when the wafer 1 is transferred from the chamber of the normal temperature transfer unit 40 to the high temperature process chamber 50 on the transfer blade 60, it is affected by thermal stress, thereby causing bending deformation of the wafer 1. The edge region of the wafer 1 is deformed to come into contact with the transfer blade 60, thereby causing particle aggregation at the edge portion of the wafer 1.
In order to improve the above problems, embodiments of the present disclosure provide a wafer transfer blade and a wafer transfer apparatus, which can transfer wafers more stably to control wafer particles and improve the yield of epitaxial wafers.
As shown in fig. 3, a wafer transfer blade provided in an embodiment of the present disclosure includes:
a blade body 100 for carrying a wafer 1; and
The clamping assembly 200 is used for clamping the wafer 1 to limit the wafer 1, the clamping assembly 200 comprises at least two clamping portions 210 connected to the blade main body 100, and the at least two clamping portions 210 are configured to be distributed at intervals along the circumferential direction of the wafer 1 so as to form a clamping space capable of accommodating the wafer 1 in a mutually matched manner.
In the above-mentioned scheme, the wafer transfer blade includes a blade body 100 and a clamping assembly 200, the blade body 100 is used for carrying a wafer 1, the clamping assembly 200 is used for clamping the wafer 1 to limit the wafer 1, wherein the clamping assembly 200 includes at least two clamping portions 210 connected to the blade body 100, and the at least two clamping portions 210 are configured to be distributed at intervals along the circumferential direction of the wafer 1, so as to mutually cooperate to form a clamping space capable of accommodating the wafer 1.
Thus, when the wafer 1 is transferred by the wafer transfer blade, the wafer 1 is carried on the blade main body 100, and at least two clamping portions 210 can surround the circumference of the wafer 1, so that the wafer 1 is accommodated in a clamping space formed by mutually enclosing at least two clamping portions, and is clamped and limited by the clamping assembly 200, the wafer 1 is prevented from moving relative to the wafer transfer blade in the transfer process of the wafer 1, the shaking of the wafer 1 on the wafer transfer blade is reduced, the contact between the wafer 1 and the blade main body 100 in the deformation process caused by the temperature change of the wafer 1 is reduced, and particles and scratches generated by the wafer 1 are reduced, so that the yield of the epitaxial wafer 1 is improved.
In some exemplary embodiments of the present disclosure, the clamping assembly 200 includes four clamping portions 210, each of the four clamping portions 210 is disposed in a group of two clamping units, and the two clamping units are symmetrically disposed on two diametrically opposite sides of the wafer 1 with respect to a center of the wafer 1.
As shown in fig. 4, two groups of clamping units are a first clamping unit 200A and a second clamping unit 200B, respectively, and the first clamping unit 200A and the second clamping unit 200B are symmetrically distributed on two opposite sides of the wafer 1 in the radial direction.
By adopting the above scheme, the clamping assembly 200 is designed into four clamping portions 210, and the four clamping portions 210 are distributed on two opposite sides of the wafer 1 in the radial direction symmetrically, so that the clamping stability of the wafer 1 can be improved.
It will be understood that in other embodiments, the number of the clamping portions 210 is not limited to four, but may be two, three or more. In order to ensure stability of clamping the wafer 1, the plurality of clamping portions 210 are preferably symmetrically distributed around the circumferential periphery of the wafer 1.
In some exemplary embodiments of the present disclosure, as shown in fig. 3 and 4, the blade body 100 includes a base 110 and a blade 120, the blade 120 is configured to carry the wafer 1, and the base 110 is configured to connect the blade 120 to a power assembly that can provide power for transmission. The blade 120 is connected to one side of the base 110 along a first direction X, and the blade 120 has an extension length in the first direction X, and the symmetry axes a of the two sets of clamping assemblies 200 are straight lines passing through the center of the wafer 1 and parallel to the first direction X.
In the above-mentioned aspect, the carrying area of the wafer 1 is mainly located on the blade 120, and the blade 120 may be configured to have an extension length along the first direction X, which is, in some embodiments, the conveying direction of the wafer 1. The two groups of clamping assemblies 200 are symmetrically distributed about a straight line parallel to the first direction X and passing through the center of the wafer 1, so as to further improve the stability of the wafer 1 during the conveying process.
In some exemplary embodiments of the present disclosure, as shown in fig. 4, in each group of the clamping units, two clamping portions 210 are a first clamping portion 211 and a second clamping portion 212, respectively, which are disposed at intervals in the first direction X; wherein the first clamping portion 211 is located at one end of the blade portion 120 near the base portion 110, so as to clamp one side edge of the wafer 1 near the base portion 110 in the first direction X; the second clamping portion 212 is located at an end of the blade portion 120 away from the base portion 110 to clamp a side edge of the wafer 1 away from the base portion 110 in the first direction X.
By adopting the above scheme, when the first direction X is the direction in which the wafer 1 is transferred by the wafer transfer blade, the wafer 1 is more likely to deviate in the first direction X during the transfer process in the first direction X, so that the first clamping portion 211 and the second clamping portion 212 distributed at intervals along the first direction X may be disposed in each group of clamping units, so as to effectively limit the wafer 1 in the first direction X and prevent the wafer 1 from deviating.
In addition, the two groups of clamping units are symmetrical about the symmetry axis a parallel to the first direction X, and each group of clamping units comprises a first clamping part 211 and a second clamping part 212 which are spaced apart in the first direction X, so that the wafer 1 can be effectively clamped and limited in both the first direction X and the second direction, and the conveying stability is good. Taking the direction shown in fig. 4 as an example, the first direction X is the front-back direction during the conveying process of the wafer 1, the second direction is the left-right direction of the wafer 1, and the four clamping portions 210 can clamp the wafer 1 in four directions of front, back, left and right along the circumference of the wafer 1, so as to effectively clamp and limit the wafer 1.
In some exemplary embodiments of the present disclosure, as shown in fig. 4, the first clamping portions 211 of the two groups of clamping units have a first separation distance D1 therebetween in a second direction Y, and the second clamping portions 212 of the two groups of clamping units have a second separation distance D2 therebetween in the second direction Y, wherein the first separation distance D1 is less than or equal to the second separation distance D2, and the second direction Y is parallel to the wafer 1 and perpendicular to the first direction X.
By adopting the above scheme, taking the direction shown in fig. 4 as an example, taking the first direction X as the front-back direction in the process of conveying the wafer 1, the second direction Y is the left-right direction of the wafer 1, the two groups of clamping units are symmetrically located at the left and right sides of the wafer 1, the left-right spacing distance between the first clamping portions 211 in the two groups of clamping units is the first spacing distance D1, the left-right spacing distance between the second clamping portions 212 in the two groups of clamping units is the second spacing distance D2, and because the second clamping portions 212 are arranged close to the base 110, the second spacing distance D2 can be larger than the first spacing distance D1 in combination with the installation space of the second clamping portions 212, and the spacing distance between the first clamping portions 211 and the spacing distance between the second clamping portions 212 between the two groups of clamping units are different, so that the wafer 1 can be clamped and limited from different directions and different angles, and the conveying stability is facilitated.
It will be understood, of course, that in other embodiments not shown, the first separation distance D1 may be less than or equal to the second separation distance D2.
In some exemplary embodiments of the present disclosure, the clamping portion 210 is connected with the blade body 100 as an integrally formed structure. In this way, the clamping portion 210 may be integrally formed with the blade body 100 during the process, that is, the clamping portion 210 may be fixedly connected with the blade body 100, so that contamination caused by other connection methods (for example, a welding connection method) may be reduced, and particle contamination may be reduced.
It will be understood that the clamping portion 210 may be connected to the blade body 100 by other connection means. For example, in some embodiments, the clamping portions 210 may be movably or telescopically connected to the blade body 100, so that a clamping space defined by at least two of the clamping portions 210 is adjustable to accommodate wafers 1 of different sizes.
In some exemplary embodiments of the present disclosure, as shown in fig. 4 and 5, the clamping portion 210 is configured to include a collet portion 201 and a side gusset portion 202; wherein the bottom support portion 201 is used for supporting the bottom surface of the wafer 1; the side wall portion 202 is used for stopping the periphery of the peripheral surface of the wafer 1, one end of the bottom support portion 201 is connected to the blade main body 100, the side wall portion 202 is connected to one end of the bottom support portion 201 away from the blade main body 100, so that an inner side surface 202a of the side wall portion 202 cooperates with a top surface 201a of the bottom support portion 201 to form a containing groove A1 for clamping the edge of the wafer 1.
By adopting the above scheme, the clamping portion 210 is configured to include the bottom support portion 201 and the side wall portion 202, and the holding groove A1 is formed by matching the bottom support portion 201 with the side wall portion 202, so that when the wafer 1 is placed in the carrying area of the wafer conveying blade, the wafer 1 can be directly placed on the holding groove A1, the bottom of the wafer 1 is supported by the bottom support portion 201, and the periphery of the peripheral surface of the wafer 1 is stopped by the side wall portion 202, so that the clamping limit of the wafer 1 can be realized, and the edge of the wafer 1 is not damaged.
In the above-mentioned aspect, the inner side 202a of the side wall portion 202 refers to a side of the side wall portion 202 facing the wafer 1 in the radial direction of the wafer 1; the top surface 201a of the shoe portion 201 means a surface of the shoe portion 201 facing the bottom surface of the wafer 1 in a third direction perpendicular to the wafer 1.
In some exemplary embodiments of the present disclosure, the clamping portion 210 is configured to be in a block shape, and the shoe portion 201 and the side wall portion 202 cooperate to form a clamping block having an L-shaped structure, and accordingly, the receiving groove A1 is a groove having an L-shape. It will be understood, of course, that the specific configuration of the clamping portion 210 is not limited thereto.
In some exemplary embodiments of the present disclosure, the clamping portion 210 may be made of a quartz material. It is understood that the material of the clamping portion 210 is not limited thereto.
In some exemplary embodiments of the present disclosure, as shown in fig. 5 to 7, a connection transition position between the inner side 202a of the side wall portion 202 and the top surface 201a of the shoe portion 201 is configured in a circular arc transition shape adapted to the edge shape of the wafer 1.
Since the peripheral edge of the wafer 1 is generally circular, the area where the wafer 1 contacts the accommodating groove A1 may be formed in the same arc shape as the peripheral edge of the wafer 1, and in the above-described embodiment, the connection transition position between the side wall portion 202 and the shoe portion 201 may be formed in the arc transition shape, and here, it may be that the orthographic projection shape of the boundary line between the side wall portion 202 and the shoe portion 201 on the projection plane parallel to the direction of the wafer 1 is the arc shape matching the arc shape of the edge of the wafer 1, that is, the boundary line extends along the edge shape of the wafer 1. Thus, the clamping portion 210 can clamp and position the wafer 1 well.
In addition, the peripheral edge of the wafer 1 generally has an edge chamfer, so that the area where the wafer 1 contacts the receiving groove A1 may also be designed to be a circular arc transition shape that is adapted to the edge chamfer angle of the wafer 1, in the above-described scheme, the connection transition position between the side wall portion 202 and the shoe portion 201 is configured to be a circular arc transition shape, and may also be referred to as a circular arc transition shape that is adapted to the edge chamfer angle of the wafer 1. Thus, the clamping portion 210 can clamp and position the wafer 1 well.
In other embodiments of the present disclosure, the inner side 202a of the side wall 202 is configured as an arc curved surface adapted to the shape of the edge of the wafer 1, so that the clamping portion 210 can clamp and limit the wafer 1 well without damaging the edge of the wafer.
In some exemplary embodiments of the present disclosure, the side gusset portion 202 includes a top end and a bottom end opposite in a third direction Z, the third direction Z being perpendicular to the bearing surface of the blade body 100, the bottom end being connected to the shoe portion 201; wherein the inner side 202a of the side wall portion 202 is configured as an inclined surface, and gradually inclined from the bottom end to the top end in a direction radially away from the center of the wafer 1.
By adopting the above scheme, the inner side 202a of the side wall 202 is configured as an inclined surface, and the inclined surface gradually deviates from the center of the wafer 1 from the bottom end to the top end, so that, on one hand, the wafer 1 can be more conveniently placed in the accommodating groove A1, and the wafer 1 is prevented from being damaged due to collision with the wafer 1 in the placing process.
In some exemplary embodiments of the present disclosure, as shown in fig. 5 and 7, the inner side 202a of the side wall portion 202 is inclined at an angle α of 5 ° to 10 ° with respect to the third direction Z. In this way, the contact area between the wafer 1 and the blade body 100 can be smaller while the wafer 1 is effectively clamped and not swayed, so as to further ensure that the particles and scratches of the wafer 1 are fewer.
The inner side 202a of the side wall portion 202 may be configured as an inclined curved surface or an inclined plane.
As shown in fig. 7, when the inner side 202a of the side wall portion 202 is configured as a circular arc curved surface, the inclined angle between the inner side 202a and the third direction Z may be referred to as an inclined angle between a tangent line of the circular arc curved surface and the third direction Z.
In some exemplary embodiments of the present disclosure, as shown in fig. 7, a height h1 of the shoe portion 201 in the third direction Z is about 5mm, a height h2 of the side wall portion in the third direction Z is 7 to 8mm, a groove depth h3 of the receiving groove A1 is about 2 to 3mm, a width d1 of the side wall portion 202 in the radial direction of the wafer 1 is about 3mm, and a vertical width d2 of the shoe portion 210 and the side wall portion 202 and a length d2 in the height direction are about 5 mm. It will of course be appreciated that the above is merely an example and that the specific dimensions of the clamping portion 210 are not limited thereto.
According to a second aspect of the present disclosure, there is provided a wafer transfer apparatus including a wafer transfer blade provided by an embodiment of the present disclosure.
Obviously, the wafer 1 conveying device provided in the embodiment of the present disclosure may also bring the beneficial effects brought by the wafer conveying blade provided in the embodiment of the present disclosure, which is not described herein again.
The following points need to be described:
(1) The drawings of the embodiments of the present disclosure relate only to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.
(2) In the drawings for describing embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced for clarity, i.e., the drawings are not drawn to actual scale. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
(3) The embodiments of the present disclosure and features in the embodiments may be combined with each other to arrive at a new embodiment without conflict.
The above is merely a specific embodiment of the disclosure, but the protection scope of the disclosure should not be limited thereto, and the protection scope of the disclosure should be subject to the claims.

Claims (11)

1. A wafer transfer blade, comprising:
a blade body for carrying a wafer; and
The clamping assembly is used for clamping the wafer to limit the wafer, and comprises at least two clamping parts connected to the blade main body, wherein the at least two clamping parts are distributed at intervals along the circumferential direction of the wafer so as to mutually match to form a clamping space capable of accommodating the wafer.
2. The wafer transfer blade of claim 1, wherein the clamping assembly comprises four clamping portions, each two of the four clamping portions being grouped together to form two groups of clamping units, and wherein the two groups of clamping units are symmetrically distributed on diametrically opposite sides of the wafer about a center of the wafer.
3. The wafer transfer blade of claim 2, wherein the blade body comprises a base portion for carrying the wafer and a blade portion for connecting the blade portion to a power assembly that provides transfer power; the blade part is connected to one side of the base part along a first direction, the blade part has an extension length in the first direction, and the symmetry axes of the two groups of clamping assemblies are straight lines passing through the center of the wafer and parallel to the first direction.
4. The wafer transfer blade according to claim 3, wherein in each group of the clamping units, two clamping portions are a first clamping portion and a second clamping portion, respectively, which are arranged at intervals in the first direction; wherein the first clamping part is positioned at one end of the blade part, which is close to the base part, so as to clamp one side edge of the wafer, which is close to the base part in the first direction; the second clamping portion is located at one end of the blade portion away from the base portion to clamp a side edge of the wafer away from the base portion in the first direction.
5. The wafer transfer blade of claim 4, wherein the first clamping portions of the two sets of clamping units have a first separation distance therebetween in a second direction, the second clamping portions of the two sets of clamping units have a second separation distance therebetween in the second direction, the first separation distance being less than or equal to the second separation distance, the second direction being parallel to the wafer and perpendicular to the first direction.
6. The wafer transfer blade of claim 1, wherein the clamping portion is connected to the blade body as an integrally formed structure.
7. The wafer transfer blade of claim 1, wherein the clamping portion is configured to include a shoe portion and a side wall portion; wherein the shoe part is used for supporting the bottom surface of the wafer; the side wall part is used for stopping the periphery of the peripheral surface of the wafer, one end of the bottom support part is connected to the blade main body, and the side wall part is connected to one end, far away from the blade main body, of the bottom support part, so that the inner side surface of the side wall part is matched with the top surface of the bottom support part to form a containing groove for clamping the edge of the wafer.
8. The wafer transfer blade of claim 7, wherein a connection transition position between an inner side surface of the side wall portion and a top surface of the shoe portion is configured to be arc-shaped transition to fit an edge shape of the wafer; alternatively, the inner side surface of the side wall part is configured as an arc curved surface adapted to the edge shape of the wafer.
9. The wafer transfer blade of claim 7, wherein the side wall portion includes top and bottom ends that are opposite in a third direction, the third direction being perpendicular to the bearing surface of the blade body, the bottom end being connected to the shoe portion; wherein the inner side surface of the side wall portion is configured as an inclined surface, and gradually inclined from the bottom end to the top end in a direction radially away from the center of the wafer.
10. The wafer transfer blade of claim 9, wherein the inner side of the side gusset portion is inclined at an angle of 5-10 ° relative to the third direction.
11. A wafer transfer apparatus comprising a wafer transfer blade according to any one of claims 1 to 10.
CN202311596139.2A 2023-11-27 2023-11-27 Wafer conveying blade and wafer conveying device Pending CN117637560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311596139.2A CN117637560A (en) 2023-11-27 2023-11-27 Wafer conveying blade and wafer conveying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311596139.2A CN117637560A (en) 2023-11-27 2023-11-27 Wafer conveying blade and wafer conveying device

Publications (1)

Publication Number Publication Date
CN117637560A true CN117637560A (en) 2024-03-01

Family

ID=90028103

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311596139.2A Pending CN117637560A (en) 2023-11-27 2023-11-27 Wafer conveying blade and wafer conveying device

Country Status (1)

Country Link
CN (1) CN117637560A (en)

Similar Documents

Publication Publication Date Title
KR0153250B1 (en) Vertical heat-treating apparatus
US10553469B2 (en) Sealed substrate carriers and systems and methods for transporting substrates
US8216379B2 (en) Non-circular substrate holders
KR20020019414A (en) Substrate processing apparatus and method for manufacturing a semiconductor device by using the substrate processing apparatus
US20020066412A1 (en) Wafer carrier and semiconductor apparatus for processing a semiconductor substrate
KR20180056790A (en) Substrate carrier system
US8012888B2 (en) Substrate processing apparatus and semiconductor device manufacturing method
US20080025835A1 (en) Bernoulli wand
KR101423813B1 (en) Substrate carrying mechanism, substrate processing apparatus, and semiconductor device manufacturing method
US11842917B2 (en) Process kit ring adaptor
KR100975717B1 (en) Vapor phase growing apparatus and vapor phase growing method
KR100581418B1 (en) Alignment processing mechanism and semiconductor processing apparatus using the same
KR20110041799A (en) Substrate placing means, and appratus and module for treating substrate including the same
US20150270150A1 (en) Boat
US20080308036A1 (en) Vapor-phase growth apparatus and vapor-phase growth method
JP4168452B2 (en) Water vapor annealing jig, water vapor annealing method, and substrate transfer apparatus
CN117637560A (en) Wafer conveying blade and wafer conveying device
KR20210100720A (en) Vapor growth apparatus and carrier used therefor
TW201913861A (en) Wafer transfer device and wafer processing system
JP2010239023A (en) Substrate transfer device, and substrate processing device
US9803924B2 (en) Vertical heat treatment apparatus
KR101206924B1 (en) Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same
JP2004119627A (en) Semiconductor device manufacturing apparatus
KR100774711B1 (en) Particle removing apparatus of epitaxial equipment for semiconductor manufacturing and removing method
TW201523722A (en) Apparatus and method for treating a substrate

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination