CN117614395A - Overvoltage regulating circuit of radio frequency power amplifier and communication device - Google Patents

Abstract

The invention discloses an overvoltage regulating circuit of a radio frequency power amplifier and a communication device, wherein the overvoltage regulating circuit is coupled to a bias circuit of the radio frequency power amplifier; the overvoltage regulating circuit comprises a level reference network, a leakage suppression network and a first switch; one end of the level reference network is coupled with a power supply of the radio frequency power amplifier, and the other end of the level reference network is coupled with a control end of the first switch and is used for controlling the first switch to be opened when the overvoltage of the power supply is detected; one end of the leakage suppression network is coupled with the first switch, and the other end of the leakage suppression network is coupled with a bias circuit of the radio frequency power amplifier and is used for generating a compensation signal to adjust the bias circuit when the first switch is opened so as to adjust the working state of the radio frequency power amplifier. The circuit can ensure that the radio frequency power amplifier cannot be permanently burnt out when unstable conditions such as voltage overshoot and voltage fluctuation occur in a power supply, and can adaptively meet the performance requirements of a system.

Description

Overvoltage regulating circuit of radio frequency power amplifier and communication device

Technical Field

The invention relates to the technical field of radio frequency/communication, in particular to an overvoltage regulating circuit of a radio frequency power amplifier.

Background

Radio frequency power amplifiers (RF PAs, radio frequency power amplifier) are one of the key active components of radio frequency/communication systems and circuits, including radio frequency integrated circuits and systems. RF PA is also known as radio frequency power amplifier. The main function of the RF PA is to amplify a low-power radio frequency input signal and then output a higher-power signal to increase the transmission distance and transmission quality of the communication device.

The energy source of the radio frequency power amplifier is generally a Direct Current (DC) source, and the power management system or device generally converts other DC sources (such as lithium batteries) or AC sources to obtain a stable DC power supply to the radio frequency power amplifier VCC. However, under the surge or other special conditions, unstable factors such as voltage overshoot and voltage fluctuation may occur in the DC source of the radio frequency power amplifier, so that the performance of the radio frequency power amplifier fluctuates along with the unstable factors, and even the reliability problems such as permanent burnout of the device may occur.

Disclosure of Invention

The invention aims to overcome the defects of unstable performance of an RF (radio frequency) PA (power amplifier) and damage of the RF PA caused by power supply voltage fluctuation or overshoot in the prior art, and provides a surge protection and overvoltage regulation circuit of a radio frequency power amplifier.

The invention solves the technical problems by the following technical scheme:

the invention provides an overvoltage regulating circuit of a radio frequency power amplifier, which is coupled to a bias circuit of the radio frequency power amplifier; the overvoltage regulating circuit comprises a level reference network, a leakage suppression network and a first switch;

one end of the level reference network is coupled with a power supply of the radio frequency power amplifier, and the other end of the level reference network is coupled with a control end of the first switch and is used for controlling the first switch to be opened when the overvoltage of the power supply is detected;

one end of the leakage suppression network is coupled with the first switch, and the other end of the leakage suppression network is coupled with a bias circuit of the radio frequency power amplifier and is used for generating a compensation signal to adjust the bias circuit when the first switch is opened so as to adjust the working state of the radio frequency power amplifier.

Preferably, the overvoltage regulating circuit further comprises a control regulating network and a second switch;

one end of the control regulating circuit is coupled with a control level, and the other end of the control regulating circuit is coupled with the control end of the second switch; the first switch is connected with the second switch in series;

the control and regulation circuit is used for regulating the working state of the overvoltage regulation circuit by controlling the second switch.

Preferably, the control regulation network comprises a first bias resistor; one end of the first bias resistor is coupled with a control level, and the other end of the first bias resistor is coupled with a control end of the second switch.

Preferably, the control regulating network further comprises at least one diode; the at least one diode is connected in series with the first bias resistor and is used for adjusting the conducting flux of the second switch; and/or the number of the groups of groups,

the control and regulation network also comprises at least one triode; the at least one triode is connected in series with the first bias resistor in the form of a diode and is used for adjusting the flux of the second switch; and/or the number of the groups of groups,

the control and regulation network also comprises at least one MOS (Metal-Oxide-Semiconductor Field-Effect Transistor, field effect transistor); the at least one MOS tube is connected in series with the first bias resistor in a diode mode and is used for adjusting the conducting flux of the second switch.

Preferably, the second switch comprises a second triode; the base electrode of the second triode is coupled with the output end of the control and regulation network, the collector electrode of the second triode is connected with the first switch, and the emitter electrode of the second triode is grounded; and/or the number of the groups of groups,

the second switch comprises a second field effect transistor; the grid electrode of the second field effect tube is coupled with the output end of the control and regulation network, the drain electrode of the second field effect tube is connected with the first switch, and the source electrode of the second field effect tube is grounded; and/or the number of the groups of groups,

the control regulation network further comprises a signal regulator, one end of the signal regulator is coupled with the control end of the second switch, and the other end of the signal regulator is grounded;

the signal adjuster is for adjusting a range of the compensation signal.

Preferably, the level reference network comprises a second bias resistor and at least one diode; the second bias resistor is connected in series with the at least one diode for providing a level reference based on the supply voltage; and/or the number of the groups of groups,

the level reference network comprises a second bias resistor and at least one triode; the at least one triode is connected in series with the second bias resistor in the form of a diode, and is used for providing a level reference according to the power supply voltage; and/or the number of the groups of groups,

the level reference network comprises a second bias resistor and at least one MOS tube; the at least one MOS tube is connected in series with the second bias resistor in the form of a diode, and the at least one MOS tube is used for providing level reference according to the power supply voltage.

Preferably, the leakage suppression network shorts the first switch coupling to the bias circuit; and/or the number of the groups of groups,

the leakage suppression network comprises a diode or a triode in series in the form of a diode to prevent current from flowing back to the bias circuit; and/or the number of the groups of groups,

the level reference network further includes decoupling capacitive devices to reduce interference of potential noise of the power supply; and/or the number of the groups of groups,

the leakage suppression network is also specifically configured to generate a voltage compensation signal to adjust the bias circuit when the first switch is open to adjust the operating state of the radio frequency power amplifier.

Preferably, the first switch comprises a first triode; the base electrode of the first triode is coupled with the output end of the level reference network, the collector electrode of the first triode is coupled with the leakage suppression network, and the emitter electrode of the first triode is grounded through the second switch; and/or the number of the groups of groups,

the first switch comprises a first field effect transistor; the grid electrode of the first field effect tube is coupled with the output end of the level reference network, the drain electrode of the first field effect tube is coupled with the leakage suppression network, and the source electrode of the first field effect tube is grounded through the second switch.

The invention also provides a communication device comprising a radio frequency power amplifier and at least one overvoltage regulating circuit of the radio frequency power amplifier as described above.

Preferably, the communication device comprises a first radio frequency power amplifier, a first overvoltage regulating circuit and a second overvoltage regulating circuit;

the first overvoltage regulating circuit and the second overvoltage regulating circuit are mutually independent and generate compensation signals according to the power supply voltage of the first radio frequency power amplifier to regulate the bias circuit of the first radio frequency power amplifier so as to regulate the working state of the first radio frequency power amplifier.

Preferably, the communication device comprises a second radio frequency power amplifier, a third overvoltage regulating circuit and a fourth overvoltage regulating circuit;

the third overvoltage regulating circuit generates a compensation signal according to the power supply voltage of the second radio frequency power amplifier to regulate the bias circuit of the second radio frequency power amplifier so as to regulate the working state of the second radio frequency power amplifier;

the fourth overvoltage regulating circuit generates a compensation signal according to the power supply voltage of the third radio frequency power amplifier to regulate the bias circuit of the third radio frequency power amplifier so as to regulate the working state of the third radio frequency power amplifier.

The invention has the positive progress effects that:

the overvoltage regulating circuit of the radio frequency power amplifier provided by the invention ensures that the radio frequency power amplifier cannot be permanently burnt out when unstable conditions such as voltage overshoot and voltage fluctuation occur in a power supply, and simultaneously ensures that the radio frequency power amplifier can adaptively meet the performance requirements of a system under the condition of power supply voltage fluctuation.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some examples or embodiments of the present specification, and it is possible for those of ordinary skill in the art to apply the present specification to other similar situations according to the drawings without inventive effort. Unless otherwise apparent from the context of the language or otherwise specified, like reference numerals in the figures refer to like structures or operations.

Fig. 1 is a schematic diagram of a first structure of an overvoltage regulating circuit of a radio frequency power amplifier in embodiment 1 of the present invention.

Fig. 2 is a schematic diagram of a second structure of an overvoltage regulating circuit of the rf power amplifier in embodiment 1 of the present invention.

Fig. 3 is a schematic diagram of a third structure of an overvoltage regulating circuit of the rf power amplifier in embodiment 1 of the present invention.

Fig. 4 is a schematic diagram of the structure of the level reference network in embodiment 1 of the present invention.

Fig. 5 is a schematic structural diagram of a control and regulation network in embodiment 1 of the present invention.

Fig. 6 is a schematic structural diagram of a leakage suppression network in embodiment 1 of the present invention.

Fig. 7 is a schematic diagram of a fourth configuration of an overvoltage regulating circuit of the rf power amplifier in embodiment 1 of the present invention.

Fig. 8 is a schematic diagram of a fifth configuration of an overvoltage regulating circuit of the rf power amplifier in embodiment 1 of the present invention.

Fig. 9 is a schematic diagram showing a sixth configuration of an overvoltage regulating circuit of the rf power amplifier in embodiment 1 of the present invention.

Fig. 10 is a seventh schematic diagram of an overvoltage regulating circuit of the rf power amplifier in embodiment 1 of the present invention.

Fig. 11 is a first structural diagram of the communication device in the present embodiment 2 of the invention.

Fig. 12 is a second structural diagram of the communication device in the present embodiment 2 of the invention.

Fig. 13 is a third configuration diagram of the communication device in the present embodiment 2 of the invention.

Detailed Description

The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

As used herein, the terms "a," "an," "the," and/or "the" are not specific to the singular, but may include the plural, unless the context clearly indicates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus.

The definitions of the first and second, etc. herein are provided herein for the purpose of illustration and distinction of descriptive objects only, without order division, and without implying any particular limitation on the number of devices herein, and without any limitation herein. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure.

Example 1

Fig. 1 is a schematic diagram showing a first structure of an overvoltage regulator circuit of a rf power amplifier according to the present embodiment. Specifically, as shown in fig. 1, the overvoltage regulating circuit is coupled to a bias circuit 6 of the radio frequency power amplifier; the overvoltage regulating circuit comprises a level reference network 1, a leakage suppression network 2 and a first switch 3.

One end of the level reference network 1 is coupled with a power supply VCC of the radio frequency power amplifier, and the other end of the level reference network is coupled with a control end of the first switch 3 and is used for controlling the first switch 3 to be opened when the overvoltage of the power supply is detected; the leakage suppression network 2 has one end coupled to the first switch 3 and the other end coupled to a bias circuit of the radio frequency power amplifier for generating a compensation signal Icomp to adjust the bias circuit when the first switch 3 is opened to adjust the operating state of the radio frequency power amplifier. Specifically, the RF PA is VCC with the DC source used by the level reference circuit.

Fig. 2 is a schematic diagram showing a second structure of an overvoltage regulator circuit of the rf power amplifier according to the present embodiment. Specifically, as shown in fig. 2, the overvoltage regulating circuit further includes a control regulating network 4 and a second switch 5; one end of the control regulating network 4 is coupled with the control level VREG, and the other end is coupled with the control end of the second switch 5; the first switch 3 is connected in series with the second switch 5; the control regulating network 4 is used for regulating the operating state of the overvoltage regulating circuit by controlling the second switch 5. Specifically, the overvoltage regulating circuit in the present embodiment brings the overvoltage regulating circuit into an operation state (VREG is at a high level) through the control network 4 and the second switch 5. At this time, after the surge fluctuation of the VCC voltage of the DC power supply is detected by the level reference network 1, a compensation current Icomp is generated through the first switch 3 and the leakage suppression network 2 and is provided to the bias circuit, so as to adjust the bias of the RF power amplifier, thereby adjusting (or completely closing) the RF PA, and realizing the surge or overvoltage protection of the RF PA on VCC.

Fig. 3 is a schematic diagram showing a third structure of an overvoltage regulator circuit of the rf power amplifier according to the present embodiment. Specifically, as shown in fig. 3, in the present embodiment, the control adjustment network 4 includes a first bias resistor R1; one end of the first bias resistor R1 is coupled to the control level and the other end is coupled to the control end of the second switch 5. One end of the level reference network 1 is coupled with a DC source VCC, and the other end of the level reference network is coupled with the base electrode of the triode device Q1; one end of the control regulation network 4 is coupled with the control level VREG, and the other end is coupled with the base electrode of the triode device Q2; one end of the leakage suppression network 2 is coupled with the collector of the triode device Q1, and the other end is coupled with the bias circuit of the RF PA; the bias circuit is coupled with the control level VREG at one end and the RF PA at one end; the RF PA is VCC with the DC source used by the level reference circuit.

In an alternative embodiment, the level reference network 1 may comprise a second bias resistor R2 and several diodes M1 … Mn; the second bias resistor R2 is connected with a plurality of diodes M1 … Mn in series, and the plurality of diodes M1 … Mn are used for providing level reference according to the power supply voltage; in another alternative embodiment, the level reference network 1 comprises a second bias resistor and at least one transistor; at least one transistor in the form of a diode in series with a second bias resistor, the at least one transistor for providing a level reference based on a supply voltage; in addition, the level reference network 1 may further include a second bias resistor and at least one MOS transistor; at least one MOS transistor is connected in series with a second bias resistor in the form of a diode, the at least one MOS transistor being adapted to provide a level reference in dependence on a supply voltage. Please refer to fig. 4, which is a schematic diagram of a level reference network in the present embodiment. Specifically, as shown in fig. 4, the level reference network may adopt any of the structures b, c, or d in fig. 4. Wherein, alternatively, the resistive device R may be implemented by a linear resistor or a discrete SMD resistor (chip resistor) provided on a radio frequency power amplifier semiconductor process or other processes. Optimally, the resistive device R may be a linear resistor implementation provided by a radio frequency power amplifier semiconductor process. It should be noted that the implementation of the level reference network is not limited to the three forms b, c or d in fig. 4, and those skilled in the art may implement the level reference network using other similar circuit structures under the guidance of the present invention, for example, the R and Dx positions of the b structure in fig. 4 are exchanged, or the R and Qx sequences of the c structure in fig. 4 are exchanged, etc. Such methods are within the scope of the teachings of the present invention.

In an alternative embodiment, the control regulation network 4 comprises a diode N1; a diode N1 is connected in series with the first bias resistor R1 for adjusting the conduction amount of the second switch 5; in another alternative embodiment, the control regulation network 4 further comprises at least one transistor; at least one triode is connected in series with the first bias resistor in the form of a diode and is used for adjusting the conduction quantity of the second switch 5; in addition, the control and regulation network 4 also comprises at least one MOS tube; at least one MOS transistor is connected in series with the first bias resistor in the form of a diode for adjusting the conduction amount of the second switch 5. Please refer to fig. 5, which is a schematic diagram of a control and regulation network in the present embodiment. Specifically, as shown in fig. 5, the control adjustment network may adopt any of the structures b, c, d, or e in fig. 5. Wherein, alternatively, the resistive device R may be implemented by a linear resistor or a discrete SMD resistor provided on a radio frequency power amplifier semiconductor process or other processes. Optimally, the resistive device R may be a linear resistor implementation provided by a radio frequency power amplifier semiconductor process. It should be noted that fig. 5 does not limit the implementation of the control and regulation network to the three forms b, c, d or e, and those skilled in the art can implement the control and regulation network using other similar circuit structures under the guidance of the present invention, and such methods are all within the scope of the guidance of the present invention.

In an alternative embodiment, the leakage suppression network 2 short-circuits the first switch 3 with the bias circuit; in another alternative embodiment, the leakage suppression network 2 may comprise a series diode or a series transistor in the form of a diode to prevent current from flowing back to the bias circuit; please refer to fig. 6, which is a schematic diagram of a leakage suppression network in the present embodiment. Specifically, as shown in fig. 6, the leakage suppression network may take any of the configurations b, c, or d of fig. 6. Wherein, alternatively, the resistive device R may be implemented by a linear resistor or a discrete SMD resistor provided on a radio frequency power amplifier semiconductor process or other processes. Optimally, the resistive device R may be a linear resistor implementation provided by a radio frequency power amplifier semiconductor process. It should be noted that fig. 6 does not limit the implementation of the leakage suppression network to the three forms b, c, or d, and those skilled in the art can implement the control adjustment network using other similar circuit structures under the guidance of the present invention, and such methods are all within the scope of the guidance of the present invention.

In the present embodiment, the first switch 3 includes a first transistor Q1; the base electrode of the first triode Q1 is coupled with the output end of the level reference network 1, the collector electrode of the first triode Q1 is coupled with the leakage suppression network 2, and the emitter electrode of the first triode Q1 is grounded through the second switch 5; the second switch 5 includes a second transistor Q2; the base electrode of the second triode Q2 is coupled with the output end of the control and regulation network 4, the collector electrode of the second triode Q2 is connected with the first switch 3, and the emitter electrode of the second triode Q2 is grounded; in this embodiment, the first transistor Q1 and the second transistor Q2 may be integrated or discrete heterostructure transistors (HBTs) of a radio frequency power amplifier semiconductor process or other process transistors (BJTs), respectively. Optimally, the first triode Q1 and the second triode Q2 can use the same radio frequency power amplifier technology, and the triodes on the same chip are used, so that the effect of the circuit of the invention is improved, and the cost of the circuit of the invention is reduced.

Fig. 7 is a schematic diagram showing a fourth configuration of an overvoltage regulator circuit of the rf power amplifier according to the present embodiment. Specifically, as shown in fig. 7, in another alternative embodiment, the first switch 3 includes a first fet q1; the grid electrode of the first field effect transistor q1 is coupled with the output end of the level reference network 1, the drain electrode of the first field effect transistor q1 is coupled with the leakage suppression network 2, and the source electrode of the first field effect transistor q1 is grounded through the second switch 5; the second switch 5 includes a second field effect transistor q2; the grid electrode of the second field effect transistor q2 is coupled with the output end of the control and regulation network 4, the drain electrode of the second field effect transistor q2 is connected with the first switch 3, and the source electrode of the second field effect transistor q2 is grounded. The active devices used in this embodiment are not limited to triode (HBT/BJT, etc.) devices, but may be field effect transistors, such as CMOS FETs, gallium nitride FETs, etc. Further, the process may also be CMOS, SOI, siGe, or the like. The present embodiment is not limited thereto.

Fig. 8 is a schematic diagram showing a fifth configuration of an overvoltage regulator circuit of the rf power amplifier according to the present embodiment. Specifically, as shown in fig. 8, in an alternative embodiment, the control adjustment network 4 further includes a signal adjuster 41, where one end of the signal adjuster 41 is coupled to the control end of the second switch 5, and the other end is grounded; the signal adjuster 41 is used to adjust the range of the compensation signal. Specifically, a Q4 adjusting device is added on the basis of the above embodiment as an additional part of the control adjusting network of the circuit of the present invention to control the range of Icomp of the circuit of the present invention. Q4 may be a transistor implemented in diode form. Optimally, Q4 can be realized by a triode on the same chip as the radio frequency amplifying devices Q1 and Q2, and the area of the triode can be adjusted, so that the adjustment of the circuit to the conversion VCC achieves the optimal effect.

Fig. 9 is a schematic diagram showing a sixth configuration of an overvoltage regulator circuit of the rf power amplifier according to the present embodiment. Specifically, as shown in fig. 9, the level reference network 1 further includes decoupling capacitive devices to reduce interference of potential noise of the power supply; the present embodiment adds decoupling capacitive devices C1 and C2 on the basis of the above embodiment to increase the interference of the circuit of the present invention to the potential noise, etc., of VCC, etc. The capacitive devices C1 and C2 may be linear or parasitic capacitors provided by radio frequency power amplifier semiconductor processes or other processes, or discrete SMD capacitors. Optimally, C1, C2 may be implemented by capacitive devices on the same chip as the rf amplifying devices Q1, Q2.

Fig. 10 is a schematic diagram showing a seventh configuration of an overvoltage regulator circuit of the rf power amplifier according to the present embodiment. Specifically, as shown in fig. 10, the leakage suppression network 2 is further specifically configured to generate a voltage compensation signal to adjust the bias circuit when the first switch 3 is opened, so as to adjust the operating state of the radio frequency power amplifier. The present embodiment uses the resistor R3 between VREG and the bias circuit on the basis of the above embodiment to convert the compensation current Icomp generated by the circuit of the present invention into a voltage compensation signal, and controls or adjusts the bias current of the RF PA, thereby adjusting or closing the bias current of the RF PA, so as to achieve the purpose of protecting the RF PA, or to achieve the optimal working state according to the conversion of VCC.

The overvoltage regulating circuit of the radio frequency power amplifier provided by the embodiment ensures that the radio frequency power amplifier cannot be permanently burnt out when unstable conditions such as voltage overshoot and voltage fluctuation occur in a power supply, and simultaneously ensures that the radio frequency power amplifier can adaptively meet the performance requirements of a system under the condition of power supply voltage fluctuation.

Example 2

The present embodiment provides a communication device including a radio frequency power amplifier and at least one overvoltage regulating circuit of the radio frequency power amplifier in embodiment 1.

Please refer to fig. 11, which is a first structural diagram of the communication device in the present embodiment. Specifically, as shown in fig. 11, in an alternative embodiment, the communication device includes a first radio frequency power amplifier 201, a first overvoltage regulating circuit 21, and a second overvoltage regulating circuit 22; the first overvoltage regulating circuit 21 and the second overvoltage regulating circuit 22 generate a compensation signal according to the power supply voltage of the first radio frequency power amplifier independently of each other to regulate the bias circuit of the first radio frequency power amplifier 201 to regulate the operating state of the first radio frequency power amplifier.

Specifically, the present embodiment combines the embodiments in example 1. The first overvoltage regulating circuit 21 and the second overvoltage regulating circuit 22 respectively generate two independent compensating currents Icompa and icompeb to regulate the bias of the RF PA in different levels, so as to regulate or close the bias current of the RF PA in a multi-dimensional way, and achieve the purpose of protecting the RF PA or enabling the RF PA to achieve the optimal working state according to the transformation of VCC. The present embodiment can cope with the protection and regulation of RF PA in more complex VCC transformation environments.

In another alternative embodiment, the communication device comprises a second radio frequency power amplifier 202, a third radio frequency power amplifier 203, a third overvoltage regulating circuit 23 and a fourth overvoltage regulating circuit 24; the third overvoltage regulating circuit 23 generates a compensation signal according to the power supply voltage of the second radio frequency power amplifier 202 to regulate the bias circuit of the second radio frequency power amplifier 202 so as to regulate the working state of the second radio frequency power amplifier 202; the fourth overvoltage regulating circuit 24 generates a compensation signal according to the power supply voltage of the third rf power amplifier 203 to regulate the bias circuit of the third rf power amplifier to regulate the operating state of the third rf power amplifier 203.

Please refer to fig. 12, which is a second configuration diagram of the communication device in the present embodiment. Specifically, as shown in fig. 12, the second rf power amplifier 202 may be a driving stage of the rf power amplifier, the third rf power amplifier 203 may be an output stage of the rf power amplifier, the driving stage and the output stage are coupled in series, the third overvoltage adjustment circuit 23 protects or adjusts a power supply surge or an overvoltage of the driving stage of the rf power amplifier, and the fourth overvoltage adjustment circuit 24 protects or adjusts a power supply surge or an overvoltage of the output stage of the amplifier, thereby protecting or adjusting a power supply surge or an overvoltage of the entire amplifier. It should be noted that the radio frequency power amplifier in the present embodiment is not limited to two stages: three or other stages are also possible.

Please refer to fig. 13, which is a third configuration diagram of the communication device in the present embodiment. Specifically, as shown in fig. 13, the second rf power amplifier 202 may be a driving stage of an rf power amplifier, the third rf power amplifier 203 may be an output stage of an rf power amplifier, the driving stage and the output stage are coupled in parallel, the third overvoltage adjustment circuit 23 protects or adjusts a power supply surge or an overvoltage of the driving stage of the rf power amplifier, and the fourth overvoltage adjustment circuit 24 protects or adjusts a power supply surge or an overvoltage of the output stage of the amplifier, thereby protecting or adjusting a power supply surge or an overvoltage of the entire amplifier. It should be noted that the radio frequency power amplifier in the present embodiment is not limited to two stages: three or other stages are also possible.

While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the principles and spirit of the invention, but such changes and modifications fall within the scope of the invention.

Claims (11)

1. An overvoltage crowbar for a radio frequency power amplifier, wherein the overvoltage crowbar is coupled to a bias circuit of the radio frequency power amplifier; the overvoltage regulating circuit comprises a level reference network, a leakage suppression network and a first switch;

one end of the level reference network is coupled with a power supply of the radio frequency power amplifier, and the other end of the level reference network is coupled with a control end of the first switch and is used for controlling the first switch to be opened when the overvoltage of the power supply is detected;

one end of the leakage suppression network is coupled with the first switch, and the other end of the leakage suppression network is coupled with a bias circuit of the radio frequency power amplifier and is used for generating a compensation signal to adjust the bias circuit when the first switch is opened so as to adjust the working state of the radio frequency power amplifier.

2. The overvoltage protection circuit of claim 1, further comprising a control regulation network and a second switch;

one end of the control regulating circuit is coupled with a control level, and the other end of the control regulating circuit is coupled with the control end of the second switch; the first switch is connected with the second switch in series;

the control and regulation circuit is used for regulating the working state of the overvoltage regulation circuit by controlling the second switch.

3. The overvoltage regulation circuit of claim 2 wherein the control regulation network includes a first bias resistor; one end of the first bias resistor is coupled with a control level, and the other end of the first bias resistor is coupled with a control end of the second switch.

4. The overvoltage protection circuit of claim 3, wherein the control regulation network further comprises at least one diode; the at least one diode is connected in series with the first bias resistor and is used for adjusting the conducting flux of the second switch; and/or the number of the groups of groups,

the control and regulation network also comprises at least one triode; the at least one triode is connected in series with the first bias resistor in the form of a diode and is used for adjusting the flux of the second switch; and/or the number of the groups of groups,

the control and regulation network also comprises at least one MOS tube; the at least one MOS tube is connected in series with the first bias resistor in a diode mode and is used for adjusting the conducting flux of the second switch.

5. The overvoltage protection circuit of claim 2, wherein the second switch includes a second transistor; the base electrode of the second triode is coupled with the output end of the control and regulation network, the collector electrode of the second triode is connected with the first switch, and the emitter electrode of the second triode is grounded; and/or the number of the groups of groups,

the second switch comprises a second field effect transistor; the grid electrode of the second field effect transistor is coupled with the output end of the control and regulation network, the drain electrode of the second field effect transistor is connected with the first switch, and the source electrode of the second triode is grounded; and/or the number of the groups of groups,

the control regulation network further comprises a signal regulator, one end of the signal regulator is coupled with the control end of the second switch, and the other end of the signal regulator is grounded;

the signal adjuster is for adjusting a range of the compensation signal.

6. The overvoltage regulation circuit of claim 1 wherein the level reference network includes a second bias resistor and at least one diode; the second bias resistor is connected in series with the at least one diode for providing a level reference based on the supply voltage; and/or the number of the groups of groups,

the level reference network comprises a second bias resistor and at least one triode; the at least one triode is connected in series with the second bias resistor in the form of a diode, and is used for providing a level reference according to the power supply voltage; and/or the number of the groups of groups,

the level reference network comprises a second bias resistor and at least one MOS tube; the at least one MOS tube is connected in series with the second bias resistor in the form of a diode, and the at least one MOS tube is used for providing level reference according to the power supply voltage.

7. The overvoltage crowbar of claim 1, wherein the leakage suppression network shorts the first switch coupling to the bias circuit; and/or the number of the groups of groups,

the leakage suppression network comprises a diode or a triode in series in the form of a diode to prevent current from flowing back to the bias circuit; and/or the number of the groups of groups,

the level reference network further includes decoupling capacitive devices to reduce interference of potential noise of the power supply; and/or the number of the groups of groups,

the leakage suppression network is also specifically configured to generate a voltage compensation signal to adjust the bias circuit when the first switch is open to adjust the operating state of the radio frequency power amplifier.

8. The overvoltage protection circuit of claim 5, wherein the first switch includes a first transistor; the base electrode of the first triode is coupled with the output end of the level reference network, the collector electrode of the first triode is coupled with the leakage suppression network, and the emitter electrode of the first triode is grounded through the second switch; and/or the number of the groups of groups,

the first switch comprises a first field effect transistor; the grid electrode of the first field effect tube is coupled with the output end of the level reference network, the drain electrode of the first field effect tube is coupled with the leakage suppression network, and the source electrode of the first field effect tube is grounded through the second switch.

9. A communication device comprising at least one radio frequency power amplifier and at least one overvoltage regulating circuit of the radio frequency power amplifier according to any one of claims 1-8.

10. The communication device of claim 9, wherein the communication device comprises a first radio frequency power amplifier, a first overvoltage regulation circuit, and a second overvoltage regulation circuit;

the first overvoltage regulating circuit and the second overvoltage regulating circuit are mutually independent and generate compensation signals according to the power supply voltage of the first radio frequency power amplifier to regulate the bias circuit of the first radio frequency power amplifier so as to regulate the working state of the first radio frequency power amplifier.

11. The communication device of claim 9, wherein the communication device comprises a second radio frequency power amplifier, a third overvoltage regulation circuit, and a fourth overvoltage regulation circuit;

the third overvoltage regulating circuit generates a compensation signal according to the power supply voltage of the second radio frequency power amplifier to regulate the bias circuit of the second radio frequency power amplifier so as to regulate the working state of the second radio frequency power amplifier;

the fourth overvoltage regulating circuit generates a compensation signal according to the power supply voltage of the third radio frequency power amplifier to regulate the bias circuit of the third radio frequency power amplifier so as to regulate the working state of the third radio frequency power amplifier.