CN117637509A - Wafer surface type detection system and wafer surface type detection method - Google Patents
Wafer surface type detection system and wafer surface type detection method Download PDFInfo
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Abstract
The application provides a wafer surface type detection system and a wafer surface type detection method, wherein the wafer surface type detection system comprises: the device comprises a light source device, a filtering beam expanding device, a beam splitting device, a reflecting device and an image acquisition device; the light source device is used for transmitting a detection light beam with preset wavelength to the filtering beam expanding device; the filtering beam expanding device is used for filtering and expanding the detection beam to obtain parallel light; the beam splitting device is used for reflecting the parallel light to obtain a first reflected light beam; the reflection device is used for placing a wafer to be detected, and the first reflection light beam irradiates the wafer to be detected and then is reflected by the reflection device to obtain a second reflection light beam; the image acquisition device is used for receiving the second reflected light beam to obtain a target image, and determining that the wafer to be tested meets the imprinting condition when the characteristic parameters of the Newton rings in the target image meet the preset parameter condition or the Newton rings in the target image do not appear. The method and the device can improve the surface type detection efficiency of the wafer and reduce the surface type detection cost of the wafer.
Description
Technical Field
The present disclosure relates to the field of computer vision, and in particular, to a wafer surface type detection system and a wafer surface type detection method.
Background
With the continuous development of information technology, enhanced display technology (AR) has been receiving a growing attention in recent years. Through the nanoimprint technology, the designed grating microstructure can be presented on a wafer in a manner of imprinting glue to serve as a carrier of the AR display device. The resin wafer has many advantages such as light weight and high safety, and is becoming a mainstream wafer for AR display devices. However, the flatness of the resin wafer is poor, and the flatness of the wafer is related to parameters such as the display performance of the imprinted waveguide, so that the flatness test needs to be performed on the resin wafer in order to screen out the resin wafer more suitable for imprinting. Conventional wafer surface type test equipment generally collects a certain number of points on the surface of a wafer, then comprehensively reflects the flatness of the wafer by analyzing the flatness of the points in different areas, and the final flatness calculation result depends on parameters such as the number of sampling points.
Disclosure of Invention
The application provides a wafer surface type detection system and a wafer surface type detection method, which aim to improve the detection efficiency of the wafer surface type and reduce the detection cost.
In a first aspect, the present application provides a wafer-type inspection system, comprising: the device comprises a light source device, a filtering beam expanding device, a beam splitting device, a reflecting device and an image acquisition device;
the light source device is used for transmitting a detection light beam with preset wavelength to the filtering beam expanding device;
the filtering beam expanding device is used for filtering and expanding the detection beam to obtain parallel light;
the beam splitting device is used for reflecting the parallel light to obtain a first reflected light beam;
the reflection device is used for placing a wafer to be detected, and the first reflection light beam irradiates the wafer to be detected and then is reflected by the reflection device to obtain a second reflection light beam;
the image acquisition device is used for receiving the second reflected light beam to obtain a target image, and determining that the wafer to be tested meets the imprinting condition when the characteristic parameters of the Newton rings in the target image meet the preset parameter condition or the Newton rings in the target image do not appear.
In one embodiment, the light source device, the filtering beam expanding device and the beam splitting device are positioned on the first light path; the beam splitting device, the reflecting device and the image acquisition device are positioned on a second light path, and the first light path is perpendicular to the second light path.
In one embodiment, the filtering and beam expanding device comprises a pinhole filter and a first lens; the light source device, the pinhole filter, the first lens and the beam splitting device are sequentially arranged on the first light path; the pinhole filter is used for filtering the detection light beam to obtain spherical waves; the first lens is used for expanding spherical waves to obtain parallel light.
In an embodiment, the first lens is a fourier lens, a mirror surface of the fourier lens close to the light source device is a plane, and a mirror surface of the fourier lens far from the light source device is a convex surface.
In one embodiment, the filter beam expander is a beam expander; the light source device, the beam expander and the beam splitting device are sequentially arranged on the first light path, and the beam expander is used for filtering and expanding the detection light beam to obtain parallel light.
In an embodiment, the wafer surface type detection system further includes a diaphragm, the diaphragm is disposed between the filtering beam expanding device and the beam splitting device, and the diaphragm is used for adjusting a diameter of the parallel light incident to the beam splitting device.
In an embodiment, the wafer surface type inspection system further includes a second lens and a third lens, the second lens and the third lens being located between the beam splitting device and the image capturing device, the image capturing device being configured to receive the second reflected light beam reflected from the reflecting device and penetrating the second lens and the third lens.
In an embodiment, the reflecting device is located on a focal plane of a side of the second lens away from the third lens, a focal length of the second lens is equal to a focal length of the third lens, and the image capturing device is located on a focal plane of a side of the third lens away from the second lens, and a distance between the second lens and the third lens is twice the focal length of the second lens.
In a second aspect, the present application further provides a method for detecting a wafer surface shape, including:
placing a wafer to be tested in a reflecting device, starting a light source device to enable the light source device to emit a detection light beam with preset wavelength to a filtering beam expanding device, obtaining parallel light incident to a beam splitting device after filtering beam expanding of the filtering beam expanding device, and enabling the beam splitting device to reflect the parallel light to obtain a first reflected light beam;
receiving a second reflected light beam obtained by reflecting the first reflected light beam by the reflecting device after irradiating the wafer to be detected through the image acquisition device to obtain a target image;
and when the characteristic parameters of the Newton rings in the target image accord with the preset parameter conditions or the Newton rings in the target image do not appear, determining that the wafer to be measured accords with the imprinting conditions.
In an embodiment, the method further comprises: if the Newton rings appear in the target image and the characteristic parameters of the Newton rings are determined to be not in accordance with the preset parameter conditions, determining that the wafer to be tested is not in accordance with the imprinting conditions, and determining the bending degree of the wafer to be tested according to the radius of the dark ring in the Newton rings.
The wafer surface type detection system can generate a first reflected light beam irradiated to a wafer to be detected, the first reflected light beam irradiates the wafer to be detected and then is reflected to an image acquisition device by a reflection device, so that the image acquisition device outputs a corresponding target image, and the flatness of the wafer to be detected is determined according to the content displayed by the target image, so that whether the wafer to be detected meets an imprinting condition or not is determined, wherein the flatness of the wafer to be detected meets the requirement when Newton rings do not appear in the target image, namely, the wafer to be detected meets the imprinting condition. The wafer surface type detection system is simple, low in manufacturing cost, capable of reducing the cost of wafer surface type detection, capable of determining whether the wafer to be detected meets the stamping condition through the target image, free of multipoint acquisition and analysis in the wafer, and capable of improving the efficiency of wafer surface type detection.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a wafer surface type inspection system according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a wafer surface type inspection system according to another embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a wafer surface type inspection system according to another embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a wafer surface type inspection system according to another embodiment of the present disclosure;
FIG. 5 is a flowchart illustrating steps of a method for wafer surface type inspection according to an embodiment of the present disclosure;
FIG. 6 is a view of a wafer surface type inspection scenario according to one embodiment of the present disclosure;
fig. 7 is a schematic diagram of newton rings according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The flow diagrams depicted in the figures are merely illustrative and not necessarily all of the elements and operations/steps are included or performed in the order described. For example, some operations/steps may be further divided, combined, or partially combined, so that the order of actual execution may be changed according to actual situations.
Some embodiments of the present application are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a wafer surface type inspection system according to an embodiment of the present application.
As shown in fig. 1, the wafer surface inspection system includes a light source device 1, a filter beam expander 2, a beam splitter 3, a reflector 4, and an image acquisition device 6. The light source device 1 is used for transmitting a detection light beam with preset wavelength to the filtering and beam expanding device 2, and the filtering and beam expanding device 2 is used for filtering and expanding the detection light beam to obtain parallel light; the beam splitting device 3 reflects the incident parallel light to obtain a first reflected light beam emitted to the reflecting device 4; the wafer 5 to be measured is placed on the reflecting device 4, and the first reflected light beam irradiates the wafer 5 to be measured and is reflected to the image acquisition device 6 by the reflecting device 4; the image acquisition device 6 receives the second reflected light beam reflected from the reflection device 4 to obtain a target image, so that the flatness of the wafer 5 to be measured can be determined according to the image appearing on the target image, whether the wafer 5 to be measured meets the imprinting condition or not can be determined, and specifically, if the characteristic parameters of the newton rings in the target image meet the preset parameter condition or the target image does not have the newton rings, the wafer 5 to be measured is determined to meet the imprinting condition.
It can be understood that after the probe beam emitted from the light source device 1 is incident to the filtering beam expanding device 2, the filtering beam expanding device 2 filters and expands the probe beam to obtain parallel light emitted to the beam splitting device 3; the parallel light is reflected after entering the beam splitting device 3 to obtain a first reflected light beam, and the first reflected light beam irradiates the wafer 5 to be detected arranged on the reflecting device 4 and is reflected by the reflecting device 4 to obtain a second reflected light beam; the second reflected light beam is incident to the image acquisition device 6 through the beam splitting device 3, so that the image acquisition device 6 can acquire a corresponding target image to determine whether the wafer 5 to be measured meets the imprinting condition.
The image acquisition device 6 can be connected with an image analysis device to analyze the target image output by the image acquisition device 6, so as to directly output the flatness of the wafer 5 to be tested and/or information such as whether the wafer meets the imprinting condition; the image acquisition device 6 can also directly output a target image, and a corresponding technician observes the target image to determine whether the wafer 5 to be tested meets the imprinting condition.
It should be noted that, when the first reflected light beam irradiates the wafer 5 to be measured and is reflected by the reflecting device 4 to the image acquisition device 6, based on the principle of equal-thickness interference, if the wafer 5 to be measured is warped, a phenomenon similar to newton rings will occur, so that the flatness of the wafer 5 to be measured can be determined according to the display content of the target image acquired by the image acquisition device 6.
In a specific implementation process, if the target image collected by the image collecting device 6 has only one bright line, it is determined that the target image does not have newton ring phenomenon at this time, so that it can be determined that the surface of the wafer 5 to be tested corresponding to the target image is flat, and it is understood that the wafer 5 to be tested with the flat surface is suitable for imprinting, so as to realize screening of the wafer. In another implementation process, if the target image acquired by the image acquisition device 6 has newton rings, but after the characteristic parameters of the newton rings are acquired, it is determined that the characteristic parameters of the newton rings meet the preset parameter conditions, it is determined that the wafer 5 to be tested has a certain warpage, but the degree of warpage of the wafer 5 to be tested still meets the imprinting conditions, and then it is determined that the wafer 5 to be tested meets the imprinting conditions. It is understood that the characteristic parameters of Newton rings include, but are not limited to, the number of layers of Newton rings, the width of the rings in Newton rings, and the average gray differences of Newton rings.
In a specific implementation process, the light source device 1 is a laser, the reflecting device 4 is a reflecting mirror, the image capturing device 6 is a camera, and the wafer to be tested is a resin wafer.
In one embodiment, the light source device 1, the filtering beam expanding device 2 and the beam splitting device 3 are located in a first light path; the beam splitting device 3, the reflecting device 4 and the image acquisition device 6 are positioned on a second light path, and the first light path is perpendicular to the second light path.
As shown in fig. 1, the light source device 1, the filtering beam expanding device 2 and the beam splitting device 3 are all located in a first optical path, and the beam splitting device 3, the reflecting device 4 and the image acquisition device 6 are located in a second optical path, so that the wafer surface type detection system is more compact when the image acquisition device 6 can realize the target image.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a wafer surface type inspection system according to another embodiment of the present application.
In an embodiment, the filter beam expanding device 2 comprises a pinhole filter 21 and a first lens 22; the light source device 1, the pinhole filter 21, the first lens 22, and the beam splitting device 3 are sequentially disposed on the first optical path; the pinhole filter 21 is used for filtering the detection light beam to obtain spherical waves; the first lens 22 is used for expanding spherical waves to obtain parallel light.
The filtering and beam expanding device 2 can be combined by a pinhole filter 21 and a first lens 22 to complete filtering and beam expanding of the probe beam under the combined action of the pinhole filter 21 and the first lens 22.
In a specific embodiment, the light source device 1, the pinhole filter 21, the first lens 22 and the beam splitter are sequentially disposed on the first optical path, so that after the probe beam exits from the light source device 1, the probe beam enters the pinhole filter 21 to complete filtering, and the spherical wave exiting from the pinhole filter 21 is expanded by the first lens 22 to obtain parallel light, so as to complete filtering and beam expansion processing, and the beam entering the beam splitting device 3 is parallel light.
In one embodiment, the first lens 22 is a fourier lens, the mirror surface of the fourier lens close to the light source device 1 is a plane, and the mirror surface of the fourier lens far from the light source device 1 is a convex surface.
Illustratively, the spherical wave is expanded by a fourier lens to obtain a parallel beam with good uniformity.
In another embodiment, the filtering beam expander 2 is a beam expander, and the light source device 1, the beam expander and the beam splitter 3 are sequentially disposed on the first optical path, and the beam expander is used for filtering and expanding the probe beam to obtain parallel light.
It will be appreciated that the combination of the pinhole filter 21 and the first lens 22 may be replaced by a beam expander to achieve a filtered beam expansion of the probe beam by the beam expander.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a wafer surface type inspection system according to another embodiment of the present application.
In one embodiment, the wafer surface type inspection system further includes a diaphragm 7, where the diaphragm 7 is disposed between the filtering beam expander 2 and the beam splitter 3, and the diaphragm 7 is used to adjust the diameter of the parallel light incident on the beam splitter 3.
By way of example, by arranging a diaphragm 7 between the filter beam expanding device 2 and the beam splitting device 3, the diameter of the parallel light incident on the beam splitting device 3 is adjusted such that the parallel light can be totally incident into the beam splitting device 3 to avoid the influence on the second reflected light beam.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a wafer surface type inspection system according to another embodiment of the present application.
In an embodiment, the wafer surface type inspection system further comprises a second lens 8 and a third lens 9, the second jackpot and the third lens 9 are located between the beam splitting device 3 and the image capturing device 6, and the image capturing device 6 is configured to receive the second reflected light beam reflected from the reflecting device 4 and penetrating the second lens 8 and the third lens 9.
Illustratively, the second lens 8 and the third lens 9 are disposed between the beam splitting device 3 and the image capturing device 6, so that the second reflected light beam reflected from the reflecting device 4 sequentially passes through the beam splitting device 3, the second lens 8 and the third lens 9 and then is incident on the image capturing device 6, so that the image capturing device 6 can capture a target image corresponding to the second reflected light beam. It will be appreciated that the sharpness of the target image in the image acquisition device 6 is enhanced by the combined action of the second lens 8 and the third lens 9.
In an embodiment, the reflecting device 4 is located on a focal plane of a side of the second lens 8 away from the third lens 9, the focal length of the second lens 8 is equal to the focal length of the third lens 9, the image capturing device 6 is located on a focal plane of a side of the third lens 9 away from the second lens 8, and the distance between the second lens 8 and the third lens 9 is twice the focal length of the second lens 8.
Illustratively, the distance between the reflecting device 4 and the second lens 8 is the focal length of the second lens 8, the distance between the second lens 8 and the third lens 9 is twice the focal length of the second lens 8, and the distance between the image capturing device 6 and the third lens 9 is the focal length of the second lens 8, and it can be understood that the second lens 8 and the third lens 9 form a 4F lens combination, so that the target image captured by the image capturing device 6 is clearer.
It should be understood that the light source device 1 in fig. 4 is represented by a laser diagram, the reflecting device 4 is represented by a mirror diagram, and the image capturing device 6 is represented by a camera diagram. Other devices may be used as the light source device 1, the reflecting device 4, and the image pickup device 6, and the present application is not limited thereto.
According to the wafer surface type detection system provided by the embodiment, the wafer 5 to be detected can be irradiated by the first reflected light beam which is the parallel light beam through the simpler optical device, and the second reflected light beam which is reflected through the image acquisition device 6 is obtained, so that the target image is obtained, the surface flatness of the wafer 5 to be detected can be analyzed based on the target image, the flatness of the wafer is comprehensively evaluated without analyzing the points of different areas, the detection efficiency of the wafer surface type is improved, and the detection cost is reduced.
Referring to fig. 5, fig. 5 is a flowchart illustrating steps of a wafer surface type inspection method according to an embodiment of the present disclosure.
The wafer surface type detection method comprises steps S101 to S103.
Step S101, placing a wafer to be tested in a reflecting device, starting a light source device to enable the light source device to emit a detection light beam with preset wavelength to a filtering beam expanding device, obtaining parallel light incident to a beam splitting device after filtering beam expanding of the filtering beam expanding device, and enabling the beam splitting device to reflect the parallel light to obtain a first reflected light beam.
The wafer to be measured with the surface flatness to be measured is placed on the reflecting device, the light source device is started, and the probe light beams with preset wavelengths emitted from the light source device sequentially pass through the filtering beam expanding device and the beam splitting device and then irradiate the surface of the wafer to be measured. Specifically, after the probe beam is filtered and expanded by the filtering and beam expanding device, parallel light is obtained, and after the beam splitting device reflects the parallel light to obtain a first reflected beam, the first reflected beam irradiates the surface of the wafer to be detected.
Step S102, receiving a second reflected light beam obtained by reflecting the first reflected light beam by the reflecting device after the first reflected light beam irradiates the wafer to be detected by the image acquisition device, and obtaining a target image.
The first reflected light beam irradiates the surface of the wafer to be measured, and then is reflected by the reflecting device to obtain a second reflected light beam, and the second reflected light beam is made to enter the image acquisition device, so that the image acquisition device can obtain a corresponding target image according to the second reflected light beam. It should be understood that the target image is generated by the principle of equal-thickness interference, and the warpage of the wafer to be tested can be known by analyzing the content displayed on the target image, so that the flatness of the wafer to be tested is determined, the efficiency of wafer surface type detection is improved, and the detection cost is reduced.
It should be noted that the wafer surface type detection method provided in the present application is applied to the surface type detection system of the wafer provided in the foregoing application, and the specific propagation path of the light beam in the method steps is referred to each embodiment of the wafer surface type detection system provided in the foregoing application, and the description is not repeated here.
And step S103, when the characteristic parameters of the Newton rings in the target image meet the preset parameter conditions or the Newton rings in the target image do not appear, determining that the wafer to be tested meets the imprinting conditions.
The image acquisition device receives the second reflected light beam, obtains a target image according to the second reflected light beam, and then observes whether the target image has Newton rings, if the target image does not have Newton rings, the surface of the wafer to be measured is determined to be relatively flat, and the wafer to be measured is determined to be in accordance with the imprinting condition.
If the target image has Newton rings, when the characteristic parameters of the Newton rings are determined to be in accordance with the preset parameter conditions, the wafer to be tested is determined to be in accordance with the imprinting conditions.
In an embodiment, the method further comprises: if the target image has Newton rings, and the characteristic parameters of the Newton rings are determined to be not in accordance with the preset parameter conditions, determining that the wafer to be tested is not in accordance with the imprinting conditions, and determining the bending degree of the wafer to be tested according to the radius of the dark ring in the Newton rings.
It can be understood that the surface of the wafer to be measured is uneven, and the newton rings appear on the target image acquired by the image acquisition device, so that the bending degree of the wafer to be measured can be analyzed by determining the characteristic parameters of the target image and/or the newton rings.
Referring to fig. 6 and fig. 7, fig. 6 is a view of a wafer surface type inspection scene provided in an embodiment of the present application, and fig. 7 is a schematic diagram of newton rings provided in an embodiment of the present application.
When the first reflected light beam irradiates the wafer to be tested and the wafer to be tested has warpage, newton rings shown in fig. 7 can be obtained through the image acquisition device, and the curvature radius of the wafer to be tested can be obtained by measuring the distance between dark rings in the Newton rings and combining the wavelength of the first reflected light beam irradiated to the wafer to be tested, so that the analysis of the surface flatness of the wafer to be tested is completed.
In a specific implementation process, as shown in fig. 7, a gap exists between the wafer to be measured and the reflecting device at the p point, and if the thickness of the air film at the p point is d, the optical path difference between the first reflected light beam and the second reflected light beam meeting at the p point is the difference between the geometric paths travelled by the two light beams, and can be expressed by the following formula:
wherein delta is used for indicating the optical path difference, d is used for indicating the gap between the wafer to be tested and the reflecting device, and lambda is used for indicating the wavelength of the detection light beam.
And when the optical path difference satisfies the following formula, the stripe at the position corresponding to the Newton ring is a dark stripe:
where k is a natural number.
Let the radius of curvature of the wafer to be measured be R, and the radius of the stripe on the newton ring be R, it can be seen from the geometric relationship shown in fig. 7:
combining the conditions that the Newton rings are dark stripes can obtain the relationship between the curvature radius R of the wafer to be detected and the radius R of the dark ring:
wherein r is k The radius of the k-th dark ring is the preset wavelength, and k is a positive integer.
Therefore, by the relation between the curvature radius R and the radius R of the dark ring, it can be determined where the wafer to be tested is warped, and the bending degree of the wafer to be tested can be known, and it is understood that the bending degree of the wafer to be tested is represented by the curvature radius R.
In other embodiments, the degree of bending of the wafer to be measured is determined by comparing the characteristic parameter determined according to the target image with a preset standard parameter.
In a specific implementation, the characteristic parameters determined from the target image include, but are not limited to, the number of newton rings, the width of the rings in the newton rings, and the average gray level difference of the newton rings. It can be understood that the above characteristic parameters may be set with corresponding standard parameters as preset parameter conditions, so that at least one of the number of newton rings and the width of the ring in the newton rings determined from the target image is compared with the corresponding standard parameters, so as to determine the bending degree of the wafer to be tested, and determine whether the wafer to be tested is suitable for imprinting according to the bending degree. It can be understood that when a wafer to be tested has certain warpage, but the corresponding warpage degree is determined according to the actual use requirement, the wafer to be tested is determined to be suitable for imprinting. That is, when the newton ring does not appear in the target image corresponding to the wafer to be tested, determining that the wafer to be tested is suitable for imprinting, and when the newton ring appears in the target image corresponding to the wafer to be tested, determining whether the wafer to be tested is suitable for imprinting according to the characteristic parameters of the newton ring and the preset parameter conditions.
According to the method for detecting the wafer surface type, whether the surface of the wafer to be detected is flat or not is determined through whether the Newton rings appear in the target image, so that the convenience and the efficiency of detecting the surface flatness of the wafer to be detected are improved, whether the wafer to be detected accords with imprinting or not can be determined according to the characteristic parameters of the Newton rings when the Newton rings appear in the target image, the bending position and the degree of the wafer to be detected can be determined according to the radius of the ring with dark veins in the Newton rings when the Newton rings are not suitable for imprinting are determined, and the detection precision of the surface flatness of the wafer to be detected is also improved.
It is to be understood that the terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations. It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The foregoing embodiment numbers of the present application are merely for describing, and do not represent advantages or disadvantages of the embodiments. While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. The wafer surface type detection system is characterized by comprising a light source device, a filtering beam expanding device, a beam splitting device, a reflecting device and an image acquisition device;
the light source device is used for transmitting a detection light beam with preset wavelength to the filtering beam expanding device;
the filtering beam expanding device is used for filtering and expanding the detection beam to obtain parallel light;
the beam splitting device is used for reflecting the parallel light to obtain a first reflected light beam;
the reflection device is used for placing a wafer to be detected, and the first reflection light beam irradiates the wafer to be detected and then is reflected by the reflection device to obtain a second reflection light beam;
the image acquisition device is used for receiving the second reflected light beam to obtain a target image, and determining that the wafer to be tested meets the imprinting condition when the characteristic parameters of the Newton rings in the target image meet the preset parameter condition or the Newton rings in the target image do not appear.
2. The wafer surface type inspection system of claim 1 wherein the light source device, the filter beam expander device and the beam splitter device are located in a first optical path;
the beam splitting device, the reflecting device and the image acquisition device are positioned on a second light path, and the first light path is perpendicular to the second light path.
3. The wafer surface type inspection system of claim 2 wherein the filter beam expanding device comprises a pinhole filter and a first lens; the light source device, the pinhole filter, the first lens and the beam splitting device are sequentially arranged on the first light path;
the pinhole filter is used for filtering the detection light beam to obtain spherical waves; the first lens is used for expanding the spherical wave to obtain the parallel light.
4. The wafer level inspection system of claim 3 wherein the first lens is a fourier lens, a mirror surface of the fourier lens adjacent the light source device is planar, and a mirror surface of the fourier lens remote from the light source device is convex.
5. The wafer surface type inspection system of claim 2 wherein the filter beam expander is a beam expander; the light source device, the beam expander and the beam splitting device are sequentially arranged on the first light path, and the beam expander is used for filtering and expanding the detection light beam to obtain parallel light.
6. The wafer level inspection system of any one of claims 1-5, further comprising a diaphragm disposed between the filter beam expander and the beam splitter, the diaphragm configured to adjust a diameter of parallel light incident to the beam splitter.
7. The wafer level inspection system of any one of claims 1-5, further comprising a second lens and a third lens positioned between the beam splitting device and the image capturing device for receiving a second reflected beam reflected from the reflecting device and passing through the second lens and the third lens.
8. The wafer surface type inspection system of claim 7, wherein the reflecting means is located on a focal plane of a side of the second lens away from the third lens, a focal length of the second lens is equal to a focal length of the third lens, and the image capturing means is located on a focal plane of a side of the third lens away from the second lens, the second lens being spaced from the third lens by a distance twice a focal length of the second lens.
9. A method for inspecting a wafer surface profile, applied to the system according to any one of claims 1 to 8, comprising:
placing a wafer to be tested in a reflecting device, starting a light source device to enable the light source device to emit a detection light beam with preset wavelength to a filtering beam expanding device, obtaining parallel light which is incident to a beam splitting device after filtering beam expanding of the filtering beam expanding device, and enabling the beam splitting device to reflect the parallel light to obtain a first reflected light beam;
receiving a second reflected light beam obtained by reflecting the first reflected light beam by the reflecting device after irradiating the wafer to be detected through the image acquisition device to obtain a target image;
and when the characteristic parameters of the Newton rings in the target image accord with preset parameter conditions or the Newton rings in the target image do not appear, determining that the wafer to be tested accords with stamping conditions.
10. The method for inspecting a wafer surface type according to claim 9, further comprising:
and if the Newton rings appear in the target image and the characteristic parameters of the Newton rings are determined to be not in accordance with the preset parameter conditions, determining that the wafer to be tested is not in accordance with the imprinting conditions, and determining the bending degree of the wafer to be tested according to the radius of the ring with dark veins in the Newton rings.
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