CN117587505A - Epitaxial pedestal - Google Patents
Epitaxial pedestal Download PDFInfo
- Publication number
- CN117587505A CN117587505A CN202311576146.6A CN202311576146A CN117587505A CN 117587505 A CN117587505 A CN 117587505A CN 202311576146 A CN202311576146 A CN 202311576146A CN 117587505 A CN117587505 A CN 117587505A
- Authority
- CN
- China
- Prior art keywords
- wafer
- epitaxially grown
- pit
- epitaxial pedestal
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 235000012431 wafers Nutrition 0.000 claims abstract description 59
- 230000000903 blocking effect Effects 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 9
- 238000000407 epitaxy Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides an epitaxial pedestal. The epitaxial pedestal includes: a base body; the wafer pit is formed on the surface of the base body and is used for placing a wafer of a film to be epitaxially grown; and the blocking blocks are arranged around the inner edges of the pits, and are used for keeping a distance between the edges of the wafers to be epitaxially grown with the films and the inner edges of the pits. At least three blocking blocks are arranged on the inner edge of the pit, and the blocking blocks can enable the edge of the wafer to be epitaxially grown with the film to keep a distance from the inner edge of the pit. In the epitaxial process, the edge of the wafer to be epitaxially grown is contacted with the blocking block, but not contacted with the inner edge of the wafer pit, so that the wafer to be epitaxially grown is not adhered to the edge of the wafer in a large range, and the wafer is not easy to damage when the wafer is taken out by a mechanical arm, thereby improving the product yield.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an epitaxial pedestal.
Background
The wafer epitaxy growth film is an important process in semiconductor manufacture, and is a method for growing a layer of monocrystalline layer on a wafer under certain conditions, specifically including vacuum epitaxy, vapor phase epitaxy, liquid phase epitaxy and the like, wherein the most widely applied method is vapor phase silicon epitaxy, and the reaction mechanism is that a silicon source with strong volatility reacts with hydrogen or is pyrolyzed at high temperature, and the generated silicon atoms are deposited on the wafer to form an epitaxial layer.
As shown in fig. 1, a schematic diagram of an epitaxial pedestal in the prior art is shown. The outer edge base includes: a base body 10 and a pit 11. A plurality of the pits 11 are formed on the surface of the susceptor body 10, and the pits 11 are used for placing a wafer 12 to be epitaxially grown with a thin film. In the epitaxial growth process, since the wafer 12 of the thin film to be epitaxially grown cannot be guaranteed to be in the central area of the pit 11 but is not in contact with the inner edge of the pit 11, when a certain point on the edge of the wafer 12 of the thin film to be epitaxially grown is in contact with the inner edge of the pit 11, the edge of the wafer 12 of the thin film to be epitaxially grown is adhered to the inner edge of the pit 11, so that the wafers are grown together. And when the epitaxial growth film process is finished, the wafer after the epitaxial growth film is taken out by using a mechanical arm is easy to cause the breakage of the wafer, so that the product yield is reduced.
Disclosure of Invention
The invention aims to solve the technical problem of providing an epitaxial pedestal, which can reduce the occurrence of regional adhesion condition of the edge of a wafer, reduce the problem of wafer breakage and improve the product yield.
In order to solve the above problems, the present invention provides an epitaxial pedestal comprising: a base body; the wafer pit is formed on the surface of the base body and is used for placing a wafer of a film to be epitaxially grown; and the blocking blocks are arranged around the inner edges of the pits, and are used for keeping a distance between the edges of the wafers to be epitaxially grown with the films and the inner edges of the pits.
In some embodiments, the number of pits is a plurality.
In some embodiments, the blocking block is one of circular arc, saw tooth, and polygonal in shape near the side wall of the wafer to be epitaxially grown.
In some embodiments, the barrier blocks have different shapes adjacent to the sidewalls of the wafer to which the thin film is to be epitaxially grown.
In some embodiments, the blocking block is inclined near the side wall of the wafer to be epitaxially grown with the thin film.
In some embodiments, the number of blocking blocks is more than three.
In some embodiments, a plurality of the blocking blocks are uniformly disposed around the inner edge of the pit.
In some embodiments, the plurality of stops are the same material as the base body.
In some embodiments, the blocking piece is a cylinder.
In some embodiments, the block and the base body are integrally formed.
According to the technical scheme, at least three blocking blocks are arranged on the inner edge of the pit, and the blocking blocks can enable the edge of the wafer to be epitaxially grown with the film to be epitaxially grown to keep a distance from the inner edge of the pit. In the epitaxial process, the edge of the wafer to be epitaxially grown is contacted with the blocking block, but not contacted with the inner edge of the wafer pit, so that the edge of the wafer to be epitaxially grown is not adhered to the inner edge of the wafer pit in a large range, and the wafer is not easy to damage when being taken out by a mechanical arm, thereby improving the product yield.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
Drawings
In order to more clearly illustrate the technical solutions of the specific manner of the present invention, the drawings that are required to be used in the embodiments of the present invention will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a schematic diagram of an epitaxial pedestal of the prior art;
fig. 2 is a schematic view of a first embodiment of an epitaxial pedestal according to the present invention;
FIGS. 3A-3B are schematic views of a second embodiment of the rim base of the present invention;
fig. 4 is a schematic view of a third embodiment of the rim base of the present invention.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the implementation manners of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Referring now to fig. 2, therein is shown a schematic view of a first embodiment of an epitaxial pedestal according to the present invention.
As shown in fig. 2, the epitaxial pedestal includes: a base body 20, a pit 21, and three blocking blocks 22. The pit 21 is formed on the surface of the base body 20, and the pit 21 is used for placing a wafer 23 to be epitaxially grown with a thin film; the blocking block 22 is circumferentially arranged at the inner edge of the pit 21, and the blocking block 22 is used for keeping a distance between the edge of the wafer 23 of the film to be epitaxially grown and the inner edge of the pit 21.
In the above technical solution, at least three blocking blocks 22 are disposed at the inner edge of the pit 21, and the blocking blocks 22 can keep a distance between the edge of the wafer 23 of the thin film to be epitaxially grown and the inner edge of the pit 21. In the epitaxy process, the edge of the wafer 23 of the film to be epitaxially grown is in contact with the blocking block 22, but not in contact with the inner edge of the pit 21, so that the edge of the wafer 22 of the film to be epitaxially grown is not adhered to the inner edge of the pit 21 in a large range, and the wafer is not easy to damage when being taken out by a mechanical arm, thereby improving the product yield.
In the present embodiment, the number of the pit 21 is six. In other embodiments, the number of the pits 21 may be one or more, and the specific number may be adjusted according to the size of the susceptor body 20 and the size of the wafer 23 to be epitaxially grown with a thin film.
In this embodiment, the number of the blocking blocks 22 is three, and the blocking blocks 22 are uniformly disposed around the inner edge of the pit 21, so as to further ensure that the edge of the wafer 22 of the thin film to be epitaxially grown is not in contact with the inner edge of the pit 21.
In this embodiment, the side walls of the blocking blocks 22 near the wafer 23 to be epitaxially grown are quadrilateral. In other embodiments, the shape of the side wall of the plurality of blocking blocks 22 near the wafer 23 of the thin film to be epitaxially grown may be one of circular arc, saw tooth, and polygonal, and specifically, the polygonal shape includes an irregular shape. Further, the shapes of the side walls of the plurality of the barrier ribs 22 adjacent to the wafer 23 to be epitaxially grown may also be different.
In this embodiment, the plurality of blocking blocks 22 and the base body 20 are integrally formed, and the material of the plurality of blocking blocks 22 is the same as that of the base body 20. In other embodiments, a plurality of the blocking blocks 22 may be disposed at the inner edge of the pit 21 after the pit 21 is formed. Further, the material of the blocking block 22 may be other materials resistant to high temperatures.
Example two
Referring to fig. 3A to 3B, fig. 3A is a top view of an epitaxial pedestal according to a second embodiment of the present invention, fig. 3B is a cross-sectional view of a pit and a stopper of the epitaxial pedestal according to the second embodiment of the present invention, and fig. 3B omits a part of the structure for convenience of viewing.
As shown in fig. 3A to 3B, the difference from the embodiment shown in fig. 2 is that in this embodiment, the sidewall of the blocking block 31, which is close to the wafer 23 of the thin film to be epitaxially grown, is an inclined surface. By setting the blocking block 31 close to the side wall of the wafer 23 to be epitaxially grown as an inclined surface, the contact area between the wafer 23 to be epitaxially grown and the blocking block 31 can be further reduced, and adhesion between the wafer 23 to be epitaxially grown and the blocking block 31 can be better prevented.
Example III
Referring now to fig. 4, a schematic view of an outer edge base according to a third embodiment of the present invention is shown.
As shown in fig. 4, the difference from the embodiment shown in fig. 2 is that in the present embodiment, the number of the blocking pieces 41 is six, specifically, six blocking pieces 41 are provided at the inner edge of the pit 21 at different intervals. Further, the blocking block 41 is a cylinder, and a side wall of the blocking block 41, which is close to the wafer 23 to be epitaxially grown with the thin film, is arc-shaped. By providing more blocking blocks 41, the wafer 23 of the film to be epitaxially grown can be contacted with more blocking blocks 41, so that the contact area between the wafer 23 of the film to be epitaxially grown and a single blocking block 41 is further reduced, and adhesion between the wafer 23 of the film to be epitaxially grown and a single blocking block 41 is better prevented.
In other embodiments, the number of stops is greater than or equal to three. Specifically, the number of the blocking blocks 41 may be four, five or more.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the statement "comprises" and "comprising" does not exclude the presence of other elements than those listed in any process, method, article, or apparatus that comprises the element. In addition, the embodiments of the present invention and the features in the embodiments may be combined with each other without collision. In addition, in the above description, descriptions of well-known components and techniques are omitted so as to not unnecessarily obscure the present invention.
The embodiments of the present invention are described in a related manner, and the same similar parts between the embodiments are all mutually referred, and each embodiment is mainly described in the differences from the other embodiments.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be comprehended within the scope of the present invention.
Claims (10)
1. An epitaxial pedestal, comprising:
a base body;
the wafer pit is formed on the surface of the base body and is used for placing a wafer of a film to be epitaxially grown;
and the blocking blocks are arranged around the inner edges of the pits, and are used for keeping a distance between the edges of the wafers to be epitaxially grown with the films and the inner edges of the pits.
2. The epitaxial pedestal of claim 1, wherein the number of pits is a plurality.
3. The epitaxial pedestal of claim 1, wherein the blocking block has one of an arcuate shape, a saw tooth shape, and a polygonal shape adjacent to a sidewall of the wafer of the thin film to be epitaxially grown.
4. The epitaxial pedestal of claim 1, wherein the barrier blocks vary in shape from side wall of the wafer proximate to the thin film to be epitaxially grown.
5. The epitaxial pedestal of claim 1, wherein the barrier block is inclined adjacent to a sidewall of the wafer on which the thin film is to be epitaxially grown.
6. The epitaxial pedestal of claim 1, wherein the number of stops is greater than or equal to three.
7. The epitaxial pedestal of claim 1, wherein a plurality of the stop blocks are uniformly distributed around the inner edge of the pit.
8. The epitaxial pedestal of claim 1, wherein the plurality of stop blocks are of the same material as the pedestal body.
9. The epitaxial pedestal of claim 1, wherein the stop is a cylinder.
10. The epitaxial pedestal of claim 1, wherein the stop and the pedestal body are integrally formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311576146.6A CN117587505A (en) | 2023-11-23 | 2023-11-23 | Epitaxial pedestal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311576146.6A CN117587505A (en) | 2023-11-23 | 2023-11-23 | Epitaxial pedestal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117587505A true CN117587505A (en) | 2024-02-23 |
Family
ID=89917802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311576146.6A Pending CN117587505A (en) | 2023-11-23 | 2023-11-23 | Epitaxial pedestal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117587505A (en) |
-
2023
- 2023-11-23 CN CN202311576146.6A patent/CN117587505A/en active Pending
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