CN117625173A - Method for improving water stability of cesium bismuth bromine system quantum dots by using dendritic organic silicon molecules - Google Patents
Method for improving water stability of cesium bismuth bromine system quantum dots by using dendritic organic silicon molecules Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 14
- -1 cesium bismuth bromine Chemical compound 0.000 title claims abstract description 13
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims abstract description 49
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000002243 precursor Substances 0.000 claims abstract description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000084 colloidal system Substances 0.000 claims abstract description 13
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims abstract description 10
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims abstract description 10
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000005642 Oleic acid Substances 0.000 claims abstract description 10
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims abstract description 10
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims abstract description 10
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims abstract description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 230000004048 modification Effects 0.000 claims abstract description 7
- 238000012986 modification Methods 0.000 claims abstract description 7
- 238000011065 in-situ storage Methods 0.000 claims abstract description 6
- 239000003054 catalyst Substances 0.000 claims abstract description 5
- 238000001914 filtration Methods 0.000 claims abstract description 5
- 238000000746 purification Methods 0.000 claims abstract description 5
- 238000002390 rotary evaporation Methods 0.000 claims abstract description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 claims abstract description 4
- 239000013049 sediment Substances 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 27
- 239000011259 mixed solution Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 11
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 10
- TXKAQZRUJUNDHI-UHFFFAOYSA-K bismuth tribromide Chemical compound Br[Bi](Br)Br TXKAQZRUJUNDHI-UHFFFAOYSA-K 0.000 claims description 5
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 2
- 210000004443 dendritic cell Anatomy 0.000 claims 1
- 239000002159 nanocrystal Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910001451 bismuth ion Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Abstract
The invention discloses a method for improving the water stability of cesium bismuth bromine system quantum dots by dendritic organic silicon molecules, which uses Cu 2 O is used as a catalyst, chloropropyl trimethoxyl silane, glycol and liquid ammonia are mixed and reacted, and then the 3-aminopropyl trimethoxyl silane is obtained after separation after multiple rotary evaporation and purification; taking Cs 3 Bi 2 Br 9 Dropwise adding QDs precursor liquid and 3-aminopropyl trimethoxysilane into oleic acid and absolute ethyl alcohol respectivelyHeating and vigorously stirring to obtain a colloidal solution; after the colloid solution is cooled to room temperature, centrifuging, filtering out sediment at the bottom to obtain Cs based on in-situ modification of 3-aminopropyl trimethoxysilane 3 Bi 2 Br 9 QDs colloidal solution. The invention synthesizes the dendritic 3-aminopropyl trimethoxy silane with high purity rapidly through the intermediate under mild conditions, and further utilizes the intermediate to modify Cs 3 Bi 2 Br 9 QDs to improve its water stability.
Description
Technical Field
The invention belongs to the field of semiconductor materials, and particularly relates to a method for improving water stability of cesium bismuth bromine system quantum dots by using dendritic organic silicon molecules.
Background
Silicon coating is an effective means for improving the stability of perovskite nanocrystalline water, oxygen, light and heat. Moreover, the silicon is a transparent material, the optical performance of the perovskite nanocrystalline is not affected, and the silicon coating can greatly improve the stability of the perovskite nanocrystalline. In the traditional silicon coating method, tetraethyl orthosilicate (TEOS) is used as a precursor of silicon to be slowly hydrolyzed in a strong alkali environment, so that the decomposition of perovskite nanocrystals is further accelerated, and the stability of the perovskite nanocrystals is reduced. For example, a scientific research worker stirs the prepared perovskite nanocrystals with mesoporous silicon in a nonpolar solvent, and purifies the mixture to obtain a mesoporous silicon-coated composite, which has excellent thermal stability (angel. Chem. Int. Ed.,2016, 55:7924-7929). There are also researchers who pour the precursor solution of perovskite nanocrystals into silicon channels of different sizes and thermally initiate crystallization in vacuo to obtain a silicon-coated perovskite nanocrystalline composite (j.am.chem.soc., 2016, 138:13874-13881). Researches show that the mesoporous silicon not only can effectively improve the stability of perovskite nanocrystals, but also can regulate the particle size of the prepared perovskite nanocrystals through the size of a template, and further can regulate the fluorescence color through quantum confinement effect. However, the compatibility of the inorganic silicon material with the perovskite material is not good, and it may adversely affect the optical and electrical characteristics of the composite material.
Patent publication No. CN 107603614A discloses a preparation method of metal halide perovskite quantum dots, wherein hydroxyl is generated after fluorine reagent is hydrolyzed in the synthesis process, and under the combined action of the hydroxyl and a fluorocarbon chain, the stable CsPbBr3 perovskite quantum dots which are dispersed in water are obtained through self-assembly and tight coating on the surfaces of the quantum dots. The water dispersion stability is enhanced by means of surface coating.
The organic silicon has excellent characteristics of high and low temperature resistance, oxidation resistance stability, weather resistance, hydrophobicity, physiological inertia and the like, can be used for modifying perovskite nanocrystalline on a molecular level, and greatly improves the water stability of perovskite, in particular perovskite Quantum Dot (QDs) materials.
Disclosure of Invention
The invention aims to provide a preparation method for improving water stability of cesium-bismuth-bromine system quantum dots by dendritic organic silicon molecules, which comprises the steps of rapidly synthesizing high-purity dendritic 3-aminopropyl trimethoxysilane through an intermediate under a mild condition, and further modifying Cs by using the high-purity dendritic 3-aminopropyl trimethoxysilane 3 Bi 2 Br 9 QDs to improve their water stability and are used in fluorescent security materials.
The invention is realized by the following technical scheme. A method for improving the water stability of cesium bismuth bromine system quantum dots by using dendritic organic silicon molecules,
step 1: in Cu form 2 O is used as a catalyst, chloropropyl trimethoxyl silane, glycol and liquid ammonia are mixed and reacted, and then the 3-aminopropyl trimethoxyl silane is obtained after separation after multiple rotary evaporation and purification;
step 2: preparation of Cs 3 Bi 2 Br 9 QDs precursor liquid;
step 3: taking Cs 3 Bi 2 Br 9 Dropwise adding the QDs precursor solution and 3-aminopropyl trimethoxysilane into a mixed solution of oleic acid and absolute ethyl alcohol respectively, heating and vigorously stirring to obtain a colloidal solution; after the colloid solution is cooled to room temperature, centrifuging, filtering out sediment at the bottom to obtain the 3-aminopropyl trimethyl based solutionOxysilane in situ modified Cs 3 Bi 2 Br 9 QDs colloidal solution.
Further, the 3-aminopropyl trimethoxysilane is mixed with Cs 3 Bi 2 Br 9 The mass fraction of the QDs precursor liquid is 1% -20%.
Further, the mixed solution is a mixed solution of 0.5mL of oleic acid and 5mL of absolute ethanol.
In the step 1, chloropropyl trimethoxyl silane, ethylene glycol and liquid ammonia are mixed and reacted at 60-80 ℃.
Further, in the step 2, 0.0897g of bismuth bromide and 0.0638g of cesium bromide are mixed and dissolved in 1 mL of octylamine, and continuously stirred for 2 hours at room temperature, and then the mixture is dropwise added into a round bottom flask containing 50mL of dimethyl sulfoxide for reaction for 0.5 hour at 40-50 ℃ to obtain Cs 3 Bi 2 Br 9 QDs precursors.
Further, in the step 3, a certain amount of 3-aminopropyl trimethoxysilane is firstly dropwise added into a mixed solution of 0.5mL of oleic acid and 5mL of absolute ethyl alcohol, stirring is continued, and then 0.5. 0.5gCs is dropwise added 3 Bi 2 Br 9 The QDs precursor liquid is continuously stirred; the mixture was vigorously stirred at 60℃for 20min to give a colloidal solution.
Compared with the prior art, the invention has the beneficial effects that: dendritic 3-aminopropyl trimethoxy silane is prepared by chloropropyl trimethoxy silane and ethylene glycol, and ethylene glycol is used as a raw material, so that the surface property of the obtained aminopropyl trimethoxy silane is changed, the compatibility of the dendritic 3-aminopropyl trimethoxy silane molecules in the preparation of a colloidal solution is provided, and the dendritic 3-aminopropyl trimethoxy silane molecules can be used as Cs 3 Bi 2 Br 9 In-situ modification is carried out on the QDs colloid in the formation process, so that the Cs of water molecules in the surrounding environment is effectively reduced 3 Bi 2 Br 9 The destruction of QDs is expected to be used for stabilizing fluorescent anti-counterfeiting materials and achieving expected effects.
Drawings
FIG. 1 is a scheme for preparing 3-aminopropyl trimethoxysilane.
Fig. 2 shows the results of inductively coupled plasma spectroscopy.
FIG. 3 is a normal phase chromatogram of 3-aminopropyl trimethoxysilane obtained in example 1.
FIG. 4 shows the hydrogen spectrum of 3-aminopropyl trimethoxysilane obtained in example 1.
FIG. 5 is a carbon spectrum of 3-aminopropyl trimethoxysilane obtained in example 1.
Detailed Description
The present invention will be further described with reference to the following examples, but the present invention is not limited to the following examples.
The invention relates to a method for improving water stability of cesium bismuth bromine system quantum dots by using dendritic organic silicon molecules, which comprises the following specific steps:
step 1: preparing 3-aminopropyl trimethoxy silane. In Cu form 2 O is used as a catalyst, a certain amount of chloropropyl trimethoxyl silane, glycol and liquid ammonia are mixed and reacted for 12 hours at 60-80 ℃, and then 3 times of rotary evaporation and purification are carried out, and then the 3-aminopropyl trimethoxyl silane is obtained through separation.
Step 2: preparation of Cs 3 Bi 2 Br 9 QDs precursors. 0.0897g bismuth bromide and 0.0638g cesium bromide are mixed and dissolved in 1 mL octylamine, and continuously stirred for 2 hours at room temperature, and then the mixture is dropwise added into a round bottom flask containing 50mL dimethyl sulfoxide for reaction for 0.5 hour at 40-50 ℃ to obtain Cs 3 Bi 2 Br 9 QDs precursors.
Step 3: preparation of 3-aminopropyl trimethoxysilane modified Cs 3 Bi 2 Br 9 QDs colloid (absolute ethanol solvent) solution. A quantity of 3-aminopropyl trimethoxysilane was added dropwise to a mixture of 0.5mL oleic acid and 5mL absolute ethanol (continuous stirring) followed by 0.5g Cs 3 Bi 2 Br 9 The QDs precursor solution is added dropwise to the above mixed solution, and is continuously stirred. The mixture was vigorously stirred at 60℃for 20min to give a colloidal solution. After the colloid solution is cooled to room temperature, centrifuging for 10min at 10000rpm, filtering out precipitated large particles at the bottom to obtain Cs based on in-situ modification of 3-aminopropyl trimethoxysilane 3 Bi 2 Br 9 QDs colloid (absolute ethanol solvent) solution.
Example 1
Step 1: preparing 3-aminopropyl trimethoxy silane. In Cu form 2 O is used as a catalyst, a certain amount of chloropropyl trimethoxyl silane, ethylene glycol and liquid ammonia (the molar ratio is 1:1.2-1.5:3) are mixed and reacted for 12 hours at 70 ℃, 3 times of rotary evaporation and purification are carried out, and then 3-aminopropyl trimethoxyl silane is separated, and the analysis results are shown in figures 3-5.
Step 2: preparation of Cs 3 Bi 2 Br 9 QDs precursors. 0.0897g bismuth bromide and 0.0638g cesium bromide are mixed and dissolved in 1 mL octylamine, and continuously stirred for 2 hours at room temperature, and then the mixture is dropwise added into a round bottom flask containing 50mL dimethyl sulfoxide for reaction for 0.5 hour at 45 ℃ to obtain Cs 3 Bi 2 Br 9 QDs precursors.
Step 3: preparation of 3-aminopropyl trimethoxysilane modified Cs 3 Bi 2 Br 9 QDs colloid (absolute ethanol solvent) solution. 0.005g of 3-aminopropyl trimethoxysilane was added dropwise to a mixed solution of 0.5mL of oleic acid and 5mL of absolute ethanol (continuous stirring), followed by 0.5g of Cs 3 Bi 2 Br 9 The QDs precursor solution is added dropwise to the above mixed solution, and is continuously stirred. The mixture was vigorously stirred at 60℃for 20min to give a colloidal solution. After the colloid solution is cooled to room temperature, centrifuging for 10min at 10000rpm, filtering out precipitated large particles at the bottom to obtain Cs based on in-situ modification of 3-aminopropyl trimethoxysilane 3 Bi 2 Br 9 QDs colloid (absolute ethanol solvent) solution.
Example 2
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.01g.
Example 3
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.02g.
Example 4
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.03g.
Example 5
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.04g.
Example 6
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.05g.
Example 7
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.06g.
Example 8
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.07g.
Example 9
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.08g.
Example 10
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.09g.
Example 11
The other steps were the same as in example 1 except that the mass of 3-aminopropyl trimethoxysilane in step 3 was 0.1g.
Comparative example
Step 1: preparation of Cs 3 Bi 2 Br 9 QDs precursors. 0.0897g bismuth bromide and 0.0638g cesium bromide are mixed and dissolved in 1 mL octylamine, and continuously stirred for 2 hours at room temperature, and then the mixture is dropwise added into a round bottom flask containing 50mL dimethyl sulfoxide for reaction for 0.5 hour at 45 ℃ to obtain Cs 3 Bi 2 Br 9 QDs precursors.
Step 2: preparation of Cs 3 Bi 2 Br 9 QDs colloid (absolute ethanol solvent) solution. 0.5g Cs 3 Bi 2 Br 9 The QDs precursor solution was added dropwise to a mixed solution of 0.5mL oleic acid and 5mL absolute ethanol, and stirred continuously. The mixture was vigorously stirred at 60℃for 20min to give a colloidal solution. After the above colloid solution was cooled to room temperature, it was centrifuged at 10000rpm for 10min, and the bottom was filtered offLarge particles of precipitate to give Cs 3 Bi 2 Br 9 QDs colloid (absolute ethanol solvent) solution.
Cs is coated by dendritic 3-aminopropyl trimethoxysilane 3 Bi 2 Br 9 QDs are modified to reduce water to Cs 3 Bi 2 Br 9 Influence of QDs stability. In order to understand the fact that the initial concentration of bismuth ions in the system is strictly controlled to be the same before and after the modification of dendritic 3-aminopropyl trimethoxysilane, ultrapure water is used for purifying Cs 3 Bi 2 Br 9 QDs and dendritic 3-aminopropyl trimethoxysilane modified Cs 3 Bi 2 Br 9 QDs are diluted. Finally, the bismuth ion concentration in the aqueous solution is detected using inductively coupled plasma spectroscopy. As shown in FIG. 2, we use pure Cs 3 Bi 2 Br 9 The concentration of bismuth ions in the QDs sample was normalized, and then ultrapure water was used to purify Cs 3 Bi 2 Br 9 QDs and dendritic 3-aminopropyl trimethoxysilane modified Cs 3 Bi 2 Br 9 Dilution of QDs (quantum dots) shows that as the dendritic 3-aminopropyl trimethoxysilane increases, the bismuth ion concentration detected by the inductively coupled plasma spectrum is reduced from the initial 0.3975ppm to 0.0342ppm, which indicates that the dendritic 3-aminopropyl trimethoxysilane is modified to effectively improve the prepared Cs 3 Bi 2 Br 9 Water stability of QDs.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (6)
1. A method for improving water stability of cesium bismuth bromine system quantum dots by using dendritic organic silicon molecules is characterized by comprising the following steps:
step 1: in Cu form 2 O is used as a catalyst, chloropropyl trimethoxyl silane, glycol and liquid ammonia are mixed and reacted, and then the 3-aminopropyl trimethoxyl silane is obtained after separation after multiple rotary evaporation and purification;
step 2: preparation of Cs 3 Bi 2 Br 9 QDs precursor liquid;
step 3: taking Cs 3 Bi 2 Br 9 Dropwise adding the QDs precursor solution and 3-aminopropyl trimethoxysilane into a mixed solution of oleic acid and absolute ethyl alcohol respectively, heating and vigorously stirring to obtain a colloidal solution; after the colloid solution is cooled to room temperature, centrifuging, filtering out sediment at the bottom to obtain Cs based on in-situ modification of 3-aminopropyl trimethoxysilane 3 Bi 2 Br 9 QDs colloidal solution.
2. A method for improving water stability of cesium bismuth bromine system quantum dots by using dendritic organic silicon molecules is characterized in that 3-aminopropyl trimethoxysilane and Cs 3 Bi 2 Br 9 The mass fraction of the QDs precursor liquid is 1% -20%.
3. The method for improving the water stability of cesium bismuth bromine system quantum dots by using dendritic organic silicon molecules according to claim 1, wherein the mixed solution is a mixed solution of 0.5mL of oleic acid and 5mL of absolute ethyl alcohol.
4. The method for improving the water stability of cesium-bismuth-bromine system quantum dots by using dendritic organic silicon molecules according to claim 1, wherein in the step 1, chloropropyl trimethoxysilane, ethylene glycol and liquid ammonia are blended and reacted at 60-80 ℃.
5. The method for improving the water stability of cesium-bismuth-bromine system quantum dots by using dendritic organic silicon molecules according to claim 1, wherein in the step 2, 0.0897g of bismuth bromide and 0.0638g of cesium bromide are mixed and dissolved in 1 mL of octylamine, and continuously stirred for 2 hours at room temperature, and then the mixture is dropwise added into a round bottom flask containing 50mL of dimethyl sulfoxide for reaction for 0.5 hour at 40-50 ℃ to obtain Cs 3 Bi 2 Br 9 QDs precursors.
6. A dendritic cell according to claim 1A method for improving water stability of cesium-bismuth-bromine system quantum dots by using organosilicon molecules is characterized in that in the step 3, a certain amount of 3-aminopropyl trimethoxysilane is dropwise added into a mixed solution of 0.5mL of oleic acid and 5mL of absolute ethyl alcohol, stirring is continued, and then 0.5g of Cs is dropwise added 3 Bi 2 Br 9 The QDs precursor liquid is continuously stirred; the mixture was vigorously stirred at 60℃for 20min to give a colloidal solution.
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