CN117619706A - Polyimide resin coating method - Google Patents
Polyimide resin coating method Download PDFInfo
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- CN117619706A CN117619706A CN202311633476.4A CN202311633476A CN117619706A CN 117619706 A CN117619706 A CN 117619706A CN 202311633476 A CN202311633476 A CN 202311633476A CN 117619706 A CN117619706 A CN 117619706A
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- China
- Prior art keywords
- semiconductor substrate
- time
- polyimide resin
- speed
- resin solution
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 73
- 239000009719 polyimide resin Substances 0.000 title claims abstract description 70
- 238000000576 coating method Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000011248 coating agent Substances 0.000 claims abstract description 27
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 230000003068 static effect Effects 0.000 claims abstract description 7
- 150000003949 imides Chemical class 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 230000000052 comparative effect Effects 0.000 description 17
- 239000010410 layer Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2505/00—Polyamides
- B05D2505/50—Polyimides
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
A method for coating polyimide resin includes the steps of: s1, providing a semiconductor substrate, wherein the semiconductor substrate refers to a wafer in the process before the photoetching process is completed in the semiconductor process; s2, dripping polyimide resin solution to the center of the static semiconductor substrate; s3, after the polyimide resin solution is completely dripped, rotating the semiconductor substrate at a first speed for a first time; s4, immediately rotating the semiconductor substrate at a second rate for a second time after the first time of the step S3 is over, wherein the second rate is greater than the first rate; s5, immediately rotating the semiconductor substrate at a third speed for a third time after the second time of the step S4 is finished, wherein the third speed is controlled to be larger than the second speed; and S6, immediately after the third time of the step S5 is finished, rotating the semiconductor substrate at a fourth speed for a fourth time, wherein the fourth speed is larger than the third speed. Thus, the thickness of the polyimide resin solution spread over the entire semiconductor substrate is made uniform, thereby improving the performance and yield of the product.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing, and more particularly to a method for coating polyimide resin.
Background
The photoresist coating is completed in a photoresist coating unit of a photoresist homogenizing developing machine, and is responsible for coating the photoresist on the surface of the wafer to realize the designated thickness and uniformity. The photoresist coating is mainly divided into two stages, wherein the first step is to pre-wet the bottom of the wafer, so that the photoresist spin coating uniformity is better. The second step is photoresist spin coating, and the rotating speed is 1650rpm when the photoresist is sprayed; the photoresist is uniformly distributed on the whole wafer, and the wafer enters a high-speed rotation stage, so that the photoresist is uniformly distributed on the whole wafer by virtue of centrifugal force, and the redundant photoresist is thrown away.
The existing coating technology can make the film thickness and uniformity of the photoresist meet the requirements of the process, but the coating uniformity is poor due to the high viscosity of Polyimide (PI) when the polyimide is coated on the surface in this way.
Disclosure of Invention
In view of the problems in the background art, an object of the present disclosure is to provide a method of coating polyimide resin, which can make the thickness of a polyimide resin solution spread over the entire semiconductor substrate uniform.
Thus, a coating method of polyimide resin includes the steps of: s1, providing a semiconductor substrate, wherein the semiconductor substrate refers to a wafer in the process before the photoetching process is completed in the semiconductor process; s2, dripping polyimide resin solution to the center of the static semiconductor substrate; s3, after the imide resin solution is completely dripped, rotating the semiconductor substrate at a first speed for a first time; s4, immediately rotating the semiconductor substrate at a second rate for a second time after the first time of the step S3 is over, wherein the second rate is greater than the first rate; s5, immediately rotating the semiconductor substrate at a third speed for a third time after the second time of the step S4 is finished, wherein the third speed is controlled to be larger than the second speed; and S6, immediately after the third time of the step S5 is finished, rotating the semiconductor substrate at a fourth speed for a fourth time, wherein the fourth speed is larger than the third speed.
The beneficial effects of the present disclosure are as follows: in the polyimide resin coating method according to the present disclosure, the dropping of the polyimide resin solution of the amount of required coating thickness at the center position of the stationary semiconductor substrate is completed through step S2, and the semiconductor substrate is rotated through four speeds from full to fast of steps S3 to S6, so that the thickness of the polyimide resin solution spread over the entire semiconductor substrate is uniform, thereby improving the performance and yield of the product.
Drawings
Fig. 1 is a graph showing the uniformity after the polyimide resin solution of example 1 was applied.
Fig. 2 is a graph showing the uniformity after the polyimide resin solution of comparative example 1 was applied.
Fig. 3 is a graph showing the uniformity after the polyimide resin solution of comparative example 2 was applied.
Fig. 4 is a graph showing the uniformity after the coating of the polyimide resin solution of comparative example 3 was completed.
Detailed Description
The drawings illustrate embodiments of the present disclosure, and it is to be understood that the disclosed embodiments are merely examples of the disclosure that may be embodied in various forms and that, therefore, specific details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously practice the disclosure.
[ method for coating polyimide resin ]
The coating method of the polyimide resin according to the present disclosure includes the steps of:
s1, providing a semiconductor substrate, wherein the semiconductor substrate refers to a wafer in the process before the photoetching process is completed in the semiconductor process;
s2, dripping polyimide resin solution to the center of the static semiconductor substrate;
s3, after the polyimide resin solution is completely dripped, rotating the semiconductor substrate at a first speed for a first time;
s4, immediately rotating the semiconductor substrate at a second rate for a second time after the first time of the step S3 is over, wherein the second rate is greater than the first rate;
s5, immediately rotating the semiconductor substrate at a third speed for a third time after the second time of the step S4 is finished, wherein the third speed is controlled to be larger than the second speed;
and S6, immediately after the third time of the step S5 is finished, rotating the semiconductor substrate at a fourth speed for a fourth time, wherein the fourth speed is larger than the third speed.
In the polyimide resin coating method according to the present disclosure, the dropping of the polyimide resin solution of the amount of required coating thickness at the center position of the stationary semiconductor substrate is completed through step S2, and the semiconductor substrate is rotated through four speeds from full to fast of steps S3 to S6, so that the thickness of the polyimide resin solution spread over the entire semiconductor substrate is uniform, thereby improving the performance and yield of the product.
In one example, in step S3, rotating the semiconductor substrate at a first rate for a first time to flood the imide resin solution to a location from the center of the semiconductor substrate less than half the radius of the semiconductor substrate; in step S4, immediately after the end of the first time of step S3, rotating the semiconductor substrate at a second rate for a second time to flood the imide resin solution to a position from the center of the semiconductor substrate to a radius equal to half of the semiconductor substrate; in step S5, immediately after the second time of step S4 is completed, rotating the semiconductor substrate at a third speed for a third time to flood the imide resin solution to a position from the center of the semiconductor substrate to a radius greater than half the radius of the semiconductor substrate but less than the radius of the semiconductor substrate; in step S6, the semiconductor substrate is rotated at a fourth speed for a fourth time immediately after the third time of step S5 is ended so that the imide resin solution is spread from the center of the semiconductor substrate to a position equal to the radius of the semiconductor substrate.
In one example, the polyimide resin solution has a viscosity of not less than 2000cp. Further, the polyimide resin solution had a viscosity of 3000cp.
In one example, the solvent of the polyimide resin solution is 1-methyl-2-pyrrolidone, which accounts for 85-90% of the total polyimide resin solution by mass.
In one example, the semiconductor substrate includes a silicon base, a lower protective layer, a dielectric layer, and an upper protective layer in order from bottom to top. The lower and upper protective layers may be, but are not limited to, silicon nitride layers. The dielectric layer may be, but is not limited to, titanium.
In one example, in step S3, the first rate is controlled at 100.+ -. 10rpm for a time period of 2.+ -. 0.3S.
In one example, in step S4, the second rate is controlled at 400+ -20 rpm for a time of 1.5+ -0.2S.
In one example, in step S5, the third speed is controlled at 650+ -30 rpm for a time of 1.5+ -0.2S.
In an example, in step S6, the fourth speed is controlled toThe time is 1+/-0.1 s.
[ test ]
Example 1
Example 1 employs the following steps:
s1, providing a semiconductor substrate, wherein the semiconductor substrate refers to a wafer which is processed before a photoetching process is completed in a semiconductor process, the semiconductor substrate is a silicon base from bottom to top,Silicon nitride layer of->Titanium layer of->Is a silicon nitride layer of (a);
s2, dripping polyimide resin solution to the center of the static semiconductor substrate, wherein the solvent of the polyimide resin solution is 1-methyl-2-pyrrolidone accounting for 90% of the total polyimide resin solution by mass, and the viscosity of the polyimide resin solution is 3000cp;
s3, after the polyimide resin solution is completely dripped, rotating the semiconductor substrate at a first speed for a first time, wherein the first speed is controlled to be 100rpm, and the first time is 2S;
s4, immediately rotating the semiconductor substrate at a second speed for a second time after the first time in the step S3 is ended, wherein the second speed is controlled to be 400rpm, and the second time is 1.5S;
s5, immediately rotating the semiconductor substrate at a third speed for a third time after the second time of the step S4 is finished, wherein the third speed is controlled to be 650rpm, and the third time is 1.5S;
s6, immediately after the third time of the step S5 is finished, rotating the semiconductor substrate at a fourth speed for a fourth time, wherein the fourth speed is controlled to be 800rpm, and the fourth time is 1S.
That is, example 1 employed a four-step coating regime from full to fast at four rates.
Comparative example 1
Comparative example 1 employed the following steps:
s1, providing a semiconductor substrate, wherein the semiconductor substrate refers to a wafer which is processed before a photoetching process is completed in a semiconductor process, the semiconductor substrate is a silicon base from bottom to top,Silicon nitride layer of->Titanium layer of->Is a silicon nitride layer of (a);
s2, dripping polyimide resin solution to the center of the static semiconductor substrate, wherein the solvent of the polyimide resin solution is 1-methyl-2-pyrrolidone accounting for 90% of the total polyimide resin solution by mass, and the viscosity of the polyimide resin solution is 3000cp;
s3, after the polyimide resin solution is completely dripped, the semiconductor substrate is rotated at 500rpm for 6S.
I.e., comparative example 1 used a conventional single rate one-step coating.
Comparative example 2
Comparative example 2 employed the following steps:
s1, providing a semiconductor substrate, wherein the semiconductor substrate refers to a wafer which is processed before a photoetching process is completed in a semiconductor process, the semiconductor substrate is a silicon base from bottom to top,Silicon nitride layer of->Titanium layer of->Is a silicon nitride layer of (a);
s2, dripping polyimide resin solution to the center of the static semiconductor substrate, wherein the solvent of the polyimide resin solution is 1-methyl-2-pyrrolidone accounting for 90% of the total polyimide resin solution by mass, and the viscosity of the polyimide resin solution is 3000cp;
s3, after the polyimide resin solution is completely dripped, rotating the semiconductor substrate at a first speed for a first time, wherein the first speed is controlled at 150rpm, and the first time is 1.5S;
s4, immediately rotating the semiconductor substrate at a second speed for a second time after the first time in the step S3 is over, wherein the second speed is controlled to be 400rpm, and the second time is 2S;
and S5, immediately after the second time of the step S4 is ended, rotating the semiconductor substrate at a third speed for a third time, wherein the third speed is controlled to be 600rpm, and the third time is 2.5S.
That is, comparative example 2 adopts a three-step coating mode of three rates from full to fast.
Comparative example 3
Example 1 was repeated except that the fourth speed in step S6 was controlled at 830 rpm.
Fig. 1 to 4 are graphs for testing the uniformity after the end of the coating of the polyimide resin solutions of example 1 and comparative examples 1 to 3, respectively. Test the maximum, average and minimum values of the thickness of the polyimide resin solution after the end of coating were marked from top to bottom in FIGS. 1 to 4, measured in a KLA F5X film thickness meter
In FIG. 1, example 1 uses a four-step coating method at four speeds from full to fast, and the difference between the maximum value and the minimum value of the thickness of the polyimide resin solution is 43nm.
In fig. 2, comparative example 1 adopts a general single-rate one-step coating method, the difference between the maximum value and the minimum value of the thickness of the polyimide resin solution is 132nm, and the uniformity of the thickness of the polyimide resin solution of comparative example 1 is deteriorated as compared with example 1. Further, as seen from fig. 2, there is a defect in the polyimide resin solution in the center of the semiconductor substrate.
In fig. 3, comparative example 2 adopts a three-cloth coating method at three rates from full to fast, and the difference between the maximum value and the minimum value of the thickness of the polyimide resin solution is 70nm. In comparison with comparative example 1, comparative example 2 adopts a three-step coating method, and the uniformity of the thickness of the polyimide resin solution is improved but still has a large difference from example 1.
In fig. 4, comparative example 3 was such that the fourth rate 830rmp exceeded 820rpm, the difference between the maximum value and the minimum value of the thickness of the polyimide resin solution was 53nm, and the uniformity of the thickness of the polyimide resin solution was deteriorated as compared with example 1 and fig. 1. Further, as seen from fig. 4, the polyimide resin solution has a depression in the middle of the semiconductor substrate.
Claims (9)
1. A method for coating a polyimide resin, comprising the steps of:
s1, providing a semiconductor substrate, wherein the semiconductor substrate refers to a wafer in the process before the photoetching process is completed in the semiconductor process;
s2, dripping polyimide resin solution to the center of the static semiconductor substrate;
s3, after the polyimide resin solution is completely dripped, rotating the semiconductor substrate at a first speed for a first time;
s4, immediately rotating the semiconductor substrate at a second rate for a second time after the first time of the step S3 is over, wherein the second rate is greater than the first rate;
s5, immediately rotating the semiconductor substrate at a third speed for a third time after the second time of the step S4 is finished, wherein the third speed is controlled to be larger than the second speed;
and S6, immediately after the third time of the step S5 is finished, rotating the semiconductor substrate at a fourth speed for a fourth time, wherein the fourth speed is larger than the third speed.
2. The method for coating a polyimide resin according to claim 1, wherein,
in step S3, rotating the semiconductor substrate at a first rate for a first time to flood the imide resin solution to a position from the center of the semiconductor substrate to less than half the radius of the semiconductor substrate;
in step S4, immediately after the end of the first time of step S3, rotating the semiconductor substrate at a second rate for a second time to flood the imide resin solution to a position from the center of the semiconductor substrate to a radius equal to half of the semiconductor substrate;
in step S5, immediately after the second time of step S4 is completed, rotating the semiconductor substrate at a third speed for a third time to flood the imide resin solution to a position from the center of the semiconductor substrate to a radius greater than half the radius of the semiconductor substrate but less than the radius of the semiconductor substrate;
in step S6, the semiconductor substrate is rotated at a fourth speed for a fourth time immediately after the third time of step S5 is ended so that the imide resin solution is spread from the center of the semiconductor substrate to a position equal to the radius of the semiconductor substrate.
3. The method for coating a polyimide resin according to claim 1, wherein,
the polyimide resin solution has a viscosity of not less than 2000cp.
4. The method for coating a polyimide resin according to claim 3, wherein,
the polyimide resin solution had a viscosity of 3000cp.
5. The method for coating a polyimide resin according to claim 1, wherein,
the solvent of the polyimide resin solution is 1-methyl-2-pyrrolidone accounting for 85-90% of the total polyimide resin solution by mass.
6. The method for coating a polyimide resin according to claim 1, wherein,
in step S3, the first rate is controlled at 100.+ -. 10rpm for a period of 2.+ -. 0.3S.
7. The method for coating a polyimide resin according to claim 6, wherein,
in step S4, the second rate is controlled at 400.+ -. 20rpm for a period of 1.5.+ -. 0.2S.
8. The method for coating a polyimide resin according to claim 7, wherein,
in step S5, the third speed is controlled at 650+ -30 rpm for 1.5+ -0.2S.
9. The method for coating a polyimide resin according to claim 8, wherein,
in step S6, the fourth speed is controlled toThe time is 1+/-0.1 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311633476.4A CN117619706A (en) | 2023-12-01 | 2023-12-01 | Polyimide resin coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311633476.4A CN117619706A (en) | 2023-12-01 | 2023-12-01 | Polyimide resin coating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117619706A true CN117619706A (en) | 2024-03-01 |
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ID=90035349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311633476.4A Pending CN117619706A (en) | 2023-12-01 | 2023-12-01 | Polyimide resin coating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117619706A (en) |
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2023
- 2023-12-01 CN CN202311633476.4A patent/CN117619706A/en active Pending
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