CN117594718A - Flip-chip light emitting diode and light emitting device - Google Patents
Flip-chip light emitting diode and light emitting device Download PDFInfo
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- CN117594718A CN117594718A CN202311226487.0A CN202311226487A CN117594718A CN 117594718 A CN117594718 A CN 117594718A CN 202311226487 A CN202311226487 A CN 202311226487A CN 117594718 A CN117594718 A CN 117594718A
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- 238000000407 epitaxy Methods 0.000 claims description 6
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- 239000010980 sapphire Substances 0.000 description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
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- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
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- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
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- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode, which comprises a transparent substrate, a transparent bonding layer and a semiconductor epitaxial lamination; the transparent bonding layer is positioned between the transparent substrate and the semiconductor epitaxial lamination; the semiconductor epitaxial stack includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; the transparent bonding layer is silicon-based multi-element oxide. By the optimized arrangement of the materials of the transparent bonding layer, the bonding yield and the luminous efficiency of the flip LED can be improved.
Description
Technical Field
The invention relates to a light-emitting diode, belonging to the technical field of semiconductor optoelectronic devices.
Background
The flip LED is an effective technical means for further improving the luminous efficiency of the LED due to the advantages of no wire bonding, no electrode shading, excellent heat dissipation and the like. At present, aluminum gallium indium phosphorus (AlGaInP) quaternary materials for manufacturing high-power high-brightness red light and yellow light LEDs mainly adopt light-absorbing GaAs materials as growth substrates, and the light is required to be transferred to a transparent substrate through a bonding process to improve external quantum efficiency in order to manufacture a high-brightness flip-chip LED chip.
The conventional bonding process generally uses oxide as a transparent bonding layer to bond the semiconductor epitaxial stack layer and the transparent substrate together, so as to realize light emitting on the back surface of the chip. As the oxide of the transparent bonding layer, a material having a low refractive index, such as SiO, is usually selected 2 And Al 2 O 3 The refractive index of the semiconductor epitaxial lamination material is higher, and when light emitted by the active layer of the light-emitting diode passes through the interface of the semiconductor epitaxial lamination and the transparent bonding layer, total reflection is easy to occur, so that the light extraction is not facilitated, and the light-emitting efficiency of the light-emitting diode is reduced.
Disclosure of Invention
The invention aims to provide a flip LED and a light-emitting device thereof, which ensure bonding quality and improve light extraction efficiency of the flip LED through the optimal design of a transparent bonding layer.
According to a first aspect of the present invention, a flip-chip light emitting diode is provided, the flip-chip light emitting diode comprising a transparent substrate; a transparent bonding layer and a semiconductor epitaxial stack; the transparent bonding layer is positioned between the transparent substrate and the semiconductor epitaxial lamination; the semiconductor epitaxial stack includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; the transparent bonding layer is silicon-based multi-element oxide.
In some alternative embodiments, the silicon-based multi-oxide is SiOxNy or SiOxTiy or SiOxTay.
In some alternative embodiments, the oxygen content of the silicon-based multi-oxide is gradually reduced or gradually increased from the direction of the semiconductor epitaxial stack to the transparent substrate.
In some alternative embodiments, the silicon-based multi-oxides are formed by chemical vapor deposition or by vapor deposition.
In some alternative embodiments, the refractive index of the transparent bonding layer is n1, and the refractive index of silicon dioxide is n SiO2 The refractive index of the semiconductor epitaxial lamination is n Epitaxy(s) ，n sio2 ＜n1＜n Epitaxy(s) 。
In some alternative embodiments, n1 ranges from 1.6 to 3.0.
In some alternative embodiments, the transparent bonding layer is a single layer or a multi-layer structure.
In some alternative embodiments, the refractive index of the transparent bonding layer gradually decreases or gradually increases from the semiconductor epitaxial stack to the transparent substrate.
In some alternative embodiments, the transparent bonding layer has a thickness of 0.5 to 5 μm.
In some alternative embodiments, the semiconductor epitaxial stack has a first surface facing the transparent substrate; the first surface of the semiconductor lamination has an uneven structure.
In some alternative embodiments, the height of the uneven structure on the first surface of the first semiconductor stack is 0.1-1 μm.
In some alternative embodiments, the transparent substrate has a first surface facing the stack of semiconductor layers, the first surface of the transparent substrate having an uneven structure.
In some alternative embodiments, the height of the uneven structure of the first surface of the transparent substrate is 0.1-3 microns.
In some alternative embodiments, the light emitting diode further includes first and second contact electrodes that form electrical connections with the first and second conductivity type semiconductor layers, respectively.
In some alternative embodiments, the light emitting diode further includes first and second pad electrodes that form an electrical connection with the first and second contact electrodes.
In some alternative embodiments, an insulating layer having a first opening and a second opening is further included, the first and second pad electrodes being electrically connected to the first and second contact electrodes through the first and second openings.
In some alternative embodiments, the light emitting diode radiates light having a wavelength of 550-950 nm.
The invention also provides a light-emitting device, which is characterized in that: the light emitting device comprises the flip-chip light emitting diode.
The invention uses silicon-based multi-element oxide to increase the refractive index of the transparent bonding layer, and improves the light extraction efficiency of the flip LED while ensuring the bonding quality.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
While the invention will be described in conjunction with certain exemplary embodiments and methods of use, those skilled in the art will recognize that they are not intended to limit the invention to these embodiments. On the contrary, the intent is to cover all alternatives, modifications and equivalents as included within the spirit and scope of the invention as defined by the appended claims.
Drawings
For a clearer description of embodiments of the invention or of the solutions of the prior art, the drawings that are needed in the description of the embodiments or of the prior art will be briefly described, it being obvious that the drawings in the description below are some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art; the positional relationships described in the drawings in the following description are based on the orientation of the elements shown in the drawings unless otherwise specified.
Fig. 1 is a schematic cross-sectional view of a light emitting diode according to embodiment 1 of the present invention.
Fig. 2 to 6 are schematic structural views of the light emitting diode according to embodiment 2 of the present invention during the manufacturing process.
Fig. 7 is a schematic cross-sectional view of a light emitting diode according to embodiment 3 of the present invention.
Fig. 8 is a schematic structural view of the light emitting device mentioned in embodiment 4 of the present invention.
The reference numerals of the elements in the drawings illustrate: 10: a growth substrate; 100: a transparent substrate; 101: a bonding layer; 102: a first conductive type semiconductor layer; 103: an active layer; 104: a second conductivity type semiconductor layer; 105: a first contact electrode; s1: a first mesa; 106: a second contact electrode; 107: an insulating layer; 108: a first pad electrode; 109: a second pad electrode; 201 a metal connection layer; 200: and (5) fixing the crystal substrate.
Description of the embodiments
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
The following will describe embodiments of the present invention in detail with reference to the drawings and examples, thereby solving the technical problems by applying technical means to the present invention, and realizing the technical effects can be fully understood and implemented accordingly.
Example 1
Fig. 1 is a schematic cross-sectional view of a light emitting diode chip according to an embodiment of the invention.
Referring to fig. 1, to achieve at least one of the advantages and other advantages of the present invention, one embodiment of the present invention provides a flip-chip light emitting diode chip, which includes the following stacked layers: 100: a transparent substrate; 101: a bonding layer; 102: a first conductive type semiconductor layer; 103: an active layer; 104: a second conductivity type semiconductor layer; 105: a first contact electrode; 106: a second contact electrode; 107: an insulating layer; 108: a first pad electrode; 109: and a second pad electrode.
The light emitting diode chip may be a conventional sized light emitting diode chip. The light emitting diode chip may have a thickness of about 90000 μm 2 Above and about 2000000 μm 2 The following horizontal sectional areas.
The light emitting diode chip may also be a small-sized or micro-sized light emitting diode chip. The light emitting diode chip may have a thickness of about 90000 μm 2 The following horizontal sectional areas. For example, the light emitting diode chip may have a length and/or a width of 100 μm or more and 300 μm or less, and further may have a thickness of 40 μm or more and 100 μm or less.
The light emitting diode chip may also be a miniature light emitting diode chip of smaller size. The light emitting diode chip may have a thickness of about 10000 μm 2 The following light emitting diode chips of horizontal cross-sectional area. For example, the light emitting diode chip may have a length and/or width of 2 μm or more and 100 μm or less, and further may have a thickness of 2 μm or more and 100 μm or less. The light emitting diode chip of the present embodiment may have the horizontal sectional area and thickness as described above, and thus the light emitting diode chip may be easily applied to various electronic devices requiring a small and/or micro light emitting device.
Referring again to fig. 1, the semiconductor epitaxial stack has a first surface and a second surface opposite the first surface. The first semiconductor epitaxial lamination is obtained by MOCVD or other growth modes, and is a semiconductor material capable of providing conventional radiation such as ultraviolet, blue, green, yellow, red, infrared light and the like, specifically can be 200-950 nm material such as common nitride, specifically is gallium nitride-based semiconductor epitaxial lamination, and the gallium nitride-based epitaxial lamination is commonly doped with elements such as aluminum, indium and the like and mainly provides radiation with a wave band of 200-550 nm; or a common AlGaInP-based or AlGaAs-based semiconductor epitaxial stack layer, mainly providing radiation with a wave band of 550-950 nm. In this embodiment, the semiconductor epitaxial layer is preferably made of aluminum gallium indium phosphorus or aluminum gallium arsenic base material, and the semiconductor epitaxial layer mainly provides radiation with a wavelength band of 550-950 nm.
The semiconductor epitaxial stack includes a first conductive type semiconductor layer 102, a second conductive type semiconductor layer 104, and an active layer 103 between the first conductive type semiconductor layer 102 and the second conductive type semiconductor layer 104; the semiconductor epitaxial stack has a first mesa S1, which first mesa S1 exposes the first conductivity type semiconductor layer 102.
The first conductive type semiconductor layer 102 and the second conductive type semiconductor layer 104 have different conductive types, electrical properties, polarities, or doping elements to provide electrons or holes, that is: the first conductive type semiconductor layer 102 has a first conductivity, the second conductive type semiconductor layer 104 has a second conductivity, wherein the first conductivity is different from the second conductivity, for example, the first conductive type semiconductor layer 102 may be a p-type semiconductor layer, and the second conductive type semiconductor layer 104 may be an n-type semiconductor layer; and vice versa. Electrons from the n-type semiconductor layer and holes from the p-type semiconductor layer are driven by an applied current, and electric energy is converted into light energy in the active layer 103 and light is emitted.
In this embodiment, the semiconductor epitaxial stack is a material of gallium arsenide (GaAs) series, in which the doping of the first conductivity type semiconductor layer 102 is p-type and the doping of the second conductivity type semiconductor layer 104 is n-type.
In other embodiments of the disclosure, the material of the first conductive type semiconductor layer 102 includes a group-material (e.g., zinc selenide (ZnSe)) or a group-nitride material (e.g., gallium arsenide (GaAs), gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or aluminum indium gallium nitride (AlInGaN)), and the material of the first conductive type semiconductor layer 102 may further include dopants that may include magnesium (Mg), carbon (C), etc., but the disclosure is not limited thereto. In some other embodiments, the first conductive type semiconductor layer 102 may also be a single-layer or multi-layer structure.
In other embodiments of the disclosure, the material of the second conductive type semiconductor layer 104 includes a nitrogen-group compound material (e.g., gallium arsenide (GaAs), gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or aluminum indium gallium nitride (AlInGaN)), and the material of the second conductive type semiconductor layer 104 may include a dopant such as silicon (Si) or germanium (Ge), but the disclosure is not limited thereto. In some other embodiments, the second conductive type semiconductor layer 104 may also be a single-layer or multi-layer structure.
In this embodiment, the active layer 103 is made of a semiconductor material of gallium arsenide (GaAs) series. Specifically, when the active layer 103 is based on a semiconductor material of aluminum indium gallium phosphide (AlGaInP) series, gallium arsenide (GaAs) series, red light, orange light, or yellow light can be emitted; blue or green light may be emitted when based on semiconductor materials of the aluminum gallium indium nitride (AlGaInN) series. In some embodiments of the present invention, the active layer 103 may be a Single Heterostructure (SH), a double-sided Double Heterostructure (DH), or a multi-quantum well (MQW), but the embodiments of the present disclosure are not limited thereto.
Referring to fig. 1 again, the semiconductor epitaxial stack is bonded to the transparent substrate 100 through the bonding layer 101, and preferably, a side of the semiconductor epitaxial stack facing the substrate 100 is formed as a rough surface to reduce the number of reflections during light output and improve the brightness of the light emitting diode. In this embodiment, the transparent substrate 100 is a sapphire substrate. The material of the transparent substrate 100 includes an inorganic material or a group semiconductor material. The inorganic material comprises silicon carbide (SiC), germanium (Ge), sapphire (sapphire), lithium aluminate (LiAlO) 2 ) Zinc oxide (ZnO), glass or quartz. The group-semiconductor material comprises indium phosphide (InP), gallium phosphide (GaP), gallium nitride (GaN), aluminum nitride (AlN) materials. The transparent substrate 100 has strength sufficient to mechanically support the semiconductor epitaxial stack and is capable of transmitting light emitted from the semiconductor epitaxial stack. The thickness of the transparent substrate 100 is preferably 50 μm or more. In addition, to facilitate the bonding of the transparent substrate 100 after bonding to the semiconductor epitaxial layer stackThe machining is preferably a thickness of not more than 300 μm.
It should be noted that the led chip of the present invention is not limited to include only one semiconductor epitaxial layer stack, but may include a plurality of semiconductor epitaxial layers on the transparent substrate 100, wherein a conductive line structure may be disposed between the plurality of semiconductor epitaxial layers to electrically connect the plurality of semiconductor epitaxial layers to each other on the transparent substrate 100 in series, parallel, serial-parallel, etc.
The conventional bonding process generally uses oxide as a transparent bonding layer to bond the semiconductor epitaxial stack layer and the transparent substrate together, so as to realize light emitting on the back surface of the chip. As the oxide of the transparent bonding layer, a material having a low refractive index, such as SiO, is usually selected 2 And Al 2 O 3 The refractive index of the semiconductor epitaxial lamination material is higher, and when light emitted by the active layer of the light-emitting diode passes through the interface of the semiconductor epitaxial lamination and the transparent bonding layer, total reflection is easy to occur, so that the light extraction is not facilitated, and the light-emitting efficiency of the light-emitting diode is reduced. The material of the transparent bonding layer 101 in this embodiment is preferably a silicon-based multi-element oxide, such as SiO x N y Or SiO x Ti y Or SiOxTay, but not limited thereto. The oxygen content of the transparent bonding layer 101 gradually increases or decreases from the semiconductor epitaxial stack to the transparent substrate. The transparent bonding layer 101 may have a single-layer or multi-layer structure, and the thickness of the transparent bonding layer 101 is 0.5 to 5 μm, preferably 1 μm or 1.5 μm or more and 4 μm or less.
The transparent bonding layer is silicon-based multi-element oxide, and the refractive index of the transparent bonding layer can be regulated and controlled by changing the oxygen content of the transparent bonding layer. In some alternative embodiments, the refractive index of the transparent bonding layer increases gradually from the semiconductor epitaxial stack to the substrate. In some alternative embodiments, the refractive index of the transparent bonding layer decreases gradually from the semiconductor epitaxial stack to the substrate. The reflection reducing film or the reflection increasing film can be realized by adjusting the refractive index of the transparent bonding layer, so that the application of the light emitting diode in different occasions can be realized.
The oxygen content x of the silicon-based multi-element oxide in the transparent bonding layer 101 is more than 0, so as to ensure that enough hydrogen-oxygen bonds can be formed on the surface of the transparent bonding layer 101, namely the silicon-based multi-element oxide in the bonding process, thereby being beneficial to pre-bonding and laminating and improving the bonding yield. The silicon-based multi-oxide in the transparent bonding layer 101 can be formed into a film by chemical vapor deposition or by evaporation coating.
In some embodiments, the refractive index of the transparent bonding layer 101 is preferably between the refractive indices of the semiconductor epitaxial stack and the transparent substrate 100. More preferably, the refractive index of the transparent bonding layer 101 is between that of the silicon oxide and the transparent substrate 100. For example, silicon oxide has a refractive index n SiO2 The bonding layer 100 has a refractive index n1, and the substrate 100 has a refractive index n Epitaxy(s) Wherein n is sio2 ＜n1＜n Epitaxy(s) . In some embodiments, the refractive index of the bonding layer 100 ranges from 1.6 to 3.
In order to dispose the first contact electrode 106 and the second contact electrode 107 described later on the same surface side of the first conductive type semiconductor layer 102 and the second conductive type semiconductor layer 104, the second conductive type semiconductor layer 104 may be laminated on the first conductive type semiconductor layer 102 so that a part of the first conductive type semiconductor layer 102 is exposed, or the first conductive type semiconductor layer 102 may be laminated on the second conductive type semiconductor layer 104 so that a part of the second conductive type semiconductor layer 104 is exposed. For example, referring to fig. 1 again, in the present embodiment, the semiconductor epitaxial stack includes a first mesa S1 at least partially penetrating the second conductivity type semiconductor layer 104 and the active layer 103 to expose the first conductivity type semiconductor layer 102.
The light emitting diode chip includes one or more first contact electrodes 105 on the first conductive type semiconductor layer 102 and directly or indirectly electrically connected to the first conductive type semiconductor layer 102, and one or more second contact electrodes 106 on the second conductive type semiconductor layer 104 and directly or indirectly electrically connected to the second conductive type semiconductor layer 104. In the case where the first conductivity type semiconductor layer 102 is p-type, the first contact electrode 105 refers to a p-side contact electrode; in the case where the first conductivity type semiconductor layer 102 is n-type, the first contact electrode 105 refers to an n-side contact electrode. And the second contact electrode 106 is opposite to the first contact electrode 105. In this embodiment, the first contact electrode 105 is preferably a p-side contact electrode.
The first contact electrode 105 and the second contact electrode 106 may be metal electrodes, and the second contact electrode 106 is composed of at least three elements of Au, ge, ni, and alloys thereof. In some embodiments, the second contact electrode 106 further comprises Ti and Pt. Specifically, the first contact electrode 105 is preferably a stack of an alloy of Au, zn, or Be, or any combination thereof, and the second contact electrode 106 is preferably a stack of an alloy of Au, ge, or Ni, or any combination thereof. The thickness of the first contact electrode 105 and the second contact electrode 106 is 0.5 to 3 μm, preferably 1 μm or more, to ensure that the first contact electrode 105 and the second contact electrode 106 form good ohmic contact with the semiconductor epitaxial stack.
The insulating layer 107 covers the upper surface and the side surfaces of the semiconductor epitaxial stack and covers the first contact electrode 105 and the second contact electrode 106, and the insulating layer 107 may be formed so as to extend over the upper surface of the substrate 100 partially exposed at the periphery of the semiconductor epitaxial stack. Thus, the insulating layer 107 can be in contact with the upper surface of the substrate 100, and thus can cover the side surface of the semiconductor epitaxial stack more stably. The insulating layer 107 is used to protect the semiconductor epitaxial stack from moisture or contaminants, and ensure the optical and electrical properties of the semiconductor epitaxial stack. The insulating layer can be a single-layer or multi-layer structure, and the insulating layer can be SiO 2 、SiN x 、Al 2 O 3 And the like.
The insulating layer has a first opening and a second opening, and a first pad electrode 108 and a second pad electrode 109 are disposed on an upper portion of the insulating layer 107. The first pad electrode 108 may be electrically connected to the first contact electrode 105 through the first opening of the insulating layer 107. The second pad electrode 109 may be electrically connected to the second contact electrode 106 through the second opening. The first opening and the second opening may have a circular shape, and in some other embodiments, the first opening and the second opening may have a square shape, or the like, and the shape and the number of each opening are not particularly limited, and only one opening may be provided, and if a plurality of openings are provided, the current may be more uniformly dispersed. In addition, in some other embodiments, in the case where a plurality of openings are provided, each opening may be distributed at equal intervals or non-equal intervals according to actual needs, which is not limited to the embodiments disclosed in the present disclosure. In some embodiments, the first pad electrode 108 includes a stack of Ti, al, pt, au, ni, sn or an alloy of any combination thereof or any combination thereof. In some embodiments, the second pad electrode 109 includes a stack of Ti, al, pt, au, ni, sn or an alloy of any combination thereof or any combination thereof. The thickness of the first pad electrode 108 and the second pad electrode 109 is 1 to 5 μm, preferably 3 to 4 μm.
The invention ensures the bonding quality and improves the light extraction efficiency of the flip LED through the optimized design of the transparent bonding layer.
Example 2
The process for manufacturing the light emitting diode of the above embodiment 1 will be described in detail.
Referring to fig. 2, a semiconductor epitaxial stack is formed on a growth substrate 10, and may be grown by various methods known in the art, such as organometallic chemical vapor deposition (Metal Organic Chemical VaporDeposition, MOCVD), molecular beam epitaxy (Molecular Beam Epitaxy, MBE) or hydride vapor phase epitaxy (Hydride Vapor Phase Epitaxy, HVPE). The growth substrate 10 is a gallium arsenide substrate. The semiconductor epitaxial stack is a material of gallium arsenate (GaAs) series, and includes a first conductivity type semiconductor layer 102, a second conductivity type semiconductor layer 104, and an active layer 103 between the first conductivity type semiconductor layer 102 and the second conductivity type semiconductor layer 104.
Referring to fig. 3, the roughened surface is formed on the surface of the first conductive type semiconductor layer 102 by roughening treatment, and the method for forming the roughened surface is not particularly limited, and for example, etching or mechanical polishing may be used. And depositing a bonding layer 101 on the roughened surface of the first conductive type semiconductor layer 102, and polishing the surface of the bonding layer 101.
Referring to fig. 4, a semiconductor epitaxial stacked layer is bonded to a transparent substrate 100 through a bonding layer 101, wherein the transparent substrate 100 is a sapphire substrate; the growth substrate 10 is then removed.
Referring to fig. 5, defining a photoresist pattern on the surface of the semiconductor epitaxial stacked layer, removing the second conductive type semiconductor layer 104 and the active layer 103 in a partial area of the surface of the composite ohmic contact layer 105 until a part of the first conductive type semiconductor layer 102 is exposed, forming a first mesa S1, and then forming a first contact electrode 105 and a second contact electrode 106 on the first mesa and the second conductive type semiconductor layer; referring to fig. 6, an insulating layer 107 is deposited, and the insulating layer 108 completely covers the surface of the semiconductor epitaxial stack, the sidewalls of the semiconductor epitaxial stack, and the exposed surface of the bonding layer 101.
Then, a first opening and a second opening are formed in the insulating layer 107 over the first conductive type semiconductor layer 102 and the second conductive type semiconductor layer 104, respectively, the first pad electrode 108 and the second pad electrode 109 are prepared and electrically connected to the first conductive type semiconductor layer 102 and the second conductive type semiconductor layer 104 through the corresponding first opening and second opening, respectively, to obtain the light emitting diode shown in fig. 1.
The invention ensures the bonding quality and improves the light extraction efficiency of the flip LED through the optimized design of the transparent bonding layer.
Example 3
As a modified embodiment of example 1, as shown in fig. 7, the first surface of the transparent substrate 100 in this example has an uneven structure. By using the design of the uneven structure of the transparent substrate 100, the direction change can be realized when light is emitted to the interface between the transparent bonding layer 101 and the transparent substrate 100, and the probability of emitting from the side wall of the transparent substrate is increased, so that the light output efficiency is increased, and the brightness is improved.
Alternatively, the uneven structure on the upper surface of the transparent substrate 100 may be a regular shape, such as a taper, a taper table, a column, or a random irregular shape, such as a random roughened structure.
More preferably, the transparent substrate 100 is sapphire, which has high hardness and strong chemical stability, but has high etching difficulty, so that the uneven structure on the sapphire substrate can be obtained by using the photoresist pattern to assist dry etching or wet etching, and the uneven structure can be defined to have a regular shape with uniform morphology, including uniform height, width, shape and spacing.
The uneven structure of the first surface of the transparent substrate 100 may be in a shape of a taper or a taper stage. When the sidewall of the transparent substrate 100 is inclined with respect to the horizontal direction, which is perpendicular to the stacking direction of the layers, it is more advantageous to change the direction of light.
Preferably, the thickness of the transparent substrate 100 may be 40 to 150 μm; such as 60 to 100 microns.
Preferably, the height H1 of the uneven structure of the first surface of the transparent substrate 100 is 0.1 to 3 micrometers, for example 0.5 to 2.5 micrometers, for example 1.5 to 2.5 micrometers; the spacing between adjacent patterns is 0.1 to 3 microns, such as 2 to 3 microns; the width of the bottom is 0.1 to 4 microns, for example 1 to 3 microns. Better, the thicker thickness of the sapphire graph is utilized, and a graph structure with larger size can be realized, so that the direction of light can be changed obviously, the light can be output from the side wall of the transparent substrate, and the light output efficiency is improved.
Preferably, the uneven structure of the first surface of the transparent substrate 100 is preferably in a shape of a pointed cone, and the shape of the sidewall is arc-shaped or polyhedral.
The second surface of the transparent substrate 100 is rectangular or square in shape as viewed from one side of the transparent substrate 100.
The thickness T1 of the transparent bonding layer 101 exceeds the height H1 of the uneven structure of the first surface of the transparent substrate 100; preferably, the thickness T1 of the transparent bonding layer 101 may be 1 to 4 micrometers, wherein the thickness T1 of the transparent bonding layer 101 refers to the maximum thickness of the transparent bonding layer 101.
Example 4
The present embodiment provides a light emitting device, as shown in fig. 8, which includes a die attach substrate 200 and a light emitting diode on the die attach substrate 200. The light emitting diode may be a flip-chip light emitting diode provided in embodiment 1 of the present application. The die attach substrate 200 may be a ceramic substrate, a printed circuit board, or the like. The die bonding substrate 200 has a die bonding region thereon, the die bonding regions are arranged according to a specific logic design sequence, the light emitting diode is located on the die bonding region of the die bonding substrate 200, and a metal connection layer 201, such as a tin connection layer, is disposed therebetween. The light-emitting device can be used in the fields of lamps, display screens and the like.
In addition, it should be understood by those skilled in the art that although many problems exist in the prior art, each embodiment or technical solution of the present invention may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Although terms such as a substrate, a growth substrate, a semiconductor epitaxial stack, a first conductivity type semiconductor layer, a light emitting layer, a second conductivity type semiconductor layer, a first contact electrode, a first pad electrode, a second contact electrode, a second pad electrode, an insulating layer, a bonding layer, and the like are more used herein, the possibility of using other terms is not excluded. These terms are used merely for convenience in describing and explaining the nature of the invention; they are to be interpreted as any additional limitation that is not inconsistent with the spirit of the present invention; the terms first, second, and the like in the description and in the claims of embodiments of the invention and in the above-described figures, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (18)
1. Flip-chip light emitting diodes comprising;
a transparent substrate, a transparent bonding layer and a semiconductor epitaxial stack;
the transparent bonding layer is positioned between the transparent substrate and the semiconductor epitaxial lamination;
the semiconductor epitaxial stack includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; the transparent bonding layer is silicon-based multi-element oxide.
2. The flip-chip light emitting diode of claim 1, wherein: the silicon-based multi-element oxide is SiO x N y Or SiO x Ti y Or SiO x Ta y 。
3. The flip-chip light emitting diode of claim 1, wherein: the oxygen content in the silicon-based multi-oxide gradually decreases or gradually increases from the direction of the semiconductor epitaxial lamination to the transparent substrate.
4. The flip-chip light emitting diode of claim 1, wherein: the silicon-based multi-oxide is formed by a chemical vapor deposition mode or an evaporation coating mode.
5. The flip-chip light emitting diode of claim 1, wherein: the refractive index of the transparent bonding layer is set as n1, and the refractive index of silicon dioxide is set as n SiO2 The refractive index of the semiconductor epitaxial lamination is n Epitaxy(s) ，n sio2 ＜n1＜n Epitaxy(s) 。
6. The flip-chip light emitting diode of claim 5, wherein: the range of n1 is 1.6-3.0.
7. The flip-chip light emitting diode of claim 1, wherein: the transparent bonding layer is of a single-layer or multi-layer structure.
8. The flip-chip light emitting diode of claim 1, wherein: the refractive index of the transparent bonding layer gradually decreases or gradually increases from the semiconductor epitaxial lamination to the transparent substrate.
9. The flip-chip light emitting diode of claim 1, wherein: the thickness of the transparent bonding layer is 0.5-5 mu m.
10. The flip-chip light emitting diode of claim 1, wherein: the semiconductor epitaxial stack has a first surface facing a transparent substrate; the first surface of the semiconductor lamination has an uneven structure.
11. The flip-chip light emitting diode of claim 10, wherein: the height of the uneven structure on the first surface of the first semiconductor lamination is 0.1-1 micrometers.
12. The flip-chip light emitting diode of claim 1, wherein: the transparent substrate is provided with a first surface facing the semiconductor lamination layer, and the first surface of the transparent substrate is provided with an uneven structure.
13. The flip-chip light emitting diode of claim 12, wherein: the height of the uneven structure on the first surface of the transparent substrate is 0.1-3 microns.
14. The flip-chip light emitting diode of claim 1, wherein: the light emitting diode further includes first and second contact electrodes electrically connected to the first and second conductive type semiconductor layers, respectively.
15. The flip-chip light emitting diode of claim 14, wherein: the light emitting diode further includes first and second pad electrodes electrically connected to the first and second contact electrodes.
16. The flip-chip light emitting diode of claim 15, wherein: the semiconductor device further includes an insulating layer having a first opening and a second opening, and the first and second pad electrodes are electrically connected to the first and second contact electrodes through the first and second openings.
17. The flip-chip light emitting diode of claim 1, wherein: the light emitting diode radiates light with the wavelength of 550-950 nm.
18. A light emitting device, characterized in that: the light emitting device comprising the flip-chip light emitting diode of any one of claims 1-17.
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| CN202311226487.0A CN117594718A (en) | 2023-09-21 | 2023-09-21 | Flip-chip light emitting diode and light emitting device |
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| CN202311226487.0A CN117594718A (en) | 2023-09-21 | 2023-09-21 | Flip-chip light emitting diode and light emitting device |
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