CN117630642A - De-embedding method and de-embedding device - Google Patents

De-embedding method and de-embedding device Download PDF

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CN117630642A
CN117630642A CN202311651066.2A CN202311651066A CN117630642A CN 117630642 A CN117630642 A CN 117630642A CN 202311651066 A CN202311651066 A CN 202311651066A CN 117630642 A CN117630642 A CN 117630642A
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parameter
frequency
transmission characteristic
impedance
circuit transmission
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王金玲
洪浩
梅腾达
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Suzhou Huatai Electronics Co Ltd
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Suzhou Huatai Electronics Co Ltd
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Abstract

The embodiment of the application provides a de-embedding method and a de-embedding device, wherein the method comprises the following steps: acquiring first circuit transmission characteristic parameters of a target standard structural member under a plurality of frequencies; obtaining characteristic impedance corresponding to each frequency based on the first circuit transmission characteristic parameters of the target standard structural member under each frequency; the impedance of the first circuit transmission characteristic parameter of the target standard structural member under each frequency is adjusted to be characteristic impedance corresponding to each frequency, and the first circuit transmission characteristic parameter after impedance adjustment is obtained; obtaining first circuit transmission characteristic parameters of the measured piece under each frequency based on the first circuit transmission characteristic parameters of the target standard structural piece under each frequency after impedance adjustment and a target calibration algorithm; and adjusting the impedance of the first circuit transmission characteristic parameters of the measured piece under each frequency to be target impedance, and obtaining the first circuit transmission characteristic parameters of the measured piece after the impedance adjustment. The embodiment of the application can improve the de-embedding accuracy.

Description

De-embedding method and de-embedding device
Technical Field
The application belongs to the technical field of testing, and particularly relates to a de-embedding method and a de-embedding device.
Background
Due to the differences in device characteristics on the wafer, the DUT (Device Under Test) is typically much smaller than the coplanar probes used in the measurements. Thus, probes on a wafer need to be connected to DUTs through the test devices, which involves de-embedding problems between the DUTs and the test devices.
De-embedding is the process of moving the reference plane of the microwave measurement to the DUT reference plane, and can be accomplished by an algorithm. However, the present deblocking method has a larger deblocking error and lower deblocking accuracy.
Disclosure of Invention
The embodiment of the application provides a de-embedding method and a de-embedding device, which can reduce the de-embedding error and improve the de-embedding accuracy.
In a first aspect, an embodiment of the present application provides a deblocking method, where the deblocking method includes: acquiring first circuit transmission characteristic parameters of a target standard structural member under a plurality of frequencies, wherein the target standard structural member comprises a calibration structural member and a tested structural member, the tested structural member comprises a detection welding pad, a transmission line and a tested member, and the detection welding pad is electrically connected with the tested member through the transmission line; obtaining characteristic impedance corresponding to each frequency based on the first circuit transmission characteristic parameters of the target standard structural member under each frequency; respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structural member under each frequency to be characteristic impedance corresponding to each frequency, and obtaining the first circuit transmission characteristic parameter of the target standard structural member under each frequency after impedance adjustment; obtaining first circuit transmission characteristic parameters of the measured piece under each frequency based on the first circuit transmission characteristic parameters of the target standard structural piece under each frequency after impedance adjustment and a target calibration algorithm; and adjusting the impedance of the first circuit transmission characteristic parameters of the measured piece under each frequency to be target impedance, and obtaining the first circuit transmission characteristic parameters of the measured piece after the impedance adjustment.
According to an embodiment of the first aspect of the present application, the alignment structures comprise a through alignment structure, a reflection alignment structure and a delay alignment structure, the delay alignment structure comprises a first delay alignment structure and a second delay alignment structure; the direct connection calibration structural member comprises two groups of short-circuited detection pads, the reflection calibration structural member comprises two groups of open-circuited detection pads, the first delay calibration structural member comprises two groups of detection pads and a first detection line of a first length, the two groups of detection pads are connected through the first detection line, the second delay calibration structural member comprises two groups of detection pads and a second detection line of a second length, and the two groups of detection pads are connected through the second detection line.
According to any one of the foregoing embodiments of the first aspect of the present application, obtaining the characteristic impedance corresponding to each frequency based on the first circuit transmission characteristic parameter of the target standard structural member at each frequency includes: for any ith frequency, constructing a first actual ABCD matrix of the first delay calibration structural member according to a first circuit transmission characteristic parameter of the first delay calibration structural member at the ith frequency, wherein i is a positive integer; constructing a second actual ABCD matrix of the second delay calibration structural member according to the first circuit transmission characteristic parameter of the second delay calibration structural member at the ith frequency; obtaining a first theoretical ABCD matrix of the first delay calibration structural member according to the theoretical ABCD matrix of the detection bonding pad and the theoretical ABCD matrix of the first transmission line; obtaining a second theoretical ABCD matrix of the second delay calibration structural member according to the theoretical ABCD matrix of the detection bonding pad and the theoretical ABCD matrix of the second transmission line; establishing a first equivalent relation between a first actual ABCD matrix and a first theoretical ABCD matrix, and establishing a second equivalent relation between a second actual ABCD matrix and a second theoretical ABCD matrix; and solving the first equivalent relation and the second equivalent relation to obtain the characteristic impedance corresponding to the ith frequency.
According to any of the foregoing embodiments of the first aspect of the present application, the first equivalent relation includes:
wherein,representing a first actual ABCD matrix,/and->Representing the a parameter in the first actual ABCD matrix,represents the B parameter in the first actual ABCD matrix, and (2)>Representing the C parameter in the first actual ABCD matrix, and (2)>Represents the D parameter in the first actual ABCD matrix, [ TL ] l1 ]Represents a first theoretical ABCD matrix, A 0 、B 0 、C 0 And D 0 Respectively represent A parameter, B parameter, C parameter and D parameter corresponding to the detection bonding pad in the first theoretical ABCD matrix, A L1 、B L1 、C L1 And D L1 Respectively representing an A parameter, a B parameter, a C parameter and a D parameter corresponding to a first transmission line in a first theoretical ABCD matrix;
the second equivalent relationship includes:
wherein,representing a second actual ABCD matrix, +.>Representing the a parameter in the second actual ABCD matrix,represents the B parameter in the second actual ABCD matrix, and (2)>Representing the C parameter in the second actual ABCD matrix, and (2)>Representing the D parameter in the second actual ABCD matrix, [ TL ] l2 ]Represents a second theoretical ABCD matrix, A 0 、B 0 、C 0 And D 0 Respectively represent A parameter, B parameter, C parameter and D parameter corresponding to the detection bonding pad in the second theoretical ABCD matrix, A L2 、B L2 、C L2 And D L2 And respectively representing an A parameter, a B parameter, a C parameter and a D parameter corresponding to a second transmission line in the second theoretical ABCD matrix.
According to any of the foregoing embodiments of the first aspect of the present application, solving the first equivalent relation and the second equivalent relation to obtain a characteristic impedance corresponding to the ith frequency includes:
calculating the characteristic impedance corresponding to the ith frequency according to the following expression:
wherein Z is 0 Representing the characteristic impedance corresponding to the i-th frequency.
According to any one of the foregoing embodiments of the first aspect of the present application, the adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structural member at each frequency to the characteristic impedance corresponding to each frequency, to obtain the first circuit transmission characteristic parameter of the target standard structural member after the impedance adjustment, includes:
for any ith frequency, based on a target impedance change function, adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structural member under the ith frequency to the characteristic impedance corresponding to the ith frequency to obtain the first circuit transmission characteristic parameter of the target standard structural member under the ith frequency after impedance adjustment, wherein i is a positive integer.
According to any one of the foregoing embodiments of the first aspect of the present application, based on the first circuit transmission characteristic parameters of the impedance-adjusted target standard structural member at each frequency and the target calibration algorithm, obtaining the first circuit transmission characteristic parameters of the measured member at each frequency includes: obtaining first circuit transmission characteristic parameters of the measured piece under each frequency based on the first circuit transmission characteristic parameters of the target delay calibration structural piece, the direct calibration structural piece and the reflection calibration structural piece under each frequency after impedance adjustment and a target calibration algorithm; the target delay calibration structure comprises any one of a first delay calibration structure and a second delay calibration structure.
According to any one of the foregoing embodiments of the first aspect of the present application, based on the first circuit transmission characteristic parameters and the target calibration algorithm of the target delay calibration structure, the through calibration structure, and the reflection calibration structure after the impedance adjustment at each frequency, obtaining the first circuit transmission characteristic parameters of the measured piece at each frequency includes: for any ith frequency, converting a first circuit transmission characteristic parameter of the straight-through calibration structural member and the target delay calibration structural member under the ith frequency into a second circuit transmission characteristic parameter, wherein i is a positive integer; constructing a transmission parameter relation based on the transmission characteristic parameters of the second circuit of the straight-through calibration structural member and the target delay calibration structural member under the ith frequency; constructing a reflection parameter relation based on a first circuit transmission characteristic parameter of the reflection calibration structural member at the ith frequency; based on the transmission parameter relation and the reflection parameter relation, solving a first error and a second error between the measurement reference surface and the calibration reference surface; and determining the first circuit transmission characteristic parameter of the tested piece at the ith frequency according to the first circuit transmission characteristic parameter, the first error and the second error of the tested piece at the ith frequency.
According to any one of the foregoing embodiments of the first aspect of the present application, adjusting the impedance of the first circuit transmission characteristic parameter of the measured object at each frequency to be a target impedance, to obtain the first circuit transmission characteristic parameter of the measured object after the impedance adjustment, includes: for any ith frequency, adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the tested piece under the ith frequency to be target impedance based on a target impedance change function, and obtaining the first circuit transmission characteristic parameter of the tested piece under the ith frequency after impedance adjustment, wherein i is a positive integer.
In a second aspect, embodiments of the present application provide a de-embedding device, including: the acquisition module is used for acquiring first circuit transmission characteristic parameters of the target standard structural member under a plurality of frequencies, the target standard structural member comprises a calibration structural member and a tested structural member, the tested structural member comprises a detection welding pad, a transmission line and a tested member, and the detection welding pad is electrically connected with the tested member through the transmission line; the first calculation module is used for obtaining characteristic impedance corresponding to each frequency based on the first circuit transmission characteristic parameters of the target standard structural member under each frequency; the first adjusting module is used for respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structural member under each frequency to the characteristic impedance corresponding to each frequency to obtain the first circuit transmission characteristic parameter of the target standard structural member under each frequency after the impedance is adjusted; the second calculation module is used for obtaining the first circuit transmission characteristic parameters of the measured piece under each frequency based on the first circuit transmission characteristic parameters of the target standard structural piece under each frequency after the impedance adjustment and a target calibration algorithm; and the second adjusting module is used for adjusting the impedance of the first circuit transmission characteristic parameter of the measured piece under each frequency to be target impedance, and obtaining the first circuit transmission characteristic parameter of the measured piece after the impedance adjustment.
In a third aspect, an embodiment of the present application provides an electronic device, including: a processor, a memory and a computer program stored on the memory and executable on the processor, the computer program implementing the steps of the de-embedding method as provided in the first aspect when being executed by the processor.
In a fourth aspect, embodiments of the present application provide a computer readable storage medium having a computer program stored thereon, which when executed by a processor, implements the steps of the de-embedding method as provided in the first aspect.
According to the de-embedding method and the de-embedding device, the influence of characteristic impedance changing along with frequency on the de-embedding accuracy is considered, and firstly, characteristic impedance corresponding to each frequency is obtained based on first circuit transmission characteristic parameters (such as S parameters) of a target standard structural member under each frequency; then, respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameters of the target standard structural member under each frequency to characteristic impedance corresponding to each frequency to obtain the first circuit transmission characteristic parameters of the target standard structural member under each frequency after impedance adjustment, namely obtaining the first circuit transmission characteristic parameters of the target standard structural member influenced by the characteristic impedance changing along with the frequency; then, based on the first circuit transmission characteristic parameters of the target standard structural member with the impedance adjusted under each frequency and a target calibration algorithm, obtaining the first circuit transmission characteristic parameters of the measured member under each frequency; and finally, adjusting the impedance of the first circuit transmission characteristic parameters of the measured piece under each frequency to be target impedance, obtaining the first circuit transmission characteristic parameters of the measured piece after the impedance is adjusted, and obtaining the first circuit transmission characteristic parameters of the measured piece after the de-embedding errors caused by the characteristic impedance of each frequency are removed. Therefore, the embodiment of the application improves the de-embedding accuracy by removing the de-embedding error caused by the characteristic impedance changing along with the frequency, overcomes the frequency range limitation of the traditional de-embedding method, and can achieve better de-embedding effect in a wider frequency range (such as lower frequency or higher frequency).
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments of the present application will be briefly described, and it is possible for a person skilled in the art to obtain other drawings according to these drawings without inventive effort.
Fig. 1 is a schematic flow chart of a deblocking method according to an embodiment of the present application;
FIG. 2 is a schematic view of a structure of a tested structure;
FIG. 3 is a schematic view of a configuration of a pass-through alignment structure;
FIG. 4 is a schematic view of a reflective alignment structure;
FIG. 5 is a schematic view of a first time delay calibration structure;
FIG. 6 is a schematic view of a second time delay calibration structure;
fig. 7 is a schematic flow chart of step S102 in the deblocking method according to the present embodiment;
FIG. 8 is a schematic diagram of an equivalent circuit of a GSG pad;
FIG. 9 is a schematic diagram of one implementation of the TRL algorithm;
fig. 10 is a schematic flow chart of step S104 in the deblocking method according to the present embodiment;
FIG. 11 is a schematic diagram of a deblocking effect of a TRL algorithm of the related art;
FIG. 12 is a schematic diagram showing a deblocking effect of a deblocking method according to an embodiment of the present application;
FIG. 13 is a schematic structural view of a de-embedding device according to an embodiment of the present application;
fig. 14 shows a schematic hardware structure of an electronic device according to an embodiment of the present application.
Detailed Description
Features and exemplary embodiments of various aspects of the present application are described in detail below to make the objects, technical solutions and advantages of the present application more apparent, and to further describe the present application in conjunction with the accompanying drawings and the detailed embodiments. It should be understood that the specific embodiments described herein are intended to be illustrative of the application and are not intended to be limiting. It will be apparent to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present application by showing examples of the present application.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
It should be understood that the term "and/or" as used herein is merely one relationship describing the association of the associated objects, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
In the embodiments herein, the term "electrically connected" may refer to two components being directly electrically connected, or may refer to two components being electrically connected via one or more other components.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Accordingly, this application is intended to cover such modifications and variations of this application as fall within the scope of the appended claims (the claims) and their equivalents. The embodiments provided in the examples of the present application may be combined with each other without contradiction.
Before describing the technical solution provided by the embodiments of the present application, in order to facilitate understanding of the embodiments of the present application, the present application first specifically describes the problems existing in the related art:
Due to the differences in device characteristics on the wafer, the Device Under Test (DUT) is typically much smaller than the coplanar probes used in the measurements. Thus, probes on a wafer need to be connected to DUTs through the test devices, which involves de-embedding problems between the DUTs and the test devices.
De-embedding is the process of moving the reference plane of the microwave measurement to the DUT reference plane, and can be accomplished by an algorithm. The de-embedding method is mainly divided into two main categories: lumped parameter de-embedding and distributed parameter de-embedding. The lumped parameter equivalent de-embedding can comprise open-short test (open-short), through (thru), open-short-thru and other de-embedding methods, and the distributed parameters are de-embedded with L-2L de-embedding and the like.
The open-short algorithm is a lumped parameter deblocking algorithm, which is usually only implemented when the frequency is low, and when the frequency is high or the contact line of the chip is long, the deblocking accuracy of the method is not ideal.
The direct reflection delay calibration (Thru Reflect Line, TRL) algorithm is a calibration algorithm used in the microwave and radio frequency fields, and the TRL algorithm has a limitation on the frequency range and cannot cover full-band calibration. Also for low frequencies, if on-chip calibration is used, a large amount of wafer area is occupied, thereby increasing cost.
The L-2L algorithm is a de-embedding algorithm applied to the microwave radio frequency field, and the L-2L algorithm has the defect that transmission lines with the lengths of L and 2L respectively need to be provided, and the method is not applicable to the transmission lines with other lengths.
The inventor of the application finds that the current MOS technology has larger substrate loss, so that the characteristic impedance of the transmission line changes greatly along with the frequency, and the characteristic impedance changing along with the frequency can cause larger de-embedding error. The present de-embedding method does not consider the de-embedding error caused by the characteristic impedance changing along with the frequency when de-embedding, thereby resulting in lower de-embedding accuracy.
In view of the above-mentioned research of the inventor, the embodiment of the application provides a de-embedding method and a de-embedding device, which can solve the technical problems of larger de-embedding error and lower de-embedding accuracy in the related technology.
The following first describes the deblocking method provided in the embodiments of the present application.
Fig. 1 is a schematic flow chart of a deblocking method according to an embodiment of the present application. As shown in fig. 1, the method may include the following steps S101 to S105.
S101, acquiring first circuit transmission characteristic parameters of a target standard structural member under a plurality of frequencies.
The first circuit transmission characteristic parameter may include an S parameter, and the S parameter may include an S11 parameter, an S12 parameter, an S21 parameter, and an S22 parameter. The number of the plurality of frequencies can be flexibly adjusted according to practical situations, and the application is not limited to the number.
The target standard structure may include a calibration structure and a measured structure. The tested structural member comprises a detection bonding pad, a transmission line and a tested piece, wherein the detection bonding pad is electrically connected with the tested piece through the transmission line.
Fig. 2 is a schematic structural view of the tested structural member. As shown in fig. 2, in some embodiments, the structure under test 20 may include two sets of test pads 21, two transmission lines L, and a DUT under test. Each set of sense pads 21 may be GSG (Ground signal ground) pads, with GSG pads including two ground pads G and 1 signal pad S, respectively. Each group of the inspection pads 21 is electrically connected to the DUT via a transmission line L.
S102, obtaining characteristic impedance corresponding to each frequency based on the first circuit transmission characteristic parameters of the target standard structural member under each frequency.
Wherein the characteristic impedance may also be referred to as characteristic impedance. The characteristic impedance corresponding to each frequency may be a characteristic impedance of the transmission line corresponding to each frequency. In S102, the characteristic impedance of the transmission line corresponding to each frequency may be obtained based on the S parameter of the target standard structural member at each frequency.
S103, respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameters of the target standard structural member under each frequency to the characteristic impedance corresponding to each frequency, and obtaining the first circuit transmission characteristic parameters of the target standard structural member under each frequency after the impedance adjustment.
S104, obtaining the first circuit transmission characteristic parameters of the tested piece under each frequency based on the first circuit transmission characteristic parameters of the target standard structural piece under each frequency after the impedance adjustment and a target calibration algorithm.
Among them, the target calibration algorithm includes, but is not limited to, a through reflection delay calibration (Thru Reflect Line, TRL) algorithm.
S105, adjusting the impedance of the first circuit transmission characteristic parameter of the measured piece at each frequency to be a target impedance, and obtaining the first circuit transmission characteristic parameter of the measured piece after impedance adjustment.
The target impedance can be flexibly adjusted according to practical situations, which is not limited in the application. The impedance of the first circuit transmission characteristic parameter of the measured piece under each frequency is adjusted to be the target impedance, so that the first circuit transmission characteristic parameter of the measured piece after impedance adjustment is obtained, the impedance assumption problem of a transmission line of the target impedance can be solved, and the first circuit transmission characteristic parameter of the measured piece after de-embedding, namely the S parameter of the measured piece after de-embedding, is obtained.
In some examples, the target impedance may comprise 50 ohms, for example. That is, the impedance of the S parameter of the measured object at each frequency is adjusted to 50 ohms, and the S parameter of the measured object after the de-embedding is obtained.
The specific implementation of each of the above steps will be described in detail below.
According to the de-embedding method, the influence of characteristic impedance changing along with frequency on the de-embedding accuracy is considered, and the characteristic impedance corresponding to each frequency is obtained firstly based on a first circuit transmission characteristic parameter (such as S parameter) of a target standard structural member under each frequency; then, respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameters of the target standard structural member under each frequency to characteristic impedance corresponding to each frequency to obtain the first circuit transmission characteristic parameters of the target standard structural member under each frequency after impedance adjustment, namely obtaining the first circuit transmission characteristic parameters of the target standard structural member influenced by the characteristic impedance changing along with the frequency; then, based on the first circuit transmission characteristic parameters of the target standard structural member with the impedance adjusted under each frequency and a target calibration algorithm, obtaining the first circuit transmission characteristic parameters of the measured member under each frequency; and finally, adjusting the impedance of the first circuit transmission characteristic parameters of the measured piece under each frequency to be target impedance, obtaining the first circuit transmission characteristic parameters of the measured piece after the impedance is adjusted, and obtaining the first circuit transmission characteristic parameters of the measured piece after the de-embedding errors caused by the characteristic impedance of each frequency are removed. Therefore, the embodiment of the application improves the de-embedding accuracy by removing the de-embedding error caused by the characteristic impedance changing along with the frequency, overcomes the frequency range limitation of the traditional de-embedding method, and can achieve better de-embedding effect in a wider frequency range (such as lower frequency or higher frequency).
According to some embodiments of the present application, optionally, the alignment structures may include a pass-through alignment structure, a reflection alignment structure, and a delay alignment structure, the delay alignment structure including a first delay alignment structure and a second delay alignment structure.
Fig. 3 is a schematic view of a configuration of a pass-through alignment structure. FIG. 4 is a schematic view of a reflective alignment structure. Fig. 5 is a schematic structural view of the first time delay calibration structure. Fig. 6 is a schematic structural view of a second time delay calibration structure. As shown in fig. 3-6, in some embodiments, a pass-Through alignment structure (also known as a Through alignment structure) 30 may include two sets of shorting detection pads 21. The inspection pad 21 may be a GSG pad. A short circuit is established between two sets of GSG pads in the pass-through alignment structure 30. The reflective alignment structure (also known as an Open alignment structure) 40 may include two sets of detection pads 21 that are Open. The inspection pad 21 may be a GSG pad. Open (i.e., circuit break) between two sets of GSG pads in reflective alignment structure 40.
The first delay calibration structure 50 may include two sets of test pads 21 and a first length L 1 Two sets of inspection pads 21 are connected through the first inspection line L1'. The inspection pad 21 may be a GSG pad. Two sets of GSG pads in the first delay calibration structure 50 pass through a first length L 1 Is connected to the first detection line L1'. First length L 1 Can be flexibly adjusted according to actual conditions, and the application is not limited to the method.
The second delay calibration structure 60 may include two sets of test pads 21 and a second length L 2 Two sets of inspection pads 21 are connected through the second inspection line L2'. The inspection pad 21 may be a GSG pad. Two sets of GSG pads in the second delay calibration structure 60 pass through a second length L 2 Is connected to the second detection line L2'. Second length L 2 Can be flexibly adjusted according to actual conditions, and the application is not limited to the method. Wherein the first length L 1 Is not equal to the second length L 2 。
First length L 1 And a second length L 2 And is no longer limited to one length L and another length 2L. The embodiment of the application overcomes the defects of an L-2L algorithm, and can realize the extraction of characteristic impedance along with the change of frequency through 2 transmission lines with GSG pads of any length, thereby realizing flexible test.
In S101, a first circuit transmission characteristic parameter (i.e., S parameter) of the target standard structure at a plurality of frequencies may be measured, for example, by a vector network analyzer. For example, S parameters at a plurality of frequencies may be measured by a vector network analyzer for the pass through calibration structure 30, the reflection calibration structure 40, the first delay calibration structure 50, the second delay calibration structure 60, and the measured structure 20.
Fig. 7 is a schematic flow chart of step S102 in the deblocking method according to the embodiment of the present application. As shown in fig. 7, according to some embodiments of the present application, optionally, S102, based on the first circuit transmission characteristic parameters of the target standard structural member at each frequency, obtains the characteristic impedance corresponding to each frequency, and may specifically include the following steps S701 to S706.
S701, for any ith frequency, constructing a first actual ABCD matrix of the first delay calibration structural member according to a first circuit transmission characteristic parameter of the first delay calibration structural member under the ith frequency, wherein i is a positive integer.
In S701, for any ith frequency, a first actual ABCD matrix for the first time delay calibration structure may be constructed according to the S parameter of the first time delay calibration structure at the ith frequency
Wherein, representing the a parameter in the first actual ABCD matrix, and (2)>Represents the B parameter in the first actual ABCD matrix, and (2)>Representing the C parameter in the first actual ABCD matrix, and (2)>Representing the D parameter in the first actual ABCD matrix.
S702, constructing a second actual ABCD matrix of the second delay calibration structural member according to the first circuit transmission characteristic parameter of the second delay calibration structural member at the ith frequency.
In S702, for any ith frequency, a second actual ABCD matrix for the second time delay calibration structure may be constructed based on S parameters of the second time delay calibration structure at the ith frequency
Wherein, representing the a parameter in the second actual ABCD matrix, and (2)>Represents the B parameter in the second actual ABCD matrix, and (2)>Representing the C parameter in the second actual ABCD matrix, and (2)>Representing the D parameter in the second actual ABCD matrix.
First actual ABCD matrixAnd a second actual ABCD matrix->It can be seen as an ABCD matrix obtained from the actual measured values of the S parameters.
S703, obtaining a first theoretical ABCD matrix of the first delay calibration structural member according to the theoretical ABCD matrix of the detection bonding pad and the theoretical ABCD matrix of the first transmission line.
Fig. 8 is an equivalent circuit schematic of a GSG pad. As shown in fig. 8, admittance between the ground pad G and the signal pad S of the GSG pad may be equivalent to parallel connection of admittance Y1 and admittance Y2.
Then the theoretical ABCD matrix P of the sense pad (i.e., GSG pad) ad ]Can be expressed as:
Z 1 ＝1/Y 1 (2)
wherein A is 0 、B 0 、C 0 And D 0 The a, B, C and D parameters in the theoretical ABCD matrix for the sense pad are shown, respectively.
First length L 1 Theoretical ABCD matrix of first transmission line [ M ] l1 ]Can be expressed as:
wherein A is L1 、B L1 、C L1 And D L1 The a, B, C and D parameters in the theoretical ABCD matrix for the first transmission line are represented, respectively. Gamma denotes the propagation constant of the transmission line, sinh denotes hyperbolic sine, cosh denotes hyperbolic cosine, Z 0 Representing the characteristic impedance of the i-th frequency.
First theoretical ABCD matrix of first time delay calibration Structure [ TL l1 ]Can be expressed as:
s704, obtaining a second theoretical ABCD matrix of the second delay calibration structural member according to the theoretical ABCD matrix of the detection bonding pad and the theoretical ABCD matrix of the second transmission line.
First length L 2 Theoretical ABCD matrix of second transmission line [ M ] l2 ]Can be expressed as:
wherein A is L2 、B L2 、C L2 And D L2 The a, B, C and D parameters in the theoretical ABCD matrix for the second transmission line are represented, respectively. Gamma denotes the propagation constant of the transmission line, sinh denotes hyperbolic sine, cosh denotes hyperbolic cosine, Z 0 Representing the characteristic impedance of the i-th frequency.
S705, a first equivalent relation between the first actual ABCD matrix and the first theoretical ABCD matrix is established, and a second equivalent relation between the second actual ABCD matrix and the second theoretical ABCD matrix is established.
Second theoretical ABCD matrix of second time delay calibration Structure [ TL l2 ]Can be expressed as:
Wherein,and->Is known.
Constructing a nonlinear equation set according to the expressions (4) and (6), and calculating an error equation:
accordingly, the first equivalent relationship may include:
as previously described, A 0 、B 0 、C 0 And D 0 Respectively represent the A parameter, B parameter, C parameter and D parameter in the theoretical ABCD matrix of the inspection pad, i.e. A 0 、B 0 、C 0 And D 0 And respectively representing an A parameter, a B parameter, a C parameter and a D parameter corresponding to the detection pad in the first theoretical ABCD matrix.
Accordingly, the second equivalent relationship may include:
as previously described, A 0 、B 0 、C 0 And D 0 Respectively represent the A parameter, B parameter, C parameter and D parameter in the theoretical ABCD matrix of the inspection pad, i.e. A 0 、B 0 、C 0 And D 0 And respectively representing an A parameter, a B parameter, a C parameter and a D parameter corresponding to the detection pad in the second theoretical ABCD matrix.
S706, solving the first equivalent relation and the second equivalent relation to obtain the characteristic impedance corresponding to the ith frequency.
The characteristic impedance corresponding to the i-th frequency can be calculated, for example, according to the following expression:
wherein Z is 0 Representing the characteristic impedance corresponding to the i-th frequency.
By combining the above expressions (9) to (19), the characteristic impedance Z corresponding to the ith frequency can be calculated 0 . By the above expression, the characteristic impedance corresponding to each frequency can be calculated. After the characteristic impedance corresponding to each frequency is calculated, the characteristic impedance Z_new which can be changed along with the frequency is Z which can be changed along with the frequency 0 。
It should be noted that, in the above process, the characteristic impedance corresponding to each frequency is calculated by an optimization algorithm, and in other embodiments, the characteristic impedance corresponding to each frequency may be calculated by other manners, which is not limited in this application.
S103, respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structural member under each frequency to the characteristic impedance corresponding to each frequency, and obtaining the first circuit transmission characteristic parameter of the target standard structural member under each frequency after the impedance adjustment.
According to some embodiments of the present application, optionally, S103 may include the steps of:
for any ith frequency, based on a target impedance change function, adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structural member under the ith frequency to the characteristic impedance corresponding to the ith frequency to obtain the first circuit transmission characteristic parameter of the target standard structural member under the ith frequency after impedance adjustment, wherein i is a positive integer.
The target impedance change function may include, for example, an S2S impedance change function in mathematical software. Based on the target impedance change function, the impedance corresponding to the S parameter of the target standard structural member at the ith frequency can be adjusted to be the characteristic impedance corresponding to the ith frequency, for example, the impedance corresponding to the S parameter of the target standard structural member at the ith frequency is adjusted from the target impedance (e.g. 50 ohms) to be the characteristic impedance corresponding to the ith frequency. Along with the change of the impedance corresponding to the S parameter, the S parameter is correspondingly changed, so that the S parameter of the target standard structural member with the impedance adjusted under the ith frequency is obtained.
In some examples, for example, the impedance corresponding to the S parameter of the through calibration structure 30, the reflection calibration structure 40, the first delay calibration structure 50, the second delay calibration structure 60, and the measured structure 20 at the ith frequency may be adjusted to the characteristic impedance corresponding to the ith frequency, so as to obtain the S parameter of the through calibration structure 30, the reflection calibration structure 40, the first delay calibration structure 50, the second delay calibration structure 60, and the measured structure 20 after the impedance is adjusted.
S104, obtaining the first circuit transmission characteristic parameters of the measured piece at each frequency based on the first circuit transmission characteristic parameters of the target standard structural piece at each frequency after impedance adjustment and a target calibration algorithm.
According to some embodiments of the present application, optionally, S104 may include the steps of:
and obtaining the first circuit transmission characteristic parameters of the measured piece under each frequency based on the first circuit transmission characteristic parameters of the target delay calibration structural piece, the direct connection calibration structural piece and the reflection calibration structural piece under each frequency after the impedance adjustment and a target calibration algorithm.
Wherein the target delay calibration structure may comprise any one of a first delay calibration structure and a second delay calibration structure. That is, the S parameters of the measured piece at each frequency can be solved by using the S parameters of any one of the first delay calibration structure and the second delay calibration structure after the impedance adjustment, the through calibration structure and the reflection calibration structure at each frequency.
The following description will take the target calibration algorithm as an example of the TRL algorithm.
Fig. 9 is a schematic diagram of an implementation principle of the TRL algorithm. As shown in FIG. 9, by substituting the impedance transformed S parameter into the TRL algorithm, an error box between the measurement reference surface and the calibration reference surface, i.e., a first error Fixture A and a second error Fixture B, can be calculated.
The first error Fixture A may be expressed as:the second error Fixture B may be expressed asThe TRL calibrated error model contains eight parameters, a, b, c, r, α, β, ε, ρ.
The TRL calibration is convenient for calculation to convert the S parameter into the T parameter for solving, and the transmission parameter with the straight-through calibration structural member is expressed asReflection parameter Γ for reflection calibration structure r To indicate that a transmission line (line) of any length is used as a transmission parameter +.>To characterize. And completely solving by utilizing T parameters of the straight-through calibration structural member, the target delay calibration structural member and the reflection calibration structural member to obtain TRL input and output error boxes of characteristic impedance changing along with the frequency. T (T) M ＝T a T d T b . Wherein T is M Representing the junction to be testedT parameter of the component, T d And the T parameter of the measured piece is represented.
Fig. 10 is a schematic flow chart of step S104 in the deblocking method according to the embodiment of the present application. As shown in fig. 10, according to some embodiments of the present application, optionally, S104, obtaining the first circuit transmission characteristic parameters of the measured piece at each frequency based on the first circuit transmission characteristic parameters of the target delay calibration structure, the through calibration structure, and the reflection calibration structure after the impedance adjustment and the target calibration algorithm may include the following steps S1001 to S1005.
S1001, for any ith frequency, converting a first circuit transmission characteristic parameter of a straight-through calibration structural member and a target delay calibration structural member under the ith frequency into a second circuit transmission characteristic parameter, wherein i is a positive integer.
Wherein the second circuit transmission characteristic parameter may include a T parameter. In S1001, for any ith frequency, the S parameters of the pass through calibration structure and the target delay calibration structure at the ith frequency may be converted to T parameters.
S1002, constructing a transmission parameter relation based on the transmission characteristic parameters of the second circuit of the straight-through calibration structural member and the target delay calibration structural member under the ith frequency.
And constructing a transmission parameter relation according to the T parameters of the straight-through calibration structural member and the target delay calibration structural member under the ith frequency.
The transmission parameter relation is as follows:
according to T th ＝T a T b ,T L ＝T a T line T b Cβ, rρ can be solved.
According toDeducing T b T tl ＝T L T b Thus, a/c, b are solved.
According toDeducing T lt T a ＝T a T L From this, α/β, ε are solved.
Wherein T is th T parameter, T, representing the i-th frequency of the straight-through calibration structure L T parameter, T, representing the target delay calibration structure at the ith frequency tl Representing the transition between the T parameter of the straight-through calibration structure at the ith frequency and the T parameter of the target delay calibration structure at the ith frequency, T lt Representing the transition between the T parameter of the target delay calibration structure at the i-th frequency and the T parameter of the pass-through calibration structure at the i-th frequency.
S1003, constructing a reflection parameter relation based on the first circuit transmission characteristic parameter of the reflection calibration structural member at the ith frequency.
Thereby push out +.>
Wherein,s11 parameter, which indicates the ith frequency of the reflection calibration structure, ">The S22 parameter at the ith frequency is shown for the reflective alignment structure.
Thus, the reflection parameter relationship can be deduced as:
s1004, solving a first error and a second error between the measurement reference surface and the calibration reference surface based on the transmission parameter relation and the reflection parameter relation.
Substituting a/c, b, alpha/beta, epsilon, cbeta, rρ solved based on transmission parameter relation into reflection parameter relationTied typeAnd (3) solving eight parameters of a, b, c, r, alpha, beta, epsilon and rho. />
Thus, an error box between the measurement reference plane and the calibration reference plane at the characteristic impedance of the ith frequency, i.e., the first error Fixture A and the second error Fixture B, can be obtained.
S1005, determining the first circuit transmission characteristic parameter of the tested piece at the ith frequency according to the first circuit transmission characteristic parameter, the first error and the second error of the tested piece at the ith frequency.
After the first error Fixture A and the second error Fixture B are obtained, the S parameter of the DUT at the ith frequency can be calculated.
Through the steps, the S parameters of the DUT under each frequency can be calculated.
According to some embodiments of the present application, optionally, S105, adjusting the impedance of the first circuit transmission characteristic parameter of the measured piece at each frequency to be a target impedance, to obtain the first circuit transmission characteristic parameter of the measured piece after the impedance adjustment may include the following steps:
for any ith frequency, adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the tested piece under the ith frequency to be target impedance based on a target impedance change function, and obtaining the first circuit transmission characteristic parameter of the tested piece under the ith frequency after impedance adjustment, wherein i is a positive integer.
The target impedance change function may include, for example, an S2S impedance change function in mathematical software. Based on the target impedance change function, the impedance corresponding to the S parameter of the measured piece at the ith frequency can be adjusted from the characteristic impedance corresponding to the ith frequency to the target impedance, for example, the impedance corresponding to the S parameter of the measured piece at the ith frequency is adjusted from the characteristic impedance corresponding to the ith frequency to the target impedance (e.g. 50 ohms). Along with the change of the impedance corresponding to the S parameter, the S parameter is correspondingly changed, so that the S parameter of the measured piece under the ith frequency after the impedance is adjusted is obtained.
The target impedance can be flexibly adjusted according to practical situations, which is not limited in the application. The S parameter of the measured piece after the impedance adjustment is obtained by adjusting the impedance of the S parameter of the measured piece at each frequency to be the target impedance, so that the problem of impedance assumption of a transmission line of the target impedance can be solved, and the S parameter of the measured piece after the de-embedding is obtained.
In some examples, the target impedance may comprise 50 ohms, for example. That is, the impedance of the S parameter of the measured object at each frequency is adjusted to 50 ohms, and the S parameter of the measured object after the de-embedding is obtained.
Fig. 11 is a schematic diagram of a deblocking effect of a TRL algorithm of the related art. As shown in fig. 11, the abscissas of a, b, c, and d in fig. 11 each represent frequency in GHz, and the ordinates of a, b, c, and d in fig. 11 each represent amplitude. Wherein a corresponds to the S11 parameter, b corresponds to the S12 parameter, c corresponds to the S21 parameter, and d corresponds to the S22 parameter. The abscissas of e, f, g and h in fig. 11 each represent frequency in GHz, and the ordinates of e, f, g and h in fig. 11 each represent phase. Wherein e corresponds to the S11 parameter, f corresponds to the S12 parameter, g corresponds to the S21 parameter, and h corresponds to the S22 parameter. The solid line in fig. 11 can be understood as an actual result obtained by measurement, and the broken line can be understood as a calculation result obtained by the TRL algorithm de-embedding. As shown in fig. 11, the related art does not consider the de-embedding error caused by the characteristic impedance varying with the frequency, the deviation between the calculated result obtained by the TRL algorithm de-embedding and the actual result is large, and the de-embedding accuracy is low.
Fig. 12 is a schematic diagram illustrating a deblocking effect of a deblocking method according to an embodiment of the present application. As shown in fig. 12, the abscissas of a, b, c, and d in fig. 12 each represent frequency in GHz, and the ordinates of a, b, c, and d in fig. 12 each represent amplitude. Wherein a corresponds to the S11 parameter, b corresponds to the S12 parameter, c corresponds to the S21 parameter, and d corresponds to the S22 parameter. The abscissas of e, f, g and h in fig. 12 each represent frequency in GHz, and the ordinates of e, f, g and h in fig. 12 each represent phase. Wherein e corresponds to the S11 parameter, f corresponds to the S12 parameter, g corresponds to the S21 parameter, and h corresponds to the S22 parameter. The solid line in fig. 12 may be understood as an actual result obtained by measurement, and the broken line may be understood as a calculation result obtained by the deblocking method of the embodiment of the present application. As shown in fig. 12, in the embodiment of the present application, the influence of the characteristic impedance varying with the frequency on the de-embedding accuracy is considered, first, the characteristic impedance corresponding to each frequency is calculated, then, the S parameter of the characteristic impedance corresponding to each frequency is adjusted to be substituted into the TRL algorithm, so as to obtain the S parameter of the measured piece after the de-embedding error caused by the characteristic impedance of each frequency is removed, and the de-embedding error caused by the characteristic impedance of each frequency is reduced or even removed.
The deviation between the calculated result obtained by the de-embedding method and the actual result is smaller, and the de-embedding accuracy is higher.
The embodiment of the application overcomes the defects of an L-2L algorithm, and can realize the extraction of characteristic impedance along with the change of frequency through 2 transmission lines with GSG pads of any length, thereby realizing flexible test.
The embodiment of the application overcomes the frequency range limitation of the TRL algorithm, can remove the de-embedding error introduced by the characteristic impedance along with the frequency change, improves the de-embedding accuracy, and is not only suitable for low-frequency de-embedding, but also suitable for high-frequency or ultrahigh-frequency de-embedding.
According to the embodiment of the application, the problem of assumption of the impedance of the transmission line with the target impedance (such as 50 ohms) is solved by taking the fact that the loss of the substrate of the MOS process is large and extracting the characteristic impedance of each frequency into consideration, so that the de-embedding accuracy is improved.
Based on the de-embedding method provided by the embodiment, correspondingly, the application also provides a specific implementation mode of the de-embedding device. Please refer to the following examples.
Fig. 13 is a schematic structural diagram of a de-embedding device according to an embodiment of the present application. As shown in fig. 13, the de-embedding device 1300 provided in the embodiment of the present application may include the following modules:
the obtaining module 1301 is configured to obtain a first circuit transmission characteristic parameter of a target standard structural component under multiple frequencies, where the target standard structural component includes a calibration structural component and a tested structural component, the tested structural component includes a detection pad, a transmission line, and a tested component, and the detection pad is electrically connected with the tested component through the transmission line;
A first calculation module 1302, configured to obtain a characteristic impedance corresponding to each frequency based on a first circuit transmission characteristic parameter of the target standard structural member at each frequency;
the first adjusting module 1303 is configured to adjust impedances corresponding to the first circuit transmission characteristic parameters of the target standard structural member under each frequency to characteristic impedances corresponding to each frequency, so as to obtain the first circuit transmission characteristic parameters of the target standard structural member under each frequency after the impedances are adjusted;
the second calculation module 1304 is configured to obtain a first circuit transmission characteristic parameter of the measured piece at each frequency based on the first circuit transmission characteristic parameter of the target standard structural piece at each frequency after the impedance adjustment and the target calibration algorithm;
the second adjusting module 1305 is configured to adjust the impedance of the first circuit transmission characteristic parameter of the measured object at each frequency to be a target impedance, and obtain the first circuit transmission characteristic parameter of the measured object after the impedance is adjusted.
In the de-embedding device provided by the embodiment of the application, the influence of the characteristic impedance changing along with the frequency on the de-embedding accuracy is considered, and the characteristic impedance corresponding to each frequency is obtained firstly based on the first circuit transmission characteristic parameters (such as S parameters) of the target standard structural member under each frequency; then, respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameters of the target standard structural member under each frequency to characteristic impedance corresponding to each frequency to obtain the first circuit transmission characteristic parameters of the target standard structural member under each frequency after impedance adjustment, namely obtaining the first circuit transmission characteristic parameters of the target standard structural member influenced by the characteristic impedance changing along with the frequency; then, based on the first circuit transmission characteristic parameters of the target standard structural member with the impedance adjusted under each frequency and a target calibration algorithm, obtaining the first circuit transmission characteristic parameters of the measured member under each frequency; and finally, adjusting the impedance of the first circuit transmission characteristic parameters of the measured piece under each frequency to be target impedance, obtaining the first circuit transmission characteristic parameters of the measured piece after the impedance is adjusted, and obtaining the first circuit transmission characteristic parameters of the measured piece after the de-embedding errors caused by the characteristic impedance of each frequency are removed. Therefore, the embodiment of the application improves the de-embedding accuracy by removing the de-embedding error caused by the characteristic impedance changing along with the frequency, overcomes the frequency range limitation of the traditional de-embedding method, and can achieve better de-embedding effect in a wider frequency range (such as lower frequency or higher frequency).
According to some embodiments of the present application, optionally, the alignment structures include a pass-through alignment structure, a reflection alignment structure, and a delay alignment structure, the delay alignment structure including a first delay alignment structure and a second delay alignment structure; the direct connection calibration structural member comprises two groups of short-circuited detection pads, the reflection calibration structural member comprises two groups of open-circuited detection pads, the first delay calibration structural member comprises two groups of detection pads and a first detection line of a first length, the two groups of detection pads are connected through the first detection line, the second delay calibration structural member comprises two groups of detection pads and a second detection line of a second length, and the two groups of detection pads are connected through the second detection line.
Optionally, the first calculating module 1302 is specifically configured to construct, for any ith frequency, a first actual ABCD matrix of the first delay calibration structure according to a first circuit transmission characteristic parameter of the first delay calibration structure at the ith frequency, where i is a positive integer; constructing a second actual ABCD matrix of the second delay calibration structural member according to the first circuit transmission characteristic parameter of the second delay calibration structural member at the ith frequency; obtaining a first theoretical ABCD matrix of the first delay calibration structural member according to the theoretical ABCD matrix of the detection bonding pad and the theoretical ABCD matrix of the first transmission line; obtaining a second theoretical ABCD matrix of the second delay calibration structural member according to the theoretical ABCD matrix of the detection bonding pad and the theoretical ABCD matrix of the second transmission line; establishing a first equivalent relation between a first actual ABCD matrix and a first theoretical ABCD matrix, and establishing a second equivalent relation between a second actual ABCD matrix and a second theoretical ABCD matrix; and solving the first equivalent relation and the second equivalent relation to obtain the characteristic impedance corresponding to the ith frequency.
Optionally, according to some embodiments of the present application, the first equivalent relation comprises:
wherein,representing a first actual ABCD matrix,/and->Representing the a parameter in the first actual ABCD matrix,represents the B parameter in the first actual ABCD matrix, and (2)>Representing the C parameter in the first actual ABCD matrix, and (2)>Represents the D parameter in the first actual ABCD matrix, [ TL ] l1 ]Represents a first theoretical ABCD matrix, A 0 、B 0 、C 0 And D 0 Respectively represent A parameter, B parameter, C parameter and D parameter corresponding to the detection bonding pad in the first theoretical ABCD matrix, A L1 、B L1 、C L1 And D L1 Respectively representing an A parameter, a B parameter, a C parameter and a D parameter corresponding to a first transmission line in a first theoretical ABCD matrix;
the second equivalent relationship includes:
wherein,representing a second actual ABCD matrix, +.>Representing A in a second actual ABCD matrix
The parameters of the parameters are set to be,represents the B parameter in the second actual ABCD matrix, and (2)>Represent the firstC parameter in two actual ABCD matrices, < ->Representing the D parameter in the second actual ABCD matrix, [ TL ] l2 ]Represents a second theoretical ABCD matrix, A 0 、B 0 、C 0 And D 0 Respectively represent A parameter, B parameter, C parameter and D parameter corresponding to the detection bonding pad in the second theoretical ABCD matrix, A L2 、B L2 、C L2 And D L2 And respectively representing an A parameter, a B parameter, a C parameter and a D parameter corresponding to a second transmission line in the second theoretical ABCD matrix.
Optionally, according to some embodiments of the present application, the first calculating module 1302 is specifically configured to calculate the characteristic impedance corresponding to the ith frequency according to the following expression:
wherein Z is 0 Representing the characteristic impedance corresponding to the i-th frequency.
According to some embodiments of the present application, optionally, the first adjusting module 1303 is specifically configured to, for any ith frequency, adjust, based on a target impedance change function, an impedance corresponding to a first circuit transmission characteristic parameter of the target standard structural member at the ith frequency to a characteristic impedance corresponding to the ith frequency, so as to obtain the first circuit transmission characteristic parameter of the target standard structural member after the impedance adjustment at the ith frequency, where i is a positive integer.
According to some embodiments of the present application, optionally, the second calculating module 1304 is specifically configured to obtain the first circuit transmission characteristic parameter of the measured piece at each frequency based on the first circuit transmission characteristic parameters of the target delay calibration structure, the through calibration structure, and the reflection calibration structure after the impedance adjustment and the target calibration algorithm; the target delay calibration structure comprises any one of a first delay calibration structure and a second delay calibration structure.
Optionally, the second calculating module 1304 is specifically configured to convert, for any one ith frequency, the first circuit transmission characteristic parameters of the through calibration structure and the target delay calibration structure at the ith frequency to the second circuit transmission characteristic parameters, i being a positive integer; constructing a transmission parameter relation based on the transmission characteristic parameters of the second circuit of the through calibration structural member and the target delay calibration structural member under the ith frequency; constructing a reflection parameter relation based on a first circuit transmission characteristic parameter of the reflection calibration structural member at the ith frequency; based on the transmission parameter relation and the reflection parameter relation, solving a first error and a second error between the measurement reference surface and the calibration reference surface; and determining the first circuit transmission characteristic parameter of the tested piece at the ith frequency according to the first circuit transmission characteristic parameter, the first error and the second error of the tested piece at the ith frequency.
According to some embodiments of the present application, optionally, the second adjusting module 1305 is specifically configured to, for any one ith frequency, adjust, based on a target impedance change function, an impedance corresponding to a first circuit transmission characteristic parameter of the measured piece at the ith frequency to be a target impedance, so as to obtain the first circuit transmission characteristic parameter of the measured piece at the ith frequency after the impedance adjustment, where i is a positive integer.
Each module/unit in the apparatus shown in fig. 13 has a function of implementing each step in the de-embedding method provided in the above method embodiment, and can achieve the corresponding technical effects, which are not described herein for brevity.
Based on the de-embedding method provided by the embodiment, correspondingly, the application also provides a specific implementation mode of the electronic equipment. Please refer to the following examples.
Fig. 14 shows a schematic hardware structure of an electronic device according to an embodiment of the present application.
The electronic device may include a processor 1401 and a memory 1402 storing computer program instructions.
In particular, the processor 1401 described above may include a central processing unit (Central Processing Unit, CPU), or an application specific integrated circuit (Application Specific Integrated Circuit, ASIC), or may be configured to implement one or more integrated circuits of embodiments of the present application.
Memory 1402 may include mass storage for data or instructions. By way of example, and not limitation, memory 1402 may comprise a Hard Disk Drive (HDD), floppy Disk Drive, flash memory, optical Disk, magneto-optical Disk, magnetic tape, or universal serial bus (Universal Serial Bus, USB) Drive, or a combination of two or more of the foregoing. In one example, memory 1402 may include removable or non-removable (or fixed) media, or memory 1402 is a non-volatile solid state memory. Memory 1402 may be internal or external to the electronic device.
In one example, memory 1402 may be Read Only Memory (ROM). In one example, the ROM may be mask-programmed ROM, programmable ROM (PROM), erasable PROM (EPROM), electrically Erasable PROM (EEPROM), electrically rewritable ROM (EAROM), or flash memory, or a combination of two or more of these.
Memory 1402 may include read-only memory (ROM), random-access memory (RAM), magnetic disk storage media devices, optical storage media devices, flash memory devices, electrical, optical, or other physical/tangible memory storage devices. Thus, in general, the memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software comprising computer-executable instructions and when the software is executed (e.g., by one or more processors) it is operable to perform the operations described with reference to a method according to an aspect of the present application.
The processor 1401 reads and executes the computer program instructions stored in the memory 1402 to implement the methods/steps in the above-mentioned method embodiments, and achieves the corresponding technical effects achieved by the method embodiments executing the methods/steps thereof, which are not described herein for brevity.
In one example, the electronic device may also include a communication interface 1403 and a bus 1410. As shown in fig. 14, the processor 1401, the memory 1402, and the communication interface 1403 are connected to each other through a bus 1410, and perform communication with each other.
The communication interface 1403 is mainly used to implement communication between each module, apparatus, unit and/or device in the embodiments of the present application.
The bus 1410 includes hardware, software, or both that couple the components of the electronic device to one another. By way of example, and not limitation, the buses may include an accelerated graphics port (Accelerated Graphics Port, AGP) or other graphics Bus, an enhanced industry standard architecture (Extended Industry Standard Architecture, EISA) Bus, a Front Side Bus (FSB), a HyperTransport (HT) interconnect, an industry standard architecture (Industry Standard Architecture, ISA) Bus, an infiniband interconnect, a Low Pin Count (LPC) Bus, a memory Bus, a micro channel architecture (MCa) Bus, a Peripheral Component Interconnect (PCI) Bus, a PCI-Express (PCI-X) Bus, a Serial Advanced Technology Attachment (SATA) Bus, a video electronics standards association local (VLB) Bus, or other suitable Bus, or a combination of two or more of the above. Bus 1410 may include one or more buses, where appropriate. Although embodiments of the present application describe and illustrate a particular bus, the present application contemplates any suitable bus or interconnect.
In addition, in combination with the method for de-embedding in the above embodiment, the embodiment of the application may be implemented by providing a computer readable storage medium. The computer readable storage medium has stored thereon computer program instructions; the computer program instructions, when executed by a processor, implement any of the de-embedding methods of the above embodiments. Examples of computer readable storage media include non-transitory computer readable storage media such as electronic circuits, semiconductor memory devices, ROMs, random access memories, flash memories, erasable ROMs (EROM), floppy disks, CD-ROMs, optical disks, hard disks.
It should be clear that the present application is not limited to the particular arrangements and processes described above and illustrated in the drawings. For the sake of brevity, a detailed description of known methods is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method processes of the present application are not limited to the specific steps described and illustrated, and those skilled in the art can make various changes, modifications, and additions, or change the order between steps, after appreciating the spirit of the present application.
The functional blocks shown in the above-described structural block diagrams may be implemented in hardware, software, firmware, or a combination thereof. When implemented in hardware, it may be, for example, an electronic circuit, an application specific integrated circuit (Application Specific Integrated Circuit, ASIC), suitable firmware, a plug-in, a function card, or the like. When implemented in software, the elements of the present application are the programs or code segments used to perform the required tasks. The program or code segments may be stored in a machine readable medium or transmitted over transmission media or communication links by a data signal carried in a carrier wave. A "machine-readable medium" may include any medium that can store or transfer information. Examples of machine-readable media include electronic circuitry, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio Frequency (RF) links, and the like. The code segments may be downloaded via computer networks such as the internet, intranets, etc.
It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, the present application is not limited to the order of the above-described steps, that is, the steps may be performed in the order mentioned in the embodiments, may be different from the order in the embodiments, or several steps may be performed simultaneously.
Aspects of the present application are described above with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the application. It will be understood that each block of the flowchart illustrations and/or block diagrams, and combinations of blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, enable the implementation of the functions/acts specified in the flowchart and/or block diagram block or blocks. Such a processor may be, but is not limited to being, a general purpose processor, a special purpose processor, an application specific processor, or a field programmable logic circuit. It will also be understood that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware which performs the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In the foregoing, only the specific embodiments of the present application are described, and it will be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working processes of the systems, modules and units described above may refer to the corresponding processes in the foregoing method embodiments, which are not repeated herein. It should be understood that the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive various equivalent modifications or substitutions within the technical scope of the present application, which are intended to be included in the scope of the present application.

Claims (10)

1. A method of de-embedding, comprising:
acquiring first circuit transmission characteristic parameters of a target standard structural member under a plurality of frequencies, wherein the target standard structural member comprises a calibration structural member and a tested structural member, the tested structural member comprises a detection welding pad, a transmission line and a tested member, and the detection welding pad is electrically connected with the tested member through the transmission line;
obtaining characteristic impedance corresponding to each frequency based on a first circuit transmission characteristic parameter of the target standard structural member under each frequency;
respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameters of the target standard structural member under each frequency to characteristic impedance corresponding to each frequency to obtain the first circuit transmission characteristic parameters of the target standard structural member under each frequency after impedance adjustment;
Obtaining first circuit transmission characteristic parameters of the tested piece under each frequency based on the first circuit transmission characteristic parameters of the target standard structural piece under each frequency after impedance adjustment and a target calibration algorithm;
and adjusting the impedance of the first circuit transmission characteristic parameter of the measured piece under each frequency to be a target impedance to obtain the first circuit transmission characteristic parameter of the measured piece after impedance adjustment.
2. The de-embedding method of claim 1, wherein the alignment structures comprise a pass-through alignment structure, a reflection alignment structure, and a delay alignment structure, the delay alignment structure comprising a first delay alignment structure and a second delay alignment structure;
the direct connection calibration structure comprises two groups of short-circuited detection pads, the reflection calibration structure comprises two groups of open-circuit detection pads, the first delay calibration structure comprises two groups of detection pads and a first detection line with a first length, the two groups of detection pads are connected through the first detection line, the second delay calibration structure comprises two groups of detection pads and a second detection line with a second length, and the two groups of detection pads are connected through the second detection line.
3. The de-embedding method according to claim 2, wherein the obtaining the characteristic impedance corresponding to each frequency based on the first circuit transmission characteristic parameter of the target standard structure at each frequency includes:
for any ith frequency, constructing a first actual ABCD matrix of the first delay calibration structural member according to a first circuit transmission characteristic parameter of the first delay calibration structural member under the ith frequency, wherein i is a positive integer;
constructing a second actual ABCD matrix of the second delay calibration structural member according to a first circuit transmission characteristic parameter of the second delay calibration structural member at the ith frequency;
obtaining a first theoretical ABCD matrix of the first delay calibration structural member according to the theoretical ABCD matrix of the detection bonding pad and the theoretical ABCD matrix of the first transmission line;
obtaining a second theoretical ABCD matrix of the second delay calibration structural member according to the theoretical ABCD matrix of the detection bonding pad and the theoretical ABCD matrix of the second transmission line;
establishing a first equivalent relation between the first actual ABCD matrix and the first theoretical ABCD matrix, and establishing a second equivalent relation between the second actual ABCD matrix and the second theoretical ABCD matrix;
And solving the first equivalent relation and the second equivalent relation to obtain the characteristic impedance corresponding to the ith frequency.
4. The method of de-embedding of claim 3, wherein the first equivalent relationship comprises:
wherein,representing said first actual ABCD matrix, < >>Representing the A parameter in said first actual ABCD matrix,/and->Representing the B parameter in said first actual ABCD matrix,/and->Representing the C parameter in said first actual ABCD matrix,/and->Represents the D parameter, [ TL ] in the first actual ABCD matrix l1 ]Representing the first theoretical ABCD matrix, A 0 、B 0 、C 0 And D 0 Respectively representing A parameter, B parameter, C parameter and D parameter corresponding to the detection bonding pad in the first theoretical ABCD matrix, A L1 、B L1 、C L1 And D L1 Respectively representing an A parameter, a B parameter, a C parameter and a D parameter corresponding to the first transmission line in the first theoretical ABCD matrix;
the second equivalent relationship includes:
wherein,representing said second actual ABCD matrix,/v>Representing the A parameter in said second actual ABCD matrix,/and->Representing B parameters in said second actual ABCD matrix,/and->Representing the C parameter in said second actual ABCD matrix,/and->Representing the D parameter, [ TL ] in the second actual ABCD matrix l2 ]Representing the second theoretical ABCD matrix, A 0 、B 0 、C 0 And D 0 Respectively representing A parameter, B parameter, C parameter and D parameter corresponding to the detection bonding pad in the second theoretical ABCD matrix, A L2 、B L2 、C L2 And D L2 And respectively representing an A parameter, a B parameter, a C parameter and a D parameter corresponding to the second transmission line in the second theoretical ABCD matrix.
5. The method of de-embedding of claim 4, wherein solving the first equivalent relation and the second equivalent relation to obtain the characteristic impedance corresponding to the ith frequency comprises:
calculating the characteristic impedance corresponding to the ith frequency according to the following expression:
wherein Z is 0 Representing the characteristic impedance corresponding to the ith frequency.
6. The de-embedding method according to claim 1, wherein the adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structure at each frequency to the characteristic impedance corresponding to each frequency to obtain the first circuit transmission characteristic parameter of the target standard structure after the impedance adjustment includes:
for any ith frequency, adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structural member under the ith frequency to the characteristic impedance corresponding to the ith frequency based on a target impedance change function to obtain the first circuit transmission characteristic parameter of the target standard structural member under the ith frequency after impedance adjustment, wherein i is a positive integer.
7. The de-embedding method according to claim 2, wherein the obtaining the first circuit transmission characteristic parameters of the tested piece at each frequency based on the first circuit transmission characteristic parameters of the target standard structural piece at each frequency after the impedance adjustment and a target calibration algorithm includes:
obtaining first circuit transmission characteristic parameters of the tested piece under each frequency based on the target delay calibration structural piece after impedance adjustment, the first circuit transmission characteristic parameters of the direct calibration structural piece and the reflection calibration structural piece under each frequency and the target calibration algorithm;
the target delay calibration structure includes any one of the first delay calibration structure and the second delay calibration structure.
8. The de-embedding method according to claim 7, wherein the obtaining the first circuit transmission characteristic parameters of the measured piece at each frequency based on the first circuit transmission characteristic parameters of the target delay calibration structure, the pass-through calibration structure, and the reflection calibration structure after the impedance adjustment and the target calibration algorithm includes:
for any ith frequency, converting a first circuit transmission characteristic parameter of the through calibration structural member and the target delay calibration structural member under the ith frequency into a second circuit transmission characteristic parameter, wherein i is a positive integer;
Constructing a transmission parameter relation based on the transmission characteristic parameters of the second circuit of the straight-through calibration structural member and the target delay calibration structural member under the ith frequency;
constructing a reflection parameter relation based on a first circuit transmission characteristic parameter of the reflection calibration structural member at the ith frequency;
based on the transmission parameter relation and the reflection parameter relation, solving a first error and a second error between a measurement reference surface and a calibration reference surface;
and determining the first circuit transmission characteristic parameter of the tested piece under the ith frequency according to the first circuit transmission characteristic parameter of the tested piece under the ith frequency, the first error and the second error.
9. The method of de-embedding according to claim 1, wherein adjusting the impedance of the first circuit transmission characteristic parameter of the measured object at each frequency to a target impedance, to obtain the adjusted first circuit transmission characteristic parameter of the measured object, includes:
for any ith frequency, adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the tested piece under the ith frequency to be target impedance based on a target impedance change function, and obtaining the first circuit transmission characteristic parameter of the tested piece under the ith frequency after impedance adjustment, wherein i is a positive integer.
10. A de-embedding device, comprising:
the acquisition module is used for acquiring first circuit transmission characteristic parameters of a target standard structural member under a plurality of frequencies, the target standard structural member comprises a calibration structural member and a tested structural member, the tested structural member comprises a detection welding pad, a transmission line and a tested member, and the detection welding pad is electrically connected with the tested member through the transmission line;
the first calculation module is used for obtaining characteristic impedance corresponding to each frequency based on the first circuit transmission characteristic parameters of the target standard structural member under each frequency;
the first adjusting module is used for respectively adjusting the impedance corresponding to the first circuit transmission characteristic parameter of the target standard structural member under each frequency to the characteristic impedance corresponding to each frequency to obtain the first circuit transmission characteristic parameter of the target standard structural member under each frequency after the impedance is adjusted;
the second calculation module is used for obtaining the first circuit transmission characteristic parameters of the tested piece under each frequency based on the first circuit transmission characteristic parameters of the target standard structural piece under each frequency after the impedance adjustment and a target calibration algorithm;
and the second adjusting module is used for adjusting the impedance of the first circuit transmission characteristic parameter of the measured piece under each frequency to be target impedance, and obtaining the first circuit transmission characteristic parameter of the measured piece after impedance adjustment.
CN202311651066.2A 2023-12-05 2023-12-05 De-embedding method and de-embedding device Pending CN117630642A (en)

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CN202311651066.2A CN117630642A (en) 2023-12-05 2023-12-05 De-embedding method and de-embedding device

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Application Number Priority Date Filing Date Title
CN202311651066.2A CN117630642A (en) 2023-12-05 2023-12-05 De-embedding method and de-embedding device

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CN117630642A true CN117630642A (en) 2024-03-01

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