CN117597762A - 带电粒子检测器 - Google Patents

带电粒子检测器 Download PDF

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Publication number
CN117597762A
CN117597762A CN202280047586.XA CN202280047586A CN117597762A CN 117597762 A CN117597762 A CN 117597762A CN 202280047586 A CN202280047586 A CN 202280047586A CN 117597762 A CN117597762 A CN 117597762A
Authority
CN
China
Prior art keywords
detector
array
sample
particles
backscatter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280047586.XA
Other languages
English (en)
Chinese (zh)
Inventor
A·V·G·曼格努斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of CN117597762A publication Critical patent/CN117597762A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2441Semiconductor detectors, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2446Position sensitive detectors
    • H01J2237/24465Sectored detectors, e.g. quadrants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24475Scattered electron detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2448Secondary particle detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31774Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN202280047586.XA 2021-07-05 2022-06-28 带电粒子检测器 Pending CN117597762A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21183804.0 2021-07-05
EP21183804.0A EP4117016A1 (fr) 2021-07-05 2021-07-05 Détecteur de particules chargées
PCT/EP2022/067786 WO2023280642A1 (fr) 2021-07-05 2022-06-28 Détecteur de particules chargées

Publications (1)

Publication Number Publication Date
CN117597762A true CN117597762A (zh) 2024-02-23

Family

ID=76807513

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280047586.XA Pending CN117597762A (zh) 2021-07-05 2022-06-28 带电粒子检测器

Country Status (4)

Country Link
EP (1) EP4117016A1 (fr)
CN (1) CN117597762A (fr)
IL (1) IL309285A (fr)
WO (1) WO2023280642A1 (fr)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897545A (en) * 1987-05-21 1990-01-30 Electroscan Corporation Electron detector for use in a gaseous environment
US7129502B2 (en) 2003-03-10 2006-10-31 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
TWI497557B (zh) 2009-04-29 2015-08-21 Mapper Lithography Ip Bv 包含靜電偏轉器的帶電粒子光學系統
NL1036912C2 (en) 2009-04-29 2010-11-01 Mapper Lithography Ip Bv Charged particle optical system comprising an electrostatic deflector.
WO2011089955A1 (fr) * 2010-01-20 2011-07-28 株式会社日立ハイテクノロジーズ Appareil à faisceau de particules chargées
NL2007604C2 (en) 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
EP3201939B1 (fr) * 2014-10-02 2021-03-03 908 Devices Inc. Spectrométrie de masse par détection des particules chargées positivement et négativement
US10504687B2 (en) 2018-02-20 2019-12-10 Technische Universiteit Delft Signal separator for a multi-beam charged particle inspection apparatus
US10395887B1 (en) 2018-02-20 2019-08-27 Technische Universiteit Delft Apparatus and method for inspecting a surface of a sample, using a multi-beam charged particle column
US10748739B2 (en) 2018-10-12 2020-08-18 Kla-Tencor Corporation Deflection array apparatus for multi-electron beam system
US10978270B2 (en) 2018-12-19 2021-04-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, interchangeable multi-aperture arrangement for a charged particle beam device, and method for operating a charged particle beam device

Also Published As

Publication number Publication date
IL309285A (en) 2024-02-01
WO2023280642A1 (fr) 2023-01-12
TW202318466A (zh) 2023-05-01
EP4117016A1 (fr) 2023-01-11

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